FDN327N

October 2001

FDN327N
N-Channel 1.8 Vgs Specified PowerTrench MOSFET
General Description
This 20V N-Channel MOSFET uses Fairchilds high voltage PowerTrench process. It has been optimized for power management applications.

Features
2 A, 20 V. RDS(ON) = 70 m @ VGS = 4.5 V RDS(ON) = 80 m @ VGS = 2.5 V RDS(ON) = 120 m @ VGS = 1.8 V Low gate charge (4.5 nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON)

Applications
Load switch Battery protection Power management

S
G S

SuperSOT -3

TM

G
TA=25 C unless otherwise noted
o

Absolute Maximum Ratings

Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed

Parameter

Ratings
20 8
(Note 1a)

Units
V V A W C

2 8 0.5 0.46 55 to +150

Power Dissipation for Single Operation

(Note 1a) (Note 1b)

Operating and Storage Junction Temperature Range

Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)

250 75

C/W C/W

Package Marking and Ordering Information

Device Marking 327 Device FDN327N Reel Size 7 Tape width 8mm Quantity 3000 units

2001 Fairchild Semiconductor Corporation

FDN327N Rev C (W)

FDN327N

Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSSF IGSSR

TA = 25C unless otherwise noted

Parameter
DrainSource Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current GateBody Leakage, Forward GateBody Leakage, Reverse
(Note 2)

Test Conditions
VGS = 0 V, ID = 250 A

Min
20

Typ

Max Units
V

Off Characteristics
ID = 250 A,Referenced to 25C VDS = 16 V, VGS = 8 V, VGS = 8 V, VGS = 0 V VDS = 0 V VDS = 0 V ID = 250 A 12 1 100 100 mV/C A nA nA

On Characteristics
VGS(th) VGS(th) TJ RDS(on)

Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static DrainSource OnResistance

VDS = VGS,

0.4

0.7 3 40 49 65 55

1.5

V mV/C

ID = 250 A,Referenced to 25C VGS = 4.5 V, ID = 2.0 A VGS = 2.5 V, ID = 1.9 A VGS = 1.8 V, ID = 1.6 A VGS = 4.5V, ID = 2 A, TJ = 125C VGS = 4.5V, VDS = 5 V VDS = 5V, ID = 2 A

70 80 120 103

ID(on) gFS

OnState Drain Current Forward Transconductance

8 11

A S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)

VDS = 10 V, f = 1.0 MHz

V GS = 0 V

423 87 48

pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd TurnOn Delay Time TurnOn Rise Time TurnOff Delay Time TurnOff Fall Time Total Gate Charge GateSource Charge GateDrain Charge

VDD = 10 V, VGS = 4.5 V,

ID = 1 A, RGEN = 6

6 6.5 14 2

12 13 29 4 6.3

ns ns ns ns nC nC nC

VDS = 10 V, VGS = 4.5 V

ID = 2 A,

4.5 0.89 0.95

DrainSource Diode Characteristics and Maximum Ratings

IS VSD Maximum Continuous DrainSource Diode Forward Current DrainSource Diode Forward Voltage VGS = 0 V, IS = 0.42 A
(Note 2)

0.42 0.6 1.2

A V

Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 250C/W when mounted on a 0.02 in2 pad of 2 oz. copper.

b) 270C/W when mounted on a minimum pad.

Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

FDN327N Rev C (W)

FDN327N

Typical Characteristics
16

2 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.0V 2.5V 2.0V 1.8 1.6 2.0V 1.4 2.5V 1.2 1 0.8
0 0.5 1 1.5 2 2.5 3 3.5

VGS = 1.8V

ID, DRAIN CURRENT (A)

12

1.8V
8

3.0V 3.5V 4.5V

0 VDS, DRAIN-SOURCE VOLTAGE (V)

8 ID, DRAIN CURRENT (A)

12

16

Figure 1. On-Region Characteristics.

Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.

0.18 RDS(ON), ON-RESISTANCE (OHM)

1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 2A VGS = 4.5V 1.4

ID = 1A 0.14

1.2

0.1 TA = 125 oC 0.06 TA = 25 C 0.02

o

0.8

0.6 -50 -25 0 25 50 75 100

o

125

150

TJ, JUNCTION TEMPERATURE ( C)

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Temperature.

12

Figure 4. On-Resistance Variation with Gate-to-Source Voltage.

100 IS, REVERSE DRAIN CURRENT (A)

VDS = 5V
I D, DRAIN CURRENT (A) 9

TA =-55 C

25 C 125oC

VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55 C 0.01

o

0.001

0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V)

0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics.

Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.

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Typical Characteristics
5 VGS , GATE-SOURCE VOLTAGE (V)

ID = 2A
4

VDS = 5V 10V

600 500 CAPACITANCE (pF) 15V CISS 400 300 200 COSS 100 CRSS 0

f = 1MHz VGS = 0 V

0 0 2 4 6 Qg, GATE CHARGE (nC)

12

16

20

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics.

P(pk), PEAK TRANSIENT POWER (W) 100 20

Figure 8. Capacitance Characteristics.

ID, DRAIN CURRENT (A)

10

RDS(ON) LIMIT 1ms 10ms

100s

15

SINGLE PULSE RJA = 270C/W TA = 25C

1 VGS = 4.5V SINGLE PULSE RJA = 270 C/W TA = 25 C 0.01 0.1 1

o o

100ms 1s DC

10

0.1

0 10 100 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000

VDS, DRAIN-SOURCE VOLTAGE (V)

Figure 9. Maximum Safe Operating Area.

Figure 10. Single Pulse Maximum Power Dissipation.

r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE

1
D = 0.5 0.2

RJA (t) = r(t) + RJA RJA = 270 C/W

0.1

0.1 0.05 0.02 0.01

P(pk) t1 t2
SINGLE PULSE

0.01

TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2

0.001 0.0001

0.001

0.01

0.1

10

100

1000

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.

FDN327N Rev C (W)

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.

ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series
DISCLAIMER

FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE

OPTOLOGIC OPTOPLANAR PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER

SMART START STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFET

VCX

STAR*POWER is used under license

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LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. H4