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IRL6342PbF
VDS VGS RDS(on) max
(@VGS = 4.5V)
30 12 14.6 11 9.9
V V m nC A
6 6 6 *
Qg (typical) ID
(@TA = 25C)
SO-8
Applications
Note
Max.
30 12 9.9 7.9 79 2.5 1.6 0.02 -55 to + 150
Units
V
e Power Dissipation e
W W/C C
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1
01/03/11
IRL6342PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th) IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
30 0.5 38
Typ.
22 12.0 15.0 -4.2 11 0.01 0.60 4.6 5.79 5.2 2.0 6.0 12 33 14 1025 97 70
Max.
14.6 19.0 1.1 1.0 150 100 -100
Units
Conditions
VGS = 0V, ID = 250A V mV/C Reference to 25C, ID = 1mA VGS = 4.5V, ID = 9.9A m VGS = 2.5V, ID = 7.9A
d d
V mV/C A nA S
VDS = VGS, ID = 10A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 12V VGS = -12V VDS = 10V, ID = 7.9A VGS = 4.5V VDS = 15V ID = 7.9A
nC
ns VDD = 15V, VGS = 4.5V ID = 7.9A RG = 6.8 See Figs. 18 VGS = 0V pF VDS = 25V = 1.0MHz
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
Min.
Typ.
13 5.2
Max.
2.5
Units
A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode.
G S D
Thermal Resistance
RJL RJA Junction-to-Drain Lead f Junction-to-Ambient e
Parameter
Max. 20 50
Units
C/W
Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%. When mounted on 1 ich square copper board. R is measured at T J of approximately 90C.
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IRL6342PbF
100
TOP VGS 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V 1.3V
100
TOP VGS 10V 4.5V 3.5V 2.5V 2.0V 1.8V 1.5V 1.3V
10
BOTTOM
10
BOTTOM
1.3V
VGS = 4.5V
10
T J = 150C
T J = 25C
C rss = C gd
C, Capacitance (pF)
1000
Ciss Coss
VDS= 6.0V
100
Crss
10
15
20
25
30
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IRL6342PbF
100
TJ = 150C T J = 25C
100 1msec 10 DC 1 T A = 25C 0.1 Tj = 150C Single Pulse 0.1 1.0 10 100 10msec
10
VGS = 0V 1.0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-to-Drain Voltage (V)
8
ID, Drain Current (A)
25
50
T J , Temperature ( C )
0.1
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.001 0.01 0.1 1 10 100
0.001 1E-006
1E-005
0.0001
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IRL6342PbF
RDS(on), Drain-to -Source On Resistance (m )
ID = 9.9A 35 30 25 20 15 10 5 1 2 3 4 5 6 7 8 9 10 11 12 T J = 125C
RDS(on), Drain-to -Source On Resistance ( m)
40
Vgs = 4.5V
T J = 25C
200
25000 20000
Power (W)
150
15000 10000
100
50
5000 0 1E-8
1E-7
1E-6
1E-5
1E-4
1E-3
Time (sec)
D.U.T
P.W.
Period
D=
Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
RG
dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
V DD
VDD
+ -
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs
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IRL6342PbF
Vds Vgs Id
L
0
DUT 1K
S
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
V(BR)DSS
15V
tp
DRIVER
VDS
RG
20V
D.U.T
IAS tp
+ V - DD
0.01
I AS
V DS V GS RG 10V V GS
Pulse Width 1 s Duty Factor 0.1
RD
90%
D.U.T.
+
VDS
-V DD
10%
VGS
td(on) tr td(off) tf
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IRL6342PbF
SO-8 Package Outline (Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
' $ %
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(
+ >@
; H
H
;E >@
$ & $ %
127(6 ',0(16,21,1*72/(5$1&,1*3(5$60(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,216$5(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21)250672-('(&287/,1(06$$ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21'2(6127,1&/8'(02/'3527586,216 02/'3527586,21612772(;&(('>@ ',0(16,21,67+(/(1*7+2)/($')2562/'(5,1*72 $68%675$7(
)22735,17 ;>@
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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRL6342PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification information Qualification level Moisture Sensitivity Level RoHS compliant Cons umer (per JE DE C JE S D47F SO-8
guidelines ) MS L1
Qualification standards can be found at International Rectifiers web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/2011
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