2SK4012

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (-MOSVI)

2SK4012
Switching Regulator Applications
z Low drainsource ON-resistance z High forward transfer admittance z Low leakage current z Enhancement mode : RDS (ON) = 0. 33 (typ.) : |Yfs| = 8.5 S (typ.) Unit: mm

: IDSS = 100 A (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25C)

Characteristic Drainsource voltage Draingate voltage (RGS = 20 k) Gatesource voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 30 13 52 45 1170 13 4.5 150 55~150 Unit V V V A A W mJ A mJ C C

Pulse (Note 1)

Drain power dissipation (Tc = 25C) Single-pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy (Note 3) Channel temperature Storage temperature range

1: Gate 2: Drain 3: Source

JEDEC JEITA TOSHIBA

SC-67 2-10U1B

Weight: 1.7 (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
2
Characteristic Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (chc) Rth (cha) Max 2.78 62.5 Unit C / W C / W

Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 11.8 mH, RG = 25 , IAR = 13 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.
3

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Electrical Characteristics (Ta = 25C)
Characteristic Gate leakage current Gatesource breakdown voltage Drain cutoff current Drainsource breakdown voltage Gate threshold voltage Drainsource ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS V (BR) GSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 13 A Duty < = 1%, tw = 10 s 10 V VGS 0V 15 ID = 6.5 A VOUT VDS = 25 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 25 V, VDS = 0 V IG = 10 A, VDS = 0 V VDS = 500 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 6.5 A VDS = 10 V, ID = 6.5 A Min 30 500 2.0 4.0 Typ. 0.33 8.5 2400 18 220 25 Max 10 100 4.0 0.4 pF Unit A V A V V S

Turnon time Switching time Fall time

RL = 31 VDD 200 V

70

ns

10

Turnoff time Total gate charge (gatesource plus gatedrain) Gatesource charge Gatedrain (Miller) charge

95 50 30 20

nC

SourceDrain Ratings and Characteristics (Ta = 25C)

Characteristic Continuous drain reverse current (Note 1) Pulse drain reverse current (Note 1) Forward voltage (diode) Reverse recovery time Reverse recovery charge Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 13 A, VGS = 0 V IDR = 13 A, VGS = 0 V dIDR / dt = 100 A / s Min Typ. 1000 11 Max 13 52 1.7 Unit A A V ns C

Marking

K4012

Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish.

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ID VDS
10 COMMON SOURCE Tc = 25C PULSE TEST 10 8 6 20 8,10

ID VDS
COMMON SOURCE Tc = 25C PULSE TEST

DRAIN CURRENT ID (A)

6 5.25 4 5 2 4.75 4.5 VGS = 4 V 0 0 1 2 3 4 5

DRAIN CURRENT ID (A)

16

12

6 5.75

8 5.5 5.25 4 5 4.75 4.5 0 0 10 20 30 VGS = 4 V 40 50

DRAINSOURCE VOLTAGE VDS (V)

DRAINSOURCE VOLTAGE VDS (V)

ID VGS
50

VDS VGS
10

DRAIN CURRENT ID (A)

40

DRAINSOURCE VOLTAGE VDS (V)

COMMON SOURCE VDS = 20 V PULSE TEST

Tc = 55C

COMMON SOURCE Tc = 25C PULSE TEST

25 30 100 20

13

10

6 ID = 3 A

10

12

16

20

GATESOURCE VOLTAGE VGS

(V)

GATESOURCE VOLTAGE VGS

(V)

Yfs ID
100

RDS (ON) ID
1

FORWARD TRANSFER ADMITTANCE Yfs (S)

Tc = 55C 25 10 100

DRAINSOURCE ON-RESISTANCE RDS (ON) ()

COMMON SOURCE VDS = 20 V PULSE TEST

COMMON SOURCE Tc = 25C PULSE TEST

VGS = 10 V

15

1 1

10

100

0.1 0.1

10

100

DRAIN CURRENT ID (A)

DRAIN CURRENT ID (A)

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RDS (ON) Tc
COMMON SOURCE VGS = 10 V PULSE TEST

IDR VDS
100

0.8

DRAIN REVERSE CURRENT IDR (A)

1.0

DRAINSOURCE ON-RESISTANCE RDS (ON) ()

COMMON SOURCE Tc = 25C PULSE TEST

10

0.6

ID = 13A

0.4 3 0.2

10 5 3 1 VGS = 0, 1 V 0.6 0.8 1.0 1.2

0 80

40

40

80

120

160

0.1 0

0.2

0.4

CASE TEMPERATURE

Tc (C)

DRAINSOURCE VOLTAGE VDS (V)

C VDS
10000 5 Ciss

Vth Tc
Vth (V) GATE THRESHOLD VOLTAGE

(pF)

1000

CAPACITANCE C

Coss

100 COMMON SOURCE VGS = 0 V f = 1 MHz Tc = 25C 10 0.1 1 10

Crss 100

COMMON SOURCE VDS = 10 V ID = 1 mA PULSE TEST

DRAINSOURCE VOLTAGE VDS (V)

CASE TEMPERATURE

Tc (C)

PD Tc
50 500

DYNAMIC INPUT/OUTPUT CHARACTERISTICS

DRAINSOURCE VOLTAGE VDS (V)
COMMON SOURCE ID = 13 A Tc = 25C PULSE TEST VDS 20

DRAIN POWER DISSIPATION PD (W)

40

400

400

16

20

200

200

200

10

100

VGS VDS = 100 V

0 0

40

80

120

160

200

20

40

60

80

0 100

CASE TEMPERATURE

Tc (C)

TOTAL GATE CHARGE Qg (nC)

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Gatesource voltage

30

300

VDS = 100 V

400

12

VGS (V)

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NORMALIZED TRANSIENT THERMAL IMPEDANCE rth (t)/Rth (ch-c)

rth tw
10

Duty = 0.5 0.2

0.1

0.1 0.05 0.02 PDM t SINGLE PULSE 0.01 T Duty = t/T Rth (ch-c) = 2.78C/W

0.01

0.001 10

100

10

100

10

PULSE WIDTH tw

(s)

SAFE OPERATING AREA

100 ID max (PULSE) * 1200

EAS Tch
AVALANCHE ENERGY EAS (mJ)

100 s * ID max (CONTINUOUS) * 10 1 ms *

1000

800

DRAIN CURRENT ID (A)

600

DC OPERATION Tc = 25C

400

200

0.1 *: SINGLE NONREPETITIVE PULSE Tc = 25C Curves must be derated linearly with increase in temperature 0.01 1 10 VDSS max 100 1000

0 25

50

75

100

125

150

CHANNEL TEMPERATURE (INITIAL)

Tch (C)

15 V 15 V

BVDSS IAR VDD VDS

DRAINSOURCE VOLTAGE VDS (V)

TEST CIRCUIT RG = 25 VDD = 90 V, L = 11.8 mH

WAVEFORM

AS =

1 B VDSS L I2 B 2 V VDSS DD

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RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

20070701-EN

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

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