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CYStech Electronics Corp.

Silicon NPN Epitaxial Planar Transistor

Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2012.11.23 Page No. : 1/6

BTD1857AM3
Description
High BVCEO High current capability Complementary to BTB1236AM3 Pb-free lead plating and halogen-free package

BVCEO IC RCESAT(MAX)

160V 1.5A 0.3

Symbol
BTD1857AM3

Outline
SOT-89

BBase CCollector EEmitter

B C E

Absolute Maximum Ratings (Ta=25C)


Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation Symbol VCBO VCEO VEBO IC ICP PD Limits 180 160 5 1.5 3 0.6 1 (Note 1) 2 (Note 2) -55~+150 Unit V V V A A W C

Operating Junction and Storage Temperature Range Tj ; Tstg Note : 1. When mounted on FR-4 PCB with area measuring 10101 mm
2 . When mounted on ceramic with area measuring 40401 mm

BTD1857AM3

CYStek Product Specification

CYStech Electronics Corp.


Thermal Characteristics
Parameter Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RJA
RJC

Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2012.11.23 Page No. : 2/6

Value 208 125 (Note 1) 62.5 (Note 2)


39.3

Unit C/W
C/W

Note : 1. When mounted on FR-4 PCB with area measuring 10101 mm 2 . When mounted on ceramic with area measuring 40401 mm

Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *RCE(sat) *VBE(on) hFE1 hFE2 fT Cob Min. 180 160 5 180 30 Typ. 140 27 Max. 1 1 0.3 0.3 1.5 390 Unit V V V A A V V MHz pF Test Conditions IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=160V, IE=0 VEB=4V, IC=0 IC=1A, IB=100mA IC=1A, IB=100mA VCE=5V, IC=150mA VCE=5V, IC=150mA VCE=5V, IC=500mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%

Ordering Information
Device BTD1857AM3 Package SOT-89 (Pb-free lead plating and halogen-free package) Shipping 1000 pcs / Tape & Reel Marking DQ

BTD1857AM3

CYStek Product Specification

CYStech Electronics Corp.


Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V Tj=125

Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2012.11.23 Page No. : 3/6

Saturation Voltage vs Collector Current


1000
VCE(SAT)@IC=10IB

100
Tj=75 Tj=25

Saturation Voltage---(mV)

Current Gain---HFE

100
Tj=125 Tj=75

Tj=25

10 1 10 100 1000 Collector Current---IC(mA) 10000

10 10 100 1000 Collector Current---IC(mA) 10000

Saturation Voltage vs Collector Current


1000
Tj=25

On Voltage vs Collector Current


1000
Tj=25

Saturation Voltage---(mV)

Tj=125 Tj=75

On Voltage---(mV)

Tj=125 Tj=75

VBE(SAT)@IC=10IB

VBE(ON)@VCE=5V

100 1 10 100 1000 10000 Collector Current---IC(mA)

100 1 10 100 1000 10000 Collector Current---IC(mA)

Safe Operationg Area


10
PT=1ms

Power Derating Curve


2.5 2 1.5 1 0.5 0

PT=100ms

Power Dissipation---PD(W)

Forward Current---IC(A)

See Note 2 on page 1

See Note 1 on page 1

0.1
PT=1s

0.01 1 10 100 1000 Forward Voltage---VCE(V)


BTD1857AM3

50

100

150

200

Case Temperature---TC()
CYStek Product Specification

CYStech Electronics Corp.


Reel Dimension

Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2012.11.23 Page No. : 4/6

Carrier Tape Dimension

BTD1857AM3

CYStek Product Specification

CYStech Electronics Corp.


Recommended wave soldering condition
Product Pb-free devices Peak Temperature 260 +0/-5 C

Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2012.11.23 Page No. : 5/6

Soldering Time 5 +1/-1 seconds

Recommended temperature profile for IR reflow

Note : All temperatures refer to topside of the package, measured on the package body surface.

Profile feature Average ramp-up rate (Tsmax to Tp) Preheat Temperature Min(TS min) Temperature Max(TS max) Time(ts min to ts max) Time maintained above: Temperature (TL) Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature

Sn-Pb eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds 240 +0/-5 C 10-30 seconds 6C/second max. 6 minutes max.

Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max.

BTD1857AM3

CYStek Product Specification

CYStech Electronics Corp.


SOT-89 Dimension
Marking:
A

Spec. No. : C855M3-R Issued Date : 2004.08.06 Revised Date : 2012.11.23 Page No. : 6/6

month code: 1~9, A,B,C

2
C

3
H

Product Code

Year code : 62006, 72007, HFE rank

D
Style: Pin 1. Base 2. Collector 3. Emitter

E F G

3-Lead SOT-89 Plastic Surface Mounted Package CYStek Package Code: M3

*: Typical

DIM A B C D E

Inches Min. Max. 0.1732 0.1811 0.1594 0.1673 0.0591 0.0663 0.0945 0.1024 0.01417 0.0201

Millimeters Min. Max. 4.40 4.60 4.05 4.25 1.50 1.70 2.40 2.60 0.36 0.51

DIM F G H I

Inches Min. Max. 0.0583 0.0598 0.1165 0.1197 0.0551 0.0630 0.0138 0.0161

Millimeters Min. Max. 1.48 1.527 2.96 3.04 1.40 1.60 0.35 0.41

Notes: 1.Controlling dimension: millimeters.


2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.

Material:
Lead: Pure tin plated. Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0

Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. CYStek reserves the right to make changes to its products without notice. CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.

BTD1857AM3

CYStek Product Specification