TK15A60U

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS)

TK15A60U
Switching Regulator Applications
Low drain-source ON-resistance: RDS (ON) = 0.24 (typ.) High forward transfer admittance: Yfs = 8.5 S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth = 3.0~5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm

Absolute Maximum Ratings (Ta = 25C)

Characteristics Drain-source voltage Gate-source voltage DC Drain current (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 600 30 15 30 40 81 15 4 150 -55 to 150 A W mJ A mJ C C Unit V V

Pulse (t = 1 ms) (Note 1)

Drain power dissipation (Tc = 25C) Single pulse avalanche energy (Note 2) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range (Note 3)

1: Gate 2: Drain 3: Source

JEDEC JEITA TOSHIBA

SC-67 2-10U1B

Weight : 1.7 g (typ.)

Note:

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Thermal Characteristics
Characteristics Thermal resistance, channel to case Thermal resistance, channel to ambient Symbol Rth (ch-c) Rth (ch-a) Max 3.125 62.5 Unit 2 C/W C/W

Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: VDD = 90 V, Tch = 25C (initial), L = 0.63 mH, RG = 25, IAR = 15 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.

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Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) Yfs Ciss Crss Coss tr ton tf toff Qg Qgs Qgd VDD 400 V, VGS = 10 V, ID = 15 A Duty 1%, tw = 10 s 10 V VGS 0V 50 ID = 7.5A VOUT VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 30 V, VDS = 0 V VDS = 600 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 10 V, ID = 7.5 A VDS = 10 V, ID = 7.5 A Min 600 3.0 3.0 Typ. 0.24 8.5 950 47 2300 37 80 8 105 17 10 7 Max 1 100 5.0 0.3 pF Unit A A V V S

ns

Switching time
Fall time Turn-OFF time Total gate charge Gate-source charge Gate-drain charge

RL = 40 VDD 300 V

nC

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Continuous drain reverse current (Note 1) Pulse drain reverse current Forward voltage (diode) Reverse recovery time Reverse recovery charge (Note 1) Symbol IDR IDRP VDSF trr Qrr Test Condition IDR = 15 A, VGS = 0 V IDR = 15 A, VGS = 0 V, dIDR/dt = 100 A/s Min Typ. 530 9.0 Max 15 30 -1.7 Unit A A V ns C

Marking

K15A60U

Part No. (or abbreviation code) Lot No. A line indicates Lead (Pb)-Free Finish.

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ID VDS
10 Common source Tc = 25C 10 Pulse test 15 7 8 30 10 15

ID VDS
8.5 Common source Tc = 25C Pulse test 8 18 7.5

6.8

24

(A)

ID

6.5

Drain current

Drain current

ID

(A)
12

6.2 6

7 6.3

VGS = 5.8 V

VGS = 6.2 V

10

20

30

40

50

Drainsource voltage

VDS

(V)

Drainsource voltage

VDS

(V)

ID VGS
30 Common source VDS = 20 V Pulse test 10

VDS VGS
Common source Tc = 25C Pulse test

24

(V)
8

(A)

ID

12

100

Drainsource voltage

18

VDS
6

Drain current

ID = 15A

25

Tc = 55C

7.5 4

0 0

10

12

16

20

Gatesource voltage

VGS

(V)

Gatesource voltage

VGS

(V)

Yfs ID
100 Common source VDS = 10 V Pulse test Tc = 55C 10 100 25 10 Common source Tc = 25C Pulse test

RDS (ON) ID

Drainsource ON-resistance RDS (ON) ()

Forward transfer admittance Yfs (S)

1 VGS = 10 V 15 0.1

0.1 0.1

10

100

0.01 1

10

100

Drain current

ID

(A)

Drain current

ID

(A)

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RDS (ON) Tc
1

IDR VDS
100 Common source Tc = 25C Pulse test

Drainsource ON-resistance RDS (ON) ()

0.8

IDR
0.6 15 0.4 ID = 4 A

(A) Drain reverse current

7.5 10

Common source VGS = 10 V Pulse test

10,15 1 5

0.2

3 1 VGS = 0 V 0.8 1.2

0 80

40

40

80

120

160

200

0.1 0

0.4

Case temperature

Tc

(C)

Drainsource voltage

VDS

(V)

C VDS
10000 5

Vth Tc Vth (V) Gate threshold voltage

(pF)

1000

Ciss

Coss 100

Capacitance

10 Common source VGS = 0 V f = 1 MHz Tc = 25C 1 10 Crss

Common source VDS = 10 V ID = 1 mA Pulse test 40 0 40 80 120 160 200

1 0.1

100

0 80

Drainsource voltage

VDS

(V)

Case temperature

Tc

(C)

PD Tc
50 500

Dynamic input/output characteristics

20 Common source ID = 15 A Tc = 25C Pulse test 16 200V 300 VDD = 100V 12

(W)

(V)

40

400

VDS

PD

VDS

Drain power dissipation

Drainsource voltage

400V

20

200 VGS 100

10

0 0

40

80

120

160

200

0 0

12

18

24

0 30

Case temperature

Tc

(C)

Total gate charge

Qg

(nC)

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Gatesource voltage

30

VGS

(V)

TK15A60U

rth tw
Normalized transient thermal impedance rth (t)/Rth (ch-c)
10

Duty=0.5 0.2

0.1

0.1 0.05 0.02 0.01 Single pulse PDM t T Duty = t/T Rth (ch-c) = 3.125C/W 100 1m 10m 100m 1 10

0.01

0.001 10

Pulse width

tw (s)

Safe operating area

100 100 ID max (Pulse) * ID max (Continuous) 10 100 s *

EAS Tch

EAS (mJ) Avalanche energy

80

(A)

1 ms * 1 DC operation Tc = 25C

Drain current

ID

60

40

0.1 * Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.001 0.1 1 10

20

0.01

VDSS max 100 1000

0 25

50

75

100

125

150

Channel temperature (initial)

Tch (C)

Drainsource voltage

VDS

(V)

15 V 15 V

BVDSS IAR VDD VDS WAVEFORM

TEST CIRCUIT RG = 25 VDD = 90 V, L = 0.63mH

AS =

1 B VDSS L I2 B 2 VDSS VDD

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RESTRICTIONS ON PRODUCT USE

The information contained herein is subject to change without notice.

20070701-EN

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customers own risk. The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.

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