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SUP85N10-10P

Vishay Siliconix

N-Channel 100 V (D-S) MOSFET


FEATURES PRODUCT SUMMARY
VDS (V) 100 RDS(on) () 0.010 at VGS = 10 V ID (A) 85d Qg (Typ.) 77

Halogen-free According to IEC 61249-2-21 Definition TrenchFET Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC

TO-220AB

APPLICATIONS
Industrial

G G D S Top View Ordering Information: SUP85N10-10P-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)


Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Avalanche Current Single Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25 C TA = 25 Cc TC = 25 C TC = 70 C Symbol VDS VGS ID IDM IAS EAS PD TJ, Tstg Limit 100 20 85d 83 240 60 180 227
b

Unit V

mJ W C

3.75 - 55 to 150

THERMAL RESISTANCE RATINGS


Parameter Junction-to-Ambient (PCB Mount) Junction-to-Case (Drain) Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). d. Package limited.
c

Symbol RthJA RthJC

Limit 40 0.55

Unit C/W

Document Number: 64833 S11-2239-Rev. B, 14-Nov-11

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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUP85N10-10P
Vishay Siliconix
SPECIFICATIONS (TJ = 25 C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Charge Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Time Fall Timec
c c

Symbol VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf
b

Test Conditions VDS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 125 C VDS = 100 V, VGS = 0 V, TJ = 150 C VDS 10 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125 C VDS = 15 V, ID = 20 A

Min. 100 2.5

Typ.

Max.

Unit

4.5 250 1 50 250

V nA A A

120 0.0080 0.0146 70 0.0100 0.0185

4660 VGS = 0 V, VDS = 50 V, f = 1 MHz 315 150 77 VDS = 50 V, VGS = 10 V, ID = 75 A f = 1 MHz VDD = 50 V, RL = 0.67 ID 75 A, VGEN = 10 V, Rg = 1 0.25 25 20 1.2 15 12 25 8 2.4 25 20 40 15 ns 120 nC pF

Drain-Source Body Diode Characteristics TC = 25 C Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr

85 240 IF = 5 A, VGS = 0 V IF = 5 A, dI/dt = 100 A/s 0.8 74 6.7 250 1.5 115 10 400

A V ns A nC

Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

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Document Number: 64833 S11-2239-Rev. B, 14-Nov-11

This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
120 VGS = 10 V thru 7 V 100 I D - Drain Current (A) I D - Drain Current (A) 8 10

80

60 VGS = 6 V

4 TC = 25 C 2 TC = 125 C TC = - 55 C 0

40

20

0 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V)

10

VGS - Gate-to-Source Voltage (V)

Output Characteristics
150 0.020

Transfer Characteristics

RDS(on) - On-Resistance ()

g fs - Transconductance (S)

120 TC = - 55 C 90 TC = 25 C 60 TC = 125 C

0.015

0.010 VGS = 10 V

0.005

30

0 0 10 20 30 40 50 ID - Drain Current (A)

0.000 0 20 40 60 80 100 120 ID - Drain Current (A)

Transconductance
6000 Ciss 10

On-Resistance vs. Drain Current

ID = 16 A VGS - Gate-to-Source Voltage (V) 8 VDS = 50 V 6 VDS = 25 V VDS = 75 V 4

5000 C - Capacitance (pF)

4000

3000

2000

1000 Crss 0

Coss

0 20 40 60 80 100 0 20 40 60 80 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)

Capacitance

Gate Charge

Document Number: 64833 S11-2239-Rev. B, 14-Nov-11

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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
2.1 ID = 20 A R DS(on) - On-Resistance () 10 1.7 VGS = 10 V 1.3 100 TJ = 150 C TJ = 25 C

R DS(on) - On-Resistance (Normalized)

0.1

TJ = - 50 C

0.9

0.01

0.5 - 50

- 25

25

50

75

100

125

150

0.001 0.0

0.2

0.4

0.6

0.8

1.0

1.2

TJ - Junction Temperature (C)

VGS - Gate-to-Source Voltage (V)

On-Resistance vs. Junction Temperature


0.05 0.8

Source-Drain Diode Forward Voltage

R DS(on) - On-Resistance ()

0.04 VGS(th) Variance (V)

0.3

0.03

- 0.2 ID = 1 mA - 0.7 ID = 250 A

0.02 TJ = 125 C 0.01 TJ = 25 C 0.00 3 4 5 6 7 8 VGS - Gate-to-Source Voltage (V) 9 10

- 1.2

- 1.7 - 50

- 25

25

50

75

100

125

150

TJ - Temperature (C)

On-Resistance vs. Gate-to-Source Voltage


130 ID = 1 mA 124
100

Threshold Voltage

BVDSS (V)

I DAV (A)

118

TJ = 150 C 10

TJ = 25 C

112

106

100 - 50

- 25

25

50

75

100

125

150

1 10-5

10-4

10-3 t AV (s)

10-2

10-1

TJ - Junction Temperature (C)

Drain Source Breakdown Voltage vs. Junction Temperature

Single Pulse Avalanche Current Capability vs. Time

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Document Number: 64833 S11-2239-Rev. B, 14-Nov-11

This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
1000 Limited by RDS(on)* 100 I D - Drain Current (A) 100 s

1 ms 10 10 ms 100 ms, DC 1

0.1 TC = 25 C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified

Safe Operating Area


300 120

240 I D - Drain Current (A)

100

80

Package Limited

Power (W)

180

60

120

40

60

20

0 0 25 50 75 100 125 150 TC - Case Temperature (C)

0 0 25 50 75 100 125 TC - Case Temperature (C) 150

Power Derating, Junction-to-Case

Current Derating*

* The power dissipation PD is based on TJ(max.) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

Document Number: 64833 S11-2239-Rev. B, 14-Nov-11

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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance

0.2 0.1 0.1 0.05 0.02 Single Pulse

0.01 10 -4

10 -3

10 -2 Square Wave Pulse Duration (s)

10 -1

Normalized Thermal Transient Impedance, Junction-to-Case

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64833.

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Document Number: 64833 S11-2239-Rev. B, 14-Nov-11

This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information
www.vishay.com

Vishay Siliconix

TO-220AB
E A

MILLIMETERS DIM.
F

INCHES MIN. 0.167 0.027 0.047 0.014 0.585 0.395 0.095 0.192 0.045 0.240 0.095 0.526 0.131 0.139 0.102 MAX. 0.183 0.040 0.068 0.024 0.610 0.414 0.105 0.208 0.055 0.255 0.115 0.552 0.150 0.155 0.118

MIN. 4.25 0.69 1.20 0.36 14.85 10.04 2.41 4.88 1.14 6.09 2.41 13.35 3.32 3.54 2.60

MAX. 4.65 1.01 1.73 0.61 15.49 10.51 2.67 5.28 1.40 6.48 2.92 14.02 3.82 3.94 3.00

A b b(1) c D E

P H(1) D Q

e e(1) F H(1)
1
L(1)

J(1) L L(1)
M* b(1)

P Q

ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM Xian and Mingxin actual photo
C

b e J(1) e(1)

Revison: 08-Oct-12

Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice


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Vishay

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customers technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy


Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000

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