Parameter Max.

Units
V
CES
Collector-to-Emitter Breakdown Voltage 250 V
I
C
@ T
C
= 25C Continuous Collector Current 98*
I
C
@ T
C
= 100C Continuous Collector Current 55 A
I
CM
Pulsed Collector Current Q 196
I
LM
Clamped Inductive Load Current R 196
V
GE
Gate-to-Emitter Voltage 20 V
E
ARV
Reverse Voltage Avalanche Energy S 160 mJ
P
D
@ T
C
= 25C Maximum Power Dissipation 200
P
D
@ T
C
= 100C Maximum Power Dissipation 78
T
J
Operating Junction and -55 to + 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (0.063 in. (1.6mm) from case )
C
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)
IRG4P254S
lNSULATED GATE 8lPCLAP TPANSlSTCP
PD -T5TA
Parameter Typ. Max. Units
R
JC
Junction-to-Case 0.64
R
CS
Case-to-Sink, Flat, Greased Surface 0.24 C/W
R
JA
Junction-to-Ambient, typical socket mount 40
Wt Weight 6.0 (0.21) g (oz)
Thermal Resistance
Absolute Maximum Ratings
W
E
C
G
n-channel
TO-247AC
Features Features Features Features Features
Standard: Optimized for minimum saturation
voltage and operating frequencies up to 10kHz
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
High Power density
Lower conduction losses than similarly rated MOSFET
Lower Gate Charge than equivalent MOSFET
Simple Gate Drive characteristics compared to Thyristors
Benefits
V
CES
= 250V
V
CE(on) typ.
= 1.32V
@V
GE
= 15V, I
C
= 55A
4/15/2000
Standard Speed IGBT
* Package limited to 70A
www.irf.com 1
IRG4P254S
2 www.irf.com
Parameter Min. Typ. Max. Units Conditions
Q
g
Total Gate Charge (turn-on) 200 300 I
C
=55A
Q
ge
Gate - Emitter Charge (turn-on) 29 44 nC V
CC
= 200V See Fig. 8
Q
gc
Gate - Collector Charge (turn-on) 66 99 V
GE
= 15V
t
d(on)
Turn-On Delay Time 40
t
r
Rise Time 44 T
J
= 25C
t
d(off)
Turn-Off Delay Time 270 400 I
C
= 55A, V
CC
= 200V
t
f
Fall Time 510 760 V
GE
= 15V, R
G
= 5.0
E
on
Turn-On Switching Loss 0.38 Energy losses include "tail"
E
off
Turn-Off Switching Loss 3.50 mJ See Fig. 9, 10, 14
E
ts
Total Switching Loss 3.88 5.3
t
d(on)
Turn-On Delay Time 38 T
J
= 150C,
t
r
Rise Time 45 I
C
= 55A, V
CC
= 200V
t
d(off)
Turn-Off Delay Time 400 V
GE
= 15V, R
G
= 5.0
t
f
Fall Time 940 Energy losses include "tail"
E
ts
Total Switching Loss 6.52 mJ See Fig. 11, 14
L
E
Internal Emitter Inductance 13 nH Measured 5mm from package
C
ies
Input Capacitance 4500 V
GE
= 0V
C
oes
Output Capacitance 510 pF V
CC
= 30V See Fig. 7
C
res
Reverse Transfer Capacitance 100 = 1.0MHz
Parameter Min. Typ. Max. Units Conditions
V
(BR)CES
Collector-to-Emitter Breakdown Voltage 250 V V
GE
= 0V, I
C
= 250A
V
(BR)ECS
Emitter-to-Collector Breakdown Voltage T 18 V V
GE
= 0V, I
C
= 1.0A
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage 0.33 V/C V
GE
= 0V, I
C
= 1.0mA
1.32 1.5 I
C
= 55A V
GE
= 15V
V
CE(ON)
Collector-to-Emitter Saturation Voltage 1.69 I
C
=98A See Fig.2, 5
1.31 I
C
=55A , T
J
= 150C
V
GE(th)
Gate Threshold Voltage 3.0 6.0 V
CE
= V
GE
, I
C
= 250A
V
GE(th)
/T
J
Temperature Coeff. of Threshold Voltage -12 mV/C V
CE
= V
GE
, I
C
= 250A
g
fe
Forward Transconductance U 43 63 S V
CE
= 100V, I
C
= 55A
250 V
GE
= 0V, V
CE
= 250V
2.0 V
GE
= 0V, V
CE
= 10V, T
J
= 25C
1000 V
GE
= 0V, V
CE
= 250V, T
J
= 150C
I
GES
Gate-to-Emitter Leakage Current 100 nA V
GE
= 20V
Electrical Characteristics @ T
J
= 25C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
A
Switching Characteristics @ T
J
= 25C (unless otherwise specified)
ns
ns
T Pulse width 80s; duty factor 0.1%.
U Pulse width 5.0s, single shot.
Notes:
Q Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10H, R
G
= 5.0,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
junction temperature.
IRG4P254S
www.irf.com 3
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
RMS
of fundamental)
Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics
1
10
100
1000
5 6 7 8 9 10
V , Gate-to-Emitter Voltage (V)
I



,


C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r

C
u
r
r
e
n
t

(
A
)
GE
C
V = 50V
5s PULSE WIDTH
CC
T = 25 C
J
o
T = 150 C
J
o
0
20
40
60
80
100
120
0. 1 1 10 100
f, Frequency (kHz)
A
6 0% o f ra t ed
vol t age
I
Ideal diodes
Sq uare wave:
F or both:
Dut y cycl e: 50%
T = 125C
T = 90C
Gate dri ve as speci fi ed
sink
J
Pow er D i s s ip at i on = 4 0W
Triangul ar wave:
I
C l am p vo lt age:
80 % of rat e d
L
o
a
d

C
u
r
r
e
n
t

(

A

)
1
10
100
1000
0.1 1 10
V , Collector-to-Emitter Voltage (V)
I



,


C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r

C
u
r
r
e
n
t

(
A
)
CE
C
V = 15V
20s PULSE WIDTH
GE
T = 25 C
J
o
T = 150 C
J
o
IRG4P254S
4 www.irf.com
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs. Case
Temperature
25 50 75 100 125 150
0
20
40
60
80
100
T , Case Temperature ( C)
M
a
x
i
m
u
m

D
C

C
o
l
l
e
c
t
o
r

C
u
r
r
e
n
t
(
A
)
C

0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
Notes:
1. Duty factor D =t / t
2. Peak T =P x Z + T
1 2
J DM thJC C
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
T
h
e
r
m
a
l

R
e
s
p
o
n
s
e

(
Z








)
1
t
h
J
C
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
-60 -40 -20 0 20 40 60 80 100 120 140 160
1.0
2.0
3.0
T , Junction Temperature ( C)
V





,

C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r

V
o
l
t
a
g
e
(
V
)
J

C
E
V = 15V
80 us PULSE WIDTH
GE
I = A 27.5
C
I = A 55
C
I = A 110
C
CURRENT LIMITED BY THE PACKAGE
IRG4P254S
www.irf.com 5
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
R
G
, Gate Resistance ( )
1 10 100
0
2000
4000
6000
8000
V , Collector-to-Emitter Voltage (V)
C
,

C
a
p
a
c
i
t
a
n
c
e

(
p
F
)
CE
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GE
ies ge gc , ce
res gc
oes ce gc
C
ies
C
oes
C
res
0 40 80 120 160 200
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V





,

G
a
t
e
-
t
o
-
E
m
i
t
t
e
r

V
o
l
t
a
g
e

(
V
)
G
G
E
V = 200V
I = 55A
CC
C
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.1
1
10
100
T , Junction Temperature ( C )
T
o
t
a
l

S
w
i
t
c
h
i
n
g

L
o
s
s
e
s

(
m
J
)
J

R = 5Ohm
V = 15V
V = 200V
G
GE
CC
I = A 110
C
I = A 55
C
I = A 27.5 C
0 10 20 30 40 50
3.0
4.0
5.0
R , Gate Resistance (Ohm)
T
o
t
a
l

S
w
i
t
c
h
i
n
g

L
o
s
s
e
s

(
m
J
)
G
V = 200V
V = 15V
T = 25 C
I = 55A
CC
GE
J
C

R
G
, Gate Resistance ( )
5.0
IRG4P254S
6 www.irf.com
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
0 20 40 60 80 100 120
0
5
10
15
20
I , Collector-to-emitter Current (A)
T
o
t
a
l

S
w
i
t
c
h
i
n
g

L
o
s
s
e
s

(
m
J
)
C
R = 5Ohm
T = 150 C
V = 200V
V = 15V
G
J
CC
GE

5.0
10
100
1000
1 10 100 1000
V = 20V
T = 125 C
GE
J
o
V , Collector-to-Emitter Voltage (V)
I



,


C
o
l
l
e
c
t
o
r
-
t
o
-
E
m
i
t
t
e
r

C
u
r
r
e
n
t

(
A
)
CE
C
SAFE OPERATING AREA
IRG4P254S
www.irf.com 7
200V
4 X IC@25C
D.U.T.
50V
L
V *
C
Q
R
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated I d.
1000V
Fig. 13a - Clamped Inductive
Load Test Circuit
Fig. 13b - Pulsed Collector
Current Test Circuit
480F
960V
0 - 200V
R
L
=



t=5s d(o n )
t
t
f t r
90%
t
d (of f)
10%
90%
10%
5%
V
C
I
C
E
o n
Eo f f
ts o n o ff
E = (E +E )
Q
R
S
Fig. 14b - Switching Loss
Waveforms
50V
Driver*
1000V
D.U.T.
I
C
C
V
Q
R S
L
Fig. 14a - Switching Loss
Test Circuit
* Driver same type
as D.U.T., VC = 200V
IRG4P254S
8 www.irf.com
Case Outline and Dimensions TO-247AC
Dime n si on s i n Mi ll ime t e rs a n d (I n ch es )
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
- D -
5 .30 ( .20 9)
4 .70 ( .18 5)
3. 65 ( .1 43 )
3. 55 ( .1 40 )
2.50 ( . 089)
1.50 ( . 059)
4
3X
0.80 ( .03 1)
0.40 ( .01 6)
2 .60 ( .10 2)
2 .20 ( .08 7)
3. 40 ( .1 3 3)
3. 00 ( .1 1 8)
3 X
0.25 ( . 010) M C A S
4.30 ( .1 70)
3.70 ( .1 45)
- C -
2X
5.5 0 ( .2 17)
4.5 0 ( .1 77)
5.5 0 ( .2 17)
0. 25 ( .01 0)
1.40 ( . 056)
1.00 ( . 039)
D M M B
- A -
15 .90 ( .6 26)
15 .30 ( .6 02)
- B -
1 2 3
20 .30 (.8 00)
19 .70 (.7 75)
14 .80 ( . 583 )
14 .20 ( . 559 )
2. 40 ( .094)
2. 00 ( .079)
2 X
2 X
5. 45 ( .2 15 )
*
NOTES:
1 DIMENSIONS & T OLERANCING
PER ANSI Y14.5M, 1982.
2 CONTR OLLIN G DIMENSION : INCH.
3 DIMENSIONS ARE SHOW N
MILLIMETER S (IN CHES).
4 CONFORMS TO JEDEC OUTLINE
T O-247AC .
LEAD ASSIGNMENT S
1 - GAT E
2 - COLLECTOR
3 - EMIT TER
4 - COLLECTOR
*
LONGER LEADED (20m m)
VERSION AVAILABLE ( TO- 247AD)
T O ORDER ADD "-E" SU FF IX
T O PART NUMBER
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 4/2000