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May 2001
QFET
FQP27P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
TM
Features
-27A, -60V, RDS(on) = 0.07 @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating
S
!
G!
G DS
TO-220
FQP Series
!
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.5 -Max 1.25 -62.5 Units C/W C/W C/W
FQP27P06
Elerical Characteristics
Symbol Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -60 V, VGS = 0 V VDS = -48 V, TC = 150C VGS = -25 V, VDS = 0 V VGS = 25 V, VDS = 0 V -60 -------0.06 -------1 -10 -100 100 V V/C A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 A VGS = -10 V, ID = -13.5 A VDS = -30 V, ID = -13.5 A
(Note 4)
-2.0 ---
-0.055 12.4
-4.0 0.07 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---1100 510 120 1400 660 155 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -48 V, ID = -27 A, VGS = -10 V
(Note 4, 5)
--------
18 185 30 90 33 6.8 18
ns ns ns ns nC nC nC
------
---105 0.41
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -27A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
FQP27P06
Typical Characteristics
10
10
VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V Top :
10
10
175
10
25 -55
10
10
10
10
10
-1
10
0.24
10
0.20
10
10
175
0.04
Note : TJ = 25
25
10
-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature
3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd
12
2500
Crss = Cgd
10
Coss
2000
VDS = -30V
8
Capacitance [pF]
Ciss
1500
VDS = -48V
1000
Crss
500
2
Note : ID = -27 A
0 -1 10
0 10
0
10
10
15
20
25
30
35
FQP27P06
Typical Characteristics
(Continued)
1.2
2.5
2.0
1.1
1.5
1.0
1.0
0.9
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
30
Operation in This Area is Limited by R DS(on)
10
25
100 s 10 ms
10
DC
1 ms
20
15
10
10
10
-1
10
10
10
0 25
50
75
100
125
150
175
( t) , T h e r m a l R e s p o n s e
10
D = 0 .5
N o te s : 1 . Z J C ( t ) = 1 . 2 5 /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t )
0 .2 0 .1
10
-1
0 .0 5
PDM
0 .0 2 0 .0 1
JC
t1
s in g le p u ls e
t2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
FQP27P06
VGS
DUT
-3mA
Charge
VDS VGS RG
RL VDD
td(on)
t on tr td(off)
t off tf
VGS
10%
-10V
DUT VDS
90%
L VDS ID RG DUT
tp
VDD
-10V
FQP27P06
+ VDS DUT _
I SD L Driver RG
Compliment of DUT (N-Channel)
VDD
VGS
VGS ( Driver )
10V
I SD ( DUT )
IRM
di/dt IFM , Body Diode Forward Current
VDS ( DUT )
VSD
VDD
FQP27P06
Package Dimensions
TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) 3.60 0.10 (1.70) 4.50 0.20
1.30 0.05
+0.10
9.20 0.20
(1.46)
13.08 0.20
(1.00)
(3.00)
15.90 0.20
1.27 0.10
1.52 0.10
10.08 0.30
18.95MAX.
(3.70)
(45 )
0.50 0.05
+0.10
2.40 0.20
10.00 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOS EnSigna FACT FACT Quiet Series
DISCLAIMER
FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MICROWIRE OPTOLOGIC
OPTOPLANAR PACMAN POP PowerTrench QFET QS QT Optoelectronics Quiet Series SLIENT SWITCHER SMART START Stealth
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. H2