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2SK2642-01MR

N-CHANNEL SILICON POWER MOS-FET


Features
High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=35V Guarantee Avalanche-proof

FUJI POWER MOS-FET

TO-220F15

2.54

Applications
Switching regulators UPS DC-DC converters General purpose power amplifier
3. Source

Equivalent circuit schematic


Drain(D)

Maximum ratings and characteristicAbsolute maximum ratings


(Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 500 15 60 35 88.7 50 +150 -55 to +150 Unit V A A V mJ W C C
Gate(G) Source(S)

*1 L=0.72mH, Vcc=50V

Electrical characteristics (Tc =25C unless otherwise specified)


Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=500V VGS=0V VGS=35V VDS=0V ID=7.5A VGS=10V ID=7.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=300V ID=15A VGS=10V RGS=10 L=100H Tch=25C IF=2xID VGS=0V Tch=25C IF=ID VGS=0V -di/dt=100A/s Tch=25C 15 1.1 500 8.0 1.65 Tch=25C Tch=125C

Min.
500 3.5

Typ.

Max. Units
V V A mA nA S pF

4.5

4.0 4.5 10 500 0.2 1.0 10 100 0.44 0.55 9.0 1400 2100 250 380 110 170 30 50 110 170 90 140 55 90

ns A V ns C

Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient

Min.

Typ.

Max.
2.50 62.5

Units
C/W C/W

FUJI POWER MOSFET


Characteristics
Typical output characteristics ID=f(VDS):80s pulse test,Tc=25 C
40 VGS=20V 35 10V 30 8V 25 1.5 2.0
o

2SK2642-01MR

Drain-source on-state resistance RDS(on)=f(Tch):ID=7.5A,VGS=10V

RDS(on) [ ]

ID [A]

20 7V 15 6.5V

1.0

max.

typ. 10 0.5

6V 5 5.5V 0 0 5 10 15 20 25 30 5V 35 0.0 -50 0 50 100 150


o

VDS [V]

Tch [ C]

Typical transfer characteristic ID=f(VGS):80s pulse test,VDS=25V,Tch=25 C


o

Typical drain-source on-state resistance RDS(on)=f(ID):80 s pulse test, Tc=25 C


4.0 VGS= 5V 3.5 5.5V 6V 6.5V 7V
o

10

3.0

2.5 10
0

RDS(on) [ ]
0 1 2 3 4 5 6 7 8 9 10

ID [A]

2.0

1.5

10

-1

1.0

0.5

10

-2

0.0 0 5 10 15 20 25

VGS [ V ]

ID [ A ]

Typical forward transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C


o

Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS


6.0

5.0 10
1

max. 4.0 typ. min. 3.0

10

VGS(th) [V]

gfs [s]

2.0

1.0

10 10-1

-1

0.0 10
0

10

-50

50

100
o

150

ID [A]

Tch [ C ]

FUJI POWER MOSFET


Typical capacitances C=f(VDS):VGS=0V,f=1MHz
10n 400 Vcc=400V 350

2SK2642-01MR
Typical gate charge characteristic VGS=f(Qg):ID=15A,Tc=25 C
40
o

300 Ciss 1n 250 250V

0V 35 10 c= V Vc 250 V 0 40 30

25

VGS [V]

VDS [V]

C [F]

200

20

Coss 150 100p Crss 100 100V 10 15

50

10p -2 10

0 10
-1

10

10

10

20

40

60

80

100

120

140

160

0 180

VDS [V]

Qg [nC]

Forward characteristic of reverse of diode IF=f(VSD):80 s pules test,VGS=0V


70

Power Dissipation PD=f(Tc)

60 10
1

Tch=25 C typ.

50

IF [A]

PD [W]

10

40

30

10

-1

20

10

10

-2

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

50

100

150

VSD [V]

Tc [ C ]

Safe operating area ID=f(VDS):D=0.01,Tc=25 C Transient thermal impedande Zthch=f(t) parameter:D=t/T


10
1

10

10 0.5 10
0

t=0.01s DC 1s 10s 100s

Zthch-c [K/W]

ID [A]

0.2 0.1 0.05 10


-1

10

1ms

0.02 10 0.01 0
-1

10ms 100ms

10 -5 10

-2

10

-4

10

-3

10

-2

10

-1

10

10

10

-2

10

10

10

10

t [s]

VDS [V]

FUJI POWER MOSFET


Avalanche energy derating Eas=f(starting Tch):Vcc=50V,IAV=15A
100

2SK2642-01MR

80

60

Eas [mJ]

40

20

50
o

100

150

Starting Tch [ C ]

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