Automotive discrete solutions

High quality and innovation

Automotive discrete solutions

Body Control Unit } Low VF (MEGA) Schottky diodes } Low VCEsat (BISS) transistors Airbag control } Low VF (MEGA) Schottky rectifier } Low VCEsat (BISS) transistors } General-purpose transistors } Switching diodes } MOSFETs } TVS and ESD protection diodes } Shunt regulators Interior lighting } Low VF (MEGA) Schottky rectifier

Fuel injection } Power MOSFETS } TVS

Door module } Low VF (MEGA) Schottky rectifier } Low VCEsat (BISS) transistors } Small-signal MOSFETs } General-purpose transistors } ESD protection diodes

ABS module } Low VF (MEGA) Schottky rectifier } Low VCEsat (BISS) transistors } ESD protection diodes Automotive networking }E  SD protection diodes e.g. MMBZ and PESDXCAN-series

Automotive power } TVS diodes } Low VF (MEGA) Schottky diodes } Low VCEsat (BISS) transistors Daylight beam } Low VF (MEGA) Schottky rectifier } Wide range of automotive grade Power MOSFETs: - Steering - Braking / stability - Body control - Engine management - Fan control - Transmission - Water pump

As automotive manufacturers strive for convenient body applications, new safety systems, infotainment systems, and efficient powertrain solutions, the semiconductor content of vehicles is rising and electronic systems are becoming more complex. Consequently, semiconductor suppliers must meet increasingly severe requirements.

Benefit from our experience NXP is the global leader in automotive MOSFETs and a global supplier of small-signal discretes with more than 50 years experience in developing and producing diodes and transistors.
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Automotive trend
More electronics, more power, lower losses

Requirements for discretes

NXP discrete solutions

Power up, losses down

Low VF (MEGA) Schottkys, low VCEsat (BISS) transistors, power and small-signal MOSFETs medium power capability in smallest packages, low power consumption ESD protection portfolio, 1-18 lines, High ESD robustness up to 30 kV, dedicated automotive bus protection Continuous certification program, zero defects breakthrough program, robust, mature technologies and processes

More electronics, thus more ESD-sensitive interfaces

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Increase ESD robustness

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Proven quality standards

Highest product reliability AEC-Q100/101 compliance Long-term supply guarantee

Focus on cost

Integration of functions

Broad range of integrated products: diode arrays, double transistors matched pair transistors, Resistor-equipped transistors (RETs), low VCEsat (BISS) loadswitches

The leading supplier

Combining our expertise in both automotive and discrete solutions, we offer an extensive portfolio of discrete components from small-signal to power. We help automotive system suppliers meet the rigorous and diverse technical demands of automotive electronics by focusing on four key elements high automotive-grade quality, sustainable environment, secure supply and an innovative product portfolio. Quality All our facilities are certified accordingto ISO / TS 16949:2002, and our products are qualified with respect to AEC-Q 100/101 stress test qualification for automotivegrade discrete semiconductors. We offer full support on QS9000 based PPAP documentation, and our Zero Defects Breakthrough Program is part of NXPs excellence approach. The Green Car NXP has enabled innovative breakthroughs that have led to significant efficiency improvements. As the car evolves from the internal combustion engine through micro- and mildhybrids to full electrical vehicles, the only differences in the driving experience for drivers and passengers should be positive. And as an innovative leader in discrete solutions, our semiconductors are helping this happens. Supply Our manufacturing facilities are fully vertically integrated and deliver optimized high-volume production. We offer the highest capacity in the industry for various packages, including SOT23 and LFPAK, and make continuous investments in new capacities. Were safeguarding the long-term availability of our manufacturing processes and products, so our automotive customers can count on a secure supply. Product innovation Product innovation is based on three key innovation drivers: 1) improve power efficiency, 2) offer system protection solutions, and 3) provide miniaturization and integration to simplify design and reduce costs. We lead the way with power-efficient low VCEsat (BISS) transistors and low VF (MEGA) Schottky rectifiers, and have dedicated protection solutions for automotive networking

Package innovations
FlatPower packages
NXPs new FlatPower packages with clip-bond technology meet the demand for thinner products with high power capabilities. Today a range of 28 medium-power, low VF rectifiers and 70 TVS diodes are housed in new SOD123W and SOD128. They offer high power ratings similar to standard SMA/SMB packages but occupy only half of the PCB area.
Package size } Very flat and small packages - SOD128 (3.8 x 2.5 x 1.0 mm) - SOD123W (2.6 x 1.7 x 1.0 mm) Key benefits }H  ighest values for surge and power capability due to clip-bond technology } Low height for economic use of space } AEC-Q101 qualified }P  ad layout compatible with SMA and SMB for easy drop-in replacement } Minimized outline and reflow soldering footprint }N  on-flammability classification UL 94V-0 and RoHS standards compliance (Dark Green) Key applications of TVS diodes } Power supplies / power management } Surge protection } Free wheeling diode for relay coil Key applications of Schottky rectifiers } Power management circuits, especially DC/DC converters } Reverse polarity protection } Free-wheeling diodes for inductive loads in motors and relays

Leadless packages
We offer a very broad range of discrete functions in various leadless packages. Functions include ESD protection, Zener, Switching, and Schottky diodes, low VCEsat (BISS), Resistor-Equipped Transistors (RETs), MOSFET solutions.

Key features and benefits } Broad portfolio, supports all kinds of applications } From 2 pin to 6 pin options } Reduced size enables higher integration for smaller designs }F  rom very small (SOD882D: 1 x 0.6 x 0.37) to medium-power packages with P tot = 1 W (SOT1061 and SOT1118: 2.0 x 2.0 x 0.65) } Broad portfolio with AEC-Q101 qualification } Non-flammability classification UL 94V-0 and RoHS standards compliance (Dark Green) } SOD882D with solderable side pads for improved optical inspection (AOI)
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LFPAK
LFPAK (SOT669) for high-density applications NXP MOSFETs housed in the compact, thermally-enhanced Loss Free PAcKage (LFPAK) are optimized for high-density automotive applications. LFPAK delivers the ultimate combination with ultra-low package resistance, superior reliability and thermal performance. All this in a very small package that ensures you can put power where you need it most, anywhere in the car. In automotive systems space is becoming a key issue, especially under the hood. Todays MOSFETs need to provide the absolute best thermal performance possible to enable switching of loads requiring significant currents. In answer to this, NXP has introduced the LFPAK to ensure a superior level of on-resistance and thermal performance in an extremely compact housing. The combination of NXPs TrenchMOS technology and LFPAK delivers compact power to many applications that previously were limited to only large discrete power packages. The LFPAKs copper source clip design overcomes the limitations of the standard SO8, resulting in thermal resistances comparable to that of bigger packages such as DPAK. In a traditional power package the main thermal pathway is vertically down through the mounting and into the PCB. However, the LFPAK also conducts a significant amount of heat upwards and out through the source lead. Fully qualified to meet the rigorous demands of the AEC-Q101 standard for discrete devices, these new products are aimed at a variety of applications where size, thermal performance and low cost manufacturing processes are critical design considerations. Key benefits } Low inductance } Low thermal resistance } Dimensions comparable to SO8 } Significantly thinner than SO8 & DPAK } Wirebond free - Cu clip design } High current transient robustness } Avalanche Robust up to Tj(max) } 100% avalanche tested } Automotive AEC-Q101 qualified to 175 C } Leads are optical-inspection friendly Target applications for LFPAK products } Engine and transmission controllers } Advanced braking systems } Coolant pumps } DC-DC converters } Reverse battery protection } General-purpose automotive switching where space is at a premium Comparison between typical wirebonds and clip design Package LFPAK DPAK*
*

Lead/Wire Res (m) 0.31 2.21

1 x 300 m bond wire

LFPAK thermal conduction

2 Part Leadframe Chip Plastic

PCB

PCB
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Real-estate benefits of using LFPAK

PCB area reduced by more than 45% LFPAK case temperature is significantly lower than two SO8 packages, and similar to single DPAK (1 W power dissipation on all three packages)

Power MOSFETs
NXP offers a highly flexible approach to power design for automotive systems. NXP is a global leader in the area of discrete power MOSFETs for automotive systems. An in-depth understanding of automotive applications means NXP can deliver power semiconductor solutions from its wide range of standard products or its capability to create unique custom offerings to meet customer specific requirements.

Features and benefits  AEC Q101 compliant  Low conduction losses due to very low on-state resistance  Suitable for logic and standard level gate drive sources  Suitable for thermally demanding environments due to 175 C rating

Applications  12 V automotive systems  Start-Stop micro-hybrid applications  Electric and electro-hydraulic power steering  Motors, lamps and solenoids  Transmission control

Small-signal MOSFETs
Our advanced MOSFET solutions deliver the flexibility and performance that todays market demands. Choose from a wide range of general-purpose MOSFET solutions: The N- and P-channel enhancement mode Field-Effect Transistors (FET) are using Trench MOSFET technology and are offered in various small SMD packages - from SOT23 down to the very small SOT883 (1 x 0.6 x 0.5 mm).
Key features and benefits } AEC-Q101 qualified } Logic-level compatible } Trench MOSFET technology } Including types with ESD protection up to 3 kV } Very fast switching Applications } High-speed line driver } High/Low-side load switch e.g. motion control } Relay driver } Switching circuits } Fuel injection

ESD protection diodes

NXP offers a series of ESD protection diodes specifically designed to protect FlexRay bus, Controller Area Network (CAN) and Local Interconnect Network (LIN) transceivers, as well as other ESD sensitive automotive electronic components. In addition to human body protection according to MIL-STD-883 class 3, these products comply with both IEC 61000-4-2 level 4 (air and contact discharge) as well as IEC 61000-4-5 standards.
Key features  ESD protection up to 30 kV  E xcellent ESD clamping behavior  High peak pulse power (8/20 s) performance  Ultra low leakage current  Low device capacitance Key benefits  Increased system ESD robustness  Optimized protection with low clamping voltages and fast response times  Reduced overall power consumption due to ultra low leakage current  Low device capacitance to avoid unwanted circuit disturbances Key applications  Automotive bus protection  Data and audio interfaces, e.g. car multimedia line protection  Overvoltage protection, e.g. airbag controllers, ABS, ESC  Car drivers interface protection, e.g. dashboard panels

LIN
The PESD1LIN offers best-in-class ESD protection of one LIN bus line. The asymmetrical diode configuration ensures optimized electromagnetic immunity of LIN transceivers.

Key features PESD1LIN  Bidirectional protection of one LIN bus line in a very small SOD323 (SC-76) SMD plastic package  Max. peak pulse power: PPP = 160 W at tp = 8/20 s  Low clamping voltage: V(CL)R = 40 V at IPP = 1 A  Ultra low leakage current: IRM < 1 nA  ESD protection of up to 23 kV
CMASTER/SLAVE

Power Application (e.g. electro motor, inductive loads) Application (e.g. voltage regulator and microcontroller)

LIN Node Connector

CBAT BAT LIN

24 V 15 V

LIN Transceiver

GND

PESD1LIN

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CAN
PESD1CAN and PESD2CAN provide bidirectional protection of two CAN bus lines with one single SOT23 component. They can be used for both high speed and fault-tolerant CAN bus protection.
Key features PESD1CAN  Bidirectional protection of two CAN bus lines in one small SOT23 package  Very low capacitance CD = 11 pF  ESD protection of up to 23 kV Key features PESD2CAN  Bidirectional protection of two CAN bus lines in one small SOT23 package  Max. peak pulse power: PPP = 230 W at tp = 8/20 s  Low clamping voltage: V(CL)R = 34 V at Ipp = 1 A  ESD protection of up to 30 kV
SPLIT CANH CAN BUS TRANSCEIVER CANL
R T/2 R T/2

CAN bus

common mode choke (optional)

2
CG

PESD1CAN PESD2CAN
3
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FlexRay
PESD1FLEX protects advanced FlexRay system solutions supporting the high data rate of 10 Mbits/s.
Key features PESD1FLEX  Bidirectional protection of two FlexRay bus lines in one small SOT23 package  Very low capacitance CD = 11 pF at VR = 0 V, f = 5 MHz  Ultra low leakage current: IRM < 1 nA  ESD protection of up to 23 kV
3 BM FlexRay TRANSCEIVER BP
CG

common mode choke (optional)

RT/2 RT/2

FlexRay bus

PESD1FLEX

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MMBZ series
These device offer single line bidirectional or dual-line unidirectional transient overvoltage protection in a small SOT23 package.
Key features  Common cathode or common anode configuration Max. peak pulse power: Ppp = 40 W at tp = 10/1000 s Ultra-low leakage current: IRM < 1 nA ESD protection of up 30 kV Example MMBZ series application

TVS diodes
Housed in very flat SOD128 or SOD123W packages, these Transient Voltage Suppressor (TVS) diodes save board space while guaranteeing industry-leading surge protection up to 600 W.
Key features and benefits } High Power rating: 400/600 W peak pulse } Small plastic packages SOT23/SOD123W/SOD128 } Very high surge/PCB area ratio }V  ery low reverse leakage current (down to 1 A typical) } Dark Green packages free of halogens and antimony oxides } AEC-Q101 qualified Key applications } Power supplies / power management } Surge protection } Free wheeling diode for relay coil

Low VCEsat (BISS) Transistors

Breakthrough In Small-Signal (BISS) transistors offer best-inclass efficiency, reducing heat generated on your board, thus providing an ideal solution in temperature critical environments. Low VCEsat (BISS) transistors are cost-effective alternatives to medium-power and power transistors. Current capability ranges from 1 8 A in various plastic SMD packages.
VCC

CONTROLLER
MSD923

DC/DC converter

Key features  Reduced thermal and electrical resistance  Low collector-emitter saturation voltage VCEsat down to 30 mV  Up to 8 A collector current capability IC  Up to 20 A peak collector current ICM  High current gain hFE - even at high IC  High performance/board space ratio AEC-Q101 qualified portfolio

Key benefits  Less heat generation, higher circuit efficiency  Solution for high ambient temperature applications  Cost effective replacement of medium power transistors  Increased performance from small-signal discrete footprints

Key applications  Applications in temperature critical environments, e.g. in engine or dashboard mounted components)  High- and low-side switches, e.g. in control units  Medium power DC/DC conversion  Drivers in low supply voltage applications such as fans and motors  Inductive load drivers, e.g. relays, buzzers  MOSFET drivers

Low VF (MEGA) Schottky rectifiers

Maximum Efficiency General Application (MEGA) Schottky rectifiers offer extremely low forward voltage drop during operation, resulting in high efficiency and reduced heat generation. Available in various SMD package options from FlatPower SOD128 to the smallest leadless SOD882D (1 x 0.6 x 0.37 mm).
Key features  Up to 5 A continuous current capability IF  Ultra low forward voltage drop VF  Low reverse current IR  Low power dissipation  Integrated guard ring for stress protection AEC-Q101 qualified portfolio Key benefits  Low losses over the entire current range  Less heat generation and therefore increased reliability  Reduced board space  Increased performance from small-signal discrete footprints Key applications  Power management circuits especially DC/DC conversion  Various rectifier circuits, e.g. in airbag control units  Free wheeling diode for inductive loads in relays and motors  Reverse polarity protection

RETs - Resistor-equipped transistors

NXP offers an extensive portfolio of single and double 100 mA RETs for standard small-signal digital applications. For requirements at higher currents, 500 mA RETs and BISS RETs combine a transistor with two resistors to provide an integrated solution for digital applications in automotive systems, for example control units.
Key features  Transistor and two resistors integrated in one package  Broad 100 mA product range in various packages  500 mA portfolio with several resistor combinations in SOT23 and SOT457 (SC-74)  BISS RET portfolio in SOT23, PBR series  AEC-Q101 qualified  Complete range of Double RET in SOT363/457
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power supply R3 control input R1 R2 Tr2 R4

Tr1 Rload

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High-side switch

Key benefits  Lower handling and inventory costs  Reduced board space  Shorter assembly times and reduced pick-and-place efforts  Simpler design process  Increased system reliability due to fewer soldering joints

Key applications  Digital applications  Switching loads, e.g. for instrument clusters  Controlling IC inputs, e.g. in engine control units

Standard Linear
NXPs portfolio of standard linear devices includes precision shunt-, and linear low drop-out voltage regulators. The TL431 three-terminal shunt regulator family with an output voltage range between Vref = 2.5 V and 36 V, is to be set by two external resistors.

Key features } Programmable output voltage from 2.5 V to 36 V  3 different voltage tolerances down to 0.5%  Typical output impedance of only 0.2  AEC-Q100 (Grade 1) qualified Key applications  Shunt regulator for a wide voltage range  Precision current limiter  Precision constant current sink

Key benefits  Any output voltage in the given range can be set by just two  external resistors  Simple solution to achieve a stabilized voltage 3 versions: extra EMI ruggedness, enhanced stability area, and standard version  Active output circuit for low temperature drift  Low output noise

NXPs portfolio extension in 2011 includes TLVH431, shunt regulator in SOT23 with Vin = 20 V max and VREF = 1.24 V. Voltage regulators in SOT223: NX1117 with max output current of 1A, adjustable from 1.25 V up to 18 V and several fixed output voltage versions 1.2 - 12 V as well as the new automotive LDO NXV426x series.

V+
R1

VOUT

VREF
R2

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TL431 shunt regulator

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2010 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: November 2010 Document order number: 9397 750 17007 Printed in the Netherlands