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Spring 2000
Problem Solving Exercises 2 Due: 2/24/00 Your homework is due at the beginning of class on the due date above. NO EXCEPTIONS! Pass your answers in on a separate piece of paper(s) that are stapled in the upper left corner. Write your name in the upper right corner using the format: Last name, First name. Solutions must be neat and include all your steps and calculations. MOS VT Calculations: For a CMOS, Al gate process using (001) Si, with Qi=5x1010cm-2q, design VT for the PMOS transistors to equal 1.25V and the VT for the NMOS transistors to be equal to +1.25V. The substrate is n/n+ Si with the Nd of the n epilayer equal to 2x1014cm-3. Hint: The items you need to solve for are the oxide thickness of the gate and the doping concentration of the p-well. Use the diagram below for guidance.
NMOS d=? Na=? n epi (001) Si Nd=2x1014cm-3 d=? PMOS
n+ (001) Si
n+ source/drain p+ source/drain
Spring 2000
Identify the type of impurity that each step removes. 2. You are asked to analyze a conventional Clean Room for particulate contamination. The room, which is initially free of particle contamination (an impossibility), is 40 ft x 40 ft x 10 ft. You are able to exchange the air in the room 4 times/hour. The filter efficiency of the room is 85%. There are two technicians working in the Clean Room moving generating one million particle/minute:
Determine the following: i. The time that the Clean Room remains class 10 ii. The time that the Clean Room remains class 100 iii. The time it takes to first achieve the maximum number of particle in the room.