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November 1995

2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor


General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features
High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability.

___________________________________________________________________________________________

D G S
TO-92
2N7000

S
(TO-236AB) 2N7002/NDS7002A

Absolute Maximum Ratings


Symbol Parameter

TA = 25C unless otherwise noted


2N7000 2N7002 NDS7002A

Units

VDSS

Drain-Source Voltage

60 60

V V V

VDGR
VGSS

Drain-Gate Voltage (RGS < 1 M)


Gate-Source Voltage - Continuous - Non Repetitive (tp < 50s)

20 40
200 500 400 3.2 -55 to 150 300 115 800 200 1.6 280 1500 300 2.4 -65 to 150

ID PD TJ,TSTG TL

Maximum Drain Current - Continuous - Pulsed Maximum Power Dissipation Derated above 25 C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds Thermal Resistance, Junction-to-Ambient
o

mA mW mW/C C C

THERMAL CHARACTERISTICS

RJA

312.5

625

417

C/W

1997 Fairchild Semiconductor Corporation

2N7000.SAM Rev. A1

Electrical Characteristics T
Symbol Parameter OFF CHARACTERISTICS

= 25C unless otherwise noted

Conditions

Type
All 2N7000

Min

Typ

Max

Units

BVDSS IDSS

Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current

VGS = 0 V, ID = 10 A VDS = 48 V, VGS = 0 V TJ=125C VDS = 60 V, VGS = 0 V TJ=125C

60 1 1 1 0.5 10 100 -10 -100

V A mA A mA nA nA nA nA

2N7002 NDS7002A 2N7000 2N7002 NDS7002A 2N7000 2N7002 NDS7002A

IGSSF

Gate - Body Leakage, Forward

VGS = 15 V, VDS = 0 V VGS = 20 V, VDS = 0 V

IGSSR

Gate - Body Leakage, Reverse

VGS = -15 V, VDS = 0 V VGS = -20 V, VDS = 0 V

ON CHARACTERISTICS (Note 1)

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 1 mA VDS = VGS, ID = 250 A

2N7000 2N7002 NDS7002A 2N7000

0.8 1

2.1 2.1 1.2 1.9 1.8

3 2.5 5 9 5.3 7.5 13.5 7.5 13.5 2 3.5 3 5 2.5 0.4 3.75 1.5 1 0.15

RDS(ON)

Static Drain-Source On-Resistance VGS = 10 V, ID = 500 mA TJ =125C VGS = 4.5 V, ID = 75 mA VGS = 10 V, ID = 500 mA TJ =100C VGS = 5.0 V, ID = 50 mA TJ =100C VGS = 10 V, ID = 500 mA TJ =125C VGS = 5.0 V, ID = 50 mA TJ =125C

2N7002

1.2 1.7 1.7 2.4

NDS7002A

1.2 2 1.7 2.8

VDS(ON)

Drain-Source On-Voltage

VGS = 10 V, ID = 500 mA VGS = 4.5 V, ID = 75 mA VGS = 10 V, ID = 500mA VGS = 5.0 V, ID = 50 mA VGS = 10 V, ID = 500mA VGS = 5.0 V, ID = 50 mA

2N7000

0.6 0.14 0.6 0.09 0.6 0.09

2N7002

NDS7002A

2N7000.SAM Rev. A1

Electrical Characteristics T
Symbol Parameter

= 25oC unless otherwise noted

Conditions

Type
2N7000 2N7002 NDS7002A 2N7000 2N7002 NDS7002A

Min

Typ

Max

Units

ON CHARACTERISTICS Continued (Note 1)

ID(ON)

On-State Drain Current

VGS = 4.5 V, VDS = 10 V VGS = 10 V, VDS > 2 VDS(on) VGS = 10 V, VDS > 2 VDS(on)

75 500 500 100 80 80

600 2700 2700 320 320 320 20 11 4 50 25 5 10

mA

gFS

Forward Transconductance

VDS = 10 V, ID = 200 mA VDS > 2 VDS(on), ID = 200 mA VDS > 2 VDS(on), ID = 200 mA

mS

DYNAMIC CHARACTERISTICS

Ciss Coss Crss ton

Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Time

VDS = 25 V, VGS = 0 V, f = 1.0 MHz

All All All

pF pF pF ns

VDD = 15 V, RL = 25 , ID = 500 mA, VGS = 10 V, RGEN = 25 VDD = 30 V, RL = 150 , ID = 200 mA, VGS = 10 V, RGEN = 25

2N7000

2N700 NDS7002A

20

toff

Turn-Off Time

VDD = 15 V, RL = 25 , ID = 500 mA, VGS = 10 V, RGEN = 25 VDD = 30 V, RL = 150 , ID = 200 mA, VGS = 10 V, RGEN = 25

2N7000

10

ns

2N700 NDS7002A

20

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

IS ISM VSD

Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 115 mA (Note 1) VGS = 0 V, IS = 400 mA (Note 1)

2N7002 NDS7002A 2N7002 NDS7002A 2N7002 NDS7002A

115 280 0.8 1.5 0.88 0.88 1.5 1.2

mA A V

Note: 1. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.

2N7000.SAM Rev. A1

Typical Electrical Characteristics


2N7000 / 2N7002 / NDS7002A
2 3

VGS = 10V
, DRAIN-SOURCE CURRENT (A)
1 .5

9.0

8.0 7.0 6.0


RDS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2 .5

V GS =4.0V

4 .5 5 .0 6 .0

7 .0
1 .5

5.0
0 .5

8 .0 9 .0 10

4.0 3.0
0 1 2 3 V DS , DRAIN-SOURCE VOLTAGE (V) 4 5

I
0

0 .5

0 .4

0 .8 1 .2 I D , DRA IN CURRENT (A)

1 .6

Figure 1. On-Region Characteristics

Figure 2. On-Resistance Variation with Gate Voltage and Drain Current

DRAIN-SOURCE ON-RESISTANCE

DRAIN-SOURCE ON-RESISTANCE

1.75

V GS = 10V I D = 500m A
R DS(on) , NORMALIZED

V GS = 10V
2 .5

R DS(ON) , NORMALIZED

1.5

TJ = 1 2 5 C

1.25

1 .5

25C
1

-55C
0 .5

0.75

0.5 -5 0

-2 5

0 25 50 75 100 T , JUNCTION T EMPERATURE (C) J

125

150

0 .4

0 .8 1 .2 I D , DRAIN CURRENT (A)

1 .6

Figure 3. On-Resistance Variation with Temperature

Figure 4. On-Resistance Variation with Drain Current and Temperature

1 .1

1.6 ID , DRAIN CURRENT (A)

125C

Vth , NORMALIZED GATE-SOURCE THRESHOLD VOLTAGE

VDS = 10V

T J = -55C

25C

1 .0 5

V DS = VGS I D = 1 mA

1.2

0 .9 5

0.8

0 .9

0.4

0 .8 5

2 V
GS

4 6 8 , GATE TO SOURCE VOLTAGE (V)

10

0 .8 -50

-25

0 25 50 75 100 TJ , JUNCTION TEM PERATURE (C)

125

150

Figure 5. Transfer Characteristics

Figure 6. Gate Threshold Variation with Temperature

2N7000.SAM Rev. A1

Typical Electrical Characteristics (continued)


2N7000 / 2N7002 /NDS7002A
1.1

DRAIN-SOURCE BREAKDOWN VOLTAGE

I D = 250A
IS , REVERSE DRAIN CURRENT (A)
1.075 1.05 1.025 1 0.975 0.95 0.925 -50

2 1 0 .5

V GS = 0V

BV DSS , NORMALIZED

TJ = 1 2 5 C
0 .1 0 .0 5

25C -5 5 C

0 .0 1 0 .0 0 5

-25

0 25 50 75 100 TJ , JUNCTION TEM PERATURE (C)

125

150

0 .0 0 1 0 .2

0 .4 V SD

0 .6 0 .8 1 1 .2 , BODY DIODE FORW A RD VOLTAGE (V)

1 .4

Figure 7. Breakdown Voltage Variation with Temperature

Figure 8. Body Diode Forward Voltage Variation with

60 40

10

V DS = 2 5 V

C iss
20

VGS , GATE-SOURCE VOLTAGE (V)

CAPACITANCE (pF)

C oss
10

ID = 5 0 0 m A
4

C rss f = 1 MHz V GS = 0V
1 2 V DS 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50

280m A 115m A

0 .4

0 .8 1 .2 Q g , GATE CHARGE (nC)

1 .6

Figure 9. Capacitance Characteristics

Figure 10. Gate Charge Characteristics

VDD
t d(on)

t on tr
90%

t off t d(off)
90%

tf

V IN
D

RL V OUT
DUT

Output, Vout

VGS

10%

10% 90%

R GEN

Inverted

Input, Vin
S
10%

50%

50%

Pulse Width

Figure 11.

Figure 12. Switching Waveforms

2N7000.SAM Rev. A1

Typical Electrical Characteristics (continued)


3 2 1 I D , DRAIN CURRENT (A) 0.5
RD S(O Lim N) it

3 2 1 ID , DRAIN CURRENT (A)

10
it

0u

10 1m 10 ms 10 0m s 1s 10 DC s s

0u

0.5
RD S(O

N)

Lim

1m

0.1 0.05

0.1 0.05

10 10 0m

ms

V GS = 10V SINGLE PULSE T A = 25C

VGS = 10V SINGLE PULSE


0.01

0.01 0.005 1

T A = 25C
1 2

1s 10 s DC

5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V)

60

80

0.005

5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V)

60

80

Figure 13. 2N7000 Maximum Safe Operating Area


3 2 1 I D , DRAIN CURRENT (A) 0.5
RD S(O N)

Figure 14. 2N7002 Maximum Safe Operating Area

Lim

it

10 1m s

0u

10
0.1 0.05

ms

10

0m

V GS = 10V SINGLE PULSE T A = 25C

1s 10 s DC

0.01 0.005 1

5 10 20 30 V DS , DRAIN-SOURCE VOLTAGE (V)

60

80

Figure 15. NDS7000A Maximum Safe Operating Area


1 TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE

0.5

D = 0.5

0.2 0.1 0.05

0 .2 0.1 P(pk) 0.05

R JA (t) = r(t) * R JA R = (See Datasheet) JA

t1
0 .02 0.01

t2

0.02 0.01 0.0001

Single Pulse

TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2

0.001

0.01

0.1 t 1, TIME (sec)

10

100

300

Figure 16. TO-92, 2N7000 Transient Thermal Response Curve


1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05
D = 0.5 0 .2 0.1 0 .0 5 0 .0 2 0 .0 1 P(pk)

r(t), NORMALIZED EFFECTIVE

R JA (t) = r(t) * R JA R = (See Datasheet) JA

0.01
Single Pulse

t1

t2

0.002 0.001 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10

TJ - T A = P * RJA (t) Duty Cycle, D = t1 /t2

100

300

Figure 17. SOT-23, 2N7002 / NDS7002A Transient Thermal Response Curve


2N7000.SAM Rev. A1

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Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

Rev. G