Advance CMOS Cell Design

by Etienne Sicard and Sonia Delmas Bendhia

Prepared by: Mac Chester D. Saba BSEcE 5-1

1. How many transistors does Itanium 2 processor have? A. 100 million B. 200 million C. 300 million D. 400 million

2. When does the Intel introduced the complete industrial 90nm process? A. 2000 B. 2003 C. 2006 D. 2009

3. What boosts the performances of nchannel and p-channel transistor? A. Silicon oxide B. Silicon dioxide C. Strained silicon D. all of the above

4. What speeds up the hole mobility of pchannel MOS devices? A. Compressive strain B. Compressive holes C. Effective length D. none of the above

5. It is need for various purposes including on-chip power supply decoupling, analog filtering for wireless applications and highquality resonators for radio-frequency circuits. A. High-capacitance passive devices B. Metal-Insulator-Metal C. MIM D. all of the above

6. These are vital components in modern ICs. A. Conductor memories B. Semiconductor memories C. Volatile memories D. all of the above

7. It represent roughly 30% of the global IC market. A. Stand-alone memories B. RAM C. ROM D. none of the above

8. Two main classes of memories. A. Volatile and RAM B. ROM and RAM C.Volatile and non-volatile memories D. PROM and EPROM

9. Simplest type of non-volatile memory. A. ROM B. RAM C. PROM D. EPROM

10. It has only one transistor, in order to improve the memory matrix density by almost one order of magnitude. A. Dynamic ROM B. Dynamic RAM C. Dynamic PROM D. Dynamic EPROM

11. What is the basic element of an Electrically Erasable PROM (EEPROM) memory. A. Floating-polysilicon layer B. Floating-source transistor C. Floating-drain transistor D. Floating-gate transistor

12. It can be programmed electrically bitby-bit but can only be erased by blocks. A. RAM B. ROM C. Flash arrays D. RAM arrays

13. What type of memory are the most advanced of the flash memory challengers? A. Ferroelectric RAM B. Ferroelectric ROM C. Electric RAM D. Electric ROM

14. It is an updated version of the very popular simple as possible computer architecture. A. Simple Microprocessor B. Super Simple Microprocessor C.Very Simple Microprocessor D. Ultra Simple Microprocessor

15. It monitors the address of the active instruction. A. Accumulator B. Input Register C. Arithmetic Unit D. Program Counter

16. It gives the opportunity to transfer data from the outside world to the microprocessor. A. Accumulator B. Input Register C. Arithmetic Unit D. Program Counter

17. How long each instruction of the VSM? A. 8 bits long B. 16 bits long C. 32 bits long D. 64 bits long

18. The structure of each sub-block of the microprocessor is presented in detail here. A. Internal Bus B. Basic Block Design C. Program Memory D. none of the above

19. It contains versatile functions, configurable interconnects and an I/O interface to adapt to the user specification. A. FPDA B. FPSA C. FPGA D. none of the above

20. The most versatile circuit to create a configurable logic function. A. Look-up table B. Multiplexors C. Memory Points D. Fuse and Antifuse

21. These are essential components of the configurable logic blocks. A. Look-up table B. Multiplexors C. Memory Points D. Fuse and Antifuse

22. It consists of a LUT, a D-register and some multiplexors. A. Programmable Logic Block B. Programmable Interconnect Point C. Switching Matrix D. Array of Blocks

23. This may be found in the advanced set of switches symbols. A. Programmable Logic Block B. Programmable Interconnect Point C. Switching Matrix D. Array of Blocks

24. What is a sophisticated programmable interconnect point, which enables a wide range of routing combinations within a single interconnect crossing? A. Programmable Logic Block B. Programmable Interconnect Point C. Switching Matrix D. Array of Blocks

25. What frequency range does the modern radio-frequency equipments operates? A. VHF and MF B. SHF and VHF C. UHF and SHF D. MF and UHF

26. It is commonly used for filtering, amplifying, or for creating resonant circuits used in radio-frequency applications. A. Capacitor B. Resistor C. Transistor D. Inductor

27. What is the range of the typical value of on-chip inductance? A. 0.1mH to 100mH B. 0.1uH to 100uH C. 0.1nH to 100nH D. 0.1uH to 100nH

28. It permits high voltage gain, and high selectivity in the frequency domain. A. High quality factor Q B. Gain C. Attenuation D. Noise

29. What is the usual value for Q? A. between 3 and 13 B. between 13 and 23 C. between 3 and 23 D. between 3 and 30

It was a role to create aperiodic logic or analog signal with a stable and predictable frequency. A. Power Amplifier B. Oscillator C. Inductor D. Phase Detector

31. What is the simples phase detector? A. XOR gate B. XNOR gate C. NAND gate D. Inverter

32. It may be used to transform a frequency into a voltage. A. Voltage Controlled Oscillator B. LC Oscillator C. Phase Oscillator D. Phase Lock Loop

33. Its configuration consists of a network of resistors alternating between R and 2R. A. Resistance Ladder B. R-2R Ladder C. Switch Capacitors D. Hold Circuits

34. Its configuration consists of arrays of capacitors that are connected to switches, in parallel. A. Resistance Ladder B. R-2R Ladder C. Switch Capacitors D. Hold Circuits

35. What is the most common low-speed analog-to-digital converter? A. Pipeline ADC converter B. Iterative converter C. Flash converter D. all of the above

36. It consists of two or more stages connected in serial, each containing a low resolution ADC and DAC converter. A. Pipeline ADC converter B. Iterative converter C. Flash converter D. all of the above

37. What is one of the simplest temperature sensing elements? A. pn diode B. np diode C. pnp D. npn

38. What is the interface between IC die and the package? A. Bonding Wire B. Bonding Pad C. Pad Ring D. Supply Rails

39. It consists of several pads on each of the four sides of the IC, to interface with the outside world. A. Bonding Wire B. Bonding Pad C. Pad Ring D. Supply Rails

40. A type of resistor that is completely embedded in oxide, and can therefore handle very high voltage stress. A. Polysilicon resistor B. Nwell resistor C. Potentiometer D. all of the above

41. The invert mode of a normal diode. A. pn diode B. np diode C. zener diode D. all of the above

42. It is a key device for the development of 10 to 20 GHz processors. A. MHz transistor B. GHz transistor C.THz transistor D. kHz transistor

43. It appears when an n-channel MOS transistor passes a strong current between the drain and the source. A. Memory effect B. Kink effect C. Both a and b D. none of the above