1985 Fairchild Discrete Data Book

F=AIRCHILD
A Schlumberger Company
Discrete Data Book
1985
Analog Division
1985 Fairchild Camera and Instrument Corporation
Analog Division, Discrete Small Sigrial Products 4300 Redwood Highway, San Rafael, Ca 94903 (415) 479-8000 TWX, DISC.sRAF
Introduction
The Discrete Small Signal Division, located in San Rafael, manufactures a broad line of discrete semiconductor products. They include: Small signal and computer diodes in hermetic glass packages. General purpose, switching and power transistors in both plastic and hermetic metal can packages. Monolithic diode arrays in plastic and ceramic packages. Plastic quad transistor arrays. Plastic phototransistors. Many of the above devices are also available in surface mount packages. - Leadless glass diodes - SOT diodes and transistors - sOle arrays Transistor, diode and monolithic array die - Hi-reliability qualified die (waffle pack) - Tested die in wafer form
These products are designed to fill the needs of a wide range of consumer, industrial, computer and telecommuications applications. Also available are additionally processed high reliability and special selection devices. The selection guides in this book are designed to provide an easy reference to the many standard device types currently offered by Fairchild. If your needs are not satisfied by any of the devices offered, please consult your local Fairchild sales representative or the factory, as special selections are available. Fairchild has been a major supplier in this market for many years and the quality of product, high volume on-time delivery and customer service is outstanding.
iii
TABLE OF CONTENTS
Section 1a Index and Device Cross Reference Industry Standard ~ Fairchild Section 1b Index and Device Cross Reference Thruhole ... Surface Mount Section 2 Device Selection Guides Computer Diodes Low Leakage Diodes High Voltage Switching Diodes General Purpose Diodes Surface Mount Diodes Military Qualified Small Signal Diodes Military Qualified Diode Arrays Military Qualified Diode Assemblies Monolithic Diode Arrays Zener Diodes Military Qualified Transistors Special Quad Transistors NPN R.F. Transistors NPN Switches and Core Drivers PNP Switches and Core Drivers NPN General Purpose Amplifiers PNP General Purpose Amplifiers Phototransistors NPN Power Transistors PNP Power Transistors Production Information Product Family Curves Diodes Phototransistors Transistors Test Circuits Ordering Information and Package Outlines High Reliability Information Dice & Wafer Information Field Sales Offices
1-3
1-38
2-3 2-5 2-6 2-8 2-9 2-10 2-12 2-13 2-13 2-16 2-19 2-21 2-22 2-22 2-26 2-26 2-38 2-48 2-49 2-49 3-3
Section 3 Section 4
4-3 4-15 4-19 5-3
Section 5 Section 6
6-3 7-3 8-3 9-3
Section 7 Section 8 Section 9
Index and Device Crossreference Thruhole Index and Device Cross reference Surface Mount Device Selection Guides Product Information
Product Family Curves Test Circuits Ordering Information and Package Outlines High Reliability Information Dice and Wafer Information Field Sales Offices
FAIRCHILD
Index and Device Crossreference

Industry Standard
~
Fairchild
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
1N34A 1N34AS 1N35 1N36 1N38 1N38A 1N38B 1N39 1N39A 1N39B 1N40 1N41 1N42 1N43 1N44 1N45 1N46 1N47 1N48 1N49 1N50 1N51 1N52 1N52A 1N54 1N54A 1N55 1N55A 1N55B 1N56 1N56A 1N57 1N57A 1N58 1N58A 1N61 1N62 1N63 1N63A 1N64 1N64A 1N65 1N66 1N66A 1N67 1N67A 1N68 1N68A 1N69 1N69A
1 N4454 1 N4148 1N4454 1N4148 1N4148 1N3070 1N3070 1N3070 1N3070 1N3070 1N4148 1N4454 1N3070 1N4148 1N3070 1N4454 1N4454 1N3070 1N4454 1N4148 1N4148 1N4454 1N4454 1N4454 1N4148 1N4148 1N3070 1N3070 1N3070 1N4148 1N4148 1N4454 1N4454 1N3070 1N3070 1N3070 1N3070 1N4148 1N4148 1N4148 1N4148 1N4454 1N4454 1N4454 1N4148 1N4148 1N3070 1N3070 1N4454 1N4454
3-204 3-201 3-204 3-201 3-201 3-205 3-205 3-205 3-205 3-205 3-201 3-204 3-205 3-201 3-205 3-204 3-204 3-205 3-204 3-201 3-201 3-204 3-204 3-204 3-201 3-201 3-205 3-205 3-205 3-201 3-201 3-204 3-204 3-205 3-205 3-205 3-205 3-201 3-201 3-201 3-201 3-204 3-204 3-204 3-201 3-201 3-205 3-205 3-204 3-204
2-3 2-3 2-3 2-3 2-3 2-6 2-6 2-6 2-6 2-6 2-3 2-3 2-6 2-3 2-6 2-3 2-3 2-6 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-6 2-6 2-6 2-3 2-3 2-3 2-3 2-6 2-6 2-6 2-6 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-6 2-6 2-3 2-3
1N70 1N70A 1N71 1N74 1N75 1N81 1N81 1N84 1N86 1N87 1N87A 1N87S 1N87T. 1N88 1N89 1N90 1N95 1N96 1N96A 1N97 1N97A 1N98 1N98A 1N99 1N99A 1N100 1N100A 1N101 1N102 1N103 1N104 1N107 1Nl08 1N111 1N112 1N113 fNf14
1N115
1N116 1N116A 1N117 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A
1N3070 1N4148 FDH900 1N4148 1N3070 1N4305 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N3070 1N4454 1N4454 1N4148 1N4447 1N4148 1N4448 1N4447 1N4454 1N4448 1N4148 1N4454 1N4447 1N4448 1N3070 1N3070 1N4448 1N4448 FDH999 1N4448 1N4148 1N4148 1N4454 1N4454 1N4454 1N4454 1N4454 1N4454 1N4454 1N4454 1N4448 1N4148 1N4148 1N4148 1N4148 1N3070 1N3070
3-205 3-201 3-56 3-201 3-205 3-204 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-205 3-204 3-204 3-201 3-201 3-201 3-201 3-201 3-204 3-201 3-201 3-204 3-201 3-201 3-205 3-205 3-201 3-201 3-56 3-201 3-201 s:.201 3-204 3-204 3-204 3-204 3-204 3-204 3-204 3-204 3-201 3-201 3-201 3-201 3-201 3-205 3-205
2-6 2-3 2-4 2-3 2-6 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-6 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-6 2-6 2-3 2-3 2-4 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-6 2-6
1-3
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
1N128 1N128A 1N132 1N133 1N134 1N135 1N137A 1N137B 1N138A 1N138B 1N139 1N140 1N141 1N142 1N143 1N144 1N145 1N175 1N190 1N191 1N192 1N193 1N194 1N194A 1N195 1N196 1N198 1N198A 1N198B 1N198M 1N251 1N251A 1N252 1N252A 1N265 1N266 1N267 1N268 1N270 1N273 1N276 1N277 1N277M 1N278 1N279 1N281 1N282 1N283 1N287 1N288
1N4148 1N4148 1N4148 1N4148 1N4454 1N4148 1N483B 1N483B 1N483B 1N483B 1N4148 1N4448 1N4148 1N4938 1N4938 1N4454 1N4449 1N3070 FDH999 1N4148 1N4148 1N4149 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4454 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 FDH444 1N4448 1N4454 1N3070 1N4448 1N4446 1N4448 1N4448 1N4449 FDH444 1N4148 1N4148
3-201 3-201 3-201 3-201 3-204 3-201 3-196 3-196 3-196 3-196 3-201 3-201 3-201 3-205 3-205 3-204 3-201 3-205 3-56 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-204 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-53 3-201 3-204 3-205 3-201 3-201 3-201 3-201 3-201 3-53 3-201 3-201
2-3 2-3 2-3 2-3 2-3 2-3 2-5 2-5 2-5 2-5 2-3 2-3 2-3 2-6 2-6 2-3 2-3 2-6 2-4 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2"6 2-3 2-3 2-6 2-3 2-3 2-3 2-3 . 2-3 2-6 2-3 2-3
1N289 1N290 1N291 1N292 1N294 1N294A 1N295 1N295A 1N295S 1N295X 1N296 1N297 1N297A 1N298 1N298A 1N299 1N300 1N300A 1N301 1 N301A 1N301B 1N303 1N303A 1N303B 1N304 1N307 1N309 1N310 1N312 1N313 1N314 1N330 1N331 1N337 1N350 1N351 1N352 1N355 1N373 1N375 1N376 1N377 1N378 1N385 1N386 1N387 1N388 1N389 1N390 1N391
1N4148 1N3070 1N3070 1N4448 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4305 1N482B 1N482B 1N457 1N457 1N457 1N458 1N484B 1N484B 1N4148 1N4938 1N4148 1N4148 1N4448 1N4148 1N4148 1N456 1N458 2N2221 1N457 1N484B 1N485B 1N4148 1N5227A 1N5230A 1N5233A 1N4148 1N5238A 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148 1N4148
3-201 3-205 3-205 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-204 3-196 3-196 3-194 3-194 3-194 3-194 3-196 3-196 3-201 3-205 3-201 3-201 3-201 3-201 3-201 3-194 3-194 3-236 3-194 3-196 3-196 3-201 3-213 3-213 3-213 3-201 3-213 3-201 3-201 3-201 3-201 3-201 3-201 3-201
2-3 2-6 2-6 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-5 2-5
2-5 2-5 2-5 2-3 2-6 2-3 2-3 2-3 2-3 2-3 2-5 2-5 2-34 2-5 2-5 2-3 2-16 2-16 2-16 2-3 2-17 2-3 2-3 2-3 2-3 2-3 2-3 2-3
1-4
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
1N392 1N393 1N394 1N417 1N418 1N419 1N431 1N432 1N432A 1N432B 1N433 1N433A 1N433B 1N434 1N434A 1N434B 1N435 1N447 1N448 1N450 1N451 1N452 1N453 1N454 1N456 1N456A 1N457 1N457A 1N457M 1N458 1N458A 1N458M 1N459 1N459A 1N459M 1N460 1N460A 1N460B 1N461 1N461A 1N462 1N462A 1N463 1N463A 1N464 1N464A 1N478 1N479 1N480 1N482
1N4148 1N3070 1N3070 1N4448 1N4148 FDH444 1N3070 1N4148 1N4446 1N4448 1N3070 1N3070 1N3070 1N3070 1N3070 1N3070 1N4148 1N4449 1N4449 1N4151 1N3070 1N4448 1N3070 FDH444 1N456 1N456A 1N457 1N457A 1N457 1N458 1N458A 1N458 1N459 1N459A 1N459 1N4148 1N4148 1N4448 1N461A 1N461A 1N462A 1N462A 1N463A 1N463A 1N463A 1N463A 1N4148 1N4148 1N4148 1N482B
3-201 3-205 3-205 3-201 3-201 3-53 3-205 3-201 3-201 3-201 3-205 3-205 3-205 3-205 3-205 3-205 3-201 3-201 3-201 3-209 3-205 3-201 3-205 3-53 3-194 3-194 3-194 3-194 3-194 3-194 3-194 3-194 3-194 3-194 3-194 3-201 3-201 3-201 3-195 3-195 3-195 3-195 3-195 3-195 3-195 3-195 3-201 3-201 3-201 3-196
2-3 2-6 2-6 2-18 2-3 2-6 2-6 2-3 2-3 2-3 2-6 2-6 2-6 2-6 2-6 2-6 2-3 2-3 2-3 2-3 2-6 2-3 2-6 2-6 2-5 2-5 2-5 2-5 2-5 2-5 2-5 2-5 2-5 2-3 2-3 2-3 2-8 2-8 2-8 2-8 2-8 2-8 2-8 2-8 2-3 2-3 2-3 2-5
1N482A 1N482B 1N482C 1N483 1N483A 1N483B 1N483C 1N484 1N484A 1N484B 1N484C 1N485 1N485A 1N485B 1N485C 1N490 1N497 1N498 1N499 1N500 1N501 1N502 1N520B 1N527 1N541 1N542 1N566 1N567 1N568 1N569 1N571 1N616 1N617 1N618 1N619 1N622 1N625 1N625A 1N625M 1N626 1N626A 1N626M 1N627 1N627A 1N628 1N628A 1N629 1N629A 1N631 1N632
1N482B 1N482B 1N482B 1N483B 1N483B 1N483B 1N483B 1N484B 1N484B 1N484B 1N484B 1N485B 1N485B 1N485B 1N485B 1N4148 1N4448 1N4448 1N4448 1N4448 1N4448 1N3070 1N457 1N4305 1N4305 1N4305 1N3070 1N3070 1N4305 1N4305 FDH444 1N4148 1N4148 1N4148 1N4148 1N4938 1N625 1N4148 1N625 1N626 1N4148 1N626 1N627 1N3070 1N628 1N3070 1N629 1N3070 1N4148 1N4148
3-196 3-196 3-196 3-196 3-196 3-196 3-196 3-196 3-196 3-196 3-196 3-196 3-196 3-196 3-196 3-201 3-201 3-201 3-201 3-201 3-201 3-205 3-194 3-204 3-204 3-204 3-205 3-205 3-204 3-204 3-53 3-201 3-201 3-201 3-201 3-205 3-197 3-201 3-197 3-197 3-201 3-197 3-197 3-205 3-197 3-205 3-197 3-205 3-201 3-201
2-5 2-5 2-5 2-5 2-5 2-5 2-5 2-5 2-5 2-5 2-5 2-5 2-5 2-5 2-5 2-3 2-3 2-3 2-3 2-3 2-3 2-6 2-3 2-3 2-3 2-6 2-6 2-3 2-3 2-6 2-3 2-3 2-3 2-3 2-6 2-4 2-3 2-4 2-7 2-3 2-7 2-7 2-6 2-6 2-6 2-6 2-6 2-3 2-3
1-5
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"--
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
lN633 lN634 lN635 lN636 lN658 lN658A lN659 lN659A lN660 lN660A lN661 lN661A lN664 lN665 lN666 lN667 lN668 lN669 lN695 lN695A lN696 lN698 lN699 lN703 1 N703A lN704 lN704A lN705 1 N705A lN706 1 N706A 1N707 1 N707A lN708 lN708A lN709 1 N709A lN7l0 lN7l0A 1 N7ll lN7llA 1 N712 1 N712A 1 N713 1 N713A lN714 lN714A 1 N715 1N715A 1N716
lN3070 lN3070 lN3070 lN4448 lN658 lN658 lN659 lN659 lN660 lN660 1 N661 lN661 lN5237A lN5242A lN5245B lN5248A 1 N5251A lN5245A lN4148 1 N4148 1N4148 lN4305 lN4448 lN5227A lN5227B 1N5229A 1N5229B lN5230A 1N5230B 1N5232A 1 N5232B 1N5236A lN5236B 1N5232A 1 N5232B 1N5234A 1N5234B 1N5235A 1 N5235B 1N5236A 1 N5236B 1N5237A 1N5237B 1N5239A 1N5239B 1N5240A 1 N5240B 1N5241A 1 N5241 B lN5242A
3-205 3-205 3-205 3-201 3-198 3-198 3-199 3-199 3-199 3-199 3-199 3-199 3-213 3-213 3-213 3-213 3-213 3-213 3-201 3-201 3-201 3-204 3-201 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213
2-6 2-6 2-6 2-3 2-7 2-7 2-8 2-8 2-8 2-8 2-8 2-8 2-17 2-17 2-17 2-17 2-17 2c 17 2-3 2-3 2-3 2-3 2-3 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-17 2-17 2-16 2-16 2-16 2-16 2-16 2-16 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17
lN716A 1 N717 1 N717A 1 N718 1 N718A lN719 1 N719A lN720 1 N720A 1 N721 1 N721A lN722 1 N722A lN723 lN723A lN724 1 N724A lN725 lN725A lN726 lN726A lN746 1 N746A lN747 lN747A lN748 1 N748A lN749 lN749A lN750 1 N750A lN751 lN751A lN752 lN752A lN753 1 N753A lN754 lN754A lN755 lN755A lN756 1 N756A lN757 lN757A lN758 1 N758A 1N759 1N759A 1N761
lN5242B lN5243A lN5243B lN5245A lN5245B lN5246A lN5246B lN5248A lN5248B lN5250A lN5250B lN5251A lN5251B lN5252A lN5252B lN5254A 1 N5254B lN5256A lN5256B lN5257A lN5257B lN746 lN746A lN747 lN747A lN748 lN748A lN749 lN749A lN750 lN750A lN751 lN751A lN752 1 N752A lN753 lN753A lN754 lN754A lN755 lN755A lN756 lN756A lN757 lN757A lN758 1N758A 1N759 lN759A 1N5230A
3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-200 3-213
2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-17 2-17 2-17 2-17 2c 17 2-17 2-17 2-17 2-16
1-6
Index and Device Cross reference
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
II
1N762 1N763 1N764 1N765 1N766 1N767 1N768 1N769 1N770 1N771 1N771A 1N772 1N772A 1N773 1N773A 1N774 1N774A 1N775 1N776 1N777 1N778 1N779 1N781 1N781A 1N788 1N789 1N789M 1N790 1N790M 1N791 1N791M 1N792 1N792M 1N793 1N793M 1N794 1N795 1N796 1N797 1N798 1N799 1N800 1N801 1N802 1N803 1N804 1N805 1N806 1N807 1N808
1N5232B 1N5238B 1N5238A 1N5240A 1N5243A 1N5246A 1N5249A 1N5252A 1N4305 1N4448 FDH444 1N4448 FDH444 1N4448 FDH444 1N4448 FDH444 1N4448 1N4448 1N4448 1N4148 1N3070 1N4305 1N4305 1N4448 1N4148 1N4148 1N4148 1N4148 1N4448 1N4448 1N4448 1N4448 1N4148 1N4148 1N4148 1N4448 1N4448 1N3070 1N3070 1N3070 1N3070 1N3070 1N3070 1N3070 1N3070 1N4148 1N4148 1N3070 1N4448
3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-204 3-201 3-53 3-201 3-53 3-201 3-53 3-201 3-53 3-201 3-201 3-201 3-201 3-205 3-204 3-204 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-205 3-205 3-205 3-205 3-205 3-205 3-205 3-205 3-201 3-201 3-205 3-201
2-16 2-17 2-17 2-17 2-17 2-17 2-18 2-18 2-3 2-3 2-6 2-3 2-6 2-3 2-6 2-3 2-6 2-3 2-3 2-3 2-3 2-6 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-6 2-6 2-6 2-6 2-6 2-6 2-6 2-6 2-3 2-3 2-3 2-3
1N809 1N810 1N811 1N811M 1N812 1N812M 1N813 1N813M 1N814 1N814M 1N815 1N815M 1N817 1N818 1N81A 1N835 1N837 1N837A 1N838 1N839 1N840 1N840M 1N841 1N842 1N843 1N844 1N845 1N890 1N891 1N892 1N893 1N897 1N898 1N899 1N900 1N901 1N902 1N903 1N903A 1N903AM 1N903M 1N904 1N904A 1N904AM 1N904M 1N905 1N905A 1N905AM 1N905M 1N906
1N3070 1N4148 1N4148 1N4148 1N4149 1N4149 1N4148 1N4148 1N4148 1N4148 1N4448 1N4448 1N3070 1N4148 1N4148 1N4305 FDH444 FDH444 1N3070 1N3070 FDH444 1 N3070 1N3070 1N3070 1N3070 1N3070 1N3070 1N4447 1N4448 1N4448 1N3070 1N4148 1N4448 1N3070 1N3070 1N3070 1N3070 1N4148 1N4154 1N4154 1N4154 1N4154 1N4154 1N4154 1N4154 1N4151 1N4154 1N4154 1N4154 1N4149
3-205 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-205 3-201 3-201 3-204 3-53 3-53 3-205 3-205 3-53 3-205 3-205 3-205 3-205 3-205 3-205 3-201 3-201 3-201 3-205 3-201 3-201 3-205 3-205 3-205 3-205 3-201 3-209 3-209 3-209 3-209 3-209 3-209 3-209 3-209 3-209 3-209 3-209 3-201
2-6 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-6 2-3 2-3 2-3 2-6 2-6 2-6 2-6 2-6 2-6 2-6 2-6 2-6 2-6 2-6 2-3 2-3 2-3 2-6 2-3 2-3 2-6 2-6 2-6 2-6 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3
1-7
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
lN906A lN906AM lN906M lN907 lN907A lN907AM lN907M 1N908 lN908A lN908AM 1N908M lN909 lN910 1N91i lN914 1N914A 1N914B 1N914M 1N915 lN916 1N916A lN916B 1N918 1N919 lN920 1N921 1N922 1N923 lN924 1N925 1N926 lN927 lN928 1N930 1N931 1N932 1N933 lN934 1N948 1N949 1N957 1N957A 1N957B lN958 lN958A lN958B 1N959 1N959A lN959B 1N960
lN4447 lN4447 1N4447 lN4149 1N4448 1N4447 1N4149 1N4149 1N4447 1N4447 1N4149 1N4449 1N4449 1N4449 1N914 1N914A 1N914B 1N914 1N914B 1N916 1N916A 1N916B 1N914 1N3070 FDH400 FDH400 FDH400 FDH400 1N483B 1N4148 1N4148 1N4148 1N3070 1N4446 1N3070 1N3070 1N3070 1N3070 1N4448 1N4305 1N957 1N957A 1N957B 1N958 1N958A 1N958B 1N959 1N959A 1N959B 1N960
3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-205 3-53 3-53 3-53 3-53 3-196 3-201 3-201 3-201 3-205 3-201 3-205 3-205 3-205 3-205 3-201 3-204 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203
2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3
2~3
2-3 2-6 2-6 2-6 2-6 2-6 2-5 2-3 2-3 2-3 2-6 2-3 2-6 2-6 2-6 2-6 2-3 2-3 2-16 2-16 2-16 2-16 2-16 2-16 2-17 2-17 2-17 2-17
lN960A lN960B lN961 1 N961 A lN961B lN962 lN962A lN962B lN963 1N963A lN963B lN964 1N964A 1N964B 1N965 1N965A lN965B 1N966 1N966A 1N966B lN967 lN967A 1N967B 1N968 1N968A 1N968B 1N969 1N969A lN969B lN970 lN970A 1N970B lN971 1N971A 1N971B 1N972 1N972A 1N972B lN973 lN973A 1N973B lN993 1N994 1N995 1N997 1N998 1N999 lNl093 1Nl170 lN1374
lN960A lN960B lN961 lN961A lN961B lN962 1N962A lN962B lN963 lN963A lN963B lN964 1N964A 1N964B lN965 lN965A 1N965B lN966 lN966A lN966B lN967 1N967A 1N967B 1N968 lN968A 1N968B lN969 1N969A 1N969B 1N970 lN970A 1N970B 1N971 lN971A lN971B 1N972 1N972A 1N972B lN973 1N973A 1N973B 1N4447 1N4151 1N4305 1N4148 1N484B lN914 FDH999 lN4148 lN5229A
3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-203 3-201 3-209 3-204 3-201 3-196 3-201 3-56 3-201 3-213
2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18
2~18
2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-3 2-3 2-3 2-3 2-5 2-3 2-4 2-3 2-16
1-8
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Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
1N1507 1N1507A 1N1508 1 N1508A 1N1509 1 N1509A 1 N1510 1N1510A 1 N1511 1 N1511A 1 N1512 1N1512A 1 N1513 1N1513A 1 N1514 1N1514A 1 N1515 1N1515A 1 N1516 1N1516A 1N1517 1N1517A 1N1518 1N1518A 1N1519 1N1519A 1N1520 1 N1520A 1N1521A 1 N1522 1N1522A 1N1523 1N1523A 1N1524 1N1524A 1N1525 1 N1525A 1N1526 1 N1526A 1N1527A 1N1528 1 N1528A 1 N1561 1N1562 1N1744 1N1744A 1N1765A 1N1766 1N1766A 1N1767
1N4730 1N4730A 1N4732 1 N4732A 1N4734 1N4734A 1N4736 1 N4736A 1N4738 1N4738A 1N4740 1N4740A 1N4742 1N4742A 1N4744 1N4744A 1N4746 1N4746A 1N4748 1N4748A 1N4750 1N4750A 1N4730 1N4730A 1N4732 1N4732A 1N4734 1N4734A 1N4736A 1N4738 1N4738A 1N4740 1N4740A 1N4742 1N4742A 1N4744 1N4744A 1N4746 1N4746A 1N4748A 1N4750 1N4750A 1N4305 1N4305 1N4740 1N4743A 1N4734A 1N4735 1N4735A 1N4736
3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-204 3-204 3-211 3-211 3-211 3-211 3-211 3-211
2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-18 2-18 2-18 2-18 2-18 2-18 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-18 2-18 2-18 2-18 2-18 2-3 2-3 2-17 2-17 2-16 2-16 2-16 2-16
1N1767A 1 N1768 1 N1768A 1 N1769 1N1769A 1 N1770 1 N1770A 1 N1771 1N1771A 1N1772 1N1772A 1 N1773 1N1773A 1 N1775 1 N1775A 1N1776 1N1776A 1N1777 1N1777A 1N1778 1N1778A 1 N1779 1N1779A 1 N1780 1 N1780A 1N1781 1N1781A 1 N1782 1 N1782A 1N1783 1N1783A 1N1839 1N1875 1N1876 1N1877 1N1878 1N1879 1N1880 1 N1881 1N1882 1N1927 1N1928 1 N1929 1N1930 1N1931 1 N1932 1N1933 1 N1934 1N1935 1N1936
1N4736A 1N4737 1N4737A 1N4738 1N4738A 1N4739 1N4739A 1N4740 1N4740A 1N4741 1N4741A 1N4742 1N4742A 1N4744 1N4744A 1N4745 1N4745A 1N4746 1N4746A 1N4747 1N4747A 1N4748 1N4748A 1N4749 1N4749A 1 N4750 1N4750A 1N4751 1N4751A 1N4752 1N4752A 2N2218 1N4738 1N4740 1N4742 1N4744 1N4746 1N4748 1N4750 1N4752 1N5228A 1N5230A 1N5232A 1N5235A 1N5237A 1N5240A 1N5242A 1N5245A 1N5248A 1N5251A
3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-236 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213
2-16 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-34 2-17 2-17 2-17 2-17 2-18 2-18 2-18 2-18 2-16 2-16 2-16 2-16 2-17 2-17 2-17 2-17 2-18 2-18
1-9
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Industry Device 1N1954 1 N1955 1 N1956 1N1957 1 N1958 1N1959 1 N1960 1 N1961 1N1962 1N1963 1N1981 1N1982 1 N1983 1N1984 1 N1985 1 N1986 1 N1987 1N1988 1N1989 1N1990 1N2032 1N2033 1N2034 1N2035 1N2036 1N2037 1N2038 1N2039 1 N2040 1N2146 1N2629 1N3016 1N3016A 1N30168 1 N3017 1 N3017A 1N30178 1 N3018 1 N3018A 1 N30188 1 N3019 1 N3019A 1 N30198 1 N3020 1N3020A 1N30208 1 N3021 1N3021A 1N30218 1N3022
Fairchild Device 1N5228A 1N5230A 1N5232A 1N5235A 1N5237A 1N5240A 1N5242A 1N5245A 1N5248A 1N5251A 1N5228A 1N5230A 1N5232A 1N5235A 1N5237A 1N5240A 1N5242A 1 N5245A 1N5248A 1N5251A 1N4732 1N4734 1N4736 1N4739 1N4740 1N4743 1N4745 1N4747 1N4749 FDH400 1N4305 1N4736 1N4736A 1N47368 1N4737 1N4737A 1N47378 1N4738 1N4738 1N4738A 1N4739 1N4739 1N4739A 1N4740 1N4740 1N4740A 1N4741 1N4741 1N4741A 1N4742
Data Sheet Page No. 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-53 3-204 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211
Short Form Pl!ge No. 2-16 2-16 2-16 2-16 2-17 2-17 2-17 2-17 2-18 2-18 2-16 2-16 2-16 2-16 2-17 2-17 2-17 2-17 2-18 2-18 2-16 2-16 2-16 2-17 2-17 2-17 2-17 2-18 2-18 2-6 2-3 2-16 2-16 2-16 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17
Industry Device 1N3022A 1 N30228 1N3023 1N3023A 1 N30238 1N3024 1N3024A 1N30248 1 N3025 1N3025A 1N30258 1N3026 1N3026A 1N30268 1N3027 1 N3027A 1N30278 1N3028 1N3028A 1N30288 1 N3029 1N3029A 1N30298 1N3030 lN3030A 1N30308 1N3031 1 N3031 A 1N30318 1N3032 1N3032A 1N30328 1N3062 1N3063 1N3064 1N3065 1N3066 1N3067 1N3068 1N3069 1N3070 1N3071 1N3097 1N3110 1N3121 1N3122 1 N3123 1N3124 1N3125 1N3144
Fairchild Device 1N4742 1N4742A 1N4743 1N4743 1N4743A 1N4744 1N4744 1N4744A 1N4745 1N4745 1N4745A 1N4746 1N4746 1N4746A 1N4747 1N4747 1N4747A 1N4748 1N4748 1N4748A 1N4749 1N4749 1N4749A 1N4750 1N4750 1N4750A 1 N4751 1N4751 1N4751A 1N4752 1N4752 1N4752A 1N4305 1N4305 1N3064 1N4305 1N4305 1N4148 1N4148 1N4148 1N3070 1N3070 1N4305 1N4305 1N4305 1N4305 1N4305 1N4151 1N4305 1N4305
Data Sheet Page No. 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-204 3-204 3-204 3-204 3-204 3-201 3-201 3-201 3-205 3-205 3-204 3-204 3-204 3-204 3-204 3-209 3-204 3-204
Short Form Page No. 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-6 2-6 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3
1-10
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
1N3145 1N3146 1N3147 1N3160 1N3179 1N3180 1N3181 1N3197 1N3203 1N3204 1N3206 1N3215 1N3223 1N3225 1N3257 1N3258 1N3298 1N3298A 1N3465 1N3466 1N3467 1N3468 1N3469 1N3470 1N3471 1N3483 1N3484 1N3485 1N3535 1N3536 1N3550 1N3559 1N3564 1N3567 1N3568 1N3575 1N3576 1N3592 1N3593 1N3594 1N3595 1N3596 1N3597 1N3598 1N3599 1N3600 1N3601 1N3602 1N3603 1N3604
1N4305 1N4154 1N4448 1N4305 1N3070 1N3070 1N5237A 1N4148 1N4305 1N4305 1N4148 1N4152 1N3070 1N4148 1N4449 1N4448 FDH400 FDH400 FDH444 FDH444 1N4446 1N4446 FDH400 FDH400 1N4148 1N4305 1N4305 1N3070 1N3070 1N457 1N3070 FDH444 1N4448 1N4448 1N4449 1N4838 1N4848 1N4305 1N4148 FDH600 1N3595 1N4449 1N3070 1N4152 1N4938 1N3600 1N4149 1N4151 1N4151 1N4151
3-204 3-209 3-201 3-204 3-205 3-205 3-213 3-201 3-204 3-204 3-201 3-209 3-205 3-201 3-201 3-201 3-53 3-53 3-53 3-53 3-201 3-201 3-53 3-53 3-201 3-204 3-204 3-205 3-205 3-194 3-205 3-53 3-201 3-201 3-201 3-196 3-196 3-204 3-201 3-54 3-206 3-201 3-205 3-209 3-205 3-207 3-201 3-209 3-209 3-209
2-3 2-3 2-3 2-3 2-6 2-6 2-17 2-3 2-3 2-3 2-3 2-3 2-6 2-3 2-3 2-3 2-6 2-6 2-6 2-6 2-3 2-3 2-6 2-6 2-3 2-3 2-3 2-6 2-6 2-6 2-6 2-3 2-3 2-3 2-5 2-5 2-3 2-3 2-3 2-5 2-3 2-6 2-3 2-6 2-7 2-3 2-3 2-3 2-3
1N3605 1N3606 1N3607 1N3608 1N3609 1N3625 1N36388 1N3653 1N3654 1N3666 1N3668 1N3675 1N3675A 1N36758 1N3676 1N3676A 1N36768 1N3677 1N3677A 1N36778 1N3678 1N3678A 1N36788 1N3679 1N3679A 1N36798 1N3680 1N3680A 1N36808 1N3681 1N3681A 1N36818 1N3682 1N3682A 1N36828 1N3683 1N3683A 1N3684 1N3684A 1N36848 1N3685 1N3685A 1N36858 1N3686 1N3686A 1N36868 1N3687 1N3687A 1N36878 1N3688
1N4152 1N4153 1N4151 1N4152 1N4153 1N3070 1N4744A FDH400 1N4448 1N4305 1N4305 1N4736 1 N4736 1N4736A 1N4737 1N4737 1N4737A 1N4738 1N4738 1N4738A 1N4739 1N4739 1N4739A 1N4740 1N4740 1N4740A 1N4741 1N4741 1N4741A 1N4742 1N4742 1N4742A 1N4743 1N4743 1N4743A 1N4744 1N4744 1N4745 1N4745 1N4745A 1N4746 1N4746 1N4746A 1N4747 1N4747 1N4747A 1N4748 1N4748 1N4748A 1N4749
3-209 3-209 3-209 3-209 3-209 3-205 3-211 3-53 3-201 3-204 3-204 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211
2-3 2-3 2-3 2-3 2-3 2-6 2-17 2-6 2-3 2-3 2-3 2-16 2-16 2-16 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18
1-11
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_-
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
1N3688A 1N3689 1N3689A 1N36898 1N3690 1N3690A 1N36908 1N3691 1N3691A 1N36918 1N3722 1N3731 1N3753 1N3769 1N3773 1N3821 1 N3821 A 1N3822 1N3822A 1N3823 1N3823A 1N3824 1N3824A 1N3825 1N3825A 1N3826 1N3826A 1N3827 1N3827A 1N3828 1N3828A 1N3929 1N3829A 1N3830 1N3830A 1N3864 1N3865 1N3872 1N3873 1N3944 ,1N3952 / 1N3953 1N3954 1N3956
1N39~1
1N4008 1N4009 1N4043 1N4086 1N4087
1N4749 1N4750 1N4750 1N4750A 1N4751 1N4751 1N4751A 1N4752 1N4752 1N4752A 1N4148 1N4153 1N4148 1N4305 1N4305 1N4728 1N4728A 1N4729 1N4729A 1N4730 1N4730A 1N4731 1N4731A 1N4732 1N4732A 1N4733 1N4733A 1N4734 1N4734A 1N4735 1N4735A 1N4736 1N4736A 1N4737 1N4737A 1N458 1N4148 FDH444 FDH444 1N4305 1N3070 1N4148 1N4150 1N4305 1N4305 1N4305 1N4009 1N4154 FDH444 FDH900
3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-201 3-209 3-201 3-204 3-204 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-194 3-201 3-53 3-53 3-204 3-205 3-201 3-207 3-204 3-204 3-204 3-208 3-209 3-53 3-56
2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-3 2-3 2-3 2-3 2-3 2-16 2-17 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-17 2-17 2-5 2-3 2-6 2-6 2-3 2-6 2-3 2-3 2-3 2-3 2-3 2-4 2-3 2-6 2-4
1N4088 1N4147 1N4147A 1N41478 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N4154 1N4158 1 N4158A 1 N41588 1N4159 1N4161 1 N4161A 1N41618 1N4162 1N4162A 1 N41628 1N4163 1 N4163A 1N41638 1 N4164 1 N4164A 1N41648 1N4165 1 N4165A 1 N41658 1N4166 1 N4166A 1N4166B 1N4167 1N4167A 1N4167B 1 N4168 1 N4168A 1N4168B 1N4169 1 N4169A 1N4169B 1N4170 1 N4170A 1N4170B 1N4171 1N4171A 1N4171B 1N4172 1 N4172A
1N4148 1N914 1N4752 1N4752A 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N4154 1N4736 1N4736 1N4736A 1N4737 1N4739 1N4739 1N4739A 1N4740 1N4740 1N4740A 1N4741 1N4741 1N4741A 1N4742 1N4742 1N4742A 1N4743 1N4743 1N4743A 1N4744 1N4744 1N4744A 1N4745 1N4745 1N4745A 1N4746 1N4746 1N4746A 1N4747 1N4747 1N4747A 1N4748 1N4748 1N4748A 1N4749 1N4749 1N4749A 1N4750 1N4750
3-201 3-201 3-211 3-211 3-201 3-201 3-207 3-209 3-209 3-209 3-209 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211
2-3 2-3 2-18 2-18 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-16 2-16 2-16 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18
1-12
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short
Form
Page No.
1N4172B 1N4173 1N4173A 1 N4173B 1N4242 1N4243 1N4244 1N4254 1N4305 1N4306 1N4307 1N4308 1N4309 1N4310 1N4312 1N4313 1N4314 1N4315 1N4316 1N4318 1N4319 1N4322 1N4323 1N4323B 1N4324 1N4324A 1N4324B 1N4325 1N4325A 1N4325B 1N4326 1N4326A 1 N4326B 1N4327 1N4327A 1N4327B 1N4328 1N4328A 1N4328B 1N4329 1N4329A 1N4329B 1N4330 1N4330A 1 N4330B 1N4331 1N4331A 1N4331B 1N4332 1N4332A
1N4750A 1N4751 1N4751 1N4751A FDH900 FDH900 1N4244 1N4305 1N4305 1N4306 1N4307 1N4150 FDH400 FDH400 FDH444 1N4151 1N4150 FDH400 FDH400 FDH444 1N4151 1N4150 1N4736 1N4736A 1N4737 1N4737 1N4737A 1N4738 1N4738 1N4738A 1N4739 1N4739 1N4739A 1N4740 1N4740 1N4740A 1N4741 1N4741 1N4741A 1N4742 1N4742 1N4742A 1N4743 1N4743 1N4743A 1N4744 1N4744 1N4744A 1N4745 1N4745
3-211 3-211 3-211 3-211 3-56 3-56 3-18 3-204 3-204 3-210 3-210 3-207 3-53 3-53 3-53 3-209 3-207 3-53 3-53 3-53 3-209 3-207 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211
2-18 2-18 2-18 2-18 2-4 2-4 2-3 2-3 2-3
2-3 2-6 2-6 2-6 2-3 2-3 2-6 2-6 2-6 2-3 2-3 2-16 2-16 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17
1N4332B 1 N4333 1N4333A 1N4333B 1N4334 1N4334A 1N4334B 1 N4335 1N4335A 1 N4335B 1N4336 1N4336A 1N4336B 1 N4337 1N4337A 1N4337B 1N4338 1N4338A 1 N4338B 1N4339 1N4339A 1N4339B 1N4362 1N4363 1N4373 1N4375 1N4376 1N4389 1N4390 1N4391 1N4392 1N4400 1N4401 1N4402 1N4403 1 N4404 1N4405 1N4406 1N4407 1 N4408 1 N4409 1 N441 0 1 N4411 1 N4412 1N4413 1N4414 1N4415 1N4416 1N4424A 1N4442
1N4745A 1N4746 1N4746 1N4746A 1N4747 1N4747 1N4747A 1N4748 1N4748 1N4748A 1N4749 1N4749 1N4749A 1N4750 1N4750 1N4750A 1N4751 1N4751 1N4751A 1N4752 1N4752 1N4752A 1N484B 1N3070 1N4148 1N4153 1N4376 1N4148 FD700 FD700 FD700 1N4736 1N4737 1N4738 1N4739 1N4740 1N4741 1N4742 1N4743 1N4744 1N4745 1N4746 1N4747 1N4748 1N4749 1N4750 1N4751 1N4752 1N4736 .-FDH999
3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-196 3-205 3-201 3-209 3-18 3-201 3-55 3-55 3-55 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-56
2-17 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-5 2-6 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-16 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-16 2-8
1-13
Industry Device
fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
1N4443 1N4445 1N4446 1N4447 1N4448 1N4449 1N4450 1N4451 1N4453 1N4454 1N4455 1N4456 1N4457 1N4502 1N4523 1N4531 1N4532 1N4533 1N4534 1N4536 1N4547 1N4548 1N4608 1N4610 1N4628 1N4629 1N4630 1N4631 1N4632 1N4633 1N4634 1N4635 1N4636 1N4637 1N4638 1N4639 1N4640 1N4641 1N4642 1N4643 1N4644 1N4649 1N4650 1N4651 1N4652 1N4653 1N4654 1N4655 1N4656 1N4657
1N4148 1N4151 1N4446 1N4447 1N4448 1N4449 1N4450 1N4151 1N4448 1N4454 1N4305 1N4150 1N4150 1N4305 1N4305 1N4148 FDH600 1N4152 1N4153 1N4154 1N4151 1N4154 FDH400 1N4150 1N4736A 1N4737A 1N4738A 1N4739A 1N4740A 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A 1N4746A 1N4747A 1N4748A 1N4749A 1N4750A 1N4751A 1N4752A 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A 1N4736A
3-201 3-209 3-201 3-201 3-201 3-201 3-207 3-209 3-201 3-204 3-204 3-207 3-207 3-204 3-204 3-201 3-54 3-209 3-209 3-209 3-209 3-209 3-53 3-207 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211
2-3 2-3 2-3 2-3 2-3 2-3 2-4 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-6 2-3 2-16 2-17 2-17 2-17 2-17
2~17
2-17 2-17 2-17 2-17 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16
1N4658 1N4659 1N4660 1N4661 1N4662 1N4663 1N4664 1N4665 1N4666 1N4667 1N4668 1N4669 1N4670 1N4671 1N4672 1N4673 1N4728 1N4728A 1N4729 1N4729A 1 N4730 1N4730A 1N4731 1N4731A 1N4732 1N4732A 1N4733 1 N4733A 1 N4734 1N4734A 1N4735 1N4735A 1N4736 1N4736A 1N4737 1N4737A 1 N4738 1N4738A 1 N4739 1N4739A 1N4740 1 N4740A 1N4741 1 N4741A 1N4742 1N4742A 1N4743 1N4743A 1N4744 1N4744A
1N4737A 1N4738A 1N4739A 1N4740A 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A 1N4746A 1N4747A 1N4748A 1N4749A 1N4750A 1N4751A 1N4752A 1N4728 1N4728A 1N4729 1N4729A 1N4730 1N4730A 1N4731 1N4731A 1N4732 1N4732A 1N4733 1N4733A 1N4734 1N4734A 1N4735 1N4735A 1N4736 1N4736A 1N4737 1N4737A 1N4738 1N4738A 1N4739 1N4739A 1N4740 1N4740A 1N4741 1N4741A 1N4742 1N4742A 1N4743 1N4743A 1N4744 1N4744A
3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211
3~211
3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211
2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17
1-14
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
1 N4745 1N4745A 1 N4746 1N4746A 1N4747 1N4747A 1N4748 1N4748A 1 N4749 1N4749A 1N4750 1N4750A 1N4751 1N4751A 1N4827 1N4828 1N4829 1N4830 1N4861 1N4862 1N4863 1N4864 1N4888 1N4938 1N4949 1N4950 1N4953 1N5194 1N5195 1N5209 1N5210 1N5219 1N5220 1N5226 1N5226A 1N5226B 1N5227 1N5227A 1N5227B 1N5228 1N5228A 1N5228B 1N5229 1N5229A 1N5229B 1N5230 1N5230A 1N5230B 1N5231 1N5231A
1N4745 1N4745A 1N4746 1N4746A 1N4747 1N4747A 1N4748 1N4748A 1 N4749 1N4749A 1N4750 1N4750A 1N4751 1 N4751A 1N4448 FDH444 FDH444 FDH444 1N457 1N457 1N4148 1N4151 FD777 1N3070 FD777 1N4150 FD777 1N483B 1N4858 1N458 1N459 FDH900 FDH900 1N5226 1N5226A 1N5226B 1N5227 1N5227A 1N52278 1N5228 1N5228A 1N5228B 1N5229 1N5229A 1N5229B 1N5230 1N5230A 1N5230B 1N5231 1N5231A
3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-201 3-53 3-53 3-53 3-194 3-194 3-201 3-209 3-55 3-205 3-55 3-207 3-55 3-196 3-196 3-194 3-194 3-56 3-56 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213
2-17 2-17 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-3 2-6 2-6 2-6
2-3 2-3 2-3 2-6 2-3 2-3 2-3 2-5 2-5 2-5 2-5 2-4 2-4 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16
1N52318 1N5232 1N5232A 1N52328 1 N5233 1N52338 1N5234 1N5234A 1N52348 1N5235 1N5235A 1 N52358 1N5236 1N5236A 1N52368 1 N5237 1 N5237A 1N5237B 1N5238 1N5238A 1N5238B 1 N5239 1 N5239A 1 N5239B 1N5240 1N5240A 1N5240B 1N5241 1 N5241A 1 N52418 1N5242 1N5242A 1N5242B 1N5243 1 N5243A 1 N5243B 1N5244 1N5244A 1 N5244B 1 N5245 1N5245A 1N5245B 1N5246 1N5246A 1N5246B 1 N5247 1N5247A 1 N5247B 1N5248 1N5248A
1N52318 1N5232 1N5232A 1N52328 1N5233 1N52238 1N5234 1N5234A 1N52348 1N5235 1N5235A 1N52358 1N5236 1N5236A 1N52368 1N5237 1N5237A 1N5237B 1N5238 1N5238A 1N5238B 1N5239 1N5239A 1N5239B 1N5240 1N5240A 1N5240B 1N5241 1N5241A 1N52418 1N5242 1N5242A 1N5242B 1N5243 1N5243A 1N5243B 1N5244 1N5244A 1N5244B 1N5245 1N5245A 1N5245B 1N5246 1N5246A 1N5246B 1N5247 1N5247A 1N5247B 1N5248 1N5248A
3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213
2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-17 2-17
2~17
2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-18 2-18
1-15
-~~-~
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
1N5248B 1N5249 1N5249A 1 N5249B 1N5250 1 N5250A 1 N5250B 1 N5251 1 N5251A 1N5251B 1N5252 1N5252A 1N5252B 1N5253 1N5253A 1N5253B 1N5254 1N5254A 1N5254B 1N5255 1N5255A 1 N5255B 1N5256 1N5256A 1N5256B 1N5257 1N5257A 1N5257B 1N5282 1N5315 1N5316 1N5317 1N5318 1N5319 1N5412 1N5413 1N5414 1N5427 1N5428 1N5429 1N5430 1N5431 1N5432 1N5559 1N5559A 1N5559B 1N5560 1 N5561 1N5561A 1 N5561B
1N5248B 1N5249 1N5249A 1N5249B 1N5250 1N5250A 1N5250B 1N5251 1N5251A 1N5251B 1N5252 1N5252A 1N5252B 1N5253 1N5253A 1N5253B 1N5254 1N5254A 1N5254B 1N5255 1N5255A 1N5255B 1N5256 1N5256A 1N5256B 1N5257 1N5257A 1N5257B 1N5282 1N4153 1N4153 1N4150 1N4150 1N4305 1N4305 1N4305 1N4305 1N4148 1N3070 1N485B FDH400 FDH400 FD777 1N4736 1N4736 1N4736A 1N4737 1N4738 1N4738 1N4738A
3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-215 3-209 3-209 3-207 3-207 3-204 3-204 3-204 3-204 3-201 3-205 3-196 3-53 3-53 3-55 3-211 3-211 3-211 3-211 3-211 3-211 3-211
2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-6 2-5 2-6 2-6 2-3 2-16 2-16 2-16 2-17 2-17 2-17 2-17
1N5562 1 N5562A 1N5562B 1 N5563 1N5563A 1 N5563B 1N5564 1N5564A 1N5564B 1 N5565 1 N5565A 1N5565B 1 N5566 1N5566A 1 N5566B 1 N5567 1 N5567A 1N5567B 1 N5568 1 N5568A 1N5568B 1 N5569 1 N5569A 1 N5569B 1 N5570 1 N5570A 1 N5570B 1 N5571 1 N5571A 1 N5571B 1 N5572 1N5572A 1N5572B 1 N5573 1N5573A 1N5573B 1N5574 1N5574A 1 N5574B 1 N5575 1N5575A 1 N5575B 1 N5605 1 N5606 1N5607 1N5608 1N5609 1N5660A 1 N5660B 1 N5711
1N4739 1N4739 1N4739A 1N4740 1N4740 1N4740A 1N4741 1N4741 1N4741A 1N4742 1N4742 1N4742A 1N4743 1N4743 1N4743A 1N4744 1N4744 1N4744A 1N4745 1N4745 1N4745A 1N4746 1N4746 1N4746A 1N4747 1N4747 1N4747A 1N4748 1N4748 1N4748A 1N4749 1N4749 1N4749A 1N4750 1N4750 1N4750A 1N4751 1N4751 1N4751A 1N4752 1N4752 1N4752A 1N457 1N458 1N3070 1N3070 1N3070 1N4737 1N4737A 1N4446
3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 . 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-194 3-194 3-205 3-205 3-205 3-211 3-211 3-201
2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-5 2-6 2-6 2-6 2-17 2-17 2-3
1-16
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
1N5712 1N5713 1N5719 1N5720 1N5721 1N5726 1N5767 1N5768 1N5769 1N5770 1N5771 1N5772 1N5773 1N5774 1N5775 1N5913 1 N5913A 1 N5914 1 N5914A 1N59148 1 N5915 1N5915A 1N59158 1N5916 1 N5916A 1N59168 1 N5917 1N5917A 1.N59178 1 N5918 1N5918A 1N59188 1N5919 1N5919A 1N59198 1N5920 1N5920A 1N59208 1N5921 1 N5921A 1 N59218 1N5922 1N5922A 1N59228 1N5923 1 N5923A 1 N59238 1 N5924 1N5924A 1N59248
1N4446 1N4446 1N484 1N4448 1N4448 FDH400 1N4448 1N5768 FSA2002M 1N5770 FSA2003M 1N5772 FSA2500M 1N5774 FSA2504M 1N4728 1N4728 1N4729 1N4729 1N4729A 1N4730 1N4730 1 N4730A 1N4731 1N4731 1N4731A 1N4732 1N4732 1 N4732A 1N4733 1N4733 1N4733A 1N4734 1N4734 1 N4734A 1N4735 1 N4735 1N4735A 1N4736 1N4736 1 N4736A 1N4737 1N4737 1N4737A 1N4738 1N4738 1 N4738A 1N4739 1N4739 1 N4739A
3-201 3-201 3-196 3-201 3-201 3-53 3-201 3-216 3-82 3-216 3-82 3-216 3-84 3-216 3-86 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211
2-3 2-3 2-5 2-3 2-3 2-6 2-3 2-15 2-13 2-15 2-13 2-15 2-13 2-15 2-14 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17
1N5925 1N5925A 1 N59258 1N5926 1N5926A 1N59268 1N5927 1N5927A 1N59278 1N5928 1N5928A 1N59288 1N5929 1N5929A 1N59298 1N5930 1N5930A 1N59308 1N5931 1 N5931A 1N59318 1N5932 1N5932A 1N59328 1N5933 1N5933A 1N59338 1N5934 1N5934A 1N59348 1N5935 1N5935A 1N59358 1N5936 1N5936A 1N59368 1N5937 1N5937A 1N59378 1N5988 1N5988A 1N5989 1N5989A 1N59898 1N5990A 1N59908 1N5991 1 N5991 A 1N59918 1N5992
1N4740 1N4740 1N4740A 1N4741 1N4741 1N4741 A 1N4742 1N4742 1N4742A 1N4743 1N4743 1N4743A 1N4744 1N4744 1N4744A 1N4745 1N4745 1N4745A 1 N4746 1N4746 1N4728A 1N4747 1N4747 1N4747A 1N4748 1N4748 1N4748A 1N4749 1N4749 1N4749A 1N4750 1N4750 1N4750A 1N4751 1N4751 1N4751A 1N4752 1N4752 1N4752A 1N5226 1N5226A 1N5227 1N5227A 1N52278 1N5228A 1N52288 1N5229 1N5229A 1N52298 1N5230
3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-211 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213
2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-18 2-18 2-16 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16
1-17
--
---_ .... -
i
I
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
1N5992A 1N5992B 1N5993 1 N5993A 1N5993B 1N5994 1N5994A 1N5994B 1 N5995 1 N5995A 1N5995B 1N5996 1N5996A 1N5996B 1N5997 1N5997A 1N5997B 1N5998 1N5998A 1N5998B 1N5998B 1N5999 1N5999A 1N5999B 1N6000 1N6000A 1N6000B 1N6001 1N6001A 1N6001B 1N6002 1N6002A 1N6002B 1N6003 1N6003A 1N6003B 1N6004 1N6004A 1N6004B 1N6005 1N6005A 1N6005B 1N6006 1N6006A 1N6006B 1N6007 1N6007A 1N6007B 1N6008 1N6008A
1N5230A 1N5230B 1N5231 1N5231A 1N5231B 1N5232 1N5232A 1N5232B 1N5234 1N5234A 1N5234B 1N5235 1N5235A 1N5235B 1N5236 1N5236A 1N5236B 1N5237 1N5237A 1N5226B 1N5237B 1N5239 1N5239A 1N5239B 1N5240 1N5240A 1N5240B 1N5241 1N5241A 1N5241B 1N5242 1N5242A 1N5242B 1N5243 1N5243A 1N5243B 1N5245 1N5245A 1N5245B 1N5246 1N5246A 1N5246B 1N5248 1N5248A 1N5248B 1N5250 1N5250A 1N5250B 1N5251 1N5251A
3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213
2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-16 2-17 2-17 2-17 2-17 2-17 2-16 2-17 2-17 2-17 2-17 2-17
2~17
2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-17 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18
1N6008B 1N6009 1N6009A 1 N6009B 1 N6010 1 N6010A 1 N6010B 1 N6011 1N6011A 1N6011B 1 N6012 1N6012A 1N6012B 1N6099 1N6100 1 N6101 1S44 1S920 1S921 1S922 1S923 2N160 2N160A 2N161 2N161A 2N162 2N162A 2N163 2N163A 2N237 2N258 2N259 2N260 2N260A 2N261 2N262 2N262A 2N263 2N264 2N327 2N327A 2N327B 2N328 2N328A 2N328B 2N329 2N329A 2N329B 2N330 2N330A
1N5251B 1N5252 1N5252A 1N5252B 1N5254 1N5254A 1N5245B 1N5256 1N5256A 1N5256B 1N5257 1N5257A 1N5257B 1N6099 1N6100 1N6101 1S44 1S920 1S921 1S922 1S923 2N2218 2N2218 2N2218 2N2218 2N2221 2N2221 2N2221 2N2221 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2907 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906
3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-213 3-206 3-218 3-218 3-219 3-220 3-220 3-220 3-220 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258
2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-18 2-5 2-15
2~15
2-8 2-8 2-8 2-8 2-8 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42
1-18
I
I I
I
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
2N332 2N332A 2N333 2N333A 2N334 2N334A 2N334B 2N335 2N335A 2N335B 2N336 2N336A 2N337 2N337A 2N338 2N338A 2N354 2N355 2N470 2N471 2N471A 2N472 2N472A 2N473 2N474 2N474A 2N475 2N475A 2N476 2N477 2N478 2N479 2N479A 2N480 2N480A 2N541 2N541A 2N542 2N542A 2N543 2N543A 2N551 2N552 2N619 2N620 2N621 2N696A 2N697 2N699 2N699A
2N2221 2N2218 2N2221 2N2218 2N2221 2N2218 2N2218 2N2221 2N2218 2N2218 2N2221 2N2218 2N2221 2N2218 2N2221 2N2218 2N2906 2N2906 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N1893 2N2218 2N2221A 2N2221 2N2221 2N2218 2N697 2N1893 2N1893
3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-258 3-258 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-234 3-236 3-238 3-236 3-236 3-236 3-221 3-234 3-234
2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-42 2-42 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-28 2-34 2-32 2-34 2-34 2-34 2-32 2-28 2-28
2N699B 2N702 2N703 2N706 2N706C 2N709 2N715 2N716 2N718A 2N721A 2N722A 2N730 2N731 2N734 2N734A 2N735 2N735A 2N736 2N736A 2N736B 2N742 2N742A 2N744A 2N745 2N746 2N747 2N748 2N749 2N751 2N752 2N756 2N756A 2N757 2N757A 2N758 2N758A 2N758B 2N759 2N759A 2N759B 2N761 2N762 2N770 2N771 2N772 2N773 2N774 2N775 2N776 2N777
2N1893 2N3946 2N3946 2N706 2N2369 2N2369A 2N2221 2N2221 2N718A 2N2906 2N2906 2N2218 2N2221 2N2484 2N2484 2N2484 2N2484 2N2484 2N2484 2N2484 2N2484 2N2484 2N2369A 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221A 2N930 2N2484 2N930 2N2484 2N930 2N2484 2N2484 2N930 2N2484 2N2484 2N930 2N930 2N3013 2N3013 2N3013 2N3013 2N3013 2N3013 2N3013 2N3013
3-234 3-282 3-282 3-222 3-246 3-246 3-236 3-236 3-224 3-258 3-258 3-236 3-236 3-251 3-251 3-251 3-251 3-251 3-251 3-251 3-251 3-251 3-246 3-236 3-236 3-236 3-236 3-236 3-236 3-238 3-226 3-251 3-226 3-251 3-226 3-251 3-251 3-226 3-251 3-251 3-226 3-226 3-262 3-262 3-262 3-262 3-262 3-262 3-262 3-262
2-28 2-32 2-32 2-24 2-24 2-24 2-34 2-34 2-38 2-42 2-42 2-34 2-34 2-28 2-28 2-28 2-28 2-28 2-28 2-28 2-28 2-28 2-24 2-34 2-34 2-34 2-34 2-34 2-34 2-32 2-30 2-28 2-30 2-28 2-30 2-28 2-28 2-30 2-28 2-28 2-30 2-30 2-24 2-24 2-24 2-24 2-24 2-24 2-24 2-24
1-19
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
2N778 2N780 2N789 2N790 2N791 2N792 2N793 2N834A 2N839 2N840 2N842 2N843 2N847 2N850 2N852 2N858 2N859 2N860 2N861 2N862 2N863 2N864 2N864A 2N865 2N865A 2N867 2N902 2N903 2N904 2N905 2N906 2N907 2N908 2N912 2N914A 2N915A 2N916A 2N916B 2N917 2N917A 2N918 2N923 2N924 2N925 2N926 2N927 2N928 2N929A 2N930 2N930A
2N3013 2N930 2N3946 2N3946 2N3946 2N3946 2N3946 2N2369A 2N3946 2N3946 2N3946 2N3946 2N2369A 2N2369A 2N2369A 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2221 2N2484 2N2369A 2N3946 2N3946 2N3946 PN918 PN918 PN918 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2484 2N930 2N930A
3-262 3-226 3-282 3-282 3-282 3-282 3-282 3-246 3-282 3-282 3-282 3-282 3-246 3-246 3-246 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-251 3-246 3-282 3-282 3-282 3-134 3-134 3-134 3-258 3-258 3-258 3-258 3-258 3-258 3-251 3-226 3-228
2-24 2-30 2-32 2-32 2-32 2-32 2-32 2-24 2-32 2-32 2-32 2-32 2"24 2-24 2-24 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-28 2-24 2-32 2-32 2-32 2-22 2-22 2-22 2-42 2-42 2-42 2-42 2-42 2-42 2-28 2-30 2-30
2N930B 2N935 2N936 2N937 2N938 2N939 2N940 2N941 2N942 2N943 2N944 2N945 2N946 2N957 2N958 2N959 2N988 2N989 2N1005 2N1006 2N1051 2N1074 2N1075 2N1076 2N1077 2N1081 2N1082 2N1105 2N1116 2N1117 2N1131A 2N1132A 2N1132B 2N1135 2N1135A 2N1139 2N1149 2N1150 2N1151 2N1152 2N1153 2N1206 2N1228 2N1229 2N1230 2N1231 2N1232 2N1233 2N1252 2N1252A
2N2484 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N2906 2N3014 2N2369A 2N2369A 2N2221 2N2221 2N3013 2N3013 2N2218 2N2218 2N2218 2N2218 2N2218 2N2221 2N2221 2N1893 2N3020 2N1893 2N2904 2N1132A 2N2904 2N2369A 2N2369A 2N3946 2N2221A 2N2221A 2N2221A 2N2221A 2N2221A 2N3020 2N2904 2N2904 2N2904 2N2904 2N2904A 2N2904A 2N3724 2N3724
3-251 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-258 3-262 3-246 3-246 3-236 3-236 3-262 3-262 3-236 3-236 3-236 3-236 3-236 3-236 3-236 3-234 3-264 3-234 3-258 3-230 3-258 3-246 3-246 3-282 3-238 3-238 3-238 3-238 3-238 3-264 3-258 3-258 3-258 3-258 3-260 3-260 3-276 3-276
2-28 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-42 2-22 2-24 2-24 2-34 2-34 2-24 2-24 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-28 2-28 2-28 2-42 2-42 2-42 2-24 2-24 2-32 2-32 2-32 2-32 2-32 2-32 2-28 2-42 2-42 2-42 2-42 2-44 2-44 2-22 2-22
1-20
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
..
2N1253 2N1253A 2N1267 2N1268 2N1269 2N1270 2N1271 2N1272 2N1335 2N1336 2N1337 2N1338 2N1339 2N1340 2N1341 2N1342 2N1369 2N1386 2N1387 2N1388 2N1389 2N1390 2N1439 2N1440 2N1441 2N1442 2N1443 2N1444 2N1474 2N1474A 2N1475 2N1491 2N1492 2N1505 2N1506 2N1506A 2N1507 2N1508 2N1509 2N1528 2N1564 2N1565 2N1566 2N1566A 2N1572 2N1573 2N1574 2N1586 2N1587 2N1588
2N3724 2N3724 2N2369A 2N2369A 2N2369A 2N2369A 2N2369A 2N2369A 2N2218A 2N2218A 2N2218A 2N2218A 2N1893 2N1893 2N1893 2N1893 2N2906 2N2222 2N2222 2N2222 2N2222A 2N2222 2N2906A 2N2906A 2N2906 2N2906 2N2906 2N3724 2N2906A 2N2906A 2N2906A 2N2218 2N2218A 2N2218 2N2218 2N2218A 2N2219 2N3020 2N3020 2N2218 2N1893 2N1893 2N1893 2N1893 2N1893 2N1893 2N1893 2N3946 2N3946 2N3946
3-276 3-276 3-246 3-246 3-246 3-246 3-246 3-246 3-238 3-238 3-238 3-238 3-234 3-234 3-234 3-234 3-258 3-240 3-240 3-240 3-242 3-240 3-260 3-260 3-258 3-258 3-258 3-276 3-260 3-260 3-260 3-236 3-238 3-236 3-236 3-238 3-240 3-264 3-264 3-236 3-234 3-234 3-234 3-234 3-234 3-234 3-234 3-282 3-282 3-282
2-22 2-22 2-24 2-24 2-24 2-24 2-24 2-24 2-32 2-32 2-32 2-32 2-28 2-28 2-28 2-28 2-42 2-34 2-34 2-34 2-32 2-34 2-44 2-44 2-42 2-42 2-42 2-22 2-44 2-44 2-44 2-34 2-32 2-34 2-34 2-32 2-34 2-28 2-28 2-34 2-28 2-28 2-28 2-28 2-28 2-28 2-28 2-32 2-32 2-32
2N1589 2N1590 2N1591 2N1592 2N1593 2N1594 2N1613 2N1613A 2N1613B 2N1623 2N1704 2N1708 2N1708A 2N1711A 2N1711B 2N1764 2N1837 2N1837A 2N1837B 2N1838 2N1840 2N1890 2N1893 2N1923 2N1941 2N1943 2N1944 2N1945 2N1946 2N1953 2N1958 2N1958A 2N1959 2N1959A 2N1992 2N2017 2N2033 2N2038 2N2039 2N2040 2N2041 2N2049 2N2086 2N2087 2N2102 2N2106 2N2107 2N2108 2N2194 2N2194A
2N3946 2N3946 2N3946 2N3946 2N3946 2N3946 2N1613 2N2218 2N3020 2N2906 2N2218 2N3013 2N3013 2N2219A 2N2219A 2N2369A 2N2218 2N2218 2N2218 2N2218 2N2218 2N1890 2N1893 2N1893 2N2218 2N3020 2N2219 2N2219 2N2219A 2N2218 2N3724 2N3724 2N3724 2N3724 2N2221 2N1893 2N3020 2N3053 2N1893 2N3053 2N1893 2N2219A 2N3020 2N3020 2N1893 2N1893 2N1893 2N1893 2N2218A 2N2218A
3-282 3-282 3-282 3-282 3-282 3-282 3-224 3-236 3-264 3-258 3-236 3-262 3-262 3-242 3-242 3-246 3-236 3-236 3-236 3-236 3-236 3-232 3-234 3-234 3-236 3-264 3-240 3-240 3-242 3-236 3-276 3-276 3-276 3-276 3-236 3-234 3-264 3-266 3-234 3-266 3-234 3-242 3-264 3-264 3-234 3-234 3-234 3-234 3-238 3-238
2-32 2-32 2-32 2-32 2-32 2-32 2-32 2-34 2-28 2-42 2-34 2-24 2-24 2-32 2-32 2-24 2-34 2-34 2-34 2-34 2-34 2-28 2-28 2-28 2-34 2-28 2-34 2-34 2-32 2-34 2-22 2-22 2-22 2-22 2-34 2-28 2-28 2-28 2-28 2-28 2-28 2-32 2-28 2-28 2-28 2-28 2-28 2-28 2-32 2-32
1-21
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
2N2194B 2N2195 2N2195B 2N2198 2N2206 2N2217 2N2218 2N2218A 2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2222B 2N2236 2N2237 2N2240 2N2241 2N2243 2N2243A 2N2270 2N2272 2N2309 2N2310 2N2312 2N2314 2N2315 2N2316 2N2317 2N2318 2N2319 2N2320 2N2349 2N2350 2N2350A 2N2351 2N2351A 2N2352 2N2352A 2N2353 2N2353A 2N2364 2N2364A 2N2369 2N2369A 2N2380 2N2380A 2N2389
2N2218A 2N2218 2N2218 2N1893 2N2369A 2N2218 2N2218 2N2218A 2N2219 2N2219A 2N2221 2N2221 2N2221A 2N2222 2N2222A 2N2222A 2N2218 2N2218 2N2218 2N2219 2N3020 2N3020 2N2270 2N2222 2N2218 2N1893 2N1893 2N2221A 2N2221 A 2N1893 2N1613 2N930 2N930 2N930 2N930 2N2222A 2N2222A 2N2221A 2N2221A 2N2221A 2N2221A 2N2221 2N2221 2N3020 2N3020 2N2369 2N2369A 2N2218A 2N2218A 2N1613
3-238 3-236 3-236 3-234 3-246 3-236 3-236 3-238 3-240 3-242 3-236 3-236 3-238 3-240 3-242 3-242 3-236 3-236 3-236 3-240 3-264 3-264 3-244 3-240 3-236 3-234 3-234 3-238 3-238 3-234 3-224 3-226 3-226 3-226 3-226 3-242 3-242 3-238 3-238 3-238 3-238 3-236 3-236 3-264 3-264 3-246 3-246 3-238 3-238 3-224
2-32 2-34 2-34 2-28 2-24 2-34 2-34 2-32 2-34 2-32 2-34 2-34 2-32 2-34 2-32 2-32 2-34 2-34 2-34 2-34 2-28 2-28 2-30 2-34 2-34 2-28 2-28 2-32 2-32 2-28 2-32 2-30 2-30 2-30 2-30 2-32 2-32 2-32 2-32 2-32 2-32 2-34 2-34 2-28 2-28 2-24 2-24 2-32 2-32 2-32
2N2393 2N2394 2N2395 2N2396 2N2397 2N2405 2N2410 2N2413 2N2433 2N2435 2N2436 2N2437 2N2438 2N2439 2N2440 2N2475 2N2476 2N2477 2N2478 2N2479 2N2484 2N2501 2N2529 2N2530 2N2531 2N2532 2N2533 2N2534 2N2537 2N2538 2N2539 2N2540 2N2586 2N2595 2N2596 2N2597 2N2601 2N2602 2N2603 2N2604 2N2605 2N2605A 2N2610 2N2615 2N2616 2N2618 2N2656 2N2673 2N2674 2N2675
2N2904 2N2904 2N2218 2N2218 2N2369A 2N2405 2N3724 2N2221 2N1613 2N3020 2N3019 2N3020 2N3020 2N3019 2N3019 2N2369A 2N3724 2N3724 2N2218A 2N2218A 2N2484 2N3014 2N930 2N930 2N930 2N930 2N930 2N930 2N3724 2N3724 2N3724 2N3724 2N2586 2N2906A 2N2906A 2N2906A 2N2906A 2N2906A 2N2906A 2N3962 2N3962 2N3962 2N930 PN918 PN918 2N2218 2N930 2N930 2N930 2N930
3-258 3-258 3-236 3-236 3-246 3-249 3-276 3-236 3-224 3-264 3-264 3-264 3-264 3-264 3-264 3-246 3-276 3-276 3-238 3-238 3-251 3-262 3-226 3-226 3-226 3-226 3-226 3-226 3-276 3-276 3-276 3-276 3-254 3-260 3-260 3-260 3-260 3-260 3-260 3-284 3-284 3-284 3-226 3-134 3-134 3-236 3-226 3-226 3-226 3-226
2-42 2-42 2-34 2-34 2-24 2-28 2-22 2-34 2-32 2-28 2-28 2-28 2-28 2-28 2-28 2-24 2-22 2-22 2-32 2-32 2-28 2-22 2-30 2-30 2-30 2-30 2-30 2-30 2-22 2-22 2-22 2-22 2-30 2-44 2-44 2-44 2-44 2-44 2-44 2-46 2-46 2-46 2-30 2-22 2-22 2-34 2-30 2-30 2-30 2-30
1-22
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
2N2676 2N2677 2N2678 2N2692 2N2693 2N2694 2N2695 2N2709 2N2710 2N2711 2N2712 2N2713 2N2714 2N2729 2N2787 2N2788 2N2789 2N2790 2N2791 2N2792 2N2831 2N2837 2N2861 2N2862 2N2863 2N2864 2N2886 2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N2909 2N2926 2N2938 2N2939 2N2940 2N2954 2N2960 2N2961 2N3013 2N3014 2N3019 2N3020 2N3053 2N3053A
2N930 2N930 2N930 2N930 2N930 2N930 2N2906 2N2906 2N2710 2N4123 2N4124 2N4123 2N4124 PN918 2N2218A 2N2218A 2N2219A 2N2221A 2N2221A 2N2222A 2N2221 2N2906A 2N3962 2N3962 2N2218 2N2218 2N2218A 2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N2221A 2N4124 2N2369A 2N3020 2N3019 2N3014 2N2219 2N2219 2N3013 2N3014 2N3019 2N3020 2N3053 2N3020
3-226 3-226 3-226 3-226 3-226 3-226 3-258 3-258 3-256 3-291 3-291 3-291 3-291 3-134 3-238 3-238 3-242 3-238 3-238 3-242 3-236 3-260 3-284 3-284 3-236 3-236 3-238 3-258 3-260 3-258 3-260 3-258 3-260 3-258 3-260 3-238 3-291 3-246 3-264 3-264 3-262 3-240 3-240 3-262 3-262 3-264 3-264 3-266 3-264
2-30 2-30 2-30 2-30 2-30 2-30 2-42 2-42 2-22 2-34 2-36 2-34 2-36 2-22 2-32 2-32 2-32 2-32 2-32 2-32 2-34 2-44 2-46 2-46 2-34 2-34 2-32 2-42 2-44 2-42 2-44 2-42 2-44 2-42 2-44 2-32 2-36 2-24 2-28 2-28 2-22 2-34 2-34 2-24 2-22 2-28 2-28 2-28 2-28
2N3056 2N3056A 2N3057 2N3057A 2N3077 2N3081 2N3107 2N3108 2N3109 2N3117 2N3119 2N3122 2N3123 2N3210 2N3211 2N3241 2N3241A 2N3242 2N3242A 2N3246 2N3247 2N3251 2N3253 2N3374 2N3390 2N3393 2N3395 2N3396 2N3397 2N3398 2N3402 2N3404 2N3405 2N3439 2N3440 2N3451 2N3464 2N3485 2N3485A 2N3486 2N3486A 2N3508 2N3509 2N3510 2N3512 2N3546 2N3547 2N3548 2N3549
2N3020 2N3020 2N3019 2N3019 2N2484 2N3020 2N3107 2N3108 2N3109 2N3117 2N3020 2N2219 2N2219 2N3013 2N3013 2N2222 2N2222 2N2222 2N2222 2N2484 2N2484 PN3251 2N3253 2N3020 PN3565 MPS3393 MPS3392 MPS3393 2N4123 2N4123 2N4124 PN3693 PN3694 2N3439 2N3440 2N4208 2N2219A 2N2906 2N2906A 2N2907 2N2907A 2N2369A 2N2369A 2N3013 2N3724 2N4208 2N3962 2N3962 2N3962
3-264 3-264 3-264 3-264 3-251 3-264 3-267 3-267 3-267 3-251 3-264 3-240 3-240 3-262 3-262 3-240 3-240 3-240 3-240 3-251 3-251 3-269 3-271 3-264 3-137 3-95 3-95 3-95 3-291 3-291 3-291 3-154 3-154 3-273 3-273 3-295 3-242 3-258 3-260 3-258 3-260 3-246 3-246 3-262 3-276 3-295 3-284 3-284 3-284
2-28 2-28 2-28 2-28 2-28 2-28 2-28 2-28 2-28 2-28 2-28 2-34 2-34 2-24 2-24 2-34 2-34 2-34 2-34 2-28 2-28 2-42 2-22 2-28 2-36 2-36 2-36 2-36 2-34 2-34 2-36 2-30 2-30 2-49 2-49 2-26 2-32 2-42 2-44 2-42 2-44 2-24 2-24 2-24 2-22 2-26 2-46 2-46 2-46
1-23
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
2N3550 2N3554 2N3563 2N3565 2N3566 2N3567 2N3569 2N3576 2N3579 2N3580 2N3581 2N3582 2N3605 2N3605A 2N3606 2N3606A 2N3607 2N3638 2N3638A 2N3639 2N3640 2N3641 2N3642 2N3643 2N3644 2N3645 2N3646 2N3647 2N3648 2N3671 2N3672 2N3673 2N3693 2N3694 2N3700 2N3701 2N3703 2N3724 2N3725 2N3735 2N3736 2N3737 2N3798 2N3798A 2N3825 2N3826 2N3827 2N3828 2N3830 2N3831
2N3962 2N3724 PN3563 PN3565 PN3566 PN3567 PN3569 2N4209 2N3962 2N3962 2N3962 2N3962 2N5769 2N5769 2N5769 2N5769 2N5769 PN3638 PN3638A PN3639 PN3640 PN3641 PN3642 PN3643 PN3644 PN3645 PN3646 2N3013 2N3013 2N2905A 2N2907A 2N2907A PN3693 PN3694 2N3700 2N3701 MPS3703 2N3724 2N3725 2N3725 2N4014 2N4014 2N3962 2N3962 2N4400 PN3693 PN3694 PN3693 2N2218A 2N2218A
3-284 3-276 3-134 3-137 3-138 3-140 3-140 3-295 3-284 3-284 3-284 3-284 3-246 3-246 3-246 3-246 3-246 3-142 3-142 3-144 3-144 3-147 3-147 3-147 3-150 3-150 3-152 3-262 3-262 3-260 3-260 3-260 3-154 3-154 3-274 3-274 3-97 3-276 3-276 3-276 3-276 3-276 3-284 3-284 3-301 3-154 3-154 3-154 3-238 3-238
2-46 2-22 2-22 2-36 2-34 2-32 2-32 2-26 2-46 2-46 2-46 2-46 2-24 2-24 2-24 2-24 2-24 2-40 2-40 2-26 2-26 2-34 2-30 2-34 2-44 2-44 2-24 2-24 2-24 2-44 2-44 2-44 2-30 2-30 2-28 2-28 2-22 2-22 2-22 2-22 2-22 2-46 2-46 2-32 2-30 2-30 2-30 2-32 2-32
2N3843 2N3843A 2N3844 2N3844A 2N3845 2N3845A 2N3854 2N3854A 2N3855 2N3855A 2N3856 2N3856A 2N3858A 2N3859A 2N3877 2N3877A 2N3900 2N3900A 2N3901 2N3903 2N3904 2N3905 2N3906 2N3946 2N3962 2N3963 2N3973 2N3974 2N3975 2N3976 2N3981 2N3982 2N4000 2N4013 2N4014 2N4030 2N4031 2N4032 2N4033 2N4036 2N4037 2N4062 2N4086 2N4087 2N4087A 2N4121 2N4122 2N4123 2N4124 2N4125
2N4123 2N4123 2N4123 2N4123 2N4123 2N4123 2N4123 2N4123 2N4123 2N4123 2N4124 2N4124 2N5550 2N5550 2N5550 2N5550 2N5210 2N5210 2N5088 2N3903 2N3904 2N3905 2N3906 2N3946 2N3962 2N3962 2N4400 2N4401 2N4400 2N4401 2N2218 2N2218 2N3019 2N4013 2N4014 2N4030 2N4031 2N4032 2N4033 2N4036 2N4037 MPS6518 MPS6514 MPS6514 MPS6515 PN4121 PN4122 2N4123 2N4124 2N4125
3-291 3-291 3-291 3-291 3-291 3-291 3-291 3-291 3-291 3-291 3-291 3-291 3-333 3-333 3-333 3-333 3-313 3-313 3-311 3-278 3-278 3-280 3-280 3-282 3-284 3-284 3-301 3-301 3-301 3-301 3-236 3-236 3-264 3-276 3-276 3-286 3-286 3-286 3-286 3-289 3-289 3-103 3-102 3-102 3-102 3-156 3-156 3-291 3-291 3-293
2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-34 2-36 2-36 2-26 2-26 2-26 2-26 2-30 2-30 2-34 2-32 2-32 2-42 2-42 2-32 2-46 2-46 2-32 2-32 2-32 2-32 2-34 2-34 2-28 2-22 2-22 2-46 2-46 2-46 2-46 2-46 2-42 2-36 2-36 2-36 2-42 2-42 2-34 2-36 2-40
1-24

t
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
2N4126 2N4140 2N4141 2N4142 2N4143 2N4208 2N4209 2N4227 2N4228 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4248 2N4249 2N4250 2N4253 2N4256 2N4258 2N4274 2N4275 2N4284 2N4285 2N4286 2N4287 2N4288 2N4289 2N4294 2N4295 2N4354 2N4355 2N4356 2N4400 2N4401 2N4402 2N4403 2N4404 2N4405 2N4406 2N4407 2N4409 2N4410 2N4412 2N4412A 2N4413 2N4413A 2N4414
2N4126 2N4400 2N4401 2N4402 2N4403 2N4208 2N4209 2N4400 2N4402 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 PN4248 PN4249 PN4250 PN918 2N3904 PN4258 PN4274 PN4275 2N5086 2N5086 MPS6515 PN3694 MPS6518 2N5086 2N5769 2N5769 PN4354 PN4355 PN4356 2N4400 2N4401 2N4402 2N4403 2N4031 2N4033 2N4031 2N4033 2N4409 2N4410 2N3962 2N3962 2N3962 2N3962 2N3962
3-293 3-301 3-301 3-303 3-303 3-295 3-295 3-301 3-303 3-297 3-297 3-297 3-299 3-299 3-299 3-158 3-158 3-158 3-134 3-278 3-161 3-163 3-163 3-309 3-309 3-102 3-154 3-103 3-309 3-246 3-246 3-165 3-165 3-165 3-301 3-301 3-303 3-303 3-286 3-286 3-286 3-286 3-305 3-305 3-284 3-284 3-284 3-284 3-284
2-40 2-32 2-32 2-42 2-42 2-26 2-26 2-32 2-42 2-49 2-49 2-49 2-49 2-49 2-49 2-42 2-44 2-42 2-22 2-32 2-26 2-24 2-24 2-44 2-44 2-36 2-30 2-44 2-24 2-24 2-44 2-44 2-46 2-32 2-32 2-42 2-42 2-46 2-46 2-46 2-46 2-30 2-28 2-46 2-46 2-46 2-46 2-46
2N4414A 2N4415 2N4415A 2N4418 2N4419 2N4420 2N4421 2N4422 2N4423 2N4436 2N4437 2N4444 2N4449 2N4450 2N4452 2N4872 2N4873 2N4888 2N4889 2N4890 2N4896 2N4916 2N4917 2N4943 2N4944 2N4951 2N4952 2N4953 2N4954 2N4964 2N4969 2N4970 2N4971 2N4972 2N4994 2N4995 2N5026A 2N5055 2N5056 2N5057 2N5086 2N5087 2N5088 2N5089 2N5106 2N5107 2N5128 2N5130 2N5133
2N3962 2N3962 2N3962 2N5772 2N5772 2N5772 2N5772 2N5772 2N5772 PN3641 PN3643 1N4148 2N2369A 2N2222 2N2907 2N4208 2N2369A PN4888 PN4889 2N2904 2N4896 PN4916 PN4917 2N3019 PN3567 2N2221 2N2222 2N2222 2N2221 PN4248 2N4400 2N4401 2N4402 2N4403 PN3693 PN3694 MPSA14 PN4258 2N4209 2N4209 2N5086 2N5087 2N5088 2N5089 2N2219 2N2222 PN5128 PN5130 PN5133
3-284 3-284 3-284 3-152 3-152 3-152 3-152 3-152 3-152 3-147 3-147 3-201 3-246 3-240 3-258 3-295 3-246 3-168 3-168 3-258 3-307 3-170 3-170 3-264 3-140 3-236 3-240 3-240 3-236 3-158 3-301 3-301 3-303 3-303 3-154 3-154 3-114 3-161 3-295 3-295 3-309 3-309 3-311 3-311 3-240 3-240 3-172 3-174 3-176
2-46 2-46 2-46 2-24 2-24 2-24 2-24 2-24 2-24 2-34 2-34 2-3 2-24 2-34 2-42 2-26 2-24 2-64 2-46 2-42 2-49 2-40 2-40 2-28 2-32 2-34 2-34 2-34 2-34 2-42 2-32 2-32 2-42 2-42 2-30 2-30 2-38 2-26 2-26 2-26 2-44 2-44 2-34 2-36 2-34 2-34 2-38 2-22 2-38
1-25
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
2N5134 2N5135 2N5136 2N5137 2N5138 2N5139 2N5140 2N5141 2N5142 2N5143 2N5145 2N5174 2N5175 2N5209 2N5210 2N5220 2N5223 2N5224 2N5225 2N5226 2N5227 2N5228 2N5233 2N5234 2N5249 2N5249A 2N5308A 2N5309 2N5310 2N5311 2N5320 2N5323 2N5336 2N5354 2N5355 2N5365 2N5368 2N5369 2N5371 2N5372 2N5373 2N5375 2N5376 2N5377 2N5378 2N5379 2N5380 2N5381 2N5382 2N5383
PN5134 PN5135 PN5136 PN5137 PN5138 PN5139 PN3639 PN3639 PN5142 PN5143 2N3724 2N4410 2N5830 2N5209 2N5210 2N5220 2N5223 2N5224 2N5225 2N5226 2N5227 2N5228 2N5961 2N5210 2N5962 2N5962 MPSA14 2N5209 2N5209 2N5210 2N5320 2N5323 2N5336 MPS3638 MPS3638A MPS3638 2N4400 2N4401 2N4400 2N4402 2N4403 2N4402 2N5961 2N5961 PN4249 PN4248 2N3903 2N3904 2N3905 2N3906
3-177 3-179 3-179 3-179 3-182 3-184 3-144 3-144 3-186 3-186 3-276 3-305 3-340 3-313 3-313 3-315 3-316 3-318 3-320 3-320 3-322 3-323 3-343 3-313 3-343 3-343 3-114 3-313 3-313 3-313 3-325 3-325 3-327 3-142 3-142 3-142 3-301 3-301 3-301 3-303 3-303 3-303 3-343 3-343 3-158 3-158 3-278 3-278 3-280 3-280
2-24 2-36 2-36 2-36 2-40 2-38 2-26 2-26 2-38 2-38 2-22 2-28 2-28 2-30 2-30 2-24 2-36 2-24 2-36 2-40 2-40 2-26 2-28 2-30 2-30 2-30 2-38 2-30 2-30 2-30 2-49 2-49 2-49
2-32 2-32 2-32 2-42 2-42 2-42 2-28 2-28 2-44 2-42 2-32 2-32 2-42 2-42
2N5400 2N5401 2N5415 2N5416 2N5418 2N5419 2N5420 2N5447 2N5448 2N5449 2N5450 2N5525 2N5550 2N5551 2N5679 2N5680 2N5681 2N5682 2N5763 2N5769 2N5771 2N5772 2N5810 2N5814 2N5815 2N5816 2N5817 2N5818 2N5819 2N5821 2N5823 2N5826 2N5827 2N5828 2N5830 2N5831 2N5833 2N5855 2N5857 2N5859 2N5860 2N5861 2N5864 2N5865 2N5961 2N5962 2N5965 2N5998 2N5999 2N6000
2N5400 2N5401 2N5415 2N5416 2N4400 2N4401 PN3566 MPS3702 MPS3703 MPS3704 MPS3705 MPSA13 2N5550 MPS5551 2N5679 2N5680 2N5681 2N5682 2N2907A 2N5769 2N5771 2N5772 MPS6561 2N3903 2N3904 2N3904 2N3905 2N3906 2N3906 PN5855 PN4355 MPS6514 MPS6515 2N5962 2N5830 2N5831 2N5833 PN5855 PN5857 2N3724 2N3724 2N3725 2N4031 2N4030 2N5961 2N5962 PN5965 2N5961 2N5087 2N4401
3-329 3-329 3-331 3-331 3-301 3-301 3-138 3-97 3-97 3-99 3-99 3-114 3-333 3-333 3-335 3-335 3-335 3-335 3-260 3-246 3-338 3-152 3-107 3-278 3-278 3-278 3-280 3-280 3-280 3-190 3-165 3-102 3-102 3-343 3-340 3-340 3-340 3-190 3-190 3-276 3-276 3-276 3-286 3-286 3-343 3-343 3-192 3-343 3-309 3-301
2-46 2-46 2-49 2-49 2-32 2-32 2-34
2-34 2-34 2-38 2-26 2-28 2-49 2-49 2-49 2-49 2-44 2-24 2-26 2-24 2-36 2-32 2-32 2-32 2-42 2-42 2-42 2-44 2-44 2-36 2-36 2-30 2-28 2-28 2-26 2-44 2-22 2-22 2-22 2-46 2-46 2-28 2-30 2-26 2-28 2-44 2-32
1-26
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
2N6001 2N6004 2N6008 2N6009 2N6010 2N6011 2N6221 2N6223 2N6224 2N6225 2N6515 A5T2192 A5T2222 A5T2243 A5T2604 A5T2605 A5T2907 A5T3391 A5T3391A A5T3392 A5T3504 A5T3505 A5T3565 A5T3638 A5T3638A A5T3644 A5T3645 A5T3903 A5T3904 A5T3905 A5T3906 A5T4026 A5T4027 A5T4028 A5T4029 A5T4058 A5T4059 A5T4060 A5T4061 A5T4123 A5T4124 A5T4125 A5T4126 A5T4248 A5T4249 A5T4250 A5T4402 A5T4403 A5T4409 A5T4410
2N4402 2N4402 2N5961 2N5087 2N4401 2N4402 2N5831 PN3645 2N5962 PN4250A MPS6515 PN3569 PN2222 MPSA06 PN4248 PN4249 PN2907 2N5961 2N5961 MPS3392 PN3644 PN3645 PN3565 MPS3638 MPS3638A PN3644 PN3645 2N3903 2N3904 2N3905 2N3906 PN4356 PN4356 PN4355 PN4355 2N5086 2N3905 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 PN4248 PN4249 PN4250 2N4402 2N4403 2N4409 2N4410
3-303 3-303 3-343 3-309 3-301 3-303 3-340 3-150 3-343 3-158 3-102 3-140 3-240 3-110 3-158 3-158 3-258 3-343 3-343 3-95 3-150 3-150 3-137 3-142 3-142 3-150 3-150 3-278 3-278 3-280 3-280 3-165 3-165 3-165 3-165 3-309 3-280 3-280 3-280 3-291 3-291 3-293 3-293 3-158 3-158 3-158 3-303 3-303 3-305 3-305
2-42 2-42 2-28 2-44 2-32 2-42 2-28 2-44 2-30 2-44 2-36 2-32 2-34 2-42 2-44 2-42 2-28 2-28 2-36 2-44 2-44 2-36
2-44 2-44 2-32 2-32 2-42 2-42 2-46 2-46 2-44 2-44 2-44 2-42 2-42 2-42 2-34 2-36 2-40 2-40 2-42 2-44 2-42 2-42 2-42 2-30 2-28
A5T5058 A5T5059 A5T5086 A5T5087 A5T5172 A5T5209 A5T5210 A5T5220 A5T5223 A5T5225 A5T5226 A5T5227 A5T5400 A5T5401 A5T5550 A5T5551 A7T3391 A7T3391A A7T3392 A7T5172 A8T3391 A8T3391A A8T3392 A8T3702 A8T3703 A8T3704 A8T3705 A8T4026 A8T4027 A8T4028 A8T4029 A8T4058 A8T4059 A8T4060 A8T4061 A8T5172 AA112 AA113 AA114 AA116 AA129 AA131 AA137 AA138 AA139 AAY10 AAY48 AAZ13 AAZ18
PE7058 PE7059 2N5086 2N5087 MPS5172 2N5209 2N5210 2N5220 2N5223 2N5225 2N5226 2N5227 2N5400 2N5401 2N5550 MPS5551 2N5961 2N5961 MPS3392 MPS5172 2N5961 2N5961 MPS3392 MPS3702 MPS3703 MPS3704 MPS3705 PN4356 PN4356 PN4355 PN4355 2N5086 2N3905 2N3905 2N3906 MPS5172 FDH999 BA128 BA130 BA130 BA130 FDH900 BA130 BA130 BA129 BA130 BA130 BA130 BA130
3-130 3-130 3-309 3-309 3-101 3-313 3-313 3-315 3-316 3-320 3-320 3-322 3-329 3-329 3-333 3-333 3-343 3-343 3-95 3-101 3-343 3-343 3-95 3-97 3-97 3-99 3-99 3-165 3-165 3-165 3-165 3-309 3-280 3-280 3-280 3-101 3-56 3-3 3-3 3-3 3-3 3-56 3-3 3-3 3-16 3-3 3-3 3-3 3-3
2-26 2-26 2-44 2-44 2-36 2-30 2-30 2-38 2-36 2-36 2-40 2-40 2-46 2-46 2-26 2-28 2-28 2-28 2-36 2-36 2-28 2-28 2-36
2-34 2-34 2-46 2-46 2-44 2-44 2-44 2-42 2-42 2-42 2-36 2-8 2-8 2-8 2-8 2-8 2-4 2-8 2-8 2-8 2-8 2-8 2-8 2-8
1-27
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
BA127 BA128 BA130 BA136 BA152 BA154 BA165 BA166 BA167 BA192 BA193 BA194 BA197 BA198 BA200 BA217 BA218 BA316 BA317 BA318 BAS13 BAS36 BAV17 BAV18 BAV19 BAV20 BAV21 BAV24 BAV50 BAV68 BAV69 BAW10 BAW11 BAW12 BAW16 BAW17 BAW18 BAW24 BAW25 BAW26 BAW33 BAW43 BAW45 BAW46 BAW47 BAW48 BAW49 BAW50 BAW51
BA128 BA128 BA130 BA128 FDH900 FDH900 FDH900 BA130 BA130 FDH400 FDH400 FDH400 FDH400 FDH400 BA218 BA217 BA218 FDH900 FDH900 FDH900 FDH400 FA2320E BAV17 BAV18 BAV19 BAV20 BAV21 BAY74 FSA2510M BAY72 FDH400 BAY74 BAY72 FDH444 FDH300 FDH300 FDH300 BAY74 FDH600 FDH600 BAY72 BAY73 BAY71 BAY72 BAY72 BAY71 BAY73 FDH400 BAY72
3-3 3-3 3-3 3-3 3-56 3-56 3-56 3-3 3-3 3-53 3-53 3-53 3-53 3-53 3-4 3-4 3-4 3-56 3-56 3-56 3-53 3-49 3-6 3-6 3-6 3-6 3-6 3-17 3-87 3-15 3-53 3-17 3-15 3-53 3-52 3-52 3-52 3-17 3-54 3-54 3-15 3-16 3-14 3-15 3-15 3-14 3-16 3-53 3-15
2-8 2-8 2-8 2-8 2-4 2-4 2-4 2-8 2-8 2-6 2-6 2-6 2-6 2-6 2-8 2-8 2-8 2-4 2-4 2-4 2-6 2-8 2-8 2-7 2-6 2-6 2-4 2-14 2-7 2-6 2-4 2-7 2-6 2-5 2-5 2-5 2-4 2-3 2-3 2-7 2-5 2-3 2-7 2-7 2-3 2-5 2-6 2-7
BAW52 BAW53 BAW54 BAW55 BAW62 BAW75 BAW76 BAW77 BAX12 BAX13 BAX15 BAX16 BAX17 BAX20 BAX21 BAX33 BAX34 BAX35 BAX37 BAX38 BAX39 BAX40 BAX41 BAX42 BAX43 BAX44 BAX83 BAX84 BAX85 BAX86A BAX86B BAX87 BAX89B BAX89H BAX90A BAX90B BAX91A BAX91B BAX91C BAX92 BAX93 BAX94 BAY17 BAY18 BAY19 BAY20 BAY38 BAY41 BAY42
FDH400 BAY74 BAY74 BAY72 1N4448 BAW75 BAW76 BAY72 BAY74 BAX13 FDH400 BAX16 FDH400 FDH444 FDH444 FA2310E FA2310E FA2310E FA2320E FA2320E FA4310E FA4310E FA4310E FA4320E FA4320E FA4320E BAY72 BAY71 BAY71 BAY71 BAY71 BAY71 BAY71 BAY71 BAY71 BAY71 BAY71 BAY71 BAY71 BAY71 BAY71 BAY71 BAY72 BAY72 BAY72 FDH400 BAY71 BAY71 BAY71
3-53 3-17 3-17 3-15 3-201 3-11 3-11 3-15 3-17 3-12 3-53 3-13 3-53 3-53 3-53 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-15 3-14 3-14 3-14 3-14 3-14 3-14 3-14 3-14 3-14 3-14 3-14 3-14 3-14 3-14 3-14 3-15 3-15 3-15 3-53 3-14 3-14 3-14
2-6 2-4 2-4 2-7 2-3 2-7 2-4 2-3 2-6 2-8 2-6 2-6 2-6
2-7 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-3 2-7 2-7 2-7 2-6 2-3 2-3 2-3
1-28
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
BAY43 BAY60 BAY61 BAY63 BAY68 BAY69 BAY71 BAY72 BAY73 BAY74 BAY80 BAY82 BAY93 BAY94 BAY95 BC132 BC280 BC284 BCY42 BCY43 BCY78 BCY78VII BCY79 BCY79VII BFR10 BFR11 BFR16 BFR17 BFR20 BFR21 BFR22 BFR23 BFR24 BFR88 BFR89 BFW20 BFW29 BFW31 BFW32 BFW33 BFW66 BFW68 BFX17 BFX29 BFX30 BFX43 BFX45 BFX50 BFX51
1N4148 BAY74 BAY74 BAY74 BAY74 BAY74 BAY71 BAY72 BAY73 BAY74 BAY80 BAY82 BAY71 BAY71 BAY71 PN3565 2N930 2N930 2N2221 2N2222 2N3962 2N3962 2N3962 2N3962 2N2218A 2N2221A 2N2484 2N3117 2N3109 2N3108 2N1893 2N4031 2N4032 MPSA42 MPSA42 2N3962 2N2219A 2N2907 2N2222 2N1893 2N2219A 2N2222A 2N3725 2N2905A 2N2905A 2N2369 2N2222 2N2222A 2N2221A
3-201 3-17 3-17 3-17 3-17 3-17 3-14 3-15 3-16 3-17 3-15 3-18 3-14 3-14 3-14 3-137 3-226 3-226 3-236 3-240 3-284 3-284 3-284 3-284 3-238 3-238 3-251 3-251 3-267 3-267 3-234 3-286 3-286 3-119 3-119 3-284 3-242 3-258 3-240 3-234 3-242 3-242 3-275 3-260 3-260 3-246 3-240 3-242 3-238
2-3 2-4 2-4 2-4 2-4 2-4 2-3 2-7 2-5 2-4 2-7 2-3 2-3 2-3 2-3 2-36 2-30 2-30 2-34 2-34 2-46 2-46 2-46 2-46 2-32 2-32 2-28 2-28 2-32 2-28 2-28 2-46 2-46 2-26 2-26 2-46 2-32 2-42 2-34 2-28 2-32 2-32 2-22 2-44 2-44 2-24 2-34 2-32 2-32
BFX52 BFX63 BFX69 BFX75 BFX84 BFX85 BFX86 BFX87 BFX88 BFX93 BFX93A BFX94 BFX95 BFX96 BFX97 BFY72 BFY77 BSC60 BSS10 BSS11 BSS30 BSS31 BSS32 BSV77 BSV90 BSW11 BSW12 BSW19 BSW21 BSW22 BSW23 BSW24 BSW41 BSW65 BSW66 BSW70 BSW72 BSW73 BSW74 BSW75 BSW82 BSW83 BSW84 BSW85 BSW88 BSW89 BSX36 BSX48 BSX49
2N2222A 2N3962 2N1613 2N1132A 2N3108 2N3107 2N3109 2N2904A 2N2904 2N930 2N2484 2N2221 2N2222 2N2218 2N2219 2N2218A 2N930 2N3724 2N3013 2N2369A 2N1893 2N3019 2N1893 2N3725 2N2369 PN3646 PN3646 2N3014 2N2906 2N2907 2N2904 2N2906 2N2221 2N3019 2N3019 2N2222 2N2906 2N2907 2N2906 2N2907 2N2221 2N2222 2N2221 2N2222 PN3694 PN3694 2N2906 2N4013 2N4013
3-242 3-284 3-224 3-230 3-267 3-267 3-267 3-260 3-258 3-226 3-251 3-236 3-240 3-236 3-240 3-238 3-226 3-276 3-262 3-246 3-234 3-264 3-234 3-276 3-246 3-152 3-152 3-262 3-258 3-258 3-258 3-258 3-236 3-264 3-264 3-240 3-258 3-258 3-258 3-258 3-236 3-240 3-236 3-240 3-154 3-154 3-258 3-276 3-276
2-32 2-46 2-32 2-42 2-28 2-28 2-32 2-44 2-42 2-30 2-28 2-34 2-34 2-34 2-34 2-32 2-30 2-22 2-24 2-24 2-28 2-28 2-28 2-22 2-24 2-24 2-24 2-22 2-44 2-42 2-42 2-44 2-34 2-28 2-28 2-34 2-42 2-42 2-42 2-42 2-34 2-34 2-34 2-34 2-30 2-30 2-42 2-22 2-22
1-29
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
BSX59 BSX61 BSX76 BSX77 BSX78 BSX93 BSY51 BSY53 BSY55 BSY56 BSY78 BSY95 BSY95A 016Pl 029El 029E2 029E4 029E5 029E6 029E7 029E9 029El0 029Fl 029F2 029F3 029F4 029F5 029F6 029F7 032Hl 032H4 032Jl 032J2 032J3 032Ll 032L2 032L4 032L5 032Pl 032P2 032P3 032P4 032S1 032S2 032S5 032S6 032S9 032Vl 032V2
2N3725 2N3725 2N2369 2N2369 2N2369 2N2369 2N697 2N1613 2N1893 2N3019 2N2222 2N2369 2N2369 MPSA12 MPS3638 MPS3638A 2N4402 2N4402 2N4403 2N4403 PN3645 PN3645 MPS3638 MPS3638A PN4250 2N5086 PN3645 PN3645 PN4250A MPSA05 MPSA06 MPSA55 PN4355 MPSA56 MPSA13 MPSA14 MPSA13 MPSA14 PN3693 PN3693 PN3694 PN3694 2N5089 2N5962 2N5962 2N5962 2N5961 PE7058 PE7059
3-276 3-276 3-246 3-246 3-246 3-246 3-221 3-224 3-234 3-264 3-240 3-246 3-246 3-113 3-142 3-142 3-303 3-303 3-303 3-303 3-150 3-150 3-142 3-142 3-158 3-309 3-150 3-150 3-158 3-110 3-110 3-121 3-165 3-121 3-114 3-114 3-114 3-114 3-154 3-154 3-154 3-154 3-311 3-343 3-343 3-343 3-343 3-130 3-130
2-22 2-22 2-24 2-24 2-24 2-24 2-32 2-32 2-28 2-28 2-34 2-24 2-24 2-38
2-42 2-42 2-42 2-42 2-44 2-44
2-42 2-44 2-44 2-44 2-44 2-34 2-34 2-44 2-38 2-38 2-38 2-38 2-30 2-30 2-30 2-30 2-36 2-30 2-30 2-30 2-28 2-26 2-26
032V3 033021 033022 033023 033024 033025 033026 033027 033028 033029 033E30 OA1701 OA1702 OA1703 OA1704 EN697 EN706 EN708 EN744 EN914 EN915 EN916 EN918 EN930 ENl132 EN2219 EN2369A EN2484 EN2905 EN3009 EN3011 EN3013 EN3014 EN3502 EN3962 EN5172 FA231 0 FA2311 FA2312 FA2313 FA2320 FA2321 FA2322 FA2323 FA2324 FA2325 FA2330 FA2331 FA2332
PE7059 MPSA05 MPSA05 MPSA05 MPSA05 MPSA05 MPSA05 2N4401 MPSA06 MPSA06 MPSA06 1N4148 1N4148 1N4148 lN4148 PN3641 MPS706 PN4275 PN4275 PN3646 2N3903 2N4123 PN918 PN930 PN3638 PN2219 PN2369A PN2484 PN2905 PN3646 PN4275 PN3646 PN3646 PN3644 PN4248 MPS5172 FA2310 FA2311 FA2312 FA2313 FA2320 FA2321 FA2322 FA2323 FA2324 FA2325 FA2330 FA2331 FA2332
3-130 3-110 3-110 3-110 3-110 3-110 3-110 3-301 3-110 3-110 3-110 3-201 3-201 3-201 3-201 3-147 3-222 3-163 3-163 3-152 3-278 3-291 3-134 3-226 3-142 3-240 3-246 3-251 3-258 3-152 3-163 3-152 3-152 3-150 3-158 3-101 3-49 3-49 3-49 3-49 3c 49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49
2-26 2-34 2-34 2-34 2-34 2-34 2-34 2-32 2-34 2-34 2-34 2-3 2-3 2-3 2-3 2-34 2-24 2-24 2-24 2-24 2-32 2-34 2-22 2-30 2-40 2-34 2-24 2-28 2-42 2-24 2-24 2-24 2-24 2-44 2-42 2-36
1-30
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
FA2333 FA2334 FA2335 FA2360 FA2361 FA3310 FA3311 FA3312 FA3313 FA3320 FA3321 FA3322 FA3323 FA3324 FA3325 FA3330 FA3331 FA3332 FA3333 FA3334 FA3335 FA3360 FA3361 FA431 0 FA4311 FA4312 FA4313 FA4320 FA4321 FA4322 FA4323 FA4324 FA4325 FA4330 FA4331 FA4332 FA4333 FA4334 FA4335 FA4360 FA4361 FD300 FD333 FD400 FD444 FD600 FD666 FD700 FD777
FA2333 FA2334 FA2335 FA2360 FA2361 FA3310 FA3311 FA3312 FA3313 FA3320 FA3321 FA3322 FA3323 FA3324 FA3325 FA3330 FA3331 FA3332 FA3333 FA3334 FA3335 FA3360 FA3361 FA431 0 FA4311 FA4312 FA4313 FA4320 FA4321 FA4322 FA4323 FA4324 FA4325 FA4330 FA4331 FA4332 FA4333 FA4334 FA4335 FA4360 FA4361 FDH300 FDH333 FDH400 FDH444 FDH600 FDH666 FD700 FD777
3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-49 3-52 3-52 3-53 3-53 3-54 3-54 3-55 3-55
2-5 2-5 2-6 2-6 2-3 2-4 2-4 2-4
FD1389 FD2389 FD3389 FD6389 FDH300 FDH333 FDH400 FDH444 FDH600 FDH666 FDH900 FDH999 FDH1000 FDN400 FDN444 FDN600 FDN666 FDN700 FDN777 FJT1100 FJT1101 FPQ2222 FPQ2907 FPQ3724 FPQ3725 FPQ3904 FPQ3906 FPQ6426 FPQ6502 FPQ6700 FPT100 FPT100A FPT100B FPT110 FPT110A FPT110B FPT120A FPT120B FPT120C FPT130 FPT130A FPT130B FPT320 FSA 1410M FSA1411M FSA2002M FSA2003M FSA2500M FSA2501M
FD1389 FD2389 FD3389 FD6389 FDH300 FDH333 FDH400 FDH444 FDH600 FDH666 FDH900 FDH999 FDH1000 FDH400 FDH444 FDH600 FDH666 FD700 FD777 FJT1100 FJT1101 FPQ2222 FPQ2907 FPQ3724 FPQ3725 FPQ3904 FPQ3906 FPQ6426 FPQ6502 FPQ6700 FPT100 FPT100A FPT100B FPT110 FPT110A FPT110B FPT120A FPT120B FPT120C FPT130 FPT130A FPT130B FPT320 FSA1410M FSA1411M FSA2002M FSA2003M FSA2500M FSA2501M
3-49 3-49 3-49 3-49 3-52 3-52 3-53 3-53 3-54 3-54 3-56 3-56 3-57 3-53 3-53 3-54 3-54 3-55 3-55 3-62 3-62 3-63 3-64 3-65 3-65 3-67 3-69 3-71 3-73 3-75 3-77 3-77 3-77 3-77 3-77 3-77 3-79 3-79 3-79 3-79 3-79 3-79 3-81 3-82 3-82 3-82 3-82 3-84 3-84
2-5 2-5 2-6 2-6 2-3 2-4 2-4 2-4 2-4 2-6 2-6 2-3 2-4 2-3 2-3 2-5 2-21 2-21 2-21 2-21 2-21 2-21 2-21 2-21 2-21 2-48 2-48 2-48 2-48 2-48 2-48 2-48 2-48 2-48 2-48 2-48 2-48 2-48 2-13 2-13 2-13 2-13 2-13 2-13
1-31
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
FSA2501 P FSA2502M FSA2503M FSA2503P FSA2504M FSA2509M FSA2509P FSA2510M FSA2510P FSA2563M FSA2563P FSA2564M FSA2564P FSA2565M FSA2565P FSA2566M FSA2566P FSA2619M FSA2619P FSA2620M FSA2620P FSA2621M FSA2702 FSA2703M FSA2704M FSA2705M FSA2719M FSA2719P FSA2720M FSA2720P FSA2721M FSA2721P FT3903 FT3904 Ft3905 FT3906 GE-10 GE-17 GE-20 GET706 GET708 GET914 GET929 GET930 GET2221 GET2221A GET2222 GET2222A GET2369
FSA2501P FSA2502M FSA2503M FSA2503P FSA2504M FSA2509M FSA2509P FSA2510M FSA2510P FSA2563M FSA2563P FSA2564M FSA2564P FSA2565M FSA2565P FSA2566M FSA2566P FSA2619M FSA2619P FSA2620M FSA2620P FSA2621 M FSA2702M FSA2703M FSA2704M FSA2705M FSA2619M FSA2619P FSA2720M FSA2720P FSA2721M FSA2721 P 2N3903 2N3904 2N3905 2N3906 MPS2924 MPSA05 2N4401 2N5772 2N5772 2N5772 MPS6514 MPS6514 PN2221 PN2221A PN2222 PN2222A 2N5769
3-84 3-84 3-86 3-86 3-86 3-87 3-87 3-87 3-87 3-89 3-89 3-89 3-89 3-89 3-89 3-89 3-89 3-91 3-91 3-91 3-91 3-91 3-93 3-93 3-93 3-93 3-91 3-91 3-91 3-91 3-91 3-91 3-278 3-278 3-280 3-280 3-94 3-110 3-301 3-152 3-152 3-152 3-102 3-102 3-236 3-238 3-240 3-242 3-246
2-13 2-13 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-44 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-32 2-32 2-42 2-42 2-36 2-32 2-24 2-24 2-24 2"36 2-36 2-34 2-32 2-34 2-32 2-24
GET2484 GET2904 GET2905 GET2906 GET2907 GET3013 GET3014 GET3563 GET3638 GET3638A GET3646 GET5305 GET5306 GET5306A GET5307 GET5308 GET5308A MC1103L MC1103P MC1105F MC1105L MC1105P MC1106F MC1106L MC1106P MC1107F MC1107L MC1107P MD1103F MM1505 MM1748 MM1748A MM1941 MM2055-2 MM2270 MM3005 MM3006 MM3019 MM3020 MM3053 MM3734 MM3735 MM3736 MM3737 MM4005 MM4006 MM4008 MM4009 MM4030
PN2484 PN2904 PN2905 PN2906 PN2907 2N5772 2N5772 PN3563 MPS3638 MPS3638A MPS3646 MPSA13 MPSA14 MPSA14 MPSA13 MPSA14 MPSA14 FSA2501M FSA2501 FSA2002M FSA2563M FSA2563 FSA2003M FSA2564M FSA2564 FSA2504M FSA2503M FSA2503 FSA2500M 2N2369A 2N2369A 2N2369A PN918 2N2907 2N2270 2N3019 2N3019 2N3019 2N3020 2N3053 2N3724 2N3725 2N3724 2N3725 2N4030 2N4033 2N4032 2N4033 2N4030
3-251 3-258 3-258 3-258 3-258 3-152 3-152 3-134 3-142 3-142 3-152 3-114 3-114 3-114 3-114 3-114 3-114 3-84 3-84 3-82 3-89 3-89 3-82 3-89 3-89 3-86 3-86 3-86 3-84 3-246 3-246 3-246 3-134 3-258 3-244 3-264 3-264 3-264 3-264 3-266 3-276 3-276 3-276 3-276 3-286 3-286 3-286 3-286 3-286
2-28 2-42 2-42 2-42 2-42 2-24 2-24 2-22
2-24 2-38 2-38 2-38 2-38 2-38 2-38 2-13 2-13 2-13 2-14 2-14 2-13 2-14 2-14 2-14 2-14 2-14 2-13 2-24 2-24 2-24 2-22 2-42 2-30 2-28 2-28 2-28 2-28 2-28 2-22 2-22 2-22 2-22 2-46 2-46 2-46 2-46 2-46
1-32
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
MM4031 MM4032 MM4033 MM4036 MM4037 MM4208 MM4208A MM4209 MM4209A MM4257 MM5005 MM5006 MM8006 MM8007 MPQ2907 MPQ3725 MPQ3725A MPQ3904 MPQ3906 MPQ6426 MPQ6502 MPQ6700 MPS706 MPS706A MPS753 MPS835 MPS918 MPS2369 MPS2369A MPS2713 MPS2924 MPS3392 MPS3393 MPS3563 MPS3638 MPS3638A MPS3639 MPS3640 MPS3646 MPS3702 MPS3703 MPS3704 MPS3705 MPS3827 MPS3836 MPS4355 MPS4356 MPS5172 MPS5551
2N4033 2N4032 2N4033 2N4036 2N4037 2N4208 2N4209 2N4209 2N4209 2N4208 2N4030 2N4033 PN918 PN918 FPQ2907 FPQ3725 FPQ3725 MPQ3904 MPQ3906 MPQ6426 MPQ6502 MPQ6700 MPS706 MPS706A 2N5772 2N5772 MPS918 MPS2369 MPS2369A 2N4123 MPS2924 MPS3392 MPS3393 MPS3563 MPS3638 MPS3638A MPS3639 MPS3640 MPS3646 MPS3702 MPS3703 MPS3704 MPS3705 PN3694 PN3693 MPS4355 MPS4356 MPS5172 MPS5551
3-286 3-286 3-286 3-289 3-289 3-295 3-295 3-295 3-295 3-295 3-286 3-286 3-134 3-134 3-64 3-65 3-65 3-67 3-69 3-71 3-73 3-75 3-222 3-222 3-152 3-152 3-134 3-246 3-246 3-291 3-94 3-95 3-95 3-134 3-142 3-142 3-144 3-144 3-152 3-97 3-97 3-99 3-99 3-154 3-154 3-165 3-165 3-101 3-333
2-46 2-46 2-46 2-46 2-42 2-26 2-26 2-26 2-26 2-26 2-46 2-46 2-22 2-22 2-21 2-21 2-21 2-21 2-21 2-21 2-21 2-21 2-24 2-24 2-24 2-24 2-22 2-24 2-24 2-34 2-36 2-36 2-36 2-22
2-26 2-26 2-24
2-34 2-34 2-30 2-30
2-36 2-28
MPS6507 MPS6514 MPS6515 MPS6518 MPS6520 MPS6521 MPS6535 MPS6535M MPS6560 MPS6561 MPS6562 MPS6571 MPS6573 MPS6574 MPS6575 MPS6576 MPSA05 MPSA06 MPSA10 MPSA12 MPSA13 MPSA14 MPSA18 MPSA20 MPSA42 MPSA43 MPSA55 MPSA56 MPSA70 MPSA92 MPSA93 MPSD01 MPSD02 MPSD03 MPSD04 MPSD05 MPSD06 MPSD52 MPSD53 MPSD55 MPSD56 MPSL01 MPSL07 MPSL51 N2102A N2195A N6005 PE4010 PE4020
MPS918 MPS6514 MPS6515 MPS6518 MPS6520 MPS6521 MPS6535M MPS6535M MPS6560 MPS6561 MPS6562 MPS6571 2N5209 2N5210 2N5209 2N5210 MPSA05 MPSA06 MPSA10 MPSA12 MPSA13 MPSA14 MPSA18 MPSA20 MPSA42 MPSA43 MPSA55 MPSA56 MPSA70 MPSA92 MPSA93 MPSA42 2N5550 MPSL01 MPSA12 PN3567 2N4400 PN4888 MPSL51 PN4356 2N4402 MPSL01 PN4258 MPSL51 2N1893 2N2218 2N4402 PE4010 PE4020
3-22 3-102 3-102 3-103 3-104 3-104 3-106 3-106 3-107 3-107 3-107 3-109 3-313 3-313 3-313 3-313 3-110 3-110 3-112 3-113 3-114 3-114 3-116 3-118 3-119 3-119 3-121 3-121 3-118 3-123 3-123 3-119 3-333 3-125 3-113 3-140 3-301 3-168 3-125 3-165 3-303 3-125 3-161 3-125 3-234 3-236 3-303 3-127 3-128
2-36 2-36 2-36 2-36
2-36 2-36 2-36 2-30 2-30 2-30 2-30 2-34 2-34 2-32 2-38 2-38 2-38 2-30 2-32 2-26 2-26
2-46 2-46 2-26 2-26 2-28 2-38 2-32 2-32 2-46 2-46 2-42 2-28 2-26 2-28 2-34 2-42 2-36 2-28
1-33
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
PE7058 PE7059 PE8050 PN918 PN930 PN2218 PN2218A PN2219 PN2219A PN2221A PN2222 PN2222A PN2369 PN2369A PN2484 PN2904 PN2904A PN2905 PN2905A PN2906 PN2906A PN2907 PN2907A PN3251 PN3563 PN3565 PN3566 PN3567 PN3569 PN3638A PN3640 PN3641 PN3642 PN3643 PN3644 PN3646 PN3693 PN3694 PN3936 PN3962 PN4121 PN4122 PN4248 PN4249 PN4250 PN4250A PN4254 PN4255 PN4258
PE7058 PE7059 PE8050 PN918 PN930 PN2218 PN2218A PN2219 PN2219A PN2221A PN2222 PN2222A PN2369 PN2369A PN2484 PN2904 PN2904A PN2905 PN2905A PN2906 PN2906A PN2907 PN2907A PN3251 PN3563 PN3565 PN3566 PN3567 PN3569 PN3638A PN3640 PN3641 PN3642 PN3643 PN3644 PN3646 PN3693 PN3694 PN3639 PN3962 PN4121 PN4122 PN4248 PN4249 PN4250 PN4250A PN918 PN918 PN4258
3-130 3-130 3-132 3-134 3-226 3-236 3-238 3-240 3-242 3-238 3-240 3-242 3-246 3-246 3-251 3-258 3-260 3-258 3-260 3-258 3-258 3-258 3-260 3-269 3-134 3-137 3-138 3-140 3-140 3-142 3-144 3-147 3-147 3-147 3-150 3-152 3-154 3-154 3-144 3-284 3-156 3-156 3-158 3-158 3-158 3-158 3-134 3-134 3-161
2-26 2-26 2-36 2-22 2-30 2-34 2-32 2-34 2-32 2-32 2-34 2-32 2-24 2-24 2-28 2-42 2-44 2-42 2-44 2-42 2-44 2-42 2-44 2-42 2-22 2-36 2-34 2-32 2-32 2-40 2-26 2-34 2-30 2-34 2-44 2-24 2-30 2-30 2-26 2-42 2-42 2-42 2-44 2-42 2-44 2-22 2-22 2-26
PN4274 PN4275 PN4354 PN4355 PN4356 PN4888 PN4889 PN4916 PN4917 PN5128 PN5130 PN5133 PN5134 PN5135 PN5136 PN5137 PN5138 PN5139 PN5142 PN5143 PN5770 PN5855 PN5857 PN5965 Q2T2222 Q2T3725 SE1001 SE1002 SE2001 SE2002 SE3646 SE4010 SE4020 SE6001 SE6002 SE8520 SE8521 SH6500 SH6501 SH6502 TID21A TID22A TID23A TID24A TID25A TID26A TID121 TID122 TID123
PN4274 PN4275 PN4354 PN4355 PN4356 PN4888 PN4889 PN4916 PN4917 PN5128 PN5130 PN5133 PN5134 PN5135 PN5136 PN5137 PN5138 PN5139 PN5142 PN5143 PN5770 PN5855 PN5857 PN5965 FPQ2222 FPQ3725 PN3693 PN3694 PN3693 PN3694 PN3646 PE4010 PE4020 PN3567 PN3566 2N4030 2N4030 FPQ3725 FPQ3724 FPQ3724 FSA2002M FSA2002M FSA2003M FSA2003M FSA2500M FSA2500M FSA2563M FSA2563M FSA2564M
3-163 3-163 3-165 3-165 3-165 3-168 3-168 3-170 3-170 3-172 3-174 3-176 3-177 3-179 3-179 3-179 3-182 3-184 3-186 3-186 3-188 3-190 3-190 3-192 3-63 3-65 3-154 3-154 3-154 3-154 3-152 3-127 3-128 3-140 3-138 3-286 3-286 3-65 3-65 3-65 3-82 3-82 3-82 3-82 3-84 3-84 3-89 3-89 3-89
2-24 2-24 2-44 2-44 2-46 2-46 2-46 2-40 2-40 2-38 2-22 2-38 2-24 2-36 2-36 2-36 2-40 2-38 2-38 2-38 2-44 2-26 2-21 2-21 2-30 2-30 2-30 2-30 2-24 2-36 2-28 2-32 2-34 2-46 2-46 2-21 2-21 2-21 2-13 2-13 2-13 2-13 2-13 2-13 2-14 2-14 2-14
1-34
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short
Form
Page No.
TID124 TID125 TID126 TID131 TID132 TID133 TID134 TID135N TID136N TID139F TID139N TID140F TID140N TIS37 TIS38 TIS44 TIS45 TIS46 TIS47 TIS48 TIS49 TIS50 TIS51 TIS52 TIS53 TIS54 TIS55 TIS62 TIS63 TIS64 TIS90 TIS90M TIS91 TIS91M TIS92 TIS92M TIS93 TIS93M TIS97 TIS98 TIS99 TIS100 TIS101 TIS109 TIS110 TIS111 TIS112 TP3638 TP3638A
FSA2564M FSA2510M FSA2510M FSA2504M FSA2504M FSA2509M FSA2509M FSA2510M FSA2510M FSA2721M FSA2720M FSA2721M FSA2720M 2N3905 2N3905 2N5772 2N5772 2N5772 2N5769 2N5769 2N5769 2N5771 2N5769 2N5772 PN3640 PN3640 2N5772 MPS918 MPS918 MPS918 2N4401 2N4401 2N4403 2N4403 2N4401 2N4401 2N4403 2N4403 2N5210 2N5961 MPSA06 2N5833 2N5831 PN2222 PN2221 PN2222A PN2907 MPS3638 MPS3638A
3-89 3-87 3-87 3-86 3-86 3-87 3-87 3-87 3-87 3-91 3-91 3-91 3-91 3-280 3-280 3-152 3-152 3-152 3-246 3-246 3-246 3-338 3-246 3-152 3-144 3-144 3-152 3-134 3-134 3-134 3-301 3-301 3-303 3-303 3-301 3-301 3-303 3-303 3-313 3-343 3-110 3-340 3-340 3-240 3-236 3-242 3-258 3-142 3-142
2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-42 2-42 2-24 2-24 2-24 2-24 2-24 2-24 2-26 2-24 2-24 2-26 2-26 2-26 2-22 2-22 2-22 2-32 2-32 2-42 2-42 2-32 2-32 2-42 2-42 2-30 2-28 2-26 2-28 2-34 2-34 2-32 2-42
TP4123 TP4124 TP4125 TP4126 TP4257 TP4258 TP4274 TP4275 TPS6414 TPS6515 TPS6518
2N4123 2N4124 2N4125 2N4126 PN4258 PN4258 PN4274 PN4275 MPS6514 MPS6515 MPS6518
3-291 3-291 3-293 3-293 3-161 3-161 3-163 3-163 3-102 3-102 3-103
2-34 2-36 2-40 2-40 2-26 2-26 2-24 2-24 2-36 2-36
1-35
Index and Device Cross reference Thruhole Index and Device Crossreference Surface Mount Device Selection Guides Product Information
If you need the electrical characteristics for any of the listed industry standards, they are available and guaranteed by four device families. Each of these families are available in five configurations including; single, series, common cathode and common anode. Please see the appropriate data sheet for details.
FDS01200 family 1N914659 1N914A 1N914B 1N916 1N916A 1N916B 1N3064 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4154 1N4305 1N4446 1N4448 1N4449 1N4450 1N4455 FDH600 FDH666 MMBD2835 MMBD2836 MMBD2837 MMBD2838 MMBD6050 MMBD6100
FDS01400 family 1N625 1N626 1N627 1N628 1N629 1N658 1N660 1N3060 18920 18921 18922 18923 FDH400 FDH444 FDS01500 family 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A 1N461A 1N462A 1N463A 1N4828 1N4838 1N4848 1N485B 1N3595 1N6099 FDH300 FDH333 FDS01700 family 1N4244 1N4376 FDH700
1-38
Index and Device Crossreference Thruhole ---.. Surface Mount
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A 1N461A 1N462A 1N463A 1N4828 1N4838 1N4848 1N4858 1N625 1N626 1N627 1N628 1N629 1N658 1N659 1N660 1N661 1N914A 1N9148 1N916A 1N9168 1N920 1N921 1N922 1N923 1N3064 1N3070 1N35.95 1N3600 1N4009 1N4148 1N4149 1N4150 1N4151 1N4152 1N4153 1N4154 1N4305 1N4446 1N4447 1N4448 1N4449
FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FDLL459 FDLL459A FDLL461A FDLL462A FDLL463A FDLL4828 FDLL4838 FDLL4848 FDLL4858 FDLL625 FDLL626 FDLL627 FDLL628 FDLL629 FDLL658 FDLL659 FDLL660 FDLL661 FDLL914A FDLL9148 FDLL916A FDLL9168 FDLL920 FDLL921 FDLL922 FDLL923 FDLL3064 FDLL3070 FDLL3595 FDLL3600 FDLL4009 FDLL4148 FDLL4149 FDLL4150 FDLL4151 FDLL4152 FDLL4153 FDLL4154 FDLL4305 FDLL4446 FDLL4447 FDLL4448 FDLL4449
3-194 3-194 3-194 3-194 3-194 3-194 3-194 3-194 3-195 3-195 3-195 3-196 3-196 3-196 3-196 3-197 3-197 3-197 3-197 3-197 3-198 3-199 3-199 3-199 3-201 3-201 3-201 3-201 3-220 3-220 3-220 3-220 3-204 3-205 3-206 3-207 3-208 3-201 3-201 3-207 3-209 3-209 3-209 3-209 3-204 3-201 3-201 3-201 3-201
2-6 2-6 2-6 2-6 2-6 2-6 2-6 2-6 2-9 2-9 2-8 2-6 2-6 2-6 2-6 2-5 2-7 2-7 2-7 2-7 2-7 2-9 2-7 2-8 2-4 2-4 2-4 2-4 2-9 2-8 2-8 2-8 2-4 2-7 2-6 2-4 2-5 2-4 2-4 2-5 2-4 2-4 2-4 2-4 2-4 2-4 2-4 2-4 2-4
1N4450 1N4454 1N4938 1N5768 1N5770 1N5772 1N5774 1N6099 1N6101 2N706 2N930A 2N2369 2N2369A 2N2710 2N2905 2N3013 2N3014 2N3117 2N3903 2N3904 2N3906 2N3946 2N4123 2N4124 2N4125 2N4126 2N4208 2N4209 2N4401 2N4402 2N4403 2N4409 2N4410 2N5086 2N5087 2N5088 2N5089 2N5209 2N5210 2N5223 2N5224 2N5225 2N5226 2N5227 2N5228 2N5400 2N5401 2N5520 2N5550
FDLL4450 FDLL4454 FDLL4938 FAS05768 FAS05770 FAS05772 FAS05774 FDLL6099 FAS06101 FTS0706 FTS0930A FTS02369 FTS02369A FTS02710 FTS03905 FTS03013 FTS03014 FTS03117 FTS03903 FTS03904 FTS03906 FTS03946 FTS04123 FTS04124 FTS04125 FTS04126 FTS04208 FTS04209 FTS04401 FTS04402 FTS02403 FTS04409 FTS04410 FTS05086 FTS05087 FTS05088 FTS05089 FTS05209 FTS05210 FTS05223 FTS05224 FTS05225 FTS05226 FTS05227 FTS05228 FTS05400 FTS05401 FTS05220 FTS05550
3-207 3-204 3-205 3-216 3-216 3-216 3-216 3-206 3-218 3-222 3-228 3-246 3-246 3-256 3-280 3-262 3-262 3-251 3-278 3-278 3-280 3-282 3-291 3-291 3-293 3-293 3-295 3-295 3-301 3-303 3-303 3-305 3-305 3-309 3-309 3-311 3-311 3-313 3-313 3-316 3-318 3-320 3-320 3-322 3-323 3-329 3-329 3-315 3-333
2-5 2-5 2-15 2-15 2-15 2-15 2-6 2-15 2-22 2-30 2-22 2-22 2-22 2-40 2-22 2-22 2-28 2-32 2-32 2-42 2-32 2-34 2-34 2-40 2-38 2-32 2-42 2-42 2-28 2-28 2-44 2-44 2-34 2-34 2-28 2-28 2-36 2-24 2-34 2-40 2-40 2-26 2-46 2-46 2-38 2-28
..
1-39
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Fonn Page No.
2N5769 2N5771 2N5772 2N5830 2N5831 2N5833 2N5961 BAS16 BAV70 BAV74 BAV99 BAW56 BCF29 BCF30 BCF70 BCF81 BCW29 BCW30 BCW32 BCW33 BCW60A BCW61A BCW65A BCW66F BCW69 BCW70 BCW72 BCW81 BCX70G BCX70H BCX70J BCX71H BCX71J BCX71K BSR13 BSR14 BSR15 BSR16 BSR17 BSS63 BSS64 BSS79B BSS79C BSS80B BSS80C BSV52 BSX39 FAS02501 FAS02503
FTS05769 FTS05771 FTS05772 FTS05830 FTS05831 FTS05833 FTS05962 BAS16 BAV70 BAV74 BAV99 BAW56 BCF29 BCF30 BCF70 BCF81 BCW29 BCW30 BCW32 BCW33 BCW60A BCW61A BCW65A BCW66F BCW69 BCW70 BCW72 BCW81 BCX70G BCX70H BCX70J BCX71H BCX71J BCX71K BSR13 BSR14 BSR15 BSR16 BSR17 BSS63 BSS64 BSS79B BSS79C BSS80B BSS80C BSV52 BSX39 FAS02501 FAS02503
3-246 3-338 3-152 3-340 3-340 3-340 3-343 3-5 3-7 3-8 3-9 3-10 3-19 3-19 3-20 3-21 3-22 3-22 3-23 3-23 3-24 3-26 3-27 3-28 3-29 3-29 3-30 3-31 3-32 3-32 3-32 3-34 3-34 3-34 3-36 3-36 3-38 3-38 3-40 3-42 3-43 3-44 3-44 3-45 3-45 3-46 3-47 3-84 3-86
2-22 2-26 2-22 2-28 2-28 2-26 2-30 2-10 2-10 2-10 2-10 2-10 2-40 2-40 2-42 2-30 2-38 2-38 2-36 2-36 2-32 2-40 2-32 2-30 2-42 2-42 2-30 2-30 2-30 2-30 2-30 2-42 2-42 2-44 2-32 2-30 2-40 2-44 2-30 2-46 2-28 2-30 2-30 2-40 2-40 2-24 2-24 2-15 2-15
FAS02509 FAS02510 FAS02563 FAS02564 FAS02565 FAS02566 FAS02618 FAS02619 FAS02620 FAS02718 FAS02719 FAS02720 FAS05768 FAS05770 FAS05772 FAS05774 FAS06101 FDH300 FDH333 FDH400 FDH444 FDH600 FDH666 FDH700 FDH777 FDH900 FDH999 FDH1000 FDLL300 FDLL333 FDLL400 FDLL444 FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FDLL459 FDLL459A FDLL461A FDLL462A FDLL463A FDLL482B FDLL483B FDLL484B FDLL485B FDLL600 FDLL625
FAS02509 FAS02510 FAS02563 FAS02564 FAS02565 FAS02566 FAS02618 FAS02619 FAS02620 FAS02718 FAS02719 FAS02720 FAS05768 FAS05770 FAS05772 FAS05774 FAS06101 FDLL300 FDLL333 FDLL400 FDLL444 FDLL600 FDLL666 FDLL700 FDLL777 FDLL900 FDLL999 FDLL 1000 FDLL300 FDLL333 FDLL400 FDLL444 FDLL456 FDLL456A FDLL457 FDLL457A FDLL458 FDLL458A FDLL459 FDLL459A FDLL461A FDLL462A FDLL463A FDLL482B FDLL483B FDLL484B FDLL485B FDLL600 FDLL625
3-87 3-87 3-89 3-89 3-89 3-89 3-50 3-91 3-91 3-50 3-91 3-91 3-216 2-216 3-216 3-216 3-218 3-52 3-52 3-53 3-53 3-54 3-54 3-55 3-55 3-56 3-56 3-57 3-52 3-52 3-53 3-53 3-194 3-194 3-194 3-194 3-194 3-194 3-194 3-194 3-195 3-195 3-195 3-196 3-196 3-196 3-196 3-54 3-197
2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-6 2-6 2-7 2-7 2-4 2-5
2-6 2-6 2-7 2-7 2-6 2-6 2-6 2-6 2-6 2-6 2-6 2-6 2-9 2-9 2-8 2-6 2-6 2-6 2-6 2-4 2-5
1-40
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short
Form
Page No.
FDLL626 FDLL627 FDLL628 FDLL629 FDLL658 FDLL659 FDLL660 FDLL661 FDLL666 FDLL700 FDLL777 FDLL900 FDLL914A FDLL914B FDLL916A FDLL916B FDLL920 FDLL921 FDLL922 FDLL923 FDLL999 FDLL 1000 FDLL3064 FDLL3070 FDLL3595 FDLL3600 FDLL4009 FDLL4148 FDLL4149 FDLL4150 FDLL4151 FDLL4152 FDLL4153 FDLL4154 FDLL4305 FDLL4446 FDLL4447 FDLL4448 FDLL4449 FDLL4450 FDLL4454 FDLL4938 FDLL6099 FDS01201 FDS01202 FDS01203 FDS01204 FDS01205 FDS01401
FDLL626 FDLL627 FDLL628 FDLL629 FDLL658 FDLL659 FDLL660 FDLL661 FDLL666 FDLL700 FDLL777 FDLL900 FDLL914A FDLL914B FDLL916A FDLL916B FDLL920 FDLL921 FDLL922 FDLL923 FDLL999 FDLL1000 FDLL3064 FDLL3070 FDLL3595 FDLL3600 FDLL4009 FDLL4148 FDLL4149 FDLL4150 FDLL4151 FDLL4152 FDLL4153 FDLL4154 FDLL4305 FDLL4446 FDLL4447 FDLL4448 FDLL4449 FDLL4450 FDLL4454 FDLL4938 FDLL6099 FDS01201 FDS01202 FDS01203 FDS01204 FDS01205 FDS01401
3-197 3-197 3-197 3-197 3-198 3-199 3-199 3-199 3-54 3-55 3-55 3-56 3-201 3-201 3-201 3-201 3-220 3-220 3-220 3-220 3-56 3-57 3-204 3-205 3-206 3-207 3-208 3-201 3-201 3-207 3-209 3-209 3-209 3-209 3-204 3-201 3-201 3-201 3-201 3-207 3-204 3-205 3-206 3-58 3-58 3-58 3-58 3-58 3-59
2-7 2-7 2-7 2-7 2-7 2-9 2-7 2-8 2-5
2-4 2-4 2-4 2-4 2-9 2-8 2-8 2-8 2-4 2-4 2-7 2-6 2-4 2-5 2-4 2-4 2-5 2-4 2-4 2-4 2-4 2-4 2-4 2-4 2-4 2-4 2-5 2-5 2-6 2-9 2-9 2-9 2-9 2-9 2-9
FDS01402 FDS01403 FDS01404 FDS01405 FDS01501 FDS01502 FDS01503 FDS01504 FDS01505 FDS01701 FDS01702 FDS01703 FDS01704 FDS01705 FPQ1410M FPQ1411M FPQ2002M FPQ2003M FPQ2500M FPQ2501M FPQ2501P FPQ2502M FPQ2503M FPQ2503P FPQ2504M FPQ2509M FPQ2509P FPQ2510M FPQ2510P FPQ2563M FPQ2563P FPQ2564M FPQ2564P FPQ2565M FPQ2565P FPQ2566M FPQ2566P FPQ3724 FPQ3725 FPQ3904 FPQ3906 FPQ6426 FPQ6502 FPQ6700 FQS03724 FQS03725 FQS03904 FQS03906 FQS06421
FDS01402 FDS01403 FDS01404 FDS01405 FDS01501 FDS01502 FDS01503 FDS01504 FDS01505 FDS01701 FDS01702 FDS01703 FDS01704 FDS01705 FSA1410M FSA1411 M FSA2002M FSA2003M FSA2500M FSA2501M FSA2501P FSA2502M FSA2503M FSA2503P FSA2504M FSA2509M FSA2509P FSA251OM FSA2510P FSA2563M FSA2563P FSA2564M FSA2564P FSA2565M FSA2565P FSA2566M FSA2566P FQS03724 FQS03725 FQS03904 FQS03906 FQS06426 FQS06502 FQS06700 FQS03724 FQS03725 FQS03904 FQS03906 FQS06421
3-59 3-59 3-59 3-59 3-60 3-60 3-60 3-60 3-60 3-61 3-61 3-61 3-61 3-61 3-82 3-82 3-82 3-82 3-84 3-84 3-84 3-84 3-86 3-86 3-86 3-87 3-87 3-87 3-87 3-89 3-89 3-89 3-89 3-89 3-89 3-89 3-89 3-65 3-65 3-67 3-69 3-71 3-73 3-75 3-65 3-65 3-67 3-69 3-71
2-9 2-9 2-9 2-9 2-9 2-9 2-9 2-9 2-9 2-10 2-10 2-10 2-10 2-10 2-13 2-13 2-13 2-13 2-13 2-13 2-13 2-13 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-14 2-44 2-14 2-14 2-14
II
1-41
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
FQS06502 FQS06700 FSA2501 FSA2503 FSA2509 FSA2510 FSA2563 FSA2564 FSA2565 FSA2566 FSA2568 FSA2619 FSA2620 FSA2718 FSA2719 FSA2720 FTS0706 FTS0706A FTS0918 FTS0930 FTS0930A FTS02218 FTS02218A FTS02219 FTS02219A FTS02221 FTS02221 A FTS02222 FTS02222A FTS02369 FTS02369A FTS02484 FTS02710 FTS02904 FTS02904A FTS02905 FTS02905A FTS02906 FTS02906A FTS02907 FTS02907 A FTS02924 FTS03013 FTS03014 FTS03117 FTS03251 FTS03392 FTS03393 FTS03563
FQS06502 FQS06700 FAS02501 FAS02503 FAS02509 FAS02510 FAS02563 FAS02564 FAS02565 FAS02566 FAS02568 FAS02619 FAS02620 FAS02718 FAS02719 FAS02720 FTS0706 FTS0706A FTS0918 FTS0930 FTS0930A FTS02218 FTS02218A FTS02219 FTS02219A FTS02221 FTS02221 A FTS02222 FTS02222A FTS02369 FTS02369A FTS02484 FTS02710 FTSO,2904 FTS02904A FTS02905 FTS02905A FTS02906 FTS02906A FTS02907 FTS02907 A FTS02924 FTS03013 FTS03014 FTOS3117 FTS03251 FTS03392 FTS03393 FTS03563
3-73 3-75 3-84 3-86 3-87 3-87 3-89 3-89 3-89 3-89 3-5 3-91 3-91 3-50 3-91 3-91 3-222 3-222 3-134 3-226 3-228 3-236 3-238 3-240 3-242 3-236 3-238 3-240 3-242 3-246 3-246 3-251 3-256 3-258 3-260 3-258 3-260 3-258 3-260 3-258 3-260 3-94 3-262 3-262 3-251 3-269 3-95 3-95 3-134
2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-15 2-22 2-22 2-22 2-30 2-30 2-32 2-30 2-32 2-30 2-34 2-30 2-34 2-32 2-22 2-22 2-28 2-22 2-40 2-44 2-40 2-44 2-40 2-44 2-40 2-44 2-34 2-22 2-22 2-28 2-40 2-34 2-34 2-22
FTS03565 FTS03565 3-137 FTS03566 FTS03566 3-138 FTS03567 FTS03567 3-140 FTS03569 FTS03569 3-140 FTS03638 FTS03638 3-142 FTS03638A FTS03638A 3-142 FTS03639 FTOS3639 3-144 FTS03640 FTS03640 3-144 FTS03641 FTS03641 3-147 FTS03642 FTS03642 3-147 FTS03643 FTS03643 3-147 FTS03644 FTS03644 3-150 FTS03645 FTS03645 3-150 FTS03646 FTS03646 3-152 FTS03693 FTS03693 3-154 FTS03694 FTS03694 3-154 FTS03702 FTS03702 3-97 FTS03703 FTS03703 3-97 FTS03704 FTS03704 3-99 FTS03705 FTS03705 3-99 FTS03903 FTS03903 3-278 FTS03904 FTS03904 3-278 FTS03905 FTS03905 3-280 FTS03906 FTS03906 3-280 FTS03946 FTS03946 3-282 FTS03962 FTS03962 3-284 FTS04121 FTS04121 3-156 FTS04122 FTS04122 3-156 FTS04123 FTS04123 3-291 FTS04124 FTS04124 3-291 FTS04125 FTS04125 3-293 FTS04126 FTS04126 3-293 FTS04208 FTS04208 3-295 FTS04209 FTS04209 3-295 FTS04248 FTS04248 3-158 FTS04249 FTS04249 3-158 FTS04250 FTS04250 3-158 FTS04258 FTS04258 3-161 FTS04274 FTS04274 3-163 FTS04275 FTS04275 3-163 FTS04354 FTS04354 3-165 FTS04355 FTS04355 3-165 FTS04356 FTS04356 3-165 FTS04400 FTS04400 3-301 FTS04401 FTS04401 3-301 FTS04402 FTS04402 3-303 FTS04403 FTS04403 3-303 FTS04409 FTS04409 3-305 FTS04410 FTS04410 3-305
2-34 2-34 2-32 2-32 2-38 2-38 2-26 2-26 2-34 2-30 2-34 2-44 2-44 2-22 2-30 2-30 2-38 2-40 2-40 2-40 2-32 2-32 2-40 2-42 2-32 2-44 2-42 2-42 2-34 2-34 2-40 2-38
2-42 2-44 2-42 2-26 2-38 2-21 2-44 2-44 2-46 2-32 2-32 2-42 2-42 2-28 2-28
1-42
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
FTS04888 FTS04889 FTS04916 FTS04917 FTS05086 FTS05087 FTS05088 FTS05089 FTS05128 FTS05130 FTS05133 FTS05134 FTS05135 FTS05136 FTS05137 FTS05138 FTS05139 FTS05142 FTS05143 FTS05172 FTS05209 FTS05210 FTS05220 FTS05223 FTS05224 FTS05225 FTS05226 FTS05227 FTS05228 FTS05400 FTS05401 FTS05550 FTS05551 FTS05769 FTS05770 FTS05771 FTS05772 FTS05830 FTS05831 FTS05833 FTS05855 FTS05857 FTS05961 FTS05962 FTS05965 FTS06514 FTS06515 FTS06518 FTS06520
FTS04888 FTS04889 FTS04916 FTS04917 FTS05086 FTOS5087 FTS05088 FTS05089 FTS05128 FTS05130 FTS05133 FTS05134 FTS05135 FTS05136 FTS05137 FTS05138 FTS05139 FTS05142 FTS05143 FTS05172 FTS05209 FTS05210 FTS05220 FTS05223 FTS05224 FTS05225 FTS05226 FTS05227 FTS05228 FTS05400 FTS05401 FTS05550 FTS05551 FTS05769 FTS05770 FTS05771 FTS05772 FTS05830 FTS05831 FTS05833 FTS05855 FTS05857 FTS05961 FTS05962 FTS05965 FTS06514 FTS06515 FTS06518 FTS06520
3-168 3-168 3-170 3-170 3-309 3-309 3-311 3-311 3-172 3-174 3-176 3-177 3-179 3-179 3-179 3-182 3-184 3-186 3-186 3-101 3-313 3-313 3-315 3-316 3-318 3-320 3-320 3-322 3-323 3-329 3-329 3-333 3-333 3-246 3-188 3-338 3-152 3-340 3-340 3-340 3-190 3-190 3-343 3-343 3-192 3-102 3-102 3-103 3-104
2-46 2-46 2-40 2-40 2-44 2-44 2-34 2-34 2-38 2-22 2-38 2-38 2-34 2-36 2-36 2-40 2-38 2-38 2-38 2-34 2-28 2-28 2-38 2-36 2-24 2-34 2-40 2-40 2-26 2-46 2-46 2-28 2-28 2-22 2-26 2-22 2-28 2-28 2-26 2-44 2-46 2-28 2-30 2-26 2-36 2-36 2-42 2-36
FTS06521 FTS06521 FTS06560 FTS06560 FTS06561 FTS06561 FTS06562 FTS06562 FTS06571 FTS06571 FTSOA05 FTSOA05 FTSOA06 FTSOA06 FTSOA12 FTSOA12 FTSOA13 FTSOA13 FTSOA14 FTSOA14 FTSOA20 FTSOA20 FTSOA42 FTSOA42 FTSOA43 FTSOA43 FTSOA55 FTSOA55 FTSOA56 FTSOA56 FTSOA70 FTSOA70 FTSOL01 FTSOL01 FTSOL51 FTSOL51 MMBT918 FTS0918 MMBT930 FTS0930 MMBT2222 FTS02222 MMBT2222A FTS02222A MMBT2369 FTS02369 MMBT2484 FTS02484 MMBT2907 FTS02907 MMBT2907 A FTS02907A MMBT3638 FTS03638 MMBT3638AFTS03638A MMBT3640 FTS03640 MMBT3903 FTS03903 MMBT3904 FTS03904 MMBT3906 FTS03906 MMBT4124 FTS04124 MMBT4125 FTS04125 MMBT4401 FTS04401 MMBT4403 FTS04403 MMBT5086 FTS05086 MMBT5087 FTS05087 MMBT5088 FTS05088 MMBT5089 FTS05089 MMBT5401 FTS05401 MMBT5550 FTS05550 MMBTA05 FTSOAOS MMBTA06 FTSOA06 MMBTA13 FTSOA13 MMBTA14 FTSOA14 MMBTA20 FTSOA20 MMBTA42 FTSOA42 MMBTA43 FTSOA43
3-104 3-107 3-107 3-107 3-109 3-110 3-110 3-113 3-114 3-114 3-118 3-119 3-119 3-121 3-121 3-118 3-125 3-125 3-134 3-226 3-240 3-242 3-246 3-251 3-258 3-260 3-142 3-142 3-144 3-278 3-278 3-280 3-291 3-293 3-301 3-303 3-309 3-309 3-311 3-311 3-329 3-333 3-110 3-110 3-114 3-114 3-118 3-119 3-119
2-36 2-36 2-36 2-40 2-36
2-38 2-38 2-30 2-26 2-26 2-42 2-28 2-46 2-22 2-30 2-34 2-32 2-22 2-28 2-40 2-44 2-38 2-38 2-26 2-32 2-32 2-42 2-34 2-40 2-32 2-42 2-44 2-44 2-34 2-34 2-46 2-28 2-38 2-38 2-30 2-26 2-26
1-43
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
Industry Device
Fairchild Device
Data Sheet Page No.
Short Form Page No.
MMBTA55 MMBTA56 MMBTA70 MPS706A MPS918 MPS2924 MPS3392 MPS3393 MPS3639 MPS3640 MPS3646 MPS3702 MPS3703 MPS3704 MPS3705 MPS5172 MPS5551 MPS6514 MPS6515 MPS6518 MPS6520 MPS6521 MPS6560 MPS6561 MPS6562 MPS6571 MPSA05 MPSA06 MPSA13 MPSA14 MPSA20 MPSA42 MPSA43 MPSA55 MPSA56 MPSA70 MPSL01 MPSL51 PN930 PN2218 PN2218A PN2219 PN2219A PN2221 PN2221A PN2222 PN2222A PN2484 PN2904 PN2904A
FTSOA55 FTSOA56 FTSOA70 FTS0706A FTS0918 FTS02924 FTS03392 FTS03393 FTS03639 FTS03640 FTS03646 FTS03702 FTS03703 FTS03704 FTS03705 FTS05172 FTS05551 FTS06514 FTS06515 FTS06518 FTS06520 FTS06521 FTS06560 FTS06561 FTS06562 FTS06571 FTSOA05 FTSOA06 FTSOA13 FTSOA14 FTSOA20 FTSOA42 FTSOA43 FTSOA55 FTSOA56 FTSOA70 FTSOL01 FTSOL51 FTS0930 FTS02218 FTS02218A FTS02219 FTS02219A FTS02221 FTS02221 A FTS02222 FTS02222A FTS02484 FTS02904 FTS02904A
3-121 3-121 3-118 3-222 3-134 3-94 3-95 3-95 3-144 3-144 3-152 3-98 3-97 3-99 3-99 3-101 3-333 3-102 3-102 3-103 3-104 3-104 3-107 3-107 3-107 3-109 3-110 3-110 3-114 3-114 3-118 3-119 3-119 3-121 3-121 3-118 3-125 3-125 3-226 3-237 3-239 3-241 3-243 3-237 3-239 3-241 3-243 3-251 3-258 3-260
2-42 2-22 2-22 2-34 2-34 2-34 2-26 2-26 2-22 2-38 2-40 2-40 2-40 2-34 2-28 2-36 2-36 2-42 2-36 2-36 2-36 2-36 2-40 2-36 2-38 2-38 2-30 2-26 2-26 2-44 2-36 2-42 2-28 2-46 2-30 2-32 2-30 2-32 2-30 2-34 2-30 2-34 2-32 2-28 2-40 2-44
PN2905 PN2905A PN2906 PN2906A PN2907 PN2907A PN3251 PN3563 PN3565 PN3566 PN3569 PN3638 PN3638A PN3641 PN3642 PN3643 PN3644 PN3645 PN3693 PN3694 PN4121 PN4122 PN4248 PN4249 PN4250 PN4250A PN4258 PN4274 PN4275 PN4354 PN4355 PN4356 PN4888 PN4889 PN4916 PN4917 PN5128 PN5130 PN5133 PN5134 PN5135 PN5136 PN5137 PN5138 PN5139 PN5142 PN5855 PN5857 PN5965
FTS02905 FTS02905A FTS02906 FTS02906A FTS02907 FTS02907 A FTS03251 FTS03563 FTS03565 FTS03566 FTS03569 FTS03638 FTS03638A FTS03641 FTS03642 FTS03643 FTS03644 FTS03645 FTS03693 FTS03694 FTS04121 FTS04122 FTS04248 FTS04249 FTS04250 FTS04250A FTS04258 FTS04274 FTS04275 FTS04354 FTS04355 FTS04356 FTS04888 FTS04889 FTS04916 FTS04917 FTS05128 FTS05130 FTS05133 FTS05134 FTS05135 FTS05136 FTS05137 FTS05138 FTS05139 FTS05142 FTS05855 FTS05857 FTS05965
3-258 3-260 3-258 3-260 3-258 3-260 3-269 3-134 3-137 3-138 3-140 3-142 3-142 3-147 3-147 3-147 3-150 3-150 3-154 3-154 3-156 3-156 3-158 3-158 3-158 3-158 3-161 3-163 3-163 3-165 3-165 3-165 3-168 3-168 3-171 3-171 3-172 3-174 3-176 3-177 3-179 3-179 3-179 3-182 3-184 3-186 3-190 3-190 3-192
2-40 2-44 2-40 2-44 2-40 2-44 2-40 2-22 2-34 2-34 2-32 2-38 2-38 2-34 2-30 2-34 2-44 2-44 2-30 2-30 2-42 2-42 2-42 2-44 2-42 2-26 2-38 2-22 2-44 2-44 2-46 2-46 2-46 2-40 2-40 2-38 2-22 2-38 2-38 2-34 2-36 2-36 2-40 2-38 2-38 2-44 2-46 2-26
1-44
Index and Device Cross reference Device Selection Guides Product Information Product Family Curves Test Circuits ring Information and Outlines High Reliability Information Dice and Wafer Information Field Sales Offices
FAIRCHIL..O
Diode Shortform Data
Computer Diodes (By Ascending trr) Glass - Package trr
BV
V
DEVICE NO_ FD700 1N4376 1N4244 BAY82 FD777 1N5282 1N4153 1N4151 1N4305 BAY71 1N4152 1N4154 1N914 1N914A 1N914B 1N916 1N916A 1N916B 1N4148 1N4149 1N4446 1N4447 1N4448 1N4449 1N3600 FDH600 1N3064 1N4150 1N4454 BAX13
n. Max
0.70 0.75 0.75 0.75 0.75 2.0 2.0 2.0 2.0 2.0 2.0 2.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0
Min
30 20 20 15 15 80 75 75 75 50 40 35 100 100 100 100 100 100 100 100 100 100 100 100 75 75 75 75 75 50
IR nA Max
50 100 100 100 100 100 50 50 100 100 50 100 25 25 25 25 25 25 25 25 25 25 25 25 100 100 100 100 100 200
VR
@ V
VF
V @
IF mA
50 50 20 20 20 500 20 50 10 20 20 30 10 20 100 10 20 30 10 10 20 20 100 30 200 200 10 200 10 20
Max
20 10 10 12 8.0 55 50 50 50 35 30 25 20 20 20 20 20 20 20 20 20 20 20 20 50 50 50 50 50 50 1.1 1.1 1.0 1.0 1.0 1.3 0.88 1.0 0.85 1.0 0.88 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
pF Max
1.0 1.0 0.8 1.3 1.3 2.5 4.0 4.0 2.0 2.0 4.0 4.0 4.0 4.0 4.0 2.0 2.0 2.0 4.0 2.0 4.0 4.0 2.0 2.0 2.5 2.5 2.0 2.5 2.0 3.0
Package No_
00-7 00-7 00-7 00-7 00-7 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35
Page No_
3-55 3-18 3-18 3-18 3-55 3-215 3-209 3-209 3-204 3-14 3-209 3-209 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-207 3-54 3-204 3-207 3-204 3-12
2-3
Computer Diodes (By Ascending Irr) continued Glass Package DEVICE NO. BAY74 FDH900 FDH666 lN4450 1N4009 1N625 FDH999 FDH1000 trr ns Max 4.0 4.0 4.0 4.0 4.0 4.0 5.0 100 BV V Min 50 45 40 40 35 30 35 75 IR nA Max 100 500 100 50 100 1000 1000 50
@
VR V 35 40 25 30 25 20 25 20
VF V Max 1.1 1.1 1.0 1.0 1.0 1.5 1.0 1.0
IF mA 300 100 100 200 30 4.0 10 500
C pF Max 3.0 3.0 3.5 4.0 4.0
Package No. 0035 00-35 00-35 00-35 00-35 00-35 0035 00-35
Page No. 3-17 3-56 3-54 3-207 3-208 3-197 3-56 3-57
5.0 5.0
Computer Diodes (By Ascending Irr) continued Leadless Glass Package Device No. FDLL4153 FDLL4151 FDLL4305 FDLL4152 FDLL4154 FDLL914 FDLL914A FDLL914B FDLL916 FDLL916A FDLL916B FDLL4148 FDLL4149 FDLL4446 FDLL4447 FDLL4448 FDLL4449 FDLL3600 FDLL600 FDLL3064 trr ns Max. 2.0 2.0 2.0 2.0 2.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0
Bv V Min.
75 75 75 40
IR nA Max. 50 50 100 50 100 25 25 25 25 25 25 25 25 25 25 25 25 100 100 100
VR V 50 50
VF V @ Max. 0.88 1.0 0.85 0.88 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
IF mA 20
C pF Max. 4.0 4.0 2.0 4.0 4.0 4.0 4.0 4.0 2.0 2.0 2.0 4.0 2.0 4.0 4.0 2.0 2.0 2.5 2.5 2.0
Pkg. No. LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34
Page No. 3-209 3-209 3-204 3-209 3-209 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-201 3-207 3-54 3-204
50
10
50
30 25 20 20 20 20 20
20
35
100 100 100 100 100 100 100 100 100 100 100 100 75 75 75
30
10 20 100 10
20
30 10 10 20
20
20 20 20 20 20 20
20
100
30
200 200 10
50
50
50
2-4,
Computer Diodes (By Ascending t rr) continued Leadless Glass Package
trr
Device No. FDLL4150 FDLL4454 FDLL666 FDLL4450 FDLL4009 FDLL625 ns Max.
Bv
V Min.
IR nA Max.
VR V
VF V Max.
IF mA
C
pF Max. Pkg. No. LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 Page No.
4.0 4.0 4.0 4.0 4.0 50
75 75 40 40 35 30
100 100 100 50 100 1000 20
50 50
1.0 1.0 1.0 1.0 1.0 1.5
200 10 100 200

30
2.5 2.0 3.5 4.0 4.0
3-207 3-204 3-54 3-207 3-208 3-197
25 30 25
4.0
Low Leakage Diodes (By Descending Bv) Glass Package DEVICE NO. 1N485B 1N459 1N459A FDH300 1N3595 1N6099 FDH333 1N458A 1N484B 1N458 BAY73 1N483B 1N457 1N457A 1N482B FJT1100 1N456A 1N456 BV V Min IR nA Max VR V VF V Max IF mA
C pF Max
-
Package No.
Page No.
200 200 200 150 150 150 150 150 150 150 125 80 70 70 40 30 30 30
25 25 25 1.0 1.0 1.0 3.0 5.0 25 25 5.0 25 25 25 25 0.001 25 25
180 175 175 125 125 125 125 125 130 125 100 70 60 60 36 5.0 25 25
1.0 1.0 1.0 1.0 1.0 1.0 1.05 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.05 1.0 1.0
100 3.0 100 200 200 200 200 100 100 7.0 200 100 20 100 100 10 100 40
00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-7 00-35 00-35
3-196 3-194 3-194 3-52 3-206 3-206 3-52 3-194 3-196 3-194 3-16 3-196 3-194 3-194 3-196 3-62 3-194 3-194
6.0 8.0 8.0 6.0

-
6.0 8.0
8.0
1.5
10
2-5
Low Leakage Diodes (by Descending Bv) Leadless Glass Package Device No. FDLL485B FDLL459 FDLL459A FDLL300 FDLL3595 FDLL6099 FDLL333 FDLL458A FDLL484B FDLL458 FDLL483B FDLL457 FDLL457A FDLL482B FDLL456A FDLL456
Bv V Min.
IR
nA @ Max.
VR V
VF V Max.
IF
rnA
C pF Max.
Pkg. No.
Page No.
200 200 200 150 150 150 150 150 150 150 80 70 70
40
25 25 25 1.0 1.0 1.0 3.0 5.0 25 25 25 25 25 25 25 25
180 175 175 125 125 125 125 125 130 125 70 60 60 36 25 25
1.0 1.0 1.0 1.0 1.0 1.0 1.05 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
100 3.0 100 200 200 200 200 100 100 7.0 100 20 100 100 100 40
LL-34 LL-34 6.0 8.0 8.0 6.0 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34
6.0 8.0
3-196 3-194 3-194 3-52 3-206 3-206 3-52 3-194 3-196 3-194 3-196 3-194 3-194 3-196 3-194 3-194
30 30
10
High Voltage Diodes (By Descending Bv) Glass Package DEVICE NO. BAV21 1N661 FDH400 1N3070 1N4938 BAV20 1N629 FDH444 1N628 BV V Min IR nA Max
@
VR V
VF V Max
IF rnA
C pF Max
trr ns Max
Package No.
Page No.
250 240 200 200 200 200 200 150 150
100 10000 100 100 100 100 1000 50 1000
200 200 150 175 175 150 175 100 125
1.0 1.0 1.0 1.0 1.0 1.0 1.5

1.1
100 6.0 200 100 100 100 4.0 200 4.0
50 300 50 50 50 50 1000 60 1000
0035 0035 00'35 0035 00-35 00-35 00-35 00-35 00-35
3-6 3-199 3-53 3-205 3-205 3-6 3-197 3-53 3-197
2.0 5.0 5.0

-
2.5
-
1.5
2-6
High Voltage Diodes (By Descending Bv) Glass Package BV V Min 125
~20
DEVICE NO. BAY72 BAY80 BAV19 1N658 1N660 1N627 1N626
IR nA Max 100 100 100 50 5000 1000 1000
VR V 100 120 100 50 100 75 35
VF V Max 1.0 1.0 1.0 1.0 1.0 1.5 1.5
IF mA 100 150 100 100 6.0 4.0 4.0
C pF Max 5.0 6.0
trr ns Max
50
Package No. 00-35 00-35 00-35 00-35 00-35 00-35 00-35
Page No . 3-15 3-15 3-6 3-198 3-199 3-197 3-197
50 300 300 1000 1000
120 120 120 100 50
High Voltage Diodes (By Descending Bv) Leadless Glass Package Device No_ FDLL400 FDLL3070 FDLL629 FDLL444 FDLL628 FDLL658 FDLL660 FDLL627 FDLL626 Bv V Min. 200 200 200 150 150 120 120 100 50 IR nA Max. 100 100 1000 50 1000 50 5000 1000 1000
@
VR V 150 175 175 100 125 50 100 75 35
VF V Max. 1.0 1.0 1.5 1.1 1.5 1.0 1.0 1.5 1.5
IF mA 200 100 4.0 200 4.0 100 6.0 4.0 4.0
C pF Max. 2.0 5.0 2.5
ns Max. 50 50 1000 60 1000 300 300 1000
t"
Pkg. No. LL-34 LL-34 LL-34 LL-34 LL-34 LL-34
Page No. 3-53 3-205 3-197 3-53 3-197 3-198 3-199 3-197 3-197
L\--34 LL-34
1000_. LL-34
2-7
General Purpose Diodes (By Descending Bv)

Glass Package
DEVICE NO. BA128 1N462A BAV18 1N659 15920 BA218 1544 FDH900 FDH999 1N461A BA217 BA130 BAV17 1N661 15923 1N463A 15922 BAX16 1N660 15921
BV V Min 75 70 60 60 50 50 50 45 35 30 30 30 25 240 200 200 150 150 120 100
'R nA Max 100 500 100 5000 100 50 50 500 1000 500 50 100 100 10000 100 500 100 100 5000 100
VR V 50 60 50 50 50 25 10 40 25 25 10 25 20 200 200 175 150 150 100 100
VF V Max 1.0 1.0 1.0 1.0 1.2 1.0 1.15 1. 1 1.0 1.0 1.0 1.0 1.0 1.0 1.2 1.0 1.2 1.0 1.0 1.2
IF mA 50 100 100 6.0 200 10 10 100 10 100 10 10 100 6.0 200 100 200 1.0 6.0 200
C pF Max 5.0
-
trr n8 Max
-
Package No. 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 DO-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35
Page No. 3-3 3-195 3-6 3-199 3-220 3-4 3-219 3-56 3-56 3-195 3-4 3-3 3-6 3-199 3-220 3-195 3-220 3-13 3-199 3-220
50
-
5.0 6.0 3.0 5.0 10 5.0 2.0
4.0 5.0
50 300
120
-
10
-
General Purpose Diodes (By Descending Bv)

Leadless Glass Package
Device No. FDLL661 FDLL923 FDLL463A FDLL922 FDLL921
Bv V Min. 240 200 200 150 100
IR nA @ Max. 10000 100 500 100 100
VR V 200 200 175 150 100
VF V Max. 1.0 1.2 1.0 1.2 1.2
IF mA 6.0 200 100 200 200
C pF Pkg. Max. No.

LL-34 LL-34 LL-34 LL-34 LL-34
Page No. 3-199 3-220 3-195 3-220 3-220
2-8
General Purpose Diodes (By Descending Bv) Leadless Glass Package Device No. FDLL462A FDLL659 FDLL920 FDLL44 FDLL461A
Bv V Min.
IR
nA Max.
VR V
VF V Max.
IF
@
mA
C
pF Max. Pkg. No. Page No.
70 60 50 50 30
500 5000 100

50
60
50
500
50 10 25
1.0 1.0 1.2 .15 1.0
100 6.0 200 10 100
6.0 10
LL-34 LL-34 LL-34 LL-34 LL-34
3-195 3-199 3-220 3-219 3-195
Surface Mount Diodes Plastic Package ns Max.
t"
Device
Description
Bv V Min.
nA Max.
IR @ VR V
VF @ IF V mA Max.
C pF Max.
Pkg. No.
Page No.
FDSO 1200 FAMILY FDS01201 FDS01202 FDS01203 FDS01204 FDS01205
Single Single Series Common Cathode Common Anode
4.0 4.0 4.0 4.0 4.0
100 100 100 100 100
25 25 25 25 25
20 20 20 20 20
1.0 1.0 1.0 1.0 1.0
200 200 200 200 200
2.0 2.0 2.0 2.0 2.0
TO-236 TO-236 TO-236 TO-236 TO-236
3-58 3-58 3-58 3-58 3-58
50 50 50 50 50
200 200 200 200 200
100 100 100 100 100
175 175 175 175 175
1.0 1.0 1.0 1.0 1.0
200 200 200 200 200
2.0 2.0 2.0 2.0 2.0
TO-236 3-59 TO-236 3-59 TO-236 3-59 TO-236 3-59 TO-236 3-59
200 200 200 200 200
1.0 1.0 1.0 1.0 1.0
125 125 125 125 125
1.0 1.0 1.0 1.0 1.0
200 200 200 200 200
4.0 4.0 4.0 4.0 4.0
TO-236 TO-236 TO-236 TO-236 TO-236
3-60 3-60 3-60 3-60 3-60
2-9
Surface Mount Diodes Plastic Package t" ns Max. Bv V Min. IR @ VR nA V Max. VF @ IF mA V Max. C pF Max. Pkg. No. Page No.
Device
Description
FSDO 1700 FAMILY FDS01701 FDS01702 FDS01703 FDS01704 FDS01705 BAS16 BAV70 BAV74 BAV99 BAW56 Single Single Series Common Cathode. Common Anode Single Common Cathode Common Cathode Series Common Anode 0.7 0.7 0.7 0.7 0.7 6.0 6.0 4.0 6.0 6.0 30 30 30 30 30 75 70 50 70 70 50 50 50 50 50 1000
20
20 20 20 20 75 70 50 70 70
1.1 1.1 1.1 1.1 1.1 1.1 1.1 1.0 1.1 1.1
50 50 50 50 50 50 50 100 50 50
1.0 1.0 1.0 1.0 1.0 2.0 1.5 2.0 1.5 2.5
TO-236 3-61 TO-236 3-61 TO-236 3-61 TO-236 3-61 TO-236 3-61 TO-236 3-5
SOOO
100 2500 2500
TO-236 3-7 TO-236 3-8 TO-236 3-9 TO-236 3-10
Military Qualified Diodes (Numeric Order) Metal Packages BV V Min 70 150 200 80 80 200 200 250 250 IR nA Max 25 25 25 25 25 25 25 25 25 VR V 60 125 175 70 70 180 180 225 225 VF V Max 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 IF mA 20 7.0 3.0 100 100 100 100 100 100 C pF Max 6.0 6.0 6.0 trr ns Max
DEVICE NO. 1N457JAN 1N458JAN 1N459JAN 1N483BJAN 1N483BJANTX 1N485BJAN 1N485BJANTX 1N486BJAN 1N486BJANTX
Package No. DO-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35
2-10
Military Qualified Diodes (Numeric Order) continued

Metal Packages
BV DEVICE NO. 1N914JAN 1N914JANTX 1N3064JAN 1N3064JANTX 1N3595JAN 1N3595JANTX 1N3595JANTXV 1N3600JAN 1N3600JANTX 1N3600JANTXV 1N4148JAN 1N4148JANTX 1N4148JANTXV 1N4148-1JAN 1N4148-1JANTX 1N4148-1 JANTXV 1N4150JAN 1N4150JANTX 1N4150JANTXV 1N415Q-1JAN 1N415Q-1JANTX 1N415Q-1 JANTXV 1N4376JAN 1N4376JANTX 1N4454JAN 1N4454JANTX 1N4454JANTXV
1N4454-1 JAN
Min
100 100 75 75 150 150 150 75 75 75 100 100 100 100 100 100 75 75 75 75 75 75 20 20 75 75 75 75 75 75
IR nA Max
25 25 100 100 1.0 1.0 1.0 100 100 100 25 25 25 25 25 25 100 100 100 100 100 100 100 100 100 100 100 100 100 100
VR
@
VF
V
@
IF mA
10 10 10 10 200 200 200 200 200 200 10 10 10 10 10 10 200 200 200 200 200 200 50 50 10 10 10 10 10 10
Max
20 20 50 50 125 125 125 50 50 50 20 20 20 20 20 20 50 50 50 50 50 50 10 10 50 50 50 50 50 50 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
1.1 1.1
pF Max
4.0 4.0 2.0 2.0 8.0 8.0 8.0 2.5 2.5 2.5 4.0 4.0 4.0 4.0 4.0 4.0 2.5 2.5 2.5 2.5 2.5 2.5 1.0 1.0 2.0 2.0 2.0 2.0 2.0 2.0
trr n& Max

4.0 4.0 4.0 4.0 3000 3000 3000 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 0.75 0.75 4.0 4.0 4.0 4.0 4.0 4.0
Package No.
00-35 00-35 00-7 00-7 00-7 00-7 00-7 00-7 00-7 00-7 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-7 00-7 00-35 00-35 00-35 00-35 00-35 00-35
1.0 1.0 1.0 1.0 1.0 1.0
1N4454-JANTX 1N4454-1 JANTXV
2-11
Military Qualified Diode Arrays (Numeric Listing)

Ceramic Package
BV DEVICE NO. 1N5768JAN 1N5768JANTX 1N5768JANTXV 1N5770JAN 1N5770JANTX 1N5770JANTXV 1N5772JAN 1N5772JANTX 1N5772JANTXV 1N5774JAN 1N5774JANTX 1N5774JANTXV 1N6100JAN 1N6100JANTX 1N6100JANTXV 1N6101JAN 1N6101JANTX 1N6101JANTXV Configurations
V
VF
V
IF rnA
100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100
Min
60 60 60 60 60 60 60 60 60 60 60 60 75 75 75 75 75 75
Max
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
tfr ns Max
40 40 40 40 40 40 40 40 40 40 40 40 15 15 15 15 15 15
trr ns Max
20 20 20 20 20 20 20 20 20 20 20 20 5.0 5.0 5.0 5.0 5.0 5.0
Configuration
GG8 GG8 GG8 GA8 GA8 GA8 M16 M16 M16 2M8 2M8 2M8 87 87 87 87 87 87
Package No.
TO-85 TO-85 TO-85 TO-85 TO-85 TO-85 TO-85 TO-85 TO-85 TO-86 TO-86 TO-86 TO-86 TO-86 TO-86 TO-116-2 TO-116-2 TO-116-2
lfffffff+
23456789
CA8
M16
lfffffff+
3 4 5 6 8 9
CC8
2-12
Configurations
7654321
fffffff
8 9 10 11 12 13 14
S7
2M8
Military Qualified Diode Assemblies Unencapsulated Package BV V Min

75 75 75 75 75 75
DEVICE NO. 1N4306JAN 1N4306JANTX 1N4306JANTXV 1N4307JAN 1N4307JANTX 1N4307JANTXV
IR nA Max
50 50 50 50 50 50
VR V
50 50 50 50 50 50
VF V Max
1.0 1.0 1.0 1.0 1.0 1.0
IF rnA
50 50 50 50 50 50
C pF Max
2.0 2.0 2.0 2.0 2.0 2.0
trr ns Max
4.0 4.0 4.0 4.0 4.0 4.0
Package No.
00-7 00-7 00-7 00-7 00-7 00-7
Monolithic Diode Arrays (Nurnberic Listing) continued Plastic - Ceramic - Metal Packages BV V Min
60 60 60 60 60 60 60 60
DEVICE NO. FSA1410M FSA1411M FSA2002M FSA2003M FSA2500M FSA2501M FSA2501P FSA2502M
VF V Max
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
IF rnA
100 100 100 100 100 100 100 100
~VF
mV Max
15 15 15 15 15 15 15 15
trr ns Max
10
Configuration
GA8 GG8 GG8 GA8 M16 M16 M16 M16
Package No.
TO-96 TO-96 TO-85 TO-85 TO-85 TO-116-2 TO-116 TO-96
Page No.
3-82 3-82 3-82 3-82 3-84 3-84 3-84 3-84
10 10
10 10 10 10 10
2-13
Monolithic Diode Arrays (Numeric Listing)

Plastic - Ceramic - Metal Packages
DEVICE
NO.
BV V Min
60 60 60 60 60 60 60 60 60 60 60 60 60 60 60 100 100 100 100 100 100 60 60 60 60 75 75 75 75 75
VF V Max
1.0 1.0 1.0 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.3 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
IF mA
100 100 100 500 500 500 500 500 500 500 500 500 500 500 500 10 10 10
10
~VF
mV Max
15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 15 3 3
trr ns Max
10 10 10 10 10
10
Package Configuration
2M8 2M8 2M8 2M8 2M8 M16 M16 CC8 CC8 CA8 CA8 CC13 CC13 CA13 CA13 88 88 87 87 87 87
R4 R4 R4 R4
No.
Page No.
3-86 3-86 3-86 3-87 3-87 3-87 3-87 3-89 3-89 3-89 3-89 3-89 3-89 3-89 3-89 3-91 3-91 3-91 3-91 3-91 3-91 3-93 3-93 3-93 3-93 3-91 3-91 3-91 3-91 3-91
FSA2503M FSA2503P FSA2504M FSA2509M FSA2509P FSA2510M FSA2510P FSA2563M FSA2563P FSA2564M FSA2564P FSA2565M FSA2565P FSA2566M FSA2566P FSA2619M FSA2619P FSA2620M FSA2620P FSA2621M FSA2621M FSA2702M FSA2703M FSA2704M FSA2705M FSA2719M FSA2719P FSA2720M FSA2720P FSA2721M
TO116-2 TO-116 TO-86 TO-116-2 TO-116 TO-116-2 TO-116 TO-116-2 TO-116 TO-116-2 TO-116 TO-116-2 TO-116 TO-116-2 TO-116 68 98 TO-116-2 TO-116 TO-86 TO-116 TO-33 TO-72 TO-33 TO-72 68 98 TO-116-2 TO-116 TO-86
10 10 10 10
10
10 10 10 10 5 5 5 5 5 5 5 6 6 6 6
I
10 10 200 200 200 200 10 10 10 10 10
15 15 15 15 15
88 S8 87 87 87
6 6 6
6
2-14
Monolithic Diode Arrays (Numeric Listing) cont. Plastic - Ceramic - Metal Packaqes DEVICE NO. FSA2721M 1N5768 1N5770 1N5772 1N5774 1N6100 1N6101 BV V Min 75 60 60 60 60 75 75 VF V Max 1.0 1.0 1.0 1.0 1.0 1.0 1.0 IF mA 10 100 100 100 100 100 100
t:NF
mV Max 15
I" n5 Max 6 20 20 20 20 5 5
Configuration 57 CC8 CA8 M16 2M8 57 57
Package No. TO86 TO-85 TO-85 TO-85 TO-86 TO-86 TO-116-2
Page No. 3-91 3-216 3-216 3-216 3-216 3-218 3-218
Surface Mount Monolithic Diode Arrays Plastic Packages
Bv
Device No. FAS02501 FAS02503 FAS02509 FAS02510 FAS02563 FAS02564 FAS02565 FAS02566 FAS02618 FAS02718 FAS02619 FAS02620 FAS02719 FAS02720 FAS05768 FAS05770 FAS05772 FAS05774 FAS06101 V Min. 60 60 60 60 60 60 60 60 75 100 100 100 75 75 60 60 60 60 75 VF V Max. 1.0 1.0 1.3 1.3 1.3 1.3 1.3 1.3 10 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
IF
@
rnA 100 100 500 500 500 500 500 500 10 10 10 10 10 10 100 100 100 100 100
"'VF mV Max. 15 15 15 15 15 15 15 15 50 50 15 15 15 15
trr ns Max. 10 10 10 10 10 10 10 10 5.0 6.0 5.0 5.0 6.0 6.0 20 20 20 20 5.0
Config. M16 2M8 2M8 M16 CC8 CA8 CC13 CA13 S4 S4 S8 S7 S8 S7 CC8 CA8 M16 2M8 S7
Pkg. No. 14-S01C 14-S01C 14-S01C 14-S01C 14-S01C 14-S01C 16-S01C 16-S01C 8-S01C 8-S01C 16-S01C 14-S01C 16-S01C 14-S01C 8-S01C 8-S01C 8-S01C 14-S01C 14-S01C
Page No. 3-84 3-86 3-87 3-87 3-89 3-89 3-89 3-89 3-50 3-50 3-91 3-91 3-91 3-91 3-216 3-216 3-216 3-216 3-218
2-15
Zener Diodes (By Ascending Vz) Glass Package

Device
No. 1N746A 1N5226B 1N4728A 1N747A 1N5227B 1N4729A 1N748A 1N5228B 1N4730A 1N749A 1N5229B 1N4731A 1N750A 1N5230B 1N4732A 1N751A 1N5231B 1N4733A 1N752A 1N5232B 1N4734A 1N5233B 1N753A 1N5234B 1N4735A 1N754A 1N957B 1N5235B 1N4736A 1N755A 1N958B
Vz V Nom. 3.3 3.3 3.3 3.6 3.6 3.6 3.9 3.9 3.9 4.3 4.3 4.3 4.7 4.7 4.7 5.1 5.1 5.1 5.6 5.6 5.6 6.0 6.2 6.2 6.2 6.8 6.8 6.8 6.8 7.5 7.5
Tol.* vz
Zz
!1 Max.
@Iz mA
20
IR
/J. A
VR V 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 2.0 1.0 1.0 2.0 1.0 1.0 3.0 2.0 3.5 1.0 4.0 3.0 1.0 5.2 5.0 4.0 1.0 5.7
Max.
5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0
28 28 10 24 24 10 23 23 9.0 22 22 9.0 19 19 8.0

17
20 76 20 20 69 20 20 64 20 20 58 20
20
10 25 100 10 15 100 10 10 50 2.0 5.0 10 2.0 5.0 10 1.0 5.0 10 1.0 5.0 10 5.0 0.1 5.0 10 0.1 150 3.0 10 0.1 75
Po mW Pkg. Typ (Max) TA=25C No. 00-35 -.070 500 00-35 (-.070) 500
%rc
T.C.
Page
No. 3-200 3-213 3-211 3-200 3-213 3-211 3-200 3-213 3-211 3-200 3-213 3-211 3-200 3-213 3-211 3-200 3-213 3-211 3-200 3-213 3-211 3-213 3-200 3-213 3-211 3-200 3-203 3-213 3-211 3-200 3-203
-0.65 (-.065) -0.60 (-.060) .055 (.055) .043 (.030)

...
1000 500 500 1000 500 500 1000 500 500 1000 500 500 1000 500 500 1000 500 500 1000 500 500 500 1000 500 500 500 1000 500 500
00-41 00-35 00-35 00-41 00-35 00-35 00-41 00-35 00-35 00-41 00-35 00-35 00-41 00-35 00-35 00-41 00-35 00-35 00-41 00-35 00-35 00-35 00-41 00-35 00-35 00-35 00-41 00-35 00-35
53
20
17 7.0 11 11 5.0 7.0 7.0 7.0 2.0 5.0 4.5 5.0 3.5 6.0 5.5
20 49 20 20 45 20 20 20 41 20 18.5 20 37 20 16.5
.030 (.030) +.028 (.038) (.038) +.045 (+.045) +.050 +.050 (+.050) +.058 +.058
Tolerance: All zener diodes are also available in 1%, 2%, 10% and 20% tolerances.
2-16
Zener Diodes (By Ascending Vz) continued Glass Package Vz DEVICE
V
Nom
NO.
1N5236B 1N4737A 1N756A 1N959B 1N5237B 1N4738A 1N5238B 1N757A 1N960B 1N5239B 1N4739A 1N758A 1N961B 1N5240B 1N4740A 1N962B 1N5241B 1N4741A 1N759A 1N963B 1N5242B 1N4742A 1N964B 1N5243B 1N4743A 1N5244B 1N965B 1N5245B 1N4744A 1N966B 1N5246B 1N4745A 1N5247B
Tol. VZ %
Zz
Q
@IZ mA
Max
IR /-LA @ Max
VR V
T.C. PD mW %/"C Typ (Max) TA=25C
Package Page No. No.
7.5 7.5 8.2 8.2 8.2 8.2 8.7 9.1 9.1 9.1 9.1 10 10 10 10 11 11 11 12 12 12 12 13 13 13 14 15 15 15 16 16 16 17
5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0
6.0 4.0 8.0 6.5 8.0 4.5 8.0 10 7.5 10 5.0 17 8.5 17 7.0 9.5 22 8.0 30 11.5 30 9.0 13 13 10 15 16 16 14 17 17 16 19
20 34 20 15 20 34 20
3.0 10 0.1 50 3.0 10 3.0 0.1 25 3.0 10 0.1 10 3.0 10 5.0 2.0 5.0 0.1 5.0 1.0 5.0 5.0 0.5 5.0 0.1 5.0 0.1 5.0 5.0 0.1 5.0 0.1
6.0 5.0 1.0 6.2 6.5 6.0 6.5 1.0 6.9 7.0 7.0 1.0 7.6 8.0 7.6 8.4 8.4 8.4 1.0 9.1 9.1 9.1 9.9 9.9 9.9 10 11.4 11 11.4 12.2 12 12.2 13
(+.058) +.062 +.062 (+.062) (+.065) +.068 +.068 (+.068) +.075 +.072 (+.075) +.073 (+.076) +.077 +.076 (+.077) +.079 (+.079) (+.082) +.082 (+.082) +.083 (+.083) (+.084)
500 1000 500 500 500 1000 500 500 500 500 1000 500 500 500 1000 500 500 1000 500 500 500 1000 500 500 1000 500 500 500 1000 500 500 1000 500
00-35 00-41 00-35 00-35 00-35 00-41 00-35 00-35 00-35 00-35 00-41 00-35 00-35 00-35 00-41 00-35 00-35 00-41 00-35 00-35 00-35 00-41 00-35 00-35 00-41 00-35 00-35 00-35 00-41 00-35 00-35 00-41 00-35
3-213 3-211 3-200 3-203 3-213 3-211 3-213 3-200 3-203 3-213 3-211 3-200 3-203 3-213 3-211 3-203 3-213 3-211 3-200 3-203 3-213 3-211 3-203 3-213 3-211 3-213 3-203 3-213 3-211 3-203 3-213 3-211 3-213
20 14
20 8 20 12.5 20 25 11.5 20 23
20
10.5
20
21 9.5 9.5 19 9.0 8.5 8.5 17 7.8 7.8 15.5 7.4
2-17
Zener Diodes (By Ascending Vz) cont. Glass Package DEVICE NO. 1N967B 1N5248B 1N4746A 1N5249B 1N968B 1N5250B 1N4747A 1N969B 1N5251B 1N4748A 1N970B 1N5252B 1N4749A 1N5253B 1N971B 1N5254B 1N4750A 1N5255B 1N972B 1N5256B 1N4751A 1N973B 1N5257B 1N4752A Vz V Nom Tol: VZ % Zz
@IZ rnA
Max
IR /-LA Max
VR @ V
T.C. Po %/oC mW Typ (Max) TA=25C
Package Page No. No.
18 18 18 19 20 20 20 22 22 22 24 24 24 25 27 27 27 28
5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0
21 21 20 23 25 25 22 29 29 23 33 33 25 5 41 41 35 44 49 49 40 58 58 45
7.0 7.0 14 6.6 6.2 6.2 12.5 5.6 5.6 11.5 5.2 5.2 10.5 5.0 4.6 4.6 9.5 4.5 4.2 4.2 8.5 3.8 3.8 7.5
5.0 0.1 5.0 0.1 5.0 0.1 5.0 5.0 0.1 5.0 5.0 0.1 5.0 0.1 5.0 0.1 5.0 0.1 5.0 0.1 5.0 5.0 0.1 5.0
13.7 14 13.7 14 15.2 15 15.2 16.7 17 16.7 18.2 18 18.2 19 20.6 21 20.6 21 22.8 23 22.8 25.1 25 25.1
+.085 (+.085) (+.086) +.086 (+.086) +.087 (+.087) +.088 (+.088) (+.089) +.090 (+.090) (+.091) +.091 (+.091) +.092 (+.092)
500 500 1000 500 500 500 1000 500 500 1000 500 500 1000 500 500 500 1000 500 500 500 1000 500 500 1000
00-35 00-35 00-41 00-35 00-35 00-35 00-41 00-35 00-35 00-41 00-35 00-35 00-41 00-35 00-35 00-35 00-41 00-35 00-35 00-35 00-41 00-35 00-35 00-41
3-203 3-213 3-211 3-213 3-203 3-213 3-211 3-203 3-213 3-211 3-203 3-213 3-211 3-213 3-203 3-213 3-211 3-213 3-203 3-213 3-211 3-203 3-213 3-211
30 30
30 33 33 33
Tolerance: All zener diodes are also available in 1%, 2%, 10%, and 20% tolerances.
2-18
Transistor Shortform Data
Military Qualified Transistors (Numeric Order) Metal Packages Device No. NPN 2N718AJAN 2N718AJANTX 2N718AJANTXV 2N930JAN 2N930JANTX 2N1613JAN 2N1613JANTX 2N1613JANTXV 2N2218AJAN 2N2218AJANTX 2N2218AJANTXV 2N2219AJAN 2N2219AJANTX 2N2219AJANTXV 2N2060JAN 2N2060JANTX 2N2221AJAN 2N2221AJANTX 2N2221AJANTXV 2N2222AJAN 2N2222AJANTX 2N2222AJANTXV 2N2369AJAN 2N2369AJANTX 2N2369AJANTXV 2N2484JAN 2N2484JANTX 2N2484JANTXV 2N2904AJAN 2N2904JANTX 2N2904AJANTXV 2N2905AJAN 2N2905AJANTX PNP
I
I
BVCEO V hFE
@ IC\VCE
mA/V
VCE'SBtI @ Ic \'C V
Ic Max. mA/mA mA
Pkg. No.
Mil Std 19500 Slash No.
30 30 30 45 45 30 30 30 50 50 50 50 50 50 60
60
50 50 50 50 50 50 15 15 15
60
60 60 60
60 60
60
60
40-120 40-120 40-120 100-300 100-300 40-120 40-120 40-120 40-120 40-120 40-120 100-300 100-300 100-300 50-150 50-150 40-120 40-120 40-120 100-300 100-300 100-300 40-120 40-120 40-120 200-500 200-500 200-500 40-120 40-120 40-120 100-300 100-300 2-19
150/10 150/10 150/10 10/5.0 10/5.0 150/10 150/10 150/10 150/10 150/10 150/10 150/10 150/10 150/10 10/5.0 10/5.0 150/10 150/10 150/10 150/10 150/10 150/10 10/0.35 10/0.35 10/0.35 1O,.,A/1.0
10,.,A/1.0 1O,.,A/1.0
150/10 150/10 150/10 150/10 150/10
1.5 1.5 1.5 1.0 1.0 1.5 1.5 1.5 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.2 0.2 0.2 0.3 0.3 0.3 0.4 0.4 0.4 0.4 0.4
150/15 150/15 150/15 10/0.5 10/0.5 150/15 150/15 150/15 150/15 150/15 150/15 150/15 150/15 150/15 50/5 50/5 150/15 150/15 150/15 150/15 150/15 150/15 10/1.0 10/1.0 10/1.0 1.0/0.1 1.0/0.1 1.0/0.1 150/15 150/15 150/15 150/15 150/15
500 500 500 30 30 500 500 500 800 800 800 800 800 800 500 500 800 800 800 800 800 800
50 50 50 600 600 600 600 600
TO-18 TO-18 TO-18 TO-18 TO-18 TO-39 TO-39 TO-39 TO-39 TO-39 TO-39 TO-39 TO-39 T039 TO-78 TO-78 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-18 TO-39 TO-39 TO-39 TO-39 TO-39
181 181 181 253 253 181 181 181 251 251 251 251 251 251 270 270 255 255 255 255 255 255 317 317 317 376 376 376 290 290 290 290 290
Military Qualified Transistors (Numeric Order) Metal Packages

-" - -
Device No. NPN PNP 2N2905AJANTX 2N2905AJANTXV 2N2906AJAN 2N2906AJANTX 2N2906AJANTXV 2N2907AJAN 2N2907AJANTX 2N2907AJANTXV 2N2920JAN 2N2920JANTX 2N2920JANTXV 2N3019JAN 2N3019JANTX 2N3019JANTXV 2N3700JAN 2N3700JANTX 2N3700JANTXV
BVeEO V
hFE
@ le\\E
VeE,satJ @ Ie \Ie
V
rnA/V
rnA/rnA
Ie Max. rnA
Pkg. No.
Mil Sid. 19500 Slash No.
60 60 60 60
60
60 60
60
60 60 60 80 80
80
80 80
80
100-300 100-300 40-120 40-120 40-120 100-300 100-300 100-300 300-1000 300-1000 300-1000 100-300 100-300 100-300 100-300 100-300 100-300
150/10 150/10
150/10 150/10 150/10 150/10 150/10 150/10 1.0/5.0 1.0/5.0 1.0/5.0 150/10 150/10 150/10 150/10 150/10 150/10
OA OA OA OA OA OA OA 0.4 0.3 0.3 0.3 0.2 0.2 0.2 0.2 0.2 0.2
150/15 150/15
150/15 150/15 150/15 150/15 150/15 150/15 1.010.1 1.010.1 1.010.1 150/15 150/15 150/15 150/15 150/15 150/15
600 TO-39 290 600 TO-39 290 TO-18 291 TO-18 291 TO-18 291 600 TO-18 291 600 TO-18 291 600 TO-18 291 30 TO-78 355 30 To-78 355 30 TO-78 355 TO-39 391 TO-39 391 TO-39 391 TO-18 391 TO-18 391 TO-18 391
2-20
Special Quad Transistors Plastic Package Device No. NPN UNMATCHED FPQ2222 FPQ2907 FPQ3724 FPQ3725 MPQ3725 SWITCHING FPQ3904 MPQ3904 FPQ3906 MPQ3906 NPN DARLINGTON FPQ6426 MPQ6426 COMPLEMENTARY FPQ6502 MPQ6502 FPQ6700 MPQ6700 PNP
BVCEO V Min.
Min.
hFE @ IeIVCE mAIV
Max V
VCE!Sati @ Ie/Is mA/mA
Ic Max mA
!
Pkg.
I Page No.
3-63 3-64 3-65 3-65 3-65
40 40 40 50 40
100 100 30 20 200
150/10 150/10 500/1.0 500/1.0 500/1.0
0.4 0.4 0.5 0.5 0.5
150/15 150/15 500/50 500/50 500/50
500 500 1.0 A 1.0 A 1.0 A
TO-116 TO-116 TO-116 TO-116 TO-116
40 40 40 40
100 75 100 75
10/1.0 10/1.0 10/1.0 10/1.0
0.2 0.2 0.25 0.25
10/1.0 10/1.0 10/1.0 10/1.0
200 200 200 200
TO-116 TO-116 TO-116 TO-116
3-67 3-67 3-69 3-69
10,000 10,000
100/5.0 100/5.0
1.5 1.5
100/0.1 100/0.1
3-71 3-71
40 30 40 40
100 100 100 70
150/10 150/10 10/1.0 10/1.0
0.4 0.4 0.25 0.25
150/15 150/15 10/1.0 10/1.0
500 500 200 200
TO-116 TO-116 TO-116 TO-116
3-73 3-73 3-75 3-75
Connection Diagrams (Top View)

NPN DARLINGTON
C
NPN
PNP
COMPLEMENTARY
NC
NC
NC
NC
NC
NC
NC
NC
CD1
C02
CD3
CD4
2-21
NPN RF Transistors (By Descending Bv) cont. Plastic Package

Device No. FTS03563 FTS05130 MPS3563 PN3563 PN5130 FTS0918 MPS918 PN918
Pkg.
VCEO V Min.
VCBO V Min.
hFE @
rnA/V Ie/VCE
V Max.
VCE(Sall @
rnA Ie/Is
TO-236 TO-236 TO-92 TO-92 TO-92 TO-236 TO-92 TO-92
12 12 12 12 12 15 15 15
30 30 30 30 30 30 30 30
20-200 15-250 20-200 20-200 15-250 20 20 20
8.0/10 8.0/10 8.0/10 8.0/10 8.0/10 3.0/1.0 10/1.0 3.0/1.0 0.6 0.4 0.4 0.4 10/1.0 10/1.0 3.0/1.0 10/1.0 0.6 10/1.0
NPN Switches and Core Drivers (By Descending Bv) Metal - Plastic - Packages
VCEO V Min. Vcso V Min. hFE
rnA/V Ie/VCE
VCE(Sall V Max.
rnA Ie/Is
Device No. 2N3725 2N4014 2N3253 2N3724 2N4013 FTS02710 FTS03014 2N2710 2N3014 FTS0706 FTS0706A FTS02369 FTS02369A FTS03013 FTS03646 FTS04275 FTS05769 FTS05772
Pkg.
TO-39 TO-18 TO-39 TO-39 TO-18 TO-236 TO-236 TO-18 TO-52 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236
50 50 40 30 30 20 20 20 20 15 15 15 15 15 15 15 15 15
80 80 75 50 50 40 40 40 40 25 25 40 40 40 40 40 40 40
60-150 60-150 25-75 60-150 60-150 40 30-120 40 30-120 25 20-60 40-120 40-120 30-120 30-120 35-120 40-120 30-120
100/1.0 100/1.0 500/1.0 100/1.0 100/1.0 10/1.0 30/0.4 10/1.0 30/0.4 10/1.0 10/1.0 10/1.0 10/0.35 30/0.4 30/0.4 10/1.0 10/0.35 30/0.4
0.26 0.26 0.6 0.20 0.2 0.25 0.18 0.25 0.18 0.6 0.6 0.25 0.2 0.18 0.20 0.20 0.2 0.2
100/10 100/10 500/50 100/10 100/10 10/1.0 30/3.0 10/1.0 30/3.0 10/1.0 10/1.0 10/1.0 10/1.0 30/3.0 30/3.0 10/1.0 10/1.0 30/3.0
2-22
V
Max.
VaEI.stl @
COb
h
MHz Min.
ton
tOff
mA leila
10/1.0
pF Max.
ns Max.
ns Max.
NF dB
Page
No.
1.7 1.0 0.95 1.0 1.0 1.0 1.0 1.7 1.7 1.7 10/1.0 10/1.0 10/1.0 10/1.0 1.7 1.7 1.7 1.7 10/5.0
GOO
450 600
14-26 14 14-26 15 15 15 30 30 30 6.0 6.0 6.0
3-134 3-174 3-134 3-134 3-174 3-134 3-134 3-134
GOO
450 600 600 600
VaElsa!) V
Max.
COb
h
MHz Min.
ton
toll
mA leila
10/1.0 100/10 500/50 10/1.0 100/10 10/1.0 30/3.0 10/1.0 30/3.0 10/1.0 10/1.0 10/1.0 10/1.0 30/3.0 30/3.0 30/3.0 10/1.0 30/3.0
pF Max.
ns Max.
ns Max.
NF dB Max.
Page
No.
0.8 0.86 1.3 0.8 0.86 0.9 0.95 0.9 0.95 0.9 0.9 0.85 0.85 0.95 0.95 0.95 0.85 0.95
4.0 10 12 4.0 10 4.0 5.0 4.0 5.0 6.0 6.0 4.0 4.0 5.0 5.0 5.0 4.0 5.0
300 300 175 300 300 500 350 500 350 200 200 400 500 350 350 350 500 350
25 35 50 25 35 20 16 20 16 40 40 12 12 15 18 18 12 18
35 60 70 35 60 35 25 35 25 75 75 18 18 25 28 28 18 28
3-276 3-276 3-270 3-276 3-276 3-256 3-262 3-256 3-262 3-222 3-222 3-246 3-246 3-262 3-152 3-163 3-246 3-152
2-23
NPN Switches and Core Drivers (By Descending Bv) Metal - Plastic Packages Device No. MPS706 MPS706A MPS2369 MPS3646 PN2369 PN2369A PN3646 PN4275 2N706 2N2369 2N2369A 2N3013 2N5769 2N5772 BSX39 BSV52 FTS04274 FTS05224 PN4274 2N5224 FTS05134 PN5134
VCEO V
Pkg. Min.
Vcso V
Min.
hFE
mAIV
VCElsati V
Max. mA
IC/VCE
20 20-60 40-120 30-120 40-120 40-120 30-120 35-120 20 40-120 40-120 30-120 40-120 30-120 40-200 40-120
10/1.0
Ic/Is
10/1.0
10/1.0 10/1.0 30/3.0 10/1.0 10/1.0 30/3.0 10/1.0 10/1.0 10/1.0 10/1.0 30/3.0 10/1.0 30/3.0 10/1.0 10/1.0 10/1.0 10/3.0 10/1.0 10/3.0 10/1.0 10/1.0
TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-18 TO-52 TO-92 TO-92 TO-236 TO-236 TO-236 TO-236 TO-92 TO-92 TO-236 TO-92
15 15 15 15 15 15 15 15 15 15 15 15 15 15 14 12 12 12 12 12 10 10
25 25 40 40 40 40 40 40 25 40 40 40 40 40
0.6 0.6 0.25 0.20 0.25 0.20 0.20 0.20 0.6 0.25 0.2 0.18 0.2 0.2 0.25 0.25 0.20 0.35 0.20 0.35 0.25 0.25
10/1.0
10/1.0 3010.4 10/1.0 1010.35 3010.4 10/1.0 10/1.0 10/1.0 1010.35 3010.4 1010.35 3010.4 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0
30 25 30 25 20 20
35-120 40-400 35-120 40-400 20-150 20-150
2-24
VaElsaU V
Max.
rnA
Cob
IT
MHz Min.
Ion
ns Max.
toll
leila
pF Max.
ns Max.
NF dB Max.
Page No.
0.9 0.9 0.85 0.95 0.85 0.85 0.85 0.95 0.9 0.85 0.85 0.95 0.85 0.95 0.85 0.85 0.95 0.9 0.95 0.9 0.9 0.9
10/1.0 10/1.0 10/1.0 30/3.0 10/1.0 10/1.0 10/1.0 30/3.0 10/1.0 10/1.0 10/1.0 30/3.0 10/1.0 30/3.0 10/1.0 10/1.0 30/3.0 10/3.0 30/3.0 10/3.0 10/1.0 10/1.0
6.0 6.0 4.0 5.0 4.0 4.0 4.0 5.0 6.0 4.0 4.0 5.0 4.0 5.0 4.0 5.0 4.0 5.0 4.0 4.0 4.0
200 200 500 350 400 400 500 350 200 400 500 350 500 350 400 350 250 350 250 250 250
40 40 12 18 12 12 12 18 12 12 15 12 18 12 12 16 45 16 45 18 18
75 75 18 28 12 12 18 28 18 18 25 18 25 18 18 25 60 25 60 18 18
3-222 3-222 3-246 3-152 3-246 3-246 3-152 3-163 3-222 3-246 3-246 3-261 3-246 3-152 3-47 3-46 3-163 3-318 3-163 3-318 3-177 3-177
2-25
PNP Switches and Core Drivers (By Descending Bv) Metal - Glass Packages
Device No. FTS05228 2N5228 FTS03639 MPS3639 PN3639 FTS03640 FTS04208 FTS04258 MPS3640 PN3640 PN4258 2N4208 FTS05771 2N4209 2N5771
Pkg.
VCEO V Min.
Vcso V Min.
hFE
mAIV Ie/VCE
VCE(satl
V Max.
mA IclIs
TO-236 TO-92 TO-236 TO-92 TO-92 TO-236 TO-236 TO-236 TO-92 TO-92 TO-92 TO-18 TO-236 TO-18 TO-92
-5.0 -5.0 -6.0 -6.0 -6.0 -12 -12 -12 -12 -12 -12 -12 -15 -15 -15
-5.0 -5.0 -6.0 -6.0 -6.0 -12 -12 -12 -12 -12 -12 -12 -15 -15 -15
30 30 30-120 30-120 30-120 30-120 30-120 30-120 30-120 30-120 30-120 30-120 50-120 50-120 50-120
10/0.3 10/0.3 10/0.3 10/0.3 10/0.3 10/0.3 10/0.3 10/3.0 10/0.3 10/0.3 10/3.0 10/0.3 10/0.3 10/0.3 10/0.3
-0.4 -0.4 -0.16 -0.16 -0.16 -0.2 -0.15 -0.15 -0.2 -0.2 -0.15 -0.15 -0.18 -0.18 -0.18
10/3.0 10/3.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0
NPN General Purpose Amplifiers (By Descending Bv) Metal - Glass Packages Device No. FTSOA42 MPSA42 PE7059 PE7058 .FTSOA43 MPSA43 FTS05965 FTS05833 PN5965 2N5833 2N5550
Pkg.
VCEO V Min.
Vcso V Min.
hFE
mA/V IeIVCE
VCE!S"!) V Max.
mA Ie/Is
TO-236 TO-92 TO-92 TO-92 TO-236 TO-92 TO-236 TO-236 TO-92 TO-92 TO-92
300 300 300 220 200 200 180 180 180 180 140
300 300 300 220 200 200 200 200 200 200 160
40 40 40 40 50-200 50-200 50-250 50-250 50-250 50-250 60-250
30/10 30/10 30/20 30/20 30/10 30/10 10/5.0 10/5.0 10/5.0 10/5.0 10/5.0
0.5 0.5 1.0 1.0 0.4 0.4 0.2 0.2 0.2 0.2 0.15
20/2.0 20/2.0 20/2.0 20/2.0 20/2.0 20/2.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0
2-26
VeE (satl V
Max.
COb
h
MHz Min.
ton
toll
-1.25 -1.25 -1.0 -1.0 -1.0 -1.0 -0.95 -0.95 -1.0 -1.0 -0.95 -0.95 -0.95 -0.95 -0.95
mA Ie/Ie 10/3.0 10/3.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0
pF Max.
ns Max.
ns Max.
NF dB Max.
Page No.
5.0 5.0 3.5 3.5 3.5 3.5 3.0 3.0 3.5 3.5 3.0 3.0 3.0 3.0 3.0
300 300 500 500 500 500 700 700 500 500 700 700 850 850 850
75 75 60 60 60 60 15 15 60 60 15 15 15 15 15
140 140 60 60 60 75 20 20 75 75 20 20 20 20 20
3-323 3-323 3-144 3-144 3-144 3-144 3-295 3-161 3-144 3-144 3-161 3-295 3-338 3-295 3-338
VeE (saU V
Max.
Cob
h
MHz Min.
ton
tott
mA
Ielle
pF Max.
MHz Min.
ns Max.
NF ns Max.
Page No.
0.9 0.9 0.85 0.85 0.9 0.9 1.0 1.0 1.0 1.0 1.0
20/2.0 20/2.0 20/2.0 20/2.0 20/2.0 20/2.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0
3.0 3.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 4.0 6.0
50 50 40 40 50 50 100 100 100 100 100 10
3-119 3-119 3-130 3-130 3-119 3-119 3-192 3-340 3-192 3-340 3-333
2-27
NPN General Purpose Amplifiers (By Descending Bv) continued Metal - Glass Packages Device No. 2N5831 FTS05551 MPS5551 FTS05550 FTS05831 FTSOL01 MPSL01 FTS05830 2N5830 2N2405 BSS64 FTS04410 2N1893 2N3019 2N3020 2N3700 2N3701 2N4410 FTS02484 FTS03117 FTS05961 PE4020 PN2484 2N1890 2N2484 2N3107 2N3108 2N3117 2N5961 FTS04409 FTS05209 FTS05210 2N3053
Pkg.
VCEO V Min.
Vcso V Min.
hFE
mAIV Ie/VCE
VCE(Sati V Max.
mA lei Is
TO-92 TO-236 TO-92 TO-236 TO-236 TO-236 TO-92 TO-236 TO-92 TO-39 TO-236 TO-236 TO-39 TO-39 TO-39 TO-18 TO-18 TO-92 TO-236 TO-236 TO-236 TO-92 TO-92 TO-39 TO-18 TO-39 TO-39 TO-18 TO-92 TO-236 TO-236 TO-236 TO-39
140 160 160 140 140 120 120 100 100 90 80 80 80 80 80 80 80 80 60 60 60 60 60 60 60 60 60 60 60 50 50 50 50
160 180 180 160 160 140 140 120 120 120 120 120 120 140 140 140 140 120 60 60 60 60 60 100 60 100 100 60 60 80 50 50
60
80-250 80-250 80-250 60-250 80-250 50-300 50-300 80-500 80-500 60-200 20 60-400 40-120 100-300 40-120 100-300 40-120 60-400 100-500 250-500 150-700 150-950 100-500 100-300 100-500 100-300 40-120 250-500 150-700 60-400 100-300 200-600 50-250
10/5.0 10/5.0
10/5.0 10/5.0 10/5.0 10/5.0 10/5.0 10/5.0 10/5.0 150/10 1.0/10 10/1.0
0.2 0.15 0.15 0.15 0.2 0.2 0.2 0.2 0.2 0.5 0.7 0.2 5.0 0.20 0.20 0.2 0.2 0.2 0.35 0.35 0.2 0.2 0.35 5.0 0.35 0.25 0.25 0.35 0.2 0.2 0.7 0.7 1.4
10/1.0
10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 150/15 4.010.4 1.010.1 150/15 150/15 150/15 150/15 150/15
150/10 150/10
150/10 150/10 150/10
10/1.0
10JLA/5.0 10JLAl5.0 10/5.0
1.0/0.1
1.010.1 1.010.1 1010.5 1010.5 1.010.1 150/15 1.010.1 150/15 150/15 1.010.1 1010.5 1.010.1 10/1.0 10/1.0 150/15
10/5.0
10JLA/5.0
150/10
10JLA/5.0 150/1.0 150/1.0 10JLA/5.0 10/5.0 10/1.0 100JLA/5.0 100JLA/5.0 150/10
2-28
VSElsat) V
COb
h
MHz Min.
ton
toft
NF
dB Max.
mA
pF
Max.
Max.
lei Is
10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 150/15
ns Max.
ns Max.
Page
No.
3-340 3-333 3-333 3-333 3-340 3-125 3-125 3-340 3-340 3-249 3-43 3-305 3-234
1.0 1.0 1.0 1.0 1.0 1.2 1.2 1.0 1.0 1.1 0.8 1.3 1.1 1.1 1.1 1.1 0.8
4.0 6.0 6.0 6.0 4.0 8.0 8.0 6.0 6.0 15
100 100 100 100 100 60 60 100 100 50 8.0 8.0 10
1.010.1 150/15 150/15 150/15 150/15 150/15 1.010.1
12 15 12 12 12 12 12 6.0 4.5 4.0 4.0 6.0
60 50 100 80 100 80 60 60 60 100 100 60 60 60 70 60 60 100 60 30 30 100 200 200 1000 600 3.0 7.0 7.0 4.0 6.0 3.0 3.0 4.0 4.0 4.0
3-264 3-264 3-274 3-274 3-301 3-251 3-251 3-343 3-128 3-251 3-232 3-251 3-267 3-267 3-251 3-343 3-305 3-313 3-313 3-266
1.3 1.1 1.1
150/15
15 6.0 20 20 4.5 4.0
150/15 150/15
0.8
1.010.1
12 4.0 4.0
1.7
150/15
15
2-29
NPN General Purpose Amplifiers (By Descending Bv) continued Metal - Glass Packages Device No. 2N4409 2N5209 2N5210 FTS03693 FTS03694 FTS05962 MPSA18 PN930 PN3642 PN3693 PN3694 2N930 2N930A 2N2270 . 2N2586 2N5962 BCW66F BCW72 BCX70G BCX70H BCX70J BCF81 BCW81 FTS0930 FTS0930A FTS03642 BSR14 BSR17 BSS79B BSS79C FTSOA20 FTS02218A FTS02219A FTS02221A VCEO V Min. Vcso V Min. hFE mAN Ic/VcE V Max. VCEIsatl mA IclIs
Pkg.
TO-92 TO-92 TO-92 TO-236 TO-236 TO-236 TO-92 TO-92 TO-92 TO-92 TO-92 TO-18 TO-18 TO-39 TO-18 TO-92 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236
50 50 50 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 45 40 40 40 40 40 40 40 40
80 50 50 45 45 45 45 45 60 45 45 45 60 60 60 45 75 50 45 45 45 50 50 45 60 60 75 60 75 75 75 75 75 2-30
60-400 100-300 200-600 40-160 100-400 600-1400 500-1500 100-300 40-120 40-160 100-400 100-300 100-300 50-200 120-360 600-1400 100-250 200-450 120-220 180-310 250-460 420-800 420-800 100-300 100-300 40-120 100-300 50-150 40-120 100-300 40-400 40-120 100-300 40-120
10/1.0
100JLA/5.0 100JLAl5.0
0.2 0.7 0.7
1.0/0.1 10/1.0 10/1.0
10/10 10/10 0/5.0 10/5.0

10JLA/5.0
0.2 0.3 1.0 0.22
10/0.5 50/5.0 10/0.5 150/15
150/10 10/10 10/10

10JLAl5.0 10JLA/5.0
1.0 0.5 0.9 0.5 0.2 0.25 0.35 0.35 0.35 0.25 0.25 1.0 0.5 0.22 0.3 0.2 0.3 0.3 0.25 0.3 0.3 0.3
10/0.5 10/0.5 150/15 5.0/0.5 10/0.5 10/0.5 10/0.25 10/025 10/0.25 10/0.5 10./0.5 10/0.5 10/0.5 150/15 150/15 10/1.0 150/15 150/15 10/1.0 150/15 150/15 150/15
150/10
10JLA/5.0
10/5.0 100/1.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0 2.0/5.0

10JLA/5.0 10JLA/5.0
150/10 150/10 10/1.0 150/10 150/10 5.0/10 150/10 150/10 150/10
VSEISStl V
Cab
IT
MHz Min.
ton
tOff
NF
dB Max.
Page
rnA
pF
Max.
Max.
Ielis
1.010.1
ns Max.
ns Max.
No.
0.8
12 4.0 4.0 3.5 3.5 4.0 3.0
60 30 30 200 200 100 100 30 150 200 200 30 45 100 45 100 100 125 125 125 100 150 150 150 400 800 800 800 10 10 6.0 6.0 6.0 4.0 10 30 45 150 300 250 250 250 125 250 300 250 35 35 3 285 285 285 4.0 35 20 20 285 285 285 3.0 1.5
3-305 3-313 3-313 3-154 3-154 3-343 3-116 3-226 3-147 3-154 3-154 3-226 3-228 3-244 3-254 3-343 3-28 3-30 3-32 3-32 3-32 3-21 3-31 3-226 3-228 3-147 3-36 3-40 3-44 3-44 3-118 3-238 3-242 3-238
1.0
10/0.5
8.0 8.0 3.5 3.5
1.0 0.9 1.2 0.9 2.0 0.85 0.85 0.85
10/0.5 10/0.5 150/15 5.010.5
8.0 3.0 15 7.0 4.0 12 4.0 4.5 4.5 4.5 4.0 4.0
500/50
5010.25 5010.25 5010.25
1.0 0.9 1.2 0.85
10/0.5 10/0.5
8.0 3.0 8.0 8.0 8.0 8.0 4.0
150/15 10/1.0
1.2 1.2 1.2
150/15 150/15 150/15
8.0 8.0 8.0
2-31
NPN General Purpose Amplifiers (By Descending Bv) continued Metal - Glass Packages Device No. FTS02222A FTS03567 FTS03569 FTS03903 FTS03904 FTS03946 FTS04400 FTS04401 MPSA10 MPSA20 PN2218A PN2219A PN2221A PN2222A PN3567 PN3569 2N697 2N2218A 2N2219A 2N2221A 2N2222A 2N3109 2N3903 2N3904 2N3946 2N4400 2N4401 BCW60A BCW65A 2N1613 BSR13 FTS02218 FTS02219
Pkg.
VCEO V Min.
Vcao V Min.
hFE
mAlV Ie/VcE
VCElsati V Max.
mA Iclla
150/15 150/15 150/15 10/1.0 10/1.0 10/1.0 150/15 150/15 10/1.0 150/15 150/15 150/15 150/15 150/15 150/15 150/15 150/15 150/15 150/15 150/15 150/15 10/1.0 10/1.0 10/1.0 150/15 150/15 10/0.25 150/15 150/15 150/15 150/15
TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-39 TO-39 TO-39 TO-1S TO-1S TO-39 TO-92 TO-92 TO-1S TO-92 TO-92 TO-236 TO-236 TO-39 TO-236 TO-236 TO-236
40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 40 32 32 32 30 30 30
75 SO SO 60 60 60 60 60
100-300 40-120 100-300 50-150 100-300 59-150 50-150 100-300 40-400 40-400
150/10 150/1.0 150/1.0 10/1.0 10/1.0 10/1.0 150/1.0 150/1.0 5.0/10 5.0/10 150/10 150/10 150/10 150/10 150/1.0 150/1.0 150/10 150/10 150/10 150/10 150/10 150/1.0 10/1.0 10/1.0 10/1.0 150/1.0 150/1.0 2.0/5.0 100/1.0 150/10 150/10 150/10 150/10
0.3 0.25 0.25 0.2 0.2 0.2 0.4 0.4 0.25 0.3 0.3 0.3 0.3 0.25 0.25 1.5 0.3 0.3 0.3 0.3 0.25 0.2 0.2 0.2 0.4 0.4 0.35 1.5 0.4 0.4 0.4
75 75 75 45 SO SO 60 75 75 75 75 SO 60 60 60 60 60 32 60 75 60 60 60
40-120 100-300 40-120 100-300 40-120 100-300 40-120 40-120 100-300 40-120 100-300 100-300 50-150 100-300 59-150 50-150 100-300 120-200 100-250 40-120 100-300 40-120 100-300
2-32
VSE(satl
COb
h
MHz Min.
ton
ns Max.
tOft
rnA
Max.
Idls
150/15 150/15 150/15 10/1.0 10/1.0 10/1.0 150/15 150/15
pF Max.
ns Max.
NF dB Max.
Page
No.
1.2 1.1 1.1 0.85 0.85 0.9 0.95 0.95
8.0 20 20 4.0 4.0 4.0 6.5 6.5 4.0 4.0
300 56 60 250 300 250 200 250 50 125 250 300 250 300 60 60 50 250 300 250 300 70 250 300 250 200 250 125 100 60 250 250 250
35
285
3-242 3-140 3-140
70 70 335 35 35
225 250 375 255 255
6.0 5.0 5.0
3-278 3-278 3-282 3-301 3-301 3-112 3-118
1.2 1.2 1.2 1.2 1.1 1.1 1.3 1.2 1.2 1.2 1.2 1.1 0.85 0.85 0.9 0.95 0.95 0.85 2.0 1.3 1.3 1.3 1.3
150/15 150/15 150/15 150/15 150/15 150/15 150/15 150/15 150/15 150/15 150/15 150/15 10/1.0 10/1.0 10/1.0 150/15 150/15 5010.25 500/50 150/15 150/15 150/15 150/15
8.0 8.0 8.0 8.0 20 20 35 8.0 8.0 8.0 8.0 25 4.0 4.0 4.0 6.5 6.5 4.5 12 25 8.0 8.0 8.0
35 35 35 35
285 285 285 285 4.0
3-238 3-242 3-238 3-242 3-140 3-140 3-221 3-238
35 35 35 200 70 70 335 35 35 150 100
250 285 285 1000 225 250 375 255 2255 800 400 6.0 10 12 5.0 5.0 7.0 6.0
3-242 3-238 3-242 3-267 3-278 3-278 3-282 3-301 3-301 3-24 3-27 3-224 3-36 3-236 3-240
2-33
NPN General Purpose Amplifiers (By Descending Vv) Metal - Plastic Package Device No. FTS02221 FTS02222 FTS03566 FTS03641 FTS03643 FTS03704 FTS03705 FTS04123 FTS05088 MPS3704 MPS3705 PN2218 PN2219 PN2221 PN2222 PN3566 PN3641 PN3643 2N2218 2N2219 2N2221 2N2222 2N4123 2N5088 FTS02924 FTS03392 FTS03393 FTS03565 FTS04124 FTSO&089 FTS05135 FTS05172 FTS05225
Pkg.
VCEO V Min.
VCBO V Min.
hFE
mAiV lelVcE
VCElsatl V Max.
mA lellB
30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 25 25 25 25 25 25 25 25 25
60 60 40 60 60 50 50 40 35 50 50 60 60 60 60 40 60 60 60 60 60 60
40
40-120 100-300 150-600 40-120 100-300 100-300 50-150 5-150 300-900 100-300 50-150 40-120 100-300 40-120 100-300 150-600 40-120 100-300 40-120 100-300 40-120 100-300 50-150 300-900 150-300 90-180 150-600 120-360 400-1200 50-600 100-500 30-600
150/10 150/10 10/10 150/10 150/10 50/2.0 50/2.0 2.0/1.0 100j.lA/5.0 50/2.0 50/2.0 150/10 150/10 150/10 150/10 10/10 150/10 150/10 150/10 150/10 150/10 150/10 2.0/1.0
100j.lAl5.0
0.4 0.4 1.0 0.22 0.22 0.6 0.8 0.3 0.5 0.6 0.8 0.4 0.4 0.4 0.4 1.0 0.22 0.22 0.4 0.4 0.4 0.4 0.3 0.5
150/15 150/15 100/10 150/15 150/15 100/5.0 100/5.0 50/5.0 10/1.0 100/5.0 100/5.0 150/15 150/15 150/15 150/15 100/10 150/15 150/15 150/15 150/15 150/15 150/5 50/5.0 10/1.0
35 25 25 25 30 30 30 30 25 25
2.0/4.5 2.0/4.5 1.0/10 2.0/1.0

100j.lAl5.0
0.35 0.3 0.5 1.0 0.25 0.8
100/0.1 50/5.0 10/1.0 100/10 10/1.0 100/10
10/10 10/10 50/10
2-34
VSElsatl V
Max.
mA Ie/Is
150/15 150/15
Cob
pF Max.
IT
MHz Min.
ton
toft
ns Max.
ns Max.
NF dB Max.
Page
No.
1.3 1.3
8.0 8.0 25 8.0 8.0 12 12 4.0 4.0 12 12
250 250 40 150 250 100 100 250 50 100 100 250 250 250 250 40 150 250 250 250 250 250 250 50 6.0 6.0
3-236 3-240 3-138 3-147 3-147 3-99 3-99 3-291 3-311 3-99 3-99 3-236 3-240 3-236 3-240 3-138
~-147
0.95
50/5.0
1.3 1.3 1.3 1.3
150/15 150/15 150/15
8.0 8.0 8.0 8.0 25 8.0 8.0
150/15
3-147 3-236 3-240 3-236 3-240 3-291 3-311 3-94 3-95 3-95
1.3 1.3 1.3 1.3 0.95
150/15 150/15 150/15 150/15 50/5.0
8.0 8.0 8.0 8.0 4.0 4.0 12 10 10 4.0
40 300 50 40 50 5.0
0.95 1.0 1.0
50/5.0 100/10 100/10
4.0 4.0 25 10 20
3-137 3-291 3-311 3-179 3-101 3-320
2-35
NPN General Purpose Amplifiers (By Descending Vv) Metal - Plastic Package Device No. FTS06514 FTS06515 FTS06520 FTS06521 FTS06560 MPS2924 MPS3392 MPS3393 MPS5172 MPS6514 MPS6515 MPS6520 MPS6521 MPS6560 PE4010 PE8050 PN3565 PN5135 2N4124 2N5089 2N5225 BCW32 BCW33 FTS05136 FTS05137 FTS05223 FTS06561 FTS06571 MPS6561 MPS6571 PN5136 PN5137 2N5223
VCEO V
Pkg. Min.
Vcso V
Min.
hFE
mAlV
VCElsall V
Max.
mA
Ie/VcE 150-200 250-500 200-400 300-600 50-200 150-300 90-1S0 100-500 150-300 250-500 200-400 300-600 50-200 200-1000 65-200 150-600 50-600 120-360 400-1200 30-600 200-450 420-800 20-400 20-400 50-800 50-200 250-1,000 50-200 250-1,000 20-400 20-400 50-S00 2.0/10 2.0/10 2.0/10 2.0/10 500/1.0 2.0/4.5 2.0/4.5 10/10 2.0/10 2.0/10 2.0/10 2.0/10 500/1.0 1.0/10 100/1.0 1.0/10 10/10 2.0/1.0 100JLA/5.0 50/10 2.0/5.0 2.0/5.0 150/1.0 150/1.0 2.0/10 350/1.0 0.1/5.0 350/1.0 0.1/5.0 150/1.0 150/1.0 2.0/10
Ie/Is 50/5.0 50/5.0 50/5.0 50/5.0 500/50
25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 20 20 20 20 20 20 20 20 20 20 20 20
40 40 40 40 25 25 25 25 25 40 40 40 40 25 30 30 30 30 30 30 25 30 30 30 30 25
20
0.5 0.5 0.5 0.5 0.5
0.25 0.5 0.5 0.5 0.5 0.5 0.35 0.15 0.35 1.0 0.3 0.5 O.S 0.25 0:25 0.25 0.25 0.7 0.5 0.5 0.5 0.5 0.25 0.25 0.7
10/1.0 50/5.0 50/5.0 50/5.0 50/5.0 500/50 1.0/0.1 200/20 1.0/0.1 100/10 50/5.0 10/1.0 100/10 10/0.5 10/0.5 150/15 150/15 10/1.0 350/35 10/1.0 350/35 10/1.0 150/15 150/15 10/1.0
25 20 25 30 30 25
2-36
VSElsatl V
Cob
IT
MHz Min.
ton
toll
mA
Max.
Idls
pF Max.
ns Max.
ns Max.
NF dB Max.
Page
No.
3.5 3.5 3.5 3.5 30 12 10 10 10 3.5 3.5 3.5 3.5 30 4.0 0.9 1.0 0.95 1.0 200/20 100/10 50/5.0 100/10 60 40 4.0 25 4.0 4.0 20 4.0 4.0 1.1 1.1 1.2 150/15 150/15 10/1.0 35 35 4.0 30 4.5 0.5 0.5 0.25 0.25 0.7 350/35 10/1.0 150/15 150/15 10/1.0 1.1 1.1 1.2 150/15 150/15 10/1.0 40 40 150 60 50 30 4.5 35 35 4.0 60 50 40 40 150 100 40 40 300 50 50 10 10 5.0 3.0 3.0 60 60 3.0 3.0
3-102 3-102 3-104 3-104 3-107 3-94 3-95 3-95 3-101 3-102 3-102 3-104 3-104 3-107 3-127 3-132 3-137 3-179 3-291 3-311 3-320 3-23 3-23 3-179 3-179 3-316 3-107 3-109 3-107 3-109 3-179 3-179 3-316
2-37
NPN General Purpose Amplifiers (By Descending Vv) Metal - Plastic Package Device No. FTS05133 PN5133 FTS05220 2N5220 FTS04274 FTS05128 PN5128. FTS05134 FTSOA12 FTSOA13 FTSOA14 MPSA12 MPSA13 MPSA14 2N718A
Pkg.
VCEO V Min.
Vceo V Min.
hFE
mAlV lelVcE
VCElsall V Max.
mA lei Ie
TO-236 TO-92 TO-236 TO-92 TO-236 TO-236 TO-92 TO-236 TO-236 TO-236 TO-236 TO-92 TO-92 TO-92 TO-18
18 18 15 15 12 12 12 10
20 20 15 15 30 15 15 20 20 30 30 20 30 30 75
60-000 60-1000 30-600 30-600 35-120 35-350 35-350 20-150 20,000 10,000 20,000 20,000 10,000 20,000 40-120
1.8/5.0 1.8/5.0 50/10 50/10 10/1.0 50/10 50/10 10/1.0 10/5.0 100/5.0 100/5.0 10/5.0 100/5.0 100/5.0 150/10
0.4 0.4 0.5 0.5 0.20 0.25 0.25 0.25 1.0 1.5 1.5 1.0 1.5 1.5 1.5
1.0/0.1 1.0/0.1 150/15 150/15 10/1.0 150/15 150/15 10/1.0 10/0.01 100/0.1 100/0.1 10/0.01 100/0.1 100/0.01 150/15
PNP General Purpose Amplifiers (By Ascending Bv) Metal - Glass Packages
Device No. BCW29 BCW30 FTS05139 FTS05142 FTS05143 PN5139 PN5142 PN5143 FTS03638 FTS03638A FTS03702 FTS04126
Pkg.
VCEOV Min.
VCBO V Min.
hFE
mAlV lelVCE
VCElsall V Max.
mA lei Ie
TO-236 TO-236 TO-236 TO-236 TO-236 TO-92 TO-92 TO-92 TO-236 TO-236 TO-236 TO-236
-20 -20 -20 -20 -20 -20 -20
-30 -30 -20 -20 -20 -20 -20
120-260 215-500 40 30 15 40 30 15 30 100 60-300 120-360
2.0/5.0 2.0/5.0 10/-1.0 50/-1.0 300/-10 10/-1.0 50/-1.0 300/-10 50/-1.0 50/-1.0 50/-5.0 2.0/-1.0
-0.3 -0.3 -0.2 -0.5 -2.0 -0.2 -0.5 -2.0 -0.25 -0.25 -0.25 -0.4
10/0.5 10/0.5 10/1.0 50/2.5 300/30 10/1.0 50/2.5 300/30 50/2.5 50/2.5 50/5.0 50/5.0
-20
-25 -25 -25 -25
-20
-25 -25 -40 -25
2-38
VSEI,atl V
COb
IT
MHz Min.
ton
tOIl
mA
Max.
Ielis
pF Max.
ns Max.
ns Max.
NF dB Max.
Page
No.
1.1 1.1 0.95 1.1 1.1 0.9
150/15 150/15 30/3.0 150/15 150/15 10/1.0
5.0 5.0 10 10 5.0 10 10 4.0
40 40 100 100 350 200 200 250 125 125 125 125 60
16
25
18
18
1.3
150/15
25
12
3-176 3-176 3-315 3-315 3-163 3-172 3-172 3-177 3-113 3-114 3-114 3-113 3-114 3-114 3-224
VSElsat) V
Cob
IT
pF Max.
ton
tOil
mA
Max.
Idls
MHz Min.
ns Max.
NF ns Max.
dB Max.
Page
No.
-1.0 -1.5 -2.5 -1.0 -1.5 -2.5 -1.1 -1.1 -0.95
10/1.0 50/2.5 300/30 10/1.0 50/2.5 300/30 50/2.5 50/2.5 50/5.0
7.0 7.0 5.0 10 10 5.0 10 10 20 10 12 4.5
10 10 300 100 100 300 100 100 100 150 100 250 100 100 100 100 75 75 200 200 200 200 170 170 4.0
3-22 3-22 3-184 3-186 3-186 3-184 3-186 3-186 3-142 3-142 3-97 3-293
2-39
PNP General Purpose Amplifiers (By Ascending Bv) continued

Metal - Glass Packages
Device. No. FTS05226 FTS06562 pN3638 PN3638A 2N4126 2N5226 FTS03703 FTS03704 FTS03705 FTS04125 FTS04916 FTS04917 FTS05138 FTS05227 PN4916 PN4917 PN5138 2N4125 2N5227 BCW61A BCF29 BCF30 BSR15 BSS80B BSS80C FTS02904 FTS02905 FTS02906 FTS02907 FTS03251 "S03905
Pkg. TO-236 TO-236 TO-92 TO-92 TO-92 TO-92 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-92 TO-92 TO-92 TO-92 TO-92 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236 TO-236
VCEO V Min. -25 -25 -25 -25 -25 -25 -30 -30 -30 -30 -30 -30 -30 -30 -30 -30 -30 -30 -30 -32 '-32 -32
Vcso V Min. -25 -25 -25 0-600 50-200 30 100 120-360 30-600 30-150 100-300 50-150 50-150 70-200 150-300 50-800 50-700 70-200 150-300 50-800 50-150 50-700 120-220 120-260 215-500 100-300 40-120 100-300 40-120 100-300 40-120 100-300 100-300 50-150
hFE mA/V IdVcE 50/-10 500/-1.0 50/-1.0 50/-1.0 2.0/-1.0 50/-10 50/-5.0 50/2.0 50/2.0 2.0/-1.0 10/-1.0 10/-1.0 0.1/-10 2.0/-10 10/-1.0 10/-1.0 0.1/-10 2.0/-1.0 2.0/-10 2.0/5.0 2.0/5.0 2.0/5.0 150/10 150/10 150/10 150/-10 150/-10 150/-10 150/-10 10/-1.0 10/-1.0 V Max. -0.8 -0.5 -0.25 -0.25 -0.4 -0.8 -0.25 -0.6 -0.8 -0.4 -0.14 -0.14 -0.3 -0.4 -0.14 -0.14 -0.3 -0.4 -0.4 -0.25 -0.3 -0.3 -0.4 -0.3 -0.4 -0.4 -0.4 -0.4 -0.4 -0.25 -0.25
VCElsatl mA Ic/Is 100/10 500/50 50/2.5 50/2.5 50/5.0 100/10 50/5.0 100/5.0 100/5.0 50/5.0 10/1.0 10/1.0 10/0.5 10/1.0 10/1.0 10/1.0 10/0.5 50/5.0 10/1.0 10/0.25 10/0.50 10/0.50 150/15 150/15 150/15 150/15 150/15 150/15 150/15 10/1.0 10/1.0
-25 -25 -50 -50 -50 -30 -30 -30 -30 -30 -30 -30 -30 -30 -90 -32 -32 -32 -60 -75 -60
-40 -40 -40 -40 -40 -40 -40 -40

-40
-60
-60 -60 -60 -50 -40
2-40
VSElsatl V
COb
It
MHz Min.
ton
ns Max.
toft
rnA
Max.
Ie/Is
100/10 50/2.5 50/2.5 50/5.0 100/10 150/15
pF Max.
ns Max.
NF dB Max.
Page
No.
-1.0 -1.1 -1.1 -0.95 -1.0 -0.9
20 30 20 10 4.5 20 30 12 12
50 60 100 150 250 50 100 100 100 200 400 450 30 100 400 450 30 200 100 150 800 6.0 5.0 40 40 150 150 6.0 6.0 40 40 150 150 5.0 6.0 6.0 100 400 3.0 75 75 170 170 4.0
3-320 3-107 3-142 3-142 3-292 3-320 3-97 3-99 3-99 3-293 3-170 3-170 3-182 3-322 3-170 3-170 3-182 3-293 3-322 3-26 3-19 3-19
-0.95 -0.9 -0.9 -1.0 -1.0 -0.9 -0.9 -1.0 -0.95 -1.0 -0.85
50/5.0 10/1.0 10/1.0 10/0.5 10/1.0 10/1.0 10/1.0 10/0.5 50/5.0 10/1.0 10/0.25
4.5 4.5 4.5 7.0 5.0 4.5 4.5 7.0 4.5 5.0 6.0 7.0 7.0
-1.3
150/15
8.0 8.0 8.0
200 250 210 200 200 200 200 300 200
45 20 50 45 45 45 45 70 70
100 285 110 100 100 100 100 225 260 6.0 5.0
3-38 3-45 3-45 3-258 3-258 3-258 3-258 3-269 3-280
-1.3 -1.3 -1.3 -1.3 -0.6-0.9 -0.85
150/15 150/15 150/15 150/15 10/1.0 10/1.0
8.0 8.0 8.0 8.0 6.0 4.5
2-41
PNP General Purpose Amplifiers (By Ascending Bv) continued Metal - Glass Packages Device No. FTS03906 FTS04121 FTS04122 FTS04248 FTS04250 FTS04402 FTS04403 FTSOA70 FTS06518 PN2904 PN2905 PN2906 PN2907 PN3251 PN4121 PN4122 PN4248 PN4250 2N1132A 2N2904 2N2905 2N2906 2N2907 2N3905 2N3906 2N4037 2N4402 2N4403 BCF70, BCW69 BCW70 BCX71H BCX71J
Pkg.
VCEO V Min.
Vceo V Min.
hFE
VCE(Sall
rnA/V
Ic/VcE
V Max.
mA Ic/le
10/1.0 10/1.0 10/1.0 1010.5
-40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -40 -45 -45 -45 -45 -45
-40
-40
100-300 70-200 150-300 50 250-700 50-150 100-300 40-400 150-300 40-120 100-300 40-120 100-300 100-300 70-200 150-300 50 250-700 30-90 40-120 100-300 40-120 100-300 50-150 100-300 50-250 50-150 100-300 215-500 120-260 215-500 180-310 250-460
101-1.0
-0.25 -0.14 -0.14 -0.25 -0.25 -0.4 -0.4 -0.25 -0.5 -0.4 -0.4 -0.4 -0.4 -0.25 -0.14 -0.14 -0.25 -0.25 -1.5 -0.4 -0.4 -0.4 -0.4 -0.25 -0.25 -1.4 -0.4 -0.4 -0.3 -0.3 -0.3 -0.25 -0.25
10/-1.0 10/-1.0 0.1/-5.0 0.1/-5.0 150/-2.0 150/-2.0 5.0/-10 2.0/-10 150/-10 150/-10 150/-10
1501-10
-40 -40 -40

-40
10/0.5 150/15 150/15 10/1.0 50/5.0 150/15

150/15
-40 -40
-60
-60
-60
-60
-50 -40
150/15 150/15 10/1.0

10/1.0 10/1.0 1010.5 1010.5 150/15 150/15
10/-1.0 10/-1.0 10/-1.0 0.1/-5.0 0.1/-5.0 150/-10 150/-10 150/-10 150/-10 150/-10 10/-1.0 10/-1.0 150/-10 150/-2.0 150/-2.0 2.0/5.0 2.0/5.0
2.0/5.0
-40 -40 -40 -60

-60
-60
-60
150/15
150/15
-60
-40
150/15
10/1.0
-40
-60 -40
10/1.0 150/15 150/15 150/15 10/0.50 10/0.5 10/0.5 10/0.25

1010.25
-40
-50 -50 -50 -45
2.0/5.0 2.0/5.0
-45
2-42
VSEfsatl V
COb
IT
MHz Min.
ton
mA
le/ls
10/1.0 10/1.0 10/1.0
tal!
ns Max.
Max.
pF Max.
ns
Max.
NF dB Max.
Page
No.
-0.85 -0.9 -0.7-0.9
4.5 4.5 4.5 6.0 6.0
250 400 450
70
40 40
300 150 150
4.0
3-280 3-156 3-156 3-158
2.0 150 200 125 200 200 200 200 300 400 450 45 45 45 45 70 40 40 100 100 100 100 225 150 150 6.0 2.0 60 200 200 200 200 200 250 60 150 200 35 35 255 255 10 10 150 150 800 BOO 6.0 6.0 45 45 45 45 45 70 70 35 100 100 100 100 260 300 5.0 4.0 6.0 35 35 255 255
3-158 3-303 3-303 3-118 3-103 3-258 3-258 3-258 3-258 3-269 3-156 3-156 3-158 3-158 3-230 3-258 3-258 3-258 3-258 3-280 3-280 3-289 3-303 3-303 3-20 3-29 3-29 3-34 3-34
-0.95 -0.95
150/15 150/15
8.5 8.5 4.0 4.0
-1.3 -1.3 -1.3 -1.3 -0.6-0.9 -0.9 -0.7-0.9
150/15 150/15 150/15 150/15 10/1.0 10/1.0 10/1.0
8.0 8.0 8.0 8.0 6.0 4.5 4.5 6.0 6.0
-1.3 -1.3 -1.3 -1.3 -1.3 -0.85 -0.85 -0.95 -0.95
150/15 150/15 150/15 150/15 150/15 10/1.0 10/1.0 150/15 150/15
30 8.0 8.0 8.0 8.0 4.5 4.5 30 8.5 8.5 7.0 7.0 7.0 6.0 6.0
2-43
PNP General Purpose Amplifiers (By Ascending Bv) continued Metal - Plastic Packages Device No. BCX71K FTS03644 PN3644 FTS05086 FTS05087 2N5086 2N5087 BSR16 FTS02904A FTS02905A FTS02906A FTS02907A FTS03645 FTS03962 FTS04249 FTS04354 FTS04355 FTS05855 FTSOA55 PN2904A PN2905A PN2906A PN2907A PN3645 PN4249 PN4250A PN4354 PN4355 PN5855 2N2904A 2N2905A 2N2906A 2N2907A
Pkg.
VCEO V Min.
Vceo V Min.
hFE
mA/V Ie/VCE
VCEIsatl V Max.
mA Ie/Ie
-45 -45 -45 -50 -50 -50 -50
-45 -45 -45

-50
380-630 100-300 100-300 250-800 250-800 250-800 250-800 100-300 40-120 100-300 40-120 100-300 100-300 100-450 100-300 50-500 100-400 50-300 50 40-120 100-300 40-120 100-300 100-300 100-300 250-700 50-500 100-400 50-300 40-120 100-300 40-120 100-300
2.0/5.0 150/-10 150/-10 0.1/-5.0 0.1/-5.0 0.1/5.0 0.1/-5.0 150/10 150/-10 150/-10 150/-10 150/-10 150/-10 1.0/-5.0 0.1/-5.0 10/-10 10/-10 150/-10 100/-1.0 150/-10 150/-10 150/-10 150/-10 150/-10 0.1/-5.0 0.1/-5.0 10/-10 10/-10 150/-10 150/-10 150/-10 150/-10 150/-10
-0.25 -0.4 -0.4 -0.3 -0.3 -0.3 -0.3 -0.4 -0.4 -0.4 -0.4 -0.4 -0.4 -0.25 -0.25 -0.15 -0.15 -0.4 -0.25 -0.4 -0.4 -0.4 -0.4 -0.4 -0.25 -0.25 -0.15 -0.15 -0.4 -0.4 -0.4 -0.4 -0.4
10/0.25 150/15 150/15 10/1.0 10/1.0 10/1.0 10/1.0 150/15 150/15 150/15 150/15 150/15 150/15 10/.5 10/0.5 150/15 150/15 150/15 100/10 150/15 150/15 150/15 150/15 150/15 10/0.5 10/0.5 150/15 150/15 150/15 150/15 150/15 150/15 150/15
-50 -50 -50
-60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60 -60
60
-60
-60
-60
-60
-60
-60 -60
-60
-60
-60
-60
-60
-60
-60
-60
-60 -60
-60 -60 -60 -60 -60 -60
-60 -60 -60 -60 -60 -60 -60 -60
-60
-60
-60
2-44
VSElsatl V
Cob
h
MHz Min.
ton
toft
Max.
mA Ie/Is
pF Max.
ns Max.
ns Max.
NF dB Max.
Page
No.
6.0 -1.3 -1.3 150/15 150/15 8.0 8.0 4.0 4.0 4.0 4.0 1.3 -1.3 -1.3 -1.3 -1.3 -1.3 -0.9 -0.9 -0.9 -1.3 -1.3 -1.3 -1.3 -1.3 -1.3 150/15 150/15 150/15
150/15
150 200 200 40 40 40 40 200 200 200 200 200 200 40 100 100 100 100 200 200 200 200 200 45 45 45 45 40 100 100 45 45 45 45 45 40 40 40
800 100 100
6.0
3-34 3-150 3-150
3.0 2.0 3.0 2.0 100 100 100 100 100 100 3.0 3.0 400 400 3.0 3.0
3-309 3-309 3-309 3-309 3-38 3-260 3-260 3-260 3-260 3-150 3-284 3-158 3-165 3-165 3-190 3-121
8.0 8.0 8.0 8.0 8.0 8.0 6.0 6.0 30 30 15 8.0 8.0 8.0 8.0 8.0 6.0 6.0
150/15
150/15
10/0.5
150/15 150/15 150/15
150/15 150/15 150/15 150/15 150/15
100 100 100 100 100 3.0 2.0
3-260 3-260 3-260 3-260 3-150 3-158 3-158 3-165 3-165 3-190 3-260 3-260 3-260 3-260
-0.9 -0.9 -1.3 -1.3 -1.3 -1.3 -1.3
150/15
30 30 15 8.0 8.0 8.0 8.0
100 100 100 200 200 200 200
100 100 45 45 45 45
400 400 100 100 100 100
3.0 3.0
150/15
150/15 150/15 150/15 150/15 150/15
2-45
PNP General Purpose Amplifiers (By Ascending Bv) Metal - Plastic Packages Device No. 2N3962 2N4030 2N4032 2N4036 FTS04356 FTS05857 FTSOA56 PN4356 2N4031 2N4033 BSS63 FTSOL51 FTS05400 2N5400 FTS04888 FTS04889 FTS05401 PN4888 PN4889 2N5401 MPSA93 MPSA92
Pkg.
VCEO V Min.
Vcso V Min.
hFE
mA/V Ic/VcE
VCE'sa') V
Max.
mA Ielis
TO-18 TO-39 TO-39 TO-39 TO-236 TO-236 TO-236 TO-92 TO-39 TO-39 TO-236 TO-236 TO-236 TO-92 TO-236 TO-236 TO-236 TO-92 TO-92 TO-92 TO-92 TO-92
-60 -60 -60 -65 -80 -80 -80 -80 -80 -80 -100 -100 -120 -120 -150 -150 -150 -150 -150 -150 -200 -300
-60 -60 -60 -90 -80 -80 -80 -80 -80 -80 -110 -100 -130 -130 -150 -150 -160 -150 -150 -160 -200 -300
100-450 40-120 100-300 20-200 50-250 50-300 50 50-250 40-120 100-300 30 40-250 40-180 40-180 40-400 80-300 60-240 40-400 80-300 60-240 30-150 25
1.0/-5.0 100/-5.0 100/-5.0 150/-2.0 10/-10 150/-10 100/-1.0 10/-10 100/-5.0 100/-5.0 10/1.0 50/-5.0 10/-5.0 10/-5.0 10/-10 10/-10 10/-5.0 10/-10 10/-10 10/-5.0 30/-10 30/-10
-0.25 -0.15 -0.15 -0.65 -0.15 -0.4 -0.25 -0.15 -0.15 -0.15 -0.25 -0.3 -0.2 -0.2 -0.5 -0.5 -0.2 -0.5 -0.5 -0.2 -0.4 -0.5
101.5
150/15 150/15 150/15 150/15 150/15 100/10 150/15 150/15 150/5 25/2.5 50/5.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 20/2.0 20/2.0
2-46
VSEfsatl
Cob
h
MHz Min.
ton
to11
V Max.
rnA
le/lB
1010.5 150/15 150/15 150/15 150/15 150/15
pF Max.
ns Max.
ns Max.
NF dB Max.
Page
No.
-0.9 -0.9 -0.9 -1.4 -0.9 -1.3 -0.9 -0.9 -0.9 -0.9 -1.1 -1.0 -1.0 -0.9 -0.9 -1.0 -0.9 -0.9 -1.0 -0.9 -0.9
6.0 20 20 30 15 30 20 20 20 60 6.0 4.0 4.0 6.0 4.0 4.0 6.0
40 100 150 60 100 100 100 100 100 150 50 100 100 100 30 40 100 30 40 100 50 50 75 170 100 100 100 400 400 400 100 100 110 100 400 400 700 400
3.0
3-284 3-286 3-286 3-289
3.0
3-165 3-190 3-121
150/15 150/15 150/15 25/2.5 50/2.5 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 10/1.0 20/2.0 20/2.0
3.0
3-165 3-286 3-286 3-42 3-125
8.0 8.0 3.0 8.0 3.0 8.0
3-329 3-329 3-168 3-168 3-329 3-168 3-168 3-329 3-123 3-123
2-47
Phototransistors (Numeric Listing) conI. Plastic Package

VeEO le=1.0mA V Min Typ leEII!) = 5.0 V mA Typ Max VeEISa!)
VeE
= 20 mW/cm'
V Typ
t,/tf
J1.S
Device No. FPT100 FPT100A FPT100B FPT110 FPT110A FPT110B FPT120 FPT120A FPT120B FPT120C FPT130 FPT130A FPT130B FPT320
Description Plastic, Dome Lens General Purpose Plastic, Dome Lens 1:3 Sensitivity Plastic, Dome Lens 1:2 Sensitivity Plastic, Flat Lens General Purpose Plastic, Flat Lens 1:3 Sensitivity Plastic, Flat Lens 1:2 Sensitivity Plastic, Dome Lens High Sensitivity Plastic, Dome Lens 1:3 Sensitivity Plastic, Dome Lens 1:1.5 Sensitivity Plastic, Dome Lens High Sensitivity Plastic, Flat Lens High Sensitivity Plastic, Flat Lens 1:3 Sensitivity Plastic, Flat Lens 1:2 Sensitivity Plastic, Dome Lens 1 :3 Sensitivity
Min
Min
Ie Ie Ie Ie Ie Ie Ie Ie Ie Ie Ie
Max
Typ 2.8 2.8 2.8 2.8 2.8 2.8 18 18 18 18 18 18 18 18
Package No. Opto-26 Opto-26 Opto-26 Opto-28 Opto-28 Opto-28 Opto-26 Opto-26 Opto-26 Opto-26 Opto-28 Optb-28 Opto-28 Opto-26
30 30 30 30 30 30 20 15 15 11 20 15 15 20
50 50 50 50 50 50 50 30 30 20 50 30 30 50
H = 5.0 mW/cm 2 0.2 1.4 H = 5.0 mW/cm 1.0 3.0 1.4

2
= 500
0.16
J1.A 0.3 J1.A 0.3 J1.A 0.3 J1.A 0.33 J1.A 0.33 J1.A 0.33
0.55 0.55 0.55 0.55 0.55 0.55 0.55 0.55
= 500
0.16
H = 5.0 mW/cm 1.3 1.4 2.6
= 500
0.16
H = 5.0 mW/cm 2 0.2 0.88 H = 5.0 mW/cm 0.6 0.88 1.8

2
= 500
0.16
= 500
0.16
H = 5.0 mW/cm 0.8 0.88 1.6 H = 1.0 mW/cm 0.4 1.5
= 500
0.16 0.25 0.25 0.25 0.35 0.25 0.25
= 1.0 mA = 1.0 mA = 1.0 mA = 1.0 mA = 1.0 mA
H = 1.0 mW/cm2 4.5 1.5 H = 1.0 mW/cm2 4.0 2.0 H = 5.0 mW/cm2 16 25 H = 1.0 mW/cm 2 0.4 0.9 H = 1.0 mW/cm2 2.7 0.9 H = 1.0 mW/cm2 1.2 2.4 H = 1.0 mW/cm2 0.75 1.5 2.25
Ie = 1.0 mA
Ie
= 1.0 mA
0.25 0.25
Ie = 1.0 mA
Note Data Sheets: FPT100. FPT100A. FPT100B. FPT110. FPT110A. FPT110B - page 3-77. FPT120. FPT120A. FPT120B. FPT120C. FPT130. FPT130A. FPT130B - page 3,79. FPT320 - page 3-81.
2-48
Power Shortform Data
NPN Power Transistors (By Descending Bv) Metal Package

Device No. 2N3439 2N3440 2N5682 2N5681 2N5320 2N5338 2N5336 2N4239 2N5321 2N4238 2N4896 2N4237
VeEO V
Min.
Ie A
Max. Min.
hFE
Max.
Ie
mA
VeE V V
VeEIsatl V V
Ie /18
PD
25C
W
IT
MHz Min. Pkg. No. Page No.
350 250 120 100 100 100 80 80 75 60
1.0 1.0 1.0 1.0 2.0 5.0 5.0 1.0 2.0 1.0 5.0 1.0
40 40 40 40 30 30 30 15 40 30 100 30
160 160 150 150 130 120 120 250 300 150
20 20 250 250 500 2000 2000 1000 500 500 2000 250
10 10 2.0 2.0 4.0 2.0 2.0 1.0 4.0 4.0 2.0 1.0
0.5 0.5 1.0 1.0 0.5 1.2 1.2 0.6 0.8 0.6 1.0 0.6
50 50 500 500
4.0 4.0
50
10 10 10 10 10 6.0 6.0 5.0 10 5.0 4.0 5.0
5.0 5.0
TO-39 TO-39 TO-39
3-273 3-273 3-335 3-325 3-327 3-327 3-299 3-325 3-299 3-307 3-299
50 50 500 500 100 50 100 500 100
TO-39 3-335 10 TO-39 TO-39 TO-39 1.0 10 1.0 20 1.0 TO-39 TO-39 TO-39 TO-39 TO-39
SOO
5000
SOOO
1000 500 1000 5000 1000
60
40
PNP Power Transistors (By Descending Bv) Metal Package

Device No. 2N5416 2N5415 2N5680 2N5679 2N4236 2N5322 2N4235 2N5323 2N4234
VeEo V
Min.
Ie
hFE
Min. Max.
Ie
mA
A
Max.
VeE V V
VeElsatl V V
Ie /18
Po
IT
MHz Min. Pkg. No. Page No.
25C W
50 50 1000 1000 1000 500 1000 500 1000 5.0 5.0 200 200 125 50 125 50 125 10 10 10 10 6.0 10 6.0 10 6.0
-300 -200 -120 -100

-80
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
30 30 40 40 30 30 30 40 30
120 150 150 150 150 130 150 250 150
SO
50 250 250 250 500 250 500 250
-10 -10 -2.0 -2.0 -1.0 -4.0 -1.0 -4.0 -1.0
-2.0 -2.5 -2.0 -2.0 -0.6 -0.7 -0.6 -1.2 -0.6
TO-39 TO-39 TO-39 TO-39 TO-5 TO-39 TO-5 TO-39 TO-5
3-331 3-331 3-335 3-335 3-297 3-325 3-297 3-325 3-297
-75
-60
-50 -40
2-49
NOTES
Device Selection Guides Product Information
FAIRCHILD
BA128/BA130
General Purpose Diodes
WIV ... 50 V (BA128), 25 v (BA130) IR ... 100 nA (MAX) @ WIV ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (10 seconds) Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage -65C to +200C 175C 260C
PACKAGES BA128 BA130
DO-35 DO-35
500 mW 3.33 mW/oC
BA128 BA130
10 IF if if (surge)
Average Rectified Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current Pulse Width = 1 s Pulse Width = 1 "'s
50 V 25 V 200 mA 500 mA 600 mA 1.0 A 4.0 A.
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) BA128 SYMBOL VF CHARACTERISTIC Forward Voltage MIN 0.73 0.'63 0.51 0.40 MAX 1.00 0.79 0.64 0.52 100 100 100 100 BV C
NOTES:
BA130 MIN 0.69 0.56 0.45 0.34 MAX 1.00 0.71 0.58 0.47 UNITS V V V V V nA nA ",A ",A V V 2.0 pI TEST CONDITIONS IF=50mA IF = 10 mA IF = 1.0 rnA IF = 0.1 rnA IF = 0.01 rnA VR VR VR VR = = = = 50 25 50 25 V V V, TA = 100C V, TA = 100C
IR
Reverse Current
Breakdown Voltage Capacitance
75 30 5.0
IR = 100 ",A IR = 5 ",A VR = 0, I = 1.0 MHz
1. These ratings af.limiting values above which the serviceability of the diode may be impaired. 2. Theae are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. For product family characteriatic curves. refer to Chapter 4, 04.
3-3
FAIRCHILD
A Schlumberger Company,
BA217/BA218
WIV ... 10 V to 100 V
PACKAGES
trr ... 4n8 (MAX) BA216-218

ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junclion Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage IF If Continuous Forward Current Peak Repetitive Forward Current if(surge) Peak Forward Surge Current Pulse Width = 1 s Pulse Width = 1 /lS -65C to +200C +175C +260C
BA217 BA218
DO-35 DO-35
500mW 3.33 mW/oC
BA2l8
50 V
BA217
30 V 100mA 300mA 400mA 1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF CHARACTERISTIC Forward Voltage 1.50 1.00 0.70 IR Reverse Current BA217 BA218 BA217 BA218 nA nA nA nA nA nA nA pF ns ns
NOTES.
1. 2. 3. 4. 6. The ratinge are IImttlng value. above which the rYlce.blllty of the diode may be impaired. The are steady atate Ilmlta. The factory should be consulted on applicationa involving pul.ed or low duty-cycle operation. Recovery to IR 1 mAo Recovery to 'R 3 mAo For product family characterietic curv, ref.r to Chapter 4, 04
BA217 BA218 MIN MAX UNITS TEST CONDITIONS IF = 100 mA IF = 50 mA IF = 15 mA IF = 10 mA IF = 3.0 mA IF=1.0mA IF = 0.2 mA VR VR VR VR VR VR VR = = = = = = = 10V 10V 25 V 30 V 50 V 50 V 100 V
I
50 50 200 200
C trr
Capacitance Reverse Recovery Time
3.0 4.0
VR = 0, f = 1 MHz IF = 10 mA, IR = 80 mA RL" 100 n (Note 3) IF = 30 mA, IR .. 30 mA RL - 100 n (Note 4)
3-4
FAIRCHILD
BAS16
Switching Diode
Po ... 350 mW @ TA
= 25C
Connection Diagram
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures
Storage Temperature -55 C to 150 C 150C Operating Junction Temperature

Power Dissipation (Note 2) Total Dissipation at 25 C Ambient Temperature Voltages & Currents
0.350 W'
VR IF IFM
Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current
75V 200 mA 500 mA
PACKAGE
BAS16
TO-236AA/AB
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 4)
SYMBOL CHARACTERISTIC Reverse Voltage Leakage Current IR
MIN
MAX 1.0 50 30 715 855 1100 1300 2.0 1.75 6.0 45
UNITS
TEST CONDITIONS VR = 75 V VR = 75 V, TJ = 150C VR = 25 V, TJ = 150C IBR = 100 J.lA IF IF IF IF = = = = 1.0 mA 10 mA 50 mA 100 mA
poP. poP. poP.

V mV mV mV mV pF V ns pC
VIBRl VF
Reverse Breakdown Voltage Forward Voltage
75
Co VFR tIT
Diode Capacitance Forward Recovery Voltage Reverse Recovery Time Stored Charge
VR=O,f=1.0MHz IF = 10 mA, t, = 20 ns IF = IR = 10 mA, RL = 100 IF = 10 mA to VR = 5.0 V, RL = 500 n
as
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 Cand junction-to-ambient thermal resistance of 357 0 ClW (derating factor of 2.8 mW/o C). 4. For product family characteristic curves. refer to Curve Set D-4. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-5
F=AIRCHIL.O
BAV17/BAV18/BAV19 BAV20/BAV21
VF ... 1.0 V (Max) @ 100 mA IR ... 100 nA @ WIV ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage BAV BAV BAV BAV BAV 17 18 19 20 21 20 V 50 V 100 V 150 V 200 V 100 mA 300 mA 400 mA 4A 1A -65C to +200C +175C +260C
PACKAGES
BAV17 BAV18 BAV19 BAV20 BAV21
DO-35 DO-35 DO-35 DO-35 DO-35
500 mW 3.33 mW/oC
10 IF if if(surge)
Average Rectified Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current Pulse Width= 1 /lsec. Pulse Width= 1 sec.
ELECTRICAL CHARACTERISTICS (25'C Ambient Temperature unless otherwise noted) SYMBOL VF IR CHARACTERISTIC Forward Voltage Reverse Current BAV 21 BAV 20 BAV 19 BAV 18 BAV 17 BV Breakdown Voltage BAV BAV BAV BAV BAV 21 20 19 18 17 250 200 120 60 25 1.5 5.0 50 5.0 MIN TYP MAX 1.00 1.25 100 15 100 15 100 15 100 15 100 15 UNITS V V nA /lA nA /lA nA /lA nA /lA nA /lA V V V V V pF ns !) TEST CONDITIONS IF=100 mA IF=200 mA VR=200 V VR=200 V, TA=100C VR=150 V VR=150V, TA=100'C VR=100 V VR=100 V, TA=100C VR=50 V VR=50 V, TA=100'C VR=20 V VR=20 V, TA=100C IR=100 /lA IR=100 /lA IR=100 "A IR= 100 "A IR=100"A VR=O,f= 1 MHz If=30mA,l r =30mA, RL = 100!) IF=10mA
C Irr dill
Capacitance Reverse Recovery Time (Note 3) Differential Resistance
NOTES: 1. These ratings are limiting values above which the serviceability of the diode may be impaired 2. Thesa are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. Recovery to IR=3 rnA. 4. For prOduct family characteristic curves, refer to Chapter 4 BAY 17/18 D4, BAY 19/20/21 D1.
3-6
FAIRCHILD
BAV70
Switching Diode
Connection Diagram, ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55C to 150C Operating Junction Temperature 150C Power Dissipation (Note 2) Total Dissipation at 25C Ambient Temperature Voltages & Currents VR Continuous Reverse Voltage IF Peak Forward Current IFM Peak Forward Surge Current
0.350 W'
~
2
I
TO-236AAI AB
70V 200 mA 500 mA
PACKAGE BAV70
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 4) SYMBOL CHARACTERISTIC IR Reverse Voltage Leakage Current MIN MAX 60 5.0 100 70 715 855 1100 1300 1.5 6.0 UNITS p.A p.A p.A V mV mV mV mV pF ns TEST CONDITIONS VR = 25 V, TJ = 150C VR = 70 V, VR = 70 V, TJ = 150C IcsRI = 100 p.A IF=1.0mA IF = 10 mA IF = 50 mA IF = 100 mA VR= 0, f = 1.0 MHz IF = IR = 10 mA, VR = 5.0 V IRCRECI = 1.0 mA
VISRI VF
Or
t"
Diode Capacitance Reverse Recovery Time
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150' C and junction-to-ambient thermal resistance of 357' ClW (derating factor of 2.8 mW/' C). 4. For product family characteristic curves, refer to Curve Set 0-4. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-7
F=AIRCHILO
BAV74
Switching Diode
Po ... 350 mW @ TA
= 25C
Connection Diagram
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature _55 C to 1S0 C Operating Junction Temperature 1S0C Power Dissipation (Note 2) Total Dissipation at 2S0 C Ambient Temperature Voltages & Currents VR Continuous Reverse Voltage IF Peak Forward Current IFM Peak Forward Surge Current
0.350 W'
~
1 2
SOV 200 rnA SOO rnA
PACKAGE BAV74
TO-236AAIAB
ELECTRICAL CHARACTERISTICS (2S0C Ambient Temperature unless otherwise noted) (Note 4)
SYMBOL CHARACTERISTIC Reverse Voltage Leakage Current IR V1BRI VF CT trr Reverse Breakdown Voltage Forward Voltage Diode Capacitance Reverse Recovery Time
MIN
MAX 100 0.1 1.0 2.0 4.0
UNITS
pA pA
TEST CONDITIONS VR = 50 V, TJ VR = 50 V IBR IF
= 1S0C
50
V V pF ns
= S.O pA = 100 rnA VR = 0, f = 1.0 MHz IF = IR = 10 rnA, RL = 100 n IRIREcl = 1.0 rnA, measured at IR = 1.0 rnA
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 3570 ClW (derating factor of 2.8 mWfO C). 4. For product family characteristic curves. refer to Curve Set D-4. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-8
FAIRCHILD
BAV99
Dual Series Switching Diode
PD
350mW@TA=25C
Connection Diagram
ABSOLUTE MAXIMUM RATINGS (Note 1)

Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Note 2) Total Dissipation at 25 C Ambient Temperature Voltages & Current VR Continuous Reverse Voltage IF Peak Forward Current IFM Peak Forward Surge Current
-55 C to 150 C 150 C
0.350 W*
n
1
I
TO-236AA/AB
70 V 100 mA 500 mA
PACKAGE BAV99
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 4) SYMBOL CHARACTERISTIC IR Reverse Voltage Leakage Current MIN MAX 30 2.5 50 70 715 855 1100 1300 1.5 6.0 UNITS !J.A !J.A !J.A V mV mV mV mV pF ns TEST CONDITIONS VR = 25 V, TJ = 150C VR = 70 V VR = 70 V, TJ = 150C IBR = 100 ~ IF=1.0mA IF = 10 mA IF = 50 mA IF = 100 mA VR= 0, f = 1.0 MHz IF = IR = 10 mA, IRIREC) = 1.0 mA
VIBR) VF
CT trr
NOTES:
1.
These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired.
2. 3. 4.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. These ratings give a maximum iunction temperature of 1500 Cand junction-to-ambient thermal resistance of 357" C/W (derating factor of 2.8 mWr C). For product family characteristic curves, refer to Curve Set D-4. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-9
FAIRCHILD
BAW56
Dual Switching Diode
Po ... 350mW@TA=25C
Connection Diagram
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperatu re Operating Junction Temperature Power Dissipation (Note 2) Total Dissipation at 25 C Ambient Temperature Voltages & Current VR Continuous Reverse Voltage IF Peak Forward Current IFM Peak Forward Surge Current
-55 to 150 C 150 C
0.350 W*
70 V 200 mA 200 mA
PACKAGE BAW56
TO-236AAIAB
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 4) SYMBOL CHARACTERISTIC IR Reverse Voltage Leakage Current MIN MAX 30 2.5 50 70 715 855 1100 1300 2.5 6.0 UNITS TEST CONDITIONS VR = 25 V, TJ = 150C VR = 70 V VR = 70 V, TJ = 150C ISR = 100
JJA JJA JJA

V mV mV mV mV pF ns
VIBR) VF
JJA
IF=1.0mA IF = 10 mA IF = 50 mA IF = 100 mA VR = 0, f = 1.0 MHz IF = IR = 10 mA, IRIREC) = 1.0 mA
CT t"
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150' C and junction-to-ambient thermal resistance of 357' C/W (derating factor of 2.8 mWI'C). 4. For product family characteristic curves, refer to Curve Set D-4. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-10
FAIRCHILD
BAW7S/BAW76
High Speed Computer Diodes
I rr ... 4 n. (max) C ... 4 pf (max) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperature. Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage -65C to +200C +175C +260C
PACKAGES
BAW75 BAW76
00-35 00-35
500 mW 3.33 mW/oC
BAW 75 BAW 76
10 IF if if (surge)
Average Rectified Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current Pulse Width '= 1 s Pulse Width = 1 f.lS
25V 50V 100 mA 300 mA 400mA

1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) BAW75 SYMBOL VF IR CHARACTERISTIC Forward Voltage Reverse Current MIN MAX 1.0 1.0 100 100 100 100 BV C trr Breakdown Voltage Capacitance Reverse Recovery Time 35 4.0 4.0 2.0
NOTES:
BAW76 MIN MAX UNITS V V nA nA p.A p.A V 2.0 4.0 2.0 pf ns ns TEST CONDITIONS IF = 30 rnA IF = 100 rnA VR VR VR VR = = = = 25 50 25 50 V V V, TA = 150C V, TA = 150C
75
IR = 5.0 p.A VR = 0, I = 1 MHz If = Ir = 10 rnA Recovery to 1 rnA If = 10 rnA, VR = 6 V, RL=loo0
1. The.8 ratings are limiting valuea above which the serviceability of the diode may be impaired. 2. The r. steady ,tat. limit . The factory should be consulted on applications involving pulsed or low 3. For product family characteristic curve., refer to Chapter 4, 04.
duty~cycle
operation.
3-11
FAIRCHILD
BAX13
High Speed Switching Diode
c ... 3.0 pF (MAX)

t rr ... 4.0 ns (MAX)
PACKAGE
BAX13
00-35
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Operating Junction Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25C Ambient Linear Derating Factor (from 25C) Maximum Voltages and Currents Repetitive Peak Reverse Voltage VRRM Reverse Voltage VR Average Rectified Current 10 Forward Current IF Recurrent Peak Forward Current if Peak Forward Surge Current IFSM Pulse Width = 1.0 s Pulse Width 1.0 /LS -65C to +200C +175C +260C
500mW 3.33 mW/C
50 V 50V 100mA 300 mA 400 mA 1.0 A 4.0A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF CHARACTERISTIC Forward Voltage MIN MAX 0.7 0.8 1.0 1.53 25 10 50 200 25 3.0 4.0 45 UNITS V V V V nA p.A nA nA p.A pF n8 pC TEST CONDITIONS IF IF IF IF
IR
Reverse Current
C trr aS
NOTES.
Capacitance Reverse Recovery Time Recovered Charge
= 2.0 mA = 10 mA, TA = 100C = 20 rnA. = 75 rnA. VR = 10 V VR = 10 V, TA = 150C VR = 25 V VR = 50 V VR = 50 V, TA = 150C VR = 0, f = 1.0 MHz If = 10 rnA, Vr = 6.0 V, RL = 1000, Ir = 1.0 rnA If = 10 rnA, Vr = 5.0 V, RL = 5000
1. The ratings are limiting value. above which the "Nlceabillty of any Individual.emiconductor device may be impaired. 2. The.e are ateady atate limitl. The factory should be consulted on applications involving pulsed or low duty cy.cle operations. 3. For product family characteristic curve., refer to Chapter 4. 04.
3-12
FAIRCHIL.O
BAX16
General Purpose Industrial Diode
BV ... 180 V (MIN) @ 100 /LA IR ... 100 nA (MAX) @ 150V ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures . Storage Temperature Range Maximum Junction Operating Temperalure Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage 10 Average Rectified Current IF Continuous Forward Current if Peak Repetitive Forward Current if(surge) Peak Forward Surge Current Pulse Width 1S Pulse Width = 1 liS -65C to +200C +175C +260C
PACKAGE
BAX16
00-35
500 mW 3.33 mW/oC
150 V 200 mA 500 mA 600 mA 1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF CHARACTERISTIC Forward Voltage MIN MAX 1.5 1.4 1.3 0.85 0.65 100 100 25 25 180 10 120 700 UNITS V V V V V nA /LA nA /LA V pf ns pC TEST CONDITIONS IF = 200 mA IF = 200 mA, TA = 175C IF = 100 mA IF = 10 mA, TA = 100C IF = 1 mA
IR
Reverse Current
BV C trr
Breakdown Voltage Capacitance Reverse Recovery Time (Note 3) Stored Charge
as
= 150 V = 150 V, TA = 150C = 50 V = 50 V, TA = 150C IR = 100/LA VR = 0, f = 1 MHz IF = 30 mA, IR = 30 mA RL = 100 n IF = 10 mA, VR = 5 V RL = 500 n
VR VR VR VR
NOTES. 1. These ratings are limiting values above which the serviceability of the diode may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duly-cycle operation. 3. Recovery to 'R "" 3 rnA. 4. For product family characteristic curves, refer to Chapter 4, D 1.
3-13
FAIRCHILD
BAY71
Fast Switching Diode
t rr ... 4.0 n8 (MAX) C ... 2.0 pF (MAX) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Max Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25C Ambient Linear Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage 10 Average Rectified Current Forward Current Steady State DC IF if Recurrent Peak Forward Current if(surge) Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width 1.0!,s -65C to +200C +175C +260C
PACKAGE
BAY71
00-35
500mW 3.33 mW/oC
35 V 100 rnA 300 rnA 400 rnA 1.0 A 4.0A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF CHARACTERISTIC Forward Voltage MIN 0.76 0.69 0.57 0.46 MAX 1.00 0.88 0.69 0.56 100 100 50 2.0 3.0 40 65 50 45 2.0 UNITS V V V V nA ,.A V ns V ns pC pC
%
TEST CONDITIONS IF IF IF IF = = = = 20 rnA 10 rnA 1.0 rnA 0.1 rnA
IR BV trr Vir tlr
Reverse Current Breakdown Voltage Reverse Recovery Time (Note 5) Forward Recovery Peak Voltage (Note 3) Forward Recovery Time (Note 3) Stored Charge (Note 4) Rectilication Efficiency (Note 6) Capacitance
VR = 35 V VR = 35 V, TA = 125C IR = 5.0,.A IF = 10 rnA, IR = 6.0 rnA, RL = 100 n, VR = 6.0 V IF = 100 rnA (pulsed) IF = 100 rnA (pulsed) IF = 20 rnA, IR = 2.0 rnA IF = 10 rnA, IR = 1.0 rnA 1= 100 MHz VR = 0, I = 1.0 MHz
Os
RE C
pF
NOTES: 1. The maximum rating. afe limiting valuea above which lif. or satisfactory performance may be impaired. 2. These are .teady atate limits. The factory should be consulted on applications involving pulsed or low duty cycle operationa. 3. The oscilloscope uled 8S the response detector shall have a bandwidth of at least 10 MHz (3 dB down), and shall be calibrated using a deposited carbon resistor of 50 n in the diode teat clipl. tfr Is defined the difference between the 10% point of the pulse and the point where VF is to within 10% of the quielcent value. 4. Measured on the Taktronix "S" unit. 5. Recovery to 1.0 mAo 6. Rectiftcation efficiency il defined al the ratio of de load voltage to peak rf input voltage to the detector circuit, meaaured with 2.0 V rma input to the circuit. Load reliltance 6.0 kS), 10ld capacitance 20 pF. 7. For product family curvel, ref.r to Chapter 4, 04.
.1
3-14
FAIRCHILO
BAY72/BAY80
General Purpose High Conductance Diodes
VF ... 1.0V (MAX) @ 100 mA (BAY72) VF ... 1.0V (MAX) @ 150 mA (BAYSO) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage -65C to +200C +175C +260C
PACKAGES
BAY72 BAY8D
DO-35 DO-35
500 mW 3.33 mW/oC
BAY 72 BAY 80
10 IF if if(surge)
Average Rectified Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current Pulse Width = 1 s Pulse Width = 1 J.LS
100 V 120 V 200 mA 500 mA 600mA 1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperalure unless otherwise noted) BAY 72 SYMBOL VF CHARACTERISTIC Forward Voltage 0.78 0.73 0.63 0.51 IR Reverse Current 100 100 BV C trr Vir Vfr tfr Os RE Breakdown Voltage Capacitance Rev. Rec. Time (note 3) (note 4) Fwd. Rec. Voltage (note 5) Fwd. Rec. Voltage (note 5) Fwd. Rec. Time (note 5) Stored Change (note 6) Rect. Efficiency (note 7) 35 125 5.0 50 400 2.5 2.5 50 250 150 6.0 60 1.00 0.92 0.78 0.64 100 150 MIN MAX BAY 80 MIN MAX 1.00 UNITS V V V V V nA /lA nA /lA V pF ns ns TEST CONDITIONS IF IF IF IF IF
= = = = =
150 mA 100 mA 50 mA 10 mA 1.0 mA
VR=120V VR = 120 V, TA = 100C VR = 100 V VR = 100 V, TA = 125C IR = 100/lA VR = 0, f = 1 MHz If =I r = 30 mA, RL = 75 If = 30 mA, VR = 35 V RL = 2.0
v
V ns pC
%
Kn,
CL = 10 pF
If = 100 mA (pulsed) If = 100 mA (pulsed) If = 20 mA, Ir = 1.0 mA f = 100 MHz
NOTES: 1. These ratings are ,limiting values above which the serviceability of the diode may be impaired. 2. These are steady slate limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. Recovery to 1.0 rnA. 4. Recovery to 400 kO, Jan 256 Circuil. 5. The oscilloscope used as the response detector shall have a bandwidth of at least 10 MHz (3 dB down), and shall be calibrated using a deposited carbon resistor of 50 n in the diode test clips. tfr is defined a8 the difference between the 10% point of the pulse and the point where VF is to be within 10% of the quie$cent value. Pulse conditions shall be 0.1 ~s wide at base. 20 ns maximum rise time. repetition rate = 100 kHz max. 6. Measured on the Tektronix "S" unit. 7. Rectification efficiency is defined as the ratio of dc load voltage to peak rf input to the circuit. Load resistance of 5.0 kG. load capacitance 20 pF. 8. For product family characteristic curves, refer to Chapter 4, 01.
3-15
FAIRCHILO
BAY73/BA129
High Voltage Low Leakage Diodes
BV ... 125 V (MIN) @ 100 /LA (BAY73) BV ... 200 V (MIN)@ 100 /LA (BA129) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage -65C to +200C +175C +260C
PACKAGES
BAY73 BA129
00-35 00-35
500 mW 3.33 mW/oC
BAY73 BA129
10 IF if if(surge)
Average Rectified Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current Pulse Width = 1 s Pulse Width = 1 /LS
100 V 180 V 200 mA 500 mA 600 mA 1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) BAY73 SYMBOL VF CHARACTERISTIC Forward Voltage MIN 0.85 0.81 0.78 0.69 0.67 0.60 MAX 1.00 0.94 0.88 0.80 0.75 0.68 500 5.0 1.0 10 5.0 BV C Breakdown Voltage Capacitance Reverse Recovery Time 125 8.0 3.0 200 6.0 8A129 MIN MAX UNITS V V V V V V V nA nA /LA nA /LA V pi /Ls TEST CONDITIONS IF IF IF IF IF IF IF = 200 mA = 100 mA =50 rnA = 10 mA = 5.0 mA = 1.0 mA = 0.1 mA
0.78 0.69 0.60 0.51
1.00 0.83 0.71 0.60
IR
Reverse Current
VR = 20 V, TA = 125C VR = 100 V VR = 100 V, TA = 125C VR = 180 V VR = 180V, TA = 100C IR
VR
Irr
= 100 /LA = 0, f = 1.0 MHz II = 10 mA, Vr = 35 V

RL = 1.0 to 100 Kfl CL = 10 pi, JAN 256
NOTES: 1. These ratings are limiting values above which the serviceability of the diode may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulses or low duty-cycle operation. 3. For product family characteristic curves, refer to Chapter 4, 02
3-16
FAIRCHILO
BAY74
High Conductance Ultra Fast Diode
t rr ... 4.0 R8 (MAX) C ... 3.0 pF (MAX)
PACKAGE BAY74
00-35
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Operating Junction Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25 C Ambient Linear Deviation Factor (from 25 C) Maximum Voltage and Currents WIV Working Inverse Voltage 10 Average Rectified Current IF Continuous Forward Current if Recurrent Peak Forward Current if (surtle) Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 JJ.s -65 C to +200 C +175 C +260 C
500 mW 3.33 mW
35 V 100 mA 300 mA 400 mA 1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambienl Temperalure unless olherwise noled} SYMBOL VF CHARACTERISTIC Forward Vollage MIN 0.85 0.82 0.78 0.73 0.65 0.54 MAX 1.10 1.00 0.93 0.88 0.77 0.65 100 100 50 3.0 4.0 6.0 6.0 UNITS V V V V V V nA ,.A V pF ns ns ns TEST CONDITIONS IF IF IF IF IF IF = = = = = = 300 mA 200 mA 100 mA 50 mA 10 mA 10 mA
IR BV C Irr Irr
Reverse Currenl Breakdown Vollage Capacilance Reverse Recovery Time (Nole 4) Reverse Recovery Time (Nole 3)
VR = 35 V VR = 35 V,TA = 125 C IR = 5.0,.A VR =0, f = 1.0 MHz If = Ir = 10 mA 10 200 mA If = Ir = 200 mA 10 400 mA If = 10 mA, Ir = 1.0 mA
NOTES. 1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired. 2. These afe steady-state limits. The factory should be consulted on applications involving pulses or low duty-cycle operations.
3. 4. 5. Recovery to 0.1 rnA. Recovery to 10% of For product family characteristic curves, refer to Chapter 4, 04.
'f-
3-17
FAIRCHILD
BAY82/1N4244 1N4376
Ultra Fast Switching Diodes
t rr ... 750 ps (MAX) C ... 0.8 pF (MAX) 1N4244
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Tolal Power Dissipation at 25C Ambient Linear Power Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage 10 Average Rectified Current IF Continuous Forward Current if Peak Repetitive Forward Current if(surge) Peak Forward Surge Current Pulse Width 1s
PACKAGES BAY82 1N4244 1N4376

-65C to +200C +175C +260C
00-7 00-7 00-7
250mW 1.67 mW/oC
10 V (12 V BAY82)
50 mA 150 mA 150 mA 250 mA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) BAY82 SYMBOL VF CHARACTERISTIC Forward Voltage MIN 0.90 0.80 0.77 0.64 0.53 0.41 MAX 1.35 1.00 0.94 0.79 0.66 0.53 lN4244 MIN MAX 1.00 1N4376 MIN 0.89 0.81 0.76 0.64 0.52 0.42 MAX 1.10 0.95 0.88 0.74 0.61 0.50 100 100 UNITS V V V V V V nA /LA nA /LA nA V 1.0 750 pF ps TEST CONDITIONS IF IF IF IF IF IF = = = = = = 50 rnA 20 rnA 10 rnA 1.0 rnA 0.1 rnA 10 /LA 10 V 10V,TA= 150C 12 V 12 V, TA = 100C 15 V
IR
Reverse Current 100 50
100 100
250 BV C Irr Breakdown Voltage Capacitance Reverse Recovery Time (Note 3) 15 1.3 750 20 0.8 750 20
VR = VR= VR = VR = VR =
IR = 5.0 /LA VR = 0, f = 1 MHz If = Ir = 10 rnA RL = 100 n
NOTES, 1. These ratings are limiting I/slues above which the serviceability of the diode may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. Recovery to Ir 0::: 1.0 rnA. 4. For product family characteristic curves, refer to Chapter 4, 03.
3-18
FAIRCHILD
BCF29/BCF30
PNP Low Noise Transistor
hFE ... BCF29 120-260, BCF30 215-500 Vceo ... -32 V (Max) NF ... 4.0 dB (Max)
PACKAGE BCF29 BCF30
TO-236AAlAB TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage Vceo Collector to Base Voltage VCES Collector to Emitter Voltage VEBO Emitter to Base Voltage Ic Collector Current ICM Collector Current
-SSO C to 150 C
150C
0.350 W*
-32 V -32 V -32 V -5.0 V 100 mA 200 mA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Iceo Collector Cutoff Current BCF29 MIN MAX 100 10 120 260 -0.6 0.3 7.0 4.0 215 BCF30 MIN MAX 100 10 500 -0.75 0.3 7.0 4.0 V V pF dB UNITS nA pA TEST CON DITIONS Vee = 32 V, IE Vce = 32 V, IE TJ = 100C Ic
=0 = 0,
hFE VeEIONI VCEIsatl Cc NF
DC Current Gain (Note 5) Base to Emitter Voltage Collector to Emitter Saturation Voltage Collector Capacitance Noise Figure
= 2.0 mA, VCE = 5.0 V Ic = 2.0 rnA, VCE = 5.0 V Ic = 10 rnA, Ie = 0.5 mA
Vce
= 10 V,
IE
=0
Ic = 200 pA, VCE = 5.0 V, f = 1.0 kHz, BW = 200 Hz
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 3570 C/W (derating factor of 2.8 mWfOC). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 pS; duty cycle I' 1%. 6. For product family characteristic curves. refer to Curve Set T219. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-19
FAIRCHILD
A Schlumberger 'Company
BCF70
PN P Low Noise Transistor
hFE ... 215-500 @ 10 mA VCEO ... -45 V (Min) NF ... 4.0 dB (Max)
PACKAGES BCF70
TO-236AAIAB

Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 2So C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VCES Collector to Emitter Voltage VEBO Emitter to Base Voltage Ic Collector Current ICM Collector Current
-SSO C to 1S0 C 1S0C
0.350 W'
-4SV -SO V -SO V -S.OV 100 mA 200 mA

SYMBOL CHARACTERISTIC ICBo hFE VCElsatl VBE Cc NF Collector Cutoff Current DC Current Gain (Note S) Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Collector Capacitance Noise Figure -0.6 21S MIN MAX 100 10 UNITS nA pA V V pF dB TEST CONDITIONS VCB VCB
soo
-0.3 -o.7S 7.0 4.0
= -20 V, IE = 0 = -20 V, IE = 0, TJ = 100C Ic = 2.0 mA, VCE = -S.O V Ic = 10 mA, IB = O.S mA Ic = 2.0 mA, VCE = -S.O V VCB = -10 V, IE = 0 Ic = 200 J.LA, VCE = -S.O V, f = 1.0 kHz, B = 200 Hz
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 3570 C/W (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length; 300 ""; duty cycle; 1%. 6. For product family characteristic curves, refer to Curve Set T219. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-20
FAIRCHILD
BCF81
PNP Low Noise Transistor
hFE ... 420-800 @ 10 mA VCEO ... -45 V (Min) NF ... 4.0 dB (Max)
PACKAGES BCF81
TO-236AA/AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage Vceo Collector to Base Voltage VCES Collector to Emitter Voltage VEeo Emitter to Base Voltage Ic Collector Current ICM Collector Current
-55 to 150 C 150C
0.350 W'
-45 V
-50 V
-50 V
-5.0 V 100 rnA 200 rnA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Collector Cutoff Current ICBO hFE VCEfU VeE Cc NF DC Current Gain (Note 5) Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Collector Capacitance Noise Figure MIN MAX 100 10 420 800 -0.25 V V pF dB -0.7 4.0 4.0 UNITS nA p.A TEST CONDITIONS Vce Vce
-0.55
=0 = 0, TA = 100C Ic = 2.0 rnA, Vee = -5.0 V Ic = 10 rnA, Ie = 0.5 rnA Ic = 2.0 rnA, VeE = 5.0 V Vce = -10 V, IE = 0 Ic = 200 p.A, VCE = -5.0 V, f = 1.0 kHz, B = 200 Hz
IE IE
= -20 V, = -20 V,
NOTES: 1. These ra1ings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 3570 ClW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ""; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T155. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-21
FAIRCHILD
BCW29/BCW30
PNP General Purpose Transistor
Po ... 350 mW @ TA = 25C
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures -55 C to 150 C Storage Temperature 150C Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current (Continuous)
PACKAGE BCW29 BCW30
TO-236AAI AB TO-236AA/AB
0.350 W'
20V 30V 5.0V 100 mA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) BVCEO BVCES BVcBo BVEBO ICBO hFE VCECSall VBEIONI COb NF SYMBOL CHARACTERISTIC Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current DC Current Gain (BCW29) (Note 5) (BCW30) Collector to Emitter Output Capacitance Noise Figure
Satura~ion
MIN -20
MAX
UNITS V V V V
TEST CONDITIONS Ic Ic
= 2.0 mA,
IE
=0
Collector to Emitter Breakdown Voltage -30
-30
-5.0 100 10 120 215 260 500 -0.3 -0.6 -0.75 7.0 10
nA p,A
Voltage
V V pF dB
Base to Emitter "On" Voltage
= 100 pA., VEB = 0 = 10 pA., Ic = 0 IE = 10 pA., Ic = 0 VCB = -20 V,IE = 0 VCB = -20 V, IE = 0, TA = 100C Ic = 2.0 mA, VCE = -5.0 V Ic = 2.0 mA, VCE = -5.0 V Ic = 10 mA, IB = 0.5 mA Ic = 2.0 mA, VCE = -5.0 V VCE = -10 V, IE = 0, f = 1.0 MHz Ic = 0.2 mA, VCE = -5.0 V, f = 1.0 kHz, Rs = 2.0 kn, BW = 200 Hz
Ic
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-ta-ambient thermal resistance of 357 0 C/W (derating factor of 2.8 mwr C). 4. Rating refers to a high current point where collector to em itter voltage is lowest. 5. Pulse conditions: length = 300 !'8; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T219. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-22
F=AIRCHILD
A Sch!umberger Company
BCW321BCW33
General Purpose Transistor
Po ... 350 mW @ TA
= 25C

Temperatures
PACKAGE BCW32 BCW33
TO-236AAlAB TO-236AAI AB
Storage Temperature Operating Junction Temperature

Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature
-55 C to 150 C 150 C
0.350 W*
Voltages 8. Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current (Continuous)
20V 30V 5.0V 100 mA
MIN 20 30 5.0 200 420 0.55 450 800 0.25 0.70 4.0 10 V V pF dB MAX UNITS V V V TEST CONDITIONS Ic Ic
SYMBOL CHARACTERISTIC Collector to Emitter Breakdown BVCEO Voltage BVcBo BVEBO hfE VCElsatl VBEIONI COb NF Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage DC Current Gain (BCW32) (Note 5) (BCW33) Collector to Emitter Saturation Voltage Base to Emitter "On" Voltage Output Capacitance Noise Figure
= 2.0 mA,
IB
=0
= 10 !lA, IB = 0 = 10 !lA, Ic = 0 Ic = 2.0 mA, VCE = 5.0 V Ic = 2.0 mA, VCE = 5.0 V Ic = 10 mA, IB = 0.5 mA Ic = 2.0 mA, VCE = 5.0 V VCB = 10 V, IE = 0, f = 1.0 MHz Ic = 0.2 mA, VCE = 5.0 V, f = 1.0 kHz, Rs = 2.0 kn, BW = 200 Hz
IE
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 357' C/W (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where coliector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ,.s; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T155. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-23
F=AIRCHILD
BCW60A
NPN General Purpose Transistor
Po ... 350 mW@TA= 25C
PACKAGE BCW60A
TO-236AA/AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55 C to 150 C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current (Continuous)
0.350 W'
32V 32 V 5.0V 100 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Collector to Emitter Breakdown BVeEo Voltage BVEBo leEs lEBO hFE Emitter to Base Breakdown Voltage Collector Reverse Current Emitter Cuttoff Current DC Current Gain (Note 5) 120 MIN 32 5.0 20 20 20 220 250 0.55 0.35 V V MAX UNITS V V nA p.A nA TEST CONDITIONS Ic = 2.0 mA, IE = 0 IE = 1.0 p.A, Ic = 0 VeE = 32 V Vee = 32 V, TA = 150C VEB= 4.0 V, Ie = 0 Ie = 2.0 mA, VeE = 5.0 V Ie = 50 mA, VCE = 1.0 V Ie = 2.0 mA, VeE = 5.0 V, f = 1.0 kHz Ie = 50 mA, IB = 1.25 mA Ie = 10 mA, IB = 0.25 mA
60
125 VCElsatl Collector to Emitter Saturation Voltage (Note 5)
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 357" C/W (derating factor of 2.8 mWI" C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 /lS; duty cycle = 1%. 6. For product family characteristic curves. refer to Curve Set T144. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-24
BCW60A

VeE(saU SYMBOL CHARACTERISTIC Base to Emitter Saturation Voltage (Note 5) VeE(ONI Cob Base to Emitter "On" Voltage Output Capacitance Current Gain Bandwidth Product Turn 0)1 Time Turn 011 Time Noise Figure MIN 0.7 0.6 0.55 MAX 1.05 0.85 0.75 4.5 125 150 800 6.0 UNITS V V V pF MHz ns ns dB TEST CONDITIONS
fr
ton tOil NF
= 50 mA, Ie = 1.25 mA = 50 mA, Ie = 0.25 mA Ie = 2.0 mA, VeE = 5.0 V VeE = 10 V, 1 = 1.0 MHz Ie = 10 mA, VeE = 5.0 V, 1 = 1.0 MHz Ie = 10 mA, le1 = 1.0 mA le2 = 1.0 mA, Vee = 3.6 V, R1 = R2 = 5.0 n, RL = 990 n Ie = 0.2 mA, VeE = 5.0 V, 1 = 1.0 kHz, Rs = 2.0 kn, BW = 200 Hz
Ie Ie
3-25
FAIRCHILD
BCW61A
PACKAGE BCW61A
TO-236AAIAB
Temperatures Storage Temperature -55 C to 150 C Operating Junction Temperature 150 C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEao Emitter to Base Voltage Ic Collector Current (Continuous)
0.350 W*
32 V 32 V 5.0V 100 rnA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVCEO BVEao ICES hFE Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Reverse Current DC Current Gain 120 MIN -32 -5.0 20 20 220 250 -0.55 -0.25 V V V V V pF ns ns dB MAX UNITS V V nA Jl.A Ic IE TEST CONDITIONS
= 2.0 rnA,
IE
=0
VCE Vee
60
125 VCE(s.t) VaElsatl VaE(ONI COb ton tOil NF Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Base to Emitter "On" Voltage Output Capacitance Turn On Time Turn Off Time Noise Figure
-0.68 -1.05
-0.6 -0.6 -0.85 -0.75 6.0 150 800 6.0
= 10 pA, Ic = 0 = -32 V, VaE = 0 = -32 V, VaE = 0, TA = 150C Ic = 2.0 rnA, VCE = -5.0 V Ic = 50 rnA, VCE = -1.0 V Ic = 2.0 rnA, VCE = -5.0 V, f = 1.0 kHz Ic = 50 rnA, la = 1.25 rnA Ic = 10 rnA, Ie = 0.25 rnA Ic = 50 rnA, la = 1.25 rnA Ic = 10 rnA, la = 0.25 rnA Ic = 2.0 rnA, VCE = -5.0 V VCE = -10 V, Ic = 0, f = 1.0 MHz Ic = 10 rnA, la1 = 1.0 rnA le2 = 1.0 rnA, Vae = -3.6 V, R1 = R2 = 5.0 n, RL = 990 n Ic = 0.2 rnA, VCE = -5.0 V, f = 1.0 kHz, Rs = 2.0 kn, BW = 200 Hz
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum iunction temperature of ISO' C and junction-to-ambient thermal resistance of 357' ClW (derating factor of 2.8 mW/'C). 4. .Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 1'8: duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T215. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-26
FAIRCHILD
BCW65A
NPN Silicon General Purpose Transistor
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current (Continuous)
PACKAGE BCW65A
TO-236AA/AB
-55 C to 150 C 150C
0.350 W'
32 V 60 V 5.0 V 800 mA
MIN 32 60 5.0 20 20 20 35 75 100 35 220 250 2.0 12 80 100 100 400 10 V pF pF MHz ns ns dB MAX UNITS V V V nA nA Ic Ic IE TEST CONDITIONS
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVCEO BVcEs BVEBO lEBO ICES hFE CHARACTERISTIC Collector to Emitter Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Reverse Current DC Current Gain (Note 5)
= 10 mA,
IB
=0
J1.A
VBE(sati COb Cib
Base to Emitter Saturation Voltage Output Capacitance Input Capacitance Current Gain Bandwidth Product Turn On Time Turn Off Time Noise Figure
h
ton tOff NF
= 10 pA, VEB = 0 = 10 J1.A, Ic = 0 VEB = 4.0 V, Ic = 0 VCE = 32 V, IE = 0 VCE = 32 V, IE = 0, TA = 150C Ic = 100 pA, VCE = 10 V Ic = 10 mA, VCE = 1.0 V Ic = 100 mA, VCE = 1.0 V Ic = 500 mA, VCE = 2.0 V Ic = 500 mA, IB = 50 mA VCB = 10 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, Ic = 0, f = 1.0 MHz VCE = 10 V, Ic = 20 mA, f = 100 MHz IB1 = IB2 = 15 mA Ic = 150 mA, RL = 150 n Ic = 0.2 mA, VCE = 5.0 V, f = 1.0 kHz, Rs = 1.0 kn, BW = 200 Hz
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3. 4. 5. 6.
These ratings give a maximum junction temperature of 1500 C and junction-to-case thermal resistance of 1250 C/W (derating factor of 8.0 mWfO C); junction-to-ambient thermal resistance of 357 0 C/W (derating factor of 2.8 mW/o C). Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length = 300 jJS; duty cycle = 1%. For product family characteristic curves, refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-27
FAIRCHILD
BCW66F
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55 C to 150 C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current (Continuous)
PACKAGE BCW66F
TO-236AAI AB
0.350 W
45 V 75 V 5.0 V BOO mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVcEo BVCES BVEBO lEBo leEs hFE Collector to Emitter Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Reverse Current DC Current Gain (Note 5) 35 75 100 35 MIN 45 75 5.0 20 20 20 MAX UNITS V V V nA nA /lA TEST CONDITIONS Ic = 10 mA, IB = 0 Ic = 10 pA, VEB = 0 IE = 10 pA, Ic = 0 VEB = 4.0 V, Ic = 0 VeE = 45 V, Ie = 0 Vee = 45 V, Ie = 0, TA = 150C Ic Ic Ie Ic V pF pF MHz 100 400 10 ns ns dB
= 100 /lA, VeE = 10 V = 10 mA, VCE = 1.0 V = 100 mA, VCE = 1.0 V = 500 mA, VeE = 2.0 V
250 2.0 12 80
VBE's." COb C;b
Base to Emitter Saturation Voltage Output Capacitance Input Capacitance Current Gain Bandwidth Product Turn On Time Turn Off Time Noise Figure 100
Ie = 500 mA, IB = 50 mA VeB = 10 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, Ie = 0, f = 1.0 MHz VCE = 10 V, Ic = 20 mA, f = 100 MHz IB1 = IB2 = 15 mA Ie = 150 mA, RL = 150 n Ie = 0.2 mA, VeE = 5.0 V, f = 1.0 kHz, Rs = 1.0 kn, BW = 200 Hz
ton
toff NF
NOTES:
1. 2. 3. 4. 5. 6. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 357 0 C/W (derating factor of 2.8 mWr C). Rating refers to a high current pOint where collector to emitter voltage is lowest. Pulse conditions: length 0 300 ""; duty cycle" 1%. For product family characteristic curves. refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-28
FAIRCHIL.D
BCW69/BCW70
Po ... 350 mW @ TA
= 25C
PACKAGE BCW69 BCW70
TO-236AA/AB TO-236AA/AB
Temperatures
Storage Temperature Operating Junction Temperature -55 C to 150 C 150C
Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature Voltages & Currents (Note 4)
VCEO VESO Ic Collector to Emitter Voltage Emitter to Base Voltage Collector Current (Continuous)
0.350 W'
-45 V -5.0 V 100 mA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVCEO BVCES BVEso Icso hFE VCE(sat) VSE(ON) COb NF CHARACTERISTIC Collector to Emitter Breakdown Voltage MIN MAX UNITS V V V 100 10 120 215 -0.6 260 500 -0.3 -0.75 7.0 10 V V pF dB nA TEST CONDITIONS Ic = 2.0 mA, Is
-45
=0
Collector to Emitter Breakdown Voltage -50 Emitter to Base Breakdown Voltage Collector Cutoff Current DC Current Gain (BCW69) (Note 5) (BCW70) Collector to Emitter Saturation Voltage Base to Emitter "On" Voltage Output Capacitance Noise Figure -5.0
Ic = 100 p.A, VES IE
=0
100C
= 10 p.A,
Ic
p.A
Vcs = -20 V, IE Vcs = -20 V, IE
=0 =0 = 0, TA =
Ic = 2.0 mA, VCE = -5.0 V Ic = 2.0 mA, VCE = -5.0 V
= 10 mA, Is = 0.5 mA = 2.0 mA, VCE = -5.0 V Vcs = -10 V, IE = 0, f = 1.0 MHz Ic = 0.2mA, VCE = -5.0 V, f = 1.0 kHz, Rs = 20 n
Ic Ic BW = 200 Hz
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 3570 C/W (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length ~ 300 /lS; duty cycle ~ 1%. 6. For product family characteristic curves, refer to Curve Set T219. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-29
FAIRCHILO
BCW72
Po .,. 350mW@TA=25C
PACKAGE BCW72
TO-236AA/AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 0 C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Collector Current (Continuous) Ic
-55 C to 150 C 150 C
0.350 W*
45 V 50 V 5.0 V 100 mA
ELECTRICAL CHARACTERISTICS (25 0 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVcEo BVcEs BVcBo BVEBo ICBO hFE VCElsati VSEION) Cob NF CHARACTERISTIC Collector to Emitter Breakdown Voltage Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current DC Current Gain (Note 5) Collector to Emitter Saturation Voltage Base to Emitter "On" Voltage Output Capacitance Noise Figure 0.6 200 MIN MAX UNITS V V V V 100 10 450 0.25 0.75 4.0 10 V V pF dB nA p,A Ic TEST CONDITIONS
45
45 50 5.0
= 2.0 mA,
VEB
=0
Ie = 2.0 mA, VEB = 0
= 10 JJA, IE = 0 IE = 10 JJA, Ic = 0 VCB = 20 V, IE = 0 VCB = 20 V, IE = 0, TA = 100 C Ic = 2.0 mA, VCE = 5.0 V Ic = 10 mA, Is = 0.5 mA Ic = 2.0 mA, VCE = 5.0 V VeB = 10 V, IE = 0, f = 1.0 MHz Ic = 0.2 mA, VeE = 5.0 V, f = 1.0 kHz, Rs = 2.0 n BW = 200 Hz
Ic
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 357 0 C/W (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S, duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T155. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-30
BCW81
NPN Transistor
hFE ... 420-800 VCEO ... 45 V (Max) NF ... 10 dB (Max)
PACKAGE BCW81
TO-236AA/AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current ICM Collector Current
-55 C to 150 C 150 C
0.350 W'
MIN MAX 100 10 420 0.55 800 0.25 0.7 4.0 4.0 V V pF dB UNITS nA p.A TEST CONDITIONS VCB = 20 V, IE = 0 VCB = 20 V, IE = 0, TA = 100C Ic = 2.0 mA, VCE = 5.0 V Ic = 10 mA, IB = 0.5 mA Ic = 2.0 mA, VCE = 5.0 V VCB = 10 V, IE = 0 Ic = 200 p.A, VCE = -5.0 V, f = 1.0 kHz, B = 200 Hz
45 V 50 V 5.0V 100 mA 200 mA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL ICBo hFE VCEtsatl VBE Cc NF CHARACTERISTIC Collector Cutoff Current DC Current Gain (Note 5) Collector-to-Emitter Saturation Voltage Base-to-Emitter Voltage Collector Capacitance Noise Figure
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 357 0 C/W (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ~s: duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T155. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-31
FAIRCHILD
A Sehlumberger Company
BCX70G/BCX70H/BCX70J
PD ... 350 mW @ TA
= 25 C
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current (Continuous)
PACKAGE BCX70G BCX70H BCX70J
TO-236AA/AB TO-236AA/AB TO-236AA/AB
-55 C to 150 C 150C
0.350 W*
45 V 45V 5.0 V 100 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVCEO BVEBO lEBO ICES hFE CHARACTERISTIC Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain (Note 5) (BCX70H) (BCX70J) (BCX70G) (BCX70H) (BCX70J) (BCX70G) (BCX70H) (BCX70J) MIN 45 5.0 20 20 20 20 40 120 180 250 60 70 90 MAX UNITS V V nA nA Ic IE TEST CONDITIONS
= 2.0 mA,
IE
=0
J.LA
= 10 /lA, Ic = 0 VEB = 4.0 V, Ic = 0 VCE = 32 V VCE = 32 V, TA = 150C

Ie Ic Ic Ie Ie Ic Ic Ic
220 310 460
= 10 /lA, VCE = 5.0 V = 10 /lA, VCE = 5.0 V = 2.0 mA, VCE = 5.0 V = 2.0 mA, VeE = 5.0 V = 2.0 mA, VCE = 5.0 V = 50 mA, VCE = 1.0 V = 50 mA, VCE = 1.0 V = 50 mA, VCE = 1.0 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-ta-ambient thermal resistance of 357 0 C/W (derating factor-of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length ~ 300 IJS; duty cycle ~ 1%. 6. For product family characteristic curves, refer to Curve Set T144. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-32
BCX70G/BCX70H/BCX70J
ELECTRICAL CHARACTERISTICS (25 0 C Ambient Temperature unless otherwise noted) (Note 6)

SYMBOL CHARACTERISTIC VeEfsall V8EfONI
VBElsat)
MIN
MAX 0.35 0.55
UNITS V V V V V pF
TEST CONDITIONS Ie = 10 mA, 18 = 0.25 mA Ie = 50 mA, 18 = 1.25 mA Ie = 2.0 mA, VeE = 5.0 V Ie = 50 mA, 18 = 0.25 mA Ie = 50 mA, 18 = 1.25 mA VeE = 10 V, Ie = 0, f = 1.0 MHz Ie = 2.0 mA, VeE = 5.0 V, f= 1.0 MHz Ie = 2.0 mA, VeE = 5.0V, f= 1.0 MHz Ie = 2.0 mA, VeE = 5.0 V, f= 1.0 MHz
Collector to Emitter Saturation Voltage Base to Emitter "On" Voltage Base to Emitter Saturation Voltage Output Capacitance Small Signal Current Gain (BCX70H) (BCX70J) (BCX70G) 125 175 250 0.55 0.6 0.7
0.75 0.85 1.05 4.5 250 350 500 125 150 800 6.0
Cob hfe
h
ton tOff NF
Current Gain Bandwidth Product Turn On Time Turn Off Time Noise Figure
MHz ns ns dB
Ie = 10 mA, VeE = 5.0 mA, f=100MHz Ie = 10 mA, 181 = 1.0 mA 182 = 1.0 mA, V88 = 3.6 V, R1 = R2 = 5.0 kD, RL = 990 Ie = 0.2 mA, VeE = 5.0 V, f = 1.0 kHz, Rs = 2.0 kD, BW = 200 Hz
3-33
FAIRCHILD
BCX71 H/BCX71J/BCX71 K
Po ... 350 mW @ TA = 25C
PACKAGE BCX71H BCX71J BCX71K
TD-236AA/AB TO-236AAIAB TO-236AAIAB
Temperatures Storage Temperature -55 C to 150 C Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBo Emitter to Base Voltage Ic Collector Current (Continuous)
0.350 W'
-45 V
--45 V
-5.0 V 100 mA
BVCEO
SYMBOL CHARACTERISTIC Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current DC Current Gain (BCX71H) (BCX71J) (BCX71K) (BCX71H) (BCX71J) (BCX71K) (BCX71H) (BCX71J) (Note 5) ICES
MIN
MAX
-45
-5.0 20 20 30 40 100 180 250 380 80 100
UNITS V V nA p.A
Ic IE
= 2.0 rnA, = 1.0 pA,
TEST CONDITIONS 19 = 0 Ic
BVEBO
=0 = 150C
VCE = -32 V VCE = -32 V, TA
hFE
310 460 630
Ie = 10 pA, VeE = -5.0 V Ie = 10 p.A, VeE = -5.0 V Ie = 10 p.A, VeE = -5.0 V Ie = 2.0 rnA, VeE = -5.0 V Ie = 2.0 mA, VeE = -5.0 V Ie = 2.0 mA, VeE = -5.0 V Ie = 50 mA, VeE = -1.0 V Ie = 50 mA, VeE = -1.0 V
NOTES
1. 2. 3. 4. 5. 6.
These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. These are steady stale limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. These ratings give a maximum junction temperature of 1500C and junction-to-ambientthermal resistance of 3570CIW (derating factor of 2.8 mWIOC). Rating refers to a high current pOint where collector to emiller voltage is lowest. Pulse conditions: length I-' 300 /.lS: duty cycle = 1%. For product family characteristic curves. refer to Curve Sel T219. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-34
i
I
\1
BCX71 H/BCX71J/BCX71 K
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6)

SYMBOL CHARACTERISTIC (BCX71 K) (BCX71H) (BCX71J) (BCX71K)
VeElsatl
MIN 110 175 250 350
MAX 350 500 700 -0.25 -0.55
IUNITS
TEST CONDITIONS Ie = 50 mA, VeE = -1.0 V Ie = 2.0 mA, VeE = -5.0 V, f = 1.0 kHz Ie =2.0mA, VeE =-5.0V, f= 1.0 kHz Ie = 2.0 mA, VeE = -5.0 V, f = 1.0 kHz
I !
Collector to Emitter Saturation Voltage Base to Emitter "On" Voltage Base to Emitter Saturation Voltage Output Capacitance Turn On Time Turn Off Time Noise Figure -0.6
V V V V V pF ns ns dB
Ie = 10 mA, IB = 0.25 mA Ie = 50 mA, IB = 1.25 mA Ie = 2.0 mA, VeE = -5.0 V Ie = 10 mA, IB = 0.25 mA Ie = 50 mA, IB = 1.25 mA VeE = -10 V, Ie = 0, f = 1.0 MHz Ie = 10 mA, IB1 = 1.0 mA IB2 = 1.0 mA, VBB = -3.6 V, R1 = R2 = 5.0 kO, RL = 990 Ie = 0.2 mA, VeE = -5.0 V, f = 1.0 kHz, Rs = 2.0 kO, BW =200 Hz
VBEiONJ VBEisati Cob ton toff NF
-0.75
-0.6 -0.85 -0.68 -1.05 6.0 150 800 6.0
3-35
FAIRCHIL.D
BSR13/BSR14
NPN Switching Transistor
VCEO ... BSR13 30 V (Max), BSR14 40 V (Max) IT ... BSR13 250 MHz (Min), BSR14 300 MHz (Min)
. PACKAGE BSR13 BSR14
ABSOLUTE MAXIMUM RATINGS Temperatures Storage Temperature Operating Junction Temperature Power Dissipation Total Dissipation at 25 C Ambient Temperature Voltages & Currents VCEO Collector to Emitter Voltage VCBo Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
-55 C to 150 C 150C
0.350 W BSR13 30 V 60V 5.0V 800 mA BSR14 40 V 75 V 6.0 V 800 mA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC ICBo Collector Cutoff Current BSR13 MIN MAX 30 10 10 10 ICEX IBEX lEBO Collector Reverse Current Base Reverse Current Emitter Cutoff Current 30 10 20 15 BSR14 MIN MAX UNITS nA nA TEST CONDITIONS VCB = 50 V, IE VCB = 60 V, IE VCB = 50 V, IE TA = 150C VCB = 60 V, IE TA = 150C
= 0 = 0 = 0, = 0,
p.A
IJ.A nA nA nA
VCE = 60 V, VEB = 3.0 V VCE = 60 V, VEB = 3.0 V VEB = 3.0 V, Ic = 0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 Cand junction-te-ambient thermal resistance of 357 0 C/W (derating factor of 2.8 mW/ o C), 4. Rating refers to a high current point where collector to emilter voltage is lowest. 5. Pulse conditions: length = 300 pS: duty cycle = 1%. 6. For product family characteristic curves. refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-36
BSR13/BSR14

SYMBOL hFE CHARACTERISTIC DC Current Gain BSR13 MIN MAX 35 50 75 100 50 30 BSR14 MIN MAX 35 50 75 100 50 40 VeE(s.!) VeE(S.!) Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Collector Capacitance Current Gain Bandwidth Product Small Signal Current Gain Input Impedance Output Conductance Voltage Feedback Ration Turn On Delay Time Rise Time Storage Time Fall Time 250 400 1.6 1.3 0.6 2.6 8.0 300 50 75 2.0 0.25 5.0 25 300 375 8.0 1.25 35 200 8.0 4.0 10 25 225 60 k!1 k!1 J.Lmhos J.Lmhos X1Q-4 X1Q-4 ns ns ns ns 300 1.0 1.2 2.0 8.0 mV V V V V pF MHz UNITS Ie Ie Ie Ie Ie Ie Ie TEST CONDITIONS
300
300
Cc
h
h'e hie hoe h,e td t, ts t,
= 0.1 rnA, VeE = 10 V = 1.0 rnA, VeE = 10 V = 10 rnA, VeE = 10 V = 150 rnA, VeE = 10 V = 150 rnA, VeE = 10 V = 500 rnA, VeE = 10 V = 500 rnA, VeE = 10 V Ie = 150 rnA, Ie = 15 rnA Ie = 500 rnA, Ie = 50 rnA Ie = 150 rnA, Ie = 15 rnA Ie = 150 rnA, Ie = 15 rnA Ie = 500 rnA, Ie = 15 rnA Vee = 10 V, IE = 0 VeE = 20 rnA, Ie = 20 rnA = 1.0 rnA, VeE = 10 V = 10 rnA, VeE = 10 V Ie = 1.0 rnA, VeE = 10 V Ie = 10 rnA, VeE = 10 V Ie = 1.0 rnA, VeE = 10 V Ie = 10 rnA, VeE = 10 V Ie = 1.0 rnA, VeE = 10 V Ie = 10 rnA, VeE = 10 V Ie = 150 rnA Ie = 150 rnA Ie = 150 rnA Ie = 150 rnA
Ie Ie
3-37
FAIRCHILD
BSR1S/BSR16
PNP Switching Transistor
IT ...
VCEO .. BSR15 40 V (Max), BSR16 60 V (Max) > 200 MHz ton ... < 45 ns ton ... < 100 IJ.s
PACKAGE BSR15 BSR16
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
-55 C to 150 C 150C
0.350 W* BSR15 -40 V BSR16 -60 V -60 V -5.0 V 600 mA
-60 V -5.0 V 600 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL ICBo CHARACTERISTIC Collector Cutoff Current BSR15 MIN MAX 20 20 50 50 35 50 75 100 30 75 100 100 100 50 BSR16 MIN MAX 10 10 50 50 UNITS nA IJ.A nA nA TEST CONDITIONS VCB = -50 V, IE VCB = -50 V, IE TA = 150C VCE
=0 = 0,
ICEX IBEX hFE
Collector Cutoff Current Base Reverse Current DC Current Gain (Note 5)
300
300
= -30 V, VEB = 0.5 V VCE = -30 V, VEB = 3.0 V Ic = 0.1 mA, VCE = -10 V Ic = 1.0 mA, VeE = -10 V Ic = 10 mA, VeE = -10 V Ie = 150 mA, VeE = -10 V Ie = 500 mA, VeE = -10 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 357 0 C/W (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 "s; duty cycle" 1%. 6. For product family characteristic curves, refer to Curve Set T212. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-38
BSR15/BSR16

SYMBOL CHARACTERISTIC VeE(Sat) Collector to Emitter Saturation Voltage (Note 5) VSE(sat) Cc Ce Base to Emitter Saturation Voltage (Note 5) Collector Capacitance Emitter Capacitance Current Gain Bandwidth Product Turn On Delay Time Rise Time Storage Time Fall Time Turn On Time Turn Off Time 200 10 40 80 30 45 100 10 40 80 30 45 100 BSR15 MIN MAX -0.4 -1.6 -1.3 -2.6 8.0 30 BSR16 MIN MAX -0.4 -1.6 -1.3 -2.6 8.0 30 UNITS V V V V pF pF MHz ns ns ns ns ns ns TEST CONDITIONS Ie = 150 mA, Is = 15 mA Ie = 500 mA, Is = 50 mA Ie = 150 mA, Is = 15 mA Ie = 500 mA, Is = 50 mA Ves = -10 mA, IE = Ie = 0 VES = -2.0 V, Ie = 0 VeE = 20 mA, Ie = 50 mA, TA = 25C
h
td t, ts
tt
Ie = 150 mA, Is = 15 mA Ie = 150 mA, Is = 15 mA

Ie = 150 mA, Is = 15 mA ISM = 15 mA Ie = 150 mA, Is = 15 mA IsM =15mA
ton
tott
Ie = 150 mA, Is = 15 mA
Ie = 150 mA, Is = 15 mA IBM = 15 mA
3-39
FAIRCHILD
BSR17
NPN Switching Transistor
VCEO ... 40 V (Max)
IT ... 250 MHz (Min)
PACKAGES BSR17
TO-236AA/AB
ABSOLUTE MAXIMUM RATINGS

Temperatures Storage Temperature Operating Junction Temperature Power Dissipation Total Dissipation at 25 C Ambient Temperature Voltages & Currents VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEeo Emitter to Base Voltage Ic Collector Current
-55 C to 150 C 150C
0.350 W'
40V 60 V 6.0 V 200 mA

SYMBOL CHARACTERISTIC Iceo IcEx lex hFE Collector Cutoff Current Collector Cutoff Current Base Current DC Current Gain 20 35 50 30 15 MIN MAX 5.0 50 50 UNITS TEST CONDITIONS
JJA
nA nA
150
VCElsati VeElsati
Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage 650
200 300 850 950
V V V V
= 50 V, IE = 0, TJ = 150C VCE = 30 V, VEe = 3.0 V VCE = 30 V, VEe = 3.0 V Ic = 0.1 mA, VCE = 1.0 V Ic = 1.0 mA, VCE = 1.0 V Ic = 10 mA, VCE = 1.0 V Ic = 50 mA, VCE = 1.0 V Ic = 100 mA, VCE = 1.0 V Ic = 10 mA, Ie = 1.0 mA Ie = 50 mA, Ie = 5.0 mA Ic = 10 mA, Ie = 1.0 mA Ic = 50 mA, Ie = 5.0 mA
Vce
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum iunction temperature of 1500 C and iunction-to-ambient thermal resistance of 357 0 ClW (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 pS; duty cycle = 1%. 6. For product family characteristic curves. refer to Curve Set T144. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-40
BSR17

SYMBOL CHARACTERISTIC Current Gain Bandwidth Product Small Signal Current Gain Input Impedance Output Conductance Turn On Delay Time Rise Time Storage Time Fall Time MIN 250 50 1.0 0.1 1.0 200 8.0 5.0 40 35 35 175 50 k!l k!l J.lmhos ns ns ns ns MAX UNITS MHz VeE TEST CONDITIONS
h
h'e h;e hoe td t, ts t,
= 20 mA, Ie = 10 mA Ie = 10 mA, VeE = 20 V, f = 1.0 kHz Ie = 10 mA, VeE = 20 V, f = 1.0 kHz Ie = 10 mA, VeE = 20 V, f = 1.0 kHz Ie = 10 mA, VeE = 20 V, f = 1.0 kHz Ie = 10 mA, Is = 1.0 mA, VES = 0.5 V Ie = 10 mA, Is = 1.0 mA, VES = 0.5 V Ie = 10 mA, Ison = -Isoft = 1.0 mA Ie = 10 mA, Ison = -Isoft = 1.0 mA
3-41
FAIRCHILD
BSS63
PNP High Voltage Transistor
Po ... 350 mW @ TA
= 25C
PACKAGE BSS63
TO-236AA/AB
Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature
-55 C to 150 C 150 C
0.350 W*
Voltages & Currents (Note 4) VeEo Collector to Emitter Voltage VeER Collector to Emitter Voltage RBE = 10 kl1 Ie Collector Current (Continuous)
-100 V -110 V 100 mA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVeEo BVeBo BVeER BVEBo lEBO leBo leER hFE VCE/saU VBE/satt CHARACTERISTIC Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current Collector Cutoff Current DC Current Gain (Note 5) Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Current Gain Bandwidth Product Case Capacitance 50 5.0 30 30 -250 -900 mV V MHz pF MIN -100 -110 -6.0 200 100 10 MAX UNITS V V V V nA nA IJ.A Ie Ie TEST CONDITIONS
= 100 IJ.A
Collector to Emitter Breakdown Voltage -110
h
Cc
= 10 ~ = 10 IJ.A. IE = O. RBE = 10 kl1 IE = 10 ~ VEB = -6.0 V. Ie = 0 VeB = -90 V. IE = 0 VeE = -110 V. RBE = 10 11 Ie = 10 mAo VCE = -1.0 V Ic = 25 mAo VeE = -1.0 V Ie = 25 mAo IB = 25 mA Ie = 25 mAo IB = 2.5 mA VCE = -5.0 V. Ie = 25 mAo f = 35 MHz IE = Ie = O. Vee = -10 V
Ie
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 357 0 C/W (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 1'5; duty cycle = 1%. 6 For product family characteristic curves, refer to Curve Set T232. Package mounted on 99.5% alumina 8 rtlm x 8 mm x 0.6 mm.
3-42
FAIRCHILO
BSS64
NPN Driver Transistor
Po ... 350 mW @ TA
= 25C
PACKAGE BSS64
TO-236AA/AB
-55 C to 150 C 150C
0.350 W*
80V 120 V 5.0V 100 mA
MIN 80 120 5.0 200 20 20 0.7 3.0 50 V V MHz MAX UNITS V V V nA TEST CONDITIONS Ic = 4.0 mA, IE = 0 Ic = 100 p.A IE = 100 p.A VEB = 4.0 V VCE = 80 V, TA = 70C le=10mA,VcE=1.0V Ie = 4.0 mA, IB = 400 p.A Ic = 50 mA, 18 = 15 mA Ic = 4.0 mA, VeE = 10 V, f = 35 MHz
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVcEo BVcBo BVEBo lEBO ICES hFE
VCElsat)
Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Current Gain Bandwidth Product
p.A
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. ,2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 357 0 ClW (derating factor of 2.8 mW;o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I"l: duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T149. Package mounted on 99.5% alumina 8 mrn x 8 mm x 0.6 mrn.
3-43
BSS79B/BSS79C
PACKAGE BSS79B BSS79C
-55 C to 150 C 150 C
0.350 W*
40 V 75 V 6.0 V 100 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVCEO BVcBo BVEBo lEBO ICBO hFE VeE!sat> COb CHARACTERISTIC Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain (BSS79B) (Note 5) (BSS79C) Collector to Emitter Saturation Voltage (Note 5) Output Capacitance Current Gain Bandwidth Product Turn On Delay Time Rise Time Storage Time Fall Time 250 10 10 225 60 40 100 MIN 40 75 6.0 10 10 10 120 300 0.3 1.0 8.0 V V pF MHz ns ns ns ns MAX UNITS V V V nA nA Ic Ic TEST CONDITIONS
= 2.0 mA
J.tA
h
td tr t. t,
= 10 J.tA = 10 J.tA VBE = 3.0 V VCB = 60 V VCB = 60 V, TA = 150C Ic = 150 mA, VCE = 10 V Ie = 150 mA, VCE = 10 V Ie = 150 mA, IB = 15 mA Ie = 500 mA, IB = 50 mA VCB = 10 V, f = 1.0 MHz VCE = 20 V, Ic = 20 mA, f = 100 MHz Ic = 150 mA, Vcc = 30 V, IB1 = IB2 = 15 mA Ic = 150 mA, Vcc = 30 V, IB1 = IB2 = 15 mA Ic = 150 mA, Vcc = 30 V, IB1 = IB2 = 15 mA Ic = 150 mA, Vee = 30 V, IB1 = IB2 = 15 mA
IE
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 35r C/W (derating factor of 2.8 mW/O C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 3001'8; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm .
3-44
FAIRCHILD
BSS80B/BSS80C
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures -55 C to 150 C Storage Temperature Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current (Continuous)
PACKAGE BSS80B BSS80C
TO-236AA/AB
TO-236AAI AB
0.350 W*
-40 V -60 V -5.0 V BOO rnA
I
MIN MAX UNITS V V V 10 10 10 nA nA p.A TEST CONDITIONS Ic = 10 rnA Ic = 10 p.A IE = 10 p.A VBE = -3.0 V VCB = -50 V VCB = -50 V, TA = 150 C Ic = 150 rnA, VCE = -10 V Ic = 150 rnA, VCE = -10 V V V pF MHz 10 40 80 30 ns ns ns ns Ic = 150 rnA, IB = 15 rnA Ic = 500 rnA, IB = 50 rnA VCB = -10 V, f = 1.0 MHz VCE = -20 V,lc = 50 rnA, f= 100 MHz Ic = 150 rnA, Vce = -30 V, IBI = IB2 = 15 rnA Ic = 150 rnA, Vcc = -30 V, IBI = IB2= 15 rnA Ic = 150 rnA, Vcc = -30 V, IBI = IB2 = 15 rnA Ic = 150 rnA, Vee = -30 V, IBI = IB2 = 15 rnA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVCEO BVcBo BVEBO lEBo ICBO hFE VCEfsatl Cob Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain (BSS80B) (Note 5) (BSS80C) Collector to Emitter Saturation Voltage (Note 5) Output Capacitance Current Gain Bandwidth Product Turn On Delay Time Rise Time Storage Time Fall Time 200
-40
-60
-5.0
40
100
120 300 -0.4 -1.6 8.0
h
td
t,
ts tf
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 357" C/W (derating factor of 2.8 mWr C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length ~ 300 pS; duty cycle ~ 1%. 6. For product family characteristic curves. refer to Curve Set T212. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-45
FAIRCHIL.O
BSV52
NPN Silicon Switching Transistor
Po ... 350 mW@ TA
= 25C
PACKAGE BSV52
TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEeo Emitter to Base Voltage Ie Collector Current (Continuous)
-55 C to 150 C 150 C
0.350 W*
12 V 20 V 20 V 200 rnA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVCEO Iceo hFE Collector to Emitter Breakdown Voltage Collector Cutoff Current DC Current Gain 25 40 25 MIN 12 100 5.0 120 300 250 400 700 850 1200 4.0 4.5 400 13 12 18 mV mV mV mV mV pF pF MHz ns ns ns MAX UNITS V nA Ic TEST CONDITIONS
= 1.0 rnA, = 10 V, = 10 V,
Ie IE IE
=0
p.A
Vce Vce
VCElsat)
Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage Output Capacitance Input Capacitance Current Gain Bandwidth Product Storage Time (test circuit no. 239) Turn On Time Turn Off Time
VeEI,all COb Cib
h
ts ton toft
=0 = 0, TA = 125C Ic = 1.0 rnA, VCE = 1.0 V Ic = 10 rnA, VCE = 1.0 V Ic = 50 rnA, VCE = 1.0 V Ic = 10 rnA, Ie = 300 /lA Ic = 10 rnA, Ie = 1.0 rnA Ic = 50 rnA, Ie = 5.0 rnA Ic = 10 rnA, Ie = 1.0 rnA Ic = 50 rnA, Is = 5.0 rnA Vce = 5.0 V, IE = 0, f = 1.0 MHz VEe = 1.0 V, Ic = 0 VCE = 10 V, Ic = 10 rnA Ic = 10 rnA, Ie = leM = 10 rnA Ic = 10 rnA, VeE = 1.5 V, Ie = 3.0 rnA Ic = 10 rnA, Ie = 3.0 rnA
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150' C and junction-to-ambient thermal resistance of 357' C/W (derating factor of 2.8 mWI' CI. 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 /.Is: duty cycle = 1%. 6. For product family characteristic curves. refer to Curve Set T132. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-46
F=AIRCHILD
BSX39
NPN Silicon Switching Transistor
Po ... 350 mW@TA
= 25C
PACKAGE BSX39
TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperatu re -55 C to 150 C Operating Junction Temperature 150 C Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature Voltages & Currents (Note 4) VeEo Collector to Emitter Voltage Ie Collector Current (Continuous)
0.350 W'
14 V 200 rnA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVCEO Collector to Emitter Breakdown Voltage Icao IcES hFE Collector Cutoff Current Collector Cutoff Current DC Current Gain (Note 5) 25 40 25 MIN 14 MAX UNITS V nA nA p.A TEST CONDITIONS Ic = 2.0 rnA, la = 0 Vca = 12 V, IE = 0 VCE = 12 V, IE = 0 VCE = 12 V, IE = 0, TA = 125C Ic = 1.0 rnA, VeE = 1.0 V Ic = 10 rnA, VCE = 1.0 V Ic =50 rnA, VCE = 1.0 V mV mV V V ns ns Ic = 10 rnA, la = 1.0 rnA Ic = 50 rnA, la = 5.0 rnA Ic = 10 rnA, la = 1.0 rnA Ic = 50 rnA, la = 5.0 rnA Ic = 10 rnA, la = 3.0 rnA Ic = 10 rnA, la1 = la2 = 3.0 rnA
100 100 5.0 200 250 400 0.7 0.85 1.2 12 18
VCElsatJ VaElsatJ
Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Turn On Time Turn Off Time
ton
toll
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 357 0 ClW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 1'8; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T132. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-47
FAIRCHILD
FA Series
Matched Pai rand Quad Assemblies Diodes
The FA Series are individual glass diodes featuring very tightly matched characteristics over broad temperature and current ranges .
Il.VF ... Down to 3 mV (MAX) Il.IR ... Down to 10 nA (MAX)
PACKAGE All Devices
00-7
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junclion Operating Temperature Lead Temperalure Power Dissipation (Note 2) Maximum Total Power Dissipalion at 25C Ambient Each Diode linear Power Derating factor (from 25 C) Each Diode -65C to +200C +175C +260C
250mW
1.67 mW/C
Maximum Voltage and Currents Basic Diode (See SpeCification below) FD1389 FD2389 FD3389 FD6389 WIV Working Inverse Voltage 125 V 50 V 75 V 150 V Average Rectified Current 100mA 100mA 150mA 200mA 10 Continuous Forward Current 150 mA 150mA 225 mA 300mA IF Recurrent Peak Forward Current 300mA 300mA 450mA 600mA if if(surge) Peak Forward Surge Current Pulse width 1.0 s 1.0 A 1.0 A 1.0 A 1.0 A Pulse width = 1.0 /LS 4.0A 4.0 A 4.0A 4.0 A
MATCHING CHARACTERISTICS (Apply over temperature range of -55C to +100C) Basic Diode (See Spec ification below) FD1369 FD1369 FD1389 FD1389
NOTES.
1. Thel. are Limiting valu above which IIf. or letiafactory performance may be impaired 2. Thea. ar. steady Itat.limits. The factory should be conaultad on applications involving pulled or low dutycycle operation. 3. The Rever Current ~.tch WR) il the difference jn rever.e current between th~ diode' having "the highest IR and that having the lowest IR in 8 given assembly. The reverse voltage (VR) In the .&IR calculation can be any value up to 125 V. For example. the maximum aiR for an FA2330lUat VR of 10 V is (2.0 + 0.064 x 10) nA or 2.84 nA. 4. The Forward Current Matching Rang between 10 p.A and 10 mA may ~e applied either as a dc current Or a pulae current. Above 10 mA, however. the matching characteristics .re guaranteed only for low duty cycle (.:S1%) pulse current. Conditions of teat are ahown in the characteriatic curve and test circuit section of this book 6. For product family characterlatici curvea tor the baaic diad uaed "In the asaembUes, refer to the following parts of Section 4.
Forward Current Matching Range (Notes 4 & 6) 10/LA to 1.0 rnA 10 /LA to 1.0 rnA 1.0 rnA to 10 mA 1.0 rnA to 10 rnA
Reverse Current Match (1l.1R Maximum) (Note 3)
Forward Voltage Match (Il.VF Maximum) 3.0mV 10mV 5.0 mV 15mV
Assembly Type Number
Pair FA2310U FA2311U FA2312U FA2313U
Quad FA4310U FA4311U FA4312U FA4313U
F0138904 F02389 01 F03389 02' FDtl389 04

For teat circuita, refer to Chapter 4.018.
3-48
FA Series
Matched Pair and Quad Assemblies Diodes
MATCHING CHARACTERISTICS (Apply over temperature range of -55C to +100C)
Basic Diode (See Specification below) FD2369 FD2369 FD2389 FD2389 FD2389 FD2389 FD3389 FD3369 FD3389 FD3369 FD3369 FD3389 FD6389 FD6369
Forward Current Matching Rsnge (Notes 4 & 6) 10,.A to 1.0 mA 10,.A to 1.0 mA 1.0 mA to 10 mA 1.0 mA to 10 mA 10 mA to 100 mA 10 mA to 100 mA 10,.A to 1.0 mA 1.0 mA to 10 mA 10 mA to 100 mA 10,.A to 1.0 mA 1.0 mA to 10 mA 10 mA to 100 mA 10 mA to 100 mA 10 mA to 100 mA
Reverse Current Match (AIR Maximum) (Note 3)
Forward Voltage Match (AVF Maximum)
Assembly Type Number
Pair 3.0mV 10mV 5.0mV 15mV 10mV 20 mV FA2320U FA4321U FA2322U FA2323U FA2324U FA2325U FA2330U FA2331U FA2332U FA2333U FA2334U FA2335U FA2360U FA2361U
Quad FA4320U FA4321U FA4322U FA4323U FA4324U FA4325U FA4330U FA4331U FA4332U FA4333U FA4334U FA4335U FA4360U FA4361U
(2.0 (2.0 (2.0 (4.0 (4.0 (4.0
+ + + + + +
0.064 0.064 0.064 0.126 0.128 0.128
VR) VR) VR) VR) VR) VR)
nA nA nA nA nA nA
10 mV 15 mV 20 mV 10mV 15mV 20mV 10mV 20 mV
BASIC DIODE ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted)
FD1389 SYMBOL BV IR VF CHARACTERISTIC Breakdown Voltage Reverse Current Forwsrd Voltsge MIN 100 MAX
FD2389 MIN 200 MAX
FD3389 MIN 150 MAX
FD6389 MIN 75 MAX UNITS V V 100 100 1.000 0.920 0.860 0.790 0.750 0.710 0.670 0.630 3.0 nA ,.A V V V V V V V V pF ns TEST CONDITIONS IR = 5.0,.A IR = 100,.A VR = WIV VR = WIV, TA = 150C IF = 200 mA IF = 100 mA IF=50mA IF=20mA IF = 10 mA IF -.5.0 mA IF = 2.0 mA IF = 1.0 mA VR = 0, f = 1 MHz If = Ir = 10 mA Recover to 1.0 mA If = Ir = 30mA Recover to 1.0 mA li=lr =200mA Recover to 20 mA
100 100
100 100 1.000 0.925 0.860 0.790 0.740 0.700 0.620 0.810 5.0
1.0 3.0 1.000 0.930 0.880 0.840 0.810 0.770 0.730 0.710 6.0
1.000 0.875 0.800 0.725 0.670 C Irr Cspacitance (Note 5) Reverse Recovery Time 2.0 4.0
50 4.0
ns ns
3-49
FAIRCHILD
FAS02618/FAS02718
!J.VF ... 5 mV (Max) @ 5 mA
Connection Diagram
ABSOLUTE MAXIMUM RATINGS (Notes 1 & 5)

4 3 2 1
Temperatures
Storage Temperatu re -55 C to 150 C Operating Junction Temperature 150 C

Power Dissipation (Note 2)
ffff
5 6 7 B
Total Dissipation per Junction at 25C Ambient per Package at 25 C Ambient Linear Derating Factor Junction Package
Voltages & Currents WIV Working Inverse Voltage FASA2618 FASA2718 IF Continuous Forward Current Peak Forward Surge Current if Pulse Width = 1.0 s Pulse Width = 1.0 P.s
300 mW' 1.0W

2.4 mW/oC 8.0 mW/oC
PACKAGE
FAS02618 FAS02718
8-S01C 8-S01C
75 V 50 V 250 mA 1.0 A 2.0A
SYMBOL CHARACTERISTIC Breakdown Voltage (Note 5) Bv (FAS02718) (FAS02618) IR Reverse Current (FAS02718) VF trr Forward Voltage (Note 3) Reverse Recovery Time (Note 6) (FAS02618) (FAS02718) (FAS02618)
MIN 75 100
MAX
UNITS V V
TEST CONDITIONS IR = 5.0 p.A IR = 100 p.A VR = 75 VR = 20 VR = 20 VR = 50 VR = 50 IF V V V, TA V V, TA
5.0 25 50 100 100 1.0 5.0 6.0
p.A nA p.A nA p.A
= 150C = 150C
I" = 1.0 rnA I" = 1.0 rnA
V ns ns
= 10 mA = 10 rnA,
= 10 mA,
h = I, II =- I,
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving putsed or low duty cycle operations. 3. V, is measured using an 8 ms pulse. 4. See test circuits (Note 6) for measurement of reverse current of an individual diode. 5. For product family characteristic curves, refer to Curve Set 0-15. Package mounted on 99.5 alumina 12 mm x 18 mm 0.6 mm.
FAS02618/FAS02718
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 5) SYMBOL CHARACTERISTIC Capacitance (Note 6) C (FAS02718) !).VF tlr VFM RE Iso MIN (FAS02618) MAX 4.0 2.0 5.0 20 3.0 45 50 UNITS pF pF mV ns V TEST CONDITIONS VA VA
Forward Voltage Match (Note 6) Forward Recovery Time (Note 6) (FAS02618) Peak Forward Voltage (Note 6) (FAS02618) Rectification Efficiency Isolation Current
=0 =0 IF = 5.0 mA = 100 mA,
50 mA Peak Square wave, 0.1 JJ.S Pulse Width, 5.0 kHz-100 kHz IF VI tr:r;;; 10 ns
%
nA
= 2.0 V rms, f = 100 MHz VA = 50 V
3-51
FAIRCHILD
FDH300/FDLL300 FDH333/FDLL333
High Conductance Low Leakage Diodes
BV ... 150 V (MIN) 0100,.A IR ... 1.0 nA (MAX) 0125 V (FDH300), 3.0 nA (MAX) 0125 V (FDH333) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperature. Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power DI88lpatlon (Note 2) Maximum Total Dissipation at 25C Ambient Linear Derating Factor (from 25C) Maximum Voltage. and Current. WIV Working Inverse Voltage 10 Average Rectified Current IF Forward Current Steady State if Recurrent Peak Forward Current if(surge) Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0!,s -65C to +200C +175C +260C
PACKAGES
FDH300 FDH333 FDLL300 FDLL333
DO-35 DO-35 LL-34 LL-34
500mW
If you need this device in the SOT package, an electical equivalent is available. See FDS01500 family.
3.33 mW,C
125 V 200mA 500mA 600mA 1.0 A 4.0A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) FDH300 SYMBOL VF CHARACTERISTIC Forward Voltage 1.0 0.92 0.88 0.8 0.75 0.68 IR Reverse Current 1.0 3.0 6.0 150 150 MIN MAX FDH333 MIN 0.9 0.S8 0.87 0.86 0.83 0.80 MAX 1.15 1.08 1.05 0.97 0.94 0.89 UNITS V V V V V V V V V nA ,.A nA pF V TEST CONDITIONS IF = 300 rnA IF = 250 rnA IF = 200 rnA IF =150 rnA IF = 100 rnA IF=50mA IF = lOrnA IF = 5.0 rnA IF 1.0 rnA VR VR VR
3.0 500
C
BV
NOTES:
Capacitance Breakdown Voltage
6.0
= = 125 V = 125 V. TA = 150C = 125 V, TA = l00C VR = 0, f = lMHz IR = l00,.A
1. The maximum ratingl .relimlting valu above which life or letia'actory performance may be impaired. 2. The ar. steady .tate limit . The factory should be consulted on applications Involving pul.ed or low duty cycle operations. 3. For family characterlatlc curve., rafer to Chapter 4, 02.
3-52
FAIRCHILD
High Voltage General Purpose Diodes
BV ... 200 V (MIN) FDH400 ... 150 V (MIN) FDH444 VF ... 1.1 V (MAX) @ 300 mA FDH400 @ 200 mA FDH444 ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Max Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25C Ambient Linear Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage 10 Average Rectified Current Forward Current Steady State IF if Recurrent Peak Forward Current if(surge) Peak Forward Surge Current Pulse width = 1.0 s Pulse width 1.0 p.s FDH400 175 V 200 mA 500mA 600mA
1.0 A 4.0 A
PACKAGES
FDH400 FDH444 ' FDLL400 FDLL444
DO-35 DO-35 LL-34 LL-34
-65C to +200C +175C +260C
500mW
3.33 mW/C
FDH444 125 V 200 mA 500mA 600mA
1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF BV IR FDH400 CHARACTERISTIC Forward Voltage Breskdown Voltage Reverse Current 200 100 50 100 100 C Irr
NOTES:
FDH444 MIN MAX 1.2 1.1 150 UNITS V V V nA nA /loA /loA pF ns TEST CONDITIONS IF = 300 mA IF = 200 mA IR=loop.A VR VR VR VR VR = 150 V = 100V = 150 V, TA = 150C = 100 V, TA = 150C
MIN
MAX 1.1 1.0
Capacitance Revarse Recovery Time
2.0 50
2.5 60
If 30 mAo Ir = 30 mA RL = 1000, Irr = 3.0 rnA
= 0, f = 1.0 MHz =
1. 2. 3.
The ma"imum fatings are limiting value. above which lif. or satisfactory performance may be impaired. Thea. are steady atate limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. For product family characteristic curve., refer to Chapter 4, 01 .
3-53
FAIRCHILD
Ultra Fast Diodes
C ... 2.5 pF (MAX)FDH600, 3.5 pF (MAX) FDH666 VF ... 1.0 V (MAX) ~ 100 inA (FDH666) ... 1.0 V (MAX) @ 200 rnA (FDH600) I rr .4.0 ns (MAX)@ I; = Ir = 10 mA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperature. Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25C Ambient Linear Derating Factor (from 25C) Maximum Voltage and Current. WIV Working Inverse Voltage 10 Average Rectified Current IF Continuous Forward Current if Recurrent Peak Forward Current Peak Forward Surge Current if(surge) Pulse Width = 1.0 s Pulse Width = 1.0 /LS FDH 600 50 V 200mA 500mA 600 mA 1.0 A 4.0 A -65C to +200C +175C +260C
PACKAGES
FOH600 FOH666 FOLL600 FOLL666
00-35 00-35 LL-34 LL-34
If you need this device in the SOT package, an electical equivalent is available. See FOS01200 family.
500mW
3.33 mW/oC
FDH 666 25 V 200 mA 500mA 600 mA 1.0 A 4.0A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) FDH600 SYMBOL VF CHARACTERISTIC Forward Voltage MIN MAX 1.0 0.92 0.86 0.79 0.65 0.1 0.1 100 100 BV Irr C
NOTES.
1. 2. 3. .... The maximum ratinge are limiting valuel above which life or satisfactory performance may be impaired. The ar. a.eady atate limits. The factory should be consulted on applications involving pulled or low duty-cycle operation. Recovery to 0.1 IRFor product family characteristic curve,. ret.r to Chapter 4, 04.
FDH666 MIN MAX 1.0 0.86 0.79 0.65 UNITS V V V V V IlA IlA IlA IlA V 4.0 6.0 3.5 ns nil pF TEST CONDITIONS IF = 200 rnA IF = 100 rnA IF=50mA IF = 10 rnA IF = 1.0 rnA VR = 50 V VR = 25 V VR = 50 V, TA = 150C VR = 25 V, TA = 150C IR = 5.0 IlA I, = Ir I, = Ir
IR
Reverse Current
Breakdown Voltage Reverse Recovery Time (Note 3) Capacitance
75 4.0 6.0 2.5
40
= 10 rnA, RL = 1000 = 200 rnA, RL = 1000 VR = 0, , = 1.0 MHz
3-54
FAIRCHILD
FD700/FDLL700 FD777IFDLL777
Ultra Fast Diodes
C ... 1.0 pF (MAX) @ VR 0, f 1.0 MHz (FD 700) trr ... 700 ps (MAX) @ If = Ir = 10 mA, RL = 100 f! (FD 700) CONTROLLED FORWARD CONDUCTANCE ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures FD700 FD777 Storage Temperature Range -65C to +200C -65C to +200C Max Junction Operating Temperature +175C +175C Lead Temperature +260C +260C Power Dissipation Maximum Total Dissipation at 25C Ambient 250mW 250 mW Linear Derating Factor (from 25C) 1.67 mW/oC 1.67 mW / C Maximum Voltages and Currents WIV Working Inverse Voltage 20 V 8.0 V 10 Average Rectified Current 50 mA 50mA IF Forward Current Steady State dc 150 mA 150 mA if Recurrent Peak Forward Current 150 mA 150 mA if (surge) Peak Forward Surge Current Pulse Width = 1.0 s 250 mA 250 mA
PACKAGES FD700 FD777 FDLL700 FDLL777
00-7 00-7
LL-34 LL-34
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) FD700 SYMBOL VF CHARACTERISTIC Forward Voltage MIN 0.89 0.81 0.76 0.64 0.52 0.42 30 50 100 50 50
T
FD777 MIN 0.89 0.81 0.76 0.64 0.52 0.42 15 MAX 1.35 1.00 0.94 0.79 0.64 0.53 UNITS V V V V V V V nA nA p.A p.A . ps ps pF TEST CONDITIONS IF IF IF IF IF IF
MAX 1.10 0.95 0.88 0.74 0.61 0.50
BV IR
Breakdown Voltage Reverse Current
= 50 mA = 20 mA = 10 mA = 1.0 mA = 0.1 mA = 0.01 mA IR = 5.0 p.A VR = 20 V VR = 8.0 V VR = 20 V, TA = 150C VR = 8.0 V, TA = 150C

(see Note 2) If
Minority Carrier Lifetime Reverse Recovery Time (Note 3) Capacitance
450 700 1.0
450 750 1.3
trr C
NOTES.
VR
= Ir = 10 mA, RL = 100 f! = 0, f = 1.0 MHz
1. 2. 3. 4.
The maximum ratings are limiting values above which lite or satisfactory performance may be impaired. Measured as suggested by S. M. Krakeuef, IRE Proceedings, Volume 60, July 1962, pp. 1674 1675. Recovery to 0.1 lAFor product family characteristic curves, refer to Chapte, 4, 03.
3-55
FAIRCHILD
High Speed Switching Diodes
BV .. . 45V (FDA900), 35 V (FDH999) I rr ... 4.0 ne (FDH900), 5.0 ne (FDH999) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Max. Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25C Ambient Linear Derating Factor (From 25C) Maximum Voltage and Currents WIV Working Inverse Voltage 10 -65C to +200C +175C +260C
PACKAGES
FOH900 FOH999 . FOLL900 . FOLL999
00-35 00-35
LL-34 LL-34
500mW 3.3 mW/oC.
FDH900 FDH999
IF
if if(surge)
Average Rectified Current Continuous Forward Current Recurrent Peak Forward Current Peak Forward Surge Current Pulse Width == 1.0 s Pulse Width == 1.0 p's
40 V 25 V 200mA 500mA 600 mA 1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) FDH900 SYMBOL BV IR VF C trr
NOTES.
FDH999 MIN 35 1.0 MAX UNITS V /loA nA V V pF ns TEST CONDITIONS IR
CHARACTERISTIC Breakdown Voltage Reverse Current
MIN 45
MAX
= 5.0 /loA
500 Forward Voltage 1.0 Capacitance Reverse Recovery Time 3.0 4.0 5.0 5.0 1.0
VR == 25 V VR = 40 V
= 10 rnA = 100 rnA VR = 0, f = 1.0 MHz If == 10 rnA, Ir = 10 rnA, f'L = 100 0, Irr = 1.0 rnA
IF IF
1. Thea. ratings are limiting values above which the lerviceability of any individual semiconductor device may be impaired. 2. Theae are steady atate limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. For product family characteriatic curve., refer to Chapter 4, 04.
3-56
FAIRCHILD
FDH1000/FDLL 1000
High Conductance Switching Diodes
VF ... 1 V (max) @ 500 mA OS ... 100 pC (max)
PACKAGES
FOH1000 FDLL1000
00-35
LL-34
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient linear Power Derating Factor Maximum Voltage and Currents WIV Working Inverse Voltage 10 Average Rectified Current IF Continuous Forward Current if Peak Repetitive Forward Current Peak Forward Surge Current if(surge) Pulse Width = 1 s Pulse Width = 1 itS -65C to +200C +175C +260C
500 mW
3.33 mW/oC
50 V 200 rnA 500 rnA 600 rnA 1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VI IR
CHARACTERISTIC Forward Voltage Reverse Current
MIN
MAX 1.0 5.0 50 50
UNITS V p.A nA p.A V
TEST CONDITIONS
BV C
Breakdown Voltage Capacitance Stored Charge
75 5.0 100
pF pC
as
= 500 rnA = 50 V = 20 V = 20 V, TA = 125C IR = 100 p.A VR = O. I = 1.0 MHz If = 10 rnA, VR = 10 V

IF VR VR VR
NOTES; 1. Maximum fatinge .,elimiting values above which life or satisfactory performance may be impaired. 2. The.e are steady atat.limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. For family characteristic curves, refer to Chapter 4, 04.
3-57
F=AIRCHILO'
FDS01201 - 1205
Bv ... 200 V (Min) I, ... 1.0 ns (Max) @ 125 V
Connection Diagram
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Device Dissipation at TA = 25 C Voltages & Currents (Note 4) W,v Working Inverse Voltage 10 Average Rectified Current If DC Forward Current it Recurrent Peak Forward Current 1201
1202 0.350 mW
150 V 200 rnA 300 rnA 400 rnA
n
1
3
1203
2
G
1
1204
2
1205 PACKAGE FDS01201 FDS01202 FDS01203 FDS01204 FDS01205
TO-236AA/AB
TO-236AAI AB TO-236AAI AB TO-236AAI AB TO-236AAI AB
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 5) SYMBOL CHARACTERISTIC Bv IR Breakdown Voltage Reverse Current MIN 100 25 50 5.0 0.55 0.66 0.82 0.87 0.60 0.74 0.92 1.0 1.1 4.0 2.0 MAX UNITS V nA nA nA V V V V V ns pF TEST CONDITIONS IR = 100 /-IA VR = 20 V VR = 50 V VR = 50 V, TJ = 150C IF = 1.0 mA IF =10mA IF = 100 mA IF = 200 mA IF = 300 rnA IF = IR = 10 mA, RL = 100 fl, IRR = 1.0 mA VR = 0, f = 1.0 MHz
VF
Forward Voltage
t" C
Reverse Recovery Time Capacitance
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 Cand junction-to-ambient thermal resistance of 357 0 C/W (derating factor of 2.8 mW;o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. For product family characteristic curves, rafer to Curve Set 0-1.
3-58
FAIRCHILD
FDS01401 - 1405
High Voltage General Purpose Diode
Po ... 350 mW @ TA = 25 C Bv ... 200 V (Min) VF ... 1.1 V (Max)@ 300 mA
Connection Diagram
c:J
3
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Device Dissipation at TA = 25C Voltages & Currents W1V Working Inverse Voltage 10 Average Rectified Current I, DC Forward Current Recurrent Peak Forward Current
~w,
1 2
1401
150C 150C
0.350 mW
n*
,"
1 2
1402
1403
200 V 200 mA 300 mA 400 mA
G
1
1404
2
n
3
1405
PACKAGE FDS01401 FDS01402 FDS01403 FDS01404 FDS01405
TO-236AA/AB
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 4) SYMBOL Bv IA VF CHARACTERISTIC Breakdown Voltage Reverse Voltage Leakage Current Forward Voltage 0.76 MIN 200 40 100 0.80 0.92 1.0 1.1 2.0 50 MAX UNITS V nA nA V V V V pF ns TEST CONDITIONS IA = 100 J.LA VA = 120 V VA = 175 V IF IF IF IF = 10 mA =50 mA = 200 mA = 300 mA
C t"
Capacitance Reverse Recovery Time
VA = 0, f = 1.0 MHz IF = 30 mA, I" = 1.0 mA, RL = 100!1
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and junction-to-ambient thermal resistance of 357" C/W (derating factor of 2.8 mW/o C). 4. For product family characteristic curves, refer to Curve Set D-2.
3-59
FAIRCHILD
FDS01501 - 1505
High Conductance Low Leakage Diode
Po ... 350mW@TA=25C Bv ... 200 V (Min) IA ... 1.0 nA (Max) @ 125 V
Connection Diagram
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Device Dissipation at TA = 25C Voltages & Currents W,v Working Inverse Voltage 10 Average Rectified Current If DC Forward Current if Recurrent Peak Forward Current
*wc
3
c:J
1501
1 2
3
""
1
~
2
3
1502
0.350 mW
n
1 1
1503
2
3
150 V 200 mA 300 mA 400 mA
n
0
1
1504
2
1505
2
PACKAGE FDS01501 FDS01502 FDS01503 FDS01504 FDS01505
TO-236AA/AB TO-236AA/AB TO-236AA/AB TO-236AA/AB TO-236AAlAB
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 4) SYMBOL CHARACTERISTIC Breakdown Voltage Bv IA Reverse Voltage Leakage Current MIN 200 MAX 1.0 10 5.0 3.0 0.60 0.69 0.80 0.83 0.87 0.90 0.68 0.80 0.88 0.92 .1..0 1.15 4.0 UNITS V nA nA pA pA V mV mV mV mV mV pF TEST CONDITIONS
VF
Forward Voltage
CT
Diode Capacitance
= 5 pA VA = 125 V VA = 180 V VA = 180 V. TA = 150C VR = 125 V. TA = 150C IF = 1.0 mA IF = 10 mA IF = 50 mA IF = 100 mA IF = 200 mA IF = 300 mA VA = O. f = 1.0 MHz
IA
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150' C and junction-to-ambient thermal resistance of 357' C/W (derating factor of 2.8 mW/' C). 4. For product family characteristic curves, refer to Curve Set D-2.
3-60
FAIRCHILD
A. Schlumberger Company
FDS01701 - 1705
Picosecond Computer Diode
Po ... 350 mW @ TA = 25 C CT ... 1.0 pi (Max) @ VR = 0, I = 1.0 MHz t rr ... 700 ps (Max) @ I, = I, = 10 mA, RL = 100
Connection Diagram
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Device Dissipation at TA = 2SoC Voltages & Currents WIV Working Inverse Voltage 10 Average Rectified Current It DC Forward Current i, Recurrent Peak Forward Current
*wc
1 2
0,
,
1701
""
1
0.350 mW
n
1 1
*
,
2 2
1702
1703
20V SOmA lS0 mA lS0 mA
,
1704
2
n
PACKAGE FDS01701 FDS01702 FDS01703 FDS01704 FDS0170S SYMBOL CHARACTERISTIC Breakdown Voltage Bv IR VF Reverse Voltage Leakage Current Forward Voltage MIN MAX
170S
TO~236AAIAB TO-236AA/AB T0-236AA/AB TO-236AAIAB TO-236AAlAB
30
SO 0.42 0.S2 0.64 0.76 0.81 0.89 O.SO 0.61 0.74 0.88 0.9S 1.1 1.0 700
UNITS V nA V V V V V V pF ps
TEST CONDITIONS
CT trr
= S.O pA VR = 20 V IF = 10 pA IF = 100 pA IF = 1.0 mA IF = 10 mA IF = 20 mA IF = SO mA VR = 0, f = 1.0 MHz IF = IR = 10 mA, IRR = 1.0 mA,

IR RL
= 100 n
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 3570 ClW (derating factor of 2.8 mW/o C). 4. For product family characteristic curves. refer to Curve Set 0-3.
3-61
FAIRCHILD
A Schlumberger Companv
FJT11 OO/FJT11 01
Ultra Low Leakage Diodes
IR ... 1.0 pA (MAX)@5V(FJT1100) BV ... 20 V (MIN) (FJT1100) ABSOLUTE MAXiMUM RATINGS (Note 1) Temperature Storage Temperature Range Maximum Junction Operating Temperalure Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating factor (from 25 C) Maximum Voltage and Current WIV Working Inverse Voltage If Continuous Forward Current -55C to +200C +175C +260C
PACKAGES
FJT1100 FJT1101
00-7 00-7
250mW 1.67 mW/C
FJT1100 FJTll0l
25 V 15 V 150 rnA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL CHARACTERISTIC Breakdown Voltage Reverse Current FJTll00 FJTll0l FJTll00 FJTll0l .. VF C Forward Voltage Capacitance FJTll00 FJTll0l FJTll00 FJTll0l MIN 30 20 1.0 10 5.0 15 1.05 1.10 1.5 1.8 MAX UNITS V V pA pA pA pA V V pF pF TEST CONDITIONS IR IR
ev
IR
= 5.0/loA = 5.0/loA VR = 5.0 V VR = 15V VR = 5.0V VR = 15V

IF IF
= 50 mA VR = 0, f = lMHz VR = 0, f = 1MHz
50 rnA
NOTES:
1. The ar. limiting value. above which the service.billty of the diode may be impaired. 2. Thel. are steady Itate limits. 'rhe factory should be consulted on applications involving pulsed of low duty-cycl. operation. 3. For product family cha,acterlatlc curve. and applicationa information, refer to Chapter 4. De.
3-62
FAIRCHILD
FPQ22221FQS02222
NPN Quad General Purpose Amplifier
Compact Popular IC Package . .. 4 Transistors per Package; 14 Pin Plastic DIP Compatible with Automatic Insertion Equipment (FPQ2222) High Breakdown Voltage ... 40 V VCEO(Sus) DC Current Gain Specified '" 10 to 300 mA Similar to 2N2222 Series Gull Wing Surface Mount Package (FQSO)
CONNECTION DIAGRAM
NC
NC
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -550 C to 1500 C Operating Junction Temperature 1500 C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 0 C Ambient Temperature (Each Transistor) 25 0 C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBo Collector to Base Voltage VEBO Emitter to Base Voltage Collector Current Ic FPQ 0.65 W
2.0 W 40 V 60 V 5.0 V 600 mA
CD3
FQSO
1.0 W
PACKAGE FP02222 FOS02222
TO-116 14S0lC

SYMBOL BVcBo BVEBo lEBO ICBO hFE CHARACTERISTIC Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Pulse Current Gain (Note 4) 75 100 30 MIN MAX UNITS V V 50 50 nA nA TEST CONDITIONS Ic = 10 p.A, IE = 0 IE = 10 p.A, Ic = 0 VEB = 3.0 V, Ic = 0 VCB = 50 V, IE = 0 Ic = 10 mA, VCE = 10 V Ic = 150 mA, VCE = 10 V Ie = 300 mA, VCE = 10 V V 1.3 2.6 0.4 1.6 8.0 30 200 V V V V pF pF MHz Ic = 10 mA, IB = 0 Ic = 150 mA, IB = 15 mA Ic = 300 mA, IB = 30 mA Ic = 150 mA, IB = 15 mA Ic = 300 mA, IB = 30 mA Vcs = 10 V, f = 100 kHz VSE = 0.5 V, f = 100 kHz Ie = 20 mA, VCE = -20 V, f= 100 MHz
60
5.0
VCEO(sus)
VBElsat)
Collector to Emitter Sustaining Voltage Base to Emitter Saturation Voltage (Pulsed) (Note 4) Collector to Emitter Saturation Voltage (Note 4) Output Capacitance Input Capacitance Current Gain Bandwidth Product
40
VeE (sat! Cob Cib
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 Cand junction-to-ambient thermal resistance of 62,50 C/W (derating factor of 16 mW/o C). FQSO power dissipation data is only an estimate, and may be subject to change without notice. 4. Pulse conditions: length = 300 !'s: duty cycle = 1%. 5. For- product family characteristic curves, refer to Cur.ve Set T145.
3-63
--
FPQ2907/FQS02907
PNP Quad General Purpose Amplifier
High Breakdown Voltage ... 40 V VCEOtsus) DC Current Gain Specified . .. 10 to 300 mA Similar to 2N2907 Series
Connection Diagram
C
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature (Each Transistor) 25 C Ambient Temperature Voltages & Currents (Notes 4 & 5) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
For sOle power dissipation. consult factory.
NC NC
-55 C to 150 C 150 C
0.65 W 2.0W
PACKAGE FPQ2907 FQS02907
TO-116 14-S01C
--40 V -60 V -5.0 V 600 mA

SYMBOL CHARACTERISTIC BVcBo BVEBo lEBO ICBO hFE Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Pulse Current Gain 75 100 50 V -0.4 -1.6 -1.3 2.6 8.0 30 200 V V V V pF pF MHz MIN -60 -5.0 50 50 MAX UNITS V V nA nA TEST CONDITIONS Ic = 10 !lA, IE = 0 IE = 10 !lAo Ic = 0 VEB = 3.0 V, Ic = 0 VeB = -50 V, IE = 0 Ic = 10 rnA, VCE = -10 V Ic = 150 mA, VeE = -10 V Ic = 300 mA, VCE = -10 V Ic = 10 mA, Ie = 0 Ic = 150 rnA, Ie = 15 mA Ic = 300 mA, Ie = 30 rnA Ic = 150 mA, Ie = 15 rnA Ic = 300 rnA, Ie = 30 mA Vee = -10 V, f = 100 kHz VeE = 0.5 V, f = 100 kHz Ic =20 mA, VeE = -20V, f = 100MHz
VCEOtsus)
VCE(satJ
Collector to Emitter Sustaining Voltage -40 Collector to Emitter Saturation Voltage (Note 4) Base to Emitter Saturation Voltage (Pulsed) (Note 4) Output Capacitance Input Capacitance Current Gain Bandwidth Product
VeEtsaU
Cob C;b
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits., The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-ambient thermal resistance of 62.50 C/W (derating factor of 16 mW/o C). 4. Pulse conditions: length 0 300 !,s; duty cycle 0 1%. 5. For product family characteristic curves, refer to Curve Set T212.
3-64
FAIRCHILD
FPQ3724/FPQ3725 FQS03724/FQS03725
NPN Quad Core Driver
VCEOlsusl ... 50 V (Min) (FPQ3725) 25 ns (Typ) loll ... 45 ns (Typ) High Current ... 500 mA
ton .
Connection. Diagram
C
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures -65 C to 1500 C Storage Temperature Operating Junction Temperature 150C Power Dissipation (Notes 2 & 3) Total Dissipation at 250 C Ambient Temperature 25 C Ambient Temperature (Each Transistor)
For SOIC power dissipation, consult factory.
NC
NC
I
TO-116 TO-116 14-S01C 14-S01C
2.0W 0.65W
PACKAGES FP03724 FP03725 FOS03724 FOS03725
ELECTRICAL CHARACTERISTICS (21)0 C Ambient Temperature unless otherwise noted) (Note 5) 3724 SYMBOL CHARACTERISTIC MIN MAX Collector to Emitter Breakdown 70 BVCES Voltage BVcao BVEBO Icao hFE VCElsali Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current DC Pulse Current Gain (Note 4) Collector to Emitter Saturation Voltage (Note 4) 50 30 0.5 0.5 0.6 70 6.0 1.7 120 50 20 0.5 0.5 0.6 V V V 3725 MIN MAX 80 80 6.0 1.7 120 UNITS V V V J.lA J.lA TEST CONDITIONS Ic = 10 J.lA, IB = 0 Ie = 10 J.lA, IE = 0 IE = 10 J.lA, Ic = 0 Vca = 40 V, IE = 0 VCB = 40 V, IE =0, TA = 1000 C Ic = 100 mA, VCE = 1.0 V Ie = 500 mA, VCE = 1.0 V Ic = 500 mA, la = 50 mA Ic = 500 mA, la = 50 mA, TA = -55C Ic = 500 mA, la = 50 mA, TA = 1000C
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150' C and junction-to-ambient thermal resistance of 62.5' CIW (derating factor of 16mW/' C) for FPQ3724 and FPQ3725. 4. Pulse conditions: length = 300 /lS; duty cycle = 1%. 5. For product family characteristic curves, refer to Curve Set T139. Package mounted on 99.5% alumina B mm x B mm x 0.6 mm.
3-65
FPQ3724/FPQ3725 FQS03724/FQS03725
ELECTRICAL CHARACTERISTICS (25" C Ambient Temperature unless otherwise noted) (Note 5)
3724
SYMBOL CHARACTERISTIC VBEcsatl VCEocsuSI Base to Emitter Saturation Voltage (Note 4) Collector to Emitter Sustaining Voltage (Note 4) Collector to Base Capacitance Emitter to Base Input Capacitance High Frequency Current Gain Storage Time (test circuit no. 265) Turn On Time (test circuit no. 265) Turn Off Time (test circuit no. 265) MIN MAX
3725
MIN
MAX UNITS V V Ic Ic TEST CONDITIONS
1.2 40 12 60 2.0 50 35 60 2.0 50
1.2
= 500 mA, = 10 mA, = 10 V,
IB
= 50 mA
IB
=0 =0
Ccb Cab
hIe
12 60
pF pF
VCB
IE = 0
VBE = 0.5 V, Ic
Ic =50 mA, VCE = 10 V, f = 100 MHz
to
50 35 60
ns ns ns
Ic
= 500 mA, IBI = IB2 = 50 mA
ton toll
Ic = 500 mA, IBI = 50 mA Ic = 500 mA, IBI
= IB2 = 50 mA
3-66
FAIRCHILD'
FPQ3904/MPQ3904 FQS03904
Quad NPN Switching Transistor
The 3904 features four NPN silicon transistors in one package. The transistors are similar to 2N3904.
Fast Switching JEDEC (TO-116) 14-Pin Plastic DIP (FPQ/MPQ) Auto-Insertion Compatible Gull wing surface mount package (FQSO)
Connection Diagram
NC
NC
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55 C to 150 C Operating Junction Temperature 150C Lead Temperature (Soldering, 10 s) 275C Power Dissipation (Notes 2, 3 & 5) Total Dissipation at TA=25C Derate above 25 C Power Dissipation at TA = 25C Each Transistor Derate above 25 C Voltages & Currents VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current PACKAGE FPQ3904 MPQ3904 FQS03904
I
FQSO* 1.0 W
FPQ/MPQ 900 mW
TO-116 TO-116 14 SOIC
7.2 mW/o C 8.0 mW/o C

500 mW 300 mW 4.0 mW/o C 2.4 mW/o C
40V
60 V 6.0V
200 rnA
SYMBOL CHARACTERISTIC BVcBo BVEBo ICBO lEBO Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current
MIN 60 6.0
FPQ/FQSO MAX TYP
UNITS V V
TEST CONDITIONS Ic = 10 pA, IE = 0 IE = 10 pA, Ic = 0 VCB = 40 V, IE = 0 VEB = 3.0 V, Ic = 0
50
50
nA nA
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150' G and junction-to-ambientthermal resistance of 139' G/W (derating factor of 7.2 mWI' C). 4. Pulse conditions: length =300 I'S; duty cycle = 1%. 5. FOSO power dissipation data is only an estimate. and may be subject to change without notice. 6. For product family characteristic curves, refer to Curve Set T215. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-67
FPQ3904/MPQ3904 FQS03904

SYMBOL CHARACTERISTIC hFE DC Current Gain (Note 4) MIN 40 70 100 50 FPQ/FQSO TYP MAX UNITS Ic Ic Ic Ic V V V V V MHz 4.0 8.0 30 125 MPQ TYP pF pF ns ns TEST CONDITIONS = 0.1 rnA, VCE = 1.0 V = 1.0 rnA, VCE = 1.0 V =10 rnA, VCE = 1.0 V = 50 rnA, VCE = 1.0 V
300 0.2 0.3
VCEC,l VBECtl VCEOCSUSl
Pulsed Collector Saturation Voltage (Note 4) Pulsed Base Saturation Voltage (Note 4) Collector to Emitter Sustaining Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Turn-On Time Turn-Off Time 0.65 40 250
Ic = 10 rnA, IB = 1.0 rnA Ic = 50 rnA, IB = 5.0 rnA Ic = 10 rnA, IB = 1.0 rnA Ic = 50 rnA, IB = 5.0 rnA Ic = 1.0 rnA, IB = 0 Ic = 10 rnA, VCE = 20 V, f= 100 MHz VCB = 5.0 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz Ic = 10 rnA, IBI = IB21.0 rnA Ic = 10 rnA, IBI = IB21.0 rnA
0.85 0.95
h
Cab Cib ton toft
SYMBOL CHARACTERISTIC BVcBo BVEBO ICBO lEBO hFE Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 4)
MIN
MAX
UNITS V V
TEST CONDITIONS Ic = 10 pA, IE = 0 IE = 10 pA, Ic = 0 VCB = 40 V, IE = 0 VEB = 3.0 V, Ic = 0 Ic = 0.1 rnA, VCE = 1.0 V Ic = 1.0 rnA, VCE = 1.0 V Ic = 10 rnA, VCE = 1.0 V
60
6.0 50 50 30 50 75 0.2 0.85 40 250 4.0 8.0 30 125
nA nA
VCECs.,l VBECs.,l VCEocsuSl
Pulsed Collector Saturation Pulsed Base Saturation Voltage (Note 4) Collector to Emitter Sustaining Voltage Current Gain Bandwidth Product Output Capacitance Input CapaCitance Turn-On Time Turn-Off Time
V V V MHz pF pF ns ns
Ic = 10 rnA, IB = 1.0 rnA Ic = 10 rnA, IB = 1.0 rnA Ic = 1.0 rnA, IB = 0 Ic = 10 rnA, VCE;' 20 V, f = 100 MHz VCB = 5.0 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz Ic = 10 rnA, IBI = IB21.0 rnA Ic == 10 rnA, IBI = IB2 1.0 rnA
h
Cob Cib ton toft
3-68
FAIRCHILD
FPQ3906/MPQ3906 FQS03906
Quad PNP Switching Transistor
The 3906 features four PNP silicon transistors in one package. The transistors are similar to 2N3906.
Fast Switching JEDEC (TO-116) 14-Pln Plastic DIP (FPQ/MPQ) Auto-Insertion Compatible Gull wing surface mount package (FQSO)
Connection Diagram
C
NC
NC

C
Temperatures Storage Temperature -55 C to 150 C Operating Junction Temperature 150C Lead Temperature (Soldering, 10 s) 275C Power Dissipation (Notes 2, 3 & 5) Total Dissipation at TA = 25C Derate above 25 C Power Dissipation at TA = 25 C Each Transistor Derate above 25 C Voltages & Currents
PACKAGE FPQ3906 MPQ3906 FQS03906
TO-116 TO-116 14 SOIC
FQSO' 900mW 1.0W 7.2 mW/o C 8.0 mW/o C
FPQ/MPQ
500 mW 300 mW 4.0 mW/o C 2.4 mWr C
Vceo VCBO VeBo Ic
Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage Collector Current
40V
40 V 5.0V 200mA
Electrical Characteristics (25C Ambient Temperature unless otherwise noted) (Note 5)

SYMBOL CHARACTERISTIC BVcBo BVeBo ICBO leBo Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current MIN
40
FPQ/FQSO TYP MAX
UNITS V V Ic Ie
TEST CONDITIONS
= 10 ~, = 10 ~,
Ie Ic
=0 =0
5.0 20 50
nA nA
VCB . Vea
= 30 V, Ie = 0 = 4.0 V, Ie = 0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 Cand junction-to-ambient thermal resistance of 139C/W (derating factor 01 7.2 mWfO C). 4. Pulse conditions: length = 300 f!S; duty cycle = 1%. 5. FOSO power dissipation data is only an estimate, and may be subject to change without notice. 6. For product family characteristic curves, refer to Curve Set T215. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-69
FPQ3906/MPQ3906 FQS03906
Electrical Characteristics (25 C C Ambient Temperature unless otherwise noted) (Note 5)

SYMBOL CHARACTERISTIC hFE DC Current Gain (Note 4) MIN 40 70 100 50 FPQ/FQSO TYP MAX UNITS Ic Ic Ic Ic V V V V V MHz 4.5 10 40 200 MPQ TYP pF pF ns ns = = = = TEST CONDITIONS 0;1 rnA, VCE = 1.0 V 1.0 rnA, VCE = 1.0 V 10 mA,VCE = 1.0 V 50 rnA, VCE = 1.0 V
300 0.25 0.4
VCEIs&tl VBEIs&tl Vceolsusl
Pulsed Collector Saturation Voltage (Note 4) Pulsed Base Saturation Voltage (Note 4) Collector to Emitter Sustaining ,Voltage 0.65
Ic = 10 rnA, IB = 1.0 rnA Ic =50 rnA, IB = 5.0 rnA ' Ic = 10 rnA, 18 = 1.0 rnA Ic = 50 rnA, IB = 5.0 rnA Ic = 1,0 rnA, 18 = 0 Ic = 10 rnA, Vce = 20 V, f = 100 MHz VCB = 5.0 V, f = 1.0 MHz VeB = 0.5 V, f = 1.0 MHz Ic = 10 rnA, IBI = IB21.0 rnA Ic = 10 rnA, IBI = IB21.0 rnA
0.85 0.95
40
fT
Cob Clb ton toft
Current Gain Bandwidth Product ' 300 Output Capacitance Input Capacitance Turn-On Time Turn-Off Time
SYMBOL CHARACTERISTIC BVcBo BVeBO ICBO leBO hFe Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 4)
MIN
MAX
UNITS V V
TEST CONDITIONS Ic = 10 pA, Ie = 0 le=10pA,lc=0
40
5.0 50 50 40 60 75 0.25 0.85 40 200 4.5 10 40 200
nA nA
= 30 V, Ie = 0 VeB = 4.0 V, Ic = 0 Ic = 0.1 rnA, Vce = 1.0 V

VCB Ic = 1.0 rnA, Vce = 1.0 V Ic = 10 rnA, Vce = 1.0 V Ic Ic Ic
Vcelsatl VBelsati Vceolsusl
Pulsed Collector Saturation Pulsed Base Saturation Voltage (Note 4) Collector to Emitter Sustaining Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance Turn-On Time Turn-Off Time
V V V MHz pF pF ns ns
= 10 rnA, = 10 rnA, = 1.0 rnA,
18 18
= 1.0 rnA = 1.0 rnA
IB == 0
h
COb 'Cib ton tOft
Ic = 10 rnA, Vce = 20 V, f = 100 MHz Vce
= 5.0 V,
f = 1.0 MHz
VeB = 0.5 V, f = 1.0 MHz Ic = 10 rnA, IBI = IB2 1.0 rnA Ic = 10 rnA, IBI = IB2 1.0 rnA
3-70
FAIRCHILD
FPQ6426/MPQ6426 FQS06426
Quad NPN Darlington Transistor
The 6502 features two NPN and two PNP complementary silicon transistors in one package. The transistors are similar to 2N2222 and 2N2907 devices. High Breakdown Voltage JEDEC (TO-116) 14-Pin Plastic DIP (FPQ/MPQ) Auto-Insertion Compatible Gull wing surface mount package (FQSO)
Connection Diagram
NC
NC
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55 0 C to 1500 C Operating Junction Temperature 150 C Lead Temperature (Soldering, 10 s) 275C Power Dissipation (Notes 2, 3 & 5) Total Dissipation at TA = 25C Derate above 25 C Power Dissipation at TA = 25 C Each Transistor Derate above 25 C Voltages & Currents VeEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current
TO-116 TO-116 14 SOIC
FPQ/MPQ FQSO* 1.0 W 900 mW 7.2 mW/oC 8.0 mW/oC 500 mW 300mW 4.0 mW/oC 2.4 mW/oC
30V
40 V 12 V 500 mA

SYMBOL BVcBo BVEBO ICBO lEBO CHARACTERISTIC Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current FPQ/FQSO MIN MAX 40 12 50 100 MPQ MIN MAX 40 12 100 100 UNITS V V nA nA TEST CONDITIONS Ic = 100 /lA, IE = 0 IE = 10
JLA,
Ic = 0
Vcs = 30 V, IE = 0 VEs = 10 V, Ic = 0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-ta-ambient thermal resistance of 139" ClW (derating factor of 7.2 m wr C). 4. Pulse conditions: length = 300 "s; duty cycle = 1% 5. FQSO power dissipation data is only an estimate, and may be subject to change without notice. 6. For product family characteristic curves, refer to Curve Set T164. Package mounted on 99.5% alumina 8, mm x 8 mm x 0.6 mm.
3-71
FPQ6426/MPQ6426 FQS06426

SYMBOL CHARACTERISTIC hFE VCE(satl VeE(ON) VCEO(SUS) OCCurrent Gain (Note 4) Pulsed Collector Saturation Voltage (Note 4) Pulsed Base-Emitter "On" Voltage (Note 4) Collector to Emitter Sustaining Voltage 30 FPQ/FQSO MIN MAX 5000 10000 1.5 2.0 30 125 8.0 15 8.0 15 MPQ MIN MAX 5000 10000 1.5 2.0 V V V MHz pF pF UNITS TEST CONDITIONS Ie = 10 rnA, VCE =5.0 V Ie = 100 rnA, VCE = 5.0 V Ic = 100 rnA, Ie = 0.1 rnA Ic = 100 rnA, VCE = 5.0 V Ic = 10 rnA, Ie = 0 Ic = 10 rnA, VCE = 5.0 V, f = 100 MHz Vce = 10 V, f = 1.0 MHz VEe = 0.5 V, f = 1.0 MHz
h
COb Cib
Current Gain Bandwidth Product 125 Output Capacitance Input Capacitance
3-72
FAIRCHIL.D
FPQ6502lMPQ6502 FQS06502
Quad Complementary Pair Transistor
The 6426 features four NPN silicon darlington transistors in one package. The transistors are similar to MPSA13.
hFE
Connection Diagram
C C
5000 (Min.) @ 10 mA JEDEC (TO-116) 14-Pin Plastic DIP (FPQ/MPQ) Auto-Insertion Compatible Gull wing surface mount package (FQSO)
NC
NC
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2, 3 & 5) Total Dissipation at TA=25C Derate above 25 C Power Dissipation at TA = 25 C Each Transistor Derate above 25 C Voltages & Currents VeEo Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Collector Current Ie
-55 C to 150 C 150C
FQSO' 1.0W 10mW/oC 8.0mWf'C
FPQ/MPQ 1.25W
PACKAGE FP06502 MP06502 FOS06502
TO-116 TO-116 14 SOIC
0.65 W 300 mW 5.2 mW/o C 2.4 mWf' C

FPQ/FQSO 40 V 60 V 5.0 V SOO rnA MPQ 30V

SYMBOL CHARACTERISTIC BVeBo BVEBO leBo IEeo Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current FPO/FOSO MIN MAX 60 5.0 20 20 MF 0 MIN MAX 60 5.0 30 30 UNITS V V nA nA Ie IE TEST CONDITIONS
= 10 jjA., = 10 jjA.,
IE Ie
=0 =0
VeB
= 50 V, IE = 0 VEe = 3.0 V, Ie = 0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum iunction temperature of 150 Cand iunction-to-ambient thermal resistance of 100 C/W (derating factor of 10 mW/ C). 4. Pulse conditions: length = 300 jlS; duty cycle = 1%. 5. FQSO power dissipation data is only an estimate, and may be subject to change without notice. 6. For product family characteristic curves, refer to Curve Set T145 for NPN and T212 for PNP. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-73
FPQ6502lMPQ6502 FQS06502

SYMBOL CHARACTERISTIC hFE DC Current Gain (Note 4) FPQ/FQSO MIN MAX 35 50 75 100 30 VCE(Sati VCEO(sus) Pulsed Collector Saturation Voltage (Note 4) Collector to Emitter Sustain ing Voltage 40 0.4 1.0 30 200 0.4 1.4 V V V MHz MPQ MIN MAX 50 75 100 30 UNITS Ic Ic Ic Ic Ic Ic TEST CONDITIONS
= 0.1 mA, VCE = 10 V = 1.0 mA, VCE = 10 V = 10 mA, VCE = 10 V = 150 mA, VCE = 10 V = 300 mA, VCE = 10 V = 500 mA, V"E = 10 V Ic = 150 mA, Ie = 15 mA Ic = 300 mA, Ie = 30 mA Ic = 10 mA, Ie = 0 = 20 V,
iT
Cob Clb
Current Gain Bandwidth Product 200 Output Capacitance Input CapaCitance
' Ic = 50 mA, VCE f = 100 MHz Vce VEe
B.O
30
B.O
30
pF pF
= 10 V, f = 1.0 MHz = 2.0 V, f = 1.0 MHz
3-74
FAIRCHILD
FPQ6700/MPQ6700 FQS06700
Quad Complementary Pair Transistor
The 6700 features two NPN and two PNP silicon transistors in one package. The transistors are similar to 2N3904 and 2N3906 devices.
Fast Switching JEDEC (TO-116) 14-Pin Plastic DIP (FPQ/MPQ) Auto-Insertion Compatible Gull wing surface mount package (FQSO)
Connection Diagram
Ne
He
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures _55 C to 150 C Storage Temperature 150C Operating Junction Temperature Lead Temperature (Soldering, 10 s) Power Dissipation (Notes 2, 3 & 5) Total Dissipation at TA = 25C Derate above 25 C Power Dissipation at TA = 25 C Each Transistor Derate above 25 C Voltages & Currents VeEo Collector to Emitter Voltage VeBo Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current
TO-116 TO-116 14 SOIC
FPQ/MPQ FQSO* 900 mW 1.0 W 7.2 mW/o C 8.0 mWr C
500 mW 300 mW 4.0 mW/o C 2.4 mW/o C
40 V 40 V 5V 200 mA

SYMBOL CHARACTERISTIC BVeBo BVEBo leBo lEBO Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current MIN FPQ/FQSO MAX TYP UNITS V V 20 20 nA nA Ie = TEST CONDITIONS
10~, ~,
40
5.0
IE = 0 Ie = 0
IE = 10
VeB = 30 V, IE = 0 VEB = 4.0 V, Ie = 0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 Cand junction-to-ambient thermal resistance of 1390 ClW (derating factor of 7.2 mWr C). 4. Pulse conditions: length = 300 1'8; duty cycle = 1%. 5. FOSO power dissipation data is only an estimate, and may be subject to change without notice. 6. For product family characteristic curves, refer to Curve Set T144 for NPN and T215 for PNP. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-75
FPQ6700/MPQ6700 FQS06700
SYMBOL hFE
CHARACTER ISTIC DC Current Gain (Note 4)
MIN 40 70 100 60
FPQ/FQSO TYP MAX
UNITS Ie Ie Ie Ie = = = =
TEST CONDITIONS 0.1 rnA, VeE = 1.0 V 1.0 rnA, VeE = 1.0 V 10 rnA, VeE = 1.0 V 50 rnA, VeE = 1.0 V
VeElsatl VBElsatl VeEOISuS)
Pulsed Collector Saturation Voltage (Note 4) Pulsed Base Saturation Voltage (Note 4) Collector to Emitter Sustaining Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance NPN PNP Turn-On Time Turn-Off Time 40 200 MPQ TYP 40 250
0.25 0.5 0.85 1.0
V V V V V MHz
Ie = 10 rnA, IB = 1.0 rnA Ie = 50 rnA, IB = 5.0 rnA Ie = 10 rnA, IB = 1.0 rnA Ie = 50 rnA, IB = 5.0 rnA Ie = 10 rnA, IB = 0 Ie = 10 rnA, VeE = 20 V, f = 100 MHz VeB = 5.0 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz Ie = 10 rnA, IB1 = IB2 1.0 rnA Ie = 10 rnA, 181 = 1821.0 rnA
h
COb Cib
4.5 8.0 10
pF pF pF ns ns
ton toft
SYMBOL BVeBo BVEBO leBO lEBO hFE
CHARACTERISTIC Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 4)
MIN
MAX
UNITS V V
TEST CONDITIONS Ie = 10 pA, IE = 0 IE = 10 pA, Ie = 0 VeB = 30 V, IE = 0 VEB = 4.0 V, Ie = 0 Ie = 0.1 rnA, VeE = 1.0 V Ie = 1.0 rnA, VeE = 1.0 V Ie = 10 rnA, VeE = 1.0 V
40
5.0 50 50 30 50 70 0.25 0.9 40 200 4.5 8.0 10 40 200 3-76
nA nA
VeElsatl VBElsatl VeEOISUS)
Pulsed Collector Saturation Pulsed Base Saturation Voltage (Note 4) Collector to Emitter Sustaining Voltage Current Gain Bandwidth Product Output Capacitance Input Capacitance NPN PNP Turn-On Time Turn-Off Time
V V V MHz pF pF pF ns ns
Ie = 10 rnA, IB = 1.0 rnA Ie = 10 rnA, IB = 1.0 rnA Ie = 10 rnA, IB = 0 Ie = 10 rnA, VeE = 20 V, f = 100 MHz VCB = 5.0 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz VEB = 0.5 V, f = 1.0 MHz Ie = 10 rnA, IB1 =IB21.0 rnA Ie = 10 rnA, IB1 = IB2 1.0 rnA
h
Cob Cib
ton toft
FPT100/A/B FPT110/A/B
General Purpose Silicon Planar Phototransistor
General Description The FPT100 and FPT110 are 3-terminal npn Planar phototransistors with exceptionally stable characteristics and high illumination-sensitivity. The availability of the base pin gives wide latitude for flexible circuit design. The case is made of a special plastic compound with transparent resin encapsulation that exhibits stable characteristics under high humidity conditions. The controlled sensitivities offered in the A and B versions give the circuit designer increased flexibility. Exceptionally Stable Characteristics Controlled Sensitivities ABSOLUTE MAXIMUM RATINGS Temperatures & Humidity Storage Temperature Operating Temperature Relative Humidity at 65C Power Dissipation (Notes 1 & 2) Total Dissipation at Tc = 25C TA = 25C Voltages & Currents (Note 5) Vce Collector-to-Base Voltage VCES Collector-to-Emitter Sustaining Voltage (Note 3) Ic Collector Current PACKAGE FPT100 FPT100A FPT100B FPT110 FPT110A FPT110B
OPTO-26 OPTO-26 OPTO-26 OPTO-28 OPTO-28 OPTO-28
-55 C to 100 C -55 C to 85 C 85%
200 mW 100 mW
50 V 30V 25 mA
SYMBOL CHARACTERISTIC BVECO Emitter-to-Collector Breakdown Voltage (Note 5) BVceo Collector-to-Base Breakdown Voltage (Note 5)
MIN
TYP 7.0
MAX
UNITS V V
TEST CONDITIONS IE = 100 pA Ic = 100 /lA
50
120
NOTES: 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2. These ratings give a maximum junction temperature of 85 0 Cand junction-to-case thermal resistance of 300 0 C/W (derating factor of 3.33 m W/ o C, and a junction-to-ambient thermal resistance of 6000 C/W (derating factor of 1.67 mW/o C). 3. Measured at noted irradiance as emitted from a tungsten filament lamp at a color temperature of 28540 K. The effective photosensitive area is typically 1.25 mm' (FPT100A/B) and 0.78 mm' (FPT110A/B). 4. These are values obtained at noted irradiance as emitted from a GaAs source at 900 nm. 5. Measured with radiation flux intensity of less than 0.1 p.W/cm' over the spectrum from 100-1500 nm. 6. Rise time is defined as the time required for ICE to rise from 100/0 to 90% of peak value. Fall time is defined as the time required for ICE to decrease from 900/0 to 100/0 of peak value. Test conditions are: Vc = 5.0 V, icE = 4.0 mA, RL = 100 n, GaAs source. 7. No electrical connection to base lead. 8. No electrical connection to em itter lead. 9. For product family characteristic curves, refer to Curve Set FPT100.
3-77
FPT100/AlB FPT110/AlB

SYMBOL CHARACTERISTIC ICED ICBO ICEflll Collector Dark Current (Note 5) Collector Dark Current (Note 5) Photo Current, Tungsten Source (Notes 3 & 7) (FPT100/A/B) (FPT110/A/B) Photo Current, GaAs Source (Notes 4 & 7) (FPT110/A/B) (FPT110/A/B) Collector-to-Emitter Saturation Voltage (FPT100/A/B) (FPT110/A/B) Collector-to-Emitter Sustaining Voltage (Note 5) Light Current Rise Time (Note6) Light Current Fall Time (Note6) Responsivity, Tungsten Source (Notes 3 and 8) (FPT100/A/B) (FPT110/A/B) Responsivity, GaAs Source (Notes 4 and 8) (FPT100/A/B) (FPT110/A/B) 30 MIN TYP 2.0 0.25 0.025 MAX 100 25 0.5 UNITS nA nA VCE VCB VCB TEST CONDITIONS
,;A
rnA
= 5.0 V = 10 V = 10 V, TA = 65 VCE = 5.0 V, H = 5.0 mW/cm 2
0.2 0.2
1.4 0.88 rnA VCE
ICE(l1l
= 5.0 V,
= 5.0 mW/cm2
0.6 0.6
4.2 2.7 V 0.16 0.16 50 2.8 2.8 0.3 0.33 V

J.1.s J.1.s
VCE(Sall
Ic
= 500 ,;A, H = 20 mW/cm 2
VCEO(SUS) t, tf RCB
Ie = 1.0 rnA (pulsed)
J.1.A/ VCE mW/cm 2 0.6 0.6 1.6 1.0
= 10 V
RCB
,;A/
mW/cm2 1.8 1.8 4.8 3.0
VCE
= 10 V
3-78
FAIRCHILD
FPT120/AIB/C FPT130/AIB
High Sensitivity Silicon Phototransistors
General Description The FPT120/A/B/C and FPT130/A/B are silicon nitride protected NPN Planar phototransistors with exceptionally stable characteristics and high illumination-sensitivity. The case is made of a special plastic compound with transparent resin encapsulation. The controlled sensitivities offered in the A, Band C versions give the circuit designer increased flexibility. High Illumination Sensitivity Availability of Base Pins for Flexible Circuit Design ABSOLUTE MAXIMUM RATINGS Temperatures & Humidity
PACKAGE
FPT120 FPT120A FPT120B FPT120C FPT130 FPT130A FPT130B
OPTO-26 OPTO-26 OPTO-26 OPTO-26 OPTO-28 OPTO-28 OPTO-28
-55 C to 150 C Storage Temperature -55 C to 85 C Operating Temperature 260C Pin Temperature (Soldering, 5 s) 85% Relative Humidity at 65C
Power Dissipation (Note 1) Total Device Dissipation at Te = 25C Total Dissipation at TA = 25C Voltages & Currents VeElsuBICollector-to-Emitter Sustaining Voltage (Note 4) Ie Collector Current
200mW 100 mW
20V 25 mA
SYMBOL CHARACTERISTIC Emitter-to-Collector BVECO Breakdown Voltage (Note 5) leEo Collector Dark Current (Note 5)
MIN
TYP 5.0 10
MAX
UNITS V nA
TEST CONDITIONS lEe = 100
IlA
100
VeE =5.0 V
NOTES: 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2. These ratings give a maximum junction temperature of 85 C and junction-to-case thermal resistance of 300 C/W (derating factor of 33.3 mWr C). Measured at noted irradiance as emitted from a tungsten filament lamp at a color temperature of 2854 K. The effective photosensitive area is typically 1.25 mm' (FPT120A/B) and 0.78 mm' (FPT130AlB). 4. These are values obtained at noted irradiance as emitted from a GaAs source at 900 nm. 5. Measured with radiation flux intensity of less than 0.1 J.'W/cm' over the spectrum from 100-1500 nm. 6. Rise time is defined as the time required for Ie. to rise from 10% to 90% of peak value. Fall time is defined as the time required for Ic;e to decrease from 90% to 10% of peak value. Test conditions are: Vc = 5.0 V. Icc = 4.0 mAo RL = 100 GaAs source. 7. Same electrical characteristics as FPT120 except for ICE'''. 8. Same electrical characteristics as FPT130 except for ICE"'. 9. For product family characteristic curves. refer to Curve Sat FPT120.
n.
3-79
FPT120/A/B/C FPT130/A/B
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note \:I) SYMBOL CHARACTERISTIC ICEIIII Photo Current, Tungsten Source (Note 3) (FPT120) (FPT120A) (Note 7) (FPT120B) (Note 7) (FPT120C) (Note 7) (FPT130) (FPT130A) (Note 8) (FPT130B) (Note 8) MIN TYP MAX UNITS mA 2.0 7.5 10 16 2.0 4.5 6.0 7.5 22.5 20 25 4.5 13.5 12 mA 0.7 0.7 20 0.25 4.5 2.7 50 0.55 V V Ic = 1 mA (pulsed) Ic = 1 mA (pulsed), H = 20 mW/cm 2 VCE = 5.0 V, H = 1 mW/cm 2 TEST CONDITIONS VCE = 5.0 V, H = 5 mW/cm 2
'-
ICEIlII
Photo Current, GaAs Source (Note 4) (FPT120) (FPT130) Collector-to-Emitter Sustaining Voltage (Note 5) Collector-to-Emitter Saturation Voltage, Tungsten Source (Note 3) Light Current Rise Time (Note6) Light Current Fall Time (Note 6)
VCEOlsusl VCElsati
t,
t,
18 18
p's
p.S
3-80
FAIRCHILD
FPT320
High Sensitivity Silicon Phototransistors
Description
The FPT320 is a silicon nitride protected NPN Planar phototransistor with exceptionally stable characteristics and high illumination-sensitivity. The case is made of a special plastic compound with transparent resin encapsulation.
Temperatures
PACKAGE FPT320
Storage Temperature -55 C to 1000 C Operating Temperature -55 C to 85 C Pin Temperature (Soldering, 5 s) 2600 Relative Humdity at 65 C 85%
Power Dissipation (Note 1) Total Dissipation at Tc = 25 C Derate Linearly from 25 C Total Dissipation at TA = 25 Derate Linearly from 25 C Voltages & Current
MIN 0.7 20 0.55 MAX 100 UNITS mA nA V V TEST CONDITIONS
200mW 3.33 mW/oC 100 mW 1.67 mWrC
VCElsus, Ic
Collector to Emitter Voltage Collector Current
20 V 25mA
SYMBOL CHARACTERISTIC Photo Current, GaAs Source (Note 3) ICElltI ICEO VCEOIsus' VCEIsatl Collector Dark Current (Note 4) . Collector to Emitter Sustaining Voltage (Note 4) Collector to Emitter Saturation Voltage, Tungsten Source (Note 2)
= 5.0 V, H = 1 mW/cm 2 VCE = 5.0 V Ie = 1.0 mA (pulsed)

VCE Ic
= 1.0 mA,
= 20 mW/cm2
NOTES: 1. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 2. Measured at noted irradiance as emitted from a tungsten filament lamp at a color temperature of 28540 K. 3. These are values obtained at noted irradiance as emitted from a GaAs source at 99 nm. 4. Measured with radiation flux intensity of less than 0.1 IlW/cm' over the spectrum from 100-1500 nm. 5. Same electrical characteristics as FPT120 except for ICE,",. 6. Same electrical characteristics as FPT130 except for ICE"". 7. For product family characteristic curves, refer to Curve Set FPT120.
3-81
FAIRCHILD
FSA1410M/FSA1411M FSA2002M/FSA2003M
Monolithic Air Isolated Diode Arrays
PACKAGES
C ... 5.0 pF MAX AVF ... 15 mV (MAX) @ 10 mA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Dissipation per Junction at 25C Ambient per Package at 25C Ambient Linear Derating Factor (from 25 C) Junction Package Maximum Voltage and Currents WIV Working Inverse Voltage IF Continuous Forward Current if(surge) Peak Forward Surge Current Pulse Width= 1.0 s Pulse Width = 1.0 ILS For SOIC power dissipation, consult factory. -55C to +200C +150C +260C
FSA1410M FSA1411M FSA2002M FSA2003M
TO-96 TO-96 TO-85 TO-85
400 mW 600 mW 3.2 mW/oC 4.8 mW/oC
55 V 350 rnA 1.0 A 2.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL BV VF CHARACTERISTIC Breakdown Voltage Forward Voltage (Note 3) MIN 60 1.5 1.1 1.0 100 100 5.0 4.0 40 10 50 AVF
NOTES:
1. 2. 3. 4. These ratings are limiting values above which life or satisfactory performance may be impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operation. VF is measured using an 8 rna pulse. For product family characteristic curves and test circuits. refer to Chapter 4, 015.
MAX
UNITS Volts Volts Volts Volts nA p.A pF Volts ns ns ns rnV
TEST CONDITIONS
IR~
10ILA
IF = 500 rnA IF = 200 rnA IF = 100 rnA VR = 40 V VR = 40 V VR
IR C VFM tfr trr
Reverse Current Reverse Current (T A = 150 C) Capacitance Peak Forward Voltage Forward Recovery Time Reverse Recovery Time
= 0, f = 1 MHz If = 500 rnA, t r < 10 ns If = 500 rnA, t r < 10 ns If = Ir = 10-200 rnA RL = 100 n, Ree. to 0.1 Ir If = 500 rnA, Ir = 50 rnA
RL = 100 n, Ree. to 5 rnA IF
Forward Voltage Match
15
= 10 rnA
3-82
FSA 141 OM/FSA 1411 M FSA2002M/FSA2003M
Connection Diagrams
lfffffff+
1 2 3 4 5 6 7 B 9
FSA 1410M
lfffffff+
1 2 3 4 5 6 7 8 9
FSA1411M
ffffffffl
2 3 4 5 6 7 8 9
10
FSA2002M
+fffffffl
2
J
J()
FSA2003M
3-83
FAIRCHILD
FSA2500M/FSA2501 M FSA2501 P/FSA2502M FAS02501

PACKAGES
C ... 5.0 pf (MAX) VF ... 15 mV (MAX) @ 10 rnA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range (M Suffix) (P Suffix) Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Dissipation per Junction at 25 C Ambient Maximum Dissipation per Package at 25 C Ambient Linear Derating Factor (from 25 C) Junction Package Maximum Voltage and Currents WIV Working Inverse Voltage IF Continuous Forward Current if (surge) Peak Forward Surge Current Pulse Width = 1.0 s Pulse width = 1.0 IlS For SOIC power dissipation, consult factory.
-55 C to +200 C -55 C to +150 C +150 C +260 C
FSA2500M FSA2501M FSA2501P FSA2502M FAS02501
TO-85 TO-116-2 TO-116 TO-96 14-S01C
400 mW 650mW 3.2 mW/o C 5.2 mW/o C
50 V 350 rnA 1.0 A 2.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL BV VF CHARACTERISTIC Breakdown Voltage Forward Voltage (Note 3) MIN 60 1.1 1.2 1.5 15 100 200 5.0 40 10 50 MAX UNITS V V V V mV nA /LA pF
RS
TEST CONDITIONS IR = 10 /LA IF = 200 mA IF =300 mA IF = 500 mA IF =10 mA VR = 50 V VR = 50 V, TA = 125 C VR = 0, f = 1.0 MHz If = 500 mA If = Ir = 10 mA to 200 mA RL = 100 0, Irr = 0.1 IR If = 500 mA, Ir = 50 rnA RL = 1000, Irr = 5.0 mA
1!.vF IR
Forward Voltage Match (Note 6) Reverse Current (Note 4) Capacitance (Note 5) Forward Recovery Time (Note 6) Reverse Recovery Time (Note 6)
C
tfr trr
ns ns
NOTES: 1. These ratinge are limiting value. above which life or satisfactory performance may be impaired. 2. Theae are steady state limite. The factory should be consulted on applications involving pulsed or low duty-cycle operation 3. VF tS measured using an 8 rna pulae. 4. See test Circuits (Note 6) for measurement of feverse current of an individual diode. 5. The capacitance ia meaaured from pin-to-pin acroaa anyone of the diodes. The interaction of other diodes is therefore included in the measured value. 6. For product family characteriatlc c.urvea and teat circuita refer to Chapter 4, 015.
3-8.4
FSA2500M/FSA2501 M FSA2501 P/FSA2502M FAS02501
Connection Diagrams
FSA2500M
FSA2501P
FSA2501M FAS02501
FSA2502P
3-85
FAIRCHIL.D
FSA2503M/FSA2503P FSA2504M/FAS02503
C ... 5.0 pF (MAX) ~F ... 15 mV (MAX)@ 10 mA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range (M Suffix) (P Suffix) Maximum Junction Operating Temperature Lead Temperature -55C to +200C -55C to +150C +150C +260C
CONNECTION DIAGRAM
Power Dissipation (Note 2) Maximum Dissipation per Junction at 25C Ambient Maximum Dissipation per Package at 25C Ambient Linear Derating Factor (from 25C) Junction Package Maximum Voltage and Currents WIV Working Inverse Voltage IF Continuous Forward Current if (surge) Peak Forward Surge Current Pulse Width= 1.0 s Pulse Width= 1.0 IlS For sOle power dissipation, consult factory.
400 mW 650 mW 3.2 mW/oC 5.2 mW/oC
50 V 350 rnA 1.0 A 2.0 A
PACKAGES FSA2503M FSA2503P FSA2504M FAS02503
TO-116-2 TO-116 TO-86 14-S01C
ELECTRICAL CHARACTERISTICS (25'C Ambient Temperature unless otherwise noted) SYMBOL BV VF CHARACTERISTIC Breakdown Voltage Forward Voltage (Note 3) MIN 60 1.0 1.1 1.5 15 100 200 5.0 40 10 50
NOTES:
1. 2. 3. 4. S. 6, These ratings are limiting values above which life or satisfactory performance may be impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duly-cycle operation. VF is measured using an B rns pulse. See test 'circuits (Note 6) for measurement of reverse current of an individual diode. The capacitance is measured from pin-to-pin across anyone of the'diodes, The interaction of other diodes is therefore included in the measured value, For product family characteristics and test circuits, refar toChapter4-015, '
MAX
UNITS V V V V mV nA )J,A pF os os os
TEST CONDITIONS IR = 10llA IF = 100 mA IF = 200 mA IF = 500 mA IF = 10 mA VR = 50 V VR = 50 V, TA = 125C VR = 0, 1=1.0 MHz If = 500 mA If = Ir = 10 mA to 200 rnA RL = 100 n, Irr = 0.1 IR If = 500 mA, Ir = 50 rnA RL = 100 n, Irr = 5.0 rnA
~VF
Forward Voltage Match (Note 6) Reverse Current (Note 4) Capacitance (Note 5) Forward Recovery Time (Nole 6) Reverse Recovery Time (Nole 6)
IR C tfr Irr
3-86
FAIRCHILD
FSA2509M/FSA2509P FSA251 OM/FSA251 OP FAS02509lFAS02510

PACKAGES
C ... 5.0 pF (MAX) tJ.VF ... 15 mV (MAX)@ 10 mA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range (M Suffix) (P Suffix) Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Dissipation per Junction at 25C Ambient Maximum Dissipation per Package at 25C Ambient Linear Derating factor (from 25 C) Junction Package Maximum Voltage and Currents WIV Working Inverse Voltage IF Continuous Forward Current if(surge) Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 IlS For SOIC power dissipation, consult factory. -55C to +200C -55C to +150C +150C +260C
FSA2509M FSA2509P FSA2510M FSA2510P FAS02509 FAS02510
TO-116-1 TO-116 TO-116-2 TO-116 14-S01C 14-S01C
400mW 650mW 3.2 mW/C
5.2 mW/C
40V 350mA 1.0 A 2.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL BV VF CHARACTERISTIC Breakdown Voltage Forward Voltage (Note 3) MIN 60 1.0 1.1 1.3 15 100 200 5.0 40 10 50 MAX UNITS V V V V mV nA IJ.A pF ns ns ns TEST CONDITIONS IR IF IF IF IF
= 10llA = 100mA = 200 mA
=500 mA
tJ.VF .lR C tfr trr
Forward Voltage Match (Note 6) Reverse Current (Note 4) Capacitance (Note 5) Forward Recovery Time (Note 6) Reverse Recovery Time (Note 6)
= 10 mA VR = 40 V VR = 40 V, TA = 150C VR = 0, f = 1.0 MHz

If = 500 mA If = Ir = 10 mA to 200 mA RL = 100 n, Irr = 0.1 IR If = 500 mA, Ir = 50 mA RL = 100 n, Irr = 5.0 mA
NOTES: 1. Thea. ratingl are limiting values above which lif. or satisfactory performance may be impaired. 2. Theae are steady atate limits. The factory should be consulted on applications involving pulled or low duty-cycle operation. 3. VF Is mealured uaing an 8 rna pul.e. ... Saa te.t circuits (Nota 8) for mea.urament of rever current of an individual diode. 5. The capabitance 18 meaBured from pln-to-pln acr088 any on8 of the diodes~ The interaction of other diodes is therefore Included in the measured value. 6. For product family characteristic curve8 and teat circuits, refer to Chapter 4, 015.
3-87
FSA2509M/FSA2509P FSA2510M/FSA2510P FAS02509/FAS02510
Connection Diagrams
14
FSA2509M FAS02509
FSA2509P
FSA2510M FAS02510
FSA2510P
3-,88
FAIRCHILD

C ... 3.0 pI (max) VF ... 15 mV (max)@ 10 mA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range (M Suffix) (P Suffix) Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Dissipation per Junction at 25C Ambient Maximum Dissipation per Package at 25C Ambient Linear Derating Factor (from 25 C) Junction Package Maximum Voltage and Currents WIV Working Inverse Voltage IF Continuous Forward Current if (surge) Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 /-IS For SOIC power dissipation, consult factory. -55C to +200C -55C to + 150C +150C +260C
FSA2563M/2564M/2565M FSA2566M/FSA2563P FSA2564P/2565P/2566P FAS02563/2564 12565/2566

PACKAGES FSA2563M FSA2564M FSA2565M FSA2566M FSA2563P FSA2564P FSA2565P FSA2566P FAS02563 FAS02564 FAS02565 FAS02566 TO-116-2 TO-116-2 TO-68 TO-68 TO-116 TO-116 TO-98 TO-98 14-S01C 14-S01C 16-S01C 16-S01C
400 mW 650 mW 3.2 mW/oC 5.2 mW/oC
40 V 350 mA 1.0 A 2.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL BV VF CHARACTERISTIC Breakdown Voltage Forward Voltage (Note 3) MIN 60 1.0 1.1 1.3 100 100
4
MAX
UNITS V V V V nA /-I A pF V ns ns ns mV
TEST CONDITIONS IR IF IF IF
IR C VFM t'r trr
Reverse Current (Note 4) Capacitance (Note 5) Peak Forward Voltage (Note 6) Forward Recovery Time (Note 6) Reverse Recovery Time (Note 6)
4 40 10 50
= 10/-IA = 100 rnA = 200 rnA = 500 rnA VR = 40 V VR = 40 V, TA = 125C VR = 0 V, f = 1 MHz IF = 500 rnA I, = 500 rnA If = Ir = 10 rnA to 200 rnA RL = 1000, Irr = 0.1 Ir I, = 500 rnA, Ir = 50 rnA
t:"yF
NOTES:
Forward Voltage Match (Note 6)
15
= 1000, Irr = 5 rnA IF = 10 rnA

RL
1. Theae ratlnga 8r. limiting value. above which lif. or satisfactory performance may be impaired. 2. The are steady atate limite. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. VF ia mealured uling an 8 III pula . 4. Sea t t circuits (Note 8) for measurement of reverae current of an individual diode.
5. The capacitance 18 measured from pin-ta-pin acrOl1 sny one of the diodel. The interaction of other diodes is therefore included in the mealured value. 8. For product family characteristic curvel and test circuit8, refer to Chapter 4,015.
3-89
FSA2563M/2564M/2565M FSA2566M/FSA2563P FSA2564P12565P12566P FAS02563/2564 FAS02565/2566

Connection Diagrams
FSA2563M FAS02563
FSA2563P
\\m
9 10
11
12
14
FSA2564M FAS02564
FSA2564P
FSA2565M FAS02565
FSA2565P
FSA2566M FAS02566
FSA2566P
3-90
FAIRCHILD
FSA2619M/2620M/2621 M FSA2619P/2620P FAS02619/20 FSA2719M/2720M/2721 M FSA2719P/2720P FAS02719/20

PACKAGES
C ... 2.0 pf (max) FSA2719 Series t:..vF ... 15 mV (max) @ 10 mA ABSOLUTE MAXIMUM RATINGS (Notes 1 and 5) Temperatures Storage Temperature Range (M Suffix) (P Suffix) Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Dissipation per Junction at 25 C Ambient Maximum Dissipation per Package at 25 C Ambient Linear Derating factor (from 25 C) Junction Package Maximum Voltage and Currents WIV Working Inverse Voltage FSA2619 (Note 5) FSA2719 Continuous Forward Current IF Peak Forward Surge Current if (surge) Pulse Width = 1.0 s Pulse Width = 1.0 /-IS For SOIC power dissipation, consult factory. -55 C to +200 C -55 C to +150 C +150 C +260 C
400mW 650 mW 3.2 mW/oC 5.2 mW/oC
FSA2619M FSA2719M FSA2619P FSA2719P FSA2620M FSA2720M FSA2620P FSA2720P FSA2621M FSA2721M FAS02619 FAS02620 FAS02719 FAS02720
68 (Ceramic DIP) 68 (Ceramic DIP) 98 (Plastic DIP) 98 (Plastic DIP) TO-116-2 TCH16-2 TO-116 TO-116 TO-86 TO-86 16-S01C 14-S01C 16-S01C 14-S01C
75 V 50 V 350 mA 1.0 A 2.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL BV IR CHARACTERISTIC Breakdown Voltage (Note 5) Reverse Current FSA2719 FSA2619 FSA2619 MIN 75 100 5.0 25 50 100 100 1.0 FSA2619 FSA2719 FSA2619 FSA2719 5.0 6.0 4.0 4.0 15 FSA2619 FSA2719 45 20 3.0 MAX UNITS V V JlA nA JlA nA JlA V ns ns pF pF mV ns V
%
TEST CONDITIONS IR = 5.0 JlA IR = l00JlA VR VR VR VR VR
FSA2719 VF trr C IJ"yF tlr VFM RE

NOTES.
Forward Voltage (Note 3) Reverse Recovery Time (Note 6) Capacitance (Note 6) Forward Voltage Match (Note 6) Forward Recovery Time (Note 6) Peak Forward Voltage (Note 6) Rectilication Efficiency
= 75 V = 20 V = 20V, TA = 150 C = 50 V = 50 V, TA = 150 C IF = 10 rnA

VR = 0 VR = 0 IF
I, = Ir = 10 rnA, Irr = 1.0 rnA I, = Ir = 10 mA,lrr = 1.0 rnA
= 10 rnA
50 rnA Peak square wave, 0.1 JlS Pulse Width, 5.0 kHz. 100 kHz
= 100 rnA, tr:S 10 ns V, = 2 V r.m.s. I = 100 MHz

IF
I. The.e ratings are limiting values above which life or satisfactory performance may be impaired. 2. The,e are ateady state limits. The factory should be consulted or applications involving pulsed or low duty-cycle operation. 3. VF i8 mealured uling an 8 ma pulae. 4. See te.t circuits (Note 8) for measurement of reverae current of an individual diode. 5. FSA2819 denoles series FSA26l9MIP, FSA2620MIP and FSA2621M; FSA2719 denotea eerie. FSA27l9MIP. FSA2720MIP and FSA2721M. 8. For product family characteristics curve. and te.t circuita, refer to Chapter 4, 016.
3-91
FSA2619M/2620M/2621 M FSA2619P/2620P FSA2719M/2720M/2721 M FSA2719P12720P FAS02619/2620 FAS02719/2720

Connection Diagrams
8 7 8 5 432 1
ffffffff
9
10 11 12 13 14 15 16
FSA2619 FAS02619
FSA2719 FAS02719
7854321.
fffffff
8
9 10 11 12 13 14
FSA2620 FSA2720 FAS02620
FSA2621 FSA2721 FAS02720
3-92
FAIRCHILO'
FSA2702M/FSA2703M FSA2704M/FSA2705M
t.VF ... 3 mV (MAX) FSA2702M, FSA2703M t.IR ... 1 /LA (MAX) FSA2702M, FSA2703M
CONNECTION DIAGRAM
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Dissipation Linear Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage IF Continuous Forward Current if Recurrent Peak Forward Current if (surge) Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 /LS -55C to +200C 175C +260C
1
Q
'.(.~.
6
3
500mW 3.33 mW/oC
40 V 300mA 600mA
1.0 A
4.0 A
PACKAGE FSA2702M FSA2703M FSA2704M FSA2705M
TO-33 TO-33
TO-72
TO-72
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL BV IR C VF CHARACTERISTIC Breakdown Voltage Reverse Current (Note 4) Capacitance (Note 5) Forward Voltage (Note 3) MIN 60 100 100 4.0 1.000 .920 .850 .780 .740 .700 .650 .620 6.0 10, 3.0, MAX UNITS V nA /LA pF V V V V V V V V ns ns mV TEST CONDITIONS IR = 100/LA VR = 40 V VR=40 V, TA = 150C VR = 0 IF IF IF IF IF IF IF IF If If = 200 rnA = 100 rnA = 50 rnA = 20 rnA = 10 rnA = 5.0 rnA = 2.0 rnA = 1.0 rnA
trr t.Vf
Reverse Recovery Time (Note 6) Forward Voltage Match (Note 6) FSA2702,FSA2703 Reverse Current Match (Note 6) FSA2702, FSA2703
= Ir = 10 rnA, Irr = 1.0 rnA = Ir = 200 rnA, Irr = 20 rnA
IF = 10 /LA to 10 rnA TA = -55C to +100C VR = 10 V, TA = -55C to + 100C
t.IR
1.0
/LA
NOTES: 1. The.e ratings are limiting values above which life or satisfactory performance may be impaired. 2. The.a are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. VF is measured using an 8 rna pulae. 4. See tt circuits (Note 6) for measurement of reverse current of an individual diode. 5. The capacitance i8 measured from pin-to-pin acr088 anyone of the diodes. The.interaction of other diodes is therefore included in the measured value. 6. For product family characteristic curves and teat circuits, refer to Chapter 4, 015.
3-93
FAIRCHIL.O
MPS2924/FTS02924
NPN Small Signal General Purpose Amplifier
VCEO. 25 V (Min)
h FE
...
150-300 @ 2.0 mA
PACKAGE MPS2924 FTS02924
TO-92 TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 250 C Ambient Temperature 70 0 C Ambient Temperature 25 0 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
-550 C to 150 0 C 1500 C
MPS 0.625 W 0.400 W 1.0W
FTSO 0.350 W
25 V 25 V 5.0 V 100 mA
ELECTRICAL CHARACTERISTICS (25 0 C Ambient Temperature unless otherwise noted) (Note 5) SYMBOL ICBo lEBO h,. Cob CHARACTERISTIC Collector Cutoff Current Emitter Cutoff Current Small Signal Current Gain Output Capacitance 150 MIN MAX 500 15 500 300 12 pF UNITS nA J.lA nA VCB VCB TEST CONDITIONS
= 25 V, IE = 0 = 25 V, IE = 0, TA = 100 VEB = 5.0 V, Ic = 0 VCE = 10 V, Ic = 2.0 mA, f = 1.0 kHz VCB = 10 V, IE = 0, f = 1.0 MHz
0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125C/W (derating factor of 8.0 mW/ o C); junction-ta-ambient thermal resistance of 200 0 C/W (derating factor of 5.0 mW;o C); (TO-236) junction-ta-ambient thermal resistance of 35r C/W (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. For product family characteristic curves, refer to Curve Set T144. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-94
FAIRCHILD
MPS33921FTS03392 MPS3393/FTS03393
NPN Small Signal General Purpose Amplifiers
VCEO ... 25 V (Min) hFE ... 150-300 (MPS/FTS03392), 90-180 (MPS/FTS03393)
PACKAGE
MPS3392 MPS3393 FTS03392 FTS03393 TO-92 TO-92 TO-236AAI AB TO-236AAI AB
@2.0mA Complements ... 2N4125, 2N4126

Storage Temperature Operating Junction Temperature -55 to 150' C 150C
Power Dissipation (Notes 2 & 3)

Total 25 C 70 C 25 C Dissipation at Ambient Temperature Ambient Temperature Case Temperature
MPS
0.625 W 0.400 W 1.0W
FTSO
0.350 W
UNITS V 100 100 nA nA pF TEST CONDITIONS Ic = 1.0 mA, IB = 0 VEB = 5.0 V, Ic = 0 VCB = 18 V, IE = 0 Ic = 2.0 mA, VCE = 4.5 V VCB = 10V, IE =0, f=1.0MHz Ic = 2.0 mA, VCE = 4.5 V, f=1.0kHz
Voltages & Currents

VCEO VCBO VEBO Ic Collector to Emitter Voltage (Note 4) Collector to Base Voltage Emitter to Base Voltage Collector Current 25 V 25 V 5.0 V 100 mA

SYMBOL BVCEO lEBO ICBO hFE CHARACTERISTIC Collector to Emitter Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain (Note 5) Output Capacitance Small Signal Current Gain 150 150 3392 MIN MAX 25 100 100 300 3.5 500 90 90 3393 MIN MAX 25
180 3.5 400
Cob
h'e
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" and (T0-92) junction-to-case thermal resistance of 1250 elW (derating factor of 8.0 mW/o e); junction-to-ambient thermal resistance of 200" e/W (derating factor of 5.0 mW/o e); (T0-236) junction-to-ambient thermal resistance of. 357 0 elW (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ItS; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T144.
3-95
FAIRCHILD
MPS3702lFTS03702 MPS3703/FTS03703
PNP Small Signal General Purpose Amplifier
PACKAGE MPS3702 MPS3703 FTS03702 FTS03703
hFE .
VeEO ... -30 V (Min) (MPS/FTS03703) 60-300 @ 50 mA (MPS/FTS03702) VeE!Sa!) ... -0.25 V (Max) @ 50 mA Complements ... MPS/FTS03704, MPS/FTS03705
TO-92 TO-92 TO-236AAI AB TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (MPS3702, MPS3703} (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 70 C Ambient Temperature 25 0 C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VeBO Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current
-55 C to 150 0 C 150C
MPS 0.625 W 0.400 W 1.0 W 3702 -25 V

-40 V -5.0 V 200mA
FTSO 0.350 W'
UNITS V V V 100 100 nA nA Ie Ie IE TEST CONDITIONS
3703 -30 V
-50 V -5.0 V 200 mA

SYMBOL BVeEo BVeBo BVEBo leBO lEBO CHARACTERISTIC 3702 MIN MAX 3703 MIN MAX -30 -50 -5.0 100 100
Collector to Emitter Breakdown -25 Voltage (Note 5) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current -40 -5.0
= 10 mA, = 100 jJ.A, = 100 jJ.A,
IB IE Ie
=0 =0 =0
VCB VEB
= -20 V, IE = 0 = -3.0 V, Ic = 0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 C and (TO-92) junction-to-case thermal resistance of 125 ClW (derating factor of 8.0 mWfOC); junction-to-ambient thermal resistance of 200C/W (derating factor of 5.0 mWrC); (TO-236) junction-to-ambient thermal resistance of 357 CIW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 /JS; duty cycle = 10/0. 6. For product family characteristic curves, refer to Curve Set T212. Package mounted on 99.5% alumina 8 mrn x 8 mm x 0.6 rnm.
3-97
MPS3702lFTS03702 MPS3703/FTS03703
3702
SYMBOL hFE VeE1S "!) VSEION) CHARACTERISTIC DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 5) MIN MAX
3703
MIN MAX UNITS V V MHz TEST CONDITIONS Ie = 50 mA, VeE = -5.0 V Ie = 50 mA, Is = 5.0 mA Ie = 50 mA, VeE = -5.0 V Ie = 50 mA, VeE = --5.0 V, f = 20 MHz Ves = -10 V, f = 1.0 MHz
60
300 --0.25
30
150 --0.25
-0.6
-1.0
-0.6 100
-1.0
fr
Cob
Current Gain Bandwidth Product 100 Output Capacitance
12
12
pF
3-98
FAIRCHILD
MPS3704/FTS03704 MPS370S/FTS0370S
VCEO ... 30 V (Min) hFE ... 100-300 @ 50 mA (MPS/FTS03704) VCElsatl ... -0.6 V (Max) @ 100 mA (MPS/FTS03704) Complements ... MPS/FTS03702, MPS/FTS03703
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 70 C Ambient Temperature 25C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
-55 C to 150C 150C
MPS 0.625 W 0.400 W 1.0W
FTSO 0.350 W'
UNITS V V V 100 100 nA nA TEST CONDITIONS Ic = 10 mA, IE = 0 Ic = 100 !lA, IE = 0 IE=100 !lA,lc=0 VeB = 20 V, IE = 0 VEB = 3.0 V, Ic = 0 Ic = 50 mA, VCE = 2.0 V
30V 50 V 5.0 V 600 mA
SYMBOL . CHARACTERISTIC BVcEo BVcBo BVEBO ICBO lEBO hFE Collector to Emitter Breakdown Voltage (Note 5) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 5)
3704 MIN MAX 30 50 5.0 100 100 100 300
3705 MIN MAX 30 50 5.0
50
150
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum iunction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125C/W (derating factor of 8.0 mW/oC); junction-to-ambient thermal resistance of 200C/W (derating factor of 5.0 mW/C); (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 !'8; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-99
MPS3704/FTS03704 MPS370S/FTS0370S

SYMBOL CHARACTERISTIC Collector to Emitter Saturation VeElsalJ Voltage (Note 5) VSEIONI Base to Emitter "On" Voltage (Note 5) 3704 MIN MAX 0.6 0.5 1.0 3705 MIN MAX 0.8 0.5 100 12 12 1.0 UNITS V V MHz pF TEST CONDITIONS Ie = 100 mA, Is = 5.0 mA Ie = 100 mA, VeE = 2.0 V Ie = 50 mA, VeE = 2.0 V, f = 20 MHz Ves = 10 V, IE =0, f= 1.OMHz
h
Cob
Current Gain Bandwidth Product 100 Output Capacitance .
3-100
FAIRCHILD
A Schlumberqer Company
MPS51721FTS05172
hFE ... 100-500 @ Ic = 10 mA VCE!Satl ... 0.25 V (Max) @ Ic = 10 mA
PACKAGE
MPS5172 FTS05172 TO-92
Complements ... 2N4126, FTS04126
TO-236AAI AB


Total 25 C 70 C 25 C Dissipation at Ambient Temperature Ambient Temperature Case Tem perature
MPS
0.625 W 0.400 W 1.0W
FTSO
0.350 W*
UNITS V nA nA /LA nA TEST CONDITIONS Ic = 10 mA, IB = 0 VCE = 25 V, VBE = 0 VCB = 25 V, IE = 0 VCB = 25 V, IE = 01, TA = 100C VBE = 5.0 V, Ic = 0 Ic = 10 mA, VCE = 10 V V V pF Ic=10mA,IB=1.0mA Ic = 10 mA, VCE = 10 V VCB = 0, IE = 0, f = 1.0 MHz Ic = 10 mA, VCE = 10 V, f = 1.0 kHz
Voltages & Currents

VCEO VCBO VEBO Ic Collector to Emitter Voltage (Note 4) Collector to Base Voltage Emitter to Base Voltage Collector Current 25 V 25 V 5.0 V 100 mA

SYMBOL BVCEO ICEs ICBO lEBo hFE VCE!sati VBE!ONJ Ccb h,. CHARACTERISTIC Collector to Emitter Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage Collector to Base Capacitance Small Signal Current Gain 0.5 1.6 100 100 MIN 25 100 100 10 100 500 0.25 1.2 10 750 MAX
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mWr C); junction-to-ambient thermal resistance of 200C/W (derating factor of 5.0 mW/o C); (TO-236) junction-to-ambient thermal resistance of 35r CIW (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length 0 300 !,s; duty cycle 0 1%. 6. For product family characteristic curves, refer to Curve Set T144.
Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-101
FAIRCHIL.D
MPS6514/FTS06514 MPS6515/FTS06515
VCEO ... 25 V (Min) hFE ... 150-300 (MPS/FTS06514), 250-500 (MPS/FTS06515) @2.0mA hFE ... 90 (Min) (MPS/FTS06514), 150 (Min) (MPS/FTS06515) @ 100 rnA
TO-92 TO-92
TO-236AAI AB TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 70 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) Vcso Collector to Base Voltage VEBO Emitter to Base Voltage Collector Current Ic
-55 C to 150 C 150 C
MPS 0.625 W 0.400 W 1.0 W
FTSO 0.350 W*
25 V 40 V 4.0 V 100 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVcEo BVEso leso hFE VeElsAn COb CHARACTERISTIC Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Output Capacitance 150 90 6514 MIN MAX 30 4.0 50 1.0 300 0.5 3.5 250 150 6515 MIN MAX 30 4.0 50 1.0 500 0.5 3.5 V pF UNITS V V nA IJ.A TEST CONDITIONS
Ie = 0.5 mA, Is = 0
IE=100IJ.A,Ic=0 VCB = 30 V, IE = 0 Vcs=30V,IE=0,TA=60C Ie = 2.0 mA, VCE = 10 V Ic = 100 rnA, VCE = 10 V Ic = 50 mA, Is = 5.0 mA Vcs =10V,IE=0,f=100kHz
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3 These ratinQs give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mWfO C); junction-to-ambient thermal resistance of 200CIW (derating factor of 5.0 mWfO C); (TO-236) junction-to-ambient thermal resistance of 357 CIW (derating factor of 2.8 mWfOC). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length 0 300 "s; duty cycle" 1%. 6. For product family characteristic curves, refer to Curve Set T144 for MPS6514 & T-155 for MPS6515. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-102
F=AIRCHILD
MPS6518/FTS06518
VCEO ... 40 V (Min) h FE ... 150-300 @ 2.0 rnA, 90 (Min) @ 100 rnA
TO-92 TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 250 C Ambient Temperature 700 C Ambient Temperature 250 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
-550 C to 150" C 1500 C
MPS 0.625 W 0.400 W 1.0 W
FTSO 0.350 W*
UNITS V V TEST CONDITIONS Ic = 0.5 rnA, IB = 0 IE = 10 /l A. Ie = 0 VCB = -30 V, IE = 0 VCB = -30 V, IE = 0, TA = 60"C Ic = 2.0 mA, VCE = -10 V Ic = 100 mA, VCE = -10 V V pF Ic = 50 mA, IB = 5.0 mA VcB =-10V,IE =0,f=100kHz
-40 V -40 V -4.0 V 100 mA
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVcEo BVEBo ICBO hFE
VCE{satl
MIN Collector to Emitter Breakdown Voltage -40 -4.0
MAX
Emitter to Base Breakdown Voltage Collector Cutoff Current DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Output Capacitance
50 1.0 150 90 300 -0.5 4.0
nA /lA
COb
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-ta-case thermal resistance of 1250 CNI/ (derating factor of 8.0 mWr C); junction-to-ambient thermal resistance of 2000 CIW (derating factor of 5.0 mWr C); (TO-236) junction-to-ambient thermal resistance of 3570 C/W (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 MS; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T215. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-103
FAIRCHILO
MPS6520/FTS06520 MPS6521/FTS06521
VCEO ... 25 V (Min) hFE ... 100 (Min) (MPS/FTS06520), 150 (Min) (MPS/FTS06521) @ 100 J1.A hFE ... 200-400 (MPS/FTS06520), 300-600 (MPS/FTS06521) @2.0mA NF ... 3.0 dB (Max) @ Ic = 10 J1.A, Wide Band
TO-92 TO-92
-55 C to 150 C 150 C
MPS 0.625 W 0.400 W 1.0 W
FTSO 0.350 W*
25 V 40 V 4.0 V 100 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVcEo BVEBo ICBO CHARACTERISTIC Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current 6520 MIN MAX 25 4.0 50 1.0 6521 MIN MAX 25 4.0 50 1.0 UNITS V V nA J1.A Ic IE TEST CONDITIONS
= 0.5 mA, = 10 J1.A,
IB
=0
Ic
=0 =0 = 0,
Vce = 30 V, IE Vce = 30 V, IE TA = 60C
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duly cycle operations. 3. These ratings give a maximum junction temperature of 150"C and (TO-92) junction-to-case thermal resistance of 125"C/W (derating factor of 8.0 mWr C); junction-lo-ambient thermal resistance of 200" C/W (derating factor of 5.0 mWr C); (TO-236) junction-to-ambient thermal resistance of 357" C/W (derating factor of 2.8 mWr C). 4. Rating refers to a high current pOint where collector to emitter VOltage is lowest. 5. Pulse conditions: length 0300 ,.,s; duty cycle 0 1%. 6. For product family characteristic curves. refer to Curve Set T144. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-104
MPS6520/FTS06520 MPS6521/FTS06521

SYMBOL hFE VCEIs." Cob NF CHARACTERISTIC DC Current Gain Collector to Emitter Saturation Voltage (Note 5) Output Capacitance Noise Figure 6520 MIN MAX 100 200 400 0.5 3.5 3.0 6521 MIN MAX 150 300 600 0.5 3.5 3.0 V pF dB UNITS TEST CONDITIONS Ic = 100 !lA, VCE = 10 V Ic = 2.0 mA, VCE = 10 V Ic = 50 mA, Is = 5.0 mA Vcs = 10 V, IE = 0, f = 100 kHz VCE = 5.0 V, Ic = 10 !lA, Rg = 10 kil, Power Bandwidth 15.7 kHz, 3.0 dB pts @ 10 Hz & 10 kHz
3-105
FAIRCHILO
MPS6535M
Po 625 mW@ TA = 25C VCEO ... -30 V (Min) hFE ... 30 (Min) @ 100 rnA
PACKAGE MPS6535M
TO-92

Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 70 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
-55 C to 150 C 150C
0.625 W 0.400 W 1.0 W
-30 V -30 V -4.0 V 600 mA
SYMBOL CHARACTERISTIC BVcEo BVcBo BVEBo leBO hFE

VCE(satl
MIN Collector to Emitter Breakdown Voltage -30 Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current DC Current Gain (Note 5) Collector Saturation Voltage (Note 5) Base Saturation Voltage (Note 5) Output Capacitance 30 -30 --4.0
MAX
UNITS V V V Ic
TEST CONDITIONS
100 5.0 -0.5 -1.2 8.0
nA IlA V V pF
= 10 mA, IB = 0 Ic = 10 IlA, IE = 0 IE = 10 IlA, Ic = 0 VCB = -20 V, IE = 0 VCB = -20 V, IE = 0, TA = 60C Ic = 100 mA, VCE = -1.0 V
Ic = 100 mA, IB = 10 mA Ic = 100 mA, IB = 10 mA VcB =-10V,IE =0,f=100kHz
VSE(Sall
COb
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125C/W (derating factor of 8.0 mW;o C); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S; duty cycle = 2%. 6. For product family characteristic curves. refer to Curve Set T202.
3-106
FAIRCHILD
MPS6560/FTS06560 MPS6561/FTS06561 MPS65621FTS06562
NPN-PNP Small Signal General Purpose Complementary Amplifiers

PACKAGE MPS6560 MPS6561 MPS6562 FTS06560 FTS06561 FTS06562 TO-92 TO-92 TO-92 TO-236AA/ AB TO-236AAI AB TO-236AAI AB
VCEO .. MPS/FTS06560/2), 20 v (MPS/FTS06561) hFE ... 50-200 @ 500 mA (MPS/FTS06560/2), @ 350 mA (MPS/FTS06561) VCE<satl ... 0.5 V (Max) @ 500 mA (MPS/FTS06560/2), @ 350 mA (MPS/FTS06561) Complements ... MPS/FTS06560, MPS/FTS06561 (NPN); MPS/FTS06562 (PNP)
ABSOLUTE MAXIMUM RATIN GS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 70 C Ambient Temperature 25 0 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
II
FTSO 0.350 W*
-55 0 C to 1500 C 150 0 C
MPS 0.625 W OAOO W 1.0W
6560/62 25 V
25 V 4.0 V 600 mA
6561 20V 20 V 4.0 V 600 mA
6560/62
SYMBOL BVEBO ICEO ICBO lEBO CHARACTERISTIC Emitter to Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Cu rrent MIN 5.0 100 MAX
6561 MIN MAX

~5.0
UNITS V nA nA nA nA
TEST CONDITIONS IE=100fLA,lc=0 VCE = 25 V, IB = 0 VCE = 20 V, IB = 0 VCB = 20 V, IE = 0 VEB = 4.0 V, Ie = 0
100 100 100 100 100
NOTES: These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state hm!ts. The factory should be consulted on applications involving pulsed or low duty cycle operations 3 These ratings give a maximum junction temperature of 1500 C and (TO-92) junctlOn-ta-case thermal resistance of 125 0 C/W (derating factor of 8.0 mWr C); junction-to-ambient thermal resistance of 2000 ClW (derating factor of 5.0 mWr C); (TO-236) junction-to-ambient thermal resistance of 357 0 CfW (derating factor of 2.8 mWr C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5 Pulse conditions: length = 300 I's; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T124 for MPS6560. MPS6561 & T12 for MPS6562. Package mounted on 995% alumina 8 mm x 8 mm x 0.6 mm.
3-107
MPS6560/FTS06560 MPS6561/FTS06561 MPS65621FTS06562

SYMBOL CHARACTERISTIC hFE DC Current Gain (Note 5)
6560/62 MIN MAX

35 50 50
6561 MIN MAX 35 50
UNITS Ic Ic Ic Ic V V V V MHz
TEST CONDITIONS =10mA, VCE = 1.0V = 100 mA, VCE = 1.0 V = 500 mA, VCE = 1.0 V = 350 mA, VCE = 1.0 V
200 50 200 -0.5 1.2 -1.2 0.5
VCElsatJ VSEIONI
Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 5) Current Gain Bandwidth Product Output Capacitance
Ic = 500 mA, Is = 50 mA Ic = 350 mA, Is = 35 mA Ic = 500 mA, VCE = 1.0 V Ic = 350 mA, VCE = 1.0 V Ic = 10 mA, VCE = 10 V, f =30 MHz Vcs = 10 V, IE = 0, f = 100 kHz
h
COb
60
30
60 30
pF
3-108
FAIRCHILD
MPS6571/FTS06571
NPN Low Level High Gain Amplifier
VCEO ... -20 V (Min) hFE ... 250-1000 @ 100 MA
TO-92 T0236AA/AB
ABSOLUTE MAXIMUM RATIN GS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 70 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBo Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current (Continuous)
-55C to 150 C 150C
MPS 0.625 W 0.400 W 1.0W
FTSO 0.350 W'
UNITS V V nA nA V TEST CONDITIONS Ic = 1.0 mA, IB = 0 Ic = 100 MA, IE = 0 VCB = 20 V, IE = 0 VEBIOFFI = 3.0 V, Ic = 0 Ic = 100 MA, VCE = 5.0 V Ic =10mA,I B=1.0mA Ic = 10 mA, VCE = 5.0 V Ic = 500 MA, VCE = 5.0 V, f = 20 MHz VCB = 5.0 V, IE = 0, f = 100 kHz
20 V 20 V 3.0 V 50 mA
SYMBOL CHARACTERISTIC MIN BVcEO Collector to Emitter Breakdown Voltage 20 BVcBo ICBO lEBO hFE VCElsatl VBEIONI Collector to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 5) Current Gain Bandwidth Product Output Capacitance 50 250 25
MAX
50 50 1000 0.5 0.8
V
MHz
h
COb
4.5
pF
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-to-case thermal resistance of 1250 ClW (derating factor of 8.0 mWI' C): junction-to-ambient thermal resistance of 200 0 C/W (derating factor of 5.0 mW;o C): (TO-236) junction-to-ambient thermal resistance of 357 0 C/W (derati ng factor of 2.8 m WI' C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I's: duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T144. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-109
FAIRCHILD
A Schlumberger Compan'y
MPSAOS/FTSOA05 MPSAOS/FTSOA06
VCEo ... 60 V (Min) (MPS/FTSOAOS), 80 V (Min) (MPS/FTSOA06) h FE SO (Min) @ 10 mA and 100 mA VCE(satl . 0.2S V (Max) @ 100 mA Complements ... MPS/FTSOASS, MPS/FTSOAS6, (PNP)
PACKAGE MPSA05 MPSA06 FTSOA05 FTSOA06
-55 C to 150 C 150C
MPS 0.625 W 0.400 W 1.0 W AOS 60 V
FTSO 0.350 W'
A06 80 V
60V 4.0 V 500 mA
80 V 4.0 V 500 mA
SYMBOL CHARACTERISTIC BVcEO BVEBo ICBO Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current
A05 MIN MAX 60 4.0 100
A06 MIN MAX 80 4.0
UNITS V V nA nA Ic IE
TEST CONDITIONS
= 1.0 mA, = 100 JJ.A, = 60 V, = 80 V,
IB Ic IE IE
=0 =0
100
VCB VCB
=0 =0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-to-case thermal resistance of 1250 ClW (derating factor of B.O mW/O C); junction-to-ambient thermal resistance of 2000 C/W (derating factor of 5.0 mWfO C); (TO-236) junction-to-ambient thermal resistance of 357 0 CfW (derating factor of 2.8 mWfO C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length 0 300 /JS; duty cycle 0 1%. 6. For product family characteristic curves, refer to Curve Set T149. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-110
MPSAOS/FTSOAOS MPSA06/FTSOA06

SYMBOL CHARACTERISTIC hFE VeElsat) VeEION) DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage Current Gain Bandwidth Product 50 A05 MIN MAX 50 50 0.25 1.2 50 A06 MIN MAX 50 50 0.25 1.2 V V MHz UNITS TEST CONDITIONS Ie = 100 rnA, VeE = 1.0 V Ie = 10 rnA, VeE = 1.0 V Ie = 100 rnA, Ie = 10 rnA Ie = 100 rnA, VeE = 1.0 V Ie = 100 rnA, VeE = 1.0 V, f = 100 MHz
3-111
FAIRCHIL.D
MPSA10
NPN Amplifier Transistor
VeEo ... 40 V (Min)
PACKAGE MPSA10
TO-92
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VeEO Collector to Emitter Voltage (Note 4) VEBO Emitter to Base Voltage Ie Collector Current (Peak)
-55 C to 150 C 150C
0.625 W 1.0 W
40 V 4.0V 100 mA
SYMBOL CHARACTERISTIC BVeEo BVEBo leBo hFE Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current DC Current Gain (Note 5) Current Gain Bandwidth Product Output Capacitance
MIN 40 4.0
MAX
UNITS V V
TEST CONDITIONS Ie = 1.0 mA, IB = 0 IE = 100 MA, Ie = 0 VeB = 30 V, IE = 0 Ie =

5.0~,
100 40 125 4.0 400
nA MHz pF
VeE = 10 V
h
Cobo
Ie = 5.0 mA, VeE = 10 V, f= 100 MHz VeB = 10 V, IE = 0, f = 100 MHz
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and junction-to-case thermal resistance of 125C/W (derating factor of 8.0 mW/C); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length: 300 ~s; duty cycle: 1%. 6. For product family characteristic curves, refer to Curve Set T144.
3-112
F=AIRCHIL.O
MPSA121FTSOA12
NPN Monolithic Darlington Amplifiers
VCEO ... 20 V (Min) hFE ... 20,000 (Min) @ 10 rnA
PACKAGE MPSA12 FTSOA12
TO-92 TO-236AA/AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature 70 0 C Ambient Temperature 250 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VEBO Emitter to Base Voltage
-55 0 C to 1500 C 150 0 C
MPS 0.625 W 0.400 W 1.0W
FTSO 0.350 W'
20 V 10 V
ELECTRICAL CHARACTERISTICS (25 0 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVcEs Iceo lEBO ICES hFE VCE(sati VBE(ONI Collector to Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Reverse Current DC Pulse Current Gain (Note 5) Collector to Emitter Saturation Voltage Base to Emitter "On" Voltage 20,000 1.0 1.4 V V MIN 20 100 100 100 MAX UNITS V nA nA nA TEST CONDITIONS Ic = 100 jJ.A, Ie = 0 Vce = 15 V, Ic = 0 VEe = 10 V, Ic = 0 VCE=15V,VeE =0 Ic = 10 mA, VCE = 5.0 V Ic = 10 rnA, Ie = 0.01 mA Ic = 10 mA, VCE = 5.0 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125C/W (derating factor of 8.0 mW/oC); junction-to-ambient thermal resistance of 200C/W (derating factor of 5.0 mW/oC); (TO-236) junction-Io-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/o C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S; duty cycle = 1%. 6. For product family characteristic curves. refer to Curve Set T164. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-113
FAIRCHIL.D
MPSA13/FTSOA13 MPSA14/FTSOA14
NPN Monolithic Darlington Amplifiers
VCEO ... 30 V (Min) h FE ... 20,000 (Min) @ 10.0 mA (MPS/FTSOA14)
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 70 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCES Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
-55 C to 150 C 150C
MPS 0.625 W 0.400 W 1.0 W
FTSO 0.350 W*
30 V
30V
50 V 10 V 300 mA

SYMBOL CHARACTERISTIC BVcEs ICBO lEBO hFE VCEtsatl VSEtONl Collector to Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 5) Current Gain Bandwidth Product 125 5.000 10.000 1.5 2.0 V V MHz A13 MIN MAX 30 100 100 UNITS V nA nA TEST CONDITIONS Ic = 100 /lA. IB = 0 Vcs = 30 V. IE = 0 VES = 10 V, Ic = 0 Ic = 10 mA, VCE = 5.0 V Ie = 100 mAo VCE = 5.0 V Ie = 100 mAo IB = 0.1 mA Ic = 100 mA, VCE = 5.0 V Ic = 10 mA, VCE = 5.0 V. f = 100 MHz
NOTES: 1 These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mWrC); junction-to-ambient thermal resistance of 200C/W (derating factor of 5.0 mWrC); (TO-236) junction-to-ambient thermal reSistance of 357" C/W (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length 0 300 !loS; duty cycle 0 2%. 6. For product family characteristic curves, refer to Curve Set T164. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-114

SYMBOL CHARACTERISTIC BVcEs ICBO lEBO hFE VCElsatl VBEIONI Collector to Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 5) Current Gain Bandwidth Product 125 10,000 20,000 1.5 2.0 V V MHz A14 MIN MAX 30 100 100 UNITS V nA nA Ic TEST CONDITIONS
= 100 p.A,
IB
=0
VCB
VEB
= 30 V, IE = 0 = 10 V, Ic = 0 Ic = 10 rnA, VCE = 5.0 V Ic = 100 rnA, VCE = 5.0 V Ic = 100 rnA, IB = 0.1 rnA
Ic
= 100 rnA,
VCE
Ic = 10 rnA, VCE f = 100 MHz
= 5.0 V = 5.0 V,
3-115
FAIRCHILD
MPSA18
NPN Small Signal Low Noise Low Level Amplifier
Vceo ... 45 V (Min) hFE ... 500 (Min) @ 100 p,A NF ... 0.5 dB (Typ) (Wldeband)
PACKAGE MPSA18
TO-92
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C case Temperature Voltages" Currents VeEo Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage Ie Collector Current (Peak)
-55 C to 150" C 150C
0.625 W 1.0W
45 V
45V 200 rnA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVeEo BVeBO BVEBO leBO hFE Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current DC Current Gain (Note 5) 400 500 500 500 MIN 45 45 6.5 50 TYP MAX UNITS V V V nA Ie Ie TEST CONDITIONS
= lOrnA, IB = 0
1500 0.2 0.3 0.7 V V V
VCElsatJ VBEIONJ
Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 5)
= 100 p,A, IE = 0 = 10 p,A, Ie = 0 VCB = 30 V, IE = 0 Ic = 10 p,A, VeE = 5.0 V Ie = 100 p,A, VeE = 5.0 V Ic = 1.0 rnA, VeE = 5.0 V Ie = 10 rnA, VCE = 5.0 V Ie = 10 rnA, IB = 0.5 rnA Ic = 50 rnA, IB = 5.0 rnA Ic = 1.0 rnA, VeE = 5.0 V
IE
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (TO-92) junction-to-case thermal resistance of 125"CIW (derating factor of 8.0 mW/" C); junction-to-ambient thermal resistance of 200" ClW (derating factor of 5.0 mW/" C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S; duty cycle = 1%. 6. For product family characte,ristic curves, refer to Curve Set Tl07.
3-116
MPSA18
SYMBOL CHARACTERISTIC Current Gain Bandwidth Product Collector to Base Capacitance Emitter to Base Capacitance Noise Figure
MIN 100
TYP
MAX
UNITS MHz
TEST CONDITIONS
Ie = 1.0 mA, VeE = 5.0 V,

f = 100 kHz
VeB =5.0 V, IE =0, f = 1.0 MHz VEB = 0.5 V, Ie =0, f = 1.0 MHz Ie = 100 J.lA, VeE = 5.0 V, Rs = 10 kn, f = 10 Hz to 15.7 kHz Ie = 100 J.lA, VeE = 5.0 V, Rs = 10 kn, f = 100 Hz
CCb COb NF
3.0 6.5 0.5 4.0 1.5
pF pF dB dB
3-117
FAIRCHILD
Vcco ... 40 V (Min) hFE... 40-400 @ 5.0 mA VCEIsatl ... 0.25 V (Max) @ 10 mA Cob ... 4.0 pF (Max) 10 V Complements ... MPS/FTSOA20 (NPN), MPS/FTSOA70 (PNP)
TO-92 TO-92 TO-236AAIAB TO-236AA!AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 70 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VEBO Emitter to Base Voltage Ic Collector Current (Continuous)
-55 C to 150 C 150C
MPS 0.625 W 0.400 W 1.0W
FTSO 0.350 W'
40V 4.0 V 100 rnA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) BVcEo ICBO hFE VCEIsatl SYMBOL CHARACTERISTIC MIN Collector to Emitter Breakdown Voltage 40 Emitter to Base Breakdown Voltage Collector Cutoff Current DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Current Gain Bandwidth Product Output Capacitance 125 4.0 40 4.0 100 400 0.25 V MHz pF MAX UNITS V V nA TEST CONDITIONS Ic = 1.0 mA, IB = 0 IE = 100 /LA, Ic = 0 VCB = 30 V, IE = 0 Ic = 5.0 mA, VCE = 10 V Ic = 10 rnA, IB = 1.0 rnA Ic =5.0 rnA, VCE = 10V, f=100MHz VCB = 10 V, IE = 0, f = 100 kHz
BVEBo
h
Cob
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-to-case thermal resistance of 1250 CIW (derating factor of 8.0 mW/o C); junction-to-ambient thermal resistance of 2000 ClW (derating factor of 5.0 mW/o C); (TO-236) junction-to-ambient thermal resistance of 357 0 CIW (derating factor of 2.8 mW/O C). 4. Rating refers to a high current point where coliector to emitter voltage is lowest. 5. Pulse conditions: length =300 l; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T144 for MPSA20 & T215 for MPSA70. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-118
FAIRCHILD
NPN Small Signal High Voltage General Purpose Amplifiers
VCEO ... 300 V (Min) (MPS/FTSOA42), 200 V (Min) MPS/FTSOA43) h FE 40 (Min) @ 10 mA IT ... 50 MHz (Min) Complements ... MPSA92, MPSA93
PACKAGE MPSA42 MPSA43 FTS0A42 FTS0A43
TO-92 TO-92 TO-236AA! AB TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEo Collector to Emitter Voltage (Note 4) VeBo Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current (Continuous)
-55 C to 150 C 150 C
MPS 0.625 W 1.0 W A42 300 V 300 V 8.0 V 500 mA
FTSO 0.350 W*
UNITS V V V /lA /lA Ie Ic IE TEST CONDITIONS
A43 200 V 200 V 6.0 V 500 mA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVcEo BVcBo BVEBo leBo
NOTES:
1 2 3. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. These are steady state limits. The factory should be consulted on applications involving pulsed Of low duty cycle operations. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-ta-case thermal resistance of 1250 C/W (derating factor of 8.0 mW/O C); junction-ta-ambient thermal resistance of 200 0 C/W (derating factor of 5.0 mwr C): (TO-236) junction-to-ambient thermal resistance of 357" C/W (derating factor of 28 mW/ o C). Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length = 300 "s; duty cycle = 1%. For product family characteristic curves, refer to Curve Set T176. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
A42 MIN MAX
A43 MIN MAX 200 200
Collector to Emitter Breakdown 300 Voltage (Note 5) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current 300
= 1.0 mA, = 100 /lA, = 100 /lA, = 200 V, = 160 V,
IB IE Ic IE IE
=0 =0 =0 =0 =0
I
8.0 0.1 0.1 6.0
VCB VCB
4. 5. 6.
3-119
MPSA421FTSOA42 MPSA43/FTSOA43

SYMBOL CHARACTERISTIC Emitter Cutoff Current lEBO hFE DC Current Gain A42 MIN MAX 0.1 25 40 40 0.5 0.9 A43 MIN MAX 0.1 25 40 50 UNITS p.A p.A TEST CONDITIONS VEB = 6.0 V, Ie = 0 VEB = 4.0 V, Ie = 0 Ie = 1.0 rnA, VeE = 10 V Ie = 10 rnA, Vee = 10 V Ie = 30 rnA, VeE = 10 V V V MHz 4.0 pF Ie = 20 rnA, IB = 2.0 rnA Ie = 20 rnA, IB = 2.0 V Ie = 10 rnA, VeE = 20 V, f = 100 MHz VeB = 20 V, IE = 0, f=1.0MHz
200 0.4 0.9
VCE'sal1 VBEcsa11
Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Current Gain Bandwidth Product Collector to Base Capacitance
h
Ccb
50
3.0
50
3-120
FAIRCHILD
MPSA5S/FTSOA55 MPSA56/FTSOA56
PNP Small Signal General Purpose Complementary Amplifiers
VeEo ... -60 V (Min) (MPS/FTSOA55), -80 V (Min) (MPS/FTSOA56) hFE 50 (Min) @ 100 mA VeE(Sat) ... -0.25 V (Max) @ 100 mA Complements ... MPS/FTSOA05, MPS/FTSOA06 (NPN)
TO-9:~
TO-9:~
TO-2:~6AAI AB TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 70 C Ambient Temperature 25C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VeBo Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current
-55 C to 150 C 150C
I
FTSO 0.350 W' A56 -80 V
-80 V -4.0 V 500 mA
MPS 0.625 W 0.400 W 1.0W A55 430 V

430 V -4.0 V 500 mA

SYMBOL CHARACTERISTIC BVeEo BVEBo leBO A55 MIN MAX A56 MIN MAX -80 -4.0 100 100 UNITS V V nA nA Ie IE TEST CONDITIONS
Collector to Emitter Breakdown 430 Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current -4.0
= 1.0 mAo = 100 ,uA. = 430 V. = -80 V.
IB Ie IE IE
=0 =0 =0 =0
VCB VCB
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (TO-92) junction-to-case thermal resistance of 125" C/W (derating factor of 8.0 mWI"C): junction-toambient thermal resistance of 200"c/W (derating factor of 5.0 mWI"C): (TO-236) junction-to-ambient thermal resistance of 357" C/W (derating factor of 2.8 mWI"C). 4. Rating refers to a high current paint where collector to emitter VOltage is lowest. 5. Pulse conditions: length = 300 I'S: duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T224. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-121

SYMBOL CHARACTERISTIC DC Current Gain (Note 5) hFE VeEfsatl VeEfoNI Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage Current Gain Bandwidth Product 50 A55 MIN MAX 50 50 -<l.25 -1.2 50 A56 MIN MAX 50 50 -0.25 -1.2 V V MHz UNITS Ie Ie TEST CONDITIONS
= 10 rnA, VeE = -1.0 V = 100 rnA, VeE = -1.0 V Ie = 100 rnA, Ie = 10 rnA
Ie
= 100 rnA,
VeE
= -1.0 V
Ie = 100 rnA, VeE = -1.0 V,

f
= 100 MHz
3-122
FAIRCHILD
MPSA92/MPSA93
PNP Small Signal High Voltage General Purpose Amplifiers
BVcEo ... -300 V (Min) (MPSA92), -200 V (Min) (MPSOA93) hFE ... 40 (Min) @ 10 mA h ... 50 MHz (Min) Complements ... MPSA42, MPSA43
PACKAGE MPSA92 MPSA93
TO-92 TO-92
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current (Continuous)
-55 C to 150 C 150C
A93 -200 V -200 V -5.0 V 500 mA

A93 MIN MAX -200 -200 -5.0 0.25 0.25 0.1 0.1 25 40 30 UNITS V V V JJ.A ~ JJ.A TEST CONDITIONS Ie = 1.0 mA, IB = 0 Ie = 100 JJ.A, IE = 0 IE = 10 JJ.A, Ie = 0 VCB = -200 V, IE = 0 VCB = -160 V, IE = 0 VEB = -3.0 V, Ic = 0
0.625 W 1.0W
A92 -300 V -300 V -5.0 V 500 mA

SYMBOL CHARACTERISTIC BVcEO BVcBo BVEBo ICBO lEBO hFE A92 MIN MAX
Collector to Emitter Breakdown -300 Voltage (Note 4) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current -300 -5.0
I DC
Current Gain
25 40 25
Ie = 1.0 mA, VCE = -10 V

le=10mA,VcE =-10V 150
Ie = 30 mA, VCE = -10 V
NOTES:
1.
These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired.
2. 3. 4. 5. 6.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. These ratings give a maximum junction temperature of 150' C and (TO-92) junction-to-case thermal resistance of 125' C/W (derating factor of B.O mWr C); junction-to-ambient thermal resistance of 200' C/W (derating factor of 5.0 mW/' C). Rating refers to a high current pOint where collector to emitter voltage is lowest. Pulse conditions: length ~ 300 I'S; duty cycle ~ 1'10. For product family characteristic curves, refer to Curve Set T139.
3-123
MPSA921MPSA93
ELECTRICAL CHARACTERISTICS (25 0 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Collector to Emitter Saturation VeE(Sa" Voltage VeE (sa" Base to Emitter Saturation Voltage Current Gain Bandwidth Product Collector to Base Capacitance 50 6.0 A92 MIN MAX -0.5 -0.9 A93 MIN MAX -0.4 UNITS V V MHz 8.0 pF TEST CONDITIONS Ie = 20 rnA, Ie = 2.0 rnA Ie = 20 rnA, Ie = 2.0 rnA Ie = 10 rnA, VeE = -20 V, f 100 MHz
-0.9 50
h
Ccb
Vee = -20V, IE=O, f=1.0MHz
3-124
FAIRCHILD
MPSL01/FTSOL01 MPSL51/FTSOL51
NPN-PNP High Voltage Complementary Small Signal General Purpose Amplifiers

PACKAGE MPSL01 MPSL51 FTSOL01 FTSOL51 TO-92 TO-92 TO-236AAI AB TO-236AAI AB
VeEo ... 120 V (Min) (MPS/FTSOL01), -100 V (Min) (MPS/FTSOL51) VeElsatl ... 0.30 V (Max) @ 50 mA Complements ... MPS/FTSOL01 (NPN), MPS/FTSOL51 (PNP)
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 70 C Ambient Temperature 25 C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VeBo Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current
-55 C to 150 C 150C
MPS 0.625 W 0.400 W 1.0W L01 120 V 140 V 5.0 V 600 rnA
FTSO 0.350 W'
UNITS V V V J1.A J1.A nA nA TEST CONDITIONS (Reverse Voltage Polarity for PNP) Ie Ie IE
L51 -100 V
-100 V
-4.0 V
600 rnA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVeEo BVeBo BVEBo leBo lEBO CHARACTERISTIC Collector to Emitter Breakdown Voltage (Note 5) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current L01 MIN MAX 120 140 5.0 1.0 1.0 100 100 L51 MIN MAX -100 -100 -4.0
= 1.0 rnA, = 100 J1.A, = 10 J1.A,
IB IE
=0 =0
Ie
=0
= 75 V, IE = 0 = 50 V, IE = 0 VEB = 4.0 V, Ie = 0 VEB = 3.0 V, Ie = 0

VeB VeB
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of ISO" C and (TO-92) junction-to-case thermal resistance of 125" C/W (derating factor of 8.0 mWI"C); junction-to-ambient thermal resistance of 200"c/W (derating factor of 5.0 mWI"C); (TO-236) iunction-to-ambient thermal resistance of 35rC/W (derating factor of 2.8 mW/" C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ""; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T147 for MPSLOI & T232 for MPSL51. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-125
MPSL01/FTSOL01 MPSL51/FTSOL51

SYMBOL CHARACTERISTIC hFE VCEfSatJ
VBE(Sat)
L01 MIN MAX 50 300
L51 MIN MAX 40 250 -0.25 -0.30 -1.2 -1.2 60
UNITS
TEST CONDITIONS (Reverse Voltage Polarity for PNP)
DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Current Gain Bandwidth Product Output Capacitance Small Signal Current Gain
Ie = 10 mA, VCE = 5.0 V Ic = 50 mA, VeE = 5.0 V

V V V V MHz Ic = 10 mA, Is = 1.0 mA Ic = 50 mA, Is = 5.0 mA Ic=10mA,ls=1.0mA Ie = 50 mA. Is = 5.0 mA
0.20 0.30 1.2 1.4
h
COb hfe
60
8.0 30
Ie = 10 mA, VCE = 10 V, f = 100 MHz

Vcs =10V,I E=O,f=1.0MHz Ie = 1.0 mA, VCE = 10 V, f = 1.0 kHz
8.0 20
pF
3-126
FAIRCHILD
PE4010
NPN High Gain Low Noise Type

Temperatures
PACKAGE PE4010
TO-92

Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 70 C Case Temperature 25 C Case Temperature Voltages & Currents
-55 C to 150 C 150C
0.625 W 0.400 W 1.0 W
VCEO VCBo VEBO
Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage
25 V 30 V 6.0 V
MIN 30 6.0 200 3.0 200 1.0 3.0 350 100 1.3 1000 TYP MAX UNITS V V
nA pA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVcBo BVEBO ICBO hFE hfe Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current (65) DC Current Gain High Frequency Current Gain TEST CONDITIONS Ic = 100 IE = 100
JJA, JJA,
IE = 0 Ic = 0
VCB = 5.0 V, IE = 0 VCB = 5.0 V, IE = 0 Ie = 1.0 mA, VCE = 10 V Ic = 50 JJA, VCE = 10 V Ie = 50 JJA, VCE = 5.0 V, f = 20 MHz Ic = 1.0 mA. VCE = 5.0 V, f = 20 MHz
VCEO(sus) VCE(sat) Cob NF

I
Collector to Emitter Sustaining Voltage (Notes 3 & 4) Collector to Emitter Saturation Voltage Output Capacitance
I
25 0.35 4.0 1.5

I
V V pF dB
Ic=10mA,IB=0 Ic = 1.0 mA, IB = 0.1 mA VCB = 5.0 V, IE = 0 Ic = 30 /lA, VCB = 5.0 V
Narrow Band Noise Frequency (Note 5)
3.0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125C/W (derating factor of 8.0 mW/O C): junction-to-ambient thermal resistance of 200C/W (derating factor of 5.0 mWr C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 1"': duty cycle = 1%. Rs ~ 10 k!l: f = 1.0 kHz: Power Bandwidth of 200 Hz. 6. For product family characteristic curves, refer to Curve Set T107.
3-127
FAIRCHIL.D
PE4020
NPN Low Level Low Noise Amplifier
hFE ... 100 (Min) @ 10 /loA, 150 (Min) @ 10 mA VCECsatl ... 0.2 V (Max) @ 10 mAlO.5 mA ICBO ... 2.0 nA (Max) @ 45 V, 50 nA (Max) @ 45 V, TA =65 C NF ... 2.5 dB (Typ) @ 100 Hz; 1.0 kO
PACKAGE PE4020
TO-92
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures -55 C to 150 C Storage Temperature 150C Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) Vceo Collector to Base Voltage VEeo Emitter to Base Voltage Ic Collector Current (Continuous)
0.625 W 1.0W
60V 60V 8.0 V 50mA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Emitter to Base Breakdown Voltage BVEBO BVcEs ICBO lEBO Collector to Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current MIN 8.0 60 2.0 50 1.0 MAX UNITS V V nA nA nA TEST CONDITIONS IE = 10
1IoA.
Ic = 0
Ic = 10 1IoA. Ie = 0 Vce = 45 V. IE = 0 Vce=45V.IE=0. TA = 65C VEe = 5.0 V. Ic = 0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle bperations. 3. These ratings give a maximum junction temperature of 150 C and a maximum junction temperature of 125 Cand junction-to-case thermal resistance of 200 CIW (derating factor of 5.0 mW/o C); junction-to-ambient thermal resistance of SOOo CIW jderating factor of 2.0 mW/oC). 4. Rating refers to a high current point where collector to emitter voltage is lowest. . 5. Pulse conditions: length = 300 1'8; duty cycle = 1%. 6. For product family characteristic curves. refer to Curve Set n07.
3-128
PE4020

SYMBOL hFE hFE CHARACTERISTIC DC Pulse Current Gain (Note 5) DC Current Gain MIN 150 135 120 100 25 1.0 60 0.7 0.3 0.2 4.0 6.0 6.0 3.0 NF Wide Band Noise Figure 3.0 2.0 V V V V pF pF dB dB dB MAX 950 UNITS Ic Ic Ic Ic
= = = =
TEST CONDITIONS Ic = 10 mAo VCE = 5.0 V 1.0 mAo VCE = 5.0 V 100 JJA. VCE = 5.0 V 10 J1.A. V CE = 5.0 V 10 JJA. VCE = 5.0 V. TA = -55C
hfe VCEO(SUSI VBE(ONI VCE(SaU CCb Ceb NF
High Frequency Current Gain Collector to Emitter Sustaining Voltage (Notes 4 & 5) Base to to Emitter "On" Voltage Pulsed Collector to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Emitter to Base Capacitance Narrow Band Noise Figure
Ic = 10 mAo VCE = 5.0 V. f = 100 MHz Ic = 5.0 mAo IB = 0 Ic = 1.0 mAo VCE = 5.0 V Ic = 50 mAo IB = 5.0 mA Ic = 10 mAo IB = 0.5 mA VCB = 5.0 V. IE = 0 VEB = 0.5 V. Ic = 0 Ic = 100 JJA. VCE = 5.0 V. f = 1.0 kHz Rs = 1.0 kO. BW = 400 Hz Ic = 10 J1.A. VCE = 5.0 V. f = 1.0 kHz Rs = 10 kO. BW = 400 Hz Ic = 10 J1.A. VeE = 5.0 V.
f = 10Hz to 10kHz
Rs = 10 kO. BW = 15.7 kHz
3-129
FAIRCHILD
PE7058/PE7059
NPN High Voltage Video Output
VCEO ... 220 V to 300 V (Min) @ 10 mA 4.0 pF (Max) @ 20 V h ... 40 to 50 MHz (Min) hFE ... Outstanding Beta Linearity to 100 mA
CCb
PACKAGE PE7058 PE7059
TO-92 TO-92
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2, 3 & 6) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents BVCEO Collector to Emitter Voltage (Note 4) BVcBo Collector to Base Voltage BVEBO Emitter to Base Voltage Ie Collector Current (Continuous) Ic Collector Current (Pulsed)
-65C to 150C 150C
0.625 W 1.0 W
7058
220 V 220 V 7.0 V 500 mA 2.0A
7059
300 V 300 V 7.0 V 500 mA 2.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVcEO BVcBo BVEBO ICBo ICES lEBO hFE Collector to Emitter Breakdown Voltage (Note 5) Collector to Base Breakdown Voltage (Note 5) Emitter to Base Breakdown Voltage (Note 5) Collector Cutoff Current (Note 5) Collector Reverse Current (Note 5) Emitter Cutoff Current DC Current Gain (Note 5) 20 40 40 15 PE7058 MIN MAX 220 220 7.0 100 100 100 UNITS V V V nA nA nA TEST CONDITIONS
Ie = 10 mA, IB = 0
Ic IE
= 100 jJ.A,
IE
=0
= 10 jJ.A, Ie = 0
VCE
= 200 V, IE = 0 = 100 V, VBE = 0 VEB = 6.0 V, Ic = 0 Ic = 1.0 mA, VCE = 20 V Ic = 10 mA, VeE = 20 V Ie = 30 mA, VCE = 20 V Ic = 150 mA, VCE = 20 V
VCB
3. 4. 5. 6.
These ratings give a maximum junction temperature of 1500 C and (T092) junction-to-case thermal resistance of 1250 CIW (derating factor of 5.0 mWrC); junction-to-ambient thermal resistance of 2000 C/W (derating factor of 5.0 mW/ o C). Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length = 300 pS; duty cycle = 1%. For product family characteristic curves, refer to Curve Set T176.
3-130
PE7058/PE7059

SYMBOL CHARACTERISTIC Collector to Emitter Saturation VCE(sat) Voltage (Note 5) VBEI.all Base to Emitter Saturation Voltage (Note 5) High Frequency Current Gain PE7058 MIN MAX 1.0 0.65 40 40 40 40 Ccb Cab Collector to Base Capacitance Emitter to Base Capacitance 4.0 70 PE 059 MIN MAX 300 300 7.0 100 100 100 20 40 40 10 1.0 0.65 40 40 40 40 Ccb Cab Collector to Base Capacitance Emitter to Base Capacitance 3-131 4.0 70 0.85 V V MHz MHz MHz MHz pF pF 0.85 UNITS V V MHz MHz MHz MHz pF pF TEST CONDITIONS Ic = 20 rnA, IB = 2.0 rnA Ic = 20 rnA, IB = 2.0 rnA Ic = 30 rnA, f = 20 MHz Ic = 30 rnA, f = 20 MHz Ic = 30 rnA, f = 20 MHz Ic = 15 rnA, f = 20 MHz VCE = 10 V, VCE = 20 V, VCE = 40 V, VCE = 100 V,
VCB = 20 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, Ic = 0, f = 1.0 MHz
SYMBOL CHARACTERISTIC BVcEo BVcBo BVEBO ICBo IcES lEBO hFE Collector to Emitter Breakdown Voltage (Note 5) Collector to Base Breakdown Voltage (Note 5) Emitter to Base Breakdown Voltage (Note 5) Collector Cutoff Current (Note 5) Collector Reverse Current (Note 5) Emitter Cutoff Current DC Current Gain (Note 5)
UNITS V V V nA nA nA
TEST CONDITIONS Ic = 10 rnA, IB = 0 Ic = 100 !lA, IE = 0 IE = 10 p.A, Ic = 0 VCB = 200 V, IE = 0 VCE = 100 V, VBE = 0 VEB = 6.0 V, Ic = 0 Ic = Ic = Ic= Ic = 1.0 rnA, VCE = 20 V 10 rnA, VCE = 20 V 30 rnA, VCE = 20 V 150 rnA, VCE = 20 V
VCEIsall VBEI.all
Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) High Frequency Current Gain
Ic = 20 rnA, IB = 2.0 rnA Ic = 20 rnA, IB = 2.0 rnA Ic = 30 rnA, f = 20 MHz Ic = 30 rnA, f = 20 MHz Ic = 30 rnA, f = 20 MHz Ic = 15 rnA, f = 20 MHz VCE = 10 V, VCE = 20 V, VCE = 40 V, VCE = 100 V,
VCB = 20 V, IE = 0, f = 1.0 MHz VEB = 0.5 V, Ic = 0, f = 1.0 MHz
FAIRCHILD
PE8050/PE8550
NPN-PNP General Purpose Complementary Amplifiers & Output Drivers
PACKAGE PE8050 PE8550
VCEO ... 25 V (Min) hFE ... Outstanding Beta Unearity to 1.0 A Three hFE Groups Guaranteed SOA Complements ... PE8050, (NPN), PE8550, (PNP)
TO-92 TO-92
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature
-55 C to 150 C 150C
Power Dissipation (VCE =8.0 V) (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 0.625 W 25 C Case Temperature 1.0 W Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current (Continuous) Ic Collector Current (Pulsed)
25 V 30 V 6.0 V 1.5 A 1.5 A
SYMBOL CHARACTERISTIC MIN Collector to Emitter Breakdown Voltage 25 VCEO (Note 5) VCBO VEBO ICBO hFE Collector to Base. Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current DC Current Gain (Note 5) 50 65 65 40 65 85 120 30 6.0
MAX
UNITS V V V
TEST CONDITIONS Ic Ic IE
= 10 mA,
IB
=0
100 200 200 200 200 130 160 200
nA
.'
Gain Grouping A Gain Grouping B Gain Grouping C
= 100 p.A, IE = 0 = 100 p.A, Ic = 0 VCB = 20 V, IE = 0 Ic = 10 mA, VCE = 1.0 V Ic = 100 mA, VCE = 1.0 V Ic = 500 mA, VCE = 1.0 V Ic = 1.0 A, VCE = 1.0 V Ic = 100 mA, VCE = 1.0 V
NOTES: 1. These ratings are limiting values above whiGh the serviGeability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150' C and (TO-92) junction-to-case thermal resistance of 125' C/W (derating factor of 5.0 mW/'C); junction-to-ambient thermal resistance of 125'C/W (derating factor of B.O mW/'C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S; duty cycle = 1%. 6.. For product family characteristic curves, refer to Curve Set T124 for PEB050 & T202 for PE8550.
3-132
PE8050/PE8550

SYMBOL CHARACTERISTIC hFE1/hFE2 hFE3/hFE4 h'e VCElsaU VBElsaU CCb Beta Ratio at Two Currents Beta Ratio at Two Currents High Frequency Current Gain Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance MIN 0.8 0.8 1.0 0.15 0.5 0.9 1.2 40 V V V V pF MAX 1.8 1.5 UNITS TEST CONDITIONS
Ie, = 100mA, b=800mA, VCE=1.0V
leI = 150mA,1c4=500mA, VCE=1.0V Ie = 50 mA, VCE = 10 V, f = 100 MHz Ic = 200 mA, IB = 20 mA Ic = 1.0 A, IB = 100 mA Ie = 200 mA, IB = 20 mA Ie = 1.0 A, IB = 100 mA VCB = 10 V, Ic = 0, f = 1.0 MHz
3-133
FAIRCHILD
PN918/MPS918/FTS0918 PN3563/MPS3563/FTS03563
NPN Small Signal High Frequency Amplifiers & Oscillators
GPE
15 dB (Min) @ 200 MHz (PN/FTS0918)
PACKAGE
COB ... 1.7 pF (Max) @ 10 V

NF ... 6.0 dB (Max) @ 60 MHz
PN918 PN3563 MPS918 MPS3563 FTS0918 FTS03563
TO-92 TO-92 TO-92 TO-92 TO-236AAI AB TO-236AAI AB

-550 C to 1500 C 150C
Total 250 C 650 C 250 C
Dissipation at Ambient Temperature Ambient Temperature Case Temperature
PN/MPS
FTSO
0.625 W 0.300 W 1.0 W

3563
0.350 W'
Voltages & Currents
918
VCEO VCBO VEBO Ic
Collector to Emitter Voltage (Note 4) Collector to Base Voltage Emitter to Base Voltage Collector Current
12 V 30 V 2.0 V 50 mA
12 V 30 V 3.0 V 50 mA
SYMBOL CHARACTERISTIC BVcBo BVEBO ICBO hFE VCEOISUS) VCEISa!) VBElsatl Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current DC Current Gain (Note 5)
3563 MIN MAX 30
MPS918 MIN MAX 30
UNITS V V V
TEST CONDITIONS Ic = 100 jlA, IE = 0 Ic = 10 jlA, IE = 0 IE = 10 jlA, Ic = 0 VCB = 15 V, IE = 0 Ic = 3.0 mA, VCE = 1.0 V Ic = 8.0 mA, VCE = 10 V
2.0 50
3.0 10 20
nA
20 Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage 12
200 15 0.4 1.0 V V V
Ic = 3.0 mA, IB = 0 Ic = 10 mA, IB = 1.0 mA Ic = 10 mA, IB = 1.0 mA
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125C/W (derating factor of 8.0 mW/o C); junction-to-ambient thermal resistance of 200 CIW (derating factor of 5.0 mWr C); (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 JlS; duty cycle"; 1%. 6. For product family characteristic curves, refer to Curve Set T121. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-134
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERI STIC Output Capacitance Cob C;b hIe Input Capacitance High Frequency Current Gain 6.0 hIe Gpe Small Signal Current Gain Available Power Gain (neutralized) (test circuit 254 for MPS918, PN/MPS3563) Power Output (test circuit no. 264) Collector Efficiency Collector to Base Time Constant Noise Figure 8.0 25 6.0 20 15 250 15 14 26 30 25 dB dB mW
%
3563 MIN MAX 1.7
MPS918 MIN MAX 1.7 3.0 2.0 6.0
UNITS pF pF pF
TEST CONDITIONS Vce=10V,IE=0,f=1.0MHz Vce = 0, IE = 0, f = 1.0 MHz VEe =0.5 V, Ic =0, f = 1.0MHz Ic = 4.0 rnA, VCE = 10 V, f = 100 MHz Ic = 8.0 rnA, VCE = 10 V, f = 100 MHz Ic = 8.0 rnA, VCE = 10 V, f = 1.0 kHz Ic = 6.0 rnA, Vce = 12 V, f = 200 MHz Ic = 8.0 rnA, VCE = 10 V, f = 200 MHz Ic = 8.0 rnA, Vce = 15 V, f = 500 MHz Ic = 8.0 rnA, Vce = 15 V, f = 500 MHz Ic = 8.0 rnA, Vce = 10 V, f = 79.8 MHz Ic = 1.0 rnA, VCE = 6.0 V, f = 60 kHz, RG = 400 .n
Po
1]
rb'Cc NF
pF dB
SYMBOL CHARACTERISTIC Collector to Base Breakdown Voltage BVceo BVEeo Iceo Emitter to Base Breakdown Voltage Collector Cutoff Current
PN918 MIN MAX 30 3.0 10 1.0 20 15 0.4 1.0 1.7 3.0 1.6
UNITS V V nA !LA
TEST CONDITIONS Ic= 1O !LA,IE =0 IE = 10 !LA, Ic = 0 Vce=15V,IE=0 Vce = 15 V, IE = 0, TA = 150"C Ic = 3.0 rnA, VCE = 1.0 V Ic = 3.0 rnA, Ie = 0 Ic = 10 rnA, Ie = 1.0 rnA Ic = 10 rnA, Ie = 1.0 rnA Vce = 10 V, IE = 0, f = 1.0 MHz Vce = 0, IE = 0, f = 1.0 MHz VEe = 0.5 V, Ic = 0, f = 1.0 MHz
hFE VCEOISUS) VCEIOatl VeEIsatl Cob C;b
DC Current Gain (Note 5) Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage Output Capacitance Input Capacitance
V V V pF pF pF
3-135
ELECTRICAL CHARACTERISTICS (25 0 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC High Frequency Current Gain h,. G pe Po
17
PN918 MIN MAX 6.0 15 30 25 6.0
UNITS
TEST CONDITIONS Ie = 4.0 rnA, VeE = 10 V, f = 100 MHz Ie = 6.0 rnA, Ves f = 200 MHz Ie = 8.0 rnA, Ves f = 500 MHz Ie = 8.0 rnA, Ves f = 500 MHz
Available Power Gain (neutralized) (test circuit 254 for PN918) Power Output (test circuit no. 264) Collector Efficiency Noise Figure
dB mW
%
= 12 V, = 15 V, = 15 V,
NF
dB
Ie = 1.0 rnA, VeE = 6.0 V, f = 60 kHz, RG = 400 n
3-136
FAIRCHILO
PN3565/FTS03565
NPN Low Level High Gain Amplifiers
VCEO ... 25 V (Min) hFE ... 150-600 @ 1.0 rnA
PACKAGE
PN3565 FTS03565 TO-92
TO-236AAI AB

Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Note 2) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 3) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
-55 C to 150 C 150 C
PN
0.625 W 1.0 W
FTSO
0.350 W*
UNITS V V TEST CONDITIONS Ic = 100 JJ.A, IE = 0 IC = 0, IE = 10
25 V 30 V 6.0V 50 mA

SYMBOL BVcBo BVEBo ICBO ICBO hFE VCEOISus) VCElsall Cob hie hie hoe hie CHARACTERISTIC Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current DC Current Gain Collector to Emitter Sustaining Voltage Collector to Emitter Saturation Voltage Open Circuit Output Capacitance High Frequency Current Gain Input Resistance Output Conductance Small Signal Current Gain 2.0 2.0 0.5 120 150 70 25 0.35 40 12 20 100 750 kD. JJ.mhos MIN 30 6.0 50 3.0 600 V V pF MAX
JJ.A
nA JJ.A
VCB = 25 V, IE = 0 VCB = 25 V, IE = 0, T A = 65 C Ic = 1.0 mA, VCE = 10 V Ic = 100 JJ.A, VCE = 10 V Ic = 2.0 rnA, IB = 0 Ie = 1.0 rnA, IB = 0.1 mA IE =0, VCB =5.0V, f = 140 kHz Ic = 1.0 mA, VCE = 5.0 V, f = 20 MHz Ic = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz Ic = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz Ic = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These ratings give a maximum junction temperature of 1500 C and (T092) j unction-to-case thermal resistance of 1250 C/W (derating factor of 8.0 mW/' C); junction-to-ambient thermal resistance of 200' C/W (derating factor of 5.0 mW;o C); (T0236) junction-to-ambient thermal resistance of 357' C/W (derating factor of 2.8 mW;o C). 3. Rating refers to a high current point where collector to emitter voltage.is lowest. 4. For product family characteristic curves, refer to Curve Set T155. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-137
FAIRCHILO
PN3566/FTS03566
VCEO ... 30 V (Min) hFE ... 150-600 @ 10 mA Complement ... MPS3638A
PACKAGE PN3566 FTS03566
TO-92 TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
-55C to 150C 150 C
PN 0.625 W 1.0 W
FTSO 0.350 W*
30 V 40 V 5.0 V 200 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVcBo BVEBO ICBO ICBO lEBO hFE CHARACTERISTIC Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Pulse Current Gain (Note 5) 150 80 MIN 40 5.0 50 5.0 10 600 MAX UNITS V V nA TEST CONDITIONS Ic = 100 p.A, IE = 0 IE = 10 p.A, Ic = 0 VCB = 20 V, IE = 0 VCB=20V,I E =O, TA=75C VEB = 5.0 V, Ie = 0 Ic = 10 mA, VCE = 10 V Ie = 2.0 mA, VCE = 10 V
p.A p.A
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum iunction temperature of 150" C and (TO-92) junction-to-case thermal resistance of 125" C/W (derating factor of 8.0 mWrC); junction-to-ambient thermal resistance of 200"C/W (derating factor of 5.0 mWrC); (TO-236) junction-to-ambient thermal resistance of 35rC/W (derating factor of 2.8 mWrC). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length ~ 300 MS; duty cycle ~ 1%. 6. For product family characteristic curves, refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-138
PN3566/FTS03566

SYMBOL CHARACTERISTIC VCElsatl VCEOISUSI VBEIONI Cob hie Collector to Emitter Saturation Voltage (Pulsed) (Note 5) Collector to Emitter Sustaining Voltage (Notes 4 & 5) Base to Emitter "On" Voltage (pulsed) (Note 5) Output Capacitance High Frequency Current Gain 2.0 30 0.9 25 35 MIN MAX 1.0 UNITS V V V pF TEST CONDITIONS Ic = 100 rnA, IB = 10 rnA Ic = 30 rnA, IB = 0 (pulsed) Ic = 100 rnA, VCE = 1.0 V VCB = 10 V, IE = 0, f = 140 kHz Ic = 30 rnA, VCE = 10 V, f = 20 MHz
3-139
FAIRCHILD
PN3567/FTS03567 PN3569/FTS03569
Vceo ... 40 V (Min)

hFe ... 100-300 @ 10 mA (3569); 40-120 @ 150 mA (3567)
Complement ... MPS4355
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents Vceo Collector to Emitter Voltage (Notes 4 & 6) VCBO Collector to Base Voltage VeBo Emitter to Base Voltage Ic Collector Current IB Base Current
PACKAGE PN3567 PN3569 FTS03567 FTS03569
TO-92 TO-92 TO-236AAIAB TO-236AAIAB
-55 C to 150 C 150C
PN 0.625 W 1.0 W
FTSO 0.350 W'
40V 80V 5.0V 500 mA 100 mA
3567 SYMBOL CHARACTERISTIC MIN MAX Collector to Emitter Breakdown 40 BVceo Voltage (Note 5) BVcBo BVeBo ICBO leBo Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current 80 5.0 50 5.0 25
3569 MIN MAX 40 80 5.0
UNITS V V V
TEST CONDITIONS Ic Ic Ie
= 30 mA, = 100 p.A, = 10 p.A,
IB Ie
=0 =0
Ic
=0
50 5.0
25
nA p.A nA
VCB VCB
= 40 V, Ie = 0 = 40 V,le = 0, T A = 75 C VeB = 4.0 V, Ic = 0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (TO-92) junction-to-case thermal resistance of 125C/W (derating factor of 8.0 mW/OC); junction-to-ambient thermal resistance of 200"ClW (derating factor of 5.0 mW/OC); (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/OC). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 pS; duty cycle = 1%. 6. Applicable 0 to 30 rnA. 7. For product family characteristic curves, refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-140
PN3567/FTS03567 PN3569/FTS03569
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 7) SYMBOL CHARACTERISTIC DC Current Gain (Note 5) hFE VeEIS." VeEloNI Ccb Ceb Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 5) Collector to Base Capacitance Emitter to Base Capacitance Magnitude of Common Emitter Small Signal Current Gain MIN
3567 MAX 120 40 40 0.25 1.1 20 80
MIN
3569 MAX 100 300 100 0.25 1.1 20 80 3.0

30
UNITS
TEST CONDITIONS Ie = 150 mA, VeE = 1.0 V Ie = 30 mA, VeE = 1.0 V Ie = 150 mA, Ie = 15 mA Ie = 150 mA, VeE = 1.0 V Vee = 10 V, IE = 0, f = 140 kHz VEe =0.5 V, ic=O, f = 140 kHz Ie = 50 mA, VeE = 10 V, f = 20 MHz
V V pF pF
Ihlel
3.0
30
3-141
FAIRCHILO
PN/MPS/FTS03638 PN/MPS/FTS03638A
PNP Small Signal General Purpose Amplifiers & Switches
VCEO ... -25 V (Min) hFE . 30 (Min) (PN/MPS/FTS03638), 100 (Min) (PN/MPS/FTS03638A) @ 50 rnA ton 75 ns (Max) @ 300 rnA; toff 170 ns (Max) @ 300 rnA Complements ... PN3641, PN3643
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 250 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBo Collector to Base Voltage VCES Collector to Emitter Voltage VEBO Emitter to Base Voltage Collector Current (Note 2) Ic
PACKAGE PN3638 PN3638A MPS3638 MPS3638A FTS03638 FTS03638A
TO-92 TO-92 TO-92 TO-92
-55 C to 150 C 1500 C
PN/MPS 0.625 W 1.0 W
FTSO 0.350 W*
-25 V -25 V -25 V -4.0 V 500 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVCEs BVcBo BVEBO ICES CHARACTERISTIC 3638 MIN MAX 3638A MIN MAX -25 -25 -4.0 35 2.0 35 2.0 UNITS V V V nA j1.A TEST CONDITIONS
Collector to Emitter Breakdown -25 Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Reverse Current -25 14.0
Ie = 100 j1.A, VBE = 0

Ic IE
= 100 j1.A, = 100 j1.A,
VBE Ic
=0
=0 =0 = 0,
VCE = -15 V, VSE VCE = -15 V, VBE TA = 65C
NOTES:
1. 2. 3. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-to-case thermal resistance of 1250 CIW (derating factor of 8.0 mWr C); junction-to-ambient thermal resistance of 2000 CIW (derating factor of 5.0 mWr C); (TO-236) junction-to-ambient thermal resistance of 35JO CIW (derating factor of 2.8 mWr C). Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length 0 300 MS; duty cycle 01%. For product family characteristic curves. refer to Curve Set T212. Package mounted on 99.5% alumina 8 rnm x 8 mm x 0.6 mm.
4. 5. 6.
3-142
PN/MPS/FTS03638 PN/MPS/FTS03638A

3638 MIN MAX SYMBOL CHARACTERISTIC DC Pulse Current Gain (Note 5) hFE (MPS3638) 20 3638A MIN MAX UNITS TEST CONDITIONS Ic =10mA,VcE =-10V Ic = 10 mA, VCE = -10 V Ic = 1.0 mA, VCE = -10 V Ie = 50 mA, VCE = -1.0 V Ic = 300 mA, VCE = -2.0 V V -0.25 -1.0 -0.8 -1.1 -2.0 10 V V V V pF Ic = 10 mA, Is = 0 Ic = 50 mA, Is = 2.5 mA1 Ic = 300 mA, Is = 30 mA Ic = 50 mA, Is = 2.5 mA Ic = 300 mA, 18 = 30 mA Vcs =-10V,IE=0,f=140kHz
30 20 VCEO(SUS)
VCE(satl
100 80 100 20 -25 -0.25 -1.0
Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage (Pulsed) (Note 5) Base to Emitter Saturation Voltage (Note 5) Common Base Open Circuit, Output Capacitance Common Base Open Circuit, Input Capacitance (PN3638A) (MPS3638A) Magnitude of Small Signal Current Gain Small Signal Current Gain (PN3638) (MPS3638)
-25
VSE(satl COb C;b
-0.8
-1.1 -2.0 20
65 1.0 1.5
35 25
pF pF
VES =-0.5 V, Ic =0, f=140kHz VEB = -0.5 V, Ic =0, f =140kHz Ic = 50 mA, VCE = -3.0 V, f = 100 MHz Ic = 10 mA, VCE = -10 V, f = 1.0 kHz Ic = 10 mA, VCE = -10 V, f = 1.0 kHz Ic = 10 mA, VCE = -10 V, f = 1.0 kHz
h'e h'e
25 25 180 100
hie hoe hre ton toft
Input Resistance (MPS3638) Output Conductance Voltage Feedback Ratio Turn On Time (test circuit no. 536) Turn Off Time (test circuit no. 536)
2000 1500 1200 2600 75 170
2000 1200 1500 75 170
f1 f1
~mhos
Ic = 10 mA, VCE = 10 V, f = 1.0 kHz Ic = 10 mA, VCE = -10 V, f = 1.0 kHz Ic = 10 mA, VCE = -10 V, f = 1.0 kHz Ic = 300 mA, lSI Vcc = 10 V
X10-6 ns ns
30 mA,
Ic = 300 mA, lSI = IS2 = 30 mA, Vcc = 10 V
3-143
PN/MPS/FTS03639 PN/MPS/FTS03640
PNP High Speed Saturated Logic Switches
VCEO ... 12 V (Min) (PN/MPS3640)
PACKAGE PN3639 PN3640 MPS3639 MPS3640 FTS03639 FTS03640
ton ... 25 ns (Max) @ 50 mA, 60 ns (Max) @ 10 mA; toff . , . 35 ns (Max) @ 50 mA, 75 ns (Max) @ 10 mA
Complements ... PN4274, 2N5769
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEo Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Collector Current Ic
-55 C to 1500 C 150 C
PN/MPS 0.625 W 1.0 W 3639 -6V
FTSO 0.350 W*
3640 -12 V
-6V -4.0 V 80 mA
-12 V -4.0 V 80 mA
SYMBOL BVcEs BVcBo BVEBO ICES
CHARACTERISTIC
PN3639 MIN MAX
PN3640 MIN MAX -12.0 -12.0 -4.0
UNITS V V V nA nA p.A p.A
TEST CONDITIONS Ic = 100 p.A, VBE = 0 Ic = 100 p.A, IE = 0 IE = 100 p.A, Ic = 0 VCE = -3.0 V, VBE = 0 VCE = -6.0 V, VBE = 0 VCE =-3.0V, VBE=O, TA=65C VCE = -6.0V, VBE =0, TA =65 C Ic = 10 mA, VCE = -0.3 V Ic = 50 mA, VCE = -1.0 V
Collector to Emitter Breakdown -6.0 Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Reverse Current -6.0 -4.0 50
50 1.0 1.0 hFE DC Pulse Current Gain (Note 5) 30 20 120 30 20 120
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-to-case thermal resistance of 1250 elW (derating factor of 8.0 mWfO C); junction-to-ambient thermal resistance of 2000 C/W (derating factor of 5.0 mW/o C); (TO-236) junction-to-ambient thermal resistance of 35r C/W (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowes!. 5. Pulse conditions: length ~ 300 I'S; duty cycle ~ 1%. 6. For product family characteristic curves, refer to Curve Set T292. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-144
...

SYMBOL CHARACTERISTIC Collector to Emitter Sustaining VCEO(SUS) Voltage (Note 5) VCE(sati Collector to Emitter Saturation Voltage (Note 4) PN3639 MIN MAX -6.0 -0.16 -0.5 -0.25 -0.23 PN3640 MIN MAX -12 -0.2 -0.6 -0.3 -0.25 UNITS V V V V V V V V pF pF pF TEST CONDITIONS Ic = 10 mA, IB = 0 Ie = 10 mA, Ie = 50 mA, Ic = 10 mA, Ie = 10 mA, TA=65C IB IB IB IB = = = = 1.0 5.0 0.5 1.0 mA mA mA mA,
VBE(sati
Base to Emitter Saturation Voltage (Note 5) Output Capacitance Input Capacitance High Frequency Current Gain
-0.75 -0.95 -0.75 -0.95 -0.8 -1.0 -0.8 -1.0 1.5 1.5 3.5 5.5 3.5 3.0 5.0 3.0 5.0 30 25 60 25 60 50 25 60 35 75 3.5 5.5 3.5
Ie = 10 mA, IB = 0.5 mA Ic=10mA,IB=1.0mA Ie = 50 mA, IB = 5.0 mA VeB = -5.0 V, IE =0, f =140 kHz VeB = 0, IE = 0, f = 140 kHz VEB = -0.5 V, Ic =0, f =140 kHz Ie = 10 mA, VCB = 0, f=100MHz Ie = 10 mA, VCE = -5.0 V, f = 100 MHz
COb C;b hie
Ts ton
Storage Time (test circuit no. 234) Turn On Time (test circuit no. 235) (test circuit no. 219) Turn Off Time (test circuit no. 235) (test circuit no. 219)
ns ns ns ns ns
Ie = 10 mA, IB1 = IB2 = 10 mA, Vee = 3.0 V Ie = 50 mA, IB1 = 5.0 mA, Vec = 6.0 V Ie = 10 mA, IB1 = 0.5 mA, Vcc=-1.5V Ic = 50 mA, IB1 = IB2 = 5.0 mA, Vce = 6.0 V Ic =10mA, 181 = 182=0.5 mA, Vec = 1.5 V
toll
SYMBOL CHARACTERISTIC BVCES BVcBo BVEBO ICES
MPS3639 MIN MAX
MPS3640 MIN MAX -12.0 -12.0 -4.0
UNITS V V V nA nA J1.A J1.A
TEST CONDITIONS Ic = 100 J1.A, VBE = 0 Ie = 100 J1.A, IE = 0 IE = 100 J1.A, Ic = 0 VCE = -3.0 V, VBE = 0 VCE = -6.0 V, VBE = 0 VeE =-3.0V, VBE=O, TA = 65" C VCE =-6.0V, VBE=O, TA =65" C
Collector to Emitter Breakdown -6.0 Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Reverse Current -6.0 -4.0 10
10 1.0 1.0
3-145
SYMBOL CHARACTERISTIC DC Pulse Current Gain hFE (Note 5) VeEocsus' VeECsatl
MPS3639 MIN MAX 120 30 20
MPS3640 MIN MAX 30 20 -12 120
UNITS
TEST CONDITIONS Ie = 10 rnA, VeE = -0.3 V Ie = 50 rnA, VeE = -1.0 V
Collector to Emitter Sustaining --6.0 Voltage (Note 5) Collector to Emitter Saturation Voltage (Note 5) -0.16 -0.5 -0.23
V -0.2 -0.6 -0.25 V V V V V V pF pF
Ie = 10 rnA, IB = 0 Ie = 10 rnA, IB = 1.0 rnA Ie = 50 rnA, IB = 5.0 rnA Ie = 10 rnA, 18 = 1.0 rnA, TA = 65C Ie = 10 rnA, IB = 0.5 rnA Ie = 10 rnA, IB = 1.0 rnA Ie = 50 rnA, IB = 5.0 rnA VeB =-5.0V,IE =0, f=140kHz VEB =-0.5 V,le=O, f=140kHz Ie = 10 rnA, VeB = 0, f = 100 MHz Ie = 10 rnA, VeE = -5.0, f = 100 MHz
VBECSatl
Base to Emitter Saturation Voltage (Note 5) Output Capacitance Input Capacitance High Frequency Current Gain
-0.75 -0.95 -0.75 -0.95 -0.8 -1.0 -0.8 -1.0 1.5 1.5 3.5 3.5 3.0 5.0 5.0 25 60 25 60 25 3.5 3.5
Cob CAb
h'e
ton
Turn On Time (test circuit no. 235) (test circuit no. 219) Turn Off Time (test circuit no. 235) (test circuit no. 219)
ns ns ns ns
60
35 75
Ie = 50 rnA, IB1 = 5.0 rnA, Vee = 6.0 V Ie = 10 rnA, IB1 = 0.5 rnA, Vee = -1.5 V Ie = 50 rnA, IB1 = IB2 = 5.0 rnA, Vee = --6.0 V Ie = 10 mA,IB1 = IB2 =0.5 rnA, Vee = 1.5 V
to"
3-146
FAIRCHILD
PN3641/FTS03641 PN36421FTS03642 PN3643/FTS03643
NPN General Purpose Small Signal Amplifiers

PACKAGE
Vceo ... 30 V (Min) (PN/FTS03641, PN/FTS03643), 45 V (Min) (PN/FTS03642) hFE 100 (Min) @ 150 mA, 25 (Min) @ 500 mA (PN/FTS03643) PG .. 400 mW RF Power Out at 30 MHz iT ... 250 MHz (Min) (PN3643) ton . 60 ns (Max) @ 300 mA, toff . 150 ns (Max) @ 300 mA Complements ... MPS36381 A, PN3644
PN3641 PN3642 PN3643 FTS03641 FTS03642 FTS03643
TO-92 TO-92 TO-92 TO-236AAI AB TO-236AAI AB TO-236AAI AB
I
PN 0.625 W 1.0W FTSO 0.350 W*

Power Dissipation (Notes 2 & 3) Total Dissipation at 250 C Ambient Temperature 250 C Case Temperature Voltages & Currents
-55" C to 1500 C 1500C
Vc~o Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Collector Current Ic
3641/3 30V
3642
45V 60V 5.0V 500 rnA
60V 5.0V SOO rnA
3641 SYMBOL CHARACTERISTIC MIN MAX BVcEocsus, Collector to Emitter Breakdown 30 Voltage (Notes 4 & 5) BVcEs BVcBo BVEBO Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage 60 60 5.0
3642 MIN MAX 45 60 60 5.0
UNITS V V V V
TEST CONDITIONS Ie = 10 rnA, IB = 0 Ic = 10 p.A, VBE = 0 le=10p.A,IE=0 IE=10p.A,lc=0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum iunction temperature of 150"C and (T0-92) junction-to-case thermal resistance of 125CIW (derating factor of 8.0 mW/o C); junction-to-ambient thermal resistance of 200" CIW (derating factor of 5.0 mW/o C); (TO-236) junction-to-ambient thermal resistance of 357" C/W (derating factor of 2.8 mW/o C). 4. Rating refers to a high current pOint where collector to emitter voltage.is lowest. 5. Pulse conditions: length =300 I'S; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-147

SYMBOL CHARACTERISTIC Collector Cutoff Current ICES (Note 5) hFE VCEIsall DC Pulse Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Output Capacitance Magnitude of Common Emitter, Short Circuit Small Signal Current Gain Amplifier Power Gain (test circuit no. 238) 1.5 3641 MIN MAX 50 1.0 40 15 120 0.22 8.0 1.5 3642 MIN MAX 50 1.0 40 15 120 0.22 8.0 V pF UNITS nA IJ.A TEST CONDITIONS VCE = 50 V, VBE = 0 VCE = 50 V, VBE = 0, TA = 65C Ic = 150 mA, VCE = 10 V Ic = 500 mA, VCE = 10 V Ic = 150 mA, IB = 15 mA VCB=10V,IE=O,f=140kHz Ic = 50 mA, VCE = 5.0 V, f = 100 MHz dB (Zero Signal) VCE = 15 V, Ic = 0, RG = 140 n, RL = 260 n, f = 30 MHz, PIN =40 mW (Zero Signal) VCE = 15 V, Ic = 0, RG = 140 n, RL = 260 n, f = 30 MHz, PIN = 40 mW Ic = 300 mA, IBI = 30 mA, Ic = 300 mA, IBI = IB2 =30 mA
Cob
h,e
GPE
10
10
."
Collector Efficiency (test circuit no. 238)
60
60
ton to"
Turn On Time (test circuit no. 241) Turn Off Time (test circuit no. 242)
60 150
60 150
ns ns
SYMBOL CHARACTERISTIC BVCEOI.u., Collector to Emitter Breakdown Voltage (Notes 4 & 5) BVcEs BVcBo BVEBO icES Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current (Note 5)
3643 MIN MAX 30 60 60 5.0 50 1.0 100 25 300 0.22
UNITS V V V V nA IJ.A
TEST CONDITIONS Ic = 10 mA, IB = 0 Ic = 10 IJ.A, VBE = 0 Ic= 1O IJ.A,IE =0

IE=10~,lc=0
VCE = 50 V, VBE = 0 VCE = 50 V, VBE = 0, TA = 65C Ic = 150 mA, VCE = 10 V Ic = 500 mA, VCE = 10 V
hFE VCEIsall
DC Pulse Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5)
Ic = 150 mA, IB = 15 mA
3-148

SYMBOL CHARACTERISTIC Output Capacitance COb hie Magnitude of Common Emitter, Short Circuit Small Signal Current Gain 'Amplifier Power Gain (test circuit no. 238) 3643 MIN MAX 8.0 2.5 UNITS pF TEST CONDITIONS Ve6 = 10 V, IE = 0, f = 140 kHz Ie = 50 mA, VeE = 5.0 V, f=100MHz dB (Zero Signal) VeE = 15 V, Ie = 0, RG = 140 n, RL = 260 n, f = 30 MHz, PIN = 40 mW (Zero Signal) VeE = 15 V, Ie = 0, RG = 140 n, RL = 260 n, f = 30 MHz, PIN = 40 mW Ie Ie
GPE
10
7J
Collector Efficiency (test circuit no. 238)
60
ton toff
Turn On Time (test circuit no. 241) Turn Off Time (test circuit no. 242)
60 150
ns ns
= 300 mA, = 300 mA,
161 161
= 30 mA, = 162 = 30 mA
3-149
FAIRCHILD
PN3644/FTS03644 PN3645/FTS03645
VCEo ... -45 V (Min) (PN/FTS03644), 60 V (Min) (PN/FTS03645) hFE ... 80-240 @ 50 mA ton ... 40 ns (Max) @ 300 mA toft ... 100 ns (Max) @ 300 mA Complements ... PN3569
TO-92 TO-92
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Collector Current Ic
-55 C to 150 C 150 C
PN 0.625 W 1.0 W 3645 -tlOV -tlOV -5.0 V 500 rnA
FTSO 0.350 W*
3644 -45 V -45 V --5.0 V 500 rnA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVcBo BVEBo ICES Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Reverse Current (Note 5) 3644 MIN MAX -45 -5.0 35 35 2.0 2.0 hFE DC Current Gain 40 80 40 80 3645 MIN MAX -60 -5.0 UNITS V V nA nA }lA p.A TEST CONDITIONS Ic = 100 }lA. IE = 0 IE = 10 }lA, Ic = 0 VCE = -30 V, VBE = 0 VCE = --50 V, VBE = 0 VCE =-30V, VBE=O, TA=65C VCE = -50 V, VBE =0, TA =65 C Ic = 100 }lA, VCE = -10 V Ic = 1.0 mA, VCE = -10 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3 These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-to-case thermal resistance of 1250 C/W (derating factor of 8.0 mW/C): junction-to-ambient thermal resistance of 200CIW (derating factor of 5.0 mWI'C): (TO-236) junction-to-ambient thermal resistance of 357" C/W (derating factor of 2.8 mW;o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I's: duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T212. Package mounted on 99.5% alumina 8 mm x 8 mrn x 0.6 mrn.
3-150
PN3644/FTS03644 PN3645/FTS03645

SYMBOL hFE CHARACTERISTIC DC Pulse Current Gain (Note 5) 3644 MIN MAX 100 SO 100 20 240 300 3645 MIN MAX 100 SO 100 20 -60 -D.25 -D.4 -1.0 -1.0 -1.3 -2.0 S.O 35 2.0 40 100 2.0 40 100 ns ns -0.25 -D.4 -1.0 -1.0 -1.3 -2.0 S.O 35 240 300 V V V V V V V pF pF UNITS TEST CONDITIONS le=10mA,VeE=-10V Ie = 50 mA, VCE = 1.0 V Ie = 150 mA, VCE = -10 V Ic = 300 mA, VCE = -2.0 V Ie = 10 mA, 18 = 0 Ie = 50 mA, 18 = 2.5 mA Ie = 150 mA, 18 = 15 mA Ie = 300 mA, 18 = 30 mA Ie = 50 mA, 18 = 2.5 mA Ie = 150 mA, 18 = 15 mA Ic = 300 mA, 18 = 30 mA VC8 = -1 OV, IE=O, f=140kHz VE8 =-D.5V, Ic =0,f=140kHz Ic = 20 mA, VCE = -20 V, f = 100 MHz Ic 300 mA, 181 Vcc = -30 V Ic 300 mA, 181 Vcc = -30 V
VCEOISus) VCEIsat)
Collector to Emitter Sustaining -45 Voltage (Pulsed) (Notes 4 & 5) Collector to Emitter Saturation Voltage (Pulsed) (Note 5) Base to Emitter Saturation Voltage (Pulsed) (Note 5) -D.S Output Capacitance Input Capacitance High Frequency Current Gain Turn On Time (test circuit no. 246) Turn Off Time (test circuit no. 246)
V8EIsat)
-O.S
COb Cib hfe ton tOff
= 30 mA,
= 182 = 30 mA,
3-151
FAIRCHILD
PN/MPS/FTS03646 2N/FTS05772
NPN High Speed Saturated Logic Switches
VeEo ... 15 V (Min)

18 ns (Max) @ 10 mA ton .. 18 ns (Max) @ 300 mA tolf ... 28 ns (Max) @ 300 mA
T
PACKAGE
PN3646 MPS3646 2N5772 FTS03646 FTS05772
TO-92 TO-92 TO-92 TO-236AAI AB TO-236AAI AB

-55 C to 150 C 150C
MPS
FTSO
0.625 W 1.0W
0.350 W'
VeEo VeEs VeBo VEBO Ie
Collector to Emitter Voltage (Note 4) Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage Collector Current Pulse = 10 J.LS
15 V
40V
40V 5.0 V 200 mA 500 mA
SYMBOL CHARACTERISTIC MIN Collector to Emitter Breakdown Voltage 40 BVeEs BVEBO BVcBo ICES hFE Emitter to Base Breakdown Voltage Collector to Base Breakdown Voltage Collector Reverse Current DC Current Gain (Note 5) 30 25 15 5.0 40
MAX
UNITS V V V
TEST CONDITIONS Ie
0.5 120
pA
= 10 pA, VBE = 0 Ic = 0, IE = 100 pA Ic = 100 ~A, IE = 0 VCE = 20 V, VBE = 0 Ic = 30 mA, VCE = 0.4 V Ic = 100 mA, VCE = 0.5 V Ic = 300 mA, VCE = 1.0 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150' C and (T092) junction-to-case thermal resistance of 125' CIW (derating factor of 8.0 mW/'C); junction-to-ambient thermal resistance of 200'CIW (derating factor of 5.0 mW/oC); (T0236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mWI" C). 4. Rating refers to a high current point where coliector to emitter voltage is lowest. 5. Pulse conditions: length' 300 !'S; duty cycle' 1%. 6. For product family characteristic curves, refer to Curve Set T162. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-152
PN/MPS/FTS03646 2N/FTS05772

SYMBOL CHARACTERISTIC VeEOlsus) VeElsatl Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage (Note 5) MIN 15 0.20 0.28 0.5 0.3 0.95 1.2 1.7 5.0 8.0 3.5 18 18 28 ns ns ns MAX UNITS V V V V V TEST CONDITIONS Ie = 10 mA, 18 = 0 Ie = 30 mA, 18 = 3.0 mA Ie = 100 mA, 18 = 10 mA Ie = 300 mA, 18 = 30 mA Ie = 30 mA, 18 = 3.0 mA, TA = 65C Ie = 30 mA, 18 = 3.0 mA k=100mA,1 8 =10mA Ie = 300 mA, 18 = 30 mA Ve8 = 5.0 V, IE = 0, f = 140 kHz V8E = 0.5 V, Ie = 0, f = 140 kHz Ie = 30 mA, VeE = 10 V, f = 100 MHz
Ii
I I
V8EIsatl
Base to Emitter Saturation Voltage (Note 5) Output Capacitance Emitter Transition Capacitance High Frequency Current Gain Charge Storage Time Constant (test circuit no. 3111) Turn On Time (test circuit no. 233) urn Off Time (test circuit no. 233)
0.75
V V V pF pF
Cob CTE hie Ts ton toll
Ie = 181 = -182 = 10 mA, Vee = 10 V

Ie = 300 mA, 181 =30 mA, Vee = 10V Ie = 300 mA, 181 = -1 82 = 30 mA, Vee=10V
3-153
FAIRCHILD
PN3693/FTS03693 PN3694/FTS03694
VCEO ... 45 V (Min) hFE ... 100-400 (PN/FTS03694)
PACKAGE
APG ... 55 dB (Typ) @ 455 kHz

Gc ... 20 dB (Typ) from 108 MHz to 10.7 MHz NF ... 4.0 dB (Typ) @ 1.0 MHz
Complements ... PN4121, PN4122
PN3693 PN3694 FTS03693 FTS03694
TO-92 TO-92

-55 C to 150 C 150C
Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature

Voltages & Currents
PN
FTSO
0.625 W 1.0W
0.350 W*
VCEO VCBo VEBO Ic
Collector to Emitter Voltage (Note 4) Collector to Base Voltage Emitter to Base Voltage Collector Current
45 V 45 V 4.0V 30 mA
SYMBOL CHARACTERISTIC BVcBo BVEBo lEBO ICBO hFE

VCEO(susl
3693 MIN MAX 45 4.0 100 50 5.0 40 45 160
3694 MIN MAX 45 4.0 100 50 5.0 100 45 400
UNITS V V IJ.A nA IJ.A V Ic IE
TEST CONDITIONS
Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Pulse Current Gain (Note 5) Collector to Emitter Sustaining Voltage (Note 5)
= 0.1
mA, IE
=0
= 100 IJ.A,
Ic = 0
VEB = 4.0 V, Ic = 0 VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 65 C Ic = 10 mA, VCE = 10 V Ic
= 10 mA
(pulsed), IB = 0
NOTES: 1. These ratings are limiti ng values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-to-case thermal resistance of 1250 C/W (derating factor of 8.0 mWfO C); junction-to-ambient thermal resistance of 2000 CIW (derating factor of 5.0 mW/o C); (TO-236) junction-to-ambient thermal resistance of 357 0 CIW (derating factor of 2.8 mWfO C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 !,s; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T144. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-154
PN3693/FTS03693 PN3694/FTS03694

SYMBOL CHARACTERISTIC COb hfe rb'C C Output Capacitance High Frequency Current Gain Collector Base Time Constant 3693 MIN MAX 0.5 2.0 6.0 5.0 55 3694 MIN MAX 0.5 2.0 6.0 5.0 55 ps UNITS pF TEST CONDITIONS VCB = 10 V, IE =0, f =1.0MHz Ic = 10 mA, VeE = 15 V, f = 100 MHz Ie = 10 mA, VeE = 15 V, f = 80 MHz
3-155
FAIRCHIL.D
PN4121/FTS04121 PN41221FTS04122
PACKAGE
PN4121 PN4122 FTS04121 FTS04122 TO-92 TO-92
VCEO ... 40 V (Min) hFE ... 150-300 @ 10 mA (PN/FTS04122)
h ... 450 MHz (Min) @ 10 mA (PN/FTS04122)

rb'C C
'" 50 ps (Max) Cob ... 4.5 pF (Max) NF ... 6.0 dB (Max) @ 100 MHz

Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 70 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) Vceo Collector to Base Voltage VEeo Emitter to Base Voltage Ic Collector Current
-55 C to 150 C 150C
PN
0.625 W 0.400 W 1.0W
FTSO
0.350 W*
-40 V -40 V -5.0 V 100 mA

SYMBOL CHARACTERISTIC BVcEs BVceo BVEeo ICES hFE 4121 MIN MAX 4122 MIN MAX -40 -40 -50.0 25 25 40 60 100 150 25 25 UNITS V V V nA p,A TEST CONDITIONS Ic = 10 p,A, VeE = 0 Ic = 10 p,A, IE = 0 IE = 10 p,A, Ic = 0 VCE = -30 V, VeE = 0 VCE =-30V, VeE=O, TA=65C Ic = 100 p,A, VCE = -1.0 V Ic = 1.0 mA, VCE = -1.0 V
Collector to Emitter Breakdown -40 Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Reverse Current DC Current Gain -40 -5.0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (TO-92) junction-to-case thermal resistance of 125' C/W (derating factor of 8.0 mW/' C); junction-to-ambient thermal resistance of 200' C/W (derating factor of 5.0 mW/' C); (TO-236) junction-to-ambient thermal resistance of 357' CIW (derating factor of 2.8 mWI' C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length ~ 300 I'S; duty cycle ~ 1%. 6. For product family characteristic curves, refer to Curve Set T215. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-156
PN4121/FTS04121 PN41221FTS04122

SYMBOL CHARACTERISTIC DC Pulse Current Gain hFE (Note 5) VCEOISUS) VCElSatl Collector to Emitter Sustaining Voltage (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Open Circuit Input Capacitance Magnitude 01 Small Signal Current Gain Forward Current Transler Ratio Input Resistance Output Conductance Voltage Feedback Ratio Collector to Base Time Constant Turn On Time (test circuit no. 342) Turn Off Time (see test circuit no. 342) Noise Figure 4.0 50 1.0 2.0 300 8.0 24 3.0 50 40 150 6.0 4.0 4121 MIN MAX 70 15 -40 -<l.13 -0.14 -0.3 -<l.75 -<l.7 -<l.g -1.1 4.5 8.0 4.5 150 4.0 8.0 450 12 40 4.0 50 40 150 6.0 4.0 k!1 JLmho X1o-4 ps ns ns dB dB -0.7 200 4122 MIN MAX 150 30 -40 -0.13 -<l.14 -0.3 -0.75 -<l.g -1.1 4.5 8.0 300 V V V V V V V pF pF UNITS TEST CONDITIONS Ie = 10 rnA, VCE = -1.0 V Ic = 50 rnA, VCE = -1.0 V Ic = 10 rnA, la = 0 Ie = 1.0 rnA, la = 0.1 rnA Ic = 10 rnA, la = 1.0 rnA Ic = 50 rnA, la = 5.0 rnA Ie = 1.0 rnA, la = 0.1 rnA Ic=10mA,la=1.0mA Ie = 50 rnA, la = 5.0 rnA Vca = -10 V, IE = 0 VEa = -<l.5 V, Ic = 0 Ic = 10 rnA, Vee = -20 V, 1= 100 MHz Ie = 1.0 rnA, VCE = -10 V, 1= 1.0 kHz Ic = 1.0 rnA, VCE = -10 V, 1= 1.0 kHz Ie = 1.0 rnA, VCE = -10 V, 1= 1.0 kHz Ie = 1.0 rnA, VCE = -10 V, 1= 1.0 kHz1 Ie = 10 rnA, VCE = -20 V, 1= 80 MHz
VaElsatl
CCb Cib
Ihlel
hie hie hoe hre rb'Cc
ton toll
NF
Ie = 50 rnA, la1 = 5.0 rnA,

Ie = 50 rnA, la1 = 5.0 rnA, la2 = 5.0 rnA Ic = 1.0 rnA, VCE = -5.0 V, 1= 100 MHz, BW = 15 MHz, Rs=100!1 Ie = 100 JLA, VCE =0 -5.0 V, BW = 15 MHz, Rs = 1.0 k!1 f = 10Hz to 10kHz
3-157
FAIRCHILO
PN4248/FTS04248 PN4249/FTS04249 PN4250/FTS04250 PN4250A/FTS04250A

PACKAGE PN4248 PN4249 PN4250 PN4250A FTS04248 FTS04249 FTS04250 FTS04250A
PNP Low Level Low Noise Amplifiers

TO-92 TO-92 TO-92 TO-92 TO-236AAI AB TO-236AAI AB TO-236AAI AB TO-236AAI AB
VCEO ... 40 V (Min) (PN4248/S0); 60 V (Min) (PN4249/S0A) h FE ... 2S0-700 @ 100 Jl.A (PN42S0/S0A) NF ... 2.0 dB (Max) @ 1.0 kHz (PN42S0/S0A) Excellent Beta Linearity from 1.0 Jl.A to 50 mA
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEo Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VCES Collector to Emitter Voltage VEBO Emitter to Base Voltage
-55" C to 150 C 1500 C
PN 0.625 W 1.0W 4248/S0 -40 V -40 V -40 V -5.0 V
FTSO 0.350 W*
4249/S0A -60 V -60 V -60 V -5.0 V
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVCES BVCBO BVEBO lEBO ICBO hFE hFE 4248 MIN MAX Collector to Emitter Breakdown -40 Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain DC Pulse Current Gain (Note 5) 50 50 50 -40 -5.0 20 10 3.0 100 100 100 4249 MIN MAX -60 -60 -5.0 20 10 3.0 300 UNITS V V V nA nA TEST CONDITIONS IE = 10 Jl.A, Ic = 0 Ic = 10
JJ.A,
IE = 0
IE = 10Jl.A, Ic=O VEB = -3.0 V, Ic = 0 VCB = -40 V, IE = 0 VCB =-40V, IE=O, TA=65C Ic = 100 Jl.A, VCE = -5.0 V Ic = 1.0 mA, VCE = -5.0 V Ic = 10 mA, VCE = -5.0 V
JJ.A
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (T0-92) junction-to-case thermal resistance of 125' ClW (derating factor of 8.0 mW/' C); junction-to-ambient thermal resistance of 200" C/W (derating factor of 5.0 mWI' C); (TO-236) junction-to-ambient thermal resistance of 357" CIW (derating factor of 2.8 mW/' C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length 0 300 I'S; duty cycle 0 1'Io. 6. For product family characteristic curves, refer to Curve Set T219. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-158
PN4248/FTS04248/PN4249/FTS04249 PN4250/FTS04250 PN4250AlFTS04250A

SYMBOL CHARACTERISTIC VCEOiSUS) VCEisatl V8Eisatl COb Cib hfe hfe hie hoe hre NF Collector to Emitter Sustaining Voltage (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance Input Capacitance High Frequency Current Gain Small Signal Current Gain Input Resistance Output Conductance Voltage Feedback Ratio Wide Band Noise Figure 2.0 50 1000 4248 MIN MAX -40 -0.25 -0.9 6.0 16 2.0 100 2.5 5.0 550 17 40 10 3.0 k!l
~mhos
4249 MIN MAX -60 -0.25 -0.9 6.0 16
UNITS V V V pF pF
TEST CONDITIONS Ic = 5.0 rnA (pulsed), 18 = 0

I
Ic = 10 rnA, 18 = 0.5 rnA Ic = 10 rnA, 18 = 0.5 rnA Ve8 =-5.0V, IE =0, f =1.0MHz V8E =-0.5 V, Ic=O, f =1.0MHz Ic = 0.5 rnA, VCE = -5.0 V, f = 20 MHz Ie = 1.0 rnA, VCE = -5.0 V, f = 1.0 kHz Ie = 1.0 rnA, VCE = -5.0 V, f = 1.0 kHz Ie = 1.0 rnA, VCE = -5.0 V, f=1.0kHz Ie = 1.0 rnA, VeE = -5.0 V, f = 1.0 kHz
X10-4 dB
Ie = 20 ~A, VeE = -5.0 V, f= 10Hzto 10kHz, As = 10k!l PBW = 15.7 kHz

Ie = 20 ~A, VeE = -5.0 V, f = 1.0 kHz, As = 10 k!l PBW = 150 Hz Ie = 250 ~A, VCE = -5.0 V, f = 1.0 kHz, Rs = 1.0!l PBW = 150 Hz
NF
Narrow Band Noise Figure
3.0 3.0
dB
dB
3-159
PN4248/FTS04248/PN4249/FTS04249 PN4250/FTS04250 PN4250AlFTS04250A
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unl.ess otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Collector to Emitter Sustaining VCEO(susl Voltage (Note 5) VCEISa!) VBEISa!) Cob Gb h'e h,e hie hoe hre NF Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance Input Capacitance High Frequency Current Gain Small Signal Current Gain Input Resistance Output Conductance Voltage Feedback Ratio Wide Band Noise Figure 2.5 250 6.0 5.0 800 20 50 10 2.0 250 6.0 5.0 800 20 50 10 2.0 kO /lmhos X10-4 dB 4250 MIN MAX --40 -{).25 4250A MIN MAX --60 -0.25 UNITS V V V 6.0 pF pF TEST CONDITIONS Ic = 5.0 mA (pulsed). IB = 0 Ic = 10 mA, IB = 0.5 mA Ic = 10 mA, IB = 0.5 mA VCB=-5.0V,IE=O, f=1.0MHz VBE =-{).5 V, Ic =0, f =1.0MHz Ic = 0.5 mA, VCE = -5.0 V, f = 20 MHz Ic = 1.0 mA, VCE = -5.0 V, f = 1.0 kHz Ic = 1.0 mA, VCE = -5.0 V, f=1.0kHz Ic = 1.0 mA, VCE = -5.0 V, f= 1.0 kHz Ic = 1.0 mA, VCE = -5.0 V, f = 1.0 kHz Ic = 20 /lA, VCE = -5.0 V, f = 1OHzto 10kHz, Rs= 10kO PBW = 15.7 kHz Ic = 20 /lA, VCE = -5.0 V, f = 1.0 kHz, Rs = 10 kO PBW = 150 Hz Ic = 250 /lA, VCE = -5.0 V, f = 1.0 kHz, Rs = 1.0 kO PBW = 150 Hz IE = 10 /lA, Ic = 0 Ic = 10 /lA, IE = 0 IE = 10 /lA, Ic = 0 VEB = -3.0 V, Ic = 0 VCB = --40 V, Ie = 0 VCB = -50 V, IE = 0 VCB = --40 V, IE = 0, TA =650 C Ic = 100 /lA, VCE = -5.0 V Ic = 1.0 mA, VCE = -5.0 V Ic = 10 mA, VCE = -5.0 V
-D.9
6.0 16
NF
2.0 2.0
2.0
dB dB
2.0
BVcEs BVcBo BVEBO lEBO ICBO
Collector to Emitter Breakdown -40 Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current -40 -5.0 20 10
--60 --60 -5.0 20
V V V nA nA nA /lA
10 3.0 hFE hFE DC Current Gain 250 250 700 250 700
DC Pulse Current Gain (Note 5) 250
3-160
FAIRCHILO
PN4258/FTS04258
PNP Small Signal Ultra High Speed Logic Switch
VeEo ... 12 V (Min) hFE ... 30-120 @ 10 mA ton ... 15 ns (Max) @ 10 mA Complement ... 2N/FTS05769
TO-92 TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures -55 C to 150 C Storage Temperature 150C Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) Veao Collector to Base Voltage VEao Emitter to Base Voltage Ie Collector Current
I
FTSO 0.350 W
PN 0.625 W 1.0W
-12 V -12 V -4.5 V 50 mA
SYMBOL CHARACTERISTIC Collector to Base Breakdown Voltage BVeao BVEao BVeEs ICES hFE Emitter to Base Breakdown Voltage Collector Reverse Current DC Current Gain (Note 5)
MIN -12 -4.5
MAX
UNITS V V V
TEST CONDITIONS
Collector to Emitter Breakdown Voltage -12 10 5.0 30 15 30 120
nA
p.A
= 100 /-LA, IE = 0 IE = 100 /-LA, Ie = 0 Ic = 100 /-LA, VCE = 0 VCE = --6.0 V, VaE = 0 VCE = --6.0 V, VaE = 0, TA = 65C Ie = 10 mA, VCE = -3.0 V Ic = 1.0 mA, VCE = -0.5 V Ic = 50 mA, VCE = -1.0 V
Ie
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150' C and (TO-92) junction-to-case thermal resistance of 125' ClW (derating factor of 8.0 mW/' C); junction-to-ambient thermal resistance of 200' CIW (derating factor of 5.0 mW/' C); (TO-236) junction-to-ambient thermal resistance of 357' CIW (derating factor of 2.8 mW/' C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 "s; duty cycle = 1%. 6. For product family characteristic curves. refer to Curve Set T292. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-161
PN4258/FTS04258

SYMBOL CHARACTERISTIC VeE(Satl VeEO(SuS) VBE(satl Ccb C,b Collector to Emitter Saturation Voltage (Note 5) Collector to Emitter Sustaining Voltage (Notes 4 & 5) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Input Capacitance Magnitude of Small Signal Current Gain Turn On Time (test circuit no. 348) Turn Off Time (test circuit no. 348) Charge Storage Time (test circuit no. 234) 7.0 5.0 15 20 20 ns ns ns -12 -0.75 -0.95 -1.5 3.0 3.5 MIN MAX -0.15 -0.5 UNITS V V V V V pF pF TEST CONDITIONS le=10mA,IB =1.0mA Ie = 50 mA, IB = 5.0 mA
Ie = 3.0 mA, IB = 0
Ie = 10 mA, IB = 1.0 mA Ie = 50 mA, IB = 5.0 mA VeB = -5.0 V, IE = 0 VEB = -5.0 V, Ie = 0 Ie = 10 mA, VeE = -10V, f = 100MHz le= 10 mA, VeE =-5.0V, f=100MHz
I hfel
ton tOff Ts
= 10 mA, = 10 mA, Ie = 10 mA,

Ie Ie
IS1 181 IB1
= 1.0 mA = -I B2 = 1.0 mA = -I B2 = 10 mA
3-162
FAIRCHILD
PN4274/FTS04274 PN4275/FTS04275
NPN Small Signal High Speed Saturated Switches
VeEo ... 12 V (Min) (PN/FTS04274), 15 V (Min) (PN/FTS04275) VeElsatl ... 0.2 V (Max) @ 10 mA h ... 400 MHz (Min) C eb 4.0 pF (Max) @ 5.0 V Ts 13 ns (Max) @ 10 mA ton and toft ... 12 ns (Max) @ 10 mA Complement ... PN3640
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 250 C Ambient Temperature 25 0 C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VeBo Collector to Base Voltage VeEs Collector to Emitter Voltage VEBO Emitter to Base Voltage Collector Current (10 jJ.s pulse) Ie Collector Current Ie
I
0
-55 C to 150 C 1500 C

0
PN 0.625 W 1.0W 4274 12 V 30 V 30 V 4.5 V 500 mA 100 mA
FTSO 0.350 W*
4275 15 V 40 V 40 V 4.5 V 500 mA 100 mA
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVeEs BVeBo BVEBo Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage 4274 MIN MAX 30 30 4.5 4275 MIN MAX 40 40 4.5 UNITS V V V TEST CONDITIONS le=10jJ.A,VBE=0 Ie = 10 jJ.A, IE = 0 IE =10jJ.A,le=0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2 These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-tocase thermal resistance of 1250 C/W (derating factor of 8.0 mWr C); junction-to-ambient thermal resistance of 200" C/W (derating factor of 5.0 mWr C); (TO-236) junction-toambient thermal resistance of 357 0 CIW (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ~s; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T162. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-163
PN4274/FTS04274 PN4275/FTS04275

SYMBOL CHARACTERISTIC Collector Cutoff Current ICBo leES hFE Collector Reverse Current DC Pulse Current Gain 35 30 18 12 0.20 0.18 0.25 0.50 0.30 0.72 0.74 0.85 1.00 1.15 1.60 4.0 4.0 13 12 12 4.0 13 12 12 ns ns ns 0.72 0.74 4274 MIN MAX 10 400 120 35 30 18 15 0.20 0.18 0.25 0.50 0.30 0.85 1.00 1.15 1.60 4.0 4275 MIN MAX 10 400 120 UNITS p.A nA VCB VCE TEST CONDITIONS
= 20 V, = 20 V,
IE
VBE
Ie = 10 mA, Ie = 30 mA, VeE = 0.4 V Ic = 100 mA, VeE = 1.0 V V V V V V V V V V V pF
= 0, T A= 65 C =0 VeE = 1.0 V
VCEO(SUS)
Collector to Emitter Sustaining Voltage (Note 5) Collector to Emitter Saturation Voltage (Note 5)
Ie = 10 mA (pulsed), IB = 0 Ie = 10 mA, IB = 1.0 mA Ie = 10 mA, Is = 3.3 mA Ie = 30 mA, Is = 3.0 mA Ie = 100 mA, Is = 10 mA Ie = 10 mA, Is = 1.0 mA, TA=65C Ie Ie Ie Ie = = = = 10 mA, Is = 1.0 mA 10 mA, Is = 3.3 mA 30 mA, Is = 3.0 mA 100 mA, Is = 10 mA
VeE(Sa!)
VSE(sa!)
Base to Emitter Saturation Voltage (Note 5)
CCb hfe
Ts
Collector to Base Capacitance High Frequency Current Gain Charge Storage Time Constant (test circuit no. 3111) Turn On Time (test circuit no. 381) Turn Off Time (test circuit no. 381)
Ves = 5.0 V, IE = 0 Ie = 10 mA, VeE = 10 V, f = 100 MHz Ie = IS1 = -ls2 = 10 mA, Ie = 10 mA, IS1 = 3.3 mA Ie = 10 mA, IS1 = IS2 = 3.3 mA
ton tOff
3-164
FAIRCHILD
PN4354/FTS04354 PN4355/M PS4355/FTS 04355 PN4356/MPS4356/FTS04356

PNP General Purpose Amplifiers
PACKAGE PN4354 PN4355 PN4356 MPS4355 MPS4356 FTS04354 FTS04355 FTS04356
Vceo ... -60 V (Min) (PN4354, PN/MPS4355), -80 V (Min) (PN/MPS4356) VCElsall ... -1.0 V (Max) @ Ic = 1.0 A (PN/MPS4355) NF ... 3.0 dB (Max) at 1.0 kHz Complements ... PN3567, PN3569
TO-92 TO-92 TO-92 TO-92 TO-92
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
TO-236AAI AB TO-236AAI AB TO-236AAI AB
-55 C to 150" C 150" C
PN/MPS 0.625 W 1.0W

4354/5
FTSO 0.350 W'
-GO V -GO V
-5.0 V SOO rnA
4356 -BOV -BOV -5.0 V 500 rnA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Collector to Base Breakdown BVCBO Voltage BVEBO lEBO ICBO Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current 4354 MIN MAX 4355 MIN MAX UNITS V V 100 50 5.0 60 75 100 75 75 nA nA JJ.A Ic IE TEST CONDITIONS
-GO
-5.0 100 50 5.0 25 40 50 40 30
-GO
-5.0
= 10 JJ.A, = 10 JJ.A,
IE Ic
=0 =0
Ic
VEB
= -4.0 V,
VCB = -50 V, IE VCB = -50 V, IE TA = 75C Ic Ic Ic Ic Ic
=0 =0 = 0,
hFE
DC Pulse Current Gain (Note 5)
500
400
= 100 JJ.A, VCE = -10 V = 1.0 rnA, VCE = -10 V = 10 rnA, VCE = -10 V = 100 rnA, VCE = -10 V = 500 rnA, VCE = -10 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150' C and (TO-92) junction-to-case thermal resistance of 1250 C/W (derating factor of 8.0 mW/o C): j unction-to-ambient thermal resistance of 200' CIW (derating factor of 5.0 mW/o C); (TO-236) j unction-to-ambient thermal resistance of 357" CIW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length; 300 jls: duty cycle; 1%. 6. For product family characteristic curves, refer to Curve Set T224. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-165
PN4354/FTS04354 PN4355/MPS4355/FTS04355 PN4356/MPS4356/FTS04356

SYMBOL CHARACTERISTIC Collector to Emitter Sustaining VCEO{SUS) Voltage (Note 5) VCElsall Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 3) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Emitter to Base Capacitance Magnitude of Common Emitter Small Signal Current Gain Turn On Time (test circuit no. 341) Turn Off Time (test circuit no. 341) Noise Figure 1.0 4354 MIN MAX -60 -{l.15 -{l.5 -1.1 -{l.g -1.1 30 110 5.0 100 400 3.0 1.0 4355 MIN MAX -60 -0.15 -{l.5 -1.0 -1.1 -1.2 -{l.g -1.1 -1.2 30 110 5.0 100 400 3.0 ns ns dB UNITS V V V V V V V V V pF pF TEST CONDITIONS Ic = 10 mA (pulsed), Is = 0 Ic = 150 mA, Is = 15 mA Ic = 500 mA, Is = 50 mA Ic = 1.0 mA, Is = 100 mA Ic = 500 mA, VCE = -{l.5 V Ic = 1.0 A, VCE = -1.0 V Ic = 150 mA, Is = 15 V Ic = 500 mA, Is = 500 mA Ic = 1.0 A, Is = 100 mA Vcs =-1 OV,IE=0, f=1.0MHz VSE =-{l.5 V,lc =0, f= 1.0MHz Ic = 50 mA, VCE = -10 V, f = 100 MHz Ic = 500 mA, IS1 Vcc = -30 V
VSEIONI VSElsall
Ccb Cab
Ihlel
ten
toll NF
= 50 mA,
Ic = 500 mA, IS1 = IS2 = 50 mA, Vcc = -30 V Ic = 100 p.A, VCE = -10 V, f = 1.0 kHz, BW = 1.0 Hz, Rs = 1.0 kfl
SYMBOL CHARACTERISTIC BVcso BVESO IESO ICBO Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current
4356 MIN MAX -60 --5.0 100 50 5.0 25 40 50 40 30
UNITS V V nA nA p.A
TEST CONDITIONS Ic = 10 p.A, IE = 0 IE = 10 p.A, Ic = 0 VES = -4.0 V, Ic = 0 Vcs = -50 V, IE = 0 Vcs = -50V, IE = 0, TA = 75C Ic = 100 p.A, VCE = -10 V Ic = 1.0 mA. VCE = -10 V Ic=10mA,Vce =-10V Ie = 100 mA, VCE = -10 V Ic = 500 mA, VCE = -10 V
hFE
250
3-166
PN4354/FTS04354 PN4355/MPS4355/FTS04355 PN4356/MPS4356/FTS04356

SYMBOL CHARACTERISTIC VCEO(SuSI VCE(satl V8E(ONI V8E(Satl Ccb Cab 1hlel ton toll NF Collector to Emitter Sustaining Voltage (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 3) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Emitter to Base Capacitance Magnitude of Common Emitter Small Signal Current Gain Turn On Time (test circuit no. 341) Turn Off Time (test circuit no. 341) Noise Figure 1.0 4356 MIN MAX -80 -0.15 -0.5 -1.1 -0.9 11.1 30 110 5.0 100 400 3.0 ns ns dB UNITS V V V V V V pF pF TEST CONDITIONS Ic = 10 rnA (pulsed), 18 = 0 Ic = 150 rnA, 18 = 15 rnA Ic = 500 rnA, 18 = 50 rnA Ic = 500 rnA, VeE = -0.5 V Ic = 150 rnA, 18 = 15 V Ic = 500 rnA, 18 = 500 rnA VC8 = -10 V, IE = 0, f = 1.0 MHz V8E = -0.5 V, Ie = 0, f = 1.0 MHz Ic = 5d rnA, VCE = -10 V, f = 100 MHz Ie "" 500 rnA, 181 "" 50 rnA, Vcc=-30V Ie "" 500 rnA, 181 "" 182 = 50 rnA, Vcc = -30 V Ie = 100 IJ.A, VCE = -10 V, f = 1.0 kHz, BW = 1.0 Hz, Rs = 1.0 k!l
3-167
FAIRCHILD
PN4888/FTS04888 PN4889/FTS04889
PNP Low Noise High Voltage Amplifiers
VeEo ... 150 V (Min) hFE ... 80300 @ 10 mA (PN/FTS04889) COb ... 4.0 pF (Max) NF ... 3.0 dB (Max) @ 1.0 kHz (PN/FTS04889) Excellent Beta linearity from 10 p,A to 50 mA
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VeBo Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current
-55 C to 150" C 150" C
PN 0.625 W 1.0W
FTSO 0.350 W'
-150 V -150 V
~.OV
100 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 4888 SYMBOL CHARACTERISTIC MIN MAX Collector to Emitter Breakdown -150 BVeEs Voltage BVcBo BVEBO lEBO ICBO Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current -150 -0.6 50 50 2.5 4889 MIN MAX -150 -150 -0.6 10 10 0.5 UNITS V V V nA nA p,A TEST CONDITIONS Ic = 100 p,A, IB = 01 Ic = 100 p,A, IE = 0 IE = 10 p,A, Ic = 0 VEB = -4.0 V, Ic = 0 VCB = -100 V, IE = 0 VCB = -100V, IE =0, TA=65 C
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (TO92) junctiontocase thermal resistance of 125" C/W (derating factor of 8.0 mW/" C); junction-to-ambient thermal resistance of 200" CIW (derating factor of 5.0 mWI" C); (TO-236) junction-to-ambient thermal resistance of 357" CIW (derating factor of 2.8 mW/" C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T232. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-168
PN4888/FTS04888 PN4889/FTS04889

SYMBOL hFE CHARACTERISTIC DC Pulse Current Gain (Note 5) 30 40 VCEOiSUS) VCEiS"1l VSEiON) VSEiS"1l Cob Cib hfe hfe Collector to Emitter Sustaining -150 Voltage Collector to Emitter Saturation Voltage (Pulsed) (Note 5) Base to Emitter "On" Voltage (Pulsed) (Note 5) Base to Emitter Saturation Voltage (Pulsed) (Note 5) Output Capacitance Input Capacitance High Frequency Current Gain Common Emmitter Small Signal Current Gain Forward Current Transfer Ratio Small Signal Short Circuit Input Resistance Small Signal Open Circuit Output Conductance Small Signal Open Circuit Reverse Voltage Feedback Ratio Wide Band Noise Figure 1.5 30 -0.5 -0.8 -0.9 4.0 30 8.0 500 2.0 65 400
MIN
4888 MAX
MIN
60 70 80
4889 MAX
UNITS
TEST CONDITIONS Ic = 100 JJ.A, VCE = -10 V Ic = 1.0 rnA, VCE = -10 V Ic = 10 rnA, VCE = -10 V
300 V -0.5 -0.7 -0.9 4.0 25 8.0 400 V V V pF pF
-150
Ic = 2.0 rnA, Is = 0 Ic = 10 rnA, Is = 1.0 rnA Ic = 1.0 rnA, VCE = -10 V Ic = 10 rnA, Is = 1.0 rnA Vcs = -20V,IE =0, f= 1.0MHz VsE =-o.5V,l c =O,f=1.0MHz Ic = 1.0 rnA, VCE = -10 V, f = 20 MHz Ic = 1.0 rnA, VCE = -10 V, f = 1.0 kHz
hie hoe hre
0.75 1.4
20 40
1.7 3.0
12 25 5
kfl. JJ.mhos x10-4
Ic = 1.0 rnA, VCE = -10 V, f = 1.0 kHz Ic = 1.0 rnA, VCE = -10 V, f = 1.0 kHz Ic = 1.0 rnA, VCE = -10 V, f= 1.0 kHz Ic = 250 JJ.A. VCE = -5.0 V, f = 10 Hz to 10 kHz, As =1.0 kfl., BW = 15.7 kHz Ic = 250 JJ.A, VCE = -5.0 V, Rs = 1.0 kfl., f = 100 Hz, BW = 15 Hz Ic = 30 JJ.A, VCE = -5.0 V, Rs = 1.0 kfl., f = 1.0 kHz, BW = 150 Hz Ie = 250 JJ.A, VCE = -5.0 V, Rs = 1.0 kfl., f = 10 kHz, BW = 1.5 kHz Ic = 1.0 rnA, VCE = -10 V, As = 1.0 kfl., f = 1.0 MHz, BW = 2.0 kHz
NF NF
4.0
dB
10
dB
3.0
dB
3.0
dB
4.0
dB
3-169
FAIRCHILD
PN4916/FTS04916 PN4917/FTS04917
Veeo ... 30 V (Min) hFE ... 150-300 @ 10 rnA fr ... 450 MHz (Min) @ 10 rnA Ccb ... 4.5 pF (Max) rb'C C 50 ps (Max) Complements ... 2N3903, 2N3904
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures -550 C to 1500 C Storage Temperature 150C Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VeBo Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current
PN 0.625 W 1.0W
FTSO 0.350 W'
-30 V -30 V -5.0 V 100 mA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 4916 SYMBOL CHARACTERISTIC MIN MAX Collector to Em itter Breakdown -30 BVeEs Voltage BVeBo BVEeo ICES Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Reverse Current -30 -5.0 25 25 4917 MIN MAX -30 -30 -5.0 25 25
\
UNITS V V V nA p,A
TEST CONDITIONS Ie Ie Ie
= 10 p,A, VBe = 0 = 10 p,A, = 10 p,A,

IE = 0 Ie
=0
VeE = -15 V, VEe = 0 VeE = -15 V, VEe =0, TA =650 C
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (TO-92) junction-to-case thermal resistance of 1250 CIW (derating factor of 8.0 mWfO C); junction-to-ambient thermal resistance of 200" C/W (derating factor of 5.0 mWfO C); (TO-236) junction-to-ambient thermal resistance of 3570 C/W (derating factor of 2.8 mW/' C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S; duty cycle = 1%. 6. For product family characteristic curves. refer to Curve Set T215. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-170
PN4916/FTS04916 PN4917/FTS04917
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC DC Current Gain hFE hFE VCEOlsuSl VCElsatl VCElsatl VeElsatl VeElsatl CCb Ceb DC Pulse Current Gain (Note 5) Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage Pulsed Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage Base to Emitter Saturation Voltage (Pulsed) (Note 5) Collector to Base Capacitance Emitter to Base Capacitance Magnitude of Small Signal Current Gain Collector to Base Time Constant Turn On Time (test circuit no. 407) Turn Off Time (test circuit no. 407) Noise Figure 4.0 50 40 150 6.0 4.0 -0.7 -0.75 4916 MIN MAX 40 60 70 15 -30 -0.13 -0.14 -0.3 -0.75 -0.9 -1.1 4.5 8.0 4.5 50 40 150 6.0 4.0 ps ns ns dB dB -0.7 -0.75 200 4917 MIN MAX 100 150 150 30 -30 -0.13 -0.14 -0.3 -0.75 -0.9 -1.1 4.5 8.0 300 V V V V V V V pF pF UNITS Ic Ic TEST CONDITIONS VCE = -1.0 V VCE = -1.0 V
= 100 J1.A, = 1.0 mA,
Ic = 10 mA, VCE = -1.0 V Ic = 50 mA, VCE = -1.0 V Ic = 10 mA, Ie = 0 (pulsed) Ic = 1.0 mA, Ie = 0.1 mA Ic=10mA,le=1.0mA Ic = 50 mA, Ie = 5.0 mA Ic = 1.0 mA, Ie = 0.1 mA Ic = 10 mA, Ie = 1.0 mA Ic = 50 mA, Ie = 5.0 mA VCE = -10 V, IE = 0 VEe
= -0.5 V,
Ic = 0
Ih,el
rb'Cc ton toff NF
Ic = 10 mA, VCE = -20 V, f = 100 MHz Ic = 10 mA, VCE = -20 V, f = 80 MHz Ic = 50 mA, let = 5.0 mA, Ic = 50 mA, leI = 5.0 mA, Ic = 1.0 mA, VCE = -5.0
V,
As = 100 kO, BW = 15 MHz,

f = 100 MHz Ic = 100 J1.A, VCE = -5.0 V, Rs = 1.0 kO, BW = 15.7 kHz, 3.0 dB Pts A 10 Hz & 10 kHz
3-171
FAIRCHILO
PN5128/FTS05128
NPN Small Signal General Purpose Amplifiers & Switches
hFE ... 35 (Min) @ 50 mA, 20 (Min) @ 10 mA IT ... 150 MHz (Min) @ 50 mA ton ... 14 ns (Typ) @ 300 mA, toff ... 80 ns (Typ) @ 300 mA VCE(satl ... -0.25 V (Max) @ 150 mA, -0.35 V (Typ) @ 500 mA
TO-92 TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55 0 C to 1500 C 1500 C Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 250 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage
PN 0.625 W 1.0 W
FTSO 0.350 W*
12 V 15 V 3.0 V
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) BVcBo BVcEs ICBO lEBo hFE SYMBOL CHARACTERISTIC Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Pulse Current Gain (Note 5) 20 35 MIN 15 3.0 15 50 1.0 10 350 MAX UNITS V V V nA pA ]LA TEST CONDITIONS Ic = 10 pA, IE = 0 IE=10]LA,lc=0 Ic = 10 pA, IB = 0 VCE = 10 V, IE = 0 VCE=10V, IE=O, TA=65C VEB = 3.0 V, Ic = 0 Ic = 10 mA, VCE = 10 V Ic = 50 mA, VCE = 10 V
BVEBo
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150'C and (TO-92) junction-to-case thermal resistance of 125' ClW (derating factor of 8.0 mW/' C); junction-to-ambient thermal resistance of 200' C/W (derating factor of 5.0 mW/'C); (TO-236) junction-to-ambient thermal resistance of 357" C/W (derating factor of 2.8 mWI' C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 /,s; duty cycle = 1%. 6. For product family characteristic curves. refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-172
PN5128/FTS05128

SYMBOL VCElsall VCEOISUS) VSElsall VSE1ON ) CCb hie CHARACTERISTIC Collector to Emitter Saturation Voltage (Note 5) Collector to Emitter Sustaining Voltage (Notes 4 & 5) Base to Emitter Saturation Voltage (Pulsed) (Note 5) Base to Emitter "On" Voltage (Note 5) Collector to Base Capacitance High Frequency Current Gain 1.5 12 1.10 1.1 10 8.0 MIN MAX 0.25 UNITS V V V V pF Ic Ic Ic Ic TEST CONDITIONS
= 150 mA, = 10 mA,
Is
= 15 mA
Is
=0 = 15 mA = 5.0 V
= 150 mA, = 150 mA, = 10 V,
Is
VCE
Vcs
IE
Ic = 50 mA, VCE
= 0, f = 1.0 MHz = 5.0 V, f = 100 MHz
3-173
FAIRCHILO
PN5130/FTS05130
NPN Small Signal RF Amplifier & Oscillator
G pe 15 dB (Typ) @ 200 MHz Po ... 7.0 mW (Typ) @ 930 MHz NF ... 4.0 dB (Typ) @ 60 MHz
TO-92
TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
-55 C to 1500 C 150 C
PN 0.625 W 1.0 W
FTSO 0.350 W*
12 V 30V 1.0 V 50 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVcEo BVcBo BVEBo leBo hFE Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current DC Pulse Current Gain (Note 5) 15 MIN 12 30 1.0 50 5.0 250 MAX UNITS V V V nA JJ.A TEST CONDITIONS Ie = 3.0 mA, IB = 0 Ie = 100 JJ.A, IE = 0 IE =10JJ.A,le =0 VCB = 10 V, Ie = 0 VeB = 10 V, IE = 0, TA = 65C
Ie = 8.0 mA, VeE = 10 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-to-case thermal resistance of 1250 (derating factor of 8.0 mW/o C); junction-to-ambient thermal resistance of 200' C/W (derating factor of 5.0 mW/ o C); (TO-236) junction-to-ambient thermal resistance of 357' C/W (derating factor of 2.8 mW;o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T121. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-174
PN5130/FTS05130
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC MIN Collector to Emitter Saturation Voltage VCElsatl (Note 5) VeElsatl VeEloNI CCb hIe Base to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 5) Collector to Base Capacitance Forward Current Transfer Ratio Magnitude of Small Signal Current Gain 12 4.5 MAX 0.6 1.0 1.0 1.7 300 UNITS V V V pF TEST CONDITIONS Ic = 10 rnA, Ie = 1.0 rnA Ic = 10 rnA, Ie = 1.0 rnA Ic = 10 rnA, VCE = 10 V VEe = 10 V, IE = 0, f = 1.0 MHz Ic = 8.0 rnA, VCE = 10 V, f = 1.0 kHz Ic =8.0 rnA, VCE= 10V, f=100MHz
I hlel
3-175
FAIRCHILD
PN5133/FTS05133
NPN Low Level Amplifiers
hFE ... 60 (Min), 220 (Typ) @ 1.0 mA BVCEO ... 18 V (Min) @ 3.0 mA
TO-92 TO-236AAI AB
ABSOLUT.E MAXIMUM RATINGS (Note 1)

Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents (Notes 4 & 5) VCEO Collector to Emitter Voltage Vceo Collector to Base Voltage VEeo Emitter to Base Voltage
-55 C to 150 C 150C
PN 0.625 W 1.0 W
FTSO 0.350 W'
18 V 20 V 3.0V
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVceo . BVEBO IEeo Iceo hFE VCEOlsuSI VCElsatl VeEloNI CCb hie hie Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain Collector to Emitter Sustaining Voltage (Notes 3 & 4) Collector to Emitter Saturation Voltage Base to Emitter "On" Voltage Collector to Base Capacitance High Frequency Current Gain Small Signal Current Gain 2.0 50 60 MIN 20 3.0 50 50 5.0 1000 18 0.4 0.75 5.0 20 1100 V V V pF MAX UNITS V V nA nA pA Ic TEST CONDITIONS
= 100 pA, IE = 0 IE = 10 pA, Ic = 0 VEe = 2.0 V, Ic = 0 Vce = 15 V, IE = 0 Vce = 15 V, IE = 0, TA = 65C Ic = 1.0 mA, VCE = 5.0 V Ic = 3.0 mA, Ie = 0 = 1.0 mA, Ie = 0.1 mA = 100 pA, VCE = 5.0 V Vce = 5.0 V, IE = 0 Ic = 1.0 mA, VCE = 5.0 V, f = 20 MHz Ic = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz
Ic Ic
NOTES: 1. These ralings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 C and (TO-92) junction-to-case thermal resistance of 125C/W (derating factor of 8.0 mW/o C); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/o C); (TO-236) j unction-to-ambient thermal resistance of 357 CIW (derating factor of 2.8 mW/O C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 1'5; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set Tl07. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-176
FAIRCHIL.D
PN5134/FTS05134
NPN Small Signal High Speed Saturated Switch
IT ... 250 MHz (Min) CCb ... 4.0 pF (Max) @ 5.0 V r ... 18 ns (Max) @ 10 mA Ion .. 18 ns (Max) @ 10 mA, toff .,. 18 ns (Max) @ 10 mA Complement ... MPS3639
TO-92 TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power DIssipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCES Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current Pulse = 10 J.l.s
-55 C to 150 C 150C
PN 0.625 W 1.0W
FTSO 0.350 W'
UNITS V V V Ic Ic IE TEST CONDITIONS
10 V
20V 20 V 3.5 V 100 mA 500 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVcBo BVCES BVEBO ICBO ICES hFE CHARACTERISTIC Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Collector Reverse Current DC Current Gain (Note 5) 20 15 MIN 20 20 3.5 10 0.40 150 MAX
= 10 J.LA, = 10 J.LA, = 10 J.LA,
IE
=0 =0
VEB Ic
=0
J.l.A
VCB VCE
J.LA
= 15 V, IE = 0, TA = 65C = 15 V, VEB = 0 Ic = 10 mA, VCE = 1.0 V Ic = 30 mA, VCE = 0.4 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 C and (TO-92) junction-to-case thermal resistance of 125C/W (derating factor of 8.0 mW/oC); junction-to-ambient thermal resistance of 200CIW (derating factor of 5.0 mW/C); (TO-236) iunction-to-ambient thermal resistance of 357 CIW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length; 3001"'; duty cycle; 1%. 6. For product family characteristic curves, refer to Curve Set T132. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-177
PN5134/FTS05134

SYMBOL CHARACTERISTIC VeE(satl V8E(Satl Ccb h'e Ts ton tOff Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance High Frequency Current Gain Charge Storage Time Constant (test circuit no. 3111) Turn On Time (test circuit no. 381) Turn Off Time (test circuit no. 381) 2.5 18 18 7.0 ns ns 18 0.70 0.72 MIN MAX 0.25 0.20 0.90 1.10 4.0 UNITS V V V V pF TEST CONDITIONS Ie = 10 mA, 18 = 1.0 mA Ie = 10 mA, 18 = 3.3 mA Ie = 10 mA, 18 = 1.0 mA Ie = 10 mA, 18 = 3.3 mA Ve8 = 5.0 V, IE = 0 Ie = 10 mA, VeE f = 100 MHz Ie = 10 mA, 181 Vee=10V Ie = 10 mA, 181 Vee = 3.0 V
= 10 V,
= -1 82 = 10 mA, = 3.3
mA,
ns Ie = 10 mA, 181 = 3.3 mA, 182 = -3.3 mA, Vee = 2.0 V
3-178
FAIRCHILD
PN5135/FTS05135 PN5136/FTS05136 PN5137/FTS05137

PACKAGE PN5135 PN5136 PN5137 FTS05135 FTS05136 FTS05137 TO-92 TO-92 TO-92 TO-236AAI AB TO-236AAI AB TO-236AAI AB
PD ... 625 mW @ TA = 25C VCEO ... 25 V (Min) (PN/FTS05135) hFE ... 50-600 @ 10 mA (PN/FTS05135), 20-400 @ 150 mA (PN/FTS05136/7) IT ... 40 MHz (Min) Complements ... PN5142, PN5143
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VeEs Collector to Emitter Voltage VEBO Emitter to Base Voltage Collector Current Ie
-55 C to 150" C 150C
PN 0.625 W 1.0 W
5135 25 V 30 V 30 V 4.0 V 200 mA
FTSO 0.350 W*
UNITS V V V 100 nA J1-A TEST CONDITIONS le=100J1-A,VBE =0 le=100J1-A,IE=0 'E = 10 J1-A, Ie = 0 VEB = 2.0 V, Ie = 0 VEB = 4.0 V, Ie = 0
513617 20 V
30 V 30 V 3.0 V 200 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 5135 SYMBOL CHARACTERISTIC MIN MAX Collector to Emitter Breakdown 30 BVeEs Voltage BVeBo BVEBo lEBO Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current 10 30 4.0 5136 MIN MAX 30 30 3.0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-to-case thermal resistance of 1250 C/W (derating factor of 8.0 mWrC); junction-to-ambient thermal resistance of 2000C/W (derating factor of 5.0 mW/ o C); (TO-236) junction-to-ambient thermal resistance of 35r C/W (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length 0 300 I's; duty cycle 0 1%. 6. For product family characteristic curves, refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-179

SYMBOL CHARACTERISTIC ICBo Collector Cutoff Current 5135 MIN MAX 300 100 10 10 hFE DC Pulse Current Gain (Note 5) 50 15 600 20 20 VCEO(suS) VCE(satl VBE(ON) VBE(satl CCb Ceb Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Emitter to Base Capacitance Magnitude of Common Emitter Small Signal Current Gain 2.0 15 2.0 20 25 1.0 0.25 1.0 1.1 1.0 1.1 25 35 20 400 V V V V V V V pF pF 5136 MIN MAX UNITS nA nA !J.A !J.A TEST CONDITIONS VCB = 15 V, VCB = 20 V, VCB = 15 V, TA = 65C VCB = 20 V, TA = 65C Ic Ic Ic Ic IE = 0 IE = 0 IE = 0 IE = 0,
=10mA,VCE =10V = 2.0 mA, VCE = 1.0 V = 150 mA, VCE = 1.0 V = 30 mA, VCE = 1.0 V
Ic = 1.0 mA (pulsed), IB = 0 Ic = 100 mA, IB = 10 mA Ic = 150 mA, IB = 15 mA Ic =100mA,VcE =10V Ic = 150 mA, VCE = 1.0 V Ie = 100 mA, IB = 10 V Ic = 150 mA, IB = 15 V VCB = 10V, IE =0, f=1.0MHz VEB =0.5 V, Ic =0, f = 1.0MHz Ic = 30 mA, VCE = 10 V, f = 20 MHz Ic = 50 mA, VCE = 5.0 V, f = 20 MHz
85
I hfel
SYMBOL CHARACTERISTIC BVcEs BVcBo BVEBO lEBO ICBO Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current
5137 MIN MAX 30 30 3.0 100 100 10 20 20 400
UNITS V V V nA nA !J.A
TEST CONDITIONS Ie = 100 !J.A, VBE = 0 Ic = 100 !J.A, IE = 0 IE = 10!J.A, le=O VEB = 2.0 V, Ic = 0 VCB = 20 V, IE = 0 VCB = 20 V, IE = 0, TA=65C Ic = 150 mA, VCE = 1.0 V Ic = 30 mA, VeE = 1.0 V
hFE
3-180

SYMBOL CHARACTERISTIC VCEO(sus) VCE(sa!) VeE(ON)
VSEfsatl
5137 MIN MAX 20 0.25 1.1 1.1 35 85 2.0 20
UNITS V V V V pF pF
TEST CONDITIONS Ic = 1.0 mA (pulsed), Ie = 0 Ic = 150 mA, Ie = 15 mA Ic = 150 mA, VCE = 1.0 V Ic = 150 mA, Ie = 15 V Vce = 10 V, IE = 0, f = 1.0 MHz VeE = 0.5 V, Ic = 0, f = 1.0 MHz Ic = 50 mA, VCE = 5.0 V, f = 20 MHz
Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Emitter to Base Capacitance Magnitude of Common Emitter Small Signal Current Gain
CCb Cab
I hlel
3-181
FAIRCHILD
PN5138/FTS05138
PNP Low Level Amplifier
hFE ... 50 (Min) @ 100 /lA & 10 mA VeEo ... -30 V (Min)
PACKAGE PNS138 FTSOS138
TO-92 TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 2SoC Ambient Temperature 2So C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage VeBo Collector to Base Voltage VEBO Emitter to Base Voltage
-SSOC to 1S0C 1S0C
PN 0.62S W 1.0W
FTSO 0.3S0 W'
-30 V -30 V -S.OV
ELECTRICAL CHARACTERISTICS (2S0 C Ambient Temperature unless otherwise noted) (Note 6) BVcBo BVEBO leBO hFE hFE VeEO(SuB) SYMBOL CHARACTERISTIC Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current DC Current Gain DC Pulse Current Gain (Note S) Collector to Emitter Sustaining Voltage (Notes 4 & S) SO SO SO -30 V MIN -30 --5.0 SO 3.0 800 MAX UNITS V V nA TEST CONDITIONS
JJ.A
= 100 /lA, IE = 0 IE = 100 /lA, Ie = 0 VCB = -20 V, IE = 0 VeB = -20 V, IE = 0, T A = 6S0 C Ie = 100 /lA, VCE = -10 V Ie = 1.0 mA, VeE = -10 V Ie = 10 mA, VeE = -10 V Ie = 10 mA (pulsed), IB = 0
Ie
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of ISO' C and (TO-92) junction-to-case thermal resistance of 125' ClW (derating factor of 8.0 mW/'C); junction-to-ambient thermal resistance of 200' ClW (derating factor of S.O mW/'C); (TO-236) junction-la-ambient thermal resistance of 357' CIW (derating factor of 2.8 mW/' C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. S. Pulse conditions: length = 300 I'S; duty cycle = 1%. 6. For product family characteristic curves. refer to Curve Set T219. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-182
PN5138/FTS05138

SYMBOL CHARACTERISTIC VCE(sat) VBE(ONI VBE(Sat) Ccb Ceb hie hie Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Emitter to Base Capacitance High Frequency Current Gain Small Signal Current Gain 1.5 40 1000 MIN MAX -0.3 -1.0 -1.0 7.0 30 UNITS V V V pF pF Ic Ic Ic TEST CONDITIONS
= 10 mA, = 10 mA, = 10 mA,
IB
= 0.5
mA
VCE IB
= -10 V
mA
= 0.5
IE
VCB
VEB
= 0, f = 1.0 MHz = 0, f = 1.0 MHz Ic = 0.5 mA, VCE = -5.0 V, f = 20 MHz Ic = 1.0 mA, VCE = -1 0 V, f = 1.0 kHz
Ic
= -5.0 V, = -5.0 V,
3-183
FAIRCHILD
PN5139/FTS05139
PNP Small Signal General Purpose Amplifier & Switch
VCEO ... -20 V (Min) hFE ... 40 (Min) @ 10 mA IT ... 300 MHz (Min) CCb 5.0 pF (Max) @ -10 V
TO-92 TO-236AAI AB
-55C to 150C 150C
PN 0.625 W 1.0W
FTSO 0.350 W'
-20 V -20 V -5.0 V 100 mA

SYMBOL BVcBo BVCES BVEBo ICES hFE hFE CHARACTERISTIC Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Reverse Current DC Current Gain DC Pulse Current Gain (Note 5) 30 40 40 15 MIN -20 -20 -5.0 50 25 MAX UNITS V V V nA TEST CONDITIONS Ic = 100 MA, IE = 0 Ic =100MA,VEB=0 IE = 100 MA, Ic = 0 VCE = -15 V, VEB = 0 VCE = -15 V, VEB = 0, TA = 65C Ic = 100 MA, VCE = -10 V Ie = 1.0 mA, VCE = -10 V Ic = 10 mA, VCE = -1.0 V Ic = 50 mA, VCE = -10 V
p,A
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 C and (TO-92) junction-to-case thermal resistance of 125 ClW (derating factor of 8.0 mW;o C); junction-to-ambient thermal resistance of 200 ClW (derating factor of 5.0 mWfO C); (TO-236) junction-to-ambient thermal resistance of 357C/W (derating factor of 2.8 mWfOC). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T215. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm .
3-184
PN5139/FTS05139

SYMBOL CHARACTERISTIC Collector to Emitter Saturation VCE(sati Voltage VCE(Satl VBE(Satl VCEO(sus) CCb Cab Pulsed Collector to Emitter Saturation Voltage (Note 5) Pulsed Base to Emitter Saturation Voltage (Note 5) Collector to Emitter Sustaining Voltage (Note 5) Collector to Base Capacitance Emitter to Base Capacitance Magnitude 01 Small Signal Current Gain Turn On Time (test circuit no. 407) Turn Off Time (test circuit no. 407) 3.0 50 200 ns ns MIN MAX -{).15 -0.20 -0.5 -0.7 -1.0 -{).75 -1.25 -20 5.0 8.0 UNITS V V V V V V pF pF Ic Ic Ic
= 1.0 rnA,
TEST CONDITIONS 18 = 0.1 rnA
= 10 rnA, 18 = 1.0 rnA = 50 rnA, IB = 5.0 rnA Ic = 10 rnA, IB = 1.0 rnA Ic = 50 rnA, IB = 5.0 rnA Ic = 10 rnA (pulsed), IB = 0 = -10 V, IE = 0, 1 = 1.0 MHz = -{).5 V, Ic = 0, 1 = 1.0 MHz Ic = 10 rnA, VCE = -20 V, 1 = 100 MHz
VCB VEB Ic "" 50 rnA, IB1 "" 5.0 rnA Ic "" 50 rnA, IB1 "" 5.0 rnA, IB2 "" -5.0 rnA
Ihlel
ton tOil
3-185
FAIRCHILD
PN5142/FTS05142 PN5143/FTS05143
VCEO ... 20 V @ 10 mA hFE ... 30 (Min) @ 50 mA, 15 (Min) @ 300 mA ton ... 100 ns (Max) @ 300 mA, toll ... 200 ns (Max) @ 300 mA
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 250 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current
TO-92 TO-92
-55 C to 150 C 150C
PN 0.625 W 1.0 W
FTSO 0.350 W*
-20 V -20 V -4.0 V 500 mA
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVcBo BVEBo ICES hFE
VCEO(sus)
CHARACTERISTIC Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Reverse Current DC Pulse Current Gain (Note 5) Collector to Emitter Sustaining Voltage (Notes 4 & 5)
MIN -20 --4.0
MAX
UNITS V V nA }lA
TEST CONDITIONS Ic = 100 }lA, IE = 0 IE = 100 }lA, IE = 0 VCE=-12V, VBE=O VCE = -12 V, VBE = 0, TA = 65C Ic = 50 mA, VCE = 1.0 V Ie = 300 mA, VCE = -10 V
50 2.0 30 15 -20
Ic = 10 mA (pulsed), IB = 0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mWr C); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mWr C); (TO-236) junction-to-ambient thermal resistance of 357CIW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 J'S; duty cycle = 1%. 6. For product family characteristic curves. refer to Curve Set T212. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-186
PN5142/FTS05142 PN5143/FTS05143
SYMBOL CHARACTERISTIC MIN Collector to Emitter Saturation Voltage VCEIsatl (pulsed) (Note 5) VBEIsatl Ccb Ceb hie ton toll Base to Emitter Saturation Voltage (pulsed) (Note 5) Collector to Base Capacitance Emitter to Base Capacitance High Frequency Current Gain Turn On Time (test circuit no. 245) Turn Off Time (test circuit no. 245) 1.0 -0.8
MAX -0.5 -2.0 -1.5 -2.5 10 30 100 200
UNITS V V V V pF pF ns ns
TEST CONDITIONS Ic = 50 mA, IB = 2.5 mA Ic = 300 rnA, IB = 30 mA Ic = 50 mA, IB = 2.5 mA Ic = 300 mA, IB = 30 mA VCB = -10 V, IE = 0, f = 1.0 MHz VEB = -D.5 V, Ic = 0, f = 1.0 MHz Ic=50mA, VCE=-3.0V, f=100MHz Ic ,.. 300 mA, IB1 ,.. 30 mA Ic ,.. 300 mA, IB1 ,.. 30 mA, IB2'" -30 mA
3-187
FAIRCHILD
PN5770/FTS05770
NPN Small Signal High Frequency Amplifier & Oscillator
Po ... 30 mW @ 500 MHz

fe
800 (Min)
TO-92 TO-236AAIAB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector-to-Emitter Voltage (Note 4) VCBO Collector-to-Base Voltage "VEBO Emitter-to-Base Voltage Collector Current Ic
-55 C to 150 C 150C
PN 0.625 W 1.0 W
FTSO 0.350 W'
15 V 30 V 4.5V 50 mA

SYMBOL CHARACTERISTIC ICBo Collector Cutoff Current MIN MAX 10 1.0 20 50 UNITS nA pA TEST CONDITIONS VCB = 15 V, IE VCB = 15 V, IE TA = 125C Ic Ic V V
=0 = 0,
hFE VCElsa11 VBElsatl
DC Current Gain (Note 5) Collector-to-Emitter Saturation Voltage Collector to Base Saturation Voltage
200 0.4 1.0
= 3.0 mA, VCE = 1.0 V = 8.0 mA, VCE = 1.0 V Ic = 10 mA, IB = 1.0 mA
Ic
= 10 mA,
IB
= 1.0 mA
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150'C and (TO-92) junction-to-case thermal resistance of 125'CIW (derating factor of 8.0 mW/'C); junction-to-ambient thermal resistance of 200'C/W (derating factor of 5.0 mW/'C); (TO-238) junction-to-ambient thermal resistance of 357' C/W (derating factor of 2.8 mW/' C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 /ls; duty cycle =1%. 6. For product family characteristic curves, refer to Curve Set T121. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-188
PN5770/FTS05770
SYMBOL CHARACTERISTIC Collector-to-Base Capacitance CCb hie hie rb'Cc n Po Low Frequency Current Gain High Frequency Current Gain Collector Base Time Constant Collector Efficiency Power Output
MIN 0.7 40 8.0 3.0 25 30
MAX 1.1 240 18 20
UNITS pF
TEST CONDITIONS VeB
= 10 V, f = 1.0 MHz Ie = 8.0 rnA, VeE = 20 V, f = 1.0 kHz Ie = 8.0 rnA, VeE = 10 V,
f=100MHz IE = 8.0 rnA, VeB f = 79.8 MHz Ie = 8.0 rnA, VeB f = 500 MHz Ie = 8.0 rnA, VeB f = 500 MHz
ps
%
= 10 V, = 15 V, = 15 V,
mW
3-189
PN5855/FTS05855 PN5857/FTS05857
PNP Small Signal General Purpose Transistor
VCEO ... -60 V and -80 V (Min) h FE ... 50 (Min) from 10 mA to 500 mA PACKAGE PN5855 PN5857 FTS05855 FTS05857
TO-92 TO-92
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature Voltages & Currents (Reverse Voltage Polarity for PNP) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
-55 C to 150" C 150C
PN 0.625 W
FTSO 0.350 W*
5855
-60 -60 -5.0 1.0 V V V A
5851
-80 V -80 V -5.0 V 1.0 A
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 5) SYMBOL CHARACTERISTIC BVcBo BVEBo lEBo ICBO hFE Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain (Note 4) 50 50 50 15 5855 MIN MAX -60 -5.0 100 100 100 300 50 50 50 15 300 5857 MIN MAX -80 -5.0 100 UNITS V V nA nA nA TEST CONDITIONS Ic = 100 p.A, IE = 0 IE = 10 p.A, Ic = 0 VEB = -4.0 V, Ie = 0 VCB = -40 V, IE = 0 VCB = -60 V, IE = 0 Ic Ic Ic Ic = 10 mA, VCE = -10 V = 150 mA, VCE = -10 V = 500 mA, VCE = -10 V =1.0A,VcE =-10V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and junction-ta-case thermal resistance of 1250 C/W (derating factor of 8.0 mW/oC); junction-to-ambient thermal resistance of 200' C/W (derating factor of 5.0 mWI' C) for PN5855 and PN5857. These ratings give a maximum junction temperature of 135' C and junction-to-ambient thermal resistance of 150' CIW (derating factor of 6.8 mWI' C) for 2N5855 and 2N5857. 4. Pulse conditions: length = 300 ~s: duty cycle = 1%. 5. For product family characteristic curves, refer to Curve Set T224. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-190
PN5855/FTS05855 PN5857/FTS05857

SYMBOL CHARACTERISTIC Collector to Emitter Sustaining VCEOISUS) Voltage (Note 4) VCEISa!) V8EISa!) Collector to Emitter Saturation Voltage (Note 4) Base to Emitter Saturation Voltage (Note 4) Output Capacitance High Frequency Current Gain 1.0 5855 MIN MAX --150
~.4
5857 MIN MAX -80

~.4
UNITS V V V pF
TEST CONDITIONS Ic = 10 mA, 18 = 0 Ic = 150 mA, 18 = 15 mA Ic = 150 mA, IB = 15 mA VCB =-10V, IE=O, f=100kHz Ic = 50 mA, VCE = -10 V, f = 100 MHz
-1.3 15 1.0
-1.3 15
Cob
hIe
3-191
FAIRCHILD
PN5965/FTS05965
Low Power Audio Frequency
VCEO ... 180 V (Min) hFE ... 50-250 @ 10 mA, 50 (Min) @ 1.0 mA and 50 mA CCb ... 4.0 pF (Max) @ 10 V Complements ... PN4888
TO-92 TO-236AAIAB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures -55 C to 150C Storage Temperature 150C Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature 25 C case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Notes 4 & 5) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic DC Collector Current
PN 0.625 W 1.0W
FTSO 0.350 W'
180 V 200 V 5.0 V 600 mA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 7) SYMBOL CHARACTERISTIC MIN BVcEo Collector to Emitter Breakdown Voltage 180 BVEBo BVcBo ICBO lEBo hFE Emitter to Base Breakdown Voltage Collector to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 5) 50 50 50 5.0 200 50 25 50 250 MAX UNITS V V V nA Jl.A nA TEST CONDITIONS Ic = 1.0 mA, IB = 0 Ic = 0, IE = 10 Ic = 100
iJA
iJA,
IE = 0
VCB=160V,IE =0 VCB = 160V,IE=O, TA=100 C VEB = 4.0 V, Ic = 0 Ic = 1.0 mA, VCE = 5.0 V Ic = 10 mA, VCE = 5.0 V Ic = 50 mA, VCE = 5.0 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125CIW (derating factor of 8.0 mW/oC); junction-to-ambient thermal resistance of 200CIW (derating factor of 5.0 mW/oC); (TO-236) junction-to-ambient thermal resistance of 357CIW (derating factor of 2.8 mW/oC). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 3001'8; duty cycle = 1%. 6. CeB measurement employs a three terminal capacitance bridge incorporating a guard circuit. The emitter terminal shall be connected to the guard terminal of the bridge. 7. For product family characteristic curves. refer to Curve Set T147. Package mounted on 99.5% alumina 8mm x Smm x O.6mm.
3-192
PN5965/FTS05965
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 7) SYMBOL CHARACTERISTIC VCElsatl Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance (Note 6) Magnitude of Common Emitter Small Signal Current Gain Small Signal Current Gain Small Signal Short Circuit Input Impedance Small Signal Open Circuit Open Conductance 1.0 50 6.0 40 k!l
/Lmho
MIN
MAX 0.15 0.20 0.25 0.8 0.8 1.0 1.0 4.0 5.0
UNITS V V V V V V V pF
TEST CONDITIONS Ic = 1.0 rnA, IB = 0.1 rnA Ic = 10 rnA, IB = 1.0 rnA Ic = 50 rnA, IB = 5.0 rnA Ic = 1.0 rnA, VCE = 5.0 V Ic=1.0mA, IB=0.1 V Ic = 10 rnA, IB = 1.0 V Ic = 50 rnA, IB = 5.0 V VCB = 10 V, IE = 0, f = 1.0 MHz Ic = 10 rnA, VCE = 10 V, f = 100 MHz Ic = 1.0 rnA, VCE = 10 V, f = 1.0 kHz Ic = 1.0 rnA, VCE = 10 V, f = 1.0 kHz Ic = 1.0 rnA, VCE = 10 V, f = 1.0 kHz
VBEIONI VBElsatl
Ccb [hle[ hie hie hoe
3-193
FAIRCHILD
1 N4561 45714581 459 FD LL4561457/458/459

1 N456A/457A/458A/459A FD LL456AI 457 AI 458AI459A
Low Leakage Diodes
PACKAGES
IR ... 25 nA (MAX) @ WIV C ... 6.0 pf (MAX) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor (From 25C) -65C to +200C +175C +260C
500 mW 3.33 mW/oC
1N4S6/A 1N4S7/A 1N4S8/A 1N4S9/A Maximum Voltage and Currents 25 V WIV Working Inverse Voltage 60 V 125 V 175 V 200mA 10 Average Rectified Current IF Continuous Forward Current 500mA 600mA if Peak Repetitive Forward Current if(surge) Peak Forward Surge Current 4.0A Pulse Width 1 !LS 1.0 A Pulse Width = 1 s
1N456 1N457 1N458 1N459 1N456A 1N457A 1N458A 1N459A FDLL456 FOLL457 FOLL458 FDLL459 FOLL456A FOLL457A FOLL458A FOLL459A
00-35 00-35 00-35 00-35 00-35 00-35 00-35 00-35 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF CHARACTERISTIC Forward Voltage lN456A/7A/8A/9A lN456 lN457 lN458 lN459 IR BV Reverse Current Breakdown Voltage
lN456/A lN457/A lN458/A lN459/A
MIN
MAX 1.0 1.0 1.0 1.0 1.0 25 5.0
UNITS V V V V V nA !LA V V V V
TEST CONDITIONS IF = 100mA IF=40mA IF=20mA IF=7mA IF = 3 mA VR = Rated WIV VR = Rated WIV, TA = 150C IR=100 !LA IR = l00/loA IR = 100/loA IR = 100/loA VR = 0, f = 1 MHz
30 70 150 200 6.0
Capacitance
pF
NOTES: 1. Thea. fatings are limiting value. above which the aerviceability of the diode may be impaired. 2. The.e are ateady Itate limite. The factory ahould be consulted on applications Involving pulsed or low dutycycle operation. 3. For product family characteriltic curvea, ref.r to Chapter 4. 02>;.
3-194
FAIRCHILO
1 N461A/462A/463A FD LL461 AI 462AI 463A

General Purpose High Conductance Diodes
VF ... 1.0 V (MAX) @ 100 mA IR ... 500 nA (MAX) @ WIV ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient linear Power Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage Average Rectified Current 10 Continuous Forward Current IF Peak Repetitive Forward Current if if(surge) Peak Forward Surge Current Pulse Width = 1 s Pulse Width = 1 /1S IN461A 25 V 200 mA 500 mA 600 mA 1.0 A 4.0 A -65C to +200C +175C +260C
PACKAGES
1N461A 1N462A 1N463A FDll461A FDLl462A FDLL463A
00-35 00-35 00-35 LL-34 LL-34 LL-34
500 mW 3.33 mW/ C
.IN462A IN463A IN464A 175 V 60 V 125 V 200 mA 200 mA 200 mA 500 mA 500 mA 500 mA 600 mA 600 mA 600 mA 1.0 A 4.0 A 1.0 A 4.0 A 1.0 A
4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF IR BV CHARACTERISTIC Forward Voltage Reverse Current Breakdown Voltage IN461A IN462A IN463A IN464A 30 70 200 150 MIN MAX 1.0 500 30 UNITS V nA /1A V V V V If TEST CONDITIONS
100 mA
VR VR
= Rated WIV = Rated WIV, TA = 150C IR = 100/1A IR = 100 /1A IR = 100 p.A IR = 100 p.A
NOTES:
1. These ratings are limiting values above which the serviceability of the diode may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. For product family characteristic curves, refer to Chapter 4, 02.
3-195
FAIRCHILD
1 N482B/483B/484B/485B FDLL482B/483B/484B/485B
General Purpose Low Leakage Diodes
VF ... 1.0 V (MAX) @ 100 mA IR ... 25 nA (MAX) @ WIV ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature (from 25C) Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor (from 25C)
PACKAGES
-65C to +200C +175C +260C
1N482B 1N483B 1N484B 1N485B FDLL482B FDLL483B FDLL484B FDLL485B
DO-35 DO-35 DO-35 DO-35 LL-34 LL-34 LL-34 LL-34
500 mW 3.33 mW/oC
Maximum Voltage and Currents IN482B IN483B IN484B IN485B IN486B WIV Working Inverse Voltage 36V 70V 130V 180V 225V 10 Average Rectified Current 200 mA IF Continuous Forward Current 500 mA if Peak Repetitive Forward Current 600 mA if(surge) Peak Forward Surge Current Pulse Width = 1 s 1.0 Pulse Width = 1 !LS 4.0
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF IR CHARACTERISTIC Forward Voltage Reverse Current 1N482B - 1N485B lN486B BV Breakdown Voltage lN482B lN483B lN484B lN485B lN486B 40 80 150 200 250 MIN MAX 1.0 25 5.0 50 10 UNITS V nA !LA nA !LA V V V V V TEST CONDITIONS IF
= 100 mA VR = Rated WIV VR = Rated WIV, TA = 150C VR = 225 V VR = 225 V, TA = 150C IR = 100 !LA IR = 100ILA IR = 100 ILA IR = 100ILA IR = 100ILA
NOTES. 1. These ratings are limiting values above which the serviceability of the diode may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty"cycle operation. 3. For product family characteristic curves, refer to Chapter 4, 02.
3-196
FAIRCHIL.D
1 N62S/626/627/628/629 FDLL62S/626/627/628/629
VF ... 1.5 V (MAX) -@ 4.0 mA IR ... 1.0 IlA (MAX) @ WIV ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Operating Junction Temperature Lead Temperatures Power Dissipation (Notes 2) Maximum Total Dissipation at 25C Ambient Linear Derating Factor (from 25C) -65C to +200C 175C 260C
PACKAGES
500 mW 3.33 mW/oC
1N625 1N626 1N627 1N628 1N629 FDLL625 FOLL626 FDLL627 FDLL628 FDLL629
00-35 00-35 00-35 00-35 00-35 LL-34 LL-34 LL-34 LL-34 LL-34
Maximum Voltage and Currents 1N625 1N626 1N627 1N628 1N629 WIV Working Inverse Voltage 20 V 35 V 75 V 125 V 175 V Average Rectified Current 10 175 rnA 175 rnA 175 mA 175 rnA 175 rnA IF Forward Current Steady State 400 rnA 400 rnA 400 rnA 400 rnA 400 rnA if(surge) Peak Forward Surge Current Pulse Width = 1.0 5 1.0 A 1.0 A 1.0 A 1.0 A 1.0 A Pulse Width = 1.0 IlS 4.0 A 4.0 A 4.0 A 4.0.A 4.0 A
ELECTRICAL~HARACTERISTICS
(25C Ambient Temperature unless otherwise noted) MIN MAX 1.5 1.0 30 lN625 lN626 lN627 lN628 lN629 30 50 100 150 200 1.0 UNITS V IlA Il A V V V V V
IlS
SYMBOL VF IR BV
CHARACTERISTIC Forward Voltage Reverse Current Breakdown Voltage
TEST CONDITIONS IF = 4.0 rnA VR = rated WIV VR = rated WIV, TA IR = 100llA IR = 100 IlA IR = 100llA IR = 100llA IR = 100llA If = 30 rnA, Vr = 35 V, Recovery to 400 kr!
= 100C
trr
Reverse Recovery Time
NOTES: 1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. For product family characteristic curves, refer to Chapter 4, 01.
3-197
FAIRCHILO
1 N658/FDLL658
BV ... 120 V (MIN) @ 100 /LA VF ... 1.0 V (MAX) @ 100 mA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Operating Junction Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25C Ambient Linear Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage 10 Average Rectified Current IF Forward Current Steady State if(surge) Peak Forward Surge Current Pulse Width = 1.0s Pulse Width = 1.0/-ls -65C to +200C +175C +200C
PACKAGES
1N658 FOLL658
00-35
LL-34
500 mW
3.33 mW/oC
100 V 200 mA 500 mA 1.0 A 4.0A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF IR BV trr CHARACTERISTIC Forward Voltage Reverse Current Breakdown Voltage Reverse Recovery Time 120 300 MIN MAX 1.0 50 25 UNITS V nA /LA V ns TEST CONDITIONS IF
= 100 rnA = 150C = 100 /LA
Vr = 50 V VR = 50 V. TA IR
VR = 40 V. If = 5.0 rnA. RL = 2.0 kG. CL = 10 pF. Recovery to 80 kG
NOTES. 1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired. 2. These are steady atate limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. For product family characteristic curves, fefer to Chapter 4, 01.
3-198
FAIRCHILD
1 N659/660/661 FDLL659/660/661
VF ... 1.0 V (MAX) @ 6.0 mA t rr ... 300 nB (MAX) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Operating Junction Temperature Lead Temperature Power Dissipation (Notes 2) Maximum Total Dissipation at 25C Ambient Linear Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage 10 Average Rectified Current IF Forward Current Steady State if(surge) Peak Forward Surge Current Pulse Width = 1.0s Pull?e Width = 1.0 /lS -65C to +200C +175C +260C
PACKAGES
1N659 1N660 1N661 FDLL659 FOLL660 FDLL661
00-35 00-35 00-35 LL-34 LL-34 LL-34
500 mW 3.33 mW/oC
lN659
50 V 200 mA 500 mA 1.0 A 4.0 A
lN660
WOV
200 mA 500 mA 1.0 A 4.0 A
lN661
200 V 200 mA 500 mA 1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) 1N659 SYMBOL VF IR CHARACTERISTIC Forward Voltage Reverse Current MIN MAX 1.0 5.0 5.0 10 25 50 100 BV trr Breakdown Voltage Reverse Recovery Time 60 300 120 300 240 300 1N660 MIN MAX 1.0 1N661 MIN MAX 1.0 UNITS V /LA /LA /LA /LA /LA /LA V ns TEST CONDITIONS IF = 6.0 rnA VR VR VR VR VR VR
= 50 V = 100 V = 200 V = 50 V, TA = 100C = 100 V, TA = 100C = 200 V, TA = 100C IR = 100 /LA Vr = 35 V, If = 30 rnA, RL = 2.0 kf!, CL = 10 pF, Recovery to 400 kf!
NOTES: 1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. For product family characteristic curves, refer to Chapter 4. 04 for lN659, 4. 01 for lN660 and lN661.
3-199
FAIRCHILD
1 N746 through 1 N759

500 mW Silicon Linear Diodes
Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor (from 25C)
I
PACKAGE!? All Devices

-65C to +200C +175C +260C
00-35
500mW
3.33 mW/oC
ELECTRICAL CHARACTERISTICS (25C Ambient unless otherwise noted) SYMBOL Zz Maximum Zener Impedance (Note 4) (I z = 20 rnA) UNIT IN746 IN747 IN748 IN749 IN750 IN751 IN752 IN753 IN754 IN755 IN756 IN757 IN758 IN759
NOTES,
1. These ratings are limiting values above which the serviceability of the diode may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. Type numbers without suffix have 10% tolerance on nominal Vz . Type number. with suffix A have 5% .o~erance on nominal Vz 4. The Zener impedance Zz is derived by superimposing a 60 Hz 2 rnA (AMS) Bignal on the 20 mA IZ test current. 5. For product family characteristic curves, refer to Chapter 4, 013.
Vz Nominal Zener Voltage (Note 3) (IZ = 20 rnA) V 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10.0 12.0
IR Maximum Reverse Current (V R = 1.0V) @25C

/lA
TC Typical Temperature Coefficient of Vz

%/OC
Characteristic
@150C
/lA
!l
28.0 24.0 23.0 22.0 19.0 17.0 11.0 7.0 5.0 6.0 8.0 10.0 17.0 30.0
10.0 10.0 10.0 2.0 2.0 1.0 1.0 0.1 0.1 0.1 0.1 0.1 0.1 0.1
30.0 30.0 30.0 30.0 30.0 20.0 20.0 20.0 20.0 20.0 20.0 20.0 20.0 20.0
-0.070 -0.065 -0.060 -0.055 -0.043 0.030 0.028 +0.045 +0.050 +0.058 +0.062 +0.068 +0.075 '+0.077
3-200
FAIRCHILO
1N/FDLL9141A/8/9161AlB 1 N/FDLL4148/4149/4446 1 N/FDLL4447/4448/4449

High Conductance Ultra Fast Switching Diodes
t rr .. 4.0 n8 (MAX) BV ... 100 V (MIN)
ABSOLUTE MAXIMUM RATINGS (Note 0 Temperatures Storage Temperature Range Max Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25C Linear Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage 10 Average Rectified Current If DC Forward Current if Recurrent Peak Forward Current if(surge) Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 /1S -65 to +200C +175C +260C
500 mW 3.33 mW/oC
75 v 200 mA 300 rnA 400 mA 1.0 A 4.0 A
PACKAGES 1 N914 1N916 1N914A 1N914B 1N916A 1N916B 1 N4148 1 N4149 1N4446 1N4447 1N4448 1N4449 FDLL914 FDLL916 FDLL914A FDLL914B FDLL916A FDLL916B FDLL4148 FDLL4149 FDLL4446 FDLL4447 FDLL4448 FDLL4449
DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 DO-35 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34 LL-34
If you need this device in the SOT package, an electical equivalent is available. See FDS01200 family. ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL BV IR CHARACTERISTIC Breakdown Voltage Reverse Current MIN 100 75 25 50 5.0 lN914B, lN4448 lN916B, lN4449 lN914, lN916 } lN4148,lN4149 lN914A, lN916A} lN4446, lN4447 lN916B, lN4449 lN914B, lN4448 0.62 0.63 0.72 0.73 1.0 1.0 1.0 1.0 4.0 MAX UNITS V V nA p.A /1 A V V V V V V ns TEST CONDITIONS IR = 100 p.A IR = 5.0 /1A VR VR VR
= 20 V = 20 V, TA = 150C = 75 V = 10 rnA
VF
Forward Voltage
IF = 5.0 rnA IF = 5.0 rnA IF IF
= 20 rnA
IF = 30 rnA IF = 100 rnA If = 10 rnA, Vr = 6.0 V, RL = 100 Q Rec. to 1.0 rnA
trr
NOTES:
1. Maximum fatings are limiting values above which life or satisfactory performance may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation.
3. For family characteristic curves, refer to Chapter 4, 04.
3-201
1N/FD LL9141A/B/9161AlB 1N/FDLL4148/4149/4446 1N/FDLL4447/444481 4449
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL C CHARACTERISTIC Capacitance 1N914, 1N914A 1N914B,1N4148 1N4446, 1N4447 1N916, 1N916A } 1N916B, 1N4149 1N4448, 1N4449 1N914, 1N916 1N914B, 1N916B 1N4448, 1N4449 1N914A, 1N914B 1N916A, 1N916B 45 MIN MAX 4.0 UNITS pF TEST CONDITIONS VR
= 0, f = 1 MHz
2.0
pF
VR = 0, f = 1 MHz 50 rnA Peak Square Wave, 0.1 /LS pulse width, 5 kHz - 100 kHz rep. rate 2.0 V rms, I
Vir
Peak Forward Recovery Voltage Rectilication Efficiency
2.5
RE
= 100 MHz
3-202
FAIRCHILD
1 N957 through 1 N973

500 mW Silicon Planar Zener Diodes
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperture Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor (from 25C) -65C to +200C +175C +260C
PACKAGES All Devices
00-35
500 mW 3.33 mW/oC
I
ELECTRICAL CHARACTERISTICS (25C Ambient) SYMBOL Vz Zz IZT ZZK IZK IA VAT Test Voltage TC IZM
Nominal Maximum Zener Zener Characteristics Voltage Impedance (Note 3) (Note 4) @IZT @IZT UNIT IN957 IN958 IN959 IN960 IN961 IN962 IN963 IN964 IN965 IN966 IN967 IN968 IN969 IN970 IN971 IN972 IN973 V 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 15.0 16.0 18.0 20.0 22.0 24.0 27.0 30.0
~3.0
Test Maximum Test Maximum Current Zener Knee Current Reverse Impedance (Note 4) @IZK rnA 18.5 16.5 15.0 14.0 12.5 11.5 10.5 9.5 8.5 7.8 7.0 6.2 5.6 5.2 4.6 4.2 3.8 Current @VAT rnA 1.0 0.5 0.5 0.5 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 !LA 150 75 50 25 10 5.0 5.0 5.0 5.0 5.0 5,0 5.0 5.0 5.0 5.0 0.0 5.0
Typical ~aximum IT emperature Zener
20% 10% 5% Coefficient Current (Note 5) Vz Vz Vz of Vz Tolerance Tolerance Tolerance V 4.4 4.8 5.2 5.8 6.4 7.0 7.6 8.3 9.6 10.2 11.5 12.8 14.0 15.4 17.2 19.2 21.1 V 4.9 5.4 5.9 6.6 7.2 8.0 8.6 9.4 10.8 11.5 13.0 14.4 15.8 17.3 19.4 21.6 23.8 V 5.2 5.7 6.2 6.9 7.6 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1 %/oC +0.050 +0.058 +0.062 +0.068 +0.072 +0.073 +0.076 +0.079 +0.082 +0.083 +0.085 +0.086 +0.087 +0.088 +0.090 +0.091 0.092 rnA 47 42 38 35 32 28 26 24 21 19 17 15 14 13 11 10 9.2
n
4.5 5.5 6.5 7.5 8.5 9.5 11.5 13.0 16.0 17.0 21.0 25.0 29.0 33.0 41.0 49.0 58.0
n
700 700 700 700 700 700 700 700 700 700 750 750 750 750 750 1000 1000
NOTES: 1. These ratings are limiting valu8s above which the serviceability of the diode may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. Type numbers without suffix have 20% tolerance on nominal Vz . Type numbers with suffix A have 10% tolerance on nominal V z . Type numbers with suffix 8 have 5% tolerance on nominal Vz . 4. The Zener impedances Zz and ZZK are derived by superimposing a 60 Hz signal on test currents IZT and IZK-' having an RMS value of 10% of the d.c. value of IZT and IZK respectively. 5. Maximum Zener Curent (I ZM) is based on the maximum Zener Yoltage of a 20% tolerance unit. 6. For product family characteristic curves, refer to Chapter 4. 013.
3-203
FAIRCHILD
1 N30641 430514454 FD LL30641 43051 4454

Ultra Fast Low Capacitance Diodes
PACKAGES
C ... 2.0 pF @ VR = 0, f = 1.0 MHz t rr ... 4.0 ns @ If = 10 rnA, It = 10 rnA, Vr = 1.0 V

BV ... 75 V (MIN) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Max Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25C Linear Derating Factor (from 25C) Maximum Voltages and Currents WIV Working Inverse Voltage Average Rectified Current 10 Forward Current Steady State IF Recurrent Peak Forward Current if if (surge) Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 /-IS -65C to +200C +175C +260C
1N3064 1N4305 1N4454 FDLL3064 FDLL4305 FDLL4454
00-35 00-35 00-35 LL-34 LL-34 LL-34
500mW 3.33 mW/oC
50 V 100 rnA 300 rnA 400 rnA 1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF CHARACTERISTIC Forward Voltage 0.610 0.550 0.505 1N3064 f 1N4454 1N4305 IR BV trr Reverse Current Breakdown Voltage Reverse Recovery Time (Note 3) 1N4305 1N3064 ~ 1N4305 1N4454 C RE t:NF/oC Capacitance Rectification Efficiency (Note 4) Forward Voltage Temperature Coefficient (Note 5) 45 3.0 75 0.710 0.650 0.575 1.0 0.70 0.85 0.1 100 V V V V V /-I A /-IA V 2.0 4.0 2.0 ns ns Vr = 1.0V pF
%
MIN
MAX
UNITS
TEST CONDITIONS IF = 2.0 rnA IF = 1.0 rnA IF = 250 /-IA IF = 10 rnA IF = 10 rnA VR = 5'0 V VR=50V,TA= 150C IR = 5.0 /-IA If If
= 10 rnA, Vr = 6.0 V, RL = = Ir =10 rnA, RL = 100 fI, = 0, f =

1.0 MHz
100 fI
VR
f= 1.0 MHz
mV/oC
NOTES: 1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired. 2. Theae are steady atate limits. The factory should be consulted on applications involving pulsed or low dutycycle operation. 3. Recovery to 1.0 rnA. 4. Rectification efficiency is defined 8S the ratio of de load voltage to peak rf input voltage to the detector circuit. measured with 2.0 V rms input to the circuit. Load resistance S.On.load . capacitance 20 pF 5. Thia value for Il,VF' C ia a typical value not a minimum or maximum. 8. For product family characteriatic curves, refer to Chapter 4. 04.
3-204
F=AIRCHILD
1 N3070/4938 FDLL3070/4938
High Speed High Conductance Diodes
BV ... 200 V (MIN) IR ... 100 nA (MAX) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Max Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25C Ambient Linear Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage 10 Average Rectified Current IF Forward Current Steady State DC if Recurrent Peak Forward Current if (surge) Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 jl.S -65C to +200C +175C +260C
PACKAGES 1N3070 1N4938 FOLL3070 FOLL4938
00-35 00-35
LL-34 LL-34
500 mW
3.33 mW/oC
175 V 200mA 500mA 600mA 1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL IR BV VF C trr RE CHARACTERISTIC Reverse Current Breakdown Voltage Forward Voltage Capacitance Reverse Recovery Time (Note 3) Rectification Efficiency (Note 4) 35 200 1.0 5.0 50 MIN MAX 100 100 UNITS nA /LA V V pF ns
%
TEST CONDITIONS VR VR
= 175 V = 175 V, TA = 150C IR = 100/LA IF = 100 rnA VR = 0, f = 1.0 MHz If = Ir = 30 rnA, RL = 1000 f = 100 MHz
NOTES: 1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired.
2. Thasa are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. Recovery to 1.0 rnA. 4. Rectification efficiency is defined as the ratio of de load Yoltage to peak rf input voltage 10 the detector circuit, measured with 2.0 V rms input to the circuit. Load resistance: 5.0 kO,load capacitance 20 pF. . 5. 1N3070 and IN4938 are electrically and mechanically identical. 6. For product family characteristic curves, refer to Chapter 4, 01.
3-205
FAIRCHILD
A Schlumberger Com pan'
1N3595/6099 FDLL3595/6099
High Conductance Low Leakage Diodes

PACKAGES
BV ... 15o-\( (MlN)@ 100 itA VF1.0V@2oomA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Max Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25C Ambient Linear Derating Factor (From 25C) Maximum Voltage and Currents WIV Working Inverse Voltage Average Rectified Current 10 Forward Current Steady State IF Peak Repetitive Forward Current if if (surge) Peak Forward Surge Current Pulse Width 1.0 s Pulse Width = 1.0 itS -65C to +200C +175C +260C
1N3595 1N6099 FOLL3595 FDLL6099
00-35 00-35 LL-34 LL-34
500 mW
3.33 mW/oC
125 V 200 mA 500 mA 600 mA 1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF CHARACTERISTIC Forward Voltage MIN 0.83 0.79 0.75 0.65 0.60 0.52 MAX 1.0 0.92 0.88 0.80 0.75 0.68 1.0 300 500 3.0 3.0 8.0 150 UNITS V V V V V V nA nA nA itA itS pF V TEST CONDITIONS IF = 200 mA IF = 100 mA IF = 50mA IF = 10 mA IF = 5.0 mA IF = 1.0mA VR = 125 V VR = 30 V. TA = 125C VR = 125 V, TA = 125C VR = 125 V, TA = 150C IF
IR
Reverse Current
trr C BV
NOTES:
Reverse Recovery Time Capacitance Breakdown Voltage
VR
= 10 mA, Vr = 3.5 V, RL = 1.0 kG = 0, I = 1.0 MHz
IR = 100 itA
1. The maximum ratings ar. limiting values above which life or satisfactory performance may be impaired. 2. Thaae are steady atate limits. The factory should be consulted on applicationa involving pulled or low duty-cycle operation. 3. 1N3595 and IN8099 are electrically and mechanically identical.
4. For product family characteriltic curve.,. refer to Chapter 4, 02.
3-206
FAIRCHIL.D
1N3600/FDLL3600 1N4150/FDLL4150 1N4450/FDLL4450
High Conductance Ultra Fast Diodes

PACKAGES
t rr ... 4.0 ns (MAX) VF .. 1.0 V (MAX) @ 200 mA

ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Max Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Max Total Power Dissipation at 25C Ambient Linear Derating Factor (from 25C) Maximum Voltages and Currents WIV Working Inverse Voltage 10 Average Rectified Current IF DC Forward Current Recurrent Peak Forward Current if Peak Forward Surge Current if(surge) Pulse Width 1.0 s Pulse Width 1.0!Ls -65C to +200C +175C +260C
1N3600 1 N4150 1N4450 FOLL3600 FOLL4150 FOLL4450
00-35 00-35 00-35 LL-34 LL-34 LL-34
500 mW 3.33 mW/oC
lN3600
50 V 200 rnA 400 rnA 600 rnA 1.0 A 4.0 A
lN4150 50 V
200 rnA 400 rnA 600 mA 1.0 A 4.0 A
lN4450
30 V 200 rnA 400 rnA 600 rnA
1.0 A 4.0 A
= =
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) lN3600 lN4150 SYMBOL BV CHARACTERISTIC Breakdown Voltage 75 40 IR Reverse Current 100 50 100 50 VF Forward Voltage 0.54 0.66 0.76 0.82 0.87 C trr Capacitance Reverse Recovery Time (Note 3) 0.62 0.74 0.86 0.92 1.0 2.5 4.0 4.0 6.0 tfr Forward Recovery Time 10 0.42 0.52 0.64 0.80 0.54 0.64 0.76 0.92 1.0 4.0 V V nA nA IJ.A IJ.A V V V V V V pF ns ns ns ns IR = 5.0 !LA IR = 5.0 IJ.A VR = 50 V VR = 30 V VR = 50 V, TA = 150C VR = 30 V, TA = 150C IF IF IF IF IF IF MIN MAX lN4450 MIN MAX UNITS TEST CONDITIONS
= 0.1 rnA = 1.0 rnA = 10 rnA = 50 rnA = 100 rnA = 200 rnA
VR = 0, f = 1.0 MHz If = Ir = 10 rnA to 200 rnA, RL = 1000 If = Ir = lOrnA, RL = 100 0 If = Ir = 200 rnA to 400 rnA, RL = 1000 If = 200 rnA, tr Vfr = 1.0 V
= 0.4 ns,
NOTES. 1. Maximum ratings are limiting values above which life or satisfactory performance may be impaired. 2. These are steady state limits. The factory should be consulttld on applications involving pulsed or low duty cycle operation. 3. Recovery to 0.1 If. 4. For family characteristic curves, refer to Chapter 4, 04.
3-207
FAIRCHIL.D
1 N4009/FDLL4009
Ultra High Speed Diodes
t rr ... 2 ns (MAX) BV ... 35 V (MIN) @ 5 !J,A
PACKAGES 1N4009 FOLL4009
00-35 LL-34
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor Maximum Voltage and Current WIV Working Inverse Voltage 10 Average Rectified Current IF Continuous Forward Current Peak Repetitive Forward Current if Peak Forward Surge Current if (surge) Pulse Width 1s Pulse Width = 1 !J,s -65C to +200C +175C +260C If you need this device in the SOT package, an eleetieal equivalent is available. See FOS01200 family.
500 mW 3.33 mW/oC
25 V 100 mA 300 mA 400 mA 1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF IR BV trr CHARACTERISTIC Forward Voltage Reverse Current Breakdown Voltage Reverse Recovery Time 35 4.0 2.0 4.0 MIN MAX 1.0 0.1 100 UNITS V !J,A !J,A V ns ns pF TEST CONDITIONS IF
VR VR
Capacitance
= 30 rnA = 25 V = 25 V, TA = 150C IR = 5.0!J,A If = Ir = 10 rnA (Note 3) II = 10 rnA, Vr = 6.0 V, RL = 100 Q VR = 0,1 = 1.0 MHz
NOTES: 1. These ratings are limiting values above which the serviceability of the diode may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duly-cycle operation.
3. Recovery to 1.0 rnA. 4. For product family characteristic curves, refer to Chapter 4, D4
3-208
FAIRCHILD
1 N/FDLL4151/4152 1 N/FDLL4153/4154
High Speed Diodes
C ... 4 pF (MAX) 'rr.,.2 nS (MAX)@ 10 mA, -6 V, 100 U. ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor Maximum Voltage and Currents WIV Working Inverse Voltage -65C to +200C +175C +260C
PACKAGES 1 N4151 1 N4152 1 N4153 1 N4154 FOLL4151 FOLL4152 FOLL4153 FOLL4154
00-35 00-35 00-35 00-35 LL-34 LL-34 LL-34 LL-34
500 mW 3.33 mW/ C If you need this device in the SOT package, an electical equivalent is available. See FOS01200 family.
lN4151 50 V lN4152 30 V
10 IF if if (surge)
Average Rectified Current Continuous Forward Current Peak Repetitive Forward Current Peak Forward Surge Current Pulse Width = 1 s Pulse Width = 1 "'s
lN4153 50 V lN415425V 100 rnA 300 rnA 400 rnA 1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF CHARACTERISTIC Forward Voltage lN4154 lN4151 lN4152 &lN4153 MIN MAX 1.0 1.0 0,55 0.59 0.67 0.70 0.81 0.88 0.1 100 0.05 50 0,05 50 35 75 40 4.0 2.0 C
NOTES,
UNITS V V V V V V V V ",A ",A ",A ",A ",A ",A V V V ns ns pF
TEST CONDITIONS IF IF IF IF IF IF IF IF
0.49 0.53 0.59 0.62 0.70 0.74
= 30 rnA = 50 rnA = 0.1 rnA = 0,25 rnA = 1,0 rnA = 2.0 rnA = 10 rnA = 20 rnA
IR
Reverse Current
lN4154 1N4153 } 1N4151 1N4152
BV
Breakdown Voltage
1N4154 1N4153 } 1N4151 1N4152
Irr
Capacitance
4.0
= 25 V = 25 V, TA = 150C VR = 50 V VR = 50 V, TA = 150C VR = 30 V VR = 30 V,TA = 150C IR = 5,0 ",A IR = 5.0 ",A IR = 5.0 ",A If = 10mA, Ir = 10 rnA (Note 3) If = 10 rnA Vr = -6.0 V, RL = 100!l VR = 0, f = 1.0 MHz
VR VR
1. 2. 3. 4.
The maximum ratings are limiting values above which satisfactory performance may be impaired. These are steady state limits. The factory should be consulted in applications involving pulsed or low duty cycle operation. Recovery to 1.0 rnA. For product family characteristic curves, refer to Chapter 4, 04.
3-209
FAIRCHILO
1 N430S/1 N4307
Pai r and Quad Assemblies Diodes
The 1N4306 and 1N4307 are JAN assemblies of two and four glass diodes respectively. They feature tightly matched forward voltages over broad current and temperature ranges.
AVF ... 10 mV (MAX) C ... 2.0 pF (MAX)
PACKAGES 1N4306 1N4307
00-7 00-7
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Each Diode Linear Derating Factor (from 25C) Each Diode -65C to +150C +150C +260C
250mW 2.0 mW/oC
Maximum Voltage and Currents WIV Working Inverse Voltage 10 Average Rectified Current IF Continuous Forward Current if Recurrent Peak Forward Current if(surge) Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 IlS
50 V 200 mA 300 mA 600 mA

1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL BV IR VF CHARACTERISTIC Breakdown Voltage Reverse Current Forward Voltage 0.75 0.67 0.56 0.44 MIN 75 50 50 1.00 0.81 0.67 0.55 2.0 4.0 10 20 NOTES:
1. These are limiting values above which life or satisfactory performance may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. For product family characteristic curves, refer to Chapter 4, 04.
4. For teat circuits, refer to Chapter 4, 018.
MAX
UNITS V nA nA V V V V pF ns mV mV
TEST CONDITIONS IR
C trr AVF
Capacitance Reverse Recovery Time Forward Voltage Match (Note 4)
= 5.0 mA VR = 50 V VR = 50 V, TA = 150C IF = 50 mA IF = 10 mA IF = 1.0 mA IF = 100/lA VR = 0, f = 1 MHz If = Ir = 10 mA, RL = 100n

Recovery to 1 mA IF = 0.1 to 10 mA TA = -55Cto +125C IF = 10 to 50 mA TA = -55C to +125C
3-210
FAIRCHILD
1 N4728 through 1 N4752

1 W Silicon Zener Diodes
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 50C Ambient Linear Power Derating Factor (from 50C) Maximum Surge Power (Note 8) -65C to +200C +200C +260C
PACKAGES All Devices
DO-41
lW
6.67 mW/oC 10 W
ELECTRICAL CHARACTERISTICS (25C Ambient) SYMBOL Vz Nominal Zener Voltage (Note 4) @IZT V 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10.0 Zz Maximum Zener Impedance (Note 5) @tZT IZT Test Current ZZK Maximum Zener Knee Impedance (Note 5) @IZK IZK Test Current IR Maximum Reverse Current @VRT j.tA 100 100 50 10 10 10 10 10 10 10 10 10 10 VRT Test Voltage IZM Maximum Zener Current (Note 6) mA 276 252 234 217 193 178 162 146 133 121 110 100 91 iZ (surge) Maximum Zener Surge Current (Note 3) mA 1380 1260 1190 1070 970 890 810 730 660 605 550 500 454
Characteristic
UNIT IN4728 IN4729 IN4730 IN4731 IN4732 IN4733 IN4734 IN4735 IN4736 IN4737 IN4738 IN4739 IN4740
NOTES
0
10.0 10.0 9.0 9.0 8.0 7.0 5.0 2.0 3.5 4.0 4.5 5.0 7.0
mA 76.0 69.0 64.0 58.0 53.0 49.0 45.0 41.0 37.0 34.0 31.0 28.0 25.0
0
400 400 400 400 500 550 600 700 700 700 700 700 700
mA 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 0.5 0.5 0.5 0.25
V 1.0 1.0 1.0 1.0 1.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 7.6
1. 2. 3. 4. 5.
6. 7. B. 9.
These ratings are limiting values above which the serviceability of the diode may be impaired. These are steady stale limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. Non-recurrent square wave, PW = 8.3 ms, superimposed on Zener test current, IZTType numbers without suffix have 10% tolerance on nominal VZ' Type numbers with suffix A have 5% tolerance on nominal VZ' 1'he Zener impedances Zz and ZZK are derived by superimposing a 60 HZ signal on test currents IZT and IZK, having an RMS value of 10% of the d.c. value of IZT and IZK respectively. Maximum Zener Current (lZM) is based on the maximum Zener voltage of a 10% tolerance unit. VF::O: 1.2 V (max)@IF = 200 mA for all types. Non-recurrent square wave, PW = 8.3 ms, TA::O: 55C. Non-recurrent square wave. PW ::0: B.3 ms, TA ::0: 55C For product family characteristic curves, refer to Chapter 4,014.
3-211
1 N4728 through 1 N4752
ELECTRICAL CttARACTERISTICS (25C Ambient)
SYMBOL
Vz Nominal Zener Voltage (Note 4) @IZT V 11.0 12.0 13.0 15.0 16.0 18.0 20.0 22.0 24.0 27.0 30.0 33.0
Zz Maximum Zener Impedance (Note 5) @IZT
IZT Test Current
ZZK Maximum Zener Knee Impedance (Note 5) @IZK
IZK Test Current
IR Maximum Reverse Current @VRT p.A 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0
VRT Test Voltage
IZM Maximum Zener . Current (Note 6) rnA 83 76 69 61 57 50 45 41 38 34 30 27
iZ (surge) Maximum Zener Surge Current (Note 3) rnA 414 380 344 304 285 250 225 205 190 170 150 135
Characteristic
UNIT IN4741 IN4742 IN4743 IN4744 IN4745 IN4746 IN4747 IN4748 IN4749 IN4750 IN4751 IN4752
n
8.0 9.0 10.0 14.0 16.0 20.0 22.0 23.0 25.0 35.0 40.0 45.0
rnA 23.0 21.0 19.0 17.0 15.5 14.0 12.5 11.5 10.5 9.5 8.5 7.5
n
700 700 700 700 700 750 750 750 750 750 1000 1000
rnA 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25
V 8.4 9.1 9.9 11.4 12.2 13.7 15.2 16.7 18.2 20.6 22.8 25.1
3-212
FAIRCHIL.D
1 N5226 through 1 N5257

500 mW Silicon Zener Diodes
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 75C Ambient Linear Power Derating Factor (from 75C) Maximum Surge Power (Note 3) -65C to +200C +200C +260C
PACKAGES
All Devices
00-35
500mW 4.0 mW/oC
10 W
I
VRT TC
ELECTRICAL CHARACTERISTICS (25C Ambient unless otherwise noted) SYMBOL Characteristic Vz Zz IZT ZZK IR
Maximum Maximum Reverse Test Voltage Maximum Test Nominal Maximum Temperature Zener Zener Current Zener Knee Current@VRT Voltage Impedance Coefficient Impedance (Note 4) (Note 5) (Note 5)@ 10, 5, 2,1% 20, 10% 5, 2,1% 20% ofVZ (Note 6) IZK = 0.25 mA VzTolerance VZTolerance VZTolerance VzTolerance @IZT @IZT V 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0
{l
UNIT IN5226 IN5227 IN5228 IN5229 IN5230 IN5231 IN5232 IN5233 IN5234 IN5235 IN5236 IN5237 IN5238 IN5239 IN5240 IN5241
NOTES:
1. 2. 3. 4.
mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20
{l
JlA 100 100 75 50 50 50 50 50 50 30 30 30 30 30 30 30
JlA 25 15 10 5.0 5.0 5.0 5.0 5.0 5.0 3.0 3.0 3.0 3.0 3.0 3.0 2.0
V 0.95 0.95 0.95 0.95 1.9 1.9 2.9 3.3 3.8 4.8 5.7 6.2 6.2 6.7 7.6 8.0
V 1.0 1.0 1.0 1.0 2.0 2.0 3.0 3.5 4.0 5.0 6.0 6.5 6.5 7.0 8.0 8.4
%/OC
28 24 23 22 19 17 11 7.0 7.0 5.0 6.0 8.0 8.0 10 17 22
1600 1700 1900 2000 1900 1600 1600 1600 1000 750 500 500 600 600 600 600
-0.070 -0.065 -0.060 0.055 0.030 0.030 +0.038 +0.038 +0.045 +0.050 +0.058 +0.062 +0.065 +0.068 +0.075 +0.076
These ratings are limiting values above which the serviceability of the diode may be impaired. These are ateady state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. Non-recurrent aquare wave, PW = 8.3 rna, TA 55C. Type numbers without suffix have 20% tolerance on nominal VZ' Type numbers with suffix A have 10% tolerance on nominal VZ' Type numbers with suffix B have 5% tolerance on nominal VZ. Type numbers with suffix C have 2% tolerance on nominal VZ. Type numbers with suffix 0 have 1% tolerance on nominal VZ. 5. The Zener impedances Zz and ZZK are derived by superimposing a 60 HZ signal on test currents 'ZT and IZK' having an RMS value of 10% of the d.c. value of 'ZT and IZK respectively. 8. Maximum temperature coefficients apply to 10.5.2 and 1% tolerance types only and are measured under the following conditions: IN5226A. B. C. 0 through IN5242A. B. C. 0: IZ = 7.5 mA, T, = 25C. T2 = 125C.
IN5242A, B, C, 0 Ih,ough IN5257A, B. C, 0: IZ = IZT, T, = 25C. T, = 125C.

7. VF = 1.1V (maximum)@IF = 200 mA for all types. 8. For product family characteristic curves. refer to Chapter 4. 013.
3-213
1 N5226 through 1 N5257
ELECTRICAL CHARACTERISTICS (25C Ambient unless otherwise noted) SYMBOL Characteristic Vz Zz IZT ZZK IR VRT TC
Test Voltage Maximum Nominal Maximum Test Maximum Maximum Reverse Zener Zener Current Zener Knee Temperature Current @ VRT Coefficient Impedance Voltage Impedance (Note 5) @ 20% 10,5,2, 1% 20, 10% 5, 2, 1% (Note 4) (Note 5) of Vz (Note 6) IZK = 0.25 mA VzTolerance VZTolerance VZTolerance VZTolerance @IZT @IZT V 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 20.0 22.0 24.0 25.0 27.0 28.0 30.0 33.0
UNIT IN5242 IN5243 IN5244 IN5245 IN5246 IN5247 IN5248 IN5249 IN5250 IN5251 IN5252 IN5253 IN5254 IN5255 IN5256 IN5257
fl
30 13 15 16 17 19 21 23 25 29 33 35 41 44 49 58
mA 20 9.5 9.0 8.5 7.8 7.4 7.0 6.6 6.2 5.6 5.2 5.0 4.6 4.5 4.2 3.8
fl
600 600 600 600 600 600 600 600 600 600 600 600 600 600 600 700
itA
itA 1.0 0.5 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1
V 8.7 9.4 9.5 10.5 11.4 12.4 13.3 13.3 14.3 16.2 17.1 18.1 20.0 20.0 22.0 24.0
V 9.1 9.9 10.0 11.0 12.0 13.0 14.0 14.0 15.0 17.0 18.0 19.0 21.0 21.0 23.0 25.0
%/OC
10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10
+0.077 +0.079 +0.082 +0.082 +0.083 +0.084 +0.085 +0.086 +0.086 +0.087 +0.088 +0.089 +0.090 +0.091 +0.091 +0.092
3-214
FAIRCHILD
1N5282
High Conductance Ultra Fast Diodes
BV ... 80 V (MIN)@ 5.0 /lA C ... 2.SpF@VR=OV,f=1.0MHz t rr ... 4.0 n8 @ If = Ir = 10 mA to 200 mA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25 Ambient Linear Derating Factor (from 25C) Maximum Voltage and Currents WIV Working Inverse Voltage Average Rectified Current 10 Continuous Forward Current IF Peak Forward Surge Current if(surge) Pulse Width = 1.0 s Pulse Width = 1.0 /lS -65C to +200C +175C +260C
PACKAGES 1N5282
DO-35
500 mW
3.33 mW/oC
55 V 200 mA 300 mA 1.0 A 4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF CHARACTERISTIC Forward Voltage MIN 1.05 0.92 0.80 0.67 0.55 0.45 MAX 1.30 1.10 0.90 0.725 0.60 0.49 100 100 80 4.0 2.0
10
UNITS V V V V V V nA /lA V ns ns ns V pF
TEST CONDITIONS IF IF IF IF IF IF = = = = = = 500 mA 300 mA 100 mA 10 mA 1.0 mA 0.1 mA
IR BV trr trr tfr Vpk

I
Reverse Current Breakdown Voltage Reverse Recovery Time (Note 3)' Reverse Recovery Time Forward Recovery Time Peak Forward Voltage Capacitance
VR = 55 V VR = 55 V, TA = 150C IR = 5.0 /lA If = Ir = 10 mA to 200 mA RL = 100!l If = 10 mA, Vr = 6.0 V If = 200 mA (Note 4) If = 500 mA (Note 5) VR = O,f = 1.0 MHz
2.0 2.5
NOTES: 1. The maximum ratings are limiting values above which life or satisfactory performance may be impaired. 2. These are steady-state limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. Recovery to 0.1 'r4. t r ""'O.4ns,Vfr= 1.0,V,pula8width= 100ns;dutycycle...,:;;; 1%. 5. Ir = 8.0 ns, pulse width 1.0 ,us; duty cycle ~ 1%. 6. For product family characteristics curves, refer to Chapter 4, 04.
3-215
FAIRCHILO
A. Schlumberger Company
1 N5768/1 N5770/1 N5772 1N5774/FAS05768/FAS05770 FAS05772/FAS05774

PACKAGE 1N5768 1N5770 1N5772 1N5774 FAS05768 FAS05770 FAS05772 FAS05774
BV ... 60V@10/IA IR ... 100 nA@40 V VR ... 1 V @ 100 mA ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Junction Operating Temperature Range Maximum Power Dissipation Maximum Total Dissipation at TA linear Derating Factor -65C to +200C -65C to +200C
TO-85 TO-85 TO-85 TO-86 8-S01C 8-S01C 8-S01C 14-S01C
= 25C
500 mW 4.0 mW 1C above 25C
Maximum Currents 10 Average Rectified Current (each diode) 300 mA Linear Derating Factor 2.4 mAl C above 25C IFSM Peak Forward Surge Current Pulse Width = B.3 ms 500 mA
For SOIC power dissipation, consult factory. ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL BV VF CHARACTERISTIC Breakdown Voltage Forward Voltage MIN 60 1.0 1.5 1.0 MAX UNITS V V V V TEST CONDITIONS IR = 10 /lA, Pulse Width = 100 /IS, Duty Cycle"'; 20% IF = 100 mA IF = 500 rnA, Pulse Width 300 ns, Duty Cycle = 2%
VFX
Forward Voltage
IF = 25 rnA; IF = 25 rnA lor each 01 the other Diodes in the Test Section (Note 3) IF = 500 mA, Pulse Width = 150 ns, Duty Cycle ~2% VR = 40 V VR = 40 V, TA = +150C VR = 40 V, IF = 25 mA lor each 01 the other Diodes in the Test Section (Note 3) VR = 40 V (Note 4) VR=OV,I= 1.0 MHz VR = 0 V, I = 1.0 MHz I, = 500 rnA, RS = 100, V'r = 1.8 V, tr = 15 ns Max I, = 200 rnA, Ir = 200 mA, RL = 100 0, Irr = 20 rnA
VFM IR IRX
Peak Forward Voltage Reverse Current Reverse Current
5.0 100 50 10
V nA /l A /l A
IRi C
Isolation Current lN5772, lN5774 Pin-to-Pin Capacitance (Note 2) lN5768 lN5770, lN5772, lN5774 Forward Recovery Time (Note 5) Reverse Recovery Time (Note 5)
O.B 4.0 8.0 40 20
/lA pF pF ns ns
tlr trr
NOTES. 1. The maximum ratings Ir. limiting values above which life or satiafactory performance may be impaired. 2. This parameter i8 the total pinto-pin capacitance measured acr088 each diode. This does not necessarily represent actual diode capacitance since other diode interconnectiona can contribute additional capacitance. 3, Each common anode aection and I or common cathode section iested separately. 4. The isolation current shall be measured between any two interconnect pins of adjacent parallel sets of diodes with all other pins open Circuited. 5. For Product Family characteristic curves and Teat Circuits. reter to Chapter 4.015.
3-216
1 N5768/1 N5770/1 N5772 1 N5774/FAS05768/FAS05770 FAS05772/FAS05774
Connection Diagrams
ffffffffl
2 3
5 6 7 8
'0
1N5768
FAS05768
I
8
9 10
+fffffffl
5 6 7
1N5770
FAS05770
1N5771
FAS05772
1N5774
FAS05774
3-217
FAIRCHILD
1 N6100/1 N6101 FAS06101

C ... 3.0 pF (MAX) AVF .. 10 mY (MAX) 0 10,.A

ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Dissipation per Junction at 25C Ambient Maximum Dissipation per Package at 25C Ambient Linear Derating Factor (from 25 C) Junction Package Maximum Voltage and Currents WIV Working Inverse Voltage IF Continuous Forward Current if(surge) Peak Forward Surge Current Pulse Width = 1.0 s Pulse Width = 1.0 /-IS For SOIC power dissipation, consult factory. -55C to +200C +175C +260C
Connection Diagrams
7654321
fffffff
8 9 10 11 12 13 14
PACKAGES
400mW 600mW 2.67 mW/oC 4.0 mW/oC
1N6100 1N6101 FAS06101
TO-86 TO-116-2 14-S01C
65 V 350-mA 1.0 A 2.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL BY IR VF VFM IRX VFX C tfr trr AVF CHARACTERISTIC Breakdown Voltage Reverse Current (Note 4) Forward Voltage (Note 3) Peak Forward Voltage Reverse Current (Note 5) Forward VO.ltage (Note 5) CapaCitance Forward Recovery Time (Note 6) Reverse Recovery Time (Note 6) Forward Voltage Match (Note 6) MIN 75 25 50 1.0 5.0 10 1.0 3.0 15 5.0 10 MAX UNITS V nA p.A V V p.A V pF ns ns mV TEST CONDITIONS IR = 5.0 /-IA VR = 20 V VR = 20 V, TA = 150C IF = 100 mA IF = 100 p.A, PW = 100 ns Duty Cycle ::52% VR = 40 V IF = 25 mA VR = 0, f = 1 MHz If = 100 rnA, RS = 50 {l Vfr= 1.1V,tr ::5 IOns If = Ir = 10 rnA Irr = 1.0 rnA, RL = 100 {l IF = 10 rnA
NOTES. 1. Theae ratingl are limiting values above which life or satisfactory performance may be impaired. 2: Thel. are steady atate limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. VF i8 measured using an 8 rna pulae. 4. -S.e Te8t circuits (Note e) for measurement of reverse current of an individual diode. 5. IF .. 25 mA for each of the other diodes in the array. 6. For product family charN:terlatic curves and test circuits, refer to Chapter 4, 015.
3-218
FAIRCHIL.D
1544
General Purpose Switching Diode
BV ... 50 V (MIN)@ l00)LA t rr ... 8.0 n8 (MAX) ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Power Dissipation at 25C Ambient Linear Power Derating Factor (from 25C) Maximum Voltage and Currents Working Inverse Voltage WIV Average Rectified Current 10 Continuous Forward Current IF Peak Repetitive Forward Current if Peak Forward Surge Current if (surge) Pulse Width = 1 s Pulse Width 1 )LS -65C to +200C +175C +260C
PACKAGES 1S44
DO-35
500 mW 3.33 mW/oC
40 V 100 mA 300 mA 400 mA

~.O
4.0 A
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL VF IR BV C CHARACTERisTIC Forward Voltage Reverse Current Breakdown Voltage Capacitance Stored Charge Reverse Recovery Time 50 4.0 120 8.0 MIN 0.65 0.70 MAX 1.00 1.20 50 UNITS V V nA V pF pC ns TEST CONDITIONS IF = 10 mA IF = 30 mA VR = 10 V IR = 100)LA VR = 0, f = 1 MHz IF = 10 mA, VR = 10 V If = Ir = 10 mA Recovery to 1 mA
as
trr
NOTES: 1. These ratings are limiting values above which the serviceability of the diode may be impaired. 2. These are steady stale limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. For product family chsll8cteriatic CUNes, n~f8f' to Chapter 4, 04
3-219
F=AIRCHIL.O
1S920/921/922/923 FD LL920/921/922/923
VF ... 1.2 (MAX) @ 200 mA IR ... 100 nA (MAX)@ RATED WIV
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Range Maximum Junction Operating Temperature Lead Temperature Power Dissipation (Note 2) Maximum Total Dissipation at 25C Ambient Linear Derating Factor (from 25C) Maximum Voltage and Currents lS920 Working Inverse Voltage 50 V (-65C to + 100C) Average Forward Current 200 mA 10 Recurent Peak Forward Current 600 mA if if(surge) Peak Forward Surge Current Pulse Width = 1 s 1.0 A Pulse Width = 1 /-IS 4.0 A WIV 15921 WOV 200 mA 600 mA 1.0 A 4.0 A 15922 150 V 200 mA 600 mA 1.0 A 4.0 A 15923 200 V 200 mA 600 mA 1.0 A 4.0 A -65C to +200C +175C +260C
PACKAGES 18920 18921 18922 18923 FDLL920 FDLL921 FDLL922 FDLL923
00-35 00-35 00-35 00-35 LL-34 LL-34 LL-34 LL-34
500 mW 3.33 mW/oC
If you need this device in the 80T package, an electical equivalent is available. 8ee FD801400 family.
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) SYMBOL IR VF C CHARACTERISTIC Inverse Current Forward Voltage Capacitance Stored Charge MIN MAX 100 10 1.2
6.5
UNITS nA /-I A V pF nC
TEST CONDITIONS VR = rated WIV VR = rated WIV. TA IF = ::00 mA VR
= 100C
Os
NOTES.
2~ These are steady
12
IF = 10 mA, VR
= 0, f = 1 MHz = 10 V
1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. atate limits. The factory should be consulted on applications involving pulsed or low duty-cycle operation. 3. For product family characteristic curves, refer to Chapter 4, 01.
3-220
FAIRCHILD
2N697
NPN General Purpose
These transistors are designed for high-performance amplifier, oscillator and some switching applications. They perform at frequencies from dc to VHF and over more than 3 decades of current. Superior replacements offering PLANAR reliability and performance are available as the 2N1613, 2N1711 and 2N718A.
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Tem peratu re Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCBO Collector to Base Voltage VCER Collector to Emitter Voltage (RBE ~ 10 .0) (Note 4) VEBO Emitter to Base Voltage
PACKAGE 2N697
TO-39
-65 C to 200 C 175C
0.8W 3.0W
60 V 40V 5.0 V
SYMBOL ICBo
CHARACTERISTIC Collector Cutoff Current
MIN
MAX 1.0 100
UNITS
TEST CONDITIONS VCB = 30 V, IE = 0 VCB = 30 V, IE = 0 TA = 150C Ie = 150 mA, VCE = 10 V Ic = 50 mA, VCE = 10 V, f = 20 mc
JJ.A JJ.A
hFE h'e VCE(satl

VSElsatl
DC Current Gain (Note 5) High Frequency Current Gain Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Output Capacitance
40 2.5
120 1.5 1.3 35 V V pF
le=150mA,IB=15mA Ic = 150 mA, 18 = 15 mA VC8 = 10 V, IE = 0
COb
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum iunction temperature of 175C and junction-to-case thermal resistance of 75C/W (derating factor of 13.3 mWrC). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length ~ 300 /JS: duty cycle ~ 1%. 6. For product family characteristic curves. refer to Curve Set T145.
3-221
FAIRCHILD
2N/MPS/FTS0706 MPS/FTS0706A
NPN High Speed Logic Switches
VCER ... 20 V (Min) @ 10 mA hFE ... 20 (Min) @ 10 mA To 60 ns (Max) 2N/MPS/FTS0706), 25 ns (Max) (MPS/FTS0706A) . Complements ... MPS3640 (TO-92)
PACKAGE 2N70S MPS706 MPS706A FTS070S. FTS070SA
TO-11BA TO-92 TO-92 TO-236AAIAB TO-23SAAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCBo Collector to Base Voltage VCER Collector to Emitter Voltage (RBE';;; 10 0) (Note 4) VEBO Emitter to Base Voltage 2N MPS/FTSO -S5C to 175C -55C to 1500C 175C 150C
2N 0.3mW 1.0W 706 25 V 20V
MPS 0.625 W 1.0W 706A 25V 20V
FTSO 0.350 W*
3.0 V
5.0 V
Electrical Characteristics (25 C Ambient Temperature unless otherwise noted) (Note S)

SYMBOL CHARACTERISTIC BVcEo BVCER BVcBo lEBO ICBO hFE Collector to Emitter Breakdown Voltage Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain (Note 5) 20 MPS70S MIN MAX 15 20 25 10 500 20 706A MIN MAX 15 20 25 10 500 SO UNITS V V V p.A nA Ic Ic Ic TEST CONDITIONS
= 10 mA,
IB
=0
= 10 mA, RBE = 100 = 10 p.A,

IE
=0
= 3.0 V, Ic = 0 VCB = 15 V, IE = 0 Ic = 10 mA, VCE = 1.0 V

VEB
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 175C and junction-to-case thermal resistance of 150 CIW (derating factor of 6.7 mW/oC) for 2N706. These ratings give a maximum junction temperature of 150 Cand (TO-92) junction-to-case thermal resistance of 125 CIW (derating factor of 8.0 mWr C); junction-to-ambient thermal resistance of 2000 CIW (derating factor of 5.0mWrC) for M PS706 and MPS706A; (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length';; 12 1"'; duty cycle = 1% for MPS70S, MPS70SA; length = 300l's; duty cycle = 1% for 2N70S. S. For product family characteristic curves, refer to Curve Set T132 for 2N70S; T1S2 for MPS70S and MPS706A. Package mounted on 99.5% alumina 8 mm x 8 mm x O.S mm.
3-222
2N/MPS/FTS0706 MPS/FTS0706A
ELECTRICAL CHARACTERISTICS (25 0 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL
VCE(sati
CHARACTERISTIC Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance High Frequency Current Gain Base Resistance Charge Storage Time Constant (test circuit no. 3111) Turn On Time (test circuit no. 589) Turn Off Time (test circuit no. 589)
MPS706 MIN MAX 0.6 0.9 6.0 2.0 50 60 40 75
706A MIN MAX 0.6 0.7 0.9 6.0 2.0 50 25 40 75
UNITS V V pF
TEST CONDITIONS
Ie = 10 mA, la = 1.0 mA
Ic=10mA,la=1.0mA Vca = 10 V, IE = 0, f= 100 kHz Ic = 10 mA, VCE = 15 V, f = 100 MHz
VBE(sat)
Cob hie rb'

Ts
n
ns ns ns
IE = 10 mA, VCE = 15 V, f = 300 MHz Ic = 10 mA, Vcc = 10 V, IB1 = IB2 = 10 mA Ic = 10 mA, IBI = 3.0 mA, Vcc = 3.0 V Ic = 10 mA, IBI = 3.0 mA, la2 = 1.5 mA, Vcc = 3.0 V
ton toff
SYMBOL BVcER BVcao Icao hFE

VeE (sat)
CHARACTERISTIC Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Collector Cutoff Current DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance High Frequency Current Gain Charge Storage Time Constant (test circuit no. 3111)
2N706 MIN MAX 20 25 300 20 0.6 0.6 6.0 2.0 60
UNITS V V nA V V pF
TEST CONDITIONS Ic = 10 mA, RBE = 10 Ic = 10 /lA, IE = 0 Vca = 15 V, IE = 0 Ie = 10 mA, VCE = 1.0 V 1e=10mA,la=1.0mA Ic = 10 mA, la = 1.0 mA Vea = 10 V, IE = 0, f = 100 kHz Ie = 10 mA, VeE = 15 V, f = 100 MHz
VBEcsatJ
Cob hie
Ts
ns
Ie = 10 mA, Vce = 10 V, IBI = IB2 = 10 mA
3-223
FAIRCHIL.D
2N718A 2N1613
VCEO ... 32 V (Min) hFE ... 40-120 @ 150 mA, 20 (Min) @ 500 mA
PACKAGE 2N718A 2N1613
TO-18
TO-5

Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 100 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEo Collector to Emitter Voltage VCER Collector to Emitter Voltage (RBE':;;; 100) (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage
-65 to 200C 200C
718A
0.5mW 1.0 mW 1.8 W
1613
0.8W 1.7 W 3.0W
32 V 50V 75 V 7.0 V

SYMBOL BVcBo BVEBo lEBO ICBO hFE hFE CHARACTERISTIC Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Current Collector Cutoff Current DC Current Gain DC Pulse Current Gain (Note 5) 20 40 35 20 20 120 MIN 75 7.0 10 10 10 MAX UNITS V V nA nA JiA TEST CONDITIONS Ic = 0.1 mA, IE = 0 IE = 0.1 mA, Ic = 0 VEB = 5.0 V, Ic = 0 VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150C Ic = 0.1 mA, VCE = 10 V Ic =150mA,VcE =10V IIC=10mA,VCE=10V Ic = 500 mA, VCE = 10 V , Ic = 10 mA, VCE = 10 V, TA = -55 C
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200" C and junction-to-case thermal resistance of 97.2" C (derating factor of 10.3 mW/o C); junction-to-ambient thermal resistance of 3500 CIW (derating factor of 2.B6 mWr C) for 2N71BA; junction-to-case thermal resistance of 58.30 ClW (derating factor of 17.2 mW/o C) junction-to-ambient thermal resistance of 2190 C (derating factor of 4.56 mWr C) for 2N1613. 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ~s; duty cycle';; 1%. 6. For product family characteristic curves, refer to Curve Set T145.
3-224
2N718A12N1613

SYMBOL CHARACTERISTIC
VCERfSUSI
MIN 50
MAX
UNITS V Ie Ic Ie
TEST CONDITIONS
Collector to Emitter Sustaining Voltage (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance Input Capacitance High Frequency Current Gain Small Signal Current Gain Input Resistance Output Conductance Voltage Feedback Ratio (test circuit no. 287) Noise Figure
= 100 mA = 150 mA, = 150 mA,
(pulsed). RBE IB IB
10
VCElsatl VBElsatl Cob CTE hie hie hib hob hrb td
1.5 1.3 25 80 3.0 30 35 24 4.0 0.05 0.1 100 150 34 8.0 0.5 1.0 3.0 3.0 30 12
V V pF pF
= 15 mA = 15 mA
n n
Mmho Mmho x10-4 x10- 4 ns dB
+ tr + tl
NF
= 10 V, IE = 0 = 0.5 V, Ie = 0 Ic = 50 mA, VCE = 10 V, f = 20 MHz Ic = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz Ic = 5.0 mA, VCE = 10 V, f = 1.0 kHz Ic = 1.0 mA,VcB = 5.0 V, f = 1.0 kHz Ic = 5.0 mA, VCB = 10 V, f = 1.0 kHz Ic = 1.0 mA, VCB = 5.0 V, f = 1.0 kHz Ic = 5.0 mA, VCB = 10 V, f = 1.0 kHz Ic = 1.0 mA, VCB = 5.0 V, f = 1.0 kHz Ic = 5.0 mA, VCB = 10 V, f = 1.0 kHz Ic = 50 mA, Vcc = 20 V Ic = 0.3 mA, VCE = 10 V, f = 1.0 kHz, Rs = 510 n BW = 1.0 Hz
VeB VEB
3-225
FAIRCHILO
2N930/PN930/FTS0930
VeEo ... 45 V (Min) hFE ... 100-300 @ 10 rnA NF ... 3.0 dB (Max) @ 1.0 kHz
PACKAGE 2N930 PN930 FTS0930
TO-18 TO-92 TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VeEO Collector to Emitter Voltage (Note 4) VeBo Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current PN/FTSO 2N -55 C to 150 C -65 C to 200 C 150C 175C
PN 0.625 W 1.0 W
2N 0.3W 0.6W
FTSO 0.350 W'
45 V 45 V 5.0 V 30 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVEBO leEo leBo lEBo leES hFE hFE Emitter to Base Breakdown Voltage Collector to Emitter Cutoff Current Collector Cutoff Current Emitter to Base Cutoff Current Collector to Emitter Cutoff Current DC Pulse Current Gain (Note 5) DC Current Gain 150 100 20 MIN 5.0 2.0 10 10 10 10 600 300 MAX UNITS V nA nA nA nA p.A TEST CONDITIONS Ie = 0, IE = 10 nA VeE = 5.0 V, IB = 0 VeB=45V,IE =0 VEB = 5.0 V, Ie = 0 VeE = 45 V, VEB = 0 VeE = 45 V, VEB = 0, TA = HOC Ie = 10 mA, VeE = 5.0 V Ie = 500 p.A, VeE = 5.0 V Ie = 10 p.A, VeE = 5.0 V Ie = 10 p.A, VeE = 5.0 V, TA =-55C
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 175C and junction-to-case thermal resistance of 250C/W (derating f~ctor of 4.0 mWrC); junction-to-ambient thermal resistance of 500 C/W (derating factor of 2.0 mW/C) for 2N930; (TO-92) junction-to-case thermal resistance of 125C/W
(derating factor of 8.0 mW/ o C); junction-ta-ambient thermal resistance of 200 0 CIW (derating factor of 5.0 mW;o C). (TO-236) junction-ta-ambient
4. 5. 6.
thermal resistance of 35.r ClW (derating factor of 2.8 mWr C). Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length';; 300 !,s; duty cycle';; 2%. For product family characteristic curves, refer to Curve Set Tl07. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-226
2N930/PN930/FTS0930
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL VCEOlsusl VCElsatl
VBElsat)
CHARACTERISTIC Collector to Emitter Sustaining Voltage' (Notes 4 & 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance Small Signal Current Gain High Frequency Current Gain Input Resistance Output Conductance Voltage Feedback Ratio Noise Figure
MIN 45
MAX
UNITS V Ic Ic Ic
TEST CONDITIONS
= 10 mA, = 10 mA, = 10 mA,
16
= 0 (pulsed) = 0.5
mA
1.0 0.6 1.0 8.0 150 1.0 25 32 1.0 600 3.0 600
V V pF
Ie Ie
= 0.5 mA
Cob hfe hfe hib hob h,b NF
Vce Ic
!1 /lmho
X1(J6
dB
= 5.0 V, IE = 0 = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz Ic = 500 /lA, VCE = 5.0 V, f = 30 MHz Ic = 1.0 mA, Vce = 5.0 V, f = 1.0 kHz Ic = 1.0 mA, Vce = 5.0 V, f = 1.0 kHz Ic = 1.0 mA, Vce = 5.0 V, f = 1.0 kHz Ic = 10~, VCE = 5.0 V, f = 1.0 kHz Rs = 10 k!1, BW = 15.7 kHz
3-227
FAIRCHILD
2N930A/FTS0930A
PACKAGE 2N930A FTS0930A
TO-18 TO-236AA/AB
-65 C to 200 C 175C
2N 0.5 W 1.8 W
FTSO 0.350'
45 V 60 V 6.0 V 30mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVCEO BVCBO BVEBO lEBO ICBO ICEO ICES hFE Collector to Emitter Breakdown Voltage (Notes 4 & 5) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current DC Current Gain 150 100 60 30 MIN 45 60 6.0 2.0 2.0 2.0 2.0 300 MAX UNITS V V V nA nA nA nA TEST CONDITIONS Ic = 10 mA (pulse) Ic = 10 IE = 10
J.LA, J.LA,
IE = 0 Ic = 0
VEB = 5.0 V, Ic = 0 VCE = 45 V, IE = 0 VCE = 5.0 V, IB = 0 VCE = 45 V, VEB = 0 Ic = 500 J.LA, VCE = 5.0 V Ic = 10 J.LA, VCE = 5.0 V Ie = 1.0 p.A, VCE = 5.0 V Ie = 10 p.A, VCE = 5.0 V, TA = -55C Ic = 10 mA, VCE = 5.0 V
hFE VCElsatl
DC Pulse Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5)
600 0.5
V
Ie = 10 mA, IB = 0.5 mA
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 17SoC and junction-to-case thermal resistance of 2S0CIW (derating factor of 4.0 mW/C); junction-to-ambient thermal resistance of SOOC/W (derating factor of 2.0 mW/oC); (TO-236) junction-to-ambient thermal resistance of 3STCIW (derating factor of 2.8 mW/oC). 4. Rating refers to a high current point where collector to emitter voltage is lowest. S. Pulse conditions: length';; 300 J'S; duty cycle';; 2%. 6. For product family characteristic curves. refer to Curve Set Tl07. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-228
2N930A/FTS0930A

SYMBOL
VSE(sat)
CHARACTERISTIC Base to Emitter Saturation Voltage) (Note 5) Output Capacitance Small Signal Current Gain High Frequency Current Gain Input Resistance Output Conductance Voltage Feedback Ratio Noise Figure
MIN 0.7
MAX 0.9 6.0
UNITS V pF Ic
TEST CONDITIONS
= 10 rnA, = 5.0 V,
IB IE
= 0.5
rnA
Cob hfe hfe hib hOb hrb NF
150 1.5 25
600 32 1.0 600 3.0 n /J-mhos x10- 6 dB
=0 Ie = 1.0 rnA, VeE = 5.0 V, f = 1.0 kHz Ie = 50 /J-A, VeE = 5.0 V, f = 30 MHz IE = 1.0 rnA, VeB = 5.0 V, f = 1.0 kHz IE = 1.0 rnA, VeB = 5.0 V, f = 1.0 kHz IE = 1.0 rnA, VeB = 5.0 V, f = 1.0 kHz Ie = 10 ~, VeE = 5.0 V, BW = 10 cps to 10 kHz, RG = 10 kn
VCB
3-229
FAIRCHILD
2N1132A
PNP Transistor Medium Power Voltage Speed Switch & Frequency Amplifier
PACKAGE 2N1132A

Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature 100 C Case Temperature Derating Factor above 250 C Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCER Collector to Emitter Voltage R:;;;; 10 T VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Collector Current Ic
TO-39
0.6mW 2.0W 1.0 W 40 mW/o C min.
40 V 50 V 60V 5.0 V 600 mA

SYMBOL CHARACTERISTIC BVcEo BVcBo BVEBo lEBO ICBO ICER Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current Collector Cutoff Current MIN 40 60 5.0 100 0.5 50 10 MAX UNITS V V V /J. A /J. A /J.A mA Ic Ic IE TEST CONDITIONS
= 10 mA, = 100 /J.A,
IB IE
=0 =0
= 1.0 mA, Ic = 0 = 4.0 V, Ic = 0 VCB = 45 V, IE = 0 VCB = 45 V, IE = 0, TA = 150C VCE = 50 V, RBE < 10 n, VCE = 30V, VBE = 1.5 V (reverse bias) Tc = 1500 C
VEB
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 2000 C and junction-to-case thermal resistance of 58.30 CIW (derating factor of 17.2 mW/ o C); junction-to-ambient thermal resistance of 292" C/W (derating factor of 3.42 mW/o C). 4. Rating refers to a high current paint where collector to emitter voltage is lowest. 5. Pulse conditions: length';; 2% duty cycle, and';; 1.2 ms pulse duration. 6. For product family characteristic curves, refer to Curve Set T212.
3-230
2N1132A

SYMBOL hFE VCE(sa!) VBE(Satl Cob Cib hIe hIe hib CHARACTERISTIC DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance Input Capacitance AC Current Gain High Frequency Current Gain Input Impedance 25 25 30
MIN
30 25
MAX 90 1.5 1.3 30 80 75 3.0 35 10
UNITS
TEST CONDITIONS Ic = 150 mA, VCE = 10 V Ic = 5 mA, VCE = 10 V
V V pF pF
Ic = 150 mA, IB = 15 mA Ic = 150 mA, VCE = 15 V VCB = 10 V, IE = 0, f = 1.0 MHz VBE = 0.5 V, Ic = 0, f = 1.0 MHz Ic = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz Ie = 5.0 mA, VCE = 10V, f = 1.0 kHz Ic = 50 mA, VCE = 10 V, f = 20 MHz
n n
}lmhos }lmhos X1Q-4 X1Q-4 ns ns
Ic = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz Ie = 5.0 mA, VCE = 10 V, f = 1.0 kHz Ic = 1.0 mA, VCE = 5.0 V, f=1.0kHz Ic = 5.0 mA, VCE = 10 V, f = 1.0 kHz Ic = 1.0 mA, VCE = 5.0 V, f=1.0kHz Ic = 5.0 mA, VCE = 10 V, f = 1.0 kHz Ic = 150 mA, IB1 = 15 mA (see figure 1) Ic = 150 mA, IB1 = 15 mA
hOb
Output Conductance
1.0 5
hrb
Voltage Feedback Ration
8.0 8.0
ton
toft
Turn On Time (td Turn Off Time
+ td)
45 50
3-231
FAIRCHILD
2N1890
NPN High Voltage Amplifier & Oscillator Type
ABSOLUTE MAXIMUM. RATINGS (Note 1)

Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCER Collector to Emitter Voltage (RBE ':;; 100) (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage
PACKAGE
2N1890 TO-39
-65 C to 200 C 175C
0.8W 3.0W
60 V 80V 100 V 7.0 V

SYMBOL BVcBo BVEBO ICBO lEBO hFE h,e CHARACTERISTIC Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Pulse Current Gain (Note 5) High Frequency Current Gain (Note 5) 100 3.0 MIN 100 7.0 10 15 10 300 MAX UNITS V V nA p,A nA Ic TEST CONDITIONS
= 0, IE = 0.1 mA Ic = 0, IE = 0.1 mA VCB = 75 V, IE = 0 VCB = 75 V, IE = 0, TA = 150C VEB = 5.0 V, Ic = 0 Ic = 150 mA, VCE = 10 V Ic = 50 mA, VCE = 10 V, f = 20 MHz
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operalions. 3. These ratings give a maximum iunction temperature of 200' C and iunction-Io-case thermal resistance of 58.3' C/W (derating factor of 17.2 mW/' C. 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: lenglh = 300 ~s; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T149.
3-232
2N1890
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC h'e hib hie hob hrb VeElsall VBElsall
VeER/suS)
MIN 50 70 2.0 4.0 4.0
MAX 200 300 3.0 8.0 8.0 0.3 0.3 1.50 1.50 1.2 5.0 0.9 1.3
UNITS Ie Ie
TEST CONDITIONS
Small Signal Current Gain Input Resistance Input Resistance Output Conductance Voltage Feedback Ratio Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage (Note 5) Collector to Emitter Sustaining Voltage (Note 4) Collector to Emitter Sustaining Voltage (Note 5) Output Capacitance Emitter Transition Capacitance
n n kn n
~mho ~mho
x10- 4 x10- 4 V V V V V V
80 60 15 85
= 1.0 mA, VeE = 5.0 V = 5.0 mA, VeE = 10 V Ie = 1.0 mA, Ve8 = 5.0 V Ie = 5.0 mA, Ve8 = 10 V Ie = 1.0 mA, VeE = 5.0 V Ie = 5.0 mA, VeB = 10 V Ie = 1.0 mA, VeB = 5.0 V Ie = 5.0 mA, VeB = .10 V Ie = 1.0 mA, VeB = 5.0 V Ie = 5.0 mA, VeB = 10 V Ie = 50 mA, 18 = 5.0 mA Ie = 150 mA, IB = 15 mA Ie = 50 mA, IB = 5.0 mA Ie = 150 mA, 18 = 15 mA Ie = 100 mA (pulsed), RBE ~ 10 n
Ie = 30 mA (pulsed), IB = 0
VeB VEB
VCEO(SUS)
Cobc CTE
pF pF
= 10 V, IE = 0 = 0.5 V, Ie = 0
3-233
FAIRCHILD
2N1893
Po ... 800 mW @ TA = 25C VCEO ... 80 V (Min) hFE ... 40-120 @ 150 mA Complements ... 2N4013 (TO-39), MPSA56 (TO-92)
PACKAGE 2N1893
TO-39
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -65 C to 200 C Operating Junction Temperature 175C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 100 C Case Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCER Collector to Emitter Voltage (RBE ~ 10fl) (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage
0.8 W 1.7 W 3.0W
80 V 100 V 120 V 7.0 V
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVEBO BVcBo ICBO lEBO hFE CHARACTERISTIC Emitter to Base Breakdown Voltage Collector to Base Breakdown Voltage Collector Cutoff Current Emitter to Base Cutoff Current DC Pulse Current Gain (Note 5) 40 35 20 20 MIN 7.0 120 10 15 10 120 MAX UNITS V V nA p,A nA TEST CONDITIONS Ic = 0, IE = 100 p,A Ic = 100 p,A, IE = 0 VCB = 90 V, IE = 0 VCB = 90 V, IE = 0, TA = 150C VEB = 5.0 V, Ic = 0 Ic = 150 mA, VCE = 10 V Ic = 10 mA, VCE = 10 V Ic = 10 mA, VCE= 10V, TA=-55C Ic = 0.1 mA, VCE = 10 V
hFE
DC Current Gain
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperalure of 200C and junction-to-case thermal resistance of 58.3C/W (derating faclor of 17.2 mW;o C); junction-to-ambient thermal resistance of 219 C/W (derating factor of 4.56 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length 0 300 !loS; duty cycle 0 1%. 6. For product family characteristic curves. refer to Curve Set T149.
3-234
2N1893

VCEO{SUSI
MIN 80
MAX
UNITS I V Ie Ie Ie
TEST CONDITIONS
Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Collector to Emitter Sustaining Voltage (Notes 4 & 5) Output Capacitance Input Capacitance High Frequency Current Gain Small Signal Current Gain Input Resistance Output Conductance Voltage Feedback Ratio
= 30 rnA
(pulsed). Ie
=0
VeEcsat) VeEcsat) VeERcsus> COb Cib hIe hIe hib hob hrb
1.2 5.0 0.9 1.3 100 15
V
V V V V pF pF
= 50 rnA, Ie = 5.0 rnA = 150 rnA, Ie = 15 rnA Ie = 50 rnA, Ie = 5.0 rnA Ie = 150 rnA, Ie = 15 rnA Ie = 100 rnA (pulsed), (ReE ";;
Vee
100)
i
2.5
85 100 30 8.0 0.5 0.5 1.25 1.50
I 30
. 45 20 4.0 0 0 JLmho JLmho x10- 4 x10- 4
= 10 V, IE = 0 VEB = 0.5 V, IE = 0 Ie = 50 rnA, VeE = 10 V, f = 20 MHz Ie = 1.0 rnA, VeE = 5.0 V, f = 1.0 kHz Ie = 5.0 rnA, VeE = 10V, f = 1.0 kHz Ie = 1.0 rnA, Vee = 5.0 V, f = 1.0 kHz Ie = 5.0 rnA, Vee = 10V, f = 1.0 kHz Ie = 1.0 rnA, VeE = 5.0 V, f = 1.0 kHz Ie = 5.0 rnA, VeE = 10 V, f = 1.0 kHz Ie = 1.0 rnA, Vee = 5.0 V, f = 1.0 kHz Ie = 5.0 rnA, Vee = 10 V, f = 1.0 kHz
3-235
FAIRCHILD
2N/PN/FTS02218 2N/PN/FTS02221
VCEO ... 30 V (Min)
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current 2N PN/FTSO -65 C to 200 C -55 C to 1500 C 175C 150C
PACKAGE 2N2218 2N2221 PN2218 PN2221 FTS02218 FTS02221
2N2218 0.8mW 3.0W PN2218 0.625 W 1.0 W
2N2221 0.5W 1.8 W FTSO 0.350 W*
30V 60 V 5.0 V 800 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) BVcBo BVEBo lEBo ICBO SYMBOL CHARACTERISTIC Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current MIN 60 5.0 10 10 10 MAX UNITS V V nA nA J.LA TEST CONDITIONS
= 10 J.LA, IE = 0 IE = 10 J.LA, Ic = 0 VEB = 3.0 V, Ic = 0 VCB = 50 V, IE = 01 VCB = 50 V, IE = 0, TA = 150C

Ie
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 175' C; function-to-case thermal resistance of SO' C/W (derating factor of 20 mW/' C), and junction-ta-ambient thermal resistance of 188' C/W (derating factor of 5.33 wW/' C) for 2N2218; for 2N2221, junction-to-case thermal resistance of 83.5' C/W (derating factor of 12 mWI' C); junction-to-ambient thermal resistance of 300' C/W (derating factor of 3.33 mW/' C). These ratings give a
maximum junction temperature of 1500
C,junction~to-case
thermal resistance of 1250 elW (derating factor of 8.0 mWfO C); junction-ta-ambient thermal
4. 5. 6.
resistance of 200' C/W (derating factor of 5.0 mWI' C) for PN2218 and PN2221; (TO-236) junction-la-ambient thermal resistance of 35TC/w (derating factor of 2.8 mWI' C). Rating refers to a high current pOint where coilector to emitter voltage is lowest Pulse conditions: length = 300 I'S; duty cycle";; 2%. For product family characteristic curves, refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-236
2N/PN/FTS02218 2N/PN/FTS02221

SYMBOL CHARACTERISTIC DC Current Gain (Note 5) MIN 40 20 35 25 20 20 30 0.4 1.6 1.3 2.6 8.0 2.5 60 MAX 120 UNITS Ic Ic Ic Ic Ic Ic V V V V V pF = = = = = = TEST CONDITIONS 150 rnA, VCE = 10V 150 rnA, VCE = 1.0 V 10 rnA, VCE = 10 V 1.0 rnA, VCE = 10 V 0.1 rnA, VCE = 10 V 500 rnA, VCE = 10 V
hFE
VCEO(sus. VCE(sat. V8E",at.
Collector to Emitter Sustaining Voltage (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance High Frequency Current Gain Real Part of Common Emitter High Frequency Input Impedance
Ic = 10 rnA (pulsed), 18 = 0 Ic = 150 rnA, 18 = 50 rnA Ic = 500 rnA, 18 = 50 rnA Ic = 150 rnA, 18 = 15 rnA Ic = 500 rnA, 18 = 50 rnA VCB =10V,IE =0 Ic =20 mA, VCE = 20V, f = 100 MHz Ic = 20 mA, VCE = 20 V, f = 300 MHz
Cob
h'e
Re(~e)
3-237
FAIRCHILD
2N/PN/FTS02218A 2N/PN/FTS02221A
hFE
VCEO ... 40 V (Min) @ 10 mA 40-120@ 150 mA ton . 35 ns (Max) @ 150 mA, toff 285 ns (Max)@150mA Complements ... 2N1PN/FTS02904A Series
ABSOLUTE MAXIMUM RATINGS (Note 1) 2N PN/FTSO Temperatures -65 C to 200 C -55 C to 150 C Storage Temperature 175C 150C Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature (Note 7) 25 C case Temperature
PACKAGE 2N2218A 2N2221A PN2218A PN2221A FTS02218A FTS02221A
TO-39 TO-18 TO-92 TO-92
TO-236MI AB
TO-236AAIAB
2218A 0.8W 3.0W PN 0.625 W 1.0W
2221A 0.5W 1.8W FTSO 0.350 W'
Total Dissipation at 25 C Ambient Temperature 25 C case Temperature

Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VESO Emitter to Base Voltage Collector Current Ic
40V 75 V 6.0V 800mA
BVcEo BVEBO
SYMBOL CHARACTERISTIC MIN Collector to Emitter Breakdown Voltage 40 (Note 5) Emitter to Base Breakdown Voltage Collector to Base Breakdown Voltage 6.0 75 BVcso
MAX
UNITS V V V Ic Ic Ic
TEST CONDITIONS
= 10 mA,
Is
=0
= 0, IE = 10 !J.A = 10 ~, Ic = 0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 175' C.junction-to-casethermal resistance of 50' CIW (derating factor of 20 mW/' Cand junctionto-ambient thermal resistance of 188'CIW (derating factor of 5.33 mW/'C) for 2N2218A. For the 2N2221A. junction-to-case thermal resistance of 83.5' C/W (derating factor of 12 mW/' C). junction-to-ambient thermal resistance of 300' C1W (derating factor of 3.33 mW/' C). These ratings give a maximum junction temperature of 150' C. junction-to-case thermal resistance of 125' C1W (derating factor of 8.0 mW/' C): and junction-to-ambient thermal resistance of 200' CIW (derating factor of 5.0 mWI' C) forPN2218Aand PN2221A. For FTS02218Aand FTS02221Ajunction-to-ambientthermal resistance of 357' CIW (derating factor of 2.8 mWI' C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length =300 1'8: duty cycle = 1%. 6. For product family characteristic curves. refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-238

SYMBOL CHARACTERISTIC Collector Reverse Current ICEX ICBO lEBO IBL hFE Collector Reverse Current Emitter to Base Cutoff Current Base Current DC Current Gain (Note (Note (Note (Note (Note VCElsatl VBElsatl COb Cib h'e h'e hie hoe h,e RE (hie) td t, to tl TA rb'C c 5) 5) 5) 5) 5) 20 25 35 40 25 15 20 MIN MAX 10 10 10 10 20 UNITS nA nA TEST CONDITIONS VCE = 60 V, VEB = 3.0 V VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150C VEB = 3.0 V, Ic = 0 VEB = 3.0 V, VCE = 60 V Ic = Ic = Ic = Ic = Ic = Ic = Ic = V V V V pF pF 100 pA, VCE = 10 V 1.0 rnA, VCE = 10 V 10 rnA, VCE = 10 V 150 rnA, VCE = 10 V 500 rnA, VCE = 10 V 10 rnA, VCE = 10 V, TA = -55C 150 rnA, VCE = 1.0 V
pA
nA nA
120
Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance Input Capacitance High Frequency Current Gain Small Signal Current Gain Input Resistance Output Conductance Voltage Feedback Ratio Real Part of Common Emitter High Frequency Input Impedance Turn On Delay Time (test circuit no. 231) Rise Time (test circuit no. 231) Storage Time (test circuit no. 232) Fall Time (test circuit no. 232) Active Region Time Constant Collector to Base Time Constant 60 2.5 30 0.6
0.3 1.0 1.2 2.0 8.0 25 150 300 3.5 1.0 15 100 500 250
Ic = 150 rnA, IB = 15 rnA Ic = 500 rnA, IB = 50 rnA Ic = 150 rnA, IB = 15 rnA Ic = 500 rnA, IB = 50 rnA VCB = 10 V, IE = 0, f = 100 kHz VEB = 0.5 V, Ic = 0, f = 100kHz Ic = 20 rnA, VCE = 5.0 V, f = 100 MHz Ic = 1.0 rnA, VCB = 10V, f = 1.0 kHz Ic = 10 rnA, VCB = 10 V, f = 1.0 kHz
50
1.0 0.2 3.0 10
kn kn /lmho /lmho x1o-6 x10-6 n
Ic = 1.0 rnA, VCB = 10 V, f = 1.0 kHz Ic = 10 rnA, VCB = 10 V, f = 1.0 kHz Ic = 1.0 rnA, VCE = 10 V, f = 1.0 kHz Ic = 10 rnA, VVB = 10 V, f = 1.0 kHz Ic = 1.0 rnA, VCB = 10 V,f = 1.0 kHz Ic = 10 rnA, VCB = 10 V, f = 1.0 kHz Ic = 20 rnA, VCE = 20 V f = 300 MHz Ics= 150mA, Vee=30V, IB1 =15mA Ics =150 rnA, Vee =30V, IB1 =15mA Ic = 150 rnA, Vcc = 30 V, IB1 = IB2 = 15 rnA Ics = 150 rnA, Vcc = 30 V, IB1 = IB2 = 15 rnA Ic = 150 rnA, VCE
10 25 225
ns ns ns ns ns ps
60
2.5 150
= 30 V
Ic = 20 rnA, VCE = 20V, f =31.8 MHz
3-239
FAIRCHILD
2N2219/PN2219/FTS02219 2N22221PN22221FTS02222
VCEO ... 30 V (Min) hFE ... 100-300 @ 150 mA, 30 (Min) @ 500 mA
ABSOLUTE MAXIMUM RATINGS (Note 1) PN/FTSO 2N Temperatures -65" C to 200" C-55 C to 150" C Storage Temperature 175C 15O"C Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25" C Ambient Temperature 25 C Case Temperature Total Dissipation at 25" C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Collector Current Ic
PACKAGE 2N2219 2N2222 PN2219 PN2222 FTS02219 FTS02222
TO-39 TO-1B TO-92 TO-92 TO-236AA/ AB TO-236AA/ AB
2N2219 O.BmW 3.0W PN2219 0.625 W 1.0 W
2N2222 0.5W 1.B W FTSO 0.350 W
30V 60V 5.0V BOO rnA
ELECTRICAL CHARACTERISTICS (25" C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVCBO Collector to Base Breakdown Voltage BVEBO lEBO ICBO Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current MIN MAX
60
5.0 10 10 10
UNITS V V nA nA pA
TEST CONDITIONS
= 10 pA, IE = 0 IE = 10 /-lA, Ic = 0 VEB = 3.0 V, Ic = 0 Vca = 50 V, IE = 0 VCB = 50 V, IE = 0, TA = 150"C

Ic
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1750 C; function-to-case thermal resistance of f:Af'.CIW (derating factor of 20 mWI" C). and junction-to-ambient thermal resistance of 188" CIW (derating factor of 5.33 wW/o C) for 2N2219; for 2N2222. junction-to-case thermal resistance of 83.50 ClW (derating factor of 12 mW/o C); junction-to-ambient thermal resistance of 300" CIW (derating factor of 3.33 mW/o C). These ratings give a maximum junction temperature of 150" C. iunction-to-case thermal resistance of 1250 CIW (derating factor of 8.0 mWI" C); junction-to-ambient thermal resistance of 200" CIW (derating factor of 5.0 mWI" C) for PN2219and PN2222; (TO-236) junction-to-ambient thermal resistance of 357" CIW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I; duty cycle"; 2%. 6. For product family characteristic curves. refer to Curve Set T145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-240
2N2219/PN2219/FTS02219 2N22221PN22221FTS02222
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC DC Current Gain (Note 5) hFE
MIN
100 50 75 50 35 30 30
MAX 300
UNITS
TEST CONDITIONS Ic = 150 rnA, VCE = 10 V Ie = 150 rnA, VCE = 1.0 V Ie = 10 rnA, VeE = 10 V le=0.1 rnA, VCE=10V Ie = 0.1 rnA, VeE = 10 V Ic = 500 rnA, VCE = 10 V Ie = 10 rnA (pulsed), IB = 0 Ic = 150 rnA, IB = 50 rnA Ie = 500 rnA, IB = 50 rnA Ie = 150 rnA, IB = 15 rnA Ie = 500 rnA, IB = 50 rnA VeB = 10 V, IE = 0 Ic = 20 rnA, VeE = 20 V, f = 100 MHz Ie =20 rnA, VCE = 20V, f = 300 MHz
VCEO(susJ
Collector to Emitter Sustaining Voltage (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance High Frequency Current Gain Real Part of Common Emitter High Frequency Input Impedance
V 0.4 1.6 1.3 2.6 V V V V pF
VeElsati VBElsal)
Cob
hIe Re(hie)
B.O
2.5 60
3-241
FAIRCHILD
2N/PN/FTSO/2219A 2N/PN/FTS02222A
PACKAGE 2N2219A 2N2222A PN2219A PN2222A FTS02219A FTS02222A
VeEo ... 40 V (Min) @ 10 mA hFE ... 100-300 (2N/PN/FTS02219A, 2N/PN/FTS02222A) @150mA Ion... 35 ns (Max) @ 150 mA, toll ... 285 ns (Max) @ 150 mA Complements ... 2N/PN/FTS02904A Series
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures PN/FTSO 2N Storage Temperature -65 C to 200 C -55 C to 150 C Operating Junction Temperature 175C 150 C Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature (Note 7) 25 C Case Temperature
TO-39 TO-39 TO-92 TO-92 TO-236AAIAB TO-236AAI AB
2N2219A O.SW 3.0W

PN 0.625 W 1.0W
2N2222A 0.5W 1.SW FTSO 0.350 W'
25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) Veeo Collector to Base Voltage VEeo Emitter to Base Voltage Ie Collector Current
40 V 75V 6.0V SOOmA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) BVeEo SYMBOL CHARACTERISTIC MIN Collector to Emitter Breakdown Voltage 40 (Note 5) Emitter to Base Breakdown Voltage Collector to Base Breakdown Voltage Collector Reverse Current 6.0 75
.~
MAX
UNITSl V lie V lie
= 10 mA,
TEST CONDITIONS Ie = 0
BVEBO BVeeo leEx
.. -
-10
inA
= D, IE = 10 ~ = 10~, Ie = 0 IVeE = 60 V, VEe = 3.0 V

I Ie
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 175' C, junctionto-case thermal resistance of 50' CIW (derating factor of 20 mW/' C), and junction-to-ambient thermal resistance of 188' ClW (derating factor of 5.33 mW/' C) for 2219A. For the 2N2222A, junction-to-case thermal resistance of 83.5' ClW (derating factor of 12 mW/' C), junction-to-ambient thermal resistance of 300' ClW (derating factor of 3.33 mW/' C). These ratings give a maximum junction temperature of 150' C, junction-to-case thermal resistance of 125' CIW (derating factor of 8.0 mW/' C); junction-to-ambient thermal resistance of 200' CIW (derating factor of 5.0 mW/' C) for PN2219A, PN2222A. For the FTS02219A/2222A, these ratings give a maximum junction-toambient thermal resistance of 357'CIW (derating factor of 2.8 mWI'C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 jlS; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set TI45. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-242
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Collector Reverse Current ICBo lEBO IBL hFE Emitter to Base Cutoff Current Base Current DC Current Gain (Note (Note (Note (Note (Note VCEIsatl VBEIsatl Cob Cib hIe hIe hie hoe hre Re (hie' td tr ts tl TA rb'C C NF 5) 5) 5) 5) 5) 35 50 75 100 40 35 50 MIN MAX 10 10 10 20 UNITS nA pA nA nA TEST CONDITIONS VCB = 60 V, IE = 0 VCB = 60 V, IE = 0, TA = 150C VEB = 3.0 V, Ic = 0 VEB = 3.0 V, VCE = 60 V Ic = 100 IJ.A, VCE = 10 V Ic = 1.0 mA, VCE = 10 V Ic=10mA,VcE=10V Ic = 150 mA, VCE = 10 V Ic = 500 mA, VCE = 10 V Ic = 10 mA, VCE = 10V, TA =-55C Ic = 150 mA, VCE = 1.0 V V V V V pF pF Ic = 150 mA, IB = 15 mA Ic = 500 mA, IB = 50 mA Ic = 150 mA, IB = 15 mA Ic = 500 mA, IB = 50 mA VcB =10V,IE=O,f=100kHz VEB = 0.5 V, Ic = 0, f = 100 kHz Ic = 20 mA, VCE = 5.0 V, f = 100 MHz 300 375 8.0 1.25 35 200 800 400 60 10 25 225 60 2.5 150 4.0 kn kn IJ.mho IJ.mho x1o- 6 x10-6 n ns ns ns ns ns ps dB Ic = 1.0 mA, VCB = 10 V, f = 1.0 kHz Ic = 10 mA, VCB = 10 V, f = 1.0 kHz Ic = 1.0 mA, VCB = 10V, f = 1.0 kHz Ic = 10 mA, Vcs = 10 V, f = 1.0 kHz Ic = 1.0 mA, VCE = 10 V, f = 1.0 kHz Ic = 10 mA, VCE = 10 V, f = 1.0 kHz Ic = 1.0 mA, Vcs = 10V, f= 1.0 kHz Ic = 10 mA, VCB = 10 V, f = 1.0 kHz Ic = 20 mA, Vce = 20 V f = 300 MHz Ics = 150 mA, Vcc =30V, lSI = 15mA Ics=150mA, Vcc=30V,IBl =15mA Ics = 150 mA, Vcc = 30 V, lSI = IS2 = 15 mA Ics = 150 mA, Vcc = 30 V, lSI = IS2 = 15 mA Ic = 150 mA, VCE = 30 V Ic = 20 mA, VCE = 20V, f =31.8 MHz Ic = 100 pA, VCE = 10V, RG = 1.0 kn, BW = 1.0 Hz, f = 1.0 kHz
300
Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance Input Capacitance High Frequency Current Gain Small Signal Current Gain Input Resistance Output Conductance Voltage Feedback Ratio Real Part of Common Emitter Frequency Input Impedance Turn On Delay Time (test circuit no. 231 Rise Time (test circuit no. 231) Storage Time (test circuit no. 232) Fall Time (test circuit no. 232) Active Region Time Constant Collector to Base Time Constant Noise Figure 3.0 50 75 2.0 0.25 5.0 25 0.6
0.3 1.0 1.2 2.0 8.0 25
3-243
FAIRCHILD
2N2270
NPN Low Noise Medium Power Transistor

Temperatures Storage Temperature -65 C to 2000 C Operating Junction Temperature -65 C to 2000 C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VeBo Collector to Base Voltage (with Emitter Open) VeER Collector to Base Voltage (RBE :;;;10 !l) VEBO Emitter to Base Voltage Ic Collector Current
PACKAGE 2N2270
TO-39
1.0 W 5.0W
45 V 60V 60V 7.0 V 1A

SYMBOL CHARACTERISTIC BVcBo BVEBo LVeEo LVeER lEBO leBo hFE Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector to Emitter Sustaining Voltage (Note 1) Collector to Emitter Sustaining Voltage Emitter Cutoff Current Collector Cutoff Current (150C) DC Pulse Current Gain (Note 2) 5 30 MIN 60 7 45 60 100 50 50 200 MAX UNITS V V V V nA nA JJ.A Ie IE Ie Ie TEST CONDITIONS
= 0.05
JJ.A, IE
=0
= 100 JJ.A, Ie = 0 = 100 mA, IB = 0
(pulsed)
= 100 mA, RBE = 10 !l (pulsed) = 5.0 V, Ie = 0 VeB = 60 V, IE = 0 VeB = 60 V, IE = 0, TA = 1500C Ie = 150 mA, VeE = 10 V Ie = 1.0 mA, VeE = 10 V
VEB
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. Pulse conditions: length = 300 1'5; duty cycle = 1.8%. 3. These ratings give a maximum junction temperature of 1500 C and junction-to-case thermal resistance of 1250 C/W (derating factor of 8.0 mW;o C); junction-to-ambient thermal resistance of 200" C/W (derating factor of 5.0 mW;o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. For product family characteristic curves. refer to Curve Set T145.
3-244
2N2270
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 5) SYMBOL CHARACTERISTIC MIN Collector to Emitter Saturation Voltage VeEls.tl VaEIs.tl
Cob
MAX
Base to Emitter Saturation Voltage Output Capacitance Input Capacitance Small Signal Current Gain Current Gain Bandwidth Product Broad Band Noise Figure
0.9 1.2 15 80 275 100 30 10
UNITS V V pF pF
TEST CONDITIONS
Cib h,.
50 5
h
NF
MHz ns dB
= 150 rnA, la = 15 rnA Ie = 150 rnA, la = 15 rnA Vea = 10 V, IE = 0 VEa = 0.5 V, Ie = 0 Ie = 5.0 rnA, VeE = 10 V, f = 1.0 kc Ie = 50 rnA, VeE = 10 V, f = 20 mc Ie = 50 rnA, VeE = 10 V
Ie Ie = 300 p.A, VeE = 10 V, f = 1.0 kHz, Rs = 1000 n, BW = 15 kHz
t.!+t+t.+t, Switching Time
3-245
- - _ .._ . _ - - - _ .
FAIRCHILD,
2N/PN/MPS/FTS02369 2N/PN/MPS/FTS02369A 2N/FTS05769

NPN High Speed Saturated Switches
PACKAGE 2N2369 2N2369A 2N5769 PN2369 PN2369A MPS2369 MPS2369A FTS02369 FTS02369A FTS05769
VCEO ... 15 V (Min)
Is ... 13 ns (Max) @ 10 mA Ion ... 12 ns (Max) @ 10 mA, 10" ... 18 ns (Max) @ 10 mA

Complements ... 2N4209 (T018), 2N5771 (T092) ABSOLUTE MAXIMUM RATINGS (Note 1) MPS/PN2369/ A FTS02369/69A 2N2369/69A 2N/FTS05769 -65 C to 200" C -55" C to 150" C 200 C 150" C 2N5769 PN/MPS 0.625 W 0.260 W 1.0 W
Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 100" C Case Temperature 25C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VCES Collector to Emitter Voltage VEBO Emitter to Base Voltage Ic Collector Current (Pulse = 10 /Ls)
TO-18 TO-18 TO-92 TO-92 TO-92 TO-92 TO-92 TO-236AAI AB TO-236AAI AB TO-236AAI AB
2N2369/A 0.36W 0.68W 1.2 W
FTSO 0.350 W'
15 V 40V 40V 4.5 V 200 mA 500 mA

2369 MIN MAX 40 40 4.5 2369A 5769 MIN MAX 40 40 4.5
SYMBOL CHARACTERISTIC BVCES BVcBO BVEBO Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage
UNITS V V V Ic Ic IE
TEST CONDITIONS
= 10 /LA, VBE = 0 = 10 /LA, VBE = 0 = 10 /LA,

Ic
=0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200" C and junction-to-case thermal resistance of 146' CIW (derating factor of 6.85 mW/' C); junction-to-ambient thermal resistance of 486' C1W (derating factor of 2.06 mW/' C) for 2N2369, 2N2369A, PN2369 and PN2369A. These ratings give a maximum junction temperature of 150" C and junction-to-case thermal resistance of 125' CIW (derating factor of 8.0 mW/' C); junction-to-ambient thermal resistance of 200"C/W (derating factor of 5.0 mW/' C) for MPS2369 and 2N5769; (T0-236) junction-to-ambient thermal resistance of 357' C1W (derating factor of 2.8 mW/' C). 4. Rating refers to a high current paint where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 "s; duty cycle';; 2%. 6. For product family characteristic curves, refer to Curve Set T132. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-246

2369 MIN MAX 400 30 40 20 120 40 30 20 20 20 VCEO(SUS) VCE(satl Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage (Note 5) 15 0.25 0.2 0.25 0.5 0.3 0.70 0.85 4.0 5.0 13 12 18 5.0 13 12 18 ns ns ns 0.70 0.85 4.0 15 V V V V V V V pF 120 2369A 5769 MIN MAX 400 30
SYMBOL CHARACTERISTIC ICBo Collector Cutoff Current
UNITS nA /lA
TEST CONDITIONS VCB = 20 V, IE = 0 VCB = 20 V, IE = 0, TA=150C Ic =10mA,VcE=1.0V Ic = 100 mA, VCE = 2.0 V Ic = 10 mA, VCE = 0.35 V Ic = 30 mA, VCE = 0.4 V Ic = 100 mA, VCE = 1.0 V Ic = 10 mA, VCE = 1.0 V, TA=-55C Ic = 10 mA, VCE = 0.35 V, TA =-55C Ic = 10 mA (pulsed), IB = 0 Ic = 10 mA, IB = 1.0 mA Ic = 10 mA, IB = 1.0 mA Ic = 30 mA, IB = 3.0 mA Ic = 100 mA, IB = 10 mA Ic = 10 mA, IB = 10 mA, TA = 125C Ic = 10 mA, IB = 1.0 mA VCB = 5.0 V, IE = 0, f = 140 kHz Ic = 10 mA, VCE = 10 V, f= 100 MHz Ic = 10 mA, IBI = IB2 = 10 mA, Vcc = 10 V Ic = 10 mA, IBI = 3.0 mA, Vcc = 3.0 V Ic = 10 mA, IBI = 3.0 mA, IB2 = -1.5 mA, Vcc = 3.0 V
hFE
VBE(satl COb h,e Ts
Base to Emitter Saturation Voltage (Note 5) Output Capacitance High Frequency Current Gain Charge Storage Time Constant (test circuit no. 3111) Turn On Time (test circuit no. 210) Turn Off Time (test circuit no. 210)
ton
tott
SYMBOL CHARACTERISTIC BVCES BVcBo BVeBo ICBO Ices Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current
MPS2369 MIN MAX 40 40 4.5 400 30
UNITS V V V nA /lA
TEST CONDITIONS Ic = 10 /lA, VBe = 0 Ic = 10 /lA, VBe = 0

le=10~,lc=0
VCB = 20 V, Ie = 0, TA = 1500 C VCB = 20 V, IE = 0, TA = 125C
3-247

SYMBOL CHARACTERISTIC hFE DC Pulse Current Gain (Note 5) MPS2369 MIN MAX 40 20 20 15 0.25 0.70 0.85 4.0 5.0 13 12 18 ns ns ns 120 UNITS TEST CONDITIONS Ic = 10 rnA, VCE = 1.0 V Ic = 100 rnA, VCE = 2.0 V Ic = 10 rnA, VCE = 1.0 V, TA = -55C V V V pF Ic = 10 rnA (pulsed), Is = 0 Ic = 10 rnA, Is = 1.0 rnA Ic=10mA,ls=1.0mA Vcs = 5.0 V, IE = 0, f = 140 kHz Ic = 10 rnA, VCE = 10 V, f = 100 MHz Ic = 10 rnA, IS1 = IS2 = 10 rnA, Vcc = 10 V Ic = 10 rnA, IS1 = 3.0 rnA, Vcc = 3.0 V Ic = 10 rnA, IS1 = 3,0 rnA, IS2 = -1.5 rnA, Vee = 3.0 V
VCEO(sus) VCE(satl VSE(satl
Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance High Frequency Current Gain Charge Storage Time Constant (test circuit no. 3111) Turn On Time (test circuit no. 210) Turn Off Time (test circuit no. 210)
Cob
hie Ts ton
toff
3-248
I=AIRCHILD
2N2405
NPN Low Power Audio Frequency Transistor

Temperatures
PACKAGE 2N2405
TO-39
Storage Temperature -65 C to 200 C Operating Junction Temperature 175 C

Total Dissipation at 25C Ambient Temperature 25C Case Temperature

Voltages & Currents
1.0 W
5.OW
Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
VCEO
90V 140 V 7.0 V 1.0A
BVCER
SYMBOL CHARACTERISTIC Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current Collector to Emitter Sustain Voltage DC Pulse Current Gain (Note 5) DC Current Gain (Note 5)
MIN 140 120 7.0
MAX
UNITS V V V
TEST CONDITIONS Ic = 100 rnA, RBE = 10 n Ic=100p.A,IE=0 IE = 100 p.A, Ic = 0 VEB = 5.0 V VCB = 90 V VCB = 90 V, IE = 0, TA = 1500C Ic =30 rnA Ic = 100 rnA Ic = 150 rnA, VCE = 10 V Ic = 10 rnA, VCE = 10 V
BVCBO BVEBO lEBO ICBO LVCEO hFE hFE
10 10 10 90 90 60 35 200
nA nA
p.A
V V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 175C and junction-to-case thermal resistance of &JoC/W (derating factor of 3.33 mW/o C); junction-to-ambient thermal resistance of 150 CIW (derating factor of 6.6 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = &JO 1"'; duty cycle = 1.8%. 6. For product family characteristic curves, refer to Curve Set T149.
3-249
2N2405

SYMBOL CHARACTERISTIC VCElsatl VeElsatl Cob Cib hie hib hob hrb Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Output Capacitance Input Capacitance Current Gain Input Resistance Output Conductance Voltage Feedback Ratio 50 MIN MAX 0.5 1.1 15 80 275 8 0.5 3 UNITS V V pF pF TEST CONDITIONS Ic = 150 rnA, Ie = 15 rnA Ic = 150 rnA, Ie = 15 rnA Vce = 10 V, IE = 0, f = 1.0 MHz VEe = 0.5 V, Ic = 0 Ic = 5.0 rnA, VCE = 5.0 V, f = 1.0 kH z Ic = 5.0 rnA, VCE = 10 V, f = 1.0 kHz Ic = 5.0 rnA, Vce = 10 V, f = 1.0 kHz Ic = 5.0 rnA, Vce = 10 V, f = 1.0 kHz
n
~mhos
x10- 4
3-250
FAIRCHILD
2N2484/FTS02484 PN2484 2N3117/FTS03117

NPN Low Level Low Noise Amplifiers
PACKAGE 2N2484 2N3117 PN2484 FTS02484 FTS03117
VCEO ... 60 V (Min) hFE ... 100-500 (2N/PN/FTS02484), 250-500 (2N/FTS03117) @ 10 /lA NF ... 3.0 dB (Max) (2N/PN/FTS02484), 1.0 dB (Max) (2N/FTS03117) @ 1.0 kHz, 2.0 dB (Max) (2N/PN/FTS02484), 1.0 dB (Max) (2N/FTS03117) @ 10 kHz
TO-18 TO-18 TO-92 TO-236AA/ AB TO-236AA/ AB
ABSOLUTE MAXIMUM RATINGS (Note 1) PN/FTSO 2N2484 2N3117 Temperatures -650 C to 2000 C -550 C to 1500 C -65 0 C to 3000 C Storage Temperature 2000 C 1500 C 2000 C Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 250 C Ambient Temperature 250 C Case Temperature Total Dissipation at 250 C Ambient Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
2N 0.36 mW 1.2 W FTSO 0.350 W*
PN 0.625 W 1.0W
60 V 60 V 6.0 V 50 mA
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVcBo BVEBO ICED lEBO ICBO CHARACTERISTIC Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector to Emitter Cutoff Current Emitter Cutoff Current Collector Cutoff Current 2484 MIN MAX 60 6.0 2.0 10 10 10 10 10 10 3117 MIN MAX 60 6.0 UNITS V V nA nA nA /lA TEST CONDITIONS Ie = 10 /lA, IE = 0 IE = 10 /lA, Ic = 0 VCE = 5.0 V, IB = 0 VEB = 5.0 V, Ic = 0 VCB = 45 V, IE = 0 VcB =45V,IE=0,TA=15OOC
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200" C and junction-to-case thermal resistance of 147" CIW (derating factor of 6.85 mW/" C); junction-to-ambient thermal resistance of 485" C/W (derating factor of 2.06 mWI" C) for 2N2484 and 2N3117. These ratings give a maximum junction temperature of 150" C and (TO-92) junction-to-case thermal resistance of 125" C/W (derating factor of 8.0 mWI" C); junction-to-ambient thermal resistance of 200" C/W (derating factor of 5.0 mWI" C); (TO-236) junction-to-ambient thermal resistance of 357' CIW (derating factor of 2.8 mWI" C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I's; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set Tl07. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-251
2N2484/FTS02484 PN2484 2N3117/FTS03117

SYMBOL CHARACTERISTIC DC Current Gain (Note 5) hFE 2484 MIN MAX 800 250 200 175 100 30 20 VCEOISUSI Collector to Emitter Sustaining Voltage (Notes 4 & 5) 60 400 300 250 100 50 60 3117 MIN MAX UNITS TEST CONDITIONS Ic = 10 rnA, VCE = 5.0 V Ic = 1.0 rnA, VCE = 5.0 V Ic = 500 p.A, VCE = 5.0 V Ic = 100 p.A, VCE = 5.0 V Ic = 10 p.A, VCE = 5.0 V Ic = 1.0 JJ.A, Vee = 5.0 V Ic = 10 p.A, VCE = 5.0 V, TA = -55C V Ic = 10 rnA (pulsed), IB = 0
500
500
SYMBOL CHARACTERISTIC VCElsall VBEIONI Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage Output Capacitance Input Capacitance High Frequency Current Gain
2484 MIN MAX 0.35 0.5 0.7 6;0 6.0 2.0 3.0 150 900 24 40
3117 MIN MAX 0.35 0.7 4.5 6.0 2.0
UNITS V V pF pF
TEST CONDITIONS Ic = 1.0 rnA, IB = 0.1 rnA Ic = 100 p.A, VCE = 5.0 V VCB =5.0V,IE =0, f = 140 kHz VBE =0.5V,lc=O,f=140kHz Ic = 0.5 rnA, VCE = 5.0 V, f =30 MHz Ic = 50 p.A, VCE = 5.0 V, f =5.0 MHz Ic = 1.0 rnA, VCE = 5.0 V, f = 1.0 kHz
Cob CAb
h,e
400 10
900 24 40 800 k!l p.mhos x1o-6 dB
hIe hoe h,e NF
Input Resistance Output Conductance Reverse Voltage Feedback Ratio Wide Band Noise Figure
3.5
Ic = 1.0 rnA, VCE = 5.0 V, f = 1.0 kHz Ic = 1.0 rnA, VCE = 5.0 V, f = 1.0 kHz Ic = 1.0 rnA, VCE = 5.0 V, f + 1.0 kHz Ic = 10 p.A, VCE = 5.0 V, Rs = 10k!l, Power Bandwidth of 15.7 kHz with 3.0 dB pts at 10 Hz and 10 kHz
BOO
3.0
3-252
2N2484/FTS02484 PN2484 2N3117/FTS03117
Electrical Characteristics (250 C Ambient Temperature unless otherwise noted) Symbol Characteristic Min.
Max.
Units
Test Conditions
NF
3.0 2.0 10 1.0 1.0 4.0 1.5
dB dB dB dB dB dB dB
Ie = 10 /LA, VeE = 5.0 V, f = 1.0 kHz, As = 10 kO Power Bandwidth of 200 Hz Ie = 10 /LA, VeE = 5.0 V, f = 10 kHz, As = 10 k0, Power Bandwidth of 2.0 kHz Ie = 10 /LA, VeE = 5.0 V, f = 100 Hz, As = 10 k Power Bandwidth of 20 Hz Ie = 5.0 /LA, VeE = 5.0 V, f = 1.0 kHz, As = 50 kO, Power Bandwidth of 200 Hz Ie = 5.0 /LA, VeE = 5.0 V, f = 10kHz, As = 50 kO, Power Bandwidth of 1.0 kHz Ie = 30 /LA, VeE = 5.0 V, f = 100 kHz, As = 10 kO, Power Bandwidth of 20 Hz Ie = 30 J.LA, VeE = 5.0 V, f= 10 Hz, As = 10 kO, Power Bandwidth of 2.0 Hz
0,1
3-253
FAIRCHIL.D
2N2586
NPN Low Level Low Noise Type

Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VeBo Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current
PACKAGE 2N2586
TO-18
-65 C to 200 C 175C
0.4 W 1.8 W
45 V 60 V 6.0 V 30 mA

SYMBOL CHARACTERISTIC BVcBo BVEeo IcEo ICES Iceo lEBO hFE hFE Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector to Emitter Cutoff Current Collector to Emitter Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Pulse Current Gain (Note 5) DC Current Gain 150 120 80 40 MIN 60 6.0 2.0 2.0 10 2.0 2.0 600 360 MAX UNITS V V nA nA p.A nA nA Ic IE TEST CONDITIONS
= 10 p.A,
IE
=0
= 10 p.A, Ic = 0 VCE = 5.0 V, Ie = 0 VCE = 45 V, VeE = 0 VCE = 45 V, VeE = 0, Vce = 45 V, IE = 0 VEe = 5.0 V, Ic = 0
Ic Ie Ic Ic Ic
TA
= HaaC
= 10 mA, VeE = 5.0 V

= 500 p.A, VCE = 5.0 V = 10 p.A, VCE = 5.0 V = 1.0 p.A, VCE = 5.0 V = 10 p.A, VCE = 5.0 V, TA = 55C
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature 01 1750 C and junction-ta-case thermal resistance of 2500 C/W (derating factor of 4.0 mW/ o C); junction-to-ambient thermal resistance of SOOo C/W (derating factor of 2.0 mW/ o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 JLS; duty cycle';; 2%. 6. For product family characteristic curves, refer to Curve Set T107.
3-254
2N2586

SYMBOL CHARACTERISTIC VCEOISUSI VCElsatl VBE Cabo h,e h,e hie hoe NF Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage Base to Emitter Voltage Common Base Open Circuit Output Capacitance High Frequency Current Gain Small Signal Current Gain Input Resistance Output Admittance Spot Noise Figure 1.5 150 4.5 600 18 100 2.0 2.0 3.0 3.5 kO J.'mhos dB dB dB dB 0.7 MIN 45 0.5 0.9 7.0 MAX UNITS V V V pF TEST CONDITIONS Ic=10mA,IB=0 Ic = 10 mA, IB = 0.5 mA Ic = 10 mA, IB = 0.5 mA VCB = 5.0 V, IE = 0, f = 1.0 MHz Ic = 500 pA, VCE = 5.0 V, f = 30 MHz Ic = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz Ic = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz Ic = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz Ic = 1.0 pA, VCE = 5.0 V, RG = 1.0 MO, f = 10kHz Ic = 10 pA, VCE = 5.0 V, RG = 10 kO, f = 10kHz Ic = 10 J.'A, VCE = 5.0 V, RG = 10 kO, f = 1.0 kHz Ic = 1.0 pA, VCE = 5.0 V, RG = 1 MO, f = 1.0 kHz
3-255
FAIRCHILD
2N2710/FTS02710
NPN Small Signal High Speed Low Power Saturating Switch Transistor
Temperatures Storage Temperature -65 C to 200 C Operating Junction Temperature 200C Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Ambient Temperature 25 C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VerES Collector to Emitter Voltage VeBo Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
PACKAGE 2N2710 FTS02710
TO-1B TO-236AAIAB
2N 0.5W 1.2 W
FTSO 0.350 W'
20V 30 V 40V 5.0 V 500 mA
SYMBOL CHARACTERISTIC BVcEo Collector to Emitter Breakdown Voltage BVcEs BVcBo BVEBo lEBo leBo hFE VCElsatl VBElsatl Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current (150C) DC Current Gain (Note 5) Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage
MIN 20 30 40 5.0
MAX
UNITS V V V V
TEST CONDITIONS Ic = 10 mA, Ie = 0 Ic = 10 Ie = 10

~, ~,
IB = 0 IE = 0
IE= 1O IlA,le=0 VEB = 3.0 V, Ic = 0 VeB = 20 V, IE = 0 VCB = 20 V, TA = 150C Ic = 10 mA, Vee = 1.0 V Ic = 50 mA, VCE = 1.0 V
1.0 30 30 40 40 0.25 0.40 0.90 1.30
nA
~
V V V V
Ic = 10 mA, IB = 1.0 mA Ic = 50 mA, IB = 5.0 mA Ic=10mA,le=1.0mA Ic = 50 mA, IB = 5.0 mA
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200" C and junction-to-case thermal resistance of 146" C/W (derating factor of 6.8 mW/"C); junction-to-ambient thermal resistance of 350"CIW (derating factor 2.8 mW/" C); (TO-236) junction-to-ambient thermal resistance of 357"CIW (derating factor of 2.8 mW/" C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions; length';;; 300 JIS; duty cycle';;; 2%, and';;; 1.2 ms pulse duration. 6. For product family characteristic curves, refer to Curve Set T162. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-256
2N2710/FTS02710
SYMBOL CHARACTERISTIC Output Capacitance Cob h'e r. ton toll High Frequency Current Gain Charge Storage Time Constant (test circuit no. 3111) Turn On Time Turn Off Time
MIN 5.0
MAX 4.0 15 20 35
UNITS pF ns ns ns
TEST CONDITIONS VCB = 10 V, IE = 0, f = 4.0 MHz Ic= 10 rnA, VCE=20V, f = 100 MHz Ic = 10 rnA, IB1 = IB2 = 10 rnA Ic = 10 rnA, IB1 = 3.0 rnA Ic = 10 rnA, IB1 = 3.0 rnA 182 = 1.0 rnA
3-257
FAIRCHILD
2N2904/S/6/7 PN2904/S/6/7 FTS02904/S/6/7

PACKAGE 2N2904 2N2905 2N2906 2N2907 PN2904 PN2905 PN2906 PN2907 FTS02904 FTS02905 FTS02906 FTS02907

TO-39 TO-39 TO-18 TO-18 TO-92 TO-92 TO-92 TO-92
VCEO ... -40 V (Min) hFE ... 40-120 (2N/PN/FTS02904/S), 100-300 (2N/PN/FTS02905/7) ton 45 ns (Max) @ 150 rnA, toff 100 ns (Max) @150mA Complements ... 2N/PN/FTS02218 Series, 2N/PN/FTS02218A Series
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures 2N PN/FTSO Storage Temperature -650 C to 2000 C -55 0 C to 1500 C Operating Junction Temperature 175C 1500 C Power Dissipation (Notes 2 & 3) Total Dissipation at 2N2904/5 2N290S/7 25 C Ambient Temperature 0.6 W 0.4 W 25 0 C Case Temperature 3.0W 1.8W

Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
PN 0.625 W 1.0W
FTSO 0.350 W'
2N/PN2904 -40 V
--60 V --5.0 V
600 mA
SYMBOL CHARACTERISTIC DC Current Gain (Note 5) hFE
2N/PN2904/6 MIN MAX 40 120 20 35 25 20
TEST CONDITIONS Ic = 150 mA, VCE = -10 V Ic = 500 mA, VCE = -10 V Ic = 10 mA, VCE = -10 V Ic = 1.0 mA, VCE = -10 V Ic=0.1 mA,VcE=-10V
NOTES: 1. These ratings are limiting values above which the serviceability 01 any individual semiconductor device may be impaired. 2. These are steady state limits. The lactory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature 01 2000 C and junction-to-case thermal resistance 01 58.30 CIW (derating lactor 01 17.2 mW/ o C); junction-to-ambient thermal resistance 01 2920 ClW (derating lactor 01 3.42 mW/o C) lor 2N2904 and 2N2905; junction-to-case thermal resistance 01 97.30 C/W (derating lactor 01 10.3 mW/o C); junction-to-ambient thermal resistance 01 4370 CIW (derating lactor 01 2.28 mW/ o C) lor the 2N2906 and 2N2907. These ratings give a maximum junction resistance 011500 Cand junction-to-casethermal resistance 01 1250 CIW (derating lactorol 8.0mW/ 0 C); junction-to-ambient thermal resistance 01 2000 ClW (derating lactor 01 5.0 mW/ o C) lor PN2904. PN2905, PN2906, and PN2907; (T0236) junction-toambient thermal resistance of 357" CIW (derating factor 01 2.8 mW/o C). 4. Rating relers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 !; duty cycle = 1%. 6. For product lamily characteristic curves, reler to Curve Set T212. Package mounted on 99.5% alumina 8mm x 8mm x 0.6mm.
3-258
2N2904/S/6/7
PN2904/S/6/7
FTS02904/S/6/7

SYMBOL hFE CHARACTERISTIC DC Current Gain (Note 5) 2N/PN290517 MIN MAX 100 30 75 50 35 MIN --5.0 --60 50 20 20 50 --60 -0.4 -1.6 -1.3 -2.6 8.0 30 2.0 10 40 80 30 ns ns ns ns 300 Ic Ic Ic Ic Ic UNITS V V nA nA !J.A nA V V V V V pF pF
= = = = =
TEST CONDITIONS 150 rnA, VCE = -10 V 500 rnA, VCE = -10 V 10 rnA, VCE = -10 V 1.0 rnA, VCE = -10 V 0.1 rnA, VCE = -10 V TEST CONDITIONS Ic = 0, IE = 10 !J.A Ic = 10 !J.A, IE = 0 VCE = -30 V, VE8 = --0.5 V VC8 = -50 V, IE = 0 VC8 = --50V,IE=O, TA=150C VCE = -30 V, VE8 = --0.5 V Ic = 10 rnA (pulsed), 18 = 0 Ic=150mA,18=15mA Ic = 500 rnA, 18 = 50 rnA Ic=150mA,18=15mA Ic = 500 rnA, 18 = 50 rnA VC8 = -10 V, IE = 0, f = 100 kHz VE 8 = -2.0 V, Ic = 0, f = 100 kHz Ic = 50 rnA, VCE = -20 V, f = 100 MHz Ic= 150 rnA, Vcc =-30V,181 =15mA Ic = 150 rnA, Vcc = -30 V, 181 = 182 = 15 rnA Ic = 150 rnA, Vcc = --6.0 V, 181 = 15 rnA Ic = 150 rnA, Vcc = --6.0 V, 181 = 182 = 15 rnA
SYMBOL BVE80 BVc80 ICEX IC80 18 VCEO(sus) VCE(Satl V8EIsatl COb Cib hie td t, ts tl
CHARACTERISTIC Emitter to Base Breakdown Voltage Collector to Base Breakdown Voltage Collector Reverse Current Collector Cutoff Current Base Current Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance Emitter Transition Capacitance High Frequency Current Gain Turn On Delay Time (test circuit no. 224 Rise Time (test circuit no. 224) Storage Time (test circuit no. 225) Fall Time (test circuit no. 225)
MAX
3-259
FAIRCHILD
2N2904AJ5AJ6AJ7A
PN2904AJ5AJ6AJ7A FTS02904AJ5AJ6AJ7A'
PACKAGE 2N2904A 2N2905A 2N2906A 2N2907A PN2904A PN2905A PN2906A PN2907A FTS02904A FTS02905A FTS02906A FTS02907A
PNP Small Signal General Purpose _ _ _ _ _ _ _ _ _ _ _ _ _ _ _....:...A..:.:....:..:mRlifiers & Switches

Po ... 625 mW@ TA = 25C (PN Series) VeEo ... -60 V (Min) hFE ... 40-120 (2N/PNIFTS02904A16A), 100-300 (2N/PN/FTS02905A17A) ton ... 45 ns (Max) @ 150 mA, toff ... 100 ns (Max) @ 150 mA Complements ... 2N/PN/FTS02218 Series, 2N/PN/FTS02218A Series TO-39 TO-39 TO-18 TO-18 TO-92 TO-92 TO-92 TO-92 TO-236AAIAB TO-236AAIAB TO-236AAIAB TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) 2N PN/FTSO Temperatures Storage Temperature -65 C to 200 C -55 C to 150" C Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 2N2904/5A 2N2906/7A 25 C Ambient Temperature 0.6 W 0.4W 25 C Case Temperature 3.0 W 1.8 W Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VeBO Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current PN 0.625 W 1.0 W FTSO 0.350 W'
2N/PN -40 V -60 V -5.0 V 600 rnA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC DC Current Gain (Note 5) hFE 2904A12906A MIN MAX 40 120 UNITS TEST CONDITIONS Ie = 150 rnA, VeE = -10 V Ie = 500 rnA, VeE = -10 V Ie = 10 rnA, VeE = -10V Ie = 1.0 rnA, VeE = -10 V Ie = 0.1 rnA, VeE = -10 V
40 40 40 40
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 2000 C and junction-to-case thermal resistance of 58.30 CIW (derating factor of 17.2 mW/o C); junction-to-ambient thermal resistance of 2920 ClW (derating factor of 3.42 mW/o C) for 2N2904Aand 2N2905A;junction-to-case thermal resistance of 97.30 ClW (derating factor of 10.3 mW/o C); junction-ta-ambient thermal resistance of 4370 CIW (derating factor of 2.28 mWI" C) for the 2N2906A and 2N2907A. These ratings give a maximum junction resistance of 150" C and lunction-to-case thermal resistance of 1250 CIW (derating factor of 8.0 mW/o C); junction-to-ambient thermal resistance of 200" CIW (derating factor of 5.0 mWI" C) for PN2904A, PN2905A. PN2906A, and PN2907 A; (TO-236) junction-to-ambient thermal resistance of 357" CIW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length =300 p.S; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T212. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-260
2N2904AJ5AJ6AJ7A PN2904AJ5AJ6AJ7A FTS02904AJ5AJ6AJ7A

SYMBOL CHARACTERISTIC hFE DC Current Gain (Note 5) 2905A12907A .MIN MAX 100 300 UNITS Ic Ic Ic Ic Ic TEST CONDITIONS
50
100 100 75 BVEBO BVCBO IcEX IcBO IB VCEOlsusl VCElsall Emitter to Base Breakdown Voltage Collector to Base Breakdown Voltage Collector Reverse Current Collector Cutoff Current Base Current Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance Emitter Transition Capacitance High Frequency Current Gain Turn On Delay Time (test circuit no. 224 Rise Time (test circuit no. 224) Storage Time (test circuit no. 225) Fall Time (test circuit no. 225) Turn On Time (test circuit no. 224) Turn Off Time (test circuit no. 225) 2.0 10 ns ns ns ns ns ns --40 -0.4 -1.6 VBElsal1 COb Cib h,. td t, -1.3 -2.6 8.0 30 -5.0 -60 50 10 10 50 V V nA nA p,A nA V V V V V pF pF
= 150 rnA, VCE = -10 V = 500 rnA, VCE = -10 V = 10 rnA, VCE = -10 V = 1.0 rnA, VCE = -10 V = 0.1 rnA, VCE = -10 V Ic = 0, IE = 10 ~ Ic = 10 pA, IE = 0 VCE = -30 V, VEB = -0.5 V VCB = -50 V, IE = 0 VCB = -50 V, Ie = 0, TA = 150C VCE = -0 V, VEB = -0.5 V Ie = 10 rnA (pulsed), IB = 0
Ic Ic
= 150 rnA,
IB
= 15 rnA
40
80 30 45 100
t.
t, ton toll
= 500 rnA, IB = 50 rnA Ic = 150 rnA, IB = 15 rnA Ic = 500 rnA, IB = 50 rnA Vca = -10 V, IE = 0, f = 100 kHz VEB = -2.0 V, Ie = 0, f = 100 kHz Ic = 50 rnA, VeE = -20 V, f = 100 MHz Ic = 150 rnA, Vee = -30 V, IB1 = 15 rnA Ic = 150 rnA, Vee = -30 V, IB1 = IB2 = 15 rnA Ie = 150 rnA, Vee = -6.0 V, IB1 = 15 rnA Ic = 150 rnA, Vee = -6.0 V, IB1 = IB2 = 15 rnA Ic = 150 rnA, Vee = -3.0 V, IB1 = 15 rnA Ic = 150 rnA, Vcc = -6.0 V, IB1 = IB2 = 15 rnA
3-261
I=AIRCHILD
2N3013/FTS03013 2N3014/FTS03014
NPN High Speed Saturated Logic Switches
PACKAGE 2N3013 2N3014 FTS03013 FTS03014
VCEO ... 20 V (Min) (2N/FTS03014), 15 V (Min) (2N/FTS03013) r ... 18 ns (Max) @ 10 mA ton .. 15 ns (Max) @ 300 mA (2N/FTS03013), 16 ns (Max) @ 30 mA (2N/FTS03014) tOIf 25 ns (Max) @ 300 mA (2N/FTS03013), @ 30 mA (2N/FTS03014)
TO-52 TO-52
ABSOLUTE MAXIMUM RATINGS (Note 1) 2N FTSO Temperatures -55 C to 200 C -55 C to 1sao C Storage Temperature 200C 150C Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage Vces Collector to Emitter Voltage VEBO Emitter to Base Voltage Collector Current Ic (Pulse = 10 j.ls)
2N 0.36mW 1.2 W 3013 15 V 40 V 40V 5.0V 200mA 500mA
FTSO 0.350 W'
3014 20V 40V 40V 5.0V 200 mA 500 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) 3013 SYMBOL CHARACTERISTIC MIN MAX Collector to Emitter Breakdown 40 BVCES Voltage BVcBo BVEBO ICES Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Reverse Current (Note 5) . 40 5.0 0.3 40 3014 MIN MAX 40 40 5.0 0.3 40 UNITS V V V j.lA j.lA TEST CONDITIONS Ic = 100 j.lA, VBE = 0 Ic = 100 j.lA, IE = 0 IE = 100 j.lA, Ic = 0 VCE = 20 V, VBE = 0 VCE =20V, VBE=O, TA =125C
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200" C and (TO-18) j unction-to-case thermal resistance of 1460 CIW (derating factor of 6.85 mWr C); junction-to-ambient thermal resistance of 4860 CIW (derating factor of 2.06 mWr C); (TO-236) junction-to-ambient thermal resistance of 357 0 C/W (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T162. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-262
2N30131FTS03013 2N3014/FTS03014

SYMBOL CHARACTERISTIC hFE DC Current Gain (Note 5) 3013 MIN MAX 30 25 25 15 12 VeEOISUS) VeElsatl Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage (Note 5) 15 12 20 0.18 0.18 0.35 0.25 0.75 0.95 1.2 0.8 5.0 8.0 3.5 18 18 ns V V V V V V V V V V pF pF 120 3014 MIN MAX 30 25 120 UNITS TEST CONDITIONS Ie = 30 rnA, VeE = 0.4 V 16 = 10 rnA, VeE = 0.4 V Ie = 100 rnA, VeE = 0.5 V Ie = 100 rnA, VeE = 1.0 V Ie = 300 rnA, VeE = 1.0 V Ie = 30 rnA, VeE = 0.4 V, TA = -55C Ie = 10 rnA, 18 = 0 Ie = 10 rnA, 18 = 1.0 rnA Ie = 30 rnA, 18 = 3.0 rnA Ie = 100 rnA, 18 = 10 rnA Ie = 300 rnA, 18 = 30 rnA Ie = 30 rnA, 18 = 3.0 rnA, TA = 125C Ie Ie Ie Ie
= = = =
0.18 0.28 0.5 0.25 0.75 0.95 1.2 1.7 5.0 8.0 3.5
V8EIsatl
0.7
30 rnA, 18 = 3.0 rnA 100 rnA, 18 = 10 rnA 300 rnA, 18 = 30 rnA 10 rnA, 18 = 1.0 rnA
Cob Cb
h,e
Ts
Output Capacitance Input Capacitance High Frequency Current Gain Charge Storage Time Constant (test circuit no. 3111) Turn On Time (test circuit no 233) (test circuit no. 286) Turn Off Time (test circuit no. 233) (test circuit no. 286)
Ve8 = 5.0 V, IE = 0 V8E = 0.5 V, Ie = 0 Ie = 30 rnA, VeE = 10 V, f = 100 MHz Ie"" 181 "" = 182 "" 10 rnA
ton
15 16 25 25
ns ns ns
Ie "" 300 rnA, 181 "" 30 rnA Ie "" 30 rnA, 181 "" 3.0 rnA le""300mA,181 ""-182 =3.0mA Ie"" 30 rnA, 181 "" -182 = 3.0 rnA
toll
ns
3-263
FAIRCHILD
2N3019/2N3020
VCEIsall
VCEO ... 80 V (Min) 0.5 V (Max) @ 500 mA hFE ... 100-300 @ 150 mA (2N3019). SO (Min) @ 100 J.lA & 500 mA (2N3019) Complements ... 2N4031. 2N4033
PACKAGE 2N3019 2N3020
TO-5 TO-5
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage VCB Collector to Base Voltage VEB Emitter to Base Voltage Ic Collector Current
-65 to 200" C 200C
O.SW
5.0W
SOV
140 V 7.0V 1.0 A

SYMBOL CHARACTERISTIC BVcEo BVCBO BVEBO lEBO leBO hFE Collector to Emitter Breakdown Voltage (Note 4) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain (Note 4) 50 90 100 40 50 15 3019 MIN MAX 3020 MIN MAX UNITS V V TEST CONDITIONS Ic = 30 rnA, IB = 0 Ic = 100 J.lA, IE = 0 IE = 100 J.lA, Ic = 0 VEB = 5.0 V, Ic = 0 VCB = 90 V, IE = 0 VCB = 90 V, IE =0, TA = 1500 C Ic =0.1 rnA, VCE = 10V Ic = 10 rnA, VCE = 10 V Ic = 150 mA, VCE = 10 V Ic = 150 rnA, VCE = 10 V, TA =-55C Ic = 500 rnA, VCE = 10 V Ic = 1.0 A, VCE = 10 V
SO
140 7.0 10 10 10
SO
140 7.0 10 10 10 30 40 40 100 120 120
V
nA nA
JJ.A
300
30 15
100
NOTES: 1. These ratings are limiting values abOve which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200" C and junction-to-case thermal.resistance of 350 ClW (derating factor of 28.6 mW/o C); junction-to-ambient thermal resistance of 217" C/W (derating factor of 4.6 mW/o C). 4. Pulse conditions: length" 300 lIs; duty cycle" 1%. 5. For product family characteristic curves. refer to Curve Set T149.
3-264
2N3019/2N3020

SYMBOL VCElsau VBElsaU Cob Cib h'e h,e rb'C C NF CHARACTERISTIC Collector to Emitter Saturation Voltage (Note 4) Base to Emitter Saturation Voltage (Note 4) Output Capacitance Input Capacitance Small Signal Current Gain Current Gain Bandwidth Product Collector Base Time Constant Noise Figure 80 5.0 400 4.0 3019 MIN MAX 0.2 0.5 1.1 12 60 400 30 5.0 400 ps dB 3020 MIN MAX 0.2 0.5 1.1 12 60 200 UNITS V V V pF pF TEST CONDITIONS Ic = 150 mA, IB = 15 mA Ic = 500 mA, IB = 50 mA Ie = 150 mA, IB = 15 mA VCB = 10 V, IE =0, f =1.0MHz VEB =0.5 V, Ic =0, f = 1.0 MHz Ic = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz Ic = 50 mA, VCE = 10 V, f= 20 MHz Ic = 10 mA, VCE = 10 V, f = 4.0 MHz Ic = 100 }lA, VCE = 10 V, f= 1.0 kHz, Rs = 10 k.fl
3-265
FAIRCHILD
2N3053
VCEO ... 40 V (Min) hFE... 50-250 @ 150 mA IT .. 100 MHz (Min) @ 50 mA
PACKAGE 2N3053
TO-39
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25C Case Temperature Linear Derating Factor Voltages & Currents VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current (Continuous)
-65 C to 200 C 175 C
5.0 W 28.6 mW/oC
40 V 60V 5.0 V 700 mA
SYMBOL CHARACTERISTIC BVEco BVCER BVcBo BVEBo ICEx lEBO hFE VCEIsati VBEIsati VBEION) Cob Cib hie Collector to Emitter Breakdown Voltage Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter to Base Cutoff Current DC Pulse Current Gain (Note 4) Collector to Emitter Saturation Voltage (Note 4) Base to Emitter Saturation Voltage (Note 4) Base to Emitter "On" Voltage Output Capacitance Input Capacitance Current Gain Bandwidth Product
MIN 40 50 60 5.0
MAX
UNITS V V V V Ic
TEST CONDITIONS
0.25 0.25 25 50 250 1.4 1.7 1.7 15 80 5.0
p.A
p.A
V V V pF pF
= 100 p.A, IE = 0 Ic = 100 p.A, RBE = iOn Ic = 100 p.A, IE = 0 Ic = 0, IE = 100 p.A ) = 1.5 V VCE = 30 V, VEB10FF VEB = 4.0 V, Ic = 0 Ic = 150 mA, VCE = 2.5 V Ic = 150 mA, VCE = 10 V Ic = 150 mA, IB = 1.5 mA
Ic Ic
= 150 mA,
IB
= 15 mA
= 150 mA, VeE = 2.5 V = 10 V, IE = 0, f = 140 kHz VEB = 0.5 V, Ic = 0, f = 140 kHz Ic = 50 mA, VCE = 10 V, f = 20 MHz
VCB
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200C and junction-to-case thermal resistance of 35 CIW (derating factor of 28.6 mW/o C). 4. Pulse conditions: length = 300 j.I5; duty cycle =2%. 5. For product family characteristic curves, refer to Curve Set T149.
3-266
F=AIRCHILO
2N3107/2N3108 2N3109
NPN Small Signal General Purpose Amplifiers & Saturated Switches
VeEo ... 40 V (Min) (2N3109), 60 V (Min) (2N3107/8) VeEIsatl ... 1.0 V (Max) @ 1.0 A hFE ... 100-300 @ 150 mA (2N3107/9), 40 (Min) @ 500 mA (2N3107/9, 40 (Min) @ 500 mA (2N3107/9) ton ... 200 ns (Max) @ 150 mA toft ... 600 ns (Max) (2N3108), 1.0 p.S (Max) (2N3107/9)
PACKAGE
2N3107 2N310B 2N3109 TO-39 TO-39 TO-39
@ 150 mA NF ... 7.0 dB (Max) @ 1.0 kHz

3109
40V
VeEo VeBo Vf'BO Collector to Emitter Voltage (Note 4) Collector to Base Voltage Emitter to Base Voltaqe
O.BW
5.0W
3107/8 60V
100 V 7.0 V
BO V
7.0 V

SYMBOL BVeBo CHARACTERISTIC Collector to Base Breakdown Voltage (2N3107 only) (2N310B only) (2N3109 only) Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current Collector Reverse Current
MIN
100
3107/9 MAX
3'108 MIN MAX
UNITS V V V V
TEST CONDITIONS Ie = 100 p.A, IE = 0 Ie = 100 p.A, Ie = 0 Ie = 100 p.A, Ie = 0 Ie = 100 p.A, Ie = 0 VeB = 5.0 V, Ie = 0 VCB = 60 V, IE =0, TA = 1500 C Vce = 60 V, VEe = 0
100 80 7.0 10 10 10 7.0 10 10 10
BVeBo lEBO leBo Ices
nA p.A nA
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200" C and junction-to-case thermal resistance of 35" CIW (derating factor of 28.6 mWI" C); junction-to-ambient thermal resistance of 218" ClW (derating factor of 4.5 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 '"s; duty cycle = 1%. 6. Saturation voltage measured with 1/4" lead length. 7. For product family characteristic curves. refer to Curve Set T149.
3-267
2N3107/2N310S/2N3109

SYMBOL CHARACTERISTIC hFE DC Pulse Current Gain (Note 5)
3107/9 MIN MAX
3108 MIN MAX 40 25 20 15 120
UNITS
TEST CONDITIONS Ie = 150 mA, VCE = 1.0 V Ic = 500 mA, VCE = 10 V Ic = 0.1 mA, VCE = 10 V Ic = 150 mA, VCE = 10 V, TA = -55C
100 40 35 30
300
VCEOISUS)
Collector to Emitter Sustaining Voltage (Notes 4 &5) (2N31 07) (2N31 08) (2N31 09) Collector to Emitter Saturation Voltage (Note 5) (Notes 5 & 6) Base to Emitter Saturation Voltage (Note 5) (Notes 5 & 6) Open Circuit Output Capacitance (2N3107) (2N31 08) (2N31 09) Open Circuit Input Capacitance Turn On Time (test circuit no. 288) Turn Off Time (test circuit no. 289)
i
60 60 40 0.25 1.0 1.1 2.0 20 20 25 80 200 1000

!
V V V 0.25 1.0 V V V V pF pF pF pF ns ns
Ie = 30 mA, la = 0 Ie = 30 mA, la = 0 Ic = 30 mA, la = 0

Ic = 150 mA, la = 15 mA Ic=1.0A,la=100mA Ic = 150 mA, la = 15 mA Ic = 1.0 A, la = 100 mA Vca=10V,IE =0,f=140kHz Vca = 10 V, IE = 0, f = 140 kHz Vca = 10V, IE =0, f=140kHz VEa = 0.5 V, IE = 0, f = 140 kHz Ic = 150 mA, la1 la2 = 7.5 mA Ie = 150 mA, la1 la2 = 7.5 mA
VCEISa!)
VaEIa !)
1.1
2.0
Cob
Gb
80 200 600
ton toff
= 7.5 mA, = 7.5 mA,
3-268
FAIRCHILD
2N3251/PN3251 FTS03251
VCEO ... -40 V (Min) (2N/PN/FTS03251) hFE ... 100-300 @ 10 mA NF ... 6.0 dB @ Ie = 100 p.A, VCE =-5.0 V Complements ... 2N3946 (40 V); 2N870, 2N871 (60 V) - (TO-18); 2N3903, 2N3904 (40 V)
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current PN/FTSO 2N -55 C to 150 C -65 C to 2000 C 150C 175C
I
FTSO 0.350 W
PN 0.625 W 1.0W
2N 0.36W 1.2W
-40 V -50 V -5.0 V 200 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVcEo BVcBo BVEBO ICEx IBL hFE CHARACTERISTIC Collector to Emitter Breakdown Voltage (Notes 4 & 5) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Reverse Current (Note 5) Base Current DC Current Gain 80 MIN -40 -50 -5.0 20 50 MAX UNITS V V V nA nA Ic Ic IE TEST CONDITIONS
= 10 mA, IB = 0
90
= 10 p.A, IE = 0 = 10 p.A, Ic = 0 VCE = -40 V, VEB = -3.0 V VCE = -40 V, VEB = -3.0 V Ic = 100 p.A, VeE = -1.0 V Ic = 1.0 p.A, VCE = -1.0 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200' C and (TO-18) junction-to-case thermal resistance of 145 CIW (derating factor of 6.9 mW/'C); junction-to-ambient thermal resistance of 486C/W (derating factor of 2.1 mW/'C) for 2N series. These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 125CIW (derating factor of 8.0 mW/C); junction-to-ambient thermal resistance of 2OQO CIW (derating factor of 5.0 mW;o C); (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 1'9; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T215. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-269
-----_.
__ .. _ - - -
2N3251/PN3251 FTS03251

SYMBOL CHARACTERISTIC hFE VCElsall V8EIsall Cob Cib hie hie hie hoe h,e td t, ts tl rb'C c NF DC Pulse Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Admittance Input Capacitance High Frequency Current Gain Small Signal Current Gain Input Impedance Output Admittance Voltage Feedback Ratio Turn On Delay Time (test circuit no. 333) Rise Time (test circuit no. 333) Storage Time (test circuit no. 239) Fall Time (test circuit no. 239) Col/ector Base Time Constant Noise Figure 3.0 100 2.0 10 400 12 k!l }.Imhos x10-4 ns ns ns ns ps dB -0.6 MIN 100 30 MAX 300 -0.25 -0.50 -0.9 -1.2 6.0 8.0 V V V V pF pF UNITS TEST CONDITIONS Ic = 10 rnA, VCE = -1.0 V Ic = 50 rnA, VCE =-1.0 V Ic = 10 rnA, 18 = 1.0 rnA Ic = 50 rnA, 18 = 5.0 rnA Ic = 10 rnA, 18 = 1.0 rnA Ic = 50 rnA, 18 = 5.0 rnA VC8 = 10 V, IE = 0, f = 100 kHz VE8 = 1.0 V, Ic = 0, f = 100 kHz Ic = 10 rnA, VCE= -20V, f = 1 OOMHz Ic = 1.0 rnA, VCE = 10 V, f = 1.0 kHz Ic = 1.0 rnA, VCE = 10 V, f = 1.0 kHz Ic = 1.0 rnA, VCE = 10 V, f = 1.0 kHz Ic = 1.0 rnA, VCE = 10 V, f = 1.0 kHz Ic = 10 rnA, Vcc = 3.0 V, 181 = 1.0 rnA Ic = 10 rnA, Vcc = 3.0 V, 181 = 1.0 rnA Ic = 10 rnA, Vcc = 3.0 V, 181 = 182 = 1.0 rnA Ic = 10 rnA, Vcc = 3.0 V, 181 = 182 = 1.0 rnA Ic = 10 rnA, VCE =-20V, f=31.8MHz Ic = 100 }.lA, VCE = -5.0 V, f = 100 Hz, RG = 1.0 k!l
60
20 35 35 200
50
250 6.0
3-270
FAIRCHILD'
2N3253
NPN Switching Type
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -65 C to 200 C Operating Junction Temperature 200C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25" C case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VeBo Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
PACKAGE 2N3253
TO-39
0.8W 3.0W
40V 75 V 5.0 V 1.0 A
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Collector to Base Breakdown BVcBO Voltage BVEBO lEBO ICBO ICEX IBL hFE Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Reverse Current (100C) Collector Reverse Current Base Current DC Pulse Current Gain (Note 5) 25 25 20 40 0.35 0.6 1.2 0.7 1.0 1.3 1.8 MIN 75 5.0 50 500 75 500 500 75 V V V V V V V MAX UNITS V V nA nA
~A
TEST CONDITIONS Ic IE
= 10 ~A,
IE
=0
nA nA
VCEOISUS' VCElsall
Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturatfon Voltage (Pulsed) (Note 5) Base to Emitter Saturation Voltage (Pulsed) (Note 5)
= 10 ~A, Ic = 0 = 4.0 V, Ic = 0 VCB = 60 V, IE = 0 VCB = 60 V, IE = 0 VeE = 60 V, VEB = 4.0 V VCE = 60V, VOB = 4.0 V Ic = 150 rnA, VCE = 1.0 V Ic = 375 rnA, VCE = 1.0 V Ic = 750 rnA, VCE = 5.0 V Ie = 10 rnA, IB = 0
VEB
VBEIsall
= 150 rnA, IB = 15 rnA = 500 rnA, IB = 50 rnA = 1.0 A, IB = 100 rnA Ic = 150 rnA, IB = 15 rnA Ic = 500 rnA, IB = 50 rnA Ie = 1.0 A, IB = 100 rnA
Ie Ic Ic
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (TO-92) junction-to-case thermal resistance of 125 CIW (derating factor of 8.0 mW/oC); junction-to-ambient thermal resistance of 200" CIW (derating factor of 5.0 mW/o C); (TO-236) junction-to-ambient thermal resistance of 357" CIW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length ~ 300 "s;.duty cycle';; 1%. 6. For product family characteristic curves, refer to Curve Set T139.
3-271
2N3253

SYMBOL CHARACTERISTIC Cob Cib h'e Output Capacitance Input Capacitance High Frequency Current Gain Turn On Delay Time (test circuit no. 3164) Rise Time (test circuit no. 3164) Storage Time (test circuit no. 3165) Fall Time (test circuit no. 3165) Total Control Charge (test circuit no. 3163)
1.75 15 35 40
MIN
MAX
12 80
UNITS pF pF ns ns ns ns ncoul VCB
TEST CONDITIONS
tct
I
= 20 V, IE = 0 VEB = 0.5 V, Ie = 0 Ie = 50 rnA, VeE = 10 V, f = 100 MHz Ie = 500 rnA, IBI = 50 rnA = 500 rnA, Ie = 500 rnA, Ie = 500 rnA, Ic = 500 rnA,
Ie
I,
t,
to
t,
30
5.0
Or
= 50 rnA IBI = IB2 = 50 rnA IBI = 182 = 50 rnA IB = 50 rnA

IBI
3-272
FAIRCHILD
2N3439/2N3440
NPN Power
Po ... 10 W @ Tc = 25C
VCEO ... 250-350 V (Min)
Temperatures
TO-39 TO-39
Storage Temperature -65 C to 200 C Operating Junction Temperature -65 C to 200 C

Total Dissipation at 25C Ambient Temperature 25 C Case Temperature

Voltages & Currents
1.0 W 10 W
3439
350 V 450 V 7.0 V 1.0 A 0.5 A
3440
250 V 300 V 7.0V 1.0 A 0.5 A
UNITS JJ.A VEB TEST CONDITIONS
Collector to Emitter Voltage (Applicable from 0 to 50 mAl VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current (Continuous) IB Base Current (Continuous)
VCEO
SYMBOL CHARACTERISTIC Emitter Cutoff Current lEBO ICBO hFE VCElsatl VBElsatl COb Clb Ihlel h,e Collector Cutoff Current (2N3439) (2N3440) DC Pulse Current Gain (Note 2) Collector to Emitter Saturation Voltage (Note 2) Base to Emitter Saturation Voltage (Note 2) Output Capacitance Input Capacitance Magnitude of Common Emitter Small Signal Current Gain Small Signal Current Gain
MIN
MAX 20 20 20
JJ.A JJ.A
V V pF pF
40
160 0.5 1.3 10 75
= 6.0 V, Ic = 0 VCB = 360 V, IE = 0 VCB = 250 V, IE = 0 Ic = 20 mA, VCE = 10 V Ic = 50 mA, IB = 4.0 mA

Ic
= 50 mA,
IB
= 4.0 V
VCB
VEB
3.0 25
= 10 V, IE = 0, f = 1.0 MHz = 5.0 V, Ic = 0, f = 1.0 MHz Ic = 10 mA, VCE = 10 V, f = 5.0 MHz = 5.0 mA, VCE = 10 V, f = 1.0 kHz
Ic
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction operating temperature of 200 C and junction-to-case thermal resistance of 17.5 lC/W (derating factor of 5.0 mW/o C); junction-to-ambient thermal resistance of 175 CIW (derating factor of 5.7 mW/" C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length =300 JAB; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T333.
3-273
FAIRCHIL.D
2 N3700/2N3701
VCEO ... 80 V (Min) @ 30 mA VCElSatl ... 0.5 V (Max) @ 500 mA
TO-18 TO-18
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 1000 C Temperature 25 C Temperature
-65 C to 2000 C 200C
case case
0.5W 1.0W 1.8 W
Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
80V 140 V 7.0 V 1.0 A
SYMBOL CHARACTERISTIC Collector to Base Breakdown BVcBo Voltage BVEBO lEBo ICBO hFE Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current
3700 MIN MAX 140 7.0 10 10 10 300
3701 MIN MAX 140 7.0 10 10 10 40 40 30 30 15 120 120 100 100
UNITS V V nA nA /lA
TEST CONDITIONS Ic = 100 /lA, IE = 0 IE = 100 /lA, Ic = 0 VEB = 5.0 V, Ic = 0 VCB = 90 V, IE = 0 VCB = 90 V, IE = 0, T A= 1500 C Ic = 150 mA, VCE = 10 V Ic = 10 mA, VCE = 10 V Ic=0.1 mA,VCE =10V Ic = 500 mA, VCE = 10 V Ic = 1.0 mA, VCE = 10 V Ic = 150 mA, VCE = 10 V, TA = -55 C
DC Pulse Current Gain (Note 5) 100 90 50 50 15 40
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200" C and junction-to-case thermal resistance of 97" C/W (derating factor of 10.3 mW/' C); junction-to-ambientthermal resistance of 350' ClW (derating factor of 2.85 mW/' C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S; duty cycle .. 1%. 6. For product family characteristic curves, refer to Curve Set T149.
3-274
2N3700/2N3701
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Collector to Emitter Sustaining VCEO(SUS) Voltage (Notes 4 & 5) VeE'" VeE'sa!) COb C;b h,. h'e rb'C C NF Pulsed Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Pulsed) Output Capacitance Input Capacitance High Frequency Current Gain Small Signal Current Gain Collector to Base Time Constant Noise Figure 5.0 80 25 3700 MIN MAX 80 0.2 0.5 1.1 12 60 10 400 400 4.0 4.0 30 25 3701 MIN MAX 80 0.2 0.5 1.1 12 60 10 200 400 ps dB UNITS V V V V pF pF TEST CONDITIONS Ie = 30 mA, Ie = 0 Ie = 150 mA, Ie = 15 mA Ie = 500 mA, Ie = 50 mA Ie = 150 mA, Ie = 15 mA Vee = 10 V, IE =0, f =1.0 MHz VEe =0.5 V, Ie =0, f=1.0MHz Ie = 50 mA, VeE = 10 V, f = 20 MHz Ie = 1.0 mA, VeE = 5.0 V, f = 1.0 kHz Ie = 10 mA, Vee = 10 V, f = 4.0 MHz Ie = 100 !lA, VeE = 10 V, f = 1.0 kHz, RG = 1.0 kfl
3-275
FAIRCHILD
2N3724/2N3725 2N4013/2N4014
NPN Small Signal High Current High Speed Switches
VCEO ... 30 V (Min) (2N3724, 2N4013), 50 V (Min) (2N3725,2N4014) VCEIS8U ... 0.65 V (Max) @ 800 mA, 0.75 V (Max) @ 1.0 A (2N3724,2N4013) hFE ... 60-150 @ 1.0 A (2N3724, 2N4013) ton .. 35 ns (Max), toff .. , 60 ns (Max) @ 500 mA
PACKAGE 2N3724 2N3725 2N4013 2N4014
TO-5 TO-5 TO-18 TO-18
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 250 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VCEs Collector to Emitter Voltage VEBO Emitter to Base Voltage Collector Current (Note 5) Ic DC Collector Current Ic
-65 0 C to 2000 C 2000 C
4013/4 0.36 W 1.2 W 3724/4013 30 V

50 V 50 V 6.0V 1.0 A 500 mA
3724/5 0.8W 3.5W 3725/4014 50 V

80 V 80 V 6.0 V 1.0 A 500 mA
3724/4013
SYMBOL CHARACTERISTIC BVcEs BVcBo BVEBo Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage MIN 50 50 6.0 MAX
3725/4014
MIN 80 50 6.0 MAX UNITS V V V TEST CONDITIONS Ic = 10 MA, VBE = 0 Ic = 10 MA, IE = 0 IE = 10 MA, Ic = 0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200" C and junction-to-case thermal resistance of 50" CIW (derating factor of 20 mW/" C) for 2N3724 and 2N3725; and 146" CIW (derating factor of 6.85 mWr C) for the 2N4013 and 2N4014; junction-to-ambient thermal resistance of 219" CIW (derating factor of 4.56 mwr C) for the 2N3724, 2N3725, and 485" CIW (derating factor of 2.06 mW/" C) for the 2N4013 and 2N4014. 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 )lS; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T162 for 2N3724/5 and T139 for 2N4013/4
3-276
2N3724/2N3725 2N4013/2N4014

SYMBOL CHARACTERISTIC Collector Cutoff Current Icso MIN
3724/4013 MAX 1.7

120
MIN
3725/4014 MAX
1.7 120
UNITS p.A p.A p.A p.A p.A p.A
Vcs Vcs Vcs Vcs
TEST CONDITIONS = 40 V, IE = 0 = 60 V, IE = 0 =40V, IE =0, TA =100"C = 60 V, IE =0, TA = 1000 C
ICES hFE
Col/ector Reverse Current DC Pulse Current Gain (Note 5) 60 35 40 30 30 25 30 20
10 10 150 60 35 40 25 30 20 30 20 50 0.25 0.2 0.32 0.42 0.65 0.75 0.76 0.86 1.1 1.5 1.7 1.1 12 55 3.0 35 60 3.0 35 60 0.25 0.26 0.4 0.52 0.8 0.95 0.76 0.86 1.1 1.5 1.7 1.1 10 55 150
VCE = 50 V, IE = 0 VCE = 80 V, IE = 0 Ic = 100 mA, VCE = 1.0 V Ic = 500 mA, VCE = 1.0 V Ic = 300 mA, VCE = 1.0 V Ic = 1.0 A, VCE = 5.0 V Ic = 10 mA, VCE =1.0 V Ic = 800 mA, VCE = 2.0 V Ic = 100 mA, VCE = 1.0 V, TA = -55C Ic = 500 mA, VCE = 1.0 V, TA = -55C
VCEO(sus) VCE(sau
Col/ector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage (Note 5)
30
V V V V V V V V V V V V V pF pF
Ic = 10 mA, Is = 0 Ic Ic Ic Ic Ic Ic = = = = = = 10 mA, Is = 1.0 mA 100 mA, Is = 10 mA1 300 mA, Is = 30 mA 500 mA, Is = 50 mA 800 mA, Is = 80 mA 1.0 A, Is = 100 mA
VSE(sau
0.8 Cob Cib h,. Output Capacitance Input Capacitance High Frequency Current Gain Turn On Time (test circuit no. 265) Turn Off Time (test circuit no. 265)
0.8
Ic = 10 mA, Is = 1.0 mA Ic = 100 mA, Is = 10 mA Ic = 300 mA, Is = 30 mA Ic = 800 mA, Is = 80 mA Ic=1.0A,ls=100mA Ic = 500 mA, Is = 50 mA Vcs = 10 V, IE = 0 VSE = 0.5 V, Ic = 0 Ic = 50 mA, VCE = 10 V, f = 100 MHz
ton to"
ns ns
Ic = 500 mA, IS1 = 50 mA Ic = 500 mA, IS1 = 50 mA, IS2 = -50 mA
3-277
FAIRCHILD
2N3903/FTS03903 2N3904/FTS03904
VCEO ... 40 V (Min) hFE ... 100-300 @ 10 mA (2N/FTS03904) NF ... S.O dB (Max) Wide Band (2N/FTS03904) Complements ... 2N390S, 2N3906
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 250 C Ambient Temperature 700 C Ambient Temperature 250 C Case Temperature Voltages & Currents VCEo Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
-550 C to 1500 C 1500 C
2N 0.625 W 0.400 W 1.0W
FTSO 0.350 W'
40V 60V 6.0V 200 mA
SYMBOL CHARACTERISTIC BVCEO BVcBo BVEBO ICEX IBL hFE Collector to Emitter Breakdown Voltage (Note 4) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current DC Current Gain (Note 4)
3903 MIN MAX 40 60 6.0 50 50 20 35 50 30 15
3904 MIN MAX 40 60 6.0 50 50 40 70 100 60 30
UNITS V V V nA nA Ic Ic IE
TEST CONDITIONS
= 1.0 mAo = 10 p.A. = 10 p.A.
IB
=0
IE Ic
=0 =0
VCE VCE
150
300
= 30 V. VEB = 3.0 V = 30 V. VEB = 3.0 V Ic = 0.1 mAo VCE = 1.0 V Ic = 1.0 mAo VCE = 1.0 V Ic = 10 mAo VCE = 1.0 V Ic = 50 mAo VCE = 1.0 V Ic = 100 mAo VCE = 1.0 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (TO-92) junction-to-case thermal resistance of 1250 CIW (derating factor of 8.0 mW/o C); junction-to-ambient thermal resistance of 2000 C/W (derating factor of 5.0 mWr C); (TO-236) j unction-to-ambient thermal resistance of 3570 C/W (derating factor of 2.8 mWr C). 4. Pulse conditions: length =300 ItS; duty cycle = 2%. 5. For product family characteristic curves, refer to Curve Set T144. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-278
2N3903/FTS03903 2N3904/FTS03904

SYMBOL CHARACTERISTIC Collector to Emitter Saturation VeECsatl Voltage (Note 4) VSECsatl COb Cib hie hie hoe hre Base to Emitter Saturation Voltage (Note 4) Output Capacitance Input Capacitance Small Signal Current Gain Input Impedance Output Admittance Voltage Feedback Ratio Current Gain Bandwidth Product Turn On Delay Time (test circuit no. 526) Rise Time (test circuit no. 526) Storage Time (test circuit no. 527) Fall Time (test circuit no. 527) Noise Figure 50 1.0 1.0 0.1 250 35 35 175 50 6.0 3903 MIN MAX 0.2 0.3 0.65 0.85 0.95 4.0 8.0 200 8.0 40 5.0 100 1.0 1.0 0.5 300 35 35 200 50 5.0 3904 MIN MAX 0.2 0.3 0.65 0.85 0.95 4.0 8.0 400 10 40 8.0 kO
~mho
UNITS V V V V pF pF
TEST CONDITIONS le=10mA,ls=1.OmA Ie = 50 mA, Is = 5.0 mA Ie = 10 mA, Is = 1.0 mA Ie = 50 mA, Is = 5.0 mA Ves = 5.0 V, IE = 0, f = 100kHz VSE = 0.5 V, Ie = 0, f = 100kHz Ie = 1.0 mA, VeE = 10 V, f = 1.0 kHz Ie = 1.0 mA, VeE = 10 V, f = 1.0 kHz Ie = 1.0 mA, VeE f = 1.0 kHz
= 10 V,
x10-4 MHz ns ns ns ns dB
Ie = 1.0 mA, VeE = 10 V, f = 1.0 kHz Ie = 10 mA, VeE f = 100 MHz
fr
td tr
= 20 V,
Ie = 10 mA, Vee = 3.0 V, ISl = 10 mA, VSECOFFi = 0.5 V Ie = 10 mA, Vee = 3.0 V, ISl = 10 mA, VSECOFFi = 0.5 V Ie = 10 mA, Vee = 3.0 V, ISl = IS2 = 1.0 mA Ie = 10 mA, Vee = 3.0 V, ISl = IS2 = 1.0 mA Ie = 100 ~A, VeE = 5.0 V, f = 10 Hz to 15.7 kHz, RG=1.0kO
to
tl NF
3-279
FAIRCHILO
2N390S/FTS03905 2N390S/FTS0390S
VeEo ... -40 V (Min) hFE ... 100-300 @ 10 mA (2N3906) NF ... 4.0 dB (Max) Wide Band (2N3906) Complements ... 2N3903, 2N3904
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 250 C Ambient Temperature 700 C Ambient Temperature 250 C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) Veeo Collector to Base Voltage VEeo Emitter to Base Voltage Ie Collector Current
-550 C to 1500 C 1500 C
2N 0.625 W 0.400 W 1.0W
FTSO 0.350 W*
-40 V -40 V -5.0 V 200 mA
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVeEo BVceo BVEeo ICEx leL hFE 3905 MIN MAX Collector to Emitter Breakdown -40 Voltage (Note 5) CHARACTERISTIC Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current DC Pulse Current Gain (Note 5) 30 40 50 30 15 -40 -5.0 50 50 60 80 100 60 30 3906 MIN MAX -40 -40 -5.0 50 50 UNITS V V V nA nA TEST CONDITIONS Ie = 1.0 mA, Ie = 0 Ie = 10 MA, IE = 0 IE = 10 MA, Ic = 0 VCE = -30 V, VEe = -3.0 V VCE = -30 V, VEe = -3.0 V Ic Ic Ic Ic Ic
= = = = =
150
300
0.1 mA, VCE = -1.0 V 1.0 mA, VCE = -1.0 V 10 mA, VCE = -1.0 V 50 mA, VCE = -1.0 V 100 mA, VCE = -1.0 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (TO-92) junction-to-case thermal resistance of 1250 C/W (derating factor of 8.0 mW/o C); junction-to-ambient thermal resistance of 2000 C/W (derating factor of 5.0 mWfO C); (TO-236) junction-to-ambient thermal resistance of 357 0 CIW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions; length = 300 I'S; duty cycle"; 2%. 6. For product family characteristic curves, refer to Curve Set T215. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-280
2N390S/FTS0390S 2N3906/FTS03906

SYMBOL CHARACTERISTIC Collector to Emitter Saturation VeElsall Voltage (Note 5) VBElsall Cob Cib h'e hie hoe hre Base to Emitter Saturation Voltage (Note 5) Output Capacitance Input Capacitance Small Signal Current Gain Input Impedance Output Admittance Voltage Feedback Ratio Current Gain Bandwidth Product Turn On Delay Time (test circuit no. 333) Rise Time (test circuit no. 333) Storage Time (test circuit no. 239) Fall Time (test circuit no. 239) Wide Band Noise Figure 50 0.5 1.0 0.1 200 35 35 200 60 5.0 3905 MIN MAX --{J.25 -0.4 3906 MIN MAX --{J.25 --{J.4 UNITS V V V V pF pF TEST CONDITIONS Ie = 10 mA, IB = 1.0 mA Ie = 50 mA, IB = 5.0 mA Ie = 10 mA, IB = 1.0 mA Ie = 50 mA, IB = 5.0 mA VeB =-5.0V,IE=O, f=100kHz VEB = --{J.5 V, Ie =0, f = 100 kHz Ie = 1.0 mA, VeE = -10 V, f = 1.0 kHz k!1 Itmho x10-4 MHz 35 35 225 75 4.0 ns ns ns ns dB Ie = 1.0 mA, VeE = -10 V, f = 1.0 kHz Ie = 1.0 mA, VeE = -10 V, f = 1.0 kHz Ie = 1.0 mA, VeE = -10 V, f = 1.0 kHz Ie = 10 mA, VeE = -20 V, f=100MHz le'= 10 mA, IB1 '= 1.0 mA, Vee = -3.0 V le'= 10 mA, IB1 '= 1.0 mA, Vee = -3.0 V le'= 10 mA, IB1 '= 1.0 mA, IB2'= -1.0 mA, Vee = -3.0 V le'= 10 mA, IB1 '= 1.0 mA, IB2'= -1.0 mA, Vee = -3.0 V Ie = 100 itA, VeE = -5.0 V Rs=1.0k!1, f = 10 Hz to 15.7 kHz
-0.65 --{J.85 --{J.G5 -0.85 -0.95 -0.95 4.5 10 200 8.0 40 5.0 100 2.0 3.0 0.1 250 4.5 10 400 10 60 10
h
td tr
to
t, NF
3-281
FAIRCHILD
2N3946/FTS03946
NPN Small Signal General Purpose Amplifier & Switch
VCEO ... 40 V (Min)
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current 2N -65 C to 200 C 175C FTSO -55Cto 150C 150C
T018 T0236AA
2N 0.36 mW 1.2 W
FTSO 0.350 W'
40 V 60 V 6.0V 200 mA
40 V 60V 6.0 V 200 mA
SYMBOL CHARACTERISTIC BVCEO BVcBo BVEBO ICEX IBL hFE Collector to Emitter Breakdown Voltage (Note 4) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Base Cutoff Current DC Current Gain (Note 5)
MIN 40 60 6.0
MAX
UNITS V V V
TEST CONDITIONS Ic = 10 mA, IB = 0 Ic = 10 p,A, IE = 0 IE = 10 p,A, Ic = 0 VCE = 40 V, VEB = 3.0 V VCE = 40 V, VEB = 3.0 V, T A = 150C VCE = 40 V, VEB = 3.0 V Ic = 0.1 mA, VCE = 1.0 V Ic = 1.0 mA, VCE = 1.0 V Ic =10mA,VcE=1.0V Ic = 50 mA, VCE = 1.0 V
10 15 25 30 45 50 20
nA p,A nA
150 0.2 0.3 V V V V
VCElsatl VBElsatl
Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) 0.6
Ie = 10 mA, IB = 1.0 mA Ic = 50 mA, IB = 5.0 mA Ic = 10 mA, IB = 1.0 mA Ic = 50 mA, IB = 5.0 mA
0.9 1.0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 C and (TO-92) iunction-to-case thermal resistance of 125C/W (derating factor of 8.0 mW/C); junction-to-ambient thermal resistance of 200C/W (derating factor of 5.0 mW/C); (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW;o C). 4. Rating refers to a high current paint where collector to emitter voltage is lowest. 5. Pulse conditions: length ~ 300 !'s; duty cycle ~ 2%. 6. For product family characteristic curves, refer to Curve Set T144. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-282
2N3946/FTS03946
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Output Capacitance Cob Cib h,e hie hoe hre td tr t. t, rb'C c NF Input Capacitance Current Gain Bandwidth Product Input Impedance Output Admittance Voltage Feedback Ratio Delay Time (test circuit no. 526) Rise Time (test circuit no. 526) Storage Time (test circuit no. 527) Fall Time (test circuit no. 527) Collector to Base Time Constant Noise Figure 2.5 0.5 1.0 6.0 30 10 35 300 300 75 200 5.0 kO JLmhos x10- 4 ns ns ns ns ps dB . MIN MAX 4.0 8.0 UNITS pF pF TEST CONDITIONS Vee = 10V, IE = 0, f = 100 kHz VEe = 1.0 V, Ie = 0, f = 100 kHz Ie = 10 rnA, VeE = 20 V, f = 100 MHz Ie = 1.0 rnA, VeE = 10 V, f = 1.0 kHz Ie = 1.0 rnA, VeE = 10V, f = 1.0 kHz Ie = 1.0 rnA, VeE = 10 V, f = 1.0 kHz Ie = 10 rnA, Vee = 3.0 V, leI = 1.0 rnA, VeEIOFF) = 0.5V Ie = 10 rnA, Vee = 3.0 V, leI = 1.0 rnA, VeEloFFI = 0.5V Ie = 10 rnA, Vee = 3.0 V, leI = le2 = 1.0 rnA Ie = 10 rnA, Vee = 3.0 V, leI = le2 = 1.0 rnA Ie = 10 rnA, VeE = 20V, f=31.8MHz Ie = 100 JLA, VeE = 5.0 V, RG = 1.0 kO, f = 10 Hz to 15.7 kHz
3-283
FAIRCHILD
2N3962/PN3962 FTS03962
PNP Low Level Low Noise Amplifiers
VCEO ... -60 V (Min) Excellent Beta Linearity from 1.0
JJA to 50 mA
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 2So C Ambient Temperature 2So C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current PN/FTSO 2N -S5 C to 1S0 C -6So C to 200 C 1S0C 17SoC
2N 0.36W 1.2 W
PN 0.62S W 1.0W
FTSO 0.3S0 W*
~OV
~OV ~.OV
200 mA
ELECTRICAL CHARACTERISTICS (2S0C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVcBo BVEBO BVCES lEBO ICES hFE Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter Cutoff Current Collector Reverse Current DC Current Gain 60 100 100 100 MIN
~O
~.O
MAX
UNITS V V V Ic = 10 IE = 10
TEST CONDITIONS
J-LA, J-LA,
IE = 0 Ic = 0
~O
Ic = 10 ILA, IB = 0 VEB = -4.0 V, Ic = 0 VCE = -SO V, VEB = 0 VCE = -SO V, VEB = 0, TA = 1S0C Ic = 1.0 ILA, VCE = -S.O V Ic = 10 ILA, VCE = -S.O V Ic = 100 ILA, VCE = -5.0 V Ic = 1.0 mA, VCE = -5.0 V Ic = 10 J-LA, VCE=-S.OV, TA=-SSoC Ic = 1.0 mA, VCE=-S.OV, TA=100C
10 10 10 300 4S0 600
nA nA ILA
40
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 C and (TO-92) junction-to-case thermal resistance of 125 C/W (derating factor of 8.0 mW/o C); junction-to-ambient thermal resistance of 200 c/w (derating factor of 5.0 mW;oC); (TO-236) junction-to-ambient thermal resistance of 357C/W (derating factor of 2.8 mW/oC). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 pS; duty cycle = 1%. 6. For product family characteristic curves. refer to Curve Set T219. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-284
2N39621PN39621FTS03962

SYMBOL CHARACTERISTIC hFE DC Pulse Current Gain (Note 5) MIN 100 90 45 -0.25 -0.4 -0.9 -0.95 -60 6.0 15 2.0 100 2.5 5.0 8.0 500 V V V V V pF pF MAX UNITS TEST CONDITIONS Ic = 10 mA, VCE = -5.0 V Ic = 50 mA, VCE = -5.0 V Ic =50mA, VCE=-5.0 V, TA =-55 C Ie = 10 mA, IB = 0.5 mA Ic = 50 mA, IB = 5.0 mA Ie = 10 mA, IB = 0.5 mA Ic = 50 mA, IB = 5.0 mA Ie = 5.0 mA, IB = 0 VCB = -5.0 V, IE = 0, f = 1.0 MHz VEB = -5.0 V, Ic = 0, f = 1.0 MHz Ic = 0.5 mA, VCE = -5.0 V, f = 20 MHz Ic= 1.0 mA, VCE = -5.0 V, f = 1.0 kHz kO JLmhos x1o-4 dB Ic = 1.0 mA, VCE = 5.0 V, f = 1.0 kHz Ic = 1.0 mA, VCE=-5.0 V, f = 1.0 kHz Ic = 1.0 mA, VCE=-5.0 V, f = 1.0 kHz Ic = 20 JLA, VCE = -5.0 V, Rs = 10 kn, BW = 15.7 Hz, f = 10 Hz to 10 kHz
VCElsatl VCECs.tl VBEIs.tl VBEC..tl VCEOCSUSI COb Cib h,e h'e hie hoe hre NF
Collector to Emitter Saturation Voltage Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage Base to Emitter Saturation Voltage (Note 5) Collector to Emitter Sustaining Voltage (Notes 4 & 5) Open Circuit Output Capacitance Open Circuit Input Capacitance High Frequency Current Gain Small Signal Current Gain Input Resistance Output Conductance Voltage Feedback Ratio Wide Band Noise Figure
17
40
10 3.0
3-285
F=AIRCHILD
2N4030/2N4031
2N403212N4033
PNP Small Signal General Purpose Amplifiers
VCEO ... 60 V (Min) (2N4030/2), 80 V (Min) 2N4031/3) hFE ... 100-300 @ 10 mA (2N403213), 40 (Min) 2N4032), 25 (Min) (2N4033) @ 1.0 A Complements ... 2N3107, 2N3108, 2N3109, 2N3020
PACKAGES 2N4030 2N4031 2N4032 2N4033
TO-39 TO-39 TO-39 TO-39
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -65 C to 2000 C Operating Junction Temperature 2000C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
O.SW 4.0W 4030/2 4031/3 -SO V
--eO V --eo V
-5.0 V 1.0 A
-80 V
-5.0 V 1.0 A
ELECTRICAL CHARACTERISTICS (25" C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVcBO BVEBO lEBO ICBO Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current 4030 MIN MAX 4031 MIN MAX -SO -5.0 10 50 50 50 50 hFE DC Current Gain 30 30 10 UNITS V V /LA nA nA /LA /LA TEST CONDITIONS Ic = 10 /LA, IE = 0 Ie = 10 /LA, Ic = 0 VEB = -5.0 V, Ic = 0 VCB = -50 V, VCB = --eO V, VCB = -50 V, TA = 150C VCB = --eO V, TA = 150C Ie =
1oo~,
--eO
-5.0
IE = 0 IE = 0 IE = 0, IE = 0, VCE = -5.0 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200" C and junction-to-case thermal resistance of 43.7" CIW (derating factor of 22.8 mW/o C); junction-to-ambient thermal resistance of 219" CIW (derating factor of 4.56 mW/oC). 4. Rating refers 10 a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T224.
3-2S6
2N4030/2N4031 2N403212N4033

SYMBOL hFE CHARACTERISTIC DC Pulse Current Gain (Note 5) 4030 MIN MAX 40 25 15 15 --60 -0.15 -0.5 11.0 -1.1 -1.2 -0.9 20 110 1.0 4.0 350 50 100 1.0 120 4031 MIN MAX 40 25 10 15 -80 -0.15 -0.5 -1.1 -0.9 20 110 4.0 350 50 100 ns ns ns 120 UNITS TEST CONDITIONS
Ie = 100 rnA, VCE = --5.0 V

Ic = 500 rnA, VCE = --5.0 V Ic = 1.0 A, VCE = --5.0 V Ic = 100 rnA, VCE = -5.0 V, TA = -55C V V V V V V V pF pF
VCEO VCE(Satl
Collector to Emitter Sustaining Voltage (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Input Capacitance Magnitude of Common Emitter Small Signal Current Gain Storage Time (test circuit no. 341) Fall Time (test circuit no. 341) Turn On Time (test circuit no. 341)
Ie = 10 rnA (pulsed), la = 0
Ic = 150 rnA, la = 15 rnA Ic = 500 rnA, la = 50 rnA Ic = 1.0 A, la = 100 rnA Ic = 500 rnA, VCE = -0.5 V Ic = 1.0 A, VCE = -1.0 V Ic = 150 rnA, la = 15 rnA Vca =-10V,IE=O, f=1.0MHz VaE = -0.5 V,lc=O, f=1.0MHz Ic = 50 rnA, VCE = -10 V, f = 100 MHz Ic = 500 rnA, lal = -la2 = 50 rnA Ic = 500 rnA, lal = -la2 =50 rnA Ic = 500 rnA. lal = 50 rnA
VaE(ONI VaE(satl Ccb Cib 1hfel ts tf
ton
SYMBOL CHARACTERISTIC BVcBo BVEao IEao ICBO Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current
4032 MIN MAX --60 -5.0 10 50
4033 MIN MAX -80 -5.0 10 50
UNITS V V J.lA nA nA ~ J.lA
TEST CONDITIONS Ic = 10 J.lA, IE = 0 IE = 10 J.lA, Ic = 0 VEa = -5.0 V, Ic = 0 VCB = --50 V, IE = 0 Vca = --60 V, IE = 0 Vca =-50V,IE=0, TA =150C Vca = --60 V, IE =0, TA =1500 C Ic = 100 J.lA, VCE = -5.0 V Ic = 100 rnA. VCE = -5.0 V Ic = 500 rnA, VCE = -5.0 V Ic = 1.0 A, VCE = -5.0 V Ic = 100 rnA, VCE = --5.0 V, TA = -55C
50 50 hFE hFE DC Current Gain DC Pulse Current Gain (Note 5) 75 100 70 40 40 --60 300 75 100 70 25 40 -80 300
VCEO
Collector to Emitter Sustaining Voltage (Note 5)
Ic = 10 rnA (pulsed), IB = 0
3-287
2N4030/2N4031 2N403212N4033

SYMBOL CHARACTERISTIC VCEIS.!) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Input Capacitance Magnitude of Common Emitter Small Signal Current Gain Storage Time (test circuit no. 341) Fall Time (test circuit no. 341) Turn On Time (see test circuit no. 341) 1.5 4032 MIN MAX -0.15 4033 MIN MAX -0.15 -0.5 -1.0 -1.1 -0.9 20 110 1.5 5.0 350 50 100 ns ns ns UNITS V V V V V V pF pF TEST CONDITIONS Ie = 150 rnA, IB = 15 rnA Ic = 500 rnA, IB = 50 rnA Ic =1.0A,IB=100mA Ic = 500 rnA, VCE = -D.5 V Ic = 1.0 A, VCE = -1.0 V
-D.5
-1.1 11.2
VBEION)
VBE{satl
-D.9
20 110 5.0 350 50 100
Ie = 150 rnA, IB = 15 rnA

VCB = -10V, IE=O, f =1.0MHz VBE = -D.5 V, Ic =0, f =1.0 MHz Ic = 50 rnA, VCE = -10 V, f = 100 MHz Ic = 500 rnA, IB1 Ic = 500 rnA, IB1 Ic
Ccb C;b
1hfel t. tf
= IB2 = 50 rnA = IB2 = 50 rnA = 50 rnA
ton
= 500 rnA,
IB1
3-288
FAIRCHILD
2N4036/2N4037

Temperatures Storage Temperature -65 C to 200 C Operating Junction Temperature -65 C to 200 C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current (Continuous) Base Current (Continuous) IB
TO-39 TO-39
4036
5.0W
4037
1.0 W
4036
-65 V -90 V -7.0 V 1.0 A 0.5A
4037
-40 V -60 V -7.0 V 1.0 A 0.5A
UNITS V V p,A p,A TEST CONDITIONS Ic = 100 rnA, IB = 0 Ic = 0.1 mA VEB = -7.0 V VEB = -5.0 V VCB = -90 V, IE = 0 VCB = -60 V, IE = 0 VCE = -85 V, VBE = -1.5 V VCE = -30 V, VBE = -1.5 V Tc = 150C Ic = 150 mA, VCE = 2.0 V Ie = 100 p,A, VCE = 10 V Ic=1.0mA,VcE=10V Ic = 150 mA, VCE = 10 V Ic = 500 mA, VCE = 10 V V V Ic = 150 mA, IB = 15 mA Ic = 150 mA, IB = 15 mA Ic = 150 mA, VCE = 10 V 1.0

SYMBOL BVCEO BVcBo lEBO leBO ICEX CHARACTERISTIC Collector to Emitter Sustaining Voltage Collector to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current Collector Cutoff Current 10 100 0.25 100 0.1 20 20 40 20
VCE{Satl
2N4036 MIN MAX -65
2N4037 MIN MAX -40 -60
p.A
p,A mA p,A
hFE
DC Current Gain (Note 5)
200 15 50
140 -0.65 -1.4
250 -1.4
Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage (Note 5) Base to Emitter On Voltage
VBE(sati VBE(ON)
-1.4
2. 3. 4. 5. 6.
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. These ratings give a maximum junction temperature of 2000 C and (2N4036) junction-to-case thermal resistance of 35 0 C/W (derating factor of 28.6 mW/ o C); (2N4037) junction-to-case thermal resistance of 1750 C/W (derating factor of 5.71 mW/o C). Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length" 300 pS, duty cycle 0 1%.
For product family characteristic curves, refer to Curve Set T224.
3-289
2N4036/2N4037
ELECTRICAL CHARACTERISTICS (25 0 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC High Frequency Current Gain Ihf~ CCb t, ts tf ton
toft
2N4036 MIN MAX 3.0
2N4037 MIN MAX 3.0 10 30
UNITS
TEST CONDITIONS Ie = 50 mA, VeE = -10 V, f = 20 MHz Ve8 = 10 V, f = 1.0 MHz Ie = 150 mA, 181 = 15 mA Ie = 150 mA, 181 = 182= 15 mA Ie = 150 mA, 181 = 1 82 = 15 mA
Collector to Base Capacitance Rise Time Storage Time Fall Time Turn On Time Turn Off Time 70 600 100 110 700
pF ns ns ns ns ns
Ie = 150 mA, 181 = 15 mA

Ie = 150 mA, 181 = 1 82 = 15 mA
3-290
FAIRCHILD
2N4123/FTS04123 2N4124/FTS04124
VeEo ... 25 V (Min) (2N/FTS04124) hFE ... 120-360 @ 2.0 mA (2N/FTS04124) NF ... 5.0 dB (Max) Wide Band (2N/FTS04124) Complements ... 2N4125, 2N4126
TO-92 TO-92
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25" C Ambient Temperature 70" C Ambient Temperature 250 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) Vesa Collector to Base Voltage VEsa Emitter to Base Voltage Ie Collector Current
-550 C to 150" C 150" C
I
FTSO 0.350 W' 4124 25V
30V 5.0V 200 mA
2N 0.625 W 0.400 W 1.0 W 4123 30V

40V 5.0V 200mA

SYMBOL CHARACTERISTIC BVeEa BVesa BVEBO lEBO leso hFE VeElsatl Collector to Emitter Breakdown Voltage (Note 5) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Pulse Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) 50 25 4123 MIN MAX 30 40 5.0 50 50 150 0.3 120 60 4124 MIN MAX 25 30 5.0 50 50 360 0.3 V UNITS V V V nA nA TEST CONDITIONS Ie = 1.0 mA, Is = 0
le=10~,IE=0
IE = 10I'A, Ie = 0 VES = 3.0 V, Ie = 0 Ves = 20 V, IE = 0 Ie = 2.0 mA, VeE = 1.0 V Ie = 50 mA, VeE = 1.0 V Ie = 50 mA, Is = 5.0 mA
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (TO-92j junction-to-casethermal resistance of 125' CIW (derating factor of 8.0 mWr Cj: junction-to-ambient thermal resistance of 200" C/W (derating factor of 5.0 mWr Cj: (TQ-236j junction-to-ambient thermal resistance of 357' C/W (derating factor of 2.8 mWr Cj. 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 "": duty cycle = 2%. . 6. For product family characteristic curves, refer to. Curve Set T144. Package mounted on 99.5% alumina e mm x e mm x 0.6 mm.
2N4123/FTS04123 . 2N4124/FTS04124
SYMBOL CHARACTERISTIC Base to Emitter Saturation V8Elaati Voltage (Note 5) Ccb Clb Ihlel hIe NF Collector to Base Capacitance Input Capacitance Magnitude of Small Signal Current Gain Small Signal Current Gain Noise Figure
4123 MIN MAX 0.95 4.0 8.0 2.5 50 200 6.0
4124 MIN MAX 0.95 4.0 8.0 3.0 120 480 5.0
UNITS V pF pF
TEST CONDITIONS Ie = 50 rnA. 18 = 5.0 rnA Vee = 5.0 V. IE =0. f =100 kHz VE8 = 0.5 V. Ie = O. f = 100kHz Ie = 10 rnA. VeE = 20 V. f = 100 MHz Ie = 2.0 rnA. VeE = 10 V. f= 1.0 kHz
dB
Ie = 100!iA. VeE = 5.0 V. f = 10 Hz to 15.7 kHz. Rs = 1.0 kO
3-292
FAIRCHILD
2N412S/FTS04125 2N4126/FTS04126
VeEo ... -25 V (Min) (2N/FTS04126) hFE ... 120-360 @ 2.0 mA (2N/FTS04126) NF ... 4.0 dB (Max) Wide Band (2N/FTS04126) Complements ... 2N4123, 2N4124
TO-92 TO-92
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 70 C Ambient Temperature 25 C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VeBo Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current
-55 C to 1500 C 150C
I
FTSO 0.350 W' 4126 -25 V
-25 V -4.0 V 200 mA
2N 0.625 W 0.400 W 1.0 W 4125 -30 V

-30 V --4.0 V 200 mA

SYMBOL CHARACTERISTIC BVeEo BVeBo BVEBO lEBo leBo hFE
VCElsat)
4125 MIN MAX Collector to Emitter Breakdown -30 Voltage (Note 5) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Pulse Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) -30 -4.0 50 50 150 -0.4 -0.95
4126 MIN MAX -25 -25 --4.0 50 50 120 360 -0.4 -0.95
UNITS V V V nA nA V V
TEST CONDITIONS Ie = 1.0 mA, IB = 0 Ie = 10 J1.A, IE = 0 IE =10J1.A,le=0 VEB = -3.0 V, Ie = 0 VeB = -20 V, IE = 0 Ie = 2.0 mA, VeE = -1.0 V Ie = 50 mA, IB = 5.0 mA Ie = 50 mA, IB = 5.0 mA
VBElsatl
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (T0-92) junction-to-case thermal resistance of 1250 C/W (derating factor of 8.0 mW/o C); junction-to-ambient thermal resistance of 200" ClW (derating factor of 5.0 mWf' C); (TO-236) junction-to-ambient thermal resistance of 3570 CIW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current paint where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 !'5; duty cycle = 2%. 6. For product family characteristic curves, refer to Curve Set T215. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-293
2N4125/FTS04125 2N4126/FTS04126

SYMBOL CHARACTERISTIC Collector to Base Capacitance CCb Cib Ihfel hfe NF Input Capacitance Magnitude of Small Signal Current Gain Small Signal Current Gain Noise Figure 2.0 50 200 5.0 4125 MIN MAX 4.5 10 2.0 120 480 4.0 dB 4126 MIN MAX 4.5 10 UNITS pF pF TEST CONDITIONS VeB = -5.0 V, IE=O, f=1ookHz VEB = -0.5 V, Ie =0, f =1 00 kHz Ie = 10 mA, VeE = -20 V, f = 100 MHz Ie = 2.0 mA, VeE = -1.0 V, f = 1.0 kHz Ie = 100 !lA, VeE = -5.0 V, f = 10 Hz to 15.7 kHz, RG=1.0k!1
3-294
FAIRCHIL.D
2N420S/FTS0420S 2N4209/FTS04209
PNP Small Signal Ultra High Speed Satu rated Switches
VCEO ... 15 V (Min) (2N/FTS04209) VCE ... 0.18 V( Max)@ Ie = 10 mA (2N/FTS04209) TB." 20 ns (Max) Ion ... 15 ns (Max), toll ... 20 ns (Max) COb ... 3.0 pF (Max) Cb ... 3.5 pF (Max) IT ... 850 MHz (Min) (2N/FTS04209) Complement ... 2N2369A
TO-18 TO-18 TO-236AA/ AB TO-236AA/ AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Collector Current Ic 2N FTSO -65" C to 200" C-55 C to 150" C 200" C 150" C
2N 0.3W 0.7W 4208 -12 V -12 V -4.5 V 50mA
FTSO 0.350 W'
4209 -15 V -.15 V -4.5 V 50mA
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) 4208 SYMBOL CHARACTERISTIC MIN MAX Collector to Emitter Breakdown -12 BVcEs Voltage BVcBO BVEBO Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage -12 -4.5 4209 MIN MAX -15 -15 -4.5 UNITS V V V TEST CONDITIONS Ic = 100 J.LA, VBE = 0 Ic = 100 J.LA, IE = 0 IE = 100 J.LA, Ic = 0
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200" C and (TO-92) junction-to-case thermal resistance of 250" CIW (derating factor of 4.0 mW/' C); junction-to-ambient thermal resistance of 583' CIW (derating factor of 1.72 mW/' C); (TO-236) junclion-to-ambient thermal resistance of 357' CIW (derating factor of 2.8 mWI' C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length =300 /,s; duty cycle =1%. 6. For product family characteristic curves, refer to Curve Set T292. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-295
2N420S/FTS0420S 2N4209/FTS04209
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Collector Reverse Current ICES (Note 5) 4208 MIN MAX 10 5.0 5.0 hFE hFE DC Current Gain DC Pulse Current Gain (Note 5) 15 30 30 12 -12 --0.13 --0.15 --0.5 --0.8 --0.8 --0.95 -1.5 3.0 3.5 7.0 20 15 20 -0.8 120 35 50 4209 MIN MAX 10 UNITS nA nA p.A p.A TEST CONDITIONS VCE = -6.0 V, VCE = --8.0 V, VCE = -6.0 V, TA = 125C VCE = -8.0 V, TA = 125C VBE = 0 VBE = 0 VBE = 0, VBE = 0,
Ic = 1.0 rnA, VCE = --0.5 V 120 Ic = 10 rnA, VCE = --0.3 V Ic = 50 rnA, VCE = -1.0 V Ic = 10 rnA, VCE = --0.3 V, TA = -55C V --0.15 --0.18 --0.6 --0.8 -0.95 -1.5 3.0 3.5 8.5 20 15 20 ns ns ns V V V V V V pF pF Ic = 3.0 rnA, IB = 0 Ic = 1.0 rnA, IB = 0.1 rnA Ic = 10 rnA, IB = 1.0 rnA Ic = 50 rnA, IB = 5.0 rnA Ic = 1.0 rnA, IB = 0.1 rnA Ic = 10 rnA, IB = 1.0 rnA Ic = 50 rnA, IB = 5.0 rnA VCB = -5.0 V, IE = 0 VBE = --0.5 V, Ic = 0 Ic = 10 rnA, VCE = -10 V, f= 100 MHz Ic = 10 rnA, IB1 = IB2= 10mA, Vcc = -3.0 V Ic = 10 rnA, IB1 "" 1.0 rnA, Vcc = -1.5 V Ic = 10 rnA, IB1 = IB2 "" 1.0 rnA, Vcc = -1.5 V
4D
20 -15
VCEOlsusl VCElsatl VCElsati VBElsatl VBElsati Cob Cib hIe rs ton
Collector to Emitter Sustaining Voltage (Note 5) Collector to Emitter Saturation Voltage Pulsed Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage Pulsed Base to Emitter Saturation Voltage (Note 5) Output Capacitance Input Capacitance High Frequency Current Gain Charge Storage Time Constant (test circuit no. 234) Turn On Time (test circuit no. 348) Turn Off Time (test circuit no. 348)
ton
3-296
FAIRCHILO
2N4234/2N4235 2N4236
6 Watt PNP Power
VCEIsal) ... 0.6 V @ Ie = 1.0 A Complements ... 2N4237 through 2N4239
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Case Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Collector Current (Continuous) Ic Base Current (Continuous) IB
PACKAGE 2N4234 2N4235 2N4235
TO-39 TO-39 TO-39
-55 C to 200 C 200 C
5.0W 4234 -40 V -40 V -7.0 V 1.0 A 0.2A 4235 -50 V -50 V -7.0 V 1.0 A 0.2A 4236 -80 V -80 V -7.0 V 1.0 A 0.2A
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 3) SYMBOL CHARACTERISTIC lEBO ICBO Emitter Cutoff Current Collector Cutoff Current (2N4235) (2N4235) Collector Cutoff Current (2N4235) (2N4236) Collector Cutoff Current (2N4234) (2N4235) (2N4235) (2N4236) (2N4237) (2N4234) MIN MAX 500 100 100 100 1.0 1.0 1.0 100 1.0 100 1.0 100 1.0 UNITS p,A TEST CONDITIONS VEB = -7.0 V, Ic = 0 VCB = -40 V, IE = 0 VCB = -50 V, IE = 0 VCB = -80 V, IE = 0 VCE = -30 V, IB = 0 VCE = -40 V, IB = 01 VCE = -60 V, IB = 0 VCE = -40 V, VEB = -1.5 V VCE =-30V, VEB =-1.5V, Tc= 150C VCE = -60 V, VEB = -1.5 V VcE =-40V, VES =-1.5V, Tc =150C VCE = -80 V, VES = -1.5 V VCE =-60V, VEs =-1.5V, Tc=150C
p,A p,A p,A

mA mA mA
ICEO
(2N4235)
ICEX
(2N4234)
p,A mA p,A mA p,A mA
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200' C and junction-to-case thermal resistance of 33.3' C/W (derating factor of 34 mWI' C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length c 300 j.LS; duty cycle c 2%. 6. For product family characteristic curves, refer to Curve Set T414.
3-297
2N4234/2N4235 2N4236

SYMBOL CHARACTERISTIC hFE DC Pulse Current Gain (Note 5) MIN 40 30 20 10 MAX 150 UNITS Ic Ic Ic Ic V V V pF = = = = TEST CONDITIONS 100 mA, VCE = -1.0 V 250 mA, VCE = -1.0 V 500 mA, VCE = -1.0 V 1.0 A, VCE = -1.0 V
VCE(satl VSE(ONJ VSE(satl COb
Collector to Emitter Saturation Voltage Voltage (Note 5) Base to Emitter "On" Voltage Base to Emitter Saturation Voltage (Note 5) Output Capacitance Magnitude of Common Emitter Small Signal Current Gain Small Signal Current Gain 3.0 25
-0.6 -1.0 -1.5 100
Ic = 1.0 A, Is = 125 mA Ic = 250 mA, VCE = -1.0 V Ic = 1.0 A, Is = 100 mA Vcs = -10 V, IE = 0, f = 100 kHz Ic = 100 mA, VCE =-10V, f= 1.0MHz Ic = 50 mA, VCE = -10 V, f = 1.0 kHz
I hfel
hfe
3-298
F=AIRCHILD
2N4237/2N4238 2N4239
5 Watt NPN Power
VCElsatl ... 0.6 V @ Ic = 1.0 A Complements ... 2N4234 through 2N4236
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 2SoC Ambient Temperature 2So C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) Vceo Collector to Base Voltage VEeo Emitter to Base Voltage Collector Current Ic Base Current (Note 2) Ie
PACKAGE 2N4237 2N4238 2N4239
TO-39 TO-39 TO-39
-SSO C to 200 C 200C
0.8W S.OW 4237 40V SO V 6.0V 1.0 A O.S A 4238 60 V 80V 6.0 V 1.0 A O.SA 4239 80 V 100 V 6.0 V 1.0 A O.S A
ELECTRICAL CHARACTERISTICS (2S0C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC IEeo Iceo Emitter Cutoff Current Collector Cutoff Current (4238) (4239) Collector Cutoff Current (4238) (4239) Collector Cutoff Current (4237) (4238) (4238) (4239) (4239) (4237) MIN MAX O.S 0.1 0.1 0.1 1.0 1.0 1.0 0.1 1.0 0.1 0.1 0.1 0.1 (4237) 30 30 1S 1S0 UNITS mA mA mA mA mA mA mA mA mA mA mA mA mA VEe TEST CONDITIONS
IcEo
(4237)
ICEX
(4237)
hFE
DC Pulse Current Gain (Note S) (4238) (4239)
= 6.0 V, Ic = 0 Vce = SO V, IE = 0 Vce = 80 V, IE = 0 Vce = 100 V, IE = 0 VCE = 30 V, Ie = 0 VCE = 40 V, Ie = 0 VCE = 60 V, Ie = 0 VCE = SO V, VEe = 1.S V VCE = 30 V, VEe = 1.S V, Tc = 1S0C VCE = 80 V, VEe = 1.S V VCE = SO V, VEe = 1.S V, Tc = 1S0C VCE = 100 V, VEe = 1.S V VCE = 70 V, VEe = 1.S V, Tc = 1S0C Ic = 2S0 mA, VCE = 1.0 V Ic = SOO mA, VCE = 4.0 V Ic = 1.0 A, VCE = 1.0 V
3. 4. 5. 6.
These ratings give a maximum junction temperature of 200' C and junction-to-case thermal resistance of 35' C/W (derating factor of 28.5 mW/' C); junction-to-ambient thermal resistance of 218.8'C/W (derating factor of 4.5 mW/,C). Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length" 300 /lS; duty cycle" 2%. For product family characteristic curves, refer to Curve Set T315,
3-299
2N4237/2N4238 2N4239
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Collector to Emitter Saturation VCEIsall Voltage (Pulsed) (Note 4) V8EIONI V8EIsall COb Base to Emitter "On" Voltage (Pulsed) (Note 4) Base to Emitter Saturation Voltage (Pulsed) (Note 4) Output Capacitance Magnitude 01 Common Emitter Small Signal Current Gain Small Signal Current Gain 1.0 30 MIN MAX 0.6 0.3 1.0 1.5 100 UNITS V V V V pF Ic Ic TEST CONDITIONS
= 1.0 A, 18 = 100 mA = 500 mA, 18 = 50 mA Ic = 250 mA, VCE = 1.0 V = 1.0 A,

Ie
Ic
= 100 mA
VC8 Ic Ic
Ihlel
hie
= 10 V, Ic = 0,1 = 0.1 MHz = 100 mA, VCE = 10 V, 1 = 1.0 kH z = 100 mA, VCE = 10 V, 1 = 1.0 kH z
3-300
FAIRCHIL.O
2N4400/FTS04400 2N4401/FTS04401
Small Signal General Purpose Amplifiers & Switches
VCEO ... 40 V (Min) 100-300 @ 150 mA (2N/FTS04401); 40 (Min) @ 500 mA (2N/FTS04401) ton 35 ns (Max) @ 150 mA toll 255 ns (Max) @ 150 mA Complements ... 2N4402, 2N4403
hFE
TO-92 TO-92 TO-236AA/ AB TO-236AA/ AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 250 C Ambient Temperature 25" C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
-550 C to 150" C 150" C
I
FTSO 0.350 W'
2N 0.625 W 1.0W
40V 60V 6.0 V 600 mA
SYMBOL CHARACTERISTIC BVcEo(sUS' BVcBO BVEBo ICEx IBL Collector to Emitter Sustaining Voltage (Note 5) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Base Reverse Current
4400 MIN MAX 40 60 6.0 100 100
4401 MIN MAX 40 60 6.0 100 100
UNITS V V V nA nA Ic Ic IE
TEST CONDITIONS
= 1.0 mA, = 100 /lA, = 100 /lA,
IB IE Ic
=0 =0 =0
VCE VCE
= 35 V, VEB = 0.4 V = 35 V, VEB = 0.4 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (10-92) junction-to-case thermal resistance of 125C/W (derating factor of 8.0 mW;o C); junction-to-ambient thermal resistance of 200" CIW (derating factor of 5.0 mW/o C); (T0-236) junction-to-ambient thermal resistance of 357 0 CIW (derating factor of 2.8 mW;o C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ps; duty cycle';; 2%. 6. For product family characteristic curves, refer to Curve Set 1145. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-301
2N4400/FTS04400 2N4401/FTS04401

SYMBOL CHARACTERISTIC DC Current Gain hFE 4400 MIN MAX 20 40 hFE VeECsatl VSECsatl CCb Cab hIe hie hoe hre DC Pulse Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Emitter to Base Capacitance Small Signal Current Gain Input Impedance Output Admittance Voltage Feedback Ratio Current Gain Bandwidth Product Turn On Delay Time (test circuit no. 559) Rise Time (test circuit no. 559) . Storage Time (test circuit no. 560) Fall Time (test circuit no. 560) 20 0.5 1.0 0.1 200 15 20 225 .30 0.75 50 20 150 0.4 0.75 0.95 1.2 6.5 30 250 7.5 30 8.0 40 1.0 1.0 0.1 250 15 20 225 0.75 4401 MIN MAX 20 40 80 100 40 300 0.4 0.75 0.95 1.2 6.5 V V V V pF pF UNITS TEST CONDITIONS Ie = 100 pA, VeE = 1.0 V Ie = 1.0 mA, VeE = 1.0 V Ie = 10 mA, VeE = 1.0 V Ie = 150 mA, VeE = 1.0 V Ie = 500 mA, VeE = 2.0 V Ie = 150 mA, Is = 15 mA Ie = 500 mA, Is = 50 mA Ie = 150 mA, Is = 15 mA Ie = 500 mA, Is = 50 mA
Vee =5.0 V, IE =0, f= 100 kHz

VSE =0.5 V, Ie =0, f= 100 kHz Ie = 1.0 mA, VeE = 10 V, f=1.0kHz
30
500 15
kO
~mhos
Ie = 1.0 mA, VeE = 10 V, f=1.0kHz Ie = 1.0 mA, VeE = 10 V, f= 1.0 kHz Ie = 1.0 mA, Vee = 10 V, f= 1.0 kHz Ie = 20 mA, VeE = 10 V, f = 100 MHz Ie = 150 mA, Vee = 30 V, lSI = 15 mA Ie = 150 mA, Vee = 30 V, lSI = 15 mA Ie = 150 mA, Vee = 30 V, lSI = IS2 = 15 mA Ie = 150 mA, Vee = 30 V, lSI = IS2 = 15 mA
30
8.0
x1().4 MHz ns ns ns ns
IT
tt
tr
to
tl
30
3-302
FAIRCHIL.O
, 2N4402/FTS04402 2N4403/FTS04403
Vceo ... -40 V (Min) 100-300 @ 150 mA (2N/FTS04403), 20 (Min) @ 500 mA (2N/FTS04403) ton 35 ns (Max) @ 150 mA toff 255 ns (Max) @ 150 mA Complements ... 2N4400, 2N4401
hFE
-55 C to 1500 C 150C
I
FTSO 0.350 W*
2N 0.625 W 1.0W
-40 V -40 V -5.0 V 600 rnA
SYMBOL CHARACTERISTIC BVCEOlsusl Collector to Emitter Sustaining Voltage (Note 5) BVcBo BVEBO IcEx IBL Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Reverse Current Base Reverse Current
4402 MIN MAX -40 -40 -5.0 100 100
4403 MIN MAX -40 -40 -5.0 100 100
UNITS V V V nA nA
TEST CONDITIONS Ic Ic IE
= 1.0 rnA, = 100 /LA, = 100 /LA,
IB IE Ic
=0 =0 =0
VCE VCE
= -35 V, VEB = -0.4 V = -35 V, VEB = -0.4 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (TO-92) junction-to-case thermal resistance of 1250 ClW (derating factor of 8.0 mWrC); junction-to-ambient thermal resistance of 200"C/W (derating factor of 5.0 mWrC); (TO-236) junction-to-ambient thermal resistance of 3570 CIW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length; 300 ~s; duty cycle < 2%. 6. For product family ~haracteristic curves. refer to Curve Set T212. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-303
2N4402/FTS04402 2N4403/FTS04403
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC DC Current Gain hFE 4402 MIN MAX 30 50 hFE VeElsati V8EIsati CCb Ceb h'e hie hoe h,e DC Pulse Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Emitter to Base Capacitance Small Signal Current Gain Input Impedance Output Admittance Voltage Feedback Ratio 30 0.75 1.0 0.1 50 20 150 -0.4 -0.75 4403 MIN MAX 30 60 100 100 20 300 -0.4 -0.75 V V V V pF pF UNITS TEST CONDITIONS Ie = 100 ,.,.A, Vee = 1.0 V Ie = 1.0 mA, VeE = -1.0 V Ie = 10 mA, Vee = -1.0 V Ie = 150 mA, Vee = -2.0 V Ie = 500 mA, VeE = -2.0 V Ie = 150 mA, 18 = 15 mA Ie = 500 mA, 18 = 50 mA Ie = 150 mA, 18 = 15 mA Ie = 500 mA, 18 = 50 mA Ve8 =-1 OV, IE=O, f=140kHz VE8 =-0.5 V, le=O, f=140kHz Ie = 1.0 mA, VeE =-10 V, f = 1.0 kHz k!l ,.,.mhos X1Q-4 MHz 15 20 225 ns ns ns ns Ie = 1.0 mA, VeE = -10 V, f = 1.0 kHz Ie = 1.0 mA, Vee = -10 V, f = 1.0 kHz Ie = 1.0 mA, VeE = -10 V, f= 1.0 kHz Ie = 20 mA, Vee = -10 V, f = 100 MHz Ie = 150 mA, Vee = -30 V, 181 = 15 mA Ie = 150 mA, Vee = -30 V, 181 = 15 mA Ie = 150 mA, Vee = -30 V, 181 = 182 = 15 mA Ie = 150 mA, Vee = -30 V, 181 = 182 = 15 mA
-0.75 -0.95 -0.75 -0.95 -1.3 -1.3 8.5 30 250 7.5 100 8.0 60 1.5 1.0 0.1 200 15 20 225 30 8.5 30 500 15 100 8.0
h
lei
t,
Current Gain Bandwidth Product 150 Turn On Delay Time (test circuit no. 557) Rise Time (test circuit no. 557) Storage Time (test circuit no. 558) Fall Time (test circuit no. 558)
to
t,
30
3-304
FAIRCHILD
2N4409/FTS04409 2N4410/FTS04410
NPN Neon Display Tube Drivers
VCEO ... 80 V (Min) (2N/FTS04410) hFE ... 60 V (Min) @ 1.0 and 10 mA Complements ... MPSA55, MPSA56
TO-92 TO-92
-55 to 150' C 150C
2N 0.625 W 1.0 W 4409 50 V SO V 5.0 V 250 mA
FTSO 0.350 W*
4410 SOV 120 V 5.0 V 250 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVcEo BVcEx BVcBo BVEBO lEBo CHARACTERISTIC Collector to Emitter Breakdown Voltage Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current 4409 MIN MAX 50 SO SO 5.0 100 4410 MIN MAX SO 120 120 5.0 100 UNITS V V V V nA Ic TEST CONDITIONS
= 1.0 mA,
IB
=0 = -5.0 V,
Ie = 500 !lA, VBB RBE = S.2 kO Ic IE
= 10 !lA, = 10 !lA, = 4.0 V,
IE Ic Ic
=0 =0 =0
VEB
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (TO92) junction-to-case thermal resistance of 1250 C/W (derating factor of 8.0 mW/o C); junction-to-ambient thermal resistance of 200" C/W (derating factor of 5.0 mW/o C); (TO-236) junction-to-ambient thermal resistance of
4. 5. 6. 3570 C/W (derating factor of 2.8 mW;o C). Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length 0 300 MS; duty cycle 01%. For product family characteristic curves. refer to Curve Set T147. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-305
2N4409/FTS04409 2N4410/FTS04410

SYMBOL CHARACTERISTIC ICBo Collector Cutoff Current 4409 MIN MAX 10 10 1.0 1.0 hFE hFE
VeElsat)
4410 MIN MAX
UNITS nA nA JJ.A JJ.A
TEST CONDITIONS VCB = 60 V, IE = 0 VCB = 100 V, IE = 0 Vce =60V, IE =0, TA = 100C Vce = 100V,IE=O, TA=10ao C Ic = 1.0 mA, VCE = 1.0 V Ic = 10 mA, VCE = 1.0 V
DC Current Gain DC Pulse Current Gain (Note 5) Collector to Emitter Saturation Voltage Base to Emitter "On" Voltage
60 60 400 0.2 0.8
60 60 400 0.2 0.8 0.8 V V V pF pF
Ic = 1.0 mA, IB = 0.1 mA Ic = 1.0 mA, VCE = 5.0 V Ic = 1.0 mA, Ie = 0.1 mA Vce = 10V,IE =0, f=140kHz
VeE(ONI VeE(satl
Base to Emitter Saturation 0.8 Voltage - - - - -1--- - - - - - - - - - - - f- - - -- - - - Collector to Base Capacitance 12 Ccb Cob Emitter to Base Capacitance Magnitude of Common Emitter Small Signal Current Gain 2.0 50 10 2.0
--- 12 50 10
--- - ----
---- ----
VEB = 0.5 V, Ic = 0, f = 100 kHz Ic=10mA,VcE =10V, f = 30 MHz
I hlel
3-306
FAIRCHILD
2N4896
NPN Power
VCElsatl ... 0.7 V @ Ic = 2.0 A Low Leakage ... ICES IMaxi /.1100 /.IA @ Tc = 150C
PACKAGE 2N4896
TO-39
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures -65C to 200C Storage Temperature Operating Junction Temperature 200C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25C Case Temperature 100 C Case Temperature Voltages 8. Currents VeEo Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current IB Base Current
0.8W 4.0W
60V 120 V 6.0 V 5.0A 1.0 A
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 7) SYMBOL CHARACTERISTIC iEBo Emitter Cutoff Current ICES Collector Cutoff Current MIN MAX 1.0 1.0 0.1 1.0 1.0 100 35 300 V 1.0 1.6 V V UNITS /.I A mA mA mA /.I A TEST CONDITiONS VEB = 4.0 V, IE = 0 VEB = 6.0 V, Ic = 0 VCE = 60 V, VBE = 0, TA = 1500C VCE=120V,VBE=0 VeE = 60 V, VBE = 0 Ic = 2.0 A, VCE = 2.0 V Ic = 2.0 A, VCE = 2.0 V, TA = -55C Ic = 50 mA, Ie = 0 ic = 5.0 mA, Ie = 0.5 A Ic = 5.0 mA, Ie = 0.5 A
hFE VCEOlsusi VCElsati VeE.sati
DC Current Gain (Note 5) Collector to Emitter Sustaining Voltage (Notes 4 & 5) Collector to Emitter Saturation Voltage (Notes 5 & 6)) Base to Emitter Saturation Voltage (Notes 5 & 6)
60
NOTES: I. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200"C and junction-to-case thermal resistance of 25"CIW (derating factor of 40 mW/" C); junction-to-ambient thermal resistance of 219"C/W (derating factor of 4.57 mW/" C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length =300 /,s; duty cycle = 1%. 6. Point of measurement: 1/4" from header. 7. For product family characteristic curves. refer to Curve Set T145.
3-307
2N4896
ELECTRICAL CHARACTERISTICS (25 0 C Ambient Temperature unless otherwise noted) (Note 7) SYMBOL CHARACTERISTIC Cob Cib Output Capacitance Input Capacitance Magnitude of Common Emitter Small Signal Current Gain Turn On Delay Time Rise Time Storage Time Fall Time MIN MAX
80 500 4.0 50 300 350 300
UNITS pF pF
TEST CONDITIONS
Ihlel
td t, t. tl
= 10 V, IE = 0, f = 0.14 MHz VEB = 0.5 V, Ie = 0, f = 0.14 MHz Ie = 0.5 A, VeE = 5.0 V, f = 20 MHz
VeB
ns ns ns ns
= 5.0 A, = 5.0 A, Ie = 5.0 A, Ie = 5.0 A,

Ie Ie
IB1 IB1 IB1 IB1
= 0.5 A = 0.5 A = IB2 = 0.5 A = IB2 = 0.5 A
3-308
FAIRCHILD
2N5086/FTS05086 2N5087/FTS05087
PNP Low Level Low Noise High Gain Amplifiers
VCEO ... -50 V (Min) hFE ... 250 (Min) from 100 J1.A to 10 mA (2N/FTS05087) NF ... 2.0 dB (Max) Wide Band and 1.0 kHz (2N/FTS05087) Complements ... 2N5209, 2N5210
TO-92 TO-92 TO-236AAI AB TO-236AA/ AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 70 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Collector Current (Peak) Ic Collector Current (Continuous) Ic
2N 1.0 W 0.400 W 0.625 W
FTSO 0.350 W*
UNITS V V 50 10 50 nA nA nA TEST CONDITIONS Ic = 1.0 mA, IB = 0 Ic = 100 J1.A, IE = 0 VEB = -3.0 V, Ic = 0 VCB = -10 V, IE = 0 VCB = -35 V, IE = 0 Ic = 100 J1.A, VCE = -5.0 V Ic = 1.0 mA, VeE = -5.0 V Ic = 10 mA, VCE = -5.0 V
-50 V -50 V -3.0 V 100 mA 50 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVCEO(satl BVcBo lEBo ICBO hFE hFE 5086 MIN MAX 5087 MIN MAX -50 -50 50 10 50 150 150 150 500 250 250 250
Collector to Emitter Breakdown -50 Voltage Collector to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain DC Pulse Current Gain (Note 5) -50
800
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations
3.
4. 5. 6.
These ratings give a maximum junction temperature of 150" C and (TO-92) junction-to-case thermal resistance of 125" C/W (derating factor of 8.0 mWI" C); junction-to-ambient thermal resistance of 200" C/W (derating factor of 5.0 mWI" C); (TO-236) junction-to-ambient thermal resistance of 357" CIW (derating factor of 2.8 mW/" C). Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length = 300 I'S; duty cycle = 1%. For product family characteristic curves, refer to Curve Set T219. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-309
2N5086/FTS05086 2N5087/FTS05087
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Collector to Emitter Saturation VCEIsatl Voltage (Note 5) VSE1O N) Ccb hie Base to Emitter "On" Voltage (Note. 5) Output Capacitance Small Signal Current Gain Current Gain Bandwidth Product Noise Figure 150 40 3.0 3.0 5086 MIN MAX -D.3 -0.85 4.0 600 250 40 2.0 2.0 5087 MIN MAX -D.3 -0.85 4.0 900 MHz dB dB UNITS V V pF TEST CONDITIONS Ic = 10 mA, Is = 1.0 mA Ic = 1.0 mA, VCE = -5.0 V Vcs = -5.0V,IE =0, f=100kHz Ic = 1.0 mA, VCE = -5.0 V, f = 1.0 kHz Ic = 500 J,LA, VCE = --5.0 V, f= 20 MHz Ic = 20 J,LA, VCE = -5.0 V, f = 10 to 15.7 kHz, Rs = 10 kf1 Ic = 100 J,LA, VCE = -5.0 V, f = 1.0 kHz, Rs = 3.0 kf1
h
NF
3-310
FAIRCHILD
2N5088/FTS05088 2N5089/FTS05089
NPN Low Level Low Noise High Gain Amplifiers
Veeo ... 25 V (Min) (2N/FTS05089) hFE ... 400 (Min) from 100 p.A to 10 mA (2N/FTS05089) NF ... 2.0 dB (Max) Wide Band Complements ... 2N5086, 2N5087
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VeBo Collector to Base Voltage VEBO Emitter to Base Voltage Collector Current Ie
-55 C to 150 C 150C
2N 0.625 W 1.0 W 5088 30V
FTSO 0.350 W'
5089 25 V
35V 4.5 V 50 mA
30V 4.5 V 50mA
SYMBOL CHARACTERISTIC BVeEolSuSI BVcBO lEBo ICBO hFE Collector to Emitter Sustaining Voltage Collector to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain (Note 5)
5086 MIN MAX 30 35 50 100 50
5087 MIN MAX 25 30
UNITS V V Ie Ie
TEST CONDITIONS
= 1.0 mA, = 100 ~A,
IE IE
=0 =0
50
100 , 50
nA nA nA nA
300 350 300
900
400 450 400
1200
= 3.0 V, Ic = 0 = 4.5 V, Ic = 0 'VCB = 20 V, IE = 0 VCB = 15 V, IE = 0 Ic = 100 ~A, VCE = 5.0 V Ic = 1.0 mA, VCE = 5.0 V Ic = 10 mA, Vee = 5.0 V
VEB VEB
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-to-case thermal resistance of 1250 CfW (derating factor of 8.0 mW/O C); iunction-to-ambient thermal resistance of 200" ClW (derating factor of 5.0 mW/O C); (TO-236) junction-to-ambient thermal resistance of 357 0 CfW (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T155. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-311
2N5088/FTS05088 2N5089/FTS05089

SYMBOL CHARACTERISTIC Collector to Emitter Saturation VCElsati Voltage (Note 5) VeEION) CCb Ceb hie Base to Emitter "On" Voltage (Note 5) Collector to Base Capacitance Emitter to Base Capacitance Small Signal Current Gain Current Gain Bandwidth Product Product Noise Figure 350 5086 MIN MAX 0.5 0.8 4.0 10 1400 450 50 3.0 2.0 5087 MIN MAX 0.5 0.8 4.0 10 1800 MHz dB UNITS V V pF pF TEST CONDITIONS Ic = 10 mA, Ie = 1.0 mA1 Ic = 10 mA, VCE = 5.0 V Vce =5.0 V,IE =0, f = 100 kHz VeE =0.5 V, Ic =0, f = 100 kHz Ic = 1:0 mA, VCE = 5.0 V, f=1.0kHz Ic = 500 pA., VCE = 5.0 V, f=20MHz Ic = 100 p,A, VCE = 5.0 V, Rs = 10 kil, f = 10 Hz to 15.7 kHz
h
NF
50
3-312
FAIRCHILD
2N5209/FTS05209 2N5210/FTOS5210
NPN Low Level Low Noise High Gain Amplifiers
VeEo ... 50 V (Min) hFE ... 200 (Min) @ 100 J.lA, 250 (Min) @ 1.0 mA and 10 mA (2N5210) NF ... 2.0 dB (Max) Wide Band (2N5210) Complement ... 2N5086, 2N5087
PACKAGE 2N5209 2N521 0 FTS05209 FTS05210
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VeEo Collector to Emitter Voltage (Note 4) VeBO Collector to Base Voltage VEBO Emitter to Base Voltage Ie Collector Current
-55C to 150C 150C
I
FTSO 0.350 W'
2N 0.625 W 1.0W
50V 50 V 4.5 V 50mA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) 5209 SYMBOL CHARACTERISTIC MIN MAX Collector to Emitter Breakdown 50 BVeEo Voltage BVeBo lEBO Collector to Base Breakdown Voltage Emitter Cutoff Current 50 50 100 5210 MIN MAX 50 50 50 100 UNITS V V nA nA TEST CONDITIONS Ie Ie
= 1.0 mA, = 100 J.lA, = 3.0 V, = 4.5 V,
IB IE Ie Ie
=0 =0 =0 =0
VEB VEB
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-to-case thermal resistance of 1250 C/W (derating factor of 8.0 mW/o C); junction-to-ambient thermal resistance of 200" C/W (derating factor of 5.0 mW/o C); (TO-236) junction-to-ambient thermal resistance of 3570 C/W (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length; 300 I'S; duty cycle < 2%. 6. For product family characteristic curves, refer to Curve Set T155. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3313
2N5209/FTS05209 2N5210/FTOS5210

SYMBOL CHARACTERISTIC ICBo hFE Collector Cutoff Current DC Current Gain (Note 5) 100 150 150 5209 MIN MAX 50 10 300 200 250 250 5210 MIN MAX 50 10 600 UNITS nA nA VCB VCB TEST CONDITIONS
= 35 V, IE = 0 = 10 V, IE = 0 Ic = 100 p,A, VCE = 5.0 V

Ic = 1.0 rnA, VCE = 5.0 V Ic = 10 rnA, VCE = 5.0 V Ic = 10 rnA, IB = 1.0 rnA
VCElsati VBE1O N) CCb hIe
Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage Collector to Base Capacitance Small Signal Current Gain Current Gain Bandwidth Product Noise Figure 150 30
'-
0.7 0.85 4.0 600 250 30 3.0 4.0

'-
0.7 0.85 4.0 900
V V pF
Ic;: 1.0 rnA, VCE;: 5.0 V VCB =5.0 V, IE =0, f= 100 kHz Ic = 1.0 rnA, VCE = 5.0 V, f = 1.0 kHz
h
NF
MHz 2.0 3.0 dB dB
Ic = 500 p,A, VCE = 5.0 V, f = 20 MHz Ic = 20 p,A, VCE = 5.0 V,
'Rs = 22 k!l, f=10Hzt015.7kHz

Ic ;: 20 p,A, VCE = 5.0 V, Rs = 10 k!l, f = 1.0 kHz
3-314
FAIRCHILD
2N5220/FTS05220
NPN Small Signal General Purpose Complementary Amplifiers
VCEO ... 15 V (Min) hFE ... 30-600 @ 50 mA VCElsatl ... 0.5 V (max) @ 150 mA
PACKAGE
2N5220 FTS05220 T092-1 TO-236AAI AB


2N
0.625 W 1.0W
FTSO
0.350 W*
UNITS V V V nA nA Ic TEST CONDITIONS
Voltages & Currents

VCEO VCBO VEBO Ie Collector to Emitter Voltage (Note 4) Collector to Base Voltage Emitter to Base Voltage Collector Current 15 V
15 V 3.0 V 500 mA ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL BVcEo BVcBo BVEBo lEBo ICBO hFE VCElsatl VBElsatl CCb h'e CHARACTERISTIC Collector to Emitter Breakdown Voltage (Note 5) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Small Signal Current Gain Current Gain Bandwidth Product 30 100 25 30 MIN 15 15 3.0 100 100 600 0.5 1.1 10 1800 MHz V V pF MAX
= 10 mA,
IB
=0
Ic=100p,A,IE=0 IE = 100 p,A, Ie = 0 VEB = 3.0 V, Ic = 0 VCB = 10 V, IE = 0 Ie = 10 mA, VCE = 10 V Ic = 50 mA, VCE = 10 V Ic
= 150 mA,
IB = 15 mA
Ic = 150 mA, IB = 15 mA VCB = 5.0 V, IE = 0, f = 1.0 MHz Ie = 50 mA, VeE = 10 V, f = 1.0 kHz Ic = 20 mA, VCE
h
2.
= 10 V
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3.
4. 5. 6.
These ratings give a maximum junction temperature of 150C and (TO-92) junction-to-case thermal resistance of 1250 CIW (derating factor of 8.0 mW/ o C); junction-to-ambient thermal resistance of 200 0 CIW (derating factor of 5.0 mW/ o C); (TO-236) junction-to-ambient thermal resistance of 357 0 CIW (derating factor of 2.8 mW/o C). Rating refers to a high current point where collector to emitter voltage is lowest. Pulse conditions: length = 300 pS; duty cycle < 2%. For product family characteristic curves, refer to Curve Set T145.
Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-315
FAIRCHILD
2N5223/FTS05223
NPN Small Signal General Purpose Amplifier & Oscillator
Po ... 625 mW@ TA = 25C VCEO ... 20 V (Min) hFE... 50-800 @ 2.0 mA iT .. 150 MHz (Min) @ 10 mA CCb 4.0 pF (Max) Complement ... 2N/FTS05227
TO-92
TO-236AAI AB
Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current
-55 C to 150 C 150C
2N 0.625 W 1.0 W
FTSO 0.350 W'
20V 25 V 3.0V 100 mA
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC MIN Collector to Emitter Breakdown Voltage 20 BVcEo BVcBO BVEBO lEBO ICBO hFE Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain 50 25 3.0 500 100 800 MAX UNITS V V V nA nA TEST CONDITIONS
= 1.0 mA, IB = 0 Ic = 100 p.A, IE = 0 IE = 100 p.A, Ic = 0 VEB = 2.0 V, Ic = 0 VCB = 10 V, IE = 0 Ic = 2.0 mA, VCE = 10 V
Ic
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-to-case thermal resistance of 1250 C/W (derating factor of 8.0 mW/ o C); junction-to-ambient thermal resistance of 2000 C/W (derating factor of 5.0 mW/o C); (TO-236) j unction-to-ambient thermal. resistance of 357 0 CIW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S; duty cycle < 2%. 6. For product family characteristic curves, refer to Curve Set T144. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-316
2N5223/FTS05223

SYMBOL CHARACTERISTIC MIN Collector to Emitter Saturation Voltage VCElsatl (Note 5) VeElsatl CCb hIe Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Small Signal Current Gain Current Gain Bandwidth Product 50 150 MAX 0.7 1.2 4.0 1600 MHz UNITS V V pF TEST CONDITIONS Ic = 10 rnA, Ie = 1.0 rnA Ic = 10 rnA, Ie = 1.0 rnA Vce = 10 V, IE = 0, f = 1.0 MHz Ic = 2.0 rnA, VCE = 10V, f= 1.0 kHz Ic = 10 rnA, VCE = 10 V, f = 100 MHz
3-317
F=AIRCHILO
2N5224/FTS 05224
NPN Low Level Switch
ton ... toll ...
VCEO ... 12 V (Min) 45 ns (Max) @ 10 mA 60 ns (Max) @ 10 mA h ... 250 MHz (Min) @ 10 mA CCb 4.0 pF (Max) Complement ... MPSL08
TO-92 TO-236AAIAB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25C Gase Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic DC Co "ector Current
2N 0.625 W 1.0W
FTSO 0.350 W'
12 V 25V 5.0V 100 mA
SYMBOL CHARACTERISTIC BVCEO BVcBO BVEBO IEao ICBO hFE VCEIsatl VaEIsatl Collector to Emitter Breakdown Voltage (Note 5) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5)
MIN 12 25 5.0
MAX
UNITS V V V
TEST CONDITIONS Ic = 10 mA, IB = 0
100 500 40 15 400 0.35 0.9
itA nA
=0 Ic = 0 VEB = 4.0 V, Ic = 0 VCB = 15 V, IE = 0

Ic IE Ic = 10 rnA, VCE = 1.0 V Ic = 100 mA, VCE = 1.0 V Ic Ic
= 100 JJA, IE = 100 itA,
V V
= 10 rnA, = 10 mA,
la la
= 3.0 mA = 3.0 mA
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150"C and (T0-92) junction-to-case thermal resistance of 125C/W (derating factor of 8.0 mWfOC); junction-to-ambient thermal resistance of 2OQC/W (derating factor of 5.0 mW/C); (TO-236) junction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/o C). 4. Rating refers to a high current pOint where collector to emitter voltage is lowest. 5. Pulse conditions: length =300 1'8; duty cycle < 2%. 6. For product family characteristic curves, refer to Curve Set T162. PaCkaQ9 mounted on .99.5% alumina 8 mm x 8 mm x 0.6 "lm.
3-318
2N5224/FTS05224
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Collector to Base Capacitance Ccb MIN 250 25 20 35 25 MAX 4.0 UNITS pF MHz ns ns ns ns TEST CONDITIONS VeB = 5.0 V, IE = 0, f = 1.0 MHz le= 10 rnA, VeE = 10V, f= 100 MHz Ie = 10 rnA, Vee = 3.0V, IB1 =3.0mA le= 10 rnA, Vee=3.0V, IB1 =3.0mA Ie = 10 rnA, Vee = 3.0 V, IB1 = IB2 = 3.0 rnA Ie = 10 rnA, Vee = 3.0 V, IB1 = IB2 = 3.0 rnA
h
td tr t. tf
Current Gain Bandwidth Product Delay Time (test circuit no. 531) Rise Time (test circuit no. 531) Storage Time (test circuit no. 531) Fall Time (test circuit no. 531)
3-319
F=AIRCHILD
2N5225/FTS05225 2N5226/FTOS5226
VCEO ... 25 V (Min) hFE... 30-600 @ 50 mA VCElsatl ... 0.8 V (Max) @ 100 mA Complement ... 2N5225 (NPN). 2N5226 (PNP)
TO-92 TO-92 TO-236AA/ AB TO-236AAI AB
-550 C to 1500 C 1500 C
2N 0.625 W 1.0W 5225 25 V 25 V 4.0 V 500 mA
FTSO 0.350 W'
5226 -25 V -25 V -4.0 V 500 mA
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) 2N5225 SYMBOL CHARACTERISTIC MIN MAX Collector to Emitter Breakdown 25 BVcEo Voltage BVcBo BVEBO lEBo ICBO hFE Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain (Note 5) 25 30 25 4.0 500 300 600 25 30 2N5226 MIN MAX -25 -25 -4.0 500 300 600 UNITS V V V nA nA TEST CONDITIONS Ic = 10 mA, IB = 0
Ic=100~,IE=O
IE =
100~,
Ic = 0
VEB = 4.0 V, Ic = 0 VCB=15V,IE=0 Ic = 10 p.A, VCE = 10 V Ic = 50 mA, VCE = 10 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150' C and (TO-92) junction-to-case thermal resistance of 125' CIW (derating factor of 8.0 mW/'C); junction-to-ambient thermal resistance of 200'C/W (derating factor of 5.0 mW/' C); (TO-236) junction-to-ambient thermal resistance of 357' CIW (derating factor of 2.8 mW/' C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length =300 1"'; duty cycle = 2%. 6. For product family characteristic curves, refer to Curve Set T145 for 2N5225 and T212 for 2N5226. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-320
2N5225/FTS05225 2N5226/FTOS5226
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC Collector to Emitter Saturation VeEls.tI Voltage (Note 5) VBElsatl Ccb h,. Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Small Signal Current Gain Current Gain Bandwidth Product 30 2N5225 MIN MAX 0.8 1.0 20 1800 50 30 2N5226 MIN MAX -0.8 -1.0 20 1800 50 MHz UNITS V V pF TEST CONDITIONS Ie = 100 rnA, IB = 10 rnA Ie = 100 rnA, IB = 10 rnA VeB =5.0 V, IE =0, f = 1.0 MHz Ie = 50 rnA, VeE = 10 V, f = 1.0 kHz Ie = 20 rnA, VeE = 10 V, f = 20 MHz
3-321
FAIRCHILD
2N5227/FTS05227
PNP Small Signal General Purpose Amplifier & Oscillator
VCEO ... 30 V (Min) hFE ... 50-700 @ 2.0 mA It ... 100 MHz (Min) @ 10 mA Ccb . 5.0 pF (Max) Complements ... 2NS223
PACKAGES 2N5227 TO-92 FTS05227 TO-236AAIAB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures -55C to 150C Storage Temperature 150C Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Co "ector Current
2N 0.625 W 1.0W
FTSO 0.350 W'
-30 V -30 V -3.0 V SOmA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC MIN Collector to Emitter Breakdown Voltage -30 BVCEO BVcBo BVEBo lEBO ICBO hFE VCEI!) VBEI!) CCb h,. Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain (Note 5) Collector to Emitter Saturation Voltage Base to Emitter Saturation Voltage Collector to Base Capacitance Sma" Signal Current Gain Current Gain Bandwidth Product 50 100 30 50 -30 -3.0 500 100 700 MAX UNITS V V V nA nA TEST CONDITIONS Ic = 1.0 mA, IB = 0 Ic = 100 pA, IE = 0 IE = 100 pA, Ic = 0 VEB = -2.0 V, Ic = 0 VCB = -10 V, IE = 0 Ic = 100 /LA, VCE = -10 V Ic = 2.0 mA, VCE = -10 V V V pF MHz Ic = 10 mA, IB = 1.0 mA Ic = 10 mA, IB = 1.0 mA VeB = 10 V, IE = 0, f = 1.0 MHz Ic= 2.0 mA, VCE=-10V, f=1.0kHz Ic= 10 mA, VCE =-10V, f= 100MHz
-0.4
-1.0 5.0 1500
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150 C and (TO-92) junction-to-case thermal resistance of 125 CIW (derating factor of 8.0 mW/oC); iunction-to-ambient thermal resistance of 200CIW (derating factor of 5.0 mW/oC); (TO-236) junction-to-ambient thermal resistance of 357 CIW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowes!. 5. Pulse conditions: length = 300 1"'; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T215. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-322
FAIRCHILD
A. Sehlumberger Company
2N5228/FTS05228
PNP Low Level Switch
VCEO .. -5.0 V (Min)
Ion ... 75 ns (Max) @ 10 mA
loll ... 140 ns (Max) @ 10 mA IT ... 300 MHz (Min) @ 10 mA Ccb ... 5.0 pF (Max)
Complement ... 2N5224
TO-92 TO-236AAI AB
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCES Collector to Emitter Voltage VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic DC Collector Current
-55 C to 150 C 150C
2N 0.625 W 1.0 W
FTSO 0.350 W'
UNITS V V V V Ie Ie
-6.0 V -5.0 V -5.0 V -3.0 V 50mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 5) SYMBOL CHARACTERISTIC MIN Collector to Emitter Breakdown Voltage -5.0 BVCEO (Note 4) BVeEs BVCBO BVEBo ICES lEBo hFE Collector to Emitter Breakdown Voltage -6.0 Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain (Note 4) 30 15 --5.0 -3.0 100 100 MAX
= 10 mA,
TEST CONDITIONS IB = 0
nA ,.,.A
= 100 ,.,.A, VBE = 0 = 100,.,.A, IE = 0 IE = 100 ,.,.A, Ie = 0 VCE = -4.0 V, VBE = 0 VEB = -2.5 V, Ie = 0 Ic = 10 mA, VeE = -0.3 V Ie = 50 mA, VCE = -1.0 V
Ic
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150Cand (TO-92) junction-to-case thermal resistance of 125C/W (derating factor of 8.0 mW/o C): junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/o C): (TO-236) j unction-to-ambient thermal resistance of 357 C/W (derating factor of 2.8 mW/o C). 4. Pulse conditions: length = 300 !AS: duty cycle' 2%. 5. For product family characteristic curves. refer to Curve Set T292. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-323
2N5228/FTS05228
SYMBOL CHARACTERISTIC VeElsatl VBE1 tI Ccb fT td t, t. tf Collector to Emitter Saturation Voltage (Note 4) Base to Emitter Saturation Voltage (Note 4) Collector to Base Capacitance Current Gain Bandwidth Product Delay Time (test circuit no. 532) Rise Time (test circuit no. 532) Storage Time (test circuit no. 532) Fall Time (test circuit no. 532)
MIN
MAX -0.4
UNITS TEST CONDITIONS V Ie = 10 mA, IB = 3.0 mA V pF MHz ns ns ns ns Ie = 10 mA, IB = 3.0 mA VeB = -5.0 V, IE = 0, f = 1.0 MHz le= 10 mA, VeE =-5.0V, f=100MHz Ie = 10 mA, Vee = -3.0 V, IBt =3.0 mA le=10mA, Vee=-3.0V, IBt =3.0mA Ie = 10 mA, Vee = -3.0 V, IBI = -IB2 = 3.0 mA Ie = 10 mA, Vee = -3.0 V, IBI = -IB2 = 3.0 mA
-0.65 -1.25 5.0 300 25 50 90 50
FAIRCHIL.D
2N5320/2N5321 2N5322/2N5323
10 Watt NPN-PNP Silicon Power
VCECsatl ... -0.7 V hFE ... 40-250 @ VCE = 4.0 V, Ic = 0.5 A Complements ... 2N5320, NPN (2N5322, PNP); 2N5321, NPN (2N5322, PNP)
PACKAGE 2N5320 2N5321 2N5322 2N5323
TO-39 TO-39 TO-39 TO-39
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures -65 C to 200 C Storage Temperature Operating Junction Temperature 200 C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Case Temperature Linear Derating Factor Voltages & Currents VCEO Collector to Emitter Voltage Vceo Collector to Base Voltage VEeo Em itter to Base Voltage Ic Collector Current Ie Base Current Voltages & Currents VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current Ie Base Current
10 W 0.057W/oC 5320 75 V 100 V 7.0V 2.0A 1.0 A 5322 -75 V -100 V -7.0 V 2.0A 1.0 A 5321 50 V 75 V 5.0V 2.0 A 1.0 A 5322 -50 V -75 V -5.0 V 2.0A 1.0 A
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC IEeo Emitter Cutoff Current 5320 MIN MAX 5321 MIN MAX UNITS mA mA VEe VEe TEST CONDITIONS
0.1
0.1
= 7.0 V = 5.0 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. Pulse conditions: length = 300 ItS; duty cycle';; 10%. 3. Pulse Rep. Frequency = 1 kHz. pulse width = 20 I's. 4. These ratings give a maximum junction temperature of 200"C and junction-to-case thermal resistance of 0.2C/W (derating factor of 0.057 5. Emitter diode is reversed biased. . 6. For product family characteristic curves. refer to Curve Set T314 (2N5320 and 2N5321) and Curve Set T414 (2N5322 and 2N5323).
wrc.
3-325
2N5320/2N5321 2N5322/2N5323
SYMBOL CHARACTERISTIC ICEX Collector Cutoff Current (Note 3)
5320 MIN MAX 5.0
5321 MIN MAX
UNITS mA mA mA mA
TEST CONDITIONS VCE = 70 V, VSE = 1.5 V, Tc = 150C VCE = 45 V, VSE = 1.5 V, Tc = 150C VCE = 100 V, VSE = 1.5 V VCE = 75 V, VSE = 1.5 V Ic = 1.0 A, VCE = 2.0 V Ic = 0.5 A, VCE = 4.0 V
5.0 0.1 0.1 hFE VCEO(SUSI VCE(satl VSE(ONI hfe ton toff DC Current Gain (Note 2) Collector to Emitter Sustaining Voltage (Note 2) Collector to Emitter Saturation Voltage (Note 2) Base to Emitter "On" Voltage (Note 2) Small Signal Current Gain Turn On Time (Note 3) Turn Off Time (Note 3) 5.0 80 800 10 30 75 0.5 1.1 5.0 80 800 130 40 50 0.8 1.4 250
V V V
Ie = 100 mA, Is = 0
Ic = 500 mA, Is Ic
= 50
mA
= 500 mA, VCE =
4.0 V
Ic = 50 mA, VCE = 4.0 V, f=10MHz ns ns Ic = 500 mA, IS1 = 50 mA Ic = 500 mA, IS1 = 50 mA, IS2 = -50 mA
SYMBOL CHARACTERISTIC IEso ICEX Emitter Cutoff Current Collector Cutoff Current
5322 MIN MAX 0.1
5323 MIN MAX 0.1
UNITS mA mA mA
TEST CONDITIONS VES = -7.0 V VES = -5.0 V VCE = -70 V, VSE = -1.5 V, Tc = 150C VCE = -45 V, VSE = -1.5 V, Tc = 150C VCE = -100 V, VSE = -1.5 V VCE = -75 V, VSE = -1.5 V Ic = 1.0 A, VCE = -2.0 V Ic = 500 mA, VCE = -4.0 V
5.0 5.0 0.1 0.1
mA mA mA
hFE
VCEOCsus)
DC Current Gain Collector to Emitter Sustaining Voltage (Note 2) Collector to Emitter Saturation Voltage (Note 2) Base to Emitter "On" Voltage (Note 2) Small Signal Current Gain Turn On Time (Note 3) Turn Off Time (Note 3)
10 30 -75
130
40 -50
250 V -1.20 -1.4 V V
Ic = -100 mA, Is = 0 Ic = 50 mA, Is = 50 mA Ic
VCE(satl VSE(ONI hfe ton tOff
-0.7 '---1.1 5.0 100 1000 5.0
= 500
mA, VCE = -4.0 V
Ic = 50 mA, VCE f = 10 MHz 100 1000 ns ns
= 4.0 V,
Ic = 500 mA, IS1 = -50 mA Ic = 500 mA, IS1 = -50 mA, IS2 = 50 mA
3-326
FAIRCHIL.O
2N5336/2N5338
6 Watt NPN Silicon Power
Po ... 6.0 W @ Tc = 25 C LVCEO ... 80 Vand 100 V (Min) VCE(sa!) ... 1.2 V (Max) @ 5.0 A
TO-5 TO-5
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation Total Dissipation at 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current IB Base Current
-65 C to 200 C 200C
6.0W
5336
80 80 6.0 5.0 1.0 V V V A A
5338
100 V 100 V 6.0 V 5.0A 1.0 A
UNITS J.LA VEB TEST CONDITIONS 100 10
ELECTRICAL CHARACTERISTICS (25C Ambient Temperature unless otherwise noted) (Note 4) SYMBOL lEBO ICBO ICEX CHARACTERISTIC Emitter Cutoff Current Collector Cutoff Current Collector Cutoff Current 5336 MIN MAX 100 10 10 1.0 10 1.0 hFE DC Current Gain (Note 2) 30 30 20 30 30 20 5338 MIN MAX
= 6.0 V,
Ic = 0
J.LA
J.LA J.LA mA J.LA mA
VCE = 80 V, IE = 0 VCE = 100 V, IE = 0 VCE = 75 V, VBE = 1.5 V VCE = 75 V, VEB = 1.5 V, Tc = 150C VCE = 90 V, VBE = 1.5 V VCE = 90 V, VBE = 1.5 V, Tc = 150C Ic = 500 mA, VCE = 2.0 V Ic = 2.0 A, VCE = 2.0 V Ic = 5.0 A, VCE = 2.0 V
120
120
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. Pulse conditions: length = 300 "'s; duty cycle", 2%. 3. These ratings give a maximum junction temperature of 2000C andjunction-to-casethermal resistanceof33.30CIW (linear derating factor of 34 mW/OC. 4. For product family characteristic curves, refer to Curve Set T316.
3-327
2N5336/2N5338
5336
SYMBOL VeEOISUS) VeElsatl VBElsatl td t, ts tf CHARACTERISTIC Collector to Emitter Sustaining Voltage (Note 2) Collector to Emitter Saturation Voltage (Pulsed) (Note 2) Base Saturation Voltage (Pulsed) (Note 2) Turn On Delay Time Turn On Rise Time Turn Off Storage Time Turn Off Fall Time MIN MAX
5338
MIN MAX UNITS V TEST CONDITIONS Ie = 50 rnA, Is = 0 Ie = 2.0 A, IB = 200 rnA Ie = 5.0 A, IB = 500 rnA Ie = 2.0 A, IB = 200 rnA Ie = 5.0 A, IB = 500 rnA Ie = 2.0 A, Vee = 4.0 V, IBI = 200 rnA Ie = 2.0 A, Vee = 40 V, IBI = 200 rnA Ie = 2.0 A, Vee = 40 V, IBI = IS2 = 200 rnA Ie = 2.0 A, Vee = 40 V, IBI = IB2 = 200 rnA
80 0.7 1.2 1.2 1.8 100 100 2.0 200
100 0.7 1.2 1.2 1.8 100 100 2.0 200
V V V V ns ns
!J.S
ns
3-328
FAIRCHILD
2N5400/FTS05400 2N5401/FTS05401
PNP High Voltage Small Signal General Purpose Amplifiers
VCEO ... -120 V (Min) (2N/FTS05400), -150 V (Min) (2N/FTS05401 ) hFE ... 60-240 @ 10 mA (2N/FTS05401) VCE!Sall ... -0.5 V (Max) @ 50 mA Complements ... 2N5550, MPS5551M
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature -55 to 150 C Operating Junction Temperature 150 C Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEo Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Collector Current Ic
2N 0.625 W 1.0 W 5400 -120 V -130 V -5.0 V 600 mA
FTSO 0.350 W'
UNITS V V V 50 50 nA nA nA IJ.A IJ.A TEST CONDITIONS Ic = 1.0 mA, IB = 0
5401 -150 V -150 V -5.0 V 600 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVCEO BVcBo BVEBO lEBO ICBO 5400 MIN MAX 5401 MIN MAX -150 -160 -5.0 50 100 100 50 hFE DC Pulse Current Gain (Note 5) 30 40 40 . 180 50 60 50 240
Collector to Emitter Breakdown -120 Voltage (Note 5) Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current -130 -5.0
Ie = 100 IJ.A, IE = 0
IE = 10 IJ.A, Ic = 0 VEB = -3.0 V, Ic = 0 VCB = -100 V, IE = 0 VCB = -120 V, IE = 0 VCB = -100 V, IE =0, TA = 100C VCB= -120V, IE=O, TA =1000 C Ic = 1.0 mA, VCE = -5.0 V Ic = 10 mA, VCE = -5.0 V Ic = 50 mA, VCE = -5.0 V
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150' C and (TO-92) junction-to-case thermal resistance of 125' C/W (derating factor of 8.0 mWr C); j unction-to-ambient thermal resistance of 200' C/W (derating factor of 5.0 mW/' C); (TO-236) j unction-to-ambient thermal resistance of 357' C/W (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 I'S; duty cycle = 2%. 6. For product family characteristic curves. refer to Curve Set T232. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-329
2N5400/FTS05400 2N5401/FTS05401

SYMBOL CHARACTERISTIC VeEfsatl VBEfsatl COb h'e Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance Small Signal Current Gain 30 5400 MIN MAX --{l.20 --{l.5 -1.0 -1.0 6.0 200 400 8.0 40 100 5401 MIN MAX -0.20 --{l.5 -1.0 -1.0 6.0 200 300 8.0 mHz dB UNITS V V V V pF TEST CONDITIONS ic=10mA,le=1.0mA ic = 50 mA, Ie = 5.0 mA ic=10mA, le=1.0mA Ie = 50 mA, IB = 5.0 mA VeB =-10V, IE=O, f=1.0MHz Ie = 1.0 mA, VeE = -10 V, f=1.0kHz Ie = 10 mA, VeE = -10 V, f= 100 MHz Ie = 250 jJ.A, VeE = -5.0 V, f = 10 Hz to 15.7 kHz, Rs = 1.0 kO
h
NF
Current Gain Bandwidth Product 100 Noise Figure
3-330
FAIRCHILD
2N5415/2N5416
PNP Silicon Power Transistor
10 W Dissipation at 25 C Case 1 A (Max) Continuous Collector Current Up to 350 V VCBO Rating (2N5416) Complements ... 2N3439, 2N3440
TO-39 TO-39
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Case Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current (Continuous) IB Base Current (Continuous)
-65 C to 200 C 200C
10 W 5415 -200 V -200 V -4.0 V 1.0 A 0.5 A 5416 -300 V -350 V -4.0 V 1.0 A 0.5A
5416 MIN MAX 20 UNITS TEST CONDITIONS VEB = -4.0 V. Ic = 0 VEB = -6.0 V, Ic = 0 VCB = -175 V. IE = 0 VCB = -280 V, IE = 0 VCE = -200 V. VBE = 1.5 V VCE = -300 V. VBE = 1.5 V VCE = -150 V. IB = 0 VCE = -250 V. IB = 0 Ic = 50 mA, VCE = -10 V 20 50 50 50 50 50 50
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL lEBO ICBO ,CEV ICEO hFE CHARACTERISTIC Emitter Cutoff Current Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current DC Current Gain (Note 5) 30 5415 MIN MAX
/lA /lA /lA /lA /lA /lA

~
150
30
120
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 2000 C and junction-ta-case thermal resistance of 0.20 C/W (derating factor of 0.057 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 ~s; duty cycle = 2%. 6. For product family characteristic curves, refer to Curve Set T443.
3-331
2N5415/2N5416

VCEO(sus)
5415 MIN MAX
5416 MIN MAX -300 -350
UNITS V V
TEST CONDITIONS Ic = 50 mA, IB = 0 Ic = 50 mA, RBE = 50
Collector to Emitter Sustaining -200 Voltage (Note 5) Collector to Emitter Sustaining Voltage (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage Output Capacitance Input Capacitance Magnitude of Common Emitter Small Signal Current Gain Small Signal Current Gain Real Part of Common Emitter Small Signal ShortCircuit Impedance Second Breakdown Collector Current 100 3.0 25 300 -2.5 -1.5 15 75
VCERISUS) VCElsatl VBEION) Cob Cib
-2.0 -1.5 15 75 3.0 25 300
V V pF pF
Ic = 50 mA, IB = 5.0 mA Ic = 50 mA, VCE = -10 V VCB = -10 V, IE = 0 f=1.0MHz VEB = -5.0 V, Ic = 0 f=1.0MHz Ic = 10 mA, VCE = -10 V, f=5.0MHz Ic = 5.0 mA, VCE = -10 V, f=1.0kHz
I hfel
hfe R.(h ie)
n
mA
Ic = 5.0 mA, VCE = -10 V, f = 1.0 MHz VCE = -100 V, t = 1.0 s (non repetitive)
Islb
100
3-332
FAIRCHILD
2N5550/FTS 05550
2N5551/MPS5551 FTS05551
hFE
VCEO ... 160 V (Min) (MPS/FTS05551) 80-250 @ 10 mA (MPS/FTS05551) VCEIU 0.2 V (max) @ 50 mA (MPS/FTS05551) Complements... 2N5400, 2N5401
PACKAGE 2N5550 2N5551 MPS5551 FTS05550 FTS05551
TO-92 TO-92 TO-92 TO-236AAI AB TO-236AAIAB
-55 C to 150 C 150C
2N 0.625 W 1.0W 5550 140 V
FTSO 0.350 W'
5551 160 V
160 V 6.0 V 600 mA
180 V 6.0V 600 mA
SYMBOL CHARACTERISTIC BVcEo BVcBo BVEBO lEBo ICBO
5550 MIN MAX
5551 MIN MAX 160 180 6.0
UNITS V V V
TEST CONDITIONS Ic = 1.0 mA, IB = 0 Ic = 100 /-tA, IE = 0 IE = 10 /-tA, Ic = 0 VEB = 4.0 V, Ic = 0 VCB = 100 V, IE = 0 VCB = 120 V, IE = 0 VCB = 100V, IE =0, TA=100C VCB = 120V, IE=O, TA= 1000 C
Collector to Emitter Breakdown 140 Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current 160 6.0 50 100
50 50
nA nA nA /-t A /-t A
100 50
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150" C and (T0-92) junction-to-case thermal resistance of 125' C/W (derating factor of 8.0 mW/ o C); junction-to-ambient thermal resistance of 200" ClW (derating factor of 5.0 mWr C); (TO-236) junction-to-ambient thermal resistance of 357" CIW (derating factor of 2.8 mW/o C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length" 300 I'S; duty cycle" 1%. 6. For product family characteristic curves, refer to Curve Set T147. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-333
2N5550/FTS05550 2N5551/MPS5551 FTS05551
ELECTRICAL CHARACTERISTICS (250 C Ambient Temperature unless otherwise noted) (Note 6) 5550 SYMBOL CHARACTERISTIC MIN MAX DC Pulse Current Gain (Note 5) 60 hFE 60 250 20 VCElsatl VBEloatl
Cob
5551 MIN MAX 80 80 30 250 0.15 0.25 1.0 1.0 6.0
UNITS
TEST CONDITIONS Ic = 1.0 mA, VCE = 5.0 V Ic = 10 mA, VCE = 5.0 V Ic = 50 mA, VCE = 5.0 V
Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Output Capacitance Input Capacitance (2N/FTS05550) (MPS/FTS05551) (2N5551) Small Signal Current Gain Current Gain Bandwidth Product Noise Figure 50 100
0.15 0.25 1.0 1.2 6.0 30
V V V V pF pF pF pF
Ic = 10 mA, IB = 1.0 mA Ic = 50 mA, IB = 5.0 mA Ic = 10 mA, IB = 1.0 mA Ic = 50 mA, IB = 5.0 mA VCB=10V,IE=0,f=1.0MHz VBE =0.5 V, Ic =0, f =1.0MHz VBE =0.5 V, Ic =0, f =1.0MHz VBE =0.5 V, Ic =0, f =1.0MHz Ic = 1.0 mA, VCE = -10 V, f= 1.0 kHz
C ib
30 20 200 300 10 50 100 200 300 8.0
hIe
fr
NF
MHz dB
Ic = 10 mA, VCE = 10 V, f = 100 MHz Ic = 250 p.A, VCE = 5.0 V, f = 10 Hz to 15.7 kHz, Rs = 1.0 k!l
3-334
FAIRCHILD
2N5679/2N5680 2N5681/2N5682
1.0 Amp 10 Watt NPN-PNP Complementary Power
PACKAGE:
h ... 30 MHz @ Ie

= 100 mA VCElsatl ... 0.6 V @ Ic = 0.25 A Complements ... 2N5679, PNP (2N5681, NPN); 2N5680, PNP (2N5682, NPN)
2N5679 2N5680 2N5681 2N5682 ,
TO-39 TO-39 TO-39 TO-39
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature _65 C to 200 C Operating Junction Temperature 200 C Power Dissipation (Notes 2 & 3) Continuous Dissipation at 25 C Ambient Temperature Continuous Dissipation at 25 C Case Temperature Voltages & Currents (Note 4) VCEO Collector to Emitter Voltage VCBO Collector to Base Voltage VEeo Emitter to Base Voltage Collector Current Ic Base Current Ie Voltages & Currents (Note 4)
1.0 W 10 W
5679 -100 V -100 V -4.0 V 1.0 A 0.5A 5681 100 V 100 V 4.0 V 1.0 A 0.5A 5680 -120 V -120 V -4.0 V 1.0 A 0.5A 5682 120 V 120 V 4.0 V 1.0A 0.5A
VCEO VCBO VEBO Ic Ie
Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage Collector Current Base Current
SYMBOL CHARACTERISTIC Emitter Cutoff Current IEeo IcBO Collector Cutoff Current
5679 MIN MAX 1.0 1.0
5680 MIN MAX 1.0 1.0
UNITS
TEST CONDITIONS
p,A
IIA IIA
= -4.0 V, Ic = 0 Vce = -100 V, IE = 0 Vce = -120 V, IE = 0

VEe
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 200 C and junction-to-case thermal resistance of 0.2 C/W (derating factor of 0.057 mW/o C); junction-to-ambient thermal resistance of 0.02CIW (derating factor of 0.0057 mW/C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length =300 I'S; duty cycle = 2%. 6. For product family characteristic curves. refer to Curve Set T415 (2N5679 and 2N5680) and Curve Set T315 (2N5681 and 2N5782).
3-335
2N5679/2N5680 2N5681/2N5682

SYMBOL CHARACTERISTIC Collector Cutoff Current ICEo ICEX Collector Reverse Current (Note 3) 5679 MIN MAX 10 10 1.0 1.0 1.0 1.0 hFE VCEocsuSI VCECsatl DC Current Gain (Note 5) 5.0 40 5.0 150 5680 MIN MAX UNITS J.lA J.lA rnA rnA J.lA J.lA TEST CONDITIONS Vcs = -70 V, Is = 0 Vcs = -80 V, Is = 0 VCE = -100 V, Tc = 150C VCE = -120 V, Tc = 150C VCE = -100 V, VCE = -120 V, VSE = -1.5 V, VSE = -1.5 V, VSE = -1.5 V VSE = -1.5 V
40
-120
150 V -2.0 -1.0 -0.6 -1.0 50 V V V V pF
Ic = 1.0 A, VCE = -2.0 V Ic = 250 rnA, VCE = -2.0 V Ic = 10 rnA, Is = 0 Ic = 1.0 rnA, Is = 200 rnA Ic = 500 rnA, Is = 50 rnA Ic = 250 rnA, Is = 25 rnA Ic = 250 rnA, VCE = -2.0 V Vcs = -20 rnA, IE = 0 f = 1.0 MHz Ic = 100 rnA, VCE = -10 V, f = 10 MHz Ic = 200 rnA, VCE = -1.5 V, f=1.0kHz
Collector to Emitter Sustaining -100 Voltage (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 5) Common Base Output Capacitance High Frequency Current Gain Small Signal Current Gain 3.0 40 -2.0 -1.0
~0.6
VSECONI COb hre hre
-1.0 50 3.0 40
3-336
2N5679/2N5680 2N5681/2N5682
SYMBOL CHARACTERISTIC lEBO ICBO ICEo ICEX Emitter Cutoff Current Collector Cutoff Current Collector Cutoff Current Collector Cutoff Current
5681 MIN MAX 1.0 1.0
5682 MIN MAX 1.0 1.0
UNITS IJA
TEST CON OITIONS VEB = 4.0 V, Ic = 0 VCB = 100 V, IE = 0 VeB = 120 V, IE = 0 VeB = 70 V, IB = 0 VCB = 80 V, IB = 0 VCE = 100 V, VBE = 1.5 V, Tc = 150C VCE = 120 V, VBE = -1.5 V, Tc = 150C VeE = -100 V, VBE = 1.5 V VCE = -120 V, VBE = 1.5 V Ic = 1.0 A, VCE = 2.0 V Ic = 250 rnA, VCE = 2.0 V
jJ.A IJA jJ.A jJ.A

rnA
10 10 1.0 1.0 1.0 1.0
rnA
jJ.A IJA
hFE VCEOISuSJ VCElsalJ
DC Current Gain (Note 5) Collector to Emitter Sustaining Voltage (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage (Note 2) Output Capacitance High Frequency Current Gain Small Signal Current Gain
5.0 40 100
150
5.0 40 120
150 V 2.0 1.0 0.6 1.0 50 V V V V pF
Ic = 10 rnA, IB = 0 Ic = 1.0 rnA, IB = 200 rnA Ic = 500 rnA, IB = 50 rnA Ic = 250 rnA, IB = 25 rnA Ic = 250 rnA, VCE = 2.0 V VeB = 20 rnA, IE = 0 f = 1.0 MHz Ic = 100 rnA, VCE = 10 V, f = 10 MHz Ic = 200 rnA, VCE = 1.5 V, f=1.0kHz
2.0 1.0 0.6 1.0 50 3.0 40 3.0 40
VBEIONJ Cob hie hie
3-337
FAIRCHILD
2N5771/FTS05771
PNP Ultra High Speed Saturated Log ic Switch
ton .
VCEO ... 15 V (Min) 15 ns (Max) @ 10 rnA, toff . 20 ns (Max) @ 10 rnA Ts 20 ns (Max) @ 10 rnA Complements ... 2N5769, 2N5772
TO-92
TO-236AAI AB
-55 C to 150 C 150C
2N 0.625 W 1.0W
FTSO 0.350 W'
-15 V -15 V -4.5 V SOmA

SYMBOL BVcEo BVcEs BVcBo BVEBo ICBO lEBO ICES hFE CHARACTERISTIC MIN MAX UNITS V V V V 10 1.0 10 5.0 35 50 40 20 120 nA fJ.A nA ~ TEST CONDITIONS Ic = 3.0 mA, Is = 0 Ic = 100 fJ.A, VBE = 0 Ic = 100 fJ.A, IE = 0 IE = 100 fJ.A, Ic = 0 VCB = -8.0 V, Ic = 0 VEB = -4.5 V, Ic = 0 VCE = -8.0 V, VBE = 0 VCE = -8.0 V, VBE = 0, TA = 125C Ic Ic Ic Ic = = = = 1.0 mA, VCE = -0.5 V 10 mA, VCE = -0.3 V 50 mA, VCE = -1.0 V 10 rnA, VCE =-0.3 V, TA =55C
Collector to Emitter Breakdown Voltage -15 (Note 5) Collector to Emitter Breakdown Voltage -15 Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Collector to Base Cutoff Current Emitter Cutoff Current Collector Reverse Current DC Current Gain (Note 5) -15 -4.5
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and (TO-92) junction-to-case thermal resistance of 1250 elW (derating factor of 8.0 mW/' C); junction-to-ambient thermal resistance of 200' CIW (derating factor of 5.0 mW/' C); (TO-236) j unction-to-ambient thermal resistance of 357' CIW (derating factor of 2.8 mW/' C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 /,s; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T292. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-338
2N5771/FTS05771

SYMBOL CHARACTERISTIC VeElsall Collector to Emitter Saturation Voltage (Note 5) Base to Emitter Saturation Voltage (Note 5) Collector to Base Capacitance Emitter to Base Capacitance High Frequency Current Gain Turn On Time (test circuit no 348) Turn Off Time (test circuit no 348) Charge Storage Time Constant (test circuit no. 234) 8.5 15 20 20 ns ns ns MIN MAX -0.18 -0.15 -0.6 -0.8 -0.95 -1.5 3.0 3.5 UNITS V V V V V V pF pF TEST CONDITIONS Ie = 10 mA, Ie = 1.0 mA Ie = 1.0 mA, Ie = 0.1 mA Ie = 50 mA, Ie = 5.0 mA Ie = 1.0 mA, Ie = 0.1 mA Ie = 10 mA, Ie = 1.0 mA Ie = 50 mA, Ie = 5.0 mA Vee = -5.0 V, IE = 0, f = 140 kHz VEe = -0.5 V, Ie = 0, f = 140 kHz le= 10 mA, VeE= -10V, f = 100MHz Ie = 10 mA, le1 = 1.0 mA Ie = 10 mA, le1 = le2 = 1.0 mA Ie = 10 mA, le1
VeEIsall
-0.8
Ccb Ceb h'e ton

tOft
Ts
le2
= 10 mA
3-339
FAIRCHILD
2N5830/FTS05830 2N5831/FTS05831 2N5833/FTS05833

PACKAGE 2N5830 2N5831 2N5833 FTS05830 FTS05831 FTS05833

TO-92 TO-92 TO-92 TO-236AAI AB TO-236AAIAB TO-236AAI AB
VCEO ... 100 V (Min) (2N5830), 140 V (Min) (2N/FTS05831), 180 V (Min) (2N/FTS05833) hFE ... 80 (Min) (2N/FTS05830/1), 50 (Min) (2N/FTS05833) CCb 4.0 pF (Max)
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 25 C case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBO Collector to Base Voltage VESO Emitter to Base Voltage Collector Current Ic
-55 C to 1500 C 1500 C
2N 0.625 W 1.0W 5830 100 V 120 V 5.0 V 600 mA
FTSO 0.350 W'
5831 140 V 160 V 5.0 V 600 mA
5833 180 V 200 V 6.0V 600 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 5) SYMBOL CHARACTERISTIC BVcEo BVCBO BVEBO lEBO IcBO 5830 MIN MAX Collector to Emitter Breakdown 100 Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current 120 5.0 50 50 50 25 25 hFE DC Current Gain (Note 4) 60 80 80 500 60 80 80 250 5831 MIN MAX 140 160 5.0 UNITS V V V TEST CONDITIONS Ic = 1.0 rnA, Is = 0 Ic=100}J.A,IE=0 IE = 10 /LA, Ic = 0 VES = 4.0 V, Ic = 0 VCB = 100 V, IE = 0 Vcs=120V,IE=0 VCB = 100 V, IE=O, TA=100C Vcs=120V, IE=O, TA=1000C Ic = 1.0 mA, VCE = 5.0 V Ic = 10 mA, VCE = 5.0 V Ic = 50 mA, VCE = 5.0 V
50
nA nA nA /LA /LA
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 1500 C and (TQ-92) junction-to-case thermal resistance of 125'CIW (derating factor of 8.0 mW/' C); junction-to-ambient thermal resistance of 2000 CIW (derating factor of 5.0 mW/' C); (TO-236) junction-to-ambient thermal resistance of 357" CIW (derating factor of 2.8 mWI' C). 4. Pulse conditions: length';;; 300 I'S; duty cycle';;; 1%. 5. For product family characteristic curves, refer to Curve Set T147. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-340
2N5830/FTS05830 2N5831/FTS05831 2N5833/FTS05833

SYMBOL CHARACTERISTIC Collector to Emitter Saturation VCElsatl Voltage (Note 4) V8EIONI V8EIsatl Base to Emitter "On" Voltage Base to Emitter Saturation Voltage (Note 4) Collector to Base Capacitance Magnitude of Common Emitter High Frequency Current Gain Small Signal Current Gain Input Resistance Output Conductance 1.0 60 6.0 40 5830 MIN MAX 0.15 0.20 0.25 0.8 0.8 1.0 1.0 4.0 5.0 1.0 60 6.0 kO /lmho 5831 MIN MAX 0.15 0.20 0.25 0.8 0.8 1.0 1.0 4.0 5.0 UNITS V V V V V V V pF TEST CONDITIONS Ic = 1.0 rnA, 18 = 0.1 rnA Ic = 10 rnA, 18 = 1.0 rnA Ic = 50 rnA, 18 = 5.0 rnA Ic = 1.0 rnA, VCE = 5.0 V Ic = 1.0 rnA, 18 = 0.1 rnA Ic = 10 rnA, 18 = 1.0 rnA Ic = 50 rnA, 18 = 5.0 rnA VCB = 10 V, IE =0, f = 1.0MHz Ic = 10 rnA, VCE = 10 V, f= 100 MHz Ic = 1.0 rnA, VCE = 10 V, f = 1.0 kHz Ic = 1.0 rnA, VCE = 10 V, f= 1.0 kHz Ic 1.0 rnA, VCE = 10 V, f= 1.0 kHz
Ccb
Ihlel hIe hie hoe
40
3-341
2N5830/FTS05830 2N5831/FTS05831 2N5833/FTS05833
SYMBOL CHARACTERISTIC Collector to Emitter Breakdown BVcEo Voltage BVcBo BVEBO lEBO ICBO hFE Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current DC Current Gain (Note 4)
5833 MIN MAX 180 200 6.0 50 10 25 50 50 50 250 0.15 0.20 0.25 0.8 0.8 1.0 1.0 4.0 1.0 50 6.0 40 5.0
UNITS V V V nA nA itA
TEST CONDITIONS Ic = 1.0 rnA, IB = 0 Ic = 100 itA, IE = 0 IE = 10 itA, Ic = 0 VEB = 5.0 V, Ic = 0 VCB = 160 V, IE = 0 VCB = 160 V, IE = 0, TA = 100" C Ic = 1.0 rnA, VCE = 5.0 V Ic = 10 rnA, VCE = 5.0 V Ic = 50 rnA, VCE = 5.0 V
VCElsatl
Collector to Emitter Saturation Voltage (Note 4) Base to Emitter "On" Voltage Base to Emitter Saturation Voltage (Note 4) Collector to Base Capacitance Magnitude of Common Emitter High Frequency Current Gain Small Signal Current Gain Input Resistance Output Conductance
V V V V V V V pF
Ic = 1.0 rnA, IB = 0.1 rnA Ic = 10 rnA, Is = 1.0 rnA Ic = 50 rnA, Is = 5.0 rnA Ic = 1.0 rnA, VCE = 5.0 V Ic = 1.0 rnA, IB = 0.1 rnA Ic = 10 rnA, Is = 1.0 rnA Ic = 50 rnA, Is = 5.0 rnA Vcs = 10 V, IE = 0, f = 1.0 MHz Ic = 10 rnA, VCE = 10 V, f = 100 MHz Ic = 1.0 rnA, VCE = 10 V, f= 1.0kHz
VSEIONI VSElsatl
Ccb
Ihlel
hie hie hoe
kO Itmho
Ic = 1.0 rnA, VCE = 10 V, f = 1.0 kHz Ic = 1.0 rnA, VCE = 10 V, f= 1.0 kHz
3-342
FAIRCHIL.D
2N5961/FTS05961 2N5962/FTS05962
NPN Low Level Low Noise Amplifiers
ICBo ... 2.0 nA (Max) @ VCB = 45 V, 50 nA (Max) @ VCB = 45 V, TA = 65C (2N/FTS05961) VCElsatl ... 0.2 V (Max) @ 10 mA/O.5 rnA hFE ... 900 (Min) @ 10 p,A
ABSOLUTE MAXIMUM RATINGS (Note 1) Temperatures Storage Temperature Operating Junction Temperature Power Dissipation (Notes 2 & 3) Total Dissipation at 25 C Ambient Temperature 7rJ' C Ambient Temperature 25 C Case Temperature Voltages & Currents VCEO Collector to Emitter Voltage (Note 4) VCBo Collector to Base Voltage VEBO Emitter to Base Voltage Ic Collector Current (Continuous)
-55 C to 150 C 150C
I
FTSO 0.350 W* 5962 45 V 45 V 8.0V 50 mA
2N 0.625 W 0.400 W 1.0W 5961 60V 60 V 8.0 V 50 mA
ELECTRICAL CHARACTERISTICS (25 C Ambient Temperature unless otherwise noted) (Note 6) SYMBOL CHARACTERISTIC BVCEO BVcBo BVEBo lEBO ICBO Collector to Emitter Breakdown Voltage Collector to Base Breakdown Voltage Emitter to Base Breakdown Voltage Emitter Cutoff Current Collector Cutoff Current 5961 MIN MAX 60 60 8.0 1.0 2.0 2.0 50 50 5962 MIN MAX 45 45 8.0 1.0 UNITS V V V nA nA nA nA nA TEST CONDITIONS Ic = 5.0 mA, IB = 0 le=10p,A,IE=0 Ie = 10 p,A, Ic = 0 VEB = 5.0 V, Ic = 0 VCB VCB VCB VeB = = = = 45 30 45 30 V, V, V, V, IE Ie IE IE = = = = 0 0 0, TA = 65C 0, TA = 65 C
NOTES: 1. These ratings are limiting values above which the serviceability of any individual semiconductor device may be impaired. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3. These ratings give a maximum junction temperature of 150' C and (TO-92) junction-to-case thermal resistance of 1250 CIW (derating factor of 8.0 mWr C); junction-to-ambient thermal resistance of 200 C/W (derating factor of 5.0 mW/o C); (TO-236) junction-to-ambient thermal resistance of 3570 C/W (derating factor of 2.8 mWr C). 4. Rating refers to a high current point where collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 !,s; duty cycle = 1%. 6. For product family characteristic curves, refer to Curve Set T107. Package mounted on 99.5% alumina 8 mm x 8 mm x 0.6 mm.
3-343
2N5961/FTS05961 2N59621FTS05962

SYMBOL CHARACTERISTIC hFE DC Current Gain 5961 MIN MAX 100 12.0 135 15.0 700 .0.2 .0.5 .0.7 4..0 6..0 1..0 15.0 1.0.0.0 6..0 1..0 65.0 200.0 6..0 dB .0.5 5962 MIN MAX 45.0 500 55.0 600 14.0.0 .0.2 .0.7 4..0 6 ..0 V V pF pF UNITS TEST CONDITIONS Ic = 1.0 p.A, VCE = 5 ..0 V Ic = 100 p.A, VCE = 5 ..0 V Ic = 1..0 mA, VCE = 5 ..0 V Ic = 1.0 mA, VCE = 5 ..0 V Ic = 1.0 mA, IB = .0.5 mA Ic = 1..0 mA, VCE = 5..0 V VCB = 5 ..0 V, IE = .0 VBE = .0.5 V, Ic = .0 Ic = 1.0 mA, Vee = 5 ..0 V, f = 1.0.0 MHz Ic = 1.0 mA, VCE = 5 ..0 V, f = 1..0 kHz Ic = 1.0.0 p.A, VCE = 5 ..0 V, f = 1..0 kHz, Rs = 1..0 kn, BW =4.0.0 Hz Ic = 1.0.0 p.A, VCE = 5 ..0 V, f = 1..0 kHz, Rs = 1.0 kn, BW = 4.0.0 Hz Ic = 1.0.0 p.A, VCE = 5 ..0 V, f = 1..0 kHz, Rs = 1.0.0 kn, BW= 400 Hz Ic = 1.0 p.A, VCE = 5 ..0 V, f = 1..0 kHz, Rs = 1.0 kn, BW= 400 Hz Ic = 1.0 p.A, VCE= 5..0 V, Rs = 1.0 kn, BW = 15.7 kHz, f = 1.0 Hz to 1.0 kHz
hFE VCElsall VBEIONI Ccb

Cab
DC Pulse Current Gain (Note 5) Collector to Emitter Saturation Voltage (Note 5) Base to Emitter "On" Voltage Collector to Base Capacitance Emitter to Base Capacitance Magnitude of Common Emitter Small Signal Current Gain Small Signal Current Gain Narrow Band Noise Figure
I hlel
h,e NF
4..0
dB
8 ..0
dB
3..0
3..0
dB
NF
Wide Band Noise Figure
3 ..0
3..0
dB
3-344
Product Family Curves Test Circuits ng Information and Outlines High Reliability Information Dice and Wafer Information
Field Sales Offices
FAIRCHILD
Product Family Curves Curve Set number 01
Typical Electrical Characteristic Curves 25 C Ambient Temperature unless otherwise noted

DC FORWARD CURRENT VERSUS FORWARD VOLTAGE
1000
TA
25C
FORWARD CURRENT VERSUS FORWARD VOLTAGE (PULSE)

1000
TA 250J Pulse Width = 4oo/-ls Duty CYcle = 2%
DC FORWARD CURRENT VERSUS TEMPERATURE COEFFICIENT

1000
1=
100
, ,
~ ,
.,
V
>I<
Q
1 , 100
~
~
'\ '\
~, '"
0.01
B 100 ~
a;
1/
10
/
II
0.7 0.8 0.9 1.0 1.1 1.2 1.3
YF - FORWARD VOLTAGE - VOL T5
"
.
I<
1.0
I<
fi' ,
'"
0.1
0.2
0.4
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1.2
10 0.6
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'\
0.5
1.0
1.5
2.0
2.5
3.0
I/F - FORWARD VOLTAGE - VOLTS
TC - TEMPERATURE COEFFICIENT - mV rc
O.
~ ,
REVERSE CURRENT VERSUS REVERSE VOLTAGE

1
REVERSE CURRENT VERSUS AMBIENT TEMPERATURE

100
VR - 1001/
FORWARD CURRENT VERSUS DYNAMIC IMPEDANCE
TA=25C
.05
!
m
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./
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80
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20
40
60
0.01
25
0.01
50 75 100 125 150
T A - AMBIENT TEMPERATURE - C
L~~L-'-__--L_~---L_JJ!lL.I
1.0
10
100
VA - REVERSE VOLTAGE - VOL T8
RO - DYNAMIC IMPEDANC[ -
a n
10k
CAPACITANCE VERSUS REVERSE VOLTAGE

3.0
TA = 25C f= 1.0 MHz
AVERAGE RECTIFIED CURRENT AND FORWARD CURRENT VERSUS AMBIENT TEMPERATURE

500
POWER DERATING CURVE
2.5
"\.
\
'!;.
~
2.0
, 400
."' 5 .. .. ,
u z
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fOO
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200
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25 50 75
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100
f-----+--+-f---x:
100
3.0
6.0
9.0
12
15
TA - Ai\\BINT TEI.\PERATURE - C
100 125 150 175 200
VR - REVERSE VOLTAGE - VOlTS
TA - AMBIENT TEMPERATURE - "C
4-3
F=AIRCHILD
Curve Set number 02
Typical Electrical Characteristic Curves 25C Ambient Temperature unless otherwise noted
FORWARD VOLTAGE VERSUS FORWARD CURRENT
1000
c E
FORWARD CURRENT VERSUS TEMPERATURE COEFFICIENT

500 6.0
- " c---'
1 100
, , ,
I
0.4 0.6 0.8
""
100
=
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,
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4.0
2.0
,!oO.10
1.0 00 I 1.0 1.2

Te TEMPERATURE COEFFICIENT -
.. ~+
I--
r--
----
--~
0.01 0.2
051,01.5202.53.0
mV/"C
r-T
8.0
12
16
YF - FORWARD VOLTAGE - YOLTS
Yfl - REVERSE VOLTAGE - VOLTS
REVERSE VOLTAGE VERSUS REVERSE CURRENT

1.0 TAl
0.5

5K
DYNAMIC IMPEDANCE VERSUS FORWARD CURRENT

100
='~.C
~
;'
VA"" 125V
lK c
E
~
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II
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$ 25 50 75
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TYP -
1.0
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50 75 100 125 150
0.02
0.01
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~
10
10
100
100
125
2S
01
IK
10K
VR - REVERSE vOLTAGE - VOLTS
T A - AMBIENT TEMPERATURE - C
RO - DYNAMIC IMPEDANCE -

500
"-...
,
'\.
300
400
roo
~
1--+-+--+>.:
(5200
'\.
'\.
1\
100
100
\
o
25 50 75 100 125 150 115 200
TA - AMBIENT TEMPERATURE
TA - AMBIENT TEMPERATURE - C
4-4
FAIRCHILD
Curve Set number 03

1000 100
1.0 r-.......,...:.:.:..;:..:..:..:;....~:..:..:~.::...,~~
1100
I
E
I
~
II: II:
10~-~Hr----4r---+---~
.91---+-+--1-+--1-+-1 .81---+-+--1-+--1-+-1 .71---+-+-+--+-+---jf--I

.5
,0
--
::I
~ 1.0
~ 0.1
I
i
-=-+~-_=i
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~ o ~
.41---+-+-+--+-+---jf--I .31---+-+-+--+-+---jf--I
.2 I----J.--I--~_+-+-_II--I
.1 I----J.--I--~_+-+-_II--I
o~-L_~~_~~_J-~
.!!- .10
.01
r - - - f-r- --o
.2 .4 .6
.!!:.m~0---~1.LO---2~.0-~~3Ln-~-'4n
TC - TEMPERATURE COEFFICIENT - MV'oC
o
VR - REVERSE VOL. TAGE - VOL T5
YF - FORWARD VOLTAGE - VOLTS
REVERSE VOLTAGE VERSUS REVERSE CURRENT

100 ,...---,---,---,--,---,---,
I

100
VR! 20 V
15 II:
II:
10
10
....
!
0
B
ffi
I
~ 1.0
III 0.1 ffi >

~
I
~ z w
100
II: II:
::I
10
0 0
II:
II:
If 0.01
./' ./
o
25 50 75 100 125 150
i...
0
I
1.0 0.1 .01 10K
$
0.1 '--'---'---'----'----'---' o 5.0 10 15 20 25 30
VR - REVERSE VOLTS - VOLTS
0.001
.!!:1K 10 1.0
RD - DYNAMIC IMPEDANCE - OHMS
POWER DISSIPATION, AVERAGE RECTIFIED CURRENT AND FORWARD CURRENT VERSUS AMBIENT TEMPERATURE
600
TRANSIENT THERMAL RESISTANCE VERSUS TIME

:\[~SUR\O:NSTI.~AlRCH'M8['
.,,-e
1/
17
JUNCTION TEMPERATURE VERSUS TIME (COOLING CURVE)
500
15
H- ~tl 'i
JOO
e1,.J-+o~~ Ml,suL I,I I'" Ie

'\
, I
-;!
LL,l
f-+- .+ -i200
I I
100
! I
:
0.1
5 0
TIME CONSJANT
1'-.. I'-...
Jll H+ 111
.0001 .001 .01
I 1111
1
1.0
1
10
1 1
100 1000
"
0
10
r-- I-- W30 40
50
TIME SECONDS
TIME - SECONDS
4-5
F=AIRCHILD
Curve Set number D4
Typical Electrical Characteristic Curves 25 0 C Ambient Temperature unless otherwise noted

'000

4.0
1'00
'0
"/.
I.
~- t--
~::: F= f-"#-
'II.
11.0
~ 0.1
0.01
i
0.2 0.4
.g.
,.
I. - ,
3.0
r-
U 1.0
i--
0.8
0.8
1.0
1.2
OOI!:-o-'0:1:. - - ,.. !0:--.J ..':-,--:,:1:.0..L,:1:.,--:l1.0~-:lU 1

TC . J[MP(RATUR[ COEFFICIENT . mVIGC
4.0
8.0
,.
'6
YF - FORWARD VOLTAGE - VOLTS
VR - REVERSE VOLTAGE - VOL T5

'00
80
TA "" 25"C

'00
VR = 25 V

'00
80 40
I"~
~
I
I
TY~r
,
,,/
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1. ,
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u
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50
.....
75
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'00
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'5
.0
VR - REVERSE VOlTAGE - VOlTS
'5
.010 25
~
10'
.. 0 100 '0 AD - DYNAMIC IMPDANC;E . OHMS
"
REVERSE RECOVERY TIME VERSUS FORWARD CURRENT (IF = IRI

'.0

500

'00
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;:
l. 0
!
_
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f.--'
v
i
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,
~400
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1 roo
f
100
300
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\.. \..
o
25 50 75 100 125 150
JOO
I-+-I-+>"
100
-"
100
1-+-1-+--"'1-';:'
00
100 100 1OO FORWARD CURRENT' REVERSE CURRENT - mA
10 - AVERAGE TEMPERATURE - "C
"
175 200
0~~~~~~-~-I~IO~IL'I~1OO
'A - AMBIlNT TlIIIPlRATURl C
4-6
FAIRCHILO
Curve Set number 06

10,000
REVERSE CURRENT VERSUS TEMPERATURE
8.0
f--I-----I--1--
c 1000
..,
z
u
6.0
!i: w
4.0
f--!--1---I,L.--+~
" ill .. .,
> w
II! :>
100
-~
..q.
/l-~
~~
10
".
!!'
1.0
.1
10
VR - REVERSE VOLTAGE - VOLTS
JO
25
50
75
100
125
150
175
T A - AMBIENT TEMPERATURE -
oc

4

T,
,15C
o~
8
1\'
t-:t
o. 6 o. 4
lO-q
i
11 VR - REVERSE VOLTAGE - VOLTS
w- 8
to- 7 10-6
1O~)
10-4
10- 3
- FORWARD CURRHJT - A
4-7
Curve Set number 06
Test Circuits
A BOUND CIRCUIT FOR OPERATIONAL AMPLIFIERS
MOS FET PROTECTION CIRCUIT
FJTllOO
FJTllOO FJTllOO
FJT1100
FJTllOO
+v
The bound circuit prevents overloading and saturation of operational
amplifiers.
The circuit has negligible effect on the operational
amplifier until overload conditions occur. The use of the low leakage picaampere diode permits realization of extremely high input impedance for normal input voltages.
The picoampere diode affords excellent 'gate voltage protection while maintaining the DC input impedance at about one million
megohms. In addition the very low capacity of the FJTll 00 will have a relatively small effe'ct on the circuit input capacity.
PEAK FOLLOWER CIRCUIT
10,-,---,--,-,---,-,-.
9.0
OUTPUT VOLTAGE OF THE PEAK FOLLOWER CIRCUIT VERSUS TIME
>
0
8.0
7.0
6.0
5.0 5.0
to
(- rll'll ,~\lNUHS
A nearly constant voltage peak follower circuit is available by using a picoampere di ode. A comparison between the use of the FJT 1100 and a "low leakage" FDH333 diode in the circuit is shown in the curves of VOUT vs Time.
4-8
F=AIRCHIL.D
Curve Set number 07

FORWARD CURRENT VERSUS FORWARD VOLTAGE
1000

lOOK
VR 15V
10K 100
LL
J I
1000
10
II
I
100
10
1.0
I
I
0.6
I
1.0
50
100
150
T A - AMBIENT TEMPERATURE -
oc
o. 1
0.4
0.8
1.0
1.2
VF - FORWARD VOLTAGE - VOLTS

4.0
SERIES RESISTANCE VERSUS FORWARD CURRENT
r-..
3.0
,!,JJ.H'
1\
2.0
1.0
1\
]'.
1\
i',...
o
10 100 1
f\. I' r-..
~ -r-.
10
.,
r--
0.1
1.'0
100
VA - REVERSE VOLTAGE - VOLTS
IF - FORWARD CURRENT - mA
4-9
F=AIRCHILD
Curve Set number 013

TEMPERATURE COEFFICIENT VERSUS ZENER CURRENT
2
.,
DYNAMIC IMPEDANCE VERSUS ZENER CURRENT

500
..
.04
I III
24
t==-
III
6.8 Y
2 " ' -
..
'
.. ..
4
2 .01
J...3.6 V
.~~++-4~~~~~~~~~~3~~'V~
5~
SO 100 1.0 0.2 0.5
1/ -
F'-. .2jj _--"

1 2 5 10 20
mA
III
.05.1
III
2~ -H~4-~~~~~~~4-~
.5 ,
'L-~~~~-LLL-L~~,l~v~~~
ZENER CURRENT' -
5 ,.
SO 100
Iz - ZENER CURRENT _ mA
Test Circuit
POWER DERATING VERSUS AMBIENT TEMPERATURE
'00
NOISE DENSITY MEASUREMENT CIRCUIT 1N4099 - 1N4121 1N4620 - 1N4627
500
400
-----,
SH~~;~ED
CIRCUIT
I
I
3. 2.
'00
\
100
L-...-.I
\
125
'\
150
I I
25
50
75
175
-.J
200
TA - AMBIENT TEMPERATURE _
TRUE
RMS VOLT METER
4-10
FAIRCHIL.D

TEMPERATURE COEFFICIENT VERSUS ZENER CURRENT
2
DYNAMIC IMPEDANCE VERSUS ZENER CURRENT.

,K
'00
20 0
08
r-H;j........~-+...,.,#-+-I-I+H
~...
04
. 8V~
r-
o~HtH---+-++t-+-++++-+~H+~
It
..
'0
p-...
-t\.
['..
o~_
20
++++-f-+iblol--l
".04
~
~
I
,-
f4.3 V
H-++H---+-++t-+-++++~4H+-I
}ttt.01 .05.1
'f--
f--
., ,
,
, '0
SO 100
'"
5
"20
24V
6.~
50 100
1.0
0.2
0.5
10
Iz - ZENER CURRENT - mA
Iz - ZENER CURRENT - mA
POWER DERATING VERSUS AMBIENT TEMPERATURE

'.2 '.0
8
1\
"\
'\
.6
.4
.2
'\.
25 50 75 100 125 150 175
"\
200
4-11
FAIRCHIL.D

2.0

10
REVERSE RECOVER TIME VERSUS FORWARD CURRENT
'~"
~
~
"61--+--+---1--+-+-.1
1.2
l.B
f----f---
----
lb
f---+--+---t--1r+f-fl
0 .8
l.O i - - - t - - - j - - - t - - - j
..3=
y / '/ ./ f/". . . . . 4
,
'
-'" / / / / 1/
!f -III4
/, /
0.1
"0
10
100
1000
'.BOL----:,L :------:':60----:"40 O- - . . 1
VR - REVERSL VOLTAGL - VOlTS
I
IF
'
50 100
~oo
10
LOoo
IF - FORWARD CURRiNT - rnA
FORWARD CURRENT - rnA

50
-40
-_.-
t.-
--
--
j
-/
~ r-10
H
o
~- ..
10
Vt
I
OJ
I
60
-~ -~
7~
100
J~
150
VR REVERS[ VOLTAGE - VOLlS
TA - AMBI[NT TU..,PRATUR[ - C
TEST CIRCUITS
To measure reverse current of an individual diode, the following test circuits are used:
COMMON CATHODE DIODES
COMMON ANODE DIODES
SHUNT CURRENT
SHUNT CURRENT
..
4-12
TEST CIRCUITS continued

Test requirement for V FM and tfr is as shown below; all leads should be as short as possible.
INPUT CURRENT PULSE
OUTPUT VOLTAGE PULSE
47 II
T~O%,
500 rnA
10%
I
I I
I I
I
Tel ascI LLOSCDPE tr---: 0.4 ns liN = 5011
t'4--
tr = 10 ns
;_--".~I'---- tf,
t" - REVERSE RECOVERY TIME TEST CIRCUIT I, = I" I" = 0.1 I,
ANODE BIAS SUPPLY
PULSE GENERATOR
-=-
tr'S 5 ns ZIN = 500
PW." 1jJs
DUTY CYCLE" 2%
ov-L
T
~"F
~r---
~L-.J
'F
--f--r----~-L---------OmA
ADJUST FOR IR
'R
AVF BRIDGE MATCHING CIRCUIT
AIR BRIDGE MATCHING CIRCUIT
10 TO lOOVdc ADJUSTABLE
I
NOTES:
1. A Varies depending on the current range. For the most often used current ranges, R is as follows:
Current Range (amperes)
+
diodes D3 & 04, reverse cathode-anodeterminal
NOTES: 1. VR2
2. IA2 -
VAl 1%.
IAl "'" aiR (difference in IR between diodes 01 & 02).
To measure connections.
R (ohms)
10-5 to 10-4 10-4 to 10-3 10-3 to 10-2
106 10 5 104
10"+1
3. A is a center reading pico ammeter. ~IR indicated directly on A.
or 10- n to 10- n + 1
2. V .indicates mismatch of assemblv.
4-13
FAIRCHILD
Test Circuits
I1i.VF DIODE MATCHING CIRCUITS.
I.
10lOI00lldc ADJUSTA8LE
O. In' .... 'MvPEAII.
""i""
1 1 i r,L-_i--------'r< i
c.
Pulse Rise Time (10 to 90% Amplitude) = 1.0 IJs Max.
Pulse Fall Time (90 to 10% Amplitude) Pulse Width (50% Amplitude)
10'0100Vde
AD..IU~ABLE
Transient Time
Period
lOTO TOOl/PEAK
Voltage Input to Circuit "A or B"

Forward Voltage Difference
"" 1.0 III Max. = 1 0 2.0 I's =1.0I'sMin. = 1.0 rns = 10 to 100 V Adjustable
eetween O'iodes
(Mealured Between Transient Times)
= As Specified
NOTES:
1.
R varies depending on the current range. For the most often used current ranges, R is as follows:
Current Range (amperes)
R (ohms)
10- 5 to 10-4 10-4 to 10-3 10- 3 to 10- 2 or 10-n to 10-n+l

2.
106
105
104
10n + 1
The Input volta... p..... condltlonllhown above are employed at Fairchild In teltlng. The us. may devillte from the apecific conditione above wtth no v.rill'ion In reall4l. providing the following gen.,.. condition. ar. met:
. b.
<0.01
tw<10ms
c.
Tranllents occuring during pulse rise and fall times are ignored in observing
~VF.
I1i.IR DIODE MATCHING CIRCUIT
}"'OES"""""
NOTES:
1. VR2 ~ -VRI 1%. 2. IR2 - IR1 = ~IR (difference in IR between two diodel under teld. 3. A II ntor reodIog pIco .......or.
4-14
FAIRCHILD
FPT100 Curve Set

FPT100/A/B Photo Current Characterlatlca FPT1101 AlB Photo Current Characterlatlca '0000
'000
'1 ,
TC 2854K
T~: ll.J
I, ~
~ a
.... '00
~
8 ,
1>
,.,
10
\of(,P'
~*'
* ,a'>l
,,(,~
~G
""
V
~
\C.~
.0
,
,V
.02
0'
10 10
100 200
'000
5000
.00
10 20
100 200
1000
5000
ILLUMINATION _ FT
ILLUMINATION - FT
88 ~ ~~ ~
..!.
~
:;;~
'M
,
~
1 i!l ~ c ~ ~
.;,
~
IRRAOIANCE mWfcm2
i
Collector Baae Characterlttlca
RADIATION mW cm2
Collector Current va Collector Voltage

TA"
25~C
TC 28S4K
I. ~'c~'ly
~'c.""
I I
,.
12
/
15
TA"'2S"C
TC'" 2854K
I I I
200 Ie 10 mW/cm2
I-I-~ V'~ , .l'" , ",.,. ,;&~ ,

'L"""'-
/V /
v""'V
1
"l.lrf\'I'j~ 'O2~
62mWcm 2
39mWcm2
V J
./ j
V /
8.fI mW 'em:"""
I V
~ a ....
"
z :;
....
1 )
I
'/
l 150 fc l-1.s mWlcm2
I I I
100 Ie" 5 mW/crn2
V
30
....
/
,/
/
50
.1l
o
" J
I
'
I I I
50 Ii ..
2.~ mw)cm2
V
'0
1.7mWcm2
'0
I I I
10 20 30 40 50 60 70
I I I
'0
-0.75 -0.5 -0.25 0
Vee - COLLECTOR VOLTAGE - VOL TS
Vea - COLLECTOR TO BASE VOLTAGE - VOLTS
Angular Aeaponae
100
Collector Dark Current va Temperature
90
TA : BO
25~C
70
1/
"" \
\
\
'Ok
'000
. ,
;; ~
60
50 .0
:J
/1
!
i
~
,
100
-lV~'"
'0
1,0
':l
;
~ I. _\G",/ ./ ,,(,~~
/
Rr
'0
v
i--
3D
'0 10
i
40 10 0 <'0 40
\.
60
A~.GLE
/ i
60
DEGREES
~
80 '00
o, /
, L V ,/ , /
'0
..-~
60
BO
100 80
'00
TEMPERATURE C
4-15
FPT100 Curve Set
Spectral Characterl.tlc.
100
RI.e And Fall Time v. Collector Current
90
80
/ 1\
V
II
11
15 t--H-++~;-~++--+-+-t--;--i
\
I
:;: 12 t--tii+--t~r+'kt-+-l--++-;----1 ;::

~
~
I
9t--tii+--t--~++-~~*+-;----1
I
20
1\
500
0 0
\
!'....
1100 1300
Ie - COLLECTOR CURRENT - mA
J
700
300
900
). - WAVelENGTH - nm
Turn-Off Delay Time. For Circuit

30
Vee = 5.0V
Turn-On Delay Time. For Circuit

Vcc=S.OV TA'"25"C
TA"
25~C
a I j
~
s
20
V
(
----
!0-
~
~
o ~
I
~ ~
s
0
i5
i?
I
\
1\
i?
j.
s
0
Ie - INPUT CURRENT - mA
j.
1
"o
.......
1'--
Ie - INPUT CURRENT - ~A
4-16
FAIRCHILD
FPT12.0 Curve Set

FPT120/A/B/C Collector Current V8 Collector Voltage FPT130/A/B/C Collector Current V8 Collector Voltage
".3.6 .. f-".~~ ~~3'o..... v ..'""1 . ~ ~

E
I
'0
J .1. I TA'25 C
TC"'28S. 'K
2.15
TUNGSTEN _ SOURCE
..
~
...I
ex: ex:
./"
11. 2 .40 _
CJ
0 ... 0
'" ex:
i;l ::l
CJ I
..~
./"
112.05
H::: 1.60
CJ
H::; '.20
E ~
is CJ
I
2
'ex:"
ex: ex:
!t
V
~-
H ::.0.80 H ::. O.
~o mW/cm I I
E
20
.
VeE - COLLECTOR VOLTAGE - V
'2
,.
VeE - COLLECTOR VOLTAGE - V
.....
20
Collector-Emitter Saturation Voltage V8 Collector Current
..
...
ex: ex:
'0
CJ
...
0
'" ex:
~
II , / ..... V - Ef-l!/ i t; '.// ;/~ r--ot.(C''' ~\~ _ ~~'

:r
..
...
ex: ex: ex:
CJ
Collector-Emitter Saturation Voltage V8 Collector Current '0

E
~.,y
'"
is CJ
'll/
o
V
TA~25~C
g
i;l
TC ~ 2854"K TUNGSTEN
=I;~~~/ ;;
~y
I
, tJl B-i
/
I
,[/
I
V
g
f()
1/ /
J
o~
I ,
TA::' 25~C TC 2854~K TUNGSTEN
= ;;; Ii
J.
ISOUI"CE I
0.4
08
'2
VCElsat) - COLLECTOR EMITTER SATURATION VOLTAGE .. V
f--
;;;
Ii
20
J.
04
ISOI["CE
I
08
, 2
veEI t} - COLLECTOR - EMITTER SATURATION VOLTAGE - V
Angular Re8pon8e
Collector Dark Current V8 Temperature
,""
VCE
1. 5.ov
::l ex:
.. .. z
I
VI
11000
I
~ ex:
100
V
V
Vc;.o ,c;
/
..
>
ex:
.'" :
CJ
ex:
'0
~
I
1.0
o.
0.0
V
0
20 40 60
~C
V ,
20
80
100
ANGLE DEGREES
TEMPERATURE -
4-17
FPT120 Curve Set
Relative Spectral Response

'00 90
Rise And Fall Time vs Collector Current
..
I
80 70 80 50 40 30 20 '0 300
/
/
\ \
.
;:
w :Ii
'00
\
80
" I
III 0:
0 "-
co
f"
.~
w :Ii
\
;:
II:
80
~1~ ~
1"-I'.
'.0
v6c!Uv
II
TA =- 25C
40
\
"00 , 300
!!
w
I
.:r
500
A
20
700
900
nm
it I'IT~
'0
'00
0.'
WAVElENGTH
IC - COLLECTOR CURRENT - mA
Photo Current Characteristics
,:. ::: 0 0 0 '" " "" '" 0 ~ 0 " 1; 0

~
ILLUMINATION - Ie
0
. . :;; ,:. .. .. '" .""

~
,:.
..;
oj
g "
.."
,:.
:;;
IRRADIANCE .. mW,cm
4-18
FAIRCHILD
Curve Set number T107

NORMALIZED DC PULSE CURRENT GAIN V8 COLLECTOR CURRENT
5.0
I
~
!!
~VCE1.0V
~VCE'lOV
: ,
;
III
--- -- I-- - ~~-H} 1.0 f--- TA' 'I5'C
TAl. lOO'C
I
!
>
r:::: - --rI I
--
---
-----
.\ A Ia!fC...-_
1-:::::. . -
-1.0
--
--
f--.."', -" ----....

\ \
, ,
\ ...... 1\
t
\
I'-.
I \ I I
I I I I
0.1 0.01
0.1
10
100
Ie COLLECTOR CURRENT - rnA
,
100
COLLECTOR SATURATION VOLTAGE V8 COLLECTOR CURRENT

~
BASE TO EMITTER "ON" VOLTAGE V8 COLLECTOR CURRENT

I.
=:-
IC . 2OIB-+-++H-~+H,-+-+a+--I
o. 9
~ ~ct I I
\.0 ~
0.20
H-t+H++++--+-+-+++-+-I-ll+H
fA' lOObC fA 2S'C,.p.-1. r ''{//-AH+--I
m 0.8
~ 0.15
II +++--I H+Hi-+-f-H+TA '4O'C1-,i'-,.Jilw.+10
1.
io.os e!ig~i~frrtttutl
Ie . COUCTOR CURRENT rnA
~'
!
I
e 0.4
O.l
1
~ i
g 0. 7
0.6
o.S
10-"'"
0.2
0. I
MAXIMUM POWER DISSIPATION V8 AMBIENT TEMPERATURE

800 700
~
I
0.1
0.01
1.0
10
Ie COLLECTOR CURRENT mA
MAXIMUM POWER DISSIPATION V8 CASE TEMPERATURE

1.4
Tj.2
1. 2
'\
I
~
~18
f\.
..........
""0-18 1"-
" ~r\
100
'"
f'\
"'\
T0082
100 0
25
50
75
"'" '\
125
t-......
........
o. 2
r--....
200
150
175
1\ "- r'\. 1\ ~ 1\ ~
TA AMBIENT TEMPERATURE "C
TC' CASE TEMPERATURE C
4-19

BASE TO EMITTER "ON" VOLTAGE va AMBIENT TEMPERATURE
0.8
CAPACITANCE va REVERSE BIAS VOLTAGE

10
0.1
.~
""',,"I,
5.0
~~
~
~6
I
g
0.6
O.S
""
-20
~'"
~I ~
c.
-'.~ ~ "-f.tc P.fc,,~ ~

TO BAst
COi./[CTOII
~P.fc",,--t-
/ /10 ....- ~~
./,;-- I--
<.
0.4
..
!I.
II.., ...
~ =VCE '10V
O. 3
-VCE ' 1.0 V
~"
40 60 80
'5
'0
+
i
i
10 50
~
100 120
-40
20
O. 1
0.1 1.0
III
TA - AMBENT te.ERATURE OC
REVERSE BIAS VOLTAGE V
COLLECTOR CUTOFF CURRENT va AMBIENT TEMPERATURE

10
CONTOURS OF CONSTANT GAIN BANDWIDTH PRODUCT

50
'T MHz TA .~Q
Vca' ,
213
~CBO
V
~ ~
>
0
V
/
/
10
~
>
t
260
1\
~j
5.0
240
I:j
/V
TA AMBIENT TEMPERATURE -
1.0 0.02
Ii
Ii!
0./
!i!
0.05 0.1
0.5 1.0 2.0
~\~\~ ~ ~
5.0
220
10
20
oc
Ie - COlLECTOR CURRENT mA
CONTOURS OF CONSTANT NARROW BAND NOISE FIGURE

lOOk
[, "
1"-. "
" '\
J
t.
25'C VCE ' 5.DV
I '10Hz
~~
I",
'\ '\ I" ,"\ '\. !~ '\ 1\ 1'\.'\ A ~

'Jo.. ~O\
~N'~
'\.
\
~. .
I.Ok
.........
.......
.......
"
V iJ
" '\ ,\1\ \."

, 1\
,/
0.5 1.0
.......... 100
0.01 0.05 0.1
Ie - COlLECTOR CURRENT - mA
4-20

100' 50'
TA - ZS'C VCE ' S.OV
NOISE FIGURE VB FREQUENCY

9.0 8.0 7.0
'-l.OkHz
NF IdBI
I:l z
10.
S.Ok
"
r-0.1lS
~ t'-, I\-: ~~
:J"<I>'
'- '-.
I\.. Nt ~ "Ii I\.. ~"

~
~
if
" i'- ~~ ...... loOk t'....

500
r-....
~" "
-..: ''II
IT~ _~'cil
VCE ' S.OV
~~ i
r----...
,
1.0
15 ~
If t:
!I:
6.0 5.0 4,0 3.0 2.0 1.0
100 0.01
\
10 100
Ie -100i1A. R, -1.0'0
le-l~,
R -10.0
10'
V
100. 1.0M
0.1
0.5
1.0'
Ie COlLECTOR CURRENT mA
f FREQUENCY - Hz
4-21
FAIRCHILD

NORMALIZED DC PULSE CURRENT GAIN va COLLECTOR CURRENT
5.0 rYCE '1.0 Y
i ,
,
!
, iI
II
,k--: ~
,
...1.0
I
I
~'I00'C
J
TA '25C
...........
""
0.1 0.1
I I
r-..
I
10
"""1
i!
"'N.
T A ' -55C
I
100
'1
COLLECTOR SATURATION VOLTAGE va COLLECTOR CURRENT o. 6

>
BASE SATURATION VOLTAGE va COLLECTOR CURRENT

1. 2
I.. 1 'C 101 8
i
~
iii
O. 5
I
55
Ie '
:::- 1. 0
.1; 10'8
~ 0.4
J e
OJ O. J
~.
II I
I
I
100'C 55"C
!
~
OJ
> O. 8
r' i
~
o. I o
0.1 0.2
~ ~.e
2.0 5.0 10
A~
20 JO
! o.
III
:I o. 4
-0.2
..- ...
~
.s.
f-
-r;;s. f.-"" V \iff~
J o. 2
0 0.1 0.5 1.0 2.0 5.0 10 20 50 Ie - COLLECTOR CURRENT - mA
0.5
1.0
ac -COLI.ECTOR CURRENT - mA
MAXIMUM POWER DISSIPATION va AMBIENT TEMPERATURE

800
MAXIMUM POWER DISSIPATION va CASE TEMPERATURE

1.'
2
'\
--~t::
~
~O-92
100
10-12 '\
H
~
----'\
~ ~ ~

0o
~
"\
~ ~ ~ ~
o. 21-- ...='0-72
H
~
oo
r-r-_~ n _
TA -.u.ENT TEMPERATURE "C
TC - CASE TEMPERATURE - e
4-22

CAPACITANCE VI REVERSE BIAS VOLTAGE CONTOURS OF CONSTANT GAIN BANDWIDTH PRODUCT
12
>
10H--t-+++-~-+~~-+~~-H
I
;:
8,0 6.0
I+~~~~~~~
g
0.01 O.Ol 0.1 O.l 1.0 l.O 10 3D 50
,0H-~H+-+-+-+\+
Ie COLLECTOR CURRENT rnA
COLLECTOR TO BASE DIODE REVERSE CURRENT VI TEMPERATURE
100 MHz INPUT ADMITTANCE VI COLLECTOR CURRENT OUTPUT SHORT CIRCUIT
, I
1
t- Vel
20
I
I5V
17
V
/
11 2, 0
g
~
5, 0
I, 0
0, 5
V
25 75
100
0, 21,/
0, I
125
150
tc COLLECTOR CURRENT - rnA
TJ' JUNCTION TEMPERATURE "C
10.7 MHz INPUT ADMITTANCE OUTPUT SHORT CIRCUIT

2.or-------~-~--~
COLLECTOR CUTOFF CURRENT VI REVERSE BIAS VOLTAGE

0, I
f ' 10.7 ""'Hz
VeE' 10 V
1.6
T A" Z5C
1 D,IIS
1.2
I !
e ~
~0-~2~.2-~4.70-~6.70--.8~.0~~10
0,02
0.0I
j;'"
0.81
r'ODS
V
/
0,00I
H0,002
":1
4,0
8,0
12
16
20
Yes COLLECTOR TO lASE VOLTAGE V
4-23

INPUT ADMITTANCE vs FREQUENCY OUTPUT SHORT CIRCUIT
JO
10.7 MHz REVERSE TRANSFER ADMITTANCE INPUT SHORT CIRCUIT
IC' 5.0mA
5t--vCE'IOV
20
5
I
i
I 9;1
i
i
!
~~
0.10
r--'-'~-'--'---'-"'-'-""--'
!
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----
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, 10. / MHz _-1---'--+ "VCE'lOV"',

0,04 r--+---+---r-t-~+-...,--I
0.01r--+---+--t-.l--t---I
-9rel
I
500 1000
10
i
4.0 6.0 8.0 10
20
50 100 200 r FREQUENCY MHz
100 MHz REVERSE TRANSFER ADMITTANCE INPUT SHORT CIRCUIT
REVERSE TRANSFER ADMITTANCE vsFREQUENCYINPUT SHORT CIRCUIT

6.0
IC" 5.0mA
VCE '10V
i
i
0.1
-b,,/
5.0
1
a.os
-gre'
4.0
/
II
!
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I m
ii!
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iii
3.0
1.
V
/
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200
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. 0.01 0.01 L--~--:"":c--,L,..--:,-:-----:,. o 1.0 4.0 6.0 8.0 10

Ie . COllECTOR CURRENT mA
1. 0
/
0
Ii! Li
100
10
20
50
500
l/
1000
t FREQUENCY - MHz
10.7 MHz FORWARD TRANSFER ADMITTANCE OUTPUT SHORT CIRCUIT

120r--~--,~-,-~,-,-,
100 MHz FORWARD TRANSFER ADMITTANCE OUTPUT SHORT CIRCUIT
i 100~------~~--~~
, ' 10./MHz
80
i
i
~~.-r-----~-~-~-~
i!
10
4.0
6.0
8.0
10
ac . COLLECTOR CURRENT mA 4-24

FORWARD TRANSFER ADMITTANCE vs FREQUENCY OUTPUT SHORT CIRCUIT
11 Ie - 5.0 mA
OUTPUT ADMITTANCE vs FREQUENCY INPUT SHORT CIRCUIT

IC VCE
~
5.OmA
f_--,~-_---+-_---:VC:E . 10 V
IOV
.ll
10
E E
i
<
8.0
6.0
is
~
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I FREQUENCY - MHz
4.0
1.0 0 10
10
50
100
100
500
1000
f FREQUENCY MHz
100 MHz OUTPUT ADMITTANCE INPUT SHORT CIRCUIT
10.7 MHz OUTPUT ADMITTANCE INPUT SHORT CIRCUIT
~ E
0.15
f----+--+----f-----:.\--""'---I
~ 0.20 f_-_+-~oI--'~-f_-_+----1
5 I-~~+---+----I---+--~
<
4 0
0.15
I
8.0
10
NOISE FIGURE vs FREQUENCY

6
4
1
!\.
I I
II
~
~
0 1
8. 0
6. 0
[\\
\
4. 0 1. 0
0
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RG
1000, Ie = 3.0 rnA, VeE -,6.0 v
RG 4000, Ie 1.0 rnA, VCE ' 6.0 V
.001.002 .005 ,01 .02
OJII
,5
1.0
r IIU' I
2 5 10
20
5,0
100
200
500 10lXl
I FREQUENCY MHz
4-25

NEUTRALIZED 200 MHz POWER GAIN AMPLIFIER PERFORMANCE
2
500 MHz OSCILLATOR TYPICAL PERFORMANCE

100
VCB ' 15V TA 25'C
i v..,...,
i
i
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a
8
II
8.0
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16
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4.0
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20
20
8.0
12
16
4-26
FAIRCHIL.D
NORMALIZED DC CURRENT GAIN VB COLLECTOR CURRENT
" IE
II!
u
5V
!!i
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...... ........ .......

p
.......
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15V
~~Vv
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Ie . C?OLLECTOR CURRENT mA
TA"'I00"C - - T A = 25C
1000
COLLECTOR SATURATION VOLTAGE VB COLLECTOR CURRENT

~
BASE SATURATION VOLTAGE VB COLLECTOR CURRENT
~ i!I o. I-I+IHH+H-+-+Ht-++t~
1.0
OB
! 0.7 ~ 0.61-61:.,.,..",\0
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10 1(10 1000 10000
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., 0.3
=<
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p. ..
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10
100
tc COLLECTOR CURRENT mA
MAXIMUM POWER DISSIPATION VB AMBIENT TEMPERATURE

800
MAXIMUM POWER DISSIPATION VB CASE TEMPERATURE
r= ~..
I I
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I
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: ill
is
1.0
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0.8
'r\. I\
2
'00
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f
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o.
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i
50
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\
100 125
I
0 25 50 75
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2S
150
175
200
00
75
100
1\ 1\
125
160
175
200
TA' AMBIENT TEMPERATURE OC
TC' CASE TEMPERATURE - C
4-27
Typical Electrical Characteristic Curves. 25 C Ambient Temperature unless otherwise noted

COLLECTOR CUTOFF CURRENT vs COLLECTOR TO EMITTER VOLTAGE COLLECTOR CUTOFF CURRENT vs COLLECTOR TO EMITTER VOLTAGE
1~r-;-'--r-r-;-.-'--r-r-r-.-,
I
~
u
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u
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1.0
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!
o
a
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1.0 t-:+-1-~~-+-+--i--i~t-t-i-,
0.1 .............I...--'--'-....J..-'-'---"'-'-:':-""--'
10
20
30
40
50
60
VeE' COLLECTOR TO EMITTER VOLTAGE - v
Yca COLLECTOR TO BASE VOlTAGE V
BASE TO EMITTER ON VOLTAGE vs COLLECTOR CURRENT
GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT
~ C
IE
i c
Z
300 2S0 200 ISO 100
~
~
:l
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o
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CJ
!::
so
~ O~~~-'--'-~-L-L~'-~WW~ 1.0
01 10 100
Ie COLLECTOR CURRENT
1000
mA
SAFE OPERATING AREA

10
CAPACITANCE vs REVERSE BIAS VOLTAGE
50 , 0 S
i
...... t ..... .....
SEE NOTE 3
II I I Ii
_I,s CICON61TI'ON 3 SEE NOTE 3
+
~.
'S 25 C CONDITION.. 3 ~.CASE
,Ht~-t-+!frj~ .
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25 35
f-i-+,-+t---lf-++-++ ro
100
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=
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00 1
01
I
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'
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5.0 10
l' J
I
0.2
i-ttt:t~
0.5 1.0 2.0 5.0 10 50
REVERSE BIAS VOLTAGE
VCE COLLECTOR TO EMITTER VOl. rAGE Y
4-28
SWITCHING TIMES vs COLLECTOR CURRENT

'000
VSE1QFFI' 4 7V
TA
]SC
500
ISION) IS(OFFI
'c
10
- f----
200 100
50
!'-- I--
"
20
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~~
t--
I-
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"
"
t - r- >--
--
f--
r-~
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- t-- t-- t-12
14
'0
T,
I
o
02 04 06 08 10 16 18 20
Ie . COLLECTOR CURRENT - A
4-29
FAIRCHILD

EMITTER TRANSITION AND OUTPUT CAPACITANCES vs REVERSE BIAS VOLTAGE s. 0 CONTOURS OF CONSTANT GAIN BANDWIDTH PRODUCT
..
........ t--
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c.
or-0
If"..
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0.1
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10
so
REVERSE BIAS VOlTAGE V
DELAY TIME vs BASE TO EMITTER "OFF" VOLTAGE AND TURN ON BASE CURRENT
-6.0
w
so
RISE TIME vs TURN ON BASE CURRENT AND COLLECTOR CURRENT

- Vee -l.OV
//
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0
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181 - TURN ON BASE CURRENT rnA
10
100
COLLECTOR CUTOFF CURRENT vs AMBIENT TEMPERATURE

100
SWITCHING TIMES vs COLLECTOR CURRENT

f. ..
I- Vea zov
0
/'
./
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or
/'
V
./
IV
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ISO
zo
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ZS
so
7S
100
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1.0
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so
TA' AMBIENT TEMPERATURE "C
"
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100
4-30

SWITCHING TIMES vs AMBIENT TEMPERATURE STORAGE TIME vs TURN ON AND TURN OFF BASE CURRENTS -I z Ie 10 ,nA t Vee "l.O V i
" Ie ::.10 mA.I A,-1.OmA,1 82 \It-I.SmA V

12 10
vcc "l.OV
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10
TA AMBIENT TEMPERATURE - C
tel - TURN ON BASE CURRENT - mA
STORAGE TIME vs TURN ON AND TURN OFF BASE CURRENTS

-I 0

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- -6. 0
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Vee "l.O V
15
20
4.0
6.0
1.0
10
12
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181 TURN ON BASE CURRENT - mA
181 - TURN ON BASE CURRENT mA
FALL TIME vs TURN ON AND TURN OFF BASE CURRENTS

-6. 0
Ie 10 rnA

-IZ
'C 30mA
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'5.0
Vcc"l'OVI
I
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4.0
6.0
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lZ
181 TUAN ON BASE CURRENT - mA
la 1 - TURN ON BASE CURRENT - mA
4-31

NORMALIZED DC PULSE CURRENT GAIN vs COLLECTOR CURRENT
5,0
f---V'CE 5 v
II
i
I
II
I
I---t""
r- l"- TA
l""=-
125C
TA 65'e TA " ~5~e, TA " I-S5"C

I
J
i
l'
o. 1
0,1
III
1.0
10
Ie . COlL.ECTOR CURRENT mA
100
1000
COLLECTOR SATURATION VOLTAGE vs COLLECTOR CURRENT

5,0
BASE SATURATION VOLTAGE vs COLLECTOR CURRENT
Ie' lOla
"
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~
2.0
, I,~ I r Ie " lOla
~
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L
2
I
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t;
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r- V
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0, 1
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10
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F +-i
1.0
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1.0
m-
100
10
100
Ie - CCiLLECTOR CURRENT - rnA
Ie - COlLECTOR CURRENT - mA
MAXIMUM POWER DISSIPATION vs AMBIENT TEMPERATURE

800 700
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE

1,4
1,2
I--
I--
T0192
'J
r- ~'8
100 0
~
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"-
~L "'" "i'.. ~
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10-92
0, 2
25
so
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75 100 125
.........
1S0
175
'-.... 200
25
50
75
"'\ "~ ~ "'\ ~

100 125 150 175
200
T. - AMBIENT TEMPERATURE - OC
TC . CASE TEMPERATURE - C
4-32
Typical Electrical Characteristic Curves
25 C Ambient Temperature unless otherwise noted

FALL TIME va TURN ON AND TURN OFF BASE CURRENTS
.J)
f-'e -Ull mA vee -l.OV
/
/
V
V
b=--+..
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0
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20
181 TURN ON BASE CUfiRENT ~ mA
4-33
FAIRCHILD

NORMALIZED DC PULSED CURRENT GAIN va COLLECTOR CURRENT
1.5
~
~
1.0
~ 0.7
ffi
---~,--+--
1.2 - ,
i
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I
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10
I
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50
Ii i
j
:
loo
500
H1000
: Iii I I
l.O
100
COLLECTOR SATURATION VOLTAGE va COLLECTOR CURRENT

BETA' 10
1

1.4
I
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1.2
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0.8
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100 100
V
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400 1000
0.6
0.4
1.0 1.0
4.0
10
10
1.0
3.0 5.0 10
Ie - COllECTOR CURRENT mA
tc . COUECTOR CURRENT mA
""
i
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.t~":"'- "/
II
50 \00 300 500 1000,
>r1I
JO

800 700 600 '00
400

4 . 3.' ~ 3.0 2.' 2.0
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300 200
'00
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100
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25
50
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50
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150
150
~~
100
200
25
75
125
TA' AMBIENT TEMPERATURE
_C
TC - CASE TEMPERATURE -
4-34
"
~
175
"\.J
200

BASE TURN ON VOLTAGE va COLLECTOR CURRENT
1.0
NORMALIZED DC PULSED CURRENT GAIN va TEMPERATURE

1.6
i<
veE
0 5.0 V
VC[05.0V
1.1
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0.4 1.0 4.0
V
10
40 100
400
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i
1000
CURRENT mA
0.6
0.2
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Ie . COLLECTOR
~h ~ \II~
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IC'\j/
V
1000 ",A
I-""
I I
40 BO
110
T A AMBIENT TEMPERATURE C
Ccb AND Ceb va COLLECTOR TO BASE REVERSE BIAS VOLTAGE

100
20f---+--+--+---+--+-1--+-----j
1--.300 MHz 100 MHz 150 MHz 100 MHz
II
'2.0
0.'
I
100
r--
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1~
le=olc=b
0.2 0.5 1.0 2.0 5.0 10 20 50
0.1
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1.0
10
Vcb' V.b REVERse BIAS VOLTAGE V
4-35
DELAY TIME vs TURN ON BASE CURRENT AND REVERSE BASE TO EMITTER VOLTAGE
7.0
RISE TIME vs COLLECTOR CURRENT AND TURN ON BASE CURRENT

f---t--+-+-H-H++---
l!i
>
6.0
18 ns
;,0
4.0
~i! _
;
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3.0
2.0
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0
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< E
120
80
f---+--+--r-I-+H++------7'r--+-+-1
Ie 100 rnA Vee' JO V
10
IBfON) TURN ON BASE CURRENT mA
;0
100
300
;00
SWITCHING TIME vs COLLECTOR CURRENT

100
;0 30

tOO
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80
...
ts
20
::::--.
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15ns
100 rnA Vee' 30 V /
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tr
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20
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20
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V VJ...- ~
1.0
f.-r
r-r
100
200
300
;00
800 1000
60
80
tOO
Ie . COLLECTOR CURRENT - rnA
IB(ON) - TURN ON BASE CURRENT-rnA
4-36

200
STORAGE TIME VB TURN ON AND TURN OFF BASE CURRENTS

200
rlolns
160
!
ID
~ ~
~
120
I II
I
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15
ns/
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Vcc 30 V 160
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ns
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7
,...,
80
I /I
I j
!
V
V f-""""
40 ns ..........
50 ns
40
/1/,
II V /
,.....
40
,..., .......
so
40
so
120
160
200
120
160
200
talON) TURN ON BASE CURRENT rnA
talON) TUAN ON BASE CURRENT rnA
FALL TIME VB TURN ON AND TURN OFF BASE CURRENTS

100
FALL TIME VB TURN ON AND TURN OFF BASE CURRENTS

200
1lI
~
. i ."
~
u
12
SO
Jsj
./ / /
V V
sls
160
nnV
/
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r120
1/6 lsns
/
A'
/
Ie
'/
! soolmA
Vcc 30 V
60
I '" :"
40
Ii:
20
I V IV
20
40 60
Ie 100 rnA Vcc 30 V

14 ns
SO
V
/
40
Vv
V
40
80
s.O)!..
f...- I-""
200
12 ns
SO
100
120
160
IB(ON) . TURN ON BASE CURRENT rnA
IBION) TUAN ON BASE CURRENT rnA
4-37
F=AIRCHILD

NORMALIZED CURRENT GAIN vs COLLECTOR CURRENT
w
BASE TO EMITTER "ON" VOLTAGE vs COLLECTOR CURRENT

1.0 "-"Tr-1r-rTTr
1""':.~,:;~~4'+-+--+-+++---1 ~ 0.6 T ,11""''""'' ~~c'H\'OH'I-tt-+-+-+tH ~ ~++n-I+-~I~~-H~~++H---l 1 ~ 0.4 K++l , -+~~~-H~~++H---l ~

, 1 _ .. '
0.8
I I!-r-TTlT I-r-TTlT-' Ii)J y

I..
--
0.1
t
0.1
..
1.0
10
100
1000
BASE TO EMITTER "ON" VOLTAGE vs AMBIENT TEMPERATURE

0.95
~
O,B5

800
~ " ~, ~ , r-.... m
......... .........
'"
K t...
VeE' 1.0 V --- VC[ 10 V
I,
700
TO!92
0.15
e
:::
~
r-....
0.65
-...;;.;
I. ......... ~
1';;;'"
..........
'C~50mA
0.55
'"
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..........
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I
0.45
-40 -lO
'I . i1I
~lOmA
mA
"1
100
0
~.'8
'"'"
.......
i\. ~
~ t-.....
20
40
60
80
100
120
25
50 75 100 125 150 TA - AMBIENT TEMPERATURE _C
'\ ....... ..........

175
200
TA AMBiENT TEMPERATURE "C

1.4

~
Ie == 1018
1.2
I--

o. 2
0
i\ 1'\ "I\..
r0-92
2S 50 75 100
"L 1"-
" ~ g 0.4
~ Hrl4+~4+++l-+~H+~Hffi~
~ ~.3 1-++-++t--t-+++++-+++--Ht---t-!IiH~
t
~
0.2 Hrl-++t--t-+++++-+~Ht---f-1H-+~
TA = 2S"C
"'-1'\
'f',.
125
1"'-
"-
g
U
TA" l00"C
150
115
200
Te CASE TEMPERATURE C
4-38

ALLOWABLE POWER DISSIPATION vs AMBIENT TEMPERATURE
100
BASE SATURATION VOLTAGE va AMBIENT TEMPERATURE

~
I\;..
~
I,D
80
i"
i!;
60
0..'\ \\ ,'\.
.....
~
r-~..()
p..;::i'-.2'-r--
o. 9
f---=t'......;:t>'~=--t,
40
\\~~ \:~ (1;;.. .,."

'(
~ o. S f""'IIIkc"-t-
~:f>
-0
?>~-
~~
"
20
~~ ~
1\ 1\
\
25 50 75 100 125
"150
~- f - -
~
i
0.6
/---+-"--j---c--L.".."!....d--l~;:t,...Lj
'\
175 200
0.5
f--+-+--+-+--+--P....,..,...I.-I
-40 -20
20 40 60 80 100 120
TA -AMBIENT TEMPERATURE"C
TA . AMBIENT TEMPERATURE _ C

10
CAPACITANCE VB REVERSE BIAS VOLTAGE

~EMI""E'
C
3 g
0,8
f-t........,-l'&
5.0
I
Ii TO BAS[ 'CAP
:il
-r--...ACITANC( I
~
~
0.6 ....
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~ u
0.4
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1.0 0.5
I i Ill! 111 Ceb - COllECTO~ To
Il
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!
SASE
: I I .1
CAPACITANCE, IE 0'
1"---"-t-i-+1+-+-++++-+++++--j
.:,
<1
0.1 0.1 1.0

10
I
0.1 0.5 1.0 5.0
I
10
I
50
100
REVERSE BIAS VOlTAGE Y

10k
5k
SWITCHING TIME va COLLECTOR CURRENT
veE' 10 V ~ f 1.0 kHz-+
'000
500
1----
,'\.
,
'0 B~ "'&
,\1 ~'\. I\.! i I'\.'-\

I
"I.
, I,
i l:1
1'..
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II
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500
100
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.
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'. N.
8.0 dB
6.0 dB\ i
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0,1
III
0,01
0.05
0,5
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20 Ie = lOlS1 = 1OlB2
B
'rl
10
r---
1,0
10
VTi V1VEj i i~ i"

2.0 5.0 20 50 100
Ie COLLECTOR CURRENT - mA
1.0
IC - COLLECTOR CURRENT - mA
4-39
FAIRCHILD

5.0
,::= VCE
1.0 V , - _ VCE ' 10 v
:i II
I
iii
.-,,:::: I::":-
--- ~P
0.1 0.1
--
...
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-T A " 40C
,
::---.....
p-
-=-i
1.0 10
..,
ill
,
-\
I
100
!
1000
IC COLLECTOR CURRENT rnA

1.0 'C " 101 8

1.2
':
II
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II
II
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I
10 100 1000
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800 700

4,0 3.
1\.T~.5
600 500 400 300 200 100 0
~'k
5 5
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TO.j.",! \
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-....
50 75 100
I'-.... [\.
125 150 175 200
175
25
r--.... ~ ~
TA - AMBIENT TEMPERATURE _ C
TC CASE TEMPERATURE QC
4-40

BASE SATURATION VOLTAGE vs AMBIENT TEMPERATURE
50

I-c i
Ll
~ g
z
~
~
0,9 0,8
10
!
j
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I,
J1
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I
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PAC'TAlvC( .
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CTOR To
'c or-
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BAst
0.7
0,6
CAPAC,;
I-1,0
:'--." Alves
,I,l_
1
~ 0.51---+--+--+--+-40 -20
20 40 60 80 100 120
~
i
1,0
I
50 100
0,1
0.5 1.0
5.0
10
TA - AMBIENT TEMPERATURE -'C
REVERSE BIAS VOLT AGE - V

10
~
VCB ' 113 VCBO

"--:;;
5,0
/'
/V
L'/
1,
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/'
0,5
0,3
0,0 I 20 30 40 50 60 70 80 90 100
1,0
3,0
5,0
10
30
50
100 .zOO
T A - AMBIENT TEMPERATURE 'C
Ie - COLLECTOR CURRENT - rnA
SWITCHING TIME VS COLLECTOR CURRENT
t ~#H-r+----k:++++ftH ~ ,! i:1 I' I! .

I
-..;..,.,
100
SO
=-=:
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rr ~ If'!,' -----tt.,...-f----:J..-4'-H-t-tH
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10
Ie . COLLECTOR CURRENT
50
100
rnA
500
1000
Ie - COLLECTOR CURRENT
4-41
FAIRCHILD
CUr've Set number T147

NORMALIZED DC PULSE CURRENT GAIN vs COLLECTOR CURRENT
5 0
3.0
!
~
-----_ -.....
1.0
--
----~--.------.-
15
I
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0.5
----
0.3
0.1 0.1 1.0

Ie -COLLECTOR CURRENT mA
10
100

le 101 6
w

1.0
rA ~40"C
I
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10
ti
TA -2SoC
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01
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101 B-
III
100
I
10
!. !
100
0.1
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Ie -COLLECTOR CURRENT - mA

600 100 ~ 600 500 400 300 200 100
f--
~L 1\ '\ \
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3.0
~
r0-92
\
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25
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0.5
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TA - AMBIENT TEJlPERA1\.IRE "C
Tc CASE TEMPERATURE"C
4-42

BASE SATURATION VOLTAGE V8 AMBIENT TEMPERATURE
0.9S
COLLECTOR CUTOFF CURRENT V8 AMBIENT TEMPERATURE

HJO
Ves 213 Ve80
I o.~ !
j
0.55
~ 0.85
I
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0.15
~
(,
10
1/
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v
1.0
~
0.45
M40 -20
D
0.1
./
V
203040 50 60 108090100
TA - AMBIENT TEMPERATURE -"c
20
40
60
80
100 120
TA AMBIENT TEMPERATURE OC
BASE TO EMITTER MON" VOLTAGE V8 COLLECTOR CURRENT
BASE TO EMITTER MON" VOLTAGE V8 AMBIENT TEMPERATURE

0.9 ........ _
__ VeE -l.OV
I !. 0.81-++++-+-+-1-++-+-+..+ ....t!.l>-:;:;..-."':3
~
1.0 0.9 __ VCE - 1.0 V
-=rvCE -IOV ---++++-+-++I+t----j
VCE-IOV
I e
0.11-++++-+-+-1-++"""...., ....+.1"""'""". :f1'ft--i

0.6
f::_:;;;;l;.~......;"""1=t-1+-+--+-ttt--i
1-++-++--+-+++r-f-l-+H---1 0.4 1-++-++--+-+++f-f-l-+H---1 ~ 0.3 1-++-++--+-+++r-f-l-+H---1

0.5
j ::: I-I-+I+-+--H-++--+-++H----I
1.0
I.
100
tc COLLECTOR CURRENT ntA
CAPACITANCE VS REVERSE BIAS VOLTAGE

50

100
I,. 10
~
f.-- COWl-fA!
C
I
u
r-:1.0
~CAPAc ~J Ill, -c IT"NrJ ~
,I_
llilel""~o~~1
t--0
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e,..
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A.I!:f.7 f.IC _._

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0
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rF
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0.1
1.0
10
100
0.1
1.0
10
100
REVERSE lIAS VOLTACE - Y
tc COLLI!CTOR CURRENT mA
4-43
FAIRCHILD

0.1~1
0.1
1.0
10
hFE - NORMALIZED DC PULSE CURRENT GAIN
100
1000

1.0 IC -101 8

1.2
II
:
0.8
TA - -40"e
I,!
: , I
!
II I I TA "100C
~
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0.4
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0.1 1.0 10
100
1 :
0.2
<TA
2S'C 1000
o
0.1
1.0
10
100
1000

800

4. 0 3. 5
~
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r\ TJ.
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100 125
100 0
25
so
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150
1.
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175
TA AMBIENT TEMPERATURE - "c
'"
200
25
rt: '" """ '"

t'---..
r--..... f-.... r--....
125
'"'"".........
75 100
~
200
50
150
175
TC CASE TEMPERATURE - "C
4-44

100 50
eb - EMlrT C bERT ~ 08~S[c~p.!
t:t-+-!:hW II
Cb
r10 5.0
-COllE~~b~lfl
c~p~
I ~clr~Nc~
r-
Clr~",c ~I;o-
( ~ .,?,
l.0 -40 -20 20 40 60 80 100 120 0.1 l.0
10
50
TA - AMBIENT TEMPERATURE
_c
REVERSE BIAS VOLTAGE - YOLTS

c
EMITTER CUTOFF CURRENT vs AMBIENT TEMPERATURE

1000 I-,VEB -4.0V
i
0
100
VCB '213 VCBO
/'
V
~
i}
~
10
./
100
V
./
./
10 l.0
~
0
~
II
/V
./
l.
:il
oV
O.
IV
20 3D 40 5060 70 8090100
TA AMBIENT TEMPERATURE _C
O. 1 25
50
75
100
115
150
T A AMBIENT TEMPERATURE _ C

100
~
~ c
~
~
10
~i~ ~ ~I~ -" :1 ~ f-~

! ;
"
0
I
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VCE'IOV
f -1.0 kHz
e
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/ 150MHz-
'-" ~120MHZ
I
l.0
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l!XJMHZ_
~ ~
12
lk
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0.1 l.0
I
-100
1000
10
Ie - COLLECTOR CURRENT mA
mA
4-45

5110
r---Is
100
so
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1"--
1--
10
5,0
~
IC 100 Bl 101 Bl Vee' 15 V 100
--
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1.0
1110
5110
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4-46
FAIRCHILD

0.1~ "rm
0.01 0.1
I I
1.0
11(\: ~\' r\
I 10
I
/
100
Ie COLLECTOR CURRENT mAo

800 700 800 500 400 300 '00 100
BASE EMITTER "ON" VOLTAGE va COLLECTOR CURRENT

1.0
:; 0.9
I
f--
I
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1'\.10-' , i ! !\. , '\.!

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08
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0, 1
o
0.01 0.1 1.0 10 Ie . COLLECTOR CURRENT mA
. 100
COLLECTOR SATURATION VOLTAGE va COLLECTOR CURRENT o. 5

Ie' 201 B

1.
il
I
,
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I
1.
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TC' CASE TEMPERATURE "C
4-47
BASE TO EMITTER 'ON' VOLTAGE va AMBIENT TEMPERATURE

0.8

10
---VCE '1.0 V - - V CE '10V
r---- ::::=t:
, '. r--+---j
Ceb
5.0
~ [MinER TO BAS{ CAPAC:iANCE. IC 0
'5
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=
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~-..J
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1.0 rnA
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=
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O. 3 -40
Iii
1.0
REVERSE BIAS VOLTAGE -
I
10 50
-20
20
40
60
80
100
120
0.1
NOISE FIGURE va FREQUENCY

16 14 12 10 8.0
6.0

10k
~~lA\LQ
5'
\
\
VCE 10 V
f = 1 kHz
1\
1\ 1/
~
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l'I
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k
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r-...
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0.1
1\ \\
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1.0 10
4.0
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2.0
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10 100
100r"'lly
,..... J
l'
10 k
~B
!I
Y
100 , 1M
. 100 0.01
F - FREOUENCY - Hz
4-48
FAIRCHILD
Curve Set number T ,162

NORMALIZED CURRENT GAIN va COLLECTOR CURRENT
I

1.0 Ie -10 IS 1. 5

Ie -10 IS
~ ~
I I
=:-
0.8
I "
$
i
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0.6
1/1
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0.4
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0.2
0 10
20
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500
1.2
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0.6 I-
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---
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0.3
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,i
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f---
50
100
200
10
20
~t +i i +Ht
i
-----
50
100
200
Ie . COLLECTOR CURRENT - mA
++
500
MAXIMUM POWER DISSIPATION' va CASE TEMPERATURE

800

1.4
700 600 500 400
1.2
f--
TO-92
~
:g
;S
'\
f--
.,. "
~
1i'
300 200 100
I".
........
i
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1.0
0.8
1'\
TO-92
T0-18
[\..
i'-.,l\.
ffi
O. 6
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o. 4
o. 2
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75 100
"-
'"" j'\
o
25 SO 75 100 125
t----.
........
I'--200
150
175
25
SO
125
I".
'"
~
175 200
150
TA - AMBtENT TEMPERATURE - "C
T A' AMBIENT TEMPERATURE -
"C
4-49
Typical Electrical Characteristic Curves 25 C Ambient Temperature unless otherwise noted DELAY TIME va BASE
COLLECTOR REVERSE CURRENT va AMBIENT TEMPERATURE
-5.0
EMITTER OFF VOLTAGE AND TURN ON BASE CURRENT
..
-4.01------rl----1--+-~+-__>'_l
!
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11.0
I--,---t-
~
~
-30
! ~=l==::~===_t:::.=::l=
0.1
; -2.01---I---J'-t--I--
~.
0.01 2 ' ;-5---f.50;--'-7~5--L-,-!:IOO::--c......,12!:-5~~I50

TA' AMBIENT TEMPERATURE
-1.0i<--I---7'-+--+-+->'Y----,!<-1_!\H--l
'"C
.. , TURN ON BASE CURRENT mA
RISE TIME va COLLECTOR AND TURN ON BASE CURRENTS

100 ,---,---,--r-T"TTT'TT---'---'--'--'
STORAGE TIME va TURN ON AND TURN OFF BASE CURRENTS

-2.5
r-,IC ~lOmA Vee -15V
I 20f----l--+-t~
~
10 f----::::I:.....r"9-t-hrr-ti"c.---+-c
1 - 2.0
I
i
1-1.5
" ~ -1.0
; -0.5
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/
/
/
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5.0 1-=t-----r-+-1H-+-t+-l;"c.---l---l-H
2.ob_"...."OF-H+rt++--+---i-+-l
vi"
o
U r V
0.5
....... ......
1.0
../
~~
o
Ie COLLECTOR CUIIR!NT - mA
2.0
2.5
-181 TURN ON BASE CURRENT mAo
CONTOURS OF CONSTANT GAIN BANDWIDTH PRODUCT (fT)
STORAGE TIME va TURN ON AND TURN OFF BASE CURRENTS

-10 IC ,'30, mA
VC9 = 15V-+--+-I+--+--+-+~---l
1 -8.01--r-+--+--1--t-+---1-rt-+---i
! ~ -4.0 1--i-+--+-7If-......;"'l-+--+-:~-l I
j
-201--.f--Y-.......-+---!.A--I-t-"'t'-i
1-6.0
'C COLLECTOR CURRENT mA
.. , TURN ON lAM CUMENT mA
4-50

STORAGE TIME VI TURN ON AND TURN OFF BASE CURRENTS
-25 r-.--.---r-__r-r-rr--,-"..-.,.--,
STORAGE TIME VI TURN ON AND TURN OFF BASE CURRENTS

-100
r--~--__r---.--,-r---,
Ie :::3001 rnA Vee = 15V
~ -20 f-i--t--+--
F-!--+++--JflC.-t----l
1-80f--+---i-~-t----r-~
i
~
-15 f-+--+---+l-+.i4-
)f<-j--1-7"~
I i3 -60f---i------:
~
~ -40 J-----H'--i--T'---+- -,..-9------"---1
~ -10 f---i-------...-f---I--7'I"--i--
~
11 -50 f--I&"t-~-b....-r=-t-t-r--t---i
~
1I-20J--~~-~~--+---t---4
181' TURN ON BASE CURRENT mA
181 TURN ON BASE CURRENT mA

- 2. S lei >10 IrnA Vee '!SV
0

-10
Ie frl:l30 ,mA
II
;->. '-W"~
V
~
/
/
/
/
-
Vee=
Ii
,,-/
I,
V
./
Sf--
"'I
/
r-<\,
.,'
""to"'/
11
-2.0 2.0
2.5
1/ / /
,/
--..'/ ~
1,"<:) ---.c ,,- V
11-0. 5
0
If
/~
.,"
V1.0
-.,./
/'
./
~v
1.5
2.0
4.0
6.0
8.0
10
1&1 TURN ON BASE CURRENT mA
1&1 TURN ON BASE CURRENT mA

-25 r-.--.---r-__r-r--,--,r-r--r--,

-100
l' -20f--+-+-+-
-loy-t-t--:,...,--t
~ -80 f-+---t--r-i---+-7f'---1--r-"'7"4
Iii
u -15
~ -10 f-V'+---t----t---+--,=--!""'--+-------j
!
I
~
1-60 t-----+---t-+.
-40 J--+-..y.-t-.,..'--t~-,.
1&1 TURN ON BASE CURRENT rnA
181 TURN ON BASI: CURRENT 1M
4-51

SWITCHING TIMES COLLECTOR CURRENT SWITCHING TIMES AMBIENT TEMPERATURE
VB
VB
12,..--,--,--,---,---,----,
,If =
101~1 = 101 B2
p......_+--I-+--1m-l-t'v"ee = 15V
lol---I---I--b-~~i------I
S.Or9::::=j==I==t=1=j
6.0 ~-+--6_"""'=-i---i-----1
tf
Ie
;l:<~OO rnA
I
'82 Rl 130
mA
4.0 i---t--t-ISl 130

2.01-_j..-.:t.!!.d
mA'1
VBE(O)= -O.5V, Vee = 15V
+_--!-=--!-=;;;;j:::=;;!
ILO-~2~0~-L~~~-~~-L~500
~L5--L-~5LO--L-~--L-~100
T A AMBIENT TEMPERATURE "C
tc . COLLECTOR CURRENT mA
4-52
FAIRCHILO

NORMALIZED DC PULSED CURRENT GAIN VB COLLECTOR CURRENT
I
Ie - COLLECTOR CUflRENT mA

1.8
~ ~ ~
BETA -,sOO.,lOoo I I
BASE SATURATION VOLTAGE VB COLLECTION CURRENT

1.6
BETA -500,1000
1.4
!
I
! I
I
II
I
i
~
1.0
I
I
1
i I
I
\
1.6
I'i
g i
~
1.1
LU
I
;A' -40'C TA 'I5'C
TA lOO~C
0.8 0.4
T I !\
~ . /~
10 40 100 100
i~
II
I
I a
III
1.1
V
1.8
TA -4O"C
I-1.4
TTIL
1.0 1.0 4.0 10
r
400
Ff~ T
= i
~
ll-~
ITA -2SoC
V V
/
/
'f
1.0
lJ.H- r-I I
3.0 5.0 10 30 50 100 300 500 1000
Ie COLLECTOR CURRENT mAo
.ll~C
0.6 1000 1.0
Ie . COLLECTOR CURFIENT mAo

800 700 .00

1.'
;
j5
~
~
500
400 300 .00
r:::tsL.
l~
1--
I.'
~
:
1.0
0.8
,,~.
ffi
i
f
"1\.
I
!
i
'\
m
~
0 .
0.'
o.
1\ 1\
25 50
100
o o
00
rn
TA AMatENT TEMPERATURE "C
75 100 125 150 TC' CASE TEMPERATURE C
1\ 1\
175
:tOO
4'-53
BASE TURN ON VOLTAGE vs COLLECTOR CURRENT

1.1
~ii
1.8
TA '-40'C_
/
~
~ ~
go
1.4
- =+ TA "lOO'C'
I - -;,~,~
/I
iiI >
1.0
~
0.6
J-+-r I
10 10 40
V CE 5.0 V
400 1000
1.0 1.0 4.0
100 100
4-54
FAIRCHILD

NORMALIZED DC CURRENT GAIN vs COLLECTOR CURRENT
100
I
!!
"
10
1.0
.-1-
f--
I ~
~~,r'0~
VeE=
1.0~
o. 1
f::::
0.0 1 0.1
f-- - - -
65"C, VeE = tOV
25'C
I
500 1000
I I
0.5 1.0
I I
5.0 10
50 100
it . COLLECTOR CURRENT
no.
BASE TO EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
0.9

100 TA" 25C
I
1
2S"C
./
g
~
7
....... ~
10
1
u ~
/
,3" 30
".3= 10
7
~'P
/[,"
"
1.0
I
P-5
I
5 '?
0.1
!:
iill
1.0 10
11= 10
",~ 25'C - I = 30
.....
,-1 o
100C
....
;. ", OO'c
13= 30
;-
j
100 1000
d .
O.Ot 0.1
0.3 0.1
1.0
10
100
1000

BOO

4
r= i'\~'.2
1
,. 2
01--
1\
f\.
!'.I
I
~L
'00
0
1'\
100 125
o. 2
'"
25 50
1\ 1\
100 125
25
so
75
'\
150
176
lOO
75
1\
150
175
200
TA AMBIENT TEMPERATURE"C
Tc: CASE TEMPERATURE C
4-55

BASE TO EMITTER "ON" VOLTAGE va COLLECTOR CURRENT
1.0
CCB AND CEB va COLLECTOR TO BASE REVERSE BIAS VOLTAGE

100
veE" 50V
~
~
0.8
i
~
06 ;
:1
04
TA "'25C
1-.....
V/ V'
c-
'&
.;.
20
1
~
~,
Ii
Ceb ~IC
I
OJ
1
I
r-
iI
~
u
0t-'-
..... TA lOO'C_
1--"'
5.o
2~
o
0
r-t ffi'E
,.._.;. .
r-t+I--l.
0)
'
! , ~
$
0 0.1 1.0 10
I
5
O. 2HTA::25'C O. 1 ~ N 00
hF'"
1.0 MHz '
'00
1000
~~N
0 0
~~2:&~
Vcb. V.b REVERSE BIAS VOLTAGE V
Ie - COlLECTOR CURRENT mA
CONTOURS OF CONSTANT GAIN-BANDWIDTH PRODUCT

100
TA=25C
COLLECTOR CUTOFF CURRENT va COLLECTOR TO BASE VOLTAGE

1l1U( I
r--+--+ r--- '

lOa
J L- = --t-f-
50
l10MHzl
40 30
'1
-r';:'iooc- -
'0
20
10
4 5
\ 40+-If~,
10 20 3040,50
60MHz,-'"
II
'0
..... f- ~Irc t- r--
100
,11
'00
200
300
400
Yea' COLLECTOR TO BASE VOLTAGE - V
4-56
FAIRCHILD

NORMALIZED DC CURRENT GAIN vs COLLECTOR CURRENT
'a ...--......,-,,.,..--.----r-rl-r l
r--1------r:--r""Ti-'-1----,--r: -'-."'I
.-t"', -..
5V-
~!"irI, - ,
!
~
~ ~1-+-1-+-+-++++---+-c~1 t ...........' ..... " .:t 5~ Jl1.0 ........ ,
~++-jrt---+-+-+++-+---!-+-+_+--+'~.~.-.1..............!... I... , ......

I
--t++~
'
y",:'R/! i I
'v
po
I]
in
i
[>,.'i
,
I
Iii
i
!
ii
'a
I
I
TA: 100'C - _ T A = 25'C o. bL.,_ _'-:':"_"'1.0~J......w...L-...J,-----I-1..J...J..---,-":--L.....LU--::!::-..L-.w..J......c::!. 10000 1000 '00
II
I
1

'a
'I
~
11

1.0
a DOb':-,--'":""0--':,o-~,oJ...o-~,...J.OOO~..-......Jl0000
,a
'a
100
1000

800

1.4
700 800 500 400 30a 200 100
1.2
f-'-
t--
NO'.2
I\,
['\i
t--
15
1.0
~ 0.0
~
~
~
~~.2
i5
I
0.6
~
I
~ ~
1\1
" ;
0.4
1'\
"{
0.2
'\
25 50 75 100 125 150 175 TA AMBIENT TEMPERATURE - OC 200
o o
1'\
TC - CASE TEMPERATURE C
4-57
SAFE OPERATING AREA
'O~~
BASE TO EMITTER ON VOLTAGE VB COLLECTOR CURRENT
__~+-~
__
~+-~+-
__
20 f-~r--+---t
~
15 ......... ~ ........:~ ~\.~~EcN~TNED~TION 3
I
y
~ 10f-~--~+.c--~1~~-r;---~
01f-4---'-+-----f-'..--NH.
! 0.2 f-++++-+-++++-+-++++-+-++-++--~
VeE' COLLECTOR TO EMITTER VOLTAGE V Ie COLLECTOR CURRENT mA
COLLECTOR CUTOFF CURRENT VB COLLECTOR TO EMITTER VOLTAGE
COLLECTOR CUTOFF CURRENT VB COLLECTOR TO EMITTER VOLTAGE ,ooor-~~-r-r'.!....~ .. ~... ~T ... .., ..'.. r ...~ .... '
,'00 ~~+-+-+-+-+-+-++~~-l
I 'OO~L/+-~-+~+-~-+~~
~ a lOH+-+-+-+-+-+-+-+-+--+--+-~
.. -'- == T ,OO"C
~ U
'0
f-+-+-+c:,j.,
~8~
....
1.0
H+-+-+-+-+-+--+--+--+--+--+--I
:u
g '_oH+-+-+-+-+-+-++++~-l
VCE' COLLECTOR TO EMITTER VOLTAGE - V
0"0 ~.......
..-J,'o-'---:':'o-'---:':3Q:-'-:'.o:-'---:,'="o-'--!60'
SWITCHING TIMES COLLECTOR CURRENT
47V 'StOFF)
TA
Yea' COlLECTOR TO BASE VOLTAGE V
VB
1000
GAIN BANDWIDTH PRODUCT VB COLLECTOR CURRENT

400
VBEIQFF) ISION)
25e
--
'e
'00 ''00 00
50
--04
10
3.0
:,
I
~
i
til
~
10
10
~~
!
1,
...- ...12 14 16 18
i:
! ,so
Ii
C!i
;0
~200
I,
r I
01 Ob 08
10
'00
0 0 1.0
~
I
2.0 5.0
L6
~rjl=lrY iC"t"lr
Iii
VCE '" 1 V
=
20
i
!
T! ~ J.c
20 50 100 200 SOO 1000
10
Ie COLLECTOR CURRENT A
Ie COLLECTOR CURRENT A
4-58

100
--t-t- Cab (Ie - 0)
50
'II.
~o
~
~
10 5.0
--
-tt I I
r-I
Ccb (IE == 0)
'I...l.
I
I
---H- --::-:::
-+--
u
2.0
;
,
1.0 0.1
I
0.2 0.5 1.0 2.0 5.0 10 20 50 100
REVERSE BIAS VOLTAGE
4-59
F=AIRCHILO

NORMALIZED DC PULSE CURRENT GAIN VB COLLECTOR CURRENT
;.0
veE 1.0 V - - - -
l.O
VeE"IOV - -
I
~ g
ill
IJ~!lOfC
I
~
1.0
- ::-=+. 0.;
1.0
O.l
~---I
1
---:: - 1.0
-- -- TA -25C
-10
T -life
....
. ..
0.1 0.1
'.
100
Ie COLLECTOR .CURRENT mA

'1.1 >
I~ ! 1011 8
1 Ie ~ 10 I B
Ie' 20 IB
~
g
~
0.8
!
~
0.'
0.7
!' ;A
g
~
~
0.;
'e' ll 18 i!
0.'
...
1
'
~
e
u ~
0.4
'?
0.2
~ . . '.1 ;1 r0.1 1.0 10
~/'~ r~-t>~-
J
800
100
'fftt-
O.l
I I
I
1
0.1 0.1
II
1.0
1000
10
100
1000
ac COLLECTOR CURRENT mA
'.0
3.5

700
---ro-r:\
I
3.0
~
........
-Tf.'
100
,,0-5
'\.1'..
i :.:
;
i
~.
I"
f-- ~18
1.Q
N f\t... ""\
2 1.'
f--
~ i:'r-...
11
o. 5
'\ "' ~
4-60
~
1
",,~
-...... --..
-... "......... r"-.
-........
TA AMBENT TEMPERATURE "C
TC CASE TEMPEFIATURE "C

1.1
~
II:
LO
0.9
0,8
0.7
~
:
~ ~
~
0.6
0,5
0.1
-40 -cO
L....-L_"----L_"------1_-"----1_c:-'
20 30 40 50 60 70 80 90 100
TA AMBIENT TEMPERATURE -"C
20
40
60
80
100
120

sor-~-n-'-'-rr,-,--r,,'-,

so f-3D
30
Ceb - EMlTTER TO
BAS~
CAPACITANCE,
Ie - 0 I
,--
1\
II~M;,
\t
~-
10
s.O
10
J.O
1 L\'\ \ 1z,
\
~
'% \'t '%,...:::;
Ij
LO
J. 0 f-->-j-~~r-+-t-'-r-t--
o.s
t-0.1
(1.1
"l'1t?
3,0 5,0
I",
,,- \
V
10
7~
0
50 100 200
1.0
10
so
LO
30
REVERSE BIAS VOLTAGE - V
Ie . COLLECTOR CURRENT - rnA

soo
SWITCHING TIME vs COLLECTOR CURRENT
100
Is
so
If
'd
10
~'r
s.O
Ie 10lB I 101 82
VCC~15V
1.0
10
50
100
mA
;00
Ifm
4-61
FAIRCHILD

NORMALIZED DC PULSE CURRENT GAIN V8 COLLECTOR CURRENT
,
3.0
f--+--++-+-++I-I+--+-+---+-+++++I--+--+-+++++++--+-+-+'+-'++++1 1
I :
~.tlll~m' II I
1
U !:
!
I
1.0
I i
TA - 100"C
m 0.5 f---+-++-l-++H+--+-H-+++++I-TA _~IC....."""~-""N;rA ;;; 25OC+,0.3
f---+-++-l-++H+--+-H-+++++I--+-+-H~~.~~'~~~\H-+++J-++I
----VeE'" 1.0V
--VCE=10V
~
0.1
1.0
10
100
1000
COLLECTOR SATURATION VOLTAGE V8 COLLECTOR CURRENT

1.0
BASE SATURATION VOLTAGE V8 COLLECTOR CURRENT ':
':
Ie "10 18
i5
I!i
0.8
~ 0.8 f--~--I-~.-+jJ#~-'4-----J
0.6
TA -100 e Tl! !1 e II,

o
r
i=
1III N
!
'5 i
>
=
~ G.6~~-+--=-+-::"'--+----1
-.-- }
~
0.1
I
i ~ f\ TA i5~C-
rv I. II
100
~ 0.4
f----+---- .. -.~.
0.1 f------+----+----+------J
o
0.1 1.0
" 'I'
O~_-J
___
__
~-L
____
10
1000
0.1
1.0
10
100
1000
MAXIMUM POWER DISSIPATION V8 AMBIENT TEMPERATURE

800 700
MAXIMUM POWER DISSIPATION V8 CASE TEMPERATURE

1.4
1
f--+-+---t-.........iI--+--+-+---1
1.2
1.0
0.8
1'" 1\ "Y0-18
T0-92
0.6
~ "- I\.
I
1
0.4
~ ~
100 125
0.2
00
25
50
75
1'\1 1\
150
Tc CASE TEMPERATURE "'C
'"
175
4-62
'"
200

BASE TO EMITTER 'ON' VOLTAGE va AMBIENT TEMPERATURE
1.0
r----r-,--~-r----r-,--~---,
BASE TO EMITTER 'ON' VOLTAGE va COLLECTOR CURRENT
---veE -1.0 V
~ ~ C.b c
--v:IOV Cl
g
;\
~ ~
!
0.8
!
~
0.7
O.b
g 0.21-__+ ___1-_'+-+__-1
~
-z(
20 4(' 60 80 100 120
0.5
-4
0.1
1.0
10
10C
1000
TA AMBIENT TEMPERATURE - 'C
~ B 101--+-_--_~--___~~-_+
~ 5.0 f----+-----~--7I""--------l -~---t=_---:
8
u
~
-..-t-..
0.5 b-L.~+-----_r_-_--+-_-,-_------+
~_--r,--+--
~ 1. 0 f---t-o>.4'---+----i--_-
0.1 '--_ _~__+-........I_~_ _ _~........I 20 jO 40 50 60 70 80 90 "100

TA AMBIENT TEMPERATURE 'C
5,O/---""'-..--+--
10
0.5
-----~--,
.. - . - .. -~--
n 1 L.._ _ _ _ _ _ _ _ _ _ _ _--.J
f),1 If,
ifl
sr
Ie - COLLECTOR CURRENT rnA
4-63

1.0 1---1r---+r-+-+i-\!-J>.----7'HH-A 3.0 I--I--;-+H--\I--lt--t---I-AII-A
1.0 f--+r--t--\-Hr=F.::~Y1f---4
O.II--t+t-t\----\ 0.31--Hl-M 0.1 L-_.......J_L-~L...l_L-_L...l---..l 3050 101) 0.1 O.lO.II.O 3.01.0 10

Ie . COLLECTOR CURRENT MA
4-64
FAIRCHILD

DC PULSE CURRENT GAIN vs COLLECTOR CURRENT
, 0
~
" ffi
3.0
g o7
c
~
1.0
~ 0.3 z
~
't
0.01 0.1 1.0
IO
100
.. ......
BASE TO EMITTER 'ON' VOLTAGE vs COLLECTOR CURRENT
BASE TO EMITTER 'ON' VOLTAGE vs AMBIENT TEMPERATURE
g ~
~
~
0.8
f----t----+---r---c;o;.L-.I
~>~
;
0.75
0.65
.:..== Ve~ 10 -+---+-.+--f-.-j ~.:::.::.:.J .

V
.......... Ve".lOV
0.6
f---+C"'J*
0.4 f---+----,~-+----r-------1
ili
~
o
~, <
055~"" ~~~:~..'.I.e:;omA
. . . ~<.
0.45
~.
--~~
$
0.01
J 0.1 1.0
10 100
R~.:;:.~ ~ t .
~'..:::I
--+--f--+-_.-
Ie 'IIO'A
0.35 L...-L_..L_L...--'-_..L.......JL...-L--l -40 -20 20 40 60 80 100 120

TA - AMBIENT TEMPERATURE C
Te
CASE TEMPERATURE C
4-65

COLLECTOR SATURATION VOLTAGE vs COLLECTOR CURRENT CAPACITANCE vs REVERSE BIAS VOLTAGE
~
~
0.3
e
u
D.?
0.1 0.1
~
0.01
r--------cr------t---
100
0.10L...1-----~----.-L---\O
REVERSE BIAS VOLTAGE \t

lar-~-~-r-~-'--r--'-!-
"2
VCB 1'3 VC80 5.0
~
u
~._.
'I
I ~u~
1.0
1.0
I-----l-+-t------;,-+-+--+----j 1----+-+-+--+-+-----,,1"'--+-----1 1-----l-+--+-7"f'-----+---I----+-----1

--t--
---~~--+--.-
_+-..
I
i
I
-.--t---- ---+--- t---. ---
1%
I
0.\
r+ --r---t--+I
yV"l1
a.1
v VI
--t---: +ii+Ie - COLLECTOR CURRENT mA
0.1 L---'_--"--_L.----L_--'-_I-----l._ 20 30 40 5C 60 70 gO 90 100

TA AMBIENT TEMPERATURE C
lOOk
I---r'-=,
I
ar:::
10k
I.Ok
Ie . COLLECTOR CURRENT
rnA
4-66

NOISE FIGURE va FREQUENCY
6.0
4.0
~--\...lt+---+-'----1f----+-+-r-;"';"'--+-.........-:"-+--':"';+-l-l--I
f FREQUENCY Hz
WIDE BAND NOISE FIGURE va SOURCE RESISTANCE

B.O ,--------r----r-_r-r-r-,---,
VCE - -5.0V BANDWIDTH' 15.7 kHz

-100
,--,--,-rr--r--r-n-r----,----r---,-,,--,
;!
; 4.0
ill
~
0z
1.0 I--r----~'<-_+---r-+----j
-0.1 L.LJ.J>l_~....L..J::!.t....'"""'~...J..ll---,J 0.1 10 1110

AS' SOURCE RESISTANCE!!
EQUIVALENT INPUT NOISE VOLTAGE AND NOISE CURRENT va COLLECTOR CURRENT

10 0.1 VCE - -5.0 V 5.0 0.05
I!
,. z
u
~
~
'" ~
II!
1.0
0.01 0.01
>
!3
Ijj
~
:;:
a;
0.5
c
S
> 5
iOOHz
0.1 0.1101
~ 5
8
Iw
1.0 kHz
0.1 0.1101 0.01 01
L!
1.0
0.001~
4-67
FAIRCHILD
Ie . COllECTOR CURRENT
mA

~
>
=:
z
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U
u
I
~ 610-2
75C
TC - 25C
~'0-3
!:} 26 60 76 100 126 160
TC - CASE TEMPERATURE - C
1.l Ul0-3
-0.6 -0.4
-0.2
V
-0.2
0.4
VBe - BASEEMITTER VOLTAGE
4-81
FAIRCHILD

0 .
DC CURRENT GAIN
260
VW~",V
---._TC = 150"C
Z 200
I-
~
Z
~~
~w
0:
f-JJU
TC'" 15QOC
0.4
~ 150 t-,
f-""
"
ClOD
CJ CJ
~
I-
.
w
60
Io
0.001
0.01
Ie
TC
25 0 C V
.....TC
" \ ......
55 Q C
~~ O.,J
E~
g~
0.3
I
TC '" 25C
~: 0.2
I--"
f-"""
0.1
I I I I
~
5.0
!i fi
;"
TC =
o1
-~.tb or{ ~~
"
Iaf
I
0.001 0.01
0.1,
o
1.0
1.0
5.0
COLLECTOR CURRENT - A

1.6
1.6
~ ~ \J
> ,
0:> 1.2
w' I:w _co
"
Tc;: 55C TC
V~EI Jko l
~
TC"" -56C
~ 1.2
g
o
z
0:
0.9
.. >
~~ wo
0.9
~~
i~
is H-Hr
TC - 160::;""
0.8
I II
26:;' _
-0.1
/'
,/
./
~ !
.. -rTT ;i!
0.6
TTl
TC
~;:;.s;s
~
,/
./
> .. 0.3
l II o I II 0.001 0.01
f3 'ill 'T 11
,
1.0 5.0
TC == 150C
0.001
0.01
0,1
1.0
5.0
TURN OFF TIME

10
6,0 ~
181 = 182
TURN ON TIME
10
"
leila _. 10
1=
~
6,0 2,0
~
I I I 'C/'.
~
tr@VCC=BOV
10
2.0 1,0
I
"
~
'f@VCC=BOV
1,0
0.6
0.5 0.2
0, 1 0,06
ij:
-r'f@Vee==20V
'iJ i'- .......

r-...
ij:
~
"
tr@Vee: 2OV
td @ VSEloff)- 6.0 V
0.2
0, 1
t--,[f
" ..... t-1'.
6.0 10
0.05 0.02 ~
III
0,0 2
0,0 1 0.010.02 0.05 0.1 0.2
I I
I
0.6 1.0 2.0 6.0 10
0,0 1 0.010.02 0.06 0.1 0.2
~d ~ VEB'Off\ "~,V
0.5 1.0 2.0
Ie .. COLLECTOR CURRENT .. A
4-82
FAIRCHILO
T333 Curve Set

0.5
Vce=10V
DC CURRENT GAIN
100 90 80
Z
I I I I
TC = 150C"
;;
'" ...
a:
70
V
,/
~~ :liw
a:
p = 10
0.'
Te == 15Q o C
is a:
so
50 0 30 20 10 1.0
" " 0 "
VTc =2' C---., V

o
IY MI
~~
a~
\
I
"'0
0.3
-I)
irl>
, w
.c
V
V
<5.0
\~
" ...
>
300
g~
Te == -55C
,\\ "\i
~~ = ...
0.2
TC - -.5C
'-...,V
1/1 'I
TC
25 0 C
0.1
l-
I-10
..... ~
100 300
10
50
100
1.0
Ie - COllECTOR CURRENT - rnA
Ie - COLLECTOR CURREN'r - rnA

1.0
.lJ
II:
10
I
Te = -55C
:Ii..: ":'~ 0.6
!:~
w'
> 0.8
I-
Te == 25 0 C
V
/'
,/'
> ,
1.0
veE == lOV
./'
:lz
~~
en>
wa
I-
--r
";V
'~"
z
0
TC == -55 o C
0.8
../
a >
a: O.S
II
Te == 25C_
,51 i:
TC- 15O
0.4
~
w
I
-lI-"
Il-
r--
--.,/
./'
/'
-I-
>t,I)
0.2
~ '", :l
TC'" 150 0 C
.-
0.'
>
1.0 10 100 200
..
g 0.2
o1.0
5.0 10 50 100 200
GAIN BANDWIOTH PRODUCT

50
VeE == lOV
:Ii
...
a
a:
'"
10MHz
.
l: ... a
" 0 "
'0
/r
30
/
L
a z ..: z ;;
20
10
\ \
100
rnA
'c ",
1.0
5.0
10
50
200
4-83
I=AIRCHILO
DC CURRENT GAIN
20 0
V E 4.0V
>
14 veE
=
4.0 V
180
Z
g
~
1.
I
T
- 11S0C
14 0
~ 12 01~
0
-~-
~ 10 0
U
:'-f--
/j
80
I
60 40
20
II
TCui!
Ie
~2S0C
,\
1\
5.0
I-'
.001
..J ,C'I~ T.0C V
6 .....
001
Yllt;C
01 0.1 '.0 COLLECTOR CURRENT A
.01 0.1 1,0 Ie - COLLECTOR CURRENT - A
r" fat Hr Y II
!
",,,0
(,1
50
COLLECTOR-SATURATION VOLTAGE
o. 7
1.4
Ie/Is = 10
BASE SATURATION VOLTAGE
IC)I~ ~"0
V
~rc-"~
",,\fJ
rl
Te = +150 o C
2
0
~oC ~
I
8
3
2
tc I
+25C /
r6r4
1--,
V-
~o(, -.p: "\c'"
o. 1
,
~~
001
I TC-'--55C
I'
"I
i-o. 2
5.0
01
0.1
II
1.0
A
0
.001
.01 0.1 1.0 VSE(sat) - BASE-EM lITER SATURATION VOLTAGE - V
5.0
SWITCHING CHARACTERISTICS
5.0
Ie -. 10 IB1 .- 10 182
~ 1.0
;:
::;
w '"
"'- i,
-t-
"'
~
0 1
i:'
..
"
~~
rtd t,
1 0.2 0.4 0,6 0.8 1.0 Ie - COLLECTOR CURRENT - A 1.2
4-84
FAIRCHILD
DC CURRENT GAIN
200
BASE SATURATION VOLTAGE

_1.2
~" 10
'ie -',.Job
VeE == -4.0 V
il
"
>0: 0:
Z 160
_1.0"
1\
0:>
~ 120
\
I-
~~
~~-O.8 I-
::>
80
I40
m
0.01
_ zfJoC
......
~.
"'0 In>
~~
1~
1C-
__ sso~
"
"
~-O.6
Uoc
1\\
I\l
0.1 1.0 5.0
~ >CI)-O.4
..
UP
i:
o
0.001
I II
H-- I
0.01
I " I.,~
-0.2 0.001
II I II
0.1 1.0 5.0
COLLECTOR SATURATION VOLTAGE

-1,0
~"
-1.2
10
g~
:Ii ...
a:
-0.8
...
z
> ,
VeE "'-4.0 V
!:;
-1.0
... c(-O.6
1;l>
>-0
~z
o!:;
ct:
"
g
o
0:
II I II I
-
-0.8
T~ ~ ~.oc
5 Q-O.4
u>-
~
~
-0.6
"IT I
~CI)
!!i-Do2
o
~~
I-
f---t
~ Te "" 150C I I II
TC = 25C
~Cl~ ......
/,
/,
TI
I II
0.01 0.1
~-O.4
TC
1.0
5~Of,
5.0
ill
0.001
> -0.2
0.001
J" I. ,~oo " ~I

C ......
I I I
0.01
0.1
1.0
5.0
SWITCHING TIMES
10 Vee == -30 V leIla'" 10 IS1 =IS2 VBE(offl,= -2.0
en 1,0
;:
I'-r-.,
I,
z " i
~
~
0.1
If
.""
t,
I"" J"..
r-- K
'~
1.0
"
10
-......;;::
0.0 1 0.1
4-85
FAIRCHIL.D

-1.0 -0.9 Te'
-0.8
i~
~
. , ~~
c>
-~5"C
I--'"
/
Ig
>c en
i~
":'!:; -0.8
,0
i~ -0.4
Te"Jo.:;~ z -0.' ,-0.3

-0.2 -0.1
-07
--
.
>
-1.0
~
~
-0. TC."jIOC TC'" 210C
~ -0.
0 IE
-0.7
10
./
./
I--
-0.' -0. Te -0.4 -0.3
~ !
i,
..
....---
-1~0"C
Pi 'i
20 &0 100 200
1-0 .2 ii -0.1 >
VeE
20
-5'jV .00
10
500
10
100
200
SMALL SIGNAL CURRENT GAIN

100
SWITCHING TIMES
5.0
2.0
.. G i i ..,
Ii
IE IE
z ~ eo
20
veE --10 V
f=1 MHz
,/
!
~
!. ,
1.0
0.1
.....
-r-~
10
in
5.0
I
2.0
1.0 10 20 10 100
Ie - COLLECTOR CURRENT W- mA
0.2 0.1
...
2.0
1.0 1.0
~ 0.01 Vee - -100 V""' leila::: 10 181 =182 0.02 V.,EI"'!' = ,-4 ~ 0.01 0 20 40
""
10 80
" ,,--
..
100
120
120
.,
,
100
INPUT CAPACITANCE'
OUTPUT CAPACITANCE
10
.......
VEe = -&.0 V _
.........
f--\
1=1.0MH. 41
40
&
80
~ ~
~
"- .......
rlu~
eo
40
'"
-0.2 -0.& -1.0 -2.0 -&.0 -10
VEa - REVERSE 81AS VOLTAGE - v
30 26
~ ,
20 1 1
10 &.0
20
'"
r........
-1.0
i"""'--.
-20 -10 -100
-0.'
-1.0 -2.0
-10
Vea - COWCTOR TO IA8E VOLTAQE - V
4-86
Product Family Curves Test Circuits ring Information and Outlines High Reliability Information Dice and Wafer Information Field Sales Offices
FAIRCHILD
Test Circuits
210
ton - toff SWITCHING

V ,N
__1+~t----------------10%
3.3 k!l
90%
~--1~---1 0.005"F
Vaa "" -3.0 V
V 1N =+15V
0.1 JJ.F
0.1 jJ.F
PULSE GENERATOR VIN tr
< 1.0 ns
SOURCE IMPEDANCE = 5051 PW ;;;. 300 ns DC
< 2%
toff
VBB=+12V VIN = -15 V TO OSCI LLOSCOPE INPUT IMPEDANCE = 5051
Your
;-r
...--toff--
____~t____~____~.-4_____ 9~
t r E;;1.0ns
219

Vas'" -6.0 V
224
td - tr SWITCHING
VCC"-30V
5k
130 !l
200n
5k
-,:u
PW = 100 ns ZIN = 50 51
t r , tf
'.0 k
50 !l
1-1200n,
TO OSCILLOSCOPE
tr';; 5.0 ns
TO OSCI LLOSCOPE ZIN;;;' 100 k51

tr
<
1.0 ns
<
1.0 ns
Zo
= 50 51
PRF=150PPS
tr .;; 2.0 ns
ZIN=10M51
IC '" 10 mA, IB1 '" 0.5 mA, IB2 '" -0.5 mA
5-3
Test Circuits
225
ts - tf SWITCHING
Zo = 50 n. PRF=150PPS
tr <;;; 2.0 ns
TO OSCI LLOSCOPE tr <;;; 5.0 ns ZIN = 10 Mn.
231 ton SWITCHING

V BS "'-O.5V VCC"+30V
PW <;;; 200 ns tr <;;; 2.0 ns ZIN=50n.
.'04TL
o
V'N
0.47"'
~ 1-'6V1V9
VOUT
50111
"11---1...
-=
TO OSCILLOSCOPE ZIN
< 100 kn.
CIN<;;;12pF tr <;;; 5.0 ns
232toff SWITCHING
Vaa
=
-23.8 V
VCC=+30V
20011
VOUT
20 kll
5011
PW"" 10 p.s ZIN = 50 n. TC<;;;5.0ns
TO OSCILLOSCOPE ZIN> 100 kn. CIN<;;;12pF tr
< 5.0 ns
The 20 kn. and 50 n. resistors on the output of the test circuit are normally omitted, due .to the excessive attenuation of the collector waveform. The collector voltage is monitored directly with a high impedance oscilloscope probe.
5-4
Test Circuits
233 ton - toff SWITCHING
PW;;' 240 ns
t r , tf
< 1.0 ns
ZIN=50!1
TO OSCI LLOSCOFE tr
< 1.0 ns
ZIN '" 100 k!1
234 CHARGE STORAGE TIME

V BB = -10V
Vee
"3.0 V
PW
= 240 ns
ZIN = 50!1
t r "'1.0ns
+9.OJLV
o
0.1 "F
TO OSCILLOSCOPE ZIN ;;. 100 k!1

t r <1.0ns
V1Nc:r--r
1
235 SWITCHING TIME
Vaa
= +-l.9V
51n
IC'" 10 mA, IB1 '" 10 mA, IB2 '" 10 mA
PULSE SOURCE
tr~1.0ns
Vee
-6.0 V
PW;;' 100 ns ZIN=50!1

.t r .. 1.0 ns
1.0k!2
IO. 1 J,1F
110n
0.1 pF
G80l!
TO OSCI L.LOSCOPE ZIN ;;. 100 k!1

t r "1.0ns
COLLECTOR CURRENT = 50 mA, ton AND toft BASE CURRENTS = 5.0 mA
5-5
Test Circuits
238
30 MHz AMPLI FI ER
110- 580 pF
50 n GENERATOR PIN 40 mW
(O+--.....-"""*F---,
55 - 300 pF
POUT 400 mW (MINI

AT'I1;;;'SO%
.01
220n
Vee 15V
Tl - 4 TURNS NO. 20 WIRE, 3/4" DIA. X %" LONG, MIDTAPPED. Ll AND L2 - 4 TURNS NO. 20 WIRE,)I," DIA. X %" LONG. VARIABLE CAPACITORS ARE COMPRESSION MICA.
239
tott SWITCHING
VBB ~ -11 V
Vee
-3.0 V
275
PW '" 300 ns t r <;; 1.0 ns

z1N~50n
'N1
0.1
loon
241 ton SWITCHING
Vee 25 V
TO OSCI LLOSCOPE tr <;; 1.0 ns ZIN ~ 100 kn
8051
PULSE SOURCE
t r <;;1.0ns
50051
ZIN = 50n
50 !l
TO OSCILLOSCOPE tr <;; 1.0ns ZIN '" 100 kn
5-6
Test Circuits
242 toff SWITCHING

VCC~+25V
80 II
+31JL
1-~10 ~5
VIN
l '~F
0.47
PULSE SOURCE
tr "' 20 ns
ZIN ~ 50 n
500 II
50 II
TO OSCILLOSCOPE
tr",'Ons
ZIN ,., 100 kn
245

VBB
=
+3.1 V
PULSE
G EN ERATO R
Ug.OV
V I N Q - - -....---i 1---.4_'VI.t'v-
r tf "' 15ns
~
PW
0.51-1s
75U
ZIN
= 50n
ns
TO OSCILLOSCOPE
t r ", 1.0
ZIN;;;' 0.1 mn
246
ton - toff
Vee'" +3.1 V
lk!2
PULSE
;NERAT
L..J-9.0V
VIN
1.0"F
t r tf "'
170
6ns
PW
= 0.51-1s
ZIN = 50n
son
500'pF
TO OSCI LLOSCOPE
tr
< 1.0 ns
ZIN;;;' 0.1 Mn
5-7
Test Circuits
254 GAIN AMPLIFIER
INPUT IMPEDANCE
'" 50U
HXHl *,O.01;lF
1000 n ~ 0.05 "F

-VEE
L1 - 3.5 TURNS #16 WI RE; 5/16" DIA.; 7/16" LONG. TURNS RATIO 4 TO 2 L2 - 8 TURNS #16 WIRE; 1/8" DIA.; 7/8" LONG. TURNS RATIO 8 TO 1 L3 - 0.4-0.65 /-IH, ADJUSTABLE CORE
264
500 MHz OSCILLATOR
75 pF
OUTPUT
(NOTE 1)
NOTES: (1) COAX PLUMBING CONSISTS OF THE FOLLOWING GR AIR LINES: 2 TYPE 874 TEE 1 TYPE 874 - 020 ADJUSTABLE STUB 1 TYPE 874 - LA ADJUSTABLE LINE 1 TYPE 874 - WN3 SHORT - CIRCUIT TERMINATION (2) 2 TURNS #16 AWG WIRE, 3/8 INCH 00,1-1/4 INCH LONG (3) 9 TURNS #22 AWG WIRE, 3/16 INCH 00,1/2 INCH LONG
265 SWITCHING "tIME

Vss'" -3.8 V
VCC=+30V
tr AND tf';;; 1.0 ns
PW"" 1.0 /-Is

1.0kn
15n
1.0p.F
ZIN = 50 0VOUT
1--0
DC
< 2%
1.0 ns
+9.7TI
43n
TO OSCI LLOSCOPE
tr
loon
<
ZIN;;' 100 kO-
IC "" 500 mA, IB1 "" 50 mA, IB2 ""50 mA
5-8
Test Circuits
286

V BS
V cC =+2.0V
d2fl
loon
0.1
PULSE SOURCE
toff:
VCC~2.0V
tr
VBB=7.0V
VIN~-13V
PW
< 1.0 ns > 200 ns
ZIN=50f! TO OSCILLOSCOPE
t r <1.0ns
ton: VCC = 2.0 V

VBB GROUNDED VIN=7.0V
ZIN '" 100 k.f!
287 ton - toff SWITCHING

THIS WAVE FORM ASCERTAINED HERE
I
1047 pF
V'N
40 Po
~---oVOUT
PW
15 ns
tf .;; 1.0 ns
ZIN = 50.f!
Ol
1.0 5~ 5.0 W 50 V
lOon
10051
FD100
TO OSCILLOSCOPE
tr
=<
1.0 ns
ZIN = 10 Mf!
288A
VCC~+20V
130 !l
tr OF INPUT PULSE
tf OF INPUT PULSE
TO OSCI LLOSCOPE
tr
< <
15 ns 15 ns
>
15 ns
ZIN '" 100 kf!
5-9
Test Circuits
341
ton - toft SWITCHING

V BB
= +3.8 V
Vee = -30 V
60 n
PULSE SOURCE t r , tf
-9.7U
342
V IN
< 20 ns
1OI'F
JIN = 50 n PW = 10J.Ls
DC
< 2%
kn
62H
TO OSCILLOSCOPE ZIN> 100 tr '" 1 0 ns
SWITCHING TIME
V BB
= +3.0V
1.0 k!l
.....---InV OUT
-8.3li ""o---f'"
PW = 500 ns tr AND tf = 1.0 ns ZIN = 50
TO OSCI LLOSCOPE
50n
t r <1.0ns
ZIN'" 100
kn
348
2.2 k
5k
VBB = GROUND VIN = -5.B V
VIN PW = 240 ns ZIN = 50 n t r <:;1.0ns TO OSCI LLOSCOPE ZIN ;;. 100

t r <1.0ns
toff VBB = -S.OV VIN IC '" 10 rnA, IB1 "" 1.0 rnA, IB2 '" 1.0 rnA
kn
= +9.S
5-10
Test Circuits
381
!
33 k
~r-'0%
Vi"
I~~_______
50 !'
_toff _ _
TO ascI LLOSCOPE
toft:
0.1 iJ.F
0.1 !.JF
VSS=+12V VIN = -20.9V
ZIN=50D
tr~1.0ns
PULSE GENERATOR
Vcc eo3 .OV
V IN
=
= tr <
1.0 ns
SOURCE IMPEDANCE
! -i;;::::;::::
V OUT V SB =-3V
50 D
PW;;' 300 ns
90 "
DC
< 2%
VIN=~1525V
407
SWITCHING TIME
Vss
=
+3.0 V
1.0 k!!
PW = 500 ns
0.1
~F
tr AND tf
1.0 ns
V1N~
ZIN=50D
TO ascI LLOSCOPE
I
526
50
tr
!!
<
1.0 ns
ZIN
100 kD
-=
ton SWITCHING
Vss
~
-0.5 V
Vcc = +3.0 V
275
~!
VOUT
Cs < 4.0 pF
tr =
DC
<
1.0 ns
PW;;' 300 ns
= 2%
5-11
Test Circuits
527
toff SWITCHING
VSS=+l1V Vcc" +3.0 V
275
DUT CS <4.0pF
tr
= < 9.0 ns
~
PW DC
300 ns
= 2%
531 ton - toft SWITCHING

CONDITION "A"
CONDITION "8"
Vee
+3_0 v
J
n CON DITION "A" = td. t r ton TO OSCI L LOSCOPE Vaa = -1.5 V Vaa = -4.15 V Vaa = -9.1 V VIN = +12.05 V 10/3/1.5 mA 10/3/3 mA VIN = +14.85 V VIN = +19.8 V CONDITION "a" = ts. tf. toff CONDITION "C" = ts. tf. toff 10/3 mA
50
270
DUT
INPUT PULSE
tr
= tf .;;
~
2.0 ns
PW
300 ns
tr';; 0.4 ns
RIN ~ 100 kS1 CIN .;; 4.0 pF
ZIN=50S1 DC'" 2%
532
CONDITION "A"
CONDITION "B"
50n
270n
J
CONDITION "A" = td. t r ton Vaa=+1.5V VIN=-12.05V
0.47 pF
3.3 kn
INPUT PULSE
V IN
o----jl-.......JV\J'v.-r
DUT
TO OSCI LLOSCOPE
tr
= tf .;;
tr .;; 0.4 ns
RIN ~ 100 kS1 CIN .;; 4.0 pF
2.0 ns
PW '" 300 ns ZIN=50S1 DC "'2%
CONDITION "a" = ts. tf. toff Vaa=+9.1 V VIN=-19.8V
5-12
Test Circuits
536 ton - toft SWITCHING

V aB
=
"4.85 V
Vee
-10 v
300/30/30 mA
INPUT PULSE
Your
30 D
-1095V
. , rV1NiL-J
, ,F
170
t r . tf
PW
=
<
6.0 ns
z1N=50n 0.5 /.ls TO OSCI LLOSCOPE

tr
50 i!
<
1.0 ns
ZIN;;' 100 kn BASE CURRENTS WILL BE EXACT WHEN THE ABOVE VOLTAGES ARE USED. THESE VOLTAGES TAKE THE TERMINATING RESISTOR AND GENERATOR IMPEDANCE INTO ACCOUNT WHEN THE CURRENTS ARE CALCULATED. VBE (sat) IS A NOMINAL 1.0 V.
559 ton SWITCHING

ADJUST V BB FOR -{).2 V OFFSET AT POINT "A"
VCC=+30V
200 D.
047
~F
INL POINT "A"
1""
560 toff SWITCHING
V BB
=
tr
<
2.0 ns
PW = 1.0 /.ls DC
= 2%
-23.3 V
VCC=+30V
1.0 D.
200 D.
0471lF
V INL
151
tr .;;
2.0 ns
D.
PW
= 1.0 /.lS
DC = 2%
-4.0 V
5-13
Test Circuits
588 TS SWITCHING
Vee = lOV ADJUST FOR 10 mA
20 I!
980.S!
PULSE VOLTS INTERNAL RESISTANCE +---oVOUT
-4.0V
o V ::.:::t- -
+5.0 V r i
-1::.= vINo---..A,,/Vv--'Vvl\r---(
50 I!
350
OUT
TYPE R SAMPLING RESISTOR Ie = 10 mA, 181 = 182 = 1'0 mA
589

Vee = 3.0V
ADJUST FOR 10 mA
20 P.
270n PULSE VOL TS

+ 7.0 V
r-1 50 n 2.0kn oV d - t.:; V IN o---W'lr-"'V'V'r----l" -2.0V
INTERNAL RESISTOR
DUT
TYPE R SAMPLING RESISTOR Ie = 10 mA, 181 = 3.0 mA, 182 = 1.5 mA
5-14
Test Circuits
1132A
SWITCHING CIRCUIT AND SWITCHING TIMES

120~F
ATTENUATOR SKL MODEL 503 Vp

Zo~170!!
"l..I
150n
son
1kn
TEKTRONIX 517-A
170n
Vaa
-=-
TERMINATION
-=-
-=CONDITIONS: Vee DETERMINATION OF SWITCHING TIMES FROM SCOPE DISPLAY

~
-15 Volts, Va
~
1.5 Volts,
Vp ~-7.5 Volts, Pulse Length
150 nSec
3111
CHARGE STORAGE TIME
890
'A'
0.1 j.lF
V OUT
0.1/-1 F
500n
VIN
-10V---56n
500
ll
91n
0.0023 "F
0.0023/.1F
+6.0 V
10% PULSE WAVEFORM - - - - 4 \ AT POINT "A"
-4.0 V
10 /.IF
----+''--------
't-=11V
10 j.lF
10 V
TO OSCI L LOSCOPE ZIN
= 50 n
tr~1.0ns
PULSE GENERATOR VINt r <1.0 n s SOURCE IMPEDANCE

PW;;' 300 ns
= 50 n
DC
< 2.0%
5-15
Test Circuits
3163
at TEST CIRCUIT
Vee = 30V 59!! 180n VOUT
VALUES REFER TO le=500mA TEST POINT
10VT=zrb
:;'V
VIN
0-1
10"sec DUTY CYCLE = 2%
3164 td AND t, SWITCHING CIRCUIT

+30V P.W. 2200 nsec RISE TIME ::02 nsec DUTY CYCLE = 2% +10. 7V
VIN __
n
--
590 OSCILLOSCOPE
-0
-2V
3165
ts AND tf SWITCHING CIRCUIT
10<11 <500 "sec 12 <5 nsec 13>1"sec DUTY CYCLE = 2%
+30V 590
----j 11
+11.3V-K
i
I
VIN = - - - U - 0
VIN-..JVI./'v---.~-[
lN916
2000
8.7V-1
~13J--
~-3V
5-16
Index and Device Crossreference Device Selection Guides Product Information Product Family Curves Test Circuits Ordering Information and Package Outlines High Reliability Information Dice and Wafer Information Field Sales Offices
FAIRCHILD
Packaging And Ordering Information
Case Outlines A. Diode Physical Dimensions (00-7, 00-35, 00-41) B. Transistor Physical Dimensions (TO-39, TO-18, TO-92) C. Surface mount 1. Leadless diode (LL-34) 2. SOT 23 (TO-236 AA & AB) 3. SOIC 8, 14, 16 lead package o. Diode and Transistor Arrays (4L, TO-85, TO-86, TO-96, TO-116,"TO-116-2, TO-33) E. Photo Transistors (OPTO-26, OPTO-28) II Packaging Options
A.
Diode 1. Bulk 2. Tape and reel a. axial (fig. 1) b. radial (fig. 2) B. Transistor 1. Bulk 2. Tape and reel (fig. 3) C. Surface Mount 1. Bulk 2. Tape and reel (fig. 4) O. Monolithic arrays 1. Tubes
III Ordering Information A. Axial Lead Diodes No suffix indicates bulk packaging package quantity = 4,000 TR suffix indicates axial tape and reel (50 mm tape spacing) package PS suffix indicates axial tape and reel (26 mm tape spacing) quantity signal diodes 00-35 = 10,000 00-41 = 7,000 package quantity zener diodes 00-35 = 5,000 00-41 = 3,000 RT suffix indicates radial tape and reel package quantity 00-7 = 2,000 00-35 = 2,500 00-41 = 2,000
B. Transistors No suffix indicates bulk packaging package quantity TO-5 = 400 TO-18 = 500 TO-92 = 1,000 RT suffix indicates radial tape and reel style A styles B, C, or 0 must be special ordered package quantity = 2,000 05 suffix indicates TO-5 lead form 18 suffix indicates TO-18 lead form C. Surface Mount Diodes and Transistors (SOT-23) 1st suffix letter indicates lead form profile S = standard profile (TO-236/AA) L = low profile (TO-236/AB) 2nd suffix letter indicates packaging style 0= bulk A = tape and reel style A B = tape and reel style B package quantity bulk = 1,000 tape and reel = 3,000 O. Leadless Diodes o is the first suffix letter for all lead less diodes 2nd suffix letter indicates packaging style 0= bulk A = tape and reel style A B = tape and reel style B package quantity bulk = 3,000 tape and reel = 3,000 E. Examples PN2222A, radial T&R style A order as: PN2222A.RT PN2222A with TO-5 lead form order as: PN2222A.05 1N4148 tape & reel order as: 1N4148.TR FTS02222A, low profile, T&R style A order as: FTS02222A.LA FOLL4148 T&R style B order as: FOLL4148.0B
6-3
Packaging And Order Information
Figure 1
METAL OR CHIPBOARD
/:.=::::-::::-...
. f
I
RETAIN WITH ONE 89.0'6.4(3.5'2.5) RUBBER BAND WHITE CORRUGATED OUTER LINER (2 TURNS) 0.76(03) MAX.
1.19(.047) RADIUS MAX. WHITE (ANODE)

'_-1 '
1
j- .5.46(.215)
4.70(.185)
'-r-.
"
, , : 1\
CENTER LINE
0.~~03)-!
RED (CATHODE)
~-.r--
;Ii
~I
11
"
WHITE (ANODE) RED (CATHODE)
"
b"
1+1'---101.6(4.0) 21 DIODES
,,,",,I", " " , ,=:}---I ------I

7.87'(.310) 4.83(.190)
I~
t~;
~:M~:::h) ::~::::i:'
T-i
I
50 OR 60 POUND KRAFT .PAPER TO BE WOUND BETWEEN LAYERS OF DIODES 63.5(2.5) WIDE MINIMUM 1/2 TURNS EXCESS
* OPTIONAL
Note: All dimensions in millimeters (bold) and inches (parenthesis)
Figure 2
6-4
Figure 2 continued
02 3.92(.154) 3.78 (148)

(0:t.08)
r-+; i I!
I I
3.0:t3.0 (.12:':12)
SEATING PLANE CUTOFF

16.5(.65) 15.5(.61)
.....---+-11.0 MAX. (.43)
34.0 MAX .
(1.34)
- - ' - r r - - - L - - L . . . 19.0(.75)
17.5(.69)
1
1---+1-_-+- 5 .8 (.23)
13.0(.51 ) 12.4(.49) 4.2(.17)
~=+
0.9(.04) 0.5(.02)
Figure 3
Style A Style B (Preferred)
Style C
Style D
Style A: FSC STD (Preferred) Transistor lIat side down, carrier tapes to the lefl. Emiller leads when unreeling. Style B: Transistor lIat side up, carrier tapes to the lell. 'Collector leads when unreeling. Style C: Transistor lIat side down, carrier tapes to the right. Collector leads when unreeling. Style 0: Transistor lIat side up, carrier tapes to the right. Emiller leads when unreeling.
6-5
Figure 3 continued
011.27 13.21 (.52) '12.19(.48)(Oi .05)
1.02 MAX. (04)
SEATING PLANE
T~
0.51 MAX. (.020)
19.0(.748)
18.0(.70~1)
CUT OFF
16.51(650)
15.49(.610)
:: :: ::
9.30(.366) 8.69(.342) L-------,t'T\=--+--=::----~:::::::-++-p.o;::=::~...I--1------t=_____.t 18.39(.724) -L-_-'-_--+ --17.48(.688)
U l: U
::
UUU
I: ::
~~
W
I
1
2.84(.112) 2.84(.112) 2.24 (.088) -j...j....f-- 2.24 (.088) 1.45 MAX.
6.76(.266) 5.94(.234) 12.90(.508) -12.50(.492)
'T
SOT -23
Style A
TAPE FEED
~~~~~~
000 0 0
000
Style B
gg~~
EIA Std RS481
LL-34
Style A
TAPE FEED
[c]LCJLCJ[CJ~
Style B
[C][C][C][C][CJ
NOTE: Polarity band Indicates cathode
Note: All dimensions In millimeters (bold) and inches (parenthesis)
6-6
Figure 4
1.51 (.063) 1.50 (.059)
4.10(.161) 3.90(.153)
10 PITCHES CUMULATIVE TOLERANCE ON TAPE 0.2(.008) 1.95(.077) 1.85(.073) 1.65(.065)
f----+-- 2.05(.081)
_ j:
TOP TAPE 4.20 MAX. (.165) _
1'r---4-----\--~ - - - . ~==~~~--1.0 MIN.
3.45(.136) 3.55(.140)
8.30(.327) 7.70(.303)
3.!joMAX. (.150)
__~____~~-r________+-______~-+__J_~(.0=3~g)~_
For machine reference only
including draft and radii
EMBOSSMENT
USER DIRECTION OF FEED
TOP TAPE THICKNESS 0.10(.004) MAX.
~
EMBOSSMENT
6-7
00-7
00-35
00-41
o----:r
(25.4O)IIIN
i
0.021 (0.533) DIA 0.011 (0.0483)
1.20 1 305 1
IToi2f91
.100 2.541
1
------j
.090=
0.110 (4.57)
0.140(3.")
r-
I.
I
II
-J
.175 '4 45 1 .16514 191
.15513941
.~
-1
0.010 (152)
~DIA
NOTES: Dumet leads, tin plated Gold plated leads available Hermetically sealed glass package Package weight is 0.19 gram
NOTES: Copper clad steel leads, tin plated Gold plated leads available Hermetically sealed glass package Package weight is 0.14 gram
NOTES: Copper clad steel leads, tin plated Gold plated leads available Hermetically sealed glass package Package weight i. 0.30 gram
TO-39
.336 (8'
M '31~1~:)~
.040(1.02) MAX.
1M' (.
1f
1
" .
';,g (::!
DIA
SEATING PLANE 3 LEADS
. (. -t
--r
i:g(g~1 1
m (om' U nn n U U---=::rMIN.
.600 (12.70)
(0. DIA.
LEAD NO.2
1---+- .200 (5.081!J' .

.100 (2.541T.P.
METAL
LEAD NO.3
NOTES: Leads are solder dipped kovar Lead 3 connected to case This is a standard package and does not fall into the "special" classification Package weight is 0.76 gram
Note: All dimensions in inches (bold) and millimeters (parenthesis).
6-8
TO-18
~~: I: ~~:
DIA.
-f - - l i
~
=,ij~ ~!Iii ~~I

121 I 5 31) 170 (432)
030 (0762) MAX SEATING
PLANET 3 LEADS
-+II
.600(12.70) MIN .
,Ql:(0483)/
.01 (0.4061 DIA.
-~
.100 (254)
T.~ .
.050 (1.27)
T.P.
LEAD NO.1
LEAD NO.3 CASE
NOTES: Leads are gold-plated kovar Lead 3 connected to case 8 mil kovar header Package weight is 0.44 gram
TO-92
.210 (5 331 17014321
----r
L
r-g
I
.475 (12.06) .525(13.39)
r .
205 176 15 (4 2.01-4. 451 DIA j
_SEATING PLANE
nn __ U U U
!
I
3 LEADS
V 0 1 6 x .020 TYP. (0.406xO.508)
135 13431 MIN. 100 1 2541-+",-_
T.P.
NOTES: Package material Is transfer molded thermosetting plastic Package weight Is 0.25 gram Leads are solder dipped.
TO-92 PIN CONFIGURATION

PIN 1
E
PIN 2
PIN 3
L
6-9
LL-34
,170(067)
r-- 160 (063)-
I
QSS( 022)
h=370(146)~ 330(130)
259( 102)
$TO-236AA
0.45(,018)1;1
D.3?i 015)
...."
'"--I
-tJ--]TO-236AB
0.45(.018)+--1
0.37(.015)
~~-~--~
1.40{.055) 2.50( 098)
~~.",...,-!----r
1.40(.055) 2.50(.098)
'9"fi~==F~"Fi~_~71
0.60(,024) 0.51 (020)
_,2.04(.080)
'lOr
31
'9"fi~==F~"Fi~~ 0471 ,.10 0831
:]=
,
1,02(,040)
0.89(.035) 0.60(.024) 0.51 (.020)
1.781-070)
lcJ-~: [Jj
----I 1.20(.047)
a.2SI,OlD)
0.13(.005)
~331
0.10(.004)
~('003)
'-l----I----,=r--i=,,~r30\
010(.004) 0:01(.001)
U5(04112"3(005)
~OO3}
0.601024) 0.45(.018)
NOTES: 1. Meets all JEOEC dimensional requirements lor TO 236AA 2. Controlling dimension: millimeters
NOTES: 1. Dimensioning and !oletanclng per ANSI Y14.5, 1982 2. Controlling dimension: millimeters
SOT-23
TO-236AA Standard
SOT-23
TO-236AB Low Profile
O.2S( 010) 0.10(004)
0.10(.004) 0.01(.001)
NOTE: Footprint is the same lor standard and low prolile package
6-10
8-S01C
t='93'004 ~
O5O(l27~O1.(041} t=
TYP. TYP.
~ oi~~iYp
015103B}
.015(O.38)X45~1
.025{O.64)
.060(1.53)REF.
~;=======:====t;s-T
~--T-
~~------L-~C~~
o 8
TYP. .008(0.20)
.OO4(O.10}
.024(0.61)
.020(0.51)
14-S01C
.015(0.36) OIA.TYP. .01S(O.38) X 450
1 - - - - - - - .340(8,64) - - - - - - - I
REF'1
.D25{O,64)
~:======;:==*~
T' ____ , _
0"- 8"TYP. .ooa(O,2O) .oG4(0.10)
0001"53}REF.
.024(O.61}
.020(0,51)
Note: All dimensions In millimeters (bold) and inches (parenthesis)
6-11
16-S01C
Note. Index area: a notch or Lead One Identification mark shall be located adjacent to Lead One and shall be located within the shaded area shown. Leads are copper alloy, either tin plated or solder coated.
Package plastic material is nonvolac epoxy.

Total flash not to exceed 0.15 (0.006) over body dimensions.
0.25 (O,OO9) I 450 0.50 (D.02D)
~d~~J~E:"ctd
1.27 (0.050) Bse 0.49 (0.020) 0.35 (0,013)
I-
.-~~~_10.00 (Q.394)
_I
0.25 (0.010) 0.19 (0.007)
110(0385)
L--\
~:f====I=~f= ]
rt
Conforms to variation AC of proposed JEDEC outline for 3.75 (0.150) wide body small outline (SO) family.
175 1:35 """" (0:053)
.--, \ g:
.J,.. \...1.27 (0.050) 0.40 (O.015)
\ \
"
c-
All dimensions are typical unless otherwise specified. Controlling dimensions are metric dimensions .
0.25 (O.010) 0.10 (0,003)
4L
, - - - 1.
..
-
16
.050
( 12701
TYP .
,--.019(04831 .015 (03811

TYP.
. 409 (103891 .371 (9423)
8
.350 .250 (8.8901 (63501
TYP.
~;g-~
(88901 (63501
TYP.
.--+!
.006(0.152)
004~(0 102t:)===~C---~t====::l__ ~:~1 (15241

~:~ :~ i~~: -i
.024 (0.6101
TYP.
075 (19051
NOTES: Pins are alloy 42 Package weight is 0.4 gram Hermetically sealed beryllia package
6-12
TO-8S
TO'96
.015(381)
~~' {== . m~
.25016.35)
10~-+ 'iO~~I"'OI16-10)
~
'i:'~~).m~~:~~: --1
MAX.
T~
"'._ _ _ _--'_
TYP._
10 LEADS .02010.511
.01610.41)
~.- MAX.
.370 (9 391...j1_ _ _~
~._ _--'_ :~:~ ~~:~;:
m~~~~oo 040(1.0161 .500(12.701

___ .115 (2.9211 T.P . GLASS
6
SEATING --PLANE
DIA. .230 (5.8421 T.P.
t_
MIN .
H
.006 ( 152) .004 (,092)
.035 (889)
TYP.
~
.260 16.60)--1
.24016.101 .015 (0.216) .075 (0.191)
NOTES: Alloy 42 leads, tin plated Gold plated leads available Hermetically sealed ceramic package Dot or tab indicates lead 1 Package weight is 0.26 gram
',0 36
TP,
~
.____1
v://. ~9 \ V
(. I
.0
7
8
INSULATING STANDOFF SHAPE MAY VARY

(0.7371
g~a~W~
.0;; 1"431
TO-86
NOTES: Kovar leads, gold plated Hermetically sealed package Package weight is 1.32 grams
14
4===::::1
.019(04831 .015 (0.3811 TYP.
.006 (0.152)
If----+-
:~~~~~&-~~J
.004 (0 1021
~t====~I~~~~:~~~
02~~~6351
1--.26016 6041 ~ 240 16096Ig~~:: ~~6:
NOTES: Alloy 42 leads, tin plated Gold plated leads available Hermetically sealed ceramic package Dot or tab indicates lead 1 Package weight is 0.27 gram
6-13
TO-116
.025 (0.64) .020(O~
1--
.770 '19,56)
-- .7.o118.BO)
l::~:IF2~?='=:~~='=:~~'='=:~~~'~:~~:-~~;i
.065 (1,65)
30~ ~0301
~ ~
.080 12.031
.070 (1.781
--l
'200Ts:I~~'01510'38A_o===f.01010.251
MAX.
SEATING PLANE
:oi5Tfi41
L- r11.290
NOM.
.310 ',7.871
1
\=1
17371
.~~!Q~
"
.15013811~' .100 (2.54) .110 (2.80) .090 12.291

TYP,
Il
NOTES: Alloy 42 pins, tin plated Gold plated pins available Transfer moulded OM-6B plastiC package Pins are intended for insertion in hole rows on .300" (7.62) centers They are purposely shipped with "positive" misalignment to facilitate insertion Board drilling dimensions should equal your practice for .020 (0.508) inch diameter pin Package weight is 0.9 gram
.--r '
~ j.-
--.l
\
~,
\'"
.01110281
.009 '(0.23)
II
I
.020 (Q2..!.) .016 10.411
/---
STANDOFF .037 (0.94) WIDTH .02710.691
r-
.375 (9.52) NOM.
I -----1
TO-116-2
I A A , 75
r--
7Sg 1199391----j
(1905)
I
A!\
,-r-------------~
2~1~081 R=j:=r"l=:r=i=F""i=CF'=~CF'~
SEATING LPLANE - .....16~
I ,
NOTES: Alloy 42 pins, tin plated Gold plated pins available Hermetically sealed ceramic package Pins are intended for insertion in hole rows on .300" (7.620) centers They are purposely shipped with "positive" misalignment to facilitate insertion Board-drilling dimensions should equal your practice for .020" (0.508) diameter pin Package weight is 2.0 grams
10"JI'c"401
110
090
(2286)
TVP
19401
(686)
STANDOFF WIDTH
6-14
68
NOTES: Alloy 42 pins, tin plated Gold plated pins available Hermetically sealed ceramic package Pins are intended for insertion in hole rows on .300" centers (7.62) They are purposely shipped with "positive" misalignment to facilitate insertion Boarddrilling dimensions should equal your practice for .020 inch diameter pin (0.51) Package weight is 2.0 grams 'The .037-.027 dimension does not apply to the corner pins
98
025 (0 83S)
020(0S08)~
30" :'2103(6)
mEr:::: Jir:~~~i
0115(1661)
04(511143)
~ 740118796)~
7110 (19304)
-lI I ~
-l
Il,02S I06.'" NOM
020 10 SOB) 010(0254)
~~g:~~~:W ~~
127941 122116)
037 .
D27~1--
II
(02191
020 (0 1>081 OHI(O 4(6)
(0229)
."
00.
NOTES: Alloy 42 pins, tin plated Gold plated pins available Transfer moulded OM-6B plastic package Pins a(e intended for insertion in hole rows on .300" (7.62) centers Leads purposely have a "positive" misalignment to facilitate insertion Boarddrilling dimensions should equal your practice for .020 inch (0.51) diameter pin "'The ..037-.027 (0.94-0.69) dimension does not apply to the corner pins
(09401 (0686)
STANDOff
WIOTH
6-15
TO-33
OPTO-28
1
.02~ r~~:) 1~
j
.200 (508)1.126 (3.200) DIA. .100 (2.540)
. 016(406) DIA.
~~~ :L"
MIN .
-~
I
'.100 (2.54) .050 (1.27)

BASE
EMITTER
NOTES: Kovar leads, gold plated Hermetically sealed package Package weight is 0.36 gram
COLLECTOR
\Y L'
45
Package weight is 1.22 grams
, ~ .080 (2032)
FlAT
OPTO-26
.200 (5.08)1
LENS
DIA'~
.210 (5.334)
.105 (2.667)
REF.
u...."1-rr....,,...J~556)
~ ~ ~
.400 (10.16)
:g~~m~~~ ~ ~._~J~'
DIA.
_1_
BASE~.
EMITTER-
COLLECTOR
45 \
. ""
//
,.080 (2.032)
FLAT
Note: All dimensions in Inches (bold) and millimeters (parenthesis).
6-16
Index and Device Crossreference Device Selection Guides Product Information Product Family Curves Test Circuits
"port"pin"
Information and Outlines
High Reliability Information Dice and Wafer Information Field Sales Offices
FAIRCHILO
Discrete Small Signal Hi-Reliability Devices
Fairchild Discrete Small Signal Division offers a complete line of Hi-Reliability devices produced in modern production facilities at San Rafael, California and Cebu, the Phillipines. Although emphasis is placed on designing and built-in quality and reliability, a complete reliability screening program has been established. Most products offered in this data book are available in all of the following Hi-Rei configurations:
Military Qualified Transistors

Qualified Products list Device No. 2N718A 2N930 2N1613 2N2218A 2N2219A 2N2221A 2N2222A 2N2369A 2N2484 2N2904A 2N2905A 2N2906A 2N2907A 2N2920 2N3019 2N3700 2N2060 1N457 1N458 1N459 1N483B 1 N485B 1N486B 1N914 1N3064 1N3070 1N3595 1N3600 1N4148-1 1N4150-1 1N4306 1N4307 1N4376 1N4454-1 1N4938-1 1N5768 1N5770 1N5772 1N5774 1 N6100 1N6101 Jan X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X X TX X X X X X X X X X X X X X X X X X TXV X
Hi-Rei Wafers and Die Military Qualified Diodes & Transistors Source Controlled Devices (SCD) Custom "Level S" Processing
Hi-Rei Wafers and Die Refer to the DICE section of this data book for information on WAFER and DIE available in four standard configurations. Military Qualified Diodes and Transistors Fairchild maintains qualified status for all the devices listed in Tables 1 & 2. Most devices are available in three standard quality levels, JAN, JANTX, and JAN TXV, as defined by Mil-Std-19500. For short form information, Refer to Section 2, pages 10, 11, 12, 13, 19 and 20. Source Controlled Devices (SCD) Many devices listed in this data book are available with processing defined and controlled by customer documents, commonly referred to as SCD's. Using the Fairchild-developed MODULAR PROCESSING table in this section, along with the standard test methods and conditions outlined in this section, complete custom processing can be designed. Fairchild will conform to the requirements of furnished documents, however, reference to modules within the MODULAR PROCESSING sequence (see example) in the SCD as equal to or exceeding the requirements specified will expedite quote response and product delivery. Custom "Level S" Processing Top of the line custom built and processed devices, requiring baseline documentation, wafer lot acceptance and traceability, clean room assembly and Level S process controls and screening are available. Consult the factory for details.
X X X X X X X X X X X X X X
X X X X X X X X X X X X X X X X X X X X X
X X X X
X X X X X X X X X X X X X
7-3
Fairchild Standard Test Methods & Conditions

TEST
Internal Visual High Temp Storage Temp Cycle Constant Acceleration Fine Leak Gross Leak HTRB Burn-In
MIL-STD-750 METHOD
2072,2073, 2074 1032 1051 2006 1071 1071 1038 & 1039
TEST CONDITION
COMMENTS
200 C, 48 hrs. C -65 C to +200 C, 20 cyc, 15 min. at extremes 30 Kg, Y1, one minute does not apply. (Not applicable to 00-35 pkg.) G C 5x10-B atmos cc/sec. (Not applicable to 00-35 pkg.) Test condo E for glass diodes 150C, 48 hrs, 80% VeB (transistor), 80% VA (Diode) min. (use 72 hrs if not followed by Power Burn-In) B Transistors - 160 hrs Diodes - 96 hrs 2 views
Power Burn-In X-Ray External Visual Group A Group B Group C Solderability Resistance to Solvents
1038 & 1039 2076 2071
2026 1022
Mil-Std-19500 Table III, JAN TXV Mil-Std-19500 Table IVb Mil-Std-19500 Table V LTPD = 15, Electrical rejects may be used. LTPD = 15, Electrical rejects may be used.
7-4
ASSEMBLY LOCATION SELECT ONE
.
..
r11
r-U-SABUILD-
--l,'--______
--l
c~
:Ie
1!.Q,
r-------~~------, ,----~~--_,r-----~~----_,r-------~~------~a
ASSEMBLY FLOW SELECT ONE INTERNAL VISUAL HIGH TEMP STORAGE TEMPERATURE CYCLE CONSTANT ACCELERATION FINE LEAK GROSS LEAK NO INTERNAL VISUAL HIGH TEMP STORAGE TEMP CYCLE CONSTANT ACCELERATION FINE LEAK GROSS LEAK
;. ;.
:I ~
Q,
!a, a
CD S"
!!: fil III
Q,
ELECTRICAL SELECTION SELECT ONE
..
-_.
25C D.C. TEST HTRB BURN-IN 25C D.C. TEST 10% P.D.A. CUSTOM MARK GROUP A SAMPLE
8. 1/1
:T
-25C D.C. R&R HTRB BURN-IN 25C D.C. R&R POWER BURN-IN 25C D.C. R&R CUSTOM MARK GROUP A SAMPLE
Q,
.
III :I
SCREENING SELECT ONE
..
Gol
25C D.C. TEST HTRB BURN-IN 25C D.C. TEST POWER BURN-IN 25C D.C. TEST DRIFT CRITERIA CUSTOM MARK GROUP A SAMPLE
-- - - - - _ .. _------
n o :I 9:
~
:I
i"
C1I
"',"
::~~~~~=;~R MORE
NONE
C!11 X-RAY PIND C!21 100% TEMP TESTS ..
I I
1 ] 1
031
100%
A.c.1
C!41 GROUP B C!51 GROUP C
'<!, 0CD m CIJ_

-'CD n:::J
=3
g:(/)
-'mCD
~Ci1
~~ In
001 NONE 011 ATTRIBUTES DATA
I
1 1
CD(/) < _.
DATA/SPECIAL INSTRUCTIONS SELECT ONE OR MORE
~21 ~31
VARIABLES DATA CORRELATION UNITS
(541
~61
IN-PROCESS SOURCE INSP. 1
051 OUTGOING SOURCE INSP. GENERIC GROUP B&C RADIATION SAMPLES
~71
Modular Processing Examples
2N2222, 1, 10 21, 32, 41, 44, 45, 51, 52, 55

2N2222 U.S.A. assy. Internal visual High temp storage Temp cycle Fine leak Gross leak Select electrical screen 25C DC R&R HTRB burn-in 25C DC R&R Power burn-in 25C DC R&R Custom Mark Group A Sample X-Ray PIND Group B Group C Attributes data Variables data Outgoing source inspection
1N4148, 2, 13,21,30,40,56 1N4148

Offshore assy. No internal visual High temp storage Temp cycle Gross leak Select electrical screen HTRB burn-in 25C DC R&R Power burn-in 25C DC test Drift criteria Custom mark Group A sample Generic Gp B & C
2N2222, 2, 12, 21, 33, 40, 56

2N2222 Offshore assy. No internal visual Select electrical screen Custom mark Group A Generic Gp B & C
7-6
Index and Device Crossreference Device Selection Guides Product Information Product Family Curves Test Circuits ring Information and Outlines High Reliability Information Dice and Wafer Information Field Sales Offices
FAIRCHILD
Wafer And Dice Information
Fairchild's Small Signal Discrete Division is now servicing the hybrid applications of Commercial, Aerospace & Defense marketplaces with diode and transistor chips. All die types from diode and transistor packaged devices are offered in levels ranging from electrically probed wafers for volume commercial applications to individually processed die for ultra high reliability applications specifying Mil-Std-883, Method 5008 Requi rements.
Standard Manufacturing Flows
Die Description
Physical properties: Topside metallization is aluminum, aproximately 1 micron thick, excellent for all wire bonding techniques. Backside metalizaton of gold approximately 8000 Angstroms offers ease of die bonding for eutectic or epoxy with good thermal characteristics. Nitride passivation surface protection. Die size per die pictorial diagrams.
Product Selection Product electrical performance may be selected in
A standard processing die flow compatible with manufacturing capabilities satisfies commercial and high reliability requirements. Variations of the standard flow may be available to satisfy specific Source Control Drawing requirements.
Standard Wafer and Die Flow
one of two ways: 1) Using the Product Selection guide in this section, select the electrical characteristics meeting or exceeding your requirements. The corresponding die type (4 digit number) should then be added to the prefix designating the level of product required. 2) Knowing the JEDEC device designation, select the corresponding die type using the Device Cross Reference guide in this section. Add the prefix designation for complete product description.
Processing Level may be determined from the Die Flow diagram in this section. Four levels of product are available as standard. Prefix Description
FDPXXXX ..._-=~:..:..:..:..:.::c-,--_
FDCXXXX ...- - - - - - - - 1
FDP, FDC, FHC, FHS,
Probed Wafers Probed, Visualed DICE Probed, Visualed, Group A Sampled DICE Probed, Visualed, Group A & B Sampled DICE
FHCXXXX .-_..:..:..:~::...:..c:.::..;'----I
In addition, custom devices are available including special probe parameters, wafer lot acceptance, custom packaging, and radiation sample testing. Consult factory for details.
FHSXXXX .--..:..:..:.;.:..:::..:..:..----'
8-3
Additional Specifications
1) 100% Probe - 25C DC parameters only. 2) 100% Visual - Mil-Std-883 Method 2010. 3) Group A-25 C DC parameters - LTPD = 10%. 25C AC parameters - LTPD = 15%. 4) Group 8 - Mil-Std-883 Method 5008. 5) Packaging - Per figure 1. 6) Data - Attributes data supplied with FHC (Group A) and FHS (Group A and 8).
Ordering Information 1) Specify prefix from flow chart. 2) Add Die Type from cross reference chart or selection guide. 3) Specify quantity of electrically good die (EGD) required. This applies to both wafers and dice.
Figure 1
CAVITY PACK ~ Dice are Placed in

Individual Compartments. The Plastic Snap Clips Permit Inspection and Resealing.
WAFER PACK - Entire Wafer is Sandwiched Between Two Pieces of Mylar and Vacuum Sealed in a Plastic Envelope.
VIAL PACK . The Vial is Filled with FREON TF and a Plastic Cap Seals the Vial. The Freon Acts as a Motion
Retarder and Cleansing Agent.
8-4
Die Sales Cross Reference Transistors
2N1893 2N1974 2N1984 2N1986 2N1988 2N1990 2N2192 2N2192A 2N2205 2N2219 2N2219A 2N2221 2N2221A 2N2222 2N2222A 2N2242 2N2270 2N2297 2N2369 2N2369A 2N2484 2N2651 2N2696 2N2710 2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N2927 2N3013 2N3019 2N3020 2N3072 2N3073 2N3107 2N3108 2N3109 2N3120 2N3133 2N3134 2N3135 2N3136
149B 149B 149B 149B 149B 149B 149A 149A 162A 145A 145A 145B 145B 145C 145C 161A 145B 149B 132A 132A 107B 162A 212B 162A 212B 212B 212A 212A 2128 2128 212A 212A 212B 162A 149A 149B 212B 212B 149A 149B 149A 2128 212B 212A 212B 212A
2N3251 2N3304 2N3439 2N3440 2N3700 2N3701 2N3724 2N3725 2N3903 2N3904 2N3905 2N3906 2N3946 2N3947 2N3962 2N3964 2N4013 2N4014 2N4030 2N4031 2N4032 2N4033 2N4036 2N4037 2N4123 2N4124 2N4125 2N4126 2N4137 2N4208 2N4209 2N4234 2N4235 2N4236 2N4237 2N4238 2N4239 2N4400 2N4401 2N4402 2N4403 2N4409 2N4410 2N4896 2N5042 2N5087
215A 292B 333A 333A 149A 149B 139B 139A 144B 144A 215B 215A 144B 144A 219B 219A 139B 139A 224B 224B 224A 224A 224B 224B 144B 144A 215B 215A 132A 292B 292A 414B 414B 414B 314B 314B 314B 145B 145A 212B 212A 147A 147A 340A 224B 219A
2N5089 2N5209 2N5210 2N5220 2N5223 2N5224 2N5225 2N5226 2N5227 2N5228 2N5270 2N5320 2N5321 2N5322 2N5323 2N5400 2N5401 2N5415 2N5416 2N5550 2N5679 2N5680 2N5681 2N5682 2N5769 2N5771 2N5772 2N5830 2N5831 2N5833 2N5961 2N5962 2N699 2N699B 2N706 2N708 2N720 2N720A 2N744 2N870 2N914 2N916 2N930 2N930A 2N947 2N957
155A 155B 155B 145B 144A 162A 145B 212B 215A 292B 145B 314B 314B 414B 414B 232A 232A 443A 443A 147A 414A 414A 314A 314A 132A 292A 162A 147A 147A 147A 107B 107A 149B 149B 162A 162A 149B 149B 132A 149B 162A 144B 107C 107C 162A 144A
8-5
Die Sales Cross Reference cont. Transistors
MPS3563 MPS3638 MPS3639 MPS3640 MPS3646 MPS3702 MPS3703 MPS3704 MPS4355 MPS4356 MPS5172 MPS5551 MPS6515 MPS6521 MPS6535 MPS6560 MPS6562 MPS6571 MPS6590 MPS6591 MPS918 MPSA05 MPSA06 MPSA10 MPSA12 MPSA13 MPSA14 MPSA18 MPSA20 MPSA42 MPSA43 MPSA55 MPSA56 MPSA70 MPSA92 MPSA93 MPSL01 MPSL51 PE4002 PE4010 PE4020 PE7058 PE7059 PE8050 PE8052
121A 212A 292B 292B 162A 212B 212B 145A 224A 224B
144A,
147A 155B 155A 212B 124A 202A 155A 147A 147A 121A 150A 150A 144A 164A 164A 164A 107A 144A 176A 176A 224A 224A 215A 276A 276A 147A 232A 107B 107B 107B 176A 176A 124A 124A
PE8550 PE8552 PN3565 PN3567 PN3569 PN3638A PN3643 PN4121 PN4248 PN4249 PN4250 PN4258 PN4274 PN4275 PN4354 PN4355 PN4356 PN4888 PN4889 PN4916 PN4946 PN4965 PN5128 PN5130 PN5133 PN5134 PN5135 PN5136 PN5137 PN5138 PN5139 PN5142 PN5143 PN5770 PN5855 PN5857 PN5965 PN6076
Diodes
202A 202A 155B 145B 145A 212A 145A 215B 219B 219B 219A 292B 132A 132A 224A 224A 224B 232A 232A 215B 145A 219B 145B 121A 107B 132A 145A 145B 145B 219B 215B 212B 212A 121A 224B 224B 147A 215A
1N3064 1N3070 1N3595 1N3600
1225 1425 1525 1225
1 N4009 1N4148 1 N4149 1 N4150 1N4151 1N4154 1N4376 1 N4446 1N4447 1N4448 1N4454 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A 1N4606 1N482B 1N483B 1N485B 1N493B 1N628 1N659 1N660 1N661 1 N914 1N914A 1N914B 1N916 1N916A 1N916B FDH325 FDH333 FDH425 FDH444 FDH625 FDH666 FD725 FD777 FJT1100 FJT1101
1225 1225 1225 1225 1225 1225 1725 1225 1225 1225 1225 1525 1525 1525 1525 1525 1525 1525 1225 1525 1525 1525 1425 1425 1225 1425 1425 1225 1225 1225 1225 1225 1225 1525 1525 1425 1425 1225 1225 1725 1725 1325 1325
8-6
Diode Dice Selection Guide

Device Bv
VF 100 rnA <1.0V 100 rnA <1.0V 100 rnA <1.0V 50 rnA <1.1 V 50 rnA <1.1 V
IR 150 V <100 nA 175 V <25 nA 50V <100 nA 10 V <100 nA 5.0V <10 pA
TRR 10 rnA <50 ns
CAP
1425 1525 1225 1725 1325
100 p.A >200 V 100 p.A >200 V 5.0p.A >75 V 5.0pA >20 V 5.0pA >30 V
Co < 2.5 pF Co < 5.0 pF Co < 2.5 pF Co < 1.2 pF Co < 2.0 pF
10 rnA <4.0 ns 10 rnA <0.8 ns -
Diode Array Die Selection Guide

Product Bv (Min) @IR
IR (Max) @VR 100 nA 50V 25 nA 20 V 100 nA 50 V 100nA 50 V 100nA 50 V 100 nA 50 V 100 nA 50 V
VF (Max) @IF 1.0 V 100 rnA 1.0 V 100 rnA 1.0 V 100 rnA 1.0 V 100 rnA 1.0 V 100 rnA 1.0 V 100 rnA 1.0 V 100 rnA
02MO 04MO 08MO 16MO 18MO 19MO 28MO
60V 100 pA 75V 5.0 pA 60V 10 pA 60V 10 pA 60V 10 pA 60V 10 pA 60V 10 pA
VF (Max) @IF -
TRR (Typ) IF =IR 20 nS 200 rnA 6.0 ns 10 rnA 20 ns 200 rnA 20 ns 200 rnA 20 ns 200 rnA 20 ns 200 rnA 20 ns 200 rnA
CAP (Typ) @VR
4.0 pF OV 4.0 pF OV 4.0 pF OV 4.0 pF OV 4.0 pF OV 4.0 pF OV 4.0 pF OV
1.5 V 500 rnA 1.5 V 500 rnA 1.5 V 500 rnA 1.5 V 500 rnA 1.5 V 500 rnA
Refer to schematic diagrams and topography for chip configuration.
8-7
Diode Array Schematics and Topography
T
~
i'
42.5
'I
r-- ------j -[][J

23
_'--------I'= - , 3 4
, .=-=
DUG L G
02MO
~ []~ ~
j
[J0
04MO
DG
0 I D [J 00 LD~8
08MO 16MO
8 fD 0 ~D
'1
r---
60
-1
141GD
. ffffffff" ffffffft r
r------- 41
~
-I D~D
~
~]Da~:
r---- 54
'1
rCI. 'lJ
18MO
[J D D~~
19MO
lB~B
28MO
luDD
8-8
Die Sales Cross Reference Diode Arrays
FSA1410 FSA1411 FSA2002 FSA2500 FSA2501 FSA2502 FSA2503 FSA2504 FSA2509 FSA2510 FSA2563 FSA2564 FSA2565 FSA2566 FSA2619 FSA2620 FSA2621 FSA2702 FSA2703 FSA2704 FSA2705 FSA2719 FSA2721
18MO 19MO 19MO 16MO 16MO 16MO 28MO 28MO 28MO 16MO 19MO 18MO 19MO 18MO 04MO 04MO 04MO 02MO 02MO 02MO 04MO 04MO 04MO
8-9
Transistor Dice Selection Guide

Product
ICEs lEBO HFE HFE HFE
VCEIS1
107A 1078 107C 121A 124A 132A 139A 1398 144A 1448 145A 1458 147A 149A 1498 150A 155A 1558 162A 164A 176A
45 V <10 nA 45V <10 nA 45 V <10 nA 25 V <10 nA 20V <75nA 20 V <200 nA 60V <250 nA 40V <250 nA 40V <10 nA 40V <10 nA 50 V <15 nA 50 V <15 nA 120 V <50 nA 80V <10 nA BOV <10 nA 60V <20 nA 45 V <10 nA 45 V <10 nA 20 V <50 nA 15 V <100 nA 200 V <100 nA
5.0V <10 nA nA <10 nA 5.0V <10 nA 3.0V <10 nA 4.0 V <50 nA 4.0V <500 nA 4.0V <250 nA 4.0V <250 nA 5.0V <10 nA 5.0V <10 nA 5.0V <10 nA 5.0 V <10 nA 5.0 V <50 nA 5.0V <10 nA 5.0V <10 nA 5.0 V <10 nA 6.0 V <10nA 6.0 V <10 nA 4.0 V <80 nA 10 V <50 nA 6.0 V <50 nA
10 pA/5.0 V
100 pA/5.0 V
>450 5.0V 200 - 500

10 pA/5.0 V
500 - 1200
10 pA/5.0 V
10 mA/5.0 V 700 - 1400

100 pA/5.0 V
225 - 500
250 - 700
100 pA/5.0 V 10 mA/5.0 V 100 - 300 125 - 400 200 - 600 2.0 mA/6.0 V 8.0 mA/l0 V 8.0 mA/l0 V >60 <190 >75 10 mA/l.0 V 100 mA/l.0 V 1.0 A/l.0 V 50 - 180 65 - 180 40 - 180 10 mA/O.35 V 10 mA/l.0 V 30 mA/OA V >40 <120 >30 100 mA/l.0 V 100 mA/l.0 V 500 mA/l.0 V >60 <150 >35 lob mA/l.0 V 100 mA/l.0 V 500 mA/l.0 V >60 <150 >35 1.0 mA/l.0 V 10 mA/l.0 V 100 mA/l.0 V 120 - 300 >90 >30 1.0 mA/l.0 V 10 mA/l.0 V 100 mA/l.0 V 50 - 150 >35 >15 100 pA/l0 V 150 mA/l.0 V 150 mA/l0 V <300 >100 >40 100 pA/l.0 V 150 mA/l.0 V 150 mA/l0 V 50 - 120 >20 <150 10 mA/5.0 V 1.0 mA/5.0 V 10 mA/5.0 V >80 <250 >80 100 pA/l0 V 150 mA/l0 V 150 mA/l0 V >50 >100 <300 100 pA/10 V 100 pA/l0 V 150 mA/l0 V <100 <120 >30 100 pA/5.0 V 100 pA/l.0 V 500 mA/l0 V 50 - 300 >25 >20 100 pA/5.0 V 1 mA/5.0 V 2.0 mA/l0 V 400 - BOO >450 <800 100 pA/5.0 V 100 pA/5.0 V 2.0 mA/l0 V 250 - 300 >100 <300 30 mA/OA V 30 mA/l.0 V 100 mA/0.5 V <120 >25 >40 10 mA/5.0 V 10 mA/5.0 V 100 mA/5.0 V >20K <lOOK >20K 30 mA/l0 V 30 mA/l0 V 150 mA/20 V >50 <200 >15
10 mA/0.5 mA <0.2 V 10 mA/5.0 V <0.2 V 10 mA/0.5 mA <0.2 V 10 mA/l.0 mA <0.2 V 1.0 A/l00 mA <0.5 V 100 mA/l0 mA <0.5 V 500 mA/50 mA <0.5 V 500 mA/50 mA <0.42 V 50 mA/5.0 mA <0.3 V 50 mA/5.0 mA <0.3 V 150 mA/15 mA <0.22 V 150 mA/15 mA <0.22 V 50 mA/5.0 mA <0.2 V 150 mA/15 mA <0.2 V 150 mA/15 mA <0.2 V 150 mA/15 mA <0.4 V 50 mA/5.0 mA <0.3 V 50 mA/5.0 mA <0.3 V 100 mA/l0 mA <0.28 V 100 mA/lOO pAl <1.6V 20 mA/2.0 mA <0.5 V
8-10
VBE1S)
10 rnA/0.5 rnA 0.7 V - 0.9 V
FT
>100 MHz
LVCEO
10 rnA >lOV >100 MHz >lOV 10 rnA >60 V 3.0 rnA >15 V 10 rnA >25 V 10 rnA >15 V 10 rnA >50 V 10 rnA >40 V 1.0 rnA >40 V 1.0 rnA >40 V 10 rnA >40 V 10 rnA >50 V 10 rnA >180 V 10 rnA >80 V 10 rnA >80 V 10 rnA >80 V 1.0 rnA >45 V 1.0 rnA >50 V 10 rnA >20 V 10 rnA >30 V 1.0 rnA >300 V
TOff
10 rnA/0.5 rnA 10 rnA/0.5 rnA 0.7V-0.9V 10 rnA/0.5 rnA 0.7V-0.9V 10 rnA/1.0 rnA <0.9 V 1.0 A/100 rnA <1.2 V 10 rnA/1.0 rnA 0.7 V - 0.9 V 500 rnA/50 rnA <1.1 V 500 rnA/50 rnA 0.9V-1.1V 50 rnA/5.0 rnA <0.9 V 50 rnA/5.0 rnA <0.9 V 150 rnA/15 rnA 0.75 V - 0.95 V 150 rnA/15 rnA 0.75 V - 0.95 V 50 rnA/5.0 rnA <1.0V 150 rnA/15 rnA <0.9 V 150 rnA/15 rnA <0.9 V 150 rnA/15 rnA <0.9 V 50 rnA/5.0 rnA <1.0V 50 rnA/5.0 rnA <1.0 V 100 rnA/10 rnA <1.2 V 100 rnA/100 p,A <1.6V 20 rnA/2.0 rnA <0.9 V >100 MHz >750 MHz 100 MHz >500 MHz >300 MHz >300 MHz >250 MHz >200 MHz >300 MHz >250 MHz 100-300 MHz >100 MHz >100 MHz >100 MHz >300 MHz >300 MHz >350 MHz >125 MHz >50 MHz
10 rnA
-
<18 nS <60 ns <60 ns <250 ns <250 ns <250 ns <250 ns

-
250 - 1000 ns <600 ns

-
<25 ns
-
8-11
Transistor Dice Selection Guide

Product
ICES lEBO HFE HFE HFE VeEllll
202A 212A 2128 215A 2158 219A 2198 224A 2248 232A 276A 292A 2928 314A 3148 316A 333A 340A 414A 4148 443A
20V <100 nA 50 <35 nA 50V <35nA 30V <25 nA 30V <25nA 40V <10 nA 50V <10 nA 75 V <50 nA 75V <50 nA 120 V <50 nA 200 V <50nA 10 V <10 nA 10 V <10 nA 120 V <1.0 !lA 100 V <100 !lA 90V <10 !lA 450 V <20 !lA 60V <2OnA 120 V <1 !lA 100 V <100 !lA 300 V <50 IlA
4.0V <100 nA 5.0 V <50 nA 5.0 V <50 nA 5.2 V <25 nA 5.2 V <25 nA 5.0V <10 nA 5.0 V <10 nA 5.0 V <10 nA 5.0V <10 nA 4.0 V <10 nA 5.0 V <10 nA 3.0 V <50 nA 3.0 V <50 nA 5.0 V <100 nA 5.0 V <100 nA 6.0V <100 !lA 6.0 V <20 !lA 4.0 V <1.0 !lA 7.0 V <1.0 !lA 6.0 V <10 IlA 4.0 V <500 nA
10 rnA/l.0 V >50 100 !lA/1.0 V >75 100 !lA/l.0 V >40 100 !lA/l.0 V >100 100 !lA/1.0 V >40 10 !lA/5.0 V 250 - 500 100 !lA/5.0 V >100 100 !lA/5.0 V >75 1 rnA/l0 V >40 10 rnA/5.0 V >70 1 rnA/l0 V >30 10 rnA/0.3 V >50 10 rnA/0.3 V >30 250 rnA/2.0 V >40 500 rnAl4.0 V >40 500 rnA/2.0 V >30 20 rnAll0 V >40 40 rnA/l.0 V >50 250 rnA/2.0 V >40 10 rnA/4.0 V >40 5.0 rnA/l0 V >25
100 rnA/l.0 V 100 rnA/l.0 V <200 >65 150 rnAl2.0 V 150 rnA/l0 V >100 <300 150 rnA/2.0 V 150 rnA/l0 V >50 <120 1.0 rnA/5.0 V 10 rnA/l.0 V <300 >120 10 rnA/l.0 V 10 rnA/5.0 V >70 <150 100 IlA/5.O V 10 rnA/5.0 V 250 - 700 >250 100 !lA/5.0 V 500 !lA/2.0 V <300 >125 100 rnAll.0 V 100 rnA/5.0 V >100 <300 100 rnA/l.0 V 100 rnA/5.0 V <120 >50 10 rnA/5.0 V 50 rnA/5.0 V <180 >50 10 rnA/l0 V 30 rnA/10 V 40 - 400 30 - 150 10 rnA/0.3 V 50 rnA/l.0 V >40 <120 10 rnA/3.0 V 50 rnA/l.0 V <120 >30 500 rnA/3.0 V 500 rnA/3.0 V <150 >30 500 rnA/4.0 V 1.0 All.0 V <130 >15 2.0 A/2.0 V 2.0 A/2.0 V <375 >30 20 rnA/l0 V 100 rnAl2.0 V <160 >10 2.0 A/2.0 V 2.0 Al2.0 V >100 <300 1.0 Al2:0 V 250 rnA/2.0 V <150 >15 250 rnA/l.0 V 500 rnA/4.0 V 30 - 150 40 - 130 50 rnA/l0 V >30
200 rnA/20 rnA <0.15 v 150 rnA/15 rnA <0.4 V 150 rnA/15 rnA <0.4 V 50 rnA/5.0 rnA <0.3 V 50 rnA/5.0 rnA <0.3 V 10 rnA/0.5 rnA <0.25 V 10 rnA/0.5 rnA <0.2 V 150 rnA/15 rnA <0.15 V 150 rnA/15 rnA <0.15 v 50 rnA/5.0 rnA <0.25 V 20 rnA/2.0 rnA <0.4 v 10 rnA/l.0 rnA <0.18 V 10 rnA/l.0 rnA <0.15 v 500 rnA/SO rnA <0.3 V 1.0 A/O.l A <0.6 V 2.0 A/O.l A <0.5 V 50 rnA/4.0 rnA <0.5 V 5.0 A/0.5 A <1.0V 1.0 A/0.1 A <1.0V 1.0 A/0.125 A <0.6 V 50 rnA/l0 V 50 rnA/5.0 rnA <1.4V <120
8-12
VBE(S}
FT
>100 MHz >250 MHz >200 MHz >450 MHz >450 MHz >SO MHz >40 MHz
LVCEO
Tofl
200 rnA/20 rnA <0.9 V 150 rnA/15 rnA <0.95 V 150 rnA/15 rnA <0.4 V 50 rnA/5.0 rnA <0.95 V 50 rnA/5.0 rnA <0.95 V 10 rnA/0.5 rnA <0.9 V 100 rnA/D. 5 rnA <0.9 V
10 rnA >25 V 10 rnA >60 V 10 rnA >60 V 10 rnA >45 V 10 rnA >45 V 5.0 rnA >50 V >GO V 5.0 rnA >80 V 10 rnA >80 V 1.0 rnA >150 V 10 rnA >300 V 3.0 rnA >15 V 3.0 rnA >12 V 10 rnA >60 V120 V 30 rnA >BOV 50 rnA >75 V 15 rnA >350 V 50 rnA >GO V 10 rnA >120 V 10 rnA >80 V 5.0 rnA >350 V
<100 ns <100 ns <325 ns <300 ns

-
150 rnA/15 rnA 150 - 500 MHz 0.95 V 150 rnA/15 rnA 150 - 500 MHz 0.95 V 50 rnA/5.0 rnA <1.0 V 20 rnA/2.0 rnA 0.9 V 10 rnA/1.0 rnA 0.95 V 10 rnA/1.0 rnA <0.95 V 500 rnA/50 rnA <1.2 V 1.0 A/D. 1 A <1.5 V 2.0 A/D. 1 A <1.5 V 50 rnAl4.0 rnA <1.3 V 5.0 A/D. 5 A <1.6 V 1.0 A/0.2 A <1.2 V 1.0 A/D. 1 A <1.5 V 50 rnA/5.0 rnA <1.5 V >100 MHz >50 MHz >850 MHz >900 MHz >40 MHz >50 MHz >30 MHz >15 MHz >80 MHz >30 MHz >50 MHz >15 MHz
<400 ns <400 ns
-
<20 ns <20 ns
<800 ns
<10 !.IS
-
<1000 ns
-
8-13
02MODIE
16MODIE
8-14
1225 DIE
1-------11-------1
28MO DIE
1425DIE
1---------15------------~
8-15
1525 DIE
121 DIE
1-------17.5-----~
107DIE
8-16
132DIE
144DIE
r
l
1--1.
----18--------1.1
8-17
147DIE
155DIE
149DIE
162DIE
1-------13.5------;
8-18
164DIE
202DIE
il.:~;~ ~ L
."""f'<,'",I".'"
176DIE 212DIE
fr
~1.--------401--------~
II
8-19
215DIE
219DIE
232DIE
8-20
276 DIE
292DIE
8-21
NOTES
FAIRCHIL.D
Field Sales Offices

United States and Canada
Alabama
illinois
Huntsville Office 555 Sparkman Drive, Suite 1030 Huntsville, Alabama 35805 Tel: 205-837-8960
Arizona
Itasca Office 500 Park Blvd., Suite 575 Itasca, Illinois 60143 Tel: 312-773-3133 TWX: 910-651-0120
Indiana
New York Endwell Office 3215 East Main Street Endwell, New York 13760 Tel: 607-757-0200
Phoenix Office 9201 N. 25th Ave., Suite 215 Phoenix, Arizona 95021 Tel: 602-943-2100 TWX: 910-950-0199
California Auburn Office
Indianapolis Ollice 7202 N. Shadeland, Room 205 Castle Point Indianapolis, Indiana 46250 Tel: 317-849-5412 TWX: 810-260-1793
Iowa
Fai rport Office 815 Ayrault Road Fairport, New York 14450 Tel: 716-223-7700 Hauppauge Office 300 Wheeler Road, Suite 201 Hauppauge, New York 11788 Tel: 516-348-0900 TWX: 510-221-2183 Poughkeepsie Office
19 Davis Avenue
320 Aeolia Drive Auburn, California 95603 Tel: 916-823-6664 Costa Mesa Office 3505 Cadillac Avenue Suite 0-104
Costa Mesa, California 92626
Cedar Rapids Office 373 Collin Rroad N.E., Suite 200 Cedar Rapids, Iowa 52402 Tel: 319-395-0090
Tel: 714-241-5600 TWX: 910-595-1109 Encino Office Crocker Bank Bldg. 15760 Ventura Blvd., Suite 1027 Encino, California 91436 Tel: 818-990-9800 TWX: 910-495-1176
Mountain View Office
Kansas Overland Park Office 8600 West 110th Street, Suite 209 Overland Park, Kansas 66210 Tel: 913-451-8374
Wichita Office 2400 Woodlawn, Suite 221 Wichita, Kansas 67220 Tel: 316-687-1111 TWX: 710-826-9654
Maryland
Poughkeepsie, New York 12603 Tel: 914-473-5730 TWX: 510-248-0030

North Carolina
Raleigh Office 5970-C Six Forks Road Raleigh, North Carolina 27609 Tel: 919-848-2420
Ohio
441 N. Whisman Road Mountain View, California 94042 Tel: 415-962-8200 TWX: 910-338-0241 San Diego Office 4355 Ruffin Road, Suite 100 San Diego, California 92123 Tel: 619-560-1332
Colorado
Columbia Office 2000 Century Plaza, Suite 114 Columbia, Maryland 21044 Tel: 301-730-1510 TWX: 710-826-9654
Massachusetts
Cleveland Office 6133 Rockside Road, Suite 407 Cleveland, Ohio 44131 Tel: 216-447-9700 Deyton Office 7250 Poe Avenue, Suite 260 Dayton, Ohio 45415 Tel: 216-890-5813
Oregon
Waltham Office 1432 Main Street Waltham, Massachusetts 02154 Tel: 617-890-4000
Michigan
Denver Office 10200 E. Girard, Suite 222, Bldg. B Denver, Colorado 80231 Tel: 303-695-4927
Connecticut
Portland Office 6600 SW. 92nd Ave., Suite 27 Portland, Oregon 97223 Tel: 503-244-6020 TWX: 910-467-7842
Pennsylvania
Farmington Hills Office 21999 Farmington Road Farmington Hills, Michigan 48024 Tel: 313-478-7400 TWX: 810-242-2973
Minnesota
Woodbridge Office 131 Bradley Road Woodbridge, Connecticut 06525 Tel: 203-397-5001
Rorlda
Minneapolis Office 3600 W. 80th Street, Suite 590 Bloomington, Minnesota 55431 Tel: 612-835-3322 TWX: 910-576-2944
New Jersey
Willow Grove Office Willow Wood Office Center Suite 110 3901 Commerce Ave. Willow Grove, Pennsylvania 19090 Tel: 215-657-2711
Altamonte Springs Office Crane's Roost Office Park 399 Whooping Loop Altamonte Springs, Florida 32701 Tel: 305-834-7000 TWX: 810-850-0152 Ft. Lauderdale Office 450 Fairway Dr., Suite 107 Deerfield Beach, Florida 33441 Tel: 305-485-7970 TWX: 510-995-4098
Georgia Norcross Office
New Jersey Office Vreeland Plaza 41 Vreeland Avenue Totowa, New Jersey 07512 Tel: 201-256-9011
Texas Austin Office 8240 Mopac Expressway, Suite 270 Austin, Texas 78759 Tel: 512-346-3990
Houston Office
3220 Pointe Parkway, Suite 1200 Norcross, Georgia 30092 Tel: 404-441-2740 TWX: 810-766-4952
New Mexico Albuquerque Office North Building 2900 Louisiana N.E., Suite 0 Albuquerque, New Mexico 87110 Tel: 505-884-5601 TWX: 910-379-6435
9896 Bissonnet-2, Suite 470 Houston, Texas 77036 Tel: 713-771-3547 TWX: 910-881-8278 Richardson Office 1702 North Carolina Street, Suite 101 Richardson, Texas 75080 Tel: 214-234-3811 TWX: 910-867-4824
For additional information call Fairchild's Information Center 1-800-555-4443.
9-3
Sales Offices United States and Canada International
Utah Salt Lake City Office 5282 S. 320 West, Suite 0120 Salt Lake City, Utah 84107 Tel: 801-266-0773 Washington Bellevue Office 11911 NW. First Street Suite 310 Bellevue, Washington 98005 Tel: 206-455-3190 Canada
Toronto Regional Office 2375 Steeles Avenue West, Suite 203 Downsview, Ontario M3J 3A8, Canada Tel: 416-665-5903 TWX: 610-491-1283 Montreal Office 3675 Sources Blvd., Suite 203 Dollard des Ormeaux Quebec H9B 2K4 Canada Tel: 514-683-0883 Ottawa Office 148 Colonnade Road So., Unit 3 Nepean, Ontario K2E 7J5 Tel: 613-226-8270 TWX: 610-562-1953
France Fairchild Camera & Instrument SA 12 Place Des Etats-Unis F-92120 Montrouge France Tel: 1-657-1303 Telex 200614 Germany
Fairchild Gamera and Instrument GmBH Daimlerstrasse 15 8046 Garching Hochbruck Munich, Germany Tel: (089)320031 Telex: 52 4831 fair d Fairchild Gamera and Instrument GmBH Oeltzenstrasse 15 3000 Hannover W. Germany Tel: 0511 17844 Telex: 09 22922 Fairchild Gamera and Instrument GmBH Poststrasse 37 7251 Leonberg W. Germany Tel: 07152 41026 Telex: 07 245711 Fairchild Camera & Instrument (Deutschland) GmBH Frachtentrum Gebauede 458, Zimmer 2194 0-6000 Frankfurt Main 75
Japan
Nippon Fairchild K.K. 7th Floor Pola Shibuya Bldg. 15-21 Shibuya I-Choma Shibuya-Ku Tokyo 150, Japan Tel: 81-3-4008351 Telex: CORPHQ.TFCD Fairchild Japan Corporation Yotsubashi Chuo Bldg. 1-4-26, Shinmachi Nishi-Ku, Osaka 550, Japan Tel: 06-541-6138/9
Korea
Fairchild Semiconductor Ltd., Korea Branch 10th Floor, Life Building 61, Yoido-dong Youngdongpu-ku, Seoul 150 Korea
Mexico
Fairchild Mexicana SA Blvd. Adolofo Lopez Meteos No. 163 Mexico 19, D.F. Tel: 905-563-5411 Telex: 017-17-038
Germany Tel: 49-611-6905613 Telex: 0411829 Australia

Fairchild Australia Ply Ltd Suite 1, First Floor 366 White Horse Road Nunawading, Victoria 3131 Tel: 3-877-5444 Telex: 36496
Scandinavia Fairchild Semiconductor AB Svartengsgatan 6 S-11620 Stockholm Sweden Tel: 8-449255 Telex: 17759 Singapore
Fairchild Sales PTE, Ltd. 75177 Bukit Timah Road #03-02102 Boon Siew Building Singapore 1233 Republic of Singapore
Holland Fairchild Semiconductor Ruysdaelbaan 35 5613 Ox Eindhoven The Netherlands Tel: 00-31-40-446909 Telex: 00-1451024 Hong Kong Fairchild Semiconductor Products 12th Floor, Austin Tower, 22-26A Austin Avenue, Tsimshatsui Kowloon, Hong Kong Tel: 3-440233 Telex: 11780-73531
Fairchild Semiconductor (HK) Ltd. 5/F-61F, San Miguel Bldg. 9-11, Shing Wan Road Tai Wai, Shatin NT Hong Kong Tel: 852-0-6055311 Telex: 852050511
Austria and Eastern Europe Fairchild Electronics GmBH A-1120 Wien Meidinger Haupstrasse 46 Austria Tel: 43-222-858682 Telex: 115096 Brazil Fairchild Semiconductores Ltda. Caixa Postal 30407 Rua Alagoas, 663 01242 Sao Paulo, Brazil Tel: 66-9092 Telex: 011-23831 Gable: FAIRLEC
Fairchild Semiconductor Ltd. Rua Oswaldo Cruz, 505 Gaixa Postal 948 13100 Campinas SP Brazil Tel: 55-192-416655 Tel: 55-192-416434
SWitzerland
Fairchild Gamera & Instrument (Deutsch land) Gm BH Baumackerstr. 46 CH-8050 Zurich Schweiz Tel: 41-1-3114230 Telex: 58311
Taiwan Fairchild Semiconductor Ltd. Hsietsu Bldg., Room 502 47 Chung Shan North Road Sec. 3 Taipei, Taiwan Tel: 573205 thru 573207 United Kingdom Fairchild Semiconductor 230 High Street Potters Bar Hertfordshire EN6 5BU England Tel: 0707 51111 Telex: 262835
Italy
Fairchild Semiconducttori, S.PA Viale Corsica 7 20133 Milan, Italy Tel: 39-2-749-1271 TWX: CORPHQ.MILN Fairchild Semiconducttori S.P.A. Viale Corsica 7 20133 Milan, Italy Tel: 296001-5 Telex: 843-330522
England Fairchild Semiconductor 230 High Street Potters Bar Herts, England EN6 5BU
9-4
Franchised Distributors United States and Canada
Alabama
Avnet Electronics
Hall Mark Electronics 4900 Bradford Drive Huntsville, Alabama 35807 Tel: 205-837-8700 TWX: 810-726-2187
Hamilton/Avnet Electronics
20501 Plummer Street O1atsworth, California 91311 Tel: 818-883-0000

Bell Industries Electronic Distributor Division
Wyle Distribution Group 11151 Sun Center Drive Rancho Cordova, California 95670 Tel: 916-638-5282
Wyle Distribution Group
4940 Research Dr. N.w. Huntsville, Alabama 35805 Tel: 205-837-7210 TWX: 810-726-2162 Schweber Electronics 2227 Drake Avenue S.w. Huntsville, Alabama 35805 Tel: 205-882-2200
1161 N. Fair Oaks Avenue Sunnyvale, California 94086 Tel: 408-734-8570 TWX: 910-339-9378 Hamilton/Avnet Electronics 3170 Pullman Avenue Costa Mesa, California 92626 Tel: 714-641-1850 TWX: 910-595-2638 Hamilton Electro Sales 10912 West Washington Blvd. Culver City, California 90230 Tel: 213-558-2121 TWX: 910-340-6364
9525 Chesapeake San Diego, California 92123 Tel: 619-565-9171 TWX: 910-335-1590 Wyle Distribution Group 3000 Bowers Avenue Santa Clara, California 95051 Tel: 408-727-2500 TWX: 910-338-0541
Zeus Components, Inc. 1130 Hawk Circle Aanaheim, California 92807 Tel: 714-632-6880
Arizona
505 South Madison Drive Tempe, Arizona 85281 Tel: 602-231-5100 TWX: 910-950-0077 Kierulff Electronics 4134 East Wood Street Phoenix, Arizona 85040 Tel: 602-437-0750 TWX: 910-951-1550
Schweber Electronics
4103 North Gate Blvd. Sacramento, California 95834 Tel: 916-920-3150

Hamiiton/Avnet Electronics
Zeus Components, Inc. 3350 Scott Blvd., Bldg. 6402 Santa Clara, California 95051 Tel: 408-727-0714 TWX: 910-338-2121
Colorado Arrow Electronics
11049 N. 23rd Drive, Suite 100

Phoenix, Arizona 85029
4545 Viewridge Avenue San Diego, California 92123 Tel: 619-571-7527 TWX: 910-335-1216
Hamilton/Avnet Electronics 1175 Bordeaux Drive Sunnyvale, California 94086 Tel: 408-743-3355 TWX: 910-339-9332
1390 S. Potomac Street, Suite 136 Aurora, Colorado 80012 Tel: 303-696-1111 TWX: 910-331-0552 Bell Industries 8155 West 48th Avenue Wheatridge, Colorado 80033 Tel: 303-424-1985 TWX: 910-938-0393 Hamilton/Avnet Electronics 8765 E. Orchard Ad., Suite 708 Englewood, Colorado 80111 Tel: 303-740-1000 TWX: 910-935-0787 Wyle Distribution Group 451 East 124th Avenue Thornton, Colorado 80241 Tel: 303-457-9953 TWX: 910-936-0770
Connecticut Arrow Electronics
Tel: 602-997-4874 TWX: 910-950-1174 Wyle Distribution Group 17855 N. Black Canyon Hwy. Phoenix, Arizona 85023 Tel: 602-866-2888 TWX: 910-951-4282
California
Arrow Electron ies 19748 Dearborn Street Chatsworth, California 91311 Tel: 810-701-7500 TWX: 910-493-2086
Arrow Electronics
Schweber Electronics 17822 Gillette Avenue Irvine, California 92714 Tel: 714-863-0200 Schweber Electronics 90 East Tasman Drive San Jose, California 95134 Tel: 408-946-7171 TWX: 910-338-2043 Sertech Laboratories 3170 Pullman Dr. Costa Mesa, California 92626 Tel: 714-754-0666 Wyle Distribution Group 124 Maryland Street EI Segundo, California 90245 Tel: 213-322-8100 TWX: 910-348-7140 Wyle Distribution Group 17872 Cowan Avenue Irvine, California 92714 Tel: 714-863-9953 TWX: 910-595-1572 Wyle Distribution Group
Military Product Division
30941 San Clemente Street

Hayward, California 94544
Tel: 415-487-4300
Arrow Electronics
9511 Ridge Haven Court San Diego, California 92123 Tel: 619-565-4800 TWX: 910-335-1195
Arrow Electronics
12 Beaumont Road Wallingford, Connecticut 06492 Tel: 203-265-7741 TWX: 710-476-0162 Hamilton/Avnet Electronics Commerce Drive, Commerce Park Danbury, Connecticut 06810 Tel: 203-797-2800 TWX: 710-546-9974
Schweber Electronics Finance Drive
521 Weddell Avenue Sunnyvale, California 94086 Tel: 408-745-6600 TWX: 910-339-9371
Arrow Electronics
2961 Dow Avenue Tustin, California 92680 Tel: 714-838-5422

Avnet Electronics
Commerce Industrial Park Danbury, Connecticut 06810 Tel: 203-792-3500 TWX: 710-456-9405
Florida Arrow Electronics
350 McCormick Avenue Costa Mesa, California 92626 Tel: 714-754-6111 (Orange County) Tel: 213-558-2345 (Los Angeles) TWX: 910-595-1928
18910 Teller Avenue Irvine, California 92715 Tel: 714-851-9953
350 Fai rway Dr. Deerfield Beach, Florida 33441 Tel: 305-429-8200 TWX: 510-955-9456
"ThiS distributor carnes Fairchild die products only.
9-5
Arrow Electronics 1530 Bottlebrush Dr. N.E. Palm Bay, Florida 32905 Tel: 305-725-1480 TWX: 510-959-6337 "Chip Supply 7725 N. Orange Blossom Trail Orlando, Florida 32810 Tel: 305-298-7100 TWX: 810-850-0103 Hall Mark Electronics 1530 Roosevelt Blvd., Suite 303 Clearwater, Florida 33520 Tel: 813-576-8691 TWX: 810-863-0410 Hall Mark Electronics 3161 S.w. 15th Street Pompano Beach, Florida 33069 Tel: 305-971-9280 TWX: 510-956-3092 Hall Mark Electronics 7648 Southland Blvd., Suite 100 Orlando, Florida 32809 Tel: 305-855-4020 TWX: 810-850-0183 Hamilton/Avnet Electronics 6801 N.w. 15th Way Ft. Lauderdale, Florida 33309 Tel: 305-971-2900 TWX: 510-956-3097 Hamilton/Avnet ElectroniCS 3197 Tech Drive, North SI. Petersburg, Florida 33702 Tel: 813-576-3930 TWX: 810-863-0374 Hamilton/ Avnet Electronics 6947 University Blvd. Winter Park, Florida 32792 Tel: 305-626-3866 TWX: 610-653-0322 Schweber Electronics 215 North Lake Blvd. Altamonte Springs, Florida 32701 Tel: 305-331-7555 Schweber Electronics 2830 North 28th Terrace Hollywood, Florida 33020 Tel: 305-927-0511 TWX: 510-954-0304 Georgia Arrow Electronics 3155 Northwoods Pkwy. Suite A Norcross, Georgia 30071 Tel: 404-449-8252 TWX: 610-766-0439 Hall Mark Electronics 6410 Atlantic Blvd., Suite 115 Norcross, Georgia 30071 Tel: 404-447-8000 TWX: 810-766-4510
Hamilton/Avnet Electronics 5825-D Peachtree Corners East Norcross, Georgia 30092 Tel: 404-447-7500 TWX: 810-766-0432
Schweber Electronics 2979 Pacific Drive, Suite E Norcross, Georgia 30092 Tel: 404-449-9170 illinois Arrow Electronics 2000 Algonquin Road Schaumburg, Illinois 60195 Tel: 312-397-3340 TWX: 910-291-3544 Hall Mark Electronics 210 Mittel Wood Dale, Illinois 60191 Tel: 312-860-7780 TWX: 910-227-0060 Hamilton/Avnet Electronics 1130 Thorndale Avenue Bensenville, Illinois 60106 Tel: 312-860-7780 TWX: 910-227-0060 Kierulff Electronics 1140 W. Thorndale Itasca, Illinois 60143 Tel: 312-250-0500 TWX: 910-227-3166 Schweber Electronics 904 Cambridge Avenue Elk Grove Village, Illinois 60007 Tel: 312-364-3750 TWX: 910-222-3453
Hamilton/Avnet Electronics 9219 Quivira Road Overland Park, Kansas 66215 Tel: 913-888-8900 TWX: 910-743-0005
10300 W. 103rd St., Suite 103 Overland Park, Kansas 66214 Tel: 913-492-2921
Kentucky Hamilton-Avnet Electronics 1051-D Newtown Pike Lexington, Kentucky 40511 Maryland Arrow Electronics 8300 Guilford Road Suite H, Rivers Center Columbia, Maryland 21046 Tel: 301-995-0003 TWX: 710-236-9005
Hall Mark Electronics 10240 Old Columbia Road Columbia, Maryland 21046 Tel: 301-796-9300 TWX: 710-862-1942 Hamilton/Avnet Electronics 6822 Oak Hall Lane Columbia, Maryland 21045 Tel: 301-995-3500 TWX: 710-862-1861 Schweber Electronics 9330 Gaither Road Gaithersburg, Maryland 20877 Tel: 301-840-5900 TWX: 710-828-9749
Indiana Arrow Electron ies 2495 Directors Row, Suite H Indianapolis, Indiana 46241 Tel: 317-243-9353 TWX: 810-341-3119
Graham Electronics Supply, Inc. 133 S. Pennsylvania Street Indianapolis, Indiana 46204 Tel: 317-634-6202 TWX: 610-341-3461 Hamilton/Avnet Electronics 465 Gradle Drive Carmel, Indiana 46032 Tel: 317-844-9333 TWX: 610-260-3966 Pioneer Electronics 6408 Castle Place Drive Indianapolis, Indiana 46250 Tel: 317-649-7300 TWX: 810-260-1794
Massachusetts Arrow Electronics One Arrow Drive Woburn, MAssachusetts 01601 Tel: 617-933-6130 TWX: 710-392-6770
Gerber Electronics 126 Carnegie Row Norwood, Massachusetts 02062 Tel: 617-329-2400 TWX: 710-336-1987 Hamilton/Avnet Electronics 50 Tower Office Park Woburn, Massachusetts 01801 Tel: 617-273-7500 TWX: 710-393-0382 Schweber Electronics 25 Wiggins Avenue Bedford, Massachusetts 01730 Tel: 617-275-5100 TWX: 710-326-0268 "Sertech Laboratories 1 Peabody Street Salem, Massachusetts 01970 Tel: 617-745-2450 TWX: 710-347-0223 Zeus Components, Inc. 25 Adams Street Burlington, Massachusetts 01803 Tel: 617-273-0750 TWX: 710-332-0716
Iowa Arrow Electron ics 1930 SI. Andrews N.E. Cedar Rapids, Iowa 52402 Tel: 319-395-7230
Schweber Electronics 5270 N. Ppark Place N.E. Cedar Rapids, Iowa 52402 Tel: 319-373-1417
Kansas Hall Mark Electronics 10815 Lakeview Drive Lenexa, Kansas 66215 Tel: 913-888-4747 TWX: 910-749-6620
"ThiS distributor carnes Fairchild die products only.
9-6
Michigan Arrow Electronics
755 Phoenix Drive Ann Arbor, Michigan 48104 Tel: 313-971-8220 TWX: 810-223-6020 Arrow Electron ics 3510 Roger B. Chafee, S.E. Grand Rapids, Michigan 49508 Tel: 616-243-0912 Hamilton/Avnet Electronics 2215 29th Street S.E. Space A5 Grand Rapids, Michigan 49508 Tel: 616-243-8805 TWX: 810-273-6921 Hamilton/Avnet Electronics 32487 Schoolcraft Uvonia, Michigan 48150 Tel: 313-522-4700 TWX: 810-242-8775
Pioneer Electronics
502 Earth City Expressway Earth City, Missouri 63045 Tel: 314-739-0526
New Hampshire Arrow Electronics
Hamilton/Avnet Electronics 2524 Baylor Drive, S.E. Albuquerque, New Mexico 87106 Tel: 505-765-1500 TWX: 910-989-0614
New York
1 Perimeter Road Manchester, New Hampshire 03103 Tel: 603-668-6968 TWX: 710-220-1684
Arrow Electron ics 25 Hub Drive Milville, New York 11747 Tel: 515-694-6800 TWX: 510-224-6155 & 510-224-6126 Arrow Electron ics
20 Oser Avenue
444 E. Industrial Drive

Manchester, New Hampshire 03104
Tel: 603-624-9400
Hauppauge, New York 11787 Tel: 516-231-1000 TWX: 510-227-6623 Arrow Electron ics P.O. Box 370 7705 Maltlage Drive Liverpool, New York 13088 Tel: 315-652-1000 TWX: 710-545-0230 Arrow Electron ics 3375 Brighton-Henrietta Town Li ne Road Rochester, New York 14623 Tel: 716-275-0300 TWX: 510-253-4766
Bedford Farms Building 2 Ki Iton and South River Roads Manchester, New Hampshire 03102 Tel: 603-625-2250
New Jersey Arrow Electronics
13485 Stamford Livonia, Michigan 48150 Tel: 313-525-1800 TWX: 810-242-3271 Schweber Electronics 12060 Hubbard Avenue
Livonia, Michigan 48150
6000 Lincoln Drive East Marlton, New Jersey 08053 Tel: 609-596-8000 TWX: 710-897-0829
Arrow Electronics
Tel: 313-525-8100 TWX: 810-242-2983 Minnesota

Arrow Electronics
2 Industrial Road Fairfield, New Jersey 07006 Tel: 201-575-5300 Hall Mark Electronics 1000 Midlantic Dr. MI. Laurel, New Jersey 08054 Tel: 800-441-1508 TWX: 710-940-0660 Hall Mark Electronics 107 Fairfield Road Fairfield, New Jersey 07006 Tel: 201-575-4415 Hamilton/Avnet Electronics 10 Industrial Rroad Fai rfield, New Jersey 07006 Tel: 201-575-3390 TWX: 710-734-4388 Hamilton/Avnet Electronics #1 Keystone Avenue Cherry Hill, New Jersey 08003 Tel: 609-424-0100 TWX: 710-940-0262 Schweber Electronics 18 Madison Rroad Fairfield, New Jersey 07006 Tel: 201-227-7880 TWX: 710-734-4305
New Mexico Arrow Electron ics
933 Motor Parkway Hauppauge, New York 11788 Tel: 516-231-9800 TWX: 510-224-6166 Hamilton/Avnet Electronics 333 Metro Park Rochester, New York 14623 Tel: 716-475-9130 TWX: 510-253-5470 Hamilton/Avnet Electronics 103 Twin Oaks Drive Syracuse, New York 13207 Tel: 315-437-2642 TWX: 710-541-1560 Schweber Electronics
Jericho Turnpike
5230 West 73rd Street Edina, Minnesota 55435 Tel: 612-830-1800 TWX: 910-576-3125 Hall Mark Electronics 7838 12th Avenue South Bloomington, Minnesota 55420 Tel: 612-854-3323 Hamiiton/Avnet Electronics 10300 Bren Road East
Minnetonka, Minnesota 55343
Tel: 612-932-0600 TWX: 910-576-2720 Schweber Electronics 7424 West 78th SI. Edina, Minnesota 55435 Tel: 612-941-5280 TWX: 910-576-3167
Missouri Arrow Electronics
Westbury, L.I., New York 11590 Tel: 516-334-7474 TWX: 510-222-3660 Schweber Electronics 3 Town Line Circle Rochester, New York 14623 Tel: 716-424-2222
Summit Distributors, Inc.
2380 Sch uetz Road SI. Louis, Missouri 63146 Tel: 314-567-6888 TWX: 910-764-0882 Hall Mark Electronics 13750 Shoreline Drive Earth City, Missouri 63045 Tel: 314-291-5350 TWX: 910-762-0672
916 Main Street Buffalo, New York 14202 Tel: 716-884-3450 TWX: 710-522-1692
Zeus Components, Inc.
2460 Alamo Avenue S.E. Albuquerque, New Mexico 87106 Tel: 505-243-4566 TWX: 910-989-1679 Bell Industries 11728 Linn Avenue N.E. Albuquerque, New Mexico 87123 Tel: 505-292-2700 TWX: 910-989-0625
100 Midland Avenue Port Chester, New York 10573 Tel: 914-937-7400 TWX: 710-567-1248
North Carolina Arrow Electronics
13743 Shoreline Court, East Earth City, Missouri 63045 Tel: 314-344-1200 TWX: 910-762-0684
5240 Green Dai ry Road Raleigh, North Carolina 27604 Tel: 919-876-3132 TWX: 510-928-1856
9-7
Hall Mark Electronics 5237 North Blvd. Raleigh, North Carolina 27604 Tel: 919-872-0712 TWX: 510-928-1831 Hamilton/Avnet Electronics 3510 Spring Forest Road Raleigh, North Carolina 27604 Tel: 919-878-0817 TWX: 510-928-1836 Schweber Electronics 5285 North Blvd. Raleigh, North Carolina 27604 Tel: 919-876-0000
Oklahoma
Arrow Electronics 4719 S. Memorial Tulsa, Oklahoma 74145 Tel: 918-665-7700 Hall Mark Electronics 5460 S. 103rd East Avenue Tulsa, Oklahoma 74145 Tel: 918-665-3200 TWX: 910-845-2290 Schweber Electronics 4815 S. Sheridan Ad. Tulsa, Oklahoma 74145 Tel: 918-622-8000
Hall Mark Electronics 11333 Page Mill Road Dallas, Texas 75243 Tel: 214-343-5000 TWX: 910-867-4721 Hall Mark Electronics 10375 Brockwood Road Dallas, Texas 75238 Tel: 214-343-5000 TWX: 910-867-4721 Hall Mark Electronics 8000 Westglen Houston, Texas 77063 Tel: 713-781-6100 TWX: 910-881-2711 Hamilton/Avnet Electronics 1807 West Braker Lane Austin, Texas 78758 Tel: 512-837-8911 TWX: 910-874-1319 Hamilton/Avnet Electronics 8750 Westpark Houston, Texas 78758 Tel: 713-780-1771 TWX: 910-881-5523 Hamilton/Avnet Electronics 2111 W. Walnut Hill Lane Irving, Texas 75062 Tel: 214-659-4111 TWX: 910-860-5929 Schweber Electronics 6300 La Calma Drive Suite 240 Austin, Texas 78752 Tel: 512-458-8253 Schweber Electronics 4202 Beltway Drive Dallas, Texas 75234 Tel: 214-681-5010 TWX: 910-860-5493 Schweber Electronics 10625 Richmond, Suite 100 Houston, Texas 77042 Tel: 713-784-3600 TWX: 910-881-4836 Wyle Distribution Group 2120 West Braker Lane Suite F Austin, Texas 78758 Tel: 512-834-9957 Wyle Distribution Group 11001 S. Wilcrest, Suite 100 Houston, Texas 77099 Wyle Distribution Group 1810 N. Greenville Richardson, Texas 75081 Tel: 214-235-9953 Zeus Components, Inc. 14001 Goldmark, Suite 250 Dallas, Texas 75240 Tel: 214-783-7010
Ohio
Arrow Electronics 7620 Mc Ewen Road Centerville, Ohio 45459 Tel: 513-435-5563 TWX: 810-459-1611
Arrow Electronics 6238 Coch ran Road Solon, Ohio 44139 Tel: 216-248-3990 TWX: 810-427-9409
Oregon
Arrow Electronics 10260 S.W. Nimbus Suite M3 Tigard, Oregon 97223 Tel: 503-684-1690 TWX: 910-464-0007 Hamilton/Avnet Electronics 6024 S.w. Jean Road Building C, Suite 10 Lake Oswego, Oregon 97034 Tel: 503-635-8157 TWX: 910-455-8179 Wyle Distribution 5250 N.E. Elam Young Parkway Hillsboro, Oregon 97124 Tel: 503-640-6000
Hall Mark Electronics 5821 Harper road Solon, Ohio 44139 Tel: 218-349-4632 Hall Mark Electronics 400 East Wilson Bridge Ad. Suite S Worthington, Ohio 43085 Tel: 614-888-3313 Hamilton/Avnet Electronics 954 Senate Drive Dayton, Ohio 45459 Tel: 513-433-0610 TWX: 810-450-2531 Hamilton/Avnet Electronics 4588 Emery Industrial Parkway Warrensville Heights, Ohio 44128 Tel: 216-831-3500 TWX: 810-427-9452 Pioneer Electronics 4800 E. 131st Street Cleveland, Ohio 44105 Tel: 216-587-3600 TWX: 810-422-2211 Pioneer Electron ics 4433 Interpoint Blvd. Dayton, Ohio 45424 Tel: 513-236-9990 TWX: 810-459-1622 Schweber Electronics 23880 Commerce Park Rroad Beachwood, Ohio 44122 Tel: 216-464-2970 TWX: 810-427-9441 SChweber Electronics 7865 Paragon Road Dayton, Ohio 45459 Tel: 513-439-1800
Pennsylvania
Arrow Electronics 650 Seco Road Monroeville, Pennsylvania 15146 Tel: 412-856-7000 TWX: 710-797-3894 Pioneer Electronics 259 Kappa Drive Pittsburgh, Pennsylvania 15238 Tel: 412-782-2300 TWX: 710-795-3122 Schweber Electronics 231 Gibraltor Horsham, Pennsylvania 19044 Tel: 215-441-0600 TWX: 510-665-6540
'IlIxas
Arrow Electronics 2227 W. Braker Lane Austin, Texas 78758 Tel: 512-835-4180 TWX: 910-874-1348 Arrow Electron ics 3220 Commander Drive Carrollton, Texas 75006 Tel: 214-380-6464 TWX: 910-860-5377 Arrow Electronics 10899 Kinghurst, Suite 100 Houston, Texas 77099 Tel: 713-530-4700 TWX: 910-880-4439 Hall Mark Electronics 12211 Technology Blvd. Austin, Texas 78759 Tel: 512-258-8846 TWX: 910-874-2031
9-8
Utah Arrow Electronics 1515 West 2200 South Salt Lake City, Utah 84119 Tel: 801-972-0404 Bell Industries 3639 West 2150 South Salt Lake City, Utah 84119 Tel: 801-972-6969 TWX: 910-925-5686 Hamilton/Avnet Electronics 1588 West 2100 South Salt Lake City, Utah 84119 Tel: 801-972-2800 TWX: 910-925-4018 Wyle Distribution Group 1959 South 4130 West, Unit B Salt Lake City, Utah 84104 Tel: 801-974-9953 Virginia Arrow Electron ics 8002 Discovery Drive Richmond, Virginia 23285 Tel: 804-282-0413 TWX: 710-956-0169 Washington Arrow Electronics 14320 N.E. 21st Street Bellevue, Washington 98005 Tel: 206-643-4800 TWX: 910-443-3033 Hamilton/Avnet Electronics 14212 N.E. 21st Street Bellevue, Washington 98005 Tel: 206-453-5844 TWX: 910-443-2469 Radar Electronic Co., Inc. 168 Western Avenue W. Seatle, Washington 98119 Tel: 206-282-2511 TWX: 910-444-2052 Wyle Distribution Group 1750 132nd Avenue N.E. Bellevue, Washington 98005 Tel: 206-453-8300 TWX: 910-443-2526 Wisconsin Arrow Electronics 200 North Patrick Blvd. Brookfield, Wisconsin 53005 Tel: 414-794-0150 TWX: 910-262-1193 Hall Mark Electronics 16255 W. Lincoln Avenue New Berlin, Wisconsin 53151 Tel: 414-797-7844 Hamilton/Avnet Electronics 2975 South Moorland Road New Berlin, Wisconsin 53151 Tel: 414-784-4510 TWX: 910-262-1182 Schweber Electronics 150 Sunnyslope Road, Suite 120 Brookfield, Wisconsin 53005 Tel: 414-784-9020
Canada Future Electronics, Inc. 5809 Macleod Trail S. Unit 109 Calgary, Alberta T24 OJ9, Canada Tel: 403-259-6437 Future Electronics, Inc. 82 SI. Regis Crescent North Downsview, Ontario M3J lZ3, Canada Tel: 416-638c4771 TWX: 610-491-1470 Future Electronics, Inc. Baxter Center 1050 Baxter Road Ottawa, Ontario K2C 3P2, Canada Tel: 613-820-8313 Future Electronics, Inc. 237 Hymus Blvd. Pointe Claire (Montreal), Quebec H9R 5C7, Canada Tel: 514-694-7710 TWX: 610-421-3251 Future Electronics, Inc. 3070 Kingsway Vancouver, B.C. B5R 5J7 Tel: 604-438-5545 Hamilton/Avnet Canada Ltd. 6845 Rexwood Road, Units 3-4-5 Mississauga, Ontario l4V 1R2, Canada Tel: 416-677-7432 TWX: 610-492-8867 Hamilton/Avnet Canada Ltd. 190 Colonnade Road Nepean, Ontario K2E 7J5, Canada Tel: 613-226-1700 TWX: 0534-971 Hamilton/Avnet Canada Ltd. 2795 Halpern Road SI. Laurent, Quebec, H4S 1P8, Canada Tel: 514-335-1000 TWX: 610-421.-3731 Sernad Electronics Ltd. 9045 Cote De Liesse Suite 101 Dorval, Quebec H9P 2M9, Canada Tel: 514-636-4614 TWX: 610-422-3048 Sernad Electronics Ltd 864 Lady Ellen Place Ottawa, Ontario K1Z 5M2, Canada Tel: 613-722-6571 TWX: 610-562-1923 Sernad Electronics, Ltd 85 Spy Court Markham, Ontario L3R 4Z4, Canada Tel: 416-475-8500 TWX: 610-492-2510
9-9
NOTES

1985 Fairchild Discrete Data Book

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F=AIRCHILD

Discrete Data Book

1985 Fairchild Camera and Instrument Corporation

4-3 4-15 4-19 5-3

6-3 7-3 8-3 9-3

Section 7 Section 8 Section 9

Index and Device Crossreference

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1N4008 1N4009 1N4043 1N4086 1N4087

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2-18 2-18 2-18 2-18 2-4 2-4 2-3 2-3 2-3

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