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RDS(on) 35m
Ilim 25A
VCC 36 V
CMOS COMPATIBLE INPUTS PROPORTIONAL LOAD CURRENT SENSE I UNDERVOLTAGE AND OVERVOLTAGEn SHUT-DOWN I OVERVOLTAGE CLAMP I THERMAL SHUT DOWN I CURRENT LIMITATION I VERY LOW STAND-BY POWER DISSIPATION I PROTECTION AGAINST: n LOSS OF GROUND AND LOSS OF VCC I REVERSE BATTERY PROTECTION (*) DESCRIPTION The VND600 is a monolithic device made using STMicroelectronics VIPower M0-3 technology. It is intended for driving resistive or inductive loads with one side connected to ground. Active VCC pin voltage clamp protects the device against low energy spikes (see ISO7637 transient BLOCK DIAGRAM
SO-16L
compatibility table). This device has two channels in high side configuration; each channel has an analog sense output on which the sensing current is proportional (according to a known ratio) to the corresponding load current. Built-in thermal shutdown and outputs current limitation protect the chip from over temperature and short circuit. Device turns off in case of ground pin disconnection.
VCC
OUTPUT 1
PwCLAMP 2
Ot1
OVERTEMP. 1 OVERTEMP. 2
Ot2
CURRENT SENSE 2
October 2002
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VND600
ABSOLUTE MAXIMUM RATING
Symbol VCC -VCC - IGND IOUT IR IIN Parameter DC supply voltage Reverse supply voltage DC reverse ground pin current Output current Reverse output current Input current Electrostatic Discharge (Human Body Model: R=1.5K; C=100pF) - INPUT VESD - CURRENT SENSE - OUTPUT - VCC Maximum Switching Energy (L=0.12mH; RL=0; Vbat=13.5V; Tjstart=150C; IL=40A) Power dissipation at Tc=25C Junction operating temperature Case operating temperature Storage temperature Value 41 -0.3 -200 Internally limited -21 +/- 10 4000 2000 5000 5000 136 8.3 Internally limited -40 to 150 -55 to 150 Unit V V mA A A mA V V V V mJ W C C C
16
VCC
IS VCC IIN1 INPUT1 VIN1 IIN2 VIN2 INPUT2 IOUT1 OUTPUT1 ISENSE1 IOUT2 OUTPUT2 VSENSE1 VOUT1 VCC
CURRENT SENSE 1
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VND600
THERMAL DATA
Symbol Rthj-lead Rthj-amb Parameter Thermal resistance junction-lead Thermal resistance junction-ambient (MAX) (MAX) Value 15 65 (*) Unit C/W C/W
(*) When mounted on a standard single-sided FR-4 board with 0.5cm2 of Cu (at least 35m thick). Horizontal mounting and no artificial air flow.
ELECTRICAL CHARACTERISTICS (8V<VCC<36V; -40C<Tj<150C; unless otherwise specified) (Per each channel) POWER
Symbol VCC (**) VUSD (**) VOV (**) RON Vclamp Parameter Operating supply voltage Undervoltage shutdown Overvoltage shutdown On state resistance Clamp voltage Test Conditions Min 5.5 3 36 Typ 13 4 Max 36 5.5 35 70 41 48 12 12 120 55 40 25 6 50 0 5 3 Unit V V V m m m V A A mA A A A A
IOUT=5A; Tj=25C IOUT=5A; Tj=150C IOUT=3A; VCC=6V ICC=20 mA (see note 1) Off State; VCC=13V; VIN=VOUT=0V IS (**) Supply current Off State; VCC=13V; VIN=VOUT=0V; Tj=25C On state; VIN=5V; VCC=13V; IOUT=0A; RSENSE=3.9k VIN=VOUT=0V VIN=0V; VOUT=3.5V VIN=VOUT=0V; Vcc=13V; Tj =125C VIN=VOUT=0V; Vcc=13V; Tj =25C 0 -75
Off state output current Off State Output Current Off State Output Current Off State Output Current
SWITCHING (VCC=13V)
Symbol td(on) td(off) Parameter Turn-on delay time Turn-on delay time Test Conditions RL=2.6 (see figure 1) RL=2.6 (see figure 1) RL=2.6 (see figure 1) RL=2.6 (see figure 1) Min Typ 30 30 See relative diagram See relative diagram Max Unit s s V/s V/s
PROTECTIONS
Symbol Ilim TTSD TR THYST Vdemag VON
(**) Per device.
Parameter DC short circuit current Thermal shut-down temperature Thermal reset temperature Thermal hysteresis Turn-off output voltage clamp Output voltage drop limitation VCC=13V
Min 25
Typ 40
Max 70 70
Unit A A C C
175
200
15
C V mV
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VND600
ELECTRICAL CHARACTERISTICS (continued) CURRENT SENSE (9VVCC16V) (See fig. 1)
Symbol K1 dK1/K1 K2 dK2/K2 K3 dK3/K3 VSENSE1,2 VSENSEH Parameter IOUT/ISENSE Current Sense Ratio Drift Test Conditions IOUT1 or IOUT2=0.5A; VSENSE=0.5V; other channels open; Tj= -40C...150C IOUT1 or IOUT2=0.5A; VSENSE=0.5V; other channels open; Tj= -40C...150C IOUT1 or IOUT2=5A; VSENSE=4V; other channels open; Tj=-40C Tj=25C...150C Current Sense Ratio Drift IOUT1 or IOUT2=5A; VSENSE=4V; other channels open; Tj=-40C...150C IOUT1 or IOUT2=15A; VSENSE=4V; other channels open; Tj=-40C Tj=25C...150C Current Sense Ratio Drift Max analog sense output voltage Analog sense output voltage in overtemperature condition Analog Sense Output Impedance in Overtemperature Condition Current sense delay response IOUT1 or IOUT2=15A; VSENSE=4V; other channels open; Tj=-40C...150C VCC=5.5V; IOUT1,2=2.5A; RSENSE=10k VCC>8V, IOUT1,2=5A; RSENSE=10k VCC=13V; RSENSE=3.9k Min 3300 -10 Typ 4400 Max 6000 +10 % Unit
IOUT/ISENSE
4200 4400 -6
4900 4900
6000 5750 +6 %
IOUT/ISENSE
4200 4400 -6 2 4
4900 4900
5500 5250 +6 % V V
5.5
RVSENSEH tDSENSE
400 500
Note 1: V clamp and VOV are correlated. Typical difference is 5V. Note 2: current sense signal delay after positive input slope. Note: Sense pin doesnt have to be left floating.
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VND600
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VND600
I C C C C C C
IV C C C C C E
CONTENTS All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device is not performed as designed after exposure to disturbance and cannot be returned to proper operation without replacing the device.
INPUT
tDSENSE
t td(off)
td(on)
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VND600
Figure 2: Waveforms
NORMAL OPERATION INPUTn LOAD CURRENTn SENSEn UNDERVOLTAGE VCC INPUTn LOAD CURRENTn SENSEn OVERVOLTAGE
VOV VUSD VUSDhyst
<Nominal
<Nominal
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VND600
APPLICATION SCHEMATIC
+5V
Rprot INPUT1
VCC
Dld
Rprot Rprot
OUTPUT1
Rprot
RSENSE1
RSENSE2
VGND
RGND
DGND
NETWORK
AGAINST
Solution 1: Resistor in the ground line (RGND only). This can be used with any type of load. The following is an indication on how to dimension the RGND resistor. 1) RGND 600mV / IS(on)max. 2) RGND (VCC) / (-IGND) where -IGND is the DC reverse ground pin current and can be found in the absolute maximum rating section of the devices datasheet. Power Dissipation in RGND (when VCC<0: during reverse battery situations) is: PD= (-VCC)2/RGND This resistor can be shared amongst several different HSD. Please note that the value of this resistor should be calculated with formula (1) where IS(on)max becomes the sum of the maximum on-state currents of the different devices. Please note that if the microprocessor ground is not common with the device ground then the RGND will produce a shift (IS(on)max * RGND) in the input thresholds and the status output values. This shift will vary depending on how many devices are ON in the case of several high side drivers sharing the same RGND.
If the calculated power dissipation leads to a large resistor or several devices have to share the same resistor then the ST suggests to utilize Solution 2 (see below). Solution 2: A diode (DGND) in the ground line. A resistor (RGND=1k) should be inserted in parallel to DGND if the device will be driving an inductive load. This small signal diode can be safely shared amongst several different HSDs. Also in this case, the presence of the ground network will produce a shift (j600mV) in the input thresholds and the status output values if the microprocessor ground is not common with the device ground. This shift will not vary if more than one HSD shares the same diode/resistor network.
C I/Os PROTECTION:
If a ground protection network is used and negative transient are present on the VCC line, the control pins will be pulled negative. ST suggests to insert a resistor (Rprot ) in line to prevent the C I/Os pins to latch-up. The value of these resistors is a compromise between the leakage current of C and the current required by the
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VND600
HSD I/Os (Input levels compatibility) with the latch-up limit of C I/Os. -VCCpeak/Ilatchup Rprot (VOHC-VIH-VGND) / IIHmax
Calculation example: For VCCpeak= - 100V and Ilatchup 20mA; VOHC 4.5V 5k Rprot 65k. Recommended Rprot value is 10k.
6500 6000
max.Tj=-40C
5500
max.Tj=25...150C
min.Tj=-40C
8
IOUT (A)
10
12
14
16
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VND600
Vin=3.25V
4 3.5 3 2.5 2 1.5 1 0.5 0 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
Iin=1mA
7.6 7.4 7.2 7 6.8 6.6
6.4 6.2 6 -50 -25 0 25 50 75 100 125 150 175 2.2 2 -50 -25 0 25 50 75 100 125 150 175
Tc (C)
Tc (C)
Tc (C)
Tc (C)
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VND600
Overvoltage Shutdown
Vov (V)
50 48 46
ILIM Vs Tcase
Ilim (A)
80 70
Vcc=13V
60
44 42 40 38 36 20 34 32 30 -50 -25 0 25 50 75 100 125 150 175 10 0 -50 -25 0 25 50 75 100 125 150 175 50 40 30
Tc (C)
Tc (C)
Vcc=13V Rl=2.6Ohm
Vcc=13V Rl=2.6Ohm
-25
25
50
75
100
125
150
175
Tc (C)
Tc (C)
Iout=5A
60 50 40 30 20
Tc= 150C
Tc= 25C
Tc= - 40C
10 0 5 10 15 20 25 30 35 40
Tc (C)
Vcc (V)
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VND600
A B C
10
1 0.01
0.1
1 L(mH )
10
100
A = Single Pulse at TJstart=150C B= Repetitive pulse at TJstart=100C C= Repetitive Pulse at TJstart=125C Conditions: VCC=13.5V Values are generated with RL=0 In case of repetitive pulses, Tjstart (at beginning of each demagnetization) of every pulse must not exceed the temperature specified above for curves B and C. VIN, IL Demagnetization Demagnetization Demagnetization
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VND600
Layout condition of Rth and Zth measurements (PCB FR4 area= 41mm x 48mm, PCB thickness=2mm, Cu thickness=35m, Copper areas: 0.5cm2, 6cm2).
70 65 60 55 50 45 40
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VND600
ZT H (C/W) 1000
100
Footprint 6 cm2
10
0.1
Z TH = R TH + ZTHtp ( 1 )
where
= tp T
Footprint 0.05 0.3 2.2 12 15 37 0.001 5.00E-03 0.02 0.3 1 3 6
Thermal Parameter
Tj_1
Pd1 C1 C2
C1
C2
C3
C4
C5
C6
R1
R2
R3
R4
R5
R6
Tj_2
R1 Pd2
R2
T_amb
Area/island (cm2) R1 (C/W) R2 (C/W) R3 ( C/W) R4 (C/W) R5 (C/W) R6 (C/W) C1 (W.s/C) C2 (W.s/C) C3 (W.s/C) C4 (W.s/C) C5 (W.s/C) C6 (W.s/C)
22
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VND600
SO-16L TUBE SHIPMENT (no suffix) Base Q.ty Bulk Q.ty Tube length ( 0.5) A B C ( 0.1)
All dimensions are in mm.
A
C B
TAPE DIMENSIONS
According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb 1986 Tape width Tape Hole Spacing Component Spacing Hole Diameter Hole Diameter Hole Position Compartment Depth Hole Spacing W P0 ( 0.1) P D ( 0.1/-0) D1 (min) F ( 0.05) K (max) P1 ( 0.1) 16 4 12 1.5 1.5 7.5 6.5 2
End
Start Top cover tape 500mm min Empty components pockets saled with cover tape. User direction of feed 500mm min No components Components No components
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VND600
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2002 STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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