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SEMICONDUCTOR TECHNICAL DATA

Order this document by 2N4402/D

General Purpose Transistors

PNP Silicon

2N4402 2N4403*
*Motorola Preferred Device

COLLECTOR 3 2 BASE 1 EMITTER

1 2 3

MAXIMUM RATINGS
Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 40 40 5.0 600 625 5.0 1.5 12 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watt mW/C C CASE 2904, STYLE 1 TO92 (TO226AA)

THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0) Emitter Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) Base Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) Collector Cutoff Current (VCE = 35 Vdc, VEB = 0.4 Vdc) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX 40 40 5.0 0.1 0.1 Vdc Vdc Vdc Adc Adc

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola SmallSignal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996

2N4402 2N4403
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) hFE 2N4403 2N4402 2N4403 2N4402 2N4403 2N4402 2N4403 Both VCE(sat) VBE(sat) 0.75 0.95 1.3 0.4 0.75 Vdc 30 30 60 50 100 50 100 20 150 300 Vdc

(IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc)(1) (IC = 500 mAdc, VCE = 2.0 Vdc)(1) Collector Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc) Base Emitter Saturation Voltage(1) (IC = 150 mAdc, IB = 15 mAdc) (IC = 500 mAdc, IB = 50 mAdc)

SMALL SIGNAL CHARACTERISTICS

Current Gain Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz) CollectorBase Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) EmitterBase Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) SmallSignal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Output Admittance (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2N4402 2N4403 hoe 2N4402 2N4403 hre hfe 30 60 1.0 250 500 100 mhos fT 2N4402 2N4403 Ccb Ceb hie 750 1.5 k 0.1 7.5 k 15 k 8.0 X 104 150 200 8.5 30 pF pF ohms MHz

SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time (VCC = 30 Vdc, VBE = + 2.0 Vdc, IC = 150 mAdc, IB1 = 15 mAdc) (VCC = 30 Vdc, IC = 150 mAdc, IB1 = 15 mA, IB2 = 15 mA) td tr ts tf 15 20 225 30 ns ns ns ns

1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUIT

30 V < 2 ns +2 V 0 16 V 1.0 k 10 to 100 s, DUTY CYCLE = 2% CS* < 10 pF 200 +14 V 0 16 V < 20 ns 1.0 k 1.0 to 100 s, DUTY CYCLE = 2% 30 V 200

CS* < 10 pF

+ 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope

Figure 1. TurnOn Time 2

Figure 2. TurnOff Time Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N4402 2N4403
TRANSIENT CHARACTERISTICS
25C 30 20 CAPACITANCE (pF) 100C 10 7.0 5.0 Ceb 3.0 Q, CHARGE (nC) 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.1 0.2 0.3 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 20 30 10 20 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 10 7.0 5.0 Ccb

VCC = 30 V IC/IB = 10

QT QA

Figure 3. Capacitances

Figure 4. Charge Data

100 70 50 t r , RISE TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10

100 70 50 30 20 VCC = 30 V IC/IB = 10

10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA)

Figure 5. TurnOn Time

Figure 6. Rise Time

200 IC/IB = 10 t s, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts = ts 1/8 tf 30 20 IC/IB = 20

10

20

30

50

70

100

200

300

500

IC, COLLECTOR CURRENT (mA)

Figure 7. Storage Time

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N4402 2N4403
SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VCE = 10 Vdc, TA = 25C Bandwidth = 1.0 Hz
10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 IC = 500 A, RS = 560 IC = 50 A, RS = 2.7 k IC = 100 A, RS = 1.6 k NF, NOISE FIGURE (dB) 8

IC = 50 A 100 A 500 A 1.0 mA

RS = OPTIMUM SOURCE RESISTANCE

0 0.01 0.02 0.05 0.1 0.2

0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k RS, SOURCE RESISTANCE (OHMS)

f, FREQUENCY (kHz)

Figure 8. Frequency Effects

Figure 9. Source Resistance Effects

h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C selected from both the 2N4402 and 2N4403 lines, and the This group of graphs illustrates the relationship between same units were used to develop the correspondingly hfe and other h parameters for this series of transistors. To numbered curves on each graph. obtain these curves, a highgain and a lowgain unit were
1000 700 500 hfe , CURRENT GAIN 300 200 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2

100 70 50

IC, COLLECTOR CURRENT (mAdc)

IC, COLLECTOR CURRENT (mAdc)

Figure 10. Current Gain

20 h re , VOLTAGE FEEDBACK RATIO (X 10 4 ) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 hoe, OUTPUT ADMITTANCE (m mhos) 500

Figure 11. Input Impedance

100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 3.0 5.0 7.0 10

IC, COLLECTOR CURRENT (mAdc)

IC, COLLECTOR CURRENT (mAdc)

Figure 12. Voltage Feedback Ratio 4

Figure 13. Output Admittance Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N4402 2N4403
STATIC CHARACTERISTICS
3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 55C

0.2

0.3

0.5

0.7

1.0

2.0

3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA)

30

50

70

100

200

300

500

Figure 14. DC Current Gain

VCE, COLLECTOREMITTER VOLTAGE (VOLTS)

1.0 0.8

0.6 IC = 1.0 mA 0.4 10 mA 100 mA 500 mA

0.2

0 0.005

0.01

0.02

0.03

0.05 0.07 0.1

0.2

0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA)

2.0

3.0

5.0

7.0

10

20

30

50

Figure 15. Collector Saturation Region

1.0 0.8 VOLTAGE (VOLTS)

TJ = 25C VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C)

0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2

qVC for VCE(sat)

0.6

VBE(sat) @ VCE = 10 V

0.4

0.2

qVS for VBE

0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500

0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500

Figure 16. On Voltages

Figure 17. Temperature Coefficients

Motorola SmallSignal Transistors, FETs and Diodes Device Data

2N4402 2N4403
PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 0.250 0.080 0.105 0.100 0.115 0.135 MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 6.35 2.04 2.66 2.54 2.93 3.43

A R P
SEATING PLANE

L K D

X X G H V
1

C N N

SECTION XX

DIM A B C D F G H J K L N P R V

CASE 02904 (TO226AA) ISSUE AD

STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR

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Motorola SmallSignal Transistors, FETs and Diodes Device Data

*2N4402/D*

2N4402/D