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Electronic Devices and Circuits

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I CYCLE EXPERIMENTS

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Symbolic representation of PN Junction Diode

Circuit Diagram:

Fig-1 Diode under forward bias condition

Fig-2 Diode under reverse bias condition 2

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-No: Date: CHARACTERISTICS OF PN JUNCTION DIODE Aim: To study and plot volt-ampere characteristic of PN Junction Diode and determine its Q-point and dynamic resistance.

Apparatus Required: S. No 1 2 3 4 5 6 Items Diode Regulated Power supply Ammeter Voltmeter Bread Board Connecting Wires Range IN4007 0-30V 0-50mA (0-10)V (0-1)V Type Single MC MC Single strand Quantity 1 1 1 1 1 as req.

Formula used: Static Resistance, R=Vf/If Dynamic Resistance, r =Vf/If To find DC Load Line: E= (RfIf) +Vd Theory: Forward Bias Condition: When positive terminal of the battery is connected to the P type and the negative terminal to N type of the PN junction diode, the bias applied is known as forward bias. Operation: The applied potential with the external battery acts in opposition to the internal potential barrier. The applied positive potential repels the holes in P type region so that the holes move towards the junction and the applied negative potential repels the electrons in the N type region and the electrons move towards the junction. Eventually, when the applied potential is more than the internal barrier potential, the depletion region and internal potential barrier disappear.

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At the cut in voltage or threshold voltage (Vr), the potential barrier is overcome and the current through the junction starts to increase rapidly.

Model graph:

Tabulation: Forward bias: S. No Voltage (Vf) in volts Current (If) in mA Reverse bias: S.No Voltage (Vr) in volts Current (Ir) in uA

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Reverse bias condition:

When the negative terminal of the battery is connected to the P type and the positive terminal to the N type of the PN junction diode, the bias applied is known as reverse bias.

Operation:

Under applied reverse bias, holes which form the majority carriers of the P side move towards the negative terminal of the battery and electrons which forms the majority carriers of the N side are attracted towards the positive terminal of the battery. Hence, the width of the depletion region which is depleted of mobile charge carriers increases. Thus, the electric field produced by applied reverse bias, is in the same direction as the electric field of the potential barrier.

Therefore no current flows in the external circuit. Consequently, the minority carriers will flows towards their majority carrier side gives rise to small reverse current. This current is known as reverse saturation current, Io. Once the electric field intensity increases beyond a critical level, the p-n junction depletion zone breaks-down and current begins to flow, usually by either the Zener or avalanche breakdown processes.

Electronic Devices and Circuits

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Electronic Devices and Circuits

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Procedure: Forward bias: Connections are made as per the circuit diagram fig-1. Input voltage is varied corresponding diode voltage and current readings are tabulated. V-I characteristic of diode under forward bias condition is plotted. Reverse bias: Connections are made as per the circuit diagram fig-2. Input voltage is varied corresponding diode voltage and current readings are tabulated. V-I characteristic of diode under reverse bias condition is plotted.

Viva Questions: 1. What is meant by PN junction diode? 2. What is meant by barrier potential and threshold voltage? 3. What are the different types of breakdown occur in diode? 4. Give the expression for diode current equation and width of the depletion region. 5. What are the classifications of semiconductor devices? 6. What is meant by transient capacitance and diffusion capacitance?

Result:

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Symbolic representation of Zener Diode

Circuit Diagram: Under Forward Bias Condition:

Under Reverse Bias Condition:

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Ex-No: Date: CHARACTERISTIC OF ZENER DIODE

Aim: To study and plot volt-ampere characteristic of Zener Diode and find its dynamic resistance.

Apparatus Required: S. No 1 2 3 4 5 6 Items Zener Diode Regulated Power supply Ammeter Voltmeter Bread Board Connecting Wires Range Z 6V8 0-30V 0-50mA 0-10V Type Single MC MC Single strand Quantity 1 1 1 1 1 as req.

Theory: Zener diode is a special diode operating in the breakdown region of the ordinary diode. This diode is heavily doped when compared to ordinary diode. It exhibits almost the same properties, except the device is special in the reverse direction if the voltage is larger than the breakdown voltage known as "Zener knee voltage" or "Zener voltage". They are widely used to regulate the voltage across a circuit. When connected in parallel with a variable voltage source so that it is reverse biased, a Zener diode conducts when the voltage reaches the diode's reverse breakdown voltage.

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Model Graph:

Tabulation: Forward bias Condition: S.No Voltage (Vf) in volts Current (If) in mA

Reverse Bias Condition: S.No Voltage (Vr) in volts Current (Ir) in mA

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Procedure: Forward Bias: Connections are made as per the circuit diagram. Input voltage is varied corresponding diode voltage and current readings are tabulated. V-I characteristic of diode under forward bias condition is plotted. Find the dynamic resistance r =Vf/I f

Reverse Bias: Connections are made as per the circuit diagram. Input voltage is varied corresponding diode voltage and current readings are tabulated. V-I characteristic of diode under reverse bias condition is plotted. Find the dynamic resistance r = Vz/ Iz.

Result:

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Circuit Diagram: Half Wave Rectifier without Filter:

Half Wave Rectifier with Filter:

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Ex. No.: DATE: SINGLE PHASE HALF WAVE RECTIFIER WITH AND WITHOUT FILTER Aim: To obtain DC signal from AC signal by using half wave rectifier without and with filter and obtain ripple factor and Efficiency. Materials Required: S No 1. 2. 3. 4. 5. 6. 7. 8. 9. Theory: In a HWR, the diode is forward biased only during the positive half cycle of the input signal. The diode conducts and current flows through the load only for the positive half cycle of input voltage. During the negative half cycle the diode is reversed biased and the diode behaves as an open circuit. Hence there is no current flow through the load. The output DC signal is the pulsating DC signal. By using the basic capacitive filter we can convert the pulsating DC into pure DC signal. When no filter circuit is present output voltage Vdc = Vm/ The RMS value of the secondary voltage of the transformer is Vrms = Vm/2. Formula Used: The output DC power Pdc = VdcIdc The output AC power Pac=VrmsIrms Efficiency()= Pdc/ Pac Form Factor(FF)= Vrms/Vdc Ripple Factor = [(Vrms/ Vdc)2 1]1/2 or [(FF2-1)]1/2 Transformer Utilization ratio(TUF)= Pdc/VsIs Where,Vs & Is are rms voltage and rms current of the transformer secondary respectively 13 Item Diode Transformer CRO Resistor Bread board Ammeter Voltmeter Connecting wires Capacitor Range 230V/(0 9)V 0 30 MHz 1k 0-50mA 0-30V 22 F MC MC Single stand Specification IN4007 Qty 1 1 1 1 1 1 1 As req. 1

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Model Graph: Input Wave Form:

Output Wave Form without Filter:

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Procedure: 1. The circuit connections are given as per the circuit diagram. 2. The supply voltage is switched on. 3. The DC voltage and current are noted down. 4. By using the CRO observe the wave forms. 5. From the tabulated reading find the ripple factor and Efficiency Viva Questions: 1. What is rectifier? 2. Explain the following terms: I. II. III. IV. V. Ripple factor Peak Inverse Voltage Average voltage and current Rectifier efficiency Ripple voltage

3. What is the main disadvantage of HWR? 4. What is called % regulation?

Result:

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Output Wave Form with Filter:

Tabulation: Without filter:


Vm(V) Vrms(V) Vdc (V) Ripple factor Efficiency

With filter:
Vm(V) Vrms(V) Vdc (V) Ripple factor Efficiency

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Circuit Diagram: Full Wave Rectifier without Filter:

Center tap transformer 230V/(12V-0V-12V)

Full Wave Rectifier with Filter:

Center tap transformer 230V/(12V-0V-12V)

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Ex. No.: DATE: SINGLE PHASE FULL WAVE RECTIFIER WITH AND WITHOUT FILTER Aim: To obtain DC signal from AC signal by using half wave rectifier without and with filter and obtain ripple factor and Efficiency.

Materials Required: S No 1. 2. 3. 4. 5. 6. 7. 8. 9. Theory: Item Diode Transformer CRO Resistor Bread board Ammeter Voltmeter Connecting wires Capacitor Range 230V/(0 9)V 0 30 MHz 1k 0-50mA 0-30V 22 F MC MC Single stand Specification IN4007 Qty 2 1 1 1 1 1 1 As req. 1

In FWR, current flows through the load in the same direction for both the half cycles of the input voltage. This can be achieved with two diodes working alternatively. During the positive half cycle diodes D1 and D2 conducts and supplies current to the load. During the negative half cycle diodes D3 and D4 will conducts and current flows through the load in the same direction. Hence the output obtained as the full wave rectifier DC voltage. The output DC signal is the pulsating DC signal. By using the basic capacitive filter we can convert the pulsating DC into pure DC signal. When no filter circuit is present output voltage Vdc = 2Vm/. The RMS value of the secondary voltage of the transformer is Vrms = Vm/2.

Formula Used: Ripple Factor = [(Vrms/ Vdc)2 1]1/2. 18

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Model Graph: Input Wave Form:

Output Wave Form without Filter:

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Output Wave Form with Filter:

Tabulation: Without filter:


Vm Vrms Vdc Ripple factor Efficiency

With filter:
Vm Vrms Vdc Ripple factor Efficiency

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Procedure: 1. The circuit connections are given as per the circuit diagram. 2. The supply voltage is switched on. 3. The DC voltage and current are noted down. 4. By using the CRO observe the wave forms. 5. From the tabulated reading find the ripple factor and percentage regulation.

Viva Questions:

1. What are the various types of filters used in rectifier circuit? 2. What is surge current? 3. How the surge current can be eliminated? 4. State the expression for ripple factor. 5. Explain the effect of load resistance and filter capacitance on the load voltage.

Result:

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Pin Configuration for BC 547 NPN TRANSISTOR

Circuit Diagram:

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Ex-No: Date: CHARACTERISTIC OF TRANSISTOR IN CE CONFIGURATION

Aim: To study and plot the input and output characteristics of bipolar junction transistor in common emitter configuration and determine its hybrid parameters.

Apparatus Required:

S. No 1 2 3 4 5 6 7 8 Formula Used:

Items Transistor Regulated Power Supply Resistor Ammeter Voltmeter Voltmeter Bread Board Connecting wires

Range (0-30V) 1K (0-50mA) (0-3V) (0-30V)

Type BC107 Dual MC MC MC single strand

Quantity 1 1 2 2 1 1 1 AS req.

Input Resistance, hie= Vbe/ Ib at constant Vce Reverse transfer ratio, hre= Vbe / Vce at constant Ib Output Conductance, hoe= Ic / Vce at constant Ib Forward Current Transfer Ratio, hfe = Ic / Ib at constant Vce

Theory: A bipolar (junction) transistor (BJT) is a type of transistor. It is a three-terminal device constructed of doped semiconductor material and may be used in amplifying or switching applications.

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Model Graph:

Input Characteristic:

Output Characteristics:

Tabulation: Input Characteristic: Vce= Vbe (V) Ib (mA) Vce= Vbe (V) Ib (mA) Vce= Vbe (V) Ib (mA)

S. No

Output Characteristics: Ib= Vce (V) Ic (mA) Ib= Vce (V) Ic (mA) Ib= Vce (V) Ic (mA)

S. No

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Although a small part of the transistor current is due to the flow of majority carriers, most of the transistor current is due to the flow of minority carriers and so BJTs are classified as minority-carrier devices. Forward-active (or simply, active): The emitterbase junction is forward biased and the basecollector junction is reverse biased. Most bipolar transistors are designed to afford the greatest common-emitter current gain, F, in forward-active mode. If this is the case, the collectoremitter current is approximately proportional to the base current, but many times larger, for small base current variations. Reverse-active (or inverse-active or inverted): By reversing the biasing conditions of the forward-active region, a bipolar transistor goes into reverse-active mode. In this mode, the emitter and collector regions switch roles. Because most BJTs are designed to maximize current gain in forward Active mode, the F in inverted mode is several (23 for the ordinary germanium transistor) times smaller. This transistor mode is seldom used, usually being considered only for failsafe conditions and some types of bipolar logic. The reverse bias breakdown voltage to the base may be an order of magnitude lower in this region. Saturation Region: With both junctions forward-biased, a BJT is in saturation mode and facilitates high current conduction from the emitter to the collector. This mode corresponds to a logical "on", or a closed switch. Cutoff Region: In cutoff, biasing conditions opposite of saturation (both junctions reverse biased) are present. There is very little current flow, which corresponds to a logical "off", or an open switch. Active Region: In active region, the emitter base junction is forward bias and the collector base junction is reverse bias. Common Emitter Configuration: The input is connected between base and emitter while output is connected between collector and emitter. Emitter is common to both input and output circuit. Input Characteristic: The curve drawn between base current, (Ib) and base-emitter voltage (Vbe) and base current Ib at constant collector-emitter voltage (Vce). Output Characteristic: It is the curve drawn between collector current Ic and collector-emitter voltage Vce for a constant base current Ib.

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Procedure: Input Characteristic: Connections are made as per the circuit diagram. Keeping the collector-emitter voltage (Vce) constant varies the emitter-base voltage (Vbe) and note down the base current (Ib). Repeat the step2 for varies values of constant Vce and tabulate the readings. Now plot the graph for the tabulated values. Output Characteristic: Connections are made as per the circuit diagram. Keeping the base current (Ib) constant vary collector-emitter voltage (Vce) tabulate collector current (Ic). Repeat the step 2 for varies values of constant Ib and tabulate the readings. Now plot the graph for the tabulated values. Viva Questions: 1. What is Transistor? 2. Explain the working of NPN transistor? 3. What is reverse saturation current? 4. What is meant by emitter efficiency? 5. Give the h parameters of CE configuration? 6. Explain the input and output characteristics of CE configuration.

Result:

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Pin Configuration for BC 547 NPN TRANSISTOR

Circuit Diagram:

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Ex-No: Date: CHARACTERISTIC OF TRANSISTOR IN CB CONFIGURATION

Aim: To study and plot the input and output characteristics of bipolar junction transistor in common base configuration.

Apparatus Required:

S. No 1 2 3 4 5 6 7

Items Transistor Regulated Power Supply Resistor Ammeter Voltmeter Bread Board Connecting wires

Range (0-30V) 1K (0-50mA) (0-30V)

Type BC107 Dual MC MC single stand

Quantity 1 1 2 2 2 1 AS req.

Formula Used: (1) Input impedance hib = Veb / Ie , with Vcb constant (2) Output conductance hob = Ic / Vcb , with Ie constant (3) Forward current gain hfb = Ic / Ie , with Vcb constant (4) Reverse Voltage gain hrb = Veb / Vcb , with Ie constant Theory: A bipolar (junction) transistor (BJT) is a type of transistor. It is a three-terminal device constructed of doped semiconductor material and may be used in amplifying or switching applications.

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Model Graph:

Input Characteristics:

Output Characteristics:

Tabulation: Input Characteristic: Vcb= Veb (V) Ie (mA) Vcb= Veb (V) Ie (mA) Vcb= Veb (V) Ie (mA)

S. No

Output Characteristics:

S. No

Ie = Vcb (V) Ic (mA)

Ie = Vcb (V) Ic (mA)

Ie = Vcb (V) Ic (mA)

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Although a small part of the transistor current is due to the flow of majority carriers, most of the transistor current is due to the flow of minority carriers and so BJTs are classified as minority-carrier devices. Forward-active (or simply, active): The emitterbase junction is forward biased and the basecollector junction is reverse biased. Most bipolar transistors are designed to afford the greatest common-emitter current gain, F, in forward-active mode. If this is the case, the collectoremitter current is approximately proportional to the base current, but many times larger, for small base current variations. Reverse-active (or inverse-active or inverted): By reversing the biasing conditions of the forward-active region, a bipolar transistor goes into reverse-active mode. In this mode, the emitter and collector regions switch roles. Because most BJTs are designed to maximize current gain in forward-active mode, the F in inverted mode is several (23 for the ordinary germanium transistor) times smaller. This transistor mode is seldom used, usually being considered only for failsafe conditions and some types of bipolar logic. The reverse bias breakdown voltage to the base may be an order of magnitude lower in this region. Saturation Region: With both junctions forward-biased, a BJT is in saturation mode and facilitates high current conduction from the emitter to the collector. This mode corresponds to a logical "on", or a closed switch. Cutoff Region: In cutoff, biasing conditions opposite of saturation (both junctions reverse biased) are present. There is very little current flow, which corresponds to a logical "off", or an open switch. Common Base Configuration: The input is connected between base and emitter while output is connected between collector and base. Base is common to both input and output circuit. Input Characteristic: The curve drawn between base current, (Ib) and base-emitter voltage (Vbe) and base current Ib at constant collector-base voltage (Vcb). Output Characteristic: It is the curve drawn between collector current Ic and collector-emitter voltage (Vce) for a constant base current (Ie).

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Procedure: Input Characteristic: Connections are made as per the circuit diagram. Keeping the collector-base voltage (Vcb) constant varies the emitter-base voltage (Vbe) and note down the emitter current (Ie). Repeat the step2 for varies values of constant Vcb and tabulate the readings. Now plot the graph for the tabulated values. Output Characteristic: Connections are made as per the circuit diagram. Keeping the emitter current (Ie) constant varies collector-base voltage (Vcb) tabulate collector current (Ic). Repeat the step 2 for varies values of constant Ie and tabulate the readings. Now plot the graph for the tabulated values. Viva Questions: 1. What is base width modulation? 2. Explain Transfer Resistance. 3. Explain the construction of PNP transistor. 4. Give the h parameters of CB configuration? 5. Explain the input and output characteristics of CB configuration.

Result:

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Pin Configuration for BC 547 NPN TRANSISTOR

Circuit Diagram:

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EX.No: Date:
CHARACTERISTICS OF COMMON COLLECTOR CONFIGURATION

AIM: To determine the characteristics of BJT under Common collector configuration.

Apparatus required: S.No. Apparatus required 1. 2. 3. 4. 5. 6. 7. RPS Voltmeter Ammeter Resistance Transistor Bread board Connecting wires Range (0-30)V (0-1)V (0-100)A 10K BC 107 Quantity 2 2 2 1 1 1 As required

Theory: A bipolar (junction) transistor (BJT) is a type of transistor. It is a three-terminal device constructed of doped semiconductor material and may be used in amplifying or switching applications. Although a small part of the transistor current is due to the flow of majority carriers, most of the transistor current is due to the flow of minority carriers and so BJTs are classified as minority-carrier devices. Forward-active (or simply, active): The emitterbase junction is forward biased and the basecollector junction is reverse biased. Most bipolar transistors are designed to afford the greatest common-emitter current gain, F, in forward-active mode. If this is the case, the collectoremitter current is approximately proportional to the base current, but many times larger, for small base current variations.

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MODEL GRAPH FOR CC CONFIGURATION: INPUT CHARACTERISTICS

OUTPUT CHARACTERISTICS

Tabulation : Input Characteristics: S. No Vce= Vbc (V) Ib (mA) Vce= Vbc (V) Ib (mA) Vce= Vbc (V) Ib (mA)

Output Characteristics:

S. No

Ib = Vce (V) Ie (mA)

Ib = Vce (V) Ie (mA)

Ib = Vce (V) Ie (mA)

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Reverse-active (or inverse-active or inverted): By reversing the biasing conditions of the forward-active region, a bipolar transistor goes into reverse-active mode. In this mode, the emitter and collector regions switch roles. Because most BJTs are designed to maximize current gain in forward-active mode, the F in inverted mode is several (23 for the ordinary germanium transistor) times smaller. This transistor mode is seldom used, usually being considered only for failsafe conditions and some types of bipolar logic. The reverse bias breakdown voltage to the base may be an order of magnitude lower in this region. Saturation Region: With both junctions forward-biased, a BJT is in saturation mode and facilitates high current conduction from the emitter to the collector. This mode corresponds to a logical "on", or a closed switch. Cutoff Region: In cutoff, biasing conditions opposite of saturation (both junctions reverse biased) are present. There is very little current flow, which corresponds to a logical "off", or an open switch. Common Collector Configuration: The input is connected between base and collector while output is connected between collector and emitter. Collector common to both input and output circuit. Input Characteristic: The curve drawn between base current, (Ib) and base-collector voltage (Vbc) at constant collector-emitter voltage (Vce). Output Characteristic: It is the curve drawn between emitter current Ie collector-emitter voltage (Vce) for a constant base current (Ie). and is

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PROCEDURE:

Input characteristics: 1. Keeping the voltage across collector to emitter (Vce) as constant, tabulate the values of base current for various values of base collector voltage (Vbc).
2. Repeat

the same procedure for various values of Vce.

Output characteristics: 1. Keeping the base current as constant, tabulate the values of emitter current (Ie) for various values of collector emitter voltage (Vce). 2. Repeat the same procedure for various constant values of base current (Ib).

Result:

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Circuit Diagram:

Model Graph:

Tabulation: S. No Frequency(Hz) Current(mA)

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Ex-No: Date: FREQUENCY RESPONSE OF SERIES AND PARALLEL RESONANCE Aim: To obtain the frequency response of parallel and series resonance circuits.

Apparatus Required: S. No 1 2 3 4 5 6 7 Statement: Resonance is defined as a phenomenon in which the applied voltage and resulting current are in phase with each other. In other words, an ac circuit is said to be in resonance it exhibits unity power factor condition, which means the applied voltage and resulting current are in phase. In ac RLC series circuit under the condition of resonance, the inductive reactance gets cancelled with capacitive reactance and the impedance of a ac circuit consists only resistance. Resonance is series circuits are referred as series resonance or simply resonance. Characteristic of series resonance: Input impedance is purely resistive. Applied voltage and current are in phase. Circuit current is maximum. Input impedance is equal to resistance. Power factor is unity Resonance frequency, Fr = 1/(2LC). Items Function Generator Ammeter Resistor Capacitor Inductor Bread Board Connecting Wires Range (0-30MHz) (0-5)mA 1K 0.07F 50 mH Type MC Quantity 1 1 1 1 1 1 as req.

Single stand

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Circuit Diagram for Parallel Resonance:

Model Graph:

Tabulation: S.No Frequency(Hz) Voltage(volts)

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Parallel resonant circuit: Similar to a series ac circuit there can be a resonance in parallel circuit. When the power factor of a parallel ac circuit is unity, ie the voltage and total current are in phase at particular frequency then the parallel circuit is said to be at resonance occurs is called resonant. Procedure: Series circuit: Connections are made as per the circuit diagram. Switch on the function generator and set the sinusoidal input voltage of 2v in function generator. Set the function generator to a low frequency of 500 Hz. Note the current and tabulate the readings. Increase the frequency in steps upto 7 kHz. Repeat the step and draw the graph between frequency Vs current.

Parallel circuit: Connections are made as per the circuit diagram. Switch on the function generator and set sinusoidal input voltage of in function generator. Set the function generator to a low frequency of 500 Hz. Note the voltage and tabulate the readings. Increase the frequency in steps upto 10 kHz. Repeat the step and draw the graph between frequency Vs voltage.

Result:

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CIRCUIT DIAGRAM: HIGH PASS FILTER:

LOW PASS FILTER:

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Ex.No: Date : REALISATION OF PASSIVE FILTERS AIM: To determine experimentally the frequency response of low pass and high pass filters and note down the cut-off frequency Apparatus Required: S.No. Apparatus required 1. 2. 3. 4. 5. 6. 7. Function Generator CRO Resistor Inductor Capacitor Bread board Connecting wires Range Quantity 1 1 1 1 1 1 As required

10K 10mH 0.1F

THEORY: HIGH PASS FILTER: This filter allows only high frequency of AC voltage and rejects the low frequency components at the output. We know that Xc<1/f ( reactance is inversely proportional to frequency). At low frequency, reactance is very high so it doesnt allow any signal at the output. At high frequency, reactance is very low so it doesnt allow all signal at the output. LOW PASS FILTER: This filter allows only high low frequency of AC voltage and rejects the high frequency components at the output. We know that Xc<1/f ( reactance is inversely proportional to frequency). At low frequency, reactance is very low so it doesnt allow all signals at the output. At high frequency, reactance is very high so it doesnt allow any signal at the output.

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TABULATION: HIGH PASS FILTER


Input voltage in Volts Frequency in hz Output voltage in volts Gain= 20log(Vo/Vin) In db

LOW PASS FILTER


Input voltage in Volts Frequency in hz Output voltage in volts Gain= 20log(Vo/Vin) In db

MODEL GRAPH:

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Procedure: 1. The connections are made as per the Circuit diagram 2. Switch on the power supply and increase the input frequency in steps of 100HZ and note down the corresponding output voltage in the voltmeter 3. Calculate the gain value 4. Draw the Graph between frequency Vs gain

Result:

HIGH PASS FILTER: Designed cut-off frequency.Hz obtained cut-off frequency.Hz

LOW PASS FILTER: Designed cut-off frequency.Hz obtained cut-off frequency.Hz

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