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DG201B/202B

Vishay Siliconix

Improved Quad CMOS Analog Switches

FEATURES
D D D D D D D D "22-V Supply Voltage Rating TTL and CMOS Compatible Logic Low On-ResistancerDS(on): 45 W Low LeakageID(on): 20 pA Single Supply Operation Possible Extended Temperature Range Fast SwitchingtON: 120 ns Low GlitchingQ: 1 pC

BENEFITS
D D D D D D D Wide Analog Signal Range Simple Logic Interface Higher Accuracy Minimum Transients Reduced Power Consumption Superior to DG201A/202 Space Savings (TSSOP)

APPLICATIONS
D D D D D D D Industrial Instrumentation Test Equipment Communications Systems Disk Drives Computer Peripherals Portable Instruments Sample-and-Hold Circuits

DESCRIPTION
The DG201B/202B analog switches are highly improved versions of the industry-standard DG201A/202. These devices are fabricated in Vishay Siliconix proprietary silicon gate CMOS process, resulting in lower on-resistance, lower leakage, higher speed, and lower power consumption. up to "22-V input signals, and have an improved continuous current rating of 30 mA. An epitaxial layer prevents latchup.

All devices feature true bi-directional performance in the on condition, and will block signals to the supply voltages in the off condition. These quad single-pole single-throw switches are designed for a wide variety of applications in telecommunications, instrumentation, process control, computer peripherals, etc. An improved charge injection compensation design minimizes switching transients. The DG201B and DG202B can handle

The DG201B is a normally closed switch and the DG202B is a normally open switch. (See Truth Table.)

FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION

DG201B Dual-In-Line, SOIC and TSSOP


IN1 D1 S1 V GND S4 D4 IN4 IN2 D2 S2 V+ NC S3 D3 IN3

1 2 3 4 5 6 7 8 Top View

16 15 14 13 12 11 10 9

TRUTH TABLE
Logic
0 1

DG201B
ON OFF Logic 0 v 0.8 V Logic 1 w 2.4 V

DG202B
OFF ON

Document Number: 70037 S-52433Rev. G, 06-Sep-99

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DG201B/202B
Vishay Siliconix
ORDERING INFORMATION
Temp Range Package
16-Pin Plastic DIP

Part Number
DG201BDJ DG202BDJ DG201BDK DG202BDK DG201BDY DG202BDY DG201BDQ DG202BDQ DG201BAK

16-Pin CerDIP 40 40 to 85_C 16-Pin Narrow SOIC

16-Pin TSSOP

55 to 125_C 55

16 Pi CerDIP C DIP 16-Pin

DG201BAK/883 DG202BAK DG202BAK/883

ABSOLUTE MAXIMUM RATINGS


Voltages Referenced to V V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V) 2 V to (V+) +2 V or 30 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (AK, DK Suffix) . . . . . . . . . . . . . . 65 to 150_C (DJ, DY, DQ Suffix) . . . . . . . . . . 65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Narrow SOIC and TSSOPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW 16-Pin CerDIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C e. Derate 12 mW/_C above 75_C

SCHEMATIC DIAGRAM (TYPICAL CHANNEL)

V+ 5V Reg Level Shift/ Drive INX V V+ SX

DX GND V

FIGURE 1.

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Document Number: 70037 S-52433Rev. G, 06-Sep-99

DG201B/202B
Vishay Siliconix
SPECIFICATIONSa
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance rDS(on) Match Source Off Leakage Current VANALOG rDS(on) DrDS(on) IS(off) ID(off) ID(on) VS = "14 V, VD = #14 V VD = "14 V, VS = #14 V VS = VD = "14 V VD = "10 V, IS = 1 mA Full Room Full Room Room Full Room Full Room Full 45 2 "0.01 "0.01 "0.02

A Suffix
55 to 125_C

D Suffix
40 to 85_C

Symbol

V+ = 15 V, V = 15 V VIN = 2.4 V, 0.8 Vf

Tempb

Typc

Mind Maxd Mind Maxd

Unit

-15

15 85 100

-15

15 85 100

-0.5 -20 -0.5 -20 -0.5 -40

0.5 20 0.5 20 0.5 40

0.5 5

0.5 5 0.5 5 0.5 10 nA A

Drain Off Leakage Current

-0.5 -5 -0.5 -10

Drain On Leakage Current

Digital Control
Input Voltage High Input Voltage Low Input Current Input Capacitance VINH VINL IINH or IINL CIN VINH or VINL Full Full Full Room 5 1

2.4 0.8 1

2.4 0.8
1

V mA pF

Dynamic Characteristics
Turn-On Time Turn-Off Time tON tOFF Q CS(off) CD(off) CD(on) OIRR XTALK CL = 1000 pF, Vg = 0 V Rg = 0 W VS = 0 V, f = 1 MHz VD = VS = 0 V, f = 1 MHz CL = 15 pF, RL = 50 W VS = 1 VRMS, f = 100 kHz VS = 2 V S S it hi Ti T t Circuit Ci it See Switching Time Test Room Full Room Full Room Room Room Room Room Room 120 65

300 200

300 200
ns

Charge Injection Source-Off Capacitance Drain-Off Capacitance Channel On Capacitance Off Isolation Channel-to-Channel Crosstalk

1 5 5 16 90

pC

pF F

dB 95

Power Supply
Positive Supply Current Negative Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 or 5 V I VOP Room Full Room Full Full

100 -1 -5
"4.5 "22

50

100 -1 -5
"4.5 "22

50

mA

Document Number: 70037 S-52433Rev. G, 06-Sep-99

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DG201B/202B
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLYa
Test Conditions Unless Specified Parameter Analog Switch
Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) VD = 3 V, 8 V, IS = 1 mA Full Room Full 90

A Suffix
55 to 125_C

D Suffix
40 to 85_C

Symbol

V+ = 12 V, V = 0 V VIN = 2.4 V, 0.8 Vf

Tempb

Typc

Mind

Maxd

Mind

Maxd

Unit

12 160 200

12 160 200

V W

Dynamic Characteristics
Turn-On Time Turn-Off Time Charge Injection tON tOFF Q VS = 8 V S S See Switching it hi Ti Time Test T t Circuit Ci it CL = 1 nF, Vgen= 6 V, Rgen = 0 W Room Room Room 120 60 4

300 200

300 200

ns

pC

Power Supply
Positive Supply Current Negative Supply Current Power Supply Range for Continuous Operation I+ VIN = 0 or 5 V I VOP Room Full Room Full Full

100 -1 -5
)4.5 )25

50

100 -1 -5
)4.5 )25

50

mA

Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function.

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Document Number: 70037 S-52433Rev. G, 06-Sep-99

DG201B/202B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
rDS(on) vs. VD and Power Supply Voltages
110 100 90 80 r DS(on) ( W ) 70 60 50 40 30 20 10 20 16 12 8 4 0 4 8 12 16 20 VD Drain Voltage (V) "20 V "10 V "15 V "5 V r DS(on) ( W ) 100 90 80 70 60 50 40 30 20 10 0 15 125_C 85_C 25_C 55_C V+ = 15 V V = 15 V

rDS(on) vs. VD and Temperature

10

10

15

VD Drain Voltage (V)

rDS(on) vs. VD and Single Power Supply Voltages


250 225 200 175 r DS(on) ( W ) 150 125 10 V 100 75 50 25 0 0 2 4 6 8 10 12 14 16 VD Drain Voltage (V) 0 12 V 15 V 0.5 V TH ( V ) 7V 1.5 V+ = 5 V 2 2.5

Input Switching Threshold vs. Supply Voltage

10

12

14

16

18

20

V+ Positive Supply (V)

Leakage Currents vs. Analog Voltage


80 60 40 I S,I D Current (pA) 20 0 20 40 60 80 20 15 10 5 0 5 Temperature (_C) 10 15 20 1 pA 55 IS(off), ID(off) I S, I D Current 100 pA V+ = 22 V V = 22 V TA = 25_C 1 nA

Leakage Currents vs. Temperature


V+ = 15 V V = 15 V VS, VD = "14 V

IS(off), ID(off) 10 pA

ID(on)

35

15

25

45

65

85

105 125

Temperature (_C)

Document Number: 70037 S-52433Rev. G, 06-Sep-99

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DG201B/202B
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Switching Time vs. Single Supply Voltage
500 V = 0 V 400 300 Switching Time (ns) 300 Switching Time (ns) 400

Switching Time vs. Power Supply Voltage

200

200 ton 100 toff 0 2 4 6 8 10 12 14 16 18 20 V+ Positive Supply (V)

ton 100 toff

0 0

"4

"8

"12

"16

"20

V+, V Positive and Negative Supplies (V)

QS, QD Charge Injection vs. Analog Voltage


30 120 110 100 Q Charge (pC) 10 OIRR (dB) V+ = 15 V V = 15 V V+ = 12 V V = 0 V 10 60 20 50 40 10 5 0 5 10 15 10 k 90

Off Isolation vs. Frequency


V+ = 15 V V = 15 V

20

RL = 50 W 80 70

30 15

100 k

1M

10 M

VANALOG Analog Voltage (V)

f Frequency (Hz)

Supply Current vs. Switching Frequency


4

I+ Supply Current (mA)

0 1k 10 k 100 k 1M

f Frequency (Hz)

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Document Number: 70037 S-52433Rev. G, 06-Sep-99

DG201B/202B
Vishay Siliconix
TEST CIRCUITS
+15 V

V+ VS = +2 V S IN 3V GND V D VO RL 1 kW CL 35 pF

Logic Input

3V 50% 0V tOFF 90% tr <20 ns tf <20 ns

Switch Output 15 V VO = VS RL RL + rDS(on)

VO tON

FIGURE 2. Switching Time

+15 V C +15 V C VS
V+

V+ S1 Rg = 50 W IN1 0V, 2.4 V S2 NC GND V C IN2 GND 15 V C = RF bypass VS VO VS VO 15 V V C RL D2 D1 50 W

VS Rg = 50 W 0V, 2.4 V

VO

IN

RL

VO

0V, 2.4 V

Off Isolation = 20 log

XTALK Isolation = 20 log

FIGURE 3. Off Isolation

FIGURE 4. Channel-to-Channel Crosstalk

+15 V DVO Rg V+ S IN 3V GND V DVO = measured voltage error due to charge injection The charge injection in coulombs is Q = CL x DVO 15 V D VO CL 1000 pF INX ON OFF ON VO

Vg

FIGURE 5. Charge Injection

Document Number: 70037 S-52433Rev. G, 06-Sep-99

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DG201B/202B
Vishay Siliconix
APPLICATIONS
+15 V V+

Logic Input Low = Sample High = Hold 1 kW +15 V 15 V LM101A VIN + 5 MW 5.1 MW V 30 pF J507 15 V Aquisition Time Aperature Time Sample to Hold Offset Droop Rate = 25 ms = 1 ms = 5 mV = 5 mV/s 15 V 2N4400 50 pF 200 W 1000 pF J500 VOUT J202

+15 V

DG201B

FIGURE 6. Sample-and-Hold
+15 V 160 C4 fC4 Select fC3 Select TTL Control fC2 Select fC1 Select 150 pF C3 Voltage Gain dB 1500 pF C2 0.015 mF C1 0.15 mF 80 fC1 40 fC2 fC3 fC4 V1 120

0 V

fL1

fL2

fL3

fL4

DG201B

GND 40 1 10 100 1k 10 k 100 k 1M

15 V +15 V R1 = 10 kW LM101A + R2 = 10 kW 30 pF

R3 = 1 MW

f Frequency (Hz) R3 R1

15 V

VOUT

AL (Voltage Gain Below Break Frequency) = 1 fC (Break Frequency) = 2pR3CX fL (Unity Gain Frequency) = rDS(on)
Max Attenuation =

= 100 (40 dB)

1 2pR1CX  47 dB

10 kW

FIGURE 7. Active Low Pass Filter with Digitally Selected Break Frequency

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Document Number: 70037 S-52433Rev. G, 06-Sep-99

DG201B/202B
Vishay Siliconix
APPLICATIONS

+5 V

+15 V

30 pF

VIN1

VL

V+

+15 V + LM101A

VIN2

DG419
15 V CH GND V

+15 V

RF1 18 kW

RF1 9.9 kW

RF1 100 kW

DG202B

15 V Gain 1 (x1) Gain 2 (x10) Gain 3 (x100) Gain 4 (x1000) V Logic High = Switch On 15 V GND RG1 2 kW RG2 100 W RG3 100 W

Gain =

RF + RG RG

FIGURE 8. A Precision Amplifier with Digitally Programable Input and Gains

Document Number: 70037 S-52433Rev. G, 06-Sep-99

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