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ADVANCE TECHNICAL INFORMATION

MegaMOSTMFET
N-Channel Enhancement Mode

IXTC 75N10

VDSS = 100 V = 72 A ID25 RDS(on) = 20 m

Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg Md Weight

Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C

Maximum Ratings 100 100 20 30 72 300 230 -55 ... +150 150 -55 ... +150 V V V V A A W C C C g C

ISOPLUS220TM

Isolated back surface*

G = Gate S = Source Features


z z z z

D = Drain

Mounting torque

1.13/10 Nm/lb.in. 2 300

Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s

International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times

Applications
z

z z z

Switch-mode and resonant-mode power supplies Motor controls Uninterruptible Power Supplies (UPS) DC choppers

Symbol

Test Conditions

Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 100 2 4 100 TJ = 25C TJ = 125C 200 1 0.020 V V nA A mA

Advantages
z

VDSS VGS(th) IGSS IDSS RDS(on)

V GS = 0 V, ID = 250 A V DS = VGS, ID = 250 A V GS = 20 VDC, VDS = 0 V DS = 0.8 VDSS VGS = 0 V

z z

Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) Space savings High power density

V GS = 10 V, ID = IT Pulse test, t 300 s, duty cycle d 2 %

See IXTH75N10 data sheet for characteristic curves

2003 IXYS All rights reserved

DS98881A(7/03)

IXTC 75N10
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 25 30 4500 VGS = 0 V, VDS = 25 V, f = 1 MHz 1300 550 40 VGS = 10 V, VDS = 0.5 VDSS, ID = IT RG = 2 , (External) 60 30 60 110 60 S pF pF pF ns ns ns ns nC nC nC K/W K/W ISOPLUS220 Outline

gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK

V DS = 10 V; ID = IT, pulse test

100 140

180 260 VGS = 10 V, VDS = 0.5 VDSS, ID = IT 30 90 70 160 0.54 0.30

Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions V GS = 0 V

Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 75 300 1.75 300 A A V ns

Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100 V

Note: 1. IT = 37.5A

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343