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MBR20150FCT
Power Schottky Rectifier - 20Amp 150Volt
Features
-Plastic package has Underwriters Laboratory Flammability Classifications 94V-0 -High Junction Temperature Capability -Low forward voltage, high current capability -High surge capacity -Low power loss, high efficiency -ESD performance human body mode > 6 KV
ITO-220AB
B C D K E A L M
Application
-AC/DC Switching Adaptor and other Switching Power Supply -TFT-LCD and DVD Power Supply
P O I
F G J
K A2
Electrical characteristics
Parameters Maximum Instantaneous Forward Voltage Maximum Reverse Leakage Current Maximum Voltage Rate of Change Typical Thermal Resistance, Junction to Case Symbol Ratings 0.88V 0.69V 0.01mA 10mA 10,000 V/s Conditions Tc = 25C Tc = 125C Tc = 25C Tc = 125C Rated VR
DIM A B C D E F G H I J K L M N O P
VF IR
dv/dt
R (j-c)
4.5 C/W
Per diode
DIMENSIONS INCHES MM MAX MIN MAX MIN .577 .600 14.65 15.25 .386 .406 9.80 10.30 .098 .114 2.50 2.90 .258 .274 6.55 6.95 .315 .331 8.00 8.40 .110 .161 2.80 4.10 .508 .551 12.90 14.00 .089 .106 2.25 2.70 .020 .028 0.50 0.70 .020 .028 0.50 0.70 .120 .138 3.05 3.50 .169 .185 4.30 4.70 .051 .063 1.30 1.60 .079 .112 2.00 2.85 .043 .055 1.10 1.40 .051 .071 1.30 1.80
NOTE
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MBR20150FCT
PF(av)(W)
5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 9 10 11 12
IF(av)(A)
8 6 Rth(j-a) = 15/W 4 2 0
25
50
75
100
125
150
175
IF(av)(A)
Tamb()
Figure 1. Average forward power dissipation versus average forward current (per diode)
Figure 2. Average forward current versus ambient temperature (= 0.5, per diode)
1.0
0.8
Zth(j-c)/R th(j-c)
125
IM(A)
Tc = 50 Tc = 75
0.6
= 0.5
0.4
= 0.2 = 0.1
Tc = 125
0.2
Single pulse
1E+0
0.0 1E-3
1E-2
1E-1
1E+0
t(s)
tp(s)
Figure 3. Non repetitive surge peak forward current versus overload duration (maximum values, per diode)
Figure 4. Relative variation of thermal impedance junction to case versus pulse duration (per diode)
1000
IR( A)
C(pF)
100
F = 1MHz Tj = 25
Tj = 25
25
50
75
100
125
150
10
20
50
100
200
VR(V)
VR(V)
Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode)
Figure 6. Junction capacitance versus reverse voltage applied (typical values, per diode)
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MBR20150FCT
100
80 70 60
Rth(j-a)( /W)
10
50 40 30 20 10
IFM(A)
Tj = 125 0.1
10
12
14
16
18
20
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
S(cm2)
VFM(V)
Figure 7. Forward voltage drop versus forward current (maximum values, per diode)
Figure 8. Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board, copper thickness : 35 m) (STPS20150CG only)
Sirectifier Global Corp., Delaware, U.S.A. U.S.A.: sgc@sirectsemi.com France: ss@sirectsemi.com Taiwan: se@sirectsemi.com Hong Kong: hk@sirectsemi.com China: st@sirectsemi.com Thailand: th@sirectsemi.com Philippines: aiac@sirectsemi.com Belize: belize@sirectsemi.com
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