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User's Manual
Quick Start
Visual inspection is needed to ensure that the evaluation board is received in good condition. All part references are designated with suffix a and b to indicate the lower and the upper inverter arms, respectively. If part references are made without suffixes, then they are valid for both upper and lower inverter arms (except R6, which is shared). Figure 1 shows the default connections of the evaluation board: 1. Q1 and Q2 are not mounted. Actual Power MOSFET can be mounted at either Q1 (for TO-220 package) or Q2 (for TO247 package) or connected to the driver board through short wire connections from the holes provided at Q1 or Q2. 2. D4 and R7 are not mounted (on solder side). A 12 V Zener diode footprint at D4 is provided to allow for a single DC power supply of 15 V ~25 V to be applied across VCC2 and VEE if needed. A virtual ground VE (at Source pin of Q1 or Q2) can then be generated and it acts as the reference point at the source pin of each power MOSFET. VCC2 will then stay at 12 V above the virtual ground VE. R7 is needed to generate the bias current across D4. 3. S2 and S3 jumpers are shorted by default to connect VE to VEE, assuming that a negative supply is not needed. Note: If a negative supply is needed, then S2 and S3 jumpers must be removed. 4. Bootstrap diode D3b and resistor R6 are connected by default. These two components are provided to help generate VCC2b supply through bootstrapping assuming that VCC2a supply is available. Note: Bootstrapping supply works only when Q1 or Q2 are mounted in a half-bridge configuration and turned on and off through proper PWM driving signals. 5. S1 is shorted by default to ground the IN- (or LED-, the cathode of LED) pin when VCC1 is supplied. This short can be removed if IN- cannot be grounded. 6. Upper and lower arms of the inverter will have common VCC1 (and GND1), a provision is made to allow VCC1 to be connected by solder between upper and lower inverter PCB portions (and GND1 on the solder side). 7. Provisions are also made to allow VCC2 (and VEE) to be generated from VCC1 through a DC/DC converter at IC2. When this DC/DC converter is used, S2, S3 (and R6) should be disconnected.
VCC1a and VCC1b (shorted) GNDa and GNDb on solder side (also shorted)
VCC1b VCC1a
S1 (shorted)
S2 (shorted)
R6 mounted (shorted)
Once inspection is done, the evaluation board can be powered up in five simple steps. Figure 2 shows you how to test the top or the bottom half-bridge inverter arms in simulation mode without the need for an actual power MOSFET.
Testing both arms of the half-bridge inverter driver (without a power MOSFET)
1. Solder a 10 nF capacitor across the gate and emitter terminals of Q1 or Q2. This is to simulate actual gate capacitance of a power MOSFET. 2. Connect a +5 V DC supply (DC supply 1) across the +5V and GND terminals of CON1. 3. Connect another DC supply (DC Supply 2 with voltage range from 12 V ~ 20 V) across VCC2 (pin 7 of IC2) and VEE (pin 5 of IC2) terminals of IC2a, respectively. This can be non-isolated for testing purposes. 4. Connect drive signals: a. A 10 kHz 5 V DC pulse (at slightly < 50% duty) from a dual-output signal generator across IN1+ and IN1- pins of CON1a to simulate microcontroller output to drive the lower arm of the half-bridge Inverter. b. Another 10 kHz 5V DC pulse (at 180 out of phase to the signal in 4a) from the dual-output signal generator across IN2+ and IN2- pins of CON1b to simulate microcontroller output to drive the upper arm of the half-bridge inverter. 5. Use a multi-channel digital oscilloscope to capture the waveforms at the following points: a. LED signal at the IN1+ pin with reference to (w.r.t.) GND. b. LED signal at the IN2+ pin w.r.t. GND.
Note: The VCC2b supply of voltage close to V CC2a should then be successfully generated through the built-in bootstrap components D3b and R6.
c. VGa representing the output voltage of ACPL-P346/W346 (IC1a) at the gate pin of Q1a (or Q2a) w.r.t. VEa. d. VGb (through an isolated probe) representing the output voltage of ACPL-P346/W346 (IC1b) at the gate pin of Q1b (or Q2b) w.r.t. VEB.
In2In2+ 4b 5b Signal Input
1 VEb
4a 5a
Signal Input
In1In1+
1 VEa
Gnd +5V
DC Supply 1
Schematics
Figure 3 shows the schematics of the evaluation board:
CON1b
LEDb+ R1b 249R 1
IC1b ACPL-P346
VCC2b 6 C1b 0.1F D4b R7b NM TP1b R4b 4R7 1W NM D G SS32 SMBJ11CA D1b S2b D2b
NM R3b
TO220/TO247 S Q1b/Q2b
NM
LEDb-
VEb
IC2b
7 TP2b
GNDb
NM
6 TP3b 5 TP4b
R6
CON1a
LEDa+
R1a 249R
IC1a ACPL-P346
NM R3a
TP1a R5a NM
R4a 4R7 1W
NM
LEDa-
4 VEEa
S2a
VCC1a GNDa
1 2
IC2a
BYM26F
D3a
R05P212D/R8
Practical connections of the evaluation board using a power MOSFET for an actual inverter test
1. Solder actual power MOSFETs at Q1 (or Q2) for the top and bottom arms of the half-bridge inverter isolated drivers. 2. Connect a +5V DC isolated supply1 across +5V and GND terminals of CON1 for both arms of the isolated drivers. 3. Connect another isolated DC supply2 (voltage range from 12 V ~ 20 V) across VCC2a and VEEa at pin 7 and pin 5 of IC2a respectively for the bottom arm. 4. Connect the signal output (meant to drive the bottom arm of the half-bridge inverter) from the microcontroller to Signal Input 1 across pin IN1+ and IN1- of CON1a of the bottom inverter arm isolated driver. 5. Connect the signal output (meant to drive the top arm of the half-bridge inverter) from the microcontroller to Signal Input 2 across pin IN2+ and IN2- of CON1b of the top inverter arm isolated driver. Note: Signal Input 2 should be 180 out of phase w.r.t. Signal Input 1. Check that VCC2b (voltage close to VCC2a) is generated through the bootstrap components D3b and R6. 6. Use a multi-channel digital oscilloscope to capture the waveforms at the following points: a. LED signal at IN1+ pin w.r.t. GND for the bottom arm. b. LED signal at IN2+ pin w.r.t. GND for the top arm. c. Vga for the gate driving voltage of Q1a (or Q2a) w.r.t. VEa of the bottom inverter arm (differential probe needed). d. Vgb for the gate driving voltage of Q1b (or Q2b) w.r.t. VEb of the top inverter arm (differential probe needed). 7. Connect a power cable from the output pin (marked Load) to the inverter load. 8. Connect the high voltage cables from the top arm power MOSFET drain pin to HVDC+ and from the bottom arm power MOSFET source pin to HVDC-, respectively, as shown. (Note: It is recommended that you enable the currentlimiting function of the HV power source supplying the high voltage DC bus voltage during this test to protect the inverter and its driver circuitries).
8 HVDC+ 6d 5 IN2+ 6b Signal Input 2 IN21 Power MOSFET mounted
Microcontroller
12~20V
+
6c 1 Power MOSFET mounted 3
7 Load
2 GND +5V
12~20 V DC Supply2
HVDC 8
Vcc2a
+12V~20V External +12V~20V External
Veea
0V
S2a
s/c
S3a
s/c
D4a/ R7a
NM
Vcc2b
Bootstrapped from Vcc2a (+12V~20V) +12V~20V External
Veeb
0V
S2b
s/c
S3b
s/c
0V
s/c
s/c
NM
0V
s/c
s/c
NM
+15V~24V External
12V -3V~-12V 0V
open open
12V/ 1k
+15V~24V External
12V -3V~-12V 0V
open open 12V/1k Vee available - Three external supplies needed for Vcc1, Vcc2a and Vcc2b - Virtual gnds Vea and Veb generated through D4 and R7 s/c s/c NM Cheap - One single output DC/DC converter for Vcc2a - Only one external supply is needed (Vcc1) Higher Power - Two single output DC/DC converters for Vcc2a and Vcc2b - Only one external supply is needed (Vcc1) Vee available - Two dual output DC/DC converters for Vcc2a,Vcc2b, Veea and Veeb - Only one external supply is needed (Vcc1)
s/c
s/c
NM
0V
s/c
s/c
NM
DC/DC (=Vcc1/+12V)
0V
s/c
s/c
NM
+5 V External
s/c
NM
DC/DC (=Vcc1/12V)
+12V -12V
open
s/c
NM
+5 V External
DC/DC (=Vcc1/9V)
open open
12V/ 1k
DC/DC (=Vcc1/9V)
+12V
-6V
+12V
-6V
open open 12V/1k Vee available - Dual output DC/DC converters for Vcc2a and Vcc2b - only 1 external supply is needed (Vcc1) - Virtual gnds Vea and Veb generated through D4 and R7
Note: As TVS D2 voltage is selected at a breakdown voltage of 12.2 V, it is not advised to set both Vcc2 and Vee voltage at a voltage beyond 12 V. To use a voltage higher than 12 V, please replace D2 with a bigger clamping voltage.
Output Measurement
A sample of input LED and various output waveforms are captured and shown in Figure 6. The default setup connection is adopted, except with Q1a and Q1b power MOSFETs are mounted. The power MOSFETs used have a gate capacitance equivalent to 10 nF.
Figure 6. Input LED signal and Power MOSFET Gate Voltage Waveforms
Figure 6 also shows that, once a bootstrap supply is adopted, the amplitude of the output voltage at the top inverter arm will be slightly smaller than that of the bottom inverter arm, at 180 out of phase. (IN1+ is set at 49% duty ratio, while IN2+ (not shown) is also set with 49% duty ratio, plus a turn-on delay of 100 ns with respect to IN1+). Figure 7 shows the turn-off signal of IN1+, the turn-off signal at gate of Q1a, and the turn-on signal at gate of Q1b.
Figure 8 shows the turn-on signal of IN1+, the turn-on signal at gate of Q1a and the turn-off signal at gate of Q1b.
As can be seen from Figure 7 and Figure 8, the turn-off speed of the power MOSFET will be slow, due to the capacitive effects of D2 and the gate capacitance of Q1. To improve the turn-off speed, the board is provided with a diode resistor pair footprints at D1 and R5 (not mounted NM) to increase the gate current during turn-off. Another way to further improve the turn-on and turn-off speed is by reducing the gate resistance of R4, but make sure the gate drive current is not more than 2.5 A.
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Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries. Data subject to change. Copyright 2005-2013 Avago Technologies. All rights reserved. AV02-4051EN - May 2, 2013