IEES-6 18 September 2012, Cali, Valle del Cauca, Colombia Paper No.

TRANSISTOR BJT COMMON-BASE AND COMMON-COLLECTOR CONFIGURATION

Santiago Blandn.
Universidad Autnoma de Occidente.

santiago.bldn@gmail.com.

ABSTRACT This document talks about two basic configurations for work with transistors of common-base and the common-collector configuration, the characteristics of both configurations and the way to describe circuits using these configurations. INTRODUCTION For applications with transistors is necessary to know the different configurations of work, basically working with three configurations are known as common emitter, common base and common collector, then the common term denoting the element that relates both to the output to the input . RESULT AND DISCUSSION Common-base configuration The common-base configuration is called of this manner because the base is common so input and output but the input is applied to the emitter and output is applied to the collector. .

In active region, the circuit of input conformed by and the diode (Emitter, base). The voltage source polarized directly the diode for this reason the potential in the diode hast to higher 0.7 V to operate the diode. The circuit of output conformed by and the diode (Base, collector). The source polarized in reverse the diode.

Fig 2. Output for a common-base configuration. In the case that the is zero, the is the True and this current is called (reverse saturation current in collector), is smaller than , while the transistor working with midlow power is approximately zero. Based on the figure 2, and increase both approximately equal then obtains the equation 1.

Fig 1. Circuit common-base configuration for PNP transistor.

In the cutoff region the two unions (baseemitter, collector-base) are polarized reversed or the union base-emitter the voltage is less a 0.7V.

The current gain related the output in function of the input, equation 2.

The gain in AC is determined for the variation of the current of output and the variation of current of input, equation 3.

The operation in the common-collector is similar to the common-emitter, also apply the equation 1, but the gain current its based in the current emitter (output) and the current base (input) but the concept of gain current is the same, equation 5.

The gain current of collector-base is related by the equation 6. I both case this current gain less than 1, many transistor and datasheets only the gain current characteristics in terms of , to find in this case when given , we using the following expression for a common-base configuration, equation 4.

The output of common-collector configuration is shown in the figure 4.

Common-collector configuration This Configuration is used for impedancematching, in this configuration is that the input impedance has higher impedance and the output impedance has lower, this doesnt occur in the common-emitter and common-base configuration. In the common-collector circuits the input is applied to the base and the output to the emitter therefore the collector is common both input and output.

Fig 4. Output configuration. CONCLUCION

for

common-collector

Output signal of Common-collector and common-base configuration are in phase with de input signal. The characteristic of common-collector is very similar than the common-emitter. The input in the common-collector configuration has higher impedance otherwise to the common-base configuration has smaller impedance. The temperature is an important factor because in the base-collector specifically the values change operation overly. REFERENCE

Fig 3. Circuit common-collector configuration for PNP transistor. In this configuration the current gain is higher than the other configurations but the power gain is lower than the other configurations.

1. BOYLESTAD, Robert L. NASHELSKY, Louis. Electronic devices and circuit theory. Ninth edition. chapter Three Bipolar junction Transistors. Pearson Education International. 2. Thomas L. Floyd, Electronic Devices conventional current version, seventh edition. Chapter four Bipolar junction transistor (BJT) Pearson Education International. 3. Malvino, Albert. Bates, David J. Electronic principles. Seventh edition, Chapter eleven CC and CB amplifiers. Mc Grawll hill. 4. Transistor Configuration, Integrated publishing. http://www.tpub.com/neets/book7/25f.htm.