GBT

High speed DuoPack: GBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel diode
KP20N60H3
600V high speed switching series third generation
Datasheet
ndustrial & Multimarket
2
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
High speed GBT in Trench and Fieldstop technology
Features:
TRENCHSTOP
TM
technology offering
very low VCEsat
low EM
maximum junction temperature 175C
qualified according to JEDEC for target applications
Pb-free lead plating; RoHS compliant
complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
AppIications:
uninterruptible power supplies
welding converters
converters with high switching frequency
G
C
E
Key Performance and Package Parameters
Type Type Type Type V VV Vj j j j V VV Vj,,,, j,,,, j,,,, j,,,, T TT T,=25C ,=25C ,=25C ,=25C T TT T,,,, ,,,, ,,,, ,,,, Marking Marking Marking Marking Package Package Package Package
KP20N60H3 600V 20A 1.95V 175C K20H603 PG-TO220-3
3
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
TabIe of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
4
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
Maximum ratings
Parameter SymboI VaIue Unit
Collector-emitter voltage Vj 600 V
DC collector current, limited by T,,,,
T = 25C
T = 100C
40.0
20.0
A
Pulsed collector current, t limited by T,,,, ,., 80.0 A
Turn off safe operating area Vj ~ 600V, T, ~ 175C - 80.0 A
Diode forward current, limited by T,,,,
T = 25C
T = 100C
= 20.0
10.0
A
Diode pulsed current, t limited by T,,,, =,., 80.0 A
Gate-emitter voltage Vj 20 V
Short circuit withstand time
Vj = 15.0V, V ~ 400V
Allowed number of short circuits < 1000
Time between short circuits: < 1.0s
T, = 150C
tz
5
s
Power dissipation T = 25C
Power dissipation T = 100C
P,,,
170.0
85.0
W
Operating junction temperature T, -40...+175 C
Storage temperature T,, -55...+150 C
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s 260
C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M 0.6 Nm
ThermaI Resistance
Parameter SymboI Conditions Max. VaIue Unit
Characteristic
GBT thermal resistance,
junction - case
R,-;-, 0.88 K/W
Diode thermal resistance,
junction - case
R,-;-, 1.89 K/W
Thermal resistance
junction - ambient
R,-;-, 62 K/W
5
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at T TT T, = 25C, unless otherwise specified , = 25C, unless otherwise specified , = 25C, unless otherwise specified , = 25C, unless otherwise specified
VaIue
min. typ. max.
Parameter SymboI Conditions Unit
Static Characteristic
Collector-emitter breakdown voltage V;pjz Vj = 0V, = 2.00mA 600 - - V
Collector-emitter saturation voltage Vj,,,
Vj = 15.0V, = 20.0A
T, = 25C
T, = 125C
T, = 175C
-
-
-
1.95
2.30
2.50
2.40
-
-
V
Diode forward voltage V=
Vj = 0V, = = 10.0A
T, = 25C
T, = 125C
T, = 175C
-
-
-
1.65
1.67
1.65
2.05
-
V
Gate-emitter threshold voltage Vj;,- = 0.29mA, Vj = Vj 4.1 5.1 5.7 V
Zero gate voltage collector current jz
Vj = 600V, Vj = 0V
T, = 25C
T, = 175C
-
-
-
-
40.0
1000.0
A
Gate-emitter leakage current jz Vj = 0V, Vj = 20V - - 100 nA
Transconductance g, Vj = 20V, = 20.0A - 10.9 - S
Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at Electrical Characteristic, at T TT T, = 25C, unless otherwise specified , = 25C, unless otherwise specified , = 25C, unless otherwise specified , = 25C, unless otherwise specified
VaIue
min. typ. max.
Parameter SymboI Conditions Unit
Dynamic Characteristic
nput capacitance C,,, - 1100 -
Output capacitance C,,, - 70 -
Reverse transfer capacitance C,,, - 32 -
Vj = 25V, Vj = 0V, f = 1MHz pF
Gate charge Q
V = 480V, = 20.0A,
Vj = 15V
- 120.0 - nC
nternal emitter inductance
measured 5mm (0.197 in.) from case
Lj - 7.0 - nH
Short circuit collector current
Max. 1000 short circuits
Time between short circuits: < 1.0s
;z
Vj = 15.0V, V ~ 400V,
tz ~ 5s
T, = 150C
-
120
- A
Switching Characteristic, nductive Load, at Switching Characteristic, nductive Load, at Switching Characteristic, nductive Load, at Switching Characteristic, nductive Load, at T TT T, = 25C , = 25C , = 25C , = 25C
VaIue
min. typ. max.
Parameter SymboI Conditions Unit
IGBT Characteristic
Turn-on delay time t;,, - 16 - ns
Rise time t, - 20 - ns
Turn-off delay time t;, - 194 - ns
Fall time t - 11 - ns
Turn-on energy E,, - 0.45 - mJ
Turn-off energy E, - 0.24 - mJ
Total switching energy E,, - 0.69 - mJ
T, = 25C,
V = 400V, = 20.0A,
Vj = 0.0/15.0V,
r = 14.6D, L, = 75nH,
C, = 30pF
L,, C, from Fig. E
Energy losses include "tail and
diode reverse recovery.
6
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
Diode reverse recovery time t,, - 112 - ns
Diode reverse recovery charge Q,, - 0.39 - C
Diode peak reverse recovery current ,,, - 11.0 - A
Diode peak rate of fall of reverse
recovery current during t,
di,,/dt - -750 - A/s
T, = 25C,
V = 400V,
= = 10.0A,
di=/dt = 1000A/s
Switching Characteristic, nductive Load, at Switching Characteristic, nductive Load, at Switching Characteristic, nductive Load, at Switching Characteristic, nductive Load, at T TT T, = 175C , = 175C , = 175C , = 175C
VaIue
min. typ. max.
Parameter SymboI Conditions Unit
IGBT Characteristic
Turn-on delay time t;,, - 16 - ns
Rise time t, - 15 - ns
Turn-off delay time t;, - 227 - ns
Fall time t - 14 - ns
Turn-on energy E,, - 0.60 - mJ
Turn-off energy E, - 0.36 - mJ
Total switching energy E,, - 0.96 - mJ
T, = 175C,
V = 400V, = 20.0A,
Vj = 0.0/15.0V,
r = 14.6D, L, = 75nH,
C, = 30pF
L,, C, from Fig. E
Energy losses include "tail and
diode reverse recovery.
Diode reverse recovery time t,, - 191 - ns
Diode reverse recovery charge Q,, - 0.91 - C
Diode peak reverse recovery current ,,, - 14.2 - A
Diode peak rate of fall of reverse
recovery current during t,
di,,/dt - -500 - A/s
T, = 175C,
V = 400V,
= = 10.0A,
di=/dt = 1000A/s
7
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
Figure 1. Figure 1. Figure 1. Figure 1. Collector current as a function of switching Collector current as a function of switching Collector current as a function of switching Collector current as a function of switching
frequency frequency frequency frequency
(T~175C, D=0.5, Vj=400V, Vj=15/0V,
R=14,6D)
f, SWTCHNG FREQUENCY [kHz]

,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

[
A
]
1 10 100 1000
0
10
20
30
40
50
60
T=80
T=110
T=80
T=110
Figure 2. Figure 2. Figure 2. Figure 2. Forward bias safe operating area Forward bias safe operating area Forward bias safe operating area Forward bias safe operating area
(D=0, T=25C, T~175C; Vj=15V)
Vj, COLLECTOR-EMTTER VOLTAGE [V]

,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

[
A
]
1 10 100 1000
0.1
1
10
100
t=1s
10s
50s
100s
200s
500s
DC
Figure 3. Figure 3. Figure 3. Figure 3. Power dissipation as a function of case Power dissipation as a function of case Power dissipation as a function of case Power dissipation as a function of case
temperature temperature temperature temperature
(T~175C)
T, CASE TEMPERATURE [C]
P
,
,
,
,

P
O
W
E
R

D

S
S

P
A
T

O
N

[
W
]
25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
180
Figure 4. Figure 4. Figure 4. Figure 4. Collector current as a function of case Collector current as a function of case Collector current as a function of case Collector current as a function of case
temperature temperature temperature temperature
(Vj<15V, T~175C)
T, CASE TEMPERATURE [C]

,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

[
A
]
25 50 75 100 125 150 175
0
5
10
15
20
25
30
35
40
8
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
Figure 5. Figure 5. Figure 5. Figure 5. Typical output characteristic Typical output characteristic Typical output characteristic Typical output characteristic
(T=25C)
Vj, COLLECTOR-EMTTER VOLTAGE [V]

,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

[
A
]
0 1 2 3 4 5 6
0
10
20
30
40
50
60
70
80
Vj=20V
17V
15V
13V
11V
9V
7V
5V
Figure 6. Figure 6. Figure 6. Figure 6. Typical output characteristic Typical output characteristic Typical output characteristic Typical output characteristic
(T=175C)
Vj, COLLECTOR-EMTTER VOLTAGE [V]

,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

[
A
]
0 1 2 3 4 5 6 7 8
0
10
20
30
40
50
60
70
80
Vj=20V
17V
15V
13V
11V
9V
7V
5V
Figure 7. Figure 7. Figure 7. Figure 7. Typical transfer characteristic Typical transfer characteristic Typical transfer characteristic Typical transfer characteristic
(Vj=20V)
Vj, GATE-EMTTER VOLTAGE [V]

,

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

[
A
]
5 6 7 8 9 10 11 12
0
10
20
30
40
50
60
70
T=25C
T=175C
Figure 8. Figure 8. Figure 8. Figure 8. Typical collector-emitter saturation voltage Typical collector-emitter saturation voltage Typical collector-emitter saturation voltage Typical collector-emitter saturation voltage
as a function of junction temperature as a function of junction temperature as a function of junction temperature as a function of junction temperature
(Vj=15V)
T, JUNCTON TEMPERATURE [C]
V

j
;
,
,
,

,

C
O
L
L
E
C
T
O
R
-
E
M

T
T
E
R

S
A
T
U
R
A
T

O
N

[
A
]
0 25 50 75 100 125 150 175
1.0
1.5
2.0
2.5
3.0
3.5
4.0
=10A
=20A
=40A
9
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
Figure 9. Figure 9. Figure 9. Figure 9. Typical switching times as a function of Typical switching times as a function of Typical switching times as a function of Typical switching times as a function of
collector current collector current collector current collector current
(ind. load, T=175C, Vj=400V,
Vj=15/0V, R=14,6D, test circuit in Fig.
E)
, COLLECTOR CURRENT [A]
t
,

S
W

T
C
H

N
G

T

M
E
S

[
n
s
]
0 5 10 15 20 25 30 35 40
10
100
t;,
t
t;,,
t,
Figure 10. Figure 10. Figure 10. Figure 10. Typical switching times as a function of Typical switching times as a function of Typical switching times as a function of Typical switching times as a function of
gate resistor gate resistor gate resistor gate resistor
(ind. load, T=175C, Vj=400V,
Vj=15/0V, =20A, test circuit in Fig. E)
R, GATE RESSTOR [D]
t
,

S
W

T
C
H

N
G

T

M
E
S

[
n
s
]
5 10 15 20 25 30 35 40 45 50
10
100
1000
t;,
t
t;,,
t,
Figure 11. Figure 11. Figure 11. Figure 11. Typical switching times as a function of Typical switching times as a function of Typical switching times as a function of Typical switching times as a function of
junction temperature junction temperature junction temperature junction temperature
(ind. load, Vj=400V, Vj=15/0V,
=20A, R=14,6D, test circuit in Fig. E)
T, JUNCTON TEMPERATURE [C]
t
,

S
W

T
C
H

N
G

T

M
E
S

[
n
s
]
25 50 75 100 125 150 175
1
10
100
t;,
t
t;,,
t,
Figure 12. Figure 12. Figure 12. Figure 12. Gate-emitter threshold voltage as a Gate-emitter threshold voltage as a Gate-emitter threshold voltage as a Gate-emitter threshold voltage as a
function of junction temperature function of junction temperature function of junction temperature function of junction temperature
(=0.29mA)
T, JUNCTON TEMPERATURE [C]
V

j
;
,
-

,

G
A
T
E
-
E
M

T
T
E
R

T
H
R
E
S
H
O
L
D

V
O
L
T
A
G
E

[
V
]
0 25 50 75 100 125 150 175
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
typ.
min.
max.
10
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
Figure 13. Figure 13. Figure 13. Figure 13. Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a
function of collector current function of collector current function of collector current function of collector current
(ind. load, T=175C, Vj=400V,
Vj=15/0V, R=14,6D, test circuit in Fig.
E)
, COLLECTOR CURRENT [A]
E
,

S
W

T
C
H

N
G

E
N
E
R
G
Y

L
O
S
S
E
S

[
m
J
]
4 8 12 16 20 24 28 32 36 40
0.0
0.5
1.0
1.5
2.0
2.5
E,
E,,*
E,,*
Figure 14. Figure 14. Figure 14. Figure 14. Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a
function of gate resistor function of gate resistor function of gate resistor function of gate resistor
(ind. load, T=175C, Vj=400V,
Vj=15/0V, =20A, test circuit in Fig. E)
R, GATE RESSTOR [D]
E
,

S
W

T
C
H

N
G

E
N
E
R
G
Y

L
O
S
S
E
S

[
m
J
]
5 10 15 20 25 30 35 40 45 50
0.00
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
E,
E,,*
E,,*
Figure 15. Figure 15. Figure 15. Figure 15. Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a
function of junction temperature function of junction temperature function of junction temperature function of junction temperature
(ind load, Vj=400V, Vj=15/0V, =20A,
R=14,6D, test circuit in Fig. E)
T, JUNCTON TEMPERATURE [C]
E
,

S
W

T
C
H

N
G

E
N
E
R
G
Y

L
O
S
S
E
S

[
m
J
]
25 50 75 100 125 150 175
0.0
0.2
0.4
0.6
0.8
1.0
E,
E,,*
E,,*
Figure 16. Figure 16. Figure 16. Figure 16. Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a Typical switching energy losses as a
function of collector emitter voltage function of collector emitter voltage function of collector emitter voltage function of collector emitter voltage
(ind. load, T=175C, Vj=15/0V, =20A,
R=14,6D, test circuit in Fig. E)
Vj, COLLECTOR-EMTTER VOLTAGE [V]
E
,

S
W

T
C
H

N
G

E
N
E
R
G
Y

L
O
S
S
E
S

[
m
J
]
200 250 300 350 400 450
0.00
0.25
0.50
0.75
1.00
1.25
1.50
E,
E,,*
E,,*
11
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
Figure 17. Figure 17. Figure 17. Figure 17. Typical gate charge Typical gate charge Typical gate charge Typical gate charge
(=20A)
Qj, GATE CHARGE [nC]
V

j
,

G
A
T
E
-
E
M

T
T
E
R

V
O
L
T
A
G
E

[
V
]
0 20 40 60 80 100 120 140
0
2
4
6
8
10
12
14
16
120V
480V
Figure 18. Figure 18. Figure 18. Figure 18. Typical capacitance as a function of Typical capacitance as a function of Typical capacitance as a function of Typical capacitance as a function of
collector-emitter voltage collector-emitter voltage collector-emitter voltage collector-emitter voltage
(Vj=0V, f=1MHz)
Vj, COLLECTOR-EMTTER VOLTAGE [V]
C
,

C
A
P
A
C

T
A
N
C
E

[
p
F
]
0 10 20 30
10
100
1000
C,,,
C,,,
C,,,
Figure 19. Figure 19. Figure 19. Figure 19. Typical short circuit collector current as a Typical short circuit collector current as a Typical short circuit collector current as a Typical short circuit collector current as a
function of gate-emitter voltage function of gate-emitter voltage function of gate-emitter voltage function of gate-emitter voltage
(Vj~400V, start atT=25C)
Vj, GATE-EMTTER VOLTAGE [V]

;
z

,

S
H
O
R
T

C

R
C
U

T

C
O
L
L
E
C
T
O
R

C
U
R
R
E
N
T

[
A
]
10 12 14 16 18 20
50
100
150
200
250
300
Figure 20. Figure 20. Figure 20. Figure 20. Short circuit withstand time as a function Short circuit withstand time as a function Short circuit withstand time as a function Short circuit withstand time as a function
of gate-emitter voltage of gate-emitter voltage of gate-emitter voltage of gate-emitter voltage
(Vj~400V, start at T~150C)
Vj, GATE-EMTTER VOLTAGE [V]
t
z

,

S
H
O
R
T

C

R
C
U

T

W

T
H
S
T
A
N
D

T

M
E

[

s
]
10 11 12 13 14 15
0
3
6
9
12
15
12
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
Figure 21. Figure 21. Figure 21. Figure 21. GBT transient thermal impedance GBT transient thermal impedance GBT transient thermal impedance GBT transient thermal impedance
(D=t/T)
t, PULSE WDTH [s]
Z
,
-
)

,

T
R
A
N
S

E
N
T

T
H
E
R
M
A
L

M
P
E
D
A
N
C
E

[
K
/
W
]
1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
r,[K/W]:
,[s]:
1
0.07041042
9.6E-5
2
0.3070851
6.8E-4
3
0.3198984
0.01084623
4
0.1871538
0.06925485

Figure 22. Figure 22. Figure 22. Figure 22. Diode transient thermal impedance as a Diode transient thermal impedance as a Diode transient thermal impedance as a Diode transient thermal impedance as a
function of pulse width function of pulse width function of pulse width function of pulse width
(D=t/T)
t, PULSE WDTH [s]
Z
,
-
)

,

T
R
A
N
S

E
N
T

T
H
E
R
M
A
L

M
P
E
D
A
N
C
E

[
K
/
W
]
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
0.001
0.01
0.1
1
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
i:
r,[K/W]:
,[s]:
1
0.4398
1.3E-4
2
0.6662
1.1E-3
3
0.4734
7.1E-3
4
0.3169
0.04629

Figure 23. Figure 23. Figure 23. Figure 23. Typical reverse recovery time as a Typical reverse recovery time as a Typical reverse recovery time as a Typical reverse recovery time as a
function of diode current slope function of diode current slope function of diode current slope function of diode current slope
(V=400V)
di=/dt, DODE CURRENT SLOPE [A/s]
t
,
,
,

R
E
V
E
R
S
E

R
E
C
O
V
E
R
Y

T

M
E

[
n
s
]
600 800 1000 1200 1400 1600
50
100
150
200
250
T=25C, F = 10A
T=175C, F = 10A
Figure 24. Figure 24. Figure 24. Figure 24. Typical reverse recovery charge as a Typical reverse recovery charge as a Typical reverse recovery charge as a Typical reverse recovery charge as a
function of diode current slope function of diode current slope function of diode current slope function of diode current slope
(V=400V)
di=/dt, DODE CURRENT SLOPE [A/s]
Q
,
,
,

R
E
V
E
R
S
E

R
E
C
O
V
E
R
Y

C
H
A
R
G
E

[

C
]
800 900 1000 1100 1200 1300 1400 1500 1600
0.00
0.25
0.50
0.75
1.00
T=25C, F = 10A
T=175C, F = 10A
13
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
Figure 25. Figure 25. Figure 25. Figure 25. Typical reverse recovery current as a Typical reverse recovery current as a Typical reverse recovery current as a Typical reverse recovery current as a
function of diode current slope function of diode current slope function of diode current slope function of diode current slope
(V=400V)
di=/dt, DODE CURRENT SLOPE [A/s]

,
,
,

R
E
V
E
R
S
E

R
E
C
O
V
E
R
Y

C
U
R
R
E
N
T

[
A
]
800 900 1000 1100 1200 1300 1400 1500 1600
6
8
10
12
14
16
18
T=25C, F = 10A
T=175C, F = 10A
Figure 26. Figure 26. Figure 26. Figure 26. Typical diode peak rate of fall of reverse Typical diode peak rate of fall of reverse Typical diode peak rate of fall of reverse Typical diode peak rate of fall of reverse
recovery current as a function of diode recovery current as a function of diode recovery current as a function of diode recovery current as a function of diode
current slope current slope current slope current slope
(V=400V)
di=/dt, DODE CURRENT SLOPE [A/s]
d

,
,
/
d
t
,

d
i
o
d
e

p
e
a
k

r
a
t
e

o
f

f
a
l
l

o
f

,
,

[
A
/

s
]
800 900 1000 1100 1200 1300 1400 1500 1600
-1400
-1200
-1000
-800
-600
-400
-200
0
T=25C, F = 10A
T=175C, F = 10A
Figure 27. Figure 27. Figure 27. Figure 27. Typical diode forward current as a Typical diode forward current as a Typical diode forward current as a Typical diode forward current as a
function of forward voltage function of forward voltage function of forward voltage function of forward voltage
V=, FORWARD VOLTAGE [V]

=
,

F
O
R
W
A
R
D

C
U
R
R
E
N
T

[
A
]
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
5
10
15
20
25
30
35
40
T=25C
T=175C
Figure 28. Figure 28. Figure 28. Figure 28. Typical diode forward voltage as a Typical diode forward voltage as a Typical diode forward voltage as a Typical diode forward voltage as a
function of junction temperature function of junction temperature function of junction temperature function of junction temperature
T, JUNCTON TEMPERATURE [C]
V
=
,

F
O
R
W
A
R
D

V
O
L
T
A
G
E

[
V
]
0 25 50 75 100 125 150 175
1.00
1.25
1.50
1.75
2.00
2.25
2.50
==5A
==10A
==20A
14
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
15
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
16
KP20N60H3
High speed switching series third generation
Rev. 1.1 2010-07-26
Revision History
KP20N60H3
Revision: 2010-07-26, Rev. 1.1 Revision: 2010-07-26, Rev. 1.1 Revision: 2010-07-26, Rev. 1.1 Revision: 2010-07-26, Rev. 1.1
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 - Preliminary datasheet
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