Objective Electrical Engineering

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Objective Electrical Engineering

Wednesday, April 13, 2011

Special Electronic Devices

Special Electronic Devices

Notes: Click on "Grade Quiz" (at bottom of form) to see how you do!The number of correct answers displayed. Click on "Check" if u want check individually. click on "ans" to know the correct answer. 1.Match List I (Devices) with list II (Characteristics) and select the correct answer: List I A. BJT B. MOSFET C. Tunnel diode D. Zener diode List II 1. Voltage controlled negative resistance 2. High current gain 3. Voltage regulation 4. High input impedance ........A B C D a. 1 4 2 3

b. 2 4 1 3

c. 2 3 1 4

d. 1 3 2 4 Check Ans

2.SCR turns OFF from conducting state to blocking state on a. Reducing gate current

b. Reversing gate voltage

c. Reducing anode current below holding current value

d. Applying ac to the gate Check Ans

3.Match List I with List II and select the correct answer: List I (Devices) A. Silicon diode B. Germanium diode

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C. LED D. PIN diode List II (Property) 1. High frequency applications 2. Very low reverse bias saturation current 3. Low forward bias voltage drop 4. Cut-off wavelength ........A B C D a. 1 3 4 2

b. 2 4 3 1

c. 1 4 3 2

d. 2 3 4 1 Check Ans

4.

The above graph depicts a. drain characteristic of a MOSFET

b. drain characteristic of an IGBT

c. volt-ampere characteristic of a triac

d. volt-ampere characteristic of an SCR Check Ans

5.An SCR triggered by a current pulse through its gate can be turned off by a. giving another pulse of the same polarity to the gate

b. by giving pulse to the cathode

c. by giving pulse to the anode

d. by reversing the polarity of anode and cathode voltage Check Ans

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6.Match List I (Operating point on the I -V characteristic) with List II (Devices) and select the correct answer: List I A. 1st quadrant B. 2nd quadrant C. 3rd quadrant D. 4th quadrant List II 1. Solar cell 2. Photo detector with high sensitivity 3. Photo detector with low sensitivity 4. Rectifier diode Codes; ........A B C D a. 4 3 2 1

b. 3 4 2 1

c. 3 4 1 2

d. 4 3 1 2 Check Ans

7.Match list I with list II and select the correct answer: List I A. Gunn Diode B. Solar Cell C. MOSFET D. SCR List II 1. Junction less device 2. Single junction device 3. Double junction device 4. Triple junction device ........A B C D a. 1 2 3 4

b. 3 4 1 2

c. 1 4 3 2

d. 3 2 1 4 Check Ans

8.Match List I with List II and select the correct answer : List I (Diode type) A. Zener Diode B. Gunn Diode C. Schottky D. Diode E. Tunnel Diode List H (Important properties) 1. Negative resistance device fabricated using semiconductors like Si, Ga,

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As, Ge etc. can be operated at a frequency of 10 GHz 2. Quantum mechanical tunnelling with very thin depletion layers under reverse bias operated as a reference voltage sources 3. Negative conductance device, operates on the principle of transfer of electron from one region of conduction band to another 4. Metal-semiconductor diode, have rectification properties ........A B C D

a. 2 4 3 1

b. 1 3 4 2

c. 2 3 4 1

d. 1 4 3 2 Check Ans

9.An LED made using GaAs emits radiation in a. Visible region

b. Ultraviolet region

c. Infra red region

d. Microwave frequency region Check Ans

10.The light emitting diode (LED) emits light of a particular colour because a. It is fabricated from a fluoroscent material

b. Transition between energy levels of the carriers takes place while crossing the p-n junction

c. Heat generated in the diode is converted into light

d. The band gap of the semi-conductor material used in the fabrication of the diode is equal to the energy hv of the light photon Check Ans

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Labels: analog electronics, Special Electronic Devices

Hall effect

Hall effect
Notes: Click on "Grade Quiz" (at bottom of form) to see how you do!The number of correct answers displayed. Click on "Check" if u want check individually. click on "ans" to know the correct answer. 1.A Hall effect transducer can be used to measure a. Displacement, temperature and magnetic flux

b. Displacement, position and velocity

c. Position, magnetic flux and pressure

d. Displacement, position and magnetic flux Check Ans

2.Assertion (A) : Hall crystal can be used as a multiplier of two signals. Reason (R) : Hall voltage is proportional to the currents or voltages applied in perpendicular directions across the Hall crystal. a. Both A and R are true and R is the correct explanation of A

b. Both A and R are true but R is NOT the correct explanation of A

c. A is true but R is false

d. A is false but R is true Check Ans

3.The Hall constant in a p - Si bar is given by 5 10 cm3/Coulomb. The hole concentration in the bar is given by

a. 1.00 101515/cm3

b. 1.25 1015/cm3

c. 1.50 1015/cm2

d. 1.6 10 /cm

15

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Check Ans

4.In an extrinsic semiconductor, the Hall coefficient RH

a. increases with increase of temperature

b. decreases with increase of temperature

c. is independent of the change of temperature

d. changes with the change of magnetic field Check Ans 5.Which of the following statements relate to the Hall effect? 1. A potential difference is developed across a current-carrying metal strip when the strip is placed in a transverse magnetic field. 2. The Hall effect is very weak in metals but is large in semiconductors. 3. The Hall effect is very weak in semiconductors but is large in metals. 4. it is applied in the measurement of the magnetic field intensity. a. 1, 2 and 3

b. 2 and 4

c. 1, 3 and 4

d. 1, 2 and 4 Check Ans

6.Consider a semiconductor bar having square cross-section. Assume that holes drift in the positive x-direction and a magnetic field is applied perpendicular to the direction in which holes drift. The sample will show a. a negative resistance in positive ydirection

b. a positive voltage in positive ydirection

c. a negative voltage in positive ydirection

d. a magnetic field in positive y-direction Check Ans

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7.A semiconductor specimen of breadth d, width w and carrying current I is placed in a magnetic field B to develop Hall voltage VH in a direction perpendicular to I and B. VH is NOT proportional to a. B

b. I

c. 1/w

d. 1/d Check Ans

8.Assertion (A): The concentration measured by Hall effect does not have much significance if the semiconductor is non-homogeneously doped. Reason (R): The current density is uniform throughout the thickness of the semiconductor. a. Both A and R are individually true and R is the correct explanation of A

b. Both A and R are individually true but R is not the correct explanation of A

c. A is true but R is false

d. A is false but R is true Check Ans

9.Which of the following can be determined by using a Hall crystal? 1. Concentration of holes in a p-type semiconductor. 2. Concentration of electrons in an n-type semiconductor. 3. Temperature of the setup with any type of semiconductor. 4. Diffusion constant and life-time of minority carriers of any type of semiconductor. Select the correct answer using the code given below a. Only 1 and 2

b. 1, 2 and 4

c. Only 3 and 4

d. Only 2 and 4

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Check Ans

10.As per Hall effect, if any specimen carrying a current I is placed in a transverse magnetic field B, then an electric field E is induced in the specimen in the direction a. parallel to I

b. perpendicular to B and parallel to I

c. parallel to I and B

d. perpendicular to both I and B Check Ans

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