PD - 91742A

IRF9Z24NS/L
HEXFET Power MOSFET
Advanced Process Technology Surface Mount (IRF9Z24NS) l Low-profile through-hole (IRF9Z24NL) l 175C Operating Temperature l P-Channel l Fast Switching l Fully Avalanche Rated Description
l l

VDSS = -55V RDS(on) = 0.175

ID = -12A
S

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF9Z24NL) is available for low-profile applications.

D 2 P ak

T O -26 2

Absolute Maximum Ratings

Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds

Max.
-12 -8.5 -48 3.8 45 0.30 20 96 -7.2 4.5 -5.0 -55 to + 175 300 (1.6mm from case )

Units
A W W W/C V mJ A mJ V/ns C

Thermal Resistance
Parameter
RJC RJA Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)**

Typ.

Max.
3.3 40

Units
C/W

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IRF9Z24NS/L
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ

RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS Ciss Coss Crss

Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance

Min. -55 -2.0 2.5

Typ. -0.05 13 55 23 37

Max. Units Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA 0.175 VGS = -10V, ID = -7.2A -4.0 V VDS = VGS, ID = -250A S VDS = -25V, ID = -7.2A -25 VDS = -55V, VGS = 0V A -250 VDS = -44V, VGS = 0V, T J = 150C 100 VGS = 20V nA -100 VGS = -20V 19 ID = -7.2A 5.1 nC VDS = -44V 10 VGS = -10V, See Fig. 6 and 13 VDD = -28V ID = -7.2A ns RG = 24 RD = 3.7, See Fig. 10 Between lead, nH 7.5 and center of die contact 350 VGS = 0V 170 pF VDS = -25V 92 = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
ISM

VSD trr Q rr ton Notes:

Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time

Min. Typ. Max. Units

Conditions D MOSFET symbol -12 showing the A G integral reverse -48 p-n junction diode. S -1.6 V TJ = 25C, IS = -7.2A, VGS = 0V 47 71 ns TJ = 25C, IF = -7.2A 84 130 nC di/dt = -100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Pulse width 300s; duty cycle 2%.

Uses IRF9Z24N data and test conditions RG = 25, IAS = -7.2A. (See Figure 12) ISD -7.2A, di/dt -280A/s, VDD V(BR)DSS, TJ 175C ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994.

Starting TJ = 25C, L = 3.7mH

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IRF9Z24NS/L
100
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V TO P

2 0 s P U LS E W ID TH Tc 25C T 5C J=2

100

-ID , D rain-to-S ou rc e C urre nt (A )

10

-ID , Drain-to-Source Current (A )

VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP

10

-4.5 V
1 0.1 1 10

-4 .5 V A
100

1 0.1 1

2 0 s P U LS E W ID TH TC 175C T 75 C J=1
10

100

-VD S , D rain-to-S ourc e V oltage (V )

-VD S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

100

2.0

R D S (on) , Drain-to-S ource O n Resistance (N orm alized)

I D = -12 A

-I D , D rain-to-S ource C urrent (A)

1.5

TJ = 25 C
10

TJ = 1 7 5 C

1.0

0.5

1 4 5 6 7

V DS = -2 5 V 2 0 s P U L S E W ID TH
8 9 10

0.0 -60 -40 -20 0 20 40 60 80

VG S = -1 0V

100 120 140 160 180

-VG S , Ga te -to-Source Volta ge (V)

T J , Junction T em perature (C )

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance Vs. Temperature

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IRF9Z24NS/L
700

-V G S , G ate-to-S ource V oltage (V )

600

V GS C is s C rs s C o ss

= = = =

0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd

20

I D = -7 .2 A V D S = -44 V V D S = -28 V

16

C , Capacitance (pF)

500

C iss C oss

400

12

300

200

C rss

100

0 1 10 100

0 0 5 10

FO R TE S T CIR C U IT S E E FIG U R E 1 3
15 20 25

V D S , D rain-to-S ourc e V oltage (V )

Q G , Total G ate C harge (nC )

Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage

100

100

-I S D , Reverse D rain Current (A )

O P E R A TIO N IN T H IS A R E A L IM IT E D B Y R D S (o n)
10 s

10

TJ = 15 0C

TJ = 2 5C

-I D , D rain C urrent (A )

10

100s

1m s

0.1 0.4 0.6 0.8 1.0 1.2 1.4

V G S = 0V
1.6

1 1

T C = 25 C T J = 17 5C S ing le P u lse
10

10m s 100

1.8

-VS D , S ourc e-to-D rain V oltage (V )

-VD S , D rain-to-S ourc e V oltage (V )

Fig 7. Typical Source-Drain Diode Forward Voltage

Fig 8. Maximum Safe Operating Area

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IRF9Z24NS/L
12

VDS VGS

RD

-ID , D rain C urrent (A m ps )

D.U.T.
+

RG

VDD

-10V
6 Pulse Width 1 s Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

3

td(on)

tr

t d(off)

tf

VGS
0 25 50 75 100 125 150

A
175

10%

TC , C as e Tem perature (C )
90%

Fig 9. Maximum Drain Current Vs. Case Temperature

VDS

Fig 10b. Switching Time Waveforms

10

Therm al R esp ons e (Z thJ C )

D = 0 .5 0 1 0 .2 0 0 .1 0 0 .0 5 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E R M A L R E S P O N S E )
N o tes : 1 . D u ty f ac to r D = t PD M

0.1

1 t2

/t

0.01 0.00001

2 . P e a k TJ = P D M x Z th J C + T C

A
1

0.0001

0.001

0.01

0.1

t 1 , R e c ta n g u la r P u lse D u ra tio n (s e c )

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRF9Z24NS/L
E A S , S ingle Pulse Avalanc he E nergy (m J)
VD S L 250

TOP
200

RG

D .U .T IA S D R IV E R
0 .0 1

VD D A

B O T TO M

ID -2 .9A -5 .1A -7.2 A

-2 0 V tp

150

100

15V

Fig 12a. Unclamped Inductive Test Circuit

50

0 25 50 75 100 125 150

A
175

IAS

S tarting T J , J unc tion T em perature (C )

Fig 12c. Maximum Avalanche Energy Vs. Drain Current

tp V (BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator Same Type as D.U.T.

50K

QG

12V

.2F

-10V
QGS VG QGD
VGS

.3F

D.U.T.

+VDS

-3mA

Charge

IG

ID

Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform

Fig 13b. Gate Charge Test Circuit

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IRF9Z24NS/L
Peak Diode Recovery dv/dt Test Circuit
D.U.T*

Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer

RG VGS dv/dt controlled by RG ISD controlled by Duty Factor "D" D.U.T. - Device Under Test

+ VDD

Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive P.W. Period D=

P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt

[VDD]

Re-Applied Voltage Inductor Curent

Body Diode

Forward Drop

Ripple 5%

[ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS

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IRF9Z24NS/L
D2Pak Package Outline

1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A2

4.69 (.1 85) 4.20 (.1 65)

-B 1.3 2 (.05 2) 1.2 2 (.04 8)

1 0.16 (.4 00 ) RE F.

6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 5 .28 (.20 8) 4 .78 (.18 8) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) 8.8 9 (.3 50 ) R E F.

1.7 8 (.07 0) 1.2 7 (.05 0)

3X

1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0)

0 .93 (.03 7 ) 3X 0 .69 (.02 7 ) 0 .25 (.01 0 ) M B A M

0.5 5 (.022 ) 0.4 6 (.018 )

M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )

NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.

LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E

8.89 (.3 50 ) 17 .78 (.70 0)

3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X

Part Marking Information

D2Pak

IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E

PART NUM BER F530S 9 24 6 9B 1M

DATE CODE (Y YW W ) YY = Y E A R W W = W EEK

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IRF9Z24NS/L
Package Outline
TO-262 Outline

Part Marking Information

TO-262

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IRF9Z24NS/L
Tape & Reel Information
D2Pak

TR R
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 )
1 .60 (.06 3) 1 .50 (.05 9) 0 .3 68 (.0 1 4 5 ) 0 .3 42 (.0 1 3 5 )

F E E D D IRE CTIO N 1 .8 5 (.0 7 3 )

1 .6 5 (.0 6 5 )

1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 )

1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 )

2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 )

TR L
10 .9 0 (.42 9) 10 .7 0 (.42 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 16 .10 (.63 4 ) 15 .90 (.62 6 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8)

F E E D D IRE C TIO N

13.50 (.532 ) 12.80 (.504 )

2 7.4 0 (1.079) 2 3.9 0 (.9 41)

4

33 0.00 (1 4.1 73) MA X.

60.00 (2.3 62) MIN .

NO TES : 1. C O M F O R M S TO E IA -4 18. 2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 3. D IM E N S IO N ME A S U R E D @ H U B . 4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .

26 .40 (1.03 9) 24 .40 (.961 ) 3

3 0.40 (1.1 97) MAX. 4

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 7/99

10

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