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NChannel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and OverVoltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
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Ideal for CoilonPlug Applications GateEmitter ESD Protection Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load Integrated ESD Diode Protection New Design Increases Unclamped Inductive Switching (UIS) Energy Per Area Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices Low Saturation Voltage High Pulsed Current Capability Integrated GateEmitter Resistor (RGE) Emitter Ballasting for ShortCircuit Capability PbFree Package is Available
G RGE
MARKING DIAGRAM
4 Collector Unit VDC VDC VDC ADC AAC kV 8.0 ESD PD TJ, Tstg 800 115 0.77 55 to +175 V W W/C C GB18N40B A Y WW G 1 Gate 3 Emitter 2 Collector = Device Code = Assembly Location = Year = Work Week = PbFree Package GB 18N40BG AYWW
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device NGB18N40CLBT4 NGB18N40CLBT4G Package D2PAK D2PAK (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Shipping 800/Tape & Reel 800/Tape & Reel
NGB18N40CLBT4
UNCLAMPED COLLECTORTOEMITTER AVALANCHE CHARACTERISTICS (55 TJ 175C)
Characteristic Single Pulse CollectortoEmitter Avalanche Energy VCC = 50 V, VGE = 5.0 V, Pk IL = 21.1 A, L = 1.8 mH, Starting TJ = 25C VCC = 50 V, VGE = 5.0 V, Pk IL = 18.3 A, L = 1.8 mH, Starting TJ = 125C Reverse Avalanche Energy VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25C Symbol EAS 400 300 EAS(R) 2000 mJ Value Unit mJ
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, JunctiontoCase Thermal Resistance, JunctiontoAmbient D2PAK (Note 1) Symbol RqJC RqJA TL Value 1.3 50 275 Unit C/W C/W C
Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 5 seconds
ELECTRICAL CHARACTERISTICS
Characteristic OFF CHARACTERISTICS CollectorEmitter Clamp Voltage BVCES IC = 2.0 mA IC = 10 mA Zero Gate Voltage Collector Current ICES VCE = 350 V, VGE = 0 V Reverse CollectorEmitter Leakage Current IECS VCE = 24 V TJ = 40C to 150C TJ = 40C to 150C TJ = 25C TJ = 150C TJ = 40C TJ = 25C TJ = 150C TJ = 40C Reverse CollectorEmitter Clamp Voltage BVCES(R) IC = 75 mA TJ = 25C TJ = 150C TJ = 40C GateEmitter Clamp Voltage GateEmitter Leakage Current Gate Emitter Resistor ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGE(th) IC = 1.0 mA, VGE = VCE Threshold Temperature Coefficient (Negative) TJ = 25C TJ = 150C TJ = 40C 1.1 0.75 1.2 1.4 1.0 1.6 3.4 1.9 1.4 2.1* mV/C VDC BVGES IGES RGE IG = 5.0 mA VGE = 10 V TJ = 40C to 150C TJ = 40C to 150C TJ = 40C to 150C 380 390 27 30 25 11 384 10 395 405 2.0 10 1.0 0.7 12 0.1 33 36 32 13 640 16 420 430 20 40* 10 2.0 25* 1.0 37 40 35 15 100 0 26 VDC mADC
kW
Symbol
Test Conditions
Temperature
Min
Typ
Max
Unit
VDC
mADC
mA
VDC
*Maximum Value of Characteristic across Temperature Range. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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NGB18N40CLBT4
ELECTRICAL CHARACTERISTICS
Characteristic ON CHARACTERISTICS (Note 2) CollectortoEmitter OnVoltage VCE(on) IC = 6.0 A, VGE = 4.0 V TJ = 25C TJ = 150C TJ = 40C TJ = 25C IC = 8.0 A, VGE = 4.0 V TJ = 150C TJ = 40C TJ = 25C IC = 10 A, VGE = 4.0 V TJ = 150C TJ = 40C TJ = 25C IC = 15 A, VGE = 4.0 V TJ = 150C TJ = 40C TJ = 25C IC = 10 A, VGE = 4.5 V Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS TurnOff Delay Time (Resistive) Fall Time (Resistive) TurnOn Delay Time Rise Time td(off) tf td(on) tr VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, VCC = 300 V, IC = 6.5 A RG = 1.0 kW, RL = 46 W, VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W VCC = 10 V, IC = 6.5 A RG = 1.0 kW, RL = 1.5 W TJ = 25C TJ = 25C TJ = 25C TJ = 25C 4.0 9.0 0.7 4.5 10 15 4.0 7.0 mSec mSec CISS COSS CRSS VCC = 25 V, VGE = 0 V f = 1.0 MHz TJ = 40C to 150C 400 50 4.0 800 75 7.0 100 0 100 10 pF gfs VCE = 5.0 V, IC = 6.0 A TJ = 150C TJ = 40C TJ = 40C to 150C 1.0 0.9 1.1 1.3 1.2 1.4 1.4 1.5 1.4 1.8 2.0 1.7 1.3 1.3 1.4 8.0 1.4 1.3 1.45 1.6 1.55 1.6 1.8 1.8 1.8 2.2 2.4 2.1 1.8 1.75 1.8 14 1.6 1.6 1.7* 1.9* 1.8 1.9* 2.05 2.0 2.1* 2.5 2.6* 2.5 2.0* 2.0* 2.0* 25 Mhos VDC Symbol Test Conditions Temperature Min Typ Max Unit
*Maximum Value of Characteristic across Temperature Range. 1. When surface mounted to an FR4 board using the minimum recommended pad size. 2. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
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NGB18N40CLBT4
TYPICAL ELECTRICAL CHARACTERISTICS (unless otherwise noted)
60 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) VGE = 10 V 50 40 30 20 3V 10 0 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 2.5 V TJ = 25C 5V 4.5 V 4V 3.5 V 60 VGE = 10 V 50 4.5 V 40 TJ = 40C 30 3.5 V 20 3V 10 2.5 V 0 0 1 2 3 4 5 6 7 8 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS) 4V 5V
TJ = 25C
4.0 3.5 3.0 2.5 2.0 IC = 10 A 1.5 1.0 0.5 0.0 50 25 0 25 50 75 100 125 150 IC = 5 A VGE = 5 V IC = 25 A IC = 20 A IC = 15 A
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NGB18N40CLBT4
COLLECTOR TO EMITTER VOLTAGE (VOLTS) 3 2.5 2 1.5 IC = 5 A 1 0.5 0 3 4 5 6 7 8 9 10 GATE TO EMITTER VOLTAGE (VOLTS) IC = 15 A IC = 10 A TJ = 150C 10000 Ciss
C, CAPACITANCE (pF)
1000
100
Coss
10
Crss
1 0 0 20 40 60 80 100 120 140 160 180 200 VCE, COLLECTOR TO EMITTER VOLTAGE (VOLTS)
L = 3 mH L = 6 mH
25
50
75
100
125
150 175
TEMPERATURE (C)
TEMPERATURE (C)
tf
td(off) 4 2 0 50 30 10
25
50
75
100
125
150
175
10
30
50
70
90
TEMPERATURE (C)
TEMPERATURE (C)
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NGB18N40CLBT4
100 COLLECTOR CURRENT (AMPS) DC 10 100 ms 1 1 ms 10 ms 100 ms 0.1 COLLECTOR CURRENT (AMPS) 100
10 DC
100 ms 1 ms 10 ms
0.1
100 ms
Figure 13. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 255C)
Figure 14. Single Pulse Safe Operating Area (Mounted on an Infinite Heatsink at TA = 1255C)
100 COLLECTOR CURRENT (AMPS) COLLECTOR CURRENT (AMPS) t1 = 1 ms, D = 0.05 10 t1 = 2 ms, D = 0.10 t1 = 3 ms, D = 0.30 1
0.1
0.1
Figure 15. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 255C)
Figure 16. Pulse Train Safe Operating Area (Mounted on an Infinite Heatsink at TC = 1255C)
VBATT = 16 V
NGB18N40CLBT4
100 Duty Cycle = 0.5 R(t), TRANSIENT THERMAL RESISTANCE (C/Watt) 0.2 10 0.1 0.05 0.02 1 0.01
0.1
0.01 P(pk) Single Pulse t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) TA = P(pk) RqJA(t) RqJC @ R(t) for t 0.2 s
0.001
Figure 19. Transient Thermal Resistance (Nonnormalized JunctiontoAmbient mounted on minimum pad area)
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NGB18N40CLBT4
PACKAGE DIMENSIONS
D2PAK 3 CASE 418B04 ISSUE J
C E B
4 DIM A B C D E F G H J K L M N P R S V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B01 THRU 418B03 OBSOLETE, NEW STANDARD 418B04. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40
V W
A
1 2 3
T
SEATING PLANE
K G D H
3 PL M
W J
0.13 (0.005) P U L M
T B
SOLDERING FOOTPRINT*
8.38 0.33 F VIEW WW 3 10.66 0.42 1.016 0.04 5.08 0.20
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
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NGB18N40CLB/D