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ReverseconductingIGBTwithmonolithicbodydiode
IHW20N120R3
Datasheet
IndustrialPowerControl
IHW20N120R3
InductionHeatingSeries
ReverseconductingIGBTwithmonolithicbodydiode
Features:
Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
TRENCHSTOPTMtechnologyapplicationsoffers:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-lowVCEsat
-easyparallelswitchingcapabilityduetopositive
temperaturecoefficientinVCEsat
LowEMI
QualifiedaccordingtoJESD-022fortargetapplications
Pb-freeleadplating;RoHScompliant
CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
G
Inductivecooking
KeyPerformanceandPackageParameters
Type
IHW20N120R3
VCE
IC
VCEsat,Tvj=25C
Tvjmax
Marking
Package
1200V
20A
1.48V
175C
H20R1203
PG-TO247-3
Rev.2.5,2013-02-12
IHW20N120R3
InductionHeatingSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Rev.2.5,2013-02-12
IHW20N120R3
InductionHeatingSeries
Maximumratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
DCcollectorcurrent,limitedbyTvjmax
TC=25C
TC=100C
IC
40.0
20.0
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
60.0
TurnoffsafeoperatingareaVCE1200V,Tvj175C
60.0
Diodeforwardcurrent,limitedbyTvjmax
TC=25C
TC=100C
IF
40.0
20.0
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
60.0
Gate-emitter voltage
TransientGate-emittervoltage(tp10s,D<0.010)
VGE
20
25
PowerdissipationTC=25C
PowerdissipationTC=100C
Ptot
310.0
155.0
Tvj
-40...+175
Storage temperature
Tstg
-55...+175
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
260
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
Rth(j-c)
0.48
K/W
Rth(j-c)
0.48
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
Rev.2.5,2013-02-12
IHW20N120R3
InductionHeatingSeries
ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
1200
VGE=15.0V,IC=20.0A
Tvj=25C
Tvj=125C
Tvj=175C
1.48
1.70
1.80
1.70
-
1.55
1.70
1.80
1.75
6.4
Unit
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA
Collector-emitter saturation voltage VCEsat
V
V
VF
VGE=0V,IF=20.0A
Tvj=25C
Tvj=125C
Tvj=175C
VGE(th)
IC=0.50mA,VCE=VGE
5.1
5.8
ICES
VCE=1200V,VGE=0V
Tvj=25C
Tvj=175C
IGES
VCE=0V,VGE=20V
100
nA
Transconductance
gfs
VCE=20V,IC=20.0A
18.3
rG
V
V
100.0 A
2500.0
none
ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
1503
50
42
211.0
nC
13.0
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Cres
Gate charge
QG
LE
VCE=25V,VGE=0V,f=1MHz
VCC=960V,IC=20.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
387
ns
25
ns
0.95
mJ
IGBTCharacteristic,atTvj=25C
Turn-off delay time
td(off)
Fall time
tf
Turn-off energy
Eoff
Tvj=25C,
VCC=600V,IC=20.0A,
VGE=0.0/15.0V,
rG=15.0,L=180nH,
C=39pF
L,CfromFig.E
Energy losses include tail and
diode reverse recovery.
Rev.2.5,2013-02-12
IHW20N120R3
InductionHeatingSeries
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
454
ns
84
ns
1.65
mJ
IGBTCharacteristic,atTvj=175C
Turn-off delay time
td(off)
Fall time
tf
Turn-off energy
Eoff
Tvj=175C,
VCC=600V,IC=20.0A,
VGE=0.0/15.0V,
rG=15.0,L=180nH,
C=39pF
L,CfromFig.E
Energy losses include tail and
diode reverse recovery.
Rev.2.5,2013-02-12
IHW20N120R3
InductionHeatingSeries
100
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
60
TC=80
40
TC=110
20
0
0.01
0.1
10
tp=1s
10
20s
100s
1ms
10ms
1
DC
0.1
100
5s
f,SWITCHINGFREQUENCY[kHz]
10
100
1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tj175C,D=0.5,VCE=600V,VGE=15/0V,
rG=15)
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25C,Tj175C;VGE=15V)
350
300
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
40
250
200
150
100
20
50
25
50
75
100
125
150
175
TC,CASETEMPERATURE[C]
25
50
75
100
125
150
175
TC,CASETEMPERATURE[C]
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tj175C)
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE15V,Tj175C)
Rev.2.5,2013-02-12
IHW20N120R3
InductionHeatingSeries
60
60
VGE=20V
VGE=20V
50
17V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
50
15V
40
13V
11V
9V
30
7V
5V
20
10
17V
15V
40
13V
11V
9V
30
7V
5V
20
10
VCE,COLLECTOR-EMITTERVOLTAGE[V]
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tj=25C)
Figure 6. Typicaloutputcharacteristic
(Tj=175C)
3.0
VCE(sat),COLLECTOR-EMITTERSATURATION[V]
Tj=25C
Tj=175C
IC,COLLECTORCURRENT[A]
60
50
40
30
20
10
10
IC=10A
IC=20A
IC=40A
2.5
2.0
1.5
1.0
12
VGE,GATE-EMITTERVOLTAGE[V]
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[C]
Figure 7. Typicaltransfercharacteristic
(VCE=20V)
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
Rev.2.5,2013-02-12
IHW20N120R3
InductionHeatingSeries
td(off)
tf
td(off)
tf
1000
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
1000
100
10
10
20
30
100
10
40
10
20
IC,COLLECTORCURRENT[A]
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(ind.load,Tj=175C,VCE=600V,VGE=15/0V,
rG=15,testcircuitinFig.E)
t,SWITCHINGTIMES[ns]
100
10
25
50
75
100
125
150
40
50
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
td(off)
tf
1000
30
rG,GATERESISTOR[]
175
Tj,JUNCTIONTEMPERATURE[C]
typ.
min.
max.
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[C]
Rev.2.5,2013-02-12
IHW20N120R3
InductionHeatingSeries
3
Eoff
Eoff
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
10
20
30
40
10
20
IC,COLLECTORCURRENT[A]
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(ind.load,Tj=175C,VCE=600V,VGE=15/0V,
rG=15,testcircuitinFig.E)
50
2.2
Eoff
E,SWITCHINGENERGYLOSSES[mJ]
Eoff
E,SWITCHINGENERGYLOSSES[mJ]
40
30
rG,GATERESISTOR[]
25
50
75
100
125
150
2.0
1.8
1.6
1.4
1.2
400
175
Tj,JUNCTIONTEMPERATURE[C]
500
600
700
800
900
1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
10
Rev.2.5,2013-02-12
IHW20N120R3
InductionHeatingSeries
15.0
240V
960V
1000
C,CAPACITANCE[pF]
VGE,GATE-EMITTERVOLTAGE[V]
12.5
10.0
7.5
5.0
Ciss
Coss
Crss
100
2.5
0.0
40
80
120
160
10
200
QGE,GATECHARGE[nC]
10
30
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
D=0.5
0.2
1E-5
1E-4
0.001
0.01
0.1
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
5
6
ri[K/W]: 9.8E-3 0.01407993 0.0698 0.1158 0.1569 0.1137
i[s]:
2.8E-5 4.7E-5
2.0E-4 1.2E-3 9.9E-3 0.08835259
0.001
1E-6
20
VCE,COLLECTOR-EMITTERVOLTAGE[V]
ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W]
i:
1
2
3
4
5
6
ri[K/W]: 9.8E-3 0.0141 0.0698 0.1158 0.1569 0.1137
i[s]:
2.8E-5 4.7E-5 2.0E-4 1.2E-3 9.9E-3 0.08835259
0.001
1E-6
tp,PULSEWIDTH[s]
1E-5
1E-4
0.001
0.01
0.1
tp,PULSEWIDTH[s]
11
Rev.2.5,2013-02-12
IHW20N120R3
InductionHeatingSeries
40
3
IC=10A
IC=20A
IC=40A
30
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
Tj=25C
Tj=175C
20
10
VF,FORWARDVOLTAGE[V]
25
50
75
100
125
150
175
Tj,JUNCTIONTEMPERATURE[C]
12
Rev.2.5,2013-02-12
IHW20N120R3
InductionHeatingSeries
PG-TO247-3
13
Rev.2.5,2013-02-12
IHW20N120R3
InductionHeatingSeries
14
Rev.2.5,2013-02-12
IHW20N120R3
InductionHeatingSeries
RevisionHistory
IHW20N120R3
Revision:2013-02-12,Rev.2.5
Previous Revision
Revision
Date
1.1
2008-05-06
1.2
2008-07-11
2.3
2008-07-29
2.4
2009-04-01
2.5
2013-02-12
Layout change
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InfineonTechnologiesAG
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81726Mnchen,Germany
2013InfineonTechnologiesAG
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endangered.
15
Rev.2.5,2013-02-12