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Lecture outline
Review Photodiode Pixel Structure MOS Transistor overview and fabrication Basic two-terminal MOS structure Regions of operation Solution for charges and potentials Approximations for regions of operation All figures based on Tsividis, McAndrew, Operation ans Modeling of the MOS Transistor Copyright Oxford University Press
Lecture 5
Photo-current generation
Practical pn-junction photodiode under reverse bias
hn
hn
n+
GL ( x )
p ; NA
x
xn
xp
xc
One-side junction
n+ = N D ? p = N A
xn 0, x p W
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Junction current
The total current is the sum of dark and photon generated currents
J = J PH
Dn 1 -a W + J 0 = qF0 1 e + qn p 0 Ln 1 + a Ln J
J0 J PH qF0
VA
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3T APS design
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Contact potentials
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Interface charge
Parasistic interface charges Contact potential
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Flatband voltage
Assume Need to apply external voltage in order to straighten energy bands
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Charge inversion
Inversion charge basis of current transport
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Regions of operation
Flatband
Accumulation
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Accumulation
Condition for charge accumulation
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Deep Depletion
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Inversion
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Weak inversion
Since
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Strong inversion
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Moderate inversion
No simple solution for semiconductor charges and potentials in moderate inversion !!!
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