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5
TECHNOLOGY
Low-Ohmic TO-254AA
International Rectifiers R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.
Features:
n n n n n n n n n n
Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Eyelets Electrically Isolated Light Weight
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns C g
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1
01/16/07
IRHMS597260
Pre-Irradiation
Min
-200
Test Conditions
VGS = 0V, ID = -1.0mA Reference to 25C, ID = -1.0mA VGS = -12V, ID = -19A VDS = VGS, ID = -1.0mA VDS > -15V, IDS = -19A VDS= -160V ,VGS=0V VDS = -160V, VGS = 0V, TJ = 125C VGS = -20V VGS = 20V VGS =-12V, ID = -30A VDS = -100V VDD = -100V, ID = -30A VGS =-12V, RG = 1.20
BVDSS / T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage -2.0 gfs Forward Transconductance 23 IDSS Zero Gate Voltage Drain Current IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (Miller) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA nC
ns
7170 920 86
pF
Test Conditions
A
V ns C Tj = 25C, IS = -30A, VGS = 0V Tj = 25C, IF = -30A, di/dt -100A/s VDD -50V
Thermal Resistance
Parameter
RthJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page
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IRHMS597260
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Test Conditions
VGS = 0V, ID = -1.0mA VGS = VDS, ID = -1.0mA VGS =-20V VGS = 20 V VDS = -160V, VGS =0V VGS = -12V, ID =-19A VGS = 0V, IS = -30A
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
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IRHMS597260
Pre-Irradiation
1000
VGS TOP -15V -12V -10V -9.0V -8.0V -7.0V -6.0V BOTTOM -5.0V
1000
100
-5.0V
100
VGS -15V -12V -10V -9.0V -8.0V -7.0V - 6.0V BOTTOM -5.0V TOP
-5.0V
10
10
20s PULSE WIDTH Tj = 25C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
20s PULSE WIDTH Tj = 150C 1 0.1 1 10 100 -VDS , Drain-to-Source Voltage (V)
1000
2.5
-32A ID = -30A
-I D, Drain-to-Source Current ( )
2.0
1.5
1.0
VDS = -50V 20s PULSE 15 WIDTH 10 5 5.5 6 6.5 7 7.5 8 -V GS, Gate-to-Source Voltage (V)
0.5
VGS = -12V
0 20 40 60 80 100 120 140 160
TJ , Junction Temperature ( C)
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Pre-Irradiation
IRHMS597260
12000
10000
C, Capacitance (pF)
12
8000
Ciss
6000
4000
Coss
2000
Crss
0 1 10 100
1000
1000
100
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IRHMS597260
Pre-Irradiation
30
V GS
V DS
RD
RG
D.U.T.
+
20
V GS
Pulse Width 1 s Duty Factor 0.1 %
V DD
10
VGS
10%
90%
VDS
D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.01
0.001 0.00001
0.0001
0.001
0.01
0.1
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Pre-Irradiation
IRHMS597260
VDS
800
RG
D.U.T
IAS
+
DRIVER
V VDD DD
A
600
VGS -20V
tp
0.01
400
15V
200
25
50
75
100
125
150
QG
50K
-12 V
-12V 12V
.2F
.3F
QGS
QGD
VGS
-3mA
D.U.T.
+VDS
VG
Charge
IG
ID
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IRHMS597260
Pre-Irradiation
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
Footnotes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = -50V, starting TJ = 25C, L=0.73mH Peak IL = -30A, VGS = -12V ISD -30A, di/dt -220A/s, VDD -200V, TJ 150C -12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. -160 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
3X
3.81 [.150]
2X
3.81 [.150]
NOT ES:
1. 2. 3. 4.
DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES]. CONTROLLING DIMENSION: INCH. CONFORMS TO JEDEC OUTLINE TO-254AA.
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 01/2008
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