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This article has been downloaded from IOPscience. Please scroll down to see the full text article. 1955 Proc. Phys. Soc. B 68 319 (http://iopscience.iop.org/0370-1301/68/5/108) The Table of Contents and more related content is available
Download details: IP Address: 132.234.251.212 The article was downloaded on 09/03/2010 at 00:15
310
LETTERS T O T H E EDITOR
Auger Effect in Semiconductors
It was suggested in 1950 by Fan and by Pincherle in unpublished reports that the Auger effect may be an important cause of recombination of holes and electrons in semiconductors, i.e. that the energy liberated when an electron and a hole recombine may be transferred to another free carrier. T h e importance of this effect, considered as the converse of impact ionization, is now recognized (see for example Burstein, Picus and Sclar 1955) ; its characteristic is that, when It operates alone, the lifetime of minority carriers is inversely proportional to the square of the density of the majority carriers. Such a dependence was demonstrated first by Moss (1953) in impure P b S and more recently by Haynes and Hornbeck (1955) in silicon. T h e latter results will be compared with theory. As in this case the minority carriers recombine at deep traps, the theoretical treatment is simplified. Such traps may be thought of as foreign atoms, or ions, of radius R, only slightly perturbed by the surrounding periodic potential, and an atomic treatment may be used. T h e probability per unit time that an Auger transition takes place is given by
where T - is ~ the lifetime of the minority carriers due to the Auger effect, E is the depth of the traps and p ( E ) the density of states at energy E from the edge of the band occupied by the majority carriers p ( E )will be taken as given by the standard emression 47 l/-(zm):3 2E1 p ( E ) = -___ , where c'=47;R3,3 h3
(neglecting exchange). T h e suffixes i and f refer to the initial and final states. If one assumes that for all particles kR < 1 (where k is the crystal momentum) and takes spherically symmetrical wave functions, one finds Cil 7.1 = n 2 3 Ze4EE'2 R i p 2
320
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the Editor
considered satisfactory in view of the many uncertainties in the theory. The effective mass m of the ejected particle may also differ from the free electron mass and constitutes another unkown factor. If recombination does not occur at a deep trap, but at a shallow one, or at a normal atom, the Auger lifetime is predicted to be smaller. This, according to Moss' results, would seem to occur in PbS. Thanks are extended to Dr. J. M. Radcliffe for profitable discussions, Acknowledgment is made to the Chief Scientist, %Tinistry of Supply and the Controller, H.M. Stationery Office, for permission to publish this letter. Radar Research Establishment, Malvern, Worcs. 31st January 1955.
Photoconductzczty, In the press
L. PINCHERLE.
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