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DMG2307L

P-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary
V(BR)DSS RDS(ON) max 90m @ VGS = -10V ID max TA = 25C -3.8A -3.1A

Features and Benefits


Low On-Resistance Low Input Capacitance Fast Switching Speed Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 standards for High Reliability

NEW PRODUCT

-30V 134m @ VGS = -4.5V

Description and Applications


This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. General Purpose Interfacing Switch Power Management Functions Load Switch for Portable Devices

Mechanical Data
Case: SOT-23 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.08 grams (approximate)

Ordering Information (Note 3)


Part Number DMG2307L-7
Notes:

Case SOT-23

Packaging 3000Tape & Reel

1. No purposefully added lead. 2. Diodes Inc.s Green policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com.

Marking Information

DMG2307L
Document number: DS35414 Rev. 1 2

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July 2011
Diodes Incorporated

DMG2307L Maximum Ratings @TA = 25C unless otherwise specified


Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 4) VGS = -10V Steady State Steady State t10sec Steady State TA = 25C TA = 70C TA = 25C TA = 70C TA = 25C TA = 70C TA = 25C TA = 70C Symbol VDSS VGSS ID ID ID ID IDM Value -30 20 -2.5 -2.0 -3.8 -3.0 -4.6 -3.6 -3.1 -2.5 -20 Units V V A A A A A

NEW PRODUCT

Continuous Drain Current (Note 5) VGS = -10V Continuous Drain Current (Note 5) VGS = -10V Continuous Drain Current (Note 5) VGS = -4.5V Pulsed Drain Current (Note 5)

Thermal Characteristics

@TA = 25C unless otherwise specified Symbol PD RJA PD RJA PD RJA TJ, TSTG Value 0.76 159 1.36 94 1.9 65.8 -55 to +150 Units W C/W W C/W W C/W C

Characteristic Total Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient (Note 4) Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 5) t 10sec Thermal Resistance, Junction to Ambient (Note 5) t 10sec Operating and Storage Temperature Range

Electrical Characteristics @TA = 25C unless otherwise specified


Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage (Note 6) DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
Notes:

Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) |Yfs| VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf

Min -30 -1.0 -

Typ 70 105 4.8 -0.75 371.3 51.3 45.9 17 4.0 8.2 0.9 1.2 4.8 7.3 22.4 13.4

Max -1.0 100 -3.0 90 134 -1.0 -

Unit V A nA V m S V pF pF pF nC nC nC nC ns ns ns ns

Test Condition VGS = 0V, ID = -250A VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250A VGS = -10V, ID = -2.5A VGS = -4.5V, ID = -2.5A VDS = -10V, ID = -2.5A VGS = 0V, IS = -1A VDS = -15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V,f = 1.0MHz VGS = -10V, VDS = -15V, ID = -3A

@Tc = 25C

VDS = -15V, VGS = -10V, RL = 15, RG = 6, ID = -1A

4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing.

DMG2307L
Document number: DS35414 Rev. 1 2

2 of 7 www.diodes.com

July 2011
Diodes Incorporated

DMG2307L
8.0
VGS=3.5V VGS =3.0V

8
VDS= 5.0V TA = -55C T A = 25C

TA = 125C

T A = 150 C

ID, DRAIN CURRENT (A)

VGS =4.0V VGS=4.5V

ID, DRAIN CURRENT (A)

6.0

6
TA = 85C

NEW PRODUCT

4.0

VGS=10V

VGS=2.5V

2.0
VGS=2.0V

0.0

0 0 0.5 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics 1 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 5

RDS(ON),DRAIN-SOURCE ON-RESISTANCE()

RDS(ON), DRAIN-SOURCE ON-RESISTANCE()

0.4 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0

0.2
VGS= 4.5V TA = 125C TA = 150C

0.16

0.12
T A = 85C

0.08

TA = 25C T A = -55C

0.04

0
0 2 4 6 8

ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage

2 4 6 ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature

1.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

0.2

1.4

0.16
VGS=4.5V ID=2A

1.2

0.12

0.08
VGS=10V ID=2.7A

0.8

0.04

0.6 -50

-25

25

50

75

100

125

150

0 -50

TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature

-25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 6 On-Resistance Variation with Temperature

DMG2307L
Document number: DS35414 Rev. 1 2

3 of 7 www.diodes.com

July 2011
Diodes Incorporated

DMG2307L
2 VGS(TH), GATE THRESHOLD VOLTAGE(V)
8

IS, SOURCE CURRENT (A)

1.6

1.2

NEW PRODUCT

0.8

0.4

0 -50

0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature
f = 1MHz

-25

0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current

1.4

1000

10000
TA =150C

CT, JUNCTION CAPACITANCE (pF)

IDSS, LEAKAGE CURRENT (nA)

CISS

1000
TA =125C T A =85C

100

100
COSS CRSS

10

T A =25C

10

0.1

10

15

20

25

30

VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance

10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE(V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

10

100
RDS(ON) Limited -I D(A) @PW=1ms -ID(A) @ PW=10s
(A ) @ P

VGS, GATE-SOURCE VOLTAGE (V)

8
-ID, DRAIN CURRENT (A) 10
-I D

W=

10 0 s

-I D(A) @ DC -ID(A) @PW=10s -ID(A) @PW =1s

0.1
T J(MAX) = 150C T A = 25C Single Pulse

-ID(A) @PW=100ms -I D(A) @PW=10ms

0 0 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Fig. 11 Gate-Charge Characteristics 10

0.01 0.1

1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 SOA, Safe Operation Area

100

DMG2307L
Document number: DS35414 Rev. 1 2

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July 2011
Diodes Incorporated

DMG2307L
1

r(t), TRANSIENT THERMAL RESISTANCE

NEW PRODUCT

0.1

0.01

RJA(t)=r(t) * RJA RJA=54C/W Duty Cycle, D=t1/ t2

0.001 0.00001

0.0001

0.001

0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 13 Transient Thermal Resistance

10

100

1000

DMG2307L
Document number: DS35414 Rev. 1 2

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July 2011
Diodes Incorporated

DMG2307L

Package Outline Dimensions


A

B C

H K D J F G L M

K1

SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.903 1.10 1.00 K1 0.400 L 0.45 0.61 0.55 M 0.085 0.18 0.11 0 8 All Dimensions in mm

NEW PRODUCT

Suggested Pad Layout

Y Z

Dimensions Value (in mm) Z 2.9 X 0.8 Y 0.9 2.0 C 1.35 E

DMG2307L
Document number: DS35414 Rev. 1 2

6 of 7 www.diodes.com

July 2011
Diodes Incorporated

DMG2307L

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NEW PRODUCT

DMG2307L
Document number: DS35414 Rev. 1 2

7 of 7 www.diodes.com

July 2011
Diodes Incorporated

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