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FLM0910-4F

X, Ku-Band Internally Matched FET

FEATURES

• High Output Power: P 1dB = 36.0dBm (Typ.)

• High Gain: G 1dB = 7.5dB (Typ.)

• High PAE: η add = 29% (Typ.)

• Low IM 3 = -46dBc@Po = 25.5dBm

• Broad Band: 9.5 ~ 10.5GHz

• Impedance Matched Zin/Zout = 50

DESCRIPTION

The FLM0910-4F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system.

Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance.

assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25 ° C)

ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)

Item

 

Symbol

Condition

 

Rating

 

Unit

 

Drain-Source Voltage

 

V

DS

   

15

V

Gate-Source Voltage

 

V

GS

   

-5

V

Total Power Dissipation

 

P

T

 

T

c = 25°C

 

25.0

W

Storage Temperature

 

T

stg

 

-65 to +175

°C

Channel Temperature

 

T

ch

   

175

°C

Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:

 

1. The drain-source operating voltage (V DS ) should not exceed 10 volts.

2. The forward and reverse gate currents should not exceed 16.0 and -2.2 mA respectively with gate resistance of 100.

 

ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)

 

Item

 

Symbol

 

Test Conditions

 

Limit

Unit

Min.

Typ.

Max.

       

Saturated Drain Current

 

I

DSS

V

DS = 5V, V GS = 0V

-

1700

2600

mA

Transconductance

 

g

m

 

V

DS = 5V, I DS = 1100mA

-

1700

-

mS

Pinch-off Voltage

 

V

p

V

DS = 5V, I DS = 85mA

-0.5

-1.5

-3.0

V

Gate Source Breakdown Voltage

 

V

GSO

I

GS = -85µA

-5.0

-

-

V

Output Power at 1dB G.C.P.

 

P

1dB

 

35.5

36.0

-

dBm

Power Gain at 1dB G.C.P.

 

G

1dB

V

DS =10V,

6.5

7.5

-

dB

Drain Current

 

I

dsr

 

I

DS = 0.65 I DSS (Typ.),

-

1100

1300

mA

f

= 9.5 ~10.5 GHz,

Power-added Efficiency

 

η

add

Z

S =Z L = 50 ohm

-

29

-

%

Gain Flatness

 

G

 

-

-

±0.6

dB

3rd Order Intermodulation Distortion

 

IM 3

 

= 10.5 GHz, f = 10 MHz 2-Tone Test

f

-44

-46

-

dBc

 

P

out = 25.5dBm S.C.L.

Thermal Resistance

 

R

th

 

Channel to Case

-

5.0

6.0

°C/W

Channel Temperature Rise

 

T ch

10V x I dsr x R th

-

-

80

°C

CASE STYLE: IA

G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level

Edition 1.3

August 2004

1

A S E S T Y L E : I A G.C.P.: Gain Compression Point, S.C.L.:

FLM0910-4F

X, Ku-Band Internally Matched FET

POWER DERATING CURVE

30 24 18 12 6 0 50 100 150 200 Total Power Dissipation (W)
30
24
18
12
6
0
50
100
150
200
Total Power Dissipation (W)

Case Temperature (°C)

OUTPUT POWER vs. FREQUENCY

V DS =10V 37 P 1dB Pin=29dBm 36 27dBm 35 26dBm 34 25dBm 33 32
V
DS =10V
37
P
1dB
Pin=29dBm
36
27dBm
35
26dBm
34
25dBm
33
32
23dBm
31
Output Power (dBm)

9.5 10.0

Frequency (GHz)

10.5

OUTPUT POWER & IM 3 vs. INPUT POWER

V DS =10V f 1 = 10.5 GHz 32 f 2 = 10.51 GHz 2-tone
V DS =10V
f 1 = 10.5 GHz
32
f 2 = 10.51 GHz
2-tone test
30
P
out
28
-15
26
-25
24
-35
IM 3
22
-45
20
-55
16
18
20
22
24
Output Power (S.C.L.) (dBm)
IM 3 (dBc)

Input Power (S.C.L.) (dBm) S.C.L.: Single Carrier Level

OUTPUT POWER vs. INPUT POWER

V DS =10V 36 f = 10.0 GHz 34 P out 32 40 30 30
V
DS =10V
36
f
= 10.0 GHz
34
P
out
32
40
30
30
η
add
28
20
26
10
19
21
23
25
27
29
Output Power (dBm)
η
add (%)

Input Power (dBm)

out 32 40 30 30 η add 28 20 26 10 19 21 23 25 27

2

FLM0910-4F

X, Ku-Band Internally Matched FET

S +j50 11 +90° S 22 0.2 +j100 +j25 10.3 0.1 10.5 +j250 9.3GHz 10.1
S
+j50
11
+90°
S
22
0.2
+j100
+j25
10.3
0.1
10.5
+j250
9.3GHz
10.1
+j10
9.5
9.5
10.7
9.3GHz
9.7
9.9
10.7
10.5
9.9
9.7
0
10
50Ω
100
250
180°
4
3
2
1
10.3
9.7
SCALE FOR |S 21 |
10.1
9.9
10.7
10.1
10.3
10.5
-j10
-j250
10.1
9.9
9.5
10.7
9.7
10.3
9.3GHz
9.3GHz
10.5
9.5
-j25
-j100
-j50
-90°
SCALE FOR |S 12 |

FREQUENCY

S11

S-PARAMETERS V DS = 10V, I DS = 1100mA

S21

S12

S22

S 21

S 12

0°

(MHZ)

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

9300

.585

-106.3

2.447

48.4

.053

113.7

.686

-65.4

9400

.559

-115.3

2.515

40.1

.053

103.2

.677

-70.8

9500

.530

-125.8

2.585

31.9

.051

90.5

.666

-76.4

9600

.467

-150.3

2.763

13.9

.049

62.4

.625

-89.7

9700

.435

-165.5

2.841

4.0

.049

47.4

.596

-97.3

9800

.410

177.6

2.906

-6.5

.046

28.0

.557

-106.1

9900

.385

159.3

2.934

-17.0

.049

13.1

.515

-115.8

10000

.378

140.6

2.946

-27.6

.051

-7.5

.463

-126.6

10100

.381

121.2

2.956

-38.1

.052

-27.6

.409

-139.1

10200

.402

102.4

2.964

-48.9

.053

-45.8

.356

-153.1

10300

.427

85.0

2.943

-59.8

.057

-61.5

.313

-169.5

10400

.456

69.1

2.898

-71.0

.059

-79.3

.277

171.6

10500

.499

46.8

2.742

-89.2

.064

-104.5

.246

138.5

10600

.532

31.7

2.590

-103.3

.065

-124.2

.243

111.8

10700

.553

21.2

2.448

-114.0

.067

-137.7

.251

91.3

3

-103.3 .065 -124.2 .243 111.8 10700 .553 21.2 2.448 -114.0 .067 -137.7 .251 91.3 3

FLM0910-4F

X, Ku-Band Internally Matched FET

Case Style "IA" Metal-Ceramic Hermetic Package

1 2-R 1.25±0.15 0.1 (0.049) (0.004) 4 2 3 1.8±0.15 0.5 (0.071) (0.020) 3.2 Max.
1
2-R 1.25±0.15
0.1
(0.049)
(0.004)
4
2
3
1.8±0.15
0.5
(0.071)
(0.020)
3.2 Max.
(0.126)
8.1
(0.319)
1. Gate
2. Source (Flange)
3. Drain
4. Source (Flange)
13.0±0.15
(0.512)
Unit: mm(inches)
16.5±0.15
(0.650)
0.2 Max.
(0.008)
1.15
1.5 Min.
9.7±0.15
1.5 Min.
(0.045)
(0.059)
(0.382)
(0.059)

For further information please contact:

Eudyna Devices USA Inc.

2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111

www.us.eudyna.com

Eudyna Devices Europe Ltd.

Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888

Eudyna Devices Asia Pte Ltd. Hong Kong Branch

Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921

Eudyna Devices Inc.

Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL: +81-45-853-8156 FAX: +81-45-853-8170

CAUTION

Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:

• Do not put this product into the mouth.

• Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.

• Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.

Eudyna Devices Inc. reserves the right to change products and specifications without notice. The information does not convey any license under rights of Eudyna Devices Inc. or others.

© 2004 Eudyna Devices USA Inc. Printed in U.S.A.

not convey any license under rights of Eudyna Devices Inc. or others. © 2004 Eudyna Devices

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