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Candidates are required to give their answers in their own words as far
as practicable.
All question carry equal marks mark. The marks allotted for each sub-
question is specified along its side. Assume data if necessary.
Answer EIGHT questions.

Q. [1] [a] State and prove the De-Broglies Duality Principle of
Particle and Wave. Explain the result with suitable
examples. [6]
[b] An electron is accelerated through potential difference
of 4KV, Calculate: (i) momentum, (ii) de-Broglies
wavelength, (iii) if position is located with in 0.2m,
what is the percentage of uncertainty in momentum
calculated in (i)?
Q. [2] [a] Explain the concept of effective mass of an electron
inside a crystal. What is the significance of negative
and infinite effective mass? [6]
[b] The width of energy band is typically ~ 10ev calculate:
(i) the density of states at the center of the band, (ii) the
no of states per unit volume within a small energy KT
about the center. [4]
Q. [3] [a] In an experiment, an observer observed that when
temperature is increased, the conductivity of conductor
decreased while that of semiconductor increased. Was
his observation correct? Justify your answer with
proper equations and figures. [6]
[b] A given metal has specified of 8.310
3
kg/m
3
, and
atomic weight of 63.54. The number of valence electron
per atom is 2. The weight of atoms of unit atomic
weight is 1.6610
-27
. The mobility of electron in metal
is 34.8 cm
2
Volt
-1
Sec
-1
.
(i) Compute the conductivity of the metal.
(ii) If an electronic field of 20V/cm is applied across the
metal bar, find the average velocity of free electrons.
Q. [4] [a] Define Magnetization of the Medium. Prove the
statement Magnetization is along the axis of the
specimen and Magnetizing current flows in a plane
perpendicular to Magnetization. [6]
[b] A piece of magnetic material, when placed in magnetic
field of intensity 10
6
Am
-1
has flux density of 1.26T.
What is the magnetization of the material when placed
in a field of intensity 210
6
Am
-1
? [4]
Q. [5] [a] What do you mean by polarization Velocity? Derive the
equation which relates relative permittivity with
electronic polarizability more accurately. [4]
[b] The optical index of refraction and the dielectric
constant for glass are 1.45 and 6.5 respectively.
Calculate the percentage of ionic polarizability. [6]
Q. [6] [a] Distinguish between Hard and Soft Magnetic materials
with suitable examples. [6]
[b] Define relative permeability. Show that M = H (
r
-1),
where symbols have their usual meaning. [4]
Q. [7] [a] Where is the Fermi level position with respect to
intrinsic Fermi level in n type and p type
semiconductor? How Fermi level position changes with
change in concentration of charge carrier in case of
both n and p type? Explain briefly with clear energy
band diagram. [6]
[b] The density of state related effective masses of
electrons and holes in silicon are approximately 1.08me
and 0.56me respectively. The drift mobilities of
electron and hole at room temperature are 1350cm
2
V
-
1
S
-1
respectively. Calculate the resistively of intrinsic
silicon. Take band gap energy to be1.1ev. [4]
Q. [8] [a] Find the expression for depletion width of PN junction. [6]
PURWANCHAL UNIVERSITY
II SEMESTER FINAL EXAMINATION-2008
LEVEL : B. E. (Computer/Electronics & Comm.)
SUBJECT: BEG122EL; Electro Engineering Material.

Full Marks: 80
TIME: 03:00 hrs Pass marks: 32
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[b] A heavily doped P side with acceptor concentration
10
18
cm
-3
is connected to n side with donor
concentration of 10
16
cm
-3
. Calculate the built in
potential. [4]
Q. [9] Write short notes on any TWO: [5+5]
(a) Thermocouple.
(b) Superconductivity.
(c) Ferro-electricity and Piezoelectricity.
(d) Compensation doping.


as practicable.
question is specified along its side.
Attempt any EIGHT questions.

Q. [1] [a] Define wave function? What are the conditions that
should be fulfilled by the wave function? Derive the
time dependent Schrodingers equation. [1+2+4]
[b] Calculate the wavelength of an electron which has been
accelerated through a potential of 500V. [3]
Q. [2] [a] What do you mean by effective mass? Derive the
expression of effective mass? Derive the expression of
effective mass. What does the positive , negative and
infinite effective mass imply? [1+3+2]
[b] Find the temperature at which there is a 2% probability
that a state 0.5eV above the Fermi level will be
occupied by an electron. [4]
Q. [3] [a] Define mobility, conductivity and resistivity.
Differentiate thermal velocity and drift velocity. Derive
the expression for the current density in terms of
conductivity. [3+1+2]
[b] The conductivity of silver is 6.410
-7

-1
m
-1
and the
number of free electrons per unit volume is 5.810
28
m
-
3
. Calculate the drift velocity of the electrons in a silver
wire of length 2m subjected to a potential difference of
40V if the relaxation time is 3.810
-14
sec. [4]
Q. [4] [a] Explain the electrical conduction in gases with suitable
example. Define electrical discharge and electrical
breakdown. [4+2]
[b] Derive the expression : V
d
= E, where is electron
mobility, E is electric field. [4]
Q. [5] [a] Differentiate between diamagnetic, paramagnetic, and
ferromagnetic material by giving two characteristics of
each. Define superconductivity and Meissner effect. [3+1+2]
[b] A magnetic material has a magnetization of 3300 A/m
and flux density of 0.0044 wb/m
2
. Calculate the
magnetizing force and the relative permeability of the
materials. [4]
Q. [6] [a] Define dielectric, dielectric breakdown and dielectric
strength. Describe the dielectric breakdown mechanism.
[1.5+4.5]
[b] Calculate the polarizability of an atom having
r

=1.0024 and n = 2.710
25
m
-3
. [4]
Q. [7] [a] Describe different recombination processes in
semiconductor. How is extrinsic semiconductor charge
neutral? [4+2]
[b] A Si sample is doped with 10
17
As (Arsenic)
atoms/cm
3
. What is the equilibrium hole concentration
at 300k? Where is E
f
relative to E
fi
. [4]
Q. [8] [a] Explain the operation of pn junction in no bias forward
bias and reverse bias with necessary diagrams. [6]
[b] Aluminum is alloyed into an a type Si sample (N
d
=
10
16
cm
-3
). Assuming that the acceptor cm
-3

concentration N
a
= 410
18
cm
-3
. Calculate V
o
and W at
equilibrium (300k). [4]
Q. [9] Write short notes on (any FOUR): [42.5 = 10]
[a] Thermionic Emission and Work Function.
[b] Ionic Conduction in Liquid
[c] Hard and Soft Magnetic Materials.
[d] Extrinsic Semiconductor.

II SEMESTER BACK-PAPER EXAMINATION-2005

Full Marks: 80

as practicable.

Q. [1] [a] Prove that the energy of an electron confined in an
infinite potential well is quantized. [6]
[b] A transmitter type vaccum tube has 2cm long and 2mm
diameter cylindrical Th-on-W cathode. Estimate the
saturation current if the tube is operated at 1000
0
C. The
emission constant and work function for Th-on-W are
310
10
Am
-2
k
-2
and 2.6ev respectively. [4]
Q. [2] [a] How do the metals with different Fermi energy behave,
when they are brought together? [6]
[b] Electrons are accelerated to strike an aluminium crystal
through a potential difference of 150V. What is the de-
Broglies wavelength of this electron? [4]
Q. [3] [a] Explain the concept of effective mass of an electron
inside a crystal. What is the significance of negative
and infinite effective mass? [5]
[b] Sodium has a BCC crystal structure with density of
0.9712 g cm
-3
. Its atomic mass is 22.99 g mol
-1
and the
drift mobilities of electrons in Na-crystal are 53cm
2
v
-1
s
-
1
. Calculate the electrical conductivity of Na. If a
potential difference of 100V is applied across a samples
of Na, 2m long, what is the current density flowing
through the sample. [5]
Q. [4] [a] Explain the breakdown phenomenon in gases. [5]
[b] Consider a Cs Br crystal having One Cs+ Br- ion pair
per unit cell. The lattice parameter of Cs Br crystal is
0.43 nm. If the electronic polarizability of Cs+ is
3.3510
-40
Fm
2
, and dielectric constants at low
frequencies and optical frequencies are 6.4 and 2.76
respectively, find the ionic polarizability of Cs+ Br
-

pair. [5]

Q. [5] [a] Derive the Clausius Mossotti Equation relating
polarizability with the relative permittivity. [4]
[b] A piezoelectric sample is in the form of a cylinder of
dimension 10mm long and 3mm diameter. The
piezoelectric coefficient of the sample is 25010
-12
m v
-
1
, and has a dielectric constant of 1000. The sample is
placed in air medium with a breakdown voltage of
about 3.5KV. What is the force required to breakdown
the air medium resulting in a spark. [6]
Q. [6] [a] What is hysteresis? Explain the significance of
hysteresis loop in magnetic materials. [6]
[b] A piece of magnetic materials, when placed in magnetic
field of intensity 10
6
Am
-1
has flux density of 1.26T.
What is the magnetization of the material when placed
in a field of intensity 210
6
Am
-1
? [4]
Q. [7] [a] What is the impact of temperate on the nobilities of
charge carrier in semiconductors. [5]
[b] The density of state related effective masses of
electrons and holes in silicon are approximately 1.08m
e

and 0.56m
e
respectively. The drift mobilities of electron
and hole at room temperature are 1350 cm
2
V
-1
s
-1
and
450cm
2
V
-1
s
-1
respectively. Calculate the resistivity of
intrinsic silicon. Take bond gap energy to be 1.1eV. [5]
Q. [8] [a] Explain with the energy band diagram the forward and
reverse biased pn junction. [6]
[b] A heavy doped p-side with an accepter concentration of
10
18
cm
-3
is connected to n-side with donor
concentration of 10
16
cm
-3
. Calculate the built in

Full Marks: 80
potential depletion width at room temperature .
[intrinsic concentration = 1.45 10
10
cm
-3
]
Q. [9] Write short notes on: [42.5=10]
[a] Tunnelling
[b] Extrinsic semiconductors.
[c] Ferromagnetic Materials.
[d] Fermi Dirac Statistics.


as practicable.

Q. [1] [a] What is free electron theory at metal? Show that energy
of a free electron in a metal is E = h
2
k
2
/8
2
m where, h
is planks constant and k is wave number. [2+4]
[b] Calculate the three lowest energy levels for an electron
trapped in one dimensional potential well of length
0.1nm cube. [4]
Q. [2] [a] What is thermionic emission? Explain with the help of
Richardson-Duchman equation the dependency of
thermionic current density of a metal with the work
function and temperature . [2+4]
[b] Calculate the Fermi energy E
fo
at 0
0
k for the conduction
electron in copper. The density of copper is 8.96 gm
cm
3
and relative atomic mass is 63.5 gm mole
-1
.
Q. [3] [a] What do you understand by drift velocity of an
electron? Establish a relation j = E for the conduction
of conductivity subjected to an electric field intensity
E. [2+4]
[b] The following data are obtained by measurement on
gold:
Density 19.32 gm/cc
Resistivity: 2.4210
6
Ohm cm
Atomic weight: 197.2 gm/mole
Calculate the mobility of electron in gold. Assume that
each gold atom contributes exactly one conduction
electron. [4]
Q. [4] [a] Explain the mechanism of ionic conduction in
electrolytes. Also derive an expression for the ionic
conductivity of the electrolyte. [6]
[b] When a voltage different of 3V is applied across a
10cm long copper wire, electrons are found to drift at
10
4
ms
-1
. Find the mean free path for the electron
random motion in copper under these conditions. [4]
Q. [5] [a] Define the term critical magnetic field and critical
temperature in superconductor. What is Meissner effect
in super conductor? [3+3]
[b] The magnetic field strength in a piece of copper is 10
6

A/m. Given that the magnetic susceptibility of copper
is -0.510
6
, find the magnetic flux density and the
magnetization in copper. Also find out the relative
permeability of copper. [4]
Q. [6] [a] What is polarization and polarization vector of
dielectric? Derive an expression for the dielectric
constant of dielectric as
r
= 1+
e
N
e
/
o
where,
e
is
electronic polarisabilty and N
e
and the number of
molecules per unit volume of dielectric. [3+3]
[b] Calculate the heat generated per second due to
dielectric loss per cm
3
of cross-linked polythene
(XLPE) at 60Hz at a field of 100 KV cm
-1
. The
dielectric constant for XLPE is 2.3 and loss tangent is
310
-4
. [4]
Q. [7] [a] What is the difference between intrinsic semiconductor
and extrinsic semiconductor? Show that in an intrinsic
semiconductor, the fermi level lies midway between the
conduction band and valance band. [2+4]
[b] An n type Silicon semiconductor containing 10
16

phosphorous (donor) atoms cm
-3
has been doped with
10
17
Boron (acceptor) atoms cm
-3
. Calculate the
electron and hole concentration in this semiconductor.
II SEMESTER BACK-PAPER EXAMINATION-2004

Full Marks: 80
Given that the intrinsic concentration of semiconductor
is n
i
= 1.4510
10
cm
-3
at room temperature. [4]
Q. [8] [a] What is pn junction? What happens when pn junction is
biased in [i] forward direction and [ii] backward
direction? [2+4]
[b] A pure germanium specimen has a density of charge
carriers of 2.510
19
m
-3
. It is doped with donor impurity
atoms at the rate of one impurity atom for every 10
6

atoms of germanium. All the impurities may be
supposed to be ionized. The density of germanium
atoms is 4.210
28
atom/m
3
. Find the resistivity of doped
germanium if the electron mobility is 0.36m
2
v
-1
s
-1
. [4]

Q. [9] Write short notes on [any FOUR]: [42.5=10]
[a] Contact potential
[b] Magnetic domain and Domain wall.
[c] Dielectric constant and dielectric strength.
[d] Electron mobility and electron conductivity.
[e] Majority and minority carrier in semiconductors.


as practicable.

Q. [1] [a] Define wave function. What are the condition that
should be fulfilled by the wave function? Derive the
time dependent Schrodingers equation. [1+2+4]
[b] Calculate the wavelength of an electron, which has
been accelerated through a potential of 500V. [3]
Q. [2] [a] What do you mean by effective mass? Derive the
expression of effective mass of an electron in a crystal.
What does positive , negative and infinite effective
mass imply? [1+3+2]
[b] Find the temperate at which there is a 2% probability
that a state of 0.5 eV above the Fermi level will be
occupied by an electron. [4]
Q. [3] [a] Define mobility, conductivity and resistivity.
Differentiate thermal velocity and drift velocity. Derive
an expression for the current density in terms of
conductivity. [3+1+2]
[b] A conductor material has a free electron density of 10
24

electron per m
3
. When a voltage is applied , a constant
drift velocity of 1.510
-2
m/s is attained by the
electrons. If the cross-sectional area of the material is 1
cm
2
, calculate the magnitude of current. [4]
Q. [4] [a] Explain the electrical conduction in gases with suitable
example. Define electrical discharge and electrical
breakdown. [4+2]
[b] What is diffusion? Establish the Einsteins relationship
between mobility and diffusion constant. [4]
Q. [5] [a] Differentiate between diamagnetic , paramagnetic and
ferromagnetic material giving two characteristics of
each. Define superconductivity and Meissner effect. [3+1+2]
[b] A magnetic matrials has magnetization of 3300 A/m ad
flux density of 0.0044 wb/m
2
. Calculate the
magnetization force and relative permeability of the
material. [4]
Q. [6] [a] Define dielectric strength and dielectric breakdown.
Describe the dielectric breakdown and partial discharge
mechanism in gases. [2+4]
[b] Calculate the polarizability of an atom having
r
=
1.0024 and n =2.710
25
m
-3
. [4]
Q. [7] [a] What do you mean by carrier life-time? Deduce the
continuity equation for the concentration of mobile
carriers in any elementary volume of the
semiconductor. [1+4]
[b] Explain the mechanism of the formation of p-n
junction. What do you mean by forward biasing and
reverse biasing of p-n junction? [3+2]
Q. [8] [a] Describe different recombination processes in
semiconductor. Explain the effect of temperature in
extrinsic Semiconductor. [4+2]
[b] A Si sample is doped with 1017 As (Arsenic )
atoms/cm
3
. What is the equilibrium hole concentration
at 300K? Where is E
f
relative to E
fi
? [4]
Q. Write short notes on : [42.5=10]
[a] Thermoionic emission and work function.
[b] Hard and soft magnetic material.
[c] Dielectric loss.
[d] Ferro-electricity and Piezoelectricity.

Full Marks: 80

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