FDS8958A

April 2008

FDS8958A
Dual N & P-Channel PowerTrench MOSFET
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

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Features
Q1: N-Channel RDS(on) = 0.028 @ VGS = 10V RDS(on) = 0.040 @ VGS = 4.5V Q2: P-Channel RDS(on) = 0.052 @ VGS = -10V RDS(on) = 0.080 @ VGS = -4.5V Fast switching speed High power and handling capability in a widely used surface mount package -5A, -30V 7.0A, 30V

D1 D

D1 D

DD2 D2 D

5 6
G2 S2 G

Q2

4 3

SO-8
Pin 1 SO-8

7 8

Q1

2 1

G1 S1 S

Absolute Maximum Ratings

Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous

TA = 25C unless otherwise noted

Parameter

Q1
30
(Note 1a)

Q2
30 20 -5 -20 2 1.6 0.9 13 -55 to +150

Units
V V A W mJ C

20 7 20 2 1.6 0.9 54

- Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Single Pulse Avalanche Energy

(Note 1a) (Note 1c)

EAS TJ, TSTG

(Note 3)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC

Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case

(Note 1a) (Note 1)

78 40

C/W C/W

Package Marking and Ordering Information

Device Marking Device Reel Size

Tape width

Quantity

FDS8958A
2008 Fairchild Semiconductor Corporation

FDS8958A

13

12mm

2500 units
FDS8958A Rev F3 (W)

FDS8958A

Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on)

TA = 25C unless otherwise noted

Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward

Test Conditions
VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 0 V

Type Min Typ Max Units

Q1 Q2 Q1 Q2 Q1 Q2 All All Q1 Q2 Q1 Q2 Q1 1 -1 1.9 -1.7 -4.5 4.5 19 27 24 42 57 65 20 -20 25 10 575 528 145 132 65 70 2.1 6.0 30 -30 25 -23 1 -1 100 -100 3 -3 V mV/C A nA nA V mV/C 28 42 40 52 78 80 A S m

Off Characteristics

Gate-Body Leakage, Reverse VGS = -20 V,

(Note 2)

On Characteristics

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance

ID(on) gFS

On-State Drain Current Forward Transconductance

VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ = 125C ID = 6 A VGS = 4.5 V, VGS = -10 V, ID = -5 A VGS = -10 V, ID = -5 A, TJ = 125C VGS = -4.5 V, ID = -4 A VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 5 V, ID = 7 A ID =-5 A VDS = -5 V, Q1 VDS = 15 V, VGS = 0 V, f = 1.0 MHz

Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2

Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance pF pF pF

Q2 Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz VGS = 15 mV, f = 1.0 MHz

Gate Resistance

FDS8958A Rev F3 (W)

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Electrical Characteristics
Symbol Parameter

(continued)

TA = 25C unless otherwise noted

Test Conditions
(Note 2)

Type Min

Typ

Max Units

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge

Q1 VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Q2 VDD = -15 V, ID = -1 A, VGS = -10V, RGEN = 6 Q1 VDS = 15 V, ID = 7 A, VGS = 10 V Q2 VDS = -15 V, ID = -5 A,VGS = -10 V

Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2

8 7 5 13 23 14 3 9 11.4 9.6 1.7 2.2 2.1 1.7

16 14 10 24 37 25 6 17 16 13

ns ns ns ns nC nC nC

DrainSource Diode Characteristics and Maximum Ratings

IS ISM VSD trr Qrr
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user' s board design.

Maximum Continuous Drain-Source Diode Forward Current Maximum Plused Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A Q1 IF = 7 A, diF/dt = 100 A/s Q2 IF = -5 A, diF/dt = 100 A/s
(Note 2) (Note 2) (Note 2)

0.75 -0.88 19 19 9 6

1.3 -1.3 20 -20 1.2 -1.2

A A V nS nC

a) 78/W when mounted on a 0.5 in2 pad of 2 oz copper

b) 125/W when 2 mounted on a .02 in pad of 2 oz copper

c) 135/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Starting TJ = 25C, L = 3mH, IAS = 6A, VDD = 30V, VGS = 10V (Q1). Starting TJ = 25C, L = 3mH, IAS = 3A, VDD = 30V, VGS = 10V (Q2).

FDS8958A Rev F3 (W)

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Typical Characteristics: Q1 (N-Channel)

20

16 ID, DRAIN CURRENT (A)

RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

VGS = 10.0V

2.2
4.0V 3.5V

6.0V
12

1.8

4.5V

VGS = 3.5V

1.4

4.0 4.5V 5.0 6.0V 10.0V

3.0V
4

0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2

0.6 0 4 8 12 ID, DRAIN CURRENT (A) 16 20

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

0.08

1.6

RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

1.4

RDS(ON), ON-RESISTANCE (OHM)

ID = 7A VGS = 10.0V

0.07 0.06 0.05 0.04 0.03 TA = 25oC 0.02 0.01 TA = 125oC

ID = 3.5A

1.2

0.8

0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150

4 6 8 VGS, GATE TO SOURCE VOLTAGE (V)

10

Figure 3. On-Resistance Variation with Temperature.

20 VDS = 5V

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

100 VGS = 0V

IS, REVERSE DRAIN CURRENT (A)

16

10 1 0.1 0.01 0.001 TA = 125oC

ID, DRAIN CURRENT (A)

12

TA = 125oC

-55oC 25oC

25oC -55oC

0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4

0.0001 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

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Typical Characteristics: Q1 (N-Channel)

10

800 ID = 7A VDS = 10V 20V 600 15V f = 1MHz VGS = 0 V

VGS, GATE-SOURCE VOLTAGE (V)

CAPACITANCE (pF)

Ciss
400

Coss
200

Crss
0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 12 0 0 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20

Figure 7. Gate Charge Characteristics.

100
10

Figure 8. Capacitance Characteristics.

ID, DRAIN CURRENT (A)

10 100ms

1ms 10ms 1s 10s DC VGS = 10V SINGLE PULSE RJA = 135oC/W TA = 25oC

IAS, AVALANCHE CURRENT (A)

RDS(ON) LIMIT

100s

Tj=25

0.1

Tj=125

0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100

1 0.01

0.1

1 tAV, TIME IN AVALANCHE (mS)

10

100

Figure 9. Maximum Safe Operating Area.

Figure 10. Unclamped Inductive Switching Capability Figure

50 SINGLE PULSE R J A = 135 C/W C TA = 25

P(pk), PEAK TRANSIENT POWER (W)

40

30

20

10

0 0.001

0.01

0.1

1 t 1, TIME (sec)

10

100

1000

Figure 11. Single Pulse Maximum Power Dissipation.

FDS8958A Rev F3 (W)

FDS8958A

Typical Characteristics: Q2 (P-Channel)

30 -5.0V -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V -ID, DRAIN CURRENT (A) -6.0V

2 1.8 1.6 -4.5V 1.4 1.2 1 0.8 0 1 2 3 4 5 6 0 6 12 18 24 30 -VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) -5.0V -6.0V -7.0V -8.0V -10V

VGS=-4.0V

20

-4.0V 10

-3.5V -3.0V

Figure 12. On-Region Characteristics.

Figure 13. On-Resistance Variation with Drain Current and Gate Voltage.
0.25 RDS(ON), ON-RESISTANCE (OHM)

1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE

ID = -5A VGS = -10V

ID = -2.5A 0.2

1.4

1.2

0.15 TA = 125oC 0.1 TA = 25oC 0.05

0.8

0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)

0 2 4 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 14. On-Resistance Variation with Temperature.

15
-IS, REVERSE DRAIN CURRENT (A)

Figure 15. On-Resistance Variation with Gate-to-Source Voltage.

100

VDS = -5V -ID, DRAIN CURRENT (A) 12

TA = -55oC 125oC

25oC

10 1 0.1 0.01 0.001 0.0001 0

VGS =0V TA = 125oC 25oC -55oC

0 1 1.5 2 2.5 3 3.5 4 4.5 -VGS, GATE TO SOURCE VOLTAGE (V)

0.2

0.4

0.6

0.8

1.2

1.4

-VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 16. Transfer Characteristics.

Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature.

FDS8958A Rev F3 (W)

FDS8958A

Typical Characteristics: Q2 (P-Channel)

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1
D = 0.5 0.2

0.1

0.1 0.05 0.02 0.01 SINGLE PULSE

R JA (t) = r(t) * R A R J A = 135 C/W

P(pk) P(pk) t t1 t 2 t2

0.01

T J - T A = P * R J A(t) Duty Cycle, D = t1 / t 2

0.001 0.0001

0.001

0.01

0.1 t1, TIME (sec)

10

100

1000

Figure 23. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.

FDS8958A Rev F3 (W)

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TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic EcoSPARK EfficentMax EZSWITCH *

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* EZSWITCH and FlashWriter are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDS8958A Rev F3 (W)

Preliminary

First Production

No Identification Needed Obsolete

Full Production Not In Production