Paper reading report

Sub-10 nm Carbon Nanotube

Transistor

Qing Shi

Outline
Background information
a) key problems in small transistors b) how to solve them? some new schemes: Si nanowire transistor FinFET ETSOI/UTBSOI CNT tansistor

Numerical calculation and results

a) old method b) new method

Outline
Background information
a) key problems in small transistors b) how to solve them? some new schemes: Si nanowire transistor FinFET ETSOI/UTBSOI CNT tansistor

Numerical calculation and results

a) old method b) new method

Background information
key problems in small transistors Good transistor: 1. High Ion/Ioff ratio high on state current and small off state current 2. Low inverse threshold slope(SS factor) voltage change when drain current decreases to 1/10 arising problems: Size of transistor leakage current high Ioff and low ratio =
( )

Background information
key problems in small transistors Paths far from the gate cannot be neglected (short channel)

This means: the drain current can no longer be controlled by gate voltage!

Outline
Background information
a) key problems in small transistors b) how to solve them? some new schemes: Si nanowire transistor FinFET ETSOI/UTBSOI CNT tansistor

Numerical calculation and results

a) old method b) new method

Background information
key problems in small transistors

Goal: kill the leakage current

Besides: satisfy other conditions to be a good transistor (high Ion and low threshold slope)

Outline
Background information
a) key problems in small transistors b) how to solve them? some new schemes: Si nanowire transistor FinFET ETSOI/UTBSOI CNT tansistor

Numerical calculation and results

a) old method b) new method

How to solve them silicon nanowire transistor

purple: metal gate (M) blue: dieletric layer (O) orange: si nanowire (S)

How to solve them FinFET

tri-gate and double gate:

dieletric layer between channel and gate.

How to solve them ETSOI/UTBSOI

Keypoint: thin layer as channel

How to solve them CNT transistor

Outline
Background information
a) key problems in small transistors b) how to solve them? some new schemes: Si nanowire transistor FinFET ETSOI/UTBSOI CNT tansistor

Numerical calculation and results

a) old method b) new method

Numerical calculation and results

What the auther do in this paper: 1. fabricate the 9nm carbon nanotube transistor 2. measure curve of Id-Vgs 3. SS is much smaller than theoretical projection got before SS=94mV/dec SS(proj)=170mV/dec 4. why past projection is wrong? 5. using a new method to do the simulation work 6. also compare result with other new transistors

Outline
Background information
a) key problems in small transistors b) how to solve them? some new schemes: Si nanowire transistor FinFET ETSOI/UTBSOI CNT tansistor

Numerical calculation and results

a) old method b) new method

Numerical calculation and results old method

Ref: Nanotechnology 2006, 17, 4699-4750 semiclassical self-consistent method use it to calculate sub-10 nm CNT answer: 170mV/dec as mentioned before not identical with experimental data.(94mV/dec) Key: channel becomes less significant than the contacts since the channel is extremely short. in old method, we treat the contact part as very small.

Outline
Background information
a) key problems in small transistors b) how to solve them? some new schemes: Si nanowire transistor FinFET ETSOI/UTBSOI CNT tansistor

Numerical calculation and results

a) old method b) new method

Numerical calculation and results new method

use the Greens function method so called bottom-gate structure My question: how he deal with the contact