Ch04 Bipolar Junction Transistors (BJTS) (41 PP) PDF

Chapter 4
Basic Electronic Devices and Circuits

EE 111
Electrical Engineering
Majmaah University
2
nd
Semester 1432/1433 H
2012 Pearson Education. Upper Saddle River, NJ, 07458.
All rights reserved.
Electronic Devices, 9th edition
Thomas L. Floyd
1
Bipolar Junction Transistors (BJTs)
Introduction
The invention oI the transistor was the beginning oI a
technological revolution that is still continuing.
All oI the complex electronic devices and systems today are
an outgrowth oI early developments in semiconductor
transistors.
Two basic types oI transistors are
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the bipolar junction transistor (BJT),
and the Iield-eIIect transistor (FET).
The BJT is used in two broad areas
as a linear ampliIier to boost or ampliIy an electrical
signal,
as an electronic switch.
The term bipolar reIers to the use oI both holes and electrons
as current carriers in the transistor structure.
BJT Structure
The BJT has three regions called the emitter, base, and
collector. Between the regions are junctions as indicated.
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B
(base)
C (collector)
n
p
n
Base-Collector
junction
Base-Emitter
junction
E (emitter)
B
C
p
n
E
p
npn pnp
The base is a thin
lightly doped region
compared to the
heavily doped emitter
and moderately doped
collector regions.
BJT Structure
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BJT Symbols
B
(base)
C (collector)
n
p
n
Base-Collector
junction
Base-Emitter
junction
E (emitter)
B
C
p
n
E
p
npn pnp
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5
npn pnp
BJT Biasing
In normal operation, the base-emitter (BE) is Iorward-
biased and the base-collector (BC) is reverse-biased.
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npn
BC reverse-
biased
BE Iorward-
biased
For the npn type shown, the
collector is more positive
than the base, which is more
positive than the emitter.
C n
E n
B p
BJT Biasing
In normal operation, the base-emitter (BE) is Iorward-
biased and the base-collector (BC) is reverse-biased.
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7
For the pnp tvpe, the voltages
are reversed to maintain the
Iorward-reverse bias.
BC reverse-
biased
BE Iorward-
biased
pnp
C p
E p
B n
BJT Operation (npn)
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Direction oI
electron
Ilow:
I
E
I
C
I
B
BJT Operation (npn)
The heavily doped n-type emitter region has a very high
density oI conduction-band (Iree) electrons.
These Iree electrons easily diIIuse through the Iorward-
biased BE junction into the lightly doped and very thin p-type
base region (wide arrow).
The lightly doped p type base has a low density oI holes
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The lightly doped p-type base has a low density oI holes,
which are the majority carriers (white circles).
A small percentage oI the total number oI Iree electrons
injected into the base region recombine with holes and move
as valence electrons through the base region, and holes into
the emitter region as hole current (red arrows).
BJT Operation (npn)
When the electrons that have recombined with holes as valence
electrons leave the crystalline structure oI the base, they become Iree
electrons in the metallic base lead and produce the external base
current.
Most oI the Iree electrons that have entered the base do not
recombine with holes because the base is very thin (no enough holes).
As the Iree electrons move toward the reverse-biased BC junction
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As the Iree electrons move toward the reverse biased BC junction,
they are swept across into the collector region by the attraction oI the
positive collector supply voltage.
The Iree electrons move through the collector region, into the
external circuit, and then return into the emitter region along with the
base current (I
E
I
C
I
B
).
The emitter current is slightly greater than the collector current
because oI the small base current that splits oII Irom the total current
injected into the base region Irom the emitter (I
E
I
C
I
B
).
BJT Currents
The direction oI conventional current is in the direction oI the arrow
on the emitter terminal.
The emitter current is the sum oI the collector current and the small
base current. That is, I
E
I
C
I
B
.
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I
E I
E
I
C
I
B
I
C
I
B
n
p
n
p
n
p

I
E
I
C
I
B
I
E
I
C
I
B
npn pnp
DC Bias Circuits
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12
DC Beta (
DC
) and DC Alpha (o
DC
)
The dc current gain oI a transistor is the ratio oI the dc collector current (I
C
)
to the dc base current (I
B
) and is designated dc beta (
DC
).
Typical values oI
DC
range Irom less than 20 to 200 or higher.
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13
The ratio oI the dc collector current (I
C
) to the dc emitter current (I
E
) is the
dc alpha (o
DC
).
The alpha is a less-used parameter than beta in transistor circuits.
Typically, values oI o
DC
range Irom 0.95 to 0.99 or greater, but o
DC
is
always less than 1.
The reason is that I
C
is always slightly less than I
E
by the amount oI I
B
(I
E
I
C
I
B
).
DC Beta (
DC
) and DC Alpha (o
DC
)
Example.
II I
E
100 mA and I
B
1 mA,
then
I
C
I
E
I
B
100 1 99 mA
and
o
DC
I
C
/ I
E
99 / 100 0.99.
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14
Transistor DC Model
Unsaturated BJT.
Iorward-biased diode
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BJT Circuit Analysis
B
: dc base current
E
: dc emitter current
C
: dc collector current
BE
: dc voltage at base
with respect to emitter
KCL: I
E
I
C
I
B
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CB
: dc voltage at
collector with respect
to base
CE
: dc voltage at
collector with respect
to emitter
KVL: J
CE
J
CB
J
BE
J
BB
Iorward-biases the BE junction, and J
CC
reverse-biases the BC junction.
When BE is Iorward-biased, it is like a Iorward-biased diode and has a
nominal Iorward voltage drop oI ~0.7 V
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> 0
The collector characteristic curves show the relationship
oI the three transistor currents.
BJT Characteristics
I
C
Breakdown
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18
The curve shown is Ior a Iixed
base current. The Iirst region is
the saturation region. As J
CE
is
increased, I
C
increases until B.
B
C
A
0 0.7 V J
CE(max)
J
CE
Saturation
region
Active region
Breakdown
region
Then it Ilattens in the region
between points B and C, which
is the active region.
AIter C, is the breakdown
region.
I
C
versus J
CE
curve
Ior one value oI I
B
BJT Characteristics
Consider point on the characteristic curve:
Assume that J
BB
is set to produce a certain value oI I
B
and J
CC
is zero.
For this condition, both the BE junction and the BC junction are Iorward-
biased,
because the base is at approximately 0.7 V while the emitter and the
collector are at 0 V.
I
B
is through the BE junction,
because oI the low impedance path to ground and, thereIore, I
C
is zero.
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19
p p g , ,
C
When both junctions are Iorward-biased, the transistor is in the saturation
region oI its operation.
Consider the portion of the curve between points and :
Saturation is the state oI a BJT in which I
C
has reached a maximum and is
independent oI I
B
(I
C
=
DC
I
B
). I
B
is constant, but I
C
is increasing.
When J
CC
is increased, J
CE
increases as I
C
increases.
I
C
increases as J
CC
is increased because J
CE
remains less than 0.7 V due
to the Iorward-biased BC junction.
J
CE
J
CB
J
BE
negative 0.7 0.7 and I
C
(J
CC
J
CE
) / R
C
BJT Characteristics
Consider the portion of the curve between points and :
Ideally, when J
CE
exceeds 0.7 V, the BC junction becomes reverse-biased
and the transistor goes into the active, or linear, region oI its operation.
Once the BC junction is reverse-biased, I
C
levels oII and remains
essentially constant Ior a given value oI I
B
as J
CE
continues to increase.
Actually, I
C
increases very slightly as J
CE
increases due to widening oI the
BC depletion region
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20
BC depletion region.
This results in Iewer holes Ior recombination in the base region which
eIIectively causes a slight increase in
DC
.
For this portion oI the characteristic curve, the value oI I
C
is determined
only by the relationship I
C

DC
I
B
.
Consider the portion of the curve to the right of point :
When J
CE
reaches a suIIiciently high voltage, the reverse-biased BC
junction goes into breakdown; and I
C
increases rapidly.
A transistor should never be operated in this breakdown region.
I
C
I
B6
By setting up other values oI
base current, a Iamily oI
collector curves is developed
BJT Characteristics
Family oI I
C
versus J
CE
curves Ior
several values oI I
B
(I
B1
I
B2
I
B3
, etc.)
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21
0
J
CE
I
B5
I
B4
I
B3
I
B2
I
B1
I
B
0 Cutoff region
collector curves is developed.

DC
is the ratio of collector
current to base current.
It can be read Irom the curves.
The value oI
DC
is nearly the
same wherever it is read.
C
DC
B
I
I

BJT Characteristics
A Iamily oI collector characteristic curves is produced when
I
C
versus J
CE
is plotted Ior several values oI I
B
.
When I
B
0, the transistor is in the cutoII region although
there is a very small collector leakage current.
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22
CutoII is the non-conducting state oI a transistor.
The amount oI collector leakage current Ior I
B
0 is
exaggerated on the graph Ior illustration.
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24
What is the
DC
Ior the transistor shown?
I
C
I
B6
60 A
(mA)
BJT Characteristics
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Choose a base current near the
center oI the range. In this case
I
B3
which is 30 A.
J
CE
I
B6
I
B5
I
B4
B3
I
I
B2
B1
I
I
B
0
10 A
20 A
30 A
0
60 A
40 A
50 A
10.0
8.0
6.0
4.0
2.0
0
Read the corresponding
collector current in this case,
5.0 mA. Calculate the ratio:
C
DC
B
5.0 mA
30 A
I
I
167
CutoII
In a BJT, cutoff is the condition in which there is no base
current (I
B
0), which results in only an extremely small
leakage current (I
CEO
- 0) in the collector circuit (due mainly
to thermally produced carriers).
For practical work this current is assumed to be zero
Thomas L. Floyd
26
For practical work, this current is assumed to be zero.
I
B
0

I
CEO
R
C
J
CC
J
CE
J
CC
R
B
In cutoII, neither the BE junction,
nor the BC junction are Iorward-
biased.
The subscript CEO represents
collector-to-emitter with the base
open.
Saturation
In a BJT, saturation is the condition in which there is
maximum I
C
.
The saturation current is determined by the external circuit
(J and R in this case) because the CE voltage is minimum
Thomas L. Floyd
27
(J
CC
and R
C
in this case) because the CE voltage is minimum
(J
CE
- 0.2 V). J
CE
J
CC
I
C
R
C
In saturation, an increase oI I
B
has
no eIIect on the collector circuit and
the relation I
C

DC
I
B
is no longer
valid.

J
CC
J
BB
J
CE
J
CC
I
C
R
C
R
B
R
C
I
B
I
C

Saturation
When the BE junction becomes Iorward-biased and I
B
is
increased, I
C
also increases (I
C

DC
I
B
),
and V
CE
decreases as a result oI more drop across R
C
,
J
CE
J
CC
I
C
R
C
Wh J h i i l J h BC j i
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28
When J
CE
reaches its saturation value, J
CE(sat)
, the BC junction
becomes Iorward-biased and I
C
can increase no Iurther, even with
a continued increase in I
B
.
At the point oI saturation, the relation I
C

DC
I
B
is no longer
valid.
V
CE(sat)
Ior a transistor occurs somewhere below the knee oI the
collector curves, and it is usually only a Iew tenths oI a volt.
DC Load Line
the transistor. It is drawn by
connecting the saturation
The DC load line represents the circuit that is external to
I
C
Saturation
Thomas L. Floyd
29
and cutoII points.
The transistor characteristic
curves are shown superimposed
on the load line.
The region between the
saturation and cutoII points is
called the active region.
0
J
CE
I
B
0
CutoII
J
CE(sat)
J
CC
I
C(sat)
Saturation
DC Load Line
What is the saturation current Ior the
circuit? Assume J
CE
0.2 V in
saturation.

J
CC
15 V
J
BB
3 V
R
C
R
B
DC
200
220 k
3.3 k
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30
CC
SAT
C
0.2 V 15 V 0.2 V
3.3 k
J
I
R

4.48 mA
Is the transistor saturated?
B
3.0 V 0.7 V
10.45 A
220 k
I
I
C
I
B
200 (10.45 A) 2.09 mA
Since I
C
I
SAT
, it is not saturated.
Thomas L. Floyd
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Thomas L. Floyd
32
(repeated)
DC and AC Quantities
The text uses capital letters Ior both AC and DC currents (I) and voltages
(J), with rms values assumed unless stated otherwise.
DC Quantities use upper case roman subscripts. Example: J
CE
. The
Thomas L. Floyd
39
second letter in the subscript indicates the reIerence point ().
AC Quantities and time varying signals use lower case italic
subscripts. Example: J
ce
.
Internal transistor resistances are indicated as lower case
quantities with a prime and an appropriate subscript. Example: r
e
.
External resistances are indicated as capital R with either a
capital or lower case subscript depending on whether it is a DC or
ac resistance. Examples: R
C
and R
c
.
BJT AmpliIiers
A BJT ampliIies AC signals by converting some oI the DC power Irom
the power supplies to AC signal power.
An ac signal at the input is superimposed in the dc bias by capacitive
coupling.
The output ac signal is inverted and rides on a dc level oI J
CE
.
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40
J
CC
J
BB
R
B
R
C
J
b
J
c
r
e
J
in
J
CE
J
c
J
BB
J
in
0
0
Thomas L. Floyd
41
BJT Switches
A BJT can be used as a switching device
in logic circuits to turn on or oII current to
a load. As a switch, the transistor is
normally in either cutoII (load is OFF) or
saturation (load is ON).
0
I
C
J
CE
I
B
0
CutoII
J
CE(sat)
J
CC
I
C(sat)
Saturation
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42
In cutoII, the transistor
looks like an open switch.
In saturation, the transistor
looks like a closed switch.
R
B
0 V
R
C
I
C
0
J
CC
R
C
C
E
J
CC
I
B
0

R
B
R
C
I
C(sat)
J
CC
R
C
C
E
J
CC
I
B
J
BB
I
C(sat)
Thomas L. Floyd
43
Thomas L. Floyd
44
A Sample oI Common Transistor Packages
1
1 Emitter
2
Base
3 Collector
1
Base
3 Collector
1
3
2
Base
3 Collector
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45
1
2
3
1 Emitter
TO-92
2 Emitter
2
SOT-23
1 Emitter
Base
3 2
1
TO-18
C (case)
E
B
TO-3
B
C
E
C
TO-220AB
E
C
B
TO-225AA
Selected Key Terms Selected Key Terms Selected Key Terms
B11 (bipolar
junction
transistor)
Emitter
a transistor constructed with three doped
semiconductor regions separated by two pn
junctions.
the most heavily doped oI the three
semiconductor regions oI a BJT
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Base
Collector
semiconductor regions oI a BJT.
one oI the three semiconductor regions oI a BJT.
The base is thin and lightly doped compared to
the other regions.
the largest oI the three semiconductor regions oI
a BJT.
Selected Key Terms Selected Key Terms Selected Key Terms
Beta
Saturation
the ratio oI dc collector current to the dc base
current in a BJT; current gain Irom base to
collector.
the state oI a BJT in which the collector
current has reached a maximum and is
Thomas L. Floyd
47
Cutoff
current has reached a maximum and is
independent oI the base current.
the nonconducting state oI a transistor.

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Chapter 4

Basic Electronic Devices and Circuits

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