ON Semiconductort

SCANSWITCH
NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors
The MJE16204 is a stateoftheart SWITCHMODE bipolar power transistor. It is specifically designed for use in horizontal deflection circuits for 20 mm diameter neck, high and very resolution, full page, monochrome monitors.

MJE16204
POWER TRANSISTORS 6.0 AMPERES 550 VOLTS VCES 45 AND 80 WATTS

550 Volt CollectorBase Breakdown Capability Typical Dynamic Desaturation Specified (New TurnOff Characteristic) Application Specific StateoftheArt Die Design Isolated or NonIsolated TO220 Type Packages Fast Switching: 65 ns Inductive Fall Time (Typ) 680 ns Inductive Storage Time (Typ) 0.4 Volts at 3.0 Amps Collector Current and 400 mA Base Drive

Low Saturation Voltage: Low CollectorEmitter Leakage Current

100 A Max at 550 Volts VCES

High EmitterBase Breakdown Capability For High Voltage Off Drive

Circuits 9.0 Volts (Min)

Case 221D is UL Recognized at 3500 VRMS: File #E69369

CASE 221A09 TO220AB MJE16204

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

Semiconductor Components Industries, LLC, 2001

April, 2001 Rev. 2

Publication Order Number: MJE16204D


MAXIMUM RATINGS
Rating Symbol VCES MJE16204 550 250 8.0 Unit Vdc Vdc Vdc V CollectorEmitter Breakdown Voltage CollectorEmitter Sustaining Voltage EmitterBase Voltage VCEO(sus) VEBO RMS Isolation Voltage(2) (for 1 sec, TA = 25_C, Rel. Humidity < 30%) Per Fig. 14 Per Fig. 15 Per Fig. 16 VISOL Collector Current Continuous Pulsed (1) Base Current Continuous Pulsed (1) IC ICM IB IBM 6.0 8.0 2.0 4.0 0.2 Adc Adc mJ Repetitive EmitterBase Avalanche Energy Total Power Dissipation @ TC = 25_C Total Power Dissipation @ TC = 100_C Derated above TC = 25_C W(BER) PD 80 32 0.64 Watts W/_C _C Operating and Storage Temperature Range TJ, Tstg 55 to 150

MJE16204

THERMAL CHARACTERISTICS

Characteristic

Symbol RJC TL

Max 260

Unit _C

Thermal Resistance Junction to Case

1.56

_C/W

Lead Temperature for Soldering Purposes 1/8 from the case for 5 seconds

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%. (2) Proper strike and creepage distance must be provided. *Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink thermal grease applied, and a mounting torque of 6 to 8 inSlbs.

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic OFF CHARACTERISTICS (3) Symbol Min Typ Max Unit Collector Cutoff Current (VCE = 550 Vdc, VBE = 0 V) EmitterBase Leakage (VEB = 8.0 Vdc, IC = 0) ICES 100 10 Adc Adc Vdc Vdc IEBO EmitterBase Breakdown Voltage (IE = 1.0 mA, IC = 0) V(BR)EBO 8.0 11 CollectorEmitter Sustaining Voltage (Table 1) (IC = 10 mAdc, IB = 0) VCEO(sus) 250 325 ON CHARACTERISTICS (3) CollectorEmitter Saturation Voltage (IC = 1.0 Adc, IB = 133 mAdc) (IC = 3.0 Adc, IB = 400 mAdc) BaseEmitter Saturation Voltage (IC = 3.0 Adc, IB = 400 mAdc) VCE(sat) Vdc 0.25 0.4 0.9 14 0.6 1.0 1.5 20 VBE(sat) hFE Vdc DC Current Gain (ICE = 6.0 Adc, VCE = 5.0 Vdc) 8.0 DYNAMIC CHARACTERISTICS Dynamic Desaturation Interval (IC = 3.0 A, IB1 = 400 mA) Output Capacitance (VCE = 10 Vdc, IE = 0, ftest = 100 kHz) tds 50 90 ns Cob fT 150 pF Gain Bandwidth Product (VCE = 10 Vdc, IC = 1.0 A, ftest = 1.0 MHz) EmitterBase TurnOff Energy (EB(avalanche) = 500 ns, RBE = 22 ) 10 MHz J EB(off) Cchs 6.6 3.0 CollectorHeatsink Capacitance (Mounted on a 1 x 2 x 1/16 Copper Heatsink, VCE = 0, ftest = 100 kHz) pF SWITCHING CHARACTERISTICS Inductive Load (Table 2) (IC = 3.0 A, IB = 400 mA) Storage Fall Time ns tsv tfi 680 65 1500 150 (3) Pulse Test: Pulse Width = 300 s, Duty Cycle v 2.0%.

MJE16204

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MJE16204
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 60 50 hFE , DC CURRENT GAIN 30 20 TJ = 100C 25C -55C VCE = 5 V 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 TJ = 25C TJ = 100C IC/IB1 = 10 7.5 5

10 7 5 3 0.5 2 1 3 5 IC, COLLECTOR CURRENT (AMPS) 7 10

0.7

IC, COLLECTOR CURRENT (AMPS)

Figure 1. Typical DC Current Gain

Figure 2. Typical CollectorEmitter Saturation Voltage

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

VBE, BASE-EMITTER VOLTAGE (VOLTS)

30 20 10 7 5 3 2 1 0.7 0.5 0.3 0.2

TJ = 25C

10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 0.3 0.5 0.7 1 2 3 5

IC/IB1 = 5 to 10

IC = 1 A

2A

3A

6A

TJ = 25C TJ = 100C

0.1 0.07 0.05 0.03 0.03 0.05 0.07 0.1

0.2 0.3 0.5 0.7 1 IB, BASE CURRENT (AMPS)

10

20

30

IC, COLLECTOR CURRENT (AMPS)

Figure 3. Typical CollectorEmitter Saturation Region

Figure 4. Typical BaseEmitter Saturation Voltage

10K f T, TRANSITION FREQUENCY (MHz) 5K 3K 2K C, CAPACITANCE (pF) 1K 500 300 200 100 50 30 20 Cob TC = 25C Cib

20 18 16 14 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 VCE = 10 V ftest = 1 MHz TC = 25C

10 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500 1K VR, REVERSE VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMPS)

Figure 5. Typical Capacitance

Figure 6. Typical Transition Frequency

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MJE16204
SAFE OPERATING AREA
10 7 5 3 2 1 0.7 0.5 0.3 0.2 TC = 25C 7 IC, COLLECTOR CURRENT (AMPS) MJE16204 10 s 6 5 4 3 2 1 0 50 IC/IB1 5 TJ 100C 150 250 350 450 550 VBE(off) = 0 V VBE(off) = 5 V

IC, COLLECTOR CURRENT (AMPS)

d c

1ms

0.1 0.07 0.05 0.03 0.02 0.01 3 5

SECONDARY BREAK DOWN WIREBOND LIMIT THERMAL LIMIT 200 250 50 70 100 7 10 20 30 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

VCE(pk), PEAK COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 7. Maximum Forward Biased Safe Operating Area

Figure 8. Maximum Reverse Biased Safe Operating Area

SAFE OPERATING AREA INFORMATION

FORWARD BIAS
1 0.8 0.6 0.4 0.2 0 THERMAL DERATING SECOND BREAK DOWN DERATING

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 7 is based on TC = 25_C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
REVERSE BIAS

POWER DERATING FACTOR

2 0

40

60

80

100

120

140

160

TC, CASE TEMPERATURE (C)

Figure 9. Power Derating

For inductive loads, high voltage and high current must be sustained simultaneously during turnoff, in most cases, with the basetoemitter junction reverse biased. Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current. This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc.

The safe level for these devices is specified as Reverse Biased Safe Operating Area and represents the voltagecurrent condition allowable during reverse biased turnoff. This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. Figure 8 gives the RBSOA characteristics.

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MJE16204
Table 1. RBSOA/V(BR)CEO(sus) Test Circuit
0.02 F H.P. 214 OR EQUIV. P.G. 0 -35 V 0.02 F 5 0 50 0 T1 0V Lcoil (ICpk) T1 [ VCC T1 adjusted to obtain IC(pk) 50 +V -V T.U.T . *IC + RB2 2N533 7 10 0 -V IC VCE(pk) L MR85 6 Vclamp VCC VCE IC(pk) + 10 0 +V 11 V

20 10 F RB1

2N619 1

1 F

A *IB

IB1 IB IB2

V(BR)CEO L = 10 mH RB2 = VCC = 20 Volts

*Tektronix *P6042 or *Equivalent

RBSOA L = 200 H RB2 = 0 VCC = 20 Volts RB1 selected for desired IB1 Note: Adjust V to obtain desired VBE(off) at Point A.

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MJE16204
Table 2. High Resolution Deflection Application Simulator
+24 V

U2 MC7812 + VI
G N D

VO C2 10 F + Q2 MJ11016 (IB ) R1 1k 6.2 V C6 100 F + LY R5 1k (IC) Q5 MJ11016

C1 100 F

R7 2.7 k

R8 9.1 k

R9 470

+ R10 47

C3 10 F

C4 0.005 7 R2 R510 SYN C Q 1 BS17 0 T1: Ferroxcube Pot Core #1811 P3C8 Primary/Sec. Turns Ratio = 18:6 Primary Inductance Gap: LP = 250 H R3 250 (DC) 8
O S %C

C5 0.1 6 VCC
G N D

100 V R10 470 1W Q3 MJE 15031 T 1 R12 470 1W D1 MUR11 0 L B R4 22 D2 MUR46 0 CY

OU T

1 U1 MC1391P

VCE Q4 DUT

R6 1k

LB = 0.5 H CY = 0.01 F LY = 13 H

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MJE16204
2K TC = 25C tf , FALL TIME (ns) 1K 700 500 ICI/B1 = 7.5 10 100 70 50 ICI/B1 = 7.5 10 200 TC = 25C

t s , STORAGE TIME (ns)

300 200

30 20

2 3 5 IC, COLLECTOR CURRENT (AMPS)

2 3 5 IC, COLLECTOR CURRENT (AMPS)

10

Figure 10. Typical Collector Current Storage Time in Deflection Circuit Simulator

Figure 11. Typical Collector Current Fall Time in Deflection Circuit Simulator

DYNAMIC DESATURATIION
COLLECTOR-EMITTER VOLTAGE (VOLTS) 90% IC(pk) IC 0 0 0% IB VCE = 20 V tsv 10% IC(pk) tfi VCE 5 VCE 4 3 2 1 0 tds TIME (ns) DYNAMIC SATURATION TIME IS MEASURED FROM VCE = 1 V TO VCE = 5 V

Figure 12. Deflection Simulator Switching Waveforms From Circuit in Table 2

Figure 13. Definition of Dynamic Saturation Measurement

The SCANSWITCH series of bipolar power transistors are specifically designed to meet the unique requirements of horizontal deflection circuits in computer monitor applications. Historically, deflection transistor design was focused on minimizing collector current fall time. While fall time is a valid figure of merit, a more important indicator of circuit performance as scan rates are increased is a new characteristic, dynamic desaturation. In order to assure a linear collector current ramp, the output transistor must remain in hard saturation during storage time and exhibit a rapid turnoff transition. A sluggish transition results in serious consequences. As the saturation voltage of the output transistor increases, the voltage across the yoke

drops. Roll off in the collector current ramp results in improper beam deflection and distortion of the image at the right edge of the screen. Design changes have been made in the structure of the SCANSWITCH series of devices which minimize the dynamic desaturation interval. Dynamic desaturation has been defined in terms of the time required for the VCE to rise from 1.0 to 5.0 volts (Figures 12 and 13) and typical performance at optimized drive conditions has been specified. Optimization of device structure results in a linear collector current ramp, excellent turnoff switching performance, and significantly lower overall power dissipation.

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MJE16204
1 0.7 0.5 0.2 0.1 0.07 0.05 0.02 0.01 0.01 SINGLE PULSE 0.02 0.05 0.1 0.2 0.5 1

D = 0.5 0.2 0.1 0.05 0.02 0.01 RJC(t) = r(t) RJC RJC = 1.56C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 2 5 t, TIME (ms) 10 20 50

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

P(pk)

t1

t2 200 500 10 k

DUTY CYCLE, D = t1/t2 100

Figure 14. Typical Thermal Response for MJE16204

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MJE16204
PACKAGE DIMENSIONS TO220AB CASE 221A09 ISSUE AA
T B
4 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04

F T S

Q
1 2 3

A U K

H Z L V G D N R J

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MJE16204

Notes

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MJE16204

SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. SCANSWITCH is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

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MJE16204D