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Vishay Siliconix
Halogen-free According to IEC 61249-2-21 Definition TrenchFET Power MOSFET 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
TO-220AB
APPLICATIONS
Industrial
G G D S Top View Ordering Information: SUP85N10-10P-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET
Unit V
mJ W C
3.75 - 55 to 150
Limit 40 0.55
Unit C/W
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP85N10-10P
Vishay Siliconix
SPECIFICATIONS (TJ = 25 C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Charge Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Time Fall Timec
c c
Symbol VDS VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf
b
Test Conditions VDS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 100 V, VGS = 0 V VDS = 100 V, VGS = 0 V, TJ = 125 C VDS = 100 V, VGS = 0 V, TJ = 150 C VDS 10 V, VGS = 10 V VGS = 10 V, ID = 20 A VGS = 10 V, ID = 20 A, TJ = 125 C VDS = 15 V, ID = 20 A
Typ.
Max.
Unit
V nA A A
4660 VGS = 0 V, VDS = 50 V, f = 1 MHz 315 150 77 VDS = 50 V, VGS = 10 V, ID = 75 A f = 1 MHz VDD = 50 V, RL = 0.67 ID 75 A, VGEN = 10 V, Rg = 1 0.25 25 20 1.2 15 12 25 8 2.4 25 20 40 15 ns 120 nC pF
Drain-Source Body Diode Characteristics TC = 25 C Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr
85 240 IF = 5 A, VGS = 0 V IF = 5 A, dI/dt = 100 A/s 0.8 74 6.7 250 1.5 115 10 400
A V ns A nC
Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
120 VGS = 10 V thru 7 V 100 I D - Drain Current (A) I D - Drain Current (A) 8 10
80
60 VGS = 6 V
4 TC = 25 C 2 TC = 125 C TC = - 55 C 0
40
20
10
Output Characteristics
150 0.020
Transfer Characteristics
RDS(on) - On-Resistance ()
g fs - Transconductance (S)
120 TC = - 55 C 90 TC = 25 C 60 TC = 125 C
0.015
0.010 VGS = 10 V
0.005
30
Transconductance
6000 Ciss 10
4000
3000
2000
1000 Crss 0
Coss
Capacitance
Gate Charge
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
2.1 ID = 20 A R DS(on) - On-Resistance () 10 1.7 VGS = 10 V 1.3 100 TJ = 150 C TJ = 25 C
0.1
TJ = - 50 C
0.9
0.01
0.5 - 50
- 25
25
50
75
100
125
150
0.001 0.0
0.2
0.4
0.6
0.8
1.0
1.2
R DS(on) - On-Resistance ()
0.3
0.03
- 1.2
- 1.7 - 50
- 25
25
50
75
100
125
150
TJ - Temperature (C)
Threshold Voltage
BVDSS (V)
I DAV (A)
118
TJ = 150 C 10
TJ = 25 C
112
106
100 - 50
- 25
25
50
75
100
125
150
1 10-5
10-4
10-3 t AV (s)
10-2
10-1
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
1000 Limited by RDS(on)* 100 I D - Drain Current (A) 100 s
1 ms 10 10 ms 100 ms, DC 1
0.1 TC = 25 C Single Pulse 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified
100
80
Package Limited
Power (W)
180
60
120
40
60
20
Current Derating*
* The power dissipation PD is based on TJ(max.) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SUP85N10-10P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance
0.01 10 -4
10 -3
10 -1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?64833.
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This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
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Vishay Siliconix
TO-220AB
E A
MILLIMETERS DIM.
F
INCHES MIN. 0.167 0.027 0.047 0.014 0.585 0.395 0.095 0.192 0.045 0.240 0.095 0.526 0.131 0.139 0.102 MAX. 0.183 0.040 0.068 0.024 0.610 0.414 0.105 0.208 0.055 0.255 0.115 0.552 0.150 0.155 0.118
MIN. 4.25 0.69 1.20 0.36 14.85 10.04 2.41 4.88 1.14 6.09 2.41 13.35 3.32 3.54 2.60
MAX. 4.65 1.01 1.73 0.61 15.49 10.51 2.67 5.28 1.40 6.48 2.92 14.02 3.82 3.94 3.00
A b b(1) c D E
P H(1) D Q
e e(1) F H(1)
1
L(1)
J(1) L L(1)
M* b(1)
P Q
ECN: X12-0208-Rev. N, 08-Oct-12 DWG: 5471 Notes * M = 1.32 mm to 1.62 mm (dimension including protrusion) Heatsink hole for HVM Xian and Mingxin actual photo
C
b e J(1) e(1)
Revison: 08-Oct-12
Document Number: 71195 1 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customers responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customers technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 02-Oct-12