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SEMICONDUCTOR TECHNICAL DATA by IRF540/D


 
   
 
   
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET
This advanced TMOS power FET is designed to withstand high 27 AMPERES
energy in the avalanche and commutation modes. This new energy 100 VOLTS
efficient design also offers a drain–to–source diode with a fast RDS(on) = 0.070 OHMS
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters, and PWM motor
controls. These devices are particularly well suited for bridge 
circuits where diode speed and commutating safe operating area
are critical and offer additional safety margin against unexpected
voltage transients.
• Avalanche Energy Specified D
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature G

CASE 221A–09
TO-220AB

MAXIMUM RATINGS (TC = 25°C unless otherwise noted)

Rating Symbol Value Unit
Drain–to–Source Voltage VDSS 100 Vdc
Drain–to–Gate Voltage (RGS = 1.0 MΩ) VDGR 100 Vdc
Gate–to–Source Voltage — Continuous VGS ± 20 Vdc
Gate–to–Source Voltage — Non–repetitive (tp ≤ 10 ms) VGSM ± 40 Vpk

Drain Current — Continuous ID 27 Adc

Drain Current — Continuous @ 100°C ID 19
Drain Current — Single Pulse (tp ≤ 10 ms) IDM 95 Apk
Total Power Dissipation PD 145 Watts
Derate above 25°C 1.16 W/°C

Operating and Storage Temperature Range TJ, Tstg – 55 to 150 °C

Single Pulse Drain–to–Source Avalanche Energy — STARTING TJ = 25°C EAS 365 mJ
(VDD = 50 Vdc, VGS = 10 Vdc, PEAK IL = 27 Apk, L = 1.0 mH, RG = 25 W)
Thermal Resistance — Junction–to–Case° RθJC 0.86 °C/W
Thermal Resistance — Junction–to–Ambient° RθJA 62.5
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds TL 260 °C
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
E–FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

REV 3

 Motorola TMOS
Motorola, Inc. 1998 Power MOSFET Transistor Device Data 1
IRF540
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain–to–Source Breakdown Voltage V(BR)DSS Vdc
(VGS = 0 Vdc, ID = 0.25 mAdc) 100 — —
Temperature Coefficient (Positive) — 116 — mV/°C
Zero Gate Voltage Drain Current IDSS mAdc
(VDS = 100 Vdc, VGS = 0 Vdc) — — 10
(VDS = 100 Vdc, VGS = 0 Vdc, TJ = 125°C) — — 100
Gate–Body Leakage Current IGSS nAdc
(VGS = ± 20 Vdc, VDS = 0 Vdc) — — 100

ON CHARACTERISTICS(1)
Gate Threshold Voltage Cpk ≥ 2.0(3) VGS(th) Vdc
(VDS = VGS, ID = 250 µAdc) 2.0 2.9 4.0
Threshold Temperature Coefficient (Negative) — 6.8 — mV/°C
Static Drain–to–Source On–Resistance Cpk ≥ 2.0(3) RDS(on) Ohms
(VGS = 10 Vdc, ID = 15 Adc) — 0.047 0.070

Drain–to–Source On–Voltage VDS(on) Vdc

(VGS = 10 Vdc, ID = 27 Adc) — — 1.9
(VGS = 10 Vdc, ID = 15 Adc, TJ = 125°C) — — 1.8
Forward Transconductance (VDS = 15 Vdc, ID = 15 Adc) gFS 6.0 15 — Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss — 1460 1600 pF
Output Capacitance (VDS = 25 Vdc,
Vdc VGS = 0 Vdc,
Vdc
Coss — 390 800
f = 1.0 MHz)
Transfer Capacitance Crss — 120 300

SWITCHING CHARACTERISTICS(2)
Turn–On Delay Time td(on) — 11.6 30 ns
Rise Time ( DD = 30 Vdc,
(V Vd , ID = 15 Adc,
Ad , tr — 50 60
Turn–Off Delay Time VGS = 10 Vdc, RG = 4.7 Ω) td(off) — 26 80
Fall Time tf — 19 30
Gate Charge QT — 50 60 nC
(See Figure 8) ((VDS = 80 Vdc,
Vd , ID = 27 Adc,
Ad , Q1 — 9.0 —
VGS = 10 Vdc) Q2 — 26 —
Q3 — 20 —
SOURCE–DRAIN DIODE CHARACTERISTICS
Forward On–Voltage VSD Vdc
(IS = 27 Adc, VGS = 0 Vdc) — 0.93 2.4
(IS = 27 Adc, VGS = 0 Vdc, TJ = 125°C) — 0.84 —
Reverse Recovery Time trr — 110 — ns

((IS = 27 Adc,
Ad , VGS = 0 Vdc,
Vd , ta — 100 —
dIS/dt = 100 A/µs) tb — 10 —
Reverse Recovery Stored Charge QRR — 0.67 — mC
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance Ld nH
(Measured from the contact screw on tab to center of die) — 3.5 —
(Measured from the drain lead 0.25″ from package to center of die) — 4.5 —
Internal Source Inductance Ls
(Measured from the source lead 0.25″ from package to source bond pad) — 7.5 —

Ť Ť
(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) Reflects typical values. Cpk + Max limit – Typ
3 sigma

2 Motorola TMOS Power MOSFET Transistor Device Data

 IRF540
TYPICAL ELECTRICAL CHARACTERISTICS

55 60
TJ = 25°C 9V
50 VDS ≥ 10 V TJ = –55°C
8V 7V
45 50
VGS = 10 V
I D, DRAIN CURRENT (AMPS)

25°C

ID, DRAIN CURRENT (AMPS)

40 100°C
40
35
30
6V 30
25
20
20
15
10 5V
10
5
0 0
0 1 2 3 4 5 6 7 8 9 10 2 3 4 5 6 7 8
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics Figure 2. Transfer Characteristics

RDS(on), DRAIN–TO–SOURCE RESISTANCE (OHMS)

R DS(on), DRAIN–TO–SOURCE RESISTANCE (OHMS)

0.09 0.060
VGS = 10 V TJ = 25°C
0.08 TJ = 100°C
0.055
0.07
VGS = 10 V
0.06 0.050
25°C
0.05 15 V
0.045
0.04
–55°C
0.03 0.040
0.02
0.035
0.01
0 0.030
0 5 10 15 20 25 30 35 40 45 50 55 0 5 10 15 20 25 30 35 40 45 50 55
ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current Figure 4. On–Resistance versus Drain Current
and Temperature and Gate Voltage

2.0 1000
RDS(on) , DRAIN–TO–SOURCE RESISTANCE

VGS = 10 V VGS = 0 V
1.8 TJ = 125°C
ID = 15 A
1.6
IDSS, LEAKAGE (nA)

1.4
100°C
(NORMALIZED)

1.2
1.0 100
0.8
0.6
0.4
0.2
0 10
–50 –25 0 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 90 100 110
TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 5. On–Resistance Variation with Figure 6. Drain–to–Source Leakage Current

Temperature versus Voltage

Motorola TMOS Power MOSFET Transistor Device Data 3

IRF540
TYPICAL ELECTRICAL CHARACTERISTICS

4500 10 80

VDS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
VDS = 0 V VGS = 0 V
4000 Ciss 9 QT VGS 72

3500 TJ = 25°C 8 64
Q1 Q2
C, CAPACITANCE (pF)

7 56
3000
Crss 6 48
2500
5 40
2000
Ciss 4 32
1500
3 24
1000 TJ = 25°C
2 ID = 27 A 16
Coss
500 1 8
Crss Q3 VDS
0 0 0
–10 –5 0 5 10 15 20 25 0 5 10 15 20 25 30 35 40 45 50
VGS VDS
QG, TOTAL GATE CHARGE (nC)
GATE–TO–SOURCE OR DRAIN–TO–SOURCE VOLTAGE (VOLTS) Figure 8. Gate–to–Source and
Drain–to–Source Voltage versus Total Charge
Figure 7. Capacitance Variation

1000 30
TJ = 25°C
ID = 15 A TJ = 25°C
IS, SOURCE CURRENT (AMPS) 25
VDD = 30 V VGS = 0 V
VGS = 10 V
100 20
t, TIME (ns)

tr
tf 15
td(off)
10 td(on) 10

1.0 0
1.0 10 100 0.55 0.6 0.65 0.7 0.75 0.8 0.85 0.9 0.95
RG, GATE RESISTANCE (OHMS) VSD, SOURCE–TO–DRAIN VOLTAGE (VOLTS)

Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage versus
versus Gate Resistance Current

1000 400
VGS = 20 V RDS(on) LIMIT
EAS , SINGLE PULSE DRAIN–TO–SOURCE

SINGLE PULSE THERMAL LIMIT 350 ID = 27 A

TC = 25°C PACKAGE LIMIT
ID, DRAIN CURRENT (AMPS)

300
AVALANCHE ENERGY (mJ)

100
10 ms 250

200
100 ms 150
10
1.0 ms
100
10 ms
50
dc
1.0 0
0.1 1.0 10 100 1000 25 50 75 100 125 150
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (°C)

Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus
Safe Operating Area Starting Junction Temperature

4 Motorola TMOS Power MOSFET Transistor Device Data

 IRF540
1.0
D = 0.5
Rthjl(t), EFFECTIVE TRANSIENT

0.2
THERMAL RESISTANCE

0.1
0.1 0.05 P(pk) RθJC(t) = r(t) RθJC
RθJC = 1.67°C/W MAX
0.02
D CURVES APPLY FOR POWER
t1 PULSE TRAIN SHOWN
0.01 t2 READ TIME AT t1
SINGLE PULSE TJ(pk) – TC = P(pk) RθJC(t)
DUTY CYCLE, D = t1/t2

0.01
1.0E–05 1.0E–04 1.0E–03 1.0E–02 1.0E–01 1.0E+0
t, TIME (seconds)

Figure 13. Thermal Response

Motorola TMOS Power MOSFET Transistor Device Data 5

IRF540
PACKAGE DIMENSIONS

SEATING NOTES:
–T– PLANE 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
B F C 2. CONTROLLING DIMENSION: INCH.
T 3. DIMENSION Z DEFINES A ZONE WHERE ALL
S BODY AND LEAD IRREGULARITIES ARE
4 ALLOWED.

INCHES MILLIMETERS
Q A DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
1 2 3 U B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
H D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
K G 0.095 0.105 2.42 2.66
Z H 0.110 0.155 2.80 3.93
J 0.018 0.025 0.46 0.64
K 0.500 0.562 12.70 14.27
L R L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
V J Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
G S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
D
U 0.000 0.050 0.00 1.27
N V 0.045 ––– 1.15 –––
Z ––– 0.080 ––– 2.04
CASE 221A–09
(TO–220AB)
ISSUE Z

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6 ◊ IRF540/D
Motorola TMOS Power MOSFET Transistor Device Data