BPW77NA, BPW77NB

Vishay Semiconductors

Silicon NPN Phototransistor, RoHS Compliant

FEATURES
Package type: leaded Package form: TO-18 Dimensions (in mm): 4.7 High photo sensitivity High radiant sensitivity Suitable for visible and near infrared radiation
94 8401

Fast response times Angle of half sensitivity: = 10 Base terminal connected

DESCRIPTION
BPW77 is a silicon NPN phototransistor with high radiant sensitivity in hermetically sealed TO-18 package with base terminal and glass lens. It is sensitive to visible and near infrared radiation.

Hermetically sealed package Lead (Pb)-free component in accordance RoHS 2002/95/EC and WEEE 2002/96/EC with

APPLICATIONS
Detector in electronic control and drive circuits

PRODUCT SUMMARY
COMPONENT BPW77NA BPW77NB Note Test condition see table Basic Characteristics Ica (mA) 7.5 to 15 > 10 (deg) 10 10 0.1 (nm) 450 to 1080 450 to 1080

ORDERING INFORMATION
ORDERING CODE BPW77NA BPW77NB Note MOQ: minimum order quantity PACKAGING Bulk Bulk REMARKS MOQ: 1000 pcs, 1000 pcs/bulk MOQ: 1000 pcs, 1000 pcs/bulk PACKAGE FORM

TO-18 TO-18

ABSOLUTE MAXIMUM RATINGS

PARAMETER Collector base voltage Collector emitter voltage Emitter base voltage Collector current Collector peak current Total power dissipation Junction temperature Operating temperature range Storage temperature range Soldering temperature Thermal resistance junction/ambient Thermal resistance junction/gase Note Tamb = 25 C, unless otherwise specified t5s Connected with Cu wire, 0.14 mm2 tp/T = 0.5, tp 10 ms Tamb 25 C TEST CONDITION SYMBOL VCBO VCEO VEBO IC ICM PV Tj Tamb Tstg Tsd RthJA RthJC VALUE 80 70 5 50 100 250 125 - 40 to + 125 - 40 to + 125 260 400 150 UNIT V V V mA mA mW C C C C K/W K/W

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For technical questions, contact: detectortechsupport@vishay.com

Document Number: 81527 Rev. 1.5, 08-Sep-08

BPW77NA, BPW77NB
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors

800

Ptot - Total Power Dissipation (mW)

600 RthJC

400

200 RthJA 0 0 25 50 75 100 125 150

94 8342

Tamb - Ambient Temperature (C)

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature

BASIC CHARACTERISTICS
PARAMETER Collector emitter breakdown voltage Collector emitter dark current Collector emitter capacitance Angle of half sensitivity Wavelength of peak sensitivity Range of spectral bandwidth Collector emitter saturation voltage Turn-on time Turn-off time Cut-off frequency Note Tamb = 25 C, unless otherwise specified Ee = 1 mW/cm2, = 950 nm, IC = 1 mA TEST CONDITION IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 SYMBOL V(BR)CEO ICEO CCEO p 0.1 VCEsat ton toff fc MIN. 70 1 6 10 850 450 to 1080 0.15 6 5 110 0.3 100 TYP. MAX. UNIT V nA pF deg nm nm V s s kHz

VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100

TYPE DEDICATED CHARACTERISTICS

PARAMETER Collector light current TEST CONDITION Ee = 1 mW/cm2, PART SYMBOL Ica Ica MIN. 7.5 10 TYP. MAX. 15 UNIT mA mA = 950 nm, BPW77NA VCE = 5 V BPW77NB

BASIC CHARACTERISTICS
Tamb = 25 C, unless otherwise specified
10 6 I CEO - Collector Dark Current (nA) 10 5 10 4 10 3 10 2 10 1 10 0 20
94 8343

2.50
I ca rel - Relative Collector Current

2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 0

VCE = 5V E e = 1 mW/cm2 = 950 nm

V CE = 20 V E=0

50

100

150
94 8344

10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature (C)

Tamb - Ambient Temperature (C)

Fig. 2 - Collector Dark Current vs. Ambient Temperature Document Number: 81527 Rev. 1.5, 08-Sep-08

Fig. 3 - Relative Collector Current vs. Ambient Temperature www.vishay.com 403

For technical questions, contact: detectortechsupport@vishay.com

BPW77NA, BPW77NB
Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant

100 ton/toff - Turn-on/Turn-off Time (s) Ica - Collector Light Current (mA) BPW77NB 10

12 10 8 6
ton

VCE = 5 V RL = 100 = 950 nm

BPW77NA

4 2 0
toff

0.1 V CE = 5 V = 950 nm 0.01 0.01 0.1 1 10

12

16

94 8349

Ee - Irradiance (mW/cm2)

94 8253

IC - Collector Current (mA)

Fig. 4 - Collector Light Current vs. Irradiance

Fig. 7 - Turn-on/Turn-off Time vs. Collector Current

10

Ica - Collector Light Current (mA)

= 950 nm

Ee = 1 mW/cm2 0.5 mW/cm2 0.2 mW/cm2

S ()rel - Relative Spectral Sensitivity

100

1.0 0.8 0.6 0.4 0.2 0 400 600 800 1000 - Wavelength (nm)

0.1 mW/cm2 0.05 mW/cm2

0.02 0.1 0.1 1

mW/cm2 10

94 8350

V CE - Collector Emitter Voltage (V)

94 8348

Fig. 5 - Collector Light Current vs. Collector Emitter Voltage

Fig. 8 - Relative Spectral Sensitivity vs. Wavelength

CCEO - Collector Ermitter Capacitance (pF)

20

10

20 30

Srel - Relative Sensitivity

16

f = 1 MHz

40 1.0 0.9 0.8 0.7 50 60 70 80

12

4 0 0.1 1 10 100

0.6
94 8351

0.4

0.2

0.2

0.4

0.6

94 8247

VCE - Collector Ermitter Voltage (V)

Fig. 6 - Collector Emitter Capacitance vs. Collector Emitter Voltage

Fig. 9 - Relative Radiant Sensitivity vs. Angular Displacement

www.vishay.com 404

For technical questions, contact: detectortechsupport@vishay.com

Document Number: 81527 Rev. 1.5, 08-Sep-08

BPW77NA, BPW77NB
Silicon NPN Phototransistor, RoHS Compliant Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters

4.69

Chip position

(2.5)

6.15

0.25

+ 0.02 - 0.07

0.45

+ 0.02 - 0.05

13.2

0.7

5.5

0.15

2.54 nom.

technical drawings according to DIN specifications

Lens
0.05

Drawing-No.: 6.503-5023.01-4 Issue:1; 01.07.96

96 12180

Document Number: 81527 Rev. 1.5, 08-Sep-08

For technical questions, contact: detectortechsupport@vishay.com

www.vishay.com 405

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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000