GROWTH AND CHARACTERIZATION

OF BaZrO3 THIN FILMS FOR

MICROWAVE COMMUNICATION
APPLICATIONS

V. RAJASEKARAKUMAR

MATERIALS RESEARCH CENTER

INDIAN INSTITUTE OF SCIENCE
BANGALORE- 560012
INDIA
Plan of the presentation

Objectives

Applications

Processing Technique

Structural Properties

SIMS Analysis

AC Electrical Properties

DC Electrical Properties

Future work plan
 Objectives

To identify a new material for microwave
communication application

To study the dielectric properties of paraelectric thin films
and identify the extrinsic loss mechanisms that degrade the material
Properties.
Processing (PLD)  Thin film structure

Microwave dielectric properties
Applications

Components used in microwave communications

Dielectric resonators Phase shifters
Phased array antennas Band pass filters
Transmission lines Coplanar wave guides

Material requirement for microwave dielectrics
1) High dielectric constant, εr
2) Low loss tangent/ high quality factor
Q= (tanδ) -1 Q> 10,000
3) Very low temperature coeff. Of resonance
TCω= -( 1/2 TC ε + αL ) ~ few ppm/ K
High εr →Miniaturization
Low loss and Stability (f, TC) → Improved performance
 Importance of BaZrO3
High dielectric constant
Paraelectric material
Low tanδ values
High tunability
PHYSICAL PROPERTIES OF BaZrO3
Crystalline Structure Cubic

Lattice Constant (R.T), a 4.192 Å

Color white

Average Grain Size ~ 1 to 20 µm

Theoretical Density 6.242 g/ cc

Typical Density 5.35-5.95 g/cc

Melting Point ~ 2600 °C

Dielectric Constant, R.T ~110

 Pulsed laser deposition system assembly

Stepper motor
drive

Quartz
vacuum port
UV Grade lens
KrF
Excimer
Laser

27kV
10Hz

248 nm
600mJ
Thermocouple Rotating target
connected to
temperature
controller

Substrate holder and

heater assembly

Deposition Chamber
STRUCTURAL PROPERTIES
 Structure and Stoichiometry
Effect of substrate temperature in the
crystallinity

BZ Films were grown at different substrate
*
temperature at a constant partial pressure of 50
(110)

(211)
(111)

(220)
(200)
* PtK β mTorr.

The perovskite phase evolves at 5500C and at
Intensity (arb. unit)

PtKα

* 0
650 C 6000C the enhancement of (110), (111) and (211)
planes are observed.
* 0

All the single phase BZ thin films exhibited
600 C
polycrystalline nature for the thin films deposited
*
0
550 C upto 6000C.

Further increment of substrate temperature to
6500C, there is a tendency for the orientation along
pow (110) direction with the disappearance of other
20 30 40 50 60
prominent perovskite peaks.
2θ
This is accordance with the Thorton’s model
which suggests that at higher substrate temperatures
the thin films tend to exhibit columnar structure and
higher orientation along a favourable plane.
 Effect of ex-situ annealing
The BZ thin films deposited at the
temperature in crystallinity substrate temperature of 4000C in the
pressure of 20 mTorr and
90 min_ 20 mTorr subsequently annealed at different

(200)
(110)

PtKβ

(211)
temperatures for 90 minutes.

(220)
PtKβ
PtKα
Intensity(arb.unit)

0
800 C

The perovskite peak enhanced with
increasing of temperatures upto
0
775 C
7750C.

Effect of deposition pressure

0
750 C
in crystallinity
20 30 40 50 60
0

PtKα
775 C_60 min
2θ

(110)

(200)
PtKβ

(211)
Intensity (arb.unit)
100 mTorr

The BZ thin films deposited at

the substrate temperature of 4000C 50 mTorr
with various oxygen partial
pressure and ex-situ annealed at
20 mTorr
7750C for 60 min.
20 30 40 50 60

2θ
 Effect of annealing time in crystallinity

(110)

(200)
PtKβ

(211)

(220)
PtKα
Intensity (arb.unit)

90min

75min

60min

45min.

30 min
20 30 40 50 60

2θ

The BZ thin films deposited at
the substrate temperature of 4000C
with the oxygen partial pressure of
50 mTorr and ex-situ annealed at
7750C for various time period.
 Stress Analysis
Stress Vs Annealing temperature Stress Vs Deposition Pressure

-30
Stress = -Ed0/(2ν(d-d0))
90min._20 mTorr -50
0
-35 -51 775 C_60min.

-40 E = modulus of -52

Stress(GPa)

-53

Stress (GPa)
-45 elasticity -54
-50 ν= Poisson’s ratio -55
-55 -56
d0 = Actual d- value -57
-60
(JCPDS) -58
750 760 770 780 790 800 20 40 60 80 100
Temperature( C)
0 d = XRD d- value Pressure (m torr)

Stress Vs Annealing time

-40
0
775 C_50mTorr
-45

-50
Stress (Gpa)

-55

-60

-65
Ref:
30 40 50 60 70 80 90
P. Patasalas, J. Appl.Phys.
Annealing Time (min) 86, 5296 (1999).
 Surface Morphology of BZ thin films deposited at different
Substrate temperatures.

Substrate temperature:5500C

The surface
morphology of the BZ
thin films deposited at
different substrate
temperatures showed a
dense grain structure.
Substrate temperature:6000C

Cross sectional View of the BZ thin film

The cross sectional view of

the BZ thin film showed
multigrain structure.
 In-situ grown BZ thin film

Cross sectional view Surface morphology

Ex- situ grown BZ thin film

Cross sectional view Surface morphology

Secondary Ion Mass Spectrometry
Analysis
(SIMS)
Principle
Secondary Ion Mass spectrometry (SIMS) works under the principle
of mass spectrometry.
Capabilities:
 Depth resolution of 20- 50 oA with sputter rates down to
1 oA/ sec.
 Profiling to a depth of 8µm.
 Excellent detection sensitivity with wide dynamic range.
 Complete coverage of the periodic table.
 Quantification with appropriate standards
 Ability to perform imaging to determine the spatial distribution
of species or map devices on 2- 5µm scale.
 Mass spectra acquisition upto 500 amu.
 Isotopic measurements
 As- measured signal intensity Vs The crater depth for the BZ thin film
elapsed errosion time which was measured using
of a BZ thin film the Sloan 3030 surface profilometer
5
10 2 -> 16O
4 -> 195Pt
1 3 -> 90Zr
1 -> 138Ba
4
10

3 2
10
3
[C/S]

2
10 4

1
10

0
10
0 500 1000 1500 2000 2500

Sput.Time:[S]

Thickness= (Depth/ Total Sputt. Time) x

Erosion time
Depth: 7976 A0
 Depth profile of in-situ annealed
BZ thin film using SIMS.
5
10

2
1 -> 138Ba
2 -> 16O
The interface is sharp and almost no
3 -> 90Zr
1
* 4 -> 195Pt diffusion of Ba and Zr in to platinum
4
10
layer when compared to the thickness
* of the platinum layer.
2
3
10 *
The peaks (*) observed in all elements
3 (Ba, Zr, O) reveals that there is a fixed
[C/s]

2
10 4
proportion of the constituent species of
4
the expected phase. So the film growth
3
at the interface is good. Moreover, the
1
10
1
stoichiometry and sputtering rate are
Tp different at the interface which has lead
0
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
to humps in the region.
Thickness (µm)
Oxygen concentration increases after
platinum layer because we have an
Type of deposition : In-situ
inter-face of (Pt/ TiO2/ SiO2/ Si) in our
Oxygen partial pressure: 50 mTorr substrate.
Annealing temperature : 650 0 C
Tp shows the thickness of the
platinum layer (0.18 µm).
 Depth profile of Ex-situ annealed
BZ thin film using SIMS.
5
10
1 -> 138Ba
2 -> 16O
# 3 -> 90Zr
The interface is not sharp and all the
4 -> 195Pt
1
2 elements are interdiffused.
4
10
*
In the (*) region both Zr and Oxygen
4

3
2 have a uniform rise, whereas Ba falls
10
down suddenly ( Zirconium oxide have
3 * formed or segregated).
[C/s]

2
10 4
Hump in the * region due to
interface effects.
1
1
10

Flat nature was observed in the
region (//). It has given the conclusion
0
of compound formation (ZrO2) at the
10
0.0 0.2 0.4 0.6 0.8 1.0 interface, a flat nature reveals that we
Thickness (µm)
have constituents species of definite
Deposition pressure : 50 mTorr proportion.

In # area there is a hump in oxygen,
Substrate temperature : 400 0 C
that due to TiO2 interface.
Annealing time : 90 min.
The diffusion length is around 0.16
Annealing temperature: 600 0 C µm.
 Effect of substrate temperature
5
10
1 -> 138Ba
1 -> 138Ba
1
* 2 -> 16O
2 2 -> 16O
3 -> 90Zr
4
10
3 -> 90Zr
4 -> 195Pt
4
10
1
* 4 -> 195Pt

** 2 *
3
10
2 3
10 *
3
[C/s]

[C/s]
3
2
10 4
4
2
10 4
1 3
10
1

1
Tp
10 0
0.0 0.2 0.4 0.6 0.8 10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Thickness (µm)
Thickness (µm)

Type of deposition : In-situ Type of deposition : In-situ

Oxygen partial pressure: 50 mTorr Oxygen partial pressure: 50 mTorr
Annealing temperature : 550 0 C Annealing temperature : 650 0 C
 Effect of ex-situ annealing temperature
5
10
1 -> 138Ba
2 -> 16O  In the (*) region both Zr and
# 3 -> 90Zr
4 -> 195Pt oxygen have a uniform rise,
1
2
4
10
* whereas Ba falls down suddenly (
4 Zirconium oxide have formed or
2
3
10
segregated).
3 *  Hump in the * region due to
[C/s]

2
interface effects.
10 4
 Flat nature was observed in
1
the region “ //”, it has given the
1
10 conclusion of compound
formation (ZrO2) at the interface.
0
10  The flat nature reveals that we
0.0 0.2 0.4 0.6 0.8 1.0

Thickness (µm)
have constituents species of
definite proportion.
Deposition pressure : 50 mTorr  In # area there is a hump in
Substrate temperature : 400 0 C oxygen, that due to TiO2
Annealing time : 90 min. interface.
Annealing temperature : 600 0 C  The diffusion length: 0.161µm
 Deposition Pressure : 50 mTorr Deposition pressure : 50 mTorr
Substrate temperature : 400 0 C Substrate temperature : 400 0 C
Annealing time : 90 min. Annealing time : 90 min.
Annealing temperature : 650 0 C Annealing temperature : 775 0 C
5 5
10 10
1 -> 138Ba 1-> 138Ba
2 -> 16O 2-> 16O
3 -> 90Zr 3-> 90Zr
1 4 -> 195Pt 4-> 193Pt
2
4
10
4
10 1

2 3 2
3
10 10
4

[C/s]
3
[C/s]

3
2
2
10 10
4 4

1
1
1 10
10

0
0 10
10
0.0 0.5 1.0 1.5
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Thickness (µm)
Thickness (µm )

Diffusion length: 0.190 µm Diffusion length: 0.386 µm

The formation of ZrO2 has decreased with increase of annealing temperature.

The interdiffusion has been take place and the diffusion length has increased
with increasing annealing temperature.
 Conclusion:
 In the (*) region both Zr and oxygen have a uniform rise, whereas Ba falls down
suddenly ( Zirconium oxide have formed or segregated).
 Hump in the * region due to interface effects.
 Flat nature was observed in the region “ //”, it has given the conclusion of
compound formation (ZrO2) at the interface.
 The flat nature reveals that we have constituents species of definite proportion.
 In # area there is a hump in oxygen, that due to TiO2 interface.
 The formation of ZrO2 has decreased with increase of annealing temperature.
 The interdiffusion has been take place and the diffusion length has increased
with increasing annealing temperature.
The flat nature has reduced with increasing annealing temperature, which may be
due to dissociation and redistribution of zirconium oxide
 The oxygen content increases at the interface of the film which has annealed at
775 0 C. It’s due to the high temperature annealing and the dissociation and
redistribution of zirconium oxide
 The flatness observed has almost disappeared in the case of annealing
temperature 775 0 C, which due to the redistribution of ZrO2 at higher temperatures.
 Effect of Oxygen Pressure
5 5
10 10
1 -> 138Ba 1 -> 138Ba
2 -> 16O 2 2 -> 16O
2
3 -> 90Zr 3 -> 90Zr
4 -> 195Pt 4 -> 195Pt
4
10 1 * 4
10 1

4
2
4
*
*
3
3 10
10 2
1 *
*

[C/s]
3
[C/s]

3 3
2
2 10
10
4 4
1
1
1 10
10

0
0
10
10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.0 0.2 0.4 0.6 0.8
Thickness(µm)
thickness( µm)

Substrate temperature : 400 0 C Substrate temperature : 400 0 C

Annealing temperature: 775 0 C Annealing temperature : 775 0 C
Annealing time : 90 min. Annealing time : 90 min.
Deposition pressure : 20 mTorr Deposition pressure : 50 mTorr
 5
10
Conclusion:
2
1 -> 138Ba
2 -> 16O At the end of the interface, that
1 3 -> 90Zr
4
10 4 -> 195Pt is almost the end of platinum
4
depth (marked as *), there is a
2
3
10 rise in all the element which is
3
almost in a fixed proportion. But
[C/s]

2
10
4 really Ti, Zr, Pt are hiked in this
1
right interface zone and the
1
10
counts are not due to Ba species.
It’s due to the mass interference.
0
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 The sum of masses of Ti and Zr
Thickness (µm)
will equal that of Ba.
 The profiles doesn’t show any
Substrate temperature : 400 0 C significant variation as a function
Annealing temperature : 775 0 C of oxygen pressure other than the
Annealing time : 90 min. increase of oxygen content at the
interface.
Deposition pressure : 100 mTorr
 Summary
 SIMS analysis has given a complete information regarding the interface studies to a
high resolution of almost 1nm.
In-situ annealed films have a very sharp interface and diffusion of platinum electrode
into the film is not found
 Ex-situ annealed films have the interdiffusion of both the film and the platinum.
 In the ex-situ annealed films the segregation of ZrO2 has been found and which has
also dislocated on higher annealing temperatures.
 The platinum diffusion into the film has caused an increase of leakage current
 The diffusion curve which follows a Gaussian nature is not a perfect Gaussian in the
case of interdiffusion of BZ thin films.
 The diffusion length of the platinum into the film is found to be higher on higher
annealing temperatures as expected
 Due to the presence of oxide interfaces ( Pt/ TiO2/ SiO2/ Si) in the substrate the
diffusion of the constituent atoms (Ba, Zr, O) present in the film is not well enhanced
even on higher annealing temperatures.
AC Electrical Properties
 Dielectric Response
Real part of dielectric constant as a Real part of dielectric constant as a
function of frequency at various temp. function of temp. at various frequency.
90
80 T= 125 80 0.1K
T= 175 1K
70 10K
T= 200 70 100K
60 T= 225
T= 250
T= 275 60
50
T= 300
50

ε'
40
ε'

40
30
30

20
20
0 50 100 150 200 250 300
2 3 4 5
10 10 10 10 0
Temp( C)
Frequency(Hz)

Dispersion at low frequency
The frequency dispersion ← low

Reduction of ε´ with ↑ frequency frequency space charge accumulation

Slope = 0.24 in the range of 100-10kHz.
Dispersion ↑ with ↑ of temp.&

Slope ↑ with ↑ of temperature extended- hopping of e-charges.
Imaginary part of dielectric constant as a Dielectric constant and tan δ dispersion
function of frequency at various temp. With frequency at room temperature
100 10
-1

tanδ
T= 125
100 T= 150
T = 175
T= 200 75
T= 225
T= 250

tanδ
T= 275
10 T= 300

ε'
50
ε''

25
-2
10
2 3 4 5
0.1 10 10 10 10
2 3 4 5
10 10 10 10
frequency (Hz)
Frequency(Hz)

At 100 kHz frequency in room ⇒ Dielectric constant ⇒ 24.4

Temperature Loss factor ⇒0.03

Absence of any noticeable

dispersion in ε` & tanδ
δ
↔ Good quality BZ thin films.

Slopes of ε`& ε″ ruled out Pure Debye or Maxwell- Wagner

 Universal frequency response
(Jonscher’s model)
ε* = ε`- iε″
ε″ = ε∝+σ
σ/iεε0ω + a(T) (iω
ωn(T)-1)/ ε0
ε` = ε∝+ sin(n(T)Π Π/2) ωn(T)-1 a(T)/ ε0
ε″ = σ/εε0ω + cos(n(T) Π/2) ωn(T)-1 a(T)/ ε0

0.9
Experimental Experimental
Linear fit Linear fit
0.8
1E-6

0.7
n(T)

a(T)
0.6 1E-7

0.5

0.4 1E-8
0 50 100 150 200 0 50 100 150 200 250
0 0
T ( C) T ( C)

↑ a(T) with temp ⇒ ↑ contribution of charge carrier term in ε″

 Impedance Analysis
Imaginary part of the impedance Imaginary part of the modulus
Vs frequency Vs frequency
7
2.0x10 -5
1.5x10
0
T= 125 C
T= 125 0
T= 150 C
T= 150 0
T= 175 C
0
7 T= 175 T= 200 C
1.5x10 T= 200
0
T= 225 C

M* = ωC0Z*
-5 0
T=
T=
T=
225
250
275
jω 1.0x10 T= 250 C
0
T= 275 C
0
T= 300 C

1.0x10
7 T= 300
ε* = (M*)-1
Z (Ω)

M''
-6

Y* = (Z*)-1
5.0x10
''

6
5.0x10

ωC0σ*
Y* = jω
0.0
0.0

2 3 4 5
2 3 4 5 10 10 10 10
10 10 10 10
Frequency (Hz)
Frequency (Hz)

Non-coincidence of peak frequency
Peak found to shift with increase of

of Z″ and M″ ⇒ Non Debye type temperature towards high frequency
relaxation phenomenon. ⇒ Single RC combination

This type of asymmetric behavior in real materials largely

determined by the Johnscher’s power law
 AC conductivity
Ac conductivity plot as a function of
frequency for different sample
temperatures

T= 100

The plot at low temperature
T=150
T= 175 respond to the power law.
T= 200
10
-7
T= 225
T= 250

The power law dependency
T= 275
T= 300 corresponds to the short range
hopping of charge carriers through
10
-8
trap sites separated by energy
-1
σ ac (Ω.cm)

barriers of varied heights.

The plot for the different
10
-9 temperature at high frequency
region converges with one another,
since the electronic conduction
10
-10 which is dominant in that region is
2 3 4 5
10 10 10 10

Frequency(Hz)
independent of frequency.
 Arrhenius plot of ac conductivity Vs
(1000/T) in BZ thin film.

The plot contain two different regions corresponds

to two different activation energies.

At lower temperature the obtained σac is independent
-7 of temperature upto 1270C. It’s probably due to the
10
saturation in the number of liberated electrons from the
donor states.

Beyond 1270C, the shape of the curve becomes more
LnσT(ω) (S.cm-1)

10kHz
-8
steeper and linear with the calculated activation energy
10 of 1.3 eV. This might be attributed either to the oxygen
1kHz
vacancy motion or due to the deep trap space charge
conduction mechanism.

The activation energy was considerably lower than
-9
10 0.1kHz the band gap energy, which implies that the conduction
in this range of temperatures were dominated by the
1.5 2.0 2.5 3.0 3.5 charge carriers other than electrons, possibly by ionic
-1
1000/T (K ) charge carriers such as oxygen vacancies.

The non linear shape of the Arrhenius plot indicated
that, at different temperatures different mechanisms
involved in the ac conduction process.
DC Electrical Properties
 DC Leakage Current Characteristics

0.1
T= 30
T= 60
T= 75
T= 100
1E-4 T= 125

(Current(amp))
T= 150
T= 175
T= 200

1E-7

1E-10

1E-13
VTFL
0.1 1 10

(voltage(V))

VTFL → voltage at which the traps

get filled
 Schottky verification
2 0
10 T= 125 C 1E-5
T=
0
150 C 1.5 V-> 2.07 eV
0
T= 175 C 2.0 V-> 2.27 eV
0
T= 200 C 3.0 V-> 2.33 eV

ln (J/T ) (A/Cm K )
2
4.0 V-> 2.36 eV

2
-2
10 1E-6 5.0 V-> 2.43 eV
lnJ (A/cm )
2

2
-6
10 1E-7

-10
10 2 2 2 2
1E-8
0.0 2.0x10 4.0x10 6.0x10 8.0x10 2.2 2.4 2.6 2.8 3.0
1/2 1/2 -1
E [(V/cm) ] 1000/T (K )

J = AT2 exp( -(ϕ0 - βE1/2)/ κT )

β = ( e3/ Πε0K)1/2 Results:
Conditions: i) Absence of St. line
I) J Vs E1/2 must be a st. line. ii) The original K value is two order
The slope = β less than the calculated one.
ii) K from β must ≡ original K iii) ∆E & E relation is just opposite.
iii) ∆E should ↓ with ↑ E

Possibility of Schottky mechanism & pool Frenkel ruled out.

 Space Charge Conduction
The Lampert triangle in the J-V
plot at room temperature.
Pure Space Charge → Square law dependence
0.1

Modified by bulk generated charges.- due to
existing e- to compensate Oxy. Vac. Or thermally
1E-3
III excited valance band e-.

These Charges- screen the excess injected ch..

Space charge⇒ no. of injected charges ↑
logJ

1E-5

2.
0
II already existing charges.
7.1

These charges ⇒ linear nature if there is a
1E-7
ohmic contact.
I
0.98
> VTFL the space charge Limited Current
1E-9
0.1 1 10 Predominates and follow power law: I ∝ V2.
logV
Region I → slope = 0.98
Region II → slope = 7.1
Region III → slope = 2.0
⇓
Lampert’s Triangle
DC Leakage Current Characteristics Arrhenius plot of conductivity

1E-4
0
T= 100 C
1E-5 0
T= 125 C
0
T= 150 C
0
1E-6 T= 175 C
0
T= 200 C 1E-11
Current (amp)

1E-7

ln(J/E)
0.9
9e
1E-8
II V
1E-9

1E-10
I
1E-11 1E-12
1 10 2.1 2.2 2.3 2.4 2.5
voltage (V) 1000/T

The linear region ( I)- obey the Arrhenius equation: J~ exp( -∆E/ κT)
∆E → Activation Energy
κ → Boltzmann constant

∆E = 0.99 eV. → hopping of oxygen vacancy

Waser → A.E for oxygen. V. = 1eV.
 Trap filled voltage as a function of temperature

16
VTFL→ A voltage where the Fermi energy level would

increase well above all deep trap levels.

All traps filled > the TFL at a given temperature
12

While ↑ temp., some of the filled traps would reemit e- s
⇒ the trap site would become empty ⇒ ↑ VTFL with ↑temp.
VTFL (V)

8
Upto 1250C → follows Lampert’s Space charge law.(

mainly considered on conduction by electronic charges.)
4

To establish equilibrium of charges in the bulk of the thin
film, reasonable time is required – trapping and detrapping
0 50 100 150 200 would limit the distribution
0
Temperature ( C)
Detrapping rate
Trapping rate
Tt→c = υNtNc exp(-∆E/κT)
Tc→t = NcNtσt
υ→ Attempt frequency of e- to escape
N→ Density of unoccupied energy states
from the trap.
σ → Capture Cross Section of the traps
∆E → Energy difference.
Lower temperature At Higher temp

Very few e- in the upper energy state-
Significant amount of e- in C-band⇒↑
No much variation in trapping rate trapping rate & it overshadow detrapping.

Entire process limited by detrapping.
⇒ no. of e- required to fill trap is less.
 80 0.1K
1K
10K
70 100K

60
Some extrinsic effect such as
50
charge carrier contribution
ε'

40

30

20
0 50 100 150 200 250 300
0
Temp( C)

ε* = ε`- iε″
ε″ = ε∝+σ
σ/iεε0ω + a(T) (iω
ωn(T)-1)/ ε0 n(T) ⇒ dipole interaction
ε` = ε∝+ sin(n(T)Π Π/2) ωn(T)-1 a(T)/ ε0 A(T) ⇒ strength of polarisability
ε″ = σ/εε0ω + cos(n(T) Π/2) ωn(T)-1 a(T)/ ε0

N(T) = 1 there is no interaction (gas and liguid)

N(T) decreases with temp. ⇒ ↑ dipole interaction

↑ a(T) with temp ⇒ ↑ contribution of charge carrier term in ε″(sigma)

Pool Frenkel: ln (J/E) vs. E1/2

Ln (J/E) vs. 1/T ⇒ st. line
 Summary

XRD showed the crystallinity of the BZ thin film and there was
no secondary phases formation.

Surface morphology showed a dense grain structure.

SIMS revealed that the in-situ deposited films had a sharp
interface and the same time the ex-situ films had a interdiffusion

Dielectric responses ruled out the possibility of Pure Debye or
Maxwell- Wagner type relaxation and found to obey the universal
frequency response (Jonscher’s model)

Complex impedance and Modulus studies revealed the presence
of single parallel RC circuit.

Films of the BZ exhibited a space charge limited dc leakage
current.
 Plan for the Future work

The ac electrical studies can be extended to the microwave frequency regime to

understand the material behavior

The BZ thin films could be grown on different substrates and the substrate with
different orientation to correlate structure with electrical properties. The cross
sectional TEM and the glancing angle XRD studies could be useful to get more
information about the substrate and the film orientation.

The diffusion studies through SIMS could be done on the epitaxial BZ thin
films and correlate with the leakage current behavior, for the better understanding
of the leakage current mechanism.

Correlating the cross sectional TEM and the SIMS profile results can lead to a
better understanding of growth process, as well as defect chemistry.

Studies related to the formation and mobility of protonic charge carriers will be
useful in proton conductors.

The usage of different metal and conducting oxide electrodes can enhance the
device performance.
ACKNOWLEDGEMENT

Prof. S. B.Krupanidhi
Prof. K. Chattopadhyay
Prof. T. R. N. Kutty
Prof. K.B.R.Varma

Dr. A. K. Tyagi, Dr. S.Rajagopalan, Dr. Sornadurai, IGCAR, Kalpakkam.

Dr. Bharadwaja, Dr. Sanjeeb Saha, Dr. Sudipta Bhattacharya, Mr. P. Victor Louis
Arokiyaraj, Mr. Apurba Laha, Mr. Venkateshwaralu Mr. Ranjith,
Mr.Thirumalvalavan, Mr. Sameer Shah, Mr. Tripathi, Mr.Manju, Mr.Jayantho,
Mr.Dhananjaya, Mr.Asis, Miss. Vanaja.

Mr. Krishna, Mr.Gurulinga, Dr. Samphilip, Mr. Kannan, Mr. Sankaranarayana

& MRC staffs.

Friends:
Balu, M.P.Raja,Thiruna, Sevu, Sathya, Guru, Sudakar & R-Gang.
THANKS