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Rev 3: Sept 2004

Rev 3: Sept 2004

AOD405, AOD405L (Green Product) P-Channel Enhancement Mode Field Effect Transistor

 

General Description

 

Features

The AOD405 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. AOD405L (Green Product) is offered in a lead-free package.

V DS (V) = -30V I D = -18A R DS(ON) < 32m(V GS = -10V) R DS(ON) < 60m(V GS = -4.5V)

 

TO-252

D-PAK

D G S
D
G
S
 
Top View Drain Connected to Tab

Top View Drain Connected to Tab

G

D

S

Absolute Maximum Ratings T A =25°C unless otherwise noted

 

Parameter

Symbol

Maximum

Units

Drain-Source Voltage

 

V DS

-30

V

Gate-Source Voltage

 

V GS

±20

V

Continuous Drain

 

T A =25°C G

 

-18

 

Current B,G

T A =100°C G

I

D

-18

A

Pulsed Drain Current

 

I DM

-40

Avalanche Current C

 

I AR

-18

A

Repetitive avalanche energy L=0.1mH C

E AR

40

mJ

 

T C =25°C

P D

60

W

Power Dissipation B

T C =100°C

30

 

T A =25°C

P DSM

2.5

 

Power Dissipation A

T A =70°C

1.6

W

Junction and Storage Temperature Range

T J , T STG

-55 to 175

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient A

t

10s

R

 

16.7

25

°C/W

Maximum Junction-to-Ambient A

Steady-State

θJA

40

50

°C/W

Maximum Junction-to-Case C

Steady-State

R

θJL

1.9

2.5

°C/W

Alpha & Omega Semiconductor, Ltd.

AOD405, AOD405L

Electrical Characteristics (T J =25°C unless otherwise noted)

 

Symbol

Parameter

 

Conditions

Min

Typ

Max

Units

 

STATIC PARAMETERS

 
 

BV DSS

Drain-Source Breakdown Voltage

I

D =-250µA, V GS =0V

-30

   

V

I

 

Zero Gate Voltage Drain Current

 

V DS =-24V, V GS =0V

 

-0.003

-1

 

DSS

 

T

J =55°C

   

-5

µA

I

GSS

Gate-Body leakage current

 

V DS =0V, V GS =±20V

   

±100

nA

 

V

GS(th)

Gate Threshold Voltage

 

V DS =V GS I D =-250µA

-1.2

-2

-2.4

V

I

D(ON)

On state drain current

 

V GS =-10V, V DS =-5V

-40

   

A

       

V GS =-10V, I D =-18A

 

24.5

32

 

R

DS(ON)

Static Drain-Source On-Resistance

 

T

J =125°C

 

36

43

m

   

V GS =-4.5V, I D =-10A

 

41

60

m

g

FS

Forward Transconductance

 

V DS =-5V, I D =-18A

 

17

 

S

 

V

SD

Diode Forward Voltage

I

S =-1A,V GS =0V

 

-0.76

-1

V

I

S

Maximum Body-Diode Continuous Current

     

-18

A

 

DYNAMIC PARAMETERS

 
 

C

iss

Input Capacitance

     

920

1100

pF

 

C

oss

Output Capacitance

 

V GS =0V, V DS =-15V, f=1MHz

 

190

 

pF

 

C

rss

Reverse Transfer Capacitance

   

122

 

pF

 

R

g

Gate resistance

 

V GS =0V, V DS =0V, f=1MHz

   

3.6

4.5

 

SWITCHING PARAMETERS

 
 

Q

g (10V)

Total Gate Charge (10V)

     

18.7

23

nC

 

Q

g (4.5V)

Total Gate Charge (4.5V)

 

V GS =-10V, V DS =-15V, I D =-18A

 

9.7

11.7

nC

 

Q

gs

Gate Source Charge

   

2.54

 

nC

 

Q

gd

Gate Drain Charge

     

5.4

 

nC

t

D(on)

Turn-On DelayTime

     

9

13

ns

t

r

Turn-On Rise Time

 

V GS =-10V, V DS =-15V, R L =0.82, R GEN =3

 

25

35

ns

t

D(off)

Turn-Off DelayTime

   

20

30

ns

t

f

Turn-Off Fall Time

     

12

18

ns

t

rr

Body Diode Reverse Recovery Time

 

I F =-18A, dI/dt=100A/µs

   

21.4

26

ns

 

Q

rr

Body Diode Reverse Recovery Charge

 

I F =-18A, dI/dt=100A/µs

   

13

16

nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175°C may be used if the PCB or heatsink allows it.

B. The power dissipation P D is based on T J(MAX) =175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package

limit.

C: Repetitive rating, pulse width limited by junction temperature T J(MAX) =175°C.

D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.

F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The SOA

curve provides a single pulse rating.

G. The maximum current rating is limited by the package current capability.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AOD405, AOD405L

Normalized On-Resistance

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 -4.5V -10V -6V 25 -5V 20 -4V 15 -3.5V 10 5 V GS =-3V
30
-4.5V
-10V
-6V
25
-5V
20
-4V
15
-3.5V
10
5
V
GS =-3V
0
-I D (A)
30 V DS =-5V 25 20 15 10 5 125°C 25°C 0 -I D (A)
30
V
DS =-5V
25
20
15
10
5
125°C
25°C
0
-I D (A)

012345 0

0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -V GS (Volts) Figure 2:
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-V GS (Volts)
Figure 2: Transfer Characteristics
V GS =-4.5V
I D =-10A
V GS =-10V
I D =-18A
25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
125°C
25°C
0.0
0.2
0.4
0.6
0.8
1.0

-V SD (Volts) Figure 6: Body-Diode Characteristics

-V DS (Volts) Fig 1: On-Region Characteristics

70 65 60 V GS =-4.5V 55 50 45 40 35 30 25 V GS
70
65
60
V
GS =-4.5V
55
50
45
40
35
30
25
V
GS =-10V
20
15
10
0
5
10
15
20
25
)Ω
R DS(ON) (m

-I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage

100 90 I D =-18A 80 70 60 125°C 50 40 30 25°C 20 10
100
90
I
D =-18A
80
70
60
125°C
50
40
30
25°C
20
10
0
3
4
5
6
7
8
9
10
)Ω
R DS(ON) (m
-I S (A)

-V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage

1.60

1.40

1.20

1.00

0.80

0

1.0E+01

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

1.0E-06

Alpha & Omega Semiconductor, Ltd.

AOD405, AOD405L

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.00E+01 V DS =-15V I D =-18A 8.00E+00 6.00E+00 4.00E+00 2.00E+00 0.00E+00 0 4 8
1.00E+01
V
DS =-15V
I
D =-18A
8.00E+00
6.00E+00
4.00E+00
2.00E+00
0.00E+00
0
4
8
12
16
20
-V GS (Volts)

-Q g (nC) Figure 7: Gate-Charge Characteristics

100.0 T J(Max) =150°C, T A =25°C 10µ s R DS(ON) 1ms 10.0 limited 100µs
100.0
T J(Max) =150°C, T A =25°C
10µ
s
R DS(ON)
1ms
10.0
limited
100µs
10ms
0.1s
1.0
1
s
1
0s
DC
0.1
0.1
1
10
100
-I D (Amps)

-V DS (Volts)

Figure 9: Maximum Forward Biased Safe Operating Area (Note F)

1500 1250 C iss 1000 750 500 C C oss rss 250 0 0 5
1500
1250
C
iss
1000
750
500
C
C
oss
rss
250
0
0
5
10
15
20
25
30
Capacitance (pF)

-V DS (Volts) Figure 8: Capacitance Characteristics

40 T J(Max) =150°C T A =25°C 30 20 10 0 0.001 0.01 0.1 1
40
T J(Max) =150°C
T A =25°C
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
Power (W)

Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to- Ambient (Note F)

10 D=T on /T In descending order T D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single
10
D=T on /T
In
descending order
T
D=0.5,
0.3,
0.1,
0.05,
0.02, 0.01, single pulse
J,PK =T A +P DM .Z θJA .R θJA
R
θJA =50°C/W
1
0.1
P
D
T on
Single
Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Z θJA Normalized Transient
Thermal Resistance

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Alpha & Omega Semiconductor, Ltd.

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