Introduction

Amplification in the AC Domain

BJT Transistor Modeling
The Important Parameters
The re Transistor Model
The Hybrid Equivalent Model
2
Introduction
Amplification in the AC Domain
BJT Transistor Modeling
The Important Parameters
The re Transistor Model
The Hybrid Equivalent Model
3
BJT acts as amplifier in active region.
Sinusoidal ac analysis of transistor : the magnitude
of input signal will determine whether it is a small
signal or large signal.
We are going to examine the small signal ac
response of the BJT amplifier.

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Introduction
Amplification in the AC Domain
BJT Transistor Modeling
The Important Parameters
The re Transistor Model
The Hybrid Equivalent Model
5
Remember? Transistor can be employed as an
amplifier!
Amplifier: when the output sinusoidal signal
is larger than the input signal
means, ac power output is greater than ac
power input

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How about dc?
DC supply produce
steady current:
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Insert a control mechanism
that applies small signal
Input dc plays
a role for
amplification
to contribute
its level to the
ac domain
Introduction
Amplification in the AC Domain
BJT Transistor Modeling
The Important Parameters
The re Transistor Model
The Hybrid Equivalent Model
8
A model is an equivalent circuit that represents the
AC characteristics of the transistor.
It uses circuit elements that approximate the
behavior of the transistor.
DC levels are important to determine Q-point.
Once Q-point determined, DC level can be ignored.
There are two models commonly used in the small
signal analysis:
r
e
model
hybrid equivalent model

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AC equivalent of a network is obtained by:
All DC sources to zero and replaced by short circuit.
Replace all capacitors by a short circuit equivalent.
Remove all bypassed by a short circuit equivalent.
Redrawing network.

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11
Transistor
small-signal ac
equivalent circuit
Introduction
Amplification in the AC Domain
BJT Transistor Modeling
The Important Parameters
The r
e
Transistor Model
The Hybrid Equivalent Model
12
Parameters of a two-port system:
Input impedance, Z
i



Output impedance, Z
o



Voltage gain, A
v



Current gain, A
i
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For frequencies <100kHz, the input impedance of
BJT amplifier depends on the input connection; may
vary from a few ohms to megohms.
An ohmeter cannot be used to measure small-
signal ac input impedance.

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Signal source has 600ohm internal resistance, the system has
a 1.2kohm input resistance.
If the source were ideal, full 10mW would be applied to the
system.
However in this case, Vi is determined using voltage divider
rule:
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Level of input impedance can have
significant impact on the level of signal that
reaches the system.
For amplifier configurations where large gain
is desired, the level of Zo should be as large
as possible/
If Zo>>RL, the majority of the amplifier
output current will pass on the load.
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There is not load at the output terminals
Input voltage is calculated as
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For BJT amplifiers, current
gain usually ranges from
less than 1 ~ >100
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Introduction
Amplification in the AC Domain
BJT Transistor Modeling
The Important Parameters
The r
e
Transistor Model
The Hybrid Equivalent Model
22
BJT are mostly current-controlled devices,
therefore the re model uses diode and a
current source to duplicate the transistor
behavior.
Disadvantages:
Re transistor model: Fails to account the output
impedance level of device and feedback effect from
output to input
Hybrid equivalent model: Limited to specified
operating condition in order to obtain accurate
result

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Common Base PNP Configuration
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The ac resistance of a
diode can be determined
by the equation;




Where I
E
equals to I
D

which is is the dc current
through the diode at the
Q-point.
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E
I
mV
re
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=
Input impedance is
relatively small and
output impedance
quite high.


range from a few
to max 50


Typical values are in
the M

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CB i
re Z =
CB
Zo O =
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re
R
A
re
R
r I
R I
V
V
A
r I
Z I
Z I V
R I
R I
R I V
L
V
L
e e
L e
i
O
V
e e
i e
i i i
L e
L C
L o o
=
=
= =
=
=
=
=
=
=


: gain voltage


: age input volt

) (
: tage output vol
o
o
o
The fact that the polarity of the V
o
as determined
by the current I
C
is the same as defined by figure
below.
It reveals that V
o
and V
i
are in phase for the
common-base configuration.
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1 ~ =

= =
o
o
i
e
e
e
C
i
o
i
A
I
I
I
I
I
I
A
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Approximate model for a common-base npn transistor configuration
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Example 1: For a common-base configuration in figure
below with I
E
=4mA, o=0.98 and AC signal of 2mV is
applied between the base and emitter terminal:
a) Determine the Z
i
b) Calculate A
v
if R
L
=0.56kO
c) Find Z
o
and A
i
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Solution:

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Example 2: For a common-base configuration in previous
example with I
e
=0.5mA, o=0.98 and AC signal of 10mV is
applied, determine:
a) Z
i
b) V
o
if R
L
=1.2kO c) A
v
d)A
i
e) I
b
Base and emitter are
input terminal
Collector and emitter
are output terminals

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Substitute re
equivalent circuit


Current through
diode
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Input impedance
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37
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Output impedance Z
o

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Voltage Gain
Current Gain
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Example 3: Given |=120 and I
E(dc)
=3.2mA for a common-
emitter configuration with ro= O, determine:

a) Z
i
b)A
v
if a load of 2 kO is applied c) A
i
with the 2 kO load
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Example 4: Using the npn common-emitter configuration,
determine the following if |=80, I
E(dc)
=2 mA and r
o
=40 kO

a) Z
i
b) A
i
if R
L
=1.2k O c) Av if R
L
=1.2k O
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For the CC configuration, the model defined
for the common-emitter configuration is
normally applied rather than defining a model
for the common-collector configuration.
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