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SANKEN ELECTRIC CO.,LTD.

CAUTION / WARNING
The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. Before placing an order, Sanken advises its customers to obtain the latest version of the relevant information to verify that the information being relied upon is current. Application and operation examples described in this catalog are quoted for the sole purpose of reference for the use of the products herein and Sanken can assume no responsibility for any infringement of industrial property rights, intellectual property rights or any other rights of Sanken or any third party which may result from its use. When using the products herein, the applicability and suitability of such products for the intended purpose or object shall be reviewed at the users responsibility. Although Sanken undertakes to enhance the quality and reliability of its products, the occurrence of failure and defect of semiconductor products at a certain rate is inevitable. Users of Sanken products are requested to take, at their own risk, preventative measures including safety design of the equipment or systems against any possible injury, death, fires or damages to the society due to device failure or malfunction. Sanken products listed in this catalog are designed and intended for the use as components in general purpose electronic equipment or apparatus (home appliances, office equipment, telecommunication equipment, measuring equipment, etc.). Before placing an order, the users written consent to the specifications is requested. The use of Sanken products without the written consent of Sanken in the applications where extremely high reliability is required (aerospace equipment, nuclear power control systems, life support systems, etc.) is strictly prohibited. Anti radioactive ray design is not considered for the products listed herein. This publication shall not be reproduced in whole or in part without prior written approval from Sanken. Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or smashed in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed.

Contents
Examples of Use of Typical Products by Application
.............. 2

1 ICs
1-1. Regulator ICs Application Note
................................................................................ 7 ......................................................... 8 ...................................... 16

Dropper Type Regulator ICs

Dropper Type System Regulator ICs Switching Type Regulator ICs 1-2. Power Switch ICs High-side Power Switch ICs Low-side Switch ICs 1-3. Motor Driver ICs Stepper-motor Driver ICs DC Motor Driver ICs 1-4. HID Lamp Driver ICs 1-5. Custom ICs

................................................... 22

...................................................... 24 ...................................................... 50

............................................................ 56

...................................................................... 60 ..................................................................... 64

....................................................................................... 76

2 Discretes
2-1. Transistors 2-1-1. Transistors 2-2. MOS FETs 2-2-1. MOS FETs 2-3. Thyristors 2-3-1. Reverse Conducting Thyristors 2-4. Diodes 2-4-1. Alternator Diodes
........................................................... 127 ................................ 128 .............................. 125 ......................................................................... 108 ............................................................. 117 ............................................................................ 80 ............................................................... 96

2-1-2. Transistor Arrays

2-2-2. MOS FET Arrays

2-4-2. High-voltage Diodes for Igniter 2-4-3. Power Zener Diodes 2-4-4. General-purpose Diodes

..................................................... 129 ............................................ 130

3 LEDs
3-1. Uni-Color LED Lamps 3-2. Bi-Color LED Lamps 3-3. Surface Mount LEDs 3-5. Ultraviolet LEDs
................................................................ 134 .................................................................. 137 .................................................................. 138

3-4. Infrared LEDs .................................................................................. 140


............................................................................ 141 .................................................................... 142

3-6. Multi-chip Modules

Part Number Index in Alphanumeric Order

......................................... 147

Examples of Use of Typical Products by Application


Throttle System
Motor Driver ICs (p.60 and after) DC Control IC and full bridge power stage in a single package.
Surface-mounting type series are also available.

SI-5300 / SPF7301

Driver Transistor Arrays (p.99) Motor H-bridge of NPN x 2 and PNP x 2 in a single package.

Alternators
(p.127) Diodes Solder and press fit type as well as Zener type is available.
SG-9 / SG-10 / SG-14

With integrated back emf. clamp diode.

SLA8004

driver power transistors (p.68 and after) Motor With integrated back emf. clamp diode.
2SA1568 / 2SC4065

ICs Regulator Custom-made (contact our sales reps.)

Fuel Injectors
transistors (p.84 and after) Injector Transistors and MOS FETs are available in discretes and arrays in
various packages.

2SB1622 / 2SC4153 / 2SD2382 / MN611S / STA461C / STA463C / STA508A / SDC09 / SDK09 / SPF0001 / SSD103

Headlamps
lamp driver ICs (p.64 and after) HID High-voltage controller IC and 4-circuit power stage in a
single package. Direct drive from CPU.

SLA2402M / SLA2403M / SMA2409M

for HID lamp ignition (p.125 and after) Thyristors Best suited to C-discharge SW element on high-voltage
primary side of an igniter. Integrates a reverse direction diode. High di/dt resistance

Ignition System
diodes for ignition (p.128) High-voltage Withstand voltage range: 0.5 to 15kV
SHV-01JN / SHV-05J / SHV-06JN

TFC561D / TFC562D

FET arrays for driving HID lamps (p.122) MOS 4 circuits of N-ch MOS FETs of 450V/7A in a single package.
SMA5113

stepper-motor driver ICs for AFS (p.58 and after) 2-ph Low output saturation voltage, integrated recovery diode,
surface-mount.

2SD2141 / MN638S ICs Ignition Custom-made (contact our sales reps.)


Ignition transistors (p.89 and after)

SPF7211

Room Lamp

Multi-chip LED modules (p.142)


Car Navigation and Audio Power Steering
driver MOS FETs (p.108 and after) Motor Various packages integrating low ON resistors,
bidirectional Zener diodes, etc.

Various LEDs (p.133)

2SK3710 / 2SK3711 / 2SK3724 / 2SK3800 / 2SK3801 / 2SK3803 / 2SK3851

Tail Lamps
LED Power Custom-made
(contact our sales reps.)

O2 sensor heater
driver MOS FETs (p.115) Heater Low ON resistor and integral gate protection
diode.

FKV460S

Transmission
solenoid drivers (high-side power switch ICs) (p.26 and after) AT Integral diagnostic function, surface-mount, 2- and 3-circuit types and other
diverse models.

ABS and VDC


driver MOS FETs (p.108 and after) Solenoid/motor Various packages from discretes to arrays. driver ICs (p.54) Solenoid/motor Surface-mount 4-circuit type with output voltage monitor. SPF5012 2SK3710 / FKV660S / SLA5027 / SDK08

Integral current detection resistor, current monitor output, surface-mount and


2-circuit types are also available.

SI-5151S / SPF5003 / SPF5004 / SPF5007 / SLA2502M AT linear solenoid driver (high-side power switch ICs) (p.46 and after) SPF5017 / SPF5018

1 ICs
1-1. Regulator ICs
Application Note
.............................................. ....................

1-3. Motor Driver ICs


7 8

Stepper-motor Driver ICs SLA4708M (50V, 1.5A) SPF7211 (40V, 0.8A) DC Motor Driver ICs SI-5300 (40V, 5A) SPF7301 (36V, 7A)

.........................

56 56 58 60 60 62

Dropper Type Regulator ICs

...................................

SI-3001S (5V/1A, With Output ON/OFF Control) ... 8 SI-3003S (5V/0.8A, 3-terminal) ....................... 10 SI-3101S (5V/0.4A, 5V/0.07A, 2-output, With Output ON/OFF Control) 12 SI-3102S (5V/0.1A, 5V/0.04A, 2-output, With Output ON/OFF Control) 14 Dropper Type System Regulator ICs
..

..................................... .................................... ..................................... .....................................

16

SI-3322S (5V, Surface-mount) ........................ 16 SPF3004 (5V/0.4A, 3.3V/0.2A, Surface-mount 2-output) 18 SPF3006 (5V/0.4A, 5V/0.2A, Surface-mount 2-output) 20 Switching Type Regulator ICs SI-3201S (5V/3A)
...............

1-4. HID Lamp Driver ICs


SLA2402M (500V, 15A) .................................. 64 SLA2403M (500V, 7A) .................................... 68 SMA2409M (500V, 7A) ................................... 72

22 22

............................................

1-5. Custom ICs 1-2. Power Switch ICs


High-side Power Switch ICs
...................

.....................................

76

24

SDH04 (With Diagnostic Function, Surface-mount 2-circuits) 24 SI-5151S (With Diagnostic Function) .............. 26 SI-5152S (With Diagnostic Function) .............. 28 SI-5153S (With Diagnostic Function, Built-in Zener Diode) 30 SI-5154S (With Diagnostic Function, Built-in Zener Diode) 32 SI-5155S (With Diagnostic Function) .............. 34 SLA2501M (With Diagnostic Function, 3-circuits) 36 SLA2502M (With Diagnostic Function, 4-circuits) 38 SPF5003 (With Diagnostic Function, Surface-mount 2-circuits) 40 SPF5004 (With Diagnostic Function, Surface-mount 2-circuits) 42 SPF5007 (With Diagnostic Function, Surface-mount 3-circuits) 44 SPF5017 (Surface-mount 2-circuit, current monitor output function) 46 SPF5018 (Surface-mount, current monitor output function) 48 Low-side Switch ICs
................................... ..........

50 50

SPF5002A (Surface-mount 4-circuits)

SPF5009 (With Diagnostic Function, Surface-mount 4-circuits) 52 SPF5012 (Surface-mount 4-circuits with Output Monitor) 54

Application Note for Regulator ICs


Temperature and Reliability
Reliability of an IC is generally heavily dependent on operating temperature. Heat radiation must be fully considered, and an ample margin should be given to the radiating area in designing heatsinks. When mounting ICs on heatsinks, always apply silicone grease and firmly tighten. Air convection should actively be used in actual heat dissipation. The reliability of capacitors and coils, the peripheral components, is also closely related to temperature. A high operating temperature may reduce the service life. Exceeding the allowable temperature may cause coils to be burned or capacitors to be damaged. Make sure that output smoothing coils and input/output capacitors do not exceed their allowable temperature limit in operation. We recommend, in particular, to provide an ample margin for the ratings of coils to minimize heat generation. generally used. Moreover, the heat dissipation capacity of a heatsink is heavily dependent on how it is mounted. It is therefore important and recommended to measure the heatsink and case temperature in actual operating environments.

Setting DC Input Voltage


Observe the following precautions when setting the DC input voltage: VIN (min) must be at least the set output voltage plus dropout voltage for the dropper type. It must be at least the recommended lowest input voltage for the switching type. V IN (max) must not exceed the DC input voltage of the electrical characteristics.

Screw Torque
Screw torque should be between 0.588 to 0.686 [N m] (6.0 to 7.0 [kgf cm]).

Power Dissipation (PD)


1. Dropper Type
PD = IO [VIN (mean) - VO]

2. Switching Type
V PD = VO I O ( 100 - 1) - VF IO (1 - O ) VIN Efficiency depends on input/output conditions.
Refer to the efficiency characteristics.

Recommended silicone grease


Volatile type silicone grease may produce cracks after elapse of long term, resulting in reducing heat radiation effect. Silicone grease with low consistency (hard grease) may cause cracks in the mold resin when screwing the product to a heatsink.
Type G746 Suppliers Shin-Etsu Chemical Co., Ltd. GE Toshiba Silicones Co., Ltd. Dow Corning Toray Silicone Co., Ltd.

VO : Output voltage VIN : Input voltage IO : Output current

: Efficiency VF : Diode forward voltage

Heatsink Design
The maximum junction temperature Tj (max) and the maximum case temperature Tc (max) given in the absolute maximum ratings are specific to each product type and must be strictly met. Thus, heatsink design must be performed in consideration of the condition of use which affects the maximum power dissipation PD (max) and the maximum ambient temperature Ta (max). To facilitate heatsink design, the relationship between these two parameters is presented in the Ta-PD characteristic graphs. Heatsink design must be performed in the following steps: 1. Obtain the maximum ambient temperature Ta (max) (within the set). 2. Obtain the maximum power dissipation P D (max). 3. Identify the intersection on the Ta-PD characteristic graph and obtain the size of the heatsink to be used. The size of a heatsink has been obtained. In actual applications, a 10 to 20% derating factor is

YG6260 SC102

Others
This product may not be connected in parallel. The switching type may not be used for current boosting and stepping up voltage.

Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S

a b

2.6 0.1 (2.0)

(Ta = 25C)

0.950.15 (4.6) 0.85 0.1


+0.2

Parameter DC Input Voltage Output Control Terminal Voltage Output Current Power Dissipation

Symbol VIN VC IO PD1 PD2

Ratings 35 VIN
1 1.0 *

Unit V V A W W C C C C/W

Conditions

0.45 P1.70.7 4=6.80.7

+0.2 0.1

3.9 0.7

(4.3)

8.2 0.7

18 1.5 40 to +125 40 to +100 40 to +125 5.5

With infinite heatsink Stand-alone without heatsink


1 2 3 4 5

Junction Temperature Operating Temperature Storage Temperature Junction to Case Thermal Resistance Junction to Ambient-Air Thermal Resistance

Tj TOP Tstg
j-c

1. GND 2. VC (on/off) 3. Vo 4. Vosense 5. VIN

a: Part No. b: Lot No.

(Forming No. 1101)

j-a

66.7

C/W

Stand-alone without heatsink

Equivalent Circuit Diagram


5 VIN
R1 MIC Tr1

(8.0)

5.0 0.6

Absolute Maximum Ratings

(17.9)

Features Output current of 1.0A 5-terminal type <output on/off control, variable output voltage (rise only)> Voltage accuracy of 2% Low dropout voltage 1V at IO 1.0A, 0.5V at IO 0.4A Built-in overcurrent, overvoltage and thermal protection circuits Withstands external electromagnetic noises TO220 equivalent full-mold package

External Dimensions (unit: mm)


3.2 0.2 0.5 10.00.2 4.2 0.2 2.8 0.2 4.00.2

7.90.2 16.90.3

3 VO 4 VO sense
R3

Electrical Characteristics
Ratings Parameter Input Voltage Output Voltage Dropout Voltage Line Regulation Load Regulation Output Voltage Temperature Coefficient Ripple Rejection Quiescent Circuit Current Overcurrent Protection Starting Current Vc Terminal
Output ON

( Tj= 25C, VIN =14V unless otherwise specified)


a

Symbol VIN VO VDIF

min 6 *2 4.90

typ

max 30 *1

Unit V V V V mV mV mV/C dB

Conditions
e d
2

f
R4

b c
R2

5.00

5.10 0.5 1.0

VIN =12 to 16V, IO = 0.4A IO 0.4A IO 1.0A IO =0.4A, VIN = 6 to 16V IO = 0 to 0.4A IO =5mA, Ta = 10 to +100C f =100 to 120Hz IO = 0A

Vc (on/off)

VO LINE VO LOAD VO /T RREJ Iq I S1 VC, IH VC, IL I C, IH I C, IL


3 1.2 * 4

30 100 0.5 54 3 10

1 a : Pre-regulator GND b : Output ON/OFF control c : Thermal protection d : Over-input and overcurrent protection

e : Drive circuit f : Error amplifier g : Reference voltage

Standard Circuit Diagram


D1

mA A V

2.0 *

5
OPEN

Control Voltage
Output OFF Output ON

0.8 20 0.3

V A mA VC = 2.7V VC = 0.4V

SI-3001S
2 4 1
+

DC input +

Control Current
Output OFF

VIN

C1

C2

CO

DC output

VO

Notes: *1. Since PD (max) = ( VIN VO) IO = 18( W ), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the Ta -PD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO (VIN = 14V, Io = 0.4A) drops to 5%. *4. The output control terminal Vc is pulled up inside the IC. Each input level can be directly driven with LS-TTL ICs. Thus, LS-TTL direct driving is also possible.

Co : Output capacitor (47 to 100 F, 50V) C1, C2 : Input capacitors (C1: approx. 47F, C2: approx. 0.33F). These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures. Protection diode. Required as protection against reverse D1 : biasing between input and output. (Recommended diode: Sanken EU2Z.)

Dropper Type Regulator ICs [With Output ON/OFF Control] SI-3001S

Electrical Characteristics
Io vs VDIF Characteristicsc
0.5

Line Regulation
5.1

Load Regulation
5.1 V IN = 30 ( V) 12 to 16 ( V) 5.5 ( V) 5.0

Dropout voltage VDIF (V)

0.4
Output voltage VO (V)

0.3

5.0

0.2

0.1 4.9 0 0
4.9 0

0.5
Output current IO (A)

1.0

10

15

20

25

30

Output voltage VO (V)

IO = 0 (A) 0.4 (A) 1.0 (A)

0.5
Output current IO (A)

1.0

Input voltage VIN (V)

Output Voltage Temperature Characteristics


5.1

Rise Characteristics
7 6

Quiescent Circuit Current


15

Io = 0 (A)
Output voltage VO (V) Load resistance Quiescent current lq (mA)

Output voltage VO (V)

16(V) 5.0

12(V)

VIN = 30(V)

5 4 3

10

14(V) 5.5(V)

4.9 0 --50 0 50

VIN IOUT condition 5.5 (V) / 1.0 (A) 12 (V) / 0.4 (A) 14 (V) / 0.4 (A) 16 (V) / 0.4 (A) 30 (V) / 0 (A)

12 ()

2 1 0 0 2 4 6 8 10
Input voltage VIN (V)

5 ()

100

150

0 0 2 4 6 8 10
Input voltage VIN (V)

Ambient temperature Ta (C)

ON/OFF Control Characteristics


6 5

Overcurrent Protection Characteristics


6

Thermal Protection Characteristics


6

I o = 0 (A) VIN = 14 (V)


5
Output voltage VO (V)

Io = 0 (A) VIN = 6 (V)


5

10 (V)

Output voltage VO (V)

4 3 2 1 0 0 1 2 3 4 5
Output ON/OFF control voltage VC (V)

4 3 2

30 (V)

Output voltage VO (V)

4 3 2 1 0 0 125

5.5 (V) 20 (V) 14 (V)

ON

OFF

1 0 0 0.5 1.0 1.5 2.0 2.5 3.0


Output current IO (A)

130

135

140

145

150

155

Ambient temperature Ta (C)


Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

Overvoltage Protection Characteristics


6 5

Ta PD Characteristics
20
With infinite heatsink Use G746 silicone grease (Shin-Etsu Chemical) and aluminum heatsink.

Power Dissipation PD (W)

15
2002002mm (2.3C/W)

Output voltage VO (V)

4 3 2 1

10 1001002mm (5.2C/W)
75752mm (7.6C/W)

5
Without heatsink

0 10

20

30

40

50

0 --30 20

20

40

60

80

100

Input voltage VIN (V)

Operating temperature Ta (C)

Dropper Type Regulator ICs [3-terminal] SI-3003S

Features
3-terminal IC regulator with 0.8A output current Voltage accuracy of 2% Low Dropout voltage 0.5V at IO 0.5A, 1V at IO 0.8A Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent full-mold package

External Dimensions (unit: mm)


4.2 0.2 3.2 0.2 10 0.2 2.8 0.2

16.9 0.3

7.9 0.2 40.2 0.5


a

Absolute Maximum Ratings


Parameter DC input voltage Output current Power Dissipation PD2 Junction temperature Operating temperature Storage temperature Junction to case thermal resistance Junction to ambient-air thermal resistance Tj TOP Tstg
j-c j-a

2 max

2.6 0.15

(Ta =25C)

Symbol VIN IO PD1

Ratings 35 0.8 * 22 1.8 40 to +150 40 to +100 40 to +150 5.5 66.7


2

Unit V

Conditions
0.94 0.15

(13.5)

A W W C C C C/W C/W Stand-alone without heatsink With infinite heatsink Stand-alone without heatsink

0.85 0.1

+0.2

4P1.7 0.15 = 6.8 0.15


(root dimensions)

0.45 0.1

+0.2

1 2 3 4 5

Terminal connections 1. VIN a: Part No. 2. (NC) b: Lot No. 3. GND 4. (NC) 5. VO (Forming No. 1115)

Electrical Characteristics
Parameter Input voltage Output voltage Dropout voltage Line regulation Load regulation Ripple rejection Quiescent circuit current Overcurrent protection starting current Symbol VIN VO VDIF Ratings min 6*2 4.90 5.00 typ

(Tj=25C, VIN =14V, IO =0.5A unless otherwise specified)

Equivalent Circuit Diagram

max 30 * 1 5.10 0.5 1.0

Unit V V V V mV mV dB IO 0.5A IO 0.8A

Conditions

VIN 1 OCP TSD DRIVE DET ERR REF 5

VO

VO LINE VO LOAD RREJ Iq IS1 0.9 *


3

30 100 54 3 10

VIN =8 to 16V IO =0 to 0.5A f=100 to 120Hz IO =0A

mA A

3 GND

Notes: *1. Since P D (max) = (VIN VO) IO =22 (W), VIN (max) and IO (max) may be limited depending on operating conditions. Refer to the Ta P D curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO (VIN=14V, I O=0.5A) drops to 5%.

Standard Circuit Diagram


D1 *2

1
DC input + *1

SI-3003S
3

5 4 N.C +
DC output

VIN

C1

C2

N.C

CO

VO

Co : Output capacitor (47 to 100F, 50V) *1 C1,C2 : Input capacitors (C1: approx. 47F, C2: approx. 0.33F). These are required for inductive input lines or long wiring. Tantalum capacitors are recommended for C1 and Co, especially at low temperatures. *2 D1 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)

10

Dropper Type Regulator ICs [3-terminal] SI-3003S

Electrical Characteristics
Io vs VDIF Characteristics
0.5

Line Regulation
5.1

Load Regulation
5.1

0.4
Dropout voltage VDIF (V) Output voltage VO (V) Output voltage VO (V)

0.3

5.0
IO =0A =0.2A =0.5A =0.8A IO=0.5, 0.8A =0.2A =0A

5.0
VIN =35V =25V =14V =6V

0.2

4.9

4.9

0.1

0 0 0.2 0.4 0.6 0.8


Output current IO (A)

0 0 5 10 15 20 25 30 35
Input voltage VIN (V)

0 0 0.2 0.4 0.6 0.8


Output current IO (A)

Output Voltage Temperature Characteristics


5.1

Rise Characteristics
6 5
IO =0A =0.5A =0.8A

Circuit Current
250

200
Ground current lg (mA)

Output voltage VO (V)

5.0

VIN / IO: 30V / 0A 14V / 0.5A 6V / 0.8A

Output voltage VO (V)

4 3 2 1

150
IO=0.8A =0.5A =0.2A =0A

100

50

4.9 50

50

100

150

0 0 2 4 6 8 10
Input voltage VIN (V)

0 0 5 10 15 20 25 30 35
Input voltage VIN (V)

Ambient temperature Ta (C)

Overcurrent Protection Characteristics


6 5
Output voltage VO (V)

Thermal Protection Characteristics


6
VIN =6V IO=5mA

Ta PD Characteristics
25
With infinite heatsink With silicone grease Heatsink: aluminum

5
Power Dissipation PD (W) Output voltage VO (V)

20 200 200 2mm (2.3C/W) 15 100 100 2mm (5.2C/W) 10 75 75 2mm (7.6C/W) 5
Without heatsink

4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5


Output current IO (A)

4 3 2 1 0 120

VIN =6V 14V 35V 25V

140

160

180

200

0 40

40

80

100

Ambient temperature Ta (C)


Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

Operating temperature Ta (C)

11

Dropper Type Regulator ICs [2-output] SI-3101S

Features
Single input dual output <sub output (5V/0.07A), main output (5V/0.4A)> Main output can be externally turned ON/OFF (with ignition switch, etc.) <most suitable as memory backup power supply> Low standby current ( 0.8mA) Low dropout voltage 1V Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent 5-terminal full-mold package

External Dimensions (unit: mm)


3.2 0.2 0.5 10.0 0.2 4.2 0.2 2.8 0.2 4.0 0.2

7.9 0.2 16.9 0.3

(2.0) 0.95 0.15 (4.6) 0.85 0.1


+0.2

2.6 0.1

Absolute Maximum Ratings


Parameter DC input voltage Battery reverse connection Output control terminal voltage CH1 Output current CH2 Power Dissipation PD2 Junction Temperature Operating temperature Storage temperature Junction to case thermal resistance Junction to ambient-air thermal resistance Tj TOP Tstg
j-c j-a

(Ta=25C)

VIN VINB VC IO1 IO2 PD1

40 13 * 6 VIN 0.07 * 0.4 * 1 18 1.5 40 to +125 40 to +115 40 to +125 5.5 66.7


1

V V V A A W W C C C C/W C/W Stand-alone without heatsink With infinite heatsink Stand-alone without heatsink
1 2 3 4 5

0.45 P1.7 0.7 4 = 6.80.7 3.9

+0.2 0.1

One minute

(4.3) 8.2 0.7

1. VIN 2. VC (on/off) 3. GND 4. VO1 5. VO2

a: Part No. b: Lot No.

(Forming No. 1101)

Equivalent Circuit Diagram


VIN 1
OCP TSD DRIVE DET ERR REF

(8.0)

Symbol

Ratings

Unit

Conditions

5.0 0.6

(17.9)

VO1 4

Electrical Characteristics
Ratings Parameter Input voltage CH1 Output voltage CH2 Channel-channel voltage difference (VO1 VO2) Dropout voltage CH1 CH2 Line regulation CH1 CH2 Load regulation CH1 CH2 CH1 Ripple rejection CH2 Quiescent circuit current Overcurrent protection starting current Output control voltage
Output OFF Output ON

(Tj=25C, VIN =14V unless otherwise specified)

5 VO2

Symbol VIN VO1 VO2 VO VDIF1 VDIF2 VO LINE1 VO LINE2 VO LOAD1 VO LOAD2 RREJ1 RREJ2 Iq I (S1) 1 I (S1) 2 VCH VCL I CH I CL VOVP

min 6 *2 4.80 4.80 0.1

typ

max 35 * 1

Unit V V V V V V mV mV mV mV dB dB IO =0.05A IO =0.3A

Conditions
OCP DRIVE OVP DET ERR

5.00 5.00

5.20 5.20 0.1 1.0 1.0

2 VC
CONT

3 GND

IO1 =0 to 0.05A IO2 =0 to 0.3A IO1 0.05A IO2 0.4A VIN =6 to 18V, IO =0.05A VIN =6 to 18V, IO =0.3A IO1=0 to 0.05A IO2 =0 to 0.3A f =100 to 120Hz f =100 to 120Hz IO1=0A, VC =0V

10 10 30 40 54 54

30 30 70 70

Standard Circuit Diagram


D3 D2 1 D1 2 VC SI- 3101S 3 4 VO1 GND CO1 5 VO2 VIN

0.8
3 0.1 *

mA A A

+
CIN

+
CO2

CH1 CH2
Output ON

0.5 * 3 4.2 3.2 4.5 3.5 4.8 3.8 100 100 35 * 4

V V A A V VC =4.8V VC =3.2V

CO1 : CO2 : *1 CIN :

Output control current


Output OFF

Overvoltage protection starting voltage Thermal protection starting temperature

TTSD

130 * 5

Output capacitor (47 to 100F, 50V) Output capacitor (47 to 100F, 50V) Input capacitors (approx. 47F). Tantalum capacitors are recommended for CO1, CO2 and CIN, especially at low temperatures. *2 D1, D2, D3 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.)

Notes: *1. Since P D (max) = (VIN VO) IO1 + (VIN VO2) IO2 = 18 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on operating conditions. Refer to the TaPD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.05A or IO2 = 0.3A) drops to 5%. *4. Overvoltage protection circuit is built only in CH2 (VO2 side). *5. The indicated temperatures are junction temperatures. *6. All terminals, except VIN and GND, are open.

12

Dropper Type Regulator ICs [2-output] SI-3101S

Electrical Characteristics
Line Regulation (1)
5.1
VC = 5 (V) IO2 = 0 (A)
Output voltage VO (V) Output voltage VO (V)

Line Regulation (2)


5.1
VC = 5 (V) I O1 = 0 (A)

Load Regulation (1)


5.1
VC = 5 (V) I O2 = 0 (A)
Output voltage VO (V)

I O1 = 0mA 50mA

I O2 =

0A
0.3A
5.0

V IN = 6V 14V
5.0

22V

5.0
70mA

0.5A

4.9 0 0 5 10 15 20 25

4.9 0 0 5 10 15 20 25

4.9 0 0 10 20 30 40 50 60 70

Input voltage V IN (V)

Input voltage V IN (V)

Output current IO (mA)

Load Regulation (2)


5.1
VC = 5 (V) I O1 = 0 (A)
Output voltage VO (V)

Rise Characteristics
6

Quiescent Circuit Current


10
I O1 = 0 (A) Vc = 0 (V)

5 4 3 2 1

Output voltage VO (V)

V IN = 6V,14V

Load resistor 100

5.0

22V

71.4

Quiescent current lq (mA)

4.9 0 0 0.1 0.2 0.3 0.4 0.5 0.6


0 0 2 4 6 8 10

10

15

20

Output current IO (A)

Input voltage VIN (V)

Input voltage VIN (V)

ON/OFF Control Characteristics


6 5
Output voltage VO2 (V)

Overcurrent Protection Characteristics (1)


6 5
Output voltage VO1 (V)

Overcurrent Protection Characteristics (2)


6 5
Output voltage VO2 (V)

4 3 2

V IN = 14V, 22V

4 3 2 1 0
IO2 = 0 (A) VC = 5 (V)

V IN = 6V 14V 22V

4.5V VIN = 6V 14V 22V

4 3 2 1 0

6V

4.5V

I O1 = 0 (A) VC = 5 (V)

OFF 1 0 0 1 2 3 4

ON

0.05

0.1

0.15

0.1

0.2 0.3 0.4

0.5 0.6 0.7 0.8

Output ON/OFF control voltage VC (V)

Output current IO (A)

Output current IO (A)

Thermal Protection Characteristics


6 5
Output voltage VO1 (V)

Overvoltage Protection Characteristics


6

TaPD Characteristics
20
With infinite heatsink With silicone grease G746 (Shin-Etsu Chemical) Heatsink: aluminum

VIN = 6 (V) I O1 = I O2 = 5 (mA) 5


Power Dissipation PD (W) Output voltage VO (V)

4 3 2 1 0 0 130 140 150 160


Ambient temperature Ta (C)

4 3 2 1 IO1 = I O2 = 5 (mA) VC = 5 (V)

VO1 VO2

15
200 200 2mm (2.3C/W)

10 100 100 2mm (5.2C/W)


75 75 2mm (7.6C/W)

5
Without heatsink

0 10 20 30 40

0 --30 --20 0

20

40

60

80

100 115

Input voltage VIN (V)

Operating temperature Ta (C)

Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

13

Dropper Type Regulator ICs [2-output] SI-3102S

Features
Single input dual output <sub output (5V/0.04A), main output (5V/0.1A)> Main output can be externally turned ON/OFF (with ignition switch, etc.) <most suitable as memory backup power supply> Low standby current ( 0.8mA) Low dropout voltage 1V Built-in dropping type overcurrent, overvoltage and thermal protection circuits TO220 equivalent 5-terminal full-mold miniature package

External Dimensions (unit: mm)


3.2 0.2 0.5 10.0 0.2 4.2 0.2 2.8 0.2 4.0 0.2

7.9 0.2 16.9 0.3

(2.0) 0.95 0.15 (4.6) 0.85 0.1


+0.2

2.6 0.1

Absolute Maximum Ratings


Parameter DC input voltage Battery reverse connection Output control terminal voltage CH1 Output current CH2 Power Dissipation PD2 Junction temperature Operating temperature Storage temperature Junction to case thermal resistance Junction to ambient-air thermal resistance Tj TOP Tstg
j-c j-a

(Ta=25C)

Symbol VIN VINB VC IO1 IO2 PD1

Ratings 35 13 * 6 VIN 0.04 * 1 0.1 * 1 22 1.8 40 to +150 40 to +105 40 to +150 5.5 66.7

Unit V V V A A

Conditions

0.45

+0.2 0.1

One minute

P1.7 0.7 4 = 6.8 0.7

3.9 0.7

(4.3)

8.2 0.7

W W C C C C/W C/W

With infinite heatsink Stand-alone without heatsink

1. VIN 2. VC (on/off) 3. GND 4. VO1 5. VO2

a: Part No. b: Lot No.

(Forming No. 1101)

Equivalent Circuit Diagram


Stand-alone without heatsink

(8.0)

5.0 0.6

(17.9)

VIN 1
OCP

VO1 4
DET ERR REF

Electrical Characteristics
Parameter Input voltage CH1 Output voltage CH2 Channel-channel voltage difference (VO1 VO2) Dropout voltage CH1 CH2 CH1 Line regulation CH2 CH1 Load regulation CH2 CH1 Ripple rejection CH2 Quiescent circuit current Overcurrent protection starting current Output control voltage
Output OFF Output ON

(Tj = 25C, VIN = 14V unless otherwise specified)

TSD

Symbol VIN VO1 VO2 VO VDIF1 VDIF2 VO LINE1 VO LINE2 VO LOAD1 VO LOAD2 RREJ1 RREJ2 Iq I (S1) 1 I (S1) 2 VCH VCL I CH I CL VOVP

Ratings min 6 *2 4.80 4.80 0.1 5.00 5.00 typ max 30 * 1 5.20 5.20 0.1 1.0 1.0 10 10 30 40 54 54 0.8 0.06 * 0.15 * 4.2 3.2
3 3

Unit V V V V V V mV mV mV mV dB dB mA A A IO = 0.04A IO = 0.1A

Conditions

DRIVE

5 VO2

OCP DRIVE OVP DET ERR

IO1 =0 to 0.04A IO2 =0 to 0.1A IO1 0.04A IO2 0.1A VIN = 6 to 30V, IO = 0.04A VIN = 6 to 30V, IO = 0.1A IO1 = 0 to 0.04A IO2 = 0 to 0.1A f = 100 to 120Hz f = 100 to 120Hz IO1 = 0A, VC = 0V

2 VC
CONT

3 GND

50 50 70 70

Standard Circuit Diagram


D3 D2 1 D1 SI- 3102S 2 VC 3 4 VO1 GND CO1 5 VO2

CH1 CH2
Output ON

VIN

4.5 3.5

4.8 3.8 100

V V A A VC = 4.8V VC = 3.2V
+
CIN

Output control current


Output OFF

+
CO2

100 30 * 151 *
4

Overvoltage protection starting voltage Thermal protection starting temperature

V Output capacitor (47 to 100F, 50V) Output capacitor (47 to 100F, 50V) Input capacitors (approx. 47F). Tantalum capacitors are recommended, for CO1, CO2 and CIN, especially at low temperatures. *2 D1, D2, D3 : Protection diode. Required as protection against reverse biasing between input and output. (Recommended diode: Sanken EU2Z.) CO1 : CO2 : *1 CIN :

TTSD

Notes: *1. Since P D (max) = (VIN VO) IO1 + (VIN VO2) IO2 = 22 (W), VIN (max), IO1 (max) and IO2 (max) may be limited depending on operating conditions. Refer to the TaPD curve to compute the corresponding values. *2. Refer to the dropout voltage. *3. IS1 rating shall be the point at which the output voltage VO1 or VO2 (VIN = 14V, IO1 = 0.04A or IO2 = 0.1A) drops to 5%. *4. Overvoltage protection circuit is built only in CH2 (VO2 side). *5. The indicated temperatures are junction temperatures. *6. All terminals, except VIN and GND, are open.

14

Dropper Type Regulator ICs [2-output] SI-3102S

Electrical Characteristics
Line Regulation (1)
5.10
VIN = VC IO2 = 5mA

Line Regulation (2)


5.10
VIN = VC IO1 = 5mA

Load Regulation (1)


5.10
VIN = VC

5.05
Output voltage VO (V) Output voltage VO (V)

5.05
Output voltage VO (V)

5.05
IO2 = 0A 50mA 100mA VIN = 6V 14V 30V

5.00

IO1 = 0A 20mA 40mA

5.00

5.00

4.95

4.95

4.95

4.90

4.90

4.90

4.85 0 5 10 15 20 25 30 35
Input voltage V IN (V)

4.85 0 5 10 15 20 25 30 35
Input voltage VIN (V)

4.85 0 10 20 30 40 50
Output current IO (mA)

Load Regulation (2)


5.10
VIN = VC

Rise Characteristics
6 5
VIN = 6V,14V

Quiescent Circuit Current


12
VC = 0V IO1 = 0A

4 3 2 1 0
IO1 = 0A 20mA 40mA

Quiescent current lq (mA)

5.05
Output voltage VO (V) Output voltage VO (V)

10 8 6 4 2 0 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 35
Input voltage VIN (V) Input voltage VIN (V)

5.00

4.95
30V

4.90

4.85 0 20 40 60 80 100
Output current IO (mA)

ON/OFF Control Characteristics


6
VIN = 14V IO2 = 5mA

Overcurrent Protection Characteristics (1)


6
VIN = VC IO2 = 5mA

Overcurrent Protection Characteristics (2)


6
VIN = VC IO1 = 5mA

5
Output voltage VO2 (V) Output voltage VO1 (V)

5 4 3 2 1 0 0 1 2 3 4 5 6 0 20 40 60 80 100 120
Output ON/OFF control voltage VC (V) Output current IO (mA) Output voltage VO2 (V)

5 4 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5


Output current IO2 (A)

4
OFF

3 2 1 0

ON

VIN = 6V 14V 30V

VIN = 6V 14V 30V

Thermal Protection Characteristics


6
VIN = 6V IO1 = IO2 = 5mA

Overvoltage Protection Characteristics


6
VIN = VC IO2 = 5mA

TaPD Characteristics
25
With infinite heatsink With silicone grease G746 (Shin-Etsu Chemical) Heatsink: aluminum

5
Output voltage VO1 (V)

5
Power Dissipation PD (W) Output voltage VO (V) VO1

20
200 200 2mm (2.3C/W)

4 3 2 1 0 100

4 3
VO2

15
100 100 2mm (5.2C/W)

10
75 75 2mm (7.6C/W)

2 1 0 26

5
Without heatsink

120

140

180

200

220

240

28

30

32

34

36

38

0 40 20 0

20 40 60 80 100 120 140 160

Ambient temperature Ta (C) Note on Thermal Protection Characteristics: The thermal protection circuit is intended for protection against heat during instantaneous short-circuiting. Its operation, including reliability, is not guaranteed for short-circuiting over an extended period of time.

Input voltage VIN (V)

Operating temperature Ta (C)

15

Dropper Type System Regulator ICs SI-3322S

Features
High accuracy output of 5V30mV Memory backup power supply 4V0.2V Power on reset function Supply voltage monitor function Watch dog timer CR not required for setting external time constant

External Dimensions (unit: mm)


Index area

SI-3322S Lot SKA


Lot

7.40 10.00 7.60 10.65

3 0.25 45 0.75

Adhesive surface
10.10 10.50 2.35 2.65

0.23 0.32

Absolute Maximum Ratings


Parameter Symbol
VIN (1) Terminal voltage VIN (2) VSC, NMI, RESET, OUTE W/D, STBY Storage temperature Operating temperature Power dissipation Tstg Top PD 40 to +125 40 to +105 1.4 C C W Ta = 25C
IG. SW 47F + R2

0.33 0.51

0.10 0.30

0 to 8

0.40 1.27

Applicable terminals
BAI, VCC, VNMIC VS, NMIC, RSTTC, OUTE

Ratings
0.3 to 32

Unit
V

Conditions

1.27 BSC

Coplanarity (height difference among leads) 0.1mm max.

0.3 to 7

Standard Connection Diagram


+ R1 47F A/D converter, I/O circuit, etc.

120 6 5 4 VB 3 VS 2 VSC NMI STBY RESET 9

+ 68F VCC NMI STBY RESET AVCC

Electrical Characteristics
Ratings Parameter
VSC output voltage VS output voltage VS VSC voltage difference BAI input current VCC input current VB input current VS input current NMIC input current W/D input current RSTTC input current Lo NMI judge voltage Hysteresis Hi NMI output voltage Lo Hi STBY output voltage Lo Hi RESET output voltage Lo Hi OUTE output voltage Lo Hi OUTE output voltage Lo Standby release time Reset release time Reset cycle Reset period W/D signal stop detect period Reset signal output time Standby signal output time W/D fail judge frequency Out enable release time VTOL TST TRE TRC TRP TWS TNR TRS FFH TWE 5 60 40 20 10 80 10 2 40 50 5 10 10 75 50 25 12.5 0.6 20 90 60 30 15 V ms ms ms ms ms s s kHz ms VUOL VTOH VS0.5 0.6 V V VROL VUOH VS0.5 0.6 V V VSOL VROH VS0.5 0.6 V V VNOL VSOH VS0.5 0.6 V V

VNMIC VCC 1 BAI +

(Ta = 25C unless otherwise specified)

BATT

47F 8 GND

SI-3322S

15 12

Microcomputer

Symbol
VSC VS VS I BAI I CC IB IS I NMIC I W/D I RTC VNIL VN VNOH

min 3.8 4.97

typ 4 5

max 4.2 5.03 0.3 0.6 5 25 20

Unit
V V V mA mA mA mA mA mA mA V V V

Conditions
BAI = 4.2 to 16V, ISC = 0.2mA VCC = 5.2 to 16V, IO = 350mA VCC = 5.2V, ISC = 50mA BAI = 4.9 to 16V, ISC = 0.2mA VCC = 3 to 16V VCC = 3 to 16V VCC = BAI = 3 to 16V, ISC = 0mA VCC = BAI = 14V VCC = BAI = 14V VCC = BAI = 14V NMIC = 0V
VNMIC 6

NMIC OUTE OUTE W/D RSTTC W/D NMI Control GND 13 11 10 16 14 OPEN or GND Logic circuit

R1, R2: NMI judge voltage (5V typ) variable resistor NMI judge voltage (R1 + R2) 2.5V/R2 R1, R2 2k Normally, VNMIC terminal is open.

RSTTC: Normally open. GND connected when TRE is to be halved.

0.04 0.04 0.04 4.9 0.12 VS0.5

0.1 0.1 0.1 5

0.4 0.4 0.4 5.1 0.3

Circuit Block Diagram


+ VCC 5 VB 4 Start circuit + Current limit circuit VS 3 + + VSC 2

Isource = 1mA Isink = 0.5mA Isource = 1mA Isink = 0.5mA Isource = 1mA Isink = 0.5mA Isource = 1mA Isink = 0.5mA Isource = 1mA Isink = 0.5mA
13 NMIC 11 OUTE GND 8 BAI 1

Main regulator

9 NMI + Backup regulator NMI judge circuit + Reference oscillation circuit STBY control circuit

Counter

15 STBY

OUTE control circuit

Frequency comparator

RESET control circuit

12 RESET

10 OUTE

16 W/D

14 RSTTC

Timing Chart
VCC VS VSC NMI STBY RESET OUTE OUTE W/D Power on HI or Lo W/D input stop W/D input start (microcomputer (microcomputer resets) runaway) Power off TWS TRC TWE TST TRE TRS TRP TNR 0V VNIL+VN VNIL (BAI=14V) 0V

Notes: The direction of current flowing into the IC is positive (+).

16

Dropper Type System Regulator ICs SI-3322S

Electrical Characteristics
VS Line Regulation
5.03 5.02 5.01 IO = 0A

VS Load Regulation
5.03 5.02 5.01

VS Rise Characteristics
6 5 IO = 0A 4

VS (V)

VS (V)

5 4.99 4.98 4.97 0.4A

5 4.99 4.98 4.97 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 12V VCC = 5.2V

VS (V)

3 0.4A 2 1 0 0

10

15

20

25

10

VCC (V)

IO (A)

VCC (V)

VS Overcurrent Protection Characteristics


6 5 4

VCC Input Current


5

VB Input Current
20

No load
4 15

ICC (mA)

3 VCC = 7V 2 12V 1 0

I B (mA)
0 5 10 15 20

VS (V)

10

0.5

1.5

10

15

20

IO (A)

VCC (V)

VCC (V)

VS Input Current
20

VSC Rise Characteristics


5

VSC Overcurrent Protection Characteristics


6 5 4

No load
4 15

IS (mA)

VSC (V)

10

VSC (V)

3 2

5 1 1 0

10

15

20

10

15

20

10

VCC (V)

BAI (V)

ISC (A)

BAI Input Current


500

VS-VSC Voltage Difference


500

NMI Judge Voltage Characteristics


6 5 4

No load
400 400

VS (mV)

IBAI (A)

NMI (V)

300

300

3 2

200

200

100

100

1 0 4.5

0 0 5 10 15 20

20

40

60

80

100

120

4.7

4.9

5.1

5.3

5.5

BAI (V)

ISC (mA)

VCC (V)

17

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004

Features
Single input dual output (ch1: 5V/0.4A, ch2: 3.3V/0.2A) Power on reset function Watchdog timer Built-in drooping type overcurrent and thermal protection circuits (ch1)

External Dimensions (unit: mm)


12.20.2 10.50.2 16 9 1.0 0.05
Fin thickness
+0.1

Parameter
DC input voltage Output control terminal voltage Output current CH1 CH2

Symbol
VIN EN Io1 Io2 MODE W/D/C TC CK Vo1-fail RESET Tj Tstg j-c j-a

Ratings
13 to 35 40 0.3 to 35 40 0.4 0.2

Unit
V V A 400mS 400mS

Remarks
Reverse connection 1 min max.

1 1.270.25 0.4 0.05


+0.15

8 2.50.2

0.25 0.05

+0.15

MODE terminal input voltage W/D/C terminal input voltage TC terminal input voltage CK terminal input voltage Vo1-fail terminal output voltage Reset terminal output voltage Junction temperature Storage temperature Thermal resistance (junction to case) Thermal resistance (junction to ambient air)

0.3 to 7

Standard Connection Diagram


40 to 150 40 to 150 4.1 38 C C C/W C/W With infinite heatsink With glass epoxy + copper foil board (size 5.0 x 7.4cm; t: glass epoxy = 1.6mm/copper foil = 18m)
Battery Vin EN D1 Vo1

SPF3004
Cin

Vo1 Vo1 fail

MODE Vo2

+
RESET W/D/C CK TC

Co1

Load
GND

Electrical Characteristics
Parameter
Input voltage CH1 Output voltage CH1 CH2 Dropout voltage CH1 CH1 CH2 CH1 CH2

Symbol
VIN Vo1 Vo1 Vo2 VDIF11 VDIF12 VDIF2 RREJ1 RREJ2 Iq IGND Is11 Is21 Is21 Is22 VENth

min Vo1+VDIF1 * 3 4.90 4.85 3.15

Ratings typ
5.00 5.00 3.30

D2

max 35 * 4 5.10 5.15 3.45 0.5 0.25 0.5

Unit
V

Conditions
VIN = Vo1+VDIF1 to 18V, Io1 = 0 to 0.4A, Tj = 40 to 125C VIN = Vo1+VDIF1 to 18V, Io1 = 0 to 0.4A, Tj = 40 to 150C VIN = Vo2+VDIF1+VDIF2 to 18V, Io1 = 0 to 0.2A

Rtc

+
Co2

Load

+
Ctc

Io1 = 0.4A Io1 = 0.2A, Tj = 25C Io2 = 0.2A f = 100 to 200Hz VIN = 16V, EN = 0V VIN = 35V, EN = 0V Io1 = Io2 = 0.2A Vo1 = 4.5V Vo2 = 2.8V Vo1 = 0V Vo2 = 0V Tj = 40 to 125C

Ripple rejection

Quiescent circuit current GND current

54 54 10 50 5 70 0.402 0.201 0.402 0.201 1.0 0.9

db 50 250 10 100 1.80 0.80 1.80 0.80 3.5 3.5 50 30 1.0 0.5 A mA mA A A V A V V V V V V V V V V S S S V

Cin: Capacitor (39 F) for oscillation prevention CO1: Output capacitor (39 F) CO2: Output capacitor (39 F) Tantalum capacitors are recommended especially for low temperatures. D1, D2: Protection diodes. Required as protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z).

Overcurrent protection CH1 starting current CH2 CH1 Residual current at a short CH2
EN output control voltage

Timing Chart
Vin EN
Vo1thH Vo1thL EN (ON) operation EN (OFF) operation

*8
EN = 6.4V, Tj = 40 to 125C EN = 3.51V, Tj = 40 to 125C EN = 0V, Tj = 40 to 125C Isink = 250A, (Pull-up resistance 20k typ) Isource = 15A Isink = 250A, (Pull-up resistance 20k typ) Isource = 15A Vrs, Vfail 4.5V Vrs, Vfail 0.8V Vrs 3.0V Vrs 0.8V Vo1th = Vo1thH-Vo1thL Vo2th = Vo2thH-Vo2thL Min. set time: 6mS Min. set time: 4mS Min. set time: 400S

EN output control current

ON

OFF Vo1-fail terminal LOW voltage Vo1-fail terminal HI voltage Reset terminal LOW voltage Reset terminal HI voltage CH1 Reset detect voltage CH2

18

CH1 CH2 Power on reset delay time W/D time W/D pulse time MODE terminal control voltage MODE = 5V ON MODE terminal A control current MODE = 0V, Tj = 40 to 125C OFF V W/D/C terminal control voltage *7 W/D/C = 5V ON W/D/C terminal A control current W/D/C = 0V, Tj = 40 to 125C OFF V Min. clock pulse time = 5 S (Duty 50%) CK terminal control voltage CK = 5V ON CK terminal control A current CK = 0V, Tj = 40 to 125C OFF Notes: *3: Refer to dropout voltage. *4: Since PD (max) = {(VINVO1) (IO1+ IO2)} + (VIN Iq) + {(VO1VO2) IO2 } = 30W, VIN (max), IO1(max) and I O2(max) may be limited depending on operating conditions. *5: The Vo1-fail and RESET terminals are pulled up in the IC; may be directly connected to logic circuits. *6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 155 C (min.) and 165C (typ). These values represent the design warranty. *7: The threshold voltage at the W/D/C terminals is determined by the presence/absence of WD operation (occurrence of RESET signal pulses). The W/D/C function is assumed to be OFF during the period when RESET pulses occur. *8: The TOFF-EN operation (VEN: 5V 0V) for Tj=150C is 16mS (0.32V/mS) max.

Reset detect voltage hysteresis width

IENH1 IENH2 1.0 IENL Vfail L Vfail H Vo10.8V * 5 0.5 VRSL VRSH Vo10.8V * 5 Vo1thH Vo1 0.97 Vo1thL 4.05 Vo2thH Vo2 0.985 Vo2thL 3.00 Vo1th 0.255 Vo2th 0.105 tdly 0.70 Rtc Ctc 0.72 Rtc Ctc 0.74 Rtc Ctc 0.52 Rtc Ctc 0.54 Rtc Ctc 0.56 Rtc Ctc twd 0.04 Rtc Ctc 0.06 Rtc Ctc 0.08 Rtc Ctc twdp Vmodeth 1.0 3.0 ImodeH 200 ImodeL 1.0 1.0 Vw/d/cth 3.0 1.0 Iw/d/cH 200 Iw/d/cL 1.0 1.0 Vckth 3.0 1.0 IckH 200 IckL 1.0 1.0

OCP operation Reset operation

Vo1 Vo1 fail


(Vo1 pull-up)

OCP operation Reset operation

Vo2 MODE

Vo2thH

Vo2thL

(Vo1 system connection)


Open status

Vmodeth Vo1 pull-up status

TC
(3.3 pull-up)
tdly twd twdp Open status

RESET W/D/C CK

tdly tdly-twdp

(Vo1 system connection)

W/D Stop period

2.0 0.8

+0.2

Absolute Maximum Ratings

(Ta=25C)

7.50.2

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3004

Electrical Characteristics
Rise Characteristics of Output Voltage
6 5.10
Output voltage VO1, VO2 (V) Output voltage VO1 (V) Output voltage VO2 (V)

Line Regulation (V01)

Line Regulation (V02)

3.50

IO1=0A 0.4A

5.00

3.40

IO2=0A 0.2A

IO1=0A 0.2A 0.4A


4.90

IO2 =0A 0.1A 0.2A


3.30

10

10

20

30

40

10

20

30

40

Input voltage V IN (V)

Input voltage VIN (V)

Input voltage VIN (V)

Load Regulation (V01)

Load Regulation (V02)

Dropout Voltage (V01)


1.0

5.10
Output voltage VO1 (V) Output voltage VO2 (V)

3.50
Vdif1 (V) Dropout voltage

5.00

3.40

0.5

VIN =6V 10V 14V 18V


4.90 0

VIN =6V 10V 14V 18V


3.30 0

0.1

0.2

0.3

0.4

0.05

0.10

0.15

0.20

0.2

0.4

0.6

Output current IO1 (A)

Output current IO2 (A)

Output current IO1 (A)

GND Current

Overcurrent Protection Characteristics (V01)


6

Overcurrent Protection Characteristics (V02)

40
GND current IGND (mA) Output voltage VO1 (V)

4 4
Output voltage VO2 (V)

IO1=0.4A

20

VIN =6V 10V 14V 18V


2

VIN =6V 10V 14V 18V


2

IO1=0.2A IO1=0A

10

20

30

40

0.5
Output current IO1 (A)

1.0

0.2

0.4

0.6

Input voltage VIN (V)

Output current IO2 (A)

Thermal Protection Characteristics


6

EN Terminal Output Voltage


6

TaPD Characteristics

IO1=5mA
Power dissipation PD (W) Output voltage VO1 (V) Output voltage VO1 (V)

40 4 Infinite heatsink equivalent (Tc=25C)

30

20

10

Copper foil area (5.07.4mm, t=1m) 0 25 50 85 125 150

0 100 120 140 160 180 200


Ambient temperature Ta (C)

0 -40

EN terminal voltage VEN (V)

Operating temperature Ta (C)

19

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3006

Features
Dual input and dual output (ch1: 5V/0.4A, ch2: 5V/0.2A) Power on reset function Watchdog timer Built-in drooping type overcurrent and thermal protection circuits (ch1)

External Dimensions (unit: mm)


12.20.2 10.50.2 16 9 1.0 0.05
Fin thickness
+0.1

Parameter
DC input voltage Vo1, Vo2 output control terminal voltage Vo2 output control terminal voltage CH1 Output current TC terminal input voltage CK terminal input voltage W/D/C terminal input voltage Reset terminal output voltage Power dissipation Junction temperature Operating temperature Storage temperature Thermal resistance (junction to case) Thermal resistance (junction to ambient air) CH2

Symbol
VIN1 VIN2 EN VC Io1 Io2 TC CK W/D/C RESET P D1 P D2 Tj Top Tstg j-c j-a

Ratings
13 to 35 0.3 to 35 0.3 to 35 0.4 0.2

Unit
V V V A

Remarks

1
Reverse connection 1 min max.

8 2.50.2 0.4 0.05


+0.15 +0.15

1.270.25

0.250.05

0.3 to 7

Standard Connection Diagram


18.6 2.97 40 to 150 40 to 105 40 to 150 6.7 42 W C C C C/W C/W With an infinite heatsink mounted.
Battery Cin

With an infinite heatsink mounted.

*1

D1 Vin1 EN Vin2 Vc Vo1


3Pin 2Pin 6Pin 4Pin 14Pin

RESET Vo2

SFP3006 7Pin
8Pin 10Pin 11Pin

Rtc Co1 Ctc Load

5Pin 1,9, 12,13Pin

GND

CK
D2

Tc W/D/C

*1
* The regulator IC may be used only with Vo1 (single output power supply) by selecting NC (open) for 5Pin:Vc, 6Pin:Vin2 and 7Pin: Vo2.

Notes: *1: With glass epoxy + copper foil board (size 5.0 7.4cm; t: glass epoxy = 1.6mm / copper foil = 18m)

Load

Co2

Electrical Characteristics
Parameter
Input voltage Output voltage Dropout voltage Ripple rejection CH1 CH2 CH1 CH2 CH1 CH2 Quiescent circuit current GND current Overcurrent protection starting current Residual current at a short CH1 CH2 CH1 CH2 ON OFF

Symbol
VIN1, 2 Vo1 Vo2 VDIF1 VDIF2 RREJ1 RREJ2 Iq IGND Is11 Is21 Is21 Is22 VENth IENH IENL VRSL VRSH Vo1thH Vo1thL

min Vo1+VDIF1 4.85 4.85

Ratings typ

max 35

Unit
V V V db

Conditions

* 2, 3
VIN1 = 6 to 18V, Io = 0 to 0.3A VIN2 = 6 to 18V, Io = 0 to 0.3A

5.00 5.00

5.15 5.15 0.5 0.5

Cin: Capacitor (39 F) for oscillation prevention CO1: Output capacitor (39 F) CO2: Output capacitor (39 F) Tantalum capacitors are recommended particularly for low temperatures (tantalum capacitors of about 0.47 F in parallel). D1, D2: Protection diodes. Required for protection against reverse biasing between input and output (Recommended diode: SANKEN EU2Z).

54 54 10 50 5 70 0.402 0.201 0.402 0.201 0.9 1.0 50 250 10 100 1.8 0.8 1.8 0.8 3.5 50 1.0 0.5 Vo1-0.8V Vo1 0.97 4.05 1.18 Rtc Ctc 1.26 Rtc Ctc 1.35 Rtc Ctc 0.93 Rtc Ctc 1.03 Rtc Ctc 1.13 Rtc Ctc 0.07 Rtc Ctc 0.13 Rtc Ctc 0.19 Rtc Ctc 1.0 1.0 1.0 1.0 1.0 1.0 3.0 200 1.0 3.5 300 1.0 3.0 200 1.0

f = 100 to 120Hz VIN1 = 16V, VEN = 0V VIN1 = 35V, VEN = 0V Io1 = Io2 = 0.2A Vo1 = 4.5V Vo2 = 4.5V Vo1 = 0V Vo2 = 0V
Vin1
(3 Pin)

A mA mA A A V A V V V V S S S V A V A V A

Circuit Block Diagram


Vo1
(4 Pin)

EN
(2 Pin)

EN TSD

Drive1 OCP1

Err.

D E T

Vo1 RESET W/D

RESET
(14 Pin)

EN output control voltage EN output control current

Vin2
(6 Pin)

Vo2
(7 Pin)

EN = 5V EN = 0V Isink = 250A (Pull-up resistance 20k typ) Isource = 15A Vrs Vrs 4.5V 0.8V

Vc
(5 Pin)

Vc (Vo2: EN)

Drive2 OCP2

Err.

D E T

W/D/C
(11 Pin)

Reset terminal LOW voltage Reset terminal HI voltage Reset detect voltage CH

GND
(1,9,12,13 Pin)

*4

TC
(8 Pin)

CK
(10 Pin)

Power on reset delay time W/D time W/D pulse time CK terminal control voltage CK terminal control current ON OFF

t dly t wd t wdp Vckth IckH IckL Vcth IcH IcL Vw/d/cth Iw/d/cH Iw/d/cL

Min. set time: 6mS Min. set time: 4mS Min. set time: 400S Min. clock pulse time: 5s (Duty 50%) VCK = 5V VCK = 0V Vc = 5V Vc = 0V VW/D/C = 5V VW/D/C = 0V
Vin1, Vin2 (+B) EN Vo1
(BACK UP power supply) ENthH Vo1thH ENthL Vo1thL

Timing Chart

Vc output control voltage Vc output control current W/D/C terminal control voltage W/D/C terminal control current ON OFF

Vo Vo2
(Main power supply)

TC RESET CK W/D/C
tdly twd twdp W/D OFF mode

Notes: *2: Refer to Dropout Voltage. *3: Since PD (max) = (VINVO1) IO1+ (VIN2VO2) IO2 + (VIN Iq) = 22W, VIN (max), IO1(max) and I O2(max) may be limited depending on operating conditions. *4: The RESET terminal is pulled up in the IC; may be directly connected to logic circuits. *6: The thermal protection function is built in VO1 (CH1 side) only. The design thermal protection starting temperature is 151 C (min.) and 165C (typ). These values represent the design warranty.

20

2.0 0.8

+0.2

Absolute Maximum Ratings

(Ta=25C)

7.50.2

Dropper Type System Regulator ICs [Surface-mount 2-output] SPF3006

Electrical Characteristics
Rise Characteristics of Output Voltage (V01)
6

Rise Characteristics of Output Voltage (V02)


6

Line Regulation (V01)


5.10

Output voltage VO1 (V)

Output voltage VO2 (V)

IO1=0A 0.2A 0.4A


2

IO2 =0A 0.2A 0.4A


2

Output voltage VO1 (V)

5.05

5.00

4.95

IO1=0A 0.2A 0.4A

0 0 2 4 6 8 10 0 2 4 6 8 10
Input voltage V IN (V) Input voltage VIN (V)

4.90 0 5 10 15 20 25 30
Input voltage VIN (V)

Line Regulation (V02)


5.10

Load Regulation (V01)


5.10

Load Regulation (V02)


5.10

Output voltage VO2 (V)

Output voltage VO1 (V)

5.00

5.00

Output voltage VO2 (V)

5.05

5.05

5.05

5.00

IO1=0A 0.1A 0.2A


4.95

4.95

VIN =6V 10V 14V 18V

4.95

VIN =6V 10V 14V 18V

4.90 0 5 10 15 20 25 30
Input voltage VIN (V)

4.90

0.1

0.2

0.3

0.4

4.90

0.05

0.10

0.15

0.20

Output current IO1 (A)

Output current IO2 (A)

Dropout Voltage (V01)


0.6

Dropout Voltage (V02)


0.6

Overcurrent Protection Characteristics (V01)


6

Vdif1 (V)

Vdif2 (V)

0.4

0.4

Output voltage VO1 (V)

Dropout voltage

Dropout voltage

0.2

0.2

Ta=150C 25C 40C

VIN =6V 10V 14V 18V


2

Ta=150C 25C 40C


0 0 0.2
Output current IO1 (A)

0.4

0.1
Output current IO2 (A)

0.2

0.2

0.4

0.6

0.8

Output current IO1 (A)

Overcurrent Protection Characteristics (V02)


6

Thermal Protection Characteristics


6

TaPD Characteristics
20 Infinite heatsink equivalent (Tc=25C)

IO1=5mA
16 4 4
Power dissipation PD (W) Output voltage VO2 (V) Output voltage VO1 (V)

VIN =6V 10V 14V 18V


2

12

8 Copper foil area (5.07.4mm, t=18m)

0 0 0.2 0.4 0.6


Output current IO2 (A)

0 100

125

150

175

200

0 -50

50

100

150

Ambient temperature Ta (C)

Operating temperature Ta (C)

21

Switching Type Regulator ICs SI-3201S

Features
Output current of 3A (Ta = 25C, VIN = 8 to 18V) High efficiency of 82% (VIN = 14V, I O = 2A) Requires 5 external components only Built-in reference oscillator (60kHz) Phase internally corrected Output voltage internally corrected Built-in overcurrent and thermal protection circuits Built-in soft start circuit

External Dimensions (unit: mm)


3.2 0.2 0.5 10.0 0.2 4.2 0.2 2.8 0.2 4.0 0.2

7.9 0.2 16.9 0.3

(2.0) 0.95 0.15 (4.6) 0.85 0.1


+0.2

2.6 0.1

Absolute Maximum Ratings


Parameter Input voltage Output voltage SWOUT terminal voltage Power Dissipation PD2 Junction temperature Storage temperature Junction to case thermal resistance Junction to ambient-air thermal resistance Tj Tstg
j-c j-a

(Ta=25C)

Symbol VIN IO VSWOUT PD1

Ratings 35 3 1 22 1.8 40 to +150 40 to +125 5.5 66.7

Unit V A V W W C C C/W C/W

Conditions
P1.7 0.7 4 = 6.8 0.7

0.45

+0.2 0.1

3.9 0.7

(4.3)

8.2 0.7

With infinite heatsink


1 2 3 4 5

Stand-alone

1. VIN 2. SWOUT 3. GND 4. VS 5. SS

a: Part No. b: Lot No.

(Forming No. 1101)

Standard Circuit Diagram


VIN 1 VIN
c

SI-3201S
a d f b e

Recommended Operating Conditions


Parameter Input voltage Output current Operating temperature Symbol min VIN IO Top 8 0.5 40 Ratings typ max 18 3 +85 Unit V A C TaPD characteristics Conditions

SW Tr SWOUT

(8.0)

5.0 0.6

L1 VO

C1

+ 5 SS
h

D1
g

(17.9)

C2

VS
i

C3 GND

GND 3

GND

Electrical Characteristics
Parameter Output voltage Line regulation Load regulation Efficiency *1 Oscillation frequency Quiescent circuit current Overcurrent protection starting current Soft *3 start terminal Low level voltage Source current when low Discharge resistance f OSC Iq IS VSSL I SSL RDIS 15 25 200 3.1 50 Symbol min VO VO LINE VO LOAD 82 60 5 4.80 Ratings typ 5.00

(VIN = 14V, I OUT = 2A, Tj = 25C unless otherwise specified)

C1: 1000F C2: 1000F a: Internal power supply b: Thermal protection c: Reference oscillator d: Reset e: Latch & driver

L 1: 250H D1: RK46 (Sanken) f : Comparator g: Overcurrent protection h: Error amplifier i : Reference voltage

max 5.20 100 50

Unit V mV mV %

Conditions

VIN = 8 to 18V IO = 0.5 to 3A

70 10

kHz mA A IO = 0A

*2

0.2 35

V A k VSSL = 0.2V VIN = 0V

Notes: *1. Efficiency is calculated by the following equation: VO I O = 100 (%) VIN I IN *2. A dropping-type overcurrent protection circuit is built in the IC. *3. An external voltage may not be applied to the soft start terminal. As shown in the diagram to the right, use this IC in the soft start mode with a capacitor or in the open-collector drive mode with a transistor. Leave the soft start terminal open when not using it since it is already pulled up in the IC.

Cautions: (1) A high-ripple current flows through C1 and C2. Use high-ripple type 1000F or higher capacitors with low internal resistance. Refer to the respective data books for more information on reliability and electrical characteristics of the capacitor. (2) C3 is a capacitor used for soft start. (3) L1 should be a choke coil with a low core loss for switching power supplies. (4) Use a Schottky barrier diode for D1 and make sure that the reverse voltage applied to the 2nd terminal (SWOUT terminal) is within the maximum ratings (1V). If you use a fast-recovery diode, the recovery voltage and the ON forward voltage may cause a reversed-bias voltage exceeding the maximum ratings to be applied to the 2nd terminal (SWOUT terminal). Applying a reversed-bias voltage exceeding the maximum rating to the 2nd terminal (SWOUT terminal) may damage the IC. (5) The 4th terminal (VS) is an output voltage detection terminal. Since this terminal has a high impedance, connect it to the positive (+) terminal of C2 via the shortest possible route. (6) Leave the 5th terminal (soft start terminal) open when not using it. It is pulled up internally. (7) To ensure optimum operating environment, connect the highfrequency current line with minimum wiring length.

SI-3201S
5 SS C3

SI-3201S
5 SS

SI-3201S
5 SS C3

22

Switching Type Regulator ICs SI-3201S

Electrical Characteristics
Line Regulation
5.10

Load Regulation
5.15 5.10
Output voltage VO (V)

Rise Characteristics
6 5
Output voltage VO (V)

5.05
Output voltage VO (V)

5.05 5.00 4.95 4.90 4.85

4 3 2 1 0

Io = 0A = 1A = 2A = 3A

5.00

4.95

Io = 0A = 1A = 2A = 3A

VIN =18V = 10V = 7V

4.90

4.85 0 5 10 15 20 25 30 35
Input voltage VIN (V)

0.5

1.0

1.5

2.0

2.5

3.0

10

Output current IO (A)

Input voltage VIN (V)

Efficiency Curve
90

Overcurrent Protection Characteristics


6 5
Output voltage VO (V)

Overcurrent Protection Temperature Characteristics


6 5
Output voltage VO (V)

80

70

Efficiency

V IN = 18V = 10V = 7V

4 3 2 1 0

VIN =18V = 10V = 7V

(%)

4 3 2 1 0

TC = +100, 25, --20C

60

50

40 0 0.5 1.0 1.5 2.0 2.5 3.0


Output current IO (A)

1.0

2.0

3.0

4.0

5.0

1.0

2.0

3.0

4.0

5.0

Output current IO (A)

Output current IO (A)

Ta PD Characteristics
25
With infinite heatsink With silicone grease Heatsink: aluminum

Power Dissipation PD (W)

20

15

10

0 40

40

80

120

160

Operating temperature Ta (C)

23

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04

Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed Surface-mount full-mold package

External Dimensions (unit: mm)


1.0 0.3 0.25 0.89 0.15 2.54 0.25 0.75 0.05
+0.15

SMD-16A

16 9.8 0.3 6.8max 3.0 0.2 6.3 0.2 8.0 0.5

a b
Pin 1 20.0max 19.56 0.2 8

0 to 0.15

0.3 0.05

+0.15

Absolute Maximum Ratings


Parameter Power supply voltage Drive terminal applied voltage Input terminal voltage DIAG output applied voltage DIAG output source current Voltage across power supply and drive terminal Output current Power dissipation Junction temperature Operating temperature Storage temperature Symbol VB VD VIN VDIAG IDIAG VBD IO PD Tj TOP Tstg Ratings 13 to +40 0.3 to VB 0.3 to +7.0 0.3 to +7.0 3 VB 0.4 1.5 2.6 40 to +150 40 to +100 40 to +150 Unit V V V V mA V A W C C C Conditions

(Ta=25C)

4.0max

3.6 0.2 1.4 0.2

a: Part No. b: Lot No.

Equivalent Circuit Diagram


Without heatsink, all circuits operating
The MIC is bound by the dotted lines. 9,12,16 VB 2

Pre. Reg. IN1 DIAG1 2 3 DIAG DET.


CONT. 11k typ. O.C.P

Drive

1,15 T.S.D 14

Electrical Characteristics
Ratings Parameter Operating power supply voltage Quiescent circuit current Threshold input voltage Hi output Input current Lo output Saturation voltage of output transistor Output terminal sink current Saturation voltage of DIAG output Leak current of DIAG output Open load detection resistor Overcurrent protection starting current Output transfer time TOFF TPLH DIAG output transfer time TPHL 15 30 15 10 30 30 I IN VCE (sat) IO (off) VDL IDGH Ropen IS TON 1 1.6 8 30 0 100 0.5 2.0 0.3 100 30 Symbol VBopr Iq VINth I IN 0.8 min 6.0 5 typ max 16 12 3.0 1.0

Out1 2

(VBopr =14V, Ta=25C unless otherwise specified)

D1 1

Unit V

Conditions
IN2 DIAG2 7 6
CONT. 11k typ. O.C.P

Drive

mA V mA A V mA V A k A s s s s

Lo output

DIAG DET.

8,10 11 4,5,13

Out2

*2

D2 1

VIN = 5V VIN = 0V IO 1.0A, VBopr = 6 to 16V VO = 0V, VIN = 0V IDIAG = 3mA VDIAG = 5V
[Abbreviations] Drive: Drive circuit CONT: ON/OFF circuit Pre.Reg: Pre-regulator

GND

*2

DIAG.DET.: Diagnostic circuit O.C.P.: Overcurrent protection T.S.D.: Thermal protection

*1. The base terminal (D terminal) is connected to the output transistor base. It is also connected to the control monolithic IC. Do not, therefore, apply an external voltage in operation. *2. SDH04 have two or three terminals of the same function (VB, Out1, Out 2, GND). The terminals of the same function must be shorted at a pattern near the product.

VO = VBopr 1.9V IO = 1A IO = 1A IO = 1A IO = 1A

Standard Circuit Diagram


VB PZ D1 Out

Note: * The rule of protection against reverse connection of power supply is VB = 13V, one minute (all terminals except, VB and GND, are open).

SDH04

VCC DIAG 5.1k

Diagnostic Function
GND VB
3.0V

IN

GND

VIN

0.8V

Truth table VIN VO


H
SHORT Is OPEN OPEN OVER VOLTAGE

Load
GND
H L L
TSD

GND

VOUT

IO

Note 1: A pull-down resistor (11 k typ.) is connected to the IN terminal. VOUT turns "L" when a high impedance is connected to the IN terminal in series.

GND VDIAG
Normal Shorted load Open load Overvoltage Overheat ERROR SIGNAL for CPU

24

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SDH04

Electrical Characteristics
Quiescent Circuit Current (dual circuit)
20 Ta = 40C 25C 125C VIN = 0V

Circuit Current (single circuit)


50 VIN = 5V Ta = 40C

Circuit Current (dual circuit)


100 VIN = 5V

40 25C

80

Ta = 40C 25C

Iq (mA)

IB (mA)

10

125C 20 VIN = 0V

IB (mA)

30

60

40

125C

VO shorted VO open 0 0 10 20 30 40 46

10

20 VIN = 0V

0 0

10

20

30

40

46

0 0

10

20

30

40

46

VB (V)

VB (V)

VB (V)

Saturation Voltage of Output Transistor


1.5 VB = 16V VB = 6V Ta = 125C

Overcurrent Protection Characteristics (Ta=40C)


20 VB = 18V

Overcurrent Protection Characteristics (Ta=25C)


20 VB = 18V

15

15

VCE (sat) (V)

1.0

VO (V)

VO (V)

25C 0.5 40C

10

14V

10

14V

5 6V

5 6V

IO (A)

IO (A)

IO (A)

Overcurrent Protection Characteristics (Ta=125C)


20 VB = 18V 15

Threshold Characteristics of Input Voltage


15 Ta = 125C

Input Terminal Source Current


1.0

VB = 14V IO = 1A
25C 40C

VB = 14V

0.8 10

IIN (mA)

VO (V)

VO (V)

14V 10

0.6 Ta = 125C 25C 40C

0.4

5 5 6V 0.2

10

IO (A)

VIN (V)

VIN (V)

Input Terminal Sink Current


1.0

Saturation Voltage of DIAG Output


0.3 VB = 14V IDIAG = 3mA 0.2

VB = 14V VIN= 0V

IINL (A)

0.5

VDL (V)
0.1 0 50 100 150 0 50

0 50

50

100

150

Ta (C)

Ta (C)

25

High-side Power Switch ICs [With Diagnostic Function] SI-5151S

Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply TO220 equivalent full-mold package not require insulation mica

External Dimensions (unit: mm)


3.2 0.2 10 0.2 4.2 0.2 2.8 0.2

4 0.2

7.9 0.2 16.9 0.3

2.6 0.1

a
2.9 0.3
+0.2

Absolute Maximum Ratings


Parameter Power supply voltage Input terminal voltage DIAG terminal voltage Collector-emitter voltage Output current Symbol VB VIN VDIAG VCE IO PD1 Power Dissipation PD2 Junction temperature Operating temperature Storage temperature Tj TOP Tstg 1.5 40 to +125 40 to +100 40 to +125 W C C C Ratings 40 0.3 to VB 6 40 1.8 18 Unit V V V V A W Conditions

(Ta=25C)

0.94 0.15

R-end

0.85 0.1

+0.2

0.45 0.1

P1.7 0.1 4 = 6.8

4 0.6

With infinite heatsink (Tc = 25C) Stand-alone without heatsink (Tc = 25C)

1. GND 2. VIN 3. VO 4. DIAG 5. VB

a: Part No. b: Lot No.

(Forming No. 1123)

Standard Circuit Diagram


VB 5

Electrical Characteristics
Parameter Operating power supply voltage Quiescent circuit current Saturation voltage of output transistor Output leak current Output ON Input voltage Output OFF Output ON Input current Output OFF Overcurrent protection starting current Thermal protection starting temperature Open load detection resistor Output transfer time TOFF VDH DIAG output voltage VDL TPLH DIAG output transfer time TPHL Minimum load inductance L 1 30 0.3 30 V s s mH 4.5 15 30 6 I IL IS 0.1 1.9 mA A VIL I IH 0.3 0.8 1 V mA Symbol VBopr Iq VCE (sat) 1.0 IO, leak VIH 2.0 2 VB V mA V Ratings min 6.0 5 typ max 30 12 0.5 Unit V mA V

(Ta=25C unless otherwise specified)

VO

PZ VCC

Conditions
VIN 2 LS-TTL or CMOS

SI-5151S

3 DIAG 4

5.1k

VBopr = 14V, VIN = 0V IO 1.0A, VBopr = 6 to 16V IO 1.8A, VBopr = 6 to 16V VCEO = 16V VBopr = 6 to 16V VBopr = 6 to 16V VIN = 5V VIN = 0V VBopr = 14V, VO = VBopr 1.5V

Load

Truth table VIN VO


H L H L

GND

Diagnostic Function
TTSD Ropen TON 8 125 145 30 30 C k s s V VBopr = 6 to 16V VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A VCC = 6V VCC = 6V, IDD = 2mA VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A
Normal Open load Shorted load Overheat Normal

VIN VO DIAG

Note: * The rule of protection against reverse connection of power supply is VB = 13V, one minute (all terminals except, VB and GND, are open).

VO VIN DIAG L L L H H H L H H Open load H H H L L L Shorted load H L L L L L Overheat H L L DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.

Mode

Normal

26

3.6 0.5

+0.2

20 max

High-side Power Switch ICs [With Diagnostic Function] SI-5151S

Electrical Characteristics
Quiescent Circuit Current
10

Circuit Current
40
Ta = --40C

Saturation Voltage of Output Transistor


1.0

30

IB (mA)

Iq (mA)

95C

25C

--40C

VCE (sat) (V)

Ta = 25C

V B= 6 to 16V

20

Ta = 95C

0.5

95C

--40C

10
25C

0 0 10 20 30 40

0
0 10 20 30 40 50

VB (V)

VB (V)

IO (A)

Overcurrent Protection Characteristics (Ta= 40C)


16 14 12 10
VB = 14V

Overcurrent Protection Characteristics (Ta=25C)


16 14 12 10

Overcurrent Protection Characteristics (Ta=100C)


16 14

VB = 14V

12 10

VB = 14V

VO (V)

VO (V)

8 6 4 2 0 0 1 2 3

8 6 4 2 0 0 1 2 3

VO (V)

8 6 4 2 0 0 1 2 3

IO (A)

IO (A)

IO (A)

Threshold input voltage


20

Input Current (Output ON)


1.0

Input Current (Output OFF)


2

Ta = 95C
15

25C 40C

VIN = 5V VB = 14V

VIN = 0V VB = 14V

VB = 16V I O = 1A

IIH (mA)

IIL (A)
0 50 100

VO (V)

10

0.5

0 0 1 2 2.2

0 40

0 40

50

100

VIN (V)

Ta (C)

Ta (C)

Saturation Voltage of DIAG Output


0.2

Thermal Protection Characteristics


16 14 12 6

VB = 14V

Vo DIAG VB = 14V IO = 10mA

VDG (sat) (V)

DIAG (V)

VO (V)

10 8 6 4 2

5 4 3 2 1

0.1

0 40

0
0 50 100

50

100

150

Ta (C)

Ta (C)

27

High-side Power Switch ICs [With Diagnostic Function] SI-5152S

Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed TO220 equivalent full-mold package not require insulation mica

External Dimensions (unit: mm)


3.2 0.2 10 0.2 4.2 0.2 2.8 0.2

4 0.2

7.9 0.2 16.9 0.3

2.6 0.1

a
2.9 0.3
+0.2

0.94 0.15

Absolute Maximum Ratings


Parameter Power supply voltage Input terminal voltage DIAG terminal voltage Collector-emitter voltage Output current Power Dissipation PD2 Junction temperature Operating temperature Storage temperature Tj TOP Tstg 1.8 40 to +150 40 to +100 40 to +150 W C C C Symbol VB VIN VDIAG VCE IO PD1 Ratings 40 0.3 to VB 6 40 1.8 22 Unit V V V V A W Conditions

(Ta = 25C)
0.85 0.1
+0.2

R-end

0.45 0.1

P1.7 0.1 4 = 6.8

4 0.6

1. GND 2. VIN 3. VO 4. DIAG 5. VB


With infinite heatsink (Tc=25C) Stand-alone without heatsink

a: Part No. b: Lot No.

(Forming No. 1123)

Standard Circuit Diagram


VB 5

Electrical Characteristics
Ratings Parameter Operating power supply voltage Quiescent circuit current Saturation voltage of output transistor Output leak current Output ON Input voltage Output OFF Output ON Input current Output OFF Overcurrent protection starting current Thermal protection starting temperature Open load detection resistor Output transfer time TOFF DIAG output leak current Saturation voltage of DIAG output DIAG output transfer time TPHL Minimum load inductance L 1 30 IDIAG VDL TPLH 15 30 100 0.3 30 I IL IS 0.1 1.9 mA A VIL I IH 0.3 0.8 1 V mA Symbol VBopr Iq VCE (sat) 1.0 IO, leak VIH 2.0 2 VB V mA V min 6.0 5 typ max 30 12 0.5 Unit V mA V

VO

(Ta=25C unless otherwise specified)

PZ VCC

SI-5152S
VIN 2 LS-TTL or CMOS

3 DIAG 4

Conditions

5.1k

VBopr = 14V, VIN = 0V IO 1.0A, VBopr = 6 to 16V IO 1.8A, VBopr = 6 to 16V VCEO = 16V, VIN = 0V VBopr = 6 to 16V VBopr = 6 to 16V VIN = 5V VIN = 0V VBopr = 14V, VO = VBopr 1.5V

Load

VIN H L

Truth table VO
H L

GND

Diagnostic Function
Normal Open load Shorted load Overheat Normal

TTSD Ropen TON

150 30 8 30

C k s s A V s s mH

VBopr 6V VBopr = 6 to 16V VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A VCC = 6V, VBopr = 6 to 16V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A

VIN VO DIAG

Mode Normal

Note: * The rule of protection against reverse connection of power supply is VB = 13V, one minute (all terminals except, VB and GND, are open).

Open load Shorted load Overheat

VIN L H L H L H L H

VO L H H H L L L L

DIAG
L H H H L L L L

DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.

28

3.6 0.5

+0.2

20 max

High-side Power Switch ICs [With Diagnostic Function] SI-5152S

Electrical Characteristics
Quiescent Circuit Current
10

Circuit Current
40
Ta = 40C

Saturation Voltage of Output Transistor


1.0

30

Iq (mA)

40C

VCE (sat) (V)

Ta = 25C

VB = 6 to 16V

IB (mA)

95C

25C

20

Ta = 95C

0.5

95C

40C

10
25C

0 0 10 20 30 40

0
0 10 20 30 40 50

VB (V)

VB (V)

IO (A)

Overcurrent Protection Characteristics (Ta = 40C)


16 14 12 10
VO (V)
VB = 14V

Overcurrent Protection Characteristics (Ta=25C)


16 14 12 10

Overcurrent Protection Characteristics (Ta=100C)


16 14

VB = 14V

12 10

VB = 14V

VO (V)

8 6 4 2 0 0 1 2 3

8 6 4 2 0 0 1 2 3

VO (V)

8 6 4 2 0 0 1 2 3

IO (A)

IO (A)

IO (A)

Threshold input voltage


20

Input Current (Output ON)


1.0

Input Current (Output OFF)


2

Ta = 95C
15

25C 40C

VIN = 5V VB = 14V

VIN = 0V VB = 14V

VB = 16V IO = 1A

IIH (mA)

IIL (A)
0 50 100

VO (V)

10

0.5

0 0 1 2 2.2

0 40

0 40

50

100

VIN (V)

Ta (C)

Ta (C)

Saturation Voltage of DIAG Output


0.2

VB = 14V

VDL (V)

0.1

0 40

50

100

Ta (C)

29

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S

Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed Built-in Zener diode TO220 equivalent full-mold package not require insulation mica

External Dimensions (unit: mm)


3.2 0.2 10 0.2 4.2 0.2 2.8 0.2

4 0.2

7.9 0.2 16.9 0.3

2.6 0.1

a
2.9 0.3
+0.2

0.94 0.15

R-end

0.85 0.1

+0.2

0.45 0.1

Parameter Power supply voltage Input terminal voltage DIAG terminal voltage Collector-emitter voltage Output current Power Dissipation

Symbol VB VIN VDIAG VCE IO PD1 PD2

Ratings 13 to +40 0.3 to VB 6 VB VZ 2.04 22 1.8 40 to +150 40 to +100 40 to +150

Unit V V V V A W W C C C

Conditions

P1.7 0.1 4 = 6.8

4 0.6

Refer to "Surge clamp voltage" in Electrical Characteristics

1. GND 2. VIN 3. VO 4. DIAG 5. VB

a: Part No. b: Lot No.

(Forming No. 1123)

With infinite heatsink (Tc=25C) Stand-alone without heatsink

Junction temperature Operating temperature Storage temperature

Tj TOP Tstg

Standard Circuit Diagram


VB 5 VO

Electrical Characteristics
Ratings Parameter Operating power supply voltage Quiescent circuit current Saturation voltage of output transistor Output leak current Output ON Input voltage Output OFF Output ON Input current Output OFF Overcurrent protection starting current Thermal protection starting temperature Open load detection resistor Output transfer time TOFF VDH DIAG output voltage VDL TPLH DIAG output transfer time TPHL Minimum load inductance Surge clamp voltage L 1 28 34 40 30 0.3 30 V s s mH V 4.5 15 30 6 I IL IS 0.1 2.05 mA A VIL I IH 0.3 0.8 1 V mA Symbol VBopr Iq VCE (sat) IO, leak VIH 2.0 min 6.0 5 typ max 30 12 0.47 2 VB Unit V mA V mA V

SI-5153S
(Ta=25C unless otherwise specified)
VIN 2 LS-TTL or CMOS

3 DIAG 4

VCC

Conditions
1

5.1k

VBopr = 14V, VIN = 0V IO 2.05A, VBopr = 6 to 16V VCEO = 16V, VIN = 0V VBopr = 6 to 16V VBopr = 6 to 16V VIN = 5V VIN = 0V VBopr = 14V, VO = VBopr 1.5V

Load
GND
Overheat Normal

Truth table VIN VO


H L H L

Diagnostic Function
Normal Open load Shorted load

TTSD Ropen TON

150 30 8 30

C k s s V

VBopr 6V

VIN
VBopr = 6 to 16V VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A VCC = 6V, VBopr = 6 to 16V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A
VO VIN DIAG L L L H H H L H H Open load H H H L L L Shorted load H L L L L L Overheat H L L DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.

VO DIAG

Mode

Normal

*1

VZ

IC = 5mA

Note: *1. The Zener diode for surge clamping has an energy capability of 140 mJ (single pulse). * The rule of protection against reverse connection of power supply is VB = 13V, one minute. * This driver is exclusively used for ON/OFF control.

30

3.6 0.5

Absolute Maximum Ratings

(Ta=25C)

+0.2

20 max

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5153S

Electrical Characteristics
Quiescent Circuit Current
10

Circuit Current
50

Saturation Voltage of Output Transistor


2

40

VCE (sat) (V)

Ta = 40C

Iq (mA)

Ta = 40C 25C 150C

IB (mA)

30 25C 20 150C 10

Ta = 125C

VB = 6 to 16V

25C 40C

0 0

10

20

30

40

0 0

10

20

30

40

VB (V)

VB (V)

IO (A)

Overcurrent Protection Characteristics (Ta=40C)


20 VB = 18V 15 14V 10

Overcurrent Protection Characteristics (Ta =25C)


20 VB = 18V 15

Overcurrent Protection Characteristics (Ta=125C)


20 VB = 18V 15 14V

VO (V)

VO (V)

14V 10

VO (V)

10 8V 5

8V 5 5

8V

IO (A)

IO (A)

IO (A)

Threshold Characteristics of Input Voltage


20 Ta = 150C 25C 40C 15

Input Current (Output ON)


1.0

Input Current (Output OFF)


5

VB = 14V VIN = 5V
0.8 4

VB = 14V VIN = 0V

VB = 16V IO = 1A

I IH (mA)

10

0.4

I IL (A)
0 50 100 150

VO (V)

0.6

5 0.2 1

0 50

0 50

50

100

150

VIN (th) (V)

Ta (C)

Ta (C)

Output Terminal Leak Current


2

Saturation Voltage of DIAG Output


0.5

Thermal Protection Characteristics


20

VB = 14V
0.4

VB = 14V IDIAG = 2mA


15

VB = 14V VDIAG = 5V IO = 10mA VO

IO leak (mA)

VDL (V)

VO (V)

0.3

10

0.2

0.1

VDIAG

0 50

50

100

150

0 50

0 0 50 100 150 0 50 100 150 200

Ta (C)

Ta (C)

Ta (C)

31

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S

Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed Built-in Zener diode TO220 equivalent full-mold package not require insulation mica

External Dimensions (unit: mm)


3.2 0.2 10 0.2 4.2 0.2 2.8 0.2

4 0.2

7.9 0.2 16.9 0.3

2.6 0.1

a
2.9 0.3
+0.2

0.94 0.15

Absolute Maximum Ratings


Parameter Power supply voltage Input terminal voltage DIAG terminal voltage Collector-emitter voltage Output current Power Dissipation PD2 Junction temperature Operating temperature Storage temperature Tj TOP Tstg 1.8 40 to +150 40 to +100 40 to +150 W C C C Symbol VB VIN VDIAG VCE IO PD1 Ratings 13 to +40 0.3 to VB 6 VB VZ 2.5 22 Unit V V V V A W Conditions

R-end

(Ta=25C)
0.85 0.1
+0.2

0.45 0.1

P1.7 0.1 4 = 6.8

4 0.6

Refer to "Surge clamp voltage" in Electrical Characteristics

1. GND 2. VIN 3. VO 4. DIAG 5. VB

a: Part No. b: Lot No.

(Forming No. 1123)


With infinite heatsink (Tc =25C) Stand-alone without heatsink

Standard Circuit Diagram


VB 5 VO

Electrical Characteristics
Ratings Parameter Operating power supply voltage Quiescent circuit current Saturation voltage of output transistor Output leak current Output ON Input voltage Output OFF Output ON Input current Output OFF Overcurrent protection starting current Thermal protection starting temperature Open load detection resistor Output transfer time TOFF VDH DIAG output voltage VDL TPLH DIAG output transfer time TPHL Minimum load inductance Surge clamp voltage L 1 28 34 40 30 0.3 30 V s s mH V 4.5 15 30 6 I IL IS 0.1 2.6 mA A VIL I IH 0.3 0.8 1 V mA Symbol VBopr Iq VCE (sat) 0.72 IO, leak VIH 2.0 2 VB V mA V min 6.0 5 typ max 30 12 0.3 Unit V mA V

(Ta=25C unless otherwise specified)

SI-5154S
VIN 2 LS-TTL or CMOS

3 DIAG 4

VCC

Conditions

5.1k

VBopr = 14V, VIN = 0V IO 1.0A, VBopr = 6 to 16V IO 2.5A, VBopr = 6 to 16V VCEO = 16V, VIN = 0V VBopr = 6 to 16V VBopr = 6 to 16V VIN = 5V VIN = 0V VBopr = 14V, VO = VBopr 1.5V

Load
GND
Overheat Normal

Truth table VIN VO


H L H L

Diagnostic Function
Normal Open load Shorted load

TTSD Ropen TON

150 30 8 30

C k s s V

VBopr 6V VBopr = 6 to 16V VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A VCC = 6V, VBopr = 6 to 16V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A

VIN VO DIAG

Mode Normal

*1

VZ

IC = 5mA

Open load Shorted load Overheat

Note: *1. The Zener diode for surge clamping has an energy capability of 200 mJ (single pulse). * The rule of protection against reverse connection of power supply is VB = 13V, one minute. * This driver is exclusively used for ON/OFF control.

VIN L H L H L H L H

VO L H H H L L L L

DIAG
L H H H L L L L

DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.

32

3.6 0.5

+0.2

20 max

High-side Power Switch ICs [With Diagnostic Function, Built-in Zener Diode] SI-5154S

Electrical Characteristics
Quiescent Circuit Current
10

Circuit Current
50

Saturation Voltage of Output Transistor


2

40 Ta= 40C 25C 150C

Ta = 40C 25C

Iq (mA)

IB (mA)

30

VCE (sat) (V)

1 VB = 6 to 16V

Ta = 125C 25C 40C

20

150C

10

0 0

10

20

30

40

0 0

10

20

30

40

VB (V)

VB (V)

IO (A)

Overcurrent Protection Characteristics (Ta= 40C)


20 VB = 18V 16 14V

Overcurrent Protection Characteristics (Ta=25C)


20 VB = 18V 16 14V

Overcurrent Protection Characteristics (Ta=125C)


20 VB = 18V 16 14V

VO (V)

VO (V)

8 8V 4

8 8V

VO (V)

12

12

12

8V

6V

4 6V 0

6V

IO (A)

IO (A)

IO (A)

Threshold input voltage


20 Ta = 125C 25C 40C 15

Input Current (Output ON)


1.0

Input Current (Output OFF)


5

VB = 14V VIN = 5V
0.8 4

VB = 14V VIN = 0V

I IH (mA)

10

0.4

I IL (A)
0 50 100 150

VO (V)

VB = 16V IO = 1A

0.6

5 0.2 1

0 50

0 50

50

100

150

VIN (th) (V)

Ta (C)

Ta (C)

Output Terminal Leak Current


2

Saturation Voltage of DIAG Output


0.5

Thermal Protection Characteristics


20

VB = 14V
0.4

VB = 14V IDIAG = 2mA


15

VB = 14V VDIAG = 5V IO = 10mA VO

IO leak (mA)

VDL (V)

VO (V)

0.3

10

0.2

0.1

VDIAG

0 50

50

100

150

0 50

0 0 50 100 150 0 50 100 150 200

Ta (C)

Ta (C)

Ta (C)

33

High-side Power Switch ICs [With Diagnostic Function] SI-5155S

Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent and thermal protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed TO220 equivalent full-mold package not require insulation mica

External Dimensions (unit: mm)


3.2 0.2 10 0.2 4.2 0.2 2.8 0.2

4 0.2

7.9 0.2 16.9 0.3

2.6 0.1

a
2.9 0.3
+0.2

0.94 0.15

Absolute Maximum Ratings


Parameter Power supply voltage Input terminal voltage DIAG terminal voltage Collector-emitter voltage Output current Power dissipation PD2 Junction temperature Operating temperature Storage temperature Tj TOP Tstg 1.8 40 to +150 40 to +100 40 to +150 W C C C Symbol VB VIN VDIAG VCE IO PD1 Ratings 13 to +40 0.3 to VB 6 40 2.5 22 Unit V V V V A W Conditions

(Ta=25C)
0.85 0.1
+0.2

R-end

0.45 0.1

P1.7 0.1 4 = 6.8

4 0.6

1. GND 2. VIN 3. VO 4. DIAG 5. VB


With infinite heatsink (Tc=25C) Stand-alone without heatsink

a: Part No. b: Lot No.

(Forming No. 1123)

Standard Circuit Diagram


VB 5

Electrical Characteristics
Ratings Parameter Operating power supply voltage Quiescent circuit current Saturation voltage of output transistor Output leak current Output ON Input voltage Output OFF Output ON Input current Output OFF Overcurrent protection starting current Thermal protection starting temperature Open load detection resistor Output transfer time TOFF VDH DIAG output voltage VDL TPLH DIAG output transfer time TPHL Minimum load inductance L 1 30 0.3 30 V s s mH 4.5 15 30 6 I IL IS 0.1 2.6 mA A VIL I IH 0.3 0.8 1 V mA Symbol VBopr Iq VCE (sat) 0.72 IO, leak VIH 2.0 2 VB V mA V min 6.0 5 typ max 30 12 0.3 Unit V mA V

VO

(Ta=25C unless otherwise specified)

PZ VCC

SI-5155S
VIN 2 LS-TTL or CMOS

3 DIAG 4

Conditions

5.1k

VBopr = 14V, VIN = 0V IO 1.0A, VBopr = 6 to 16V IO 2.5A, VBopr = 6 to 16V VCEO = 16V, VIN = 0V VBopr = 6 to 16V VBopr = 6 to 16V VIN = 5V VIN = 0V VBopr = 14V, VO = VBopr 1.5V

Load
GND
Overheat Normal

Truth table VIN VO


H L H L

Diagnostic Function
Normal Open load Shorted load

TTSD Ropen TON

150 30 8 30

C k s s V

VBopr 6V VBopr = 6 to 16V VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A VCC = 6V, VBopr = 6 to 16V VCC = 6V, VBopr = 6 to 16V, IDO = 2mA VBopr = 14V, IO = 1A VBopr = 14V, IO = 1A

VIN VO DIAG

Mode Normal Open load Shorted load Overheat

Note: * The rule of protection against reverse connection of power supply is VB = 13V, one minute (all terminals except, VB and GND, are open).

VIN L H L H L H L H

VO L H H H L L L L

DIAG
L H H H L L L L

DIAG output will be undetermined when a voltage exceeding 25V is applied to VB terminal.

34

3.6 0.5

+0.2

20 max

High-side Power Switch ICs [With Diagnostic Function] SI-5155S

Electrical Characteristics
Quiescent Circuit Current
10

Circuit Current
50

Saturation Voltage of Output Transistor


2

40 Ta= 40C 25C 150C

Ta = 40C 25C

Iq (mA)

IB (mA)

30

VCE (sat) (V)

1 VB = 6 to 16V

Ta = 125C 25C 40C

20

150C

10

0 0

10

20

30

40

0 0

10

20

30

40

VB (V)

VB (V)

IO (A)

Overcurrent Protection Characteristics (Ta= 40C)


20 VB = 18V 16 14V

Overcurrent Protection Characteristics (Ta=25C)


20 VB = 18V 16 14V

Overcurrent Protection Characteristics (Ta =125C)


20 VB = 18V 16 14V

VO (V)

VO (V)

8 8V 4

8 8V

VO (V)

12

12

12

8V

6V

4 6V 0

6V

IO (A)

IO (A)

IO (A)

Threshold input voltage


20 Ta = 125C 25C 40C 15

Input Current (Output ON)


1.0

Input Current (Output OFF)


5

VB = 14V VIN = 5V
0.8 4

VB = 14V VIN = 0V

I IH (mA)

10

0.4

I IL (A)
0 50 100 150

VB = 16V IO = 1A

VO (V)

0.6

5 0.2 1

0 50

0 50

50

100

150

VIN (th) (V)

Ta (C)

Ta (C)

Output Terminal Leak Current


2

Saturation Voltage of DIAG Output


0.5

Thermal Protection Characteristics


20

VB = 14V
0.4

VB = 14V IDIAG = 2mA


15

VB = 14V VDIAG = 5V IO = 10mA VO

IO leak (mA)

VDL (V)

VO (V)

0.3

10

0.2

0.1

VDIAG

0 50

50

100

150

0 50

0 0 50 100 150 0 50 100 150 200

Ta (C)

Ta (C)

Ta (C)

35

High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M

Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use (VCE (sat) 0.2V) Allows direct driving using LS-TTL and C-MOS logic levels Built-in Zener diode in transistor eliminates the need of (or simplifies) external surge absorption circuit Built-in independent overcurrent and thermal protection circuit in each circuit Built-in protection against reverse connection of power supply Tj = 150C guaranteed

External Dimensions (unit: mm)


31 0.2 24.4 0.2 3.2 0.15

Ellipse 3.2 0.15 3.8

4.8 0.2 1.7 0.1

12.9 0.2

16 0.2 9.9 0.2

a b

2.45 0.2

6.4 0.5

1.15 0.1 14 P2.03 0.1 = (28.42)

+0.2

0.65 0.1

+0.2

0.55 0.1

+0.2

Absolute Maximum Ratings


Parameter Power supply voltage Drive terminal applied voltage Input terminal voltage DIAG output applied voltage DIAG output source current Voltage across power supply and output terminal Voltage across power supply and drive terminal Output current Output reverse current Electrostatic resistance Power Dissipation Junction temperature Operating temperature Storage temperature Symbol VB VD VIN VDIAG IDIAG VBO Ratings 13 to +40 0.3 to VB 0.3 to +7.0 0.3 to +7.0 3 VB 34 Unit V V Conditions

(Ta=25C)
31.3 0.2

a: Part No. b: Lot No.


15

1 23

V V mA V

Equivalent Circuit Diagram


VB

VBD IO IO ES/A PD Tj TOP Tstg

0.4 1.5 1.8 250 4.8 40 to +150 40 to +115 50 to +150

V A
a b d c f g e

A V W C C C
MIC

C = 200pF, R = 0 Stand-alone without heatsink, all circuits operating

VIN

OUT D

GND

FLT

Electrical Characteristics
Ratings Parameter Operating power supply voltage Quiescent circuit current (per circuit) Circuit current (per circuit) Threshold input voltage Hi output Input voltage Lo output Hi output Input current Lo output Saturation voltage of output transistor Output terminal sink current Surge clamp voltage Saturation voltage of DIAG output Leak current of DIAG output Open load detection resistor Overcurrent protection starting current Thermal protection starting temperature Output transfer time TOFF TPLH DIAG output transfer time TPHL Minimum load inductance Maximum ON duty Lo D(ON) 1.0 0 I IN VCE (sat) VCE (sat) IO (off) 29 VBO 28 VDL IDGH Ropen IS 5.5 1.6 34 1.0 2.5 34 100 VIN I IN Symbol VBopr Iq IB VINth VIN 0.8 3.7 min 6.0 0.8 19.3 typ

(VBopr =14V, Tj= 40 to +150C unless otherwise specified)

a: Pre-regulator b: Overvoltage protection circuit c: Control circuit d: Driver circuit

e: Overcurrent protection circuit f: Diagnostic circuit g: Thermal protection circuit

max 16 1.6

Unit V mA mA

Conditions

Lo output Tj = 25C

Standard Circuit Diagram


VB VCC

3.0

V V

1.5 1.0

V mA A VIN = 5V VIN = 0V IO 1.2A, VBopr = 6 to 16V IO 1.5A, VBopr = 6 to 16V Tj = 25C, VCEO = 14V Tj = 25C, IC = 10mA IC = 5mA IDGH = 2mA, VBopr = 6 to 16V VCC = 7V

5 7

1 VB IN1 IN2

3 9 14 D1 D2 D3 FLT1 4

SLA2501M

FLT2 8

12 IN3

0.2

V V

FLT3 13 GND1 GND2 OUT1 OUT2 OUT3 6 11 2 10 15

5 39 40 0.4 100

mA V V V A k A

Diagnostic Function
VO = VBopr 1.5V
Normal Open load Shorted load Overheat Normal

TTSD TON 30 100 30 100

C s s s s mH 60 %

VBopr 6V IO = 1A IO = 1A IO = 1A IO = 1A

VIN VO VDIAG

36

Note: * The Zener diode has an energy capability of 200 mJ (single pulse). * A start failure may occur if a short OFF signal of 10 ms or below is input in the VIN terminal.

High-side Power Switch ICs [With Diagnostic Function, 3-circuits] SLA2501M

Electrical Characteristics
Quiescent Circuit Current (single circuit)
5
VIN = 0V

Circuit Current (single circuit)


40
VIN = 5V

Saturation Voltage of Output Transistor


1.0

Ta = 40C
4

V IN = 5V V B = 6 to 16V Ta =150C Ta =125C

Iq (mA)

IB (mA)

VCE (sat) (V)

Ta = 40C Ta = 25C Ta = 125C

30

Ta = 25C

Ta = 40C
0.5

20

Ta = 125C

Ta = 25 C
1

10

0 0 10 20 30 40

10

20

30

40

3.5

VB (V)

VB (V)

IO (A)

Overcurrent Protection Characteristics (Ta= 40C)


20

Overcurrent Protection Characteristics (Ta=25C)


20

Overcurrent Protection Characteristics (Ta=125C)


20

VB = 14V

V B = 14V

VB = 14V

VO (V)

VO (V)

VO (V)
0 1 2 3 4 5

10

10

10

0 0 1 2 3 4

0 0 1 2 3 4

IO (A)

IO (A)

IO (A)

Threshold Input Voltage


20

Input Current (Output ON)


I OUT = 1A 25C 40C
1.0 VB = 14V V IN = 0V

Input Current (Output OFF)


20

VB = 16V Ta = 125C

V B = 14V

V IN = 0V

IIH (mA)

10

0.5

IIL (A)

VO (V)

10

0 0 1 2 3 4

0 --50

50

100

125

0 50

50

100

125

VIN (V)

Ta (C)

Ta (C)

Saturation Voltage of DIAG Output


0.3

Output Reverse Current


1.4

Thermal Protection
20 10

V B = 14V VIN = 5V I FLT = 3 (mA)

V B = 16V IO = 10mA VO

1.2 1.0

0.2

VDL (V)

Ta = 25C
0.6 0.4 0.2

VO (V)

VF (V)

0.8

Ta = --40C Ta = 125C

10

VFLT (V)

V FLT
5

0.1

0 50

50

100

125

0 0

60

100

160

180

Ta (C)

IF (A)

Ta (C)

37

High-side Power Switch ICs [With Diagnostic Function, 4-circuits] SLA2502M

Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals Low saturation PNP transistor use (VCE (sat) 0.5V) Allows direct driving using LS-TTL and C-MOS logic levels Built-in overcurrent protection circuits Built-in protection against reverse connection of power supply Tj = 150C guaranteed

External Dimensions (unit: mm)


310.2 24.4 0.2 3.2 0.15 Ellipse 3.2 0.15 3.8 4.8 0.2 1.7 0.1

16 0.2 9.9 0.2

12.9 0.2

a b

2.45 0.2

Absolute Maximum Ratings


Parameter Power supply voltage Input terminal voltage DIAG output applied voltage DIAG output source current Output current Power Dissipation Junction temperature Operating temperature Storage temperature Symbol VB VIN VDIAG IDIAG IO PD Tj TOP Tstg Ratings 13 to +40 0.3 to +7.0 0.3 to +7.0 3 1.2 4.8 40 to +150 40 to +100 50 to +150 Unit V V V mA A W C C C Conditions

6.4 0.5

(Ta=25C)

1.15 0.1 14 P2.03 0.1 = (28.42)

+0.2

0.65 0.1

+0.2

0.55 0.1

+0.2

31.3 0.2

a: Part No. b: Lot No.

1 23

15

Stand-alone operation without heatsink; all circuits operating

Equivalent Circuit Diagram


SLA2502M
The MIC is bound by the dotted lines. Pre. Reg. 8 VB

Electrical Characteristics
Parameter Operating power supply voltage Quiescent circuit current (per circuit) Threshold input voltage Hi output Input current Lo output Saturation voltage of output transistor Output terminal sink current Saturation voltage of DIAG output Leak current of DIAG output Open load detection resistor Overcurrent protection starting current Output transfer time TOFF TPLH DIAG output transfer time TPHL 15 30 15 10 30 30 I IN VCE (sat) IO (off) VDL IDGH Ropen IS TON 1.6 8 30 0 100 0.5 2.0 0.3 100 30 Symbol VBopr Iq VINth I IN 0.8 Ratings min 6.0 5 typ

NI1

2 3

(VBopr =14V, Ta=25C unless otherwise specified)

CONT. 11k typ.

Drive
O.C.P

DIAG1

DIAG DET

1 T.S.D

Out1

max 16 12 3.0 1.0

Unit V mA V mA A V mA V A k A s s s s VIN = 5V VIN = 0V VIN = 0V

Conditions
NI2 DIAG2 GND1 6 5 4
CONT. 11k typ.

Drive
O.C.P

DIAG DET

Out2

Pre. Reg. NI3 DIAG3 10 11


CONT. 11k typ.

Drive
O.C.P

DIAG DET

9 T.S.D

IO 1.0A, VBopr = 6 to 16V VO = 0V, VIN = 0V I DIAG = 3mA


GND4 NI4 DIAG4 14 13 12
CONT. 11k typ.

Out3

Drive
O.C.P

DIAG DET

15

Out4

VDIAG = 5V [Abbreviations] Drive: Drive circuit CONT: ON/OFF circuit Pre.Reg: Pre-regulator

VO = VBopr 1.9V IO = 1A IO = 1A IO = 1A IO = 1A

DIAG.DET.: Diagnostic circuit O.C.P.: Overcurrent protection T.S.D.: Thermal protection

Standard Circuit Diagram


VB PZ D1 Out

Note: * The rule of protection against reverse connection of power supply is VB = 13V, one minute (all terminals except VB and GND should be open).

Diagnostic Function
IN

SLA2502M
DIAG

VCC

5.1k
GND

3.0V

GND

VIN

0.8V

Truth table VIN VO


VOUT
SHORT Is OPEN OPEN OVER VOLTAGE TSD

Load
GND
H L H L

VB

GND

IO

GND VDIAG
Normal Shorted load Open load Overvoltage Overheat

Note 1: A pull-down resistor (11k typ.) is connected to the IN terminal. VOUT turns "L" when a high impedance is connected to the IN terminal in series. Note 2: Grounds GND1 and GND2 are not wired internally. They must be shorted at a pattern near the product.

ERROR SIGNAL for CPU

38

High-side Power Switch ICs [With Diagnostic Function, 4-circuits] SLA2502M

Electrical Characteristics
Circuit Current (single circuit)
60 50 40 Ta = 40C 150 25C Ta = 40C

Circuit Current (4 circuits)


200

Saturation Voltage of Output Transistor


1.0 VB (VB = 14V)

VCE (sat) (V)

Ta = 125C 0.5

IB (mA)

30 20

IB (mA)

25C 100 125C

25C

125C VIN = 0V

40C

50 VIN = 0V

10 0 0 0 0 0 0

10

20

30

40

46

10

20

30

40

46

VB (V)

VB (V)

IO (A)

Overcurrent Protection Characteristics (Ta=40C)


20 VB = 18V 15 14V 10

Threshold Input Voltage


20

Input Current (Output OFF)


3 VB = 14V VIN = 0V

15

Ta = 125C 25C 40C 2

10

I IL (A)
1 1 2 3 0 50

VO (V)

VO (V)
4

6V

0 0

0 0

50

100

150

IO (A)

VIN (V)

Ta (C)

Input Current (Output Hi)


0.5 VB = 14V 0.4

Saturation Voltage of DIAG Output


0.3 VB = 14V IDIAG = 3mA 0.2

Quiescent Circuit Current (dual circuit)


20 Ta = 40V 25V 125V VIN = 0V

Ta = 40C 25C VDL (V)

I IH (mA)

Iq (mA)
0.1

0.3

125C
0.2

10

0.1

VO shorted VO open 1 2 3 4 5 6 0 50 0 50 100 150 0 0 10 20 30 40 46

0 0

VIN (V)

Ta (C)

VB (V)

Thermal Protection Characteristics


15

Output Terminal Leak Current (VO = 0V)


1.1 1.0 Ta = 40C 25C

Open Load Detection Resistor


15

IOLEAK (mA)

VO1 (V)

TSD VB = 14V RL = 1.3k 5

ROPEN (k)

10

0.9 0.8 0.7 0.6

10 Ta = 125C 25C 5 40C

125C

0 0 50 100 150 200

0.5 5 10 15 20 25

0 5 10 15 20

Ta (C)

VB (V)

VB (V)

39

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5003

Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 2ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits

External Dimensions (unit: mm)


12.2 0.2 10.5 0.2 16 9 1.0 0.05
Fin thickness
+0.1

7.5 0.2

Absolute Maximum Ratings


Parameter Power supply voltage Input terminal voltage Input terminal current DG terminal voltage DG terminal current Drain to source voltage Output current Power dissipation Source to drain Di forward current Channel temperature Operating temperature Storage temperature Symbol VB VIN I IN VDG I DG VDS IO PD IF Tch TOP Tstg Ratings 35 0.3 to 7 5 0.3 to 7 5 VB 45 1.8 2 0.8 150 40 to +105 40 to +150 Unit V V mA V mA V A W A C C C Ta=25C Conditions

(Ta=25C)

1 1.27 0.25 0.4 0.05


+0.15

8 2.50.2

0.250.05

+0.15

Block Diagram (for one channel)


VB
Thermal Protect Clamp Bias

IN

Input Logic

Lavel Shifting

Charge Pump

Current Limit

Chopper

DG

Electrical Characteristics
Parameter Operating power supply voltage Quiescent circuit current Output ON resistance Output leak current Input threshold Output ON voltage Output OFF Output ON Inpup current Output OFF Overcurrent protection starting current Internal current limit Thermal shutdown operating temperature Load open detection threshold voltage I IL IS ILim TTSD Vopen TON TOFF DG leak current Low level DG output voltage DG output transfer time
Note:

(VB=14V, Ta=25C unless otherwise specified)

DG Logic

Open/Short Sense

Symbol VB (opr) Iq RDS (ON)

Ratings min 5.5 typ max 35 1 200 300

Unit V mA m m A V V

Conditions
GND OUT

VIN=0V, VOUT=0V IO=1A IO=1A, Ta=80C VOUT=0V Ta= 40 to +105C Ta= 40 to +105C VIN=5V VIN=0V VOUT =VO 1.5V VOUT=0V
C P U 1 VB 7,8 15,16 (2, 3) 9 (10,11)
Vin 1 (7V max) OUT1 OUT2 5V DG1

Standard Connection Diagram

IO, leak VIHth VILth I IH 1.4 1.0

50 2.0 1.8 70

100 3.0

200 12

A A A A C

SPF5003
6 5
Vin 2 (7V max)

Load
Overheat

1.9

3 5

DG2

14 13 4 12
GND

RDG

RIN

1.5

3 70 35

4.5 140 90 20

V s s A V s s
VB VIN

*1
Output transfer time

RL=14, VO= 5V RL=14, VO 10% VDG= 5.5V IDG=1.6mA

IN and RDG are needed to protect CPU and SPF5003 in case of reverse *R connection of VB terminal. * Make VB of 1Pin and 9Pin short from the fin to be plated by solder.

I DG VDGL TPLH TPHL 0.15 70 45

0.5 140 120

*1

Timing Chart
VIN ON VIN OFF
Normal

VO open
Open load

Normal

OCP
Shorted load

RDG

155

165

RIN

Normal Normal

TSD

Normal

1. Transient time is showed Wave Form below.

VOUT

Recommended Operating Conditions (for one channel)


Ratings Parameter Power supply voltage VIH VIL IO RIN RDG 10 10 min 5.5 4 0.3 max 16 5.5 0.9 1 20 20 Unit V V V A k k

Wave Form
IOUT

Internal current limit


TSDON TSDOFF

VIN
DG
High inpidance

VOUT 5V Output transfer time VOUT TON VDG 90% VDG 10% TPLH TPHL TOFF VOUT 10%

Mode Normal

DG output transfer time VDG

Open load Shorted load Overheat

VIN H L H L H L H L

DG H L H H L L L L

VO H L H H L (Limiting) L L L

40

Load

5V

2.0 0.8

+0.2

41

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 2-circuits] SPF5004

Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 2ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits

External Dimensions (unit: mm)


17.280.2 15.580.2 24 13 1.0 0.05
Fin thickness
+0.1

Absolute Maximum Ratings


Parameter Power supply voltage Input terminal voltage Input terminal current DG terminal voltage DG terminal current Drain to source voltage Output current Power dissipation Source to drain Di forward current Channel temperature Operating temperature Storage temperature Symbol VB VIN I IN VDG I DG VDS IO PD IF Tch TOP Tstg Ratings 35 0.3 to 7 5 0.3 to 7 5 VB 45 2.5 2.7 0.8 150 40 to +105 40 to +150 Unit V V mA V mA V A W A C C C Ta=25C Conditions

(Ta=25C)

1 1.270.25 0.4 0.05


+0.15

12 2.50.2

0.250.05

+0.15

a: Part No. b: Lot No.

Block Diagram (for one channel)


VB
Thermal Protect Clamp Bias

IN

Input Logic

Lavel Shifting

Charge Pump

Current Limit

Chopper

Electrical Characteristics
Parameter Operating power supply voltage Quiescent circuit current Output ON resistance Output leak current Output ON Input voltage Output OFF Inpup current Output ON VIL I IH IS ILim TTSD Vopen TON Output transfer time TOFF DG leak current Low level DG output voltage DG output transfer time TPHL 45 I DG VDGL TPLH 0.15 70 60 20 155 2.6 10 165 3 165 1.0 1.8 70 Symbol VB (opr) Iq RDS (ON) 250 IO, leak VIH 50 2.0 3.0 Ratings min 5.5 typ max 35 1 150

DG

(VB=14V, Ta=25C unless otherwise specified)

DG Logic

Open/Short Sense

Unit V mA m m A V V A A A C V s s A V s s VDG =5.5V

Conditions
GND OUT

VIN=0V, VOUT=0V IO =2A IO =1A, Ta=80C VOUT =0V Ta= 40 to +105C Ta= 40 to +105C VIN =5V VOUT =VO 1.5V VOUT =0V
1 VB 2,3 14,15 (4,5,6) 13 (16,17,18)
Vin 1 (7V max) OUT1 OUT2 5V DG1

Standard Connection Diagram

Overcurrent protection starting current Internal current limit Thermal shutdown operating temperature Load open detection threshold voltage

SPF5004
23 Vin 2 11 21 9
GND

24
DG2

Load
Overheat

12
(7V max)

RDG

C P U

RIN

VB of 4Pin, 5Pin, 6Pin, 16Pin, 17Pin and 18Pin short from the fin * Make to be plated by solder.

IDG =1.6mA

Timing Chart
VIN ON VB VIN VIN OFF
Normal

VO open
Open load

Normal

OCP
Shorted load

RDG

RIN

Normal Normal

TSD

Normal

Recommended Operating Conditions (for one channel)


Parameter min Power supply voltage VIH VIL IO RIN RDG 10 10 5.5 4 0.3 Ratings max 16 5.5 0.9 1.15 20 20 V V V A k k Unit

VOUT
Internal current limit
TSDON TSDOFF

IOUT DG

High inpidance

Mode Normal Open load Shorted load Overheat

VIN H L H L H L H L

DG H L H H L L L L

VO H L H H L (Limiting) L L L

42

Load

5V

2.00.8

+0.2

7.50.2

10.50.3

43

High-side Power Switch ICs [With Diagnostic Function, Surface-mount 3-circuits] SPF5007

Features
Built-in diagnostic function to detect short and open circuiting of loads and output status signals DMOS 3ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent and thermal protection circuits

External Dimensions (unit: mm)


17.280.2 15.580.2 24 13 1.0 0.05
Fin thickness
+0.1

Absolute Maximum Ratings


Parameter Power supply voltage Input terminal voltage Input terminal current DG terminal voltage DG terminal current Drain to source voltage Output current Power dissipation Source to drain Di forward current Channel temperature Operating temperature Storage temperature Symbol VB VIN I IN VDG I DG VDS IO PD IF Tch TOP Tstg Ratings 35 0.3 to 7 5 0.3 to 7 5 VB 45 1.8 2.7 0.8 150 40 to +105 40 to +150 Unit V V mA V mA V A W A C C C Conditions

(Ta=25C)

1 1.270.25 0.4 0.05


+0.15

12 2.50.2

0.250.05

+0.15

a: Part No. b: Lot No.

Block Diagram (for one channel)


Ta=25C, all circuit operating
Bias Thermal Protect Clamp

IN

Input Logic

Lavel Shifting

Charge Pump

Current Limit

Chopper

DG

Electrical Characteristics
Parameter Operating power supply voltage Quiescent circuit current Output ON resistance Output leak current Input threshold voltage Output ON Output OFF Output ON Inpup current Output OFF Overcurrent protection starting current Internal current limit Thermal shutdown operating temperature Load open detection threshold voltage Output transfer time TOFF DG leak current Low level DG output voltage DG output transfer time TPHL 45 120 I DG VDGL TPLH 0.15 70 35 90 20 0.5 140 I IL IS ILim TTSD Vopen TON 155 1.5 1.9 3 5 165 3 70 4.5 140 12 Symbol min VB (opr) Iq RDS (ON) 350 IO, leak VIHth VILth I IH 1.4 1.0 50 2.0 1.8 70 200 100 3.0 5.5 Ratings typ max

(VB=14V, Ta=25C unless otherwise specified)

DG Logic

Open/Short Sense

Unit 35 1 200 V mA m m A V V A A A A C V s s A V s s

Conditions
GND OUT

VIN =0V, VOUT =0V IO =1A IO =1A, Ta=80C VOUT =0V Ta= 40 to +105C Ta= 40 to +105C VIN =5V VIN =0V VOUT =VO 1.5V VOUT =0V
GND1 GND2 2 7 GND3 17 IN1 3 IN2 8 IN3 18 1 13 VB OUT1 OUT2 OUT3 5,6 10,11 20,21 5V DG1 DG2 DG3 4 9

Standard Connection Diagram

SPF5007

Load

Load
Overheat

RDG RDG RDG RIN RIN RIN

C P U

RL=14, VOUT =VB 5V RL=14, VB 10% VDG =5.5V IDG =1.6mA

IN and RDG are needed to protect CPU and SPF5007 in case of reverse *R connection of VB terminal. * Make VB of 1Pin and 13Pin short from the fin to be plated by solder.

Timing Chart
VIN ON VB VIN VIN OFF
Normal

VO open
Open load

Normal

OCP
Shorted load

Normal Normal

TSD

Normal

VOUT

Recommended Operating Conditions (for one channel)


Parameter Power supply voltage VIH VIL IO RIN RDG 10 10 Ratings min 5.5 4 0.3 max 16 5.5 0.9 1 20 20
IOUT

Internal current limit


TSDON TSDOFF

Unit
DG
High inpidance

V V V A k k
Mode Normal Open load Shorted load Overheat VIN H L H L H L H L DG H L H H L L L L VO H L H H L (Limiting) L L L

44

Load

19

2.00.8
VB

+0.2

7.50.2

10.50.3

45

High-side Power Switch ICs [Surface-mount 2-circuit, current monitor output function] SPF5017

Features
Internal current sense resistor High accuracy current monitor output (sample & hold function) Built-in overcurrent and thermal protection circuits

External Dimensions (unit: mm)


14.740.2 13.040.2 20 11 1.0 0.05
Fin thickness
+0.1

Parameter
Power supply voltage 1 Power supply voltage 2 Power supply voltage 3 Current sensing voltage Output terminal voltage Input terminal voltage Output current Power dissipation Storage temperature Channel temperature

Symbol
VB Vcc VB Vsense+ Vsense VOUT VPWM VHold IOUT PD Tstg Tch

Ratings
0 to 32 0.5 to 7.0 0 to 40 0.8 to 6 Vsense+Io Rsense 2 to 32 0.5 to 7.0 2.0 2.4 to 5.0 40 to +150 150

Unit
V V V V V V A W C C

Conditions

1 1.270.25
VB terminal, t = 1 min

10 2.50.2 0.4 0.05


+0.15 +0.15

0.250.05

a) Part No. b) Lot No.

Block Diagram (for one channel)


Depends on surface-mount board pattern
1

Vcc

SFP5017
VB
17
clamp

OSC

Charge Pump TSD OCP


Sense MOS

D S

2.00.2
19
CMOS Logic

Absolute Maximum Ratings

(Ta=25C)

Electrical Characteristics
Parameter
Min. operating power supply voltage Operating power supply voltage 1 Operating power supply voltage 2 Quiescent circuit current 1 Quiescent circuit current 2 PWM terminal input voltage PWM terminal input current Hold terminal input voltage Hold terminal input current Output ON resistance

OUT
Sense+

(VB=14V, Ta=25C unless otherwise specified) One circuit equivalent

PWM
2
70k

Symbol
VB min VB VCC Iqvb Iqvcc VPWMH VPWML IPWMH VHoldH VHoldL IHoldH RDSon

Ratings min
6 10 14 5.0 7.2 0.2 3.5 16

typ

max

Unit
V V V mA mA V

Conditions
Hold
3

18
lamp
+
Sense R

Minimum operation of OUT terminal.

70k

20
Sense

*1 *2
Vcc = 5V, VPWM = 0V, One circuit equivalent Vcc = 5V, VPWM = 0V Vcc = 5V Vcc = 5V, VPWM = 5V, Active H * 3

S/H
5
S/H

LG

1.5 70 3.5 V 1.5 70 110 0.14 0.21 0.21 A A C 1.2 0.2 A V V V V mA mA 15 15 100 50 500 650 1 2 70 s s s s s s s s s Io = 0.5A, Vcc = 5V, C1 = 0.033F VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033 F VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033F, Ta = 125C Io = 0.5A, Vcc = 5V Vcc = 5V, VPWM = 5V, Active H * 3 IOUT = 1A IOUT = 1A, Ta = 125C IOUT = 1A IOUT = 1A, Ta = 125C Vcc = 5V 110 A

Standard Connection Diagram


1

VCC

VB

17

Controlling microcomputer CPU

2 3
1k 0.01 F

PWM Hold S/H

SFP5017

OUT Sense+ Sense

19 18 20 D1

5
5.1 k

Current sensing resistance Overcurrent protection starting current Thermal shutdown operating temperature Operation circuit for current monitor output

Rsense 0.25 Is Ttsd Io 3.0 150 0.2

C
4 C1

LG
6 D2

*4 *1
Io = 0A, Vcc = 5V Io = 0.2A, Vcc = 5V Io = 0.5A, Vcc = 5V, Ta = 40 to 140C Io = 1.2A, Vcc = 5V, Ta = 40 to 140C Io = 1A, Vcc = 5V, VSH = 0V Io = 1A, Vcc = 5V, VSH = 5V
VPWM

* Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (0.8V)

Current monitor output voltage

VSH

0.488 1.219 2.925

0.500 1.250 3.000

0.512 1.281 3.075 5

Timing Chart
Ordinary operation (auto hold) Thermal protection Ordinary operation (external hold) Overcurrent protection Ordinary operation (auto hold)

Current monitor output current

ISH 6 t on t off

Output transfer time Output rise time Output fall time Current monitor output hold time Current monitor output delay time Hold time after inputting hold

Vout

tr tf t sh t shd t shh

Icoil VS/H

*1
500 to 650 usec

*1
500 to 650 usec

*2

VHold

Truth table VPWM VOUT L L H H

S/H settling time

t stt 80

Note: * 1: Accuracy warranty range for current monitor output * 2: Equivalent errors are not included in current monitor output accuracy. * 3: With built-in pull-down resistance (70k typ) * 4: Self-excitation and oscillation type * 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.

46

10.50.3

7.50.2

47

High-side Power Switch ICs [Surface-mount, current monitor output function] SPF5018

Features
Internal current sense resistor High accuracy current monitor output (sample & hold function) Built-in overcurrent and thermal protection circuits

External Dimensions (unit: mm)


12.20.2 10.50.2 16 9 1.0 0.05
Fin thickness
+0.1

Absolute Maximum Ratings


Parameter
Power supply voltage 1 Power supply voltage 2 Power supply voltage 3 Current sensing voltage Output terminal voltage Input terminal voltage Output current Power dissipation Storage temperature Channel temperature

Symbol
VB Vcc VB Vsense+ Vsense VOUT VPWM VHold IOUT PD Tstg Tch

Ratings
0 to 32 0.5 to 7.0 0 to 40 0.8 to 6 Vsense+Io Rsense 2 to 32 0.5 to 7.0 2.0 2.0 40 to +150 150

Unit
V V V V V V A W C C

Conditions

1 1.270.25
VB terminal, t = 1 min

8 2.50.2 0.4 0.05


+0.15 +0.15

0.250.05

Block Diagram (for one channel)


Depends on surface-mount board pattern
Vcc
2

11
clamp

OSC

Charge Pump TSD OCP


Sense MOS

D S

Electrical Characteristics
Parameter
Min. operating power supply voltage Operating power supply voltage 1 Operating power supply voltage 2 Quiescent circuit current 1 Quiescent circuit current 2 PWM terminal input voltage PWM terminal input current Hold terminal input voltage Hold terminal input current Output ON resistance

OUT
14
Sense+

(VB=14V, Ta=25C unless otherwise specified)

PWM
3
70k

Symbol
VB min VB VCC Iqvb Iqvcc VPWMH VPWML IPWMH VHoldH VHoldL IHoldH RDSon

Ratings min
6 10 14 5.0 7.2 0.2 3.5 16

typ

max

Unit
V V V mA mA V

Conditions
Minimum operation of OUT terminal.

CMOS Logic

13
lamp
+
Sense R

Hold
4
70k

15
Sense

*1 *2
Vcc = 5V, VPWM = 0V Vcc = 5V, VPWM = 0V Vcc = 5V Vcc = 5V, VPWM = 5V, Active H Vcc = 5V Vcc = 5V, VPWM = 5V, Active H * 3 IOUT = 1A IOUT = 1A, Ta = 125C IOUT = 1A IOUT = 1A, Ta = 125C

S/H
6
S/H

LG

1.5 70 3.5 V 1.5 70 110 0.14 0.21 0.21 A A C 1.2 0.2 A V V V V mA mA 15 15 100 50 500 650 1 2 70 s s s s s s s s s Io = 0.5A, Vcc = 5V, C1 = 0.033F VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033 F VB = 11V, Vcc = 5V, Io = 1.2A, C1 = 0.033F, Ta = 125C Io = 0.5A, Vcc = 5V 110 A

Standard Connection Diagram


*3
2

VCC

11

VB

Controlling microcomputer CPU

3 4
1k 0.01 F

PWM Hold S/H

SFP5018

OUT Sense+ Sense

14 13 15 D1

6
5.1 k

Current sensing resistance Overcurrent protection starting current Thermal shutdown operating temperature Operation circuit for current monitor output

Rsense 0.25 Is Ttsd Io 3.0 150 0.2

C
5
C1

LG
7 D2

*4 *1
Io = 0A, Vcc = 5V Io = 0.2A, Vcc = 5V Io = 0.5A, Vcc = 5V, Ta = 40 to 140C Io = 1.2A, Vcc = 5V, Ta = 40 to 140C Io = 1A, Vcc = 5V, VSH = 0V Io = 1A, Vcc = 5V, VSH = 5V
VPWM

* Use a Schottky Di for D2 when the Sense+ terminal is lower than the abs. max. rated voltage (0.8V)

Current monitor output voltage

VSH

0.488 1.219 2.925

0.500 1.250 3.000

0.512 1.281 3.075 5

Timing Chart
Ordinary operation (auto hold) Thermal protection Ordinary operation (external hold) Overcurrent protection Ordinary operation (auto hold)

Current monitor output current

ISH 6 t on t off

Output transfer time Output rise time Output fall time Current monitor output hold time Current monitor output delay time Hold time after inputting hold

Vout

tr tf t sh t shd t shh

Icoil VS/H

*1
500 to 650 usec

*1
500 to 650 usec

*2

VHold

Truth table VPWM VOUT L L H H

S/H settling time

t stt 80

Note: * 1: Accuracy warranty range for current monitor output * 2: Equivalent errors are not included in current monitor output accuracy. * 3: With built-in pull-down resistance (70k typ) * 4: Self-excitation and oscillation type * 5: Accuracy of current monitor output is affected by the materials of the hold capacitor (C1). The capacitor C1 must be of low dielectric absorption and have good bias and leak current characteristics.

48

2.0 0.8
VB

+0.2

(Ta=25C)

7.50.2

49

Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A

Features
DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent, overvoltage and thermal protection circuits

External Dimensions (unit: mm)


12.2 0.2 10.5 0.2 16 9 1.0 0.05
Fin thickness
+0.1

(Ta=25C)

Parameter Power supply voltage Output terminal voltage Input terminal voltage Output current Power Dissipation Storage temperature Channel temperature Output avalanche capability

Symbol VB VOUT VIN IO PD Tstg Tch EAV

Ratings 40 37 0.5 to +7.5 1.8 2 40 to +150 150 50

Unit V V V A W C C mJ

Conditions

7.5 0.2

Absolute Maximum Ratings

1 1.270.25 0.4 0.05


+0.15

8 2.5 0.2

0.25 0.05

+0.15

Single pulse

Note: * At the clamping operation, refer to VOUT (clamp) in the section of electrical characteristics.

Equivalent Circuit Diagram


VB VOUT 1

Gate Protction

Electrical Characteristics
Parameter Power supply voltage Quiescent circuit current Operating circuit current Hi output Input voltage Lo output Hi output Input current Lo output Output ON resistance Output clamp voltage Output leak current Forward voltage of output stage diode Overvoltage protection starting voltage Thermal protection starting temperature Overcurrent protection starting current Output transfer time TOFF Output rise time Output fall time Tr Tf 8 5 10 I IN 0.4 RDS (ON) 0.5 VOUT (clamp) I OH VF 41 50 0.7 55 10 1.6 30 0.6 VIN I IN 0.5 1.5 50 Symbol VBopr Iq ICC VIN 3.5 Ratings min 5.5 5 8 typ max 25 7 12 5.5

Reg. REF

(VB =14V, Ta=25C unless otherwise specified)


OVP Gate Driver

Unit V

Conditions

TSD OCP
P-GND VIN 1

mA mA V V A A V A V

VIN = 0V (all inputs) VIN = 5V (all inputs) IO = 1A


VIN 2

250 k typ

VOUT 2

VIN = 5V VIN = 0V

VIN 3

VOUT 3

VIN 4

VOUT 4

VB = 5.5V IO = 1A VO = 37V I F = 0.5A

L-GND

Circuit Example

VB (ovp)

25

40

V
VCC 2 10 7 15 5 VB

TTSD

151

165

IS TON

1.1 12

A s s s s RL = 14, I O = 1A RL = 14, I O = 1A RL = 14, I O = 1A RL = 14, I O = 1A

4 6 12 14 CONTROL UNIT IN1 IN2 IN3 IN4

OUT1 OUT3

OUT2 OUT4

SPF5002A
L-GND 13 P-GND 1,9

Truth table VIN VO


H L L H

Use L-GND and P-GND being connected.

Timing Chart
OVP

VB VOUT

VIN
Normal Overvoltage Overheat Overcurrent

50

* Self-excited frequency is used in the overcurrent protection.

2.0 0.8

+0.2

Low-side Switch ICs [Surface-mount 4-circuits] SPF5002A

Electrical Characteristics
Quiescent Circuit Current
10

Circuit Current (single circuit)


10

Circuit Current (4 circuits)


10

Ta = 25C

Ta = 25C Ta = 40C

Ta = 25C Ta = 40C

Iq (mA)

Id (mA)

Id (mA)

Ta = 40C

Ta = 125C
4

Ta = 120C
2

Ta = 125C

10

20

30

40

10

20

30

40

10

20

30

40

VB (V)

VB (V)

VB (V)

Threshold Input Voltage


15

Output ON Voltage
1.0

Forward Voltage of Output Stage Diode


1.5

VB = 14V Ta = 40C Ta = 25C Ta = 125C


0.8 1.0

10

Ta = 125C Ta = 25C Ta = 40C

VDS (ON) (V)

VO (V)

Ta = 25C
0.4

I F (A)
0.5

0.6

Ta = 125C

5 VO = 14V IO = 0.1A 0 0 1 2 3

0.2

Ta = 40C
0 0 0.5 1.0 1.5 2.0 0 0 0.5 1.0 1.5

VIN (th) (V)

IO (A)

VF (V)

Overcurrent Protection Characteristics


15

Overvoltage Protection Starting Voltage


15 IO = 0.1A

VB =14V

10

10

VO (V)

VO (V)

Ta = 40C Ta = 25C Ta = 125C

Ta = 120C Ta = 25C Ta = 40C


0 0 1.0 2.0 0 0 10 20 30 40

IO (A)

VB (V)

51

Low-side Switch ICs [Surface-mount 4-circuits] SPF5009 (under development)

Features
DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in over current and thermal protection circuit and diagnostic function to detect open load Built-in output status signals (over current, over heat and open load)

External Dimensions (unit: mm)


17.28 0.2 15.58 0.2 24 13 1.0 0.05
Fin thickness
+0.1

Absolute Maximum Ratings


Parameter Power supply voltage Output terminal voltage (DC) Output terminal voltage (pulse) Output current (DC) Output current (pulse) Input terminal voltage Diag output source current Diag output voltage Power Dissipation Storage temperature Channel temperature Output avalanche capability Symbol VB VOUT VOUT IOUT IOUT V( IN, SEL, B/U) VDIAG I DIAG PD Tstg Tch EAV Ratings 40 50 Output clamping (max 70V) 2.9 Over current protection starting current 0.5 to +6.5 6.5 5 2.8 40 to +150 150 80 Unit V V V A A V V mA W C C mJ Single pulse Conditions

(Ta=25C)

1 1.27 0.25 0.4 0.05


+0.15

12 2.5 0.2

0.250.05

+0.15

a : Part No. b: Lot No.

Equivalent Circuit Diagram


VB (7) Ref Reg Gate driver VIN B/U (17) TSD VIN SEL (5) Set OUT OCP Latch Reset VIN 1 (6) OSC Monitor VOUT SENSE Gate Protection VOUT1 (4)

Electrical Characteristics
Parameter Power supply voltage Quiescent circuit current Operating circuit current Input voltage (1 to 4, SEL, B/U) Input current (single circuit) (1 to 4, SEL, B/U) Output ON resistance Output clamp voltage Output leak current Forward voltage of output stage diode Output moniter threshold voltage DIAG output voltage VDIAG (L) DIAG output leak current Thermal shutdown operating temperature Overcurrent protection starting current Output transfer time TOFF Output rise time Output fall time DIAG output transfer time t DOFF 8 Tr Tf t DON 8 5 10 12 I DH TTSD IS TON 151 3.0 12 165 0.5 10 Symbol VB (opr) Iq Id VIN (H) VIN (L) I IN (H) I IN (L) RDS (ON) VOUT (clamp) I OH VF Vt hM VDIAG (H) 6.4 60 65 3.5 0.5 Ratings min 5.5 9 12 typ max 40 12 15 6.5 1.5 200 30 0.18 70 50 1.5 2 6.5

VOUT2 (9)

(VB =14V, Ta = 25C unless otherwise specified)

VIN 2 (8)

Unit V mA mA V V A A V A V V V V A C A s s s s s s

Conditions

VOUT3 (16) VIN 3 (18) P-GND3 (13, 14) VDIAG3 (15) VOUT4 (21) VIN 4 (20) P-GND4 (23, 24) VDIAG4 (22) L-GND (19)

VB =14V, VIN=0V VB =14V, VIN=5V (all inputs) VB =14V, VO=1A VB =14V VB =14V, VIN=5V VB =14V, VIN=0V VB =14V, IO=1A VB =14V, IO=1A VB =14V, VO=50V I F =1A VB =14V VB =14V, VDIAG=6.5V VB =14V, IDIAG=5mA VB =14V, VDIAG=6.5V VB =14V VB =14V VB =14V, RL=14, I O=1A VB =14V, RL=14, I O=1A VB =14V, RL=14, I O=1A VB =14V, RL=14, I O=1A VB =14V, RL=14, I O=1A VB =14V, RL=14, I O=1A

Circuit Example

7
6 8 18 20 17 5

16

21

VB VIN1 VIN2 VIN3 VIN4 VINB/U VINSEL LG


19

OUT1

OUT2

OUT3

OUT4 DIAG1 DIAG2 DIAG3 DIAG4 PG4


23, 24
3 10 15 22

SPF5009
PG1
1, 2

PG2
11, 12

PG3
13, 14

Timing Chart
Main input signal 1 VIN1 Main input signal 2 VIN2 Backup input signal VINB/U Input select signal VINSEL Power supply voltage VB Output voltage 1 VOUT1 Output current 1 IOUT1 DIAG output 1 VDIAG1 DIAG output 2 VDIAG2 Nomal

OCP

OCP

Output 1 Output 1 Output 1 Overheat Over current Open load Main mode

Nomal

Output 1 Output 1 Output 1 Overheat Over current Open load Backup mode

52

2.00.8

+0.2

P-GND1 (1, 2) VDIAG1 (3)

P-GND2 (11, 12) VDIAG2 (10)

10.5 0.3

7.5 0.2

53

Low-side Switch ICs [Surface-mount 4-circuits with Output Monitor] SPF5012

Features
Output monitor circuit (DIAG) DMOS 4ch output Allows ON/OFF using C-MOS logic level Built-in overcurrent, overvoltage and thermal protection circuits

External Dimensions (unit: mm)


17.28 0.2 15.58 0.2 24 13 1.0 0.05
Fin thickness
+0.1

Absolute Maximum Ratings


Parameter Power supply voltage 1 Power supply voltage 2 Output voltage Logic input voltage Output current Diag output voltage Power Dissipation Storage temperature Channel temperature Output avalanche capability Symbol VB VCC VO VIN IO VDIAG PD Tstg Tch EAV Ratings 40 7.5 40 (DC) 0.5 to +7.5 Self Limited 0 to VCC 2.8 to 5 40 to +150 150 100 Unit V V V V A V W C C mJ Single pulse Conditions

(Ta=25C)

1 1.27 0.25 0.4 0.05


+0.15

12 2.5 0.2

2 0.2

0.250.05

+0.15

*1
a : Part No. b: Lot No.

*2

Equivalent Circuit Diagram


VCC1-2 (7) Diag1 (5) VB (19) Reg OVP TSD VIN1 (4) Gate driver OCP

Gate Protection VOUT1 (3)

* 1. At the clamping operation, refer to the section of VOUT (clamp) in electrical characteristics * 2. Changes by the patern of mounted substrate

Ch1

P. GND1 (1, 2)

Electrical Characteristics
Parameter Operating power supply voltage 1 Operating power supply voltage 2 Quiescent circuit current Operating circuit current Hi output Input voltage Lo output Hi output Input current Lo output Output ON resistance Output clamp voltage I IN RDS (ON) 0.2 VOUT (clamp) 45 50 55 2.8 Output leak current I OH 900 Forward voltage of output stage diode Overvoltage protection starting voltage VF VB (ovp) 25 8 151 6 Overcurrent protection operating current IS 6 5 TON Output transfer time TOFF Output rise time Output fall time Output-diag voltage ratio Diag output clamping voltage Tr Tf ra (DIAG) VDIAG (clamp) 0.195 0.2 8 5 10 0.205 4.85 12 165 1.6 40 30 0.3 VIN I IN 0.5 1.5 50 Symbol VB (opr) VCC (opr) Iq Id VIN 3.5 Ratings min 5.5 4.5 4 8 typ max 40 5.5 6 12 5.5

(VB =14V, Ta = 25C unless otherwise specified)

Unit V V mA mA V V A A V mA A V V V C A A A s s s s VB =14V

Conditions

VIN2 (9)

Ch2

Diag2 (8) VOUT2 (10) P. GND2 (11, 12) VCC3-4 (18) Diag3 (17) VOUT3 (15) P. GND3 (13, 14)

VB =14V, VIN=0V VB =14V, VIN=5V VB =14V, VO=1A VB =14V VB =14V, VIN=5V VB =14V, IO 1A VB =14V, IO=1A, Ta=125C VB =14V, IO=1A, Ta=25C VB =14V, IO=1A VB =14V, VCC=5V, VIN=0V, VO =40V, Ta=25C VB =14V, VCC =5V, VIN=0V, VO =14V, Ta=25C I F=1A

VIN3 (16)

Ch3

VIN4 (21)

Ch4
L. GND (6)

Diag4 (20) VOUT4 (22) P. GND4 (23, 24)

Circuit Example

18

19

10

15

22

VCC1-2 VCC3-4 VB VCC


4 9 16 21

VOUT1 VOUT2 VOUT3 VOUT4 Diag1 Diag2 Diag3 Diag4


5 8 17 20

Input signal

VIN1 VIN2 VIN3 VIN4 L-GND


6

SPF5012
1, 2 11,12 13,14

Diag output

Overvoltage protection hysteresis voltage VB (ovphys) Thermal shutdown operating temperature TTSD

P-GND1 P-GND2 P-GND3 P-GND4


23,24

VB =14V, Ta=40C VB =14V, Ta=25C VB =14V, Ta=125C

Truth table VIN VO


H L L H

Short L-GND and P-GND in a pattern near the product.

VB=14V, RL=14, I O=1A

VB =14V, VO =1 to 14V, Rdiag=500k V VB=14V, VCC=5V, VO =40V

Timing Chart
OVP

VB VOUT

VIN
Normal Overvoltage Overheat Overcurrent

54

* Self-excited frequency is used in the overcurrent protection.

10.5 0.3

7.5 0.2

55

Stepper-motor Driver ICs SLA4708M

Features
High output breakdown voltage of 50V Affluent output current of 1.5A Built-in overcurrent, overvoltage and thermal protection circuits Low standby current of 50A

External Dimensions (unit: mm)


31.00.2 3.20.15 24.40.2 16.4
0.2

Ellipse 3.20.15 3.8 4.80.2 1.70.7 Lead plate thickness resins 0.8 max 12

16.00.2

13.00.2

8.5max

9.90.2

a b

2.7

Parameter Power supply voltage Breakdown voltage Input voltage Output current Diagnostic output sink current Diagnostic output withstand voltage Operating temperature Storage temperature Power Dissipation

Symbol VS VO VIN IO, AVE IDIAG IDIAG. H Top Tstg PD

Ratings 35 50 0.3 to +7 1.5 10 7 40 to +85 40 to +150 3.5 (Ta=25C)

Unit V V V A mA V C C W

Conditions

9.5min (10.4)

Absolute Maximum Ratings

(Ta=25C)

Pin 1 1.20.15 11P2.54 0.85 0.1 1.45


0.7 +0.2 0.15 1.0

0.55 0.1

+0.2

2.20.7

=27.94

31.5 max

1 2 3 4 5 6 7 8 9 10 11 12

a: Part No. b: Lot No.

Without heatsink

Standard Circuit Diagram Electrical Characteristics


Parameter Input voltage (I A/A, I B/B standby) Input current Symbol VIL VIH I IL I IH VO.STA Output saturation voltage Output leak current Overcurrent detection Overvoltage detection Saturation voltage of diagnostic output Standby current VO.STA I O.LEAK I SD VSD VDIAG.L I STB 50 1.8 27.5 0.3 2.4 0.8 50 1.3 1.5 100 Ratings min typ max 0.8 Unit V V mA A V V A A V V A I DIAG = 5mA VS = 12V VIN = 0.4V VIN = 2.4V
5V 2 STBY P-GND 6 L-GND 11 L-GND 7 N.C. 4 OUTA 5 OUT A 9 OUT B 8 1 OUT B VS 12 DIAG 3 I
A /A

(VS =12V, Ta=25C)


C + ZD

Conditions

SLA4708M

I B/B 10

CPU

ZD: VS <35V C 100F (Reference)

I O = 1A, Ta = 25C I O = 1.5A, Ta = 25C VO = 16V

4.7 k

Stepper motor

56

Stepper-motor Driver ICs SLA4708M

Electrical Characteristics
Power Supply Current Characteristics
200 20

Overvoltage Protection Characteristics


14

Saturation Voltage of Output Transistor Characteristics


Saturation voltage of output transistor Vsat (V)

2.0

Constant (ST = 5V)


12
Output voltage VO (V) Power supply current At Constant IS (mA) At standby IS (A)

Ta = 25C Vcc=12V Common for all phases

Vcc (Vs) =16V Ta =25C


1.5

Common for all phases

10 8 6 4 2

100

10

1.0

At standby (ST = 0V)

0.5 0

0 0

10

20

30

0 0 10 20 30 35
Power supply voltage VS (V)

1.0

2.0

3.0

Power supply voltage VS (V)

Output current IO (A)

Thermal Protection Characteristics


14 12
Output voltage VO (V)

Vcc (Vs) =12V VST = 5V

10 8

T j2
6 4 2 0 0 110 120 130 140 150

T j1

160

Junction temperature Tj (C)

57

2-ph Stepper-motor Driver ICs SPF7211

Features
Low output saturation voltage (high-side: 1.5V max.; low-side: 0.8V max.) Built-in recovery diode Built-in standby function Built-in overcurrent and thermal protection circuits and low voltage input shutoff function Built-in overload and disconnection detection function

External Dimensions (unit: mm)


17.280.2 15.580.2 24 13 1.0 0.05
Fin thickness
+0.1

Parameter Main power supply voltage Input voltage


Output current Flag terminal withstand voltage Flag terminal current Detect voltage Power dissipation Junction temperature Operating temperature Storage temperature

Symbol VBB VIN Io IoPeak VFlag IFlag VRs


PD Tj Top Tstg

Ratings 40 0.3 to 15 0.8 1.0 7 3 2 to 2 4.1 39 150 40 to 110 40 to 150

Unit V V
A V mA V W C C C

Remarks
VIN VBB

1 1.270.25 0.4 0.05


+0.15

12 2.50.2

20.2

Absolute Maximum Ratings

Tw 1mS VFlag VBB For Ta = 25C * 1 For Tc (Ttab) = 25C

0.25 0.05

+0.15

a) Part No. b) Lot No.

Note: *1: With glass epoxy + copper foil board (size 5.07.4cm; t: glass epoxy = 1.6mm /copper foil = 18 m)

Recommended Operation Range


Parameter Main power supply voltage Input voltage Output current Flag terminal withstand voltage Flag terminal current Detect voltage Operating temperature

Standard Circuit Diagram


Ratings 6 to 18 0.3 to 7.0 0.5 0 to 7.0 0 to 1.0 1 to 1 40 to 110 Unit V V A V mA V C Remarks
VIN VBB Continuous VFlag VBB
PC (ECU)
Rs

Electrical Characteristics
Parameter
Main power supply current Low voltage protection operation voltage UVLO hysteresis voltage Output leak current

Symbol
IBB IBBS VUVLO VUVLOhys IoleakL IoleakH VsatL

min

Ratings typ

3.5 0.5 100

max 50 50 4.5

Unit
mA A V V A A V V V V V V V V V V A A A A mV mV mV kHz kHz V V A A V V V V mV A V mA S S Hz S S S S S S S S S S S S S C C C C

Conditions
In ordinary operation (no load) At sleep

Ct 2200pF

Output saturation voltage VsatH Recovery diode forward voltage Input voltage Hysteresis voltage Ph terminal Input current V FL V FH VFGO VIL VIH VIhys IIL IIH IIL IIH VRs Fosc FPWM VctL VctH Ictsink Ictsouce VocpL VocpH VocpL VocpH Vopen IleakFlag VFlagL IFlag Tpw Tpws Fclock Pulse tocp1 tocp2 tocp3 topen1 topen2 tonH1 toffH1 tonH2 toffH2 tonL1 toffL1 tonL2 toffL2 Tj Tj Talarm Talarm

100 0.5 0.8 1.2 1.5 1.2 1.3 1.2 0.8 2.0 0.5 5 5 30 660 420 40 28.8 14.4 700 450 70 48 24 0.5 1.5 720 120 3.0 VBB2.0 5 5 50 740 480 90 72 36

VBB = 40V, Vo = 0V VBB = Vo = 40V Io = 0.5A Io = 0.8A Io = 0.5A Io = 0.8A Io = 0.5A Io = 0.5A Io = 0.5A

2-phase excitation
Clock Ph1 I10, I11 Ph2 I20, I21 0 L H L H

Excitation Signal Time Chart


1 H H L H 2 H H H H 3 L H H H 0 L H L H 1 H H L H

1 to 2-phase excitation
Clock Ph1 I10, I11 Ph2 I20, I21 0 L H L H 1 H L L H 2 H H L H 3 H H H L 4 H H H H 5 L L H H 6 L H H H 7 L H L L 0 L H L H 1 H L L H 2 H H L H 3 H H H L

Input terminal

Ixx, Set terminals Input current Detect voltage Oscillation frequency PWM frequency Ct terminal threshold voltage Ct terminal current

VIL = 0.8V VIH = 2.0V Ix0 = High, Ix1 = High Ix0 = Low, Ix1 = High Ix0 = High, Ix1 = Low Ct = 2200pF 20% Ct = 2200pF 20%

* For the 1 to 2-phase excitation application, switch the Ph signal in the step of 1-ph excitation (Ixx turns from high to low). The OPEN detection function is invalid except in this sequence.

*1
Out voltage Out voltage VBB = 5.5V VBB = 5.5V Sence voltage VFlag = 7V IFlag = 1mA In ordinary operation At sleep Ct = 2200pF In ordinary operation; Ct = 2200pF At switching the phase When Ixx shifts from L to H In ordinary operation When Ixx shifts from L to H

Overcurrent detection voltage Open detection voltage Flag terminal leak current Flag terminal saturation voltage Flag terminal current Response pulse width Set terminal Pulse rate Pulse number Flag response time OCP operation Open operation

1.5 VBB2.5 1.0 VBB2.3

4.2 VBB1.7 1.85 VBB1.5 10 0.5 3

60

10 100 17 2.5 5.0 5.0 2.5 2.5

24 256 5.0 10.0 10.0 5.0 5.0 1.5 1.5

31 10.0 20.0 20.0 10.0 10.0

I/O propagation time

100 100 2.0 0.5 100 100 150 120 20 130 20 140

Thermal protection temperature Thermal protection hysteresis Thermal alarm temperature Thermal alarm hysteresis

*2

58

Note: *1: The Ct terminal threshold voltage and current are the design values. Warranty is based on the oscillation frequency. *2: Thermal protection and alarm temperatures are design values.

I11 Ph1 Ct Set GND GND GND Out1A Rs1 VBB 12 Out1B

Symbol VBB VIN Io VFlag IFlag VRs Top

I20 24 I21 Ph2 FL1 GND GND GND GND Out2A Rs2 FL2 Out2B 13

SPM
1 I10

Rs VBB = 6 to 18V +
Rs 1 typ (1 to 2W) IoM VRs/Rs

10.50.3

7.50.2

2-ph Stepper-motor Driver ICs SPF7211

Electrical Characteristics
Vsat Temperature Characteristics (Io=0.5A)
1.2 1 0.8 0.6 0.4 0.2 0 30 10 10 VsatL VsatH
Forward voltage VF (V)

Diode VF Characteristics (IF=0.5A)


1.7 VFGO 1.5 1.3 1.1 0.9 0.7 0.5 30 10 10 VFH VFL

Saturation voltage Vsat (V)

30 50

70 90 110 130 150

30 50

70 90 110 130 150

Junction temperature (C)

Junction temperature (C)

OSC Temperature Characteristics


55
Oscillation frequency FOSC (kHz)

Ta-PD Characteristics
40 Infinite heatsink equivalent (Tc=25C) j-tab 3.2C/W
Power dissipation PD (W)

53 FOSC 51

30

20

49

47 Ct=2200pF 45 30 10 10 30 50 70 90 110 130 150

10 Copper foil area (5.07.4mm, t=18m) j-a 30.5C/W 0

25

50

75

100

125

150

Junction temperature (C)

Ambient temperature Ta (C)

59

Full Bridge PWM Control DC Motor Driver ICs SI-5300

Features
P-ch MOS for high side and N-ch MOS for low side in one package Enable to drive DC5V Possible to drive a motor at the LS-TTL, C-MOS Logic level Guarantee Tj=Tch=150C Built-in over current protection and thermal shut down circuits Built-in diagnosis function to monitor and signal the state of each protection circuits Built-in vertical current prevention circuits (Dead time is defined internally.) No insulator required for Sanken's original package (SPM package)

External Dimensions (unit: mm)


(28.4) 4.80.2

2.70.2

a
(4.5)

16.10.2

(R0.8) (4) R-end 7.60.5

(R0.8) 0.750.1
+0.2

14 P2.030.1=(28.42)

0.450.1

+0.2

Absolute Maximum Ratings


Parameter Motor supply voltage Symbol VM IN1 Input terminal voltage IN2 PWM IO Output current IO (p-p) PWM control frequency Forward reverse rotation switch frequency* Operating temperature Junction and channel temperature Storage temperature Thermal resistance j-a PD1 Power dissipation PD2 33.7 W With infinite heatsink 35 3.6 C/W fPWM fCW TOP Tj, Tch Tstg j-c Ratings 40 0.3 to 7 0.3 to 7 0.3 to 7 5 17 20 500 40 to +85 40 to +150 40 to +150 3.7 Unit V Conditions

(Ta=25C)

350.3

20.5 4.50.7

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

a: Part No. b: Lot No.

V V V A A kHz Hz C C
IN1
Dead Time Nch1 PWM down edge sense A OCP B Dead Time OCP B

Equivalent Circuit
VM VM
B

VM
B OCP Pch1 Pch2

PW

1ms, Duty

50%
Pre-Rec OCP

Duty=20% to 80%
TSD

B A Q R

A FF S B

OUT1

OUT2
Nch2 A

PULL-UP Resistor

C C/W
PWM

DIAG CONTROL

TDIAG
CDIAG 1F

IN2

Without heatsink

A A

LGND PGND PGND

Note: * The dead time for the length current prevention in positive and the reversing switch is set by internal control IC. The set point in internal IC at the dead time is 20s (typical). Please take into account the dead time and consider the load conditions when you use the IC.

Standard Connection Diagram


Relay Capacitor 220F Battery

Electrical Characteristics
Parameter
Motor supply voltage Output saturation voltage

(Unless, otherwise specified, Tj=Tch=25C, VM =14V, IO =3A)

Symbol
VIN V, VM-VO V, VO-PG I L, L I L, H tpLH

Ratings
min 6 typ max 18 0.8 0.3 100 100 10 2

Unit
V V V A A s s s V V V V mA mA mA V IO=3A IO=10A IO=3A IO=10A

Conditions
VM=24V (2 min.) IO=3A IO=3A VM=40V VM=40V VPWM: L VPWM: H H (Vth=2.5V typ) L (Vth=2.5V typ)
Pull-up Resistor 10k (Open Collector) VCC CPU 7 PWM 10 DIAG 6 IN1 11 IN2

3, 5, 13 VM 1, 2 OUT1

14, 15 OUT2

3.60.5
ECU inside VCC

DIAG

SI-5300
8 LGND Delay Capacitor 1F 4,12 PGND

Output leakage current

Output transmission time

tpHL tpHL-tpLH

* 15 *3
10 0.8 1.0 0.8 1.0 22 22 16 3.0 2.0 100 200 16 20 0.3

9 TDIAG

Forward voltage characteristic of diode between drain and source

VF L

VF H IM1

Timing Chart
Forward Duty ON Therminal name IN1 IN2 PWM High inpidance OUT1 High inpidance OUT2 GND IOUT (A) High inpidance Forward Duty OFF Reverse Duty ON Reverse Duty OFF Stop (Free Run) Stop (Free Run) Breake Breake

Stop mode Forward and reverse mode Brake mode VIN1=VIN2=VPWM VIN1=VIN2=VPWM VIN1=VIN2=VPWM=0V VIN1=VIN2=VPWM=5V 1

Static circuit current

IM2 IM3

Input terminal voltage

VIN, H VIN, L

V A A A ms V

Input terminal current OPC start current DIAG output pulse width DIAG terminal voltage

IIN, L IIN, H IOCP t DIAG VD L

C=1F (typ) ID SINK=1mA

*4
VM=2V VM IN1 IN2 PWM VM-OUT1 (Pch1 VDS) VM-OUT2 (Pch2 VDS) VOUT1-GND (Nch1 VDS) VOUT2-GND (Nch2 VDS) OUT1 OUT2

Protection circuit

Return to constant action VM=2V

Note: *1: The standard value of IOCP is assumed to be a value by which the output of each Power MOS FET cuts off. When the protection circuit of OCP and TSD operates, Power MOS FETs keeps cutoff. When a signal (5V: H 0V: L) is input to the terminal PWM, the cutoff operation will be released. Moreover, three minutes (Ta=25C, fPWM=10kHz, VM=14V) are assumed to be max at the overcurrent state continuance time in the VM operation and the ground of output terminal (OUT1, OUT2). It is not the one to assure the operation including reliability in the state that the short-circuit continues for a long time.

*2: Output transmission time (tpLH)


VPWM (5V)

*3: Output transmission time (tpHL)


VPWM (5V)

PWM terminal
Vth VOUT GND VOUT*0.9

OUT terminal
GND tpLH

Output transmission time tpLH is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.9) of the output terminal.

PWM terminal

Vth GND

OUT terminal
VOUT *0.1 tpHL GND

Output transmission time tpHL is time from Vth (2.5V typ) of the terminal of PWM to output (VOUT *0.1) of the output terminal.

*4: DIAG signal output terminal is an open collector output. Use a pull-up resistor when connecting it to a logic circuit.

IOUT (A) TDIAG DIAG DIAG Threminal VCC=5V Pull-up 20ms (min)

60

Full Bridge PWM Control DC Motor Driver ICs SI-5300

Electrical Characteristics
Output saturation voltage (Pch)
1.0
VM=14V

Output saturation voltage (Nch)


0.5
VM=14V

Forward voltage of Diode between drain and source


12
Ta=25C

0.8 Ta=150C Ta=85C Ta=25C 0.4 Ta=40C

0.4

10

Ta=150C
I FSD (A)

0.6

VVO -PG (V)

VVM -VO (V)

0.3

Ta=85C Ta=25C Ta=40C

8 6 4

Nch MOS FET

0.2

Pch MOS FET

0.2

0.1

2 0

4
I O (A)

3
I O (A)

0.2

0.4

0.6
VFSD (V)

0.8

1.0

1.2

Quiescent circuit current


25 Duty on 20 Brake Duty off
I M (mA)

Voltage of input terminal (Threshold voltage)


16
VM=14V

Current of input terminal (SINK current)


0.6
VM=14V

0.5 12 0.4
VO (V)

Ta=150C Ta=85C Ta=25C Ta=40C

Stop

Ta=150C 8 Ta=25C Ta=40C 4

I SINK (mA)

15

0.3 0.2

10

5
I O=0A Ta=25C

0.1

10

20
VM (V)

30

40

0 0 1 2 3 4 5 6 7
VIN1, IN2, PWM (V)

0 0 1 2 3 4 5 6 7
VIN1, IN2, PWM (V)

Current of input terminal (Source current)


12
I IN1=I IN2=PWM=0V

VTDIAG VDIAG Characteristics


6
VM=14V

Pull-up resistance =3k

Thermal shut down protection


6
VM=10V I O=0A

10
IIN1, IIN2, PWM source (A)

Ta=150C Ta=25C Ta=40C


VDIAG (V)

5 4 3 2 1 0 Ta=150C Ta=25C Ta=40C

5 4
VDIAG (V)

8 6 4 2 0

3 2 1 0 100

10

20
VM (V)

30

40

3
VTDIAG (V)

125

150
Ta (C)

175

200

Pch MOS FET Safe Operating Area (SOA)


100
Tc=25C 1ms

Nch MOS FET Safe Operating Area (SOA)


100
Tc=25C

PD Ta Characteristics
40
Allowable Power Dissipation PD (W)

35 30 25 20 15 10 5

Infinite heatsink (Tc =25C)

1ms

10ms
I OUT (A) I OUT (A)

10

10
10ms

100ms

100ms

No heatsink

0.3 2 10
VM-OUT (V)

0.3 40 100 2 10
VOUT -PG (V)

40

100

0 40 30

25

50

75

100

Ambient temperature Ta (C)

61

Full Bridge DC Motor Driver ICs SPF7301(under development)

Features
A DMOS of low ON resistance (0.1 typ) is mounted on the high and low side power elements Two input signals control the forward/reverse/brake of a DC motor Current limit and overcurrent protection circuits Low voltage and thermal protection, excess input detecting output and input terminal open protection

External Dimensions (unit: mm)


14.740.2 13.04 20
0.2

1.0 0.05
Fin thickness

+0.1

11 10.50.3 0.250.05 2.50.2


+0.15

Absolute Maximum Ratings


Parameter
Main power supply voltage Input terminal input voltage EN terminal voltage Disable terminal input voltage Output current DIAG output current DIAG inflow current Power dissipation Junction temperature Operating temperature Storage temperature
Thermal resistance (junction to case) Thermal resistance (junction to ambient air)

(Ta=25C)

Symbol
VB VIN1,VIN2 VEN VDI Io IoPeak VDIAG IDIAG P D1 P D2 Tj Top Tstg j-c j-a

Ratings
0.3 to 36 0.3 to 6 0.3 to 12 0.3 to 6 7 15 0.3 to 6 3 39 4 40 to 150 40 to 105 40 to 150 3.2 31

Unit
V V V V A A V mA W W C C C C/W C/W

Remarks

1 1.270.25 0.4 0.05


+0.15

10

20.2

7.50.2

1kHz, Duty 1%, Pulse 10S DIAG terminal sink current With an infinite heatsink mounted

a) Part No. b) Lot No.

*1

Standard Circuit Diagram


EN CP VB Power supply IN1 Ccp DIAG Vcc RDIAG

Note: *1: With glass epoxy + copper foil board (size 5.0 7.4cm; t: glass epoxy = 1.6mm /copper foil = 18 m)

Recommended Operation Range


Parameter
Main power supply voltage DI terminal input voltage Input terminal input voltage Output current DIAG terminal voltage Operating temperature

Full Brige Driver IC


IN2 DI

OUT1 M OUT2

SFP7301

Symbol
VB VDI VINx Io VDIAG Top

Ratings
8 to 18 0.3 to 5.3 0.3 to 5.3 1 0.3 to 5.3 40 to 105

Unit
V V V A V C

Remarks
Cin R1 R2 RDI PGND

LGND

Electrical Characteristics
Parameter
Main power supply current Low voltage protection operation voltage UVLO hysteresis voltage Output terminal leak current

(Tj = 30 to 125C, VB = 14V, EN = DI = 5V, Ccp = 33nF, RDIAG = 20k unless otherwise specified) * 2 min

* Recommended connection parts Pressure rise capacitor for charge pump circuits (CP to GND) Cp 33nF DIAG terminal pull-up resistance RDIAG: 20k Input terminal pull-down resistance R1, R2, RDI: 10k

Symbol
IBB1 IBB2 VuvloH VuvloL UVLO IleakHS IleakLS RDS(ON)_1H RDS(ON)_2H RDS(ON)_1L RDS(ON)_2L VF_H1 VF_H2 VF_L1 VF_L2 Iocp1_H1 Iocp1_H2 Iocp1_L1 Iocp1_L2 Iocp2_H1 Iocp2_H2 Iocp2_L1 Iocp2_L2 VINxH VINxL IINxH IINxL VDIxH VDIxL IDIxH IDIxL VENth IENH IENL VDIAG IDIAG IDIAGL TdON TdOFF Tr Tf Tddis VOVP VOVP Ttsd_ON Ttsd

Ratings typ 15

max 100 7.0 6.5

Unit
mA A V V V A A m m m m V V V V A A A A A A A A V V A A V V A A V A A V mA A S S S S S V V C C

Conditions
For VEN = 0V

5.0 4.5 0.5 100 100 100 100 100 1.5 1.5 1.5 1.5 7 7 7 7 15 15 15 15

Output DMOS RDS (ON)

100 200 200 200 200

Forward voltage characteristics between output DMOS and DS

Io1 = 1A Io2 = 1A Io1 = 1A Io2 = 1A

Overcurrent limiting operation current

4.5 4.5 4.5 4.5

10 10 10 10

OPC start current Input terminal voltage VIN1, VIN2 Input terminal current VIN1, VIN2 DI terminal voltage DI terminal current EN terminal input voltage EN terminal input current DIAG terminal output voltage DIAG terminal output current DIAG terminal leak current

2 0.8 100 100 2 0.8 100 100 0.8 10 1.5 10

VDI = 5V VDI = 0V

VDI = 5V VDI = 0V VEN = 5V VEN = 0V IDIAG = 0.5mA For VDIAG = 1.6V Time from VINxH to Voutx0.2 Time from VINxL to Voutx0.8 Time of Voutx from 20% to 80% Time of Voutx from 80% to 20% Time from DIthH to Voutx0.2

4 100 10 0.8 15 20 15 6 6 4 45

Input delay time

Overvoltage protection operation voltage OVP hysteresis width Thermal protection starting temperature Thermal protection hysteresis width

35 151

40 5 165 15

*3 *3

62

Note: *2: For the electrical characteristics for Tj = 40 to 150C, the design warranty applies to the above specification values. *3: Thermal protection starting temperature is 165C (typ) by design. The above parameters are the design specifications.

63

High Voltage Full Bridge Drive ICs SLA2402M

Features
One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) High Voltage Driver which accepts direct connection to the input signal line External components such as high voltage diodes and capacitors are not required

External Dimensions (unit: mm)


31.0 0.2 3.2 0.15 24.4 0.2 16.4 0.2

Ellipse 3.2 0.15 3.8

4.80.2 1.70.1

Lead plate thickness resins 0.8 max

8.5 max

Absolute Maximum Ratings


Parameter Power source voltage Input voltage Output voltage Output current Power dissipation Storage temperature Operation temperature Symbol Ratings 500 15 500 15 5 (Ta=25C) 40 to +125 40 to +105 Unit V V V A W C C PW 250s Conditions

9.90.2

13.00.2 2.7

VM VIN VO IO PD Tstg Topr

0.65

+0.2 0.1

1.0 0.1

+0.2

9.5 min

16.00.2

2.450.2 0.55 0.1


+0.2

17 P1.68 0.1 =28.56

31.5 max

Without heatsink

a: Part No. b: Lot No.

* Power GND (D terminal) to -HV (-HV terminal) voltage.

Electrical Characteristics
Parameter Power MOS FET output breakdown voltage Power MOS FET output leakage voltage High-side Power MOS FET output on-state voltage Low-side Power MOS FET output on-state voltage Symbol BVOUT IOUT (off) VOUT (on) 1 VOUT (on) 2 VOUT (on) 1 VOUT (on) 2 ICC 1 Quiescent circuit current ICC 2 Operating circuit current Input voltage (High level) Input voltage (Low level) ICC 3 VIH VIL t d (on) Delay time 1.4 3.3 2.5 15 0.8VCC 0.2VCC 4.0 4.0 mA mA V V s s s V VCC=10V, VM=400V VCC=10V, VM=400V VCC=4.5 to 15V VCC=4.5 to 15V VCC=10A, VIN=10V, VM=85A, IO=0.41A 40 to +105C 0.28 1.4 0.28 1.4 0.4 2.0 0.4 2.0 Ratings min 500 100 0.52 2.6 0.52 2.6 3.0 typ max Unit V A V V V V mA IO=100A VO=500V IO=0.4A, VIN=10V IO=2A, VIN=10V IO=0.4A, VGL=10V IO=2A, VGL=10V VCC=4.5 to 15V Conditions

Block Diagram

7 MOSQ1 D1 HO1 MOSQ'1 GL1 LO1 VIN1

+12V MOSQ2 HO2 15 OUT2 MOSQ'2 VIN2 LO2 L GND GL2 17

4 OUT1 2

VCC MIC HV

10

11

13

16

CPU

* Dotted Line: Outside Connection

Timing Chart
VCC IN1 IN2 HO1 LO2 Ignition OSC 400Hz

t d (off) t

Operating voltage

VCC

* About delay time


Signal input waveform vs output waveform
1 Highside switch turn-on, turn-off
VIN1 0V 0V VOUT1 10% 10% 10%

2 Lowside switch turn-on, turn-off


HO2
VIN1 0V 10% 10%

LO1 HV 0V 100V OUT2-GND 400V

0V 10% 10% VOUT2 10%

td (on)

td (on)

td (on)

td (on)

* t: t = td (on) td (off)
Measurement Circuit
VIN1 VOUT1 RL VOUT2 VIN2

Conditions VCC=10V, VIN=10V (pulse) VM=85V IO=0.41A (RL=207)

* When pulse signal is inputted to VlN1,


VIN2 VIN1 VM

RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off.

64

High Voltage Full Bridge Drive ICs SLA2402M

Electrical Characteristics
Quiescent circuit current
3.0
Quiescent circuit current ICC1 (mA) Quiescent circuit current ICC2 (mA)

Quiescent circuit current supplied high voltage


3.0 2.5 2.0 1.5 25C 1.0 40C 0.5 0 150C 105C VIN=0V VCC=10V

Operating circuit current


3.0 VCC=VIN1(2)=10V
Operating circuit current ICC3 (mA)

VIN=0V 2.5 2.0 1.5

150C 105C

2.5 2.0 1.5 1.0 0.5 0 25C 40C

25C

150C 105C

40C 1.0 0.5 0 0 5 10 15 20


Operation voltage VCC (V)

100

200

300

400

500

100

200

300

400

500

High voltage VM (V)

High voltage VM (V)

Quiescent circuit current supplied high voltage


5 VIN=0V VM=400V 4 150C 105C 3 25C 2 40C 1

Quiescent circuit current


3.0
Quiescent circuit current ICC2 (mA)

Operating circuit current


3.5
Operating circuit current ICC3 (mA)

Ta=25C 2.5 2.0

Quiescent circuit current ICC2 (mA)

VCC= 15V

Ta=25C 3.0 2.5 2.0 1.5 1.0 0.5 0

VCC= 15V

12V 1.5 1.0 0.5 0 10V 9V

12V 10V 9V

4.5V 0 100 200 300 400 500

4.5V

0 0 5 10 15 20
Operation voltage VCC (V)

100

200

300

400

500

High voltage VM (V)

High voltage VM (V)

Output on-state voltage


10 VCC =VIN =10V
Output on-state voltage (V)

Gate drive voltage


10 VCC=10V 8
Gate drive voltage VGL (V)

Gate drive voltage


10 Ta=25C 8
Gate drive voltage VGL (V)

8 150C 105C 4 25C 2 40C

VCC=15V VCC=9V

VCC= 4.5V

0 0 1 2
Output current (A)

0 50

0 0 50 100 150 0 5 10 15
Ambient temperature (C) Input voltage VIN (V)

Output on-state voltage


5 VCC=VIN=10V

Input threshold voltage


8
Input threshold voltage VIH, VIL (V)

7 6 5 4 3 2 1 0 50

VCC=10V VIH

Output on-state voltage (V)

3 I O=2A 2

VIL

1 I O=0.4A 0 50

50

100

150

50

100

150

Ambient temperature (C)

Ambient temperature (C)

65

High Voltage Full Bridge Drive ICs SLA2402M

Electrical Characteristics
High side switch turn-on, off
5.0 Ta=25C VM=85V, I O=0.41A 4.0
turn-on, off (s) turn-on, off (s)

High side switch turn-on, off


5.0 VM=85V, I O=0.41A VCC=10V 4.0 turn-off turn-off

Low side switch turn-on, off


5.0 Ta=25C VM=85V, I O=0.41A 4.0
turn-on, off (s)

turn-off 3.0

3.0

3.0

2.0

2.0 turn-on

2.0 turn-on 1.0

1.0

turn-on

1.0

0 4 6 8 10 12 14 16
Operation voltage VCC (V)

0 50

0 0 50 100 150 4 6 8 10 12 14 16
Ambient temperature (C) Operation voltage VCC (V)

Low side switch turn-on, off


5.0 turn-off VM=85V, I O=0.41A VCC=10V 4.0
turn-on, off (s)

Transient thermal resistance characteristics


100
Transient thermal resistance (C/W)

Safe operating area (Power MOS FET)


100 RDS (on) limited 10
Drain current (A)

10

100s 1ms 1 10ms 0.1

3.0

2.0 turn-on 1.0

0.1

0.01

Ta=25C Single pulse 0.01 0.1 1 10 100 0.01 10

Ta=25C Single pulse 100


Drain to source voltage (V)

0 50

50

100

150

0.001 0.0001 0.001

1000

Ambient temperature (C)

Power time (s)

Power derating curve


6 5
Power dissipation (W)

without heatsink

4 3 2 1 0 50

50

100

150

Ambient temperature (C)

66

67

High Voltage Full Bridge Drive ICs SLA2403M

Features
One Package Full Bridge Driver Consisted of High Voltage IC and Power MOS FETs (4 pieces) High Voltage Driver which accepts direct connection to the input signal line External components such as high voltage diodes and capacitors are not required

External Dimensions (unit: mm)


31.0 0.2 3.2 0.15 24.4 0.2 16.4 0.2

Ellipse 3.2 0.15 3.8

4.80.2 1.70.1

Lead plate thickness resins 0.8 max

8.5 max

Absolute Maximum Ratings


Parameter Power source voltage Input voltage Output voltage Output current IO (peak) Power dissipation Storage temperature Operation temperature Junction temperature PD 40 (Tc=25C) Tstg Topr Tj 40 to +125 40 to +125 150 W C C C With infinite heatsink 15 5 (Ta=25C) A W PW Symbol Ratings 500 15 500 7 Unit V V V A Tc=25C 250s Conditions

9.90.2

13.00.2 2.7

VM VIN VO IO

0.65

+0.2 0.1

1.0 0.1

+0.2

9.5 min

16.00.2

2.450.2 0.55 0.1


+0.2

17 P1.68 0.1 =28.56

31.5 max

a: Part No. b: Lot No.

Without heatsink

Block Diagram

* Power GND (D terminal) to -HV (-HV terminal) voltage.

Electrical Characteristics
4 D1

MOSQ1 HO1 MOSQ'1 GL1 LO1 VIN1 HV VIN2 VCC MIC LO2 L GND HO2

MOSQ2

D2

15 OUT2 14 16

Parameter Power MOS FET output breakdown voltage Power MOS FET output leakage voltage High-side Power MOS FET output on-state voltage Lowside Power MOS FET output on-state voltage Quiescent circuit current

Symbol BVOUT IOUT (off) VOUT (on) VOUT (on) ICC 1 ICC 2

Ratings min 500 100 0.18 0.18 0.26 0.26 0.34 0.34 3.0 4.0 4.0 0.8VCC 0.2VCC 2.0 3.0 6 15 typ max

Unit V A V V mA mA mA V V s s V IO=100A VO=500V

Conditions

5 3

OUT1

MOSQ'2 GL2

10

11

13

17

CPU

IO=0.4A, VIN=10V IO=0.4A, VGL=10V VCC=6 to 15V VCC=10V, VM=400V VCC=10V, VM=400V VCC=6 to 15V VCC=6 to 15V VCC=10A, VIN=10V, VM=85V, IO=0.41A 40 to +125C

* Dotted Line: Outside Connection

Timing Chart
VCC IN1 IN2 HO1 LO2 HO2 Ignition OSC 400Hz

Operating circuit current Input voltage (High level) Input voltage (Low level) Delay time

ICC 3 VIH VIL t d (on) t d (off) VCC

Operating voltage

* About delay time


Signal input waveform vs output waveform
1 Highside switch turn-on, turn-off
VIN1 0V 0V VOUT1 10% 10% 10%

2 Lowside switch turn-on, turn-off


LO1
VIN1 0V 10% 10%

HV

0V 100V

0V 10% 10% VOUT2 10%

OUT2-GND

400V

td (on)

td (on)

td (on)

td (on)

* t: t = td (on) td (off)
Measurement Circuit
VIN1 VOUT1 RL VOUT2 VIN2

Conditions VCC=10V, VIN=10V (pulse) VM=85V IO=0.41A (RL=207)

VIN2

VIN1

* When pulse signal is inputted to VlN1,


RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off.

VM

68

High Voltage Full Bridge Drive ICs SLA2403M

Electrical Characteristics
Quiescent circuit current
3.0
Quiescent circuit current ICC1 (mA) Quiescent circuit current ICC2 (mA)

Quiescent circuit current supplied high voltage


3.0 150C 125C 85C VIN=0V VCC=10V 150C 125C 85C 1.5 25C 1.0 40C 0.5 0

Operating circuit current


4.0 VCC=VIN1(2)=10V
Operating circuit current ICC3 (mA)

VIN=0V 2.5 2.0

2.5 2.0

3.5 3.0 2.5 85C 2.0 25C 1.5 1.0 0.5 0 0 100 200 300 400 500 40C 150C 125C

25C 1.5 40C 1.0 0.5 0 0 5 10 15 20


Operation voltage VCC (V)

100

200

300

400

500

High voltage VM (V)

High voltage VM (V)

Quiescent circuit current supplied high voltage


5
Quiescent circuit current ICC2 (mA)

Quiescent circuit current supplied high voltage


3.5 Ta=25C
Quiescent circuit current ICC2 (mA)

Operating circuit current


4.0 Ta=25C
Operating circuit current ICC3 (mA)

VIN=0V VM=400V 4

150C 125C 85C 3.0 2.5 2.0 1.5 1.0 0.5 0

VCC= 15V

3.5 3.0 2.5 2.0 1.5 1.0

VCC= 15V

25C

12V 10V 9V 6V

12V 10V 9V 6V

40C

0.5 0 0 100 200 300 400 500

0 0 5 10 15 20
Operation voltage VCC (V)

100

200

300

400

500

High voltage VM (V)

High voltage VM (V)

Output on-state voltage


6
VOUT (ON) (V)

Input threshold voltage


10

Gate drive voltage


10 Ta=25C VCC=10V
Gate drive voltage VGL (V)

VCC=VIN=10V
Input threshold voltage VIH (V)

5 4 3 2 1 0 0 1 2 3
I OUT (A)

VCC=15V 8 VCC=10V VCC= 6V

150C 125C 85C 25C 40C

Output on-state voltage

6 VCC=6V 4

0 50

0 0 50 100 150 200 0 5 10 15


Ambient temperature (C) Input voltage VIN (V)

Output current

Output on-state voltage


4
Output on-state voltage VOUT (ON) (V)

Input threshold voltage


7

Gate drive voltage


10

VCC=VIN=10V
Input threshold voltage VIL (V)

6
Gate drive voltage VGL (V)

8 VCC=10V 6 VCC=6V

5 4 3 2 1 0 50 VCC=10V

I O=2A

1 I O=0.4A 0 50

VCC=6V

50

100

150

50

100

150

0 50

50

100

150

Ambient temperature (C)

Ambient temperature (C)

Ambient temperature (C)

69

High Voltage Full Bridge Drive ICs SLA2403M

Electrical Characteristics
High side switch turn-on, off
5.0 Ta=25C VM=85V, I O=0.41A 4.0
turn-on, off (s) turn-on, off (s)

High side switch turn-on, off


5.0 VM=85V, I O=0.41A VCC=10V 4.0

Low side switch turn-on, off


5.0 Ta=25C VM=85V, I O=0.41A 4.0
turn-on, off (s)

turn-off 3.0

3.0

turn-off

3.0

turn-off

2.0 turn-on 1.0

2.0

turn-on

2.0 turn-on

1.0

1.0

0 4 6 8 10 12 14
Operation voltage VCC (V)

0 50

0 0 50 100 150 4 6 8 10 12 14
Ambient temperature (C) Operation voltage VCC (V)

Low side switch turn-on, off


5.0 VM=85V, I O=0.41A VCC=10V 4.0
turn-on, off (s)

Transient thermal resistance characteristics


100
Transient thermal resistance (C/W)

Safe operating area (Power MOS FET)


100 RDS (on) limited 10s 100s 1ms 1 10ms 0.1

10
Drain current (A)

10

turn-off 3.0

2.0

turn-on

0.1

1.0

0.01

Ta=25C Single pulse 0.01 0.1 1 10 100 0.01 10

Ta=25C Single pulse 100


Drain to source voltage (V)

0 50

50

100

150

0.001 0.001

1000

Ambient temperature (C)

Power time (s)

Power derating curve


50 Tc=25C

PD (W) Power derating

40

30

20

10 without heatsink 0 50

50

100

150

Ambient temperature (C)

70

71

High Voltage Full Bridge Drive ICs SMA2409M

Features
One Package Full Bridge Driver Consisted of High Voltage IC and Power IGBT (4 pieces) High Voltage Driver which accepts direct connection to the input signal line

External Dimensions (unit: mm)


31.0 0.2 4.00.2

Absolute Maximum Ratings


Parameter
Power supply voltage Input voltage Operation voltage Output voltage Output current (DC) Output current (pulses) Power dissipation Thermal resistance Operating temperature Storage temperature Junction temperature IGBT single pulse avalanche resistance ESD protection

(Ta = 25C)

2.70.2

Symbol
VM VIN Vcc Vo Io(DC) Io(pulse) PD j-a j-c Topr Tstg Tj EAS ESD

Ratings
500 15 15 500 7 15 4 20 31.2 6.2 40 to +105 40 to +150 150 5 2

Unit
V V V V A A W CW C C C mJ kV

Conditions
Power GNG to HV
1.16 0.1 14 P2.03 0.1= (28.42)
(root dimensions)
+0.2

0.65 0.1 0.55 0.1


+0.2

+0.2

(10.4)

10.20.2

1.2 0.2
(root dimensions)

Single pulse (PW = 50s max.) Tc = 25C Tc = 25C

31.3 0.2

a: Part No. b: Lot No.


1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

VDD = 30V, L = 1mH, Unclamped, Ic = 3.2A Human body model (C = 100pF, R = 1.5k)

Block Diagram

Electrical Characteristics
Parameter
IGBT output breakdown voltage IGBT output leak current IGBT output ON voltage Quiescent circuit current Operating circuit current Input threshold voltage Low-side IGBT gate drive voltage High side Delay time* Low side

(Ta = 25C)

4 OUT1 2

D1

IGBT Q1 HO1

VCC HO2

IGBT Q2

D2

Symbol
BVOUT IOUT (off) VOUT (on) Icc1 Icc2 Icc3 VIH VIL VGL t d (on) t d (off) t d (on) t d (off) td

Ratings min
570 100 1.0 1.3 1.2 1.8 3.0 4.0 4.0 0.8Vcc 0.2Vcc 0.8Vcc 0.6 1.8 0.8 1.3 0.7 2.2 0.9 1.6 16 0.8 2.6 1.0 1.9 2.5 9 15

12 OUT2

typ

max

Unit
V A V V mA mA mA V V V s s s s s V

Conditions
Io = 100A, Tj = 25C Vo = 500V Io = 0.4A, VIN (or VGL) = 10V Io = 2.0A, VIN (or VGL) = 10V Vcc = 10V, VM = VIN = 0V Vcc = 10V, VM = 400V, VIN = 0V Vcc = 10V, VM = 400V, VIN1 (or VIN2) = 10V Vcc = 9 to 15V Vcc = 9 to 15V VM = 85V, Io = 0.41A Vcc = 10V VIN = 10V (Out Stage = ON) VIN = 0V (Out Stage = OFF) t d = H/S t d (off) - L/S t d (on) or L/S t d (off) - H/S t d (on) Ta = 40 to +105C

IGBT Q'1 GL1

LO1 VIN1

MIC

LO2

HV VIN2 L GND

IGBT Q'2 GL2

14

10

11

13

CPU

* Dotted Line: Outside Connection

Timing Chart
A Drive Example
Ignition
VCC IN1 IN2 LO1 LO2 OSC250Hz

Operating voltage

Vcc

Recommended Operation Range


Parameter
Dead time

HVGND

0V 85V 400V

Symbol
td

Ratings min
5.0

typ

max

Unit
s

Conditions
Ta = 40 to +105C

OUT1GND 0V 400V 0V OUT2GND 400V

85V

85V

* About delay time


Signal input waveform vs output waveform
1 Highside switch turn-on, turn-off
VIN1 0V

2 Lowside switch turn-on, turn-off


VIN1 0V

10%

10%

10%

10%

0V Vout1 td(on) 10% td(off) 10%

0V Vout2

10%

10%

Measurement Circuit
RL VIN1 VOUT1 VIN2 VOUT2 VIN2

Conditions VCC=10V, VIN=10V (pulse) VM=85V IO=0.41A (RL=206)

* When pulse signal is inputted to VlN1,


VIN1

RL on solid line is ON and dotted line RL is off. On the contrary, when pulse signal is inputted to VlN2, RL on dotted line is ON and dotted line RL is off.

72

High Voltage Full Bridge Drive ICs SMA2409M

Electrical Characteristics
Quiescent circuit current
3.5
Quiescent circuit current ICC1 (mA)

Quiescent circuit current supplied high voltage


4.0
Quiescent circuit current ICC2 (mA)

Operating circuit current


3.5
Operating circuit current ICC3 (mA)

3.0 2.5

VIN=0V

150C 105C

3.5 3.0 2.5 2.0

VIN=0V VCC=10V
150C 105C

VCC=VIN1(2)=10V

3.0 2.5 2.0 1.5 1.0 0.5 0

150C 105C

25C

2.0 1.5 1.0 0.5 0 0 5 10 15 20


Operation voltage VCC (V)

40C

25C

25C 40C

1.5 1.0 0.5 0 0 100 200 300 400 500


High voltage VM (V)

40C

100

200

300

400

500

High voltage VM (V)

Quiescent circuit current supplied high voltage


5
Quiescent circuit current ICC2 (mA)

Quiescent circuit current supplied high voltage


3.5
Ta=25C
Quiescent circuit current ICC2 (mA)

Operating circuit current


3.5
Operating circuit current ICC3 (mA)

VIN=0V VM=400V

150C 125C

3.0 2.5

VCC= 15V

Ta=25C

3.0 2.5 2.0 1.5 1.0 0.5 0

VCC= 15V

25C

12V

2.0 1.5 1.0 0.5 0


10V 9V

12V 10V 9V 6V 4.5V

40C

6V 4.5V

0 0 5 10 15 20
Operation voltage VCC (V)

100

200

300

400

500

100

200

300

400

500

High voltage VM (V)

High voltage VM (V)

Output on-state voltage


2.0
VOUT (ON) (V)

Input threshold voltage


10
150C 105C 25C 40C VCC=15V
Input threshold voltage VIH (V)

Gate drive voltage


14
Ta=25C VCC=15V

VCC=VIN=10V

12
Gate drive voltage VGL (V)

1.5

10 8 6 4 2
VCC=9V

Output on-state voltage

6
VCC=9V

1.0

0.5 0 1 2 3
I OUT (A)

0 50

0 0 50 100 150 200 0 5 10 15


Ambient temperature (C) Input voltage VIN (V)

Output current

Output on-state voltage


2.0
Output on-state voltage VOUT (ON) (V)

Input threshold voltage


8 7 6 5 4 3 2 1
VCC=9V VCC=15V

Gate drive voltage


14 12
Gate drive voltage VGL (V)

VCC=VIN=10V
Input threshold voltage VIL (V)

1.8 1.6 1.4 1.2 1.0


I O=0.4A I O=2A

VCC=15V

10 8 6 4 2 0 50
VCC=9V

0.8 0.6 50

50

100

150

0 50

50

100

150

200

50

100

150

Ambient temperature (C)

Ambient temperature (C)

Ambient temperature (C)

73

High Voltage Full Bridge Drive ICs SMA2409M

Electrical Characteristics
High side switch turn-on, off
3.0 2.5
turn-on, off (s)

High side switch turn-on, off


3.5 3.0
turn-on, off (s)

Low side switch turn-on, off


2.0

2.0 1.5 1.0

turn-on, off (s)

t d (off)

2.5 2.0 1.5 1.0

1.5
t d (off) t d (off)

1.0
t d (on)

t d (on)

t d (on)

0.5

0.5 0 7 9 11 13 15
Operation voltage VCC (V)

0.5 0 50 0 0 50 100 150 7 9 11 13 15


Ambient temperature (C) Operation voltage VCC (V)

Low side switch turn-on, off


2.5

Transient thermal resistance characteristics


100
Transient thermal resistance (C/W)

IGBT ASO characteristics


100

2.0
t d (off)
turn-on, off (s)

Collector current (A)

10

10

1.5

100 s

1.0

t d (on)

1
1ms Ta = 25C Single pulse 10ms

0.1

0.5

0 50

50

100

150

0.01 0.001

0.01

0.1

10

100

0.1 10

100
Collector-emitter voltage (V)

1000

Ambient temperature (C)

Power time (s)

Power derating curve


5
without heatsink
PD (W) Power derating

0 50

50

100

150

Ambient temperature (C)

74

75

Custom ICs
Various processing technologies of BIP, BiCMOS, CMOS and BCD can be used for the semiconductor chips. Meets detailed user needs, especially power ICs. A wide range of general-purpose ICs is also available. Employs a monolithic chip with flip-chip construction for increased reliability making it ideal for car electronic devices. Also available in hybrid ICs with transfer mold construction, multi-chip IC configuration and power monolithic IC configuration.

Features
All semiconductor chips used are manufactured by Sanken. Main product lineup consists of power ICs produced out of many years' experience of Sanken. Uses monolithic chips with flip-chip construction. Mainly available in miniature transfer-mold packages.

Examples of Sanken Automotive Hybrid ICs

Lead frame type multi-chip power IC

One-chip power IC

Examples of Custom Hybrid IC Products


Regulators for alternators Igniters Power supply for microcomputer system Power steering control IC Motor and actuator driver Others
Lead frame type power hybrid IC with ceramic substrate
High-output high-breakdown voltage IC Simplified integration of custom circuits Distribution of unit functions (Actuators may be built in the device)

Surface-mount power IC

76

Custom ICs

External Dimensions (unit: mm)


MT-100
15.6 5.0

FM205
10.0 4.2

STA 8pin
20.2 4.0

STA 10pin
25.25 4.0

19.9

16.9

9.0

SMA12pin
31.0 4.0

SMA15pin
31.0 4.0

SLA12pin
31.0 4.8

9.0

SLA15pin
31.0 4.8

10.2

10.2

16.0

SLA18pin
31.0 4.8

3GR-F
15.6 5.5

3GR-M
19.8

STR-S
5.5
24.2 5.5

16.0

23

23

16

SPM

SMD16pin

SPF16pin
12.05

35

4.8

16 15 14 13 12 11 10 9

16

9.8

6.8

23

16.1

Pin 1

20.0

8
1 2 3 4 5 6 7 8

4.0

SPF20pin
14.740.2 13.040.2 20 11 1.0 0.05
Fin thickness
+0.1

SPF24pin
17.28
24 13

10.50.3

7.5

0.2

1 1.270.25 0.4 0.05


+0.15

10
1 12

2.50.2

20.2

0.25 0.05

+0.15

2.5

10.6

7.5

2.5

10.5

7.5

77

78

2 Discretes
2-1. Transistors
2-1-1. Transistors
......................................... ......

2-2. MOS FETs


80 80 81

2-2-1. MOS FETs

......................................... ...

108 108

2SA1488/1488A (60V/4A, 80V/4A) 2SA1567 (50V/12A) 2SA1568 (60V/ 2SA1908 (120V/8A)

2SK3710 (60V/70A/6m, Surface-mount)

....................................

2SK3711 (60V/70A/6m) .............................. 109 2SK3724 (60V/80A/5m, Surface-mount) ... 110 2SK3800 (40V/70A/6m, Surface-mount) .. 111 2SK3801 (40V/70A/6m) .............................. 112 2SK3803 (40V/85A/3m, Surface-mount) ... 113 2SK3851 (60V/85A/4.7m)
.......................... ...

12A) .................................... 82
..................................... ...................................

83 84

2SB1622 (200V/15A) 2SC4024 (50V/10A) 2SC4065 (60V/12A) 2SC4153 (120V/7A)

2SC3852 (60V/3A) ........................................... 85


........................................ ...................................... ........................................ .................................. ....................................

86 87 88 89 90 91 92 93

114 115 116 117

FKV460S (40V/60A/9m, Surface-mount) FKV660S (60V/60A/14m, Surface-mount) 2-2-2. MOS FET Arrays

2SD2141 (38050V/6A) 2SD2382 (605V/6A) 2SD2633 (150V/8A) FP812 (100V/8A)

...........................

SDK06 (525V/3A/0.25, Surface-mount 4-circuits) 117 SDK08 (50V/4.5A/0.08, Surface-mount 4-circuits) SLA5027 (60V/12A/0.08, 4-circuits) SMA5113 (450V/7A/1.1, 4-circuits)
..........

........................................

118

........................................... .................................

SDK09 (12V/6A/0.2, Surface-mount 4-circuits) 119


120

MN611S (11510V/6A)

MN638S (38050V/6A) ................................... 94 SSD103 (655V/6A, Surface-mount) 2-1-2. Transistor Arrays


...........

SLA5098 (40V/20A/0.017, 6-circuits) ....... 121


..........

95 96 96

122

............................

STA508A (120V/6A/0.2, 4-circuits) ........... 123 STA509A (525V/3A/0.25, 4-circuits)


.......

SDA03 (60V/6A, Surface-mount 4-circuits) SDC09 (655V/6A, Surface-mount 2-circuits) SLA8004 (60V/12A, 55V/12A, H-bridge) STA315A (355V/2A, 3-circuits) STA335A (355V/3A, 2-circuits) STA415A (355V/2A, 4-circuits) STA461C (655V/6A, 2-circuits) STA464C (655V/6A, 4-circuits)
.........

124

SDA04 (60V/6A, Surface-mount 2-circuits) 97


98 99

2-3 Thyristors
2-3-1. Reverse Conducting Thyristors .. 125 TFC561D (600V, 430A, 1200A/s) TFC562D (600V, 600A, 1600A/s)
.............. ..............

SPF0001 (11510V/6A, Surface-mount 2-circuits) 100


.................. .................. ..................

125 126

101 102 103

2-4. Diodes
2-4-1. Alternator Diodes
.......................... ..

STA460C (6010V/6A, 2-circuits) .............. 104


................

127 128 129 130

105

2-4-2. High-voltage Diodes for Igniter 2-4-3. Power Zener Diodes 2-4-4. General-purpose Diodes

STA463C (11510V/6A, 2-circuits) ............ 106


..................

................... ..........

107

79

Power Transistor 2SA1488/1488A

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 2SA1488 2SA1488A 80 60 60 80 6 4 1 25 (Tc = 25C) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB Test Conditions

Typical Switching Characteristics (common emitter)


VCC (V) 12 RL () 6 IC (A) 2 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 200 t on t stg tf IB2 (mA) (s) (s) (s) 200 0.25typ 0.75typ 0.25typ

(13.5)

VCB = VEB = 6V IC = 25mA VCE = 4V, IC = 1A IC = 2A, IB = 0.2A VCE = 12V, IE = 0.2A VCB = 10V, f = 1MHz

(Ta = 25C) Ratings Unit 2SA1488 2SA1488A A 100max 100max 60 80 V A 100max 60min 80min V 40min V 0.5max 15typ MHz 90typ pF

External Dimensions TO220F (full-mold)


4.2 2.8

10.0

3.3 4

C0.5

8.4
a b

16.9

1.35 1.35 0.85 2.54 2.2 2.54

3.9

0.8

2.6

0.45

B C E

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


4

VCE (sat)IB Characteristics (typ.)


1.5

IC VBE Temperature Characteristics (typ.)


4 ( VC E = 4 V)

8
3

0m

60mA

50mA
40mA
3

VCE (sat) (V)

IC (A)

30mA

1.0

IC (A)

re)

atu

per

tu re

20mA

tem

p e ra

125

1A 0 0 1 2 3 4 5 6 0 0.01 0.05 0.1 0.5 1 0 0

0.5

3 0 C

2 5 C

IB = 5mA

2A

(C a s

1.0

(C a s

IC = 3A

(Ca

10mA

se

0.5

e te m

e te m

p e ra

tu re

1.5

VCE (V)

IB (A)

VBE (V)

hFE IC Characteristics (typ.)


500 (VC E = 4V)

hFE IC Temperature Characteristics (typ.)


200 125C (VC E = 4 V )

j-a t

Characteristics

Typ

hFE

100

hFE

30C 50

50 20 0.01 20 0.02

j-a

(C/W)
1 1 4 0.7 1

100

25C

0.1

0.5

0.1

10

100

1000

IC (A)

IC (A)

t (ms)

f T IE Characteristics (typ.)
60 50 40 (VCE = 12V)

Safe Operating Area (single pulse)


10 5

PC Ta Derating
30
natural air cooling Silicone grease Aluminum heatsink Unit: mm

100ms

10
DC

1m

s
20

fT (MHz)

Typ

PC (W)

IC (A)

1 0.5
Without heatsink natural air cooling

ith

30 20 10 0 0.005 0.01

in

15
10

fin

ite

15

he

100

at

si

nk

0.1 0.05 0.05 0.1 0.5 1 3 3 5 10 50 100 2 0 0

10 0 50 2 50 2

Without heatsink

25

50

75

100

125

150

IE (A)

VCE (V)

Ta (C)

80

Power Transistor 2SA1567

Absolute Maximum Ratings (Ta = 25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 50 50 6 12 3 35 (Tc = 25C) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB Test Conditions VCB = 50V VEB = 6V IC = 25mA VCE = 1V, IC = 6A IC = 6A, IB = 0.3A VCE = 12V, IE = 0.5A VCB = 10V, f = 1MHz Ratings 100max 100max 50min 50min 0.35max 40typ 330typ

(Ta=25C) Unit A A V V MHz pF

External Dimensions TO220F (full-mold)


4.2 2.8

10.0

3.3 4

C0.5

8.4
a b

16.9

VCC (V) 24

RL () 4

IC (A) 6

VBB1 (V) 10

VBB2 (V) 5

IB1 (mA) 120

IB2 t on t stg tf (mA) (s) (s) (s) 120 0.4typ 0.4typ 0.2typ

(13.5)

Typical Switching Characteristics (common emitter)


2.54 2.2

1.35 1.35 0.85 2.54

3.9

0.8

2.6

0.45

B C E

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


I 20B = 0m A
12 10 8 6 4 2 0 0 1 2 3 4 5 6
15 0mA

VCE (sat)IB Characteristics (typ.)


1.5

IC VBE Temperature Characteristics (typ.)


12 10 ( VC E = 4 V)

100mA
1.0

VCE (sat) (V)

IC (A)

60mA
40mA

IC (A)

6 4
5C tem (Ca se

20mA

0.5 6A 3A 1A 0 2

IC = 12A 9A

10mA
5mA

2 0 0

C (C a

10

100

1000 3000

0.2

0.4

0.6

0.8

30

25

12

ure ) se t emp era C (C ture ase ) te m p e ra tu re )

pe

rat

1.0

1.2

VCE (V)

IB (mA)

VBE (V)

hFE IC Characteristics (typ.)


500
Typ

hFE IC Temperature Characteristics (typ.)


(VC E = 1V) 500 (VC E = 1V ) 125C 25C

j-a t

Characteristics

(C/W)
j-a

30C

hFE

hFE

100 50 30 0.02 0.1 1 10

100 50 30 0.02 0.1 1 10

0.5 0.3 1 10 100 1000

IC (A)

IC (A)

t (ms)

f T IE Characteristics (typ.)
50 (VCE = 12V)

Safe Operating Area (single pulse)


30

PC Ta Derating
35 30
natural air cooling Silicone grease Aluminum heatsink Unit: mm

1m
40

Typ

10 5

10 m s
s 0m

10
DC

fT (MHz)

ith

PC (W)

IC (A)

20
150

in fin

30

1 0.5
Without heatsink natural air cooling

ite he at

20 0.1 0 0.05 0.1 1 12 0.05 3

10

100

10

1 50 0 2 2

si nk

50 50 2 2 0 0
Without heatsink

10

50

100

25

50

75

100

125

150

IE (A)

VCE (V)

Ta (C)

81

Power Transistor 2SA1568

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 60 60 6 12 3 35 (Tc=25C) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) VFEC fT COB Test Conditions VCB = 60V VEB = 6V IC = 25mA VCE = 1V, IC = 6A IC = 6A, IB = 0.3A IECO = 10A VCE = 12V, IE = 0.5A VCB = 10V, f = 1MHz Ratings 100max 60max 60min 50min 0.35max 2.5max 40typ 330typ

(Ta=25C) Unit A mA V V V MHz pF

External Dimensions TO220F (full-mold)


10.0 4.2 2.8

3.3 4

C0.5

8.4
a b

16.9

Typical Switching Characteristics (common emitter)


VCC (V) 24 RL () 4 IC (A) 6 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 120 IB2 t on t stg tf (mA) (s) (s) (s) 120 0.4typ 0.4typ 0.2typ
2.54 2.2

1.35 1.35 0.85 2.54

3.9

0.8

2.6

(13.5)

0.45

B C E

a) Part No. b) Lot No. (Unit : mm)

IC VCE Characteristics (typ.)


12
I 20 B = 0m A
150
mA

VCE (sat) IB Characteristics (typ.)


1.4

IC VBE Temperature Characteristics (typ.)


12 10 ( VC E = 1 V)

10 8

100mA
1.0

60mA
6 4 2 0
40mA

VCE (sat) (V)

IC (A)

IC (A)

IC = 12A 9A 6A 0.5 1A 3A

ure

pe

atu

tem

C (C ase

(Ca

20mA

10mA
0 7 10

2 0

12

25

100

1000 3000

0.2

0.4

0.6

0.8

30

C (C a

5C

s e te m

se

tem

1.0

p e ra

per

tu re

rat

re)

1.2

VCE (V)

IB (mA)

VBE (V)

hFE IC Characteristics (typ.)


300 100

(VC E = 1V)

hFE IC Temperature Characteristics (typ.)


300 125C 100 25C 30C (VC E = 1V )

j-a t

Characteristics

Typ

hFE

hFE

(C/W)
10
j-a

1 0.5

10

2 0.02

0.1

IC (A)

10 12

2 0.02

0.1

IC (A)

10 12

0.3

10

100

1000

t (ms)

f T IE Characteristics (typ.)
50 (VCE = 12V)

Safe Operating Area (single pulse)


30

PC Ta Derating
35 30
natural air cooling Silicone grease Aluminum heatsink Unit: mm

1m
40

Typ

10 5

m 10 s
s

10
DC

0m

fT (MHz)

ith

PC (W)

IC (A)

20

in fin

30

1 0.5
Without heatsink natural air cooling

ite he

150
10 50 50 2

at si

15

nk

20 0.1 0 0.05 0.1 1 10 0.05 3

2
02

100

10

10

50

100

2 0

Without heatsink

25

50

75

100

125

150

IE (A)

VCE (V)

Ta (C)

82

Power Transistor 2SA1908

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 120 120 6 8 3 75 (Tc=25C) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO V(BR) CEO hFE * VCE (sat) fT COB Test Conditions VCB = 120V VEB = 6V IC = 50mA VCE = 4V, IC = 3A IC = 3A, IB = 0.3A VCE = 12V, IE = 0.5A VCB = 10V, f = 1MHz Ratings 10max 10max 120min 50min 0.5max 20typ 300typ

* Rank: O (50 to 100), P (70 to 140), Y(90 to 180)


16.2

1.75 2.15 1.05 5.450.1 1.5 4.4


+0.2 0.1

3.3

0.8

Typical Switching Characteristics (common emitter)


VCC (V) 40 RL () 10 IC (A) 4 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 400 IB2 t on t stg tf (mA) (s) (s) (s) 400 0.14typ 1.40typ 0.21typ

3.0 5.450.1 1.5 0.65 3.35 0.1


+0.2

V MHz pF

23.0 0.3

9.50.2

3.30.2 1.6

a b

5.5

(Ta=25C) Unit A A V

External Dimensions FM100 (T03PF)


0.8 0.2 15.6 0.2 5.50.2 3.450.2

a) Part No. b) Lot No. (Unit : mm)

IC VCE Characteristics (typ.)


8
A 50 3

VCE (sat) IB Characteristics (typ.)


3
A

IC VBE Temperature Characteristics (typ.)


8 ( VC E = 4 V)

0m

m 50

A
100m

75mA

IC (A)

re)

re)

atu

tem

se t em

25mA
2

125

25

0.2

0.4

4A 2A 0.6 0.8

1.0

0.5

30

IB=10mA

IC = 8A

C (C as

(Ca

se

C (C a

1.0

e te m

p e ra

per

per

atu

tu re

50mA

VCE (sat) (V)

2
)

IC (A)

1.5

VCE (V)

IB (mA)

VBE (V)

hFE IC Characteristics (typ.)


200

hFE IC Temperature Characteristics (typ.)


(VC E = 4V) 300 125C 25C (VC E = 4V )

j-a t

Characteristics

Typ
100

hFE

(C/W )
j -a

hFE

100

30C

1 0.5

50 30 0.02

50 30 0.02 0.2 0.1 0.5 1 5 8 1 10 100 1000 2000

0.1

0.5 1

5 8

IC (A)

IC (A)

t (ms)

f T IE Characteristics (typ.)
30 (VCE = 12V)

Safe Operating Area (single pulse)


20 10
10
DC

PC Ta Derating
80

Typ
20

10

0m

60

W it h

fT (MHz)

in

PC (W)

IC (A)

fi ni te

40

he at

1 0.5
Wit h ou t h e a t sin k n a t u ra l a ir c oolin g

si nk

10

20

0 0.02

0.05 0.1

0.5

5 8

0.1 5

10

50

100 150

3.5 0

Wit h ou t h e a t sin k

25

50

75

100

125

150

IE (A)

VCE (V)

Ta (C)

83

Power Transistor 2SB1622

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 200 200 5 15 1 85 (Tc=25C) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol Test Conditions min Ratings typ max 100 100

(Ta=25C) Unit

External Dimensions
3.3 0.2 0.8 5.5 0.2 5.5 0.2 3.45 0.2 9.5 0.2

ICBO IEBO VCEO hFE* VCE(sat) VBE(sat) fT COB

A VCB = 200V VEB = 5V A IC = 30mA 200 V VCE = 4V, IC = 10A 5000 30000 IC = 10A, IB = 10mA 2.5 V IC = 10A, IB = 10mA 3.0 V VCE = 12V, IE = 2A 60 MHz VCB = 10V, f = 1MHz pF 270 Rank: O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) *

1.75 0.15 2.150.15 1.05 0.1 5.450.1


+0.2

1.6 3.3

a b

23.0 0.3

16.2

0.8

5.45 0.1 15.60.2 1.5 4.4 1.5

0.65 0.1

+0.2

3.350.2

Typical Switching Characteristics


VCC (V) 40 RL () 4 IC (A) 10 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 10 IB2 t on t stg tf (mA) (s) (s) (s) 10 0.4typ 3.6typ 1.0typ

a) Part No. b) Lot No.


B C E

(Unit : mm)

IC VCE Characteristics (typ.)


m A

VCE (sat) IB Characteristics (typ.)


3

VCE (sat) IB Temperature Characteristics (typ.)


3

15
50mA 15mA 5.0mA

1.5mA 1.0mA

VCE (sat) ( V )

VCE (sat) ( V )

10

0.8mA 0.5mA IB = 0.3mA

IC = 15A IC = 10A IC = 5A

125C 75C 25C 30C


2

IC = 5A

IC (A)

.0

0 0.2

10

100 200

0 0.1

10

100 200

VCE ( V )

IB (mA)

IB (mA)
(VCE = 4V)

VCE (sat) IB Temperature Characteristics (typ.)


3 IC = 10A

IC VBE Temperature Characteristics (typ.)


15

hFE IC Characteristics (typ.)


100000 50000 typ VCE = 4V

VCE (sat) ( V )

hFE

10

IC (A)

125C 75C 25C 30C

Ta=150C 125C 100C 75C

10000 5000

50C 25C 0C 30C 55C

1000 0.2

0.5

10

3.0

20

0 0.2

0 1 10 100 200 1 2 3

IC (A) VBE (V)

IB (mA)

hFE IC Temperature Characteristics (typ.)


100000 50000
150C 125C 100C 75C

ton tstg t f IC Characteristics (typ.)


10

j-a t

Characteristics

VCE = 4V

3.0 Ta = 25C VCC = 40V IB1 = IB2 = 10mA

ton tstg tf (sec)

(C/W)
j-a

1.0 0.5

hFE

tstg
1 0.5

10000 5000
50C 25C 0C 30C 55C

tf ton

1000 0.2

0.5

10

20

0.1 0.2

0.1 0.5 1 5 10 20 1 10 100 1000 2000

IC (A)

IC (A)

t (sec)
Ta = 25C (single pulse)

f T IE Characteristics (typ.)
80

Safe Operating Area


50 30 10 5
D.

PC Ta Derating
90 80

m 10

60

10
C.

70
ith W

0m

fT (MHz)

PC (W)

60 50 40 30 20 10 0

in fin ite

IC (A)

he

40

at si

1 0.5
Without heatsink natural air cooling

nk

20 0.1 0.05 3

Without heatsink

0 0.02

0.1

0.5 1

5 10

10

100

500

25

50

75

100 125 150

84 70

IE (A)

VCE ( V )

Ta (C)

Power Transistor 2SC3852

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 80 60 6 3 1 25 (Tc=25C) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB Test Conditions VCB = 80V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A IC = 2A, IB = 50mA VCE = 12V, IE = 0.2A VCB = 10V, f = 1MHz Ratings 10max 100max 60min 500min 0.5max 15typ 50typ

(Ta=25C) Unit A A V V MHz pF

External Dimensions TO220F (full-mold)


10.0 4.2 2.8

3.3

C0.5

8.4
a b

16.9

3.9

0.8

2.6

Typical Switching Characteristics (common emitter)


VCC (V) 20 RL () 20 IC (A) 1.0 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 15 IB2 t on t stg tf (mA) (s) (s) (s) 30 0.8typ 3.0typ 1.2typ
2.54 2.2

1.35 1.35 0.85 2.54

(13.5)

0.45

B C E

a) Part No. b) Lot No. (Unit : mm)

IC VCE Characteristics (typ.)


3
IB =1 2 mA

VCE (sat) IB Characteristics (typ.)


1.5
8mA

IC VBE Temperature Characteristics (typ.)


3 ( VC E = 4 V)

5mA

VCE (sat) (V)

1.0

IC (A)

IC (A)

ure

tu re p e ra s e te m
3 0 C (C a s

rat

tem

2mA
1

0.5
3A

(Ca

125

0 0.001

0.005 0.01

0.05 0.1

0.5 1

0.5

25C

0.5mA

2A IC =1A

(C a

1mA

e te mp

se

e ra tu

pe

re )

3mA

1.0 1.1

VCE (V)

IB (A)

VBE (V)

hFE IC Characteristics (typ.)


2000 1000 (VCE=4V)

hFE IC Temperature Characteristics (typ.)


2000 (VC E = 4V )

j-a t

Characteristics

125C

500

500

30C

j-a

(C/W)
1 VCB = 10V IE = 2A 1000 0.5 1

Typ

1000

25C

hFE

hFE

100 0.01

0.1

0.5

100 0.01

0.1

0.5

10

100

IC (A)

IC (A)

t (ms)

f T IE Characteristics (typ.)
30 (VCE = 12V)

Safe Operating Area (single pulse)


10
1m

PC Ta Derating
30

20

fT (MHz)

PC (W)

IC (A)

Typ

DC
1 0.5

10 10 ms 0m s

20

W ith ite fin in a he in ts k

10
Without heatsink natural air cooling

10

0.1 0 0.005 0.01 0.05 0.1 0.5 1 2 0.05 3 5 10 50 100 0 0

Without heatsink

50

100

150

IE (A)

VCE (V)

Ta (C)

85

Power Transistor 2SC4024

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 100 50 15 10 3 35 (Tc=25C) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) fT COB Test Conditions VCB = 100V VEB = 15V IC = 25mA VCE = 4V, IC = 1A IC = 5A, IB = 0.1A VCB = 12V, IE = 0.5A VCB = 10V, f = 1MHz Ratings 10max 10max 50min 300 to 1600 0.5max 24typ 150typ

(Ta=25C) Unit A A V V MHz pF

External Dimensions TO220F (full-mold)


10.0 4.2 2.8

3.3 4

C0.5

8.4
a b

16.9

3.9

0.8

2.6

Typical Switching Characteristics (common emitter)


VCC (V) 20 RL () 4 IC (A) 5 IB1 (A) 0.1 IB2 (A) 0.1 t on (s) 0.5typ t stg (s) 2.0typ tf (s) 0.5typ
2.54 2.2

1.35 1.35 0.85 2.54

(13.5)

0.45

B C E

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


10
IB = 35mA 30mA

VCE (sat) IB Characteristics (typ.)


1.5

IC VBE Temperature Characteristics (typ.)


10 ( VC E = 4 V)

25mA

IC (A)

20mA

VCE (sat) (V)

1.0

IC (A)

rat

re)

15mA
4

ure

6
pe

atu

0 0

0 0.002

0.01

0.1

0 0

30

IC = 1A

25

3A

12

5A

C (C a

C ( Ca

5C

5mA

(C

se

10A

s e te m

as

0.5

tem

p e ra

e t em

per

10mA

tu re

0.5

1.0

1.2

VCE (V)

IB (A)

VBE (V)

hFE IC Characteristics (typ.)


1000 (VC E = 4V)

hFE IC Temperature Characteristics (typ.)


1000
125C

j-a t

Characteristics

(VC E = 4V )

500

500

25C

hFE

hFE

30

(C/W)
j-a

Typ

0.5 100 0.02 0.1 0.5 1 5 10 100 0.02 0.1 0.5 1 5 10 0.3 1 10 100 1000

IC (A)

IC (A)

t (ms)

f T IE Characteristics (typ.)
30 (VCE = 12V)

Safe Operating Area (single pulse)


30
1m s

PC Ta Derating
40
natural air cooling Silicone grease Aluminum heatsink Unit: mm

Typ
10 20 5
DC

10

10

0m

30

fT (MHz)

PC (W)

IC (A)

ith

20

in fin ite he at

10

1 0.5
Without heatsink natural air cooling

10

0 0.05 0.1

0.5

10

0.2 3

10

50

100

2 0

Without heatsink

15 0 2 1 50 50 2 00 10 0 2
25 50 75

150

si nk

100

125

150

IE (A)

VCE (V)

Ta (C)

86

Power Transistor 2SC4065

Absolute Maximum Ratings


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 60 60 6 12 3 35 (Tc=25C) 150 55 to +150

(Ta=25C) Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) VFEC fT COB Test Conditions VCB = 60V VEB = 6V IC = 25mA VCE = 1V, IC = 6A IC = 6A, IB = 1.3A VECO = 10A VCE = 12V, IE = 0.5A VCB = 10V, f = 1MHz Ratings 100max 60max 60min 50min 0.35max 2.5max 24typ 180typ

(Ta=25C) Unit A mA V V V MHz pF

External Dimensions TO220F (full-mold)


10.0 4.2 2.8

3.3

C0.5

8.4
a b

16.9

Typical Switching Characteristics (common emitter)


VCC (V) 24 RL () 4 IC (A) 6 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.12 IB2 t on t stg tf (A) (s) (s) (s) 0.12 0.6typ 1.4typ 0.4typ
2.54 2.2

1.35 1.35 0.85 2.54

3.9

0.8

2.6

(13.5)

0.45

B C E

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


12

VCE (sat) IB Characteristics (typ.)


1.3
100mA

IC VBE Temperature Characteristics (typ.)


12 10 ( VC E = 1 V)

10 8

20

0 15

0m

mA

60mA

1.0

VCE (sat) (V)

IC (A)

IC (A)

ure

atu

tem

per

12A
12

C (C ase

IC = 1A
0 0 2 4 6 0 0.005 0.01

0.1

3 0 C

3A

25

IB = 10mA

6A

9A

(C a s

5C

e te m

(Ca

se

tem

20mA

0.5

0.5

VCE (V)

IB (A)

VBE (V)

hFE IC Characteristics (typ.)


400 (VCE = 1V)

hFE IC Temperature Characteristics (typ.)


400 (VCE = 1V)

j-a t

Characteristics

Typ
100 100

125
50

hFE

hFE

50

(C/W)

C 25 C 0 3

1 0.5

10 5 3 0.02

10 5 3 0.02

j-a

0.1

10 12

0.1

10 12

0.2 1

10

100

p e ra

tu re

rat

re)

40mA

pe

1.0 1.1

1000

IC (A)

IC (A)

t (ms)

f T IE Characteristics (typ.)
30 (VCE = 12V)

Safe Operating Area (single pulse)


30
1m s

PC Ta Derating
40
natural air cooling Silicone grease Aluminum heatsink Unit: mm

Typ
20

10

10 5

10

m s

DC

0m

30

fT (MHz)

PC (W)

IC (A)

ith in

1 0.5
Without heatsink natural air cooling

20

fin ite he at si

10

nk

10

0.1 0 0.05 0.1 0.5 1 5 10 12 0.05 3 5 10 50 100 2 0

150 15 0 2 1 50 50 2 00 10 02
Without heatsink

25

50

75

100

125

150

IE (A)

VCE (V)

Ta (C)

87

Power Transistor 2SC4153

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 200 120 8 7 (pulse 14) 3 30 (Tc=25C) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) VBE (sat) fT COB Test Conditions VCB = 200V VEB = 8V IC = 50mA VCE = 4V, IC = 3A IC = 3A, IB = 0.3A IC = 3A, IB = 0.3A VCE = 12V, IE = 0.5A VCB = 10V, f = 1MHz Ratings 100max 100max 120min 70 to 220 0.5max 1.2max 30typ 110typ

(Ta=25C) Unit A A V V V MHz pF

External Dimensions TO220F (full-mold)


10.0 4.2 2.8

3.3

C0.5

8.4
a b

16.9

3.9

0.8

2.6

Typical Switching Characteristics (common emitter)


VCC (V) 50 RL () 16.7 IC (A) 3 VBB1 (V) 10 VBB2 (V) 5 IB1 (A) 0.3 IB2 t on t stg tf (A) (s) (s) (s) 0.6 0.5max 3max 0.5max
2.54 2.2

1.35 1.35 0.85 2.54

(13.5)

0.45

B C E

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


7

VCE (sat) IB Characteristics (typ.)


3

IC VBE Temperature Characteristics (typ.)


7 6 ( VC E = 4 V)

200
5 5

mA
15

0mA
100m A

VCE (sat) (V)

IC (A)

IC (A)

rat

re)

4 3 2 1

60mA 40mA

5 4
tem ure )

pe

atu

12

IC = 1A
0 0 1 2 3 4 0 0.005 0.01 0.1

3A

5A
1 2

0 0

0.5

3 0 C

25

(C a s

5C

IB =10mA

C (C a

(Ca

e te m pe

se t em

se

per

20mA

VCE (V)

IB (A)

VBE (V)

hFE IC Characteristics (typ.)


300 (VCE = 4V)

hFE IC Temperature Characteristics (typ.)


300 (VCE = 4V)

j-a t

Characteristics

125C

Typ
100 50 100 50

hFE

hFE

C 30

(C/W)

25C

1 0.5

20 0.01

0.1

0.5

5 7

20 0.01

j-a

0.1

0.5

5 7

0.2 1

10

100

ra tu

re )

1.0 1.1

1000

IC (A)

IC (A)

t (ms)

f T IE Characteristics (typ.)
40 (VCE = 12V)

Safe Operating Area (single pulse)


20 10 5
s 10m

PC Ta Derating
30
natural air cooling Silicone grease Aluminum heatsink Unit: mm

10

0 s

Typ
30

20
W ith

fT (MHz)

PC (W)

IC (A)

in fin

20

1 0.5

ite

15

he

10 10 0.1 0 0.01 0.1 1 5 0.05 5 10 50 100 200 2 0


Without heatsink natural air cooling

15

at

si

50 50 2

100

2
2

nk

00

Without heatsink

25

50

75

100

125

150

IE (A)

VCE (V)

Ta (C)

88

Power Transistor 2SD2141

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 38050 38050 6 6 (pulse 10) 1 35 (Tc=25C) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat ) Test Conditions VCB = 330V VEB = 6V IC = 25mA VCE = 2V, IC = 3A IC = 4A, IB = 20mA Ratings 10max 20max 330 to 430 1500min 1.5max

(Ta=25C) Unit A A V V

External Dimensions TO220F (full-mold)


10.0 4.2 2.8

3.3

C0.5

8.4
a b

16.9

1.35 1.35 0.85 2.54 2.2 2.54

3.9

0.8

2.6

(13.5)

0.45

B C E

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


10 150mA 120mA

VCE (sat) IB Characteristics (typ.)


3
20m A

IC VBE Temperature Characteristics (typ.)


10 ( VC E = 4 V)

A 90m 0mA 6

A 18m 4mA

VCE (sat) (V)

IC (A)

2mA

IC (A)

ure rat

mp

(C

as

se

tem

1A
5 C

12

C ( Ca

0.2 0.5

10

50 100 200

0 0

1.0

3 0 C

25

(C a s

e te m pe

te

pe

3A

er

5A

ra tu

IB = 1mA

at

re )

ur

IC = 7A

e)

2.0

2.4

VCE (V)

IB (mA)

VBE (V)

hFE IC Characteristics (typ.)


10000 5000 1000 500 100 50 10 0.02

(VCE = 2V)

hFE IC Temperature Characteristics (typ.)


10000 5000
12 5C

j-a t

Characteristics

(VCE = 2V)

Typ

hFE

hFE

1000 500 100 50

25

C
C

(C/W)
j-a

1 0.5

5 5

0.1

0.5

10

20 0.02

0.1

0.5 1.0

10

0.1

10

100

1000

IC (A)

IC (A)

t (ms)

f T IE Characteristics (typ.)
40 (VCE = 12V)

Safe Operating Area (single pulse)


20 10

PC Ta Derating
40
natural air cooling Silicone grease Aluminum heatsink Unit: mm

Typ
30

1ms

s 10m s 0m 10

DC

30
W

fT (MHz)

PC (W)

ith

IC (A)

in

20

0.5

20

fin ite he at si nk

0.1 10 0.05

Without heatsink natural air cooling

10

150

50 50 2 100 2 0
Without heatsink

150
100

0 0.01

0.05 0.1

0.5 1

0.01 1

10

50 100

500

25

50

75

100

125

150

IE (A)

VCE (V)

Ta (C)

89

Power Transistor 2SD2382

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 655 655 6 6 (pulse 10) 1 30 (Tc=25C) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 700 to 3000 0.15max 1.5max 200min

(Ta=25C) Unit A A V V V mJ

External Dimensions TO220F (full-mold)


10.0 4.2 2.8

3.3

C0.5

8.4
a b

16.9

Typical Switching Characteristics


VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 30 IB2 (mA) 30 t on (s) 0.25 t stg (s) 0.8 tf (s) 0.35
2.54 2.2

1.35 1.35 0.85 2.54

3.9

0.8

2.6

(13.5)

0.45

B C E

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


10 30mA 8 10mA 20mA

VCE (sat) IB Temperature Characteristics (typ.)


0.75 (IC = 1.5A)

IC VBE Temperature Characteristics (typ.)


6 5

IC (A)

IC (A)

6 5mA 4 3mA IB = 1mA

VCE (sat) (V)

0.5 Ta = 55C 25C 75C 125C

4 3 2 1 Ta=55C 25C 75C 125C

0.25

10

50 100

400

0.5

1.0

1.5

VCE (V)

IB (mA)

VBE (V)

hFE IC Characteristics (typ.)


5000 Typ 1000

(VCE = 1V)

hFE IC Temperature Characteristics (typ.)


5000 (VCE = 1V)

j-a t

Characteristics

1000

hFE

hFE

500

500

100 50 30 0.01

100 50 30 0.01

Ta = 55C 25C 75C 125C 0.05 0.1 0.5 1 5 10

(C/W)
j-a

1 0.5 0.3 1 5 10 50 100 500 1000

0.05 0.1

0.5

10

IC (A)

IC (A)

t (ms)

f T IE Characteristics (typ.)
30 25 20 Typ (VCE = 1V)

Safe Operating Area (single pulse)


20
c mse 0.5 ec 1ms c e

PC Ta Derating
30
natural air cooling Silicone grease Aluminum heatsink Unit: mm

10 5
10

10

ms

D.

fT (MHz)

(T

20
W

0m se

PC (W)

IC (A)

ith

15 10 5 0 0.01

25

in

1 0.5
Without heatsink natural air cooling

10

15 0 100 150 1 00 2 2 50 5 02
Without heatsink

fin ite he at si nk

0.1 0.05 0.1 0.5 1 5 10

10

50

100

50

100

150

IE (A)

VCE (V)

Ta (C)

90

Power Transistor 2SD2633

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 200 150 6 8 1 35 (Tc=25C) 2 (Ta=25C, No Fin) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) VBE (sat) Test Conditions VCB=200V VEB=6V IC=50mA VCE=2V, IC=6A IC=6A, IB=6mA IC=6A, IB=6mA Ratings 100max 10max 150min 2000min 1.5max 2.0max

(Ta=25C) Unit A mA V V V

External Dimensions TO220F (full-mold)


10.0 4.2 2.8

3.3

C0.5

8.4 a b 16.9

(13.5)

1.35 1.35 0.85 2.54 2.2 2.54

3.9

0.8

2.6

0.45

B C E

a) Part No. b) Lot No. (Unit: mm)

91

Power Transistor FP812

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 120 120 6 8 (pulse 12) 3 35 (Tc=25C) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) Test Conditions VCB = 120V VEB = 6V IC = 50mA VCE = 4V, IC = 3A IC = 3A, IB = 0.3A Ratings 10max 10max 120min 70min 0.3max

(Ta=25C) Unit A A V V

External Dimensions TO220F (full-mold)


10.0 4.2 2.8

3.3

C0.5

8.4
a b

16.9

VCC (V) 12

RL () 4

IC (A) 3

VBB1 (V) 10

VBB2 (V) 5

IB1 (mA) 30

IB2 (mA) 30

t on (s) 2.5

t stg (s) 0.4

tf (s) 0.6
2.54 2.2

1.35 1.35 0.85 2.54

3.9

Typical Switching Characteristics

0.8

2.6

(13.5)

0.45

B C E

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


8

VCE (sat) I B Characteristics (typ.)


100mA

IC VBE Temperature Characteristics (typ.)


8 (VBE = 4V)

2 Ic = 3A

mA

00

0m

5 1

0m

75mA

VCE (sat) (A)

50mA

Ic = 5A

IC (A)

IC (A)

4 25mA 2

4 Tc = 40C 25C 75C 125C 0 0.5 1.0 1.5

IB = 10mA

Ic = 1A

0 5

10

50 100

500 1000 2000

VCE (V)

IB (mA)

VBE (V)

hFE IC Characteristics (typ.)


500 (VCE = 4V)

hFE IC Temperature Characteristics (typ.)


500 Tc = 125C (VCE = 4V)

j-a t

Characteristics
C )

50 10 5
NO = (Ta 25

(C/W)

Typ

hFE

hFE

75C 25C 100 55C 50

Fin

Tc = 25C

j-a

100 50 30 0.01
0.05 0.1 0.5 1 5 8

1 0.5 Single Pulese 0.1 0.05 0.0002 0.001

30 0.01

0.05 0.1

0.5

5 8

0.01

0.1

10

100

IC (A)

IC (A)

t (sec)

f T IE Characteristics (typ.)
30 (VCE = 12V)

Safe Operating Area (single pulse)


12 10
1m se c

PC Ta Derating
40
natural air cooling Silicone grease Aluminum heatsink Unit: mm

10

Typ 20

c se c m se 0m 10

D.

30
W ith

(T

fT (MHz)

IC (A)

C)

PC (W)

=2

in fin

1 0.5

20
20 0 20 0 2

ite he at si

10

nk

10
natural air cooling Without heatsink

100

10

02

Without heatsink

0 0.01

0.05 0.1

0.5

10

0.1 3

10

50

100 150

50

100

150

IE (A)

VCE (V)

Ta (C)

92

Power Transistor MN611S

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 11510 11510 6 6 (pulse 10) 1 50 (Tc=25C) 1.2 (Ta=25C, No Fin) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC ES/B Test Conditions VCB=105V VEB=6V IC=50mA VCE=1V, IC=1A IC=1.2A, IB=12mA I FEC=6A L=10mA min Ratings typ max 10 10 125 1500 0.12 1.5

(Ta=25C) Unit A A V V V mJ

External Dimensions TO220S

10.20.3 (1.4)

4.440.2 1.30.2

105 400

115 800 0.08 1.25

10.0 0.5

+0.3

a
8.60.3

1.6
+0.2

b
(1.5) 0.1 0.1

45

3.0 0.5

+0.3

1.270.2 0.86 0.1 1.20.2 2.540.5 2.540.5


+0.2

Typical Switching Characteristics


VCC (V) 12 RL () 12 VBB1 (V) 10 VBB2 (V) 5 IC (A) 1 IB1 (mA) 30

0.40.1

tf IB2 ton tstg (mA) (s) (s) (s) 30 0.2typ 5.7typ 0.4typ

a) Part No. b) Lot No.

IC VCE Characteristics (typ.)


8 7 6 (Ta = 25C)
30mA 20mA

VCE (sat) IB Characteristics (typ.)


0.75 IC = 2A (Ta = 25C)

(Unit: mm)

VCE (sat) (V)

IC (A)

5 4 3

10mA 5mA 3mA

0.5

IC = 1.2A

0.25 IC = 0.5A 0

2 1 0 0 1 2 3 4 5 6
IB = 1mA

10

100

1000

VCE (V)

IB (mA)

VCE (sat) IB Temperature Characteristics (typ.) IC VBE Temperature Characteristics (typ.)


0.75 (IC = 1.2A) 7 6 (VCE = 1V)

IFEC VFEC Temperature Characteristics (typ.)


7 6

VCE (sat) (V)

0.5

0.25

Ta = 150C 125C 75C 25C 55C

4 3 2 1

IFEC (A)

IC (A)

Ta = 150C 125C 75C 25C 55C

5 4 3 2 1 0 Ta = 150C 125C 75C 25C 55C

0 0 10 100 1000

0 0 0.5 1.0 1.5

0.5

1.0

1.5

IB (mA)

VBE (V)
(Ta = 25C) (VCE = 1V)

VFEC (V)

hFE IC Characteristics (typ.)


5000

hFE IC Temperature Characteristics (typ.)


5000 (VCE = 1V)

ton tstg t f IC Characteristics (typ.)


10

1000

typ

ton tstg tf (sec)

tstg
Ta = 25C VCC = 12V IB1 = IB2 = 30mA

1000

hFE

hFE

100 30 0.01

100 30 0.01

Ta = 150C 125C 75C 25C 55C 0.1 1 10

tf
0.1 0

ton
1 2 3

0.1

10

Ic (A)

Ic (A)

Ic (A)

(C/W)

j-c j-a t
50

Characteristics (Single pulse)


(Tc = 25C)

Safe Operating Area (Single pulse)


20 10 (Ta = 25C)

PT Ta Derating
60 50 40

10

j-a FR4 (70 100 1.6mm) Use substrate

j-c j-a

j-c 1

PT =50s PT =500s PT =1ms PT =10ms

PC (W)

IC (A)

30 20

0.1 0.001

Without heatsink

0.01

0.1

10 0.1 1 10 100 200

10 0 0 25 50 75 100 125 150

t (s)

VCE (V)

Ta (C)

93

Power Transistor MN638S

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 38050 38050 6 6 (pulse 10) 1 60 (Tc=25C) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO V(BR) CEO hFE VCE (sat) Test Conditions VCB=330V VEB=6V IC=25mA VCE=2V, IC=3A IC=4A, IB=20mA Ratings 10max 20max 330 to 430 1500min 1.5max

(1.4)

(Ta=25C) Unit A mA V V

External Dimensions TO220S

10.20.3

4.440.2 1.30.2

a
10.0 0.5
+0.3

1.6 (1.5)
+0.2

8.60.3

b
0.10.1

3.0 0.5

+0.3

1.270.2 0.86 0.1 1.20.2 2.540.5 2.540.5


+0.2

0.40.1

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


10 150mA 120mA

VCE (sat) I B Characteristics (typ.)


3
20m A

IC VBE Temperature Characteristics (typ.)


10 (VBE =4V)

A 90m 0mA 6

A 18m 4mA

VCE (sat) (V)

IC (A)

2mA

IC (A)

ure rat

mp

(C

as

se

tem

1A
5 C

12

C ( Ca

0.2 0.5

10

50 100 200

0 0

1.0

3 0 C

25

(C a s

e te m pe

te

pe

3A

er

5A

ra tu

IB=1mA

at

re )

ur

IC = 7A

e)

2.0

2.4

VCE (V)

IB (mA)

VBE (V)

hFE IC Characteristics (typ.)


10000 5000 1000 500 100 50 10 0.02 (VCE = 2V)

hFE IC Temperature Characteristics (typ.)


Typ
10000 5000
12 5C

(VCE = 2V)

j-c j-a (C/W)

j-c

j-a t

Characteristics

100

hFE

hFE

1000 500 100 50

25

C
5C

10

j-a j-c

0.1

0.5

10

20 0.02

0.1

0.5 1.0

10

0.1 0.001

0.01

0.1

10

IC (A)

IC (A)

t (s)

94

Surface-mount Power Transistor SSD103

Absolute Maximum Ratings (Ta=25C)


Symbol Ratings VCBO 655 655 VCEO VEBO 6 IC 6 IC (pulse) 10 (Pw 1mS, Duty 25%) 10 IB 1.5 *1 PC Tj 150 Tstg 55 to +150 Unit V V V

Electrical Characteristics
Symbol Test Conditions

(Ta=25C)

External Dimensions SOP8


0.70.2 5.4Max
8
a

min

Ratings typ

0.42 0.05

*1: FR4 70mm100mm 1.6mm

5.00.2

1.50.2

(drain heatsink copper foil area 2525mm)

a) Part No. b) Corporate mark c) Lot No. d) Control No. (Unit: mm)

IC VCE Characteristics (typ.)


7 6 5
30mA 20mA 10mA

VCE (sat) I C Temperature Characteristics (typ.)


0.75
IC/IB = 100

IC VBE Temperature Characteristics (typ.)


6 5
(VCE = 1V)

VCE (sat) (V)

0.5
Ta = 55C 25C 75C 125C

IC (A)

5mA 3mA

IC (A)

4 3 2 1 0

3 2 1

Ta = 125C 75C 25C 55C

0.25

IB = 1mA

0 0.01

0 0.1 1 10 0 0.5 1.0 1.5

VCE (V)

IC (A)

VBE (V)

hFE IC Temperature Characteristics (typ.)


2000 1000 500
(VCE = 1V)

ton tstg t f IC Characteristics (typ.)


5

tstg

ton tstg tf (S)

1 0.5

VCC = 12V IB1 = IB2 = 30mA

hFE

100 50 0.01 0.1

Ta = 125C 75C 25C 55C

tf
0.1

ton
0 1 2 3

10

IC (A)

IC (A)

Safe Operating Area


20 10 5

(Single pulse)

Equivalent Circuit Diagram


0.5m s

5, 6, 7, 8

IC (A)

1 0.5
natural air cooling Without heatsink

2, 3, 4
50 100

0.1 1 5 10

VCE (V)

0.50.2

A A W C C

ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b

VCB = 60V, I E = 0A VEB = 6V, IC = 0A IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA I FEC = 6A L = 10mH

80

V V mJ
1.270.25

c d

4.40.2

4.7Max

0 to 0.1
4
+0.15

0.17 0.05

+0.15

6.20.3

60 400

65 800 0.11 1.25

max 10 10 70 1500 0.15 1.5

Unit

A A V

0 to 10
5

1m s
s 10m

95

Surface-mount Power Transistor Array SDA03

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 60 60 6 6 (pulse 12) 1 3 (No Fin) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) Test Conditions VCB = 60V VEB = 6V IC = 25mA VCE = 4V, IC = 2A IC = 2A, IB = 0.1A Ratings 10max 10max 60min 100min 0.4max

(Ta=25C) Unit A A V V

External Dimensions SMD-16A

1.00.3

0.25

0.890.15 0.75 0.05


+0.15

2.540.25

16 9.80.3 6.8max 3.00.2 6.30.2 8.00.5

a b
Pin 1 20.0max
0.2

Typical Switching Characteristics


VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 50 IB2 (mA) 50 t on (s) 0.4 t stg (s) 1.75 tf (s) 0.22

0 to 0.15

+0.15 0.3 0.05

19.56

4.0max

1.40.2

3.60.2

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics
6 5 4
200mA 100mA 50mA 30mA

VCE (sat) IC Temperature Characteristics (typ.)


3
IC / IB = 20

IC VBE Temperature Characteristics (typ.)


6 5
(VCE = 4V)

VCE (sat) (V)

IC (A)

3 2 1 0

20mA

IC (A)

Ta = 150C 75C 25C 55C

4 3 2 1
Ta = 150C 75C 25C 55C

10mA IB = 5mA

0 0.05

0.1

10

0.5

1.0

1.5

VCE (V)

IC (A)

VBE (V)

hFE IC Temperature Characteristics


1000
VCE = 4V

ton tstg t f IC Characteristics


5

ton

j-a t

Characteristics (Single pulse)

50

(Ta = 25C)

j-a (C/W)

500

ton tstg tf (sec)

1 0.5

hFE

VCC = 12V IB1 = IB2 = 50mA

10 5

tf

100 50 30 0.01 0.1

Ta = 150C 75C 25C 55C

0.1 0.05 0.5 0.1 0.5 1

tstg
5 10

1 0.3 0.001

10

0.01

0.1

IC (A)

IC (A)

t (s)

Safe Operating Area (Single pulse)


20 10
10 m

PT Ta Derating
4

Equivalent Circuit Diagram

1m s
3
s
Without heatsink

20

16

14

12

10

IC (A)

PT (W)

1 0.5
natural air cooling Without heatsink

15

13

11

0.1 3

10

50

100

50

100

150

VCE (V)

Ta (C)

96

Surface-mount Power Transistor Array SDA04

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 60 60 6 6 (pulse 12) 1 2.5 (No Fin) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) Test Conditions VCB = 60V VEB = 6V IC = 25mA VCE = 4V, IC = 2A IC = 2A, IB = 0.1A Ratings 10max 10max 60min 100min 0.4max

(Ta=25C) Unit A A V V

External Dimensions SMD-16A

1.00.3

0.25

0.890.15 0.75 0.05


+0.15

2.540.25

16 9.80.3 6.8max 3.00.2 6.30.2 8.00.5

a b
Pin 1 20.0max
0.2

Typical Switching Characteristics


VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 50 IB2 (mA) 50 t on (s) 0.4 t stg (s) 1.75 tf (s) 0.22

0 to 0.15

+0.15 0.3 0.05

19.56

4.0max

1.40.2

3.60.2

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics
6 5 4
200mA 100mA 50mA 30mA

VCE (sat) IC Temperature Characteristics (typ.)


3
IC / IB = 20

IC VBE Temperature Characteristics (typ.)


6 5
(VCE = 4V)

VCE (sat) (V)

IC (A)

3 2 1 0

20mA

IC (A)

Ta = 150C 75C 25C 55C

4 3 2 1
Ta = 150C 75C 25C 55C

10mA IB = 5mA

0 0.05

0.1

10

0.5

1.0

1.5

VCE (V)

IC (A)

VBE (V)

hFE IC Temperature Characteristics


1000
VCE = 4V

ton tstg t f IC Characteristics


5

ton

j-a t

Characteristics (Single pulse)


(Ta = 25C)

50

500

ton tstg tf (sec)

j-a (C/W)

1 0.5

hFE

VCC = 12V IB1 = IB2 = 50mA

10 5

tf

100 50 30 0.01 0.1

Ta = 150C 75C 25C 55C

0.1 0.05 0.5 0.1 0.5 1

tstg
5 10

1 0.3 0.001

10

0.01

0.1

IC (A)

IC (A)

t (s)

Safe Operating Area (Single pulse)


20 10
10 m

PT Ta Derating
4

Equivalent Circuit Diagram

1m s
3
s
Without heatsink

20

16

10

PT (W)

IC (A)

1 0.5

15

1
natural air cooling Without heatsink

0.1 3

10

50

100

50

100

150

VCE (V)

Ta (C)

97

Surface-mount Power Transistor Array SDC09

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 655 655 6 6 (pulse 10 *) 1 2.8 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min

(Ta=25C) Unit A A V V V mJ

External Dimensions SMD-16A

1.00.3

0.25

0.890.15 0.75 0.05


+0.15

2.540.25

16 9.80.3 6.8max 3.00.2 6.30.2 8.00.5

a b
Pin 1 20.0max
0.2

0 to 0.15

+0.15 0.3 0.05

* PW 100s, Duty 1%
4.0max 3.60.2

19.56

1.40.2

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics
8 7 6 5 IB = 30mA 20mA 10mA 5mA 3 2 1 0 0 1 2 3 1mA 3mA

VCE (sat) IC Temperature Characteristics (typ.)


0.7 IC /IB =100 0.6 0.5

IC VBE Temperature Characteristics (typ.)


6 5 4 Ta=150C 100C 75C 25C 55C (VCE = 4V)

VCE (sat) (V)

IC (A)

IC (A)
0.01 0.1

0.4 0.3 0.2 0.1 0 0.0001

Ta=150C 100C 75C 25C 55C

3 2 1 0

0.001

0.2

0.4

0.6

0.8

1.0

1.2

VCE (V)

IC (A)

VBE (V)

hFE IC Temperature Characteristics


5000 VCE=1V

ton tstg t f IC Characteristics


10

j-a t

Characteristics (Single pulse)


(Use substrate 42311m)

10

ton tstg tf (sec)

tstg
1 VCC =12V IB1= IB2 =30mA

1000

hFE

ton tf

j-a (C/W)

100 50 0.01

Ta=150C 100C 75C 25C 55C 0.1 1 10

0.1 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 0.05 0.1 1 10 100 1000

IC (A)

IC (A)

t (ms)

Safe Operating Area (Single pulse)


20 10 5 1ms 1 0.5 10ms 0.5 ms Ta=25C

PT Ta Derating
6 50 50 1.6mm Use substrate

Equivalent Circuit Diagram

4 13 15 16

9 10 12

PT (W)

42311.0mm Use substrate

IC (A)

14

11

1 0.1 0.05 0.5 1 5 10 50 100 0 50 0 50 100 150


2 7

VCE (V)

Ta (C)

98

Power Transistor Array SLA8004

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings NPN PNP 60 55 60 55 6 6 12 12 3 3 5 (Tc=25C, No Fin) 40 (Tc=25C) 150 55 to +150 Unit V V V A A W W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC NPN
Test Conditions Ratings

(Ta=25C) PNP
Test Conditions Ratings

External Dimensions SLA 12pin (LF817)


310.2 24.40.2 16.40.2

Unit A mA V
3.20.15 9.90.2 3.20.15 3.8 4.80.2 1.70.1

VCB = 60V 100max VEB = 6V 60max IC = 25mA 60min VCE = 1V, IC = 3A 150min IC = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max

VCB = 55V 100max VEB = 6V 60max IC = 25mA 55min VCE = 1V, I C = 3A 80min I C = 6A, IB = 0.3A 0.35max IFEC = 10A 2.5max

12.90.2

160.2

V V

50.5

a
1.20.15

2.450.2
(Root dimension)

4 (R1) R-end 0.85 0.1 1.450.15 (3)


+0.2

0.55 0.1 40.7

+0.2

11 P2.540.1= (27.94)
(Root dimension)

31.30.2

IC VCE Characteristics (typ.)


12
I 20 B = 0m A
m 150

IC VCE Characteristics (typ.)


(PNP) 12 (N PN )
1 2 3 4 5 6 7 8 9 10 11 12

0m

10 8

100mA

10 8

20

m 50

100mA

a) Part No. b) Lot No. (Unit: mm)

60mA

IC (A)

IC (A)

60mA
6 4 2 0
40mA

40mA
6 4 2 0

20mA IB = 10mA

20mA

10mA

VCE (V)

VCE (V)
(VC E = 1V) (PNP)

hFE IC Characteristics (typ.)


300 100

hFE IC Characteristics (typ.)


400

(VCE = 1V) (N PN )

Typ
100

Typ

hFE

10

hFE
2 0.02

50

10 5 3 0.02

0.1

IC (A)

10 12

0.1

10 12

IC (A)

hFE IC Temperature Characteristics (typ.)


300 125C 100 (VC E = 1V) (PNP) 25C 30C

hFE IC Temperature Characteristics (typ.)


400 (VCE = 1V) (N PN )

C 125
100 50

hFE

10

hFE

C 25 C 0 3

10 5 3 0.02

2 0.02

0.1

IC (A)

10 12

0.1

10 12

IC (A)

VCE (sat) IB Characteristics (typ.)


1.4 (PNP)

VCE (sat) IB Characteristics (typ.)


1.3 (N PN )

Equivalent Circuit Diagram

1.0 1.0 IC = 12A 9A 6A 0.5 1A


3A
6A
R2

VCE (sat) (V)

VCE (sat) (V)

5 R1: 500 Typ. R2: 500 Typ. 3 6 2 R1 1 11 7 10

3A

0.5
12A

12

9A

IC = 1A
0 7 10 100 1000 3000 0 5 10

100

1000

3000

IB (mA)

IB (mA)

99

Surface-mount Power Transistor Array SPF0001

Absolute Maximum Ratings


Symbol VCBO VCEO VEBO IC IB PT * Tj Tstg Ratings 11510 11510 6 6 (pulse 10) 1 2.5 (Ta = 25C) 150 55 to +150

(Ta=25C) Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Test Conditions VCB = 105V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.2A, IB = 12mA I FEC = 6A L = 10mH min Ratings typ max 10 10 125 1500 0.12 1.5

(Ta=25C) Unit

External Dimensions SPF 20pin


14.740.2

45

V V mJ

1 1.270.25 0.4 0.05


+0.15

10 2.50.2 0.250.05
+0.15

* Use glass epoxy substrate (FR4) 70mm 100mm1.6mm

(11.43)

10

(3.05)

hFE IC Temperature Characteristics (typ.)


1000 500
150C 25C

VCE (sat) IB Temperature Characteristics (typ.)


0.5

(4.7)

F1

F2

20.2

4-( 0.8)

7.50.2

20

(2.4) (13.54)

11

(VCE = 1V)

(IC = 1.2A)

a) Part No. b) Lot No. (Unit: mm)

hFE

100 50

VCE (sat) (V)

55C

0.25

150C 25C 55C

10 0.1

0.5

56

0 0.001

0.01

0.1

IC (A)

IB (A)

IC VEC Temperature Characteristics (typ.)


10

IC VBE Temperature Characteristics (typ.)


6 5 4

(VCE = 1V)

IC (A)

IC (A)

6
150C 25C 55C

3 2 1 0

150C 25C 55C

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VEC (V)

VBE (V) thermal resistance characteristics Transient (82361mm at the time of mounting the
100
0. 1m s
recommended pattern of the glass epoxy board)

Safe Operating Area (single pulse)


20 10

Equivalent Circuit Diagram

2 circuits operate

5m

1 circuits operate 2 circuits operate 1 circuits operate

10

j-a

(C/W)

F1
j-f

F2

IC (A)

j-a j-f

3
0.1

18,19
0.1 0.01 0.00001 0.0001 0.001

12,13

10

100

200

0.01

0.1

10

100

VCE (V)

Power time (s)

100

10.50.3

105 400

115 800 0.08 1.25

A A V

13.040.2 20 11

1.0 0.05 Fin thickness

+0.1

Power Transistor Array STA315A

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 355 365 6 2 (pulse 3*) 30 3 (Ta=25C) 13.5 (Tc=25C) 150 55 to +150 Unit V V V A mA W W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC RB RBE Es/b Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800120 2.00.4 50min

11.30.2

2.30.2

9.00.2

(Ta=25C) Unit A mA V

External Dimensions STA3 (LF400A)


20.20.2

b a

0.50.15

* PW 1ms, Duty 25%

L = 10mH, single pulse

C1.50.5

Typical Switching Characteristics


VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 5 IB2 (mA) 0 ton (s) 1.0 tstg (s) 8.5

tf (s) 2.5

1 E

2 B

3 C

4 B

5 C

6 B

7 C

8 E

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


A

VCE (sat) IB Temperature Characteristics


0.5
8mA 5mA (IC = 0.5A)

VCE (sat) IC Temperature Characteristics


3
IC/IB = 100

30m

12

VCE (sat) (V)

IC (A)

3mA 2mA

VCE (sat) (V)

2
Ta = 125C 75C 25C 40C

0.25

IB = 1mA

Ta = 125C 75C 25C 40C

0 0 1 2 3 4 5 6 1 10 100 400

0.5

1.20.2

4.00.2

V V V k mJ

4.70.5

0.50.15 1.00.25
7 2.54=17.780.25

(2.54)

VCE (V)

IB (mA)

IC (A)

hFE IC Temperature Characteristics


3000
(VCE = 4V)

ton tstg t f IC Characteristics (typ.)


50

j-a t

Characteristics
Single pulse

20

ton tstg tf (S)

hFE

500
Ta = 125C 75C 25C 40C

tf
1 0.5 0.1

(C/W)
j-a

1000

10

tstg

VCC = 12V IB = 5mA IB = 0A

10 5

ton

100 50 0.01 0.1

1 0 0.5 1.0 1.5 2.0 1 10 100 1000

0.5

IC (A)

Ic (A)

t (ms)

Safe Operating Area (single pulse)


5 (per element)

PT Ta Derating
20

Equivalent Circuit Diagram

1m

10

s
3 5 7

PT (W)

IC (A)

1 0.5

10

ith

inf

ini

te

he

at

sin

2
k

RB RBE

1
Without heatsink natural air cooling
Withou t heat

sink

0.1 1 5 10 50

50

100

150

VCE (V)

Ta (C)

101

Power Transistor Array STA335A

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 355 355 6 3 1 2.5 (Ta=25C) 12 (Tc=25C) 150 55 to +150 Unit V V V A A W W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) Es/b Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.5A IC = 1A, IB = 5mA L = 10mH, single pulse Ratings 10max 10max 355 500min 0.5max 150min

11.30.2

2.30.2

9.00.2

(Ta=25C) Unit A A V V mJ

External Dimensions STA3 (LF400A)


20.20.2

b a

4.70.5

0.50.15

Typical Switching Characteristics


VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 5 IB2 (mA) 5 ton (s) 1.3 tstg (s) 4.7 tf (s) 1.2
C1.50.5

1.00.25
72.54=17.780.25

(2.54)

0.50.15

2 C

3 B

4 E

5 E

6 B

7 C

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


A 10 m A

VCE (sat) IB Temperature Characteristics


1
5mA 4mA 3mA (IC = 1A)

IC VBE Temperature Characteristics (typ.)


4
VCE = 4V

15m

8m

6m

VCE (sat) (V)

2mA IB =1mA

IC (A)

IC (A)

0.5

Ta = 125C 75C 25C 55C

Ta = 55C 25C 75C 125C

0 0.002

0.01

0.05 0.1

0.4

0.5

1.0

1.20.2

4.00.2

1.5

VCE (V)

IB (A)

VBE (V)

hFE IC Temperature Characteristics (typ.)


5000
(VCE = 4V)

ton tstg t f IC Characteristics (typ.)


20

j-a t

Characteristics
Single pulse

tstg

20
VCE = 12V IB1 = IB2 = 5mA

ton tstg tf (S)

10 5

10

hFE

1000 500
Ta = 125C 75C 25C 55C

(C/W)
tf ton
0.1 0.5 1 5
j-a

1 0.5

1 0.5

100 0.01

0.05 0.1

0.5

0.3 0.05

0.1 0.1

10

100

1000

5000

IC (A)

Ic (A)

t (ms)

Safe Operating Area (single pulse)


10 5
10

PT Ta Derating
15

(per element)

Equivalent Circuit Diagram

1m

10
0m

s
W ith in fin ite

s
10

he

2
at si nk (A ll ci rc ui

DC

PT (W)

IC (A)

(T

ts

c=

op

25

er

5
Withou t heat sink (A

at

e)

0.5

ll circui

ts oper

ate)

4
150

0.2 2 5 10 50

50

100

VCE (V)

Ta (C)

102

Power Transistor Array STA415A

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PT Tj Tstg * PW 1ms, Duty Ratings 355 365 6 2 (pulse 3*) 30 4 (Ta = 25C) 18 (Tc = 25C) 150 55 to +150 25% Unit V V V A mA W W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC RB RBE Es/b Test Conditions VCB = 30V VEB = 6V IC = 25mA VCE = 4V, IC = 0.7A IC = 0.5A, IB = 5mA IC = 1A, IB = 5mA IFEC = 2A Ratings 10max 2.7max 31 to 41 400min 0.2max 0.5max 2.5max 800120 2.00.4 50min

0.2

0.2

9.0

0.2

(Ta=25C) Unit A mA V V V V k mJ

External Dimensions STA4 (LF412)


25.25
0.2

b a

11.3

3.5

0.5

2.3

1.0

0.25

0.5

0.15

(2.54) 0
0.3

0.3

9 2.54=22.86

0.05

0.15

Typical Switching Characteristics


VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 5 IB2 (mA) 0 ton (s) 1.0 tstg (s) 8.5 tf (s) 2.5

1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


A

VCE (sat) IB Temperature Characteristics


0.5
8mA 5mA (IC = 0.5A)

VCE (sat) IC Temperature Characteristics


3
IC /IB = 100

30m

12

VCE (sat) (V)

IC (A)

3mA 2mA

VCE (sat) (V)

2
Ta = 125C 75C 25C 40C

0.25

IB = 1mA

Ta = 125C 75C 25C 40C

0 0 1 2 3 4 5 6 1 10 100 400

0.5

0.5

1.2

4.0

L = 10mH, single pulse

C1.5

0.5

0.2

0.2

VCE (V)

IB (mA)

IC (A)

hFE IC Temperature Characteristics


3000
(VCE = 4V)

tontstgtf IC Characteristics (typ.)


50

j-a t

Characteristics
Single pulse

20

ton tstg tf (S)

hFE

500
Ta = 125C 75C 25C 40C

tf
1 0.5 0.1

(C/W)
j-a

1000

10

tstg

VCC = 12V IB = 5mA IB = 0A

10 5

ton

100 50 0.01 0.1

1 0 0.5 1.0 1.5 2.0 1 10 100 1000

0.5

IC (A)

Ic (A)

t (ms)

Safe Operating Area (single pulse)


5 (per element)

PT Ta Derating
20

Equivalent Circuit Diagram

1m

10

s
ith W

PT (W)

IC (A)

1 0.5

3
he at

in fin ite

10

2 1

RB RBE

si nk

10

Without heatsink natural air cooling

With

out h

eatsin

0.1 1 5 10 50

50

100

150

VCE (V)

Ta (C)

103

Power Transistor Array STA460C

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC ICP Ratings 6010 6010 6 6 10 (Pw 1ms, Du 50%) 3.2 (Ta = 25C) 18 (Tc = 25C) 150 40 to +15 Unit V V V A A

Electrical Characteristics
Symbol Test Conditions

(Ta=25C)

External Dimensions STA4 (LF412)


25.25
0.2

min

Ratings typ

PT Tj Tstg

W C C

ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b

VCB = 50V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse

200

V V mJ

3.5

0.5

50 700

60 1500 0.09 1.25

max 10 10 70 3000 0.15 1.5

Unit

A A V

0.2

0.2

11.3

9.0

0.2

b a

2.3

1.0

0.25

0.5

0.15

(2.54)

0 92.54 = 22.86

0.3

0.3

0.05

0.15

1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


10

hFE IC Characteristics (typ.)


5000

hFE IC Temperature Characteristics (typ.) VCE (sat) IC Temperature Characteristics (typ.)


5000 Ta = 125C 75C 25C 55C Ta = 55C 25C 75C 125C

(VCE = 1V)
typ

(VCE = 1V)

0.5

0.75

(IC /IB = 100)

9 7

0m

IB

=3

8 6 5 4 3 2 1 0 0

20

mA

IC (A)

10m

h FE

5mA
3mA

h FE

500

500

VCE (sat) (V)

1000

1000

0.5

0.25

1mA

100 50

100 50 0.05 0.1 0.5 1 5 10 30 0.01 0.05 0.1 0.5 1 5 10 0 0.01 0.05 0.1 0.5 1 5 10

30 0.01

VCE (V)

IC (A)

IC (A)

IC (A)

VCE (sat) IB Temperature Characteristics (typ.)


0.75

IC VBE Temperature Characteristics (typ.)


6 5

j-a PW
20 10 5

Characteristics

(VCE = 1V)

VCE (sat) (V)

j-a (C/W)

0.5

IC (A)

3 2
125 C

1 0.5

0.25 IC = 3A 0.5A 0 1 5 10 50 100 500 1.5A

1 0

75C 0

25C 55C

Ta =

0.1 1.0 1.5 0.05 0.1 0.5 1 5 10 50 100 500 1000 2000

0.5 VBE (V)

IB (mA)

PW (ms)

Equivalent Circuit Diagram


PT Ta Derating
20
Silicone grease used Vertical self-excitation

Safe Operating Area


20 10

15

5
ini te

PT (W)

IC (A)

10

1 0.5

5
Without heatsink

0.1 Without heatsink 0 55 0 50 100 150 0.05 0.5


Ta=25C

Single pulse

4
10 50 100

Ta (C)

VCE (V)

104

1.2

4.0

C1.5

0.5

0.2

0.2

ms 0.5

1m s

10m

ith W inf he at sin k

Power Transistor Array STA461C

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 655 655 6 6 (pulse 10) 1 3.2 (Ta = 25C) 18 (Tc = 25C) 150 55 to +150 Unit V V V A A W W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min

0.2

0.2

9.0

0.2

(Ta=25C) Unit A A V V V mJ

External Dimensions STA4 (LF400B)


25.25
0.2

b a

11.3

4.7

0.5

2.3

1.0

0.25

0.5

0.15

(2.54)

Typical Switching Characteristics


VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 30 IB2 (mA) 30 ton (s) 0.2 t stg (s) 3.9 tf (s) 0.2
C1.5
0.5

9 2.54=22.86

0.05

0.15

0.2

1 2 3 4 B C E

7 8 9 10 B C E

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


7 6 5
30mA 20mA 10mA

VCE (sat) IC Temperature Characteristics (typ.)


0.75
IC / IB = 100

IC VBE Temperature Characteristics (typ.)


6 5
(VCE = 1V)

VCE (sat) (V)

0.5
Ta = 55C 25C 75C 125C

IC (A)

5mA 3mA

IC (A)

4 3 2 1 0

3 2 1

Ta = 125C 75C 25C 55C

0.25
IB = 1mA

0 0.01

0 0.1 1 10 0 0.5 1.0 1.5

VCE (V)

IC (A)

VBE (V)

hFE IC Temperature Characteristics (typ.)


2000 1000 500
(VCE = 1V)

ton tstg t f IC Characteristics


5

j-a t

Characteristics
Single pulse

10

tstg

tontstgtf (S)

1 0.5

VCC = 12V IB1 = IB2 = 30mA

(C/W)

1 0.5

hFE

100 50 0.01 0.1

Ta = 125C 75C 25C 55C

tf
0.1

j-a

ton
0 1 2 3

0.1 0.05 0.1 1 10 100 2000

10

IC (A)

Ic (A)

t (ms)

Safe Operating Area (single pulse)


20

PT Ta Derating
20

Equivalent Circuit Diagram

10 5

15

PT (W)

IC (A)

10

1 0.5
Without heatsink natural air cooling

2
5
Withou t heat sink

4
100 150

0.1 1 5 10 50 100

50

VCE (V)

Ta (C)

0.5

1.2

4.0

0.2

0.5m s

1m s
10m s

ith W ite fin in nk si at he

105

Power Transistor Array STA463C

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PT Tj Tstg Ratings 11510 11510 6 6 (pulse 10) 1 3.2 (Ta=250C) 18 (Tc=25C) 150 55 to +150 Unit V V V A A W W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Test Conditions VCB = 105V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.2A, IB = 12mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 105 to 125 400 to 1500 0.12max 1.5max 45min

0.2

0.2

9.0

0.2

(Ta=25C) Unit A A V V V mJ

External Dimensions STA4 (LF400B)


25.25
0.2

b a

11.3

4.7

0.5

2.3

1.0

0.25

0.5

0.15

(2.54)

Typical Switching Characteristics


VCC (V) 12 RL () 12 IC (A) 1 VBB1 (V) 10 VBB2 (V) 5 IB1 (mA) 30 IB2 (mA) 30 t on (s) 0.2 t stg (s) 5.7 tf (s) 0.4
C1.5
0.5

9 2.54=22.86

0.05

0.15

0.2

1 2 3 4 B C E

7 8 9 10 B C E

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


8 7 6 5
30mA

VCE (sat) IC Temperature Characteristics (typ.)


0.75
I C /IB = 100

IC VBE Temperature Characteristics (typ.)


7 6
(VCE = 1V)

VCE (sat) (V)

20mA 10mA 5mA 3mA

5 0.5
Ta = 55C 25C 75C 150C

IC (A)

4 3 2 1 0 0 1 2 3 4

IC (A)

4 3 2 1

Ta = 150C 75C 25C 55C

0.25

IB = 1mA

0 0.01

0 0.1 1 5 0 0.5 1.0 1.5

VCE (V)

IC (A)

VBE (V)

hFE IC Temperature Characteristics (typ.)


2000 1000
(VCE = 4V)

ton tstg t f IC Characteristics


10 5

j-a t

Characteristics
Single pulse Dual transistor operated

tontstgtf (S)

tstg

100 50

0.5

1.2

500
Ta = 150C 75C 25C 55C

(C/W)

hFE

1 0.5

10 5 1 0.5 0.1 0.0001 0.001

Single transistor operated

100 50 30 0.01

tf
0.1

ton
0 1

VCC = 12V IB1 = IB2 = 30mA

j-a

0.1

10

0.01

0.1

10

100

4.0

0.2

1000

IC (A)

Ic (A)

t (s)

VCE (sat) IB Temperature Characteristics (typ.)


0.75
IC = 1.2A

PT Ta Derating
20 (Tc = 25C)

Equivalent Circuit Diagram

VCE (sat) (V)

15 0.5

3
nk si at he

ith W ite fin in

0.25

Ta = 150C 75C 25C 55C

PT (W)

10

2
5
Withou t heat sink

4
100 150

10

100

1000

50

IB (mA)

Ta (C)

106

Power Transistor Array STA464C

Absolute Maximum Ratings (Ta=25C)


Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 655 655 6 6 (pulse 10) 1 20 (Tc=25C) 4 (Ta=25C) 150 55 to +150 Unit V V V A A W C C

Electrical Characteristics
Symbol ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b Test Conditions VCB=60V VEB=6V IC=50mA VCE=1V, IC=1A IC=1.5A, IB=15mA IFEC=6A L=10mH min Ratings typ max 10 10 70 1500 0.15 1.5

(Ta=25C) Unit

External Dimensions STA4


25.25
0.2

80

V V mJ

3.5

0.5

60 400

65 800 0.09 1.25

11.3

A A V

0.2

0.2

9.0

0.2

b a

2.3

1.0

0.25

0.5

0.15

(2.54)

9 2.54= (22.86) (Root dimension) C1.5


0.5

0.05

0.15

0.2

1 2 3 4 5 6 7 8 9 10 E B C B C B C B C E

a) Part No. b) Lot No. (Unit: mm)

IC VCE Characteristics (typ.)


7 6 5
30mA 20mA 10mA

VCE (sat) IC Temperature Characteristics (typ.)


0.75
I C /IB = 100

IC VBE Temperature Characteristics (typ.)


6 5
(VCE = 1V)

VCE (sat) (V)

0.5
Ta= 55C 25C 75C 125C

IC (A)

5mA 3mA

IC (A)

4 3 2 1 0

3 2 1

Ta = 125C 75C 25C 55C

0.25
IB = 1mA

0 0.01

0 0.1 1 10 0 0.5 1.0 1.5

VCE (V)

IC (A)

VBE (V)

hFE IC Temperature Characteristics (typ.)


2000 1000 500
(VCE = 1V)

ton tstg t f IC Characteristics


5

tstg

tontstgtf (S)

1 0.5

VCC = 12V IB1 = IB2 = 30mA

hFE

100 50 0.01 0.1

Ta = 125C 75C 25C 55C

tf
0.1

ton
0 1 2 3

10

IC (A)

Ic (A)

Safe Operating Area (single pulse)


20

PT Ta Derating
20

Equivalent Circuit Diagram

10 5

15

PT (W)

3
k sin

0.5

IC (A)

10

1 0.5
Without heatsink natural air cooling

2 4 1 6 8 10

Witho

ut he

atsin

0.1 1 5 10 50 100

50

100

150

VCE (V)

Ta (C)

1.2

4.0

0.2

0.5m s
W

s 1m s 10m

ith fin in ite he at

107

MOS FET 2SK3710 (under development)

Features
ON resistance 0.0060 max. Built-in G-S bidirectional Zener diode Trench MOS structure

Applications
Power steering motor Various motors Replaces mechanical relays

External Dimensions
(1.4) (5)

TO220S

4.440.2

1.30.2

(0.45)

10.5 0.5

9.10.3

+0.3

2.60.2 0.1 0.1 3 0.5


+0.3 +0.2

Absolute Maximum Ratings (Ta=25C)


Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 60 20 70 140 130 400 150 55 to +150 Unit V V A A W mJ C C

Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH RDS (ON) VSD t rr Ciss Coss Crss Test Conditions ID = 100A VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250A VGS = 10V, ID = 35A ISD = 50A ISD = 25A, di/dt = 50A/s VDS = 10V VGS = 10V f = 1.0MHz min 60 10 100 4 6.0 1.5 Ratings typ max

(Ta=25C) Unit V A A V m V ns pF pF pF

1.20.2 (1.5)
+0.2 0.86 0.1

2.540.1

2.540.1

0.4

0.1

(1.3)

10.2 0.3

(5.4)

5.0 0.9 110 9400 1400 1100

Details of the back (S=2/1)

(Unit: mm)

108

1.40.2

MOS FET 2SK3711

Features
ON resistance 0.006 max. Built-in G-S bidirectional Zener diode Trench MOS structure

Applications
Power steering motor Various motors Replaces mechanical relays

External Dimensions
1.8 5.00.2 15.60.4 13.6 9.6

TO-3P
4.80.2 2.00.1

19.90.3 4.0

2.0

a b

3.20.1

Absolute Maximum Ratings (Ta=25C)


Symbol VDSS VGSS ID ID (pulse) PD EAS Tch Tstg Ratings 60 20 70 140 Unit V V A A W mJ C C

Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH RDS (ON) VSD t rr Ciss Coss Crss Test Conditions

(Ta=25C)
20.0 min 4.0 max

min 60

Ratings typ

max
10 100 4 6.0 1.2

Unit

2 3
1.05 0.1
+0.2 +0.2

130 To be defined 150 55 to +150

ID = 100A VGS = +20V VDS = 60V, VGS = 0V VDS = 10V, ID = 250A VGS = 10V, ID = 35A ISD = 50A ISD = 25A, di/dt = 50A/s VDS = 10V VGS = 10V f = 1.0MHz

2 5.0 0.9 70 7800 1250 990

* 1: PW 100s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,


RG = 50 * Contact your sales rep for the details of warranty at Tch = 175C

V A A V m V ns pF pF pF

0.65 0.1

5.450.1
15.80.2

5.450.1
1. Gate 2. Drain 3. Source

1.4

a) Part No. b) Lot No. (Unit: mm)

(1)

(2)

(3)

ID VDS Characteristics (typ.)


80 70 60

ID VGS Characteristics (typ.)


80 70 60

VDS VGS Characteristics (typ.)


1.0

Re (yfs) ID Characteristics (typ.)


500 Tc = 55C 25C 150C

(Ta = 25C)

(VDS = 10V)

(VDS = 10V)

0.8 100 Tc = 150C 100C 50C 25C 0C 40C 0 2 4 6 8 0.6 0.4 0.2

40 30 20 10 0 0

40 30 20 10

VGS = 5V

VDS (V)

ID (A)

ID (A)

50

10V 8V 6V

50

Re (yfs) (S)
20

ID = 70A 35A

10

0.5

1 0 5 10 15 1 10 70

VDS (V)

VGS (V)

VGS (V)

ID (A)

RDS (ON) I D Characteristics (typ.) Ta = 25C


7.0 6.0

RDS (ON) TC Characteristics (typ.) ID = 35A


12.0

j-c Pw
10

Characteristics

VGS = 10V

VGS = 10V

RDS (ON) (m)

RDS (ON) (m)

10.0

5.0 4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 60 70

j-c (C/W)

8.0 6.0 4.0 2.0 0 60 50 0 50 100 150

0.1

0.01 0.0001 0.001

0.01

0.1

10

100

ID (A)

Tc (C)

Pw (sec)

Capacitance VDS Characteristics IDR VSD Characteristics


50000

Safe Operating Area (single pulse) PD TC Characteristics


500
ID (pulse) max

(Ta = 25C)
VGS = 0V f = 1MHz

70 60 50

(Ta = 25C)

(Ta = 25C)
50 0 s( 1s
s( 1s

140 120

(With infinite heatsink)

Capacitance (pF)

100
(O N)

10000

Ciss

M LI

IT

ED

ho

t)

100

40 30 20 10

1000

Coss Crss

Tc = 150C 25C 55C

10

RD

PD (W)

1m

IDR (A)

IC (A)

80 60 40 20

ho t)
(1s

10 ms

ho t)

100

0 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

0.1 0.1

0 1 10 100 0 50 100 150

VDS (V)

VSD (V)

VDS (V)

Tc (C)

109

MOS FET 2SK3724 (under development)

Features
ON resistance 0.005 max. Built-in G-S bidirectional Zener diode Trench MOS structure

Applications
Power steering motor Various motors Replaces mechanical relays

External Dimensions
(1.4) (5)

TO220S

4.440.2

1.30.2

(0.45)

10.5 0.5

9.10.3

+0.3

2.60.2 0.1 0.1 3 0.5


+0.3 +0.2

Absolute Maximum Ratings (Ta=25C)


Symbol VDSS VGSS ID ID (pulse) PD EAS Tch * Tstg Ratings 60 20 80 160 Unit V V A A W mJ C C

Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH RDS (ON) VSD t rr Ciss Coss Crss Test Conditions

(Ta=25C)

1.20.2 (1.5)
+0.2 0.86 0.1

min 60

Ratings typ

max
10 100 2 5.0 1.5

Unit

2.540.1

2.540.1

0.4

0.1

60 To be defined 150 55 to +150

ID = 100A VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA VGS = 10V, ID = 40A ISD = 50A ISD = 25A, di/dt = 50A/s VDS = 10V VGS = 10V f = 1.0MHz

* Contact your sales rep for the details of warranty at Tch = 175C

4.0 0.9 To be defined 10600 1600 1300

Details of the back (S=2/1)

(Unit: mm)

110

1.40.2

V A A V m V ns pF pF pF

(1.3)

10.20.3

(5.4)

MOS FET 2SK3800

Absolute Maximum Ratings (Ta=25C)


Symbol VDSS VGSS ID ID (pulse)*1 PD EAS*2 Tch Tstg Ratings 40 20 70 140 Unit V V A A W mJ C C

Electrical Characteristics
Symbol Test Conditions

(Ta=25C)

External Dimensions TO220S


4.440.2

min 40

Ratings typ

max 10 100 4.0 6.0

Unit

80 (Tc=25C) 400 150 40 to +150

* 1: PW 100s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,


RG = 50

V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr R th (ch-c) R th (ch-a)

VDS = 10V f = 1.0MHz VGS = 0V ID = 35A VDD = 20V, RG = 22 RL = 0.57, VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/s

(1.5)

ID = 100 A, VGS = 0V VGS = 15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 35A VGS = 10V, ID = 35A

+0.2 0.86 0.1

2.540.1

2.540.1

0.4

0.1

(1.3)

10.20.3

(5.4)

1.2 1.56 62.5

Details of the back (S=2/1)

(Unit: mm)

ID VDS Characteristics (typ.)


70 60 50 10V 5.5V 5.0V VGS = 4.5V

ID VGS Characteristics (typ.)


70 60

VDS VGS Characteristics (typ.)


1.0

Re (yfs) ID Characteristics (typ.)


500 Tc = 55C 25C 150C

(VDS = 10V)

(Ta = 25C)

(VDS = 10V)

0.8 50 100 0.6 0.4 ID = 70A 0.2 35A 1 0 5 10 15 20 1

ID (A)

ID (A)

40 30 20 10 0 0 0.5

40 30 20 10 Ta = 150C 25C 55C

Re (yfs) (S)

VDS (V)

10

1.0

1.5

2.0

1.0

2.0

3.0

4.0

5.0

6.0

7.0

10

1.40.2

3 0.5

+0.3

2.0 30

3.0 50 5.0 5100 1200 860 100 100 300 130 0.9 110

V A A V S m pF pF pF ns ns ns ns V ns C/W C/W

(5)

(0.45)

(1.4)

1.30.2

10.5 0.5

9.10.3

+0.3

2.60.2 0.1 0.1


+0.2

1.20.2

70

VDS (V)

VGS (V)

VGS (V)

ID (A)

RDS (ON) I D Characteristics (typ.)


7.0 6.0

Ta = 25C VGS = 10V

RDS (ON) TC Characteristics (typ.)


12.0 10.0

ID = 35A VGS = 10V

j-c
10

t Characteristics (Single pulse)

Dynamic I/O Characteristics (typ.)


30 VDS (ID = 35A) 15

RDS (ON) (m)

j-c (C/W)

5.0 4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 60 70

RDS (ON) (m)

8.0 6.0 4.0 2.0 0 60 50

20

10 VGS VDD = 8V 12V 14V 16V 24V

0.1

10

50

100

150

0.01 0.00001 0.0001 0.001 0.01

0 0.1 1 10 100 0 50 100

0 150

ID (A)

Tc (C)

t (s)

Qg (nC)

Capacitance VDS Characteristics (typ.) IDR VSD Characteristics (typ.)


50000

Safe Operating Area (single pulse) PD TC Characteristics


500 100
(O N)

(Ta = 25C)
VGS = 0V f = 1MHz

70 60 50

(Ta = 25C)
PT
IT ED

90 80 70 60

=1

Capacitance (pF)

PT
PT

10000 Ciss

LI

PT
=1

=1
m

0 s

=1

00 s

IC (A)

40 30 20 Ta = 150C 25C 55C

10

RD

PD (W)

IDR (A)

0m

50 40 30

1000

Coss Crss 10

20 10

100

0 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

0.1 0.1

0 1 10 100 0 20 40 60 80 100 120 140 160

VDS (V)

VSD (V)

VDS (V)

Tc (C)

VGS (V)

VDS (V)

111

MOS FET 2SK3801

Absolute Maximum Ratings (Ta=25C)


Symbol VDSS VGSS ID ID (pulse)*1 PD EAS*1 Tch Tstg Ratings 40 20 70 140 Unit V V A A W mJ C C

Electrical Characteristics
Symbol Test Conditions

(Ta=25C)

External Dimensions TO-3P


1.8 5.00.2 15.60.4 13.6 9.6 4.80.2 2.00.1

min 40

Ratings typ

max 10 100 4.0 6.0

Unit

100 (Tc=25C) 400 150 40 to +150

* 1: PW 100 s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,


RG = 50

V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr R th (ch-c) R th (ch-a)

ID = 100 A, VGS = 0V VGS = 15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 35A VGS = 10V, ID = 35A VDS = 10V f = 1.0MHz VGS = 0V ID = 35A VDD = 20V, RG = 22 RL = 0.57, VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/s

2.0 30

3.0 50 5.0 5100 1200 860 100 100 300 130 0.9 100

1.5 1.25 35.71

V A A V S m pF pF pF ns ns ns ns V ns C/W C/W

19.90.3 4.0

2.0

a b

3.20.1

20.0 min 4.0 max

2 3
1.05 0.1
+0.2 +0.2

0.65 0.1

5.450.1
15.80.2

5.450.1
1. Gate 2. Drain 3. Source

1.4
a) Part No. b) Lot No. (Unit: mm)

(1)

(2)

(3)

ID VDS Characteristics (typ.)


70 60 50 10V 5.5V 5.0V VGS = 4.5V

ID VGS Characteristics (typ.)


70 60

VDS VGS Characteristics (typ.)


1.0

Re (yfs) ID Characteristics (typ.)


1000 Tc = 55C 25C 150C

(VDS = 10V)

(Ta = 25C)

(VDS = 10V)

0.8 50 40 30 20 10 0 0.5 1.0 1.5 2.0 0 0 Ta = 150C 25C 55C

40 30 20 10 0

VDS (V)

ID (A)

ID (A)

0.6 0.4 ID = 70A 0.2 35A

Re (yfs) (S)

100

10

1.0

2.0

3.0

4.0

5.0

6.0

7.0

1 0 5 10 15 20 1 10 70

VDS (V)

VGS (V)

VGS (V)

ID (A)

RDS (ON) I D Characteristics (typ.)


7.0 6.0

Ta = 25C VGS = 10V

RDS (ON) TC Characteristics (typ.)


10.0 8.0

ID = 35A VGS = 10V

j-c
10

Pw Characteristics (Single pulse) Dynamic I/O Characteristics (typ.)


30 VDS (ID = 35A) 15

RDS (ON) (m)

5.0 4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 60 70

RDS (ON) (m)

j-c (C/W)

VDS (V)

20 VGS VDD = 8V 12V 14V 16V 24V

10

6.0 4.0 2.0 0 60 50

0.1

10

50

100

150

0.01 0.00001 0.0001 0.001 0.01

0 0.1 1 10 100 0 50 100

0 150

ID (A)

Tc (C)

Pw (s)

Qg (nC)

Capacitance VDS Characteristics (typ.) IDR VSD Characteristics (typ.)


50000

Safe Operating Area (single pulse) PD TC Characteristics


500 100
(O N)

(Ta = 25C)
VGS = 0V f = 1MHz

70 60 50

(Ta = 25C)
PT
IT ED

120 100 80

=1

Capacitance (pF)

PT
PT

10000 Ciss

M LI

PT
=1

=1

40 30 20 Ta = 150C 25C 55C

IC (A)

10

RD

PD (W)

IDR (A)

=1 m 0m s s

00

60 40

1000

Coss Crss 10

1 20 0.1 0.1 0 1 10 100 0 20 40 60 80 100 120 140 160

100

0 0 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VDS (V)

VSD (V)

VDS (V)

Tc (C)

112

VGS (V)

MOS FET 2SK3803 (under development)

Absolute Maximum Ratings (Ta=25C)


Symbol VDSS VGSS ID ID (pulse)*1 PD EAS*2 Tch Tstg Ratings 40 20 85 170 Unit V V A A W mJ C C

Electrical Characteristics
Symbol Test Conditions

(Ta=25C)

External Dimensions TO220S

min 40

Ratings typ

max 10 100 4.0

Unit

100 (Tc=25C) 730 150 55 to +150

* 1: PW 100 s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,


RG = 50

V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr

(1.5)

ID = 100A, VGS = 0V VGS = 15V VDS = 40V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 42A VGS = 10V, ID = 42A VDS = 10V f = 1.0MHz VGS = 0V ID = 42A VDD = 20V, RG = 22 VGS = 10V ISD = 50A, VGS = 0V ISD = 25A, di/dt = 50A/s

10.0 0.5

8.60.3

2.0 50 2.1 10500 2400 1900 90 230 490 760 0.85 90

3.0

1.2

V A A V S m pF pF pF ns ns ns ns V ns

10.20.3 (1.4)

4.440.2 1.30.2

+0.3

a b

1.6
+0.2

0.10.1

3.0 0.5

+0.3

1.270.2 0.86 0.1 1.20.2 2.540.5 2.540.5


+0.2

0.40.1

a) Part No. b) Lot No. (Unit: mm)

113

MOS FET 2SK3851

Absolute Maximum Ratings (Ta=25C)


Symbol VDSS VGSS ID ID (pulse)*1 PD EAS*2 Tch Tstg Ratings 60 20 85 280 Unit V V A A W mJ C C

Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr Test Conditions

(Ta=25C)

External Dimensions TO-3P


1.8 5.00.2 15.60.4 13.6 9.6 4.80.2 2.00.1

min 60

Ratings typ

max
10 100 3.0

Unit

150 280 150 55 to +150

ID = 100 A, VGS = 0V VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 42A VGS = 10V, ID = 42A VDS = 10V f = 1.0MHz VGS = 0V ID = 42A VDD 16V RG = 22 VGS = 10V ISD = 50A, VGS = 0V ISD = 50A, di/dt = 100A/S

2.0 30

2.5 4.0 11500 1500 1100 60 25 370 65 0.87 70

4.7

* 1: PW 100s, duty cycle 1% * 2: VDD = 20V, L = 1mH, IL = 20A, unclamped

1.5

V A A V S m pF pF pF ns ns ns ns V ns

19.90.3 4.0

2.0

a b

3.20.1

20.0 min 4.0 max

2 3
1.05 0.1
+0.2 +0.2

0.65 0.1

5.450.1
15.80.2

5.450.1
1. Gate 2. Drain 3. Source

1.4

a) Part No. b) Lot No. (Unit: mm)

(1)

(2)

(3)

ID VDS Characteristics
90 80 70 60 4.5V 10V

ID VGS Characteristics
100 80

VDS VGS Characteristics


(VDS = 10V)
1.0 0.8

Re (yfs) ID Characteristics
500

(Ta = 25C)

(Ta = 25C)

(VDS = 10V)

100

ID (A)

50 40 30 20 10 0 VGS = 4.0V

ID (A)

60 40 Ta = 150C 25C 55C

0.6

Re (yfs) (S)

VDS (V)

0.4 0.2 0

ID = 85A ID = 42A

10

55C 25C 150C

20 0 0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5 6

10 12 14 16 18

10

50

100

VDS (V)

VGS (V)

VGS (V)

ID (A)

RDS (ON) I D Characteristics


6.0 5.0

Ta = 25C VGS = 10V

RDS (ON) TC Characteristics


8.0 7.0

VGS = 10V ID = 25A

j-c t
10

Characteristics (Single pulse)

RDS (ON) (m)

RDS (ON) (m)

j-c (C/W)
50 0 50 100 150

6.0 5.0 4.0 3.0 2.0 1.0 0 100

4.0 3.0 2.0 1.0 0 0 10 20 30 40 50 60 70 80 90

0.1

0.01 0.0001

0.001

0.01

0.1

10

ID (A)

Tc (C)

t (s)

Capacitance VDS Characteristics IDR VSD Characteristics


50000 Ta = 25C VGS = 0V f = 1MHz Ciss 90 80 70 60 Ta = 150C 25C 55C

PD TC Characteristics
160 140 120

(Ta = 25C)

Capacitance (pF)

10000

50 40 30 20

PD (W)

100 80 60 40 20 0

1000 Crss 500 0 10 20 30 40

Coss 50 60

IDR (A)

10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

25

50

75

100

125

150

VDS (V)

VSD (V)

Tc (C)

114

MOS FET FKV460S

Absolute Maximum Ratings (Ta=25C)


Symbol VDSS VGSS ID ID (pulse)* PD Tch Tstg * PW Ratings 40 +20, 10 60 180 Unit V V A A W C C

Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100A, VGS = 0V VGS = +20V VGS = 10V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 25A VGS = 10V, ID = 25A VDS = 10V f = 1.0MHz VGS = 0V ID = 25A VDD = 12V RL = 0.48 VGS = 10V ISD = 50A, VGS = 0V min 40 +10 5 100 2.3 7 2800 1400 600 20 600 250 100 1.0 9 Ratings typ max

(Ta=25C) Unit V

External Dimensions TO220S

10.20.3 (1.4)

4.440.2 1.30.2

A A V S m pF pF pF ns ns ns ns V
10.0 0.5
+0.3

60 (Tc=25C) 150 55 to +150 100s, duty 1%

a
8.60.3

(1.5)

1.3 20.0

1.6
+0.2

0.10.1

3.0 0.5

+0.3

1.270.2 0.86 0.1 1.20.2 2.540.5 2.540.5


+0.2

0.40.1

a) Part No. b) Lot No. (Unit: mm)

1.5

ID VDS Characteristics (typ.)


60 50 40 10V 5.0V 4.0V (Ta = 25C) 3.5V

ID VGS Characteristics (typ.)


70 60 (VDS = 10V)

VDS VGS Characteristics (typ.)


1.0 0.8 (Ta = 25C)

Re (yfs) ID Characteristics
500 (VDS = 10V)

50

ID (A)

ID (A)

40 30 20 10 Ta = 150C 25C 55C

VDS (V)

0.6 0.4 0.2 ID = 60A

Re (yfs) (S)

100 50

55C 25C 150C

30 VGS = 3.0V 20 10 0 0 1 2 3 4 5

25A 10A

10 20 5 1 5 10 60

10

15

VDS (V)

VGS (V)

VGS (V)

ID (A)

RDS (ON) I D Characteristics


14 12

Ta = 25C VGS = 10V

RDS (ON) TC Characteristics


14 12

VGS = 10V ID = 25A

(C/W)

j-c

j-a t

Characteristics (Single pulse)


j-a FR4 (70 100 1.6mm)

50 10

RDS (ON) (m)

10 8.0 6.0 4.0 2.0 0 0 10 20 30 40 50 60

RDS (ON) (m)

10 8.0 6.0 4.0 2.0 0 60 50 0 50 100 150

Use substrate 1 0.1


j-c

j-c

j-a

0.01 0.0001

0.001

0.01

0.1

10

ID (A)

Tc (C)

t (s)

Capacitance VDS Characteristics IDR VSD Characteristics


10000 (Ta = 25C) VGS = 0V f = 1MHz Ciss 60 10V 50 5V 40 (Ta = 25C)

Safe Operating Area (single pulse) PD TC Characteristics


200 ID (pulse) max 100
L N) (O DS IM IT

(Ta = 25C)
ED
PT =1

70 60 50

PT

=1

Capacitance (pF)

PD (W)

IDR (A)

1000

Coss Crss

30 VGS = 10V 20 10

IC (A)

10

0m

40 30 20 10

100 0 10 20 30 35

0 0 0.2 0.4 0.6 0.8 1.0 1.2

0.1 0.1

0 1 10 50 0 25 50 75 100 125 150

VDS (V)

VSD (V)

VDS (V)

Tc (C)

115

MOS FET FKV660S

Absolute Maximum Ratings (Ta=25C)


Symbol Ratings VDSS 60 +20, 10 VGSS 60 ID 180 ID(pulse) PD 60(Tc=25C) Tch 150 Tstg 40 to +150 PW 100s, duty 1% Unit V V A A W C C

Electrical Characteristics
Symbol V(BR)DSS IGSS IDSS VTH Re (yfs) RDS(ON) Ciss Coss Crss t d(on) tr t d(off) tf VSD Test Conditions ID=100 A, VGS=0V VGS =+20V VGS =10V VDS=60V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=25A VGS=10V, ID=25A VDS=10V f=1.0MHz VGS=0V ID=25A VDD=12V RL=0.48 VGS=10V ISD=50A, VGS=0V min 60 Ratings typ

( Ta=25C) max +10 5 100 2.5 11 2500 900 150 50 400 400 300 1.0 14 Unit V

External Dimensions TO220S

10.20.3 (1.4)

4.440.2 1.30.2

A A V S m pF pF pF ns ns ns ns V
+0.3

a
10.0 0.5 8.60.3

1.270.2 +0.2 0.86 0.1 2.540.5 1.20.2 2.540.5

3.0 0.5

+0.3

(1.5)

1.0 20

1.6 +0.2 0.1 0.1

0.40.1

a) Part No. b) Lot No. (Unit : mm)

1.5

ID VDS Characteristics
180 160 140 120 10V 6V 4.5V

ID VGS Characteristics
1000 100 10

VDS VGS Characteristics


(VDS = 10V)
1.4 1.2

Re (yfs) ID Characteristics
1000 55C 25C 150C

(Ta = 25C)

(Ta = 25C)

(VDS = 10V)

Re (yfs) (S)

1.0

100

VDS (V)

ID (A)

ID (A)

100 80 60 40

4V

0.8 ID = 60A 0.6 0.4 25A 0.2 10A

1 0.1

VGS = 3.5V

0.01 20 0 0 2 4 6 8 10 12 0.001 0 1 2

Ta = 150C 100C 50C 25C 0C 55C 3 4 5 6

10

1 0 5 10 15 20 1 10 100 200

VDS (V)

VGS (V)

VGS (V)

ID (A)

RDS (ON) I D Characteristics


0.030 0.025

RDS (ON) TC Characteristics


(Ta = 25C)
0.030 0.025 0.020 0.015 0.010 0.005 VGS = 10V VGS = 4V

Capacitance VDS Characteristics


(ID = 25A)
10000

(Ta = 25C)
VGS = 0V f = 1MHz

0.020 0.015 0.010 0.005 0 1 10 100 200 VGS = 4V VGS = 10V

Capacitance (pF)

RDS (ON) ()

RDS (ON) ()

Ciss 1000

Coss Crss 100 0 10 20 30 40 50

0 60 50

50

100

150

ID (A)

Tc (C)

VDS (V)

IDR VSD Characteristics


180 160 140 120

Ta = 25C VGS = 0V

Safe Operating Area (single pulse)


500
ID (pulse) max

(Ta = 25C)

100
L N) (O IM IT ED

IDR (A)

100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

ID (A)

PT

PT
=1

10

DS

=1 m s 0m s

0.1 0.1

10

100

VSD (V)

VDS (V)

116

Surface-mount MOS FET Array SDK06

Absolute Maximum Ratings (Ta=25C)


Symbol VDSS VGSS ID ID (pulse) *1 PT EAS *2 Tch Tstg Ratings 525 20 3 6
3 (Tc=25C, 4 circuits operate)

Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 1mA, VGS = 0V VGS = 20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12 VGS = 5V RG1 = 50, RG2 = 10k ISD = 1A, VGS = 0V min 47 Ratings typ 52 max 57 1.0 100 2.5 0.25 0.3

(Ta=25C) Unit V A A V S pF pF pF s s s s V

External Dimensions SMD-16A

40 150 55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10

Unit V V A A W mJ C C

1.00.3

0.25

0.890.15 0.75 0.05


+0.15

2.540.25

16 9.80.3 6.8max 3.00.2 6.30.2 8.00.5

4.0max

2.0 7.4 3.3 4.2 1.0

1.40.2

3.60.2

0.2 0.25 200 120 20

0 to 0.15

1.0 1.0

1.8

a b
Pin 1 20.0max
0.2

0.3

+0.15 0.05

19.56

a) Part No. b) Lot No. (Unit: mm)

1.5

ID VDS Characteristics
6 5
VGS = 5V VGS = 10V VGS = 4V

ID VGS Characteristics
20 10
VDS = 10V

R DS (ON) I D Characteristics
0.8
VGS = 4V Ta = 150C

0.6

RDS (ON) ()

ID (A)

ID (A)

75C

3 2
VGS = 3V

0.4

25C

0.1

1 0 0.01

Ta = 55C 25C 75C 150C

55C

0.2

10

12

14

0 0 1 2 3 4 5 6

VDS (V)

VGS (V)

ID (A)

R DS (ON) TC Characteristics
0.5
ID = 1A

Re (yfs) I D Characteristics
10
VDS = 10V

I DR VSD Characteristics
10

0.4

VGS = 4V typ.

RDS (ON) ()

Re (yfs) (S)

0.2

VGS = 10V typ.

IDR (A)

0.3

0.1

0.5

Ta = 55C 25C 150C

Ta = 150C 75C 25C 55C

0 50 0 50 100 150

0.2 0.05 0.1

0.5

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Tc (C)

ID (A)

VSD (V)

Safe Operating Area (single pulse)


10
ID (pulse) max

(Tc = 25C)
10 0 s

Equivalent Circuit Diagram

5
(o n)

LI

IT

ED

1m
m 10

S D

ID (A)

15 16

13 14

11 12

10

1
1 3 5 7

0.5
2 4 6 8

0.1 0.5

10

50

VDS (V)

117

Surface-mount MOS FET Array SDK08

(Ta=25C) Unit V V A A W 4 (Tc=25C, 4 circuits operate) 80 mJ C 150 C 55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50 Symbol VDSS VGSS ID ID (pulse) *1 PT EAS *2 Tch Tstg Ratings 50 20 4.5 9

Absolute Maximum Ratings

Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100A, VGS = 0V VGS = 20V VDS = 50V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3 VGS = 5V RG = 50 ISD = 6A, VGS = 0V min 50 100 100 2.3 13.0 0.08 0.1 Ratings typ max

(Ta=25C) Unit V nA A V S pF pF pF ns ns ns ns V

External Dimensions SMD-16A

1.00.3

0.25

0.890.15 0.75 0.05


+0.15

2.540.25

16 9.80.3 6.8max 3.00.2 6.30.2 8.00.5

0 to 0.15

1.3 5.0

4.0max

50 80 60 40 1.0

1.40.2

3.60.2

1.8 9.0 0.07 0.09 700 300 90

a b
Pin 1 20.0max
0.2

+0.15 0.3 0.05

19.56

a) Part No. b) Lot No. (Unit: mm)

1.5

ID VDS Characteristics (typ.)


18 16 14 12

ID VGS Characteristics
20 10

VDS VGS Characteristics (typ.)


(VDS = 10V)
1.4 1.2 Ta = 150C 75C 25C 0C 55C

Re (yfs) ID Characteristics
100 Ta = 150C 25C 55C

(Ta = 25C)
VGS = 4V

(ID = 4A)

(VDS = 10V)

VDS (V)

ID (A)

10 8 6 4 2 0 0 3 6 9 12 15 VGS = 3V

ID (A)

VGS = 10V

0.8 0.6 0.4 0.2

0.1

0.01

Ta = 150C 75C 25C 0C 55C 0 1 2 3 4 5

Re (yfs) (S)

1.0

10

0.001

10

0.1 0.05 0.1

10

VDS (V)

VGS (V)

VGS (V)

ID (A)

RDS (ON) I D Characteristics


0.20

RDS (ON) I D Characteristics


0.20

RDS (ON) TC Characteristics (typ.) S/W Time W ID Characteristics


0.20

(VGS = 10V)
Ta = 150C 75C 25C 0C 55C

(VGS = 4V)

(ID = 4A)
500

(single pulse) (Ta = 25C)


VDD = 12V constant RGS = 50 VGS = 5V

RDS (ON) ()

RDS (ON) ()

RDS (ON) ()

0.15

0.15

0.15 VGS = 4V

S/W Time (ns)

Ta = 150C

100 t d (off) t d (on)

tr

0.10

0.10

75C 25C 0C 55C

0.10

tf

0.05

0.05

0.05

VGS = 10V

10 0 0 0 60 50 5 0.1 0.5 1 5 10

10

12

10

12

50

100

150

ID (A)

ID (A)

Tc (C)

ID (A)

Equivalent Circuit Diagram


Capacitance VDS Characteristics ISD VSD Characteristics (typ.)
5000

PT Ta Characteristics
4 4 circuits operate 3 circuits operate 2 circuits operate 1 circuits operate
1

(Ta = 25C)
VGS = 0V f = 1MHz

8 7 6 Ta = 150C 75C 25C 0C 55C

Capacitance (pF)

1000

15

16

13

14

11

12

10

4 3 2 1 0

P T (W)

ISD (A)

Ciss

100

Coss

Crss 10 5 0.1 1 10 100

0 0 0.3 0.6 0.9 1.2 1.5 0 50 100 150

VDS (V)

VSD (V)

Ta (C)

118

Surface-mount MOS FET Array SDK09

Absolute Maximum Ratings (Ta=25C)


Symbol Ratings 120 VDSS 20 VGSS 6 ID 10 ID (pulse) *1 3 (Tc=25C, 4 circuits operate) PT EAS *2 80 Tch 150 Tstg 55 to +150 Unit V V A A W mJ C C

Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID=100A, VGS=0V VGS=20V VDS=120V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=4A VGS=10V, ID=4A VGS=4V, ID=4A VDS=10V f=1.0MHz VGS=0V ID=4A VDD=12V RL=3 VGS=5V RG=50 ISD=6A, VGS=0V min 120 5 100 2.0 0.15 0.2 400 130 30 100 300 250 200 1.0 0.2 0.25 Ratings typ max

(Ta=25C) Unit V A A V S pF pF pF ns ns ns ns V

External Dimensions SMD-16A

1.00.3

0.25

0.890.15 0.75 0.05


+0.15

2.540.25

16 9.80.3 6.8max 3.00.2 6.30.2 8.00.5

0 to 0.15

1.0 5.0

a b
Pin 1 20.0max
0.2

+0.15 0.3 0.05

4.0max

*1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50

19.56

1.40.2

3.60.2

a) Part No. b) Lot No. (Unit: mm)

1.5

ID VDS Characteristics
16
VGS=10V

ID VGS Characteristics
10
VDS=10V

R DS (ON) I D Characteristics
0.30 0.25
VGS=4V

12

8
VGS=4.5V

RDS (ON) ()

0.20 0.15
VGS=10V

ID (A)

ID (A)

4 2

Ta=55C 25C 75C 150C

0.10 0.05 0

1.0

2.0

3.0

4.0

10

VDS (V)

VGS (V)

ID (A)

R DS (ON) TC Characteristics
0.45 0.40
ID=4A VGS=4V

Re (yfs) I D Characteristics
50

I DR VSD Characteristics
6
VGS=0V

5 10 0.30 4
Ta=150C 75C 25C 55C

RDS (ON) ()

Re (yfs) (S)

IDR (A)
10

0.20

VGS=10V

3 2 1 0

1 0.5

0.10

Ta=55C 25C 75C 150C

0 50 0 50 100 150

0.1 0.05 0.1

0.5

0.2

0.4

0.6

0.8

1.0

1.2

Tc (C)

ID (A)

VSD (V)

Capacitance VDS Characteristics


1000 500
Ciss

Safe Operating Area (single pulse)


20 10 5
ID (pulse) max
ID (DC) max

(Ta = 25C)
10

Equivalent Circuit Diagram

Capacitance (pF)

ID (A)

VGS =0V f=1MHz

RDS (on) LIMITED

10
10 0m

1m
m s

0 s
15 16 13 14 11 12 9 10

100
Coss

1 0.5

s
1 3 5 7

50

Crss

10 0 10 20 30 40 50

0.1 1 5 10 50 100 200

VDS (V)

VDS (V)

119

MOS FET Array SLA5027

Absolute Maximum Ratings (Ta=25C)


Symbol VDSS VGSS ID ID (pulse)*1 PT EAS*2
j-c

Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100A, VGS = 0V VGS = 20V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 8A VGS = 4V, ID = 8A VDS = 10V f = 1.0MHz VGS = 0V ID = 8A VDD 30V RL = 3.75 VGS = 5V RG = 50 ISD = 10A, VGS = 0V min 60 100 100 2.0 0.08 Ratings typ max

(Ta=25C) Unit V A A V S pF pF pF ns ns ns ns V

External Dimensions SLA 12pin (LF800)

16.00.2

13.00.2

5 (Ta=25C, 4 circuits operate) 60 (Tc=25C,4 circuits operate)

8.5max

9.90.2

1.0 6.0

9.5min (10.4)

2.7

250 2.08
(Fin to lead terminal) AC1000

150 55 to +150 *1 PW 250s, duty 1% *2 VDD = 30V, L = 10mH, unclamped, RG = 50

VISO Tch Tstg

mJ C/W Vrms C C

1.5 12.0 0.07 1100 500 170 50 250 250 180 1.0

a b

Pin 1 1.20.15 0.85


+0.2 0.1

12 1.450.15 11P2.540.7 =27.941.0 31.5 max 0.55


+0.2 0.1

Lead plate thickness resins 0.8 max

Ratings 60 20 12 48

Unit V V A A W W

31.00.2 3.20.15 24.40.2 16.4


0.2

Ellipse 3.20.15 3.8 4.80.2 1.70.1

2.20.7

1 2 3 4 5 6 7 8 9 10 11 12

1.5

a) Part No. b) Lot No. (Unit: mm)

ID VDS Characteristics
10

ID VGS Characteristics
12 10
VDS = 10V

R DS (ON) I D Characteristics
0.1

RDS (on) ()

4V 5V 10V

VGS = 4V

ID (A)

ID (A)

VGS = 3V

6 4

Ta = 150C 75C 25C 55C

0.05

VGS = 10V

2 0 0 0.1

10

20

VDS (V)

VGS (V)

ID (A)

R DS (ON) TC Characteristics
0.12
VGS = 4V

Re (yfs) I D Characteristics
30
VDS = 10V

I DR VSD Characteristics
20 10 5
VGS = 0V

0.10

RDS (ON) ()

Re (yfs) (S)

VGS = 10V

IDR (A)
1 5 10 20

10

0.06

1 0.5

0.02 50

50

100

150

2 0.4

0.1

0.4

0.8

1.2

Tc (C)

ID (A)

VSD (V)

Capacitance VDS Characteristics


2000
VGS = 0V f = 1MHz

Safe Operating Area (single pulse)


50
ID (pulse) max
S (o n) LI su me M IT dV ED GS =4 V li ne

(Ta = 25C)

Equivalent Circuit Diagram

0. 5m

1000

Ciss
R

1m

Capacitance (pF)

10

As

500

10

ID (DC) max

s 10 0m

10

ID (A)

Coss

11

100

Crss

12

1 0.5 0.5

50 1 5 10 50

10

50 100

VDS (V)

VDS (V)

120

MOS FET Array SLA5098 (under development)

Absolute Maximum Ratings (Ta=25C)


Symbol VDSS VGSS ID ID (pulse)* EAS IAS Ratings 40 20 20 40 Unit V V A A

Electrical Characteristics
Symbol Test Conditions

(Ta=25C)

External Dimensions STA4 (LF412)

min 40

Ratings typ

max 10 100

Unit

13.00.2

9.90.2

8.5max

To be defined To be defined 5(
Without heatsink, Ta=25C, All circuits operate

mJ A

Tc=25C, 90 ( All circuits operate )

W
C C

Tch Tstg

150 55 to +150

VDS = 10V f = 1.0MHz VGS = 0V ID = 10A VDD = 14V RL = 1.4 VGS = 10V RG = 50 ISD = 10A, VGS = 0V ISD = 10A, VGS = 0V di/dt = 100A/s

2.7

PT

* PW 100s, duty 1%

1450 420 260 40 40 200 100 0.85 45

9.5min (10.4)

V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD t rr

ID = 100 A, VGS = 0V VGS = 15V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 10A VGS = 10V, ID = 10A

1.5 10

16.00.2

2.5 17

1.2

V A A V S m pF pF pF ns ns ns ns V ns

31.00.2 3.20.1 24.40.2 16.4


0.2

Ellipse 3.20.1 3.8 4.80.2 1.70.1 Lead plate thickness resins 0.8 max 15
+0.2 +0.2

a b

Pin 1 1.20.15 0.65 0.1 1.15 0.1 14P2.030.4 = 28.420.8 31.5 max

0.55 0.1

+0.2

2.20.7

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

a) Part No. b) Lot No. (Unit: mm)

Equivalent Circuit Diagram

14

5 3

10 8

15 13

12

11

121

MOS FET Array SMA5113

Absolute Maximum Ratings (Ta=25C)


Symbol VDSS VGSS ID ID (pulse) *1 PT EAS *2 IAS
j-a j-c

Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100A, VGS = 0V VGS = 30V VDS = 450V, VGS = 0V VDS = 10V, ID = 1mA VDS = 20V, ID = 3.5A VGS = 10V, ID = 3.5A VDS = 10V f = 1.0MHz VGS = 0V ID = 3.5A VDD 200V RL = 57 VGS = 10V RG = 50 ISD = 7A, VGS = 0V min 450 100 100 4.0 5.0 0.84 720 150 65 25 40 70 50 1.0 1.1 Ratings typ max

(Ta=25C) Unit V nA A V S pF pF pF ns ns ns ns V

External Dimensions SMA (LF1000)

10.20.2

Ratings 450 30 7 28
4 (Ta=25C, All circuits operate, No Fin) 35 (Tc=25C, All circuits operate, Fin)

Unit V V A A W W mJ A C/W C/W

4.00.2 31.00.2 2.50.2

b 2.4 a

30

2.0 3.5

130 7 31.2 3.57


Junction - Ambientare, Ta=25C, All circuits operate Junction - Case, Ta=25C, All circuits operate

(10.4)

1.210.15 1.460.15 0.85 0.1 11 P2.540.1=27.94


+0.2 +0.2

0.55 0.1

1.20.1

31.5 max (Including both-side resin burr)

C 150 C 55 to +150 *1 PW 100s, duty 1% *2 VDD = 30V, L = 5mH, IL = 7A, unclamped, RG = 50

Tch Tstg

1 2 3 4 5 6 7 8 9 10 11 12

1.5

a) Part No. b) Lot No. (Unit: mm)

ID VDS Characteristics
7
10V 5.5V

ID VGS Characteristics
7 6 5
VDS = 20V

RDS (ON) ID Characteristics


1.5
VGS = 10V

6 5

ID (A)

5V

ID (A)

4 3 2 1 0
VGS = 4.5V

4 3 2 1 0
Ta = 55C 25C 150C

RDS (ON) ()
0 2 4 6 8 10

1.0

0.5

10

15

20

VDS (V)

VGS (V)

ID (A)

RDS (ON) TC Characteristics


2.5
VGS = 10V ID = 3.5A

Re (yfs) ID Characteristics
100
VDS = 20V

IDR VSD Characteristics


7
VGS = 0V

2.0

50

6 5

RDS (ON) ()

1.0

10

Ta = 55C 25C 150C

IDR (A)
7

1.5

Re (yfs) (S)

4 3 2 1

0.5

0 50 0 50 100 150

2 0.05 0.1

0.5

0.2

0.4

0.6

0.8

1.0

Tc (C)

ID (A)

VSD (V)

Capacitance VDS Characteristics


1000
Ciss

Safe Operating Area (single pulse)


50
ID (pulse) max

(Ta = 25C)

Equivalent Circuit Diagram

500

10
VGS = 0V f = 1MHz

Capacitance (pF)

10 ID (DC) max 5
RD
S

(o

ED IT IM )L

1m
10

0 s
3 6 7 10

ID (A)

10
1 0.5

s
1 4 8 11

0m

100 50

Coss

12

Crss

0.1 20 0 10 20 30 40 50 0.05 3 5 10 50 100 500

VDS (V)

VDS (V)

122

MOS FET Array STA508A

Absolute Maximum Ratings


Symbol VDSS VGSS ID ID (pulse)*1 PT Ratings 120 20 6 10

4 (Ta = 25C) 20 (Tc = 25C) EAS *2 80 mJ Tch C 150 Tstg C 55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 50

(Ta=25C) Unit V V A A W W

Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 100A, VGS = 0V VGS = 20V VDS = 120V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 4.0A VGS = 10V, ID = 4.0A VGS = 4V, ID = 4.0A VDS = 10V f = 1.0MHz VGS = 0V ID = 4A VDD 12V RL = 3 VGS = 5V RG = 50 ISD = 6A, VGS = 0V min 120 5 100 2.0 0.15 0.2 400 130 30 100 300 250 200 1.0 0.2 0.25 Ratings typ max

(Ta=25C) Unit

External Dimensions STA4 (LF412)


25.25
0.2

1.0 5.0

1.5

V A A V S pF pF pF ns ns ns ns V

0.2

0.2

9.0

0.2

b a

11.3

3.5

0.5

2.3

1.0

0.25

0.5

0.15

(2.54) 0
0.3

0.3

9 2.54=22.86

0.05

0.15

1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S

a) Part No. b) Lot No. (Unit: mm)

ID VDS Characteristics
16
VGS = 10V

ID VGS Characteristics
10
VDS = 10V

R DS (ON) I D Characteristics
0.30 0.25
VGS = 4V

12

8
VGS = 4.5V

RDS (ON) ()

0.20 0.15
VGS = 10V

ID (A)

ID (A)

4 2

Ta = 55C 25C 75C 150C

0.10 0.05 0

1.0

2.0

3.0

4.0

0.5

1.2

4.0

C1.5

0.5

0.2

0.2

10

VDS (V)

VGS (V)

ID (A)

R DS (ON) TC Characteristics
0.45 0.40
ID = 4A VGS = 4V

Re (yfs) I D Characteristics
50

I DR VSD Characteristics
6
VGS = 0V

5 10 0.30 4
Ta = 150C 75C 25C 55C

RDS (ON) ()

Re (yfs) (S)

IDR (A)
10

0.20

VGS = 10V

3 2 1 0

1 0.5

0.10

Ta = 55C 25C 75C 150C

0 50 0 50 100 150

0.1 0.05 0.1

0.5

0.2

0.4

0.6

0.8

1.0

1.2

Tc (C)

ID (A)

VSD (V)

Capacitance VDS Characteristics


1000 500
Ciss

Safe Operating Area (single pulse)


20 10 5
ID (pulse) max
ID (DC) max

(Ta = 25C)
10

Equivalent Circuit Diagram

Capacitance (pF)

ID (A)

VGS = 0V f = 1MHz

RDS (on) LIMITED

10
10 0m

1m
m s

0 s

s
3 5 7 9

100
Coss

1 0.5

50

10

Crss

10 0 10 20 30 40 50

0.1 1 5 10 50 100 200

VDS (V)

VDS (V)

123

MOS FET Array STA509A

Absolute Maximum Ratings (Ta=25C)


Symbol VDSS VGSS ID ID (pulse) *1 PT Ratings 525 20 3 6 Unit V V A A W W

Electrical Characteristics
Symbol V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) Ciss Coss Crss t d (on) tr t d (off) tf VSD Test Conditions ID = 1mA, VGS = 0V VGS = 20V VDS = 40V, VGS = 0V VDS = 10V, ID = 250A VDS = 10V, ID = 1.0A VGS = 10V, ID = 1.0A VGS = 4V, ID = 1.0A VDS = 10V f = 1.0MHz VGS = 0V ID = 1A VDD 12V RL = 12 VGS = 5V RG1 = 50, RG2 = 10 ISD = 6A, VGS = 0V min 47 Ratings typ 52 max 57 1.0 100 2.5 0.25 0.3

(Ta=25C) Unit V A A V S pF pF pF s s s s V

External Dimensions STA


25.25
0.2

0.2

0.2

9.0

0.2

b a

11.3

4 (Ta = 25C) 20 (Tc = 25C) EAS *2 40 mJ Tch C 150 Tstg C 55 to +150 *1 PW 100s, duty 1% *2 VDD = 12V, L = 10mH, unclamped, RG = 10

1.0 1.0 0.2 0.25 200 120 20 2.0 7.4 3.3 4.2 1.0

3.5

0.5

2.3

1.0

0.25

0.5

0.15

(2.54) 0
0.3

0.3

9 2.54=22.86

0.05

0.15

1 2 3 4 5 6 7 8 9 10 S G D G D G D G D S

a) Part No. b) Lot No. (Unit: mm)

1.5

ID VDS Characteristics
6 5
VGS = 5V VGS = 10V VGS = 4V

ID VGS Characteristics
20 10
VDS = 10V

R DS (ON) I D Characteristics
0.8
VGS = 4V Ta = 150C

0.6

RDS (ON) ()

4 1

0.5

75C

ID (A)

ID (A)

1.2

3 2
VGS = 3V

0.4

25C

0.1

1 0 0.01

Ta = 55C 25C 75C 150C

55C

0.2

10

12

14

0 0 1 2 3 4 5 6

4.0

C1.5

0.5

0.2

0.2

VDS (V)

VGS (V)

ID (A)

R DS (ON) TC Characteristics
0.5
ID = 1A

Re (yfs) I D Characteristics
10
VDS = 10V

I DR VSD Characteristics
10

0.4

VGS = 4V typ.

RDS (ON) ()

Re (yfs) (S)

0.2

VGS = 10V typ.

IDR (A)

0.3

0.1

0.5

Ta = 55C 25C 150C

Ta = 150C 75C 25C 55C

0 50 0 50 100 150

0.2 0.05 0.1

0.5

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Tc (C)

ID (A)

VSD (V)

Safe Operating Area (single pulse)


10
ID (pulse) max

(Tc = 25C)
10 0 s

Equivalent Circuit Diagram

5
(o n)

LI

IT

ED

1m
10

S D

m s

ID (A)

1
2 4 6 8

0.5

10

0.1 0.5

10

50

VDS (V)

124

Thyristor with built-in reverse diode for HID lamp ignition TFC561D

Features
Repetitive peak off-state voltage: VDRM=600V Repetitive peak surge on-state current: ITRM=430A Critical rate-of-rise of on-state current: di/dt=1200A/s Gate trigger current: I GT=20mA max With built-in reverse diode

External Dimensions (unit: mm)


10.20.3 (1.4) 4.440.2 1.30.2

10.0 0.5

+0.3

1.20.2 11.0 0.86 0.1 0.760.1


+0.2 0.5

11.30.5

8.60.3

1.270.2

2.590.2

Absolute Maximum Ratings


Parameter Repetitive peak off-state voltage Repetitive surge peak on-state current Critical rate-of-rise of on-state current Peak forward gate current Peak gate power loss Average gate power loss Peak reverse gate voltage Diode repetitive peak surge forward current Junction temperature Storage temperature Symbol VDRM Ratings 600 Unit V Conditions Tj=40 to +125C, RGK=1k VD 430V, 100kcycle,
2.540.5

2.540.5

0.40.1

ITRM di/dt IFGM PGM PG (AV) VRGM I FRM Tj Tstg

430 1200 2.0 5.0 0.5 5 240 40 to +125 40 to +125

A A/s A W W V A C C

(1) (2) (3)

Wp=1.3s, Ta=125C

(1). Cathode (K) (2). Anode (A) (3). Gate (G)

*
f f 50Hz, duty 50Hz, duty 10% 10%

Weight: Approx. 1.5g

f VD

50Hz 430V, 100kcycle,

Measurement circuit
*
L

Wp=1.3s, Ta=125C

* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to
cool down the junction temperature of the device to 125C. This process shall be repeated up to 100K cycles.

VD

Sample

G1

C G2

Electrical Characteristics
Parameter On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Off-state current (1) Off-state current (2) Thermal resistance Diode forward voltage Symbol min VTM VGT IGT VGD IH IDRM (1) IDRM (2) Rth VF 0.1 2 10.0 100 1 4.0 1.4 Ratings typ max 1.4 1.5 20 V V mA V mA A mA C/W V IT=10A VD=6V, RL=10 VD=6V, RL=10 VD=480V, Tj=125C RGK=1k, Tj=25C Unit Conditions

(Tj=25C)

Current waveform (1cycle)


(Ta=25C)

VD=VDRM, RGK=1k, Tj=125C Junction to case IF=10A

100A/div

VD=VDRM, RGK=1k, Tj=25C

2s/div

125

Thyristor with built-in reverse diode for HID lamp ignition TFC562D

Features
Repetitive peak off-state voltage: VDRM=600V Repetitive peak surge on-state current: ITRM=600A Critical rate-of-rise of on-state current: di/dt=1600A/s Gate trigger current: I GT=20mA max With built-in reverse diode

External Dimensions (unit: mm)


4.440.2 (1.4) (5) 1.30.2

(0.45)

9.10.3

10.5 0.5

+0.3

2.60.2 (Root dimension)

Absolute Maximum Ratings


Parameter Repetitive peak off-state voltage Repetitive surge peak on-state current Critical rate-of-rise of on-state current Peak forward gate current Peak gate power loss Average gate power loss Peak reverse gate voltage Diode repetitive peak surge forward current Junction temperature Storage temperature Symbol VDRM Ratings
600 600 1600 2 5 0.5 5 460 40 to +125 40 to +125

1.34 0.1 0.860.1

+0.2 +0.2

V A A/s A W W V A

Tj = 40 to +125C, RGK = 1k Ta = 100C, VD 430V, WP = 1.05 s, IG = 70mA, dig/dt = 0.5A/s, 100kcycle*, See the examples of current waveforms f f 50Hz, duty 10% 50Hz, duty 10%

0.760.1

ITRM di/dt IFGM PGM PG (AV) VRGM I FRM Tj Tstg

2.540.1 (Root dimension) 10.20.3

0.40.1 2.540.1 (Root dimension)

50Hz

Ta = 100C, VD 430V, WP = 1.05s, 100kcycle*, See the examples of current waveforms

C C

Current waveform (1cycle)


(Ta=100C)

* The surge current for T=10ms /cycle shall be applied 50 cycles successively, and an interval time shall follow to
cool down the junction temperature of the device to 125C. This process shall be repeated up to 100K cycles.

Electrical Characteristics
Parameter On-state voltage Gate trigger voltage Gate trigger current Gate non-trigger voltage Holding current Off-state current (1) Off-state current (2) Thermal resistance Diode forward voltage Symbol VTM VGT IGT (1) VGD IH IDRM (1) IDRM (2) Rth VF
0.1 2 5 10 1 4.0 1.4

(Tj=25C)

Ratings min typ max


1.4 1.5 20

Unit
V V mA V mA A mA C/W V IT = 10A

Conditions

VD = 6V, RL = 10 VD = 6V, RL = 10 VD = 480V, Tj = 125C RGK = 1k, Tj = 25C VD = VDRM, RGK = 1k, Tj = 25C VD = VDRM, RGK = 1k, Tj = 125C

V: 200A/div

H: 2 s/div
* A single cycle operation consists of a continuous impression of 50 rounds with period T = 10ms followed by a rest time for the junction temperature of the element to cool down to 100C (= Ta). Repeat this cycle operation.

Junction to case, With infinite heatsink


IF = 10A

126

11.00.5

Unit

Conditions

(2.69) (1.8)

Rectifier Diodes for Alternators


Normal Type
Part No. SG-9CNS SG-9CNR SG-9LCNS SG-9LCNR SG-9LLCNS SG-9LLCNR SG-10LS SG-10LR SG-10LXS SG-10LXR SG-10LLS SG-10LLR SG-10LLXS SG-10LLXR VRM (V) 200 200 200 200 150 200 150 Absolute maximum ratings Tstg Tj IF (AV) IFSM (A) (A) (C) 20 30 35 30 35 40 45 200 300 350 300 350 400 450 40 to +150 40 to +150 40 to +150 40 to +150 40 to +150 40 to +150 40 to +150 VF (V) max 1.10 1.10 1.10 1.2 1.05 1.05 1.0 Electrical Characteristics IR VZ Condition (mA) (V) IF (A) max 20 30 35 100 100 100 100 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Condition IZ (mA) 2 3 Fig. No. 1

Zener Type
Part No. SG-9CZS SG-9CZR SG-9LLCZS SG-9LLCZR SG-10LZ23S SG-10LZ23R SG-10LLZ23S SG-10LLZ23R SG-14LXZS SG-14LXZR VRM (V) 17 17 17 17 16 Absolute maximum ratings Tj Tstg IF (AV) IFSM (A) (A) (C) 20 35 30 40 35 200 350 300 400 350 40 to +200 40 to +200 40 to +150 40 to +150 40 to +200 VF (V) max 1.10 1.10 1.2 1.05 1.15 Electrical Characteristics IR VZ Condition (mA) (V) IF (A) max 20 35 100 100 100 0.05 0.05 0.05 0.05 0.05 233 233 233 233 223 Condition IZ (mA) 10 10 10 3 10 100 4 Fig. No. 1 2

External Dimensions (unit: mm)


Fig. 1
S: 19.01.0 R: 23.01.0

Fig. 2

1.5 3.10.1

1.5 3.10.1 (R0.5)

S: 19.01.0 R: 23.01.0

50.4

Polarity

1.2

50.4

Polarity

7.00.2 8.40.2

8.40.2 S type R type 9.50.2

1.2

S type

R type

Fig. 3
13.5 10.0

5.0 2

Fig. 4

12.84 11.5 1.26

24.0

(1.5) (4)

2.5

R1.2 1.4 0.4 1.0

S : 20.5 R : 28.5

2.0 (2)

10.7

(5.8)

Polarity
4.0 4.7 8max 10max

Polarity

)
3.0 4.2 5.0

3.6

(45

(30

0.6

4.4

R type

S type
9.0 0.3

S type

R type

127

High-voltage Diodes for Igniters

Part No.

VRM (kV)

Absolute Maximum Ratings IRSM IRSM IF (AV) (mA) (mA) (A) Peak value of 50 Hz Peak value single shot half-wave triangular of 50 Hz wave signal half-wave with 100s half-power average signal bandwidth 30 30 30 30 30 10 3 3 3

Electrical Characteristics (Ta=25C)


Tj Tstg VF (V) max IR Vz (A) (kV) VR =VRM IR =100A IF (mA) max 0.55 to 1.0 10 10 2.6 to 5.0 3.2 to 6.0

Condition

Fig. No.

(C) 1 40 to +150 5 6

SHV-01JN SHV-05J SHV-06JN

0.5 2.5 3.0

2 1 2

External Dimensions (unit: mm)


Fig. 1 (SHV-05J)
0.5 2.5 C0.5 C0.5 27min 50.2 27min 27min 6.5 27min
0.2

Fig. 2 (SHV-06JN)
0.5 2.50.2

128

Power Zener Diode

(Ta=25C)

Absolute Maximum Ratings Part No. P (W) 1 1 1 1 1 1 5 5 5 6 6 1500 (5ms) 85 (500 s) PR (W) 50 (5ms) VDC (V) 20 20 13 20 25 27 20 22 22 22 22
I ZSM (A)

Electrical Characteristics Tstg VZ (V) 1mA instantaneous current 25.0 to 31.0 25.0 to 31.0 16.8 to 19.1 25.1 to 28.9 31.0 to 35.0 34.0 to 38.0 25.0 to 31.0 24 to 30 36 to 40 24 to 30 36 to 40
Condition

Tj

(C)
40 to +150 55 to +150 55 to +150 55 to +150 55 to +150 55 to +150 40 to +150 55 to +175 55 to +175 55 to +175 55 to +175

IR Fig. VR =VDC No. ( A) IZ (mA) max 1 1 1 1 1 1 10 10 10 10 10 10 10 10 10 10 10 50 10 10 10 10 1 2 2 2 2 2 3 4 4 4 4

Remarks

SFPZ-68 SJPZ-K28 * SJPZ-E18 * SJPZ-E27 * SJPZ-E33 * SJPZ-E36 * PZ628 SZ-10N27 SZ-10N40 * SZ-10NN27 SZ-10NN40 * * under development

2 2 65*1 70*1 40*1 90*1 55*1

Surface-mount type

Axial type

* 1: IZSM conditions
IRSM IRSM
2

Surface-mount type

10ms

Time

External Dimensions (unit: mm)

Fig. 1
2.6 0.2

4.5 0.2

Fig. 2

4.50.2

2.05 0.2

0.05

2.60.2

1.35 0.4

2.0min

1.35 0.4

1.10.2 1.50.2

1.30.4

5.1

+0.4 0.1

5.0 0.1

+0.4

1.30.4

1.50.2

Fig. 3

1.3 0.05
C2 Cathode marking

Fig. 3

8.50.5 100.3

50.3 20.3

56.0 0.7 10.0 0.02

100.3

15.50.5

10.0 0.2

13.50.3

2.70.3 7.20.5

30.5

2.00.5

(9.75)

0.050.05

2.150.2

+0.1

129

General-purpose Diodes

Rectifier Diodes
Surface-mount
Part No. VRM (V) I F (AV) (A) 0.9 1.0 400 SFPM-64 0.9 1.0 I FSM (A)
Peak value of 50 Hz half-wave signal

Tj (C)

Tstg (C)

VF (V) max 1.0 0.98

IR (A)
Condition I F (A)

I R (H) (mA) VR=VRM Condition Ta (C) max 50 50 50 50 100 100 100 100

VR=VRM max 10 10 10 10

Rth (j-l) (C/W) 20 20 20 20

Package

Weight (g) 0.072 0.072 0.072 0.072

SFPM-52 200 SFPM-62 SFPM-54

30 45 40 to +150 30 45

1.0 1.0 1.0 1.0

1 1 1 1

1.0 0.98

Ultra Fast Recovery Rectifier Diodes


Surface-mount
Part No. VRM (V) I F (AV) (A) 0.9 200 MPL-102S MP2-202S SFPL-64 400 1.0 10.0 20.0 1.0 I FSM (A)
Peak value of 50 Hz half-wave signal

Tj (C)

Tstg (C)

VF (V) max 0.98 0.98

IR (A)
Condition I F (A)

I R (H) (mA) VR=VRM Condition Ta (C) max 1 1 0.2 0.4 0.05 150 (Tj) 150 (Tj) 150 150 150

VR=VRM max 10 10 100 200 10

t rr (ns) 50 50 40 50 50

Condition I F/IRP (mA)

t rr (ns) 35 35 30 35 30

Condition I F/IRP (mA)

Rth (j-l) (C/W) 20 20 2.5 2.5 20

Package

Weight (g) 0.072 0.072 1.4 1.4 0.072

SFPL-52 SFPL-62

25 25 65 110 25 40 to +150

1.0 2.0 5.0 10.0 1.0

100/100 100/100 100/100 100/100 100/100

100/200 100/200 100/200 100/200 100/200

1 1 2 2 1

0.98 0.98 1.3

Schottky Barrier Diodes


Surface-mount
Part No. VRM (V) 30 30 30 40 40 40 40 60 60 60 60 90 90 I F (AV) (A) 1.0 2.0 3.0 1.0 2.0 2.0 3.0 0.7 1.5 2.0 2.0 0.7 1.5 I FSM (A)
Peak value of 50 Hz half-wave signal

Tj (C)

Tstg (C)

VF (V) max 0.45 0.45 0.45 0.55 0.55 0.6

IR (A)
Condition I F (A)

I R (H) (mA) VR=VRM Condition Ta (C) max 35 70 100 35 70 70 100 30 70 55 70 30 55 150 150 150 150 150 150 150 150 150 150 150 150 150

VR=VRM max 1.0 2.0 3.0 1 5 0.2 5 1 1 1 2 1 2

Rth (j-l) (C/W) 20 20 20 20 20 20 20 20 20 20 20 20 20

Package

Weight (g) 0.072 0.072 0.072 0.072 0.072 0.072 0.072 0.072 0.072 0.072 0.072 0.072 0.072

SFPJ-53 * SFPJ-63 SFPJ-73 SFPB-54 SFPB-64 SFPE-64 SFPB-74 SFPB-56 SFPW-56 SFPB-66 SFPB-76 SFPB-59 SFPB-69

30 40 50 30 60 40 60 10 25 25 40 10 40 40 to +150

1.0 2.0 3.0 1.0 2.0 2.0 2.0 0.7 1.5 2.0 2.0 0.7 1.5

1 1 1 1 1 1 1 1 1 1 1 1 1

0.5 0.62 0.7 0.69 0.62 0.81 0.81

* under development

External Dimensions (unit: mm)


1: (Surface-mount SFP)
4.5
0.2

2: (TO-220S)
0.55 0.1 0.16 1.37 0.7 5.0 6.5 0.4 5.4 0.4 1.7 0.5 2.30.4 5.4 4.1 2.9
a b

2.6 0.2

5.5 0.4

1.2max

2.05 0.2

0.05

4.9 0 to 0.25

2.5 0.4

1.35 0.4

2.0min

1.35 0.4

1.1 0.2 1.5 0.2

2.29 0.5 2.29 0.5

5.1 0.1

+0.4

0.5 0.2

0.80.1

1.15 0.1

0.8 0.1

a) Part No. b) Polarity c) Lot No.


(Common with heatsink)

0.55 0.1 1.5 max


N.C Cathode Anode

130

General-purpose Diodes - Taping Specifications

Taping Specifications
Taping Name Emboss taping
4.5
0.2

Taping Dimensions (mm)


1.75 0.1

Packaging Dimensions (mm) and Markings Reel

Packaging Quantity

4.0

0.1

1.5

+0.1 0

Marking of Part No., Lot No., quantity, etc.

2.6 0.2

5.5 0.05

0.05 0.05

2.05 0.2

5.5

12.0 0.3

+ 0.1

2.0 0.5 13 0.5 65

1,800 pcs. per reel

1.35 0.4

2.0min 5.1 0.1


+0.4

1.35 0.4

1.1 1.5 0.2


Pull out direction

0.2

4.0 0.1

2.0 2.6

R1.0

210.8

A suffix "V" is added to Part No. for tape packaging.

(1) The right side of the tape is the cathode viewing in the unfold direction. (2) The product is inserted into the case with the installed electrode on the lower side. (3) A leader tape 150 to 200mm long is provided on the unfolding edge. (4) A space of at least 10 pitches equivalent is provided on either end of the tape. (5) Taping with reversed diode polarity is available on request (taping name VL).

3.1

178 2

141.5

2.0 0.5

Power Surface-mount - Taping Specifications


Taping Name Taping Dimensions (mm) Packaging Dimensions (mm) and Markings
Part No.

Packaging Quantity

Pull out direction

Quantity
Taping name (type)

VL
A suffix "VL" is added to Part No. for tape packaging.
(Cover tape)
+0.1 1.5 0

Lot No.

Materials Disc: both-face white corrugated cardboard Core: foamed styrol

3,000 pcs.
35 1 3 8 1 3 8

per reel

20.1 40.1 120.1

1.75 0.1

(Seal part)

4.90.1
10

(Bottom dimensions)

11.50.1

10

B 3302 1001 130.2

21.50.1

14.40.1

240.3

80

60

40

20

22 120

Pull out direction

10.80.1
(Bottom dimensions)

(Seal part)

0.40.1

25.51 29.51
R135

2.5

5.4max

0.1

VR
A suffix "VR" is added to Part No. for tape packaging.

90.5

3,000 pcs.
20.5

7 0.5

per reel
210.8

High-voltage diodes for ignition - Taping Specifications


Taping Name Axial taping
50.5

Taping Dimensions (mm)

Packaging Dimensions (mm) and Markings

5 0.

13
130.5

.2 0

Packaging Quantity

V1
A suffix "V1" is added to Part No. for tape packaging.
6 1.0 58 1 6 1.0

1.2 max

Part No.

Lot No.
Quantity
1.5

5,000 pcs. per reel

29 75 1.5 25 1.0 max


1

3402

131

General-purpose Diodes - Taping Specifications

Power Zener Surface-mount - Taping Specifications


Taping Name Taping Dimensions (mm) Packaging Dimensions (mm) and Markings Packaging Quantity

Pull out direction

VL
A suffix "VL" is added to Part No. for tape packaging.
35 1 3 B 1 3 B

750 pcs. per reel


1.500.1 2.000.1 4.000.1 1.750.1

5.640.1
10

11.500.1

24.000.1

+0.3

10

B 3302 1001 130.2

16.000.1

80

60

40

20

22 120

Pull out direction

VR
A suffix "VR" is added to Part No. for tape packaging.

R TYPE

L TYPE

16.000.1 10.800.1
8
8

1.500.25 0.400.05

25.51 29.51
R135

90.5

750 pcs.
20.5

7 0.5

per reel
210.8

130.5

The label showing the product name, quantity and production lot is attached to the reel.

5 0.

13

0 .2

132

LEDs
3-1. Uni-Color LED Lamps 3-2. Bi-Color LED Lamps 3-3. Surface Mount LEDs 3-4. Infrared LEDs
..............

134

..................

137

..................

138

.....................................

140

3-5. Ultraviolet LEDs ............................... 141 3-6. Multi-chip Modules


.....................

142

133

General-purpose LEDs

Uni-Color LED Lamps


Absolute Maximum Ratings
Parameter PD IF I F I FP VR Top Tstg Unit mW mA mA /C mA V C C 3 30 to +85 30 to +100 100 5 30 to +80 GaP GaAsP 75 30 0.45 70 Above 25C f=1kHz, tw=100s Ratings GaA As A GaInP InGaN 120 GaN (Ta=25C) Conditions

Outline

Emitting color

Part No.

Lens color typ


Diffused red Diffused white Tinted red Diffused white Clear Diffused red Tinted red Diffused orange Tinted orange Diffused orange Tinted orange Diffused yellow Tinted yellow Diffused green Tinted green Clear Diffused red Tinted red Diffused orange Tinted orange Diffused orange Tinted orange Tinted yellow Diffused green Tinted green Clear Clear Clear Clear Clear Clear Clear Tinted red Diffused red Tinted orange Diffused orange Tinted orange Tinted green Diffused green Clear Clear Clear Clear Clear Tinted green Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow

VF (V) max
2.5

Deep red

High-intensity red Red Amber Orange Yellow Green Pure green Red Amber Orange Yellow Green Pure green
Ultra high-intensity red Ultra high-intensity orange Ultra high-intensity pure green Ultra high-intensity blue Ultra high-intensity blue Ultra high-intensity red

5 Round

Red Amber Orange Green Pure green


Ultra high-intensity pure green Ultra high-intensity blue High-intensity red

4.65.6 Egg-shaped

Ultra high-intensity red

Green
Deep red Red

4 Round

Amber Orange Yellow

SEL1110R SEL1110W SEL1110S SEL1610W SEL1610C SEL1210R SEL1210S SEL1810D SEL1810A SEL1910D SEL1910A SEL1710Y SEL1710K SEL1410G SEL1410E SEL1510C SEL1210RM SEL1210SM SEL1810DM SEL1810AM SEL1910DM SEL1910AM SEL1710KM SEL1410GM SEL1410EM SEL1510CM SELU1210CXM SELU1910CXM-S SELU1D10CXM SELU1E10CXM SELS1E10CXM-M SELU1250CM SEL1250SM SEL1250RM SEL1850AM SEL1850DM SEL1950KM SEL1450EKM SEL1450GM-YG SEL1550CM SELU1D50CM SELU1E50CM SEL1615C SELU1253CMKT SEL1453CEMKT SEL4110S SEL4110R SEL4210S SEL4210R SEL4810A SEL4810D SEL4910A SEL4910D SEL4710K SEL4710Y

2.0

1.75 1.9 1.9 1.9 2.0 2.0 2.0 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 3.3 3.3 3.7 2.0 1.9 1.9 1.9 2.0 2.0 3.3 3.3 1.75 2.0 2.0 2.0 1.9 1.9 1.9 2.0

2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.0 4.2 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.0 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5

Electro-optical characteristics (Ta=25C) Peak wavelength Dominant wavelength IV p (nm) p (nm) (mcd) Condition IF (mA) typ typ typ 2.8 5 2.8 625 700 4.5 250 20 642 660 300 26 20 620 630 75 18 10 605 610 37 14 10 590 587 25 22 10 571 570 65 32 20 567 560 84 20 50 559 555 36 20 620 630 75 18 10 605 610 37 19 10 590 587 34 10 65 571 570 30 20 567 560 84 20 50 559 555 20 280 625 635 20 450 589 591 20 2000 530 525 20 600 470 468 20 1000 470 468 20 900 625 635 75 20 620 630 48 90 20 605 610 60 20 96 590 587 190 20 567 560 120 20 72 559 555 20 6000 530 525 20 1850 470 468 20 170 642 660 20 200 625 635 20 140 567 560 2.4 5 625 700 1.7 30 20 620 630 17 20 10 605 610 15 26 10 590 587 16 36 10 571 570 14

Chip material
GaP

GaA As GaAsP GaAsP GaAsP GaP GaP GaP GaAsP GaAsP GaAsP GaP GaP GaP A GaInP A GaInP InGaN InGaN InGaN A GaInP GaAsP GaAsP GaAsP GaP GaP InGaN InGaN GaA As A GaInP GaP GaP GaAsP GaAsP GaAsP GaP 7 4 2 1

134

Fig. No.
3 5 6

Contact mount

General-purpose LEDs

Uni-Color LED Lamps

Outline

Emitting color

Part No.

Lens color
typ
Tinted green Diffused green Clear Clear Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green Clear Tinted red Diffused red Tinted red Diffused red Tinted orange Diffused orange Clear Tinted orange Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green Clear Diffused green Clear Clear Diffused white Clear Tinted red Tinted orange Clear Clear Tinted orange Diffused white Clear Tinted yellow Diffused white Tinted green Diffused green Tinted green Clear Clear Clear Tinted red Tinted orange Clear Tinted green Clear Tinted red Diffused red Diffused white Clear Clear Tinted red Diffused red Diffused white Tinted orange Diffused orange Tinted orange

VF (V)
max 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.8 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.2 2.5 2.5 2.5 2.5 2.5 2.5 2.2 2.5 2.5

Green
Ultra high-intensity green

Pure green Deep red Red

4 Round

Amber Orange Yellow Green Pure green Deep red Red Amber
Ultra high-intensity orange

Orange Yellow Green Pure green Blue


Ultra high-intensity deep red Ultra high-intensity red

Red Amber
Ultra high-intensity light amber Ultra high-intensity orange

Orange

3 Round

Ultra high-intensity yellow

Yellow Green
Ultra high-intensity green

Deep green Pure green


Ultra high-intensity pure green Ultra high-intensity blue

Red Orange Yellow Green Pure green Deep red


High-intensity red Ultra high-intensity deep red

Red

Amber
Ultra high-intensity light amber

SEL4410E SEL4410G SELU4410CKT-S SEL4510C SEL4114S SEL4114R SEL4214S SEL4214R SEL4814A SEL4814D SEL4914A SEL4914D SEL4714K SEL4714Y SEL4414E SEL4414G SEL4514C SEL6110S SEL6110R SEL6210S SEL6210R SEL6810A SEL6810D SELU6910C-S SEL6910A SEL6910D SEL6710K SEL6710Y SEL6410E SEL6410G SEL6510C SEL6510G SEL6E10C SELU6614C-S SELU6614W-S SELU6214C SEL6214S SEL6814A SELS6B14C SELU6914C-S SEL6914A SEL6914W SELU6714C SEL6714K SEL6714W SEL6414E SELU6414G-S SEL6414E-TG SEL6514C SELS6D14C SELS6E14C-M SEL6215S SEL6915A SEL6715C SEL6415E SEL6515C SEL2110S SEL2110R SEL2110W SEL2610C SELU2610C-S SEL2210S SEL2210R SEL2210W SEL2810A SEL2810D SELU2B10A-S

2.0 2.1 2.0 2.0 1.9 1.9 1.9 2.0 2.0 2.0 2.0 1.9 1.9 2.0 1.9 2.0 2.0 2.0 4.0 2.0 2.0 1.9 1.9 2. 2.0 1.9 2.1 2.0 2.0 2.1 2.0 2.0 3.3 3.7 1.9 1.9 2.0 2.0 2.0 2.0 1.75 2.0 1.9

1.9 2.0

2.5 2.5

Electro-optical characteristics (Ta=25C) IV Peak wavelength Dominant wavelength (mcd) Condition p (nm) p (nm) typ typ typ IF (mA) 87 20 560 567 34 20 560 562 170 20 555 559 45 3.8 10 700 625 2.8 40 20 630 620 24 20 10 610 605 15 26 10 587 590 11 38 10 570 571 27 69 20 560 567 48 20 26 555 559 3.9 10 700 625 2.6 41 20 630 620 18 22 10 610 605 9.6 20 550 591 589 22 10 587 590 11 37 10 570 571 11 90 20 560 567 30 42 20 555 559 9.6 20 60 430 466 150 20 650 639 90 20 180 635 625 20 18 630 620 10 9.0 610 605 20 120 600 596 20 180 591 589 8.0 10 587 590 5.0 20 60 572 571 66 20 570 571 30 42 20 560 567 30 20 560 562 18 20 558 564 12 20 555 559 300 20 518 525 70 20 468 470 45 20 630 620 60 20 587 590 90 20 570 571 81 20 560 567 44 20 555 559 4 1.8 10 700 625 1.8 60 20 660 642 300 20 650 639 40 15 20 630 620 15 22 10 610 605 9.0 300 20 598 595

Chip material
GaP A GaInP GaP GaP GaAsP GaAsP GaAsP GaP GaP GaP GaP GaAsP GaAsP A GaInP GaAsP GaP GaP GaP GaN A GaInP A GaInP GaAsP GaAsP A GaInP A GaInP GaAsP A GaInP GaP GaP A GaInP GaP GaP InGaN InGaN GaAsP GaAsP GaP GaP GaP GaP GaA As A GaInP

10

11

12 GaAsP

GaAsP A GaInP

Fig. No.
7 8 9

Contact mount

135

General-purpose LEDs

Uni-Color LED Lamps

Outline

Emitting color

Part No.

Lens color
typ
Tinted orange Diffused orange Clear Tinted yellow Diffused yellow Tinted green Diffused green Clear Diffused green Clear Clear Clear Diffused red Tinted red Diffused red Tinted orange Diffused orange Tinted orange Diffused orange Tinted yellow Diffused yellow Tinted green Diffused green Clear Tinted red Tinted orange Tinted light orange Tinted yellow Tinted green Tinted light green Clear Diffused white Tinted green Tinted green Clear Tinted light red Tinted red Tinted orange Tinted orange Tinted yellow Tinted green Diffused green Tinted green Clear Tinted red Clear Tinted red Clear Tinted orange Clear Tinted orange Clear Tinted green Clear Clear Clear Tinted red Tinted orange Clear Clear Tinted orange Clear Clear Tinted green Clear Clear Clear

VF (V)
max 2.5 2.5 2.5 2.5 2.5 4.0 4.0 4.8 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.8 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.8

Orange Ultra high-intensity yellow Yellow

Green

Pure green Ultra high-intensity pure green Ultra high-intensity blue

3 Round

Blue Ultra high-intensity red Red

Amber

Orange

Yellow

Green Pure green Red Amber Orange Yellow Green Pure green Ultra high-intensity red Ultra high-intensity light amber

Inverted-cone typ for surface illumination

Green Deep green Pure green High-intensity red Red Amber Orange Yellow Green Pure green High-intensity red Ultra high-intensity deep red Ultra high-intensity red Red Ultra high-intensity amber

5mm Pitch lead rectangular

Amber Ultra high-intensity light amber Orange Ultra high-intensity yellow Green Pure green Blue Ultra high-intensity red Red Amber Ultra high-intensity light amber Ultra high-intensity orange

5mm Pitch lead bow-shaped

Orange Ultra high-intensity yellow Yellow Green Pure green Ultra high-intensity blue Blue

SEL2910A SEL2910D SELU2710C SEL2710K SEL2710Y SEL2410E SEL2410G SEL2510C SEL2510G SELU2D10C SELU2E10C SEL2E10C SELU2215R-S SEL2215S SEL2215R SEL2815A SEL2815D SEL2915A SEL2915D SEL2715K SEL2715Y SEL2415E SEL2415G SEL2515C SEL1213C SEL1813A SEL1913K SEL1713K SEL1413E SEL1513E SELU6213C-S SELS6B13W SEL6413E SEL6413E-TG SEL6513C SEL2613CS-S SEL2213C SEL2813A SEL2913K SEL2713K SEL2413E SEL2413G SEL2513E SEL5620C SELU5620S-S SELU5220C-S SEL5220S SELU5820C-S SEL5820A SELU5B20C SEL5920A SELU5720C SEL5420E SEL5520C SEL5E20C SELS5223C SEL5223S SEL5823A SELS5B23C SELS5923C SEL5923A SELU5723C SEL5723C SEL5423E SEL5523C SELU5E23C SEL5E23C

1.9 2.1 2.0 2.0 2.0 3.3 3.3 4.0 2.0 1.9 1.9 1.9 2.0 2.0 2.0 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 2.0 2.0 2.0 1.75 1.9 1.9 1.9 2.0 2.0 2.0 1.75 2.0 2.0 1.9 2.0 1.9 2.0 1.9 2.1 2.0 2.0 4.0 2.0 1.9 1.9 2.0 2.0 1.9 2.1 2.0 2.0 2.0 3.3 4.0

Electro-optical characteristics (Ta=25C) IV Peak wavelength Dominant wavelength (mcd) Condition p (nm) p (nm) typ typ typ IF (mA) 16 10 590 587 8.0 20 270 571 572 40 10 571 570 14 77 20 567 560 20 43 20 559 555 8.2 20 1200 530 525 20 400 470 468 20 60 466 430 20 380 624 632 45 20 620 630 38 80 10 605 610 60 81 10 590 587 53 130 10 571 570 110 110 20 567 560 72 20 52 559 555 20 7.0 620 630 20 8.0 605 610 20 8.0 590 587 20 15 571 570 20 12 567 560 20 5.0 559 555 20 30 624 632 20 60 596 600 20 14 567 560 20 6 564 558 20 5.0 559 555 20 20 642 660 20 7.0 620 630 20 8.0 605 610 20 8.0 590 587 20 17 571 570 14 20 567 560 12 20 5.0 559 555 20 100 642 660 20 100 639 650 20 120 624 632 20 20 620 630 20 150 605 611 20 12 605 610 20 120 596 600 20 12 590 587 20 50 571 572 20 20 567 560 20 6.0 559 555 20 10 466 430 20 100 625 635 20 25 620 630 20 35 605 610 20 135 596 600 20 145 589 591 20 35 590 587 20 155 571 572 20 60 571 570 20 40 567 560 20 13 559 555 20 180 470 468 20 20 466 430

Chip material
GaAsP A GaInP GaP GaP GaP InGaN InGaN GaN A GaInP GaAsP GaAsP GaAsP GaP GaP GaP GaAsP GaAsP GaAsP GaP GaP GaP A GaInP A GaInP GaP GaP GaP GaA As GaAsP GaAsP GaAsP GaP GaP GaP GaA As A GaInP A GaInP GaAsP A GaInP GaAsP A GaInP GaAsP A GaInP GaP GaP GaN A GaInP GaAsP GaAsP A GaInP A GaInP GaAsP A GaInP GaP GaP GaP InGaN GaN

12

13

14

15

16

17

18

136

Fig. No.

Contact mount

General-purpose LEDs

Bi-Color LED Lamps


Absolute Maximum Ratings
Parameter PD IF I F I FP VR Top Tstg Unit mW mA mA /C mA V C C 3 30 to +85 30 to +100 GaP GaAsP 75 30 0.45 100 5 Above 25C f=1kHz, tw=100s Ratings GaA As A GaInP InGaN 120 (Ta=25C) Conditions Also applies to simultaneous lighting

Outline

Part No.

Emitting color
Deep red

Lens color
typ 2.0
Clear

VF (V)
max 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 2.5 4.0 2.5 4.0 2.5 4.0 2.5 4.0 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5

Electro-optical characteristics (Ta=25C) Peak wavelength Dominant wavelength IV p (nm) p (nm) (mcd) Condition typ typ typ IF (mA)
15 50 6.0 20 65 90 60 60 50 60 45 60 500 400 250 150 250 700 800 2000 300 500 15 20 10 20 10 20 25 35 25 25 25 35 25 35 150 40 120 30 150 30 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 700 555 700 555 630 560 630 560 610 560 587 560 632 468 632 468 632 525 611 525 611 525 630 560 610 560 587 560 630 560 630 587 610 560 587 560 590 570 635 560 590 560 625 559 625 559 620 567 620 567 605 567 590 567 624 470 624 470 624 530 605 530 605 530 620 567 605 567 590 567 620 567 620 590 605 567 590 657 590 571 625 567 590 567

Chip material
GaP GaP GaP GaP GaAsP GaP GaAsP GaP GaAsP GaP GaAsP GaP A GaInP InGaN A GaInP InGaN A GaInP InGaN A GaInP InGaN A GaInP InGaN AGaAsP GaP GaAsP GaP GaAsP GaP GaAsP GaP GaAsP GaAsP GaAsP GaP GaAsP GaP A GaInP GaP A GaInP A GaInP A GaInP A GaInP

Common

SML11516C SML1516W SML1216C SML1216W SML1816W


5 Round

Pure green Deep red Diffused white Pure green Red Clear Green Red Diffused white Green Amber Diffused white Green Orange Diffused white Green Ultra high-intensity red Clear Ultra high-intensity blue Ultra high-intensity red Diffused white Ultra high-intensity blue Ultra high-intensity red Diffused white Ultra high-intensity pure green Ultra high-intensity amber Clear Ultra high-intensity pure green Ultra high-intensity amber Diffused white Ultra high-intensity pure green Red Clear Green Amber Clear Green Orange Clear Green Red Clear Green Red Clear Orange Amber Clear Green Orange Clear Green Ultra high-intensity orange Clear Yellow Ultra high-intensity red Clear Ultra high-intensity green Ultra high-intensity orange Clear Ultra high-intensity green

2.0 2.0 2.0 1.9 2.0 1.9 2.0 1.9 2.0 1.9 2.0 2.0 3.3 2.0 3.3 2.0 3.3 2.0 3.3 2.0 3.3 1.9 2.0 1.9 2.0 1.9 2.0 1.9 2.0 1.9 1.9 1.9 2.0 1.9 2.0 2.0 2.0 2.0 2.2 2.0 2.2

Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode Cathode 21 20 19

SML19416W SMLU12E16C SMLU12E16W SMLU12D16W SMLU18D16C SMLU18D16W-S SML72420C

3.36 Rectangular

SML78420C SML79420C SML72423C SML72923C SML78423C

3.36 Bow-shaped

SML79423C SMLS79723C SMLU72423C-S SMLU79423C-S

Fig. No.

Contact mount

137

General-purpose LEDs

Surface Mount LEDs


Absolute Maximum Ratings
Parameter IF I F I FP VR Top Tstg Unit mA mA /C mA V C C 4 30 to +85 30 to +100 GaP GaAsP Ratings GaA As A GaInP 30 0.45 70 5 25 to +85 InGaN GaN (Ta=25C) Conditions

Above 25C f=1kHz, tw=100s

Uni-Color Surface Mount LEDs


Outline Emitting color
Red Amber Orange

Part No.

Lens color typ


Clear Clear Clear Clear Clear Tinted green Clear Clear Clear Clear Clear Clear Clear Tinted green Clear Clear Clear Clear Clear Clear Clear Clear Tinted green Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Tinted green Clear 1.9 1.9 1.9 2.0 2.0 2.0 2.0 3.3 1.9 1.9 1.9 2.0 2.0 2.0 2.0 2.0 1.7 1.9 1.9 1.9 2.0 2.0 2.0 2.0 3.3 3.3 3.9 1.7 1.9 1.9 1.9 1.9 1.9 1.9 2.0 2.0 2.0 2.0

VF (V) max
2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 4.0 4.0 4.8 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.5

Electro-optical characteristics (Ta=25C) Peak wavelength Dominant wavelength IV p (nm) (mcd) p (nm) Condition IF (mA) typ typ typ
10 16 13 25 22 11 8.0 50 15 20 15 35 33 15 10 1.5 25 10 16 13 25 22 11 8.0 150 50 6.0 35 100 15 10 20 70 15 35 33 15 10 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 3 20 20 20 20 20 20 20 630 610 587 570 560 558 555 468 630 610 587 570 560 558 555 700 660 630 610 587 570 560 558 555 525 470 430 660 635 630 615 610 590 587 570 560 558 555 620 605 590 571 567 564 559 470 620 605 590 571 567 564 559 625 642 620 605 590 571 567 564 559 525 468 466 642 625 620 607 605 590 590 571 567 564 559

Chip material
GaAsP GaAsP GaAsP GaP GaP GaP GaP InGaN GaAsP GaAsP GaAsP GaP GaP GaP GaP GaP GaA As GaAsP GaAsP GaAsP GaP GaP GaP GaP InGaN InGaN GaN GaA As A GaInP GaAsP A GaInP GaAsP A GaInP GaAsP GaP GaP GaP GaP

Side view (flat lens type)

Yellow Green Deep green Pure green Ultra high-intensity blue Red Amber Orange Yellow Green Deep green Pure green Deep red High-intensity red Red Amber Orange

Side view (inner lens type)

31.5 (flat lens type)

Yellow Green Deep green Pure green Ultra high-intensity pure green Ultra high-intensity blue Blue High-intensity red Ultra high-intensity red Red Ultra high-intensity amber Amber Ultra high-intensity orange Orange Yellow Green Deep green Pure green

31.5 (inner lens type)

SEC4201C SEC4801C SEC4901C SEC4701C SEC4401C SEC4401E-TG SEC4501C SECU4E01C SEC4203C SEC4803C SEC4903C SEC4703C SEC4403C SEC4403E-TG SEC4503C SEC1101C SEC1601C SEC1201C SEC1801C SEC1901C SEC1701C-YG SEC1401C SEC1401E-TG SEC1501C SECU1D01C SECU1E01C SEC1E01C SEC1603C SECS1203C SEC1203C SECS1803C SEC1803C SECS1903C SEC1903C SEC1703C SEC1403C SEC1403E-TG SEC1503C

22

23

24

25

138

Fig. No.

General-purpose LEDs

Surface Mount LEDs

Uni-color / Bi-color Surface Mount LEDs with two elements


Outline Part No. Emitting color
Red Green Green Green High-intensity red Green Orange Green Pure green Pure green Orange Pure green High-intensity red Yellow Amber Green Pure green Pure green Orange Green High-intensity red Yellow Yellow Yellow

Lens color
typ 1.9 2.0 2.0 2.0 1.7 2.0 1.9 2.0 2.0 2.0 1.9 2.0 1.7 2.0 1.9 2.0 2.0 2.0 1.9 2.0 1.7 2.0 2.0 2.0

VF (V)
max 2.5 2.5 2.5 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.2 2.5 2.5 2.5 2.5 2.5 2.5 2.5 2.2 2.5 2.5 2.5

SEC2422C SEC2442C SEC2462C


32.5 (flat lens type)

Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear Clear

Electro-optical characteristics (Ta=25C) Peak wavelength Dominant wavelength IV p (nm) p (nm) (mcd) Condition typ typ typ IF (mA) 20 10 620 630
20 20 20 20 20 10 20 5.0 5.0 10 5.0 20 20 20 30 10 10 20 30 50 50 50 50 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 560 560 560 660 560 587 560 555 555 587 555 660 570 610 560 555 555 587 560 660 570 570 570 567 567 567 642 567 590 567 559 559 590 559 642 571 605 567 559 559 590 567 642 571 571 571

Chip material
GaAsP GaP GaP GaP GaA As GaP GaAsP GaP GaP GaP GaAsP GaP GaA As GaP GaAsP GaP GaP GaP GaAsP GaP GaA As GaP GaP GaP

SEC2492C SEC2552C SEC2592C SEC2762C-YG SEC2484C SEC2554C

26

32.5 (inner lens type)

SEC2494C SEC2764C SEC2774C

27

Fig. No.

139

General-purpose LEDs

Infrared LEDs
Absolute Maximum Ratings
Parameter IF I F I FP VR Top Tstg Unit mA mA /C mA V C C Ratings 150 1.33 1000 5 30 to +85 30 to +100 Above 25C f=1kHz, tw=10s (Ta=25C) Conditions

Infrared LEDs
Outline Part No. Lens color
typ Clear Clear Clear Clear Clear Clear
Transparent light purple Transparent light navy blue Transparent dark navy blue

VF (V)
1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.5 1.5 1.3 1.3 1.5

Electro-optical characteristics (Ta=25C) Radiant intensity Ie Peak wavelength p (nm) (mW/sr) Condition max typ typ
1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.5 1.8 1.8 1.5 1.5 1.8 130 200 80 110 250 80 130 180 200 50 50 7 14 3 IF=50mA (Constant voltage) Vcc=3V, R=2.2 940 940 940 940 940 940 940 940 940 850 850 940 940 850

Chip material
GaAs GaAs GaAs GaAs GaAs GaAs GaAs GaAs GaAs GaAs GaAs GaAs GaAs GaA As

5 Round

3 Round 3 1.5 (inner lens type) chip

SID1010CM SID1K10CM SID1010CXM SID1K10CXM SID1050CM SID303C SID313BP SID1003BQ SID307BR SID1G307C SID1G313C SID2010C SID2K10C SEC1G03C

Contact mount

28

29

30

Clear Clear Clear Clear Clear

31 25

140

Fig. No.

General-purpose LEDs

Ultraviolet LEDs
Absolute Maximum Ratings
Parameter IF I F I FP IR Top Tstg Unit mA mA /C mA mA C C Ratings 30 0.45 100 100 30 to +85 30 to +100 Above 25C f=1kHz, tw=10s
Max. rating of built-in Zener diode

(Ta=25C) Conditions

Ultraviolet Surface Mount LEDs


Outline Part No. Lens color
typ 2.8 3.5

VF (V)
max 4.0

IV (mcd) typ

Peak wavelength

Condition IF(mA) 20

p (nm) typ
385

Electrostatic withstand voltage

(V) typ
4000

Condition 100pF, 1.5k

Chip material
InGaN

SECU1V0AC

Clear

3.7

2.2

32

Fig. No.

Electro-optical characteristics (Ta=25C)

141

General-purpose LEDs

Multi-chip LED Module (under development)


Absolute Maximum Ratings
Parameter IF I F I FP VR Topr Tstg Unit mA mA /C mA V C C Ratings 40 0.25 100 5 30 to +85 30 to +100 f=1kHz, tw=10s (Per element Ta=25C) Conditions
With an infinite heatsink mounted

Part No.

Colors compliant with JIS-Z9112 Cool white Natural white White Warm white Light bulb

Color temperature [K] 20mA 6400 5000 4200 3450 2875

Total flux [lm] 20mA 30 30 30 25 25

Chromaticity x, y 20mA 0.32, 0.33 0.34, 0.35 0.37, 0.37 0.41, 0.38 0.44, 0.41

Fig. No.

SEP8WD4001 SEP8WN4001 SEP8WE4001 SEP8WW4001 SEP8WL4001

33

142

General-purpose LEDs - External Dimensions


(Unit: mm)

0.65max

2-0.50.1

Fig.1

5.60.2

20.0min 5.00.5 19.0min 0.8


Cathode

7.60.2 (1.0)
5.00.2

Fig.6
Cathode (2.54)

4.70.2

Resin heap 1.5max Resin burr 0.3max 4.60.2

(2.54)

1.0min

Anode

23.5min 0.50.1 5.70.2

7.70.5

0.5

0.5

1.1max

0.8

Resin heap 1.5max

Fig.2
5.00.2 5.60.2 1.0min 23.0min Cathode (2.54) (1.0) 7.60.2

Fig.7
Cathode 2.2 (2.54) 4.8

1.0min

25.5min 6.5 0.8


0.5

5.00.2 4.00.2 3.50.1 3.10.1


3.5

1.5

0.50.1

0.65max

0.50.1

Resin heap 1.5max 0.40.1

0.450.1

Fig.3
5.00.2 5.60.2 1.0min 23.0min Cathode (2.54) (1.0) 6.90.2

Fig.8
2.2 (2.54) 4.8

1.1max

Resin heap 1.5max

1.0min

24.5min (1.5)

5.00.2 4.00.2 5.50.5 Resin heap 0.8max Resin heap 0.8max 4.4 4.4

0.50.1

0.65max

0.450.1

Resin heap 1.5max

0.40.1 Cathode

0.65max

0.50.1

Resin heap 0.8max

Fig.4
0.50.1 Anode Resin burr 0.3max 0.50.1 0.65 max Resin heap 0.8max

Fig.9
3.5 0.80.2 1.0min Cathode (2.54) 23.0min (1.7)

4.00.2

(2.54)

5.00.2

0.450.1

1.0min Cathode

21.0min

9.40.3

0.40.1

Fig.5
5.6
0.2

Fig.10
20.0min 5.5 19.0min 0.8
Cathode
0.5

8.2 (1.0)

0.2 0.2

3.5 0.8

1.0min Cathode (2.54)

23.0min 4.50.5 (1.6) 2.50.1

5.00.2

0.50.1

4.00.2

(2.54)

0.450.1

0.5

Resin heap 1.5max

0.40.1

0.65max

1.1max

0.8

0.65max

5.60.2

143

General-purpose LEDs - External Dimensions

(Unit: mm)

Fig.11
0.80.2 3.5

1.0min Cathode (2.54)

3.10.1

4.00.2

3.80.1

0.450.1

(2.54)

4.4

0.450.1

0.40.1

0.65max

Resin heap 0.8max

0.4

0.4

0.1

Cathode mark

Cathode 1.0min 1.7 (2.54)

25.8min (1.3)

3.10.1

Fig.12

3.50.1

Fig.17

0.65max

Resin burr 0.3max Resin heap 1.5max

1.0min

23.0min

4.20.5

0.65max

0.50.1

Cathode 3.6

1.55 1.0min

25.4min

4.00.1 (1.3)

3.10.1

Fig.13

Fig.18
1.0min 23.0min

5.80.5 3.9 3.60.2 6.00.2

(2.54)

3.8

0.65max

0.5+0.1

Cathode 3.6

0.65max

0.40.1 Cathode

0.450.1

Resin heap 1.5max

1.4

(5.0)

6.2

Cathode mark Resin burr 0.3max Resin heap 0.8max 3.1

Fig.14

5.60.2

20.0min 5.00.5 Cathode 19.0min 0.8 (2.54)

5.80.2 (1.0)
4.90.2

Fig.19
0.5
5.80.2
0.1

1.0min 1.5min 17.0min 2.0


(2.54) (2.54)
0.5

0.50.1

10.60.5 1.0 7.60.2


5.00.2

0.50.1

1.1max

0.65max

0.5

Resin heap 1.5max

3 0.50.1

Resin burr 0.3max Resin heap 1.5max 1.2 0.8

0.8

Fig.15

3.5

1.0min

23.0min

4.5 (1.7) 2.50.1


3.50.1

Fig.20

1.0min 1.5min
(2.54) (2.54)

20.0min

3.9

0.2

0.80.2

0.40.1 0.450.1

0.65max

0.65max

0.50.1

0.5+0.1

Cathode

Resin burr 0.3max Resin heap 0.8max

3.6

Resin burr 0.3max Resin heap 1.5max

144

3.3

6.00.2

(2.54)

4.4

4.0

6.2

3.30.2

0.50.1

0.65max

0.4

0.450.1

Resin heap 1.5max

1.4

Cathode mark Resin burr 0.3max Resin heap 0.8max

6.00.2

3.8

(5.0)

6.2

3.10.1

23.0min (1.7) Resin burr 0.3max

5.5 3.50.1

Fig.16
Cathode 1.0min 1.7 25.8min (1.3)

2.60.1

General-purpose LEDs - External Dimensions

(Unit: mm)

Fig.21

1.0min 1.5min 20.0min


(2.54) (2.54)

5.80.5 3.9 3.60.2 6.00.2

Fig.26
2.5 1.5

1.40.1 Cathode (0.5) 0.9 0.60.1 mark Cathode


1.0

0.9

6.2

3.0

2.0

1.5

0.50.1

0.65max

3.6 0.50.1

Resin burr 0.3max Resin heap 1.5max 3.10.2

Anode Resin
B A

Fig.22 SEC4001
Cathode mark 1.0 P.C.B. Resin Cathode MAX 0.1

Fig.27
(1.6) 2.5 3.0 2.0 1.5 2.5 1.5

1.40.1 Cathode (0.5) 0.9 0.60.1 mark Cathode


1.0

1.0

P.C.B.

0.9

(0.6)

3.0

2.0

1.5

1.5 4-R0.35

0.9 1.4
0.1

(0.5) Anode Electrode burr

Lens 0.8 1.8 Resin

Anode P.C.B.

Fig.23 SEC4003
1.5 Cathode mark 1.4 0.9

0.1

(0.5)

1.3

Cathode Electrode burr MAX 0.1 0.45

2.53

2.0 1.7 1.0

3.0

1.6

0.6

Fig.28
Cathode

Lens

P.C.B.

Anode 0.50.1

(2.54)

1.03

Resin

0.50.1

0.65max

1.5

Cathode mark

0.9

(0.5) Cathode
0.6

1.3

Dimension A (mm) SID1010CM 7.60.2 SID1K10CM SID1010CXM 6.90.2 SID1K10CXM

3.0

2.0

1.5

P.C.B. Resin Anode

1.6

Fig.29
0.50.1 1.0min Anode 21.0min 0.50.1
0.65 max

0.50.1

Fig.24

1.4

Resin burr 0.3max Resin heap 1.5max

9.40.3

Fig.25
1.5 Cathode mark 1.4 0.9 Cathode (0.5)
0.6

1.3
(2.54)

5.00.2
5.00.2

5.60.2

1.0min

23.0min

1.0

(1.0)

3.0

2.0

1.7

1.0

Cathode

1.6

Lens

Resin

P.C.B. Anode

0.50.1

Resin burr 0.3max Resin heap 0.8max

145

General-purpose LEDs - External Dimensions

(Unit: mm)

Fig.30
2.0min 5.6 (2.54) 24.0min
Anode

Fig.32
8.50.5 A (0.8)
4.80.2
Surface
3.5 3.2 (2.7)

Side view
1.4 0.2

1.1max 0.85+0.1

0.60.1

Cathode

Resin burr 0.3max Resin heap 1.5max

2.8 (2.4)

0.60.1

Cathode Mark

0.60.1

Side view

Dimension A (mm)
SID303C SID313BP SID1003BQ SID307BR SID1G307C 3.00.5 3.60.5 4.20.5
2.6 Anode

Reverse Side
0.8

Inner circuit ZD LED


Cathode

Anode

Cathode

Fig.31
3.10.1 Cathode 1.7 (2.54)
3.8

Fig.33
1.0min 25.8min (1.3) 3.5
0.1
10.0
16 15 14 13

Resin: color White


13.2 12.0
12 11 10 9

3.5

0.450.1

0.65max

Resin heap 1.5max

Heatsink
2.0
1 2 3 4 5 6 7 8

Resin
0.2 0.05 (0.5)

0.40.1

Mark

0.3 0.05

3.00.25

P1.0*3=3.0 0.25

146

(0.7)

0.4

Resin burr 0.3max

(0.8)

8.8 0.3

4.4

5.8

4.8

Part Number Index in Alphanumeric Order

Part No.

Description
Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor Power transistor MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET MOS FET Power transistor Power transistor Power transistor Ultrafast Recovery Diode (Surface Mount) Ultrafast Recovery Diode (Surface Mount) Power Zener Diode (Surface Mount) Power transistor Array (Surface Mount) Power transistor Array (Surface Mount) Power transistor Array (Surface Mount) High-side Power Switch IC MOS FET Array ( Surface mount ) MOS FET Array ( Surface mount ) MOS FET Array ( Surface mount ) 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount Inner Lens TypeLED

Page

Part No.

Description
3 x 2.5 Surface Mount 2-Chip LED 3 x 2.5 Surface Mount 2-Chip LED 3 x 2.5 Surface Mount 2-Chip LED 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 3 x 2.5 Surface Mount 2-Chip LED 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 3 x 2.5 Surface Mount 2-Chip LED 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 3 x 2.5 Surface Mount 2-Chip LED

Page

Part No.

Description
5 Inverted-cone LED for Surface illumination 5 Round Narrow-directivity LED, Direct mount supported 5 Round Standard LED (With Stopper) 5 Round Standard LED (With Stopper) 5 Round Narrow-directivity LED 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Round Standard LED (With Stopper) 5 Inverted-cone LED for Surface illumination 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Inverted-cone LED for Surface illumination 5 Round Narrow-directivity LED, Direct mount supported 5 Round Narrow-directivity LED, Direct mount supported 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Inverted-cone LED for Surface illumination 5 Round Narrow-directivity LED, Direct mount supported 3 Round Type LED 3 Round Type LED 3 Round Type LED 3 Round Type LED 3 Round Type LED 3 Round Type LED 3 Inverted-cone LED for Surface illumination 3 Round Type Narrow-directivity LED 3 Round Type Narrow-directivity LED 3 Round Type LED 3 Round Type LED 3 Inverted-cone LED for Surface illumination 3 Inverted-cone LED for Surface illumination 3 Round Type Narrow-directivity LED 3 Round Type Narrow-directivity LED 3 Round Type LED 3 Round Type LED 3 Inverted-cone LED for Surface illumination 3 Round Type Narrow-directivity LED 3 Round Type LED 3 Inverted-cone LED for Surface illumination 3 Round Type LED 3 Round Type LED 3 Inverted-cone LED for Surface illumination 3 Round Type Narrow-directivity LED 3 Round Type Narrow-directivity LED 3 Round Type LED 3 Round Type LED 3 Inverted-cone LED for Surface illumination 3 Round Type Narrow-directivity LED 3 Round Type Narrow-directivity LED

Page

2SA1488/A 2SA1567 2SA1568 2SA1908 2SB1622 2SC3852 2SC4024 2SC4065 2SC4153 2SD2141 2SD2382 2SD2633 2SK3710 2SK3711 2SK3724 2SK3800 2SK3801 2SK3803 2SK3851 FKV460S FKV660S FP812 MN611S MN638S MP2-202S MPL-102S PZ628 SDA03 SDA04 SDC09 SDH04 SDK06 SDK08 SDK09 SEC1101C SEC1201C SEC1203C SEC1401C SEC1401E-TG SEC1403C SEC1403E-TG SEC1501C SEC1503C SEC1601C SEC1603C SEC1703C SEC1801C SEC1803C SEC1901C SEC1903C SEC1E01C SEC1G03C

80 81 82 83 84 85 86 87 88 89 90 91 108 109 110 111 112 113 114 115 116 92 93 94 130 130 129 96 97 98 24 117 118 119 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 140

SEC2422C SEC2442C SEC2462C SEC2484C SEC2492C SEC2494C SEC2552C SEC2554C SEC2592C SEC2764C SEC2774C SEC4201C SEC4203C SEC4401C SEC4401E-TG SEC4403C SEC4403E-TG SEC4501C SEC4503C SEC4701C SEC4703C SEC4801C SEC4803C SEC4901C SEC4903C SECS1203C SECS1803C SECS1903C SECU1D01C SECU1E01C SECU1V0AC SECU4E01C SEL1110R SEL1110S SEL1110W SEL1210R SEL1210RM SEL1210S SEL1210SM SEL1213C SEL1250RM SEL1250SM SEL1410E SEL1410EM SEL1410G SEL1410GM SEL1413E SEL1450EKM SEL1450GM-YG SEL1453CEMKT SEL1510C SEL1510CM

139 139 139 139 139 139 139 139 139 139 139 139 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 138 141 138 134 134 134 134 134 134 134 136 134 134 134 134 134 134 136 134 134 134 134 134

SEL1513E SEL1550CM SEL1610C SEL1610W SEL1615C SEL1710K SEL1710KM SEL1710Y SEL1713K SEL1810A SEL1810AM SEL1810D SEL1810DM SEL1813A SEL1850AM SEL1850DM SEL1910A SEL1910AM SEL1910D SEL1910DM SEL1913K SEL1950KM SEL2110R SEL2110S SEL2110W SEL2210R SEL2210S SEL2210W SEL2213C SEL2215R SEL2215S SEL2410E SEL2410G SEL2413E SEL2413G SEL2415E SEL2415G SEL2510C SEL2510G SEL2513E SEL2515C SEL2610C SEL2613CS-S SEL2710K SEL2710Y SEL2713K SEL2715K SEL2715Y SEL2810A SEL2810D SEL2813A SEL2815A SEL2815D

136 134 134 134 134 134 134 134 136 134 134 134 134 136 134 134 134 134 134 134 136 134 135 135 135 135 135 135 136 136 136 136 136 136 136 136 136 136 136 136 136 135 136 136 136 136 136 136 135 135 136 136 136

SEC2762C-YG 3 x 2.5 Surface Mount 2-Chip LED


3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED 3 x 2.5 Surface Mount Inner Lens Type 2-Chip LED Side-view Surface Mount LED Side-view Surface Mount Inner Lens TypeLED Side-view Surface Mount LED Side-view Surface Mount LED Side-view Surface Mount Inner Lens TypeLED Side-view Surface Mount Inner Lens TypeLED Side-view Surface Mount LED Side-view Surface Mount Inner Lens TypeLED Side-view Surface Mount LED Side-view Surface Mount Inner Lens TypeLED Side-view Surface Mount LED Side-view Surface Mount Inner Lens TypeLED Side-view Surface Mount LED Side-view Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount LED 2.8 x 3.5 Ultraviolet Surface Mount LED Side-view Surface Mount LED 5 Round Standard LED (With Stopper) 5 Round Standard LED (With Stopper) 5 Round Standard LED (With Stopper) 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Inverted-cone LED for Surface illumination 5 Round Narrow-directivity LED, Direct mount supported 5 Round Narrow-directivity LED, Direct mount supported 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Round Standard LED (With Stopper) 5 Round Standard LED 5 Inverted-cone LED for Surface illumination 5 Round Narrow-directivity LED, Direct mount supported 5 Round Narrow-directivity LED, Direct mount supported 4.6 x 5.6 Egg-shaped LED 5 Round Standard LED (With Stopper) 5 Round Standard LED

SEC1701C-YG 3 x 1.5 Surface Mount LED


3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount LED 3 x 1.5 Surface Mount Inner Lens TypeLED 3 x 1.5 Surface Mount LED 3 x 1.5 Infrared Surface Mount Inner Lens Type LED

147

Part Number Index in Alphanumeric Order

Part No.

Description
3 Round Type LED 3 Round Type LED 3 Inverted-cone LED for Surface illumination 3 Round Type Narrow-directivity LED 3 Round Type Narrow-directivity LED 3 Round Type LED 4 Round Type LED 4 Round Type LED 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type LED 4 Round Type LED 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type LED 4 Round Type LED 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type LED 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type LED 4 Round Type LED 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type LED 4 Round Type LED 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type LED 4 Round Type LED 4 Round Type Wide-directivity LED, Direct mount supported 4 Round Type Wide-directivity LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Narrow-directivity LED, Direct mount supported 3 Round Type LED, Direct mount supported

Page

Part No.

Description
3 Round Type LED, Direct mount supported

Page

Part No.

Description

Page

SEL2910A SEL2910D SEL2913K SEL2915A SEL2915D SEL2E10C SEL4110R SEL4110S SEL4114R SEL4114S SEL4210R SEL4210S SEL4214R SEL4214S SEL4410E SEL4410G SEL4414E SEL4414G SEL4510C SEL4514C SEL4710K SEL4710Y SEL4714K SEL4714Y SEL4810A SEL4810D SEL4814A SEL4814D SEL4910A SEL4910D SEL4914A SEL4914D SEL5220S SEL5223S SEL5420E SEL5423E SEL5520C SEL5523C SEL5620C SEL5723C SEL5820A SEL5823A SEL5920A SEL5923A SEL5E20C SEL5E23C SEL6110R SEL6110S SEL6210R SEL6210S SEL6214S SEL6215S SEL6410E

136 136 136 136 136 136 134 134 135 135 134 134 135 135 135 135 135 135 135 135 134 134 135 135 134 134 135 135 134 134 135 135 136 136 136 136 136 136 136 136 136 136 136 136 136 136 135 135 135 135 135 135 135

SEL6410G SEL6413E SEL6413E-TG SEL6414E SEL6414E-TG SEL6415E SEL6510C SEL6510G SEL6513C SEL6514C SEL6515C SEL6710K SEL6710Y SEL6714K SEL6714W SEL6715C SEL6810A SEL6810D SEL6814A SEL6910A SEL6910D SEL6914A SEL6914W SEL6915A SEL6E10C SELS1E10CXM-M SELS5223C SELS5923C SELS5B23C SELS6B13W SELS6B14C SELS6D14C SELS6E14C-M SELU1210CXM SELU1250CM SELU1253CMKT SELU1D10CXM SELU1D50CM SELU1E10CXM SELU1E50CM SELU2215R-S SELU2610C-S SELU2710C SELU2B10A-S SELU2D10C SELU2E10C SELU4410CKT-S SELU5220C-S SELU5620S-S SELU5720C SELU5723C SELU5820C-S

135 136 136 135 135 135 135 135 136 135 135 135 135 135 135 135 135 135 135 135 135 135 135 135 135 134 136 136 136 136 135 135 135 134 134 134 134 134 134 134 134 136 135 136 135 136 136 135 136 136 136 136 136

3 Inverted-cone LED for Surface illumination, Direct mount supported 3 Inverted-cone LED for Surface illumination, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Narrow-directivity LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Inverted-cone LED for Surface illumination, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Narrow-directivity LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Narrow-directivity LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Narrow-directivity LED, Direct mount supported 3 Round Type LED, Direct mount supported 5 Round Wide-directivity LED 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 3 Inverted-cone LED for Surface illumination, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported 5 Round Wide-directivity LED 5 Round Narrow-directivity LED, Direct mount supported 4.6 x 5.6 Egg-shaped LED

Pitch Lead Rectangular LED, SELU5B20C 5mm Direct mount supported Pitch Lead Bow-shaped LED, SELU5E23C 5mm Direct mount supported 3 Inverted-cone LED for Surface illumination, SELU6213C-S Direct mount supported Round Type Wide-directivity LED, SELU6214C 3 Direct mount supported 3 Round Type Wide-directivity LED, SELU6414G-S Direct mount supported Round Type Wide-directivity LED, SELU6614C-S 3 Direct mount supported 3 Round Type Wide-directivity LED, SELU6614W-S Direct mount supported Round Type Wide-directivity LED, SELU6714C 3 Direct mount supported

136 136 136 135 135 135 135 135 135 135 142 142 142 142 142 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 130 129 127 127 127 127 127 127 127 127 127 127 127 127 127 127 127 127 127

SELU6910C-S SELU6914C-S SEP8WD4001 SEP8WE4001 SEP8WL4001 SEP8WN4001 SEP8WW4001 SFPB-54 SFPB-56 SFPB-59 SFPB-64 SFPB-66 SFPB-69 SFPB-74 SFPB-76 SFPE-64 SFPJ-53 SFPJ-63 SFPJ-73 SFPL-52 SFPL-62 SFPL-64 SFPM-52 SFPM-54 SFPM-62 SFPM-64 SFPW-56 SFPZ-68 SG-9CNR SG-9CNS SG-9CZR SG-9CZS SG-9LCNR SG-9LCNS SG-9LLCNR SG-9LLCNS SG-9LLCZR SG-9LLCZS SG-10LLR SG-10LLS SG-10LLXR SG-10LLXS SG-10LLZ23R SG-10LLZ23S SG-10LR

3 Round Type LED, Direct mount supported 3 Round Type Wide-directivity LED, Direct mount supported Multi-chip LED Module Multi-chip LED Module Multi-chip LED Module Multi-chip LED Module Multi-chip LED Module Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Ultrafast Recovery Diode(Surface Mount) Ultrafast Recovery Diode(Surface Mount) Ultrafast Recovery Diode(Surface Mount) Rectifier Diode(Surface Mount) Rectifier Diode(Surface Mount) Rectifier Diode(Surface Mount) Rectifier Diode(Surface Mount) Schottky Barrier Diode(Surface Mount) Power Zener Diode Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator

SELU1910CXM-S 5 Round Wide-directivity LED


5 Round Wide-directivity LED 5 Round Narrow-directivity LED, Direct mount supported 5 Round Wide-directivity LED 5 Round Narrow-directivity LED, Direct mount supported 3 Round Type Narrow-directivity LED 3 Round Type LED 3 Round Type LED 3 Round Type LED 3 Round Type LED 3 Round Type LED 4 Round Type LED 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported 5mm Pitch Lead Bow-shaped LED, Direct mount supported 5mm Pitch Lead Rectangular LED, Direct mount supported

148

Part Number Index in Alphanumeric Order

Part No.

Description
Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator Rectifier Diode for Alternator High-Voltage Rectifier Diode for Ignition Coil High-Voltage Rectifier Diode for Ignition Coil High-Voltage Rectifier Diode for Ignition Coil Linear Regulator IC Linear Regulator IC Linear Regulator IC Linear Regulator IC Switching Regulator IC System Regulator IC High-side Power Switch IC High-side Power Switch IC High-side Power Switch IC High-side Power Switch IC High-side Power Switch IC Full-bridge Motor Driver IC 5 Round Infrade LED 5 Round Infrade LED 5 Round Infrade LED 5 Round Infrade LED, Direct mount supported 5 Round Infrade LED 5 Round Infrade LED 5 Round Infrade LED 5 Round Infrade LED 3 Round Infrade LED 3 Round Infrade LED 5 Round Infrade LED 5 Round Infrade LED 5 Round Infrade LED Power Zener Diode (Surface Mount) Power Zener Diode (Surface Mount) Power Zener Diode (Surface Mount) Power Zener Diode (Surface Mount) Power Zener Diode (Surface Mount) High Voltage Driver IC for HID Lamps High Voltage Driver IC for HID Lamps High-side Power Switch IC High-side Power Switch IC Stepper-motor Driver IC MOS FET Array MOS FET Array Power transistor Array High Voltage Driver IC for HID Lamps MOS FET Array 5 Round Standard Bicolor LED 5 Round Standard Bicolor LED 5 Round Standard Bicolor LED

Page

Part No.

Description
5 Round Standard Bicolor LED 5 Round Standard Bicolor LED 5 Round Standard Bicolor LED 3.3 x 6 Rectangular Type Bicolor LED 3.3 x 6 Bow-Shaped Type Bicolor LED 3.3 x 6 Bow-Shaped Type Bicolor LED 3.3 x 6 Rectangular Type Bicolor LED 3.3 x 6 Bow-Shaped Type Bicolor LED 3.3 x 6 Rectangular Type Bicolor LED 3.3 x 6 Bow-Shaped Type Bicolor LED 3.3 x 6 Bow-Shaped Type Bicolor LED

Page

SG-10LS SG-10LXR SG-10LXS SG-10LZ23R SG-10LZ23S SG-14LXZS SG-14LXZS SHV-01JN SHV-05J SHV-06JN SI-3001S SI-3003S SI-3101S SI-3102S SI-3201S SI-3322S SI-5151S SI-5152S SI-5153S SI-5154S SI-5155S SI-5300 SID1003BQ SID1010CM SID1010CXM SID1050CM SID1G307C SID1G313C SID1K10CM SID1K10CXM SID2010C SID2K10C SID303C SID307BR SID313BP SJPZ-E18 SJPZ-E27 SJPZ-E33 SJPZ-E36 SJPZ-K28 SLA2402M SLA2403M SLA2501M SLA2502M SLA4708M SLA5027 SLA5098 SLA8004 SMA2409M SMA5113 SML11516C SML1216C SML1216W

127 127 127 127 127 127 127 128 128 128 8 10 12 14 22 16 26 28 30 32 34 60 140 140 140 140 140 140 140 140 140 140 140 140 140 129 129 129 129 129 64 68 36 38 56 120 121 99 72 122 137 137 137

SML1516W SML1816W SML19416W SML72420C SML72423C SML72923C SML78420C SML78423C SML79420C SML79423C SMLS79723C SMLU12E16C SMLU12E16W SMLU18D16C SMLU18D16W-S SMLU72423C-S SMLU79423C-S SPF0001 SPF3004 SPF3006 SPF5002A SPF5003 SPF5004 SPF5007 SPF5009 SPF5012 SPF5017 SPF5018 SPF7211 SPF7301 SSD103 STA315A STA335A STA415A STA460C STA461C STA463C STA464C STA508A STA509A SZ-10N27 SZ-10N40 SZ-10NN27 SZ-10NN40 TFC561D TFC562D

137 137 137 137 137 137 137 137 137 137 137 137 137 137 137 137 137 137 100 18 20 50 40 42 44 52 54 46 48 58 62 95 101 102 103 104 105 106 107 123 124 129 129 129 129 125 126

SMLU12D16W 5 Round Standard Bicolor LED


5 Round Standard Bicolor LED 5 Round Standard Bicolor LED 5 Round Standard Bicolor LED 5 Round Standard Bicolor LED 3.3 x 6 Bow-Shaped Type Bicolor LED 3.3 x 6 Bow-Shaped Type Bicolor LED Power transistor Array (Surface Mount) System Regulator IC System Regulator IC Low-side Power Switch IC High-side Power Switch IC High-side Power Switch IC High-side Power Switch IC Low-side Power Switch IC Low-side Power Switch IC High-side Power Switch IC High-side Power Switch IC Stepper-motor Driver IC Full-bridge Motor Driver IC Power transistor Power transistor Array Power transistor Array Power transistor Array Power transistor Array Power transistor Array Power transistor Array Power transistor Array MOS FET Array MOS FET Array Power Zener Diode (Surface Mount) Power Zener Diode (Surface Mount) Power Zener Diode (Surface Mount) Power Zener Diode (Surface Mount) 3-Pin Reverce Conducting Thyrisyor for HID Lamp Ignition 3-Pin Reverce Conducting Thyrisyor for HID Lamp Ignition

149

http://www.sanken-ele.co.jp SANKEN ELECTRIC CO.,LTD.


1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo Tel: 81-3-3986-6164 Fax: 81-3-3986-8637

ISO 9001/14001 Certified

Sanken products are manufactured and delivered to the customer based on a strict quality and environmental control system established and certified by the ISO 9001/14001 international certification standards.

I Products: Power IC, Control IC, Hall IC, Bipolar Transistor, MOS FET, IGBT, Thyristor, Rectifier Diode, LED (Light Emitting Diode), CCFL (Cold Cathode Fluorescent Lamp), Switching Power Supply, UPS (Uninterruptible Power Supply), DC Power Supply, Inverter, Universal Airway Beacon System and Other Power Supplies and Equipments

Overseas Sales Offices Asia Singapore


Sanken Electric Singapore Pte. Ltd.
150 Beach Road, #14-03 The Gateway West Singapore 189720, Singapore Tel: 65-6291-4755 Fax: 65-6297-1744

North America
Allegro MicroSystems, Inc.
115 Northeast Cutoff, Worcester, MA 01606 General Information Tel: 1-508-853-5000 Fax: 1-508-853-3353

China
Sanken Electric Hong Kong Co., Ltd.
Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 852-2735-5262 Fax: 852-2735-5494

Europe
Sanken Power Systems (UK) Ltd.
Abercynon, Mountain Ash, Mid Glamorgan CF45 4XA, U.K. Tel: 44-1443-742-333 Fax: 44-1443-743-354

Sanken Electric (Shanghai) Co., Ltd.


Room 3202, Maxdo Centre, Xingyi Road 8 Changning district, Shanghai, China Tel: 86-21-5208-1177 Fax: 86-21-5208-1757

Korea
Sanken Electric Korea Co., Ltd.
Mirae Asset Life Bldg., 6F 168, Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea Tel: 82-2-714-3700 Fax: 82-2-3272-2145

Taiwan
Taiwan Sanken Electric Co., Ltd.
Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C. Tel: 886-2-2356-8161 Fax: 886-2-2356-8261

The information contained in this document is correct as of July 2006. This is notification that you, as purchaser of the products/technology, are not allowed to perform any of the following: 1. Resell or retransfer these products/technology to any party intending to disturb international peace and security. 2. Use these products/technology yourself for activities disturbing international peace and security. 3. Allow any other party to use these products/technology for activities disturbing international peace and security. Also, as purchaser of these products/technology, you agree to follow the procedures for the export or transfer of these products/technology, under the Foreign Exchange and Foreign Trade Law, when you export or transfer the products/technology abroad.

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