DATA SHEET SHEET DATA

SILICON TRANSISTOR

2SC2954
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DESCRIPTION
The 2SC2954 is an NPN epitaxial silicon transistor disigned for low noise wide band amplifier and buffer amplifier of OSC, for VHF and CATV bnad.
PACKAGE DIMENSIONS
(Unit: mm)

FEATURES
Low Noise and High Gain. NF: 2.3 dB, 2.4 dB
0.8 MIN.

4.50.1 1.60.2 1.50.1

S21e
: 20 dB, 12.5 dB

Large PT in Small Package. PT: 2 W with 16 cm  0.7 mm Ceramic Substrate.
2

E
0.42 0.06

0.420.06 1.5 0.47 0.06 3.0 0.41 +0.05

0.03

ABSOLUTE MAXIMUM RATINGS (TA = 25
C)

Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Termal Resistance Junction Temperature Storage Temperature VCBO VCEO VEBO IC PT * Rth(j-a)* 35 18 3.0 150 2.0 62.5 V V V mA W

Term, Connection E : Emitter C : Collector (Fin) B : Base (SOT-89)

C/W Tj 150 C Tstg 65 to +150 C * With 16 cm2  0.7 mm

Ceramic Substrate

Document No. P10405EJ3V0DS00 (3rd edition) (Previous No. TC-1458A) Date Published March 1997 N Printed in Japan

4.00.25

2.50.1

f = 200 MHz, 500 MHz

1994

2SC2954
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC Collector Cutoff Current DC Current Gain Gain Bandwidth Product Feedback Capacitance SYMBOL ICBO hFE fT Cre TEST CONDITIONS VCB = 10 V, IE = 0 VCE = 10 V, IC = 50 mA *1 VCE = 10 V, IC = 50 mA VCB = 10 V, Emitter Grounded, f = 1.0 MHz VCE = 10 V, IC = 50 mA, f = 500 MHz RG = 50  VCE = 10 V, IC = 30 mA, f = 500 MHz RG = 50  10 30 3.0 100 4.0 1.1 1.8 MIN. TYP. MAX. 100 200 UNIT nA

GHz pF

Insertion Power Gain

S21e2
NF

12.5

dB

Noise Figure

2.4

4.0

dB

*1 Pulse Measurement PW
350
s, duty cycle

2 %/Pulsed

TYPICAL CHARACTERISTICS (TA = 25
C)

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE VCE = 10 V

200

PT-Total Power Dissipation-W

Ceramic Substrate 16 cm2 0.7 mm Rth(j-a) 62.5 C/W 1.0

IC-Collector Current-mA

2.0

100

Free Air Rth(j-a) 312.5 C/W 0 0 50 100 Ta-Ambient Temperature-C 150 0.5 VBE-Base to Emitter Voltage-V 1.0

200

COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE

DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 10 V

IC-Collector Current-mA

hFE-DC Current Gain

10

2 mA 100 1.5 mA 1 mA IB = 500 A

200 100 70 50 30

0 2 4 6 8 VCE-Collector to Emitter Voltage-V

20 10

10 100 200 IC-Collector Current-mA

2SC2954

10 Cre-Feed-back Capacitance-pF Cob-Output Capacitance-pF 5.0 3.0 2.0 1.0

FEED-BACK AND OUTPUT CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE f = 1.0 MHz fT-Gain Bandwidth Product-MHz

10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1.0

GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 10 V

Cob (Emitter Open)

Cve (Emitter Graund) 0.5 0.3 0.2 0.1

0.5 1.0 5.0 10 30 VCB-Collector to Base Voltage-V

5.0 10 50 100 IC-Collector Current-mA

30 25 |S21e|2-Insertion Gain-dB 20

INSERTION GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 100 MHz

30

INSERTION GAIN vs. FREQYENCY VCE = 10 V IC = 50 mA

25 f = 200 MHz

|S21e|2-Insertion Gain-dB 100

20

15 f = 500 MHz 10 5 0 f = 1 GHz

15

10

10 20 30 50 IC-Collector Current-mA

0 0.1

0.2 0.3 0.5 f-Frequency-GHz

0.7

1.0

2SC2954

18 15
Ga-Associated Gain-dB NF-Noise Figure-dB

6 5 4 3 2 1 0

NOISE FIGURE, ASSOCIATED GAIN vs. COLLECTOR CURRENT VCE = 10 V f = 500 MHz RG = 50 Ga

12 9 6 3 0

NF

5 7 10 20 IC-Collector Current-mA

30

50

70 100

NOISE FIGURE,vs. FREQUENCY 6 VCE = 10 V IC = 30 mA RG = 50 IM2 IM3 (dB) 80

2SC2945 IM2, IM3 vs. IC at VCE = 10 V V0 = 110 dBV/75 Rg = Re = 75

IM2 f = 90 + 100 MHz IM3 f = 2 200 190 MHz

NF-Noise Figure-dB

70

60

IM3

50 IM2 40

1 30 0.2 0.3 0.5 f-Frequency-GHz 1.0 20 20 30 40 IC (mA) 50 60 70

0 0.1

2SC2954

S11e, S22e-FREQUENCY
0.10 0.40 110
0.7

0.6

0.
GTHS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.0 GENE 0.01 7 0.48 2 RD L 3 RA OAD 0.4 0.0 A N O I C T O EFFCIEN 0.4 0.0TOR 3 HS TOWLE OF REFLEC T IN D 6 7 .0 4 0 G T 4 EGR N G 0. EES EN 160 A 0.4 L 0 4 E .0 6 0.0 AV 0 5 W 15 0.4 5 0.4 5 50 0 1 .0 5 0 0. 0 44 P . OS 0.1 14 0.4 6 0 06 40 ENT ITIV ON 0 ER 4 MP 0. 1 EA CO

0.

07 43 0. 0 13

1.6

8 0.0 2 0.4 20 1

0.9

1.0

0.8

1.2

9 0.0 1 0.4

0.11 0.39 100

0.12 0.38

0.13 0.37

90

0.14 0.36 80

0.15 0.35

70
1.4

0.1 6 0.3 4

00 6
1.8

0.1 0.3 7 3

0.2

0.
2.0

50

0. 18 32

19 0. 31 0.

T EN

0.4

0.2

40

0.3

( Z+JXTANCE CO ) MPO

WAVELE N

0 1.

0.2

0.3

0.4

0.5

0.6

0.7 0.8

0.9 1.0

1.2

1.4

1.6

1.8 2.0

3.0

4.0

5.0

10

20

0.1

0.6

1. 0

0.2

0.

S22e
5.0
4.0

E NC TA X AC J RE ZO

0.3

0.

E IV AT

0.

2.0

0.6

1.8

1.6

0.7

0.8

1.4

0.9

1.2

1.0

CONDITION VCE = 10 V IC = 50 mA f = 0.1 to 1.0 GHz (STEP. 100 MHz)

S21e-FREQUENCY 90 120 0.1 GHz 0.2 0.3 0.5 0.7 1.0 5.0 10 15 20 60 120

S12e-FREQUENCY 90 60 0.1 GHz 0.7 0.5 0.3 0.2 0.1 0 180 0.05 0.1 0.15 0.20 0 30

150

30

150

180

150

30

150

120

60 90

120

90

CONDITION VCE = 10 V IC = 50 mA

CONDITION VCE = 10 V IC = 50 mA

10

0.1 GHz

0.4

20

1.0 GHz 0.1 GHz

50

S11e

REACTANCE COMPONENT R 0.2 ZO

3.

0.

32 18 0.

3 0.3 7

0.1

4 0.3 6 0.1

0.35 0.15 70

0.36 0.14 80

1.0

0.8

0.6

0.37 0.13

0.4

0.4

1 GHz

0.8

0.6

0.2

0.2

90

0.38 0.39 0.12 0.11 100

0.40 0.10

11

0.4 1 0.0 9

1 2

0.4 0.0 2 8 0

NE G

0. 4 0. 3 07 30

0.

0.6

3.

1 0.2 9 0.2 30

0.8

0.3

4.0
1. 0
6.0

0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20

0.2

10

0.1

20

50

0.25 0.25

0.26 0.24

10

0.27 0.23

0.2 8 0.2 2 20

0. 2 9 0.2 1 0.3 3 0.2 0 0 0

4 0

0. 0. 31 19

30

60

2SC2954
[MEMO]

2SC2954
[MEMO]

2SC2954

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M4 96. 5

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