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June 2004
FDD6688/FDU6688
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
84 A, 30 V. RDS(ON) = 5 m @ VGS = 10 V RDS(ON) = 6 m @ VGS = 4.5 V
Applications
DC/DC converter Motor Drives
D G S
I-PAK (TO-251AA) G D S
G
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation for Single Operation
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Ratings
30 20 84 100 83 3.8 1.6 55 to +175
Units
V A W
TJ, TSTG
Thermal Characteristics
RJC RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
(Note 1) (Note 1a) (Note 1b)
1.8 40 96
C/W
FDD6688/FDU6688
Electrical Characteristics
Symbol
WDSS IAR
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Test Conditions
Single Pulse, VDD = 15 V, ID = 21A
Off Characteristics
BVDSS BVDSS TJ IDSS IGSS DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage
(Note 2)
VGS = 0 V,
ID = 250 A
30 24 1 100
V mV/C A nA
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance OnState Drain Current Forward Transconductance
VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 18 A VGS = 4.5 V, ID = 16.5 A VGS = 10 V, ID = 18 A, TJ=125C VGS = 10 V, VDS = 5 V, VDS = 5 V ID = 18 A
1.8 5 4 5 6
V mV/C
5 6 10
ID(on) gFS
50 88
A S
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
(Note 2)
V GS = 0 V,
pF pF pF
VGS = 15 mV,
f = 1.0 MHz
1.2
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge
VDD = 15 V, VGS = 10 V,
ID = 1 A, RGEN = 6
15 13 62 36
27 23 99 58 56
ns ns ns ns nC nC nC
ID = 18 A,
37 10 14
FDD6688/FDU6688
Parameter
DrainSource Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge
Test Conditions
VGS = 0 V, IS = 3.2 A
Notes:8 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. Maximum current is calculated as:
PD R DS(ON)
where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6688/FDU6688
Typical Characteristics
100
80
3.5V
60
40
3.0V
20
1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100
o
ID = 9 A
0.01
0.008
TA = 125oC
0.006
TA = 25oC
0.004
0.002
125
150
175
10
VDS = 5V
ID, DRAIN CURRENT (A) 60
VGS = 0V
10 1
TA = 125oC
25oC
40
0.1
-55oC
TA = 125oC
20
25oC -55oC
0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.2
1.4
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature
FDD6688/FDU6688
Typical Characteristics
5000 ID =18A VDS = 10V 20V 15V 4000 CAPACITANCE (pF) CISS 3000 f = 1MHz VGS = 0 V
100
RDS(ON) LIMIT
100s 1ms 10ms 100ms 1s 10s VGS = 10V SINGLE PULSE RJA = 96oC/W TC = 25oC DC
80
10
60
40
0.1
20
0.01 0.01
0.1
10
100
0 0.01
0.1
10
100
1000
1
D = 0.5 0.2
0.1
0.1 0.05
0.01
0.02 0.01
0.001
0.0001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
10
100
1000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I11