Transistor and Amplier Formulas

The following formulas are meant as a reminder of the fundamentals given in most standard electronics text books. Notation for the formulas have the traditional meanings. Depletion capacitances are all given with a negative sign in the denominator as in C = C0 /(1 V /) . Consequently, when the junction is reverse biased, the minus sign turns into a positive sign. Figure F.1 presents the basic FET features and symbols. Bipolar Transistor Parameters (BJT)

Description Collector current Transconductance Input resistance Output resistance Base charging capacitance Emitter base junction Input capacitance Collector base

Formula IC = IS exp qIC kT 0 r = gm VA ro = IC CD = F gm gm = q NB Cje = AE Vj C = CD + Cje Co C = 1/3 1 VBC oc Ccso Ccs = 1/2 1 Vsc os gm 1 fT = 2 (C + C ) kT VT = = 0.259V q
1/3

qVBE kT

Collector substrate

Transition frequency Thermal voltage

Junction Field Eect Transistor Parameters (JFET)

Description Saturated drain current

Formula VGS VDS ID = IDSS 1 1 VP VA VDS VGS VP 3 (0 + VGS VDS )3/2 (0 + VGS )3/2 ID = Go VDS + 2 (0 + VP )1/2 VDS < VGS VP 2aW G0 = c L 2 ID K 2(VGS VP )VDS VDS gm =
2

Ohmic region drain current

Transconductance Output resistance Gate source capacitance

VGS 2IDSS 1 VP VP VA ro = ID Cgs0 Cgs = 1/3 GS 1 V 0 Cgd = Cgd0 1

VGD 0 1/3

Gate drain capacitance

Gate substrate capacitance N Channel JFET P Channel JFET

Cgss = VP < 0 VP > 0

Cgss0 1
VGSS 0 1/2

Metal Oxide Semiconductor Field Eect Transistor Parameters (MOSFET) Description Saturation region drain current Formula Cox W VDS ID = (VGS Vt )2 1 2L VA VDS VGS Vt Cox W 2 ID = 2(VGS Vt )VDS VDS 2L VDS < VGS Vt Cox =
ox

Ohmic region drain current

VDS VA

Oxide capacitance Transconductance Output resistance Input capacitance Transition frequency Surface mobility Holes Surface mobility Electrons N Channel JFET IDSS > 0 VP < 0 IDSS gmo = 2V P
K = IDSS >0 V2
P

tox W (VGS Vt ) L

gm = Cox ro =

|VA | ID 0 Cin = CGS + CGD = Cox LW gm s (VGS Vt ) fc = = 2Cin 2L2 s = 200 cm2 /(V sec) s = 450 cm2 /(V sec) P Channel JFET IDSS < 0 VP > 0 2IDSS gmo = VP IDSS K= 2 < 0 VP VGS < VP for |IDS | > 0 PMOS Enhancement Vt < 0

VP < VGS

NMOS Enhancement Vt > 0 VGS > Vt Cox W K = n 2L >0 NMOS Depletion

for |IDS | > 0

VGS < Vt p Cox W <0 K= 2L PMOS Depletion Vt > 0 VGS < Vt for |IDS | p Cox W <0 K= 2L 3

Vt < 0 VGS > Vt < 0 for |IDS | > 0 K=

n Cox W >0 2L