FCP11N60/FCPF11N60

SuperFET
FCP11N60/FCPF11N60
General Description
SuperFETTM is a new generation of high voltage MOSFETs from Fairchild with outstanding low on-resistance and low gate charge performance, a result of proprietary technology utilizing advanced charge balance mechanisms. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.

TM

Features
650V @Tj = 150C Typ. Rds(on)=0.32 Ultra low gate charge (typ. Qg=40nC) Low effective output capacitance (typ. Coss.eff=95pF) 100% avalanche tested

D
!

G! G DS

TO-220
FCP Series

GD S

TO-220F
FCPF Series
!

Absolute Maximum Ratings

Symbol ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current

TC = 25C unless otherwise noted

Parameter - Continuous (TC = 25C) - Continuous (TC = 100C) - Pulsed

(Note 1)

FCP11N60 11 7 33

FCPF11N60 11* 7* 33* 30 340 11 12.5 4.5

Units A A A V mJ A mJ V/ns W W/C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
(Note 2) (Note 1) (Note 1) (Note 3)

- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

125 1.0

36 0.29 -55 to +150 300

* Drain current limited by maximum junction termperature

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient FCP11N60 1.0 0.5 62.5 FCPF11N60 3.5 -62.5 Units C/W C/W C/W

2004 Fairchild Semiconductor Corporation

Rev. B, March 2004

FCP11N60/FCPF11N60

Electrical Characteristics
Symbol Parameter

TC = 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS BVDSS / TJ BVDS IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Avalanche Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A, TJ = 25C VGS = 0 V, ID = 250 A, TJ = 150C ID = 250 A, Referenced to 25C VGS = 0 V, ID = 11 A VDS = 600 V, VGS = 0 V VDS = 480 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 600 --------650 0.6 700 --------1 10 100 -100 V V V/C V A A nA nA

On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 5.5 A VDS = 40 V, ID = 5.5 A
(Note 4)

3.0 ---

-0.32 9.7

5.0 0.38 --

V S

Dynamic Characteristics
Ciss Coss Crss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz VDS = 0V to 480 V, VGS = 0 V VDS = 25 V, VGS = 0 V, f = 1.0 MHz -----1148 671 63 35 95 1490 870 82 --pF pF pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 480 V, ID = 11 A, VGS = 10 V
(Note 4, 5)

VDD = 300 V, ID = 11 A, RG = 25
(Note 4, 5)

--------

34 98 119 56 40 7.2 21

80 205 250 120 52 ---

ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 11 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 11 A, dIF / dt = 100 A/s
(Note 4)

------

---390 5.7

11 33 1.4 ---

A A V ns C

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS = 5.5A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 11A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

2004 Fairchild Semiconductor Corporation

Rev. B, March 2004

FCP11N60/FCPF11N60

Typical Characteristics

10

ID , Drain Current [A]

10

ID, Drain Current [A]

VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :

10

150 C

10

10

25 C

-55 C

10

-1

* Notes : 1. 250 s Pulse Test o 2. TC = 25 C

* Note 1. VDS = 40V 2. 250 s Pulse Test

10

-1

10

10

10

-1

10

VDS, Drain-Source Voltage [V]

VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

1.0

0.8

IDR , Reverse Drain Current [A]

RDS(ON) [ ], Drain-Source On-Resistance

VGS = 10V
0.6

10

0.4

VGS = 20V

10

150 C

25 C
* Notes : 1. VGS = 0V 2. 250 s Pulse Test

0.2
* Note : TJ = 25 C
o

0.0 0 5 10 15 20 25 30 35 40

10

-1

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

ID, Drain Current [A]

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

6000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd

12

VDS = 100V
10

5000

VDS = 250V VDS = 400V

VGS , Gate-Source Voltage [V]

4000

Capacitance [pF]

Coss
3000
* Notes : 1. VGS = 0 V 2. f = 1 MHz

2000

Ciss

1000

Crss

2
* Note : ID = 11A

0 -1 10

0
10
0

10

10

15

20

25

30

35

40

45

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2004 Fairchild Semiconductor Corporation

Rev. B, March 2004

FCP11N60/FCPF11N60

Typical Characteristics

(Continued)

1.2

3.0

2.5

BV DSS , (Normalized) Drain-Source Breakdown Voltage

1.1

RDS(ON) , (Normalized) Drain-Source On-Resistance

2.0

1.0

1.5

1.0
* Notes : 1. VGS = 10 V 2. ID = 5.5 A

0.9

* Notes : 1. VGS = 0 V 2. ID = 250 A

0.5

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On-Resistance Variation vs. Temperature

10

Operation in This Area is Limited by R DS(on)

10

Operation in This Area is Limited by R DS(on)

10

100 us

10

100 us 1 ms 10 ms

10 ms
10
0

DC

ID, Drain Current [A]

ID, Drain Current [A]

1 ms

10

100 ms DC
* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o

10

-1

* Notes : o 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse

o

10

-1

10

-2

10

10

10

10

10

-2

10

10

10

10

VDS, Drain-Source Voltage [V]

VDS, Drain-Source Voltage [V]

Figure 9-1. Maximum Safe Operating Area for FCP11N60

Figure 9-2. Maximum Safe Operating Area for FCPF11N60

12.5

10.0

ID, Drain Current [A]

7.5

5.0

2.5

0.0 25

50

75

100
o

125

150

TC, Case Temperature [ C]

Figure 10. Maximum Drain Current vs. Case Temperature

2004 Fairchild Semiconductor Corporation Rev. B, March 2004

FCP11N60/FCPF11N60

Typical Characteristics

(Continued)

10

Z (t), T h e rm a l R e s p o n s e

D = 0 .5

0 .2
10
-1

0 .1 0 .0 5 0 .0 2 0 .0 1 s in g le p u ls e

* N o te s : o 1 . Z J C ( t) = 1 .0 C /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)

PDM t1 t2

J C

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-1. Transient Thermal Response Curve for FCP11N60

Z (t), T h e rm a l R e s p o n s e

D = 0 .5
10
0

0 .2 0 .1 0 .0 5
10
-1

0 .0 2 0 .0 1

* N o te s : o 1 . Z J C ( t) = 3 .5 C /W M a x . 2 . D u ty F a c to r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C ( t)

PDM t1
s in g le p u ls e

J C

t2

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]

Figure 11-2. Transient Thermal Response Curve for FCPF11N60

2004 Fairchild Semiconductor Corporation

Rev. B, March 2004

FCP11N60/FCPF11N60

Gate Charge Test Circuit & Waveform

50K 12V 200nF 300nF

Same Type as DUT VDS

VGS Qg 10V Qgs Qgd

VGS

DUT
3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS VGS RG

RL VDD

VDS

90%

10V

DUT

VGS

10%

td(on) t on

tr

td(off) t off

tf

Unclamped Inductive Switching Test Circuit & Waveforms

L VDS ID RG DUT
tp

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp

ID (t) VDS (t) Time

10V

2004 Fairchild Semiconductor Corporation

Rev. B, March 2004

FCP11N60/FCPF11N60

Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

+ VDS _

I SD L Driver RG
Same Type as DUT

VDD

VGS

dv/dt controlled by RG ISD controlled by pulse period

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

IFM , Body Diode Forward Current

I SD ( DUT ) IRM

di/dt

Body Diode Reverse Current

VDS ( DUT )

Body Diode Recovery dv/dt

VSD

VDD

Body Diode Forward Voltage Drop

2004 Fairchild Semiconductor Corporation

Rev. B, March 2004

FCP11N60/FCPF11N60

Package Dimensions

TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) 3.60 0.10 (1.70) 4.50 0.20

1.30 0.05

+0.10

9.20 0.20

(1.46)

13.08 0.20

(1.00)

(3.00)

15.90 0.20

1.27 0.10

1.52 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

10.08 0.30

18.95MAX.

(3.70)

(45 )
0.50 0.05
+0.10

2.40 0.20

10.00 0.20

Dimensions in Millimeters
2004 Fairchild Semiconductor Corporation Rev. B, March 2004

FCP11N60/FCPF11N60

Package Dimensions

TO-220F
3.30 0.10 10.16 0.20 (7.00) 3.18 0.10 2.54 0.20 (0.70)

6.68 0.20

15.80 0.20

(1.00x45)

MAX1.47 9.75 0.30 0.80 0.10

(3 ) 0

0.35 0.10 2.54TYP [2.54 0.20]

#1 0.50 0.05 2.54TYP [2.54 0.20] 4.70 0.20

+0.10

2.76 0.20

9.40 0.20

Dimensions in Millimeters
2004 Fairchild Semiconductor Corporation Rev. B, March 2004

15.87 0.20

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Preliminary

First Production

No Identification Needed

Full Production

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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. I8