2SB649, 2SB649A

Silicon PNP Epitaxial

ADE-208-856 (Z) 1st. Edition Sep. 2000 Application

Low frequency power amplifier complementary pair with 2SD669/A

Outline
TO-126 MOD

1. Emitter 2. Collector 3. Base

2SB649, 2SB649A
Absolute Maximum Ratings (Ta = 25C)
Ratings Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25C Tj Tstg
1

2SB649 180 120 5 1.5 3 1 20 150 55 to +150

2SB649A 180 160 5 1.5 3 1 20 150 55 to +150

Unit V V V A A W W C C

2SB649, 2SB649A
Electrical Characteristics (Ta = 25C)
2SB649 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CBO V(BR)CEO V(BR)EBO I CBO
1

2SB649A Max 10 320 1 1.5 Min Typ Max 10 200 1 1.5 V V MHz pF Unit V V V A Test conditions I C = 1 mA, IE = 0 I C = 10 mA, RBE = I E = 1 mA, IC = 0 VCB = 160 V, IE = 0 VCE = 5 V, I C = 150 mA VCE = 5 V, I C = 500 mA*2 I C = 500 mA, I B = 50 mA VCE = 5 V, I C = 150 mA VCE = 5 V, I C = 150 mA VCB = 10 V, IE = 0, f = 1 MHz

Min

Typ

180 120 5 60 30 140 27

180 160 5 60 30 140 27

DC current transfer ratio hFE1* hFE2 Collector to emitter saturation voltage

VCE(sat)

Base to emitter voltage VBE Gain bandwidth product f T Collector output capacitance Cob

Notes: 1. The 2SB649 and 2SB649A are grouped by h FE1 as follows. 2. Pulse test B 2SB649 2SB649A 60 to 120 60 to 120 C 100 to 200 100 to 200 D 160 to 320

2SB649, 2SB649A
Maximum Collector Dissipation Curve 30 Collector power dissipation PC (W) 3 ICmax Collector current IC (A) 1.0 (40 V, 0.5 A) 0.3 0.1 DC Operation (TC = 25C) (13.3 V, 1.5 A)

Area of Safe Operation

20

10

0.03 2SB649 0.01 1

(120 V, 0.038 A) (160 V, 0.02 A) 2SB649A

50 100 Case temperature TC (C)

150

3 10 30 100 300 Collector to emitter voltage VCE (V)

Typical Output Characteristics 1.0

.5 5

Typical Transfer Characteristics 500 VCE = 5 V Collector current IC (mA) 100

Collector current IC (A)

0.8

Ta = 75C
0

0.6

.0 54 .5 .0 4 .5 3 0 3. 2.5 2.0

TC = 25C

0.4

1.5

1.0

10

0.2

0.5 mA

IB = 0 0 30 50 10 20 40 Collector to emitter voltage VCE (V)

1 0.2 0.4 0.6 0.8 1.0 Base to emitter voltage VBE (V)

25 25

PC = 20 W

2SB649, 2SB649A
DC Current Transfer Ratio vs. Collector Current VCE = 5V
Ta = 75C
25C

Collector to Emitter Saturation Voltage vs. Collector Current Collector to emitter saturation voltage VCE(sat) (V) 1.2 IC = 10 IB 1.0 0.8 0.6 0.4 0.2 0 1

350 DC current transfer ratio hFE 350 250 200 150 100 50

25C

Ta
100 10 Collector current IC (mA) VCE = 5 V 80 40 0 10

=7
25 25 1,000 Gain Bandwidth Product vs. Collector Current 100 300 30 Collector current IC (mA)

0 1

10 100 1,000 Collector current IC (mA)

Base to Emitter Saturation Voltage vs. Collector Current 1.2 Base to emitter saturation voltage VBE(sat) (V) 1.0 0.8 0.6 0.4 0.2 0 1
Ta = 25C

240 Gain bandwidth product fT (MHz) IC = 10 IB 200 160 120

25 75

5C
1,000

10 100 Collector current IC (mA)

1,000

2SB649, 2SB649A
Collector Output Capacitance vs. Collector to Base Voltage Collector output capacitance Cob (pF) 200 100 50 f = 1 MHz IE = 0

20 10 5

2 1

3 10 30 100 Collector to base voltage VCB (V)

2SB649, 2SB649A
Package Dimensions
Unit: mm
8.0 0.5
0
12

3.1 +0.15 0.1 3.7 0.7 11.0 0.5

2.7 0.4

12

2.3 0.3

120

1.1 15.6 0.5 0.8 2.29 0.5 2.29 0.5 0.55 1.2

Hitachi Code JEDEC EIAJ Mass (reference value)

TO-126 Mod 0.67 g

2SB649, 2SB649A
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachis or any third partys patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third partys rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachis sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachis sales office for any questions regarding this document or Hitachi semiconductor products.

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Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.

Colophon 2.0

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