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University of Connecticut
56
Diode Logic
VA VB OR GATE VOUT AND GATE VA VB VCC
VOUT
n n
Diode Logic suffers from voltage degradation from one stage to the next. Diode Logic only permits the OR and AND functions. Diode Logic is used extensively but not in integrated circuits!
University of Connecticut
57
VOUT
n n n
VCC 0.7V = RL RH + RL
Level shifting eliminates the voltage degradation from the input to the ouput. However, the logic swing falls short of rail-to-rail, and the inverting function still is not available without using a transistor!
58
University of Connecticut
n n n n
If any input goes high, the transistor saturates and VOUT goes low. If all inputs are low, the transistor cuts off and VOUT goes high. This is a NOR gate. Current Hogging is a problem because the bipolar transistors can not be matched precisely.
59
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RC VOUT Q1
n n n n
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VA VB VC
x Q1
RD
VOUT
n n n
If all inputs are high, Vx = 2.2V and the transistor is saturated. If any input goes low (0.2V), Vx=0.9V, and the transistor cuts off. The added resistor RD provides a discharge path for stored base charge in the BJT, to provide a reasonable tPLH.
61
University of Connecticut
DTL VTC
VCC VOUT
RB RC
5 4
VA VB VC
x Q1
RD
VOUT
3 2 1 0 0 1 2 3 4 5 VIN
VOH = VOL =
n
VIL = VIH =
The noise margins are more symmetric than in the RTL case.
62
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VCC
RC
PL =
VOUT Q1
VA VB VC
RD
PH =
n
P=
63
University of Connecticut
DTL Fanout
RB=3.4k RC=4.8k RD=1.6k F=50
VCC
RB RC
I CS =
VA VB VC
x Q1
RD
VOUT
I BS = I CS = N max =
64
University of Connecticut
VCC
6k
VA VB VC
Q1 Q2
5k
VOUT
One of the series diodes is replaced by Q1, providing more base drive for Q2 and improving the fanout (Nmax = 45). Does Q1 saturate? 930 DTL Characteristics 5.0V / 0.2V VOH / VOL 1.5V / 1.4V VIH / VIL 45 Fanout 10mW Dissipation 75ns tP
65
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VCC
6k
ts =
Q1 Q2
5k
VA VB VC
VOUT
tr
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67
Why TTL?
VA VB VC
n n
DTL
The DTL input uses a number of diodes which take up considerable chip area. In TTL, a single multi-emitter BJT replaces the input diodes, resulting in a more area-efficient design. DTL was ousted by faster TTL gates by 1974.
VA VB VC
TTL
n
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68
VA VB VC
QI
Multi-emitter transistor. Forward-biased emitter base junctions override reverse-biased junctions in determining the base and collector currents.
University of Connecticut 69
VA VB VC
QI
QS
The depletion capacitance of the QI EB junction must discharge; Base charge must be removed from the saturated QS; Ditto for QO; and The capactive load must be charged to VCC.
Multi-emitter transistor. Forward-biased emitter base junctions override reverse-biased junctions in determining the base and collector currents.
University of Connecticut 70
VA VB VC
QI
QS
The time required to discharge the QI depletion layers is << 1ns. The time required to extract the QS base charge is also << 1ns: QI becomes forward active; |IBR| becomes large for QS
Removal of base charge from QO is similar to the DTL case. With RD = 1 k, ts = 10ns (these are typical values for 7400 series TTL).
71
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VOUT
VA VB VC
QI
QS QO RD
VOUT CL
2 1 0 0 100 200
t (ns)
300
Charging of the capacitive load can be slow with passive pullup. e.g., with a 5k pull-up resistor and a 15 pF load (ten TTL gates) RC = 75 ns and tr = 2.3RC = 173 ns!
72
University of Connecticut
In the previous example, the dominant switching speed limitation was the charging of capacitive loads through the pullup resistor. A small pullup resistance will improve the switching speed but will also increase the power and reduce the fanout.
VCC RC QP VOUT QO RD
n
When the output is low, QP is cutoff, minimizing the power and maximizing the fanout; when the output goes high, QP becomes forward active to provide maximum drive current for a quick rise time.
73
University of Connecticut
With a high output, n QS is cutoff n QP is forward active With a low output, n QS is saturated n QP should be cutoff
VCC=5V RB RC QP VOUT QO RD
The low output case is unsatisfactory with this circuit: VBP = VBEP = VEP =
VA VB VC
QI
QS
VA VB VC
QI
QS QO RD
During turn-off, QS switches off before QO. QP begins to conduct when VCS = VCESO+VD+VBEAP = 1.6V Initially,
DL VOUT
I BP =
QP
VA VB VC
QI
QS QO
1k
DL VOUT
The anti-ringing diodes at the input are normally cut off. During switching transients, they turn on if an input goes more negative than -0.7V.
76
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VCC=5V
RC 1.6k 130
QP
VIN
QI
QS QO
1k
DL VOUT
n
(the drop in the base resistor is small) First Breakpoint. QS turns on. VIL = (at the edge of conduction, IC=0)
77
University of Connecticut
VCC=5V
RC 1.6k 130
QP
VIN
QI
QS QO
1k
DL VOUT
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78
VCC=5V
RC 1.6k 130
VOUT
5 4 3
QP
QI
QS QO
1k
DL VOUT
2 1 0
VIN
1 2 3 4 5
VNML =
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VNMH =
79
80
0.08V 1.2 mA 0.8 mA
For the saturated BJT with IB = 2.4 mA, the output impedance is
60
21 mA
ROL =
The very low output impedance means that noise currents are translated into tiny noise voltages. Thus only a small noise margin is neccesary.
80
40
IB = 0.4mA
20
Characteristics for a 0 Texas Instruments junction isolated digital npn BJTat 25 oC.
0.1
0.2
0.3
0.4
0.5
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IIH
I BI =
QP VA VB QI QS QO
1k
n
DL VOUT
I IH =
IIL (QI is saturated)
F =70 R = 0.1
I IL =
University of Connecticut 81
I CI = I CS = I BO =
n
QP VA VB QI QS QO
1k
DL VOUT
F =70 R = 0.1
To keep QO saturated,
N max =
PH =
QP VA VB QI QS QO
1k
DL VOUT
PL =
F =70 R = 0.1 N = 10
P=
University of Connecticut 83
University of Connecticut
84
Darlington Pullup
VCC=5V
900
RC
RCP QP
50
QP2
3.5k
REP
VOUT
QP2 is added, forming a Darlington pair with QP. The EB junction of QP2 introduces a 0.7V level shift, so DL can be eliminated. QP2 can not saturate, so Schottky clamping is not neccessary. REP is needed to provide a discharge path for QP2 base charge.
The Darlington emitter follower provides a very low output impedance, approaching RC / 2. This greatly reduces the rise time.
University of Connecticut
85
Squaring Circuit
VOUT
QS QO
500
VOUT
RCD
VIL BP2
VOH 4
3 2
7400 74S00
RBD
250
QD
VOL
1 0 1
BP3 VIH
2 3 4 5
VIN
n n n n
There is no path for QS emitter current until QD and QO turn on. QS and QO begin to conduct simultaneously. BP1 is eliminated from the VTC; in other words, the VTC is squared. VIL is increased, improving the low noise margin.
86
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VCC=5V
RCP QP
Features:
n n n n n
2.8k
900
50
QP2
VA VB
QI
QS REP
3.5k
Schottky clamping Schottky anti-ringing diodes Darlington pullup circuit Squaring circuit Scaled resistors
VOUT
QO
500
RBD
Performance:
n n n
250
RCD
QD
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