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Marking T3
SILICON EPITAXIAL PLANAR PNP TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS GENERAL PURPOSE LOW FREQUENCY APPLICATONS NPN COMPLEMENT IS BSS64
2 3 1
SOT-23
Unit V V V A A mW
o o
C C 1/4
BSS63
THERMAL DATA
R t hj-amb R th j-SR Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 620 500
o o
C/W C/W
V ( BR)CBO Collector-Base Breakdown Voltage (I E = 0) V ( BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage Emitter-Base Saturation Voltage DC Current G ain Transition F requency Collector Base Capacitance
I C = -10 mA
-100
I E = -10 A
-6
V V V
MHz pF
2/4
BSS63
DIM.
0044616/B
3/4
BSS63
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede s and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A .
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